KR20190020544A - Light emitting device package and lighting source unit - Google Patents

Abstract

The present invention provides a light emitting element package capable of increasing a color reproduction range and a lighting source device. According to an embodiment of the present invention, the light emitting element package comprises: first and second frames arranged to be separated from each other; a body arranged between the first and second frames; a first light emitting element having first and second electrodes and arranged on the first frame; a second light emitting element having the first and second electrodes and arranged on the body; and an adhesive arranged between the second light emitting element and the body. A wavelength of light having the highest intensity among wavelengths of the light emitted from the first light emitting element and the wavelength of the light having the highest intensity among the wavelengths of the light emitted from the second light emitting device are different from each other, and the second electrode of the first light emitting element is arranged to face the first electrode of the second light emitting element and can include a first intermetallic compound layer which is arranged between the second electrode of the first light emitting element and the first electrode of the second light emitting element.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device package,

An embodiment relates to a package having a semiconductor element and a light source apparatus.

The embodiment relates to a package having a light emitting element and a light source device having the same.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material can be used for a variety of applications such as red, Blue and ultraviolet rays can be realized. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group-VI-VI compound semiconductor material can realize a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a Group III-V or Group-VI-VI compound semiconducting material, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. Further, such a light receiving element has advantages of fast response speed, safety, environmental friendliness and easy control of element materials, and can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

The light emitting device can be provided as a pn junction diode having a characteristic in which electric energy is converted into light energy by using a group III-V element or a group II-VI element in the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. It is used for sterilizing and purifying in the wavelength band, short wavelength, Can be used.

 Ultraviolet rays can be divided into UV-A (315nm-400nm), UV-B (280nm-315nm) and UV-C (200nm-280nm) in the order of long wavelengths. UV-A (315nm-400nm) has been applied in various fields such as UV curing for industrial use, curing of printing ink, exposure machine, discrimination of counterfeit, photocatalytic disinfection and special illumination (aquarium / ) Area is used for medical use, and the UV-C (200nm-280nm) area is applied to air purification, water purification, sterilization products and the like.

On the other hand, a semiconductor device capable of providing a high output has been requested, and a semiconductor device capable of increasing a power by applying a high power source has been studied.

In addition, studies are being made on a method for improving the light extraction efficiency of a semiconductor device and improving the light intensity at a package end in a semiconductor device package. In addition, studies have been made on a method for improving the bonding strength between a package electrode and a semiconductor device in a semiconductor device package.

In addition, studies have been made on a method for reducing the manufacturing cost and improving the manufacturing yield by improving the process efficiency and changing the structure in the semiconductor device package.

The embodiment can provide a light emitting device package and a light source device capable of improving the color reproduction rate.

Embodiments can provide a light emitting device package and a light source device in which light emitting devices emitting different colors are stacked on light emitting devices having different peak wavelengths.

Embodiments can provide a light emitting device package and a light source device in which light emitting devices emitting different colors are connected in series to light emitting devices having different peak wavelengths.

Embodiments can provide a semiconductor device package and a light source device that can prevent a re-melting phenomenon from occurring in a bonding region between electrodes of light emitting devices in a process of re-bonding the light emitting device package to a substrate.

A light emitting device package according to an embodiment includes first and second frames spaced apart from each other; A body disposed between the first and second frames; A first light emitting element having a first electrode and a second electrode and disposed on the first frame; A second light emitting element having first and second electrodes and disposed on the body; And an adhesive disposed between the second light emitting device and the body, wherein the intensity of the light having the highest intensity among the wavelengths of the light emitted from the first light emitting device and the intensity of the light emitted from the second light emitting device is the largest The second electrode of the first light emitting element is disposed to face the first electrode of the second light emitting element, and the second electrode of the first light emitting element and the first electrode of the second light emitting element are arranged to face each other, And a second intermetallic compound layer disposed on the second intermetallic compound layer.

The light emitting device package disclosed in the embodiments includes first and second frames spaced apart from each other; A body coupled to the first and second frames; And a plurality of light emitting elements disposed on the first and second frames, wherein the plurality of light emitting elements includes a first light emitting element for emitting first light, a second light emitting element for emitting second light, Wherein the plurality of light emitting elements emit at least two kinds of colors, wherein at least one of the at least two types of colors includes different peak wavelengths, and the first, second and third light emitting elements emit light of at least two colors, Each of the third light emitting elements includes first and second electrodes, the first light emitting element is disposed on the first frame and electrically connected to the first frame, and the second light emitting element is connected to the first and second light emitting elements, Wherein the first and second light emitting elements are disposed on at least one of the first and second frames and are electrically connected to the second frame, the third light emitting element is disposed on the first and second light emitting elements, And the first electrode of the third light emitting device Wherein the first electrode of the first light emitting device faces the second electrode of the first light emitting device and is connected to the second electrode of the first light emitting device, And may be connected to the first electrode of the light emitting device.

According to an embodiment of the present invention, there is provided a light emitting device comprising a third light emitting device having first and second electrodes and disposed on the second frame, wherein a wavelength of light having the highest intensity among the wavelengths of light emitted from the third light emitting device, The first electrode of the third light emitting device is disposed to face the second electrode of the second light emitting device, and the first electrode of the third light emitting device is arranged to face the second electrode of the second light emitting device, And a second intermetallic compound layer disposed between the first electrode and the second electrode of the second light emitting device.

According to an embodiment of the present invention, the first electrode of the first light emitting device is connected to the first frame by a wire, the second electrode of the third light emitting device is connected to the second frame by a wire, The bottom surface area of the first and second electrodes may be larger than the top surface area of the second electrode of the first light emitting device and the first electrode of the third light emitting device.

According to an embodiment of the present invention, the second electrode of the second light emitting device faces the second frame and may be connected to the second frame.

According to an embodiment of the present invention, the first and third light emitting devices emit different peak wavelengths and main wavelengths of blue, and the second light emitting device emits a green peak wavelength, and the first to third light emitting devices And a molding portion having a red phosphor.

According to an embodiment of the present invention, the first light emitting device emits a blue wavelength light, the second light emitting device emits a green wavelength, and the first and second light emitting devices include a red phosphor.

According to an embodiment of the present invention, the first and second intermetallic compound layers include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and Cu _x Ni _y , x < 1, y = 1-x.

According to an embodiment of the present invention, the upper portion of the package body may be opened and the first and second frames may be exposed and the molding portion may be disposed.

According to an embodiment of the present invention, the adhesive is in contact with the first to third light emitting elements and contacts at least one of the body and the first and second frames, and the body may have a recess in which a part of the adhesive is disposed have.

According to an embodiment of the present invention, the upper surface of the second frame is disposed higher than the upper surface of the first light emitting device, and the body includes an inclined side surface and is in contact with the adhesive. And a light source device.

The embodiment can provide a package for a high voltage by connecting a plurality of light emitting elements in series.

Embodiments can provide a package for high color reproduction and a light source device having a plurality of light emitting elements emitting different peak wavelengths and at least one light emitting element emitting different colors.

The embodiment can improve the light efficiency.

The embodiment directly connects the electrodes of the light emitting elements, and the thermal characteristics can be improved.

Embodiments can improve the use ratio of LED chips by disposing light emitting elements emitting light of different wavelengths in the same color.

By bonding the light emitting device according to the embodiment to the low temperature metal compound layer, a re-melting phenomenon occurs in the bonding region in the light emitting device package in the process of re-bonding the light emitting device package on the circuit board .

1 is a plan view of a light emitting device package according to the first embodiment.
2 is a cross-sectional view of the light emitting device package of FIG. 1 taken along the line AA.
3 is a first modification of the light emitting device package of Fig.
4 is a second modification of the light emitting device package of Fig.
5 is a view showing a detailed example of the light emitting elements of the light emitting device package of FIG.
6 is a cross-sectional view illustrating an example of a third light emitting device in the light emitting device package of FIG.
FIGS. 7A and 7B are views showing examples of an intermetallic compound layer and a paste between electrodes, and FIG. 7C is a diagram showing an area difference of electrodes.
8 is a view showing a first modification of the light emitting device package of FIG.
9 is a view showing a second modification of the light emitting device package of FIG.
10 is a view showing a third modification of the light emitting device package of FIG.
11 is a cross-sectional view of a light emitting device package according to the second embodiment.
12 is a side sectional view of a light source device having a light emitting device package according to an embodiment.
13 is another example of a light source device in which a plurality of light emitting devices according to the third embodiment are disposed.
14 is an example in which a plurality of light emitting units of Fig. 13 are arranged.
15 is an example of a wavelength spectrum emitted from the light emitting device package of Fig.
16 is an example of a wavelength spectrum emitted from the light emitting device package of Fig.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. In addition, the criteria for the top, bottom, or bottom of each layer will be described with reference to drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the semiconductor device package may include a light emitting device that emits light of an ultraviolet ray, an infrared ray, or a visible ray. Hereinafter, a case where a light emitting device is applied as an example of a semiconductor device will be described, and a package or a light source device to which the light emitting device is applied includes a non-light emitting device such as a zener diode or a sensing device for monitoring wavelength or heat .

The light emitting device package according to the first embodiment will be described with reference to FIGS. 1 to 7. FIG. 1 is a cross-sectional view of the light emitting device package of FIG. 1, FIG. 3 is a first modification of the light emitting device package of FIG. 2, and FIG. 4 is a cross- 5 shows a detailed configuration of the light emitting devices of the light emitting device package of FIG. 2, and FIG. 6 illustrates an example of the third light emitting device of the light emitting device package of FIG. 5 FIGS. 7A and 7B are views showing examples of an intermetallic compound layer and a paste between electrodes, and FIG. 7C is a view showing an area difference of electrodes. FIG.

The light emitting device package 100 according to the embodiment may include a package package body 110 and a plurality of light emitting devices 151, 152 and 153, as shown in FIGS.

The package body 110 may be coupled to the first frame 121 and the second frame 131. The package body 110 may be a supporting member for supporting the first and second frames 121 and 131, for example, a supporting substrate. In the package body 110, the first frame 121 and the second frame 131 may be spaced apart from each other. A body 113 may be disposed between the first and second frames 121 and 131. The body 113 may be made of the same material as that of the package body 110 or a different material. When the body 113 and the package body 110 are made of different materials, an interface may be formed between the two bodies.

The package body 110 and the body 113 may be made of a resin material or an insulating material. The package body 110 may be formed of, for example, polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, And may be formed of at least one selected from the group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the package body 110 and the body 113 may include a high refractive index filler such as TiO ₂ and SiO ₂ as an epoxy material. The package body 110 and the body 113 may be made of a reflective resin. As another example, the package body 110 and the body 113 may be transparent or non-transparent.

The first frame 121 and the second frame 131 may be separated from each other by a body 113. When the first frame 121 and the second frame 131 are made of a conductive material or an electrode, the separating unit 113 may be formed of an insulating material as an electrode separating member. The separator 113 is disposed between the first frame 121 and the second frame 131 and may be formed of the same material as the package body 110 or may be made of a different material from the package body 110 . The separator 113 may be made of a transparent or non-transparent material. The package body 110 may include the body 113, the first and second frames 121 and 131.

The package body 110 may include a cavity 112. The upper portion of the package body 110 may be opened in the cavity 112, and the first frame 121 and the second frame 131 may be exposed. The first frame 121 and the second frame 131 may be exposed to the bottom of the cavity 112. The body 113 may be exposed at the bottom of the cavity 112. The sides 116 of the cavity 112 may be inclined or perpendicular to the bottom horizontal straight line of the package, or may have a plane perpendicular to the inclined plane. The top view shape of the cavity 112 may include a circular shape, an elliptical shape, or a polygonal shape. The cavity 112 may have a smaller or smaller footprint or width than the top area or width.

The first frame 121 and the second frame 131 may be made of a conductive material, for example, a metal material. The first frame 121 and the second frame 131 may be formed of a metal such as platinum (Pt), titanium (Ti), nickel (Ni), copper (Cu), gold (Au), tantalum (Al), and silver (Ag), and may be a single layer or a multi-layer having different metal layers.

The first frame 121 may include a first extension portion 123 extending to the first side of the package body 110 through the package body 110. The first extension portion 123 may include a first extension portion 123, May be projected in a single or a plurality of projections. The opposite side of the first side of the package body 110 may be the second side. The first frame 121 has at least one hole 125 in a region vertically overlapping the package body 110 and a part of the package body 110 is coupled through the hole 125. [ .

The second frame 131 may include a second extension 133 extending to the second side of the package body 110 through the package body 110. The second extension 133 may include a second extension 133, May be projected in a single or a plurality of projections. The second frame 131 has at least one hole 135 in a region vertically overlapping the package body 110 and a part of the package body 110 is coupled through the hole 135 .

The thickness T2 of the first frame 121 and the second frame 131 may be 220 占 퐉 or less and may be in a range of 180 占 퐉 to 220 占 퐉, for example. For example, the holes 125 and 135 of the first and second frames 121 and 131 may be formed in a stepped region having a larger area or width than the upper region. The thickness (T2) of the stepped region may be provided in the range of 100 mu m or less, for example, 20 mu m to 100 mu m. Here, the thickness difference (T2-T1) in the step difference region can be selected to be at least 100 mu m or more. This takes into consideration the thickness of the injection process that can provide crack free of the package body 110.

The light emitting devices 151, 152, and 153 may be formed of a compound semiconductor of Group II and VI elements, or / and a compound semiconductor of Group III and V elements. For example, the light emitting device can selectively include a semiconductor device manufactured using a compound semiconductor of a series such as AlInGaN, InGaN, AlGaN, GaN, GaAs, InGaP, AllnGaP, InP and InGaAs. The plurality of light emitting devices 151, 152, and 153 may emit different colors. The plurality of light emitting devices 151, 152, and 153 may emit different peak wavelengths and / or different dominant wavelengths within the same color. The plurality of light emitting devices 151, 152, and 153 may include two or more light emitting devices emitting different peak wavelengths and different dominant wavelengths within the same first color, and at least one light emitting device emitting light of a second color different from the first color Device. Accordingly, the light emitting device package 100 emits colors having different principal wavelengths from different wavelengths and different peak wavelengths, thereby improving the high color gamut. The peak wavelength is a wavelength at which the intensity of light emitted from each light emitting element is the strongest. The plurality of light emitting devices 151, 152, and 153 may have wavelengths having the strongest intensity among the wavelengths of light.

The plurality of light emitting devices 151, 152, and 153 may be stacked in a multi-layer structure. The plurality of light emitting devices 151, 152, and 153 may be stacked in two or more layers, thereby improving the chip density of the LED. Here, the multilayered light emitting devices 151, 152, and 153 are disposed on the bottom of the cavity 112, and two-layered devices are disposed on the one-layered device, and the first- At least some of which may overlap. The regions superimposed in the vertical direction may be regions facing each other.

The plurality of light emitting devices 151, 152, and 153 may be arranged in a first direction X as shown in FIG. At least one or two of the plurality of light emitting devices 151, 152, and 153 may be arranged in the first direction X. At least one or two of the plurality of light emitting devices 151, 152, and 153 may be disposed on the first or second frame 121 or 131. As another example, all of the light emitting devices 151, 152, and 153 may be disposed on any one of the first and second frames 121 and 131. The plurality of light emitting devices 151, 152, and 153 may be disposed on the first and second frames 121 and 131 at the bottom of the cavity 112.

Each of the plurality of light emitting devices 151, 152 and 153 may include first electrodes P1, P3 and P5 and second electrodes P2, P4 and P6. The first electrodes P1, P3 and P5 may be connected to the p-type semiconductor layers of the light emitting devices 151, 152 and 153 and the second electrodes P2, P4 and P6 may be connected to the n- have.

The plurality of light emitting devices 151, 152 and 153 may include a first light emitting device 151 disposed on the first frame 121, a second light emitting device 152 disposed on the second frame 131, 151 and a third light emitting device 153 disposed on the second light emitting device 152. The first and second light emitting devices 151 and 152 may emit the same color. The third light emitting device 153 may emit light of a color different from that of the first and second light emitting devices 151 and 152.

2 and 5, the first light emitting device 151 emits a first light W1, the second light emitting device 152 emits a second light W2, The element 153 can emit the third light W3. The third light W3 may have a longer wavelength than the second light W2 and the second light W2 may have a longer wavelength than the first light W1. The first light W1 and the second light W2 may have a blue wavelength and the third light W3 may have a green wavelength, for example. The difference between the peak wavelengths of the first light W1 and the second light W2 may have a difference of 5 nm or more, for example, 10 nm or more. As shown in FIG. 15, the first light W1 may have a blue wavelength of less than 450 nm, and the second light W2 may have a blue wavelength of 450 nm or more. The greater the difference between the wavelengths of the first light W1 and the second light W2, the greater the half-value width of the blue wavelength, and the greater the half-value width, the better the color reproduction rate of the blue wavelength. By using a chip that emits different peak wavelengths and different dominant wavelengths in the same color in the first and second light emitting devices 151 and 152, the chip usage ratio can be increased and various blue wavelengths can be applied. If the first and second light emitting devices 151 and 152 use a chip having a wavelength difference of 2 nm or less, chips having a wavelength difference of 3 nm or more can not be used, but the present embodiment can solve the above problem. As shown in FIGS. 5 and 15, the third light W3 may be green, for example, a wavelength in the range of 500 nm to 600 nm.

The third light emitting device 153 may be connected to the first light emitting device 151 in series and the second light emitting device 152 may be connected to the third light emitting device 153 in series. The voltage applied to the first, third, and second light emitting devices 151, 153, and 152 may range, for example, from 8.3V to 9.6V. Alternatively, the voltage supplied to the light emitting device package, that is, the driving voltage may be 8V or more, for example, 8.3V to 9.6V. The driving voltage of the package may vary depending on the number of light emitting devices, and may be, for example, a driving voltage x n (n≥2 or more) of the light emitting devices 151, 152, and 153.

The first electrode P 1 and the second electrode P 2 of the first light emitting device 151 are disposed or exposed at the top and the first electrode P 3 and the second electrode P 2 of the second light emitting device 152 The first electrode P5 and the second electrode P6 of the third light emitting device 153 may be disposed below or exposed to the outside.

As shown in FIG. 2, the first light emitting device 151 may be bonded to the first frame 121 with an adhesive 129. The first electrode P1 of the first light emitting device 151 is connected to the first frame 121 by a wire 141 and the second electrode P2 is connected to the first electrode of the third light emitting device 153 (P1). The second electrode P2 of the first light emitting device 151 faces the first electrode P5 of the third light emitting device 153 and the first electrode P5 of the third light emitting device 153 faces the first electrode P5 of the third light emitting device 153, In the vertical direction.

The second light emitting device 152 may be bonded to at least one of the first and second frames 121 and 131, for example, the second frame 131 with an adhesive 139. The second electrode P3 of the second light emitting device 152 is connected to the second frame 131 by a wire 142. The first electrode P3 is connected to the second electrode of the third light emitting device 153, (P6) and are electrically connected to each other. The first electrode P3 of the second light emitting device 152 faces the second electrode P6 of the third light emitting device 153 and the second electrode P6 of the third light emitting device 153 faces the second electrode P6 of the third light emitting device 153. [ In the vertical direction. The third light emitting device 153 may be overlapped with the body 113 in the vertical direction. The third light emitting device 153 may be overlapped with the body 113 in a range of 80% or less, for example, 20% to 80%, and if the overlapping region is out of the range, It may be difficult, and when it is smaller than the above range, optical interference may become large.

The first electrode P5 of the third light emitting device 153 is connected in series to the second electrode P2 of the first light emitting device 151 and the second electrode P6 is connected to the second light emitting device 151, May be connected in series with the first electrode (P3) of the first electrode (152). The third light emitting device 153 may connect the first light emitting device 151 and the second light emitting device 152 in series. The third light emitting device 153 may be a flip chip, and the first and second light emitting devices 151 and 152 may be horizontal chips.

The bottom area of the first electrode P5 of the third light emitting device 153 may be larger than the top surface area of the second electrode P2 of the first light emitting device 151 and may be 1.5 times or more, for example. The second electrode P6 of the third light emitting device 153 may be at least 1.5 times the area of the top surface of the first electrode P3 of the second light emitting device 152. [ When the third light emitting device 153 is aligned on the first light emitting device 151 and the second light emitting device 152 in a flip chip manner and then bonded to the first and second light emitting devices 151 and 152, The alignment error can be reduced by the first and second electrodes P5 and P6.

5, the second electrode P2 of the first light emitting device 151 and the first electrode P5 of the third light emitting device 153 are bonded to each other. The second electrode P2 of the first light emitting device 151 and the first electrode P5 of the third light emitting device 153 may be bonded to the first intermetallic compound layer P10. The first intermetallic compound (IMC) P10 may include at least one of Ag and Au. Examples of the first intermetallic compound layer include Ag solder, Ag-Sn, Au paste, Au-Sn, Au nanoshell nanoshell-based materials. The first intermetallic compound layer (P10) may include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and Cu _x Ni _y . 1, y = 1-x. The second electrode P2 of the first light emitting device 151 and the first electrode P5 of the third light emitting device 153 are eutectic bonded to form a first intermetallic compound layer P10, . The first intermetallic compound layer P10 may be sintered at a relatively low temperature in comparison with the temperature at which the light emitting device package is mounted, and may include at least one of Au, Ag, and Cu. have.

The first electrode P3 of the second light emitting device 152 and the second electrode P6 of the third light emitting device 153 are bonded to each other. The second electrode P3 of the second light emitting device 152 and the second electrode P6 of the third light emitting device 153 may be bonded to the second intermetallic compound layer P11. The second intermetallic compound layer (P11) may be the same material as the first intermetallic compound layer (P10).

The molding part 181 may be disposed in the cavity 112. The molding part 181 may include a transparent resin material. The molding part 181 may include a material such as transparent silicone or epoxy. The molding part 181 may cover the first to third light emitting devices 151, 152, and 153. The molding part 181 may transmit the light emitted from the first to third light emitting devices 151, 152, and 153. The molding material 181 may be a single layer or a multi-layer material. If the material is multi-layered, a resin material having a low refractive index may be disposed in the direction of the top surface of the molding part 181.

The molding part 181 may include a fluorescent material therein. The phosphor may include a red phosphor, and the red phosphor may include a sulfide-based, oxysulfide-based, nitride-based, fluoride-based phosphor. The red fluorescent substance is, for ^{_{example, Ba 3 SiO 5: Eu 2}} +, Ba 2 LiB 5 O 10: Eu 2+, Ba 2 Mg (BO 3) 2: includes at least one of Eu ^{2 +,} or a fluoride (fluoride) compound For example, at least one of an MGF-based fluorescent material, a KSF-based fluorescent material, and a KTF-based fluorescent material.

The upper surface of the molding part 181 may include at least one of a horizontal plane, a concave curved surface, or a convex curved surface. An optical lens (not shown) may be disposed on the molding part 181, and the optical lens may adjust the directivity of the light emitted through the molding part 181.

In an embodiment, a third light emitting device 153 having a longer wavelength than the blue wavelength is stacked on a blue light emitting device having two or more different peak wavelengths and different main wavelengths emitted from the light emitting device package 100, The color reproduction ratio can be improved and the utility of the blue LED chip can be enhanced. In addition, the amount of light can be changed by the two or more blue light emitting devices, and the problem of increased energy loss of the blue wavelength can be reduced. Further, the third light emitting device 153, for example, a green light emitting device may have the same size as the first light emitting device 151 or the second light emitting device 152, or may have a size about 2 to 4 times larger. Thereby reducing degradation of the green light emitted through the package.

In addition, since the first light emitting device 151, the third light emitting device 153, and the second light emitting device 152 are connected in series, the consumption efficiency can be improved and the driver can be easily controlled.

FIG. 3 is a first modification of the light emitting device package of FIG. 2, in which the light emitting device package includes an adhesive 118 disposed between the light emitting devices. The adhesive 118 may be in contact with at least one or more than one of the first to third light emitting devices 151, 152, and 153. The adhesive 118 may include at least one of a resin material, a hybrid material including an epoxy-based material, a silicone-based material, an epoxy-based material, and a silicon-based material . The adhesive 118 may be an adhesive 118 that reflects light emitted from the light emitting devices 151, 152 and 153 and may include a resin containing a high refractive index filler such as Al ₂ O ₃ , SiO ₂ , TiO ₂ , Or may include white silicone.

The adhesive 118 may be disposed between the third light emitting device 153 and the body 113. The adhesive 118 may be disposed between the third light emitting device 153 and the first and second frames 121 and 131. The adhesive 118 is in contact with at least one of the third light emitting device 153 and the first and second frames 121 and 131 so that the heat generated from the third light emitting device 153 is transmitted to the first and second frames 121 and 131. [ (121, 131). The heat conduction characteristic of the adhesive 118 is higher than that of the molding part 181 so that the heat generated from the third light emitting device 153 is conducted through the first and second frames 121 and 131, The thermal stability of the third light emitting device 153 can be provided.

The adhesive 118 may be disposed between the first light emitting device 151 and the second light emitting device 152. The thickness of the adhesive 118 may be greater than the thickness of the first light emitting device 151 and the second light emitting device 152. The adhesive 118 is electrically connected to the second electrode P2 of the first light emitting device 151, the first electrode P3 of the second light emitting device 152 and the first and second electrodes of the third light emitting device 153, (P5, P6). The adhesive 118 may affect the bonding portion of the electrodes P2, P5, P3 and P6 or may be formed on the upper surfaces of the first and second light emitting devices 151 and 152 through the electrodes P2, P5, P3 and P6 And may be formed to be in non-contact with the electrodes P2, P5, P3, and P6.

The adhesive 118 may be in contact with the molding part 181. The width of the top surface of the adhesive 118 may be the same as the distance between the first and second light emitting devices 151 and 152 and the length of the third light emitting device 153 in the second direction The length in the second direction of the first direction. The adhesive 118 is in contact with the lower surface of the third light emitting device 153 to conduct heat and reflect the light so that the heat dissipation characteristics of the third light emitting device 153 are improved and the first and second light emitting devices 151, So that light interference can be reduced.

Fig. 4 is a second modification of the light emitting device package of Fig. 2, and the same parts as those of Figs. 2 and 3 will be described with reference to Fig. 2 and Fig.

Referring to FIG. 4, an adhesive 118 is disposed between the light emitting devices 151, 152, and 153. The adhesive 118 will be described with reference to FIG. The adhesive 118 may be disposed and contacted between the body 113 and the third light emitting device 153.

A recess 114 may be formed in the body 113 and a depth of the recess 114 may be equal to or less than a half of a thickness of the body 113. A portion of the adhesive 118 may be filled in the recess 114. Since the contact area of the adhesive 118 with the body 113 is increased, it is possible to reduce the influence of the adhesive 118 on the first and second light emitting devices 151 and 152 due to thermal expansion supported by the body 113.

As shown in FIG. 5, each of the first to third light emitting devices 151, 152, and 153 includes a substrate 305 and a light emitting structure 310 on the substrate 305. The light emitting structure 310 of each of the light emitting devices 151, 152, and 153 includes an n-type semiconductor layer and a p-type semiconductor layer, and active layers A1, A2, and A3 disposed between the n-type semiconductor layer and the p-type semiconductor layer. The active layer A1 of the first light emitting device 151 emits the first light W1 and the active layer A2 of the second light emitting device 152 emits the second light W2, The active layer A3 of the element 153 can emit the third light W3. The first light W1 may have a shorter wavelength than the second light W2 and the second light W2 may have a shorter wavelength than the third light W3. The first and second lights W1 and W2 have different peak wavelengths and different dominant wavelengths in the same color and the third light W3 has wavelengths different from those of the first and second lights W1 and W2 to be. The first and second lights W1 and W2 are blue light and the third light W3 is green light. Although the third light emitting device 153 is provided in a chip structure similar to that of the twelfth light emitting devices 151 and 152, the third light emitting device 153 may be provided in a different chip structure, but the present invention is not limited thereto.

As another example, the first and second light emitting devices 151 and 152 emit green light of different peaks, and the third light emitting device 153 emits blue light. As another example, the first light emitting device 151 emits blue light, and the second and third light emitting devices emit green light. As another example, the first and third light emitting devices 151 and 153 emit blue light, and the second light emitting device 152 emits green light. At least one of the three or more light emitting devices emits green light and at least one of the three or more light emitting devices emits blue light and the other one of the three or more light emitting devices emits blue light or blue light having a different peak wavelength and main wavelength . By adjusting the amount of light of the green and blue light, the color reproduction rate can be increased.

6 illustrates an example of a light emitting device according to an embodiment, and an example of the third light emitting device 153 will be described.

Referring to FIG. 6, the light emitting device 153 includes a light emitting structure 310 and a first electrode P5 and a second electrode P6 on the light emitting structure 310. Referring to FIG.

The light emitting structure 310 may be formed of a Group 2-VI compound semiconductor or a Group 3B-5 compound semiconductor, and includes a multi-layer structure. The light emitting structure 310 may include a first conductive semiconductor layer 311, an active layer 312, and a second conductive semiconductor layer 313. The active layer 312 may be disposed between the first conductive semiconductor layer 311 and the second conductive semiconductor layer 313. The first conductive semiconductor layer 311 may be provided as an n-type semiconductor layer, and the second conductive semiconductor layer 313 may be provided as a p-type semiconductor layer. Of course, according to another example, the first conductivity type semiconductor layer 311 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 313 may be provided as an n-type semiconductor layer. The light emitting structure 310 may be provided with at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) .

The light emitting structure 310 may be disposed on the substrate 305. A single or multi-layered semiconductor layer having a Group 2-VI compound semiconductor or a Group 3B-5 compound semiconductor may be disposed between the light emitting structure 310 and the substrate 305, but the present invention is not limited thereto. The substrate 305 may be selectively formed of an insulating, conductive, or permeable material. The substrate 305 may be selected from the group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. For example, the substrate 305 may have a concavo-convex pattern on at least one of its upper and lower surfaces, thereby improving light extraction efficiency.

The current diffusion layer 320 and the conductive layer 330 may be disposed on the light emitting structure 310. The current diffusion layer 320 and the conductive layer 330 may increase current diffusion to increase light output. The current diffusion layer 320 may be provided as an oxide or a nitride. The current diffusion layer 320 may be overlapped with the first electrode portion 342 in a vertical direction and may be in contact with the second conductive type semiconductor layer 313. The current diffusion layer 320 can improve the luminous flux by preventing the current concentration below the first electrode part 342 and improving the electrical reliability.

The conductive layer 330 may include at least one selected from the group consisting of metals, metal oxides, and metal nitrides. The conductive layer 330 may include a light-transmitting material. For example, the conductive layer 330 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO) ITO, Ni / IrOx / Au, Ni / IrOx / ITO, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / Au / ITO, Pt, Ni, Au, Rh, and Pd, and may be a single layer or a multi-layer. The conductive layer 330 may include a reflective material, for example, a metal such as Au, Al, and Ag.

The passivation layer 350 may protect the exposed surface of the light emitting structure 310 on the light emitting structure 310. The passivation layer 350 may be disposed on the first electrode portion 342. The passivation layer 350 may include an opening exposing an upper region of the first electrode portion 342. The passivation layer 350 may be disposed on the second electrode portion 341 of the second electrode P6. The passivation layer 350 may include an opening exposing an upper region of the second electrode portion 341. For example, the protective layer 350 may be provided as an insulating material. For example, the protective layer 350 is _{SiO 2, Si 3 N 4,} Al 2 O 3 And at least one material selected from the group consisting of:

The first electrode P5 may include at least one of a first electrode portion 342, a first reflective layer 362, and a first pad 372. The first electrode unit 342 is connected to the conductive layer 330 and may be connected to the first pad 372. The first reflective layer 362 may be made of an insulating material and may be disposed around the first electrode portion 342 to reduce light loss.

The second electrode P6 may include at least one of a second electrode unit 341, a second reflective layer 361, and a second pad 371. The second electrode portion 341 is connected to the first conductive semiconductor layer 311 and may be connected to the second pad 371. The second reflective layer 361 may be formed of an insulating material and may be disposed around the second electrode unit 341 to reduce light loss. For example, the first electrode portion 342 and the second electrode portion 341 may be formed of a metal such as ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / , At least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf or an alloy of two or more of them. For example, the first reflective layer 362 and the second reflective layer 361 may be formed of a reflective material of a resin material, or a DBR (Distributed Bragg Reflector) layer or an ODR (Omni Directional Reflector) layer in which layers having different refractive indices are stacked . &Lt; / RTI &gt; The first pad 372 and the second pad 371 may be formed of a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Layer or multi-layer using at least one material or alloy selected from among Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / .

7A, the first electrode P5 of the third light emitting device 153 and the second electrode P2 of the first light emitting device 151 are connected to the first intermetallic compound layer P10 Respectively. The second electrode P6 of the third light emitting device 153 and the first electrode P3 of the second light emitting device 152 may be bonded together by the second intermetallic compound layer P11. The first and second intermetallic compound layers P10 and P11 may include at least one of Au, Cu, and Ag. The first and second intermetallic compound layers P10 and P11 may include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and Cu _x Ni _y , 0 < x < 1, and y = 1-x. The first and second intermetallic compound layers P10 and P11 may be larger than the area and width of the lower electrodes P2 and P3. The second layer P22 may be disposed at a lower portion of the first layer P21, and the second layer P22 may be formed of a metal such as Cu , Cr, Ni, and the like.

FIG. 7 (b) may include a conductive epoxy solder paste (P20), which is not an intermetallic compound layer, and may include, for example, an Ag epoxy solder paste. The first electrode P5 of the third light emitting device 153 is bonded to the second electrode P2 of the first light emitting device 151 using the epoxy solder paste P20, The second electrode P6 of the third light emitting device 153 and the first electrode P3 of the third light emitting device 151 may be bonded.

As described above, the electrodes P2-P5 and P3-P6 of the two light emitting devices 151-153 and 152-153 arranged in the mutually perpendicular directions are bonded by low-temperature bonding, for example, an intermetallic compound layer or an epoxy solder paste, . Accordingly, in the process of re-bonding the light emitting device package on the circuit board, the re-melting phenomenon in the bonding area in the light emitting device package can be prevented.

Referring to FIG. 7C, the first and second electrodes P5 and P6 of the third light emitting device 153 are connected to the lower electrodes P2 and P3 to which the first light emitting device 151 is connected, May be larger than the area of the second electrode (P2) and the first electrode (P3) of the second light emitting device (152), for example, 1.5 times or more. Since the area or width of the first and second electrodes P5 and P6 of the third light emitting device 153 is large, the third light emitting device 153 disposed on the first and second light emitting devices 151 and 152 Alignment errors can be reduced. The area of the first and second electrodes P5 and P6 of the third light emitting device 153 may be the same as the area of the first light emitting device 153. In this case, The area of the second electrode P2 of the first light emitting device 151 corresponds to the top surface area and the area of the first electrode P3 of the second light emitting device 152 corresponds to the top surface area. The first electrode P1 of the first light emitting device 151 or the second electrode P4 of the second light emitting device 152 may be an align mark for mounting the third light emitting device 153, .

FIG. 8 is a first modification of the light emitting device package of FIG. 1, in which the first and second light emitting devices 151 and 152 are arranged in a first direction X and at least a part of the first and second light emitting devices 151 and 152 are overlapped in a second direction Y . The first light emitting device 151 may be disposed on the first frame 121 or on the first frame 121 and the body 113. The second light emitting device 152 may be disposed on the second frame 131 or on the second frame 131 and the body 113. The first and second light emitting devices 151 and 152 may be spaced apart from each other by a distance smaller than the length of the third light emitting device 153 in the second direction. The second direction may be a direction orthogonal to the first direction.

The third light emitting device 153 may be disposed in the second direction and may be disposed on the first light emitting device 151 and the second light emitting device 152. The body 113 disposed between the first frame 121 and the second frame 131 may be arranged in the second direction and may be overlapped with the third light emitting device 153 in the vertical direction. The sizes of the first to third light emitting devices 151, 152 and 153 may be equal to each other or the third light emitting device 153 may be larger than other devices.

The first and second light emitting devices 151 and 152 are spaced apart from each other and disposed to face each other in the second direction. Thus, the first frame 121 and the second frame 131 can provide a wire bonding region. A wire connected to the first light emitting device 151 may extend in a second direction and may be bonded to the first frame 121 and the second light emitting device 152 May extend in the second direction and may be bonded to the second frame 131. [

The third light emitting device 153 may be connected to the first and second light emitting devices 151 and 152 by the bonding method described above, and a detailed description thereof will be made with reference to FIGS. 5 through 7. FIG. The first and second light emitting devices 151 and 152 emit blue light and the third light emitting device 153 emits green light. The cavity 112 may be provided with a molding part 181 having a red phosphor, but the present invention is not limited thereto.

9 is a second modification of the light emitting device package of Fig.

Referring to FIG. 9, a plurality of light emitting devices may be disposed on the first and second frames 121 and 131.

The plurality of light emitting devices include first and second light emitting devices 151 and 152 facing each other in a first direction and first and second light emitting devices 151 and 152 spaced apart from the first and second light emitting devices 151 and 152, A fourth light emitting device 156 and a second light emitting device 152 and a third light emitting device 156 on the first and third light emitting devices 151 and 155, And a fifth light emitting element 157 on the second light emitting element. The first to third light emitting devices 151, 152, and 155 may emit blue light, and the fourth and fifth light emitting devices 156 and 157 may emit green light. As another example, the first to third light emitting devices 151, 152, and 155 may emit green light and the fourth and fifth light emitting devices 156 and 157 may emit blue light.

The first and fourth light emitting devices 151 and 156 are disposed on the first frame 121. The second and fifth light emitting devices 152 and 157 are disposed on the second frame 131. The third light emitting device 155, May be disposed on the first and second frames 121 and 131. [ The third light emitting device 155 may be disposed on the body 113. Each of the electrodes of the second and fourth light emitting devices 156 and 157 may have a bonding structure with other devices as described above, and a detailed description thereof will be omitted. The light emitting devices may be connected in series.

10 is a third modification of the light emitting device package of FIG.

Referring to FIG. 10, a body 113 disposed at the bottom of the cavity 112 is disposed between the first frame 121 and the second frame 131. The body 113 may be disposed adjacent to the bottom edge of the bottom of the cavity 112, not the center. The area of the first frame 121 may be larger than the area of the second frame 131 at the bottom of the cavity 112 and may be 1.5 times larger than the area of the second frame 131, for example.

The first light emitting device 151 is disposed on the first frame 121 and the second light emitting device 152 is disposed on the first and second frames 121 and 131. The third light emitting device 153 is disposed on the first and second frames 121 and 131, May be disposed on the second light emitting device 151, 152. The third light emitting device 153 may not overlap the body 113 in the vertical direction. The second light emitting device 152 may be disposed to overlap with the first and second frames 121 and 131 and the body 113 in the vertical direction. The second light emitting device 152 may be disposed on the first frame 121 and may be connected to the second frame 131 through a wire 142.

11 is a side sectional view showing a light emitting device package according to the second embodiment. In the description of Fig. 11, the same portions as those of the first embodiment will be described with reference to the description of the first embodiment.

Referring to FIG. 11, the first frame 121 and the second frame 131 disposed at the bottom of the cavity 112 may be arranged in different horizontal planes. In the cavity 112, the second frame 131 may be disposed higher than the first frame 121. The second frame 131 may be bent in the package body 110 and extend to the bottom of the cavity 112. The body 113 may provide a sloped surface due to the height difference between the second frame 131 and the first frame 121 and a part of the body 113 may be provided on the lower portion of the second frame 131 Lt; / RTI &gt;

The first light emitting device 151A may be disposed on the first frame 121 and the second light emitting device 153A may be disposed on the first and second frames 131A and 131B. The second light emitting device 153A may overlap the first light emitting device 151A, the second frame 131, and the body 113 in the vertical direction. The first light emitting device 151A emits blue light W4 as shown in Fig. 16, and the second light emitting device 153A emits green light W5 as shown in Fig. As another example, the first light emitting device 151A may emit green light, and the second light emitting device 153A may emit blue light. As another example, the first and second light emitting devices 151A and 153A may emit blue or green light having different peak wavelengths and different dominant wavelengths.

The molding portion 181 in the cavity 112 may include a phosphor such as a red phosphor that covers the plurality of light emitting devices 151A and 153A and emits light of colors other than blue and green. The color reproduction ratio can be improved by these multicolor lights.

An adhesive 118 may be disposed between the second light emitting device 153A and the bottom of the cavity 112. The adhesive 118 may be disposed between the body 113 and the second light emitting device 153A. The adhesive 118 may be in contact with the side surface of the first light emitting device 151A and the inclined body 113. [

The first electrode P5 of the second light emitting device 152 is bonded to the second electrode P2 of the first light emitting device 151 and the second electrode P6 of the second light emitting device 152 is bonded to the first electrode P5 of the second light emitting device 152, May be bonded with the second frame 131 and the intermetallic compound layer P30 or solder paste. Accordingly, in the process of re-bonding the light emitting device package on the circuit board, the re-melting phenomenon in the bonding area in the light emitting device package can be prevented.

FIG. 12 is a light source device in which the light emitting device package of FIG. 2 is disposed on a circuit board.

Referring to FIG. 12, a light emitting device package 100 is disposed on a circuit board 201. The circuit board 201 may be arranged in a light unit such as a display device, a terminal, a vehicle lamp, and a lighting device. The circuit board 201 may include a circuit layer electrically connected to the light emitting device package 100. The circuit board 201 may include at least one of a resin-made PCB, a metal core PCB (MCPCB), a non-flexible PCB, and a flexible PCB (FPCB) Do not.

The third and fourth electrode pads 211 and 213 are disposed on the circuit board 201 and the third electrode pad 211 is electrically connected to the first frame 121 of the light emitting device package 100 and the conductive adhesive 221, And the fourth electrode pad 223 may be adhered to the second frame 131 of the light emitting device package 100 with a conductive adhesive agent 223. The conductive adhesive 221, 223 may include, for example, a solder paste.

13 is an example of a light unit having a plurality of light emitting elements according to the embodiment.

Referring to FIG. 13, a plurality of light emitting devices 151, 152, and 153 are disposed on a circuit board 201. The plurality of light emitting devices 151, 152 and 153 includes a first light emitting device 151 and a second light emitting device 152 and a third light emitting device 153 on the first and second light emitting devices 151 and 152. The first to third light emitting devices 151, 152 and 153 include first electrodes P1, P3 and P5 and second electrodes P2, P4 and P6. Referring to the description of the first embodiment and the bonding structure of the first and third light emitting devices 151, 152 and 153 and the first and second electrodes P5 and P6 of the third light emitting device 153 , And a detailed description thereof will be omitted.

The first and second light emitting devices 151 and 152 emit blue light having different peak wavelengths and different dominant wavelengths, and the third light emitting device 153 emits green light. The first and second light emitting devices 151 and 152 emit green light having different peak wavelengths and different dominant wavelengths, and the third light emitting device 153 emits blue light.

The first light emitting device 151 may be bonded to the upper surface of the circuit board 201 with an adhesive 218. The adhesive 218 may include a conductive or insulating adhesive and may be connected to the third electrode pad 211 of the circuit board 201 by a wire 241. The third electrode pad 211 may be further disposed under the first light emitting device 151, thereby improving the heat dissipation characteristics.

The second light emitting device 152 may be bonded to the upper surface of the circuit board 201 with an adhesive 219. The adhesive 219 may include a conductive or insulating adhesive and may be connected to the fourth electrode pad 213 of the circuit board 201 by a wire 243. [ The fourth electrode pad 213 may be further disposed below the second light emitting device 152 to improve the heat radiation characteristic.

A red phosphor layer may be further disposed on at least one of the first and second light emitting devices 151 and 152 or the third light emitting device 153, but the present invention is not limited thereto. As another example, a molding part for covering the first to third light emitting devices 153 may be provided, and a red phosphor may be added to the molding part. Accordingly, it is possible to provide a light-emitting portion with high color reproducibility having blue, green, and red colors, and to control the driving.

An adhesive (not shown) may be disposed between the third light emitting device 153 and the upper surface of the circuit board 201. As the adhesive, a filler such as TiO ₂ having a high refractive index may be added to the resin material, but the present invention is not limited thereto. The construction of such an adhesive will be described with reference to FIGS. 3 and 4. FIG. At least one of the plurality of light emitting devices 151, 152 and 153 is overlapped with other light emitting devices on the circuit board 201 and connected in series with each other, thereby improving the consumption efficiency, facilitating driving control by the driver, You can give.

The plurality of light emitting devices 151, 152 and 153 may be defined as a single light emitting unit, and the light emitting units may be arranged as a plurality of light emitting units 150 and 150A as shown in FIG. Each of the plurality of light emitting units 150 and 150A may be driven by an individual driver. That is, each of the light emitting units 150 and 150A can be individually driven, emits light of two or more colors, has a peak wavelength larger than the number of colors, and can improve the color reproduction rate.

The light emitting device package or the light emitting unit according to the embodiment can be applied to the light source device. The light source device may be applied to a lamp such as a display device, a lighting device, a vehicle lamp such as a fog lamp, a car light, a turn signal, a brake, a tail light, a reverse light, an upward light, a down light, and a fog light.

The above light source device may include at least one of an optical sheet having an optical lens or a light guide plate in a light output area. An example of the light source device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, a light emitting module disposed in front of the reflector, An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, And may include a color filter disposed in front thereof. Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Further, the display device may have a structure in which light emitting elements emitting red, green and blue light are disposed, respectively, without including a color filter.

As another example of the light source device, the head lamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, A lens that refracts light forward, and a shade that reflects off a portion of the light that is reflected by the reflector and that is directed to the lens to provide the designer with a desired light distribution pattern.

The lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. Further, the light source device according to the embodiment may further include at least one of a member and a holder. The light source module may include the light emitting device package according to the embodiment.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention.

110: Package body
121: First frame
131: Second frame
113: Body
118: Adhesive
151, 152, 153, 151A, 153A, 155, 156, 157:
P1, P3, and P5:
P2, P4, P6: the second electrode
181: Molding part
201: circuit board
211: first electrode pad
213: second electrode pad
P10, P11: Intermetallic compound layer

Claims (10)

First and second frames spaced apart from each other;
A body disposed between the first and second frames; And
A first light emitting element having first and second electrodes and disposed on the first frame;
A second light emitting element having first and second electrodes and disposed on the body; And
And an adhesive disposed between the second light emitting device and the body,
The wavelength of the light having the highest intensity among the wavelengths of the light emitted from the first light emitting device and the wavelength of the light having the largest intensity among the wavelengths of the light emitted from the second light emitting device are different from each other,
The second electrode of the first light emitting element is disposed to face the first electrode of the second light emitting element,
And a first intermetallic compound layer disposed between the second electrode of the first light emitting element and the first electrode of the second light emitting element. The method according to claim 1,
And a third light emitting element having first and second electrodes and disposed on the second frame,
The wavelength of the light having the highest intensity among the wavelengths of the light emitted from the third light emitting device differs from the wavelength of the light having the strongest intensity among the wavelengths of the light emitted from the first and second light emitting devices,
The first electrode of the third light emitting element is disposed to face the second electrode of the second light emitting element,
And a second intermetallic compound layer disposed between the first electrode of the third light emitting element and the second electrode of the second light emitting element. 3. The method of claim 2,
A first electrode of the first light emitting device is connected to the first frame by a wire, a second electrode of the third light emitting device is connected to the second frame by a wire,
Wherein a lower surface area of the first and second electrodes of the second light emitting device is larger than a top surface area of the second electrode of the first light emitting device and the first electrode of the third light emitting device. The method according to claim 1,
And a second electrode of the second light emitting device faces the second frame and is connected to the second frame. 3. The method of claim 2,
The first and third light emitting devices emit different peak wavelengths and main wavelengths of blue,
The second light emitting element emits a green peak wavelength,
And a molding part having a red phosphor on the first to third light emitting devices. 5. The method of claim 4,
The first light emitting device emits a blue wavelength,
The second light emitting element emits a green wavelength,
And a molding part having a red phosphor on the first and second light emitting devices. The method according to claim 2 or 3,
Wherein the first and second intermetallic compound layers include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , and Cu _x Ni _y , where x is 0 <x < = 1-x. The method according to claim 5 or 6,
And a cavity in which the upper portion of the package body is opened and the first and second frames are exposed and in which the molding portion is disposed. 3. The method of claim 2,
Wherein the adhesive contacts the first to third light emitting elements and contacts at least one of the body and the first and second frames,
And the body has a recess in which a part of the adhesive is disposed. The method according to claim 1,
The upper surface of the second frame is disposed higher than the upper surface of the first light emitting device,
Wherein the body includes an inclined side and is in contact with the adhesive.

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