KR20190000366A - Shingled solar cell module - Google Patents

Abstract

A high-efficiency configuration for a solar cell module includes solar cells that are electrically coupled to each other in a shingled manner to form supercells, which efficiently utilize the area of the solar cell module, reduce series resistance, . ≪ / RTI > The front metallization patterns on the solar cells can be configured to enable single step stencil printing, which is possible by the overlapping arrangement of solar cells in the supercells. The photovoltaic system may include two or more such high voltage solar cell modules electrically connected in parallel to each other and to the inverter. The solar cell cutting tools and the solar cell cutting methods apply a vacuum between the bottom surfaces of the solar cell wafer and the support surface of the curve to bend the solar cell wafer against the support surface of the curve, The solar cell wafer is cut along one or more pre-fabricated scribe lines. An advantage of these cutting tools and cutting methods is that they do not require physical contact with the top surfaces of the solar cell wafer. Solar cells are fabricated with reduced charge recombination losses at the edges of the solar cell, for example without cut edges that promote charge recombination. The solar cells may have narrow rectangular geometric structures and may be advantageously employed with shingled (overlapping) arrangements to form supercells.

Description

[0001] SHINGLED SOLAR CELL MODULE [0002]

The present invention generally relates to solar cell modules in which solar cells are arranged in a shingled manner.

This international patent application is a continuation-in-part of US patent application Ser. No. 14 / 530,405 entitled "Shingled Solar Cell Module" filed on October 31, 2014, US patent application Ser. No. 14 / 532,293 entitled " Shingled Solar Cell Module ", filed on November 7, 2014, Shingled Solar Cell Module ", filed November 12, 2014, entitled " Shingled Solar Cell Module " US Patent Application No. 14 / 543,580 entitled " Shingled Solar Cell Module " filed on November 17, 2014, filed on November 19, 2014, US Patent Application No. 14 / 548,081 entitled " Shingled Solar Cell Module ", U.S. Patent Application No. 14/5, filed on November 21, 2014 50,676 entitled " Shingled Solar Cell Module ", U.S. Patent Application No. 14 / 552,761, entitled " Shingled Solar Cell Module, " filed on November 25, Quot; Shingled Solar Cell Module "), U.S. Patent Application No. 14 / 560,577, entitled "Shingled Solar Cell Module," filed on Dec. 4, 2014, U.S. Patent Application No. 14 / 566,878, entitled " Shingled Solar Cell Module ", filed on Dec. 10, 2014, Quot; Shingled Solar Cell Module "), U.S. Patent Application No. 14 / 572,206, filed December 16, 2014 entitled " Shingled Solar Cell Module Solar Cell Module "), U.S. Patent Application No. 14 / 577,593, entitled" Shingled Solar Cell Module "filed on December 19, 2014, , US patent application Ser. No. 14 / 586,025 (entitled "Shingled Solar Cell Module") filed on December 30, 2014, US patent application filed on December 30, 2014 No. 14 / 585,917 entitled " Shingled Solar Cell Module ", U.S. Patent Application No. 14 / 594,439, filed January 12, 2015 Quot; Shingled Solar Cell Module "), U.S. Patent Application No. 14 / 605,695, entitled "Shingled Solar Cell Module" filed on January 26, 2015, 2014 US provisional patent application No. 62 / 003,223 entitled " Shingled Solar Cell Module ", filed on Mar. 27, 2008, filed on August 12, 2014, 62 / 036,215 entitled " Shingled Solar Cell Module ", U.S. Provisional Patent Application No. 62 / 042,615, filed on August 27, 2014 Quot; Shingled Solar Cell Module ", filed on September 11, 2014, and US Provisional Patent Application No. 62 / 048,858 entitled " Shingled Solar Cell Module Quot; Shingled Solar Cell Module ", filed October 15, 2014, entitled " Shingled Solar Cell Module ", filed on October 15, 2014, US provisional patent application No. 62 / 064,834 entitled " Shingled Solar Cell Module ", filed on March 16, US Patent Application No. 14 / 674,983, filed March 31, 2015, (Shingled Solar Cell Panel Employing Hidden Taps), U.S. Provisional Patent Application No. 62 / 081,200, filed November 18, 2014, entitled "Shingled Solar Cell Panel Employing Hidden Taps" Title: "Solar Cell Panel Employing Hidden Taps"), US provisional patent application filed on February 6, 2015 No. 62 / 113,250 entitled " Shingled Solar Cell Panel Employing Hidden Taps "), U.S. Provisional Patent Application No. 62 / 113,250 filed on November 21, 2014, 082,904 entitled " High Voltage Solar Panel "), U.S. Provisional Patent Application No. 62 / 103,816 filed on January 15, 2015 entitled " High Voltage Solar Panel High Voltage Solar Panel "), U.S. Provisional Patent Application No. 62 / 111,757 filed on Feb. 4, 2015 entitled" High Voltage Solar Panel ", March 17, 2015 No. 62 / 134,176, entitled " Solar Cell Cleaving Tools and Methods ", filed on April 21, 2015, 62 / 150,426 (entitled " Shingled Solar Cell Pan < RTI ID = 0.0 > US Patent Application No. 62 / 035,624, filed on August 11, 2014 entitled " Solar Cells with Reduced Edge Charge Reassembly ", entitled " Compressing Stencil-Printed Cell Metallization " Edge Carrier Recombination "), US Design Patent Application No. 29 / 506,415, filed October 15, 2014, US Design Patent Application No. 29 / 506,755, filed October 20, 2014, November 5, 2014 US Design Patent Application No. 29 / 508,323, filed on November 19, 2014, and US Design Patent Application No. 29 / 509,586, filed November 19, 2014, 509,588 with priority. Each of the foregoing patent applications listed above is incorporated herein by reference in its entirety for all purposes.

Alternative sources of energy are required to meet all the increasing global energy demands. Solar energy resources are sufficient in many geographic areas to meet these needs, in part, by the supply of power generated by solar (e.g., photovoltaic) cells.

Highly efficient arrangements of solar cells in a solar cell module and methods of making such solar modules are disclosed herein.

In one aspect, the solar module comprises a series connected string of N? 25 rectangular or substantially rectangular solar cells having a breakdown voltage greater than about 10 volts. The solar cells are stacked one or more supercells comprising two or more of the solar cells arranged in line with the long sides of adjacent solar cells that are superimposed and electrically coupled to each other with an electrically and thermally conductive adhesive super cells). A single solar cell or group of N solar cells in the string of solar cells is not individually electrically connected in parallel to a bypass diode. The safety and reliable operation of the photovoltaic module is enabled by effective thermal conduction along the super cells through the combined and overlapping portions of adjacent solar cells, which can be achieved by providing hot spots hot spots < / RTI > The supercells can be encapsulated, for example, in a thermoplastic olefin polymer interposed between glass front and back sheets, further enhancing the robustness of the module to thermal damage. In some variations, N is ≥30, ≥50, or ≥100.

In another aspect, the supercell is a rectangle or a rectangle having shapes defined by parallel long sides and first and second oppositely positioned short sides, respectively, Includes a plurality of silicon solar cells having a substantially rectangular front (sun side) and rear surfaces. Each solar cell having an electrically conductive front metallization pattern having at least one front contact pad located adjacent to the first elongated side and at least one rear contact positioned adjacent the second elongated side, And an electrically conductive backside metallization pattern having pads. The silicon solar cells are stacked so as to electrically connect the silicon solar cells in series, and the first and second long sides of the adjacent silicon solar cells are stacked and connected to each other by an adjacent silicon solar cell Lt; RTI ID = 0.0 > and / or < / RTI > Wherein the front metallization pattern of each silicon solar cell is configured to substantially limit the conductive adhesive bonding material to the at least one front contact pads prior to curing the conductive adhesive bonding material during fabrication of the supercell. Lt; / RTI > barrier.

In another aspect, the supercell is a rectangular or substantially rectangular front having a shape defined by first and second opposedly positioned parallel long sides and two opposedly positioned short sides, And a plurality of silicon solar cells having a back surface. Each solar cell having an electrically conductive front metallization pattern having at least one front contact pad positioned adjacent the first long side and at least one rear contact pad positioned adjacent the second long side Lt; RTI ID = 0.0 > metallization < / RTI > The silicon solar cells are stacked so as to electrically connect the silicon solar cells in series, and the first and second long sides of the adjacent silicon solar cells are stacked and connected to each other by an adjacent silicon solar cell Lt; RTI ID = 0.0 > and / or < / RTI > Wherein the back metallization pattern of each silicon solar cell comprises a barrier configured to substantially limit the conductive adhesive bonding material to the at least one rear contact pads prior to curing the conductive adhesive bonding material during manufacture of the supercell do.

In another aspect, a method of making a string of solar cells includes forming a plurality of rectangular silicon solar cells each having a length along one of its longitudinal axes, one or more along a plurality of lines parallel to the long edge of each wafer to form a plurality of rectangular silicon solar cells, And dicing the pseudo-square silicon wafers. The method also includes arranging the rectangular silicon solar cells in series with the long sides of adjacent solar cells that are overlapped and electrically coupled to each other to electrically connect the solar cells in series. Wherein the plurality of rectangular silicon solar cells have at least one rectangular solar cell having two chamfered edges corresponding to the edges or portions of the edges of the pseudo-square wafer, and wherein each of the chamfered edges is deficient Lt; RTI ID = 0.0 > silicon solar cells. ≪ / RTI > Wherein the spacing between parallel lines in which the pseudo-square wafers are diced is greater than a width of the square silicon solar cells having the chamfered edges, the width being orthogonal to the long axis of the rectangular silicon solar cell lacking the chamfered edges Wherein each of the plurality of square silicon solar cells in the string of solar cells is exposed to light in the operation of the string of solar cells as it is selected to compensate for the chamfered edges by making it larger than the width orthogonal to the long axis of the cells Having substantially the same area.

In another aspect, the supercell includes a plurality of silicon solar cells arranged in a line with the ends of adjacent solar cells superposed and electrically coupled to each other to electrically connect the solar cells in series. Wherein at least one of the silicon solar cells has chamfered edges corresponding to corners or edges of a pseudo-square silicon wafer to which it has been diced, at least one of the silicon solar cells lacking chamfered edges, Each of the silicon solar cells has a front surface of substantially the same area exposed to light during operation of the string of solar cells.

In another aspect, a method of making two or more supersells comprises forming a first plurality of rectangular silicon solar cells having chamfered edges corresponding to corners or portions of edges of pseudo-square silicon wafers, Square silicon wafers to form a second plurality of rectangular silicon solar cells having a first length over the entire width of the pseudo-square silicon wafers and lacking chamfered edges do. The method also includes forming a third plurality of rectangular silicon solar cells each having a second length less than the first length and having chamfered edges lacking, removing the first plurality of rectangular silicon solar cells from each of the first plurality of rectangular silicon solar cells And removing the chamfered edges. The method includes forming a plurality of rectangular silicon solar cells overlapping and electrically conducting to each other to electrically connect the second plurality of rectangular silicon solar cells to form a solar cell string having the same width as the first length, Arranging the second plurality of rectangular silicon solar cells in line with the long sides of the third plurality of rectangular silicon solar cells to form a solar cell string having the same width as the second length, The method further comprises arranging the third plurality of rectangular silicon solar cells in series with the long sides of adjacent rectangular silicon solar cells that are electrically coupled to each other electrically in series.

In another aspect, a method of making two or more supersells comprises forming a first plurality of rectangular silicon solar cells having chamfered edges corresponding to corners or portions of corners of pseudo-square silicon wafers, Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to the long edge of each wafer to form a second plurality of rectangular silicon solar cells lacking processed edges, Arranging the first plurality of rectangular silicon solar cells in series with the long sides of adjacent rectangular silicon solar cells superposed and electrically coupled to each other to electrically connect the rectangular silicon solar cells in series; The second plurality of rectangular silicon solar cells And arranging the second plurality of rectangular silicon solar cells in series with the long sides of adjacent rectangular silicon solar cells which are overlapped and electrically coupled to each other to electrically connect the cells in series.

In another aspect, a supercell includes a plurality of silicon solar cells arranged in a line in a first direction and end portions of adjacent silicon solar cells superposed and electrically coupled to each other to electrically connect the silicon solar cells in series, and Wherein the silicon solar cell has a long axis oriented parallel to a second direction orthogonal to the first direction and is electrically coupled to a front surface or a back surface of an end of the silicon solar cells at a plurality of discrete locations arranged along the second direction, And having a thickness less than or equal to about 100 microns measured orthogonally to the front or back surface of the end silicon solar cell and having a thickness of about 0.012 Ohm, Less than or equal to about < RTI ID = 0.0 > 85 C < / RTI > And an elongated flexible electrical interconnect that provides flexibility to accommodate differential expansion in the second direction between the end silicon solar cell and the interconnect with respect to the first silicon solar cell.

The flexible electrical interconnect may have a conductor thickness of less than or equal to about 30 microns, measured orthogonally to the front and back sides of the end silicon solar cell, for example. The electrical interconnect may extend in the second direction through the supercell to provide electrical interconnections to at least a second supercell positioned parallel and adjacent to the sacrificial supercell within the solar module. Additionally or alternatively, the flexible electrical interconnect may extend through the supercell so as to provide electrical interconnection to a second supercell located in a line parallel to the supercell within the solar module. have.

In another aspect, a solar module includes a plurality of supercells arranged in two or more parallel rows spanning the width of the module to form a front surface of the module. Each supercell includes a plurality of silicon solar cells arranged in a line with the ends of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells in series and electrically connected to each other. At least the end of the first supercell adjacent to the edge of the module in the first row is bonded to the front surface of the second supercell at a plurality of distinct locations with an electrically conductive adhesive bond material, Adjacent at the same edge of the module in a second row through a flexible electrical interconnect, at least a portion of which is folded about the end of the module and concealed in the field of view from the front of the module And is electrically connected to the end portion.

In another aspect, a method of making a supercell includes forming one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on silicon solar cells, Scribing comprises applying an electrically conductive adhesive bonding material to said one or more scribed silicon solar cells at one or more locations adjacent to the long side of each rectangular area, Separating the silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells having a portion of the electrically conductive adhesive bonding material disposed on a front side thereof adjacent to the plurality of rectangular silicon solar cells, Silicon solar cells are placed between them Is arranged in line with the long sides of adjacent rectangular silicon solar cells which are overlapped in a shingled manner as part of the electrically conductive adhesive bond material and the electrically conductive bonding material is cured Thereby joining adjacent and overlapping rectangular silicon solar cells together and electrically connecting them in series.

In another aspect, a method of making a supercell includes: laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on the silicon solar cells Applying an electrically conductive adhesive bond material to portions of the upper surfaces of the one or more silicon solar cells; bending the one or more silicon solar cells against a supporting surface of the curve; With a portion of the electrically conductive adhesive bonding material disposed on a front side thereof adjacent to each long side thereof, thereby applying a vacuum between the bottom surfaces of the one or more silicon solar cells and the curved supporting surface, To provide rectangular silicon solar cells. Cutting the further silicon solar cells along the stripline lines to form a plurality of rectangular silicon solar cells with adjacent rectangles overlapping in a shading manner as part of the electrically conductive adhesive bonding material disposed therebetween; Aligning with the long sides of the silicon solar cells of the adjacent silicon solar cells and curing the electrically conductive bonding material to couple adjacent and overlapping rectangular silicon solar cells together and electrically connecting them in series .

In another aspect, a method of fabricating a solar module includes assembling a plurality of supercells, each supercell being overlapped in a shingled manner and being aligned with ends on long sides of adjacent rectangular silicon solar cells, And a plurality of rectangular silicon solar cells arranged in a row. The method also includes curing the electrically superimposed electrically conductive bonding material disposed between the overlapping ends of the adjacent rectangular silicon solar cells by applying heat and pressure to the super cells to form adjacent, Coupling the batteries and electrically connecting them in series. The method may also include arranging and interconnecting the supercells in a desired photovoltaic module configuration within a stack of layers comprising encapsulant and forming a stack of layers to form a laminated structure, Lt; RTI ID = 0.0 > and / or < / RTI >

Some variations of the method include applying heat and pressure to the supercells prior to applying heat and pressure to the stack of layers to form the laminated structure to cure or partially cure the electrically conductive bonding material Curing to form super cells that are cured or partially cured as an intermediate product prior to forming the laminated structure. In some variations, each additional rectangular silicon solar cell is added to the supercell during assembly of the supercell so that the electrically-conductive adhesive bonding material between the newly added solar cell and its adjacent and overlapping solar cells is random Of other rectangular silicon solar cells are cured or partially cured before being added to the supercell. Alternatively, some variations include curing or partially curing the electrically conductive bonding material in the supercell in the same step.

When the supercells are formed as partially cured intermediate products, the method completes curing of the electrically conductive bonding material while applying heat and pressure to the stack of layers to form the laminated structure Step < / RTI >

Some modifications of the method do not form super cells that are cured or partially cured as an intermediate product prior to forming the laminated structure, but apply heat and pressure to the stack of layers to form the laminated structure And curing the electrically conductive bonding material.

The method may include dicing one or more standard sized silicon solar cells into rectangular shapes of smaller area to provide the rectangular silicon solar cells. Wherein the electrically conductive adhesive bond material is applied to the one or more silicon solar cells prior to dicing the one or more silicon solar cells to provide the rectangular silicon solar cells with a previously applied electrically conductive adhesive bonding material, Lt; / RTI > Alternatively, the electrically conductive adhesive bond material may be applied to the rectangular silicon solar cells after dicing the one or more silicon solar cells to provide the rectangular silicon solar cells.

In one aspect, a solar module includes a plurality of supercells arranged in two or more parallel rows. Each supercell includes a plurality of rectangular or substantially rectangular silicon solar cells arranged in series with the long sides of adjacent silicon solar cells which are superimposed to electrically connect the silicon solar cells in series and are conductively coupled to each other. The solar panel also includes a first hidden tab contact pad located on the back side of the first solar cell positioned at an intermediate position along the first side of the supercells, And a second electrical interconnect electrically coupled to the first electrical interconnect. The first electrical interconnect includes a stress relief feature that accommodates differential thermal expansion between the interconnect and the silicon solar cell to which it is coupled. The term " stress relieving feature " is used herein to refer to the thickness of the interconnect (e. G., Very thin) and / or the kink ), A loop, or a slot. For example, the stress relieving feature may be that the interconnect is formed of a very thin copper ribbon.

The solar module includes a second hidden tab contact pad located on a rear surface of a second solar cell located adjacent to the first solar cell at an intermediate position along a second of the supergels in an adjacent super cell row And the first hidden tap contact pad is electrically connected to the second hidden tab contact pad through the first electrical interconnect. In such cases, the first electrical interconnect may extend across a gap between the first supercell and the second supercell, and may be conductively coupled to the second hidden tab contact pad . Optionally, the electrical connection between the first and second hidden tab contact pads is electrically coupled to the second hidden tab contact pad and electrically coupled to the first electrical interconnect (e.g., electrically coupled Lt; RTI ID = 0.0 > interconnection). ≪ / RTI > Each interconnect scheme can be selectively extended over additional columns of supersells. For example, each interconnection scheme can be selectively extended over the entire width of the module to interconnect the solar cells within each column through the hidden tab contact pads.

The solar module includes a second hidden tap contact pad located on a rear surface of a second solar cell located at another intermediate position along a first one of the supercells, 2 electrical interconnect and a bypass diode electrically connected in parallel with the solar cells located between the first and second hidden tap contact pads by the first and second electrical interconnects, .

In any of the above variants, the first hidden tap contact pad comprises one of a plurality of hidden tab contact pads arranged on the back surface of the first solar cell in a row running parallel to the long axis of the first solar cell Wherein the first electrical interconnect is conductively coupled to each of the plurality of hidden contacts and substantially traverses the length of the first solar cell along the long axis. Additionally or alternatively, the first hidden tap contact pad may be one of a plurality of hidden tab contact pads arranged on the back surface of the first solar cell in a row running orthogonal to the long axis of the first solar cell . In the latter case, the rows of hidden tab contact pads may be located, for example, adjacent a short edge of the first solar cell. The first hidden tap contact pad may be one of a plurality of hidden tab contact pads arranged in a two-dimensional array on the rear surface of the first solar cell.

Optionally, in any of the foregoing variations, the first hidden tap contact pad may be located adjacent to the long side of the back surface of the first solar cell, and the first electrical interconnect may extend along the long axis of the solar cell Wherein the back metallization pattern on the first solar cell is preferably less than or equal to about 5 ohms per square, or less than about 2.5 ohms per square, relative to the interconnect, To provide a conductive passage having a sheet resistance of less than or equal to the sheet resistance. In such cases, the first interconnect may include, for example, two taps located on opposite sides of the stress relief feature, one of the taps being on the first hidden tab contact pad And can be electrically coupled. The two tabs may have different lengths.

In any of these variations, the first electrical interconnect may be used to identify a desired alignment with the first hidden tap contact pad, to confirm a desired alignment with the edge of the first super cell, Alignment features to ensure desired alignment with the pad and desired alignment with the edge of the first supercell.

In another aspect, a solar module comprises a glass front sheet, a back sheet, and a plurality of supersells arranged in two or more parallel rows between the glass front sheet and the back sheet . Each supercell includes a plurality of rectangular or substantially rectangular silicon solar cells arranged in series with the long sides of adjacent silicon solar cells which are overlapped to electrically connect the silicon solar cells in series and are conductively coupled to each other. A first flexible electrical interconnect is tightly coupled to the first of the supercells in a conductive manner. Wherein the flexible conductive bonds between the overlapping solar cells are arranged in the supercelles in a direction parallel to the columns for a temperature range of about -40 DEG C to about 100 DEG C without damaging the solar modules, And provides mechanical compliance to accommodate thermal expansion mismatches between the front and back sheets. Wherein the rigid conductive connection between the first supercell and the first flexible electrical interconnect is such that the first flexible electrical interconnect does not damage the photovoltaic module and does not damage the solar modules for a temperature range of about -40 [ To accommodate the thermal expansion mismatch between the first supercell and the first flexible electrical interconnect in an orthogonal direction.

The conductive bonds between overlapping and adjacent solar cells in the supercell may use a conductive adhesive different from the conductive bonds between the supercell and the flexible electrical interconnect. In one aspect of the at least one solar cell in the supercell, the conductive bonding may use a conductive bonding agent different from the conductive bonding at the other side of the solar cell. The conductive adhesive that forms a tight bond between the supercell and the flexible electrical interconnect may be, for example, a solder. In some variations, the conductive bonds between overlapping solar cells in the supercell are formed of a conductive adhesive rather than solder, and the conductive bond between the supercell and the flexible electrical interconnect is formed of solder.

In some variations using two different conductive adhesives as described above, both conductive adhesives may be cured (e.g., at the same temperature, at the same pressure and / or the same time interval) in the same process step .

The conductive bonds between the overlapping and adjacent solar cells can accommodate differential motion between each glass cell and the glass front substrate, e.g., greater than or equal to about 15 microns.

The conductive bonds between the overlapping and adjacent solar cells may have a thickness of, for example, less than or equal to about 50 microns and a thickness that is greater than or equal to about 1.5 W / (meter-K) The thermal conductivity may be orthogonal to the thermal conductivity.

The first flexible electrical interconnect can withstand thermal expansion or contraction of the first flexible interconnect, for example, greater than or equal to about 40 microns.

A portion of the first flexible electrical interconnect that is conductively coupled to the supercell may be the same as a ribbon formed of copper and may be formed of a material such as, for example, And may have a thickness perpendicular to the surface of the battery. The first flexible electrical interconnect may include an essentially conductive copper portion that is not coupled to the solar cell and that provides a higher conductivity than a portion of the first flexible electrical interconnect that is conductively coupled to the solar cell. The first flexible electrical interconnect having a thickness perpendicular to the surface of the solar cell to which it is coupled and less than or equal to about 30 microns, or less than or equal to about 50 microns, And may have a width greater than or equal to about 10 mm in the plane of the surface of the battery. The first flexible electrical interconnect may be conductively coupled to a conductor proximate the solar cell providing a higher conductivity than the first electrical interconnect.

In another aspect, a solar module includes a plurality of supercells arranged in two or more parallel rows. Each supercell has a plurality of rectangular or substantially rectangular silicon solar cells arranged in a line with long sides of adjacent silicon solar cells stacked to electrically connect the silicon solar cells in series and directly coupled to each other in a conductive manner . A hidden tab contact pad that does not conduct a valid current in normal operation is located on the back surface of the first solar cell located at an intermediate position along a first of the supercells in the first of the rows of supersells. The hidden tab contact pads are electrically connected in parallel to at least a second solar cell in a second one of the rows of supersells.

The solar module may include an electrical interconnect coupled to the hidden tab contact pad and electrically interconnecting the hidden tab contact pad to the second solar cell. In some variations, the electrical interconnect does not substantially extend over the length of the first solar cell, and the back metallization pattern on the first solar cell has a sheet resistance greater than or equal to about 50 ohms per square Providing a conductive pathway to the tab contact pad.

The plurality of supersells may be arranged in three or more parallel columns across the width of the solar module orthogonal to the columns and the hidden tab contact pads electrically connect all the columns of the supersells electrically And are electrically connected to the hidden tab contact pads on at least one solar cell in each of the columns of super cells to connect. In these variations, the photovoltaic module includes at least one bus connection to at least one of the hidden tab contact pads or hidden tab contact pads connected to the bypass diode or other electronic device, . ≪ / RTI >

The solar module may include a flexible electrical interconnect electrically coupled to the hidden tab contact pad to electrically connect the solar module to the second solar cell. A portion of the flexible electrical interconnect that is conductively coupled to the hidden tab contact pad is, for example, a ribbon formed of copper and has a cross-sectional area that is perpendicular to the surface of the solar cell to which it is coupled, such as less than about 50 microns Thickness. The conductive connection between the hidden tab contact pad and the flexible electrical interconnect may allow the flexible electrical interconnect to withstand the thermal expansion mismatch between the first solar cell and the flexible interconnect, To allow relative movement between the first solar cell and the second solar cell resulting from thermal expansion over a temperature range of 40 [deg.] C to about 180 [deg.] C.

In some variations, in operation of the photovoltaic module, the first hidden tap contact pad is capable of conducting a current greater than the current generated in any one of the solar cells.

Typically, the surface of the first solar cell overlying the first hidden tap contact pad is not occupied by contact pads or any other interconnect features. Typically, any area of the front surface of the first solar cell that is not overlapped by a portion of the adjacent solar cells in the first supersat is not occupied by the contact pads or any other interconnect features.

In some variations, most of the cells in each supercell have no hidden tap contact pads. In such variations, cells having hidden tab contact pads may have a larger condensed area than cells having no hidden tab contact pads.

In another aspect, a solar module comprises a glass front sheet, a back sheet, and a plurality of supercells arranged in two or more parallel rows between the glass front sheet and the back sheet. Each of the supercells includes a plurality of rectangular or substantially rectangular silicon solar cells which are superimposed to electrically connect the silicon solar cells in series and are arranged in line with long sides of adjoining silicon solar cells, Respectively. A first flexible electrical interconnect is tightly coupled to the first of the supercells in a conductive manner. The flexible conductive bonds between the overlapping solar cells are formed of a first conductive adhesive and have a shear modulus less than or equal to about 800 megapascals. The rigid conductive bond between the first supercell and the first flexible electrical interconnect is formed of a second conductive adhesive and has a shear modulus greater than or equal to about 2000 megapascals.

The first conductive adhesive may have a glass transition temperature of, for example, less than or equal to about 0 ° C.

In some variations, the first conductive adhesive and the second conductive adhesive are different, and all of the conductive adhesives can be cured in the same process.

In some variations, the conductive bonds between the overlapping and adjacent solar cells have a thickness that is less than or equal to about 50 microns and a thickness that is perpendicular to the solar cells and greater than or equal to about 1.5 W / It can have a thermal conductivity perpendicular to the solar cells.

In one aspect, the solar module comprises rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 250 arranged as a plurality of serially connected supercells in two or more parallel rows. Each of the supercells includes a plurality of silicones arranged in series with long sides of adjacent silicon solar cells which are superimposed to electrically connect the silicon solar cells in the supercell electrically and thermally conductive with each other, Solar cells. The supercells are electrically connected to provide a high DC voltage of greater than or equal to about 90 volts.

In one variation, the solar module includes one or more flexible electrical interconnects arranged to electrically serially connect the plurality of supercells to provide a high DC voltage. The solar module may include module level power electronics including an inverter to convert the high DC voltage to an AC voltage. The module level power electronics can sense the high DC voltage and can operate the module at an optimal current-voltage power point.

In another variation, the photovoltaic module is electrically connected to individual pairs of adjacent series-connected columns of supercells, and one or more pairs of columns of the supercells are electrically connected in series to provide the high dc voltage And a module level power electronics having an inverter for converting the high DC voltage into an AC voltage. Optionally, the module level power electronics may sense a voltage across each individual pair of columns of the supercells and may operate each individual pair of columns of supercells at an optimal current-voltage power point. Optionally, the module level power electronics may switch a respective pair of columns of the supercells from a circuit providing the high dc voltage when the voltage across the pair of columns is below a threshold value.

In another variation, the photovoltaic module is electrically coupled to each individual column of the supercells and electrically connects two or more of the columns of supersells to provide the high dc voltage, And a module level power electronics having an inverter for converting the voltage to an alternating voltage. Optionally, the module level power electronics can sense a voltage across each individual column of the supersells and operate each individual column of the supersells at an optimal current-voltage power point. Optionally, the module level power electronics may switch the individual rows of the supercells from a circuit providing the high dc voltage when the voltage across the rows of supersells is below a threshold.

In another variation, the photovoltaic module is electrically connected to each respective supercell and electrically connects two or more of the supercells electrically to provide the high dc voltage, And a module level power electronics having an inverter for converting the voltage to a voltage. Optionally, the module-level power electronics can sense a voltage across each individual supercell and operate each individual supercell at an optimal current-voltage power point. Optionally, the module level power electronics may switch the individual supercells from a circuit providing the high DC voltage when the voltage across the supercell is below a threshold.

In another variation, each supercell in the module is electrically divided into a plurality of segments by hidden taps. The solar module is electrically connected to each segment of each supercell through the hidden tabs and electrically connects two or more segments electrically to provide the high DC voltage, Module-level power electronics with inverters for conversion. Optionally, the module-level power electronics can enable the module-level power electronics to sense voltages across each segment of each supercell and operate each individual segment at an optimal current-voltage power point. Optionally, the module level power electronics may switch individual segments from the circuit providing the high DC voltage if the voltage across the segment is below a threshold.

In any of these variations, the optimal current-voltage power point may be a maximum current-voltage power point.

In any of these variations, the module level power electronics may be devoid of a DC to DC boost component.

In any of these variations, N is greater than or equal to about 200, greater than or equal to about 250, greater than or equal to about 300, greater than or equal to about 350, greater than or equal to about 400, Greater than or equal to about 450, greater than or equal to about 500, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, and greater than or equal to about 700.

In any of these variations, the high direct current voltage may be greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, greater than or equal to about 300 volts, Greater than or equal to 360 volts, greater than or equal to about 420 volts, greater than or equal to about 480 volts, greater than or equal to about 540 volts, or greater than or equal to about 600 volts.

In another aspect, a solar photovoltaic system includes two or more solar modules and an inverter that are electrically connected in parallel. Each photovoltaic module includes rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 150 arranged as a plurality of supers cells in two or more parallel rows. Each solar cell in each module includes two or more of the silicon solar cells arranged in series with the long sides of adjacent silicon solar cells that overlap and electrically conductively couple to each other to electrically connect the silicon solar cells in series do. In each module, the supercells are electrically connected to provide a high voltage DC module output greater than or equal to about 90 volts. The inverter is electrically connected to the two or more solar modules to convert their high voltage direct current output into alternating current.

Each photovoltaic module may include one or more flexible electrical interconnects arranged to electrically connect the supercells in the photovoltaic module electrically to provide a high voltage dc output of the photovoltaic module.

The solar power generation system may include at least a third solar module connected in series with the first one of the two or more solar modules electrically connected in parallel. In such cases, the third solar module may comprise rectangular or substantially rectangular silicon solar cells of number N 'greater than or equal to about 150 arranged as a plurality of supers cells in two or more parallel rows have. Each of the supercells in the third solar module is connected to the silicon solar cells in the module, which are arranged in line with long sides of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells in series, Two or more. In the third solar module, the supercells are electrically connected to provide a high-voltage DC module output greater than or equal to about 90 volts.

Modifications, including the third solar module, electrically connected in series with the first one of the two or more solar modules as described above, may also be applied to the two or more solar modules And at least a fourth solar module electrically connected in series with the second solar module. The fourth photovoltaic module may comprise rectangular or substantially rectangular silicon solar cells with a number N "greater than or equal to about 150 arranged as a plurality of supers cells in two or more parallel rows. Each supercell in the solar module is connected to two or more of the silicon solar cells in the module which are arranged in line with the long sides of adjacent silicon solar cells that overlap and electrically conductively couple with each other to electrically connect the silicon solar cells in series, In the fourth solar module, the supercells are electrically connected to provide a high-voltage DC module output greater than or equal to about 90 volts.

The photovoltaic system may include fuses and / or fuses arranged to prevent short circuits occurring within any of the photovoltaic modules from dissipating power generated in other photovoltaic modules. And may include blocking diodes.

The photovoltaic power generation system may include positive and negative buses in which the two or more solar modules are electrically connected in parallel and the inverter is connected to the battery. Alternatively, the solar power generation system may include a combiner box in which the two or more solar modules are electrically connected by separate conductors. The combiner box connects the solar modules electrically in parallel and fuses arranged to prevent a short circuit in any of the solar modules from dissipating power generated in other solar modules and / Blocking diodes.

The inverter may be configured to operate the solar modules at a DC voltage greater than or equal to a minimum value set to avoid reverse biasing the solar module.

The inverter may be configured to recognize reverse bias conditions that occur within one or more of the solar modules and to operate the solar modules at a voltage that avoids the reverse bias condition.

The solar power generation system may be located on the roof top.

In any of these variations, N, N 'and N " are greater than or equal to about 200, greater than or equal to about 250, greater than or equal to about 300, greater than or equal to about 350, Greater than or equal to about 450, greater than or equal to about 450, greater than or equal to about 500, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, N, N 'and N " may have the same or different values.

In any of these variations, the high DC voltage provided by the solar module may be greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, or less than or equal to about 300 volts Greater than or equal to about 360 volts, greater than or equal to about 420 volts, greater than or equal to about 480 volts, greater than or equal to about 540 volts, and greater than or equal to about 600 volts have.

In another aspect, a photovoltaic system includes a first solar cell having rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 150 arranged as a plurality of supers cells in two or more parallel rows Module. Each supercell includes a plurality of silicon solar cells arranged in a line with long sides of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells in series and being conductively coupled to each other. The system also includes an inverter. The inverter may be, for example, a micro inverter integrated with the first solar module. The supercells in the first photovoltaic module are electrically connected to provide a high DC voltage greater than or equal to about 90 volts to the inverter that converts DC to AC.

The first photovoltaic module may include one or more flexible electrical interconnects arranged to electrically connect the supercells in the photovoltaic module electrically in series to provide a high voltage dc output of the photovoltaic module.

The solar power generation system may include at least a second solar module electrically connected in series to the first solar module. The second photovoltaic module may comprise rectangular or substantially rectangular silicon solar cells of number N 'greater than or equal to about 150 arranged as a plurality of supers cells in two or more parallel rows. Wherein each of the supercells in the second solar module is connected to a plurality of silicon solar cells in the module which are arranged in line with long sides of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells in series, Two or more. In the second solar module, the supercells are electrically connected to provide a high-voltage DC module output greater than or equal to about 90 volts.

The inverter (e. G., A microinverter) may be deficient in DC to DC boost components.

In any of these variations, N and N 'may be greater than or equal to about 200, greater than or equal to about 250, greater than or equal to about 300, greater than or equal to about 350, or greater than or equal to about 400 Greater than or equal to about 450, greater than or equal to about 500, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, and greater than or equal to about 700 have. N and N 'may have the same or different values.

In any of these variations, the high DC voltage provided by the solar module may be greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, or less than or equal to about 300 volts Greater than or equal to about 360 volts, greater than or equal to about 420 volts, greater than or equal to about 480 volts, greater than or equal to about 540 volts, and greater than or equal to about 600 volts have.

In another aspect, a solar module comprises rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 250 arranged as a plurality of serially connected supercells in two or more parallel rows. Each supercell includes a plurality of super-cells arranged in a line with long sides of adjacent silicon solar cells which are superimposed to electrically connect the silicon solar cells in the supercell electrically and thermally and electrically conductive to each other with an electrically and thermally conductive adhesive Silicon solar cells. The photovoltaic module includes one or more bypass diodes per 25 solar cells. Wherein the electrically and thermally conductive adhesive is applied to adjacent solar cells with a thickness that is less than or equal to about 50 microns and that is perpendicular to the solar cells and greater than or equal to about 1.5 W / Thereby forming bonds having an orthogonal thickness thermal conductivity.

The supercells can be encapsulated within the thermoplastic olefin layer between the front and back sheets. The super cells and their encapsulant may be interposed between the glass front and back sheets.

The solar module may comprise, for example, one or more bypass diodes per thirty solar cells, or one bypass diode per 50 solar cells, or one bypass diode per 100 solar cells . ≪ / RTI > The photovoltaic module may include, for example, bypass diodes, or only a single single bypass diode, or bypass diodes that do not exceed three, or bypass diodes that do not exceed six, And may include bypass diodes that do not exceed the column.

Wherein the conductive bonds between the superposed solar cells are arranged in a direction parallel to the column for a temperature range of about -40 DEG C to about 100 DEG C without damaging the solar cell module with respect to the super cells, It is possible to selectively provide mechanical compliance to accommodate discrepancies in thermal expansion between the sheets.

In any of these variations, N is greater than or equal to about 300, greater than or equal to about 350, greater than or equal to about 400, greater than or equal to about 450, greater than or equal to about 500, Greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, and greater than or equal to about 700.

In any of these variations, the supercells can be greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, greater than or equal to about 300 volts, Electrically connected to provide a high direct current voltage greater than or equal to a volt, greater than or equal to about 420 volts, greater than or equal to about 480 volts, greater than or equal to about 540 volts, or greater than or equal to about 600 volts .

The solar energy system comprises a solar module of any of the preceding variations and an inverter electrically connected to the solar module and configured to convert the DC output from the solar module to provide an AC output For example, a microinverter). The inverter may be deficient in DC to DC components. The inverter may be configured to operate the solar module at a DC voltage greater than a minimum voltage set to avoid reverse biasing of the solar cell. The minimum voltage value may be temperature dependent. The inverter may be configured to recognize a reverse bias condition and operate the solar module at a voltage that avoids the reverse bias condition. For example, the inverter may be configured to operate the solar module in a local maximum region of the voltage-current output curve of the solar module to avoid the reverse bias condition.

In this specification, solar cell cleaving tools and solar cell cleaving methods are disclosed.

In one aspect, a method of fabricating solar cells includes advancing a solar cell wafer along a surface of a curve and between the surface of the curve and the bottom surface of the solar cell wafer to bend the solar cell wafer against a surface of a curve And cutting the solar cell wafer along one or more pre-arranged scribe lines to separate a plurality of solar cells from the solar cell wafer. The solar cell wafer may be processed continuously, for example, along the surface of the curve. Alternatively, the solar cell may travel along the surface of the curve with separate movements.

The surface of the curve may be, for example, a portion of the curve of the upper surface of a vacuum manifold that applies the vacuum to the bottom surface of the solar cell wafer. Vacuum applied to the bottom surface of the solar cell wafer by the vacuum manifold can be changed along the direction of advancement of the solar cell wafer. For example, the vacuum cell of the vacuum manifold in which the solar cell wafer is subsequently cut It can be the strongest in the area.

The method may include transferring the solar cell wafer along a top surface of a curve of the vacuum manifold with a perforated belt, the vacuum being applied to the bottom surface of the solar cell wafer through perforations of the perforated belt . The perforations should be along the direction of travel of the solar cell wafer so that the leading and trailing edges of the solar cell wafer are placed on at least one of the perforations in the belt, It can be selectively arranged to be pulled toward the surface of the curve, but this is not required.

The method includes advancing the solar cell wafer along a flat area of the upper surface of the vacuum manifold to reach a transition region of the curve of the upper surface of the vacuum manifold having a first curvature, And advancing the solar cell wafer into a cut region of the upper surface of the vacuum manifold to be subsequently cut, wherein the cut region of the vacuum manifold has a second curvature that is abruptly greater than the first curvature. The method may further include advancing the cut solar cells into a post-cut region of the vacuum manifold having a third curvature that is abruptly greater than the curvature.

In any of the above variants, the method comprises the steps of forming a single cleaving crack along each scribe line and providing an asymmetric stress distribution along each scribe line to promote propagation, And further applying a stronger vacuum between one end of each scribe line and the surface of the solar cell wafer and the curve. Optionally or additionally, in any of the above variants, the method is characterized in that for each scribe line, the scribe lines on the solar cell wafer are moved to the vacuum of the vacuum manifold so that one end reaches the cut- And orienting at an angle to the manifold.

In any of these variations, the method may include removing the cut solar cells from the surface of the curve before the edges of the cut solar cells are contacted. For example, the method may include removing the cells in a direction that is tangential or approximately tangential to the surface of the curve of the manifold at a rate greater than the rate of advance of the cells along the manifold . This can be implemented, for example, with a moving belt arranged in a tangent line or any other suitable mechanism.

In any of the above variations, the method further comprises scribing the scribe lines onto the solar cell wafer, and removing the scribe lines from the upper or lower surface of the solar cell wafer prior to cutting the solar cell wafer along the scribe lines. And applying an electrically conductive adhesive bonding material to the portions. Each resulting cut solar cell may then comprise a portion of the electrically conductive adhesive bond material disposed along the cut edge of the top or bottom surface thereof. The scribe lines may be formed before and after the electrically conductive adhesive bond material is applied using any suitable scribing method. The scribe lines may be formed, for example, by laser scribing.

In any of these variations, the solar cell wafer may be a square or pseudo-square silicon solar cell wafer.

In another aspect, a method of fabricating a string of solar cells includes forming a plurality of rectangular solar cells in series with long sides of adjacent rectangular solar cells overlapping in a shingled manner by an electrically conductive adhesive bond And curing the electrically conductive bonding material to couple adjacent and overlapping rectangular solar cells together and connecting them electrically in series. The solar cells may be manufactured by any of the variants of the method for manufacturing the solar cells described above, for example.

In one aspect, a method of making a string of solar cells comprises forming a back metallization pattern on each of one or more square solar cells, and forming a back metallization pattern on each of the one or more square solar cells And stencil printing the entire front metallization pattern using a single stencil in a single stencil printing step. These steps may be performed in any order, and may be performed concurrently if appropriate. &Quot; Complete front metallization pattern " means that no additional metallization material needs to be deposited on the front of the square solar cell to complete the formation of the front metallization after the stencil printing step. The method may also include providing each square solar cell with two or more rectangular solar cells to form a plurality of rectangular solar cells each having a complete front metallization pattern and a rear metallization pattern from the one or more square solar cells. Separating the plurality of rectangular solar cells into long sides of adjacent rectangular solar cells overlapping each other in a shingled manner, and arranging the plurality of rectangular solar cells And electrically connecting the rectangular solar cells in the pair to an electrically conductive bonding material disposed therebetween to electrically couple one front metallization pattern of the rectangular solar cells in the pair to the rectangular solar cells in the pair Electricity on the other rear metallization pattern By connecting to, and a step of electrically connecting in series the solar cells of the plurality of rectangles.

Wherein the stencil is configured such that all portions of the stencil defining one or more features of the front metallization pattern on the one or more square solar cells are disposed on other portions of the stencil such that they are within the plane of the stencil during stencil printing Lt; RTI ID = 0.0 > physical connections.

The front metallization pattern on each rectangular solar cell may comprise, for example, a plurality of fingers oriented orthogonally to the long sides of the rectangular solar cell, the fingers in the front metallization pattern Are not physically connected to each other by the front metallization pattern.

In this specification, for example, solar cells having reduced charge recombination losses at the edges of the solar cell without cut edges that promote carrier recombination, methods for fabricating such solar cells, The use of such solar cells with shingled (overlapping) arrangements to form cells is disclosed.

In one aspect, a method of fabricating a plurality of solar cells includes depositing one or more front amorphous silicon layers on a front side of a crystalline silicon wafer, depositing one or more front amorphous silicon layers on the opposite side of the crystalline silicon wafer Depositing one or more rear amorphous silicon layers on the backside of the wafer to form one or more front trenches in the one or more front amorphous silicon layers, Depositing a passivating layer over the one or more front amorphous silicon layers and the front trenches, depositing a passivating layer within the one or more rear amorphous silicon layers, Rear trenches To a step, and the step of depositing a passivation rear bay tingcheung within the one or more of the back of an amorphous silicon layer and the rear trench patterning said one or more back-Si layer. Each of said one or more rear trenches being formed in line with a corresponding one of said front trenches. The method further comprises cutting the crystalline silicon wafer at one or more of the cutting planes, wherein each cutting plane is centered or substantially centered on the other pair of corresponding front and back trenches. In the operation of the resulting solar cells, the front amorphous silicon layers are illuminated with light.

In some variations, only the front trenches are formed, and the backside trenches are not formed. In other variations, only the rear trenches are formed, and the front trenches are not formed.

The method includes forming the one or more front trenches through the front amorphous silicon layer to reach the front of the crystalline silicon wafer and / or forming the one or more rear amorphous silicon layers to reach the rear surface of the crystalline silicon wafer. Forming the one or more backside trenches through the silicon layers.

The method may include forming the front passivating layer with a transparent conductive oxide and / or forming the rear passivating layer.

A pulsed laser or diamond tip can be used to initiate the cutting point (e.g., a size of 100 microns in length). The CW laser and cooling nozzles can be used to guide high compressive and tensile thermal stresses in succession and direct complete cut propagation in the crystalline silicon wafer to separate the crystalline silicon wafer from the one or more cutting planes . Optionally, the crystalline silicon wafer may be mechanically cut at the one or more cutting planes. Any suitable cutting methods may be used.

The one or more front amorphous crystalline silicon layers may form an n-p junction with the crystalline silicon wafer, and in this case, it may be desirable to sever the crystalline silicon wafer from its backside. Optionally, the one or more rear amorphous crystalline silicon layers may form an n-p junction with the crystalline silicon wafer, and in this case, it may be desirable to sever the crystalline silicon wafer from its front side.

In another aspect, a method of fabricating a plurality of solar cells includes forming one or more trenches within a first surface of a crystalline silicon wafer, forming one or more amorphous silicon layers on the first surface of the crystalline silicon wafer Depositing a passivating layer within the trenches and on the one or more amorphous silicon layers on the first surface of the crystalline silicon wafer, depositing a passivating layer on the opposite surface of the crystalline silicon wafer from the first surface Depositing one or more amorphous silicon layers on a second surface of the crystalline silicon wafer on a side and cutting the crystalline silicon wafer in one or more of the cutting planes, On one or more of the one or more trenches Plant leave substantially centered.

The method may comprise forming the passivating layer with a transparent conductive oxide.

A laser may be used to induce thermal stress within the crystalline silicon wafer to cause the crystalline silicon wafer to cut at the one or more cutting planes. Optionally, the crystalline silicon wafer may be mechanically cut at the one or more cutting planes. Any suitable cutting method may be used.

The one or more front amorphous crystalline silicon layers may form an n-p junction with the crystalline silicon wafer. Optionally, the one or more rear amorphous crystalline silicon layers may form an n-p junction with the crystalline silicon wafer.

In another aspect, the solar cell plate includes a plurality of supersells, each supersell is arranged in line with the ends of adjacent solar cells superimposed in a shingled manner so as to electrically connect the solar cells in series and electrically connected to each other And a plurality of solar cells arranged. Each solar cell comprising: a crystalline silicon base; one or more first surface amorphous silicon layers disposed on a first surface of the crystalline silicon base to form an np junction; One or more second surface amorphous silicon layers disposed on a second surface of the crystalline silicon base on a side and edges of the first surface amorphous silicon layers, edges of the second surface amorphous silicon layers, or And passivating layers to prevent charge recombination at edges of the first surface amorphous silicon layers and at edges of the second surface amorphous silicon layers. The passivating layers may comprise a transparent conductive oxide.

The solar cells may be formed, for example, by any of the methods summarized above or disclosed herein.

These and other embodiments, features and advantages of the present invention will become more apparent to those skilled in the art from the following detailed description of the invention when taken in conjunction with the accompanying drawings, which are briefly described first.

FIG. 1 shows a cross-sectional view of a string of series-connected solar cells arranged in a shingled manner with end portions of adjacent solar cells overlapping to form a shunged super cell.
Figure 2a shows a diagram of a front (solar side) and front metallization pattern of an exemplary rectangular solar cell that can be used to form shunged super cells.
Figures 2B and 2C show drawings of frontal (solar side) and front metallization patterns of two exemplary rectangular solar cells with rounded corners that can be used to form shingled supercells.
Figures 2d and 2e illustrate views of back and exemplary back metallization patterns for the solar cell shown in Figure 2a.
Figs. 2F and 2G show the back faces and exemplary back metallization patterns for the solar cells shown in Figs. 2B and 2C, respectively.
Figure 2h shows a diagram of the front (solar side) and front metallization pattern of another exemplary rectangular solar cell that can be used to form the shunged super cells. The front metallization pattern includes separate contact pads each of which is surrounded by a barrier configured to prevent un-cured conductive adhesive bonding material deposited on the contact pad from falling off the contact pad .
Figure 2i shows a cross-sectional view of the solar cell of Figure 2h and identifies the details of the front metallization pattern shown in the enlarged view of Figures 2j and 2k, including contact pads and portions of the barrier surrounding the contact pads .
Figure 2j shows an enlarged view of the details from Figure 2i.
Figure 2K shows an enlarged view of the details of Figure 2i with a non-cured conductive adhesive bond material substantially constrained by the barrier to the location of the separate contact pads.
FIG. 21 shows a view of the rear and exemplary back metallization pattern for the solar cell of FIG. 2h. The back metallization pattern includes separate contact pads each of which is surrounded by a barrier configured to prevent un-cured conductive adhesive bonding material deposited on the contact pad from falling off the contact pad .
Figure 2m shows a cross-sectional view of the solar cell of Figure 2l and identifies the details of the back metallization pattern shown in the enlarged view of Figure 2n, which includes a contact pad and a barrier surrounding the contact pad.
Figure 2n shows an enlarged view of the details from Figure 2m.
Figure 2O shows another variation of the metallization pattern that includes a barrier configured to prevent un-cured conductive adhesive bonding material from flowing away from the contact pad. The barrier is adjacent to one side of the contact pad and larger than the contact pad.
Figure 2P shows another variation of the metallization pattern of Figure 2O with a barrier adjacent at least two sides of the contact pad.
Figure 2q shows a view of the back and exemplary back metallization pattern for another exemplary rectangular solar cell. The rear metallization pattern comprises successive contact pads that substantially follow the length of the long side of the solar cell along the edge of the solar cell. The contact pad is surrounded by a barrier configured to prevent un-cured conductive adhesive bonding material deposited on the contact pad from flowing away from the contact pad.
Figure 2r shows a diagram of the front (solar side) and front metallization pattern of another exemplary rectangular solar cell that can be used to form the shunged super cells. The front metallization pattern includes discrete contact pads arranged in rows along the edge of the solar cell and a long thin conductor parallel to the rows of contact pads and traveling inward from the substrate therefrom. The long thin conductor forms a barrier configured to prevent un-cured conductive adhesive bonding material deposited on the contact pads from falling off the contact pads and flowing onto the active area of the solar cell.
Figure 3a shows that pseudo-square silicon solar cells of standard size and shape can be separated (e.g., cut or shredded) into rectangular solar cells of two different lengths that can be used to form shunged super cells Figure 2 illustrates a diagram illustrating an exemplary method.
Figures 3B and 3C show diagrams illustrating other exemplary methods by which pseudo-square silicon solar cells can be separated into rectangular solar cells. Figure 3B shows a front view of the wafer and an exemplary front metallization pattern. Figure 3c shows the backside and exemplary back metallization pattern of the wafer.
Figures 3D and 3E show diagrams illustrating an exemplary method in which a square silicon solar cell can be separated into rectangular solar cells. Figure 3D shows a front view of the wafer and an exemplary front metallization pattern. Figure 3E shows the backside and exemplary back metallization pattern of the wafer.
FIG. 4A shows a partial view of a front surface of an exemplary rectangular supercell including, for example, rectangular solar cells as shown in FIG. 2A, arranged in a shingled manner as shown in FIG.
Figs. 4B and 4C are cross-sectional views of an exemplary rectangular < RTI ID = 0.0 > (rectangular) < / RTI > array of solar cells arranged in a shingled manner as shown in Fig. 1, for example " chevron " rectangular cells with chamfered edges as shown in Fig. A front view and a rear view of the super cell are respectively shown.
Figure 5a shows a view of an exemplary rectangular photovoltaic module comprising a plurality of rectangular shingled supercells with the long side of each supercell having a length that is approximately half the length of the short sides of the module. The pairs of super cells are arranged end to end to form rows having long sides of the super cells parallel to short sides of the module.
Figure 5b shows a view of another exemplary rectangular photovoltaic module comprising a plurality of rectangular shingled supercells, the long sides of each supercell having approximately the same length of the short sides of the module. The supercells are arranged with their long sides parallel to the short sides of the module.
Figure 5c shows a diagram of another exemplary rectangular photovoltaic module comprising a plurality of rectangular shingled supercells, the long side of each supercell having a length approximately equal to the length of the long side of the module. The supercells are arranged with their long sides parallel to the sides of the module.
Figure 5d shows a view of an exemplary rectangular photovoltaic module comprising a plurality of rectangular shingled supercells with the long side of each supercell having a length that is approximately half the length of the long sides of the module. The pairs of super cells are arranged end to end to form rows having long sides of the super cells parallel to the long sides of the module.
Figure 5e shows a diagram of another exemplary rectangular photovoltaic module that is similar in configuration to that of Figure 5c wherein all the solar cells in which the supercells are formed are arranged such that the corners of pseudo-square wafers Lt; RTI ID = 0.0 > chamfered < / RTI >
Figure 5f shows a view of another exemplary rectangular photovoltaic module similar in configuration to that of Figure 5c wherein all the solar cells in which the supercells are formed are arranged to regenerate the shapes of the pseudo-square wafers from which they were separated Lt; RTI ID = 0.0 > solar cells. ≪ / RTI >
FIG. 5G shows another exemplary rectangular photovoltaic module similar in configuration to the case of FIG. 5E, except that adjacent Chevron solar cells in the supercell are arranged in mirror images with each other such that their overlapping edges are the same length Respectively.
Figure 6 shows an exemplary arrangement of three rows of supercells interconnected by flexible electrical interconnects with the supercells in series with each other in each column and with the columns in parallel with each other. These may be, for example, three columns in the solar module of Figure 5d.
Figure 7A illustrates exemplary flexible interconnects that may be used to interconnect supercells in series or parallel. Some examples illustrate patterning to follow their long axes, along their short axes, or to increase their flexibility (mechanical compliance) along their long axes and their short axes. FIG. 7A illustrates exemplary stress relieving long interconnect configurations that may be used as interconnects for the front or rear super cell terminal contacts in hidden taps for the super cells as described herein. Figures 7B-1 and 7B-2 illustrate examples of out-of-plane stress relief features. Figures 7b-1 and 7b-2 illustrate exemplary long interconnect configurations that include out-of-plane stress relief features and may be used as interconnects to hidden taps for super cells or for front or rear super cell terminal contacts .
FIG. 8A shows detail A from FIG. 5D and is a cross-sectional view of the exemplary solar module of FIG. 5D showing cross-sectional details of the flexible electrical interconnects coupled to the backside terminal contacts of rows of supercells.
Figure 8B shows a detail C from Figure 5D and shows a cross-sectional view of the exemplary solar module of Figure 5D showing cross-sectional details of flexible electrical interconnects coupled to front (sun side) terminal contacts of columns of supersells to be.
FIG. 8C is a cross-sectional view of the exemplary solar module of FIG. 5D showing the cross-sectional details of the flexible interconnects arranged to interconnect the supercells in columns in series, showing detail D from FIG. 5D.
8D-8G show additional examples of electrical interconnects coupled to the front-terminal contact of the supercell at the end of the row of supercells adjacent the edge of the solar module. The exemplary interconnects are configured to have a small footprint on the front of the module.
Figure 9a shows drawings of another exemplary square photovoltaic module comprising six rectangular shingled supercells, the long side of each supercell having a length approximately equal to the length of the long side of the module. The supercells are arranged in six columns electrically connected in parallel to each other and electrically connected in parallel with a bypass diode disposed in a junction box on the back surface of the solar module. Electrical connections between the supercells and the bypass diode are made through ribbons embedded in the laminate structure of the module.
Figure 9b shows a view of another exemplary rectangular photovoltaic module comprising six rectangular shingled supercells with the long side of each supercell having a length approximately equal to the length of the long side of the module. The supercells are arranged in six rows electrically connected in parallel to each other and electrically connected in parallel with a bypass diode disposed in the junction box on the rear surface in the vicinity of the edge of the solar module. The second junction box is located on the rear surface near the opposite end of the solar module. The electrical connections between the supercells and the bypass diode are made through an external cable between the junction boxes.
Figure 9c shows an exemplary glass-glass rectangular photovoltaic module comprising six rectangular shingled supercells, the long side of each supercell having a length approximately equal to the length of the long side of the module. The super cells are arranged in six columns electrically connected in parallel. Two junction boxes are mounted on opposing edges of the module to maximize the active area of the module.
FIG. 9D is a side view of the solar module illustrated in FIG. 9C. FIG.
Figure 9E shows another exemplary solar module comprising six rectangular shingled supercells, each supercell having a length approximately equal to the length of the long side of the module. The supersells are arranged in six columns, including three pairs of columns that are individually connected to a power management device on the solar module.
9F shows another exemplary photovoltaic module comprising six rectangular shingled supercells, the long side of each supercell having a length approximately equal to the length of the long side of the module. The supercells are arranged in six columns, each row being individually connected to a power management device on the solar module.
Figures 9G and 9H illustrate other examples of configurations for module level power management using shingled super cells.
Figure 10a shows an exemplary schematic electrical circuit diagram for a solar module as illustrated in Figure 5b.
FIGS. 10B-1 and 10B-2 illustrate exemplary physical layouts for various electrical interconnections for a photovoltaic module as illustrated in FIG. 5B with the schematic circuit diagram of FIG. 10A.
Figure 11A shows an exemplary schematic electrical circuit diagram of a solar module as illustrated in Figure 5A.
11B-1 and 11B-2 illustrate exemplary physical layouts for various electrical interconnections for a solar module as illustrated in FIG. 5A with the schematic electrical schematic of FIG. 11A.
11C-1 and 11C-2 illustrate another exemplary physical layout for various electrical interconnections for a solar module as illustrated in FIG. 5A with the schematic electrical schematic of FIG. 11A.
Figure 12A shows another exemplary schematic electrical circuit diagram for a solar module as illustrated in Figure 5A.
Figures 12b-1 and 12b-2 illustrate exemplary physical layouts for various electrical interconnections for a solar module as illustrated in Figure 5a with the schematic circuit diagram of Figure 12a.
12C-1, 12C-2, and 12C-3 illustrate another exemplary physical layout for various electrical interconnects for a solar module as illustrated in FIG. 5A with the schematic circuit diagram of FIG. 12A .
FIG. 13A shows another exemplary schematic circuit diagram for a solar module as illustrated in FIG. 5A.
Figure 13b shows another exemplary schematic circuit diagram for a solar module as illustrated in Figure 5b.
Figures 13c-1 and 13c-2 illustrate exemplary physical layouts for various electrical interconnections for a solar module as illustrated in Figure 5a with the schematic circuit diagram of Figure 13a. The physical layout of Figures 13c-1 and 13c-2, which is slightly modified, is suitable for a solar module as illustrated in Figure 5b with the schematic circuit diagram of Figure 13b.
14A shows a diagram of another exemplary rectangular photovoltaic module comprising a plurality of rectangular shingled supercells, wherein the long side of each supercell has a length approximately equal to half the length of the short side of the module I have. The pairs of super cells are arranged end to end to form rows having long sides of the super cells parallel to the short side of the module.
Fig. 14B shows an exemplary schematic circuit diagram for a solar module as illustrated in Fig. 14A.
Figs. 14C-1 and 14C-2 illustrate exemplary physical layouts for various electrical interconnections for a solar module as illustrated in Fig. 14A with the schematic circuit diagram of Fig. 14B.
Fig. 15 shows another exemplary physical layout for various electrical interconnections for a solar module as illustrated in Fig. 5B with the schematic circuit diagram of Fig. 10a.
Figure 16 shows an exemplary arrangement of smart switches interconnecting two solar modules in series.
Figure 17 shows a flow diagram of an exemplary method of making a solar module with super cells.
Figure 18 shows a flow diagram of another exemplary method of making a solar module with super cells.
Figs. 19A-19D illustrate exemplary arrangements in which super cells can be cured by heat and pressure.
20A-20C schematically illustrate exemplary devices that can be used to sever scribed solar cells. The device may be particularly advantageous when it is used to cut scribed supercells to which a conductive adhesive bond material has been applied.
Figure 21 shows an example with dark lines that can be used in photovoltaic modules including parallel rows of supersells to reduce the visible contrast between supercells and portions of the backsheet visible from the front of the module White backsheet " zebra striped ".
Figure 22A shows a top view of a conventional module utilizing conventional ribbon connections under hot spot conditions. 22B also shows a top view of the module utilizing thermal diffusions according to embodiments under hot spot conditions.
Figures 23A-23B illustrate examples of super cell string layouts with chamfered cells.
24-25 illustrate simplified cross-sectional views of arrays including a plurality of modules assembled with shingled arrangements.
Figure 26 shows a diagram of a back side (light shield) of a solar module illustrating an exemplary electrical interconnection of front (sun side) terminal electrical contacts of a shingled supercell to a junction box on the back side of the module.
27 shows diagrams of the back side (shading) of a solar module illustrating exemplary electrical interconnection of two or more shingled supercells in parallel, wherein the front (sun side) terminal electrical contacts of the supercells are connected to each other And to a junction box on the back side of the module.
Figure 28 shows a diagram of the back side (light shielding) of a solar module illustrating another exemplary electrical interconnection of two or more shingled supercells in parallel, wherein the front (solar side) terminal electrical contacts of the super cells To each other and to a junction box on the back side of the module.
Figure 29 is a partial cross-sectional and perspective view of two supercells illustrating the use of a flexible interconnect between the overlapping ends of adjacent supercells to electrically connect the supercells in series and provide an electrical connection to the junction box. / RTI >
29A shows an enlarged view of the area of interest of FIG. 29. FIG.
30A illustrates an exemplary supercell having electrical interconnects coupled to its front and back terminal contacts. Figure 30B shows two of the supersells of Figure 30A that are connected in parallel.
Figures 31A-31C illustrate illustrations of exemplary back metallization patterns that may be employed to create hidden taps in supercells as described herein.
FIGS. 32-33 illustrate examples of the use of hidden taps with interconnects that progress approximately through the full width of the supercell.
Figs. 34A-34C illustrate examples of interconnects that are coupled to the supercell backplane (Fig. 34A) and front (Figs. 34B-34C) terminal contacts.
35-36 illustrate examples of the use of hidden taps with short interconnects that cross the gaps between adjacent super cells but do not substantially extend inward along the long axis of the rectangular solar cells.
Figures 37A-1 through 37F-3 illustrate exemplary configurations for short hidden tab interconnects including in-plane stress relief features.
38A-1 through 38B-2 illustrate exemplary configurations for short hidden tab interconnects including out-of-plane stress relief features.
Figures 39A-1 and 39A-2 illustrate exemplary configurations for short hidden tab interconnects including alignment features. Figures 39b-1 and 39b-2 illustrate an exemplary configuration for short hidden tab interconnects having unsymmetrical tap lengths.
Figs. 40 and 42A-44B illustrate exemplary solar module layouts employing hidden taps.
41 shows an exemplary electrical circuit diagram for the solar module layouts of Figs. 40 and 42A-44B.
Figure 45 shows the current flow in an exemplary solar module with a bypass diode in a conducting state.
Figs. 46A-46B illustrate the relative motion between the solar module components resulting from a thermal cycle in a direction parallel to the columns of supersells and in a direction orthogonal to the columns of supersells in the photovoltaic module.
47A-47B illustrate another exemplary solar module layout and corresponding electrical circuit diagram, each employing hidden taps.
48A-48B illustrate additional solar cell module layouts incorporating hidden bypass taps combined with embedded bypass diodes.
49A-49B show block diagrams for a high voltage solar module as described herein, which provide a high DC voltage to the photovoltaic modules and microinverters, respectively, providing conventional DC voltage to the microinverter.
Figures 50A-50B illustrate high voltage solar modules including exemplary physical layout and electrical circuit diagrams, e.g., bypass diodes.
Figures 51A-55B illustrate an exemplary configuration for module level power management of high voltage solar modules comprising shingled supercells.
56 illustrates an exemplary arrangement of six supercells in six parallel rows with ends of adjacent rows offset by the flexible electrical interconnects and interconnected in series.
FIG. 57A schematically illustrates a photovoltaic system including a plurality of high DC voltage-shulded solar cell modules connected electrically and in parallel to each other and to a string inverter.
Figure 57b shows the photovoltaic system of Figure 57a disposed on the roof top.
58A-58D can be used to prevent a high DC voltage shunged solar cell module with a short circuit from dissipating significant power generated in other high DC voltage shunged solar cell modules that are electrically connected in parallel Lt; RTI ID = 0.0 > fuses < / RTI > and blocking diodes.
59A-59B illustrate exemplary arrangements in which two or more high DC voltage shunged solar cell modules are electrically connected in parallel within a combiner box, which may include current limiting fuses and blocking diodes.
60A-60B show a plot of current versus voltage versus power vs. voltage for a plurality of high DC voltage shunged solar cell modules, each electrically connected in parallel. The diagrams in Figure 60a are for an exemplary case without modules containing reverse biased solar cells. The diagrams in Figure 60B are for an exemplary case in which some of the modules include one or more reverse biased solar cells.
61A illustrates an example of a photovoltaic module using about one bypass diode per supercell. FIG. 61C illustrates an example of a photovoltaic module using bypass diodes in an inherent configuration. 61B illustrates an exemplary configuration for a bypass diode connected between two neighboring supercells using a flexible electrical interconnect.
Figures 62A-62B schematically illustrate side and top views of different exemplary cutting mechanisms.
63A schematically illustrates the use of an exemplary asymmetric vacuum arrangement for controlling the generation and propagation of cracks along scribe lines when cutting a wafer. Figure 63b schematically illustrates the use of an exemplary symmetric vacuum arrangement that provides less control of cutting in addition to the arrangement of Figure 63a.
Figure 64 schematically illustrates a top view of a portion of an exemplary vacuum manifold that may be used in the cutting mechanism of Figures 62A-62B.
65A and 65B provide schematic illustrations of a top view and a perspective view of the exemplary vacuum manifold of FIG. 64 overlaid by a perforated belt, respectively.
Figure 66 schematically illustrates a side view of an exemplary vacuum manifold that may be used in the cutting mechanism of Figures 62A-62B.
67 schematically illustrates a cut solar cell overlying an exemplary arrangement of perforated belts and vacuum manifolds.
68 schematically illustrates the relative positions and orientations of the cut solar cell in the exemplary cutting process and the uncut portion of the standard size wafer from which the solar cell was cut.
Figures 69A-69G schematically illustrate devices and methods in which cut solar cells can be continuously removed from a cutting mechanism.
Figures 70A-70C provide orthographic views of another variant of the exemplary cutting mechanism of Figures 62A-62B.
Figures 71A and 71B provide perspective views of the exemplary cutting mechanism of Figures 70A-70C in two different stages of the cutting process.
Figs. 72A-74B illustrate details of punched belts and vacuum manifolds of the exemplary cutting mechanism of Figs. 70A-70C.
Figs. 75A-75G illustrate details of some exemplary hole patterns that can be used for perforated vacuum belts in the exemplary cutting mechanism of Figs. 10A-10C.
76 shows an exemplary front metallization pattern on a rectangular solar cell.
77A-77B illustrate exemplary back metallization patterns on rectangular solar cells.
78 illustrates an exemplary front metallization pattern on a square solar cell that can be diced to form a plurality of rectangular solar cells, each having the front metallization pattern shown in FIG. 76. FIG.
Figure 79 illustrates an exemplary back metallization pattern on a square solar cell that can be diced to form a plurality of rectangular solar cells, each having a rear metallization pattern as shown in Figure 77a.
Figure 80 is a schematic illustration of a conventional sized HIT solar cell that is diced into narrow strip solar cells using conventional cutting methods that cause cut edges to promote charge recombination.
81A-81J schematically illustrate steps of an exemplary method of dicing a conventional sized HIT solar cell into narrow solar cell strips lacking cut edges that promote charge recombination.
Figures 82a-82j schematically illustrate the steps of another exemplary method for dicing a conventional sized HIT solar cell into narrow solar cell strips lacking cut edges that promote charge recombination.

The following detailed description should be understood with reference to the drawings, in which like reference numerals refer to like elements throughout the different views. The drawings, which do not necessarily have to scale, illustrate alternative embodiments and are not intended to limit the scope of the invention. The detailed description of the invention illustrates the principles of the invention in the form of an example, not as a limitation. Such description will clearly make the person skilled in the art make and use the invention, and that several embodiments, adjustments, variations, selection of the present invention, including what is currently considered to be the optimum mode of carrying out the invention And uses.

As used in this specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. In addition, the term " parallel " means " parallel or substantially parallel ", and it is understood that rather than requiring that any parallel arrangements described herein be precisely parallel, It is intended to be inclusive. The term " orthogonal " means " orthogonal or substantially orthogonal " and is intended to encompass minor deviations from orthogonal geometries rather than requiring that any orthogonal arrangements described herein be precisely orthogonal It is intended. The term " square " means " square or substantially square " and includes square shapes such as chamfered (e.g., rounded or otherwise cut) Is intended to encompass minor deviations from substantially square shapes having edges. The term " rectangular " means " rectangular or substantially rectangular ", and refers to a substantially rectangular shape having chamfered shapes (e.g., rounded or otherwise cut) 0.0 > variations < / RTI >

It will be appreciated that not only the highly efficient shingled arrangements of silicon solar cells in solar cell modules but also the front and rear surfaces for solar cells that can be used in such arrangements, Metallization patterns and interconnects are disclosed. Methods for manufacturing such solar modules are also disclosed herein. The solar cell modules may be advantageously employed under " one sun " (decentralized) illumination and may have physical dimensions and electrical characteristics that allow them to replace conventional silicon solar cell modules.

1 is a cross-sectional view of a solar cell 10 connected in series in a shingled manner with ends of adjacent solar cells being overlapped and electrically connected to form a super cell 100 Figure 5 shows a cross section of a string. Each solar cell 10 has electrical contacts for the semiconductor diode structure due to the current generated in the solar cell 10, which can be provided to an external load when illuminated by light, .

In the examples described herein, each solar cell 10 includes a front (sun side) and rear (shaded side) metal (not shown) that provides electrical contacts to opposite sides of the np junction Wherein the front metallization pattern is disposed on an n-type conductive semiconductor layer, and the rear metal back pattern is disposed on a p-type conductive semiconductor layer. However, any other suitable solar cells employing any other suitable material system, diode structure, physical dimensions, or electrical contact arrangement may be used in place of or in addition to the solar cells 10 in the solar modules described herein Can be used. For example, the front (sun side) metallization pattern may be disposed on a p-type conductive semiconductor layer, and the rear (light shielding) metallization pattern may be disposed on an n-type conductive semiconductor layer .

Referring back to FIG. 1, the adjacent solar cells 10 in the supercell 100 are electrically connected to each other to electrically connect the front metallization pattern of one solar cell to the back metallization pattern of the adjacent solar cell And are electroconductively coupled to each other within the overlapping region by the adult bonding material. Suitable electrically conductive conductive bonding materials may include, for example, electrically conductive adhesives and electrically conductive adhesive films and adhesive tapes, and conventional solders. Preferably, the electrically conductive bonding material is capable of accepting stresses resulting from a mismatch between the coefficient of thermal expansion (CTE) of the electrically conductive bonding material and the coefficient of thermal expansion of the solar cells (e.g., CTE of silicon) To provide mechanical compliance to the coupling between adjacent solar cells. To provide this mechanical compliance, in some variations the electrically conductive coupling material is selected to have a glass transition temperature of less than or equal to about 0 ° C. In order to further reduce and accommodate the stresses parallel to the overlapping edges of the solar cells resulting from CTE mismatches, the electrically conductive binding material optionally has a continuous line extending substantially the length of the edges of the solar cells Lt; RTI ID = 0.0 > solar cell < / RTI >

The thickness of the electrically conductive layer between adjacent and overlapping solar cells formed by the electrically conductive bonding material and measured orthogonally to the front and back surfaces of the solar cells is, for example, about 0.1 mm or less . This thin coupling reduces the resistive loss in the interconnection between the cells and also reduces the thermal resistance of the cell from any hot spot in the supercell that can develop during operation. Increase flow. The thermal conductivity of the bond between the solar cells may be, for example, about 1.5 watts / (meter-K).

2A shows a front view of an exemplary rectangular solar cell 10 that may be used in the supercell 100. Fig. Other shapes for the solar cell 10 may also be suitably used. In the illustrated example, the front metallization pattern of the solar cell 10 is located adjacent one edge of the long sides of the solar cell 10, and substantially parallel to the long side < RTI ID = 0.0 > (15) orthogonal to the bus bars (15) and parallel to each other for substantially the length of short sides and to the short sides of the solar cell (10) And fingers 20 proceeding in parallel with each other.

In the example of FIG. 2A, the solar cell 10 has a length of about 156 mm, a width of about 26 mm, and an aspect ratio (length of short side / length of long side) of about 1: 6. Six such solar cells can be fabricated on a standard 156 mm x 156 mm silicon wafer and can be diced to provide solar cells as illustrated below. In other variations, Eight solar cells 10 having dimensions of about 19.5 mm x 156 mm and thus an aspect ratio of about 1: 8 can be fabricated from standard silicon wafers. More generally, For example, from about 1: 2 to about 1: 20, and may be manufactured from standard size wafers or from wafers of any other suitable dimensions.

Figure 3a illustrates a pseudo-square silicon solar cell wafer 45 of standard size and shape that can be cut, broken, or otherwise separated to form rectangular solar cells as described above. An exemplary method is shown. In this example, some full width rectangular solar cells 10L are cut from the center of the wafer, and additionally several shorter rectangular solar cells 10S are cut from the ends of the wafer, Chamfered or rounded corners are discarded. The solar cells 10L may be used to form shingled supercells of one width and the solar cells 10S may be used to form shingle super cells of narrower width.

Alternatively, the chamfered (e. G., Rounded) corners may be held on the solar cells being cut from the ends of the wafer. 2B-2C are similar to the case of FIG. 2A, but show an exemplary " chevron " rectangular solar cells 10 with chamfered edges held from the wafer from which the solar cells were cut Respectively. In Fig. 2B, the bus bar 15 is substantially parallel to and progressively adjacent to the shorter of the two long sides for the length of the side, and at least partially covers both ends of the solar cell ' s chamfered edges Lt; / RTI > In Fig. 2C, the bus bar 15 is positioned adjacent and parallel to the longer of the two long sides for substantially the length of the side. FIGS. 3B-3C illustrate a plurality of solar cells 10 having frontal metallization patterns similar to those shown in FIG. 2A and two chamfered solar cells 10 having frontal metallization patterns similar to the case shown in FIG. 3 shows a front view and a rear view of a pseudo square wafer 45 that can be diced along the dashed lines shown in FIG.

In the exemplary frontal metallization pattern shown in FIG. 2B, the two ends of the bus bar 15, which extend around the chamfered edges of the cell, are each positioned adjacent to the long side of the cell, And may have a width (tapering) tapering to an increased distance from the portion. Similarly, in the exemplary frontal metallization pattern shown in FIG. 3B, the two ends of a thin conductor interconnecting separate contact pads 15 are connected to the chamfered edges of the solar cell And tapers to an increased distance from the long side of the solar cell over which the separate contact pads are arranged. While such tapering is optional, it may advantageously reduce the use of the metal and the shading of the active area of the solar cell without significantly increasing resistive losses.

Figures 3D-3E illustrate a complete square wafer 47 that can be diced along the dashed lines shown in Figure 3E to provide a plurality of solar cells 10 having front metallization patterns similar to those shown in Figure 2A. Fig. 3 is a front view and a rear view of Fig.

The chamfered rectangular solar cells can be used to form supercells containing only chamfered solar cells. Additionally or alternatively, one or more of these chamfered rectangular solar cells may be used in combination with one or more non-chamfered rectangular solar cells (e.g., FIG. 2A) to form a supercell have. For example, the end solar cells of the supercell can be chamfered solar cells, and the middle solar cells can be chamfered solar cells. When chamfered solar cells are used in combination with solar cells that are not chamfered in a supercell or more generally in a photovoltaic module, the chamfered < RTI ID = 0.0 > and / or < It may be desirable to use the dimensions for the solar cells to result in non-chamfered solar cells. Matching the solar cell areas in this manner matches currents generated within the chamfered and chamfered solar cells, which includes both chamfered and non-chamfered solar cells Improves the performance of cascaded strings. The area of chamfered and chamfered solar cells that are cut from wafers of the same pseudo-square can be determined, for example, to compensate for missing edges on the chamfered photovoltaic cells in a direction orthogonal to their long axes, The wafer can be matched by adjusting the positions of the lines where the wafer is diced so that the processed solar cells are slightly wider than the non-chamfered solar cells.

The photovoltaic module may include only super cells formed from un-chamfered rectangular solar cells, or may include only super cells formed from chamfered rectangular solar cells, or chamfered and / But may include only super cells with non-chamfered solar cells, or may include any combination of these three variations of supercells.

In some examples, portions of a standard sized square or pseudo-square solar cell wafer (e.g., wafer 45 or wafer 47) near the edges of the wafer may be part of the wafer located away from the edges It is possible to convert the light into electricity with a lower efficiency than that of the light. In order to improve the efficiency of the resulting rectangular solar cells, in some variations one or more of the wafers are trimmed to remove lower efficiency portions before the wafer is diced. The portions that are trimmed from the edges of the wafer may have widths of, for example, from about 1 mm to about 5 mm. Further, as shown in FIGS. 3B and 3D, the two end solar cells 10 diced from the wafer follow their outer edges, and thus along two of the edges of the wafer, (or separate contact pads) 15, as shown in FIG. Because the bus bars (or separate contact pads) 15 in the supercells described herein are typically superimposed by adjacent solar cells, the low photoconversion efficiency along these two edges of the wafer is typically less than It does not affect the performance of solar cells. Thus, in some variations, the edges of a square or pseudo-square wafer oriented parallel to the short sides of the rectangular solar cells are trimmed as described above, but oriented in parallel to the long sides of the rectangular solar cells The edges of the wafer that are not. In other variations, one, two, three, or four edges of a square wafer (e.g., wafer 47 in FIG. 3D) are trimmed as described above. In other variations, one, two, three, or four of the long edges of the pseudo-square wafer are trimmed as described above.

Solar cells having a long narrow aspect ratio and smaller areas than in the case of a standard 156 mm x 156 mm solar cell are advantageously employed to reduce I ² R resistive power losses in the solar cell modules described herein as illustrated . In particular, the reduced area of the solar cells 10 compared to silicon solar cells of the standard size reduces the current generated in the solar cell, thereby reducing the resistive output loss in the solar cell and the series- Direct reduction. Arranging these rectangular solar cells in the supercell 100 so that current flows through the supercell in parallel to the short sides of the solar cells also causes current to reach the fingers 20 in the front metallization pattern To reduce the required length of the fingers, which in turn can reduce the resistive output loss.

As described above, combining the solar cells 10 superimposed in their overlapping regions to connect the solar cells in series is advantageous in that the number of adjacent solar cells 10 adjacent to the tabbed series- Thereby reducing the length of the electrical connection between the solar cells. This also reduces resistive output losses.

2A, in the illustrated example, the front metallization pattern on the solar cell 10 includes an optional bypass conductor 40 that is parallel to and spaced from the bus bar 15 (Such a bypass conductor may also be used selectively with the metallization patterns shown in FIGS. 2B-2C, 3B and 3D and may also be combined with separate contact pads 15 rather than a continuous bus bar 2q). The bypass conductor 40 interconnects the fingers 20 to electrically bypass the cracks that may form between the bus bar 15 and the bypass conductor 40. These cracks, which can cut the fingers 20 at locations near the bus bar 15, are otherwise able to separate areas of the solar cell 10 from the bus bar 15. The bypass conductor provides an optional electrical path between the broken fingers and the bus bar. An illustrative example shows a bypass conductor 40 positioned parallel to bus bar 15 and extending approximately the entire length of the bus bar, interconnecting all fingers 20. [ While this arrangement may be desirable, it is not required. If present, the bypass conductor need not run parallel to the bus bar, and need not extend to the full length of the bus bar. Also, the bypass conductor interconnects at least two fingers, but not all fingers. Two or more short bypass conductors may be used instead of, for example, longer bypass conductors. Any suitable arrangement of bypass conductors may be used. The use of such bypass conductors is described in U.S. Patent Application No. 13 / 371,790, filed on February 13, 2012, the disclosure of which is incorporated herein by reference, &Quot; Solar Cell With Metallization Compensating For Or Preventing Cracking ").

2a also includes an optional end conductor 42 interconnecting the fingers 20 at their distal ends opposite from the bus bar 15 And may optionally be used for the metallization patterns shown in Figures 2B-2C, 3B and 3D and 2Q). The width of the conductor 42 may be approximately the same as the width of the finger 20, for example. The conductor 42 interconnects the fingers 20 to electrically bypass the cracks that may form between the bypass conductor 40 and the conductor 42 and thus electrically disconnects And provides a current path to the bus bar 15 for areas of the solar cell 10 that can be used.

Although some of the illustrated examples show the front bus bar 15 with a uniform width extending substantially the length of the long sides of the solar cell 10, this is not required. For example, as indicated above, the front bus bars 15 may be arranged along the side of the solar cell 10, for example, as shown in Figures 2h, 2q and 3b, Can be replaced by separate contact pads 15 on two or more front sides. These separate contact pads may be selectively interconnected by thinner conductors that run therebetween, for example, as shown in the aforementioned figures. In these variations, the width of the contact pads measured orthogonally to the long side of the solar cell may be, for example, about two to about twenty times the width of the thin conductors interconnecting the contact pads. There may be separate (e.g., small) contact pads for each finger in the front metallization pattern, or each contact pad may be connected to two or more fingers. The front contact pads 15 may be, for example, square or may have a rectangular shape extending parallel to the edge of the solar cell. Front contact pads 15 may be formed, for example, to have a width that is orthogonal to the long side of the solar cell of from about 1 mm to about 1.5 mm, and a width of, for example, about 1 mm to about 10 mm, Can have parallel lengths. The distance between the contact pads 15 measured in parallel to the long side of the solar cell may be, for example, about 3 mm to about 30 mm.

Alternatively, the solar cell 10 may be deficient in both the front bus bar 15 and the separate front contact pads 15, and may include only the fingers 20 in the front metallization pattern. In these variants, the current-collecting functions which could otherwise be performed by the front bus bar 15 or the contact pads 15 are used for the two solar cells 10 in the overlapping configuration described above May be performed instead of, or partially performed by, a conductive material used to bond to each other.

Solar cells with both bus bars 15 and contact pads 15 deficient may include bypass conductors 40 or may not include bypass conductors 40. When no bus bar 15 and contact pads 15 are present, a bypass conductor 40 is formed between the bypass conductor and a portion of the front metallization pattern that is conductively coupled to the overlapping solar cell ≪ / RTI >

The front metallization patterns, including bus bars or separate contact pads 15, fingers 20, bypass conductors 40 (if present) and end conductors 42 (if present) For example, a silver paste, which is conventionally used and deposited for these purposes by conventional screen printing methods. Optionally, the front metallization patterns may be formed from electroplated copper. Any other suitable materials and processes may also be used. In variations where the front metallization pattern is formed of silver, the use of separate front contact pads 15 rather than a bus bar 15 continuing along the edge of the cell reduces the amount of silver on the solar cell , Which advantageously reduces cost. In variants in which the front metallization pattern is formed from copper or other conductors less expensive than silver, the successive bus bars 15 can be employed without costly problems.

Figures 2d-2g, 3c and 3e illustrate exemplary back metallization patterns for a solar cell. In these examples, the rear metallization patterns comprise separate rear contact pads 25 arranged along one of the long edges of the back surface of the solar cell and a metal contact (not shown) covering substantially all of the remaining back surface of the solar cell 30). In the shingled supercell, the contact pads 25 are electrically connected to each other in series by electrically connecting the two solar cells in series, e. G., With separate contact pads (not shown) arranged along the edge of the top surface of the solar cell, Lt; / RTI > For example, each separate rear contact pad 25 may be aligned with a corresponding, separate, front contact pad 15 on the front of the overlapping solar cell, and an electrically conductive May be bound by an adult binding material. The separated contact pads 25 may be, for example, square (Fig. 2d) or may have a rectangular shape extending parallel to the edges of the solar cell (Figs. 2e-2g, 3c, Lt; / RTI > The contact pads 25 may be, for example, parallel to the long sides of the solar cell of about 1 mm to about 5 mm, and to the long sides of the solar cell of, for example, about 1 mm to about 10 mm You can have one length. The distance between the contact pads 25 measured in parallel to the long side of the solar cell may be, for example, about 3 mm to about 30 mm.

The contact 30 may be formed, for example, from aluminum and / or from electroplated copper. The formation of the aluminum back contact 30 typically provides a back surface field that reduces back surface recombination in the solar cell, thereby improving solar cell efficiency. When the contact 30 is formed from copper rather than aluminum, the contact 30 can be used in conjunction with other passivation schemes (e.g., aluminum oxide) to similarly reduce rear recombination. The separate contact pads 25 may be formed, for example, from a silver paste. The use of separate silver contact pads 25 rather than successive silver contact pads along the edge of the cell can reduce the amount of silver in the back metallization pattern, which can advantageously reduce cost.

Also, if the solar cells rely on the back electric field provided by the formation of the aluminum contacts to reduce rear recombination, the use of separate silver contacts rather than successive silver contacts can improve solar cell efficiency. This is because the silver backside contacts do not provide a back electric field, thereby enhancing carrier recombination and creating an insoluble (inactive) volume in the solar cells above the silver contacts. In conventional ribbon-tabbed solar cell strings, these dead volumes are typically obscured by ribbons and / or bus bars on the front surface of the solar cell, No additional losses are incurred. However, in the solar cells and supercells described herein, the volume of the solar cell above the back silver contact pads 25 is typically not masked by any front metallization, Lt; / RTI > reduces the efficiency of the cell. The use of separate silver contact pads 25 rather than successive silver contact pads along the back edge of the solar cell thus reduces the volume of any corresponding insoluble regions and increases the efficiency of the solar cell.

In variations that do not rely on the back field to reduce rear recombination, the back metallization pattern is formed by a plurality of contact pads, such as, for example, as shown in Figure 2q , A continuous bus bar 25 may be employed. The bus bar 25 may be formed of, for example, tin or silver.

Other variations of the rear metallization patterns may employ separate tin contact pads 25. [ Variations of the rear metallization patterns may employ finger contacts similar to those shown in the front metallization patterns of Figs. 2a- 2c, and may lack contact pads and bus bars.

Although the particular exemplary solar cells illustrated in the Figures are described as having certain combinations of front and back metallization patterns, more generally any suitable combination of front and back metallization patterns may be used. For example, one suitable bond may include a silver front metallization pattern comprising separate contact pads 15, fingers 20 and an optional bypass conductor 40, and an aluminum contact 30, A back metallization pattern including silver contact pads 25 may be employed. Another suitable combination is a copper front metallization pattern comprising successive bus bars 15, fingers 20 and an optional bypass conductor 40, and a continuous bus bar 25 and copper contact 30 A back metallization pattern can be employed.

In the supercell manufacturing process (described in more detail below), the electrically-conductive bonding material used to bond adjacent and overlapping solar cells in the supercell is located at the edge of the front or rear surface of the solar cell Separate or contiguous) contact pads, and may not be distributed over the surrounding portions of the solar cell. This reduces the use of materials and can reduce or accommodate the stresses resulting from the CTE mismatch between the electrically conductive binder material and the solar cell as described above. However, during or after deposition and before curing, portions of the electrically conductive bonding material may tend to diffuse over portions of the periphery of the solar cell over the contact pads. For example, the bonding portion of the electrically conductive bonding material may be pulled out of the contact pad by texturing forces onto adjacent portions of the textured or porous surface of the solar cell. Also, during the deposition process, a portion of the conductive bonding material may deflect the contact pad, but instead may be deposited on adjacent portions of the solar cell surface and possibly diffused therefrom. Such diffusion and / or inaccurate deposition of the conductive bonding material can weaken bonding between the overlapping solar cells and damage portions of the solar cell on which the conductive bonding material has been dispersed or erroneously deposited . This diffusion of the electrically conductive bonding material can be accomplished, for example, by forming a dam or barrier around or around each contact pad to maintain the electrically conductive bonding material in position substantially Can be reduced or prevented by the metallization pattern.

For example, the front metallization pattern may include separate contact pads 15, fingers 20 and barriers 17, as shown in Figures 2h-2k, 17 surround the corresponding contact pad 15 and function as a dam to form a moat between the contact pad and the barrier. Portions 19 of the un-cured conductive adhesive bonding material 18 that flow out of or out of the contact pads when dispersed onto the solar cell are removed by the barriers 17 Lt; / RTI > This prevents further diffusion of the conductive adhesive bond material from the contact pads onto the surrounding portions of the cells. Barriers 17 may be formed from the same material (e.g., silver) as, for example, fingers 20 and contact pads 15 and may have a height of, for example, about 10 microns to about 40 microns And may have, for example, widths from about 30 microns to about 100 microns. The moat formed between the barrier 17 and the contact pad 15 may have a width of, for example, about 100 microns to about 2 mm. Although the illustrated examples include only a single barrier 17 around each front contact pad 15, in other variations two or more such barriers may be located concentrically, e.g., around each contact pad . The front contact pads and one or more surrounding barriers may form a shape similar to, for example, a " bulls-eye " target. 2H, for example, the barriers 17 may be interconnected with thin conductors interconnecting the fingers 20 and the contact pads 15. [0033]

Similarly, as shown in FIGS. 21-2n, for example, the rear metallization pattern may be formed by disposing separate back contact pads 25 (e.g., silver), substantially all of the back surface of the solar cell (E.g., aluminum) contacts 30, and (for example, silver) barriers 27, each barrier 27 surrounding a corresponding rear contact pad 25, Acts as a dam forming a moat between the contact pad and the barrier. A portion of the contact 30 may fill the moat as illustrated. Some of the un-cured conductive adhesive bond material that flows out of or out of the contact pads 25 when dispersed onto the solar cell may be confined to the moats by the barriers 27 . This prevents the conductive adhesive bonding material from further diffusing from the contact pads onto the surrounding portions of the cell. Barriers 27 may have heights of, for example, from about 10 microns to about 40 microns, and may have widths from about 50 microns to about 500 microns, for example. The moat formed between the barrier 27 and the contact pad 25 may have a width of, for example, about 100 microns to about 2 mm. Although the illustrated examples include only a single barrier 27 around each back contact pad 25, in other variations two or more such barriers may be disposed concentrically, e.g., around each contact pad . The rear contact pad and one or more surrounding barriers may form a shape similar to, for example, a " bulls-eye " target.

Continuous bus bars or contact pads running substantially the length of the edge of the solar cell may also be surrounded by a barrier that prevents diffusion of the conductive adhesive bonding material. For example, FIG. 2q shows such a barrier 27 surrounding the rear bus bar 25. The front bus bars (e.g., bus bars 15 of FIG. 2A) may similarly be surrounded by a barrier. Similarly, rows of front or back contact pads may be grouped by such a barrier rather than individually surrounded by separate barriers.

As described above, rather than the surrounding bus bars or one or more contact pads, the features of the front or back metallization pattern include the bus bars or contact pads located between the barrier and the edge of the solar cell, It is possible to form the barrier substantially parallel to the overlapped edge of the cell and proceeding to the length of the solar cell. Such a barrier can serve two purposes as a bypass conductor (as described above). For example, in FIG. 2r, the bypass conductor 40 has a barrier that tends to prevent un-cured conductive adhesive bonding material on the contact pads 15 from diffusing onto the active area of the front surface of the solar cell Lt; / RTI > A similar arrangement can be used for the back metallization patterns.

Barriers to diffusion of the conductive adhesive bond material may be spaced apart from the contact pads or bus bars to form a moat as described above, but this is not required. These barriers may replace adjacent contact pads or bus bars, for example, as shown in FIG. 2O or FIG. 2P. In these variations, the barrier is preferably larger than the contact pad or bus bar to hold the un-cured conductive adhesive bond material on the contact pad or bus bar. Although some of the front metallization patterns are shown in Figs. 2O and 2P, similar arrangements can be used for the rear metallization patterns.

Barriers to diffusion of the conductive adhesive bond material and / or the moieties between these barriers and the contact pads or bus bars, and any conductive adhesive bond material diffused into these motors, Can be selectively placed within the region of the solar cell surface superimposed by the solar cell, and thus concealed in the field of view, and can be obscured from exposure to solar radiation.

Optionally or additionally to the use of the barriers as described above, the electrically conductive binding material may be deposited by using a mask or by any other suitable method (e.g., screen printing) to enable precise deposition, Thereby requiring reduced amounts of electrically conductive bonding material that are likely to diffuse over or out of the contact pads during deposition.

More generally, solar cells 10 may employ any suitable front and back metallization patterns.

FIG. 4A shows a part of the front surface of an exemplary rectangular supercell 100 including the solar cells 10 as shown in FIG. 2A arranged in a shingled manner as shown in FIG. As a result of the shingling geometry, there is no physical gap between the pairs of solar cells 10. Although the bus bar 15 of the solar cell 10 can be seen at one end of the supercell 100, the bus bars (or front contact pads) of the other solar cells are overlapped with adjacent solar cells It is hidden under the parts. As a result, the area occupied by the supercell 100 in the solar module is efficiently used. In particular, a larger portion of the area is used to produce electricity than in the case of conventional tabbed solar cell arrangements and solar cell arrangements comprising many visible bus bars on the exemplary surface of the solar cells . FIGS. 4B-4C illustrate front and back views of another exemplary supercell 100, which mainly includes chamfered Chevron rectangular silicon solar cells, but otherwise similar to FIG. 4A.

In the example illustrated in FIG. 4A, the bypass conductors 40 are hidden by overlapping portions of adjacent cells. Alternatively, solar cells including bypass conductors 40 may be overlapped similar to those shown in FIG. 4A without covering the bypass conductors.

The rear metallization of the solar cell at the exposed front bus bar 15 and at the other end of the supercell 100 at one end of the supercell 100 may cause the supercell 100 to contact the other supercells (Terminal) termination contacts for the supercell that may be used to electrically connect to other electrical components and / or to other electrical components if desired.

Adjacent solar cells in the supercell 100 may be superimposed in any suitable amount, for example, from about 1 millimeter (mm) to about 5 mm.

As shown in FIGS. 5A to 5G, for example, the shingled super cells as described above can efficiently fill the area of the solar module. Such solar modules can be, for example, square or rectangular. The rectangular photovoltaic modules as illustrated in Figures 5A-5G may have short sides with a length of, for example, about 1 meter and long sides with a length of, for example, about 1.5 meters to about 2.0 meters . Any other suitable shapes and dimensions for the solar modules may also be used. Any suitable arrangement of supercells in the photovoltaic module may be used.

In a square or rectangular photovoltaic module, the supercells are typically arranged in rows parallel to the short side or long side of the photovoltaic module. Each column may comprise one, two or more super cells arranged end-to-end. The supercell 100 forming part of such a photovoltaic module may comprise any suitable number of solar cells 10 and may be of any suitable length. In some variations, the supercells 100 have a length approximately equal to the length of the short sides of a rectangular photovoltaic module, each of which is a part. In other variations, the supercells 100 have a length approximately equal to one-half the length of the short sides of a rectangular photovoltaic module, each of which is a part. In other variations, the supercells 100 have a length approximately equal to the length of the long sides of a rectangular photovoltaic module, each of which is a part. In other variations, the supercells 100 have approximately the same length as half the length of the long sides of the rectangular photovoltaic module, each of which is a part. The number of solar cells required to make the supersells of these lengths depends, of course, on the dimensions of the solar module, the dimensions of the solar cells, and the amount of overlap between adjacent solar cells. Any other suitable lengths for the supersells may also be used.

In variations where the supercell 100 has a length approximately equal to the length of the short sides of the rectangular photovoltaic module, the supercell may have dimensions of, for example, about 19.5 millimeters (mm) times about 156 mm , And neighboring solar cells may be overlapped by about 3 mm. Eight such rectangular solar cells can be separated from a conventional square or pseudo-square 156 mm wafer. Alternatively, such a supercell may comprise, for example, 38 rectangular solar cells with dimensions of about 26 mm times about 156 mm, and adjacent solar cells may overlap by about 2 mm . Six such rectangular solar cells can be separated from a conventional square or pseudo-square 156 mm wafer. In variations where the supercell 100 has a length approximately equal to one-half the length of the short sides of the rectangular photovoltaic module, the supercell may be, for example, about 19.5 millimeters (mm) times about 156 mm And may include 28 rectangular solar cells with dimensions, and adjacent solar cells may overlap by about 3 mm. Alternatively, such a supercell may comprise, for example, 19 rectangular solar cells with dimensions of about 26 mm times about 156 mm, and adjacent solar cells may overlap by about 2 mm .

In variations where the supercell 100 has a length that is approximately equal to the length of the long sides of the rectangular photovoltaic module, the supercell may comprise, for example, 72 pieces with dimensions of about 26 mm times about 156 mm Rectangular solar cells, and adjacent solar cells can be overlapped by about 2 mm. In variations where the supercell 100 has a length approximately equal to half the length of the long sides of the rectangular photovoltaic module, the supercell has a dimension of, for example, about 26 mm times about 156 mm 36 rectangular solar cells, and adjacent solar cells may overlap by about 2 mm.

5A illustrates an exemplary rectangular photovoltaic module 200 that includes twenty rectangular supercells 100 each having a length approximately equal to half the length of the short sides of the photovoltaic module. The supercells are arranged end to end in pairs so as to form ten rows of supercells, and the columns and long sides of the supercells are oriented parallel to short sides of the photovoltaic module. In other variations, each column of supersells may comprise three or more supersells. In addition, similarly configured photovoltaic modules may contain more or fewer columns of supercells than shown in this example (Fig. 14A, for example, arranged in twelve columns of two super cells, A solar module including twenty-four rectangular supercells).

In those variations where the supercells in each column are arranged such that at least one of them has a front end contact on the end of the supercell adjacent to the other supercell in the column, the gaps 210 Makes it possible to make electrical contacts to front end contacts (e.g., exposed bus bars or separate contacts 15) of the supercells 100 along the centerline of the photovoltaic module. For example, the two super cells in a row may be arranged in a super cell with one front terminal contact along the center line of the solar module and another super cell with its rear terminal contact along the center line of the solar module . In such an arrangement, the two supersells in the column are arranged along the centerline of the photovoltaic module and are interconnected to the front terminal contact of the one supercell and the back terminal contact of the other supercell. (E. G., Fig. 8c, discussed below). ≪ / RTI > In variations where each row of supersells includes three or more supersells, there may be additional gaps between the supersells, and similarly for the front end contacts located away from the sides of the solar module Making it possible to make an electrical contact.

5B shows an exemplary rectangular photovoltaic module 300 including ten rectangular supercells 100 each having a length approximately equal to the length of the short sides of the photovoltaic module. The supercells are arranged in a series of ten parallel rows with their long sides oriented parallel to the short sides of the module. A similarly configured solar module may include more or fewer rows of such side length super cells as shown in this example.

5B also shows how the solar module 200 of FIG. 5A looks when there are no gaps between adjacent supercells within the rows of super cells in the solar module 200. FIG. The gap 210 in Figure 5a can be removed, for example, by arranging the supercells so that both supergels in each column have their rear end contacts along the centerline of the module. In this case, the supercells may be arranged substantially adjacent to one another without a gap or an additional gap between them because access to the front of the supercell is not required along the center of the module. Optionally, two supercells 100 in the column may have one of their front-end contacts along the side of the module and a rear-end contact along the centerlines of the module, With the end contacts having their back end contacts along opposite sides of the module, and the adjacent ends of the supercells can be arranged overlapping. Wherein the flexible interconnects extend over the overlapping ends of the supercells so as to provide an electrical connection to one front end contact of the supercells and a rear end contact of the other supercell, Respectively. For the columns containing three or more supercells, these two approaches can be used in combination.

The rows of supercells and super cells shown in 5A-5B may be interconnected by any suitable combination of series and parallel electrical connections, for example as further described below with respect to Figs. 10A-15. Interconnections between supercells can be made using flexible interconnects, for example, similar to those described below with respect to Figures 5C-5G and subsequent figures. As evidenced by the many examples described herein, supercells in the solar modules described herein provide series couplings to provide an output voltage for the module that is substantially identical to that of a conventional solar module, And may be interconnected by parallel connections. In these cases, the output current from the solar module may also be substantially the same as for a conventional solar module. Alternatively, as further described below, supercells in the solar module can be interconnected to provide a significantly higher output voltage from the solar module than would be provided by conventional solar modules.

5C illustrates an exemplary rectangular photovoltaic module 350 that includes six rectangular supercells 100 each having a length approximately equal to the length of the long sides of the photovoltaic module. The supercells are arranged in six parallel rows with their long sides oriented parallel to the long sides of the module. A similarly configured solar module may include more or fewer rows of supercells of this side length in this example. In this example (and in some of the following examples), each supercell includes 72 rectangular solar cells each having a width approximately equal to 1/6 of the width of a 156 mm square or pseudo-square wafer. Any other suitable number of rectangular solar cells that are any other suitable dimensions may also be used. In this example, the front terminal contacts of the supercells are electrically connected to each other by flexible interconnects 400 located adjacent and parallel to the edge of one short side of the module. The rear terminal contacts of the supercells are likewise electrically connected to each other by flexible interconnects located parallel and adjacent to the edge of the other short side of the back of the photovoltaic module. The rear interconnects are hidden in the view in Figure 5c. This arrangement electrically connects the six module-length super cells in parallel. The details of these flexible interconnects and their arrangement in these and other solar module configurations are discussed in more detail below with respect to Figures 6-8G.

5D illustrates an exemplary rectangular photovoltaic module 360 that includes twelve rectangular supercells 100 each having a length approximately equal to half the length of the long sides of the photovoltaic module. The super cells are arranged end to end in pairs to form six columns of supersells, and the long sides of the columns and super cells are oriented parallel to the long sides of the photovoltaic module. In other variations, each column of supersells may comprise three or more supersells. In addition, similarly configured solar modules may include more or fewer rows of the supercells shown in this example. In this example (and in some of the following examples), each supercell includes 36 rectangular solar cells each having a width approximately equal to 1/6 of the width of a 156 mm square or pseudo-square wafer. Any other suitable number of rectangular solar cells that are any other suitable dimensions may also be used. The gap 410 makes it possible to make electrical contact to the front end contacts of the supercells 100 along the centerline of the solar module. In this example, flexible interconnects 400 located adjacent and parallel to the edge of one short side of the module electrically interconnect the six front terminal contacts of the supercells. Similarly, the flexible interconnects located adjacent and parallel to the edge of the other short side of the module behind the module electrically connect the rear terminal contacts of the other six super cells. Flexible interconnects (not shown in this figure) located along the gap 410 interconnect each pair of supersells in the column in series and optionally extend laterally to interconnect adjacent columns in parallel . This arrangement electrically connects the six columns of the supersells in parallel. Optionally, a first super cell in each column in a first group of the super cells is electrically connected in parallel with the first super cell in each of the other columns, and the second super cell in a second group of super cells And the second group of the supercells is electrically connected in series with the second supercell in each of the other columns. The latter arrangement allows two groups of each of the supergels to be individually input in parallel with a bypass diode.

Details A of Figure 5d identify the location of the cross-section shown in Figure 8a of the interconnections of the rear terminal contacts of the supercells along one short side edge of the module. Part B similarly identifies the location of the cross-section shown in Figure 8B of the interconnections of the front terminal contacts of the supercells along the other short side of the module. Detail C identifies the location of the cross-section shown in Figure 8C of the serial interconnection of the supercells in the column along the gap 410.

5E shows that in this example all of the solar cells in which the supercells are formed are all Chevron solar cells with chamfered edges corresponding to the corners of the pseudo-square wafers from which the solar cells have been separated. Lt; RTI ID = 0.0 > 370 < / RTI >

5F is similar to the case of FIG. 5C, except that solar cells in which supercells are formed include a mixture of chevron and rectangular solar cells to reproduce the shapes of the pseudo-square wafers from which they were separated Lt; RTI ID = 0.0 > 380 < / RTI > In the example of FIG. 5F, the chevron solar cells may be wider than the rectangular solar cells orthogonally to their long axes to compensate for the diverging edges on the chevron cells, so that the chevron solar cells and the rectangular solar cells Have the same active area exposed to solar radiation during operation of the module and thus have a corresponding current.

5G shows that in the solar module of FIG. 5G, adjacent Chevron solar cells in the supercell are arranged in mirror images with respect to each other so that their overlapping edges are the same length. In the case of FIG. 5E ≪ / RTI > shown in FIG. 1). This maximizes the length of each overlapping joint, thereby enabling heat flow through the supercell.

Other configurations of rectangular photovoltaic modules include one or more columns of supercells formed solely of rectangular (non-chamfered) solar cells and one or more columns of supercells formed solely of chamfered solar cells . For example, a rectangular photovoltaic module may be configured similar to the case of FIG. 5C, except that it has two outer rows of supersells, each replaced by a row of super cells formed only of chamfered solar cells . The chamfered solar cells in these rows may be arranged in pairs of mirrors, for example, as shown in Fig. 5G.

In the exemplary solar modules shown in Figs. 5C-5G, the current along each column of supersells is about one-sixth of the active area of the rectangular solar cells in which the super cells are formed, Lt; RTI ID = 0.0 > photovoltaic < / RTI > module of the same area. However, in these examples, since the six columns of the supersells are electrically connected in parallel, the exemplary solar modules can generate the same total current as generated by a conventional solar module of the same area. This enables the substation of the exemplary solar modules of FIGS. 5C-5G (and other examples described below) for conventional solar modules.

Figure 6 shows an exemplary arrangement of the three rows of supercells interconnected by flexible electrical interconnects in parallel with each other such that the supergels in each column are in series with each other and in greater detail in Figures 5C- . These may be, for example, three columns in the solar module of Figure 5d. In the example of FIG. 6, each supercell 100 has a flexible interconnect 400 that is conductively coupled to its front-side terminal contact and another flexible interconnect that is conductively coupled to its backside terminal contact. The two super cells in each column are electrically connected in series by a shared flexible interconnect that is conductively coupled to the front terminal contact of one super cell and the back terminal contact of the other super cell. Each flexible interconnect may extend laterally adjacent and parallel to the end of the super cell to which it is coupled and laterally beyond the supercell to be conductively coupled to the flexible interconnect on the supercell in an adjacent row, They are electrically connected in parallel. The dashed lines in FIG. 6 represent portions of the flexible interconnects hidden in the field by overlapping portions of the super cells, or portions of the super cells hidden in the field by overlapping portions of the flexible interconnects.

Flexible interconnects 400 may be electroconductively coupled to the supercells with mechanically flexible and electrically conductive coupling materials, such as those described above, for use in coupling superposed solar cells, for example. Optionally, the electrically conductive bonding material reduces stresses parallel to the edges of the supercell resulting from a mismatch between the thermal expansion coefficient of the electrically conductive bonding material or the interconnects and the thermal expansion coefficient of the supercell Or may be located in distinct locations along the edges of the supercell rather than in a continuous line extending substantially the length of the edge of the supercell.

Flexible interconnects 400 may or may not be formed of, for example, thin copper sheets. Flexible interconnects 400 are selectively patterned to increase their mechanical integrity (flexibility) both orthogonal and parallel to the edges of the supersells resulting from the mismatch between the CTE of the interconnects and the CTEs of the supercells Or otherwise configured. Such patterning may include, for example, slits, slots, or holes. The conductive portions of the interconnects 400 may have a thickness, for example, less than about 100 microns, less than about 50 microns, less than about 30 microns, or less than about 25 microns, to increase flexibility of the interconnects. The mechanical compliance of the flexible interconnect and its combination with the super cells resist the stresses resulting from CTE mismatch during the lamination process, which will be described in more detail below on methods of fabricating the shunged solar cell modules, Should be sufficient for the interconnected supercells to withstand the stresses resulting from CTE mismatch during temperature cycling testing at -40 ° C to about 85 ° C.

Preferably, the flexible interconnects 400 are less than or equal to about 0.015 ohms, less than or equal to about 0.012 ohms, or less than or equal to about 0.01 < RTI ID = 0.0 > Or less than ohms.

FIG. 7A illustrates several exemplary configurations, designated as 400A-400T, which may be suitable for a flexible interconnect 400. FIG.

As shown in the cross-sectional views of Figures 8A-8C, for example, the solar modules described herein typically include super cells and a transparent front sheet 420 and a back sheet (not shown) 430 and one or more encapsulant materials 4101 interposed between the two layers. The transparent front sheet may be, for example, glass. Optionally, the backsheet may also be transparent, which may enable double sided operation of the solar module. The back sheet may be, for example, a polymer sheet. Optionally, the solar module may be a glass-glass module having glass on both the front and back sheets.

Sectional view of FIG. 8A (detail A from FIG. 5D) shows a cross-sectional view of the photovoltaic module which is conductively coupled to the rear terminal contact of the supercell in the vicinity of the edge of the photovoltaic module and extends inwardly below the supercell, Lt; RTI ID = 0.0 > 400 < / RTI > An additional strip of encapsulant may be disposed between the interconnect 400 and the backside of the supercell as illustrated.

A cross-sectional view of FIG. 8B (detail B from FIG. 5B) shows an example of a flexible interconnect 400 that is conductively coupled to the front-terminal contact of the supercell.

The cross-sectional view of FIG. 8c (detail C from FIG. 5b) shows a cross-sectional view of a shared flexible lead-in contact electrically coupled to the front terminal contact of one supercell and the rear terminal contact of the other supercell to serially electrically connect the two supercells. And an example of the interconnect 400 is shown.

Flexible interconnects electrically connected to the front-terminal contacts of the supercell may be configured or arranged to occupy only a narrow width of the front face of the photovoltaic module, which may be located, for example, adjacent the edge of the photovoltaic module . The area of the front surface of the module occupied by such interconnects may have a narrow width, for example, ≤ about 10 mm, ≤ about 5 mm, or ≤ about 3 mm, which is perpendicular to the edge of the supercell. In the arrangement shown in Figure 8B, for example, the flexible interconnect 400 may be configured to extend beyond the end of the supercell only at such a distance. 8D-8G illustrate additional examples of arrangements in which a flexible interconnect electrically connected to the front-terminal contact of the supercell can occupy only a narrow width of the front face of the module. These arrangements enable efficient utilization of the front surface area of the module to produce electricity.

8D shows a flexible interconnect 400 that is conductively coupled to the terminal front contact of a supercell and folds backwardly of the supercell about the edge of the supercell. An insulating film 435 that can be applied in advance on the flexible interconnect 400 may be disposed between the flexible interconnect 400 and the back surface of the supercell.

8E shows a flexible interconnect 400 including a thin ribbon 440 that is conductively coupled to the terminal front contact of the supercell and a thin and wide ribbon 445 extending behind the back of the supercell. An insulating film 435 which can be previously applied on the ribbon 445 can be disposed between the ribbon 445 and the rear surface of the supercell.

8F shows a flexible interconnect 400 that is coupled to the terminal front contact of the supercell and is wound and pressed into a planarized coil occupying only a narrow width of the front surface of the photovoltaic module.

Figure 8G shows a flexible interconnect 400 that includes a thin ribbon section that is conductively coupled to the terminal face contact of the supercell and a thick cross-sectional area that is located adjacent to the supercell.

8A-8G, the flexible interconnects 400 may extend along the entire length of the edges of the supercells (e.g., into the ground of the drawing), for example, as shown in FIG.

Alternatively, portions of the flexible interconnect 400 that may otherwise be visible from the front of the module may be of a darker color such as to reduce the visible contrast between the interconnect and the supercell as would be appreciated by a person with normal hue May be covered with a film, coated, or otherwise colored. For example, in Figure 8C, a selective black film or coating 425 covers portions of the interconnect 400 that otherwise would have been visible from the front of the module. Otherwise, visible portions of the interconnect 400 shown in the other figures may be covered or may have a hue.

Conventional solar modules typically include three or more bypass diodes, each bypass diode connected in parallel with a series of 18 to 24 silicon solar cells. This is done to limit the amount of power that can be lost to heat in a reverse biased solar cell. The solar cell can be reverse biased due to, for example, defects, dirty fronts, or uneven illumination that reduces its ability to pass current generated within the string. The heat generated in the solar cell at the reverse bias depends on the voltage across the solar cell and the current through the solar cell. When the voltage across the reverse biased solar cell exceeds the breakdown voltage of the solar cell, the heat lost in the cell is equal to the breakdown voltage at the total current times generated in the string will be. Silicon solar cells typically have a breakdown voltage of 16 volts to 30 volts. Because each silicon solar cell produced a voltage of about 0.64 volts in operation, a string of twenty-four or more solar cells could generate a voltage across the reverse biased solar cell that exceeded the breakdown voltage.

In conventional solar modules where the solar cells are spaced apart from one another and are interconnected by ribbons, heat is not easily transported away from the hot solar cell. Thus, the power dissipated in the solar cell at the breakdown voltage could generate a significant thermal damage and possibly a hot spot in the solar cell that caused the fire. In conventional photovoltaic modules, the bypass diode is therefore required for all groups of 18-24 series-connected solar cells to ensure that there is no solar cell in the string that can be reverse biased above the breakdown voltage .

The inventors have found that heat is easily transferred through thin electrically and thermally conductive bonds between adjacent and overlapping silicon solar cells along the silicon super cell. In addition, the current through the supercell in the solar modules described herein may be substantially the same as the current through the supercell of the rectangles described herein (for example, 1/6) Is typically formed by shingling solar cells, and is typically smaller than through a string of conventional solar cells. Moreover, the rectangular aspect ratio of solar cells employed here typically provides extended regions of terminal contacts between adjacent solar cells. As a result, less heat is lost in the solar cell reverse-biased at the breakdown voltage and the heat is easily diffused through the supercell and the solar module without creating a dangerous hot spot. The inventors have thus realized that solar modules formed from the supercells as described herein can employ far fewer bypass diodes than would be required if conventionally required.

For example, in some variations of photovoltaic modules as described herein, N> 25 solar cells, N? About 30 solar cells, N? About 50 solar cells, N? About 70 Solar cells, or a supercell comprising N? About 100 solar cells may be employed without a single solar cell or group of solar cells in a supercell electrically connected in parallel with the bypass diode individually . Alternatively, the entire super cells of these lengths may be electrically connected in parallel with a single bypass diode. Alternatively, supers cells of these lengths may be employed without a bypass diode.

Some additional and optional design features may implement solar modules that employ super cells as described herein that further resist heat lost in a reverse biased solar cell. 8A-8C, the encapsulant 4101 may or may not be a thermoplastic olefin (TPO) polymer, and the TPO encapsulants may be selected from the group consisting of standard ethylene-vinyl acetate EVA) encapsulants in a photo-thermal stability. EVA will become brown with temperature and ultraviolet light, and will cause hot spot problems caused by current limiting cells. These problems are reduced or avoided with TPO encapsulants. In addition, the solar modules may have a glass-glass structure in which both the transparent front sheet 420 and the back sheet 430 are glass. Such a glass-glass allows the solar module to operate stably at higher temperatures than those cases where it is endured by a conventional polymer backsheet. Furthermore, junction boxes may be mounted on one or more edges of the solar module rather than behind the solar module, where the junction box is positioned in the module above the solar cells Additional layers of thermal insulation could be added.

Figure 9a shows an exemplary rectangular photovoltaic module comprising six rectangular shingled supercells arranged in six rows extending the length of the long sides of the solar module. The six super cells are electrically connected in parallel to a bypass diode disposed in a junction box 490 on the other side and on the back side of the solar module. The electrical connections between the supercells and the bypass diode are made through ribbons 450 embedded in the laminate structure of the module.

Figure 9b shows another exemplary rectangular photovoltaic module comprising six rectangular shingled supercells arranged in six rows extending the length of the long sides of the solar module. The supercells are electrically connected in parallel. Disposed anode 490P and cathode 490N terminal junction boxes are disposed on the back surface of the solar module at opposite ends of the solar module. The supercells are electrically connected in parallel with a bypass diode located in one of the junction boxes by an external cable 455 running between the junction boxes.

FIGS. 9c-9d illustrate an exemplary glass-ceramic module including six rectangular shingled supercells arranged in six rows extending in length of the long sides of the solar module in a lamination structure comprising glass front and back sheets, A glass rectangular photovoltaic module is shown. The supercells are electrically connected in parallel with each other. The separated anode 490P and cathode 490N terminal junction boxes are mounted on opposite edges of the solar module.

The shingled super cells may be used in module level power management devices (e.g., DC / AC microinverters, DC / DC module power optimizers, voltage intelligence and smart Switches, and related devices). ≪ / RTI > An important feature of these module level power management systems is power optimization. Supercells, as described and employed herein, can produce higher voltages than conventional panels. Further, the super cell module layout can further divide the module. Both higher voltages and increased division create potential advantages for power optimization.

Figure 9E illustrates one exemplary configuration for module level power management using shingled super cells. In this figure, an exemplary rectangular photovoltaic module includes six rectangular shingled supercells arranged in six rows extending the length of the long sides of the solar module. The three pairs of supercells are individually connected to the power management system 460 and enable a separate power optimization of the module.

9F illustrates another exemplary configuration for module level power management using shingled super cells. In this figure, an exemplary rectangular photovoltaic module includes six rectangular shingled supercells arranged in six rows extending the length of the long sides of the solar module. The six super cells are individually connected to a power management system 460, which further enables a separate power optimization of the module.

Figure 9G illustrates another example for module level power management using shingled super cells. In this figure, an exemplary rectangular photovoltaic module comprises six or more rectangular shingled supercells 998 arranged in six or more columns, wherein the three or more pairs of supercells are connected to the module And is separately connected to a bypass diode or power management system 460 to enable further more power optimization.

Figure 9h illustrates another exemplary configuration for module level power management using shingled super cells. In this figure, an exemplary rectangular photovoltaic module comprises six or more rectangular shingled supercells 998 arranged in six or more columns, wherein the two supercells are connected in series and each pair Are connected in parallel. A bypass diode or power management system 460 is connected in parallel to all of the pairs to enable power optimization of the module.

In some variations, module level power management still allows elimination of all bypass diodes on the photovoltaic module while still eliminating the risk of hot spots. This is implemented by integrating voltage intelligence at the module level. By monitoring the voltage output of a solar cell circuit (e.g., one or more supercells) within the solar module, a " smart switch " power management device can determine whether this circuit is in any solar Batteries. ≪ / RTI > When a reverse biased solar cell is detected, the power management device may disconnect the corresponding circuit from the electrical system, for example, using a relay switch or other component. For example, if the voltage of the monitored solar cell circuit drops below a predetermined limit (V _Limit ), then the power management unit will block such a circuit while leaving the string of modules or modules connected, (open circuit).

In certain embodiments, if the voltages of the circuits drop to a certain percentage or size (e.g., 20% or 10V) from the other circuits in the same solar cell array, this will be blocked. The electronic device will detect such a change based on inter-module communication.

Implementations of this voltage intelligence can be implemented using existing module-level power management solutions (e.g., Enphase Energy Inc., Solaredge Technologies, Inc., Tigo Energy, Inc. .), Or may be subjected to custom circuit design.

The V _Limit One example of how the threshold voltage can be calculated is,

CellVocc @ _{Low Irr & High Temp} N _{number of cells in series-} Vrb _{Reverse breakdown voltage <} V _Limit ,

● CellVoc _@ Low _{Irr & High Temp} = Open circuit voltage (lowest expected action Voc) of the cell operating at low illumination and high temperature,

N _{number of cells in series} = _{number of cells connected in series} within each monitored supercell,

• Vrb _{Reverse breakdown voltage} = the inverted polarity voltage required to pass current through the cell.

This approach to module-level power management using smart switches allows for, for example, more than 100 silicon solar cells to be connected in series within a single module without affecting stability or module reliability. Such a smart switch can also be used to limit the string voltage going to the central inverter. Longer module strings can thus be installed without allowing for stability or concern with respect to voltage. The weakest module may be bypassed (turned off) when the string voltages are raised against this limit.

Figures 10a, 11a, 12a, 13a, 13b and 14b, described below, provide additional exemplary schematic electrical circuits for photovoltaic modules employing shingled supercells. 12b-2, 12b-1, 12b-2, 11c-1, 11c-2, 12b-1, 12b-2, 12c-1, 12c- Figures 12c-3, 13c-1, 13c-2, 14c-1 and 14c-2 provide exemplary physical layouts corresponding to these schematic circuits. The description of the physical layouts assumes that the front end contact of each supercell is negative polarity and the back end contact of each supercell is of positive polarity. If the modules instead employ super cells with positive polarity front end contacts and negative polarity back end contacts, then the discussion of the following physical layouts will change the amount to negative and the orientation of the bypass diodes Can be changed by inversion. Some of the various busses referred to in the description of these figures may be formed, for example, with the interconnects 400 described above. Other buses described in these figures may be implemented, for example, with ribbons or external cables embedded in a laminate structure of the solar module.

10A shows an exemplary electrical circuit for a solar module as illustrated in FIG. 5B, wherein each of the solar modules has a rectangular array of ten rectangles each having a length approximately equal to the length of the short sides of the solar module And super cells 100. The supercells are arranged in the solar module with their long sides oriented parallel to the short sides of the module. All of the supercells are electrically connected in parallel with the bypass diode 480.

Figures 10B-1 and 10B-2 illustrate an exemplary physical layout for the solar module of Figure 10A. The bus 485N connects the negative (front) end contacts of the supercells 100 to the positive terminal of the bypass diode 480 in a junction box 490 located on the backside of the module. The bus 485P connects the positive (back) end contacts of the supercells 100 to the negative terminal of the bypass diode 480. [ The bus 485P may be placed entirely behind the supercells. The bus 485N and / or its interconnections to the supercells occupy a portion of the front of the module.

11A shows an exemplary schematic electrical circuit for a solar module as illustrated in FIG. 5A, wherein the solar modules each include a plurality of solar modules each having a length approximately equal to half the length of the short sides of the solar module Square super cells 100, and the super cells are arranged end to end in pairs so as to form ten rows of super cells. The first super cell in each column is connected in parallel with the first super cells in the other columns and in parallel with the bypass diode 500. A second super cell in each column is connected in parallel with the second super cells in the other columns and in parallel with the bypass diode 510. The two groups of supercells are connected in series as in the case of the two bypass diodes.

Figures 11b-1 and 11b-2 illustrate an exemplary physical layout for the solar module of Figure 11a. In this layout, the first super cell in each column has its front (negative) end contact along the first side of the module and its rear (positive) end contact along the centerline of the module, 2 supercell has its front (negative) end contact along the centerline of the module and its rear (positive) end contact along the second side of the module opposite the first side. Bus 515N connects the front (negative) end contact of the first supercell within each row to the positive terminal of bypass diode 500. [ The bus 515P connects the rear (positive) end contact of the second supercell within each row to the negative terminal of the bypass diode 510. [ The bus 520 connects the front (negative) end contact of the second supercell in each row and the rear (positive) end contact of the first supercell within each row to the negative terminal of the bypass diode 500 and the To the positive terminal of the bypass diode (510).

The bus 515P may be placed entirely behind the super cells. The bus 515N and / or its interconnection to the supercelles occupies a portion of the front face of the module. The bus 520 may occupy a portion of the front surface of the module and may require a gap 210, as shown in FIG. 5A. Alternatively, the bus 520 may be located entirely behind the super cells and electrically connected to the super cells with hidden interconnects between the overlapping ends of the super cells. In such a case, a small gap 210 is required, or a gap 210 is not required.

Figures 11c-1, 11c-2, and 11c-3 illustrate another exemplary physical layout for the solar module of Figure 11a. In this layout, the first supercell within each column has its front (negative) end contact along the first side of the module and its rear (positive) end contact along the centerline of the module, The second supercell has its rear (positive) end contact along the centerline of the module and its front (negative) end contact along the second side of the module opposite the first side. A bus 525N connects the front (negative) end contact of the first supercell within each row to the positive terminal of the bypass diode 500. The bus 530N connects the front (negative) end contact of the second cell in each row to the negative terminal of the bypass diode 500 and the positive terminal of the bypass diode 510. [ The bus 535P connects the back (positive) end contact of the first cell in each column to the negative terminal of the bypass diode 500 and the positive terminal of the bypass diode 510. [ Bus 540P connects the back (positive) end contact of the second cell in each column to the negative terminal of the bypass diode 510. [

Bus 535P and bus 540P may be placed entirely behind the supercells. The bus 525N and bus 530N and / or their interconnections to the supercells occupy part of the front face of the module.

12A shows another exemplary schematic circuit diagram for a solar module as illustrated in FIG. 5A, wherein each of the solar modules includes a plurality of solar modules each having a length approximately equal to half the length of the short sides of the solar module Square super cells 100, which are arranged end to end in pairs to form ten rows of supersells. In the circuit shown in Fig. 12A, the supercells are arranged in four groups. The first super cells of the upper five columns in the first group are connected in parallel to each other and to the bypass diode 545 and the second super cells of the upper five columns in the second group are connected to each other The first supercells of the lower five columns in the third group are connected in parallel to each other and to the bypass diode 560, and the fifth subcells of the fifth group are connected in parallel to the bypass diode 560 in the fourth group, The second super cells of the columns are connected to each other and to the bypass diode 555 in parallel. The four groups of super cells are connected in series with each other. The four bypass diodes are also connected in series.

Figures 12b-1 and 12b-2 illustrate an exemplary physical layout for the solar module of Figure 12a. In this layout, a first group of supercells has its front (negative) end contacts along the first side of the module and its rear (positive) end contacts along the centerline of the module, 2 group has its front (negative) end contacts along the centerline of the module and its rear (positive) end contacts along the second side of the module facing the first side, and the third Group has its front (negative) end contacts along its first side and its rear (positive) end contacts along the centerline of the module, and the fourth group of supergels along the centerline of the module (Positive) end contact along its second side of the module and a front (negative) end contact along its second side.

Bus 565N connects the front (negative) end contacts of the supercells in the first group of supersells to each other and to the positive terminals of bypass diode 545. [ The bus 570 connects the front (negative) end contacts of the supercells within the second group of supercells and the back (positive) end contacts of the supercells within the first group of supercells with respect to each other And is connected to the negative terminal of the bypass diode 545 and the positive terminal of the bypass diode 550. Bus 575 is connected to the back (positive) end contacts of the supercells in the second group of supersells and the front (negative) end contacts of the supersells in the fourth group of supersells And is connected to the negative terminal of the bypass diode 550 and the positive terminal of the bypass diode 555. The bus 580 connects the front (negative) end contacts of the supercells within the third group of supercells and the back (positive) end contacts of the supercells within the fourth group of supercells with respect to each other To the negative terminal of the diode 555 and to the positive terminal of the bypass diode 560. The bus 585P connects the back (positive) end contacts of the supercells in the third group of supersells to each other and to the negative terminal of the bypass diode 560. [

A portion of the bus 575 connecting the bus 585P and the supercells in the second group of supersells may be placed entirely behind the supersells. The remainder of the bus 575 and their interconnections to the bus 565N and / or the super cells occupy a portion of the front face of the module.

Bus 570 and bus 580 may occupy a portion of the front surface of the module and may require a gap 210 as shown in FIG. 5A. Alternatively, they may be placed entirely behind the super cells and electrically connected to the super cells with hidden interconnects between the overlapping ends of the super cells. In such a case, a small gap 210 is required or a gap 210 is not required.

Figures 12c-1, 12c-2, and 12c-3 illustrate alternative physical layouts for the solar module of Figure 12a. This layout uses two junction boxes 490A, 490B instead of the single junction box 490 shown in Figures 12b-1 and 12b-2, Is equivalent to the case.

13A shows another exemplary schematic circuit diagram for a solar module as illustrated in FIG. 5A, wherein each of the solar modules comprises a plurality of solar modules each having a length approximately equal to half the length of the short sides of the solar module Square super cells 100, which are arranged end to end in pairs to form ten rows of supersells. In the circuit shown in Fig. 13A, the supercells are arranged in four groups. The first super cells of the upper five columns in the first group are connected in parallel to each other, the second super cells of the upper five columns in the second group are connected in parallel to each other, The first super cells of the columns are connected to each other in parallel, and the second super cells of the lower five columns in the fourth group are connected in parallel with each other. The first group and the second group are connected in series with each other, and thus are connected in parallel with the bypass diode 590. The third group and the fourth group are connected in series with each other, and thus are connected in parallel with other bypass diodes 595. The first and second groups are connected in series with the third and fourth groups, and the two bypass diodes are also connected in series.

Figures 13c-1 and 13c-2 illustrate an exemplary physical layout for the solar module of Figure 13a. In this layout, a first group of supercells has its front (negative) end contact along the first side of the module and its rear (positive) end contact along the centerline of the module, Group has its front (negative) end contact along the centerline of the module and its rear (positive) end contact along the second sides of the module opposite the first side, and the third group of supersells (Positive) end contact along its first side and a front (negative) end contact along the centerline of the module, and a fourth group of supersells along its center line to the rear Positive) end contact along the second side of the module and a front (negative) end contact along the second side of the module.

The bus 600 is connected to the first group of front side (negative) end contacts of the supercells with respect to each other and with the rear (positive) end contacts of the third group of supergels, the cathode of the bypass diode 590 Terminal, and the negative terminal of the bypass diode 595. Bus 605 connects the back (positive) end contacts of the first group of supersells to each other and to the front (negative) end contacts of the second group of supersells. The bus 610P connects the rear (positive) end contacts of the second group of supercells to each other and to the negative terminal of the bypass diode 590. [ Bus 615N connects the front (negative) end contacts of the fourth group of supercells to each other and to the positive terminal of the bypass diode 595. [ The bus 620 connects the front (negative) end contacts of the third group of supersells to each other and to the back (positive) end contacts of the fourth group of supersells.

A portion of the bus 600 connecting the bus 610P and the third group of super cells may be placed entirely behind the super cells. The remainder of the bus 600 and their interconnections to the bus 615N and / or the super cells occupy a portion of the front face of the module.

Bus 605 and bus 620 occupy a portion of the front face of the module and require a gap 210 as shown in Figure 5A. Alternatively, they may be placed entirely behind the super cells and electrically connected to the super cells with hidden interconnects between the overlapping ends of the super cells. In such a case, a small gap 210 is required or a gap 210 is not required.

Figure 13b shows an exemplary schematic circuit diagram for a solar module as illustrated in Figure 5b wherein the solar module comprises ten rectangular superslots having a length approximately equal to the length of the short sides of the solar module, Cells 100. < / RTI > The supercells are arranged in the photovoltaic module with their long sides oriented parallel to the short sides of the module. In the circuit shown in Fig. 13B, the supercells are arranged in two groups. The five upper supercells in the first group are connected to each other and to the bypass diode 590 in parallel, and the lower five supercells in the second group are connected to each other and to the bypass diode 595 in parallel Lt; / RTI > The two groups are connected in series with each other. The bypass diodes are also connected in series.

The schematic circuit of Fig. 13B differs from the case of Fig. 13A in that each column of the two super cells of Fig. 13A is replaced by a single super cell. Accordingly, the physical layout of the photovoltaic module of Fig. 13B can be as shown in Figs. 13C-1, 13C-2 and 13C-3 with the bus 605 and bus 620 omitted.

14A illustrates an exemplary rectangular photovoltaic module 700 that includes twenty-four rectangular supercells 100 each having a length approximately equal to one-half the length of the short sides of the photovoltaic module. The supercells are arranged in pairs in half pairs to form twelve rows of supersells, the columns and long sides of the supersells being oriented parallel to the short sides of the photovoltaic module.

Fig. 14B shows an exemplary schematic circuit diagram for a solar module as illustrated in Fig. 14A. In the circuit shown in Fig. 14B, the supercells are arranged in three groups. The first super cells of the upper eight columns in the first group are connected in parallel to each other and to the bypass diode 705 and the supergels of the lower four columns in the second group are connected to each other and to the bypass diode Diodes 710 and the second supersells of the eight upper rows in the third group are connected in parallel to each other and to the bypass diode 715. [ The three groups of supersells are connected in series. The three bypass diodes are also connected in series.

Figures 14c-1 and 14c-2 illustrate exemplary physical layouts for the solar module of Figure 14b. In this layout, a first group of supercells have their front (negative) end contacts along the first side of the module and their rear (positive) end contacts along the centerline of the module. In a second group of the supercells, a first supercell of each of the four rows below is arranged along the first side of the module with its rear (positive) end contact and its front side along the centerline of the module ) End of the module, and a second super-cell of each of the four rows of the bottom, along the centerline of the module, has its front (negative) end contact, and its second side along the second side of the module facing the first side And has a back (positive) end contact. The third group of solar cells have their back (positive) end contacts along the centerline of the module and their back (negative) end contacts along the second side of the module.

The bus 720N connects the front (negative) end contacts of the first group of supercells to each other and to the positive terminal of the bypass diode 705. The bus 725 couples the rear (positive) end contacts of the first group of supercells with the front (negative) end contacts of the second group of supergels, the negative terminal of the bypass diode 705, And to the positive terminal of the pass diode 710. The bus 730P connects the back (positive) end contacts of the third group of supercells to each other and to the negative terminal of the bypass diode 715. The bus 735 connects the front (negative) end contacts of the third group of supersells to each other and the back (positive) end contacts of the second group of supersells, the bypass diode 710 The negative terminal of the bypass diode 715, and the positive terminal of the bypass diode 715.

A portion of the bus 725 connected to the first group of super cells of the super cells, a bus 730P, and a portion of the bus 735 connected to the second group of super cells of the super cells, Can be placed behind. The bus 720N and the remainder of the bus 725 and their interconnections to the bus 735 and / or the super cells occupy part of the front of the module.

Some of the examples described above accommodate the bypass diodes in one or more junction boxes on the back side of the solar module. However, this is not required. For example, some or all of the bypass diodes may be located in a plane with the super cells around the perimeter of the photovoltaic module, may be located in gaps between the super cells, or may be located behind the super cells have. In these cases, the bypass diodes may be disposed, for example, in a laminate structure in which the super cells are sealed. The positions of the bypass diodes may thus be decentralized and removed from the junction boxes, for example by placing two of them, which may be located on the back side of the photovoltaic module in the vicinity of the outer edges of the photovoltaic module Lt; RTI ID = 0.0 > single < / RTI > terminal junction boxes can be substituted for the center junction box having both anode and cathode module terminals. This approach generally reduces the current path length in the ribbon conductors in the solar module and in the cabling between the solar modules, which can both reduce the material cost and increase the module power (By reducing resistive power losses).

Referring to FIG. 15, for example, the physical layout for various electrical interconnections for a solar module, as illustrated in FIG. 5B, with the schematic circuit diagram of FIG. 10A, includes a bypass diode (480) and two single terminal junction boxes (490P, 490N). It can be understood that Fig. 15 is the best in comparison with Figs. 10B-1 and 10B-2. Other module layouts described above may be similarly modified.

The use of bypass diodes in the laminate as described above has the advantage that power dissipated in a forward-biased bypass diode by reduced-current solar cells could be present in conventional-sized solar cells Can be made possible by the use of rectangular solar cells with reduced current (reduced area) as described above. By-pass diodes in the photovoltaic modules described herein may thus require less heat-sinking than conventionally, and as a result can be moved out of the junction box on the back side of the module and into the laminate .

A single photovoltaic module may include bypass diodes that support two or more of the above-described electrical configurations, for example, supporting interconnects, other conductors, and / or two or more electrical configurations. In these cases, the specific configuration for the operations of the photovoltaic module may be selected from two or more options, including, for example, the use of switches and / or jumper. Other configurations may inject different numbers of supersells in series and / or in parallel to provide different combinations of voltage and current outputs from the solar module. Such a photovoltaic module can thus be a plant or field that can be configured to be selected from two or more different voltage and current combinations, for example, to select between high and low current configurations and low and high current configurations have.

16 illustrates an exemplary deployment of a smart switch module level power management device 750 between two solar modules as described above.

Referring now to FIG. 17, an exemplary method 800 for making photovoltaic modules as disclosed herein includes the following steps. In step 810, conventional sized solar cells (e.g., 156 mm x 156 mm or 125 mm x 125 mm) are cut and / or cut to form rectangular solar cell " strips " Also, for example, see Figs. 3A to 3E and related description). The resulting solar cell strips can be selectively tested and classified according to their current-voltage performance. Cells with coincident or approximate coincidence of current-voltage performance can be advantageously used in the same columns of the same supercell or serially connected supercell. For example, it may be advantageous for cells connected in series in a column of supercells or supersells to produce a coincident or coincident current under the same illumination.

In step 815, supercells are assembled from the strip solar cells with conductive adhesive bonding material disposed between overlapping portions of adjacent solar cells in the supercells. The conductive adhesive bonding material may be applied, for example, by ink jet printing or screen printing.

In step 820, heat and pressure are applied to cure or partially cure the conductive adhesive bonding material between the solar cells in the supercells. In one variant, as each additional solar cell is added to the supercell, the conductive adhesive bonding material between the newly added solar cell and its adjacent and overlapping solar cell (already part of the supercell) Is cured or partially cured before being added to the supercell. In another variation, two or more solar cells or all solar cells in a supercell can be positioned in any desired overlapping manner before the conductive adhesive bonding material is cured or partially cured. The supercells resulting from this step can be selectively tested and classified according to their current-voltage capability. Supercells with matching or roughly matching current-voltage capabilities can be advantageously used in the same column of super cells or in the same solar module. For example, it may be advantageous for the rows of supercells or supercells electrically connected in parallel to produce coincident or coincident voltages under the same illumination.

In step 825, the cured or partially cured super cells are arranged in a desired module configuration with a layered structure comprising an encapsulant material, a transparent front (sun side) sheet and (optionally transparent) And interconnected. The stratified structure may comprise, for example, a first layer of an encapsulant on a glass substrate, interconnected supercells arranged below the sun side of the first layer of encapsulant, a second layer of encapsulant in the layer of super cells, And a back sheet on the second layer of the sealing material. Any other suitable arrangement may also be used.

In lamination step 830, heat and pressure are applied to the stratified structure to form a cured laminate structure.

In one variation of the method of Figure 17, the conventional size solar cells are separated into solar cell strips, which are then applied to each individual solar cell strip. In an alternative variant, the conductive adhesive bond material is applied to the conventional size solar cells prior to the separation of the solar cells into solar cell strips.

In the curing step 820, the conductive adhesive bond material may be cured entirely or partially cured. In the latter case, the conductive adhesive bonding material may be partially cured initially at step 820 and fully cured during the subsequent lamination step 830 to sufficiently facilitate handling and interconnection of the supercells.

In some variations, the supercell 100 assembled as an intermediate product in the method 800 may be fabricated from the side walls of adjacent solar cells overlapping and electrically coupled as described above and at opposite ends of the supercell And a plurality of rectangular solar cells (10) arranged with interconnects coupled to terminal contacts.

30A illustrates an exemplary supercell having electrical interconnects coupled to its front and rear terminal contacts. The electrical interconnects run parallel to the terminal edges of the supercell and extend laterally past the supercell to allow electrical interconnection with adjacent supercells.

30B shows two super-cells of FIG. 30A connected in parallel. Portions of the interconnects that otherwise would be visible from the front of the module may be covered or colored to reduce the visual contrast between the interconnect and the supercells as recognized by a person with normal hue For example, dark). In the example illustrated in Figure 30A, the interconnect 850 is conductively coupled to a first polarity (e.g., + or -) front-side terminal contact at one end (right side of the figure) of the supercell, (850) is electrically coupled to the opposite-side terminal contact of the opposite polarity at the other end (left side of the drawing) of the supercell. Similar to other interconnects described above, interconnects 850 may be conductively coupled to the supercell with the same conductive adhesive bonding material used, for example, between solar cells, but this is not required. In the illustrated example, a portion of each interconnect 850 extends beyond the edge of the supercell 100 in a direction perpendicular to the long axis of the supercell (and parallel to the long axes of the solar cells 10) do. As shown in FIG. 30B, this allows two or more super cells 100 to be positioned more closely, and interconnects 850 of one supercell are adjacent to each other to electrically interconnect the two super cells in parallel Overlaps and is electrically coupled to corresponding interconnects 850 on the supercell. Some of these interconnects 850 that are interconnected in series as described above may form a bus for the module. This arrangement may be suitable, for example, when the individual super cells extend to the full width or the entire length of the module (e.g., Fig. 5B). Interconnects 850 can also be used to electrically couple the terminal contacts of two adjacent supercells in the columns of supersells in series. Pairs or long strings of these interconnected supercells in the column may be formed by overlapping and electrically coupling interconnects 850 in one row to interconnects 850 in an adjacent row, as shown in Figure 30B, May be electrically connected in parallel with similarly interconnected supercells in the column.

Interconnect 850 can be die cut from, for example, a conductive sheet, and stresses that are orthogonal and parallel to the edges of the supercell resulting from a mismatch between the CTE of the interconnect and the CTE of the supercell And to increase its mechanical compliance both orthogonal and parallel to the edges of the supercell to reduce or accommodate the superlattice. Such patterning may include, for example, slits, slots, or holes (not shown). The mechanical compliance of the interconnect 850 and its combination or combination with the supercell should be sufficient for connections to the supercell to withstand the stresses resulting from CTE mismatch during the lamination process, which will be described in more detail below. Interconnect 850 may be coupled to the supercell with a mechanically flexible and electrically conductive coupling material, as described above, for example, to be used to couple overlapping solar cells. Optionally, the electrically conductive bonding material reduces stresses parallel to the edges of the supercell resulting from a mismatch between the thermal expansion coefficient of the electrically conductive bonding material or the interconnects and the thermal expansion coefficient of the supercell Or may be located in distinct locations along the edges of the supercell rather than in a continuous line extending substantially the length of the edge of the supercell.

Interconnect 850 can be cut, for example, from a thin copper sheet, and supercells 100 are formed from solar cells having smaller areas than standard silicon solar cells, Lt; RTI ID = 0.0 > conductive interconnects. ≪ / RTI > For example, interconnects 850 can be formed from a copper sheet having a thickness of about 50 microns to about 300 microns. Interconnects 850 can be sufficiently thin and flexible to fold around and around the edges of the super cell to which they are coupled, similar to the interconnects described above.

19A-19D illustrate some exemplary arrangements in which heat and pressure may be applied during method 800 to cure or partially cure the conductive adhesive bonding material between adjacent solar cells in the supercells. Any other suitable arrangement may be employed.

In FIG. 19A, heat and local pressure may be applied to the connecting portion (overlapping area) of one conductive adhesive bonding material 12 at one time to cure or partially cure the conductive adhesive bonding material 12. The supercell can be supported by the surface 1000 and the pressure can be mechanically applied to the connection site from above, for example by bar, pin or other mechanical contact. Heat can be applied to the connection site, for example, by heating the mechanical contact to apply a localized pressure to hot air (or other hot gas) or an infrared lamp or to the connection site.

In Fig. 19B, the arrangement of Fig. 19A can be extended to a batch process that simultaneously applies heat and local pressure to multiple connection sites within the supercell.

In Figure 19c the un-cured supercell is sandwiched between release liner 1015 and reusable thermoplastic sheets 1020 and secured to a carrier plate 1010 < / RTI > The thermoplastic material of the sheets 1020 is selected to melt at a temperature at which the super cells are cured. The release liner 1015 may be formed from, for example, glass fiber and PTFE, and is not attached to the supercell after the curing process. Preferably, the release liner 1015 is formed from materials having a coefficient of thermal expansion that matches or substantially coincides with the coefficient of thermal expansion of the solar cells (e.g., CTE of silicon). This is because if the CTE of the release liners is too different from the CTE of the solar cells, then the solar cells and the release liners will be elongated in different amounts during the curing process, It will tend to fall in the longitudinal direction. A vacuum bladder 1005 is placed over this arrangement. The uncured supercell is heated, for example, from below through the surface 1000 and the carrier plate 1010, and a vacuum is created between the bladder 1005 and the support surface 1000. As a result, the bladder 1005 applies hydrostatic pressure to the supercell through the melted thermoplastic sheets 1020.

In Fig. 19D, the un-cured supercell is carried by a moving belt 1025 punctured through an oven 1035 which heats the supercell. Vacuum applied through the perforations in the belt attracts the solar cells 10 toward the belt, thereby applying pressure to the connections between them. The conductive adhesive bonding material in these connection sites is cured as the supercell passes through the oven. Preferably, the perforated belt 1025 is formed from materials having a CTE that matches or substantially coincides with the CTE of the solar cells (e.g., the CTE of silicon). This is because, if the CTE of the belt 1025 is too different from the CTE of the solar cells, then the solar cells and the belt will be elongated in different amounts in the oven 1035, The cell will tend to fall in the longitudinal direction.

The method 800 of Figure 17 includes separate super-cell curing and lamination steps to produce intermediate super cell products. In contrast, in the method 900 shown in FIG. 18, the supercell curing and lamination steps are combined. In step 910, conventional sized solar cells (e.g., 156 mm x 156 mm or 125 mm x 125 mm) are cut and / or cut to form narrow rectangular solar cell strips. The resulting solar cell strips can optionally be tested and classified.

In step 915, the solar cell strips are arranged in the desired module configuration in a stratified structure comprising an encapsulant material, a transparent front (sun side) sheet and a back sheet. The solar cell strips are arranged as super cells with un-cured conductive adhesive bonding material disposed between overlapping portions of adjacent solar cells in the supercells (the conductive adhesive bonding material is, for example, Printing or screen printing). The interconnects are arranged to electrically interconnect the un-cured super cells with the desired configuration. The stratified structure is, for example, a first layer of encapsulant on a glass substrate, the interconnected super cells arranged below the sun side of the first layer of encapsulant. A second layer of layered encapsulant of supercells, and a back sheet on the second layer of encapsulant. Any other suitable arrangement may also be used.

In the lamination step 920, heat and pressure are applied to the layered structure to cure the conductive adhesive bonding material in the supercells and form a cured laminate structure. The conductive adhesive bond material used to bond the interconnects to the supercells can also be cured at this stage.

In one variation of the method 900, the conventional size solar cells are separated into solar cell strips, and the conductive adhesive bonding material is then applied to each individual solar cell strip. In an alternative variant, the conductive adhesive bond material is applied to the conventional size solar cells prior to the separation of the solar cells into solar cell strips. For example, a plurality of conventional size solar cells can be placed on a large template, and a conductive adhesive bonding material can then be dispersed on the solar cells, can be separated into solar cell strips with fixtures. The resulting solar cell strips can then be transported as a group and arranged in the desired module configuration as described above.

As described above, in some variations of the method 800 and the method 900, the conductive adhesive bonding material is applied to the conventional size solar cells before separating the solar cells into solar cell strips. The conductive adhesive bond material is not cured (i.e., is still " wet ") when the conventional size solar cell is separated to form the solar cell strips. In some of these variations, the conductive adhesive bonding material is applied to a conventional size solar cell (e.g., by ink jet or screen printing) and then the solar cell is cut so that a laser forms the solar cell strips. Are used in the scribe lines on the solar cell defining the positions where the solar cells are to be cut, and then the solar cells are cut along the scribe lines. In these variations, the laser power and / or distance between the scribe lines and the adhesive bonding material may be selected to avoid incidental curing or partial curing of the conductive adhesive bonding material with heat from the laser have. In other variations, a laser is used in scribe lines on conventional sized solar cells defining locations where the solar cell is cut so as to form the solar cell strips, and then the conductive adhesive bonding material is applied to the solar cell (For example, by inkjet or screen printing), after which the solar cell is cut along the scribe lines. In the latter variants, it may be desirable to implement the step of applying the electrically conductive adhesive bonding material without incidentally cutting or breaking the scribed solar cell during this step.

Referring again to Figures 20A-20C, Figure 20A schematically illustrates a side view of an exemplary device 1050 that may be used to cut scribed solar cells where a conductive adhesive bonding material was applied Scribing and application could happen in any order). In such an apparatus, a scribed conventional size solar cell 45 to which a conductive adhesive bond material has been applied is conveyed by a perforated moving belt 1060 above the portion of the curve of the vacuum manifold 1070. As the solar cell 45 passes over the upper portion of the curve of the vacuum manifold, the vacuum applied through the perforations in the belt attracts the bottom surface of the solar cell 45 relative to the vacuum manifold, Bend the battery. The curvature radius R of the curved portion of the vacuum manifold can be selected so that the solar cell 45 bent in this manner cuts the solar cell along the scribe lines. Advantageously, the solar cell 45 can be cut by this method without touching the top surface of the solar cell 45 to which the conductive adhesive bonding material was applied.

If it is desired that the cutting be started at one end of the scribe line (i.e., at one edge of the solar cell 45), this may be done, for example, by cutting one end of each scribe line, By arranging the scribe lines at an angle &thetas; with respect to the vacuum manifold so as to reach a portion of the scribe lines. As shown in FIG. 20B, for example, the solar cells may be oriented to a scribe line that is oblique to the direction of travel of the belt and a manifold that is oriented orthogonally to the direction of travel of the belt. As another example, FIG. 20C shows these scribe lines orthogonal to the direction of travel of the belt and cells that are oriented with an oblique manifold.

Any other suitable device may also be used to cut the scribed solar cells to which the conductive adhesive bonding material has been applied to form strip solar cells with previously applied conductive adhesive bonding material. Such an apparatus can use, for example, rollers to apply pressure to the upper surface of the solar cell to which the conductive adhesive bonding material is applied. In these cases, it is preferred that the rollers contact only the upper surface of the solar cell in areas where no conductive adhesive bonding material is applied.

In some variations, photovoltaic modules include supercells arranged in rows on a white or otherwise reflective backsheet, so that some of the solar radiation passing by the solar cells without being initially absorbed creates electricity The back sheet can be reflected back to the solar cells by the back sheet. The reflective backsheet can be seen through gaps between rows of supersells, which will result in a photovoltaic module that appears to have rows of parallel and bright (e.g., white) lines running across its front side . 5b, for example, parallel and dark lines between the columns of the supercells 100 may appear as white lines when the supercells 100 are arranged on a white backsheet have. This may be aesthetically unsatisfactory, for example, for some uses of the solar modules on roof tops.

21, in order to improve the aesthetic appearance of the solar module, some variations include dark stripes 1105 located at positions corresponding to the gaps between the rows of supersells arranged on the backsheet A white back sheet 1100 is used. Stripes 1105 are wide enough so that the white portions of the backsheet are not visible through the gaps between the rows of supersells in the assembled module. This reduces the visual contrast between the supersell and the backsheet when recognized by a person with normal hue. The resulting module includes a white backsheet, but may have a front surface that is similar in appearance to, for example, the modules illustrated in Figures 5A-5B. Dark stripes 1105 may be generated, for example, with lengths of dark tapes or in any other suitable manner.

As noted above, shading of individual cells within photovoltaic modules can generate " hot spots ", in which case the power of unshielded cells is lost in the shaded cell. This lost power creates local temperature spikes that can degrade the modules.

In order to minimize the potential severity of these hot spots, bypass diodes were conventionally inserted as part of the module. The maximum number of cells between the bypass diodes are set to limit the maximum temperature of the module and to prevent irreparable damage to the module. Standard layouts for silicon cells can utilize bypass diodes in all 20 or 24 cells where the number is determined by the typical breakdown voltage of the silicon cells. In certain embodiments, the breakdown voltage may be in the range of about 10V-50V. In certain embodiments, the breakdown voltage may be about 10V, about 15V, about 20V, about 25V, about 30V, or about 35V.

According to embodiments, shingling of the strips of cut solar cells into thin thermally conductive adhesives improves thermal contact between the solar cells. This enhanced thermal contact allows for a higher degree of thermal diffusion than traditional interconnect technologies. This thermal thermal diffusion design, based on shingling, enables a string of solar cells longer than twenty-four (or less) solar cells per bypass diode, which is limited to conventional designs. This mitigation of the requirement for frequent bypass diodes due to the thermal diffusion enabled by shingling according to embodiments may provide one or more advantages. For example, it is possible to create module layouts of various solar cell string lengths that are not concealed as needed to be provided for a large number of bypass diodes.

According to embodiments, thermal diffusion is implemented by maintaining physical and thermal coupling with the adjacent cells. This allows for sufficient heat dissipation through the combined connection.

In certain embodiments, such a connection is maintained at a thickness of about 200 microns or less and travels in the segmented pattern to the length of the solar cell. According to an embodiment, the connection site may be about 200 micrometers or less, about 150 micrometers or less, about 125 micrometers or less, about 100 micrometers or less, about 90 micrometers or less, about 80 micrometers or less, about 70 micrometers or less, about 50 micrometers or less, or about 25 micrometers or less.

The correct adhesive curing process may be important in ensuring that reliable connections are maintained while maintaining thickness to promote thermal diffusion between the bonded cells.

Allowing longer strings (e.g., 24 or more cells) to proceed provides flexibility in the design of solar cells and modules. For example, certain embodiments may utilize strings of cut solar cells assembled in a shingled manner. These configurations can utilize significantly more cells per module than conventional modules.

Without this thermal diffusion property, a bypass diode may be required for all 24 cells. When the solar cells are cut to 1/6, the bypass diodes per module can be six times as large as conventional modules (including three uncut cells), and up to 18 diodes as a whole can be added have. Thermal diffusion thus provides a significant reduction in the number of bypass diodes.

Furthermore, for all bypass diodes, bypass circuitry is required to complete the bypass electrical path. Each diode requires two interconnect points and a conductor that is routed to connect them to these interconnect points. This results in a complicated circuit and is a source of significant cost for standard layout costs associated with assembling solar modules.

In contrast, thermal diffusion techniques require only one bypass diode per module or even no bypass diodes. Such a configuration simplifies the module assembly process and allows simple automation mechanisms to perform the layout fabrication steps.

Avoiding the need for bypass protects all 24 cells, thereby making the cell module more easily manufactured. Complex tap-outs in the center of the module and long parallel connections for bypass circuitry are avoided. This thermal diffusion is accomplished by creating long shingled strips of cells traveling in width and / or length of the module.

In addition to providing thermal thermal diffusion, shingling according to embodiments also reduces the magnitude of the current lost in the solar cell, thereby enabling improved hot spot performance. Specifically, the amount of current lost in the solar cell during hot spot conditions depends on the cell area.

Because shingling can cut cells into smaller areas, the amount of current passing through one cell in a hot spot condition is a function of the truncated dimensions. During hot spot conditions, the current typically passes through the cell-level defect interface or the lowest resistance path, which is the crystal grain boundary. Reducing this current is advantageous and minimizes reliability failure under hot spot conditions.

22A shows a top view of a conventional module 2200 that utilizes conventional ribbon connections 2201 under hot spot conditions. Here, shading 2202 on one cell 2204 causes heat to be localized to this single cell.

In contrast, Figure 22B also shows a top view of the module utilizing thermal diffusions under hot spot conditions. Here, the shading 2250 on the cell 2522 generates heat inside the cell. However, such a row is diffused into the other electrically and thermally coupled cells 2254 in the module 2256.

It is further noted that the advantage of a reduced current loss is greatly increased for polycrystalline solar cells. These polycrystalline cells are known to operate poorly under hot spot conditions due to the high level of defect interfaces.

As indicated above, certain embodiments may employ shingling of chamfered cut-off cells. In these cases, there is a thermal diffusive advantage that is reflected along the coupling line between the adjacent cell and each cell.

This maximizes the coupling length of each overlapping connection. Since this coupling connection is the primary interface for the cell-to-cell thermal diffusion, maximizing this length can ensure that optimal thermal diffusion is obtained,

23A shows an example of a super cell string layout 2300 with chamfered cells 2302. FIG. In this configuration, the chamfered cells are oriented in the same direction, so that the conduction passages of all coupled connections are the same (125 mm).

Shading 2306 on one cell 2304 results in reverse biasing of such cells. The columns are spread to adjacent cells. The unjoined ends 2304a of the chamfered cell become hottest due to the longer conduction length to the next cell.

Figure 23B shows another example of a super cell string layout 2350 with chamfered cells 2352. [ In this configuration, the chamfered cells are oriented in different directions, with some of the long edges of the chamfered cells facing each other. This results in the conduction paths of the combined connection of two lengths of 125 mm and 156 mm.

When the cell 2354 undergoes the shading 2356, the configuration of FIG. 23B exhibits improved thermal diffusion along a longer coupling length. Figure 23B shows the thermal diffusions in the supercell thus having chamfered cells facing each other.

The foregoing discussion has focused on assembling a plurality of solar cells (which can be clipped solar cells) in a shingled manner on a common substrate. This leads to the formation of a module with a single electrical interconnect-junction box (or j-box).

However, in order to collect a sufficient amount of solar energy to be useful, the facility typically includes a number of such modules assembled together. According to embodiments, a plurality of solar cell modules may also be assembled in a shingled manner to increase the area efficiency of the array.

In certain embodiments, the module may feature an upper conductive ribbon facing the direction of solar energy and a lower conductive ribbon facing away from the direction of the solar energy.

The bottom ribbon is embedded beneath the cells. This, in turn, does not block incoming light and does not adversely affect the area efficiency of the module. In contrast, the top ribbon is exposed and can block incident light, adversely affecting efficiency.

According to embodiments, the modules themselves may be shingled such that the top ribbon is covered by a neighboring module. 24 illustrates a simplified cross-sectional view of such an arrangement 2400 in which an end portion 2401 of an adjacent module 2402 contributes to overlay the upper ribbon 2404 of the instant module 2406 do. Each module itself includes a plurality of shingled solar cells 2407.

The lower ribbon 2408 of the instant module 2406 is embedded. Which is located on the elevated side of the instant shingled module to overlap the next adjacent shingled module.

Such a shingled module configuration could also provide additional area on the module for other elements without adversely affecting the final exposed area of the module array. Examples of modular elements that may be located in overlapping regions may include, but are not limited to, junction boxes (j-boxes) 2410 and / or bus ribbons.

Figure 25 shows another embodiment of a shingled module configuration 2500. [ Here, the j-boxes 2502 and 2504 of each adjacent shimming module 2506 and 2508 become a batch 2510 in a line to implement an electrical connection therebetween. This simplifies the configuration of the array of shingled modules by removing wires.

In certain embodiments, the j-boxes could be reinforced and / or combined with additional structural standoffs. Such a configuration could produce an integrated, sloped module roof mount rack solution, where the dimensions of the junction box determine the slope. Such an implementation may be particularly useful when the array of shingled modules is mounted on a flat roof.

If the modules comprise a glass substrate and a glass cover (glass-glass modules), the modules have a total module length (and thus an exposed length L resulting from the shingling) without additional frame members, Can be shortened. This shortening could allow the modules of the tilted array to withstand the expected physical loads (e.g., an eye load limit of 5400 Pa) without breaking under the pressure.

The use of super cell structures comprising a plurality of individual solar cells assembled in a shingled manner can easily accommodate varying the length of the module to meet a particular length defined by physical load and other requirements The point is emphasized.

Figure 26 shows a diagram of the back side (light shielding) of a solar module illustrating exemplary electrical interconnection of the front (sun side) terminal electrical contacts of a shingled supercell to a junction box on the rear side of the module. The front terminal contacts of the shingled supercell may be located adjacent to an edge of the module.

26 illustrates the use of a flexible interconnect 400 that is in electrical contact with the front end contact of the supercell 100. In the illustrated example, the flexible interconnect 400 extends parallel to the ends of the supercell 100 and includes an adjacent ribbon portion 9400A and a front metallization pattern (not shown) of the end solar cell within the supercell, And fingers 9400B extending orthogonally to the ribbon portion to contact the ribbon portion (not shown). The ribbon conductor 9410, which is conductively coupled to the interconnect 9400, connects the interconnect 9400 to the electrical components on the back side of the solar module that are part of the supercell (e.g., bypass diodes and / Or module terminals) of the supercell. An insulating film 9420 may be disposed between the conductors 9410 and the edges and the backside of the supercell 100 to electrically isolate the ribbon conductor 9410 from the supercell 100.

Interconnect 400 may be selectively folded about the edge of the supercell so that ribbon portion 9400A lies behind or lies partially behind the supercell. In these cases, an electrically insulating layer is typically provided between the interconnect 400 and the edges and backsides of the supercell 100.

Interconnect 400 may be die cut from, for example, a conductive sheet and may reduce stresses that are orthogonal and parallel to the edges of the supercell resulting from a mismatch between the CTE of the interconnect and the CTE of the supercell And may be selectively patterned to increase its mechanical compliance both orthogonal and parallel to the edges of the supercell to accommodate. Such patterning may include, for example, slits, slots, or holes (not shown). The mechanical compliance of the interconnect 400 and its combination with the supercell should be sufficient for the connection to the supercell to withstand the stresses resulting from the CTE mismatch during the lamination process described in more detail below. The interconnect 400 may be coupled to the supercell with a mechanically flexible and electrically conductive coupling material, for example, as described above, for use in coupling superposed solar cells. Optionally, the electrically conductive bonding material reduces stress parallel to the edge of the supercell resulting from a mismatch between the thermal expansion coefficient of the electrically conductive bonding material or the interconnect and the thermal expansion coefficient of the supercell (E. G., At locations of separate contact pads on the end solar cell), rather than in successive lines extending substantially the length of the edge of the supercell. Corresponding thereto).

The interconnect 400 can be cut from a thin copper sheet, for example a thin copper sheet, and the supercells 100 are formed from solar cells having smaller areas than standard silicon solar cells, And may be thinner than conventional conductive interconnects when operating at low currents. For example, interconnects 400 may be formed of a copper sheet having a thickness of about 50 microns to about 300 microns. The interconnect 400 may be thin enough to accommodate the stresses orthogonal to and parallel to the edges of the supercell resulting from the mismatch between the CTE of the interconnect and the CTE of the supercell without being patterned as described above. The ribbon conductor 9410 may be formed of, for example, copper.

27 shows diagrams of the back side (shading) of a solar module illustrating exemplary electrical interconnection of two or more shingled supercells in parallel, wherein the front (sun side) terminal electrical contacts of the supercells are connected to each other And to a junction box on the rear side of the module. The front terminal contacts of the shingled super cells may be located adjacent to an edge of the module.

27 illustrates the use of two flexible interconnects 400 that are in electrical contact with the front terminal contacts of two adjacent supercells 100 as previously described. An adjacent bus 9430 running parallel to the ends of the supercells 100 is conductively coupled to the two flexible interconnects to electrically connect the supercells in parallel. This scheme can be extended to interconnecting the additional supercells 100 in parallel if desired. The bus 9430 may be formed of a copper ribbon, for example, a copper ribbon.

26, interconnects 400 and bus 9430 may be connected to each other such that ribbon portions 9400A and bus 9430 are placed behind or partially behind the super cells, Can be selectively folded around the edges of the two sides. In such cases, an electrically insulating layer is typically provided between the interconnects 400 and the edges and backsides of the supercells 100 and between the bus 9430 and the edges and backsides of the supercells 100 do.

Figure 28 shows a diagram of the back side (light shielding) of a solar module illustrating another exemplary electrical interconnection of two or more shingled supercells in parallel, wherein the front (solar side) terminal electrical contacts of the super cells Are connected to each other and to a junction box on the rear side of the module. The front terminal contacts of the shingled super cells may be located adjacent to the edge of the module.

28 illustrates the use of another exemplary flexible interconnect 9440 that is in electrical contact with the front end contact of the supercell 100. As shown in FIG. In this example, the flexible interconnect 9440 includes a front metallization pattern of the end solar cells in the supercell, in which they run parallel and adjoining ribbon portions 9440A, Fingers 9440B extending orthogonally to the ribbon portion to contact the ribbon portion and fingers 9440C orthogonal to the ribbon portion and extending behind the supercell. Fingers 9440C are conductively coupled to bus 9450. [ The bus 9450 is parallel to and adjacent to the end of the supercell 100 along the rear surface of the supercell 100 and may be similarly electrically connected so that adjacent super- May be extended to overlap the cells. A ribbon conductor 9410, which is conductively coupled to bus 9450, couples the supercells to electrical components (e.g., bypass diodes and / or module terminals in the junction box) on the back side of the solar module Electrically interconnect. Electrical insulation films 9420 are formed between the fingers 9440C and the edges and the rear surfaces of the supercell 100 and between the bus 9450 and the rear surface of the supercell 100 and between the ribbon conductors 9410 and May be provided between the rear surface of the supercell (100).

Interconnect 9440 may be formed from, for example, a conductive sheet, and may reduce or accommodate stresses that are orthogonal and parallel to the edges of the supercell resulting from a mismatch between the CTE of the interconnect and the CTE of the supercell. And may be selectively patterned to increase the mechanical compliance thereof both orthogonal and parallel to the edges of the supercell. Such patterning may include, for example, slits, slots, or holes (not shown). The mechanical compliance of the interconnect 9440 and its combination with the supercell should be sufficient for connection to the supercell to withstand the stresses resulting from CTE mismatch during the lamination process, which will be described in more detail below. Interconnect 9440 can be coupled to the supercell with a mechanically flexible and electrically conductive coupling material, as described above, for example, to be used to couple overlapping solar cells. Optionally, the electrically conductive bonding material may reduce or accommodate stress parallel to the edge of the supercell resulting from a mismatch between the thermal expansion coefficient of the electrically conductive bonding material or the interconnect and the thermal expansion coefficient of the supercell. (E.g., corresponding to the locations of the separate contact pads on the end solar cell) along the edge of the supercell, rather than with successive lines extending substantially the length of the edge of the supercell, Lt; / RTI >

Interconnect 9440 can be cut from, for example, a thin copper sheet, and supercells 100 are formed from solar cells having smaller areas than standard silicon solar cells, And may be thinner than conventional conductive interconnects when operating. For example, interconnects 9440 may be formed of a copper sheet having a thickness of about 50 microns to about 300 microns. Interconnect 9440 may be thin enough to accommodate the stresses that are orthogonal and parallel to the edges of the supercell resulting from the mismatch between the CTE of the interconnect and the CTE of the supercell without being patterned as described above. The bus 9450 may be formed of, for example, a copper sheet.

Fingers 9440C may be coupled to bus 9450 after fingers 9440B are coupled to the front of supercell 100. [ In these cases, the fingers 9440C can be bent away from the back surface of the supercell 100, for example, perpendicularly to the supercell 100 when they are coupled to the bus 9450. [ Thereafter, the fingers 9440C can be bent to advance along the rear surface of the supercell 100 as shown in Fig.

29 is a partial cross-sectional view and a perspective view of two supercells illustrating the use of a flexible interconnect between overlapping ends of adjacent supercells to electrically connect the supercells electrically in series and provide electrical connection to the junction box. do. 29A shows an enlarged view of the area of interest of FIG. 29. FIG.

FIGS. 29 and 29A illustrate two supercells 100 to provide electrical connection to one front end contact of the supers cells and to the back end contact of the other supersell, Illustrate the use of an exemplary flexible interconnect 2960 that is partially interposed between and electrically interconnecting the overlapping ends of the flexible interconnect 2960. FIG. In the illustrated example, the interconnect 2960 is obscured in the field of view from the front of the solar module by the top of the two overlapping solar cells. In another variation, adjacent ends of the two supercells are not overlapping, and a portion of the interconnect 2960 connected to one of the front end contacts of the two supercells can be seen from the front of the photovoltaic module. Optionally, in such variations, a portion of the interconnect, which otherwise would be visible from the front of the module, may be configured to reduce the visual contrast between the interconnect and the supercells when recognized by a person with normal hue. Or can be colored (e.g., can be darkened). Interconnect 2960 extends parallel to the adjacent edges of the two supercells beyond the side edges of the supercells to electrically couple the pair of supersells in parallel with pairs of similarly arranged supercells in adjacent rows Can be extended.

The ribbon conductor 2970 is configured to electrically connect adjacent ends of the two supercells to electrical components (e.g., bypass diodes and / or module terminals within the junction box) on the back side of the solar module And may be electrically coupled to the interconnect 2960 as shown. In another variation (not shown), the ribbon conductors 2970 may be electrically connected to one rear contact of the overlapping super cells away from their overlapping ends, instead of being electrically connected to the interconnect 2960 have. This configuration may also provide a hidden tap for one or more bypass diodes or other electrical components on the back side of the solar module.

Interconnect 2960 can be selectively die-cut, for example, from a conductive sheet, to provide stresses that are orthogonal and parallel to the edges of the supercells resulting from a mismatch between the CTE of the interconnects and the CTEs of the supercells And to increase the mechanical compliance thereof both orthogonal and parallel to the edges of the supercells in order to reduce or accommodate them. Such patterning may include, for example, slits, slots (as shown), or holes. The mechanical compliance of the flexible interconnect and its combination with the supercells should be sufficient for the interconnected supercells to withstand the stresses resulting from the CTE mismatch during the lamination process described in detail below. The flexible interconnect may be coupled to the supercells with a mechanically flexible and electrically conductive coupling material, for example, as described above for use in coupling superposed solar cells. Optionally, the electrically conductive bonding material reduces stress parallel to the edges of the supercells resulting from a mismatch between the thermal expansion coefficient of the electrically conductive bonding material or the interconnect and the thermal expansion coefficient of the supercells Cells may be located at distinct locations along the edges of the supercells rather than with successive lines extending substantially the length of the edges of the supercells. Interconnect 2960 can be cut from, for example, a thin copper sheet.

Embodiments include one or more of the features described in U.S. Published Patent Application No. 2014/0124013 and U.S. Publication No. 2014/0124014, the disclosures of which are hereby incorporated by reference in their entirety for all purposes .

Disclosed herein are high efficiency solar modules comprising silicon solar cells arranged in a shingled manner and electrically connected in series to form super cells, wherein the super cells are arranged in columns that are physically parallel to the solar module . The supercells may, for example, have basically lengths that span the entire length or width of the photovoltaic module, or two or more super cells may be arranged end to end in a row. This arrangement obscures the electrical interconnections of the solar cell to the solar cell and thus can be used to create a visually appealing photovoltaic module with no or little contact between adjacent series connected solar cells.

The supercell can comprise any number of solar cells, including, for example, at least nineteen solar cells in some embodiments, and in certain embodiments greater than or equal to 100 silicon solar cells. Electrical contacts at intermediate locations along the supercell may be desired to electrically divide the supercell into two or more serially connected segments while maintaining a physically continuous supercell. In the present specification, such electrical connections are provided in one or the other of the supercells in order to provide electrical tapping points that are hidden in the field of view from the front of the solar module and thus referred to herein as " hidden taps & Arrangements for the rear contact pads of silicon solar cells are disclosed. The hidden tab is an electrical connection between the back of the solar cell and the conductive interconnect.

It is also contemplated herein that flexible interconnects for electrically interconnecting frontal super-cell terminal contact pads, rear super-cell terminal contact pads, or hidden tab contact pads to other solar cells or other electrical components within the solar module Use is started.

The use of electrically conductive adhesives to bond flexible interconnects to the super cells with mechanically stiff bonds that force the flexible interconnects to accommodate mismatches in thermal expansion between the flexible interconnects and the super cells And electrically coupled adjacent solar cells to each other in a supercell to provide mechanically flexible and electrically conductive bonds to accommodate the thermal expansion mismatch between the super cells and the glass front sheet of the solar module The use of a conductive adhesive is disclosed. This can avoid damage to the photovoltaic module that otherwise could occur as a result of a thermal cycle of the photovoltaic module.

As further described below, electrical connections to the hidden tap contact pads electrically connect segments of the supercell to corresponding segments of one or more supercells in adjacent columns, and / But can be used to provide electrical connections to the photovoltaic module circuitry for a variety of applications including power optimization (e.g., bypass diodes, AC / DC microinverters, DC / DC converters) have.

The use of hidden tabs as described above may be combined with the hidden cell-to-cell connections to substantially improve the aesthetic appearance of the solar module by providing all the rearward appearance of the solar module, A greater portion of the surface area of the module can be filled with active areas of the solar cells to increase the efficiency of the solar module.

Referring now to the drawings, for a more detailed understanding of the photovoltaic modules described herein, FIG. 1 illustrates a photovoltaic cell 100 having end portions of adjacent solar cells that are overlapped and electrically connected to form the supercell 100, Sectional view of a string of series-connected solar cells 10 arranged in a row. Each solar cell 10 includes a semiconductor diode structure and electrical contacts for the semiconductor diode structure in which the current generated in the solar cell 10 when illuminated by light can be provided to an external load.

In the examples described herein, each solar cell 10 is a rectangular crystalline silicon solar cell having front (sun side) and rear (shading side) metallization patterns that provide electrical contact to opposite sides of the np junction , The front metallization pattern is disposed on an n-type conductive semiconductor layer, and the rear metallization pattern is disposed on a p-type conductive semiconductor layer. However, other material systems, diode structures, physical dimensions, or electrical contact arrangements may be used where appropriate. For example, the front (sun side) metallization pattern may be disposed on a p-type conductive semiconductor layer, and the rear (light shielding) metallization pattern may be disposed on an n-type conductive semiconductor layer have.

Referring again to FIG. 1, adjacent solar cells 10 in the supercell 100 are electrically conductive (not shown) electrically connecting the front metallization pattern of one solar cell to the back metallization pattern of an adjacent solar cell Are bonded directly to each other in a region where they are overlapped by the bonding material. Suitable electrically conductive bonding materials may include, for example, electrically conductive adhesives and electrically conductive adhesive films and adhesive tapes, and conventional solders.

Figs. 31A and 31A illustrate a cross-sectional view of the super-cells of the two super cells 100 by providing an electrical connection to one front-end contact of the supersells and a rear-end contact of the other supersell, Illustrate the use of an exemplary flexible interconnect 3160 partially interposed between and electrically interconnected with each other. In the illustrated example, the interconnect 3160 is hidden from view from the front of the solar module by the top of the two overlapping solar cells. In another variation, the adjacent ends of the two supercells are not overlapping, and a portion of the interconnect 3160, which is connected to one front end contact of the two supers cells, can be seen from the front of the photovoltaic module. Optionally, in these variations, a portion of the interconnect, which otherwise would be visible from the front of the module, may be covered by a cover to reduce the visible contrast between the interconnect and the super- Or may be colored (e.g., darkened). Interconnect 3160 may extend parallel to the adjacent edges of the two supercells beyond the side edges of the supercells to connect the pairs of supersells electrically in parallel with a suitably arranged pair of supersells in adjacent rows Can be extended.

The ribbon conductor 3170 is configured to electrically connect adjacent ends of the two supercells to electrical components (e.g., bypass diodes and / or module terminals within the junction box) on the back side of the solar module And may be electrically connected to the interconnect 3160 as shown. In another variation (not shown), the ribbon conductor 3170 is electrically connected to one rear contact of the overlapping super cells away from their overlapping ends, instead of being electrically coupled to the interconnect 3160 . This arrangement may also provide a hidden tab for one or more bypass diodes or other electrical components on the back side of the solar module.

FIG. 2 illustrates an exemplary rectangular photovoltaic module 200 including six rectangular supercells 100 each having a length approximately equal to the length of the long sides of the photovoltaic module. The supercells are arranged in six parallel rows with their long sides oriented parallel to the long sides of the module. A similarly configured solar module may contain more or fewer rows of supercells of this side length than the case shown in this example. In other variations, the supercells can have a length approximately equal to the length of the short side of each rectangular photovoltaic module, and are parallel with their long sides oriented parallel to the short sides of the module They can be arranged in one row. In still other arrangements, each column may comprise two or more super cells connected electrically in series. The modules may have, for example, short sides having a length of about 1 meter and long sides having a length of, for example, about 1.5 meters to about 2.0 meters. Any other suitable shapes (e.g., square) and dimensions for the solar modules may also be used.

In this example, each supercell includes 72 rectangular solar cells each having a width approximately equal to 1/6 of the width of a 156 mm square or pseudo-square wafer. Any other suitable number of rectangular solar cells that are any other suitable dimensions may also be used.

Solar cells having long narrower aspect ratios and areas smaller than those of a standard 156 mm x 156 mm solar cell are advantageously employed to reduce I ² R resistive power losses in the solar cell modules described herein as illustrated . In particular, the reduced area of solar cells 10 compared to silicon solar cells of the standard size reduces the current generated in the solar cell and reduces the resistance loss in the solar cell and the series- .

The hidden tabs for the back surface of the supercell can be made using, for example, electrical interconnects that are conductively connected to one or more hidden tab contact pads located at the edge portions of the backside metallization pattern of the solar cell . Optionally, the hidden tabs extend substantially along the entire length of the solar cell (orthogonal to the long axis of the supercell), and a plurality of hidden tabs distributed along the length of the solar cell within the back- And may be implemented using an interconnect that is conductively coupled to the contact pads.

31A illustrates an exemplary solar cell rear metallization pattern 3300 suitable for use with edge-connected hidden taps. The metallization pattern includes a continuous aluminum electrical contact 3310, a plurality of silver contact pads 3315 arranged in parallel to adjacent edges of the long side of the back side of the solar cell, And silvered tab contact pads 3320 arranged parallel to one adjacent edge of the sides. When the solar cell is placed in the supercell, the contact pads 3315 overlap and are directly coupled to the front surface of the adjacent rectangular solar cell. The interconnect may be conductively coupled to one or the other of the hidden tab contact pads 3320 to provide a hidden tab to the supercell (two such interconnects may be employed to provide two hidden tabs if desired have).

In the arrangement shown in Figure 31a, the current flow to the hidden tab is generally parallel to the long sides of the solar cell through the back-side cell metallization to the interconnect collection point (contact 3320). To enable current flow along this path, the back metal sheet resistance is preferably less than or equal to about 5 ohms per square, or less than or equal to about 2.5 ohms per square.

FIG. 31B shows another exemplary solar cell back metallization pattern 3301 suitable for use with hidden taps employing bus-like interconnects along the length of the back surface of the solar cell. The metallization pattern includes a continuous aluminum electrical contact 3310, a plurality of silver contact pads 3315 arranged parallel and adjacent to the edge of the long side of the back surface of the solar cell, And a plurality of silvered tapped contact pads 3325 arranged in parallel rows and approximately centered on the back surface of the solar cell. An interconnect substantially extending over the entire length of the solar cell may be conductively coupled to the hidden tab contact pads 3325 to provide a hidden tab for the supercell. The current flow to the hidden tab is primarily through the bus-like interconnect, making the conductivity of the back metallization pattern less critical to the hidden tab.

The location and number of the hidden tab contact pads on which the hidden tab interconnect is coupled on the back surface of the solar cell affects the length of the current path through the back metallization of the solar cell, the hidden tab contact pads, and the interconnect . Accordingly, the placement of the hidden tab contact pads may be selected to minimize resistance to current collection through the current path and the hidden tab interconnect. In addition to the arrangements shown in Figures 31A-31B (and subsequently discussed in Figure 31C), suitable HILT contact pad arrangements may include, for example, a two-dimensional array and columns running orthogonal to the long axis of the solar cell . In the latter case, the rows of hidden tab contact pads may be located, for example, adjacent a short edge of the first solar cell.

FIG. 31C shows another exemplary solar cell back metallization pattern 3303 suitable for use with edge-connected hidden taps or hidden taps employing a bus-like interconnect along the length of the back surface of the solar cell. The metallization pattern includes successive copper contact pads 3315 arranged parallel and adjacent to the edges of the long side of the back surface of the solar cell, a plurality of copper fingers 3315 connected to and extended orthogonally from the contact pads 3315 3317) and a continuous copper bus hidden tap contact pad 3325 running parallel to the long sides of the solar cell and approximately centered on the back surface of the solar cell. The edge-connected interconnect may be coupled to the end of the copper bus 3325 to provide a hidden tab to the supercell (two such interconnects may be coupled to one of the copper buses 3325 to provide two hidden tabs if desired Lt; / RTI > Optionally, an interconnect that travels substantially the entire length of the solar cell may be conductively coupled to the copper bus 3325 to provide a hidden tab to the supercell.

The interconnect employed to form the hidden tab may be coupled to the hidden tab contact pad in the back metallization pattern by soldering, welding, conductive adhesive, or any other suitable method. For metallization patterns employing silver pads as illustrated in Figures 31A-31B, the interconnect may be formed of, for example, tin-coated copper. Another approach is to make the hidden tab directly to the aluminum backside contact 3310 with an aluminum conductor forming an aluminum to aluminum bond, which may be formed, for example, by electrical or laser welding, brazing, or a conductive adhesive. In certain embodiments, the contacts may include annotations. In the foregoing cases, the back metallization of the solar cell may be lacking in the silver contact pads 3320 (FIG. 31A) or 3325 (FIG. 31B), but an aluminum interconnect such as an edge- (Or tin) contacts 3310 at locations corresponding to these contact pads.

The differential thermal expansion between the hidden tab interconnects (or interconnects to the front-side super cell terminal contacts) and the silicon solar cells and the resulting stress on the solar cell and the interconnect may degrade the performance of the solar module Cracking and other forms of failure. Thus, the hidden tabs and other interconnects are preferably configured to accommodate such differential expansion without significant stress evolution. The interconnects may be formed of, for example, materials with high ductility (e.g., soft copper, very thin copper sheets) or materials with low coefficients of thermal expansion (e.g., Kovar, Invar Invar) or other low thermal expansion iron-nickel alloys), or formed of materials having a thermal expansion coefficient that approximately coincides with that of silicon, or may be formed as a slit that receives differential thermal expansion between the interconnect and the silicon solar cell Such geometric thermal expansion features in planes such as trenches, slots, holes, or truss structures and / or such differentials, such as kinks, jogs, or dimples, Out-of-plane geometric features that accommodate thermal expansion can be employed to provide stress and thermal expansion relief. Portions of the interconnects that are coupled to the hidden tab contact pads (or coupled to the supercell front or rear terminal contact pads, as described below) may be formed, for example, to increase the flexibility of the interconnects to about 100 microns Less than about 50 microns, less than about 30 microns, or less than about 25 microns.

Referring again to Figs. 7A, 7B-1 and 7B-2, these figures are designated by reference numerals 400A-400U and employ stress-relieving geometric features and their use as interconnects for hidden taps And illustrate some exemplary interconnect configurations that may be suitable for electrical connections to the front or rear super cell terminal contacts. These interconnects typically have a length approximately equal to the length of the long sides of the rectangular solar cell to which they are coupled, but they may have any other suitable length. The exemplary interconnects 400A-400T shown in Fig. 7A employ stress relief features in various planes. The exemplary interconnect 400U shown in the (xy) planes in FIG. 7b-1 and the planar (xz) planes in FIG. 7b-2 includes benders 3705). The bends 3705 reduce the apparent tensile stiffness of the metal ribbon. The bends cause the ribbon material to bend locally instead of only extending when the ribbon material is under tension. For thin ribbons, this can significantly reduce the apparent tensile stiffness to, for example, 90% or more. The exact amount of apparent tensile stiffness reduction depends on several factors, including the number of bends, the geometry of the bends, and the thickness of the ribbon. Interconnects can also employ in-plane and out-of-plane stress relief features in combination.

Figures 37A-1 through 38B-2 illustrate some examples that may be suitable for use as intra-plane and / or out-of-plane stress-relieving geometric features discussed further below and for use as edge-connected interconnects for hidden taps Lt; / RTI > interconnect configurations.

A hidden tab interconnect bus may be utilized to reduce or minimize the number of conductor processes required to connect each hidden tab. This approach connects the adjacent supercell hidden tap contact pads to each other using a hidden tab interconnect (the electrical connections are typically positive to negative or negative to negative, i. E., The same polarity at each end).

For example, FIG. 32 shows a schematic cross-sectional view of a solar cell 10 substantially progressing along the entire length of the solar cell 10 in the first supercell 100 and electrically connected to the hidden tap contact pads 3325 arranged as shown in FIG. The first hidden tab interconnect 3400 and the hidden tab contact pads 3325 that are advanced to the full length of the corresponding solar cell in the supercell 100 in the adjacent row and are arranged as shown in Figure 31B Lt; RTI ID = 0.0 > 3400 < / RTI > The two interconnects 3400 are arranged together and selectively adjacent or overlapping and may be conductively coupled to each other or otherwise electrically connected to form a bus interconnecting two adjacent supercells. This scheme may extend over additional columns (e.g., all the columns) of the supercells to form parallel segments of the solar module including segments of several adjacent supercells if desired. 33 shows a perspective view of a part of the supercell from Fig. 32. Fig.

Figure 35 shows that super cells in adjacent columns traverse the gap between the super cells and conductively connect to the hidden tab contact pads 3320 on one supercell and other hidden tab contact pads 3320 on the other supercell Lt; RTI ID = 0.0 > 32A, < / RTI > Figure 36 illustrates a cross-sectional view of a short interconnect interconnecting the gaps between two super cells in adjacent rows, the end of the central copper bus portion of the back metallization on one supercell, and the center copper bus portion Lt; RTI ID = 0.0 > 31c < / RTI > In both cases, the interconnect schemes may extend over additional columns (e.g., all the columns) of the supercells to form parallel segments of the photovoltaic module, including segments of some adjacent supercells if desired have.

Figures 37A-1 through 37F-3 illustrate (xy) and out-of-plane (xz) plots in the plane of exemplary shorthold tab interconnects 3400 that include planar stress relief features 3405 Wherein the xy plane is a plane of the solar cell back metallization pattern. In the examples of FIGS. 37A-1 through 37E-2, each interconnect 3400 includes taps 3400A, 3400B located on opposite sides of the stress relief features in one or more planes. The stress relieving features in the exemplary planes include arrangements of one, two or more hollow diamond shapes, zig-zags, and arrangements of one, two, or more slots.

The term " in plane stress relieving feature ", as used herein, may also refer to the thickness or ductility of the interconnect or a portion of the interconnect. For example, the interconnect 3400 shown in Figures 37f-1 through 37f-3 may be formed of a thin, straight copper ribbon of a straight, straight length, for example less than or equal to about 100 microns, , Less than or equal to about 50 microns, less than or equal to about 30 microns, less than or equal to about 25 microns, and a thickness T in the xy plane. The thickness T may be, for example, about 50 microns. The length L of the interconnect can be, for example, about 8 centimeters (cm), and the width W of the interconnect can be, for example, about 0.5 cm. Figures 37f-3 and 37f-1 illustrate front and back views of the interconnect, respectively, in the x-y plane. The front surface of the interconnect faces the rear surface of the solar module. Because the interconnect can traverse a gap between two parallel rows of supercells in a solar module, a portion of the interconnect can be seen through the gap from the front of the solar module. Optionally, this visible portion of the interconnect may be made black, for example coated with a black polymer layer, to reduce its visibility. In the illustrated example, the center portion 3400C of the front surface of the interconnect having a length L2 of about 0.5 cm is coated with a thin black polymer layer. Typically, L2 is greater than or equal to the width of the gap between supercell rows. The black polymer layer may have a thickness of, for example, about 20 microns. Such thin copper ribbon interconnects may also selectively employ in-plane or out-of-plane stress relief features as described above. For example, the interconnect may include out-of-plane bends that relieve stresses as described above with respect to Figures 7B-1 and 7B-2.

38A-1 through 38B-2 illustrate (x-y) and out-of-plane (x-z) plan views of exemplary short hidden tab interconnects 3400 that include out-of-plane stress relief features 3407. In the above examples, each interconnect 3400 includes taps 3400A, 3400B located on opposite sides of one or more off-plane stress relief features. Exemplary out-of-plane stress relief features include arrangements of one, two or more bends, kinks, dimples, jogs, or ridges.

The types and arrangements of stress relieving features illustrated in Figures 37A-1 through 37E-2 and Figures 38A-1 through 38B-2 and the interconnect ribbon thicknesses discussed above for Figures 37F-1 through 37F- And may be employed in interconnects that are coupled to long hidden tab interconnects as described above and super cell back or front terminal contacts where appropriate. The interconnect may include both in-plane and out-of-plane stress relief features in combination. The in-plane and out-of-plane stress relief features are designed to reduce or minimize deformation and stress effects on the solar cell junction, thereby producing highly reliable and elastic electrical connections.

39A-1 and 39A-2 illustrate exemplary configurations for short hidden tab interconnects with cell contact pad alignment and supercell edge alignment features to enable automation, ease of manufacture, and placement accuracy. Figures 39b-1 and 39b-2 illustrate an exemplary configuration for short hidden tab interconnects having unsymmetrical tap lengths. These asymmetric interconnects can be used with opposite orientations to avoid overlapping of conductors that run parallel to the long axis of the supercells (see discussion of FIGS. 42A-42B below).

The hidden tabs as described herein may form the necessary electrical connections within the module layout to provide the desired module electrical circuit. The hidden tab connections may be, for example, 12, 24, 36 or 48 solar cells along the supercell, or any other suitable spacing. The spacing between hidden taps can be determined based on the application.

Each supercell typically includes a front terminal contact at one end of the supercell and a rear terminal contact at the other end of the supercell. In variations where the supercell traverses the length or width of the photovoltaic module, these terminal contacts are located adjacent the opposite edges of the photovoltaic module.

The flexible interconnect may be conductively coupled to the front or rear terminal contacts of the supercell to electrically connect the supercell to other solar cells or to electrical components within the module. For example, FIG. 34A shows a cross-sectional view of an exemplary solar module having an interconnect 3410 that is conductively coupled to the rear terminal contact at the end of the supercell. The backside terminal contact interconnect 3410 may be formed to increase the flexibility of the interconnect, for example, to less than or equal to about 100 microns, less than or equal to about 50 microns, or less than or equal to about A thin copper ribbon or foil having a thickness of less than or equal to 30 microns, or less than or equal to about 25 microns, and the like. The interconnect may have a width, for example, greater than or equal to about 10 mm, in a plane of the surface of the solar cell in a direction perpendicular to the flow of current through the interconnect to improve conduction. As illustrated, the backside terminal contact interconnect 3410 may be positioned behind the solar cells without a portion of the interconnect extending beyond the supercell in a direction parallel to the supercell array.

Similar interconnects can be used to connect the front-terminal contacts. Optionally, to reduce the area of the front surface of the solar module occupied by the front-terminal interconnects, the front-surface interconnect includes a thin flexible portion directly coupled to the supercell and a thicker portion providing a higher conductivity can do. This arrangement can reduce the width of the interconnect needed to implement the desired conductivity. The thicker portion of the interconnect may be, for example, an integral part of the interconnect, or it may be a separate piece coupled to a thinner portion of the interconnect. For example, FIGS. 34B-34C show cross-sectional views of an exemplary interconnect 3410, each of which is conductively coupled to the front terminal contact at the end of the super cell. In both instances, the thin, flexible portion 3410A of the interconnect coupled directly to the supercell is less than or equal to about 100 microns, less than about 50 microns, or less than about 50 microns A thin copper ribbon or foil having a thickness of less than or equal to 30 microns, or less than or equal to about 25 microns. The thicker copper ribbon portion 3410B of the interconnect is coupled to the thin portion 3410A to improve the conductivity of the interconnect. In Fig. 34B, an electrically conductive tape 3410C on the back side of the thin interconnect portion 3410A couples the thin interconnect portion to the supercell and thick interconnect portion 3410B. In Figure 34C, the thin interconnect portion 3410A is bonded to the thick interconnect portion 3410B with an electrically conductive adhesive 3410D and bonded to the super cell with an electrically conductive adhesive 3410E. The electrically conductive adhesives 3410D and 3410E may be the same or different. The electrically conductive adhesive 3410E may be, for example, solder.

The photovoltaic modules described herein may include a laminate as shown in Figure 34A having one or more encapsulant materials 3610 interposed between the super cells and the transparent front sheet 3620 and the back sheet 3630. [ Structure. The transparent front sheet may be, for example, glass. The backsheet can also be glass or any other suitable material. Additional strips of encapsulant may be disposed between the back terminal interconnect 3410 and the back surface of the supercell as illustrated.

As noted above, hidden tabs provide a modular aesthetic that is " all black. &Quot; Because these connections are typically made of highly reflective conductors, they could normally exhibit high contrast to the attached solar cells. However, by forming connections on the back side of the solar cells and also routing other conductors in the solar module circuit behind the solar cells, various conductors are hidden in the field of view. This allows multiple connection points (hidden taps) while still retaining the " all black " appearance.

Hidden tabs can be used to form various module layouts. In the example of Fig. 40 (physical layout) and Fig. 41 (electric circuit diagram), the photovoltaic module includes six super cells each proceeding with the lengths of the modules. The hidden tap contact pads and short interconnects 3400 divide each supercell by a third and electrically connect the adjacent supercell segments electrically in parallel, thereby forming three groups of supercell segments connected in parallel. Each group is connected in parallel to another of bypass diodes 1300A-1300C (embedded) integrated in the laminate configuration of the module. The bypass diodes may be located, for example, directly behind super cells or between super cells. The bypass diodes may be located along the centerline of the photovoltaic module, for example approximately parallel to the long sides of the photovoltaic module.

In the example of Figures 42A-42B (also corresponding to the electrical circuit diagram of Figure 41), the solar modules include six super cells each progressing in length of the module. The hidden tap contact pads and short interconnects 3400 divide each supercell by a third and electrically connect the adjacent supercell segments electrically in parallel, thereby forming three groups of supercell segments connected in parallel. Each group is connected in parallel to the other of the bypass diodes 1300A-1300C via bus connections 1500A-1500C, which are located after the super cells and connect the hidden tap contact pads and short interconnects to the junction box And to the bypass diodes located on the backside of the module.

42B provides a detailed view of the connection of the short hidden tab interconnects 3400 and the conductors 1500B and 1500C. As shown, these conductors do not overlap each other. In the illustrated example, this enables the use of asymmetric interconnects 3400 arranged in opposite directions. An alternative approach to avoid overlapping of the conductors is to employ a first symmetrical interconnect 3400 with one length of tabs and a second symmetrical interconnect 3400 with another length of tabs.

In the example of FIG. 43 (also corresponding to the electrical circuit diagram of FIG. 41), the photovoltaic module includes a plurality of photovoltaic modules, with the exception that the hidden tab interconnects 3400 form successive busses that travel substantially the full width of the photovoltaic module And is configured similar to that shown in Fig. 42A. Each bus can be a single long interconnect 3400 that is conductively coupled to the back metallization of each supercell. Alternatively, the bus may comprise multiple individual interconnects, each traversing a single super cell and electrically coupled to or otherwise electrically interconnected to each other as described above with respect to FIG. Figure 43 also illustrates supercell terminal interconnects 3410 that form a continuous bus along one side end of the solar module to electrically connect the front terminal contacts of the supercelles and electrically connect the back terminal contacts of the supercelles electrically And additional supercell terminal interconnects 3410 that form a continuous bus along the opposite end of the solar module to connect.

The exemplary solar module of Figs. 44A-44B also corresponds to the electrical circuit diagram of Fig. This example employs short hidden tab interconnects 3400 as in FIG. 42A and interconnects 3410 that form continuous busses for the supercell front and rear terminal contacts as in FIG.

In the example of Figs. 47A (physical layout) and Fig. 47B (electric circuit diagram), the photovoltaic module includes six super cells each proceeding to the full length of the photovoltaic module. Hide tab contact pads and short interconnects 3400 divide each supercell into two thirds of the length and one third of the length. Interconnects 3410 (as shown in the figure) at the lower edge of the photovoltaic module interconnect the three columns on the left in parallel with each other, interconnecting the three columns on the right in parallel with one another, The three columns are interconnected in series with the three columns to the right. This arrangement forms three groups of parallel connected super cell segments, each group having a length of two thirds of the length of the super cell. Each group is connected in parallel with the other of the bypass diodes 2000A-2000C. This arrangement provides about twice the voltage and about half the current than could be provided by the same supercells if they were instead electrically connected as shown in Fig.

As described above with reference to Figure 34A, the interconnects coupled to the supercell backside terminal contacts can be placed entirely behind the supercells and can be hidden in the field of view from the front (sun) sides of the photovoltaic module. The interconnects 3410 coupled to the supercell front-end contacts may be connected to the super-cell front-end contacts as they extend beyond the ends of the supercells (e.g., as in Figure 44a) It can be seen from the back view of the solar module (e.g., as in FIG. 43) because it is folded.

The use of hidden taps allows grouping of small numbers of solar cells per bypass diode. In the examples of Figures 48A-48B (each showing a physical layout), the photovoltaic modules include six super cells each progressing to the length of the module. The hidden tap contact pads and short interconnects 3400 divide each supercell into fifths and electrically connect the adjacent supercell segments electrically in parallel, thereby forming five groups of supercell segments connected in parallel. Each group is connected in parallel with another of the bypass diodes 2100A-2100E integrated (embedded) into the laminate configuration of the module. The bypass diodes may be located, for example, directly behind the super cells or between the super cells. The supercell terminal interconnects 3410 form a continuous bus along one end of the photovoltaic module to electrically connect the front terminal contacts of the supergelles, and additional supercell terminal interconnects 3410 form a bus, To form a continuous bus along the opposite end of the solar module to electrically connect the rear terminal contacts of the photovoltaic module. 48A, a single junction box 2110 is electrically connected to the front and rear terminal interconnect busses by conductors 2115A and 2115B. However, since there are no diodes in the junction box, the long junction conductors 2215A, 2115B can optionally be removed (Fig. 48B), and the single junction box 2110 can be, for example, Can be replaced by two unipolar (+ or -) junction boxes 2110A-2110B located at opposing edges. This eliminates the resistive losses in the long return conductors.

Although the examples described herein use taps that help to electrically divide each supercell into three or five groups of solar cells, these examples are intended to be illustrative and not restrictive. More generally, the hidden taps may be used to electrically split the supercell into more or less groups of solar cells and / or more or fewer groups per solar cell than are illustrated.

In normal operation of the photovoltaic modules described herein without a bypass diode in a forward-biased and conducting state, less current flows or no current flows through any hidden tap contact pads. Instead, current flows through the cell-to-cell conductive bonds formed between adjacent overlapping solar cells over the length of each supercell. In contrast, Figure 45 shows current flow when a portion of the photovoltaic module is bypassed through a forward biased bypass diode. As indicated by the arrows, in this example, the current in the leftmost supercell flows along the supercell until it reaches the tapped solar cell, and then the back metallization of the solar cell, Through a contact pad (not shown), an interconnect 3400, to a second solar cell in the adjacent supercell, to another hidden tab contact pad (not shown) in which the interconnect is coupled on the second solar cell, 2 solar cells through additional hidden tap contact pads, bus interconnects 1500 through interconnects and solar cell back metallization, and flows to reach the bypass diode. The current flow through other supercells is similar. As is evident from the illustration, under these circumstances the hidden tap contact pads are capable of conducting current from two or more columns of supercells so that a current greater than the current generated in any single solar cell in the module You can evangelize.

A bus bar, contact pad, or other light blocking element (other than overlapping portions of the front metallization fingers or adjacent solar cells) is present on the front surface of the solar cell, which is typically opposite the hidden tab contact pad I never do that. Accordingly, when the hidden tap contact pad is formed of silver on the silicon solar cell, the photovoltaic efficiency of the solar cell in the area of the hidden tap contact pad is lower than that of the back electrostatic field preventing the silver contact pad from rearward charge recombination Can be reduced if the effect is reduced. To avoid this loss of efficiency, most solar cells in a supercell typically do not include hidden tab contact pads (e.g., in some variations, those requiring a hidden tab contact pad for the bypass diode circuit Only solar cells will include such hidden tab contact pads). Further, in order to match the current generation in the solar cells including the hidden tap contact pads with the current generation in the solar cells lacking the hidden tap contact pads, the solar cells including the hidden tap contact pads Can have a larger condensing area than solar cells lacking hidden tab contact pads.

The individual hidden tab contact pads may have rectangular dimensions, for example less than or equal to about 5 mm and less than or equal to about 2 mm.

Photovoltaic modules undergo a temperature cycle as a result of temperature changes during the environment in which they are installed, during operation, and during testing. 46A, during this temperature cycle, the thermal expansion mismatch between the silicon solar cells in the supercell and the other parts of the module, for example, the glass front sheet of the module, Resulting in relative motion along the long axes of the supercell rows between different portions. This discrepancy tends to elongate or compress the supercells and may damage the conductive bonds between the solar cells or the solar cells in the supercells. Similarly, as shown in FIG. 46B, the thermal expansion mismatch between the interconnect and the solar cell coupled to the solar cell during a temperature cycle may cause a relative motion between the interconnect and the solar cell in a direction perpendicular to the rows of the super cells . This discrepancy can modify and damage the solar cells, the interconnect, and the conductive bond therebetween. This may occur for interconnects coupled to hidden tab contact pads and for interconnects coupled to the supercell front or back terminal contacts.

Similarly, the periodic mechanical load of a solar module may be influenced by localized shear forces (e.g., shear) during bonding between the solar cell and the interconnect, in intercellular bonds in the supercell, for example during transport, or in climates force. These shearing forces can also damage the solar module.

In order to avoid problems arising from relative movement between the supercelles along the long axis of the supercell strings and other parts of the solar module, the conductive adhesive used to couple adjacent and overlapping solar cells together Providing supercomputers with mechanical compliance between the superposed solar cells so that the super cells and the modules in a direction parallel to the columns for a temperature range of about -40 DEG C to about 100 DEG C without damaging the solar modules, May be selected to form a flexible conductive bond 3515 (Fig. 46A) that accommodates the thermal expansion mismatch between the glass front sheets of the glass front sheet. The conductive adhesive may be applied at standard test conditions (e.g., 25 DEG C), for example, less than or equal to about 100 megapascals (MPa), less than or equal to about 200 MPa, less than or equal to about 300 MPa, Less than or equal to about 400 MPa, less than or equal to about 500 MPa, less than or equal to about 600 MPa, less than or equal to about 700 MPa, less than or equal to about 800 MPa, less than or equal to about 900 MPa, May be selected to form conductive bonds having a shear modulus that is less than or equal to the shear modulus. The flexible conductive bonds between overlapping and adjacent solar cells can accommodate differential motion, e.g., greater than or equal to about 15 microns between each cell and the glass front sheet. Suitable conductive adhesives may include, for example, ECM 1541-S3, available from Engineered Conductive Materials LLC.

In order to enhance the flow of heat along the supercell, which reduces the risk of damaging the solar module from hot spots that may be caused during operation of the solar module, the solar cell in the module may experience shading or some other cause result , The conductive bonds between adjacent overlapping solar cells may have a thickness of, for example, less than or equal to about 50 microns perpendicular to the solar cells, and a thickness of about 1.5 W / (Meter-K). ≪ / RTI >

The conductive adhesive used to couple the interconnect to the solar cell in order to avoid problems arising from relative movement between the interconnect and the solar cell to which it is attached is characterized in that the interconnect is formed at a temperature of about -40 < 0 > C To about 180 < 0 > C, to form a conductive bond between the solar cell and the interconnect that is stiff enough to accommodate the thermal expansion mismatch between the solar cell and the interconnect. Such conductive adhesives may be used in a wide variety of applications including, for example, greater than or equal to about 1800 MPa, greater than or equal to about 1900 MPa, greater than or equal to about 2000 MPa, greater than or equal to about 2100 MPa, Greater than or equal to about 2200 MPa, greater than or equal to about 2300 MPa, greater than or equal to about 2400 MPa, greater than or equal to about 2500 MPa, greater than or equal to about 2600 MPa, greater than or equal to about 2700 MPa, Greater than or equal to about 2800 MPa, greater than or equal to about 2900 MPa, greater than or equal to about 3000 MPa, greater than or equal to about 3100 MPa, greater than or equal to about 3200 MPa, greater than or equal to about 3300 MPa, Greater than or equal to about 3500 MPa, greater than or equal to about 3600 MPa, greater than or equal to about 3700 MPa, greater than or equal to about 3800 MPa, greater than or equal to about 3900 MPa, or greater than or equal to about 4000 MPa Or shear elasticity Can be selected to form a conductive bond having a modulus. In such variations, the interconnect can withstand thermal expansion or contraction of the interconnect, for example, greater than or equal to about 40 microns. Suitable conductive adhesives may include, for example, Hitachi CP-450 and solders.

Accordingly, the conductive bonds between the superposed and adjacent solar cells in the supercell can utilize a conductive adhesive different from the conductive bonds between the supercell and the flexible electrical interconnect. For example, the conductive connection between the supercell and the flexible electrical interconnect may be formed of solder, and the conductive bonds between the overlapping and adjacent solar cells may be formed of a conductive adhesive rather than solder. In some variations, the conductive adhesives can all be cured in a single process step, for example in a process window of about 150 ° C to about 180 ° C.

The foregoing discussion has focused on assembling a plurality of solar cells (which can be cut solar cells) in a shingled manner on a common substrate. This leads to the formation of modules.

However, in order to collect a sufficient amount of solar energy to be useful, the facility usually has a number of such modules assembled together themselves. According to embodiments, a plurality of solar cell modules may also be assembled in a shingled manner to increase the area efficiency of the array.

In a particular embodiment, the module may be characterized as a top conductive ribbon facing the direction of solar energy and a bottom conductive ribbon facing away from the direction of the solar energy.

The bottom ribbon is embedded beneath the cells. This, in turn, does not block incoming light and does not adversely affect the area efficiency of the module. In contrast, the top ribbon is exposed and can block the incoming light and adversely affect the efficiency.

According to embodiments, the modules themselves may be shingled so that the top ribbon is covered by a neighboring module. Such a shingled module configuration could also provide additional area on the module for other elements without adversely affecting the final exposed area of the module array. Examples of modular elements that may be located in overlapping regions may include, but are not limited to, junction boxes (j-boxes) and / or bus ribbons.

In certain embodiments, the j-boxes of each adjacent shingled module are arranged in a line to implement a conductive connection therebetween. This simplifies the configuration of the array of shingled modules by removing wiring.

In certain embodiments, the j-boxes could be reinforced and / or combined with additional structural standoffs. Such a configuration could create an integrated and tilted modular roof mount rack solution, where the dimensions of the junction box determine the slope. Such an implementation may be particularly useful when the array of shingled modules is mounted on a flat roof.

The shingled super cells are unique for module layout for module level power management devices (e.g., DC / AC microinverters, DC / DC module power optimizers, voltage intelligence and smart switches, and related devices) Opportunities. A feature of module-level power management systems is power optimization. Supercells, as described and employed herein, can produce voltages that are higher than conventional panels. Further, the super cell module layout can further divide the module. Both higher voltages and increased division create potential advantages for power optimization.

There is disclosed herein high efficiency solar modules (i.e., solar panels) comprising narrow rectangular silicon solar cells arranged in a shingled manner and electrically connected in series to form supercells, And arranged in rows that are physically parallel within the solar module. The supercells can basically have lengths that span the entire length or width of the photovoltaic module, or two or more super cells can be arranged end to end in a row. Each supercell may comprise any number of solar cells, including, for example, at least nineteen solar cells in some variations and silicon solar cells at greater than or equal to 100 in certain variations. Each solar module can have a conventional size and shape and still includes hundreds of silicon solar cells, and the super cells in a single solar module can be, for example, about 90 volts (V) to about 450 volts Or more to provide a direct current (DC) voltage.

As will be discussed further below, this high DC voltage is then converted to DC to DC boost (DC) by the inverter (e. G., A microinverter located on the solar module) (AC) by eliminating or reducing the need for a step-up of the voltage (e.g., voltage step-up). Also, as will be discussed further below, the high DC voltage is also supplied by a central inverter receiving a high voltage DC output from two or more high voltage shingled solar cell modules in which the DC / AC conversion is electrically connected in parallel with one another Enabling the use of batches to be performed.

Referring again to the drawings for a more detailed understanding of the photovoltaic modules described herein, FIG. 1 illustrates a photovoltaic cell 100 that includes ends of adjacent solar cells that are overlapped and electrically connected to form a supercell 100, Sectional view of a string of series-connected solar cells 10 arranged. Each solar cell 10 includes a semiconductor diode structure and electrical contacts for the semiconductor diode structure that can be provided to an external load when the current generated by the solar cell 10 is illuminated by light.

In the examples described herein, each solar cell 10 is a rectangular crystalline silicon (solar cell) having front (sun side) and rear (light side) metallization patterns that provide electrical contact to opposite sides of the np junction The front metallization pattern is disposed on an n-type conductive semiconductor layer, and the rear metallization pattern is disposed on a p-type conductive semiconductor layer. However, other material systems, diode structures, physical dimensions, or electrical contact arrangements may be used where appropriate. For example, the front (sun side) metallization pattern may be disposed on a p-type conductive semiconductor layer, and the rear (light shielding) metallization pattern may be disposed on an n-type conductive semiconductor layer have.

Referring again to FIG. 1, adjacent solar cells 10 in the supercell 100 are electrically connected to a back metallization pattern of a neighboring solar cell such that they electrically connect the front metallization pattern of one solar cell And are electroconductively coupled to each other within the overlapping region by the electrically conductive bonding material. Suitable electrically conductive bonding materials may include, for example, electrically conductive adhesives and electrically conductive adhesive films and adhesive tapes, and conventional solders.

FIG. 2 illustrates an exemplary rectangular photovoltaic module 200 including six rectangular supercells 100 each having a length approximately equal to the length of the long sides of the photovoltaic module. The supercells are arranged in six parallel rows with their long sides oriented parallel to the long sides of the module. A similarly configured solar module may contain rows of supercells of this side length that are more or less than those shown in this example. In other variations, the supercells can have a length approximately equal to the length of the short side of each rectangular photovoltaic module, and with their long sides oriented parallel to the short sides of the module, As shown in FIG. In yet another arrangement, each column may comprise two or more super cells connected electrically in series. The modules may have, for example, short sides having a length of about 1 meter and long sides having a length of, for example, about 1.5 meters to about 2.0 meters. Any other suitable shapes (e.g., square) and dimensions for the photovoltaic modules may also be used.

In some variations, the conductive bonds between the overlapping solar cells provide mechanical compliance to the supercelles, so that the solar cells can be heated to a temperature range of about -40 < 0 > C to about 100 & In the direction parallel to the longitudinal direction of the solar cell module.

In the illustrated example, each supercell has a width equal to or approximately the same as 1/6 of the width of a conventional 156 mm square or pseudo-square silicon wafer, and is equal to or approximately equal to the width of the square or pseudo-square wafer Lt; RTI ID = 0.0 > 72 < / RTI > rectangular solar cells having the same length. More generally, the rectangular silicon solar cells employed in the photovoltaic modules described herein may have lengths equal to or approximately the same as, for example, the width of a conventional sized square or pseudo-square silicon wafer and, for example, Size square or pseudo-square wafers, and M is an arbitrary integer of < = 20. M may be, for example, 3, 4, 5, 6 or 12. M may also be greater than or equal to 20. The supercell may include any suitable number of such rectangular solar cells.

Because the shingling approach described above includes more cells per module than in the prior art, the supercells in the solar module 200 are designed to provide electrical interconnects (optional) to provide voltages higher than conventional voltages from conventional size solar modules , Flexible electrical interconnects), or may be interconnected in series by module-level power electronics as described below. For example, conventional sized solar modules, including supercells made from silicon solar cells cut at 1/8, may include more than 600 solar cells per module. By contrast, conventional sized solar modules, including conventional size interconnected silicon solar cells, typically include about 60 solar cells per module. In conventional silicon photovoltaic modules, square or pseudo-square solar cells are typically interconnected by copper ribbons and are spaced from one another to accommodate the interconnections. In these cases, cutting the conventional sized square or pseudo-square wafers into narrow rectangles could reduce the overall amount of active solar cell area in the module, and thus, due to the additional cell-to-cell interconnects required Module power could be reduced. In contrast, in the photovoltaic modules disclosed herein, the shading arrangement hides cell-to-cell electrical interconnections below the active solar cell region. Accordingly, the photovoltaic modules disclosed herein are less susceptible to degradation because the tradeoff between the module power in the photovoltaic module and the number of solar cells (and the required cell-to-cell interconnections) It is possible to provide high output voltages without reducing power.

When all the solar cells are connected in series, the shunged solar cell module as described herein can provide a DC voltage in the range of, for example, about 90 volts to about 450 volts or more. As described above, this high DC voltage can be advantageous.

For example, microinverters located near or above solar modules can be used for module level power optimization and DC to AC conversion. 49A-49B, a conventional micro-inverter 4310 receives a DC input of 25V to 40V from a single photovoltaic module 4300 and outputs an AC output of 230V to match the connected grid . The micro-inverter typically includes two major components: DC / DC boost and DC / AC inversion. The DC / DC boost is utilized to increase the DC bus voltage required for the DC / AC conversion and is typically the most expensive and lost (2% efficiency loss) component. Since the solar modules described herein provide high voltage power, the need for DC / DC boost can be reduced or eliminated (FIG. 49B). This can reduce the cost and increase the efficiency and reliability of the solar module 200.

In conventional arrangements using center ("string") inverters rather than microinverters, conventional low DC output solar modules are electrically connected to each other and to the string inverter in series. The voltage generated by the string of solar modules is equal to the sum of the individual module voltages because the modules are connected in series. The allowable voltage range determines the maximum and minimum number of modules in the string. The maximum number of modules is determined by the module voltage and the code voltage limits: for example, N _max x V _oc <600 V (US residential basis) or N _max x V _oc <1000 V Respectively. The minimum number of modules in series is set by the module voltage and the minimum operating voltage required by the string inverter: _Nmin x V _mp &_gt; V _{Inverterminmin} . The minimum operating voltage (V _Inverter min) required by the string inverter (e.g., Fronius, Powerone or SMA inverter) is typically about 180V to about 250V. Typically, the operating voltage for the string inverter is about 400V.

A single high DC voltage shunged solar cell module as described herein may produce a voltage that is greater than the minimum operating voltage required by the string inverter and optionally at or near the optimal operating voltage for the string inverter . As a result, the high DC voltage shading solar cell modules described herein can be electrically connected in parallel to one another for the string inverter. This avoids the string length requirements of the cascaded module strings that can complicate system design and installation. Also, in the series-connected strings of solar modules, the module with the lowest current is the most important feature, and the system can be used for modules on different roof tilt, as well as for other modules in the string Modules may not operate efficiently if they accept different lights. The parallel high voltage module configurations described herein also avoid these problems since the current through each solar module is independent of the current through the other solar modules. In addition, such arrangements do not require module level power electronics and thus can improve the reliability of the solar modules, which may be particularly important in variants in which the solar modules are located at the roof top.

Referring now to Figs. 50A-50B, as described above, the supercell can proceed approximately in the entire length or width of the photovoltaic module. In order to enable electrical connections along the length of the supercell, a hidden (from front view) electrical tapping point may be incorporated into the solar module configuration. This can be achieved by connecting an electrical conductor to the back metallization of the solar cell at the end or intermediate position of the supercell. These hidden taps allow for electrical division of the supercell and allow for the electrical division of the supercell and the use of bypass diodes, module level power electronics (e.g., microinverters, power optimizers, voltage intelligence and smart switches and related devices) Enabling interconnection of segments of supersells or supersells for the components. The use of hidden tabs is further described in U.S. Provisional Patent Application No. 62 / 081,200, U.S. Provisional Patent Application No. 62 / 133,205 and U.S. Patent Application No. 14 / 674,983, each of which is incorporated herein by reference in its entirety.

In the examples of Figs. 50A (exemplary physical layout) and Fig. 50B (exemplary electrical circuit diagram), the exemplary solar modules 200 include six super cells 100 (each of which is electrically connected in series to provide a high DC voltage ). Each supercell is electrically divided into several groups of solar cells by hidden taps 4400, and each group of solar cells is electrically connected in parallel with another bypass diode 4410. In these examples, the bypass diodes are disposed in the solar module laminate structure comprising the solar cells in an encapsulant between the front transparent sheet and the backing sheet. Alternatively, the bypass diodes may be disposed in a junction box located on the back or edge of the photovoltaic module, and may be interconnected to the hidden tabs by conductor progressions.

In the examples of Figs. 51A (physical layout) and 51B (corresponding electric circuit diagram), the exemplary solar module 200 also includes six supercells 100 electrically connected in series to provide a high DC voltage . In this example, the photovoltaic module is electrically divided into three pairs of serially connected supercells, with each pair of supersells electrically connected in parallel with the other bypass diodes. In this example, the bypass diodes are disposed in a junction box 4500 located on the back surface of the solar module. The bypass diodes could instead be located in the solar module laminate structure or edge-mounted junction box.

In the examples of Figures 50A-51B, in normal operation of the solar module, each solar cell is forward biased, and all bypass diodes are accordingly reverse biased and not conducted. However, if one or more solar cells in the group are reverse biased to a sufficiently high voltage, the bypass diode corresponding to this group will turn on, and current flow through the module will be reversed They will bypass batteries. This prevents the formation of hazardous hot spots in shielded or malfunctioning solar cells.

Alternatively, the bypass diode functionality may be implemented in a module-level power electronics, for example, in a micro-inverter disposed on or near the photovoltaic module (module-level power electronics and their use, Devices or systems and module level power management). This module level power electronics, optionally integrated with the solar module, can optimize power from groups of supercells, from each supercell, or from each respective supercell segment in electrically partitioned supercells For example, by operating a group of super cells, a supercell, or a supercell segment at its maximum power point), thereby enabling separate power optimization within the module. As the power electronics can determine when to divert an entire module, a particular group of supercells, one or more specific individual supercells, and / or one or more specific supercell segments, the module- Lt; RTI ID = 0.0 &gt; bypass diodes &lt; / RTI &gt;

This can be implemented, for example, by integrating voltage intelligence at the module level. By monitoring the voltage output of a solar cell circuit (e.g., one or more supercells or supercell segments) in the solar module, the " smart switch " And the like. When a reverse biased solar cell is detected, the power management device may disconnect the corresponding circuit from the electrical system, for example, using a relay switch or other component. For example, if the voltage of the monitored solar cell circuit drops below a predetermined threshold, then the power management device will block (open circuit) the circuit. The predetermined threshold may be, for example, a specific percentage and magnitude (e.g., 20% or 10V) as compared to the normal operation of the circuit. Implementations of this voltage intelligence can be integrated into existing module-level power electronics products (e.g., from Enpas Energy Company, Solar Regis Technologies, Inc., Tigo Energy Company) or through custom circuit design.

Figures 52a (physical layout) and Figure 52b (corresponding electrical schematic) show an exemplary configuration for module level power management of a high voltage solar module comprising shingled supercells. In this example, the rectangular photovoltaic module 200 comprises six rectangular shingled supercells 100 arranged in six rows extending the length of the long sides of the photovoltaic module. The six super cells are electrically connected in series to provide a high DC voltage. Module level power electronics 4600 may perform voltage sensing, power management and / or DC / AC conversion for the entire module.

53A (physical layout) and FIG. 53B (corresponding electrical schematic) show another exemplary configuration for module level power management of a high voltage solar module comprising shingled supercells. In this example, the rectangular photovoltaic module 200 comprises six rectangular shingled supercells 100 arranged in six rows extending the length of the long sides of the photovoltaic module. The six super cells are electrically grouped into three pairs of serially connected supercells. Each pair of supersells can perform voltage sensing and power optimization on individual pairs of supersells, and can provide two or more of these in series to provide a high DC voltage and / or perform a DC / AC conversion. To a module level power electronics 4600 that connects to the power supply 4600 via a power supply.

Figures 54a (physical layout) and Figure 54b (corresponding electrical schematic) show another exemplary configuration for module level power management of high voltage solar modules comprising shingled supercells. In this example, the rectangular photovoltaic module 200 comprises six rectangular shingled supercells 100 arranged in six rows extending the length of the long sides of the photovoltaic module. Each supercell is capable of performing voltage sensing and power optimization for the supercell, and is capable of providing a high level of DC voltage and / or modulo-level power coupling serially the two or more of them to perform DC / And is separately connected to the electronics 4600.

Figures 55a (physical layout) and Figure 55b (corresponding electrical schematic) show another exemplary configuration for module level power management of high voltage solar modules comprising shingled supercells. In this example, the rectangular photovoltaic module 200 comprises six rectangular shingled supercells 100 arranged in six rows extending the length of the long sides of the photovoltaic module. Each supercell is electrically divided into two or more groups of solar cells by hidden taps 4400. Each resulting group of solar cells is capable of performing voltage sensing and power optimization for each solar cell group, and may be a module that serially connects a plurality of groups to provide a high DC voltage and / or perform DC / AC conversion Level power electronics (4600).

In some variations, two or more high voltage DC-shined solar cell modules as described herein are electrically serially connected to provide a high voltage DC output that is converted to AC by a by inverter. The inverter may be, for example, a micro-inverter integrated with one of the solar modules. In these cases, the micro-inverter may optionally also be a component of a module level power management electronics device that performs additional voltage sensing and connects functions as described above. Optionally, the inverter may be a central " string " inverter as discussed further below.

As shown in Figure 56, stringing the supercells in successive columns of solar cells of the supercells in series may be offset slightly along their long axes in a staggered manner This staggering not only reduces the module area (space / length), but also simplifies manufacturing, while interconnecting the adjacent ends of the supercell strings to the top of one supercell and the bottom of the other 4700). &Lt; / RTI &gt; Adjacent rows of supercells can be offset, for example, to about 5 millimeters.

The differential thermal expansion between the electrical interconnects 4700 and the silicon solar cells and the resulting stress on the solar cell and the interconnect may lead to cracking and other failure modes that may degrade the performance of the solar module. Thus, it is desirable that the interconnect be flexible and configured to accommodate this differential expansion without significant stress evolution. The interconnect may be formed of, for example, very soft materials (e.g., soft copper, thin copper sheet) or may be formed of low thermal expansion coefficient materials (e.g., Kovar, Invar or other low thermal expansion iron- Such as slits, slots, holes, or truss structures that are formed from materials having a thermal expansion coefficient that approximately coincides with that of silicon or alloys (or alloys), or that accept differential thermal expansion between the interconnect and the silicon solar cell It is possible to provide stress and thermal expansion mitigation by incorporating geometric expansion features in the plane and / or employing out-of-plane geometric features such as kinks, jogs or dimples that accommodate such differential thermal expansion. The conductive portions of the interconnects may have a thickness, for example, less than about 100 microns, less than about 50 microns, less than about 30 microns, or less than about 25 microns, to increase the flexibility of the interconnects Generally allows for the use of thin and flexible conductive ribbons without undue power loss resulting from the electrical resistance of the thin interconnects.

In some variations, the conductive connections between the supercell and the flexible electrical interconnect are such that the flexible electrical interconnect does not damage the solar cell module and does not damage the supercell and the flexible electrical interconnect for a temperature range of about -40 &lt; 0 & To accommodate the thermal expansion mismatch between the interconnects.

Figure 7A (discussed above) shows some exemplary interconnect configurations employing geometric features to eliminate stress in the plane represented by reference numerals 400A-400T, and Figures 7B-1 and 7B-2 ) Illustrate exemplary interconnect configurations employing out-of-plane stress-relieving geometric features, designated by reference numerals 400U and 3705. Any or any combination of these interconnect configurations employing stress relief features may be suitable for interconnecting the supercells electrically in series to provide a high DC voltage as desired herein.

The discussion of Figures 51A-55B focuses on module level power management with possible DC / AC conversion of high DC module voltage by module level power electronics to provide an AC output from the module. As described above, the DC / AC conversion of the high DC voltages from the shingled solar cell modules as described herein can be performed instead by the center-string inverter. For example, FIG. 57A illustrates a plurality of high DC voltages (not shown) that are electrically connected in parallel to the string inverter 4815 via a negative bus 4820 with a high DC voltage and a positive bus 4810 with a high DC voltage. And schematically illustrates a photovoltaic system 4800 including shingled solar cell modules 200. The photovoltaic system &lt; RTI ID = 0.0 &gt; 4800 &lt; / RTI &gt; Typically, each solar module 200 includes a plurality of shingled supercells electrically connected in series with the electrical interconnects to provide a high DC voltage, as described above. The photovoltaic modules 200 may optionally include, for example, bypass diodes arranged as described above. 57B illustrates an exemplary arrangement of photovoltaic system 4800 on the roof top.

In some variations of the photovoltaic system 4800, two or more short series connected strings of high DC voltage shingle solar cell modules may be electrically connected in parallel with the string inverter. Referring again to FIG. 57A, for example, each solar module 200 may be replaced with a series-connected string of two or more high DC voltage-shined solar cell modules 200. This could be done, for example, by maximizing the voltage provided to the inverter by following regulatory standards.

Conventional solar modules typically produce Isc (short circuit current) of about 8 amps, about 50 Voc (open circuit voltage), and about 35 Vmp (maximum power point voltage). As discussed above, each of the solar cells has an area of about 1 / M of the area of a conventional solar cell and has a M number of conventional numbers of solar cells, such as a high DC voltage- The modules produce about a M times higher voltage and 1 / M current than conventional solar modules. As mentioned above, M can be any suitable integer and is typically &lt; RTI ID = 0.0 &gt; 20, &lt; / RTI &gt; M may be, for example, 3, 4, 5, 6, or 12.

When M = 6, the Voc for the high DC voltage-shading solar cell modules may be, for example, about 300V. Connecting these two modules in series could provide about 600 V DC to the bus and follow the maximum setting by US residential standards. When M = 4, the Voc for the high DC voltage-shading solar cell modules may be, for example, about 200V. Connecting three such modules in series could provide approximately 600 V DC to the bus. When M = 12, the Voc for the high DC voltage-shading solar cell modules may be, for example, about 600V. The system could also be configured to have bus voltages of 600 V or less. In such variants, the high DC voltage-shulded solar cell modules may be arranged to provide an optimal voltage to the inverter, for example, in pairs or triplets or any other suitable &lt; RTI ID = 0.0 &gt;Lt; / RTI &gt;

The challenge arising from the above-described parallel configuration of high DC voltage shingle solar cell modules is that when one photovoltaic module is shorted, the other photovoltaic modules potentially turn their power to the shorted module (i.e., Which can cause current to flow through the shorted module and dissipate power therein), which can be dangerous. This problem may occur, for example, in the use of blocking diodes to prevent other modules from driving current through shorted modules, the use of current limiting fuses, Can be prevented by the use of current-limiting fuses. FIG. 57B schematically illustrates the use of two current-limiting fuses 4830 on the positive and negative terminals of the high DC voltage shunged solar cell module 200. FIG.

The protection arrangement of the blocking diodes and / or fuses may depend on whether the inverter comprises a transformer or not. Systems using inverters including transformers typically ground negative conductors. Systems using inverters without transformers typically do not ground the negative electrode conductors. For an inverter without a transformer, it may be desirable to have a current limiting fuse connected to the positive terminal of the photovoltaic module and another current limiting fuse connected to the negative terminal.

The blocking diodes and / or the current-limiting fuses may be arranged, for example, with a junction box or with each module in the module laminate. Suitable junction boxes, blocking diodes (e.g., in-line blocking diodes), and fuses (e.g., in-line fuses) are available from the Shoals Technology Group May include those available.

58A shows an exemplary high voltage DC-shined solar cell module including a junction box 4840 in which a blocking diode 4850 is connected to the anode terminal of the solar module. The junction box does not include a current-limiting fuse. This configuration can preferably be used in combination with one or more current-limiting fuses located in other places (e.g., in a combiner box) in conjunction with the positive and / or negative terminals of the photovoltaic module See FIG. 58D, for example). 58B illustrates an exemplary high-voltage DC-shined solar cell module including a junction box 4840 in which a blocking diode is aligned with the anode terminal of the solar module and a current-limiting fuse 4830 is aligned with the cathode terminal. 58C shows an exemplary high-voltage DC-shined solar cell module 4840 including a junction box 4840 in which a current-sourcing fuse 4830 is aligned with the anode terminal of the solar module and another current-sourcing fuse 4830 is aligned with the cathode terminal. Lt; / RTI &gt; 58D is an exemplary high-voltage DC-shined solar cell module comprising a junction box 4840 configured as in FIG. 58A and fuses located outside of the junction box aligned with the anode and cathode terminals of the solar module Lt; / RTI &gt;

Referring now to Figures 59A-59B, as an alternative to the above-described arrangements, interrupting diodes and / or current-limiting fuses for all high DC voltage-shunged solar cell modules are coupled to a combiner box 4860, As shown in FIG. In these variations, one or more individual conductors proceed separately from each module to the combiner box. As shown in Figure 59 (a), a single conductor of one polarity (e.g., voice as shown) in one option is shared between all the modules. In another option (Figure 59b), both polarities have individual conductors for each module. Although Figs. 59A-B show only fuses located within combiner box 4860, any suitable combination of fuses and / or blocking diodes may be located in the combiner box. Also, electronic devices that perform other functions, such as monitoring, maximum power point tracking, and / or disconnection of individual modules or groups of modules, may be implemented within the combiner box.

The reverse bias operation of the solar module may cause the one or more solar cells in the solar module to be shielded or otherwise generate a small current, and the solar module may be powered by the low current solar cell Can be generated when operating at a voltage-current point that drives a larger current than a solar cell. Reverse-biased solar cells can become hot and can create a hazardous condition. The parallel arrangement of the high DC voltage shunged solar cell modules can make the modules protected from reverse bias operation, for example, by setting appropriate operating voltages for the inverter, as shown in Figure 58A. This is exemplified by, for example, Figs. 60A to 60B.

60A shows a plot 4870 of the current versus voltage and a plot 4880 of the power vs. voltage for a string of parallel connections of about ten high DC voltage shingle solar modules. These curves were calculated for models without solar modules that included reverse biased solar cells. Since the solar modules are electrically connected in parallel, they all have the same operating voltage and their currents are added. Typically, the inverter will change the load on the circuit to undergo the power-voltage curve, identify the maximum point on the curve, and then operate the module circuit at this point to maximize the output power.

In contrast, FIG. 60B shows a plot of current versus voltage versus voltage versus voltage for the model system of FIG. 60a and a plot of power versus voltage for some of the solar modules in the circuit, including one or more reverse biased solar cells. (4900). The reversed-biased modules are configured to produce an exemplary current-voltage (VREF) voltage by forming a knee shape having a transition from about 10 amps (amp) operation at voltages down to about 210 volts to about 16 amp operation at voltages less than about 200 volts They represent themselves within the curve. At voltages of about 210 volts or less, the shaded modules include reverse biased solar cells. The reverse biased modules also exhibit themselves in the power-voltage curve by the presence of two maxima: an absolute maximum at about 200 volts and a local maximum at about 240 volts. The inverter can be configured to recognize these signals of reverse biased solar modules and operate the solar modules at an absolute maximum or maximum power point voltage without modules being reverse biased. In the example of FIG. 60B, the inverter can operate the modules at the maximum power point to ensure that there are no modules that are reverse biased. Additionally or alternatively, the minimum operating voltage may be selected for the inverter such that any modules below it are unlikely to be reverse biased. This minimum operating voltage may be adjusted based on other variables such as the ambient temperature, the operating current and the calculated or measured solar module temperature, as well as other information received from external sources such as, for example, the irradiance.

In some embodiments, the photovoltaic modules of the high DC voltage may themselves be shunged, and adjacent photovoltaic modules may be arranged in a partially overlapping fashion and, optionally, electrically overlapping in their overlapping regions . Such shingled arrangements include high voltage solar modules that are electrically connected in parallel to provide a high DC voltage to the string inverter, or a high voltage solar module that includes a micro inverter that converts the high DC voltage of the solar module to an AC module output, Can be selectively used for optical modules. A pair of high voltage solar modules may be shunged as described above and may be electrically connected in series to provide a desired DC voltage, for example.

Conventional string inverters can be used to: 1) be compatible with other series-connected module string lengths; 2) some modules in the string can be completely or partially shielded; and 3) (Or &quot; dynamic range &quot;) of the potential input voltage. In systems employing a parallel configuration as described herein, the length of the string of solar modules connected in parallel does not affect the voltage. Also, for some cases where some modules are partially shaded and some are not, it may be determined to operate the system at the voltage of unshaded modules (e.g., as described above). Thus, the input voltage range of the inverter in a parallel configuration system may require only accepting the 'dynamic range' of the factor # 3 - temperature and radiation variations. Because this is small, for example, about 30% of the required conventional dynamic range of the inverters, the inverters employed in the parallel configuration systems as described herein can have narrow widths, for example, about 250 volts and high (Maximum power point tracking) between temperature and low radiation at about 175 volts, or for example at about 450 volts at standard conditions and between about 350 volts at high temperatures and low radiation (in this case 450 volts MPPT Operation may correspond to V _OC below 600 volts at the lowest temperature operation). Also, as described above, the inverters can receive a sufficient DC voltage to be directly converted to AC without a boost phase. Thus, the string inverters employed in the parallel configuration systems as described herein can be simpler, have the lowest cost, and can operate at higher efficiencies than the string inverters employed in conventional systems have.

For both the microinverters and string inverters employed in the high voltage DC shingle solar cell modules described herein, the peak-to-peak ratio of the AC to eliminate the DC boost requirements of the inverter, it may be desirable to construct the photovoltaic module (or a short series connected string of solar modules) to provide a DC voltage above the peak (e.g., maximum power point Vmp) of operation. For example, for 120V AC, the peak-to-peak is sqrt (2) * 120V = 170V. Thus, the solar modules may be configured to provide a minimum Vmp of, for example, about 175V. Under normal conditions, Vmp can then be about 212V (assuming a negative voltage temperature coefficient of 0.35% and a maximum operating temperature of 75 DEG C) and at the lowest temperature operating conditions (e.g., -15 DEG C) Vmp can then be about 242 volts, so that Voc can be less than about 300 volts (depending on the module charge rate). For split phase 120V AC (or 240V AC), all these numbers are doubled, which is convenient because 600V DC is the maximum allowed in the US for many residential applications. For commercial applications that require and allow higher voltages, these numbers can be further increased.

The high voltage shingled solar cell module as described herein has a &gt; 600 V _OC Or &gt; 1000V _OC , in which case the module may include an integrated power electronics that prevents the external voltage provided by the module from exceeding the code requirements. Such an arrangement can make the operation V _mp sufficient for a split-face 120V (240V, requiring about 350V) without the problem of V _OC at low temperatures exceeding 600V.

When the connection of the building to the power distribution is disconnected, for example by firefighters, the photovoltaic modules (for example on the building roof) that provide electricity to the building are still in power Can be produced. This raises concerns that such solar modules may maintain the roof's electrical power at hazardous voltages after the building is disconnected from the network. To address this concern, the high voltage DC shingle solar cell modules described herein may optionally include, for example, a disconnect in or adjacent to a module junction box. The disconnect may be, for example, a physical disconnect or a solid state disconnect. The disconnection may be configured to " normally off &quot; for example, so that when disconnecting a high voltage output of the solar module from the roof circuit upon loss of a particular signal (e.g. from the inverter) do. The communication for the disconnect may be over high voltage cables, for example, via separate wired or wireless.

An important advantage of shingling for high voltage solar modules is thermal diffusion between solar cells in a shunged super cell. The inventors have found that heat can be easily transferred along the silicon super cell through thin, electrically and thermally conductive bonds between adjacent and overlapping silicon solar cells. The thickness of the electrically conductive bond between adjacent and overlapping solar cells, measured orthogonally to the front and back surfaces of the solar cells, formed by the electrically conductive bonding material is, for example, about 200 microns Less than or equal to about 150 microns, less than or equal to about 125 microns, less than or equal to about 100 microns, less than or equal to about 90 microns, less than or equal to about 80 microns Less than or equal to about 70 microns, less than or equal to about 60 microns, less than or equal to about 50 microns, or less than or equal to about 25 microns. This thin bonding reduces resistive losses in interconnections between cells and also promotes heat flow along the supercell from any hot spots in the supercell that could have evolved during operation. The thermal conductivity of the bond between the solar cells may be, for example, about 1.5 watts / (meter-K). In addition, the rectangular aspect ratio of solar cells employed here typically provides extended regions of thermal contact between adjacent solar cells.

In contrast, in conventional photovoltaic modules employing ribbon interconnects between adjacent solar cells, the heat generated in one solar cell is not easily diffused through the ribbon interconnects to other solar cells in the module Do not. This makes conventional solar modules easier to evolve hot spots than the solar modules described herein.

Moreover, since the supercells described herein are typically formed by shingling rectangular solar cells each having an active area smaller than (e. G., 1/6) that of conventional solar cells, The current through the supercells in the optical modules is typically less than through a string of conventional solar cells.

As a result, less heat is lost in the solar cells that are reverse biased at the breakdown voltage in the solar modules disclosed herein, and the heat is dissipated through the solar cell and the supercell without creating a dangerous hot spot It can be easily diffused.

Some additional optional features may allow high voltage solar modules employing supercells as described herein to be more resistant to heat lost in a reverse biased solar cell. For example, the supercells can be encapsulated in a thermoplastic olefin (TPO) polymer. TPO encapsulants are more thermo-thermally stable than standard ethylene-vinyl acetate (EVA) encapsulants. EVA will be brown in temperature and ultraviolet light and will bring hotspot problems caused by cells that limit current. In addition, the solar modules may have a glass-glass structure in which the sealed super cells are sandwiched between a glass front sheet and a glass back sheet. Such a glass-glass structure allows it to operate safely at higher temperatures than would be tolerated by conventional polymer backing sheets. Furthermore, the junction boxes, if present, are connected to one or more of the edges of the solar module, rather than the back of the solar module, where the junction box could add an additional layer of thermal insulation to the solar cells in the module above it As shown in FIG.

The inventors have thus found that the heat flow through the supercelles may cause the module to operate without significant risk of having one or more reverse biased solar cells, so that the high voltage sunlight formed from the supercells as described herein It has been recognized that modules can employ much less bypass diodes than conventional solar modules. For example, in some variations, high voltage solar modules as described herein may include less than one bypass diode per 25 solar cells, less than one bypass diode per 30 solar cells, 50 solar cells A bypass diode less than one per 75 solar cells, a bypass diode less than one per 100 solar cells, a single bypass diode, or employing a bypass diode I never do that.

Referring now to Figures 61A-61C, exemplary high voltage solar modules utilizing bypass diodes are provided. When part of the solar module is shaded, damage to the module can be prevented or reduced through the use of bypass diodes. For the exemplary solar module 4700 shown in FIG. 61A, ten super cells 100 are connected in series. As illustrated, the ten super cells are arranged in parallel rows. Each supercell includes 40 serially connected solar cells 10, wherein each of the 40 solar cells is made approximately square or pseudo-square 1/6 as described herein. Under normal unshielded operation, current flows from each junction box 4716 through each of the supergels 100 connected in series via connectors 4715, after which current flows through the junction box 4717 It comes out. Optionally, a single junction box can be used instead of separate junction boxes 4716 and 4717, so that the current returns to one junction box. The example shown in Figure 61A illustrates an implementation with approximately one bypass diode per supercell. As shown, a single bypass diode is electrically coupled between a pair of neighboring supergels at a point approximately midway along the supercells (e.g., a single bypass diode 4901A is coupled between the first The second bypass diode 4901B is electrically connected between the 22nd solar cell of the supercell and its neighboring solar cell in the second supercell, and the second bypass diode 4901B is electrically connected between the 22nd solar cell of the supercell and the neighboring solar cell in the second supercell, And the like). The first and last strings of cells have only about half of the number of solar cells in the supercell per bypass diode. For the example shown in FIG. 61A, the first and last strings of the cells include only 22 cells per bypass diode. The total number of bypass diodes 11 for a modification of the high voltage solar module illustrated in Figure 61A is equal to the number of supersells plus one additional bypass diode.

Each bypass diode may be integrated into, for example, a flex circuit. Referring now to FIG. 61B, an enlarged view of a bypass diode connected region of two neighboring super cells is shown. The time point for FIG. 61B is from the non-sun side. As shown, two solar cells 10 on neighboring supercells are electrically connected using a flex circuit 4718, which includes a bypass diode 4720. The flex circuit 4718 and the bypass diode 4720 are electrically connected to the solar cells 10 using contact pads 4719 located on the back surfaces of the solar cells See the following discussion of the use of hidden contact pads to provide pass diodes). Additional bypass diode electrical connection schemes can be employed to reduce the number of solar cells per bypass diode. One example is illustrated in Figure 61c. As shown, one bypass diode is electrically connected between each pair of approximately mid-neighboring supercells along the supercells. A bypass diode 4901A is electrically connected between neighboring solar cells on the first and second supercells, and a bypass diode 4901B is formed between neighboring solar cells on the second and third supercells And a bypass diode 4901C is electrically connected between neighboring solar cells on the third and fourth super cells. A second set of bypass diodes may be included to reduce the number of solar cells that will be bypassed in the case of partial shading. For example, the bypass diode 4902A is electrically connected between the first and second super cells at an intermediate point between the bypass diodes 4901A and 4901B, and the bypass diode 4902B is electrically connected between the bypass diode Which are electrically connected between the second and third super cells at an intermediate point between the first and second super-cells 4901B and 4901C, and reduce the number of cells per bypass diode. Optionally, another set of bypass diodes may be electrically connected to further reduce the number of solar cells being bypassed in the case of partial shading. The bypass diode 4903A is electrically connected between the first and second super cells at an intermediate point between the bypass diodes 4902A and 4901B and the bypass diode 4903B is electrically connected between the bypass diodes 4902B, 4901C), and further reduces the number of cells per bypass diode. This configuration is the result of the inherent configuration of the bypass diodes, which allows small groups of cells to be bypassed during partial shading. Additional diodes may be electrically connected in this manner until a desired number per pass diode, e. G. About 8, about 6, about 4 or about 2 solar cells per bypass diode is implemented. In some modules, about four solar cells per bypass diode are preferred. If desired, one or more of the bypass diodes illustrated in Figure 61c may be integrated into the hidden and flexible interconnect as illustrated in Figure 61b.

The present disclosure includes, for example, solar cell cleaving tools and solar cells that can be used to cut conventional sized square or pseudo-square solar cells into a plurality of narrow rectangular or substantially rectangular solar cells, Cutting methods are disclosed. These cutting tools and methods may be used to bend the conventional size solar cells against the support surface of the curve and thus to cut the solar cells along pre-fabricated scribe lines, Vacuum is applied between the support surfaces. An advantage of these cutting tools and methods is that they do not require physical contact with the upper surfaces of the solar cells. Accordingly, these cutting tools and methods can be employed to cut solar cells that include soft and / or uncured materials on their upper surfaces that could be damaged by physical contact. Also, in some variations, these cutting mechanisms and cutting methods may only require contact with portions of the bottoms of the solar cells. In these variations, these cutting mechanisms and methods may be employed to cut solar cells that include soft and / or uncured materials on portions of their bottoms that are not contacted by the cutting mechanism.

For example, one solar cell fabrication method utilizing the cutting tools and methods disclosed herein may be used to fabricate a plurality of silicon solar cells, each having one or more conventional size silicon solar cells Laser scribing one or more scribe lines on the one or more silicon solar cells, applying an electrically conductive adhesive bonding material to portions of the top surfaces of the one or more silicon solar cells, The one or more silicon solar cells are bent with respect to the support surface of the curve to provide a plurality of rectangular silicon solar cells each including a portion of the electrically conductive adhesive bond material disposed adjacent to the surface thereof , And thus along the scribe lines It comprises the step of applying one or vacuum between the support surface of the bottom surface and the curve of the one or more silicon solar cell so as to cut them over silicon solar cells. The conductive adhesive bonding material may be applied to the conventional size silicon solar cells before or after the solar cells are laser scribed.

The resulting plurality of rectangular silicon solar cells may be aligned with the long sides of adjacent rectangular silicon solar cells overlapping in a shingled manner with the electrically conductive adhesive bond material disposed therebetween. The electrically conductive bonding material can then be cured, thereby joining adjacent and overlapping rectangular silicon solar cells together and connecting them electrically in series. This process forms a shingled " supercell " as described in the above-cited patent applications in " Reference to Related Applications in the Technical Field ".

Referring again to the drawings to further understand the cutting tools and methods disclosed herein, FIG. 20A schematically illustrates a side view of an exemplary apparatus 1050 that may be used to cut scribed solar cells. In this arrangement, scribed conventional size solar cell wafers 45 are conveyed to the upper portion of the curve of vacuum manifold 1070 by perforated moving belt 1060. As the solar cell wafer 45 passes over the upper portion of the curve of the vacuum manifold, a vacuum applied through the perforations in the belt pulls the bottom surface of the solar cell wafer 45 against the vacuum manifold, Thereby bending the solar cell. The radius of curvature R of the portion of the curve of the vacuum manifold is selected such that bending the solar cell wafer 45 in this manner cuts the solar cell along the scribe lines to form rectangular solar cells 10 . The rectangular solar cells 10 can be used, for example, in the supercell as illustrated in Figs. 1 and 2. The solar cell wafer 45 can be cut by this method without touching the top surface of the solar cell wafer 45 to which the conductive adhesive bonding material has been applied.

The cutting can be carried out by arranging the scribe lines in such a way that one end for each scribe line is oriented at an angle &amp;thetas; to the vacuum manifold so as to reach the portion of the curve of the vacuum manifold before the other end, May be preferentially initiated at one end of the line (i.e., at one edge of the solar cell 45). As shown in Fig. 20B, for example, the solar cells are arranged such that the scribe line at an angle to the cutting portion of the curved line of the manifold oriented orthogonally to the advancing direction of the belt and the advancing direction of the belt, Lt; / RTI &gt; As another example, FIG. 20C shows these scribe lines and oriented cells orthogonal to the cutting portion of the curve of the manifold oriented at an angle to the direction of travel of the belt and the direction of travel of the belt.

The cutting mechanism 1050 may utilize a single perforated moving belt 1060 having a width that is, for example, substantially orthogonal to the direction of its travel, which is approximately the width of the solar cell wafer 45. Alternatively, the instrument 1050 can include two, three, four or more perforated moving belts 1060 that can be arranged side by side, for example, and can be selectively spaced from one another. The cutting mechanism 1050 can utilize a single vacuum manifold that can, for example, have a width that is approximately the same as the width of the solar cell wafer 45 and that is perpendicular to the direction of travel of the solar cells. Such a vacuum manifold may be employed, for example, with a single full width perforated moving belt 1060, or with two or more such belts arranged side by side and selectively spaced apart from one another, for example .

The cutting mechanism 1050 may include two or more curved vacuum manifolds arranged side by side and spaced apart from one another, and each vacuum manifold has the same curvature. Such an arrangement may be employed, for example, with a single full length perforated moving belt 1060, or with two or more such belts arranged side by side and selectively spaced apart from one another. For example, the mechanism may include a moving belt 1060 perforated with respect to each vacuum manifold. In the latter arrangement, the vacuum manifolds and their corresponding perforated moving belts may be arranged to contact the bottom of the solar cell wafer along only two narrow strips defined by the widths of the belts. In these cases, the solar cell may include the soft materials within the area of the bottom surface of the solar cell wafer that is not contacted by the belts without risk of damage to the soft materials during the cutting process.

Any suitable arrangement of perforated moving belts and vacuum manifolds may be utilized within the cutting mechanism 1050. [

In some variations, the scribed solar cell wafers 45 may include a conductive adhesive bonding material that is not cured on top and / or bottom surfaces thereof prior to cutting using cutting implement 1050 and / Soft materials. The scribing of the solar cell wafer and the application of the soft material could occur in any order.

62A illustrates a side view of another exemplary cutting mechanism 5210 similar to the cutting mechanism 1050 described above, and FIG. 62B illustrates a top view. In use of the cutting mechanism 5210, a conventional sized scribed solar cell wafer 45 is provided with a parallel spaced perforated belt (not shown) moving at a constant speed over a pair of parallel, spaced vacuum manifolds 5235, Lt; RTI ID = 0.0 &gt; 5230 &lt; / RTI &gt; Vacuum manifolds 5235 typically have the same curvature. As the wafer advances to the belts over the vacuum manifolds through the cut region 5235C the wafer is held against the support surfaces of the curves of the vacuum manifolds by the force of the vacuum pulling against the bottom of the wafer The radius of curvature is defined as the radius of curvature. As the wafer is bent around the cutting radius, the scribe lines become cracks that separate the wafer into individual rectangular solar cells. As will be described further below, the curvatures of the vacuum manifolds are such that the adjacent cut rectangular solar cells are not coplanar, and the edges of adjacent cut rectangular solar cells follow the cutting process And are arranged so as not to come into contact with each other. The truncated rectangular solar cells may be unloaded continuously from the perforated belts in any suitable manner, some examples of which are described below. Typically, the unloading method further separates adjacent cut solar cells from each other to prevent contact therebetween when they subsequently co-planar.

62A-62B, each vacuum manifold may include, for example, a flat region 5235F that does not provide vacuum or provides low vacuum or high vacuum; An optional curved transition region 5235T that provides low vacuum or high vacuum, or transitions from low vacuum to high vacuum along its length; A cutting region 5235C providing a high vacuum; And a post-cleave region 5235PC with a more rapid radius that provides a low vacuum. Belts 5230 transfer wafers 45 from planar region 5235F into and through transition region 5235T and then into cut region 5235C where the wafers are cut and then And transfers the resulting cut solar cells 10 out of the cut region 5235C and into the after-cut region 5235PC.

The planar region 5235F is typically operated at a sufficiently low vacuum to confine the wafers 45 to the belts and vacuum manifolds. Where the vacuum can be low (or may be absent) because it is easier to reduce friction and thus reduce the required belt tension, and to limit the wafers 45 to a flat surface rather than a curved surface. The vacuum in the flat region 5235F can be, for example, about 1 inch to about 6 inches of mercury.

Transition region 5235T provides a transition curve from flat region 5235F to truncated region 5235C. The radius of curvature or radius of curvature in transition region 5235T is greater than the radius of curvature in cut region 5235C. The curve in the transition region 5235T may be, for example, part of an ellipse, but any suitable curve may be used. The wafers 45 approaching the cut region 5235C through the transition region 5235T at a shallower change in curvature than the direct transition from the flat orientation in the region 5235F to the cutting radius in the cut region 5235C This contributes to ensuring that the edges of the wafers 45 do not lift and break the vacuum because the edges of the wafers 45 limit the wafers to the cutting radius in the cut region 5235C It can make things difficult. The vacuum in the transition region 5235T may be equal to, for example, in the cutout region 5235C, or may be intermediate between the cases of regions 5235F and 5235C, May be transitioned along the length of region 5235T between cases in region 5235C. The vacuum in the transition region 5235T may be, for example, about 2 inches to about 8 inches of mercury.

Cutting region 5235C may have a varying radius of curvature or optionally a constant radius of curvature. Such a constant radius of curvature may be, for example, between about 11.5 inches, about 12.5 inches, or about 6 inches to about 18 inches. Any suitable range of curvature can be utilized and can be selected based in part on the thickness and depth of the wafer 45 and the geometry of the scribe lines in the wafer 45. Typically, the thinner the wafer, the shorter the radius of curvature required to bend the wafer sufficiently to break it along the scribe line. The scribe lines may have a depth of, for example, from about 60 microns to about 140 microns, although any other suitable shallower or deeper scribe line depth may be used. Typically, the smaller the scribe line is, the shorter the radius of curvature required to bend the wafer sufficiently to break it along the scribe line. The cross-sectional shape of the scribe line also affects the required radius of curvature. A scribe line having a wedge-shaped or wedge-shaped bottom can more effectively concentrate stress than a scribe line having a rounded shape or a rounded bottom. Scribe lines that more effectively focus stress may not require scribe lines that less effectively stress stress with a radius of curvature in a steep cut area.

Vacuum in the cutout region 5235C for at least one of the two parallel vacuum manifolds is typically transferred to another region &lt; RTI ID = 0.0 &gt; 5235C &lt; / RTI &gt; to ensure that the wafer is suitably limited to the cutting radius of curvature to maintain a constant bending stress. Higher than. Optionally, and as will be described further below, one manifold in this region may provide a higher vacuum than the other to better control cutting along the scribe lines.

The post-cut region 5235PC typically has a radius of curvature that is sharper than the cut region 5235C. This means that the cut surfaces of adjacent cut solar cells can be transported from the belts 5230 without being rubbed or touched (which could lead to solar cell defects from cracks or other failure types) . In particular, a sharper radius of curvature provides greater separation between the edges of adjacent cut solar cells on the belts. Vacuum in the post-cut region 5235PC is low because it is no longer required to limit the solar cells to the radius of the curve of the vacuum manifolds since the wafers 45 have already been cut into solar cells 10. [ (E. G., Similar to or the same as in the flat region 5235F). The edges of the cut solar cells 10 can be lifted, for example, from the belts 5230. In addition, it may be desirable that the cut solar cells 10 do not have excessive stress.

The flat, transition, cut and post-cut regions of the vacuum manifolds can be separate portions of other curves having their ends matched. For example, the top surface of each manifold includes a flat planar portion, a portion of an ellipse for the transition region, a circular arc for the cut region, and a portion of a circular arc or ellipse for the post-cut region can do. Optionally, some or all of the curved portion of the upper surface of the manifold may have a continuous geometric function of increasing curvatures (reduced diameter of the contact source). Suitable such functions may include, but are not limited to, spiral functions such as, for example, clothoids, and natural logarithmic functions. The clause is a curve whose curvature increases linearly along the path length of the curve. For example, in some variations, the transitional, truncated, and truncated regions are all portions of a single chloroid curve having one end connected to the planar region. In some other variations, the transition region is a clause curve having one end connected to the flat region and the other end connected to a cut region having a circular curvature. In the latter variants, the post-cut region may have, for example, a curvature of circular curvature of a more rapid radius or of a more rapid radius.

As described above and schematically illustrated in Figures 62b and 63a, in some variations one manifold provides a high vacuum in the cut region 5235C while the other manifold is in the cut region 5235C Provide vacuum. The high vacuum manifold completely limits the end of the wafer supporting it to the curvature of the manifold, which provides sufficient stress on the end of the scribe line that rests on the high vacuum manifold to start cracking along the scribe line. Since the low vacuum manifold does not completely limit the end of the supporting wafer to the curvature of the manifold, the curved radius of the wafer on this side is sufficient to generate the stress necessary to initiate cracking in the scribe line It is not sudden. However, the stress is high enough to propagate a crack starting at the other end of the scribe line placed on the high vacuum manifold. Without some vacuum on the " low vacuum " side to partially and sufficiently limit this end of the wafer to the curvature of the manifold, cracks that start on opposite "high vacuum" ends of the wafer are completely There may be a risk of not being propagated. In variants such as those described above, one manifold can selectively provide a low vacuum along its entire length from the planar region 5235F through the post-cut region 5235PC.

As described above, the asymmetric vacuum arrangement in the cutout region 5235C provides asymmetric stress along the scribe lines that control the generation and propagation of cracks along the scribe lines. For example, referring to FIG. 63B, if instead two vacuum manifolds provide the same (e.g., high) vacuum in the cutout region 5235C, cracks may be created at both ends of the wafer , Propagate towards each other, and can meet somewhere within the central region of the wafer. Under these circumstances, there is a risk that the cracks are not connected to each other, thereby creating a potential mechanical breakdown point in the resulting severed cells where they encounter the cracks.

As an optional or additional example of the asymmetric vacuum arrangement described above, the cut can be initiated at one end of the scribe line by preferentially arranging one end of the scribe line to reach the cut region of the manifolds before the other end. This can be done, for example, by orienting the solar cell wafers at an angle to the vacuum manifolds as described above with respect to Figure 20b. Optionally, the vacuum manifolds may be arranged such that one cut region of the two manifolds follows the belt path more than the cut region of the other one of the vacuum manifolds. For example, two vacuum manifolds having the same radius of curvature may be slightly offset in the direction of travel of the moving belt, so that before the solar cell wafers reach the cut region of the other vacuum manifold, Reaches the cutting area of the fold.

Referring now to Figure 64, in the illustrated example, each vacuum manifold 5235 includes through holes 5240 arranged in a line below the center of the vacuum channel 5245. As shown in FIGS. 65A-65B, a vacuum channel 5245 is recessed into the upper surface of the manifold supporting the perforated belt 5230. Each vacuum manifold also includes center pillars 5250 located between the through holes 5240 and aligned in a line below the center of the vacuum channel 5245. The center pillars 5250 effectively separate the vacuum channel 5245 into two parallel vacuum channels on either side of the row of central pillars. The center pillars 5250 also provide support for the belt 5230. Without the center pillars 5250, the belt 5230 can be exposed to the longer unsupported areas and potentially sucked into the through holes 5240. This can lead to three-dimensional bending (bending perpendicular to the cutting radius at the cutting radius) of the wafers 45 that can damage the solar cells and hinder the cutting process.

As shown in Figs. 65A to 65B and Figs. 66 to 67, the through holes 5240 in the illustrated example include the low vacuum chamber 5260L (the flat region 5235F and the transition region 5235T in Fig. 62A) The high vacuum chamber 5260H (cut region 5235C in Fig. 62A), and the other low vacuum chamber 5260L (the post-cut region 5235PC in Fig. 62A). This arrangement provides a smooth transition between the low vacuum and high vacuum regions within the vacuum channel 5245. [ As the through holes 5240 provide sufficient flow resistance. If the area corresponding to the hole remains completely open, the air flow will not be completely deflected in this one hole, and the following areas will hold the vacuum. The vacuum channel 5245 contributes to ensuring that the vacuum belt holes 5255 will always have a vacuum and will not be in a dead spot when located between the through holes 5240.

65A-65B, and referring also to FIG. 67, the perforated belts 5230 may be used to hold the wafer 45 or the leading edge of the cut solar cell 10 and the trailing trailing edges 527 may optionally include two rows of holes 5255 that are selectively arranged so that the belt is always under vacuum as it travels along the manifold. In particular, the staggered arrangement of the holes 5255 in the illustrated example ensures that the edges of the wafer 45 or cut solar cell 10 always overlap with at least one hole 5255 in each belt 5230. This contributes to preventing the edges of the wafer 45 or the cut solar cell 10 from being lifted from the belt 5230 and the manifold 5235. Any other suitable arrangement of holes 5255 may be used. In some variations, the arrangement of the holes 5255 does not guarantee that the edges of the wafer 45 or cut solar cell 10 are always under vacuum.

In the illustrated example of the cutting mechanism 5210, perforated moving belts 5230 move along the two narrow strips defined by the widths of the belts along the lateral edges of the solar cell wafer, . Accordingly, the solar cell wafers are not cured within the area of the bottom surface of the solar cell wafer that is not contacted by the belts 5230, for example, without risk of damage to the soft material during the cutting process And may include soft materials such as adhesives.

In alternative embodiments, the cutting mechanism 5210 may be configured to have a width that is approximately equal to the width of the solar cell wafer 45, for example, perpendicular to the direction of its travel, rather than the two perforated moving belts, A single perforated moving belt 5230 having a width can be utilized. Optionally, the cutting mechanism 5210 may comprise three, four or more perforated moving belts 5230, which may be arranged side by side in parallel and optionally spaced apart from one another. The cutting mechanism 5210 may utilize a single vacuum manifold 5235 that may have a width approximately equal to the width of the solar cell wafer 45, for example, perpendicular to the direction of travel of the solar cells . Such a vacuum manifold may be employed, for example, with a single full width perforated moving belt 5230, or two or more such belts arranged side by side and selectively spaced apart from one another. The cutting mechanism 5210 may be supported by two curved vacuum manifolds 5235, which are, for example, each vacuum manifold having the same curvature and arranged side by side in parallel and spaced apart, A single perforated moving belt 5230 may be included. The cutting mechanism 5210 may include three or more curved vacuum manifolds 5235 arranged side by side and spaced apart from one another, each vacuum manifold having the same curvature. Such an arrangement may be employed, for example, with a single full width perforated moving belt 5230, or with three or more such belts arranged side by side and selectively spaced apart from one another. The cutting mechanism may include, for example, a perforated moving belt 5230 for each vacuum manifold.

Any suitable arrangement of perforated moving belts and vacuum manifolds may be utilized within the cutting mechanism 5210. [

As noted above, in some variations, the scribed solar cell wafers 45 cut with the cutting mechanism 5210 are not cured on their top and / or bottom surfaces prior to cutting, Materials and / or other soft materials. The scribing of solar cell wafers and the application of such soft materials could occur in any order.

Perforated belts 5230 in the cutting mechanism 5210 (and perforated belts 1060 in the cutting tool 1050) can be used to hold the solar cell wafers 45 at about 40 millimeters per second (mm / s to about 2000 mm / s or greater, or about 40 mm / s to about 500 mm / s or greater, or about 80 mm / s or greater. The cutting of the solar cell wafers 45 can be facilitated at higher speeds at lower speeds.

Referring now to Figure 68, there will be some separation between the leading and trailing edges 527 of adjacent cut-off cells 10 due to the geometry of the bend around the curve when cut, Creating a wedge-shaped gap between the cells. There is a possibility that the edges of adjacent cut-off cells could be contacted and damaged each other if the cut-out cells were to return to a planar co-planar orientation without first increasing the separation between the cut-out cells. It is therefore advantageous to remove the severed cells from the belts 5230 (or belts 1060) while they are still supported by the surface of the curve.

Figures 69A-69G show that the cut solar cells can be removed from the belts 5230 (or the belts 1060) and can have improved separation between the cut solar cells to provide one or more additional moving belts Lt; RTI ID = 0.0 &gt; and / or &lt; / RTI &gt; moving surfaces. 69A, truncated solar cells 10 move faster than the belts 5230, and thus one or more conveyance belts 5265 that increase the separation between the cut solar cells 10 (Not shown). The transfer belts 5265 may be located, for example, between the two belts 5230. In the example of Figure 69b, the cut wafers 10 are separated by a downwardly sliding slide 5270 located between the two belts 5230. In this example, the belts 5230 are placed on each cut cell 10 to release the cut cell to the slide 5270 while the uncut portion of the wafer 45 is still held by the belts 5230. [ (E.g., not in a vacuum) region of the manifolds 5235. Providing an air cushion between the cut cell 10 and the slide 5270 assists in ensuring that both the cell and the slide are not worn during operation, 10 slide faster from the wafer 45, thereby enabling faster cutting belt operating speeds.

In the example of Figure 69c carriages 5275A in a rotating " Ferris Wheel " arrangement 5275 move the cut solar cells 10 from the belts 5230 to one or more belts 5280 ).

In the example of Figure 69d a rotating roller 5285 is used to drive actuators 5285A to pick up the cut solar cells 10 from the belts 5230 and place them on the belts 5280 Lt; / RTI &gt;

69E, the carriage actuator 5290 includes a carriage 5290A and an extendable and retractable actuator 5290B mounted on the carriage. The carriage 5290A positions the actuator 5290B to remove the cut solar cell 10 from the belts 5230 and then drives the actuator 5290B to position the cut solar cell on the belts 5280. [ To move back and forth.

69F, the carriage track arrangement 5295 positions the carriages 5295A to remove cut solar cells 10 from the belts 5230, and then cuts the photovoltaic cells 10, Includes carriages 5295A that are attached to a moving belt 5300 that positions carriages 5295A for positioning the carriages 5280 on the belts 5280, And is released from the belt 5280 or pulled.

In the example of Figure 69g an inverted vacuum belt arrangement 5305 is used to deliver the cut solar cells 10 from belts 5230 to belts 5280 through one or more moving perforated belts, .

Figs. 70A-70C provide orthographic views of a further variation of the exemplary mechanism described above with reference to Figs. 62A-62B and the subsequent figures. This variant 5310 allows the severed solar cells 10 to be removed from the perforated belts 5230 that transport the uncut wafer 45 into the cut region of the apparatus, Conveying belts 5265 are used. 71A-71B illustrate this variation of the cutting mechanism in two different stages of operation. 71A, the uncut wafer 45 is approaching the cut region of the apparatus, the wafer 45 in FIG. 71B enters the cut region, and the two cut solar cells 10 are moved Separated from the wafer, and then further separated from each other as they are conveyed by the conveyance belts 5265. [

In addition to the features described above, Figures 70A-71B show multiple vacuum ports 5315 on each manifold. The use of multiple ports per manifold may allow more control over variations of the vacuum along the length of the top surface of the manifold. For example, other vacuum ports 5315 may selectively communicate with other vacuum chambers (e.g., 5260L and 5260H of Figures 66 and 72B) to provide different vacuum pressures along the manifold and / Or may be selectively connected to other vacuum pumps. 70A-70B also show the complete paths of the wheels 5325, the upper surfaces of the vacuum manifolds 5235, and the perforated belts 5230 circulating the wheels 5320. The belts 5230 may be driven by, for example, wheels 5320 or wheels 5325. [

72A and 72B show perspective views of a portion of a vacuum manifold 5235 overlaid on a portion of a perforated belt 5230 with respect to variants of FIGS. 70A-71B, FIG. 72A is a close- Lt; / RTI &gt; 73A shows a top view of a portion of a vacuum manifold 5235 overlaid with a perforated belt 5230 and FIGURE 73B shows a cross section of the same vacuum manifold and perforated belt arrangement taken along the CC line shown in FIGURE 73A / RTI &gt; 73B, the relative orientations of the through-holes 5240 can be changed along the length of the vacuum manifold, so that each through hole is orthogonal to a part of the upper surface of the manifold directly above the through-hole . 74A shows another top view of a vacuum manifold (part of 5235) overlaid with perforated belt 5230 and vacuum chambers 5260L and 5260H are shown in partial perspective views. 74B shows a close-up view of a part of FIG. 74A.

Figs. 75A-75G illustrate some exemplary hole patterns that may optionally be used for perforated vacuum belts 5230. Fig. A common characteristic of these patterns is that the straight edge of the wafer 45 or the cut solar cell 10 that intersects the pattern orthogonal to the long axis of the belt at any location on the belt always has at least one hole (5255). The patterns may include, for example, two or more rows of staggered square or rectangular holes (Figure 75a, Figure 75d), two or more rows of staggered circular holes (Figure 75b, Figure 75e, Two or more columns of photographic slots (Figs. 75C, 75F), or any other suitable arrangement of holes.

There is disclosed herein a high efficiency photovoltaic module comprising silicon solar cells arranged in a superimposed shingled manner to form supercells and electrically connected by conductive bonds between adjacent and overlapping solar cells, The supercells are arranged in columns that are physically parallel within the solar module. The supercell may comprise any suitable number of solar cells. The super cells may have a length that substantially extends over the entire length or width of the photovoltaic module, for example, or two or more super cells may be arranged end to end in a row. This arrangement obscures the electrical interconnections of the solar cell to the solar cell, and thus can be used to create a visually attractive photovoltaic module with little or no contrast between adjacent series-connected solar cells.

Cell metallization patterns that enable stencil printing of metallization onto the front (and optionally) rear surfaces of the solar cells are further disclosed herein. As used herein, the term " stencil printing " of cell metallization refers to the process of transferring a metallization material (e.g., a silver paste) onto a solar cell surface through patterned openings in the otherwise impermeable sheet of material . The stencil may be, for example, a patterned stainless steel sheet. The patterned apertures in the stencil are entirely free of stencil material and do not, for example, contain any mesh or screen. The absence of mesh or screen material within the patterned stencil apertures distinguishes " stencil printing " as used herein from " screen printing ". In contrast, in screen printing, the metallization material is applied onto the solar cell surface through a screen (e.g., a mesh) that supports the patterned impermeable material. The pattern includes openings in the impermeable material through which the metallization material is applied to the solar cell. The support screen extends over openings in the impermeable material.

Compared with screen printing, stencil printing of cell metallization patterns includes narrower line widths, higher aspect ratios (height to line width), better line uniformity and definition, and longer persistence stencils than stencil To provide a number of advantages. However, stencil printing may not be able to print 'islands' with one path as may be required in conventional three bus bar metallization designs. In addition, stencil printing is not limited in the plane of the stencil during printing, and it may be desirable to print the metallization pattern that would require the stencil in one path to include unsupported structures that could interfere with the placement and use of the stencil I can not. For example, because stencil printing could include unsupported tongues of sheet material defined by openings for the bus bars and openings for the fingers, a single stencil for such a design could be used, The metallization fingers arranged in parallel may not be able to print in one path the metallization pattern interconnected by bus bars or other metallization features that run perpendicular to the fingers. The tongues may not be limited to other parts of the stencil to be placed within the plane of the stencil during printing by physical connections, could move out of the plane, and could alter the placement and use of the stencil.

Accordingly, attempts at using stencils to print conventional solar cells require two passages for front side metallization with two different stencils or stencil printing steps combined with a screen printing step, Quot; stitching &quot; problem, which increases the total number of &lt; / RTI &gt; The stitching further complicates the processes, and additional printing and related steps increase the cost. Stencil printing is thus not common to solar cells.

As will be described further below, the front metallization patterns described herein may include an array of fingers (e.g., parallel lines) that are not interconnected by the front metallization pattern. These patterns may be stencil-printed in a single pass with a single stencil, since the required stencil need not include unsupported portions or structures (e.g., tongues). Because these front metallization patterns do not provide substantial current spreading or electrical conduction that is orthogonal to the fingers, the metallization pattern itself does not provide for interconnecting standard size solar cells and spaced solar cells with copper ribbons Lt; RTI ID = 0.0 &gt; solar cells. &Lt; / RTI &gt; However, the front metallization patterns described herein may be applied to a shading of rectangular solar cells as described herein in which a portion of the front metallization pattern of the solar cell overlaps and is conductively coupled to the back metallization pattern of the adjacent solar cell Lt; RTI ID = 0.0 &gt; batches. &Lt; / RTI &gt; This is because the overlapping back metallization of the adjacent solar cells can provide current spreading or electrical conduction orthogonal to the fingers in the front metallization pattern.

For a more detailed understanding of the photovoltaic modules described herein, reference is now made to FIG. 1, which illustrates a method for fabricating a solar cell module in accordance with an embodiment of the present invention, which includes the ends of adjacent solar cells that are overlapped and electrically connected to form the supercell 100, Sectional view of a string of series-connected solar cells 10 arranged. Each solar cell 10 includes a semiconductor diode structure and electrical contacts to the semiconductor diode structure that can be provided to an external load when the current generated in the solar cell 10 is illuminated by light.

In the examples described herein, each solar cell 10 is a rectangular crystalline silicon solar cell having front (sun side) and rear (light side) metallization patterns that provide electrical contact to opposite sides of the np junction Battery, wherein the front metallization pattern is disposed on an n-type conductive semiconductor layer, and the rear metallization pattern is disposed on a p-type conductive semiconductor layer. However, other material systems, diode structures, physical dimensions, or electrical contact arrangements can be used when appropriate. For example, the front (sun side) metallization pattern may be disposed on a p-type conductive semiconductor layer, and the rear (light shielding) metallization pattern may be disposed on an n-type conductive semiconductor layer have.

Referring back to FIG. 1, neighboring solar cells 10 in the supercell 100 are electrically connected to the back metallization pattern of the adjacent solar cell by electrically connecting the metallization pattern of one front solar cell to the back metallization pattern of the adjacent solar cell. And are directly and electrically connected to each other in the overlapping region by the adult bonding material. Suitable electrically conductive bonding materials may include, for example, electrically conductive adhesives and electrically conductive adhesive films and adhesive tapes, and conventional solders.

Referring again to Figure 2, Figure 2 illustrates an exemplary rectangular photovoltaic module 200 including six rectangular supercells 100 each having a length approximately equal to the length of the long sides of the photovoltaic module, Respectively. The supercells are arranged in six parallel rows with their long sides oriented parallel to the long sides of the module. A similarly configured photovoltaic module may include rows of supercells of this side length that are more or less than those shown in this example. In other variations, the supercells may have a length approximately equal to the length of the short side of each rectangular photovoltaic module, and may be parallel to their long sides oriented parallel to the short sides of the module Lt; / RTI &gt; In another arrangement, each row may comprise two or more supercells, for example, which may be interconnected electrically in series. The modules may have, for example, short sides having a length of about 1 meter and long sides having a length of, for example, about 1.5 meters to about 2.0 meters. Any other suitable shapes (e.g., square) and dimensions for the solar modules may also be used. In this example, each supercell includes 72 rectangular solar cells each having a width of approximately 156 mm and a length approximately equal to 1/6 of the width of a wafer of pseudo-square, each 156 mm (mm) square. Any other suitable number of any other suitable number of rectangular solar cells may also be used.

76 illustrates an exemplary front metallization pattern on a rectangular solar cell 10 that enables stencil printing as described above. The front metallization pattern may be formed of silver paste, for example. 76, the front metallization pattern includes a plurality of fingers 6015 that run parallel to each other, are parallel to short sides of the solar cell, and are orthogonal to long sides of the solar cell. The front metallization pattern also includes respective contact pads 6020 located at the ends of the fingers 6015 so as to extend parallel to the edges of the long side of the solar cell and to define adjacent contact pads 6020 Lt; / RTI &gt; If present, each contact pad 6020 may be electrically conductive (ECA), solder, or other electrically conductive material used to electrically couple the front side of the illustrated solar cell to the overlapping portion of the back side of the adjacent solar cell Creating areas for individual beads of the conductive binding material. The pads may have, for example, circular, square, or rectangular shapes, but any suitable pad shape may be used. As an alternative to the use of individual beads of electrically conductive bonding material, it may be advantageous to provide a continuous, continuous, continuous layer of ECA, solder, conductive tape, or other electrically conductive bonding material disposed along the edge of the long side of the solar cell Not only can lines or dashed lines interconnect some or all of the fingers, but also the solar cells can be coupled to adjacent and overlapping solar cells. Such dashed or continuous lines of electrically conductive material may be combined with the conductive pads at the ends of the fingers or may be used without such conductive pads.

The solar cell 10 may have, for example, a length of about 156 mm, a width of about 26 mm and an aspect ratio of about 1: 6 (the length of the short side / the length of the long side). Six such solar cells can be fabricated on a standard 156 mm x 156 mm silicon wafer and are separated (diced) to provide solar cells as illustrated hereinafter. In other variations, eight solar cells 10 with dimensions of 19.5 mm x 156 mm and corresponding aspect ratios of about 1: 8 can be fabricated from standard silicon wafers. More generally, solar cells 10 may have aspect ratios of, for example, from about 1: 2 to about 1: 20, and may be fabricated from standard size wafers or wafers of any other suitable dimensions .

76, the front metallization pattern may include, for example, about 60 to about 120 fingers per 156 mm wide cell, for example about 90 fingers. Fingers 6015 may have, for example, widths from about 10 microns to about 90 microns, for example, about 30 microns. The fingers 6015 may have heights of, for example, about 10 microns to about 50 microns perpendicular to the surface of the solar cell. The finger heights can be, for example, about 10 microns or more, about 20 microns or more, about 30 microns or more, about 40 microns or more, or about 50 microns or more. Pads 6020 may have diameters (circles) or side lengths (squares or rectangles) of, for example, from about 0.1 mm to about 1 mm, for example, about 0.5 mm.

The rear metallization pattern for a rectangular solar cell 10 may be, for example, a row of discrete contact pads, a row of interconnected contact pads, or a continuous, contiguous succession of edges on the long side of the solar cell A bus bar may be included. However, such contact pads or bus bars are not required. If the front metallization pattern includes contact pads 6020 that are arranged along one edge of the long side of the solar cell, then the rows or rows of contact pads (if any) in the back metallization pattern And is arranged along the edge of the other long side of the solar cell. The rear metallization pattern may further comprise a metal back contact substantially covering all of the remaining rear surface of the solar cell. The exemplary back metallization pattern of Figure 77a includes the rows of separate contact pads 6025 in combination with the metal back contact 6030 as described above and the exemplary back metallization pattern of Figure 77b is similar to that described above And a continuous bus bar 35 coupled with the same metal rear contact 6030.

In a shunged super cell, the front metallization pattern of the solar cell is electrically coupled to the overlapping portion of the back metallization pattern of the adjacent solar cell. For example, when the solar cells include front metallization contact pads 6020, each contact pad 6020 can be aligned and joined with a corresponding rear metallization contact pad 6025 (if present) The rear metallization bus bar 35 (if present), or may be coupled to the metal backside contact 6030 (if present) on the adjacent solar cell. This may be accomplished, for example, by discrete portions (e.g., beads) of electrically conductive bonding material disposed on each contact pad 6020, or in parallel to the edges of the solar cell, May be embodied as a dashed line or a continuous line of electrically conductive coupling material that electrically interconnects two or more of the pads 6020.

If the solar cells are deficient in the front metallization contact pads 6020, then each front metallization pattern finger 6015, for example, is aligned with the corresponding rear metallization contact pad 6025 (if present) Or may be associated with a rear metallization bus bar 35 (if present), or may be associated with a metal back contact 6030 (if present) on the adjacent solar cell. This may be accomplished, for example, by discrete portions (e.g., beads) of electrically conductive bonding material disposed on the overlapping ends of each finger 6015, May be embodied as a dashed line or a continuous line of electrically conductive coupling material that electrically interconnects two or more of the fingers 6015. [

As described above, portions of the overlapping back metallization of the adjacent solar cell, e.g., the back bus bar 35 and / or the back metal contact 6030, if present, Lt; RTI ID = 0.0 &gt; current &lt; / RTI &gt; In variations that utilize dashed or continuous lines of electrically conductive material as described above, the electrically conductive bonding material may be characterized by current diffusion and electrical conduction perpendicular to the fingers in the front metallization pattern Can be provided. The overlapping rear metallization and / or the electrically conductive bonding material may, for example, carry current to bypass broken fingers or other finger breaks in the front metallization pattern.

The back metallized contact pads 6025 and the bus bar 35, if present, can be formed of a silver paste that can be applied, for example, by stencil printing, screen printing or any other suitable method. The metal rear contact 6030 may be formed of, for example, aluminum.

Any other suitable rear metallization patterns and materials may also be used.

78 illustrates an exemplary front metallization pattern on a square solar cell 6300 that can be diced to form a plurality of rectangular solar cells, each having the front metallization pattern shown in Fig.

79 illustrates an exemplary back metallization pattern on a square solar cell 6300 that can be diced to form a plurality of rectangular solar cells each having a rear metallization pattern as shown in Fig.

The front metallization patterns described herein may enable stencil printing of front metallization on three standard printer solar cell production lines. For example, the production process may include stencil or screen printing a silver paste onto the back side of a square solar cell to form rear contact pads or a rear silver bus bar using a first printer, Drying the aluminum contact, then stencil or screen printing the aluminum contact on the back surface of the solar cell using a second printer, and then drying the aluminum contact, followed by a single stencil step to the third printer A step of stencil printing a silver paste on the front surface of the solar cell to form a complete front metallization pattern using a single stencil, a process of drying the silver paste, and a process of firing the solar cell . &Lt; / RTI &gt; These printing and related steps may be generated in any other order, if appropriate, or omitted.

The use of a stencil to print the front metallization pattern enables the production of narrower fingers as possible with screen printing, which can improve solar cell efficiency and reduce the use of silver and thus the production cost. Stencil printing of the front metallization pattern in a single stencil printing step with a single stencil may be accomplished, for example, by screen printing, in which multiple stencils or stencil printing are printed in a superimposed fashion to define features extending in different directions Lt; RTI ID = 0.0 &gt; a &lt; / RTI &gt; uniform metallization pattern without exhibiting stitching that can occur when used for a &lt; / RTI &gt;

After the front and back metallization patterns are formed on the square solar cells, each square solar cell can be separated into two or more rectangular solar cells. This can be done, for example, by laser scribing followed by cutting or any other suitable method. The rectangular solar cells may be arranged in a later-overlapping shingled manner and may be electroconductively coupled to each other as described above to form the super cells. Disclosed herein are methods for manufacturing solar cells having reduced charge recombination losses at the edges of the solar cell, for example, without cut edges that promote charge recombination. The solar cells may be, for example, silicon solar cells, and more specifically HIT silicon solar cells. Shingled (superimposed) super cell arrangements of these solar cells are also disclosed herein. The individual solar cells in such a supercell may have narrow rectangular geometries (e.g., strip-like features) having long sides of adjacent solar cells arranged to overlap.

The main challenge for a cost-effective implementation of high efficiency solar cells, such as HIT solar cells, is that the need for large amounts of metal to carry large currents from one such high efficiency solar cell to an adjacent, . This process of dicing these high efficiency solar cells into narrow rectangle solar cell strips and subsequent superimposing of the overlapping portions of overlapping portions of adjacent solar cells to form a series- The process of arranging the resulting solar cells with a shading pattern provides an opportunity to reduce module cost through process simplification. This is because tabbing process steps that are conventionally required to interconnect adjacent solar cells with metal ribbons can be eliminated. This shingling approach also reduces current through the solar cells (because the individual solar cell strips may have smaller active areas) and by reducing the current path length between adjacent solar cells Module efficiency, all of which tend to reduce resistive losses. The reduced current can also enable replacement of more expensive and less resistive conductors (e.g., silver) with less expensive but more resistant conductors (e.g., copper) without significant loss of performance. This shingling approach can also reduce the inactive module area by removing interconnect ribbons and associated contacts from the fronts of the solar cells.

Conventional sized solar cells may have substantially square front and back surfaces, for example, with dimensions of about 156 millimeters (mm) x about 156 mm. In the shingling scheme described above, such a solar cell is diced into two or more (e.g., two to twenty) 156 mm long solar cell strips. The potential difficulty with this shingling approach is that dicing conventional size solar cells into thin strips increases the cell edge length per active area of the solar cell compared to conventional size solar cells, Lt; RTI ID = 0.0 &gt; charge / discharge &lt; / RTI &gt;

For example, FIG. 80 shows a HIT solar cell 7100 having front and back dimensions of about 156 mm by about 156 mm, with several solar cells, each having a narrow rectangular front and back sides of dimensions of about 156 mm by about 40 mm, Schematically illustrates the process of dicing into strips 7100a, 7100b, 7100c, 7100d (the 156 mm long sides of the solar cell strips extend into the interior of the drawing). In the illustrated example, the HIT cell 7100 includes an n-type microcrystalline base 5105, which includes a square front with a thickness of, for example, about 180 microns and dimensions of about 156 mm x about 156 mm, You can have a back side. A layer of about 5 nanometers (nm) thick of intrinsic amorphous Si: H (a-Si: H) and about 5 nm thick of n + doped a-Si: H (both layers denoted together by reference numeral 7110) Is deposited on the entire surface of the crystalline silicon base 7105. A thick film 5120 of about 65 nm thickness of a transparent conductive oxide (TCO) is deposited on the a-Si: H layers 7110. Conductive metal grid lines 7130 disposed on the TCO layer 7120 provide electrical contact to the front surface of the solar cell. A layer of about 5 nm thickness of intrinsic a-Si: H and a layer of about 5 nm thickness of p + doped a-Si: H (both layers together denoted by reference numeral 7115) . A conductive metal grid lines 7135 disposed on the a-Si: H layers 7115 and disposed on the TCO layer 7125 are formed on the a-Si: H layers 7115 in such a manner that a film 7125 having a thickness of about 65 nm of a transparent conductive oxide (TCO) (The aforementioned dimensions and materials are intended to be illustrative rather than restrictive and may be varied if appropriate).

Still referring to FIG. 80, when HIT solar cell 7100 is cut by conventional methods to form strip solar cells 7100a, 7100b, 7100c, and 7100d, newly formed cut edges 7140, Is not passive. These unpassivated edges contain high density of dangling chemical bonds, which enhances charge recombination and reduces the performance of the solar cells. In particular, the cut surface exposing the cut surface 7145 and the heavily doped front electric field (in the layers 7110) that expose the n-p junction can be significantly improved without passivating. In addition, when conventional laser cutting or laser scribing processes are used to dice the solar cell 7100, thermal damage, such as amorphous silicon recrystallization 7150, can be generated in the newly formed edges have. As a result of the non-passivated edges and the thermal damage, new edges formed on the cut solar cells 7100a, 7100b, 7100c, 7100d when conventional fabrication processes are used are short- circuit current, the open circuit voltage, and the pseudo charge rate of the solar cells. This leads to a significant reduction in the performance of the solar cells.

The formation of the edges to promote the recombination during the dicing of a conventional sized HIT solar cell with narrower solar cell strips can be avoided by the method illustrated in Figures 85A-85J. This method can be used to electrically isolate the pn junction and the heavily doped front electric field from the cut edges that could otherwise serve as recombination sites for minority carriers Using isolation trenches on the front and back surfaces. The trench edges are not defined by conventional cutting, but are instead defined by chemical etching or laser patterning, followed by deposition of a passivation layer, such as a TCO, which passivates both the front and back trenches. In contrast to the heavily doped regions, the base doping is low enough to reduce the likelihood of electrons in the junction reaching the unspassed truncated edges of the base. In addition, a wafer dicing technique without kerf, thermal laser separation (TLS), can be used to cut the wafers and avoid potential thermal damage.

In the example illustrated in Figures 85A-85J, the starting material is a cut wafer of n-type monocrystalline silicon about 156 mm square, which may be a wafer of about 1 ohm-centimeter to about 3 ohm-centimeter May have a bulk resistivity, and may be, for example, about 180 microns thick (the wafer 7105 forms the base of the solar cells).

Referring to Figure 81A, the wafer 7105 as cut is typically texturized, acid washed, cleaned, and dried.

Next, in FIG. 81 (b), an intrinsic a-Si: H layer of about 5 nm thickness and a doped n + a-Si: H layer of about 5 nm thickness (both layers denoted by reference numeral 7110) Is deposited on the front side of the wafer 7105, for example, by plasma enhanced chemical vapor deposition (PECVD) at a temperature of about 150 ° C to about 200 ° C.

Next, in FIG. 81C, an about 5 nm thick intrinsic a-Si: H layer and a about 5 nm thick doped p + a-Si: H layer (both layers denoted by reference numeral 7115) Is deposited on the backside of the wafer 7105 by, for example, PECVD at a temperature of about 150 ° C to about 200 ° C.

Next, in Fig. 81D, the front a-Si: H layers 7110 are patterned to form device isolation trenches 7112. Fig. Device isolation trenches 7112 typically pass through the layers 7110 to reach the wafer 7105 and may have widths of, for example, from about 100 microns to about 1000 microns, for example, about 200 microns. Typically, the trenches have the smallest width that can be used depending on the accuracy of the patterning technique and subsequently applied cutting techniques. Patterning of the trenches 7112 may be accomplished using, for example, laser patterning or chemical etching (e.g., ink jet wet patterning).

Next, in Fig. 81E, the rear a-Si: H layers 7115 are patterned to form device isolation trenches 7117. [ Similar to device isolation trenches 7112, device isolation trenches 7117 typically penetrate layers 7115 to reach wafer 7105, and may include, for example, about 100 microns to about 1000 microns, for example, And may have widths of about 200 microns. Patterning of the trenches 7117 may be implemented using, for example, laser patterning or chemical etching (e.g., ink jet wet patterning). Each trench 7117 is aligned with a corresponding trench 7112 on the front of the structure.

Next, in FIG. 81F, a TCO layer 7120 of about 65 nm thickness is deposited on the patterned front a-Si: H layers 7110. This can be done, for example, by physical vapor deposition (PVD) or by ion plating. The TCO layer 7120 fills the trenches 7112 in the a-Si: H layers 7110 and coating the outer edges of the layers 7110, thereby passivating the surfaces of the layers 7110. TCO layer 7120 also functions as an anti-reflective coating.

Next, a thick TCO layer 7125 of about 65 nm is deposited on the patterned backside a-Si: H layers 7115 in Figure 81g. This can be done, for example, by PVD or by ion plating. The TCO layer 7125 fills the trenches 7117 in the a-Si: H layers 7115 and coats the outer edges of the layers 115, thereby passivating the surfaces of the layers 7115. The TCO layer 7125 also functions as an anti-reflective coating.

Next, conductive (e.g., metal) front grid lines 7130 are screen printed onto the TCO layer 7120 in Figure 81h. The grid lines 7130 may be formed, for example, with low temperature silver pastes.

Next, conductive (e.g., metal) backplane grid lines 7135 are screen printed onto the TCO layer 7125 in Figure 81i. The grid lines 7135 may be formed of, for example, low temperature silver pastes.

Next, after the deposition of the grid lines 7130 and the grid lines 7135, the solar cell is cured at a temperature of, for example, about 200 DEG C for about 30 minutes.

Next, in FIG. 81J, the solar cell is separated into solar cell strips 7155a, 7155b, 7155c, and 7155d by dicing the solar cell at the center of the trenches. Dicing may be accomplished using conventional laser scribing and mechanical cutting at the centers of the trenches to cut the solar cell in line with the trenches. Alternatively, the dicing may be performed by a thermal laser separation process (e.g., a laser-induced thermal annealing process, such as a laser-induced thermal annealing process Jenoptik AG). &Lt; / RTI &gt; The latter approach can avoid thermal damage to the edges of the solar cells.

The resulting strip solar cells 7155a-7155d are different from the strip solar cells 7100a-7100d shown in FIG. In particular, the edges of the a-Si: H layers 7110 and the a-Si: H layers 7115 in the solar cells 7140a-7140d are formed by etching or laser patterning, not by mechanical cutting. In addition, the edges of the layers 7110 and layers 7115 in the solar cells 7155a-7155d are passivated by the TCO layer. As a result, solar cells 7140a-7140d are missing truncated edges that promote the charge recombination present in solar cells 7100a-7100d.

The method described with respect to Figures 81A-81J is intended to be exemplary rather than limiting. The steps described as being performed in a particular order may be performed in different orders or in parallel as appropriate. The steps and material layers may be omitted, added, or substituted as appropriate. For example, if copper metallization is used, then additional patterning and seed layer deposition steps may be included in the process. Also, in some variations, only the front a-Si: H layers 7110 are patterned to form device isolation trenches, and device isolation trenches are not formed in the back a-Si: H layers 7115. In other variations, only the rear a-Si: H layers 7115 are patterned to form device isolation trenches, and device isolation trenches are not formed in the front a-Si: H layers 7115. 81A-81J, dicing also occurs at the centers of the trenches in these variations.

The formation of the edges for enhancing the recombination during the dicing of a conventional size HIT solar cell with narrow solar cell strips is also similar to that used in the method described with respect to Figures 81A-81J, Can be avoided by the method illustrated in Figure 82j.

82A, in this example, the starting material is again a cut wafer 7105, which is n-type monocrystalline silicon of about 156 mm square, which may be, for example, about 1 ohm-centimeter to about 3 ohm- Cm &lt; 2 &gt;, and can be, for example, about 180 microns thick.

Referring to FIG. 82B, trenches 7160 are formed in the front surface of the wafer 7105. These trenches can have, for example, depths from about 80 microns to about 150 microns, for example, about 90 microns, and can have widths from about 10 microns to about 100 microns, for example. Device isolation trenches 7160 define the geometry of the solar cell strips formed from the wafer 7105. As will be described below, the wafer 7105 will be cut to conform to these trenches. Trenches 7160 can be formed, for example, by conventional laser wafer scribing.

Next, in Fig. 82C, the wafer 7105 is typically textured, pickled, cleaned, and dried. The etch typically removes damage that is initially present in the surfaces of the wafer 7105 as it is cut or that is caused during formation of the trenches 7160. The etch may also cause the trenches 7160 to widen and deepen.

82d, an intrinsic a-Si: H layer of about 5 nm thickness and a doped n + a-Si: H layer of about 5 nm thickness (both layers denoted by reference numeral 7110) Is deposited on the front surface of the wafer 7105 by, for example, PECVD at a temperature of 150 캜 to about 200 캜.

Next, in FIG. 82E, an intrinsic a-Si: H layer with a thickness of about 5 nm and a doped p + a-Si: H layer with a thickness of about 5 nm (both layers denoted by reference numeral 7115) Is deposited on the backside of the wafer 7105 by, for example, PECVD at a temperature of about 150 ° C to about 200 ° C.

Next, in FIG. 82F, a TCO layer 7120 of about 65 nm thickness is deposited on the front a-Si: H layers 7110. This can be done, for example, by physical vapor deposition (PVD) or by ion plating. TCO layer 7120 can fill trenches 7160 and typically coat the walls and bottoms of trenches 7160 and the outer edges of layers 7110 and thus passivate the coated surfaces . TCO layer 7120 also functions as an anti-reflective coating.

Next, in Figure 82g, a thick TCO layer 7125 of about 65 nm is deposited on the back a-Si: H layers 7115. This can be done, for example, by PVD or by ion plating. The TCO layer 7125 passivates the surfaces of the layers 7115 (e.g., including the outer edges) and also functions as an anti-reflective coating.

Next, conductive (e.g., metal) front grid lines 7130 are screen printed onto the TCO layer 7120 in Figure 82h. The grid lines 7130 may be formed, for example, with low temperature silver pastes.

Next, conductive (e.g., metal) backplane grid lines 7135 are screen printed onto the TCO layer 7125 in Figure 82i. The grid lines 7135 may be formed of, for example, low temperature silver pastes.

Next, after the deposition of the grid lines 7130 and the grid lines 7135, the solar cell is cured at a temperature of, for example, about 200 DEG C for about 30 minutes.

Next, in Fig. 82J, the solar cell is separated into solar cell strips 7165a, 7165b, 7165c, and 7165d by dicing the solar cell in the trenches. Dicing may be accomplished using conventional mechanical cutting at the center of the trenches to cut the solar cell in line with the trenches. Alternatively, the dicing may be implemented using, for example, a thermal laser separation process as described above.

The resulting strip solar cells 7165a-7165d are different from the strip solar cells 7100a-7100d shown in FIG. In particular, the edges of the a-Si: H layers 7110 in the solar cells 7165a-7165d are formed by etching, not by mechanical cutting. In addition, the edges of the layers 7110 in the solar cells 7165a-7165d are passivated by the TCO layer. As a result, solar cells 7165a-7165d are missing truncated edges that promote charge recombination in solar cells 7100a-7100d.

The methods described with respect to Figures 82a-82j are intended to be illustrative rather than restrictive. Steps described as being performed in a particular order may be performed in parallel or in different orders as appropriate. The steps and materials and layers may be omitted, added, or substituted as appropriate. For example, if copper metallization is used, then additional patterning and seed layer deposition steps can be included in the process. Also, in some variations, the trenches 7160 may be formed on the backside of the wafer 7105 rather than on the front side of the wafer 7105. [

The methods described with respect to Figures 81A-81J and 86A-86J are applicable to both n-type and p-type HIT solar cells. The solar cells may be front emitters or back emitters. It may be desirable to apply a separation process to the side without the emitter. In addition, the use of device isolation trenches and passivation layers as described above to reduce recombination on cut wafer edges can be applied to other solar cell designs and solar cells using materials other than silicon.

Referring again to FIG. 1, the strings of the series-connected solar cells 10 formed by the above-described methods have end portions of adjacent solar cells overlapped and electrically connected to form the supercell 100, Can be advantageously arranged in a different manner. In the supercell 100, the adjacent solar cells 10 are electrically connected by an electrically conductive bonding material that electrically connects the front metallization pattern of one solar cell to the rear metallization pattern of the adjacent solar cell, And are electroconductively coupled to each other in the overlapped region. Suitable electrically conductive bonding materials may include, for example, electrically conductive adhesives and electrically conductive adhesive films and adhesive tapes, and conventional solders.

Referring again to Figures 5A-5B, Figure 5A illustrates an exemplary rectangular photovoltaic cell 100 comprising twenty rectangular supercells 100 each having a length approximately equal to half the length of the short sides of the photovoltaic module, Module 200 is shown. The supercells are arranged end to end in pairs so as to form ten rows of supercells, and the columns and long sides of the supercells are oriented parallel to the short sides of the photovoltaic module. In other variations, each column of supersells may comprise three or more supersells. Further, in other variations, the supercells can be arranged end to end in columns, and the columns and long sides of the supercells can be oriented parallel to the long sides of the rectangular photovoltaic module, And may be oriented parallel to the sides of the optical module. Moreover, the photovoltaic module may contain more or fewer supercells and more or fewer rows of supercells than is shown in this example.

In those variations where the supercells in each column are arranged such that at least one of them has a front end contact on the end of the supercell adjacent to the other supercell in the column, the selective gap 210 may be present to enable electrical contact to the front end contacts of the supercells 100 along the centerline of the photovoltaic module. In alternate embodiments in which each row of supersells includes three or more supersells, additional optional gaps between the supersells may similarly provide an electrical contact to the front end contacts located away from the sides of the solar module Lt; / RTI &gt;

5B illustrates another exemplary rectangular photovoltaic module 300 that includes ten rectangular supercells 100 each having a length approximately equal to the length of the short sides of the photovoltaic module. The supercells are arranged with their long sides oriented parallel to the short sides of the module. In other variations, the supercells may have lengths that are approximately equal to the length of the long sides of the rectangular photovoltaic module, and may be oriented with their long sides parallel to the long sides of the photovoltaic module . The supercells may also have lengths approximately equal to the length of the sides of the square solar module and may be arranged with their long sides oriented parallel to the side of the solar module. Further, the photovoltaic module may include more or less such side lengths of supercells as shown in this example.

5B also shows how the solar module 200 of FIG. 5A looks when there is no gap between adjacent supercells in the rows of solar cells within the solar module 200. FIG. Any other suitable arrangement of supercells 100 within the solar module may be used.

The following paragraphs provide additional, non-limiting aspects of the present invention.

1. Photovoltaic module,

Connected strings of rectangular or substantially rectangular solar cells having an average breakdown voltage of at least about 10 volts of &lt; RTI ID = 0.0 &gt; N &lt; / RTI &gt; 25, Grouped into one or more super cells comprising two or more of said solar cells arranged in series with long sides of the solar cells;

A single solar cell or group of &lt; N solar cells in the string of solar cells is not individually electrically connected in parallel with the bypass diode.

2. In the solar module of Item 1, N is an integer greater than or equal to 30.

3. In the solar module of Item 1, N is an integer greater than or equal to 50.

4. In the solar module of Item 1, N is an integer greater than or equal to 100.

5. The photovoltaic module according to Item 1, wherein the adhesive has a thickness of less than or equal to about 0.1 mm perpendicular to the solar cells between adjacent solar cells, and a thickness of about 1.5 w / m / k To form bonds with a thermal conductivity that is greater than or equal to.

6. The solar module of claim 1, wherein said N solar cells are grouped into a single super cell.

7. The solar cell module of claim 1, wherein the supercells are encapsulated with a polymer.

7A. In the photovoltaic module of Item 7, the polymer comprises a thermoplastic olefin polymer.

7B. In the photovoltaic module of Item 7, the polymer is interposed between the glass front sheet and the back sheet.

7C. In the photovoltaic module of Item 7B, the backsheet comprises glass.

8. The solar cell module according to Item 1, wherein the solar cells are silicon solar cells.

9. Photovoltaic module,

And a super cell substantially transverse to the entire length or width of the solar module parallel to the edge of the solar module, wherein the super cells are stacked and adjacent to each other in an electrically conductive and thermally conductive adhesive, A series connected string of N rectangular or substantially rectangular solar cells having a breakdown voltage of about 10 volts or more arranged in series with the long sides of the solar cells;

A single solar cell or group of &lt; N solar cells in the supercell is not individually electrically connected in parallel with the bypass diode.

10. In the photovoltaic module of Item 9, N> 24.

11. The solar cell module of claim 9, wherein the supercell has a length in the direction of a current flow of at least about 500 mm.

12. The photovoltaic module of claim 9, wherein the super cells are encapsulated within a thermoplastic olefin polymer interposed between the glass front and back sheets.

13. The supercell,

A plurality of silicon solar cells, each silicon solar cell comprising:

A rectangular or substantially rectangular front and rear surface having shapes defined by first and second oppositely disposed parallel long sides and two oppositely located short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern disposed on the front surface and including at least one front contact pad positioned adjacent the first long side;

And an electrically conductive backside metallization pattern disposed on the backside and comprising at least one backside contact pad located adjacent the second long side;

Wherein the silicon solar cells are aligned with first and second long sides of overlapping adjacent silicon solar cells, overlapping to electrically connect the silicon solar cells in series, Lt; / RTI &gt; contact pads on the silicon solar cells;

The front metallization pattern of each silicon solar cell includes a barrier configured to substantially limit the conductive adhesive bonding material to at least one front contact pad prior to curing the conductive adhesive bonding material during manufacture of the supercell .

14. The super cell of claim 13, wherein for each pair of adjacent and overlapping silicon solar cells, a barrier on one of the silicon solar cells is overlapped and hidden by a portion of the other silicon solar cell, Substantially confines the conductive adhesive bonding material to overlapping areas of the front surface of the silicon solar cell prior to curing of the conductive adhesive bonding material during manufacture of the supercell.

15. The cell of claim 13, wherein the barrier comprises at least one front contact pad positioned between the successive conductive lines and a first long side of the solar cell, the substantially full length of the first long side And a conductive line extending in parallel with the conductive line.

16. The supercell of clause 15, wherein said front metallization pattern comprises fingers electrically connected to said at least one front contact pads and proceeding orthogonally to said first long side, The fingers are electrically interconnected to provide multiple conductive passages from each finger to at least one front contact pad.

17. The supercell of clause 13, wherein said front metallization pattern comprises a plurality of discrete contact pads arranged in parallel rows adjacent and parallel to said first long side, And a plurality of features to form separate barriers for each separate contact pad substantially restricting the conductive adhesive bond material to the separate contact pads prior to curing the adhesive bond material.

18. The cell of claim 17, wherein the isolated barriers are adjacent to and larger than their corresponding separate contact pads.

19. The super-

A plurality of silicon solar cells, each silicon solar cell comprising:

Wherein the front and rear surfaces have a rectangular or substantially rectangular front and rear surfaces having shapes defined by first and second oppositely located parallel long sides and two opposedly positioned short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern disposed on the front surface and including at least one front contact pad positioned adjacent the first long side;

And an electrically conductive backside metallization pattern disposed on the backside and comprising at least one backside contact pad positioned adjacent the second long side;

The silicon solar cells are stacked with adjacent front and back contact pads on neighboring silicon solar cells which are overlapped to electrically connect the silicon solar cells in series and are electrically coupled to each other with a conductive adhesive bonding material, Aligned with the first and second elongated sides of the base plate;

Wherein the back metallization pattern of each silicon solar cell comprises a barrier configured to substantially restrict the conductive adhesive bonding material to the at least one rear contact pads prior to curing the conductive adhesive bonding material during manufacture of the supercell .

20. The cell of claim 19 wherein the back metallization pattern comprises one or more discrete contact pads arranged in parallel rows adjacent and parallel to the second long side, The plurality of features forming separate barriers for each separate contact pad substantially restricting the conductive adhesive bond material to the separate contact pads prior to curing the conductive adhesive bond material.

21. The cell of claim 20, wherein the discrete barriers are adjacent to their corresponding discrete contact pads. It is bigger than that.

22. A method of making a string of solar cells,

Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a plurality of rectangular silicon solar cells each having substantially the same length along its long axis; And

Arranging the rectangular silicon solar cells in series with long sides of adjacent solar cells superposed and electrically coupled to each other to electrically connect the solar cells in series;

Wherein the plurality of rectangular silicon solar cells comprises at least one rectangular solar cell having two chamfered edges corresponding to the edges or portions of the edges of the pseudo-square wafer, wherein the one or more rectangular solar cells Silicon solar cells each lack chamfered edges;

Wherein the spacing between parallel lines in which the pseudo-square wafers are diced is selected such that a width orthogonal to a long axis of the rectangular silicon solar cells including chamfered edges is greater than a width of the rectangular silicon &lt; RTI ID = 0.0 &gt; Making larger than the width orthogonal to the long axis of the solar cells to compensate for the chamfered edges so that each of the plurality of rectangular silicon solar cells in the string of solar cells is exposed to light in the operation of the string of solar cells And is selected to have a front surface with substantially the same area.

23. The string of solar cells,

A plurality of silicon solar cells arranged in a line with the ends of adjacent solar cells superimposed to electrically connect the solar cells in series and conductively coupled to each other;

Wherein at least one of the silicon solar cells has chamfered edges corresponding to corners or edges of pseudo-square silicon wafers diced therefrom, wherein at least one of the silicon solar cells lack chamfered edges, Each of the silicon solar cells has a front surface of substantially the same area exposed to light during operation of the string of solar cells.

24. A method of making two or more strings of solar cells,

A first plurality of rectangular silicon solar cells comprising chamfered edges corresponding to edges or portions of corners of the pseudo-square silicon wafers and each first length having a total width of the pseudo-square silicon wafers Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to the long edge of each wafer to form a second plurality of rectangular silicon solar cells over which the chamfered edges are deficient;

From each of said first plurality of rectangular silicon solar cells to form a third plurality of rectangular silicon solar cells, each second length shorter than said first length and lacking chamfered edges, said chamfered edges ;

A long side of adjacent rectangular silicon solar cells overlapped and electrically connected to each other to electrically connect the second plurality of rectangular silicon solar cells in series to form a solar cell string having the same width as the first length, Arranging the second plurality of rectangular silicon solar cells in line with the second plurality of rectangular silicon solar cells; And

A plurality of rectangular silicon solar cells stacked adjacent to each other and electrically connected to each other to electrically connect the third plurality of rectangular silicon solar cells to form a solar cell string having the same width as the second length, And arranging the third plurality of rectangular silicon solar cells in line with the second plurality of rectangular silicon solar cells.

25. A method of making two or more strings of solar cells,

A first plurality of rectangular silicon solar cells comprising chamfered edges corresponding to edges or portions of corners of pseudo-square silicon wafers and a second plurality of rectangular silicon solar cells lacking chamfered edges, Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a plurality of silicon wafers;

A first plurality of rectangular silicon solar cells arranged in series with long sides of adjacent rectangular silicon solar cells overlapping and electrically coupled to each other to electrically connect the first plurality of rectangular silicon solar cells in series; ; And

And arranging the second plurality of rectangular silicon solar cells in series with long sides of adjacent rectangular silicon solar cells superimposed and electrically coupled to each other to electrically connect the second plurality of rectangular silicon solar cells in series .

26. A method of making a solar module,

A plurality of rectangular silicon solar cells comprising chamfered edges corresponding to the edges of the pseudo-square silicon wafers from a plurality of pseudo-square silicon wafers and a plurality of rectangular silicon solar cells lacking chamfered edges Dicing each of the plurality of pseudo-square silicon wafers along a plurality of lines parallel to the long edge of the wafer to form cells;

Each of which includes only rectangular silicon solar cells deficient in chamfered edges arranged in series with long sides of the silicon solar cells superimposed and electrically coupled to each other to electrically connect the silicon solar cells in series, Arranging at least a portion of the rectangular silicon solar cells deficient in chamfered edges to form a plurality of supersells;

Each of which includes only rectangular silicon solar cells including chamfered edges arranged in series with long sides of the silicon solar cells superimposed and electrically coupled to each other to electrically connect the silicon solar cells in series, 2. Arranging at least a portion of the rectangular silicon solar cells comprising chamfered edges to form a plurality of supersells; And

And arranging the supercells in parallel rows of supercells of substantially the same length to form a front surface of the solar module.

27. The photovoltaic module of claim 26 wherein two of the rows of supersells adjacent to the parallel opposing edges of the solar module include only supersells from the second plurality of supersells, All other columns of the first super-cells include only super-cells from the first plurality of super-cells.

28. The photovoltaic module of Item 27, wherein the solar module comprises a total of six columns of super cells.

29. The super-

A plurality of silicon solar cells arranged in a line in a first direction with ends of adjacent silicon solar cells superposed and electrically connected to each other to electrically connect the silicon solar cells in series; And

Wherein the silicon solar cell has a long axis oriented parallel to a second direction orthogonal to the first direction and is electrically conductive to the front or rear surface of the end of the silicon solar cells at three or more distinct locations arranged along the second direction And having a conductor thickness of less than or equal to about 100 microns measured orthogonally to the front or back surface of the end silicon solar cell and having a thickness of at least about 0.012 ohms And a differential expansion between the end silicon solar cell and the interconnect in the second direction for a temperature range of about -40 &lt; 0 &gt; C to about 85 &lt; 0 & Flexible electrical interconnect that is configured to provide flexibility to accommodate.

30. The cell of claim 29, wherein the dielectric electrical interconnect has a conductor thickness less than or equal to about 30 microns measured orthogonally to the front and back surfaces of the end silicon solar cell.

31. The supercell of item 29, wherein the flexible electrical interconnect extends through the supercell so as to provide electrical interconnection to at least a second supercell located parallel and adjacent to the supercell within the solar module, .

32. The supercell of item 29, wherein the flexible electrical interconnect comprises:

And extend in the first direction through the supercell to provide electrical interconnection to at least a second supercell located in a line parallel to the supercell within the solar module.

33. The solar module,

And a plurality of supersells arranged in two or more parallel rows over a width of the module to form a front surface of the module, wherein each super cell overlaps to electrically connect the silicon solar cells in series, And a plurality of silicon solar cells arranged in series with the ends of the adjoining silicon solar cells to be combined;

At least the end of the first supercell adjacent to the edge of the module in the first row is bonded to the front surface of the first supercell at a plurality of discrete locations with an electrically conductive adhesive bond material, Adjacent to the same edge of the module in a second row via a flexible electrical interconnect that is at least partially folded around the end of the first supercell and concealed in the field of view from the front of the module, And is electrically connected to the end of the cell.

34. The photovoltaic module of claim 33, wherein the surfaces of the flexible electrical interconnect on the face of the module are covered or colored to reduce visual contrast with the super cells.

35. The photovoltaic module of Item 33, wherein two or more parallel rows of the supercelles are arranged on a white back sheet to form a front surface of the solar module illuminated by solar radiation during operation of the solar module Wherein the white back sheet comprises darkened stripes having positions and widths corresponding to the widths and positions of gaps between parallel rows of the supercells and wherein the white portions of the back sheets have a gap They are not seen through.

36. A method of making a string of solar cells,

Laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on the silicon solar cells;

Applying the one or more scribed silicon solar cells to an electrically conductive adhesive bond material at one or more locations adjacent to long sides of each rectangular area;

Separating the silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells comprising a portion of the electrically conductive adhesive bond material disposed on a front side thereof adjacent each long side;

Arranging the plurality of rectangular silicon solar cells in series with long sides of adjoining rectangular silicon solar cells overlapping in a shingled manner with a portion of the electrically conductive adhesive bonding material disposed therebetween ; And

Curing the electrically conductive binding material to couple adjacent and overlapping rectangular silicon solar cells to each other and connecting them electrically in series.

37. A method of making a string of solar cells,

Laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on the silicon solar cells, each solar cell having a top surface and a facing surface And a bottom surface positioned inwardly;

Applying an electrically conductive adhesive bond material to portions of the top surfaces of the one or more silicon solar cells;

Vacuum is applied between the bottom surfaces of the one or more silicon solar cells and the support surface of the curves to bend the one or more silicon solar cells against the support surface of the curve, Cutting the one or more silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells having a portion of the electrically conductive adhesive bond material,

Arranging the plurality of rectangular silicon solar cells in series with long sides of adjoining rectangular silicon solar cells overlapping in a shingled manner with a portion of the electrically conductive adhesive bonding material disposed therebetween ;

Curing the electrically conductive binding material to bond adjacent and overlapping rectangular silicon solar cells together and connecting them electrically in series.

38. The method of claim 37, wherein the electrically conductive adhesive bond material is applied to the one or more silicon solar cells, and thereafter one or more scribe And laser scribing the lines.

9. The method of claim 37, wherein laser scribing the one or more scribe lines on each of the one or more silicon solar cells, and then scribing the electrically conductive adhesive bond material to the one or more silicon solar cells. Lt; RTI ID = 0.0 &gt; solar cells. &Lt; / RTI &gt;

40. The solar module,

And a plurality of supercells arranged in two or more parallel rows to form a front surface of the solar module, wherein each supercell includes a plurality of superselected cells, each of which is superimposed to electrically connect the silicon solar cells electrically in series, And a plurality of silicon solar cells arranged in line with the ends of the silicon solar cells, wherein each supercell includes a front end contact at one end of the supercell and a rear end of the opposite polarity at the opposite end of the supercell A contact;

Wherein the first row of supercells comprises a first super cell arranged with its front end contact adjacent and parallel to a first edge of the solar module, Wherein the first edge of the solar module is parallel to the first edge and is conductively coupled to the front end contact of the first super cell and occupies only a narrow portion of the front surface of the solar module adjacent to the first edge of the solar module, And a first flexible electrical interconnect that is not greater than about one centimeter as measured orthogonally to the first edge of the optical module.

41. The photovoltaic module of claim 40, wherein a portion of the first flexible electrical interconnect extends around an end of the first supercell nearest the first edge of the photovoltaic module and back of the first supercell.

42. The photovoltaic module of claim 40 wherein the first flexible interconnect has a thin ribbon portion that is conductively coupled to the front end contact of the first supercell and a thick portion that runs parallel to the first edge of the photovoltaic module .

43. The photovoltaic module of claim 40 wherein the first flexible interconnect comprises a thin ribbon portion that is conductively coupled to the front end contact of the first supercell and a coiled portion extending parallel to the first edge of the photovoltaic module colied ribbon portion.

44. The photovoltaic module of clause 40, wherein the second row of supercells comprises a second super cell arranged with its front end contact adjacent and parallel to the first edge of the solar module, The front end contact of the supercell is electrically connected to the front end contact of the second supercell through the first flexible electrical interconnect.

45. The photovoltaic module of clause 40, wherein the rear end contact of the first supercell is located adjacent and parallel to the second edge of the solar module facing from the first edge of the solar module, A second flexible electrical interconnect running parallel to the second edge of the solar module and being conductively coupled to the back end contact of the first super cell and generally lying behind the super cells.

46. In the solar module of Item 45,

The second row of supercells having a front end contact adjacent and parallel to the first edge of the photovoltaic module and a rear end contact adjacent and parallel to the second edge of the photovoltaic module, 2 super cells;

The front end contact of the first supercell is electrically connected to the front end contact of the second supercell through the first flexible electrical interconnect;

The rear end contact of the first supercell is electrically connected to the rear end contact of the second supercell through the second flexible electrical interconnect.

47. In the solar module of Item 40,

The first edge of the solar cell module being arranged in a first column of the supercells in series with the first supercell and having its rear end contact adjacent the second edge of the solar module facing the first edge of the solar cell module, Super cell; And

And a second flexible electrical interconnect extending parallel to the second edge of the photovoltaic module and being conductively coupled to the back end contact of the first supercell and lying entirely behind the supercell.

48. In the photovoltaic module of Item 47,

The second row of supercells includes a third supercell and a fourth supercell arranged in series, the front end contact of the third supercell is adjacent to a first edge of the solar module, The rear end contact of the cell is adjacent to the second edge of the photovoltaic module;

The front end contact of the first supercell is electrically connected to the front end contact of the third supercell through the first flexible electrical interconnect and the rear end contact of the second supercell is electrically connected to the second flexible electrical interconnect And is electrically connected to the rear end contact of the fourth super cell.

49. The photovoltaic module of clause 40 wherein said supercells comprise a white back sheet comprising darkened stripes having positions and widths corresponding to positions and widths of gaps between parallel rows of said supercells, And the white portions of the backsheets are not visible through the gaps between the columns.

50. The solar module of claim 40, wherein all portions of the first flexible electrical interconnect located on the front surface of the solar module are covered or colored to reduce the visible contrast with the super cells.

51. In the solar module of Item 40,

Each silicon solar cell,

Wherein the front and rear surfaces have a rectangular or substantially rectangular shape having shapes defined by first and second opposedly positioned parallel long sides and two opposedly positioned short sides, Are exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization comprising a plurality of fingers disposed on the front surface and extending orthogonally to the long sides and a plurality of discrete front contact pads located in a row adjacent the first long side, Pattern, wherein each front contact pad is electrically coupled to at least one of the fingers;

An electrically conductive backplane metallization pattern disposed on the backside and comprising a plurality of discrete back contact pads located in a row adjacent the second long side;

Within each supercell, the silicon solar cells are arranged so as to electrically connect the silicon solar cells in series, with the first and second long sides of adjacent silicon solar cells corresponding to the separate front contact pads, And are arranged in a line with separate rear contact pads on adjacent silicon solar cells that overlap and are electrically coupled to each other with a conductive adhesive bonding material.

52. The solar module of Clause 51, wherein the front metallization pattern of the silicon solar cell comprises a plurality of thin conductors electrically interconnecting adjacent separate front contact pads, And is thinner than the width of the separate contact pads measured orthogonally to the long sides.

53. The photovoltaic module of clause 51 wherein said conductive adhesive bond material is deposited on said separate front contact pads by features of said front metallization pattern forming one or more barriers adjacent said separate front contact pads, Lt; / RTI &gt;

54. The photovoltaic module of Clause 51, wherein the conductive adhesive bonding material is formed by the rear metallization pattern features forming one or more barriers adjacent to the separate rear contact pads, . &Lt; / RTI &gt;

55. A method of making a solar module, the method comprising:

Assembling a plurality of supergels, wherein each supercell includes a plurality of rectangular silicon solar cells arranged in a line in a row on the long sides of adjacent rectangular silicon solar cells overlapping in a shingled manner ;

Curing the electrically conductive bonding material disposed between the overlapping ends of the adjacent rectangular silicon solar cells by applying heat and pressure to the super cells to form adjacent and overlapping rectangular silicon solar cells with each other And connecting them electrically in series;

Arranging and interconnecting the supercells in a desired photovoltaic module configuration with a stack of layers comprising an encapsulant;

And applying heat and pressure to the stack of layers to form a laminated structure.

56. The method of claim 55, wherein heat and pressure are applied to the supercells prior to applying heat and pressure to the stack of layers to form the laminated structure to cure the electrically conductive bonding material, To form supercells that are cured or partially cured as an evacuation product prior to forming the laminated structure.

57. The method of clause 56 wherein each additional rectangular silicon solar cell is added to the supercell during assembly of the supercell so that the electrically conductive adhesive bonding between the newly added solar cell and its adjacent and overlapping solar cell The material is cured or partially cured before another rectangular silicon solar cell is added to the supercell.

58. The method of item 56, comprising the step of curing or partially curing all said electrically electrically conductive binding substances in the supercell in the same step.

59. In the method of item 56,

Heat and pressure are applied to the supercells prior to applying heat and pressure to the stack of layers to form a laminated structure to partially cure the electrically conductive bonding material to form the laminated structure Forming partially cured supercells as an intermediate product; And

And completing the curing of the electrically conductive bonding material while applying heat and pressure to the stack of layers to form the laminated structure.

60. The method of item 55, wherein heat and pressure are applied to the stack of layers to form the laminated structure without forming super cells that are cured or partially cured as an intermediate product prior to forming the laminated structure And curing the electrically conductive binding material.

61. The method of claim 55, comprising dicing one or more silicon solar cells into rectangular shapes to provide said rectangular silicon solar cells.

62. The method of claim 61, wherein said electrically conductive adhesive bonding material is applied to said silicon solar cells prior to dicing said one or more silicon solar cells to provide rectangular silicon solar cells having previously applied electrically conductive adhesive bonding materials. To one or more silicon solar cells.

63. The method of claim 62, wherein the electrically conductive adhesive bond material is applied to the one or more silicon solar cells, and thereafter one or more silicon solar cells on each of the one or more silicon solar cells And subsequently cutting the one or more silicon solar cells along the scribe lines.

64. The method of claim 62, wherein a laser is used to scribe one or more lines on each of the one or more silicon solar cells, and then the electrically conductive adhesive bond material is applied to the one or more Silicon solar cells, followed by cutting the one or more silicon solar cells along the scribe lines.

65. The method of claim 62, wherein the electrically-conductive adhesive bond material is applied to the top surface of each of the one or more silicon solar cells, and the bottom surface of each of the one or more silicon solar cells Apply a vacuum between the bottom surfaces of the one or more silicon solar cells and the support surface of the curve so as to bend the one or more silicon solar cells against the support surface of the curve, And cutting the one or more silicon solar cells accordingly.

66. The method of claim 61, further comprising dicing the one or more silicon solar cells to provide the rectangular silicon solar cells, and then applying the electrically conductive adhesive bonding material to the rectangular silicon solar cells .

67. The method of claim 55, wherein the conductive adhesive bonding material has a glass transition temperature of less than or equal to about 0 &lt; 0 &gt; C.

1A. The solar module,

And a plurality of supercells arranged in two or more parallel rows to form a front surface of the solar module, wherein each supercell comprises a plurality of supercells, superimposed to electrically connect serially the silicon solar cells, A plurality of silicon solar cells arranged in line with the ends of the silicon solar cells, wherein each supercell includes a front end contact at one end of the supercell and a rear end of the opposite polarity at an opposite end of the supercell, A contact;

The first row of supercells having a first supercell arranged with a front end contact adjacent and parallel to a first edge of the photovoltaic module,

Extending parallel to the first edge of the solar module and being conductively coupled to the front end contact of the first super cell and having a narrow front side of the front side of the solar module adjacent to the first edge of the solar module And is not wider than about one centimeter as measured orthogonally to the first edge of the photovoltaic module.

2A. In the 1A photovoltaic module, a portion of the first flexible electrical interconnect extends around the end of the first supercell nearest to the first edge of the photovoltaic module and behind the first supercell.

3A. The first flexible interconnect includes a thin ribbon portion that is conductively coupled to the front end contact of the first supercell and a thicker portion that runs parallel to the first edge of the photovoltaic module, do.

4A. In the solar module of Item 1A, the first flexible interconnect has a thin ribbon portion that is conductively coupled to the front end contact of the first supercell and a coiled ribbon portion that runs parallel to the first edge of the photovoltaic module .

5A. The solar cell module of claim 1, wherein the second row of supercells comprises a second supercell arranged with its front end contact adjacent and parallel to the first edge of the solar module, Is electrically connected to the front end contact of the second supercell through the first flexible electrical interconnect.

6A. In the solar module of Item 1A, the rear end contact of the first supercell is located adjacent and parallel to the second edge of the solar module facing the first edge of the solar module, A second flexible electrical interconnect extending parallel to and extending parallel to the second edge and being conductively coupled to the back end contact of the first super cell and generally resting behind the super cells.

7A. In the 6A solar module,

The second row of supercells having a front end contact adjacent and parallel to the first edge of the photovoltaic module and a rear end contact adjacent and parallel to the second edge of the photovoltaic module, 2 super cells;

The front end contact of the first supercell is electrically connected to the front end contact of the second supercell through the first flexible electrical interconnect;

The rear end contact of the first supercell is electrically connected to the rear end contact of the second supercell through the second flexible electrical interconnect.

8A. In the 1A photovoltaic module,

A second supercell having a rear end contact arranged in a first row of supersells in series with the first supersell and adjacent to a second edge of the solar module facing a first edge of the photovoltaic module; And

A second flexible electrical interconnect extending parallel to and extending parallel to a second edge of the photovoltaic module and being conductively coupled to the back end contact of the first super cell and generally resting behind the super cells.

9A. In the solar module 8A,

The second row of supercells has a front end contact of the third supercell adjacent to the first edge of the solar module and a rear end contact of the fourth supercell adjacent to the second edge of the solar module, And the fourth super cell and the fourth super cell arranged in the second direction;

The front end contact of the first supercell is electrically connected to the front end contact of the third supercell through the first flexible electrical interconnect and the rear end contact of the second supercell is electrically connected to the second flexible electrical interconnect And is electrically connected to the rear end contact of the fourth super cell.

10A. In the 1A photovoltaic module, there are no electrical interconnections between the supercells that reduce the active areas of the front face of the module away from the outer edges of the photovoltaic module.

11A. In a solar module of Item 1A, at least one pair of supersells has one rear end contact of the pair of supersells adjacent to the other one of the pair of supersells, do.

12A. In the 1A photovoltaic module,

At least one pair of supercells is arranged in a row in the column with adjacent ends of the two supercells having opposite polarity end contacts;

Adjacent ends of the pair of super cells overlap;

The supercells in the pair of supercells are electrically connected in series by flexible electrical interconnects interposed between their overlapping ends and not shielding the front surface.

13A. In a solar module of Item 1A, the supercells are arranged on a white back sheet with parallel darkened stripes having positions and widths corresponding to positions and widths of gaps between parallel rows of the supercells And the white portions of the backsheets are not visible through the gaps between the rows.

14A. In the solar module of Item 1A, all portions of the first flexible electrical interconnect located on the front surface of the solar module are covered or colored to reduce visible contrast with the super cells.

15A. In the 1A photovoltaic module,

Each silicon solar cell,

Wherein the front and rear surfaces have a rectangular or substantially rectangular shape having shapes defined by first and second oppositely located parallel long sides and two opposedly positioned short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern having a plurality of fingers disposed on the front surface and extending orthogonally to the long sides and a plurality of discrete front contact pads located in a row adjacent to the first long side, Wherein each front contact pad is electrically coupled to at least one of the fingers;

And an electrically conductive rear metallization pattern disposed on the back surface and having a plurality of discrete back contact pads located in a row adjacent the second long side;

Within each supercell, the silicon solar cells are aligned and overlapped with the first and second long sides of overlapping adjacent silicon solar cells, and electrically connected to the silicon solar cells in series by a conductive adhesive bonding material Are arranged in line with corresponding separate front contact pads and separate rear contact pads on adjacent silicon solar cells that are electrically coupled to each other.

16A. In the solar module of matter 15A, said front metallization pattern of each silicon solar cell comprises a plurality of thin conductors electrically interconnecting adjacent separate front contact pads, each thin conductor having a length Is smaller than the width of the separate contact pads measured orthogonally to the sides.

17A. In the photovoltaic module of Item 15A, the conductive adhesive bonding material is substantially limited to the locations of the separate front contact pads by the features of the front metallization pattern forming the barriers around each separate front contact pad do.

18A. In the photovoltaic module of Item 15A, the conductive adhesive bonding material is substantially limited to locations of the separate rear contact pads by features of the rear metallization pattern that form the barriers around each separate rear contact pad do.

19A. In the solar module of Item 15A, the separate rear contact pads are separate silver back contact pads, and the back metallization pattern of each silicon solar cell, except for the separate silver back contact pads, Does not include the silver contacts at any location that lies below a portion of the front surface of the solar cell that is not overlapped by the solar cell.

20A. The solar module,

Wherein each of the supercells includes a plurality of silicon solar cells arranged in a line with the ends of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells in series and electrically connected to each other, ;

Each silicon solar cell,

Wherein the front and rear surfaces have a rectangular or substantially rectangular shape having shapes defined by first and second oppositely disposed parallel long sides and two oppositely positioned short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern having a plurality of fingers disposed on the front surface and extending orthogonally to the long sides and a plurality of discrete front contact pads located in a row adjacent the first long side, / RTI &gt;

Each front contact pad electrically coupled to at least one of the fingers;

An electrically conductive rear metallization pattern disposed on the back surface and having a plurality of discrete back contact pads located in a row adjacent the second long side;

The silicon solar cells in each supercell are aligned and overlapped with the first and second long sides of the adjacent silicon solar cells and are electrically connected to each other with a conductive adhesive bonding material so as to electrically connect the silicon solar cells in series. Arranged in series with corresponding separate front contact pads and separate rear contact pads on adjacent silicon solar cells coupled to each other;

Wherein the supercells comprise a single row or two or more parallel columns substantially transverse to the length or width of the solar module to form a front surface of the solar module illuminated by solar radiation during operation of the solar module .

21A. In the solar module 20A, the separate back contact pads are separate silver back contact pads, and the back metallization pattern of each silicon solar cell, except for the separate silver back contact pads, And does not include a silver contact at any location that lies below a portion of the front surface of the solar cell that is not overlapped by the solar cell.

22A. In the photovoltaic module of Item 20A, said front metallization pattern of each silicon solar cell comprises a plurality of thin conductors electrically interconnecting adjacent separate front contact pads, each thin conductor having a length Is smaller than the width of the separate contact pads measured orthogonally to the sides.

23A. In the photovoltaic module of Item 20A, the conductive adhesive bonding material is substantially limited to the locations of the separate front contact pads by the features of the front metallization pattern forming the barriers around each separate front contact pad do.

24A. In the photovoltaic module of Item 20A, the conductive adhesive bonding material is substantially limited to the locations of the separate rear contact pads by the features of the rear metallization pattern that form the barriers around each separate rear contact pad do.

25A. The super-

A plurality of silicon solar cells, each silicon solar cell comprising:

Wherein the front and rear surfaces have a rectangular or substantially rectangular shape having shapes defined by first and second oppositely disposed parallel long sides and two opposedly positioned short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern having a plurality of fingers disposed on the front surface and extending orthogonally to the long sides and a plurality of discrete front contact pads located in a row adjacent the first long side, Wherein each front contact pad is electrically coupled to at least one of the fingers;

And an electrically conductive rear metallization pattern disposed on the backside and having a plurality of distinct silver backside contact pads located in a row adjacent the second long side;

The silicon solar cells are stacked and overlapped with first and second long sides of adjacent silicon solar cells and electrically connected in series to electrically connect the silicon solar cells in series, Are arranged in line with the separate front contact pads on the silicon solar cells and the separate rear contact pads.

26A. In the solar module of Item 25A, the separate back contact pads are separate silver back contact pads, and the back metallization pattern of each silicon solar cell, except for the separate silver back contact pads, And does not include a silver contact at any location that lies below a portion of the front surface of the solar cell that is not overlapped by the solar cell.

27A. In the string of solar cells of matter 25A, the front metallization pattern comprises a plurality of thin conductors electrically interconnecting adjacent separate front contact pads, each thin conductor being connected to the long sides of the solar cells Lt; RTI ID = 0.0 &gt; contact pads. &Lt; / RTI &gt;

28A. In the string of solar cells of matter 25A, the conductive adhesive bonding material is substantially limited to the locations of the separate front contact pads by the features of the front metallization pattern forming the barriers around each separate front contact pad do.

29A. In the string of solar cells of matter 25A, the conductive adhesive bonding material is substantially limited to the locations of the separate rear contact pads by the features of the rear metallization pattern forming the barriers around each separate rear contact pad do.

30A. In the string of solar cells of matter 25A, the conductive adhesive bonding material has a glass transition of less than or equal to about 0 &lt; 0 &gt; C.

31A. A method of making a solar module, the method comprising:

Assembling a plurality of supercells, each supercell comprising a plurality of rectangular silicon solar cells arranged in series with ends on long sides of adjacent rectangular silicon solar cells overlapping in a shingled manner, ;

Applying heat and pressure to the supercells to cure an electrically conductive bonding material disposed between the overlapping ends of the adjacent rectangular silicon solar cells to form adjacent and overlapping rectangular silicon solar cells And connecting them electrically in series;

Arranging and interconnecting said supercells within a desired photovoltaic module configuration with a stack of layers comprising an encapsulant;

And applying heat and pressure to the stack of layers to form a laminated structure.

32A. 31A, heat and pressure are applied to the supercells prior to applying heat and pressure to the stack of layers to form the laminated structure to cure or partially cure the electrically conductive bonding material Curing to form super cells that are cured or partially cured as an intermediate product prior to forming the laminated structure.

33A. In the method of Item 32A, each additional rectangular silicon solar cell is added to the supercell during assembly of the supercell so that the electrically conductive adhesive bonding between the newly added solar cell and its adjacent and overlapping solar cells The material is cured or partially cured before another rectangular silicon solar cell is added to the supercell.

34A. The method of Item 32A includes curing or partially curing all of the electrically conductive binders in the supercell at the same step.

35A. In method 32A,

Applying heat and pressure to the supercells prior to applying heat and pressure to the stack of layers to form a laminated structure to partially cure the electrically conductive bonding material to form the laminated structure Forming partially cured supercells as an intermediate product prior to forming the partially cured super cells; And

And fully curing the electrically conductive bonding material while applying heat and pressure to the stack of layers to form the laminated structure.

36A. 31. A method according to claim 31A, wherein heat and pressure are applied to said stack of layers to form said laminated structure without forming super-cured partially cells as an intermediate before forming said laminated structure, And curing the adult binding material.

37A. 31A, the method includes dicing one or more silicon solar cells into rectangular shapes to provide the rectangular silicon solar cells.

38A. The method of Item 37A, wherein the electrically conductive adhesive bond material is applied to the one or more silicon solar cells prior to dicing the one or more silicon solar cells to provide rectangular silicon solar cells having previously applied electrically conductive adhesive bond materials. Lt; RTI ID = 0.0 &gt; solar cells. &Lt; / RTI &gt;

39A. 38. The method of claim 38A, wherein the electrically conductive adhesive bond material is applied to the one or more silicon solar cells and then one or more lines are scribed on each of the one or more silicon solar cells. And then cutting the one or more silicon solar cells along the scribe lines.

40A. 38. The method of claim 38A, wherein a laser is used to scribe one or more lines on the one or more silicon solar cells, and then the electrically conductive adhesive bond material is applied to the one or more silicon solar cells And thereafter cutting the one or more silicon solar cells along the scribe lines.

41A. The method of claim 38A, wherein the electrically conductive adhesive bond material is applied to the top surface of each of the one or more silicon solar cells and is applied to the oppositely positioned bottom surface of each of the one or more silicon solar cells And applying a vacuum between the bottom surfaces of the one or more silicon solar cells and the support surface of the curve so as to bend the one or more silicon solar cells against the support surface of the curve, And cutting one or more silicon solar cells.

42A. 37A, comprising the step of applying the electrically conductive adhesive bonding material to the rectangular silicon solar cells after dicing the one or more silicon solar cells to provide the rectangular silicon solar cells do.

43A. 31A, the conductive adhesive bonding material has a glass transition temperature of less than or equal to about 0 &lt; 0 &gt; C.

44A. A method of making a supercell, the method comprising:

Laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on silicon solar cells, wherein the long sides of each rectangular region Applying an electrically conductive adhesive bond material to the one or more scribed silicon solar cells at one or more locations adjacent to the scribed silicon solar cell;

And separating the silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells comprising a portion of the electrically conductive adhesive bond material disposed on a front side thereof adjacent each long side and;

Arranging the plurality of rectangular silicon solar cells in series with long sides of adjoining rectangular silicon solar cells overlapping in a shingled manner with a portion of the electrically conductive adhesive bonding material disposed therebetween ;

Curing the electrically conductive bonding material to bond the adjacent and overlapping rectangular silicon solar cells with each other, and connecting them electrically in series.

45A. A method of making a supercell, the method comprising:

Laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on silicon solar cells, each solar cell having a top surface and a facing surface And a bottom surface positioned inwardly;

Applying an electrically conductive adhesive bond material to portions of the top surfaces of the one or more silicon solar cells;

Applying a vacuum between the bottoms of the one or more silicon solar cells and the support surface of the curve to bend the one or more silicon solar cells against the support surface of the curve, Cutting the one or more silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells comprising a portion of the electrically conductive adhesive bond material disposed on the front surface;

Arranging the plurality of rectangular silicon solar cells in series on long sides of adjoining rectangular silicon solar cells overlapping in a shingled manner with a portion of the electrically conductive adhesive bonding material disposed therebetween ;

Curing the electrically conductive binding material to bond adjacent and overlapping rectangular silicon solar cells together and connecting them electrically in series.

46A. A method of making a supercell, the method comprising:

Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a plurality of rectangular silicon solar cells each having substantially the same length along its long axis; And

Arranging the rectangular silicon solar cells in series with long sides of adjacent solar cells superposed and electrically coupled to each other to electrically connect the solar cells in series;

Wherein the plurality of rectangular silicon solar cells comprises at least one rectangular solar cell having two chamfered edges corresponding to edges or portions of the edges of the pseudo square wafer and one or more chamfered edges, Further comprising rectangular silicon solar cells;

Wherein the spacing between parallel lines in which the pseudo-square wafers are diced is a width that is orthogonal to the true axis of the rectangular silicon solar cells having the chamfered edges, the rectangular silicon solar cell lacking the chamfered edges Selected such that each of said plurality of rectangular silicon solar cells in the string of solar cells has a substantially equal area of front surface exposed to light during operation of the strings of solar cells, do.

47A. The super-

And a plurality of silicon solar cells arranged in a line with adjacent portions of the solar cells overlapping each other to electrically connect the solar cells electrically in series and electrically connected to each other;

At least one of the silicon solar cells has chamfered edges corresponding to edges or corners of a pseudo-square silicon wafer to which it is diced, at least one of the silicon solar cells lacking chamfered edges , Each of the silicon solar cells having a front surface of substantially the same area exposed to light during operation of the string of solar cells.

48A. A method of making two or more super cells, the method comprising:

A first plurality of rectangular silicon solar cells having chamfered edges corresponding to the corners or edges of the pseudo-square silicon wafers and a second length over the entire length of each of the pseudo square silicon wafers Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a second plurality of rectangular silicon solar cells having and chamfered edges deficient;

From each of said first plurality of rectangular silicon solar cells to form a third plurality of rectangular silicon solar cells each having a second length less than said second length and lacking chamfered edges, said chamfered edges ;

A long side of adjacent rectangular silicon solar cells overlapped and electrically connected to each other to electrically connect the second plurality of rectangular silicon solar cells to form a solar cell string having the same width as the first length, Arranging the second plurality of rectangular silicon solar cells in line with the second plurality of rectangular silicon solar cells; And

A long side of adjacent rectangular silicon solar cells overlapped and electrically connected to each other to electrically connect the third plurality of rectangular silicon solar cells to form a solar cell string having the same width as the second length, And arranging the third plurality of rectangular silicon solar cells in line with the second plurality of rectangular silicon solar cells.

49A. A method of making two or more super cells, the method comprising:

A first plurality of rectangular silicon solar cells having chamfered edges corresponding to edges or portions of edges of pseudo-square silicon wafers and a second plurality of rectangular silicon solar cells lacking chamfered edges, Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a plurality of silicon wafers;

A first plurality of rectangular silicon solar cells arranged in series with long sides of adjacent rectangular silicon solar cells overlapping and electrically coupled to each other to electrically connect the first plurality of rectangular silicon solar cells in series; ; And

And arranging the second plurality of rectangular silicon solar cells in series with long sides of adjacent rectangular silicon solar cells superimposed and electrically coupled to each other to electrically connect the second plurality of rectangular silicon solar cells in series .

50A. The solar module,

Connected strings of N &gt; = 25 rectangular or substantially rectangular solar cells having an average breakdown voltage greater than about 10 volts, said solar cells being stacked and electrically coupled to each other with an electrically and thermally conductive adhesive Grouped into one or more super cells each having two or more of said solar cells arranged in series with long sides of adjacent solar cells;

 A single solar cell or group of &lt; N solar cells in the string of solar cells is not individually electrically connected in parallel with the bypass diode.

51A. In the 50A solar module, N is an integer greater than or equal to 30.

52A. In the 50A solar module, N is an integer equal to or greater than 50.

53A. In the solar module of matter 50A, N is an integer greater than or equal to 100.

54A. In a solar module of matter 50A, the adhesive has a thickness orthogonal to the solar cells of less than or equal to about 0.1 mm and a thermal conductivity perpendicular to the solar cells of greater than or equal to about 1.5 w / m / k Thereby forming a bond between adjacent solar cells.

55A. In the solar module of matter 50A, the N solar cells are grouped into a single supercell.

56A. In the 50A solar module, the solar cells are silicon solar cells.

57A. The solar module,

And a super cell substantially over the entire length or width of the solar module parallel to the edge of the solar module, the super cell comprising an adjacent solar cell A series connected string of N rectangular or substantially rectangular solar cells having an average breakdown voltage greater than about 10 volts arranged in series with the long sides of the cells;

A single solar cell or group of &lt; N solar cells in the supercell is not individually electrically connected in parallel with the bypass diode.

58A. In the 57A solar module, N> 24.

59A. In the solar module of Item 57A, the supercell has a length in the direction of a current flow of at least about 500 mm.

60A. The super-

A plurality of silicon solar cells, each silicon solar cell comprising:

Wherein the front and rear surfaces have rectangular or substantially rectangular shapes having shapes defined by first and second oppositely located parallel long sides and two opposedly positioned short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern disposed on the front surface and having at least one front contact pad positioned adjacent the first long side;

An electrically conductive rear metallization pattern disposed on the back surface and having at least one rear contact pad positioned adjacent the second long side;

Wherein the silicon solar cells are stacked and have first and second long sides of adjacent silicon solar cells, and adjacent silicon solar cells overlapping to electrically connect the silicon solar cells in series and conductively coupled to each other with a conductive adhesive bonding material, Are arranged in line with front and rear contact pads on the substrate;

The front metallization pattern of each silicon solar cell has a barrier that substantially limits the conductive adhesive bonding material to the at least one front contact pads prior to curing the conductive adhesive bonding material during fabrication of the supercell .

61A. In the supercell of Item 60A, for each pair of adjacent and overlapping silicon solar cells, as the barrier on one surface of the silicon solar cells overlaps and is hidden with a portion of the other silicon solar cell, Substantially confines the conductive adhesive bonding material to overlapping areas of the front surface of the silicon solar cell prior to curing the conductive adhesive bonding material during manufacture of the conductive adhesive bonding material.

62A. In a supercell of matter 60A, the barrier comprises a continuous conductive line parallel to or progressing with a substantially full length of the first long side, the at least one front contact pads being connected to the continuous conductive line And is located between the first long side of the cell.

63A. In the supercell of Item 62A, the front metallization pattern includes fingers electrically connected to the at least one front contact pads and proceeding perpendicularly to the first long side, To electrically connect the fingers to provide multiple conductive passages from the at least one front contact pad to the at least one front contact pad.

64A. In the supercell of matter 60A, the front metallization pattern comprises a plurality of discrete contact pads arranged in parallel rows adjacent and adjacent to the first long side, the barrier being formed by the conductive adhesive bonding material To form separate barriers for each separate contact pad so as to substantially confine the conductive adhesive bond material to separate contact pads prior to curing the conductive adhesive bond material.

65A. In the supercell of matter 64A, the isolated barriers are adjacent to their corresponding separate contact pads, and are larger.

66A. The super-

A plurality of silicon solar cells, each silicon solar cell comprising:

Wherein the front and rear surfaces have rectangular or substantially rectangular shapes having shapes defined by first and second oppositely located parallel long sides and two opposedly positioned short sides, Exposed to solar radiation during operation of the string of solar cells;

An electrically conductive front metallization pattern disposed on the front surface and having at least one front contact pad positioned adjacent the first long side;

An electrically conductive rear metallization pattern disposed on the back surface and having at least one rear contact pad positioned adjacent the second long side;

The silicon solar cells are stacked on the first and second sides of the overlapping and adjacent silicon solar cells, and the front and back contacts on adjacent silicon solar cells overlapping and electrically coupled to each other to electrically connect the silicon solar cells in series, Arranged in line with the pads;

The back metallization pattern of each silicon solar cell

And a barrier configured to substantially limit the conductive adhesive bonding material to the at least one rear contact pads prior to curing the conductive adhesive bonding material during fabrication of the supercell.

67A. In the supercell of matter 66A, the back metallization pattern comprises one or more separate contact pads arranged in parallel rows adjacent and parallel to the second elongated sides, And a plurality of features to form separate barriers for each separate contact pad substantially restricting the conductive adhesive bond material to separate contact pads prior to curing of the adhesive bond material.

68A. In the supercell of matter 67A, the separate barriers are adjacent to their corresponding separate contact pads, and are larger.

69A. A method of making a string of solar cells, the method comprising:

Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a plurality of rectangular silicon solar cells each having substantially the same length along its long axis; And

Arranging the rectangular silicon solar cells in series with long sides of adjacent solar cells superimposed and electrically coupled to each other to electrically connect the solar cells in series;

Wherein the plurality of rectangular silicon solar cells comprises at least one rectangular solar cell having two chamfered edges corresponding to edges or corners of the pseudo square wafer and one Or more rectangular silicon solar cells;

Wherein the spacing between parallel lines in which the pseudo-square wafers are diced is a width that is orthogonal to the true axis of the rectangular silicon solar cells having the chamfered edges, the width of the rectangular silicon &lt; RTI ID = 0.0 &gt; Wherein each of said plurality of rectangular silicon solar cells in a string of solar cells has a substantially identical area of front surface exposed to light during operation of the string of solar cells, To compensate for the chamfered edges.

70A. The string of solar cells,

A plurality of silicon solar cells arranged in series with the ends of adjacent solar cells superimposed to electrically connect the solar cells in series and electrically coupled to each other;

Wherein at least one of the silicon solar cells has chamfered edges corresponding to edges or corners of a pseudo-square silicon wafer to which it has been diced, at least one of the silicon solar cells lacking chamfered edges, Each of the silicon solar cells has a front surface of substantially the same area exposed to light during operation of the string of solar cells.

71A. A method of making two or more strings of solar cells, the method comprising:

A first plurality of rectangular silicon solar cells having chamfered edges corresponding to the corners or edges of the pseudo-square silicon wafers and a first length over the entire length of each of the pseudo square silicon wafers Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a second plurality of rectangular silicon solar cells having and chamfered edges deficient;

From each of said first plurality of rectangular silicon solar cells to form a third plurality of rectangular silicon solar cells each having a second length less than said first length and lacking chamfered edges, said chamfered edges ;

A long side of adjacent rectangular silicon solar cells overlapped and electrically connected to each other to electrically connect the second plurality of rectangular silicon solar cells to form a solar cell string having the same width as the first length, Arranging the second plurality of rectangular silicon solar cells in line with the second plurality of rectangular silicon solar cells; And

A long side of adjacent rectangular silicon solar cells overlapped and electrically connected to each other to electrically connect the third plurality of rectangular silicon solar cells to form a solar cell string having the same width as the second length, And arranging the third plurality of rectangular silicon solar cells in line with the second plurality of rectangular silicon solar cells.

72A. A method of making two or more strings of solar cells, the method comprising:

A first plurality of rectangular silicon solar cells having chamfered edges corresponding to edges or portions of edges of pseudo-square silicon wafers and a second plurality of rectangular silicon solar cells lacking chamfered edges, Dicing one or more pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form a plurality of silicon wafers;

A first plurality of rectangular silicon solar cells arranged in series with long sides of adjacent rectangular silicon solar cells overlapping and electrically coupled to each other to electrically connect the first plurality of rectangular silicon solar cells in series; ; And

And arranging the second plurality of rectangular silicon solar cells in series with long sides of adjacent rectangular silicon solar cells superimposed and electrically coupled to each other to electrically connect the second plurality of rectangular silicon solar cells in series .

73A. A method of making a solar module, the method comprising:

A plurality of rectangular silicon solar cells having chamfered edges corresponding to the edges of the pseudo-square silicon wafers from a plurality of pseudo-square silicon wafers and a plurality of rectangular silicon solar cells lacking chamfered edges, Dicing a plurality of pseudo-square silicon wafers along a plurality of lines parallel to a long edge of each wafer to form cells;

Wherein the silicon solar cells are electrically connected in series to form a first plurality of super cells each having only the rectangular silicon solar cells deficient in the chamfered edges, Arranging at least some of the solar cells in line with the long sides of the silicon solar cells being superimposed and electrically coupled to each other;

And a plurality of rectangular silicon solar cells having chamfered edges to electrically connect the silicon solar cells in series to form a second plurality of super cells each having only the rectangular silicon solar cells having the chamfered edges, Arranging at least some of the solar cells in line with the long sides of the silicon solar cells being superimposed and electrically coupled to each other; And

Arranging the supercells in parallel rows of supersells of substantially equal length to form a front surface of the photovoltaic module, wherein each row includes only super cells from the first plurality of supersells, 2 Only the super cells from a plurality of super cells are provided.

74A. In the photovoltaic module of Item 73A, two of the rows of the supercells adjacent to the parallel and opposite edges of the solar module include only supercells from the second plurality of supercells, All other columns of the first super-cells include only super-cells from the first plurality of super-cells.

75A. In the solar module of Item 74A, the solar module comprises a total of six columns of supersells.

76A. The super-

A plurality of silicon solar cells arranged in a line in a first direction with ends of adjacent silicon solar cells superposed and electrically connected to each other to electrically connect the silicon solar cells in series; And

Wherein the silicon solar cell has a long axis oriented parallel to a second direction orthogonal to the first direction and is electrically conductive to the front or rear surface of the end of the silicon solar cells at three or more distinct locations arranged along the second direction And having a conductor thickness of less than or equal to about 100 microns measured orthogonally to the front or back surface of the end silicon solar cell and having a thickness of at least about 0.012 ohms And a differential expansion in the second direction between the end silicon solar cell and the interconnect for a temperature of about -40 &lt; 0 &gt; C to about 85 &lt; 0 &Lt; RTI ID = 0.0 &gt; flexible &lt; / RTI &gt; electrical interconnect.

77A. In the supercell of Item 76A, the flexible electrical interconnect has a conductor thickness less than or equal to about 30 microns, measured orthogonally to the front or rear surface of the end silicon solar cell.

78A. In the supercell of Item 76A, the flexible electrical interconnect extends in the second direction beyond the supercell for electrical interconnection to at least a second supercell located parallel and adjacent to the supercell within the solar module .

79A. In a supercell of matter 76A, said flexible electrical interconnect extends in said first direction through said supercell for electrical interconnection to at least a second supercell located in parallel and in a line in said solar cell module .

80A. The solar module,

And a plurality of supersells arranged in two or more parallel rows across the width of the module to form a front surface of the module, wherein each super cell overlaps to electrically connect the silicon solar cells in series, And a plurality of silicon solar cells arranged in series with the ends of adjacent silicon solar cells coupled to the plurality of silicon solar cells;

At least one end of the first super cell adjacent to an edge of the module in the first row is coupled to the front surface of the first super cell at a plurality of distinct locations with an electrically conductive adhesive bond material, Adjacent at the same edge of the module in a second row through a flexible electrical interconnect that is folded about the end of the first super cell and hidden from view from the front of the module, And is electrically connected to the end of the cell.

81A. In the photovoltaic module of Item 80A, the surfaces of the flexible electrical interconnect on the front of the module are covered or colored to reduce the visible contrast with the super cells.

82A. In a solar module of Item 80A, two or more parallel rows of the supercells are arranged on a white back sheet to form a front surface of the solar module illuminated by solar radiation during operation of the solar module, Wherein the white back sheet comprises parallel darkened stripes having positions and widths corresponding to positions and widths of gaps between parallel rows of the supercells and wherein white portions of the back sheets have a gap They are not seen through.

83A. A method of making a string of solar cells, the method comprising:

Laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on the silicon solar cells;

Applying an electrically conductive adhesive bond material to said one or more scribed silicon solar cells at one or more locations adjacent to long sides of each rectangular region;

Separating the silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells each having a portion of the electrically conductive adhesive bond material disposed on its front side along long sides;

Arranging the plurality of rectangular silicon solar cells in series with long sides of adjoining rectangular silicon solar cells overlapping in a shingled manner with a portion of the electrically conductive adhesive bonding material disposed therebetween ; And

Curing the electrically conductive binding material to bond adjacent and overlapping rectangular silicon solar cells together and connecting them electrically in series.

84A. A method of making a string of solar cells, the method comprising:

Laser scribing one or more scribe lines on each one or more silicon solar cells to define a plurality of rectangular regions on silicon solar cells, each solar cell having a top surface and a facing surface And a bottom surface positioned inwardly;

Applying an electrically conductive adhesive bond material to portions of the top surfaces of the one or more silicon solar cells;

Applying a vacuum between the bottoms of the one or more silicon solar cells and the support surface of the curve to bend the one or more silicon solar cells against the support surface of the curve, Cutting the one or more silicon solar cells along the scribe lines to provide a plurality of rectangular silicon solar cells having a portion of the electrically conductive adhesive bond material disposed on the front surface;

Arranging the plurality of rectangular silicon solar cells in series with long sides of adjoining rectangular silicon solar cells overlapping in a shingled manner with a portion of the electrically conductive adhesive bonding material disposed therebetween ;

Curing the electrically conductive binding material to bond adjacent and overlapping rectangular silicon solar cells together and connecting them electrically in series.

85A. 84. The method of claim 84A, wherein said electrically conductive adhesive bond material is applied to said one or more silicon solar cells, and thereafter said one or more scribe lines And a step of laser scribing.

86A. 84. The method of claim 84A, wherein laser scribing the one or more scribe lines on each of the one or more silicon solar cells, and then electrically bonding the electrically conductive adhesive bond material to the one or more silicon To solar cells.

1B. The apparatus includes:

Wherein each solar cell has a breakdown voltage greater than about 10 volts and is connected to a common bypass diode of at least 25 solar cells connected in parallel with a common bypass diode, And are grouped into a supercell having the solar cells arranged with side surfaces.

2B. In the same arrangement as in Item 1B, N is an integer greater than or equal to 30.

3B. In the same arrangement as in Item 1B, N is an integer greater than or equal to 50.

4B. In the same arrangement as in Item 1B, N is an integer greater than or equal to 100.

5B. In an apparatus as in Item 1B, the adhesive has a thickness of less than or equal to about 0.1 mm, and has a thermal conductivity of greater than or equal to about 1.5 W / m / K.

6B. In the same arrangement as in Item 1B, the N solar cells are grouped into a single supercell.

7B. In an apparatus as in Item 1B, the N solar cells are grouped into a plurality of supersells on the same backing.

8B. In the same apparatus as in Item 1B, the solar cells are silicon solar cells.

9B. In an apparatus as in Item 1B, the supercell has a length in the direction of a current flow of at least about 500 mm.

10B. In an apparatus as in Item 1B, the solar cells include features that are configured to limit diffusion of the adhesive.

11B. In the same arrangement as in Item 1B, the feature includes a raised feature.

12B. In the same apparatus as in Item 10B, the feature includes metallization.

* 13B. In the same arrangement as in Item 12B, the metallization includes a line extending to the full length of the first long side, the apparatus further comprising at least one contact pad located between the line and the first long side .

14B. In the same arrangement as in Item 13B,

The metallization further comprising fingers electrically connected to the at least one contact pad and proceeding perpendicularly to the first long side;

The conductive lines interconnect the fingers.

15B. In the same arrangement as in Item 10B, the feature is on the front side of the solar cell.

16B. In the same arrangement as in Item 10B, the feature is on the rear side of the solar cell.

17B. In the same arrangement as in Item 10B, the feature includes a recessed feature.

18B. In the same arrangement as in Item 10B, the feature is hidden by the adjacent solar cell of the supercell.

19B. In an apparatus as in Item 1B, the first solar cell of the supercell has chamfered edges, the second solar cell of the supercell lacks chamfered edges, and the first solar cell and the second solar cell Solar cells have the same area exposed to light.

20B. A flexible electrical interconnect having an elongate axis parallel to a second direction orthogonal to the first direction in an apparatus as in Item 1B, wherein the flexible electrical interconnect is conductively coupled to the surface of the solar cell, To accommodate the thermal expansion of the solar cell.

21B. In the same arrangement as in Item 20B, the flexible electrical interconnect has a thickness less than or equal to about 100 microns to provide a resistance less than or equal to about 0.012 ohm.

22B. In the same arrangement as in Item 20B, the surface includes a back surface.

23B. In the same arrangement as in Item 20B, the flexible electrical interconnect is in contact with another supercell.

24B. In an apparatus as in Item 23B, the other super cell is aligned with the super cell.

25B. In an apparatus as in Item 23B, the other supercell is adjacent to the supercell.

26B. In an arrangement such as in Item 20B, the first portion of the interconnect is folded about the edge of the supercell so that the remaining second interconnect portion is on the back side of the supercell.

27B. In the same arrangement as in Item 20B, the flexible electrical interconnect is electrically connected to the bypass diode.

28B. In an arrangement as in Item 1B, the plurality of supercells are arranged in two or more parallel rows on the backsheet to form the entire surface of the solar module, the backsheet is white and corresponds to the gaps between the super cells Lt; RTI ID = 0.0 &gt; of &lt; / RTI &gt;

29B. In an apparatus as in Item 1B, the supercell includes at least a pair of cell strings connected to a power management system.

30B. In the same device as in Item 1B,

And a control circuit for electrically communicating with the super cell,

Receiving a voltage output of the supercell;

Determine whether the solar cell is reverse-biased based on the voltage;

And a power management device configured to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

31B. In an apparatus as in Item 1B, the supercell is arranged on a first backing to form a first module having a top conductive ribbon on a first side facing the direction of solar energy,

Further comprising another supercell disposed on the second backing to form a second module having a lower ribbon on a second side facing away from the direction of the solar energy,

The second module overlaps and engages with a portion of the first module comprising the top ribbon.

32B. In an apparatus as in Item 31B, said second module is coupled to said first module by an adhesive.

33B. In an apparatus as in Item 31B, said second module is associated with said first module by a matching arrangement.

34B. In an apparatus as in Item 31B, the apparatus further comprises a junction box overlapped by the second module.

35B. In an apparatus as in point 34B, said second module is associated with said first module by a matching arrangement.

36B. In an apparatus as in Item 35B, said matching arrangement is between said junction box on said second module and another junction box.

37B. In an apparatus as in Item 31B, the first backing comprises glass.

38B. In the same arrangement as in Item 31B, the first backing includes glass and others.

39B. In an apparatus as in Item 1B, the solar cell comprises a chamfered portion that is cut from a larger piece.

40B. In an apparatus as in Item 39B, the supercell further includes another solar cell having a chamfered portion, wherein the long side of the solar cell is in electrical contact with the long side of another solar cell having a similar length.

1C1. Way,

Forming a supercell comprising a series of at least N &gt; 25 solar cells on the same backing, each solar cell having a breakdown voltage greater than about 10 volts, Lt; RTI ID = 0.0 &gt; solar cells &lt; / RTI &gt;

And connecting each supercell to a single bypass diode as much as possible.

2C1. In the same way as in Item 1C1, N is an integer greater than or equal to 30.

3C1. In the same way as in Item 1C1, N is an integer greater than or equal to 50.

4C1. In the same way as in Item 1C1, N is an integer greater than or equal to 100.

5C1. In the same manner as in item 1C1, the adhesive has a thickness of less than or equal to about 0.1 mm, and has a thermal conductivity of greater than or equal to about 1.5 w / m / k.

6C1. In the same way as in Item 1C1, the solar cells are silicon solar cells.

7C1. In the same manner as in item 1C1, the supercell has a length in the direction of a current flow of at least about 500 mm.

8C1. The method of claim 1C1, wherein the first solar cell of the supercell has chamfered edges, the second solar cell of the supercell lacks chamfered edges, and the first and second solar cells Solar cells have the same area exposed to light.

9C1. In the same way as in Item 1C1, the method further comprises limiting the diffusion of the adhesive utilizing features on the surface of the solar cell.

10C1. In the same way as in Item 9C1, the feature includes an overhang feature.

11C1. In the same manner as in Item 9C1, the feature includes metallization.

12C1. In a method as in Item 11C1, the metallization includes a line extending to the full length of the first long side, and at least one contact pad is located between the line and the first long side.

13C1. In the same way as in Item 12C1,

The metallization further comprising fingers electrically connected to the at least one contact pad and proceeding perpendicularly to the first long side;

The conductive lines interconnect the fingers.

14C1. In the same manner as in Item 9C1, the feature is on the front side of the solar cell.

15C1. In the same manner as in item 9C1, the feature is on the rear side of the solar cell.

16C1. In the same way as in Item 9C1, the feature includes the recessed feature.

17C1. In the same manner as in item 9C1, the feature is hidden by the adjacent solar cell of the supercell.

18C1. In the same manner as in item 1C1, the method further comprises forming another supercell on the same backing.

19C1. In the same way as in Item 1C1,

Electrically coupling a flexible electrical interconnect having a long axis parallel to a second direction perpendicular to the first direction on a surface of the solar cell; And

 And causing the flexible electrical interconnect to receive thermal expansion of the solar cell with two dimensions.

20C1. In the same manner as in Item 19C1, the flexible electrical interconnect has a thickness less than or equal to about 100 microns to provide a resistance less than or equal to about 0.012 ohms.

21C1. In the same manner as in Item 19C1, the surface includes a back surface.

22C1. In a method as in 19C1, further comprises the step of contacting another supercell with said flexible electrical interconnect.

23C1. In the same manner as in item 22C1, the other super cells are arranged in line with the super cells.

24C1. In the same manner as in item 22C1, the other supercell is adjacent to the supercell.

25C1. The method further comprises the step of folding the first portion of the interconnect around the edge of the supercell so that the remaining second interconnect portion is on the back side of the supercell.

26C1. In a method as in 19C1, the method further comprises electrically connecting the flexible electrical interconnect to the bypass diode.

27C1. In the same way as in Item 1C1,

Further comprising arranging a plurality of supercells in two or more parallel rows on the same backing to form a front surface of the solar module, wherein the back sheet is white and has a position and width corresponding to the gaps between the super cells Lt; / RTI &gt;

28C1. The method as in 1C1 further comprises connecting at least a pair of cell strings to a power management system.

29C1. In the same way as in Item 1C1,

Electrically connecting the power management device with the supercell;

Causing the power management to receive a voltage output of the supercell;

Causing the power management device to determine, based on the voltage, whether the solar cell is in reverse bias; And

And causing the power management apparatus to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

30C1. In a method as in 1C1, the supercell is arranged on the backing to form a first module having a top conductive ribbon on a first side facing the direction of solar energy,

Further comprising placing another supercell on another backing to form a second module having a bottom ribbon on a second side facing away from the direction of the solar energy,

The second module overlaps and engages with a portion of the first module comprising the top ribbon.

31C1. In the same manner as in item 30C1, the second module is bonded to the first module by an adhesive.

32C1. In the same manner as in item 30C1, the second module is coupled to the first module by a matching arrangement.

33C1. In the same manner as in item 30C1, the method further comprises overlapping the junction box with the second module.

34C1. In a method as in point 33C1, said second module is coupled to said first module by a matching arrangement.

35C1. In a method as in point 34C1, said matching arrangement is between said junction box on said second module and another junction box.

36C1. In the same way as in Item 30C1, the backing comprises glass.

37C1. In the same way as in Item 30C1, the backing includes something other than glass.

38C1. In the same way as in Item 30C1,

Connecting the relay switch electrically in series between the first module and the second module;

Sensing a voltage output of the first module by a controller; And

Further comprising activating the relay switch with the controller, the output voltage falling below a limit.

39C1. In the same manner as in item 1C1, the solar cell comprises a chamfered section cut from a larger piece.

40C1. In a method as in Item 39C1, the step of forming the supercell includes placing the long side of the solar cell in electrical contact with a similar long side of another solar cell having a chamfered portion.

1C2. The apparatus includes:

A photovoltaic module having a front surface comprising a first series connected string of at least 19 solar cells grouped into a first super cell arranged with long sides of adjacent solar cells overlapping and electrically connected by an adhesive; And

And a ribbon conductor electrically connected to the rear contact of the first supercell to provide a hidden tab to the electrical component.

2C2. In the same arrangement as in Item 1C2, the electrical component includes a bypass diode.

3C2. In the same arrangement as in Item 2C2, the bypass diode is located on the rear surface of the solar module.

4C2. In the same arrangement as in Item 3C2, the bypass diode is located outside the junction box.

5C2. In the same arrangement as in Item 4C2, the junction box contains a single terminal.

6C2. In the same arrangement as in Item 3C2, the bypass diode is located near the edge of the solar module.

7C2. In the same arrangement as in Item 2C2, the bypass diode is located in the laminate structure.

8C2. In the same arrangement as in Item 7C2, the first supercell is encapsulated in the laminate structure.

9C2. In the same arrangement as in Item 2C2, the bypass diode is located around the periphery of the solar module.

10C2. In the same arrangement as in Item 1C2, the electrical components may include a module terminal, junction box, power management system, smart switch, relay, voltage sensing controller, center inverter, DC / .

11C2. In an apparatus as in Item 1C1, the electrical component is located on the back side of the solar module.

12C2. In an arrangement as in Item &lt; RTI ID = 0.0 &gt; 1C1, &lt; / RTI &gt; the solar module further comprises a second serially connected string of at least 19 solar cells grouped into a second supercell having a first end electrically connected in series to the first supercell .

13C2. In an apparatus as in Item 12C2, the second super cell overlaps with the first super cell and is electrically connected in series with a conductive adhesive.

14C2. In the same arrangement as in Item 12C2, the rear contact is located away from the first end.

15C2. In the same arrangement as in 12C2, it further comprises a flexible interconnect between said first end and said first supercell.

16C2. In the same arrangement as in 15C2, the flexible interconnect extends through the side edges of the first and second supercells to electrically connect the first and second supercells in electrical parallel with the other supercells.

17C2. In an apparatus as in Item 1C2, the adhesive has a thickness of less than or equal to about 0.1 mm and a thermal conductivity of greater than or equal to about 1.5 w / m / k.

18C2. In an apparatus as in Item 1C2, the solar cells are silicon solar cells having a breakdown voltage greater than about 10V.

19C2. In an apparatus as in Item 1C2, the first supercell has a length in the direction of a current flow of at least about 500 mm.

20C2. In an apparatus as in Item 1C2, the solar cell of the first super cell includes a feature configured to limit diffusion of the adhesive.

21C2. In the same arrangement as in Item 20C2, the features include protruding features.

22C2. In an apparatus as in Item 21C2, the feature comprises metallization.

23C2. In an arrangement as in 22C2, said metallization comprises a conductive line running to the full length of said first long side, said apparatus comprising at least one contact pad located between said line and said first long side .

24C2. In the same arrangement as in Item 23C2,

The metallization further comprising fingers electrically connected to the at least one contact pad and proceeding perpendicularly to the first long side;

The conductive lines interconnect the fingers.

25C2. In the same arrangement as in Item 20C2, the feature is on the front side of the solar cell.

26C2. In the same arrangement as in Item 20C2, the feature is on the rear side of the solar cell.

27C2. In the same arrangement as in Item 20C2, the feature includes the recessed feature.

28C2. In an apparatus as in Item 20C2, the feature is hidden by an adjacent solar cell of the first super cell.

29C2. In an apparatus as in Item 1C2, the solar cell of the first super cell includes a chamfered portion.

30C2. In an apparatus as in Item 29C2, the first supercell further includes another solar cell comprising a chamfered portion, wherein the long side of the solar cell is electrically contacted with a long side of another solar cell having a similar length do.

31C2. In the apparatus as in Item 29C2, the first super cell further includes a solar cell lacking chamfered edges, and the solar cell and the other solar cell have the same area exposed to light.

32C2. In the same apparatus as in Item 1C2,

The first supercell is aligned with a second supercell in rows parallel to the front surface of the backing sheet;

The backing sheet is white and comprises darkened stripes of position and width corresponding to the gaps between the first supercell and the second supercell.

33C2. In an arrangement as in Item 1C2, the first super cell includes at least one pair of strings connected to the power management system.

34C2. In an apparatus as in Item 1C2, in electrical communication with said first super cell,

Receiving a voltage output of the first super cell;

Determine, based on the voltage, whether the solar cell of the first supercell is reverse biased;

And a power management device configured to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

35C2. In the same arrangement as in Item 34C2, the power management device includes a relay.

36C2. In an apparatus as in Item 1C2, the first supercell is arranged on a first backing to form a module having a top conductive ribbon on a first side facing the direction of solar energy,

Further comprising another supercell disposed on the second backing to form another module having a lower ribbon on a second side facing away from the direction of the solar energy,

The other module is overlapped and joined with a portion of the module comprising the top ribbon.

37C2. In the same arrangement as in Item 36C2, the other module is bonded to the module by an adhesive.

38C2. In the same arrangement as in Item 36C2, the other modules are coupled to the module by a matching arrangement.

39C2. In the same arrangement as in Item 36C2, it further comprises a junction box overlapped by the other module.

40C2. In an arrangement such as that of item 39C2, said other module is associated with said module by a matching arrangement located between said junction box and another junction box on another solar module.

1C3. The apparatus includes:

A first super cell disposed on a front surface of the solar module and having a plurality of solar cells each having a breakdown voltage greater than about 10 V;

A first ribbon conductor electrically connected to the backside contact of the first supercell to provide a first hidden tab to the electrical component;

A second supercell disposed on a front surface of the solar module and having a plurality of solar cells each having a breakdown voltage greater than about 10 V; And

And a second ribbon conductor electrically connected to the backside contact of the second supercell to provide a second hidden tab.

2C3. In an arrangement as in Item 1C3, the electrical component includes a bypass diode.

3C3. In the same arrangement as in Item 2C3, the bypass diode is located on the back side of the solar module.

4C3. In the same arrangement as in Item 3C3, the bypass diode is located outside the junction box.

5C3. In an apparatus as in Item 4C3, the junction box comprises a single terminal.

6C3. In the same arrangement as in Item 3C3, the bypass diode is located near the solar module edge.

7C3. In the same arrangement as in Item 2C3, the bypass diode is located within the laminate structure.

8C3. In the same arrangement as in Item 7C3, the first supercell is encapsulated in the laminate structure.

9C3. In the same arrangement as in 8C3, the bypass diode is located around the solar module periphery.

10C3. In an apparatus as in Item 1C3, the first supercell is connected in series with the second supercell.

11C3. In the same arrangement as in Item 10C3,

The first supercell and the second supercell forming a first pair;

The apparatus further comprises two additional supersells in a second pair connected in parallel with the first pair.

12C3. In an apparatus as in 10C3, said second hidden tab is connected to said electrical component.

13C3. In the same arrangement as in Item 12C3, the electrical component includes a bypass diode.

14C3. In an apparatus as in Item 13C3, the first supercell includes less than 19 solar cells.

15C3. In an arrangement as in 12C3, the electrical component comprises a power management system.

16C3. In the same arrangement as in Item 1C3, the electrical component includes a switch.

17C3. In a device such as 16C3, it further comprises a voltage sensing controller in communication with the switch.

18C3. In the same arrangement as in Item 16C3, the switch communicates with the center inverter.

19C3. In an arrangement as in Item 1C3,

Receiving a voltage output of the first super cell;

Determine, based on the voltage, whether the solar cell of the first supercell is reverse biased;

And a power management device configured to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

20C3. In an apparatus as in Item 1, the electrical component comprises an inverter.

21C3. In the same arrangement as in Item 20C3, the inverter includes a DC / AC microinverter.

22C3. In an arrangement as in Item 1C3, the electrical component comprises a solar module terminal.

23C3. In the same arrangement as in Item 22C3, the solar module terminal is a single solar module terminal in the junction box.

24C3. In an apparatus as in Item 1C3, the electrical component is located on the back side of the solar module.

25C3. In an arrangement as in Item 1C3, the rear contact is located away from the end of the first supercell overlapping the second supercell.

26C3. In an apparatus as in Item 1C3, the first supercell has a length in the direction of a current flow of at least about 500 mm.

27C3. In an apparatus as in Item 1C3, the solar cell of the first super cell includes a feature configured to limit diffusion of the adhesive.

28C3. In the same arrangement as in Item 27C3, the features include protruding features.

29C3. In an apparatus as in Item 28C3, said feature comprises metallization.

30C3. In the same arrangement as in Item 27C3, the features include recessed features.

31C3. In an apparatus as in Item 27C3, said feature is on the rear side of said solar cell.

32C3. In an apparatus as in Item 27C3, said feature is hidden by an adjacent solar cell of said first super cell.

33C3. In an apparatus as in Item 1C3, the solar cell of the first super cell includes a chamfered portion.

34C3. In an apparatus as in Item 33C3, the first supercell further comprises another solar cell having a chamfered portion, wherein the long side of the solar cell is in electrical contact with the long side of another solar cell having a similar length .

35C3. In an apparatus as in Item 33C3, the first supercell further includes another solar cell lacking chamfered edges, and the solar cell and the other solar cell have the same area exposed to light.

36C3. In the same apparatus as in Item 1C3,

The first super cell is arranged with the second super cell in parallel rows on the front surface of the backing sheet;

The backing sheet is white and includes darkened stripes of position and width corresponding to the gaps between the first and second super cells.

37C3. In an arrangement such as in Item 1C3, the first super cell is disposed on a first backing to form a module having a top conductive ribbon on the face of the module facing the direction of solar energy,

Further comprising a third supercell disposed on a second backing to form another module having a bottom ribbon on a second side facing away from the direction of the latent energy,

The other module is overlapped and joined with a portion of the module comprising the top ribbon.

38C3. In the same arrangement as in Item 37C3, the other module is bonded to the module by an adhesive.

39C3. In the same arrangement as in Item 37C3, it further comprises a junction box which is overlapped by the other module.

40C3. In an arrangement such as that of item 39C3, the other module is coupled with the other module by a matching arrangement between the junction box and the other junction box on the other module.

1C4. The apparatus includes:

A photovoltaic module having a front surface comprising a first series connected string of solar cells grouped into a first super cell arranged with the side faces of adjacent solar cells overlapping and the adhesive also being electroconductively coupled; And

And a solar cell surface feature configured to define the adhesive.

2C4. In an apparatus as in Item 1C4, the solar cell surface features include recessed features.

3C4. In an apparatus as in Item 1C4, the solar cell surface features include protruding features.

4C4. In the device as in Item 3C4, the protruding feature is on the front side of the solar cell.

5C4. In an apparatus as in Item 4C4, the protruding feature comprises a metallization pattern.

6C4. In an apparatus as in Item 5C4, the metallization pattern includes a conductive line running parallel to and substantially along the long side of the solar cell.

7C4. Item 6C4 further comprises a contact pad between the conductive line and the long side.

8C4. In the same arrangement as in Item 7C4,

The metallization pattern further comprising a plurality of fingers;

The conductive lines electrically interconnect the fingers to provide multiple conductive passages from each finger to the contact pad.

9C4. The device as in 7C4, further comprising a plurality of discrete contact pads arranged in parallel lower rows adjacent to said long side, said metallization pattern comprising a plurality of discrete contacts for limiting said adhesive to said separate contact pads Formed barrier.

10C4. In an arrangement as in 8C4, the plurality of discrete barriers are adjacent to corresponding discrete contact pads.

11C4. In an arrangement such as that of item 8C4, the plurality of discrete barriers are larger than the corresponding discrete contact pads.

12C4. In an apparatus as in Item 1C4, the solar cell surface features are hidden by overlapping sides of other solar cells.

13C4. In an apparatus as in Item 12C4, the other solar cell is part of the supercell.

14C4. In an apparatus as in Item 12C4, said another solar cell is part of another super cell.

15C4. In the same arrangement as in item 3C4, the protruding feature is on the back side of the solar cell.

16C4. In an apparatus as in Item 15C4, the protruding feature comprises a metallization pattern.

17C4. In an arrangement such as that in Item 16C4, the metallization pattern forms a plurality of discrete barriers to limit the adhesive to a plurality of discrete contact pads located on the front of another solar cell that is overlapped by the solar cell .

18C4. In an arrangement as in Item 17C4, the plurality of discrete barriers are adjacent to corresponding discrete contact pads.

19C4. In an arrangement as in Item 17C4, the plurality of discrete barriers are larger than the corresponding discrete contact pads.

* 20C4. In an apparatus as in Item 1C1, each solar cell of the supercell has a breakdown voltage of 10V or higher.

21C4. In an apparatus as in Item 1C1, the supercell has a length in the direction of a current flow of at least about 500 mm.

22C4. In an apparatus as in Item 1C1, the solar cell of the supercell includes a chamfered portion.

23C4. In an apparatus as in Item 22C4, the supercell further includes another solar cell having a chamfered portion, wherein the long side of the solar cell is in electrical contact with the long side of the other solar cell having a similar length.

24C4. In an apparatus as in Item 22C4, the supercell further comprises another solar cell lacking chamfered edges, wherein the solar cell and the other solar cell have the same area exposed to light.

25C4. In an apparatus as in Item 1C4, the supercell is arranged with a second supercell on the front surface of the first backing sheet to form a first module.

26C4. In an apparatus as in Item 25C4, the backing sheet is white and includes darkened stripes of a position and width corresponding to the gaps between the first and second super cells.

27C4. In an apparatus as in Item 25C4, said first module has a substantially conductive ribbon on the face of a first module facing the direction of solar energy,

Further comprising a third supercell disposed on a second backing to form a second module having a bottom ribbon on a second module side facing away from the solar energy,

The second module overlaps and engages with a portion of the first module comprising the top ribbon.

28C4. In an apparatus as in Item 27C4, said second module is joined by said adhesive to said first module.

29C4. In an apparatus as in Item 27C4, the apparatus further comprises a junction box overlapped by the second module.

30C4. In an apparatus as in Item 29C4, said second module is associated with said first module by a matching arrangement between said junction box on said second module and another junction box.

31C4. In the same arrangement as in Item 29C4, the junction box accommodates a single module terminal.

32C4. In an apparatus as in Item 27C4, the apparatus further comprises a switch between the first module and the second module.

33C4. In a device such as 32C4, it further comprises a voltage sensing controller in communication with the switch.

34C4. In an arrangement as in Item 27C4, the supercell includes less than nineteen solar cells connected electrically in parallel to a single bypass diode.

35C4. In an arrangement such as in item 34C4, the single bypass diode is located near the first module edge.

36C4. In the same arrangement as in Item 34C4, the single bypass diode is located in the laminate structure.

37C4. In the same arrangement as in Item 36C4, the supercell is encapsulated in the laminate structure.

38C4. In the same arrangement as in item 34C4, the single bypass diode is located around the first module periphery.

39C4. In an apparatus as in Item 25C4, the supercell and the second supercell include a pair individually connected to the power management apparatus.

40C4. In the same apparatus as in Item 25C4,

Receiving a voltage output of the supercell;

Determine, based on the voltage, whether the solar cell of the supercell is reverse biased;

And a power management unit configured to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

1C5. The apparatus includes:

A first series connection of silicon solar cells grouped into a first super cell comprising chamfered edges and a first silicon solar cell arranged with side surfaces overlapping the second silicon solar cell and being conductively coupled with an adhesive And a solar module including a front surface including a string.

2C5. In an apparatus as in Item 1C5, the second silicon solar cell lacks chamfered edges, and each silicon solar cell of the first super cell has substantially the same front surface area exposed to light.

3C5. In the same arrangement as in Item 2C5,

The first silicon solar cell and the second silicon solar cell have the same length;

The width of the first silicon solar cell is greater than the width of the second silicon solar cell.

4C5. In the same apparatus as in Item 3C5, the length regenerates the shape of the pseudo-square wafer.

5C5. In the same apparatus as in Item 3C5, the length is 156 mm.

6C5. In the same apparatus as in Item 3C5, the length is 125 mm.

7C5. In an apparatus as in Item 3C5, the aspect ratio between the width and the length of the first solar cell is from about 1: 2 to about 1: 20.

8C5. In an apparatus as in Item 3C5, the first silicon solar cell overlaps with the second silicon solar cell from about 1 mm to about 5 mm.

9C5. In an apparatus as in Item 3C5, the first super cell includes at least nineteen silicon solar cells each having a breakdown voltage greater than about 10 volts.

10C5. In an apparatus as in Item 3C5, the first supercell has a length in the direction of a current flow of at least about 500 mm.

11C5. In the same arrangement as in Item 3C5,

The first super cell is connected in parallel with the second super cell on the front surface;

The front surface includes a white backing characterizing darkened stripes of position and width corresponding to gaps between the first supercell and the second supercell.

12C5. In an apparatus as in Item 1C5, the second silicon solar cell comprises chamfered edges.

13C5. In an apparatus as in Item 12C5, the long side of the first silicon solar cell overlaps the long side of the second silicon solar cell.

14C5. In an apparatus as in Item 12C5, the long side of the first silicon solar cell overlaps the short side of the second silicon solar cell.

15C5. In an apparatus as in Item 1C5,

A first column comprising the first supercell consisting of solar cells having chamfered edges; And

And a second column comprising a second series-connected string of silicon solar cells grouped into a second supercell consisting of solar cells lacking chamfered edges, the second row being connected in parallel with the first super cell, The length of the second row is substantially the same as the length of the first row.

16C5. In the same arrangement as in Item 15C5, the first row is adjacent to the module edge and the second row is not adjacent to the module edge.

17C5. In an apparatus as in Item 15C5, the first supercell includes at least nineteen solar cells each having a breakdown voltage greater than about 10 volts, the first supercell having a current flow direction of at least about 500 mm .

18C5. In an apparatus as in Item 15C5, the front includes a white backing characterizing darkened stripes of position and width corresponding to gaps between the first and second super cells.

19C5. In an apparatus as in Item 1C5, the apparatus further comprises a metallization pattern on the front side of the second solar cell.

20C5. In the same arrangement as in Item 19C5, the metallization pattern includes a tapered portion extending around chamfered edges.

21C5. In the same arrangement as in Item 19C5, the metallization pattern includes features protruding to limit diffusion of the adhesive.

22C5. In an apparatus as in Item 19C5,

A plurality of discrete contact pads;

Fingers electrically coupled to the plurality of discrete contact pads; And

And a conductive line interconnecting the fingers.

23C5. In the same arrangement as in Item 22C5, the metallization pattern forms a plurality of discrete barriers that confine the adhesive to the separate contact pads.

24C5. In an arrangement as in Item 23C5, the plurality of discrete barriers are adjacent to, and larger than, the corresponding discrete contact pads.

25C5. The apparatus of claim 1C5 further comprises a flexible electrical interconnect electrically coupled to the surface of the first solar cell and receiving thermal expansion of the first solar cell in two dimensions.

26C5. In an apparatus as in Item 25C5, the first portion of the interconnect is folded about the edge of the first supercell so that the remaining second interconnect is on the back side of the first supercell.

27C5. In an apparatus as in Item 1C5, the module has a top conductive ribbon on the face facing the direction of solar energy,

Further comprising: a second super cell disposed on a front surface, the other module further comprising a bottom ribbon on another module facing away from the solar energy,

The second module overlaps and engages with a portion of the first module comprising the top ribbon.

28C5. In the same arrangement as in Item 27C5, the other module is bonded to the module by an adhesive.

29C5. In the same arrangement as in Item 27C5, it further includes a junction box which is overlapped by the other module.

30C5. In an apparatus as in Item 29C5, the other module is coupled to the other module by a matching arrangement between the junction box and the other junction box on the other module.

31C5. In the same arrangement as in Item 29C5, the junction box accommodates a single module terminal.

32C5. In an apparatus as in Item 27C5, further comprises a switch between the module and the other module.

33C5. In an arrangement such as that of item 32C5, it further comprises a voltage sensing controller in communication with the switch.

34C5. In an arrangement as in Item 27C5, the first supercell includes less than nineteen solar cells electrically connected to a single bypass diode.

35C5. In the same arrangement as in Item 34C5, the single bypass diode is located near the first module edge.

36C5. In the same arrangement as in Item 34C5, the single bypass diode is located in the laminate structure.

37C5. In the same arrangement as in Item 36C5, the supercell is encapsulated in the laminate structure.

38C5. In the same arrangement as in Item 34C5, the single bypass diode is located around the first module periphery.

39C5. In an apparatus as in Item 27C5, the first super cell and the second super cell include a pair connected to the power management device.

40C5. In the same arrangement as in Item 27C5,

Receiving a voltage output of the first super cell;

Determine, based on the voltage, whether the solar cell of the first supercell is reverse biased;

And a power management unit configured to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

1C6. The apparatus includes:

A first series connection of silicon solar cells grouped into a first super cell comprising chamfered edges and a first silicon solar cell stacked with a side overlapping the second silicon solar cell and electrically coupled with an adhesive And a solar module including a front surface including a string.

2C6. In an apparatus as in Item 1C6, the second silicon solar cell lacks chamfered edges, and each silicon solar cell of the first super cell has substantially the same front surface area exposed to light.

3C6. In the same arrangement as in Item 2C6,

The first silicon solar cell and the second silicon solar cell have the same length;

The width of the first silicon solar cell is greater than the width of the second silicon solar cell.

4C6. In the same arrangement as in Item 3C6, the length regenerates the shape of the pseudo-square wafer.

5C6. In the same arrangement as in Item 3C6, the length is 156 mm.

6C6. In the same arrangement as in Item 3C6, the length is 125 mm.

7C6. In an apparatus as in Item 3C6, the aspect ratio between the width and the length of the first solar cell is from about 1: 2 to about 1: 20.

8C6. In an apparatus as in Item 3C6, the first silicon solar cell overlaps with the second silicon solar cell by about 1 mm to about 5 mm.

9C6. In an apparatus as in Item 3C6, the first super cell includes at least nineteen silicon solar cells each having a breakdown voltage greater than about 10 volts.

10C6. In an apparatus as in Item 3C6, the first supercell has a length in the direction of a current flow of at least about 500 mm.

11C6. In the same arrangement as in Item 3C6,

The first super cell is connected in parallel with the second super cell on the front surface;

The front surface includes a white backing characterizing darkened stripes of position and width corresponding to gaps between the first supercell and the second supercell.

12C6. In an apparatus as in Item 1C6, the second silicon solar cell comprises chamfered edges.

13C6. In an apparatus as in Item 12C6, the long side of the first silicon solar cell overlaps the long side of the second silicon solar cell.

14C6. In an apparatus as in Item 12C6, the long side of the first silicon solar cell overlaps the short side of the second silicon solar cell.

15C6. In an apparatus as in Item 1C6,

A first column comprising the first supercell consisting of solar cells having chamfered edges; And

And a second column comprising a second series-connected string of silicon solar cells grouped into a second super cell consisting of solar cells lacking chamfered edges, connected in parallel with the supercell, The length of the two rows is substantially the same as the length of the first row.

16C6. In the same arrangement as in 15C6, the first row is adjacent to the module edge, and the second row is not adjacent to the module edge.

17C6. In an apparatus as in Item 15C6, the first supercell includes at least nineteen solar cells each having a breakdown voltage greater than about 10 volts, the first supercell having a current flow direction of at least about 500 mm .

18C6. In an arrangement as in Item 1C6, the front includes a white backing characterizing darkened stripes of a position and width corresponding to gaps between the first supercell and the second supercell.

19C6. In an apparatus as in Item 1C6, the apparatus further comprises a metallization pattern on the front side of the second solar cell.

20C6. In an apparatus as in 19C6, the metallization pattern includes a tapered portion extending around the chamfered edges.

21C6. In the same arrangement as in Item 19C6, the metallization pattern includes features protruding to limit diffusion of the adhesive.

22C6. In an apparatus as in Item 19C6,

A plurality of discrete contact pads;

Fingers electrically connected to a plurality of discrete contact pads; And

And a conductive line interconnecting the fingers.

23C6. In the same arrangement as in Item 22C6, the metallization pattern forms a plurality of discrete barriers to limit the adhesive to the separate contact pads.

24C6. In an arrangement such as in Item 23C6, the plurality of discrete barriers are adjacent to, and larger than, the corresponding discrete contact pads.

25C6. The device as in Item 1C6 further comprises a flexible electrical interconnect electrically coupled to the surface of the first solar cell and receiving thermal expansion of the first solar cell in two dimensions.

26C6. In an apparatus as in Item 25C6, the first portion of the interconnect is folded about the edge of the first supercell so that the remaining second interconnect is on the back surface of the first supercell.

27C6. In an arrangement as in Item 1C6, the module has a top conductive ribbon on the front facing the direction of solar energy,

A second super cell disposed on the front surface, and another module having a bottom ribbon on another module facing away from the solar energy,

The second module overlaps and is electrically coupled to a portion of the first module comprising the top ribbon.

28C6. In the same arrangement as in Item 27C6, the other module is bonded to the module by an adhesive.

29C6. In the same arrangement as in Item 27C6, it further includes a junction box which is overlapped by the other module.

30C6. In an arrangement such as that in Item 29C6, the other module is coupled with the module by a matching arrangement between the junction box and the other junction box on the other module.

31C6. In the same arrangement as in Item 29C6, the junction box accommodates a single module terminal.

32C6. In an apparatus as in Item 27C6, further comprises a switch between the module and the other module.

33C6. In a device like 32C6, it further comprises a voltage sensing controller in communication with the switch.

34C6. In an apparatus as in Item 27C6, the first super cell includes less than nineteen solar cells electrically connected to a single bypass diode.

35C6. In the same arrangement as in Item 34C6, the single bypass diode is located near the first module edge.

36C6. In the same arrangement as in Item 34C6, the single bypass diode is located within the laminate structure.

37C6. In the same arrangement as in Item 36C6, the supercell is encapsulated within the laminate structure.

38C6. In the same arrangement as in Item 34C6, the single bypass diode is located around the first module periphery.

39C6. In an apparatus as in Item 27C6, the first super cell and the second super cell include a pair connected to a power management device.

40C6. In the same arrangement as in Item 27C6,

Receiving a voltage output of the first super cell;

Determine, based on the voltage, whether the solar cell of the first supercell is reverse biased;

And a power management unit configured to disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

1C7. The apparatus includes:

At least nineteen solar cells grouped into a supercell comprising a first silicon solar cell each having a breakdown voltage greater than about 10 V and arranged with an end overlapping and electrically coupled to the second silicon solar cell A solar module having a front surface including a first series connected string; And

And an interconnect electrically coupled to the solar cell surface.

2C7. In an apparatus as in Item 1C7, the solar cell surface comprises the back surfaces of the first silicon solar cell.

3C7. In an apparatus as in Item 2C7, the apparatus further comprises a ribbon conductor for electrically connecting the supercell to the electrical component.

4C7. In an apparatus as in 3C7, the ribbon conductor is conductively coupled to the solar cell surface off the overlapping end.

5C7. In the same arrangement as in Item 4C7, the electrical component is on the back of the solar module.

6C7. In the same arrangement as in Item 4C7, the electrical component includes a junction box.

7C7. In the same arrangement as in Item 6C7, the junction box is in alignment with another junction box on another module that is overlaid by the module.

8C7. In the same arrangement as in Item 4C7, the electrical component includes a bypass diode.

9C7. In the same arrangement as in Item 4C7, the electrical component includes a module terminal.

10C7. In an arrangement as in Item 4C7, the electrical component comprises an inverter.

11C7. In the same arrangement as in 10C7, the inverter includes a DC / AC microinverter.

12C7. In the same arrangement as in 11C7, the DC / AC microinverter is on the back of the photovoltaic module.

13C7. In an apparatus as in Item 4C7, the electrical component includes a power management device.

14C7. In an apparatus as in Item 13C7, the power management apparatus includes a switch.

15C7. In an apparatus as in Item 14C7, the apparatus further comprises a voltage sensing controller in communication with the switch.

16C7. In an apparatus as in Item 13C7,

Receiving a voltage output of the supercell;

Determine, based on the voltage, whether the solar cell of the supercell is reverse biased;

And disconnect the solar cell, which is the reverse bias, from the super cell module circuit.

17C7. In an apparatus as in Item 16C7, the power management apparatus is in electrical communication with the central inverter.

18C7. In an apparatus as in Item 13C7, the power management apparatus includes a DC / DC module power optimizer.

19C7. In an apparatus as in Item 3C7, the interconnect is interposed between the super cell and the other super cell on the front surface.

20C7. In an apparatus as in 3C7, the ribbon conductor is conductively coupled to the interconnect.

21C7. In the same arrangement as in 3C7, the interconnect provides resistance to current flow less than or equal to about 0.012 ohms.

22C7. In an arrangement such as in Item 3C7, the interconnect is configured to accommodate differential thermal expansion between the first silicon solar cell and the interconnect for a temperature range of about -40 ° C to about 85 ° C.

23C7. In the same arrangement as in Item 3C7, the thickness of the interconnect is less than or equal to about 100 microns.

24C7. In the same arrangement as in Item 3C7, the thickness of the interconnect is less than or equal to about 30 microns.

25C7. In an apparatus as in 3C7, the supercell has a length in the direction of a current flow of at least about 500 mm.

26C7. In the same arrangement as in Item 3C7, it further includes another supercell on the front of the module.

27C7. In an apparatus as in Item 26C7, the interconnect connects the other supercell in series with the supercell.

28C7. In an apparatus as in Item 26C7, the interconnect connects the other super cell in parallel with the super cell.

29C7. In an apparatus as in Item 26C7, the front includes a white backing characterizing darkened stripes of position and width corresponding to gaps between the supercell and the other supercell.

30C7. In the same arrangement as in Item 3C7, the interconnect includes a pattern.

31C7. In an apparatus as in Item 3C7, the pattern includes slits, slots and / or holes.

32C7. In the same arrangement as in Item 3C7, some of the interconnects are dark.

33C7. In the same arrangement as in Item 3C7,

Wherein the first silicon solar cell comprises chamfered edges;

Wherein the second silicon solar cell is deficient in chamfered edges;

Each of the silicon solar cells of the supercell has substantially the same front surface area exposed to light.

34C7. In the same arrangement as in Item 3C7,

Wherein the first silicon solar cell comprises chamfered edges;

The second silicon solar cell comprising chamfered edges;

And a side surface having a long side overlapping with a long side surface of the second silicon solar cell.

35C7. In the same arrangement as in Item 3C7, the interconnect forms a bus.

36C7. In an apparatus as in 3C7, the interconnect is conductively coupled to the solar cell surface at the junction where it is bonded.

37C7. In an arrangement as in 3C7, the first part of the interconnect is folded about the edge of the supercell so that the remaining second part is located on the back side of the supercell.

38C7. The apparatus of claim 3C7, further comprising a metallization pattern on the front surface having a line running along a long side, the apparatus comprising a plurality of separate contact pads located between the line and the long side .

39C7. In the same arrangement as in Item 38C7,

The metallization further comprising fingers electrically connected to respective separate contact pads and proceeding orthogonally to the long side;

The conductive lines interconnect the fingers.

40C7. In the same arrangement as in Item 38C7, the metallization pattern includes features protruding to limit diffusion of the adhesive.

1C8. The apparatus includes:

Each supercell having a breakdown voltage of at least 10V and having an adjacent silicon solar cell which is superimposed and conductively coupled to electrically connect the silicon solar cells electrically in series, At least nineteen silicon solar cells arranged in series with the ends of the cells;

The end of the first supercell adjacent to the module edge in the first row is electrically connected to the end of the second supercell adjacent to the module edge in the second row through a flexible electrical interconnect coupled to the front side of the first supercell .

2C8. In the same arrangement as in 1C8, part of the flexible electrical interconnect is covered by a dark film.

3C8. In an arrangement as in Item 2C8, the solar module front surface includes a backing sheet that exhibits reduced visible contrast with the flexible electrical interconnect.

4C98. In an arrangement such as in Item 1C8, a portion of the flexible electrical interconnect is colored.

5C8. In an arrangement as in 4C8, the solar module front surface includes a backing sheet that exhibits reduced visible contrast with the flexible electrical interconnect.

6C8. In an arrangement such as in Item 1C8, the solar module front includes a white backing sheet.

7C8. In the same arrangement as in Item 6C8, it further includes darkened stripes corresponding to the gaps between the columns.

8C8. In an apparatus as in Item 6C8, the n-type semiconductor layer of the silicon solar cell faces the backing sheet.

9C8. In the same apparatus as in Item 1C8,

The front surface of the solar module includes a back sheet;

The backsheet, the flexible electrical interconnect, the first supercell, and the encapsulant comprise a laminated structure.

10C8. In an apparatus as in Item 9C8, the encapsulant comprises a thermoplastic polymer.

11C8. In an apparatus as in Item 10C8, the thermoplastic polymer comprises a thermoplastic olefin polymer.

12C8. In the same arrangement as in Item 9C8, it further includes a windshield sheet.

13C8. In the same arrangement as in 12C8, the back sheet comprises glass.

14C8. In an arrangement such as in Item 1C8, the flexible electrical interconnect is joined at a plurality of discrete locations.

15C8. In the same arrangement as in Item 1C8, the flexible electrical interconnect is bonded with an electrically conductive adhesive bond material.

16C8. In the same apparatus as in Item 1C8, it further includes a connection site to be glued.

17C8. In an arrangement such as in Item 1C8, the flexible electrical interconnect proceeds parallel to the module edge.

18C8. In an arrangement as in Item 1C8, a portion of the flexible electrical interconnect is folded and hidden around the first supercell.

19C8. In an apparatus as in 1C8, it further comprises a ribbon conductor for electrically connecting the first supercell to an electrical component.

20C8. In the same arrangement as in Item 19C8, the ribbon conductor is conductively connected to the flexible electrical interconnect.

21C8. In the same arrangement as in Item 19C8, the ribbon conductor is electrically coupled to the solar cell surface away from the overlapping end.

* 22C8. In the same arrangement as in Item 19C8, the electrical component is on the back of the photovoltaic module.

23C8. In the same arrangement as in Item 19C8, the electrical component includes a junction box.

24C8. In the same arrangement as in Item 23C8, the junction box is arranged to coincide with another junction box on the front of another solar module.

25C8. In an apparatus as in Item 23C8, the junction box comprises a single terminal junction box.

26C8. In the same arrangement as in Item 19C8, the electrical component includes a bypass diode.

27C8. In the same arrangement as in Item 19C8, the electrical component includes a switch.

28C8. In the same arrangement as in Item 27C8,

Receiving a voltage output of the first super cell;

Determine, based on the voltage, whether the solar cell of the first supercell is reverse biased;

And a voltage sensing controller configured to communicate with the switch to disconnect the solar cell, which is reverse biased, from the supercell module circuit.

29C8. In an apparatus as in Item 1C8, the first supercell is in series with the second supercell.

30C8. In the same apparatus as in Item 1C8,

Wherein the first silicon solar cell of the first super cell comprises chamfered edges;

Wherein the second silicon solar cell of the first supercell lacks chamfered edges;

Each of the silicon solar cells of the first super cell has a substantially same front surface area exposed to light.

31C8. In the same apparatus as in Item 1C8,

Wherein the first silicon solar cell of the first super cell comprises chamfered edges;

Wherein the second silicon solar cell of the first super cell comprises chamfered edges;

The long side of the first silicon solar cell overlaps the long side of the second silicon solar cell.

32C8. In an apparatus as in Item 1C8, the silicon solar cell of the first super cell comprises a strip having a length of about 156 mm.

33C8. In an apparatus as in Item 1C8, the silicon solar cell of the first super cell includes a strip having a length of about 125 mm.

34C8. In an apparatus as in Item 1C8, the silicon solar cell of the first super cell includes a strip having an aspect ratio between about 1: 2 and about 1:

35C8. In an apparatus as in Item 1C8, the overlapping and adjoining silicon solar cells of the first super cell are conductively coupled to an adhesive, the apparatus further comprising a feature configured to limit diffusion of the adhesive.

36C8. In the same arrangement as in Item 35C8, the feature includes a moat.

37C8. In the same arrangement as in Item 36C8, the moat is formed by a metallization pattern.

38C8. In an apparatus as in Item 37C8, the metallization pattern comprises a line running along a long side of the silicon solar cell, the apparatus further comprising a plurality of separate contact pads located between the line and the long side .

39C8. In an apparatus as in Item 37C8, the metallization pattern is located on the front surface of the silicon solar cell of the first super cell.

40C8. In an apparatus as in Item 37C8, the metallization pattern is located on the back surface of the silicon solar cell of the second super cell.

1C9. The apparatus includes:

A solar cell having a front surface comprising serially connected silicon solar cells grouped into a first super cell comprising a first cut strip having a front metallization pattern along a first outer edge overlapping by a second cut strip, Module.

2C9. In an apparatus as in Item 1C9, the first cut strip and the second cut strip have a length regenerating the shape of the wafer into which the first cut strip is divided.

3C9. In the same apparatus as in Item 2C9, the length is 156 mm.

4C9. In the same apparatus as in Item 2C9, the length is 125 mm.

5C9. In an apparatus as in Item 2C9, the aspect ratio between the width and the length of the first cut strip is from about 1: 2 to about 1: 20.

6C9. In an apparatus as in 2C9, said first cut strip comprises a first chamfered edge.

7C9. In an apparatus as in 6C9, said first chamfered edge follows said first outer edge.

8C9. In an apparatus as in 6C9, said first chamfered edge does not follow said first outer edge.

9C9. In an apparatus as in 6C9, said second cut strip comprises a second chamfered edge.

10C9. In an apparatus as in 9C9, the overlapping edges of said second cut strip comprise said second chamfered edge.

11C9. In an apparatus as in 9C9, the overlapping edges of the second cut strip do not include the second chamfered edges.

12C9. In an apparatus as in 6C9, said length regenerates the shape of a pseudo-square wafer into which said first cut strip is divided.

13C9. In an apparatus as in 6C9, the width of the first cut strip is different from the width of the second cut strip so that the first cut strip and the second cut strip have approximately the same area.

14C9. In an apparatus as in 1C9, said second cut strip overlaps with said first cut strip about 1 mm - 5 mm.

15C9. In an apparatus as in 1C9, the front metallization pattern comprises a bus bar.

16C9. In the same arrangement as in 15C9, the bus bar includes a tapered portion.

17C9. In the same arrangement as in Item 1C9, the front metallization pattern includes separate contact pads.

18C9. In the same apparatus as in Item 17C9,

The second cut strip is adhered to the first cut strip by an adhesive;

The separate contact pads further include features that limit adhesive diffusion.

19C9. In the same arrangement as in Item 18C9, the feature includes motors.

20C9. In the same arrangement as in Item 1C9, the front metallization pattern includes a bypass conductor.

21C9. In an apparatus as in Item 1C9, the front metallization pattern comprises a finger.

22C9. In an apparatus as in 1C9, said first cut strip further comprises a rear metallization pattern along a second outer edge opposite said first outer edge.

23C9. In the same arrangement as in Item 22C9, the rear metallization pattern comprises a contact pad.

24C9. In the same arrangement as in Item 22C9, the rear metallization pattern includes a bus bar.

25C9. In an apparatus as in Item 1C9, the supercell includes at least nineteen silicon cut strips each having a breakdown voltage greater than about 10 volts.

26C9. In an apparatus as in Item 1C9, the super cell is connected to another super cell on the module front side.

27C9. In the same arrangement as in Item 26C9, the module front includes a white backing characterizing darkened stripes corresponding to gaps between the supercell and the other supercell.

28C9. In the same device as in Item 26C9,

The front surface of the solar module includes a back sheet;

The backsheet, the interconnect, the supercell, and the encapsulant comprise a laminated structure.

29C9. In an apparatus as in Item 28C9, the encapsulant comprises a thermoplastic polymer.

30C9. In an apparatus as in Item 26C9, the thermoplastic polymer comprises a thermoplastic olefin polymer.

31C9. In an apparatus as in Item 26C9, the apparatus further comprises an interconnect between the supercell and the other supercell.

32C9. In the same arrangement as in Item 31C9, part of the interconnect is covered by a dark film.

33C9. In the same arrangement as in Item 31C9, a part of the interconnect is colored.

34C9. In an arrangement such as that of item 31C9, it further comprises a ribbon conductor for electrically connecting the supercell to an electrical component.

35C9. In an apparatus as in Item 34C9, the ribbon conductor is conductively coupled to the backside of the first cut strip.

36C9. In the same arrangement as in Item 34C9, the electrical component includes a bypass diode.

37C9. In the same arrangement as in Item 34C9, the electrical component includes a switch.

38C9. In the same arrangement as in Item 34C9, the electrical component includes a junction box.

39C9. In the same arrangement as in Item 38C9, the junction box overlaps and coincides with the other junction box.

40C9. In an apparatus as in Item 26C9, the supercell and the supercell are connected in series.

1C10. Way,

Laser scribing a scribe line on a silicon wafer to define a solar cell area;

Applying an electrically conductive adhesive bond material to an upper surface of a scribed silicon wafer adjacent a long side of the solar cell region; And

And separating the silicon wafer along the scribe line to provide a solar cell strip comprising a portion of the electrically conductive adhesive bond material disposed adjacent the long side of the solar cell strip.

2C10. In a method as in 1C10, said separating further comprises providing said metallization pattern to said silicon wafer to produce said solar cell strip having a metallization pattern along said long side.

3C10. In a method as in 2C10, the metallization pattern comprises a bus bar or a separate contact pad.

4C10. In a method as in Item 2C10, the providing step comprises printing the metallization pattern.

5C10. In a method as in Item 2C10, the step of providing comprises electroplating the metallization pattern.

6C10. In a method as in Item 2C10, the metallization pattern comprises a feature configured to limit diffusion of the electrically conductive adhesive bond material.

7C10. In the same manner as in Item 6C10, the feature includes a motto.

8C10. In a method as in 1C10, said applying step comprises printing.

9C10. In a method as in Item 1C10, the applying step comprises depositing using a mask.

10C10. In the same manner as in item 1C10, the length of the long side of the solar cell strip regenerates the shape of the wafer.

11C10. In the same manner as in Item 10C10, the length is 156 mm or 125 mm.

12C10. In the same manner as in 10C10, the aspect ratio between the width and the length of the solar cell strip is from about 1: 2 to about 1: 20.

13C10. In a method as in Item &lt; RTI ID = 0.0 &gt; 1C10, &lt;

Applying a vacuum between the bottom surface of the wafer and the support surface of the curved line to bend the solar cell area relative to the support surface of the curve, thereby cutting the silicon wafer along the scribe line.

14C10. In the same way as in Item 1C10,

Arranging a plurality of solar cell strips in series with overlapping long side surfaces of adjacent solar cell strips and a portion of the electrically conductive adhesive bond material disposed therebetween; And

Curing the electrically conductive bonding material to bond adjacent and overlapping solar cell strips together and electrically connecting them in series.

15C10. In a method as in Item 14C10, the step of curing includes applying heat.

16C10. In a method as in Item 14C10, the step of curing includes applying pressure.

17C10. In the same manner as in Item 14C10, the arranging step includes forming a stratified structure.

18C10. In a method as in Item 17C10, the step of curing includes applying heat and pressure to the stratified structure.

19C10. In the same way as in Item 17C10, the stratified structure comprises an encapsulant.

20C10. In the same manner as in item 19C10, the encapsulant comprises a thermoplastic polymer.

21C10. In the same manner as in Item 20C10, the thermoplastic polymer comprises a thermoplastic olefin polymer.

22C10. In the same manner as in Item 17C10, the stratified structure comprises a backing sheet.

23C10. In the same way as in Item 22C10,

The backing sheet is white;

The stratified structure further comprises darkened stripes.

24C10. In a method as in Item 14C10, said arranging comprises arranging at least nineteen solar cell strips in a row.

25C10. In the same manner as in Item 24C10, each of said at least nine to nine solar cell strips has a breakdown voltage of at least 10V.

26C10. The method further comprises the step of disposing at least nineteen solar cell strips in communication with a single bypass diode in the same manner as in Item 24C10.

27C10. 26. A method as in 26C10, further comprising forming a ribbon conductor between one of said at least nineteen solar cell strips and said single bypass diode.

28C10. In the same manner as in Item 27C10, the single bypass diode is located in the junction box.

29C10. In the same manner as in Item 28C10, the junction box is on the back side of the solar module in a configuration coinciding with another junction box of another solar module.

30C10. In the same manner as in Item 14C10, the overlapping cell strips of the plurality of solar cell strips overlap with the solar cell strip to about 1 mm-5 mm.

31C10. In a method as in Item 14C10, the solar cell strip includes a first chamfered edge.

32C10. In the same manner as in Item 31C10, the long side of the overlapping solar cell strip of the plurality of solar cell strips does not include a second chamfered edge.

33C10. In the same manner as in Item 32C10, the width of the solar cell strip is greater than the width of the overlapping solar cell strip such that the solar cell strip and the overlapping solar cell strip have approximately the same area.

34C10. In a method as in Item 31C10, the long side of the overlapping solar cell strip of said plurality of solar cell strips comprises a second chamfered edge.

35C10. In the same manner as in item 34C10, the long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the cell strip including the first chamfered edge.

36C10. In the same manner as in Item 34C10, the long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the cell strip that does not include the first chamfered edge.

37C10. In a method as in Item 14C10, the method further comprises connecting the plurality of solar cell strips to another plurality of solar cell strips utilizing the interconnect.

38C10. In the same manner as in Item 37C10, a part of the interconnect is covered with a dark film.

39C10. In the same way as in Item 37C10, a part of the interconnect is colored.

40C10. In a method as in Item 37C10, the plurality of solar cell strips are connected in series with the other plurality of solar cell strips.

1C11. Way,

Providing a silicon wafer having a length;

Scribing a scribe line on the silicon wafer to define a solar cell area;

Applying an electrically conductive adhesive bond material to the surface of the silicon wafer; And

And separating the silicon wafer along the scribe line to provide a solar cell strip comprising a portion of the electrically conductive adhesive bond material disposed adjacent the long side of the solar cell strip.

2C11. In a method as in 1C11, the step of scraping includes laser scribing.

3C11. In a method as in 1C11, laser scribing the scribe line and then applying the electrically conductive adhesive bond material.

4C11. Applying the electrically conductive adhesive bond material to the wafer and then laser scribing the scribe line in the same manner as in Item 2C11.

5C11. In the same way as in Item 4C11,

Wherein the applying comprises applying an un-cured electrically conductive adhesive bond material;

The laser scribing step includes avoiding the step of curing the un-cured conductive adhesive bonding material with heat from the laser.

6C11. In a method as in 5C11, the avoiding step includes selecting a distance between the laser output and / or the scribe line and the uncured conductive adhesive bond material.

7C11. In a method as in 1C11, said applying step comprises printing.

8C11. In a method as in 1C11, the applying step comprises depositing using a mask.

9C11. In a method as in 1C11, the scribe line and the electrically conductive adhesive bond material are on the surface.

10C11. In a method as in Item &lt; RTI ID = 0.0 &gt; 1C11, &lt;

Applying a vacuum between the surface of the wafer and the support surface of the curved line to bend the solar cell area with respect to the support surface of the curve, thereby cutting the silicon wafer along the scribe line.

11C11. In a method as in 10 C11, said separating step comprises arranging said scribe line at an angle to a vacuum manifold.

12C11. In a method as in 1C11, said separating comprises using a roller to apply pressure to the wafer.

13C11. The method as in 1C11, wherein said providing step further comprises the step of providing said metallization pattern to said silicon wafer to produce a solar cell strip having a metallization pattern along said long side .

14C11. In a method as in Item 13C11, the metallization pattern comprises a bus bar or a separate contact pad.

15C11. In a method as in Item 13C11, the providing step comprises printing the metallization pattern.

16C11. In a method as in Item 13C11, the step of providing comprises electroplating the metallization pattern.

17C11. In the same manner as in Item 13C11, the metallization pattern includes features that are configured to limit the diffusion of the electrically conductive adhesive bond material.

18C11. In a method as in Item 1C11, the length of the long side of the solar cell strip regenerates the shape of the wafer.

19C11. In the same manner as in Item 18C11, the length is 156 mm or 125 mm.

20C11. In the same manner as in Item 18C11, the width of the solar cell strip and the aspect ratio of the length sheath are from about 1: 2 to about 1: 20.

21C11. In the same way as in Item 1C11,

Arranging a plurality of solar cell strips in series with the long sides of the overlapping and adjacent solar cell strips and a portion of the electrically conductive adhesive bond material disposed therebetween; And

Curing the electrically conductive bonding material to couple adjacent and overlapping solar cell strips together and electrically connecting them in series.

22C11. In the same way as in Item 21C11,

Wherein the arranging comprises forming a layered structure;

The step of curing includes applying heat and / or pressure to the stratified structure.

23C11. In the same manner as in Item 22C11, the stratified structure comprises a thermoplastic olefin polymer encapsulant.

24C11. In the same manner as in Item 22C11, the above-

White backing sheet; And

And darkened stripes on the white backing sheet.

25C11. In the same way as in Item 22C11,

A plurality of wafers are provided on a template;

Wherein the conductive adhesive bond material is dispensed on the plurality of wafers;

The plurality of wafers are cells that are simultaneously separated into a plurality of solar cell strips by a fixture.

26C11. In a method as in Item 25C11, the method further comprises transporting the plurality of solar cell strips as a group, the arranging step comprising arranging the plurality of solar cell strips into a module.

27C11. In a method as in 21C11, said arranging comprises arranging at least nineteen solar cell strips having a breakdown voltage of at least 10V in series with only a single bypass diode.

28C11. 27. A method as in 27 C11, further comprising forming a ribbon conductor between one of said at least nineteen solar cell strips and said single bypass diode.

29C11. 28. The method as in 28C11, wherein the single bypass diode is located in a first junction box of a first solar module, the arrangement being coincident with a second junction box of a second solar module.

30C11. 27. A method as in 27C11, further comprising forming a ribbon conductor between one of said at least nineteen solar cell strips and a smart switch.

31C11. In the same manner as in Item 21C11, the overlapping cell strips of the plurality of solar cell strips overlap with the solar cell strip to about 1 mm-5 mm.

32C11. In the same manner as in Item 21C11, the solar cell strip includes a first chamfered edge.

33C11. In the same manner as in Item 32C11, the long side of the overlapped solar cell strip of the plurality of solar cell strips does not include a second chamfered edge.

34C11. In the same manner as in Item 33C11, the width of the solar cell strip is larger than the overlapping solar cell strips so that the solar cell strip and the overlapping solar cell strip have approximately the same area.

35C11. In a method as in Item 32C11, the long side of the overlapping solar cell strip of said plurality of solar cell strips comprises a second chamfered edge.

36C11. In the same manner as in Item 35C11, the long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the cell strip including the first chamfered edge.

37C11. In the same manner as in Item 35C11, the long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the cell strip that does not include the first chamfered edge.

38C11. In a method as in Item 21C11, the method further comprises connecting the plurality of solar cell strips to another plurality of solar cell strips utilizing an interconnect.

39C11. In the same way as in Item 38C11, a part of the interconnect is covered or colored by a dark film.

40C11. In a method as in Item 38C11, the plurality of solar cell strips are connected in series with the other plurality of solar cell strips.

1C12. Way,

Providing a silicon wafer having a length;

Scribing a scribe line on a silicon wafer to define a solar cell area;

Separating the silicon wafer along the scribe line to provide a solar cell strip; And

Disposed adjacent to the long side of the solar cell strip

And applying an electrically conductive adhesive bond material.

2C12. In the same method as in Item 1C12, the step of scraping includes laser scribing.

3C12. In a method as in 1C12, the applying step comprises screen printing.

4C12. In a method as in 1C12, said applying step comprises ink jet printing.

5C12. In a method as in 1C12, the applying step comprises depositing using a mask.

6C12. In a method as in 1C12, said separating comprises applying a vacuum between the surface of the wafer and the surface of the curve.

7C12. In a method as in 6C12, the surface of said curve comprises a vacuum manifold, said separating comprising orienting said scribe line at an angle to said vacuum manifold.

8C12. In the same manner as in Item 7C12, the angle is a right angle.

9C12. In the same manner as in Item 7C12, the angle is an angle other than a right angle.

10C12. In the same way as in item 6C12, the vacuum is applied through the moving belt.

11C12. In the same way as in Item 1C12,

Aligned with adjacent solar cell strips overlapping with the electrically conductive adhesive bond material disposed therebetween; And

Further comprising curing the electrically conductive bonding material to bond adjacent and overlapping solar cell strips electrically connected in series.

12C12. In a method as in 11C12, the arranging step comprises forming a stratified structure comprising an encapsulant, the method further comprising the step of laminating the stratified structure.

13C12. In a method as in 12C12, the step of curing is at least partially generated during the laminating step.

14C12. In the method as in Item 12C12, the step of curing is generated separately from the step of laminating.

15C12. In a method as in 12C12, said laminating step comprises applying a vacuum.

16C12. In the same way as in Item 15C12, the vacuum is applied to the bladder.

17C12. In the same way as in Item 15C12, the vacuum is applied to the belt.

18C12. In the same manner as in item 12C12, the encapsulant comprises a thermoplastic olefin polymer.

19C12. In the same manner as in Item 12C12, the above-

White backing sheet; And

And darkened stripes on the white backing sheet.

20C12. In a method as in 11C12, the providing step includes providing the metallization pattern to the silicon wafer to produce a solar cell strip having a metallization pattern along the long side.

21C12. In the same manner as in item 20C12, the metallization pattern comprises a bus bar or a separate contact pad.

22C12. In a method as in Item 20C12, the step of providing comprises printing or electroplating the metallization pattern.

23C12. In a method as in Item 20C12, the arranging step includes the step of limiting the diffusion of the electrically conductive adhesive bond material using the features of the metallization pattern.

24C12. In the same manner as in Item 23C12, the feature is on the front surface of the solar cell strip.

25C12. In the same manner as in Item 23C12, the feature is on the back surface of the solar cell strip.

26C12. In the same manner as in item 11C12, the length of the long side of the solar cell strip regenerates the shape of the wafer.

27C12. In the same way as in Item 26C12, the length is 156 mm or 125 mm.

28C12. In a method as in Item 26C12, the aspect ratio between the width and the length of the solar cell strip is from about 1: 2 to about 1: 20.

29C12. In a method as in 11C12, the arranging step includes arranging at least nineteen solar cell strips having a breakdown voltage of at least 10V as a first super cell in line with only a single bypass diode.

30C12. 29. The method of claim 29, further comprising applying the electrically conductive adhesive bond material between the first supercell and the interconnect.

31C12. In the same manner as in item 30C12, the interconnect connects the first supercell with the second supercell in parallel.

32C12. In the same manner as in item 30C12, the interconnect connects the first supercell with the second supercell in series.

33C12. 29. The method as in 29C12, further comprising forming a ribbon conductor between the first supercell and the single bypass diode.

34C12. In the same manner as in item 33C12, the single bypass diode is located in the first junction box of the first solar module, which is in alignment with the second junction box of the second solar module.

35C12. In a method as in 11C12, the solar cell strip includes a first chamfered edge.

36C12. In the same manner as in Item 35C12, the long side of the overlapped solar cell strip of the plurality of solar cell strips does not include a second chamfered edge.

37C12. 36. The method as in 36C12, wherein the width of the solar cell strip is greater than the width of the overlapping solar cell strip such that the solar cell strip and the overlapping solar cell strip have approximately the same area.

38C12. In a method as in Item 35C12, the long side of the overlapping solar cell strip of said plurality of solar cell strips comprises a second chamfered edge.

39C12. In the same manner as in Item 38C12, the long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the cell strip including the first chamfered edge.

40C12. In the same manner as in Item 38C12, the long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the cell strip that does not include the first chamfered edge.

1C13. The apparatus includes:

A semiconductor wafer having a first metallization pattern along a first outer edge and a first surface having a second metallization pattern along a second outer edge opposite the first outer edge, And a first scribe line between the first metallization pattern and the second metallization pattern.

2C13. In an apparatus as in Item 1C13, the first metallization pattern comprises a separate contact pad.

3C13. In an apparatus as in Item 1C13, the first metallization pattern is directed away from the first outer edge toward the second metallization pattern And includes a first finger.

4C13. In an apparatus as in 3C13, the first metallization pattern further comprises a bus bar that runs along the first outer edge and intersects the first finger.

5C13. In an apparatus as in Item 4C13,

A second finger directed away from the second outer edge toward the first metallization pattern; And

And a second bus bar extending along the second outer edge and intersecting the second finger.

6C13. In an apparatus as in 3C13, the apparatus further comprises an electrically conductive adhesive which is advanced along the first outer edge and is in contact with the first finger.

7C13. In an apparatus as in Item 3C13, the first metallization pattern further comprises a first bypass conductor.

8C13. In the same arrangement as in Item 3C13, the first metallization pattern further comprises a first end conductor.

9C13. In an apparatus as in Item 1C13, the first metallization pattern comprises silver.

10C13. In an apparatus as in Item 9C13, the first metallization pattern comprises a silver paste.

11C13. In an apparatus as in Item 9C13, the first metallization pattern includes separate contacts.

12C13. In an arrangement as in Item 1C13, the first metallization pattern comprises tin, aluminum, or other conductor less expensive than silver.

13C13. In an apparatus as in Item 1C13, the first metallization pattern comprises copper.

14C13. In an apparatus as in Item 13C13, the first metallization pattern comprises electroplated copper.

15C13. In the same arrangement as in Item 13C13, it further includes a passivation scheme to reduce recombination.

16C13. In the same apparatus as in Item 1C13,

A third metallization pattern on a first surface of the semiconductor wafer that is not adjacent to the first outer edge or the second outer edge; And

And a second scribe line between the third metallization pattern and the second metallization pattern, wherein the first scribe line is between the first metallization pattern and the third metallization pattern.

17C13. In an apparatus as in Item 16C13, the ratio of the first width defined between the first scribe line and the second scribe line divided by the length of the semiconductor wafer is from about 1: 2 to about 1:20.

18C13. In the same arrangement as in Item 17C13, the length is about 156 mm or about 125 mm.

19C13. In an apparatus as in Item 17C13, the semiconductor wafer includes chamfered edges.

20C13. In the same device as in Item 19C13,

Wherein the first scribe line is defined as the first outer edge, the first rectangular area comprises two chamfered edges and the first metallization pattern, the first rectangular area having a length of product Having a corresponding area and a second width greater than the combined area of the first width minus the two chamfered edges;

Wherein the second scribe line is defined by the first scribe line, the second rectangular area comprises the third metallization pattern without chamfered edges, and the second rectangular area comprises the product of the length And an area corresponding to the first width.

21C13. In an apparatus as in Item 16C13, the third metallization pattern comprises a finger facing the second metallization pattern.

22C13. The apparatus of claim 1 further comprising a third metallization pattern on a second surface of the semiconductor wafer opposite the first surface.

23C13. In an apparatus as in Item 22C13, the third metallization pattern includes contact pads proximate to the location of the first scribe line.

24C13. In an apparatus as in Item 1C13, the first scribe line is formed by a laser.

25C13. In an apparatus as in Item 1C13, the first scribe line is in the first surface.

26C13. In an apparatus as in Item 1C13, the first metallization pattern includes features configured to limit the diffusion of the electrically conductive adhesive.

27C13. In the same arrangement as in Item 26C13, the features include protruding features.

28C13. In an apparatus as in Item 27C13, the first metallization pattern comprises a contact pad, the feature being adjacent to the contact pad and including a larger dam.

29C13. In the same arrangement as in Item 26C13, the feature includes the recessed feature.

30C13. In the same arrangement as in Item 29C13, the recessed feature includes a motor.

31C13. In an apparatus as in Item 26C13, the apparatus further comprises the electrically conductive adhesive contacting the first metallization pattern.

32C13. In the same apparatus as in Item 31C13, the electrically conductive adhesive is printed.

33C13. In an apparatus as in Item 1C13, the semiconductor wafer comprises silicon.

34C13. In an apparatus as in Item 33C13, the semiconductor wafer comprises crystalline silicon.

35C13. In an apparatus as in Item 33C13, said first surface is an n-type conductivity type.

36C13. In an apparatus as in Item 33C13, said first surface is a p-type conductivity type.

37C13. In the same apparatus as in Item 1C13,

The first metallization pattern is 5 mm or less from the first outer edge;

The second metallization pattern is 5 mm or less from the second outer edge.

38C13. In an apparatus as in Item 1C13, the semiconductor wafer includes chamfered edges, the first metallization pattern including a tapered portion extending around chamfered edges.

39C13. In the same arrangement as in Item 38C13, the tapered portion includes a bus bar.

40C13. In the same arrangement as in Item 38C13, the tapered portion includes a conductor connecting a separate contact pad.

1C14. Way,

Scribing a first scribe line on the wafer; And

And separating the wafer along the first scribe line utilizing a vacuum to provide a solar cell strip.

2C14. In the same method as in Item 1C14, the step of scraping includes laser scribing.

3C14. In a method as in 2C14, said separating comprises applying said vacuum between the surface of the wafer and the surface of the curve.

4C14. In the same way as in Item 3C14, the surface of the curve includes a vacuum manifold.

5C14. In a method as in 4C14, the wafer is supported on a moving belt to the vacuum manifold, and the vacuum is applied through the belt.

6C14. In the same method as in item 5C14,

Orienting the first scribe line at an angle relative to the vacuum manifold; And

And starting cutting at one end of the first scribe line.

7C14. In the same manner as in item 6C14, the angle is substantially perpendicular.

8C14. In the same manner as in Item 6C14, the angle is an angle other than substantially perpendicular.

9C14. The method further comprises the step of applying an uncured, electrically conductive adhesive bond material in the same manner as in item 3C14.

10C14. In a method as in 9C14, the first scribe line and the uncured, electrically conductive adhesive bond material are on the same surface of the wafer.

11C14. In a method as in 10C14, the laser scribing is performed by selecting a distance between the laser output and / or the first scribe line and the uncured conductive adhesive bond material, thereby forming the un-cured conductive adhesive bond material Lt; / RTI &gt;

12C14. In the same manner as in 10C14, the same surface is opposed to the wafer surface supported by the belt which moves the wafer to the surface of the curve.

13C14. In the same manner as in item 12C14, the surface of the curve includes a vacuum manifold.

14C14. In a method as in 9C14, the applying step occurs after the scraping step.

15C14. In a method as in 9C14, said applying step occurs after said separating step.

16C14. In a method as in 9C14, the applying step comprises screen printing.

17C14. In a method as in 9C14, the applying step comprises ink jet printing.

18C14. In a method as in 9C14, said applying step comprises depositing using a mask.

19C14. In the same manner as in item 3C14, the first scribe line is,

A first metallization pattern on the surface of the wafer along a first outer edge and

And between the second metallization pattern on the surface of the wafer along the second outer edge.

20C14. The method of claim 19C14, wherein the wafer further comprises a third metallization pattern on a surface of the semiconductor wafer that is not adjacent to the first outer edge and the second outer edge,

Scribing a second scribe line between the third metallization pattern and the second metallization pattern such that the first scribe line is between the first metallization pattern and the third metallization pattern; And

And separating the wafer along the second scribe line to provide another solar cell strip.

21C14. In a method as in Item 20C14, the distance between the first scribe line and the second scribe line defines an aspect ratio of about 1: 2 to about 1:20 in length of the wafer having about 125 mm or about 156 mm Width.

22C14. In a method as in 19C14, the first metallization pattern comprises a finger facing the second metallization pattern.

23C14. In a method as in Item 22C14, the first metallization pattern further comprises a bus bar that intersects the finger.

24C14. In the same manner as in item 23C14, the bus bar is within 5 mm of the first outer edge.

25C14. In the same manner as in item 22C14, it further comprises an un-cured electrically conductive adhesive bond material in contact with said finger.

26C14. In the same manner as in item 19C14, the first metallization pattern comprises a separate contact pad.

27C14. The method further comprises printing or electroplating the first metallization pattern on the wafer in the same manner as in item 19C14.

28C14. In the same way as in Item 3,

Further comprising arranging the solar cell strip in a first supercell comprising at least nineteen solar cell strips each having a breakdown voltage of at least 10V, the long sides of the adjacent solar cell strips Overlapping the conductive adhesive bond material;

Further comprising the step of curing the electrically conductive coupling material to couple adjacent and overlapping solar cell strips electrically connected in series.

29C14. In a method as in 28 C14, the arranging step comprises forming a stratified structure comprising an encapsulant, the method further comprising the step of laminating the stratified structure.

30C14. In the same manner as in Item 29C14, the curing occurs at least partially during the laminating step.

31C14. In the same manner as in Item 29C14, the curing takes place separately from the laminating step.

32C14. In the same manner as in Item 29C14, the encapsulant comprises a thermoplastic olefin polymer.

33C14. In the same manner as in Item 29C14, the above-

White backing sheet; And

And darkened stripes on the white backing sheet.

34C14. In the same manner as in Item 28C14, the arranging step includes the step of limiting the diffusion of the electrically conductive adhesive bond material using metallization pattern features.

35C14. In the same way as in Item 34C14, the metallization pattern feature is on the front side of the solar cell strip.

36C14. In the same way as in Item 34C14, the metallization pattern feature is on the back side of the solar cell strip.

37C14. 28. A method as in 28C14, further comprising applying an electrically conductive adhesive bond material between the interconnects directly connecting the first supercell and the second supercell.

38C14. 28. The method of claim 28, further comprising forming a ribbon conductor between the first supercell and a single bypass diode, wherein the single bypass diode is connected to a second junction box of the second solar module Is located in the first junction box of the first solar module, which is the matched arrangement.

39C14. In the same way as in Item 28C14,

The solar cell strip comprising a first chamfered edge;

Wherein the long side of the overlapping solar cell strip of the plurality of solar cell strips does not include a second chamfered edge;

The width of the solar cell strip is greater than the width of the overlapping solar cell strip so that the solar cell strip and the overlapping solar cell strips have approximately the same area.

40C14. In the same way as in Item 28C14,

The solar cell strip comprising a first chamfered edge;

Wherein the long side of the overlapping solar cell strip of the plurality of solar cell strips comprises a second chamfered edge;

The long side of the overlapping solar cell strip of the plurality of solar cell strips overlaps the long side of the solar cell strip that does not include the first chamfered edge.

1C15. Way,

Forming a first metallization pattern along a first outer edge of a first surface of the semiconductor wafer;

Forming a second metallization pattern along a second outer edge of the first surface, the second outer edge being opposite the first outer edge;

And forming a first scribe line between the first metallization pattern and the second metallization pattern.

2C15. In the same way as in Item 1C15,

The first metallization pattern comprising a first finger facing the second metallization pattern;

The second metallization pattern includes a second finger facing the first metallization pattern.

3C15. In the same way as in Item 2C15,

The first metallization pattern further comprising a first bus bar intersecting the first finger and located within 5 mm of the first outer edge;

The second metallization pattern includes a second bus bar intersecting the second finger and located within 5 mm of the second outer edge.

4C15. In the same way as in Item 3C15,

Further comprising forming a third metallization pattern on the first surface that does not follow the first outer edge or does not follow the second outer edge,

A third bus bar parallel to the first bus bar,

A third finger facing the second metallization pattern;

Further comprising forming a second scribe line between the third metallization pattern and the second metallization pattern, wherein the first scribe line is between the first metallization pattern and the third metallization pattern .

5C15. In a method as in Item 4C15, the first scribe line and the second scribe line are separated by a width having a ratio to the length of the semiconductor wafer of about 1: 2 to about 1:20.

6C15. In the same manner as in item 5C15, the length of the semiconductor wafer is about 156 mm or about 125 mm.

7C15. In a method as in Item 4C15, the semiconductor wafer includes chamfered edges.

8C15. In the same way as in Item 7C15,

Wherein the first scribe line is defined as a first outer edge, the first solar cell region comprises two chamfered edges and the first metallization pattern, the first solar cell region having a length of the semiconductor wafer Having a first area corresponding to the product and a combined area of the first width minus the two chamfered edges;

Wherein the second scribe line is defined as the first scribe line, the second solar cell region comprises the third metallization pattern without chamfered edges, and the second solar cell region comprises the product of the length And a second width that is narrower than the first width, and the first area and the second area are substantially the same.

9C15. In the same manner as in Item 8C15, the length is about 156 mm or about 125 mm.

10C15. In a method as in Item 4C15, the step of forming the first scribe line and the step of forming the second scribe line include laser scribing.

11C15. In a method as in Item 4C15, the step of forming the first metallization pattern, the step of forming the second metallization pattern, and the step of forming the third metallization pattern include printing.

12C15. In a method as in Item 11C15, forming the first metallization pattern, forming the second metallization pattern, and forming the third metallization pattern comprise screen printing.

13C15. In a method as in Item 11C15, the step of forming the first metallization pattern comprises forming a plurality of contact pads comprising silver.

14C15. In a method as in Item 4C15, the step of forming the first metallization pattern, the step of forming the second metallization pattern, and the step of forming the third metallization pattern include electroplating.

15C15. In a method as in Item 14C15, the first metallization pattern, the second metallization pattern and the third metallization pattern comprise copper.

16C15. In a method as in Item 4C15, the first metallization pattern comprises aluminum, tin, silver, copper and / or a conductor, which is less expensive than silver.

17C15. In a method as in Item 4C15, the semiconductor wafer comprises silicon.

18C15. In a method as in Item 17C15, the semiconductor wafer comprises crystalline silicon.

19C15. The method as in 4C15 further comprises forming a fourth metallization pattern on the second surface of the semiconductor wafer between 5 mm of the positions of the first outer edge and the second scribe line.

20C15. In a method as in Item 4C15, the first surface has a first conductivity type and the second surface has a second conductivity type opposite to the first conductivity type.

21C15. In a method as in Item 4C15, the fourth metallization pattern comprises a contact pad.

22C15. In a method as in Item 3C15, the method further comprises the step of applying a conductive adhesive to the semiconductor wafer.

23C15. In a method as in Item 22C15, the method further comprises the step of applying the conductive adhesive in contact with the first finger.

24C15. In the method as in Item 23C15, the step of applying the conductive adhesive includes a step of depositing using screen printing or a mask.

25C15. The method as in 3C15 further comprises separating the semiconductor wafer along the first scribe line to form a first solar cell strip comprising the first metallization pattern.

26C15. In a method as in Item 25C15, said separating comprises applying a vacuum to said first scribe line.

27C15. 26. A method as in 26C15, further comprising placing the semiconductor wafer on a belt moving to the vacuum.

28C15. In a method as in Item 25C15, the method further comprises the step of applying a conductive adhesive to the first solar cell strip.

29C15. In the same way as in Item 25C15,

Further comprising arranging the first solar cell strip in a first supercell comprising at least nineteen solar cell strips each having a breakdown voltage of at least 10V, the long sides of adjacent solar cell strips Overlaps the conductive adhesive to be disposed;

And curing the conductive adhesive to bond adjacent and overlapping solar cell strips electrically connected in series.

30C15. In a method as in Item 29C15, the arranging step comprises forming a stratified structure comprising an encapsulant, the method further comprising the step of laminating the stratified structure.

31C15. In the same manner as in item 30C15, the curing step occurs at least partially during the laminating step.

32C15. In the same manner as in Item 30C15, the curing step is distinguished from the laminating step.

33C15. In the same way as in Item 30C15, the encapsulant comprises a thermoplastic olefin polymer.

34C15. In the same way as in Item 30C15,

White backing sheet; And

And darkened stripes on the white backing sheet.

35C15. In a method as in Item 29C15, the step of arranging includes the step of limiting the diffusion of the conductive adhesive to a metallization pattern feature.

36C15. In the same manner as in Item 35C15, the metallization pattern feature is on the front surface of the first solar cell strip.

37C15. In a method as in Item 29C15, the method further comprises applying the conductive adhesive between an interconnect interconnecting the first supercell and the second supercell in series.

38C15. 29. The method of claim 29, further comprising forming a ribbon conductor between the single bypass diode and the first supercell, wherein the single bypass diode is connected to the second junction box of the second solar module Is located in the first junction box of the first solar module, which is the matched arrangement.

39C15. In the same way as in Item 29C15,

Wherein the first solar cell strip comprises a first chamfered edge;

The long side of the overlapping solar cell strip of the first super cell does not include a second chamfered edge;

The width of the first solar cell strip is greater than the width of the overlapping solar cell strip such that the first solar cell strip and the overlapping solar cell strip have approximately the same area.

40C15. In the same way as in Item 29C15,

Wherein the first solar cell strip comprises a first chamfered edge;

Wherein the long side of the overlapping solar cell strip of the first super cell comprises a second chamfered edge;

The long side of the overlapping solar cell strip overlaps the long side of the first solar cell strip that does not include the first chamfered edge.

1C16. Way,

A second bus bar or row of contact pads arranged parallel and adjacent to a first outer edge of the wafer and a second row of contact pads arranged parallel and adjacent to a second outer edge of the wafer opposite and parallel to the first edge of the wafer Providing a silicon wafer having a front metallization pattern comprising a row of bus bars or contact pads;

And separating the silicon wafer along one or more scribe lines parallel to the first and second outer edges of the wafer to form a plurality of rectangular solar cells, Wherein the rows of second bus bars or contact pads are parallel to the long outer edges of the second one of the rectangular solar cells and the rows of second bus bars or contact pads are parallel to the long outer edges of the second one of the rectangular solar cells And are arranged adjacently;

And arranging the rectangular solar cells in line with long sides of adjacent solar cells that are superimposed and electrically coupled to each other to electrically connect the solar cells in series to form a supercell;

The rows of the first bus bars or contact pads on the first one of the rectangular solar cells are overlapped and electrically connected by the bottom surface of the adjacent rectangular solar cell in the supercell.

2C16. In the same manner as in item 1C16, the row of the second bus bars or contact pads on the second one of the rectangular solar cells is overlapped by the bottom surface of the adjacent rectangular solar cell in the super cell, do.

3C16. In method 1C16, the silicon wafer is a square or pseudo-square silicon wafer.

4C16. In the same manner as in item 3C16, the silicon wafer comprises sides of a length of about 125 mm or a length of about 156 mm.

5C16. In the same manner as in item 3C16, the ratio of the length to the width of each rectangular solar cell is from about 2: 1 to about 20: 1.

6C16. In a method as in Item 1C16, the silicon wafer is a crystalline silicon wafer.

7C16. In a method as in 1C16, the rows of first busbars or contact pads and the rows of second busbars or contact pads are less efficient than the central regions of the silicon wafer, As shown in FIG.

8C16. In a method as in 1C16, the front metallization pattern comprises a first plurality of parallel fingers electrically connected to the rows of first bus bars or contact pads and extending inwardly from a first outer edge of the wafer, And a second plurality of parallel fingers electrically connected to the row of second bus bars or contact pads and extending inwardly from a second outer edge of the wafer.

9C16. The method of claim 1C16, wherein the front metallization pattern comprises at least a third bus bar or contact pad positioned between the rows of first bus bars or contact pads and the second bus bar or rows of contact pads and oriented in parallel And a third plurality of parallel fingers oriented orthogonally and electrically connected to the rows of third bus bars or contact pads, wherein the rows of third bus bars or contact pads are connected to the plurality of rectangular solar cells Parallel to and adjacent to a long outer edge of the third one of the rectangular solar cells after the silicon wafer has been separated to form a plurality of rectangular solar cells.

10C16. In a method as in 1C16, applying a conductive adhesive to the first bus bar or row of contact pads to conductively couple the first rectangular solar cell to an adjacent solar cell.

11C16. In a method as in 10C16, the metallization pattern comprises a barrier configured to limit diffusion of the conductive adhesive.

12C16. In a method as in Item 10C16, the method includes applying the conductive adhesive by screen printing.

13C16. In a method as in Item 10C16, the method includes applying the conductive adhesive by ink jet printing.

14C16. In the same manner as in Item 10C16, the conductive adhesive is applied prior to the formation of the scribe lines in the silicon wafer.

15C16. The method as in 1C16, wherein said step of separating said silicon wafer along said one or more scribe lines further comprises the step of separating said silicon wafer from the bottom surface of said silicon wafer and the support surface of said curve Applying a vacuum, and thereby cutting the silicon wafer along the one or more scribe lines.

16C16. In the same way as in Item 1C16,

Wherein the silicon wafer is a pseudo-square silicon wafer comprising chamfered edges, and after separation of the silicon wafer to form a plurality of rectangular solar cells, one or more of the rectangular solar cells is one of the chamfered edges Or more;

The spacing between the scribe lines is made larger than the width orthogonal to the long axis of the rectangular solar cells including the chamfered edges is greater than the width orthogonal to the long axis of the rectangular solar cells lacked chamfered edges, So that each of the plurality of rectangular solar cells in the supercell has a front surface of substantially the same area exposed to light in the operation of the supercell.

17C16. In the same manner as in item 1C16, arranging the supercell in a stratified structure between a transparent front sheet and a back sheet, and laminating the stratified structure.

18C16. In the same manner as in Item 17C16, the step of laminating the stratified structure comprises curing the conductive adhesive disposed between the adjacent rectangular solar cells in the supercell so as to conductively connect adjacent rectangular solar cells to each other Complete.

19C16. In a method as in point 17C16, the supercell is arranged in the stratified structure in one of two or more parallel rows of supercells, wherein the back sheet is positioned at a position of the gaps between two or more columns of the supercells The white portions of the backsheet are not visible through the gaps between the columns of supersells in the assembled module because they are white sheets that include parallel and darkened stripes with positions and widths corresponding to the widths and widths of the modules.

20C16. In the same manner as in Item 17C16, the front sheet and the back sheet are glass sheets, and the supercell is encapsulated in the thermoplastic olefin layer interposed between the glass sheets.

21C16. In a method as in 1C16, arranging the supercells in a first module comprising a junction box in an arrangement coinciding with a second junction box of a second solar module.

1D. The solar module,

Wherein each of the plurality of supersells comprises a plurality of super cells arranged in two or more parallel rows and each super cell is connected to the long sides of adjacent silicon solar cells which are overlapped and electrically connected to each other to electrically connect the silicon solar cells in series, A plurality of rectangular or substantially rectangular silicon solar cells arranged in a line;

And a first hidden tap contact pad located on a rear surface of the first solar cell located at an intermediate position along a first one of the supercells;

A first electrical interconnect electrically coupled to the first hidden tap contact pad;

The first electrical interconnect has a stress relief feature that accommodates differential thermal expansion between the interconnect and the silicon solar cell to which it is coupled.

2D. A solar cell module comprising: a first solar cell module having a first solar cell module and a second solar cell module module, And the first hidden tap contact pad is electrically connected to the second hidden tab contact pad through the first electrical interconnect.

3D. In both 2D and solar modules, the first electrical interconnect extends across the gap between the first supercell and the second supercell and is conductively coupled to the second hidden tab contact pad.

4D. A second hidden tap contact pad located on the back surface of the second solar cell located at another intermediate position along the first of the supercells in item 1D and in the solar module, And electrically connected by the first and second electrical interconnects parallel to the solar cells located between the first and second hidden tap contact pads And a bypass diode.

5D. In Item 1D and in the photovoltaic module, the first hidden tap contact pad comprises a plurality of hidden tab contact pads arranged on the back surface of the first solar cell in a row running parallel to the long axis of the first solar cell Wherein the first electrical interconnect is conductively coupled to each of the plurality of hidden contacts and substantially traverses the length of the first solar cell along the long axis.

6D. In Item 1D and in the photovoltaic module, the first hidden tap contact pad is located adjacent to the short side of the back surface of the first solar cell, and the first electrical interconnect is located adjacent the short axis of the solar cell, Wherein the back metallization pattern on the first solar cell provides a conduction path for the interconnect having a sheet resistance less than or equal to about 5 ohms per square.

7D. In Item 6D and in a solar module, the sheet resistance is less than or equal to about 2.5 ohms per square.

8D. In Item 6D and in the photovoltaic module, the first interconnect includes two tabs located on opposing sides of the stress relief feature, one of which is connected to the first hidden tab contact pad Conductive.

9D. In Item 8D and in the solar module, the two taps are different lengths.

10D. In Item 1D and in a solar module, the first electrical interconnect includes alignment features that identify a desired alignment with the first hidden tap contact pad.

11D. In Item 1D and in a solar module, the first electrical interconnect includes alignment features that identify the desired alignment of the edges of the first supercell.

12D. In Item 1D and in the photovoltaic module, the photovoltaic modules are arranged in a shingled manner which overlaps another photovoltaic module which is electrically connected in the overlapping region.

13D. The solar module,

A glass front sheet;

A backsheet;

And a plurality of super cells arranged in two or more parallel rows between the glass front sheet and the back sheet, wherein each super cell is superimposed to electrically connect the silicon solar cells electrically in series, A plurality of rectangular or substantially rectangular silicon solar cells arranged in series with the long sides of the adjacent silicon solar cells;

The first flexible electrical interconnect being firmly and electrically coupled to the first of the supercells;

Wherein the flexible conductive bonds between the superposed solar cells are applied to the supercells in a direction parallel to the columns for a temperature range of about -40 [deg.] C to about 100 [deg.] C without damage to the super- Provide mechanical compliance to accommodate discrepancies in thermal expansion between the sheets;

Wherein the rigid conductive connection between the first supercell and the first flexible electrical interconnect is such that the first flexible electrical interconnect is perpendicular to the columns for a temperature range of about -40 [deg.] C to about 180 [deg.] C without damage to the PV module To accommodate the thermal expansion mismatch between the first supercell and the first flexible interconnect.

14D. In Item 13D and in the photovoltaic module, the conductive bonds between the overlapping and adjacent solar cells in the supercell use a conductive adhesive different from the conductive bonds between the supercell and the flexible electrical interconnect.

15D. In Item 14D and in the photovoltaic module, the conductive adhesives can all be cured in the same process step.

16D. In Item 13D and in the photovoltaic module, the conductive bond on one side of at least one solar cell in the supercell uses a different conductive adhesive than the conductive bond on the other side.

17D. In Item 16D and in the solar module, the conductive adhesives can all be cured in the same process step.

18D. In Item 13D and in the photovoltaic module, the conductive bonds between the overlapping and adjacent solar cells accommodate differential motion between each cell and the glass front sheet greater than or equal to about 15 microns.

19D. In Item 13D and in the photovoltaic module, the conductive bonds between the overlapping and adjacent solar cells are greater than or equal to about 1.5 W / (meter rK) and a thickness orthogonal to the solar cells of less than or equal to about 50 microns And has a thermal conductivity orthogonal to the solar cells.

20D. In Item 13D and in a solar module, the first flexible electrical interconnect is resistant to thermal expansion or contraction of the first flexible interconnect greater than or equal to about 40 microns.

21D. In Item 13D and in the photovoltaic module, a portion of the first flexible electrical interconnect that is conductively coupled to the supercell is like a ribbon formed of copper, and the surface of the solar cell to which it is coupled, such as less than about 50 microns, .

22D. In Item 21D and in a solar module, a portion of the first flexible electrical interconnect that is conductively coupled to the supercell is like a ribbon formed of copper and has a surface of the solar cell to which it is coupled less than or equal to about 30 microns .

23D. In Item 21D and in a photovoltaic module, the first flexible electrical interconnect is not coupled to the solar cell, but is made of a conductive copper, which provides a higher conductivity than a portion of the first flexible electrical interconnect that is conductively coupled to the solar cell. &Lt; / RTI &gt;

24D. In Item 21D and in a photovoltaic module, the first flexible electrical interconnect has a width greater than or equal to about 10 mm in the plane of the surface of the solar cell in a direction perpendicular to the flow of current through the interconnect.

25D. In Item 21D and in a solar module, the first flexible electrical interconnect is conductively coupled to a conductor proximate to the solar cell providing a higher conductivity than the first electrical interconnect.

26D. In Item 13D and in the photovoltaic module, the photovoltaic modules are arranged in a shingled manner which overlaps another photovoltaic module which is electrically connected in the overlapping region.

27D. The solar module,

Wherein each of the supersells comprises a plurality of super cells arranged in two or more parallel rows and each super cell is connected to the long sides of adjacent silicon solar cells which are overlapped to electrically connect the silicon solar cells in series, And a plurality of rectangular or substantially rectangular silicon solar cells arranged in a line with the plurality of rectangular or substantially rectangular silicon solar cells;

And a hidden tab contact pad that does not conduct current effective in normal operation located on the back surface of the first solar cell;

Wherein the first solar cell is located at an intermediate position along a first of the supers cells in a first one of the rows of supersells, And is electrically connected in parallel with the second solar cell.

28D. In Item 27D and in a solar module, an electrical interconnect coupled to the hidden tab contact pad and electrically interconnecting the hidden tab contact pad to the second solar cell, the electrical interconnect comprising: And the rear metallization pattern of the first solar cell provides a conductive path to the hidden tab contact pad having a sheet resistance of less than or equal to about 5 ohms per square.

29D. In Item 27D and in a solar module, the plurality of supersells are arranged in three or more columns spanning the width of the solar modules orthogonal to the columns, and the hidden tab contact pads electrically connect the columns of supersells At least one of the hidden tab contact pads being electrically connected to a hidden contact pad on at least one solar cell in each column of the super cells to connect in parallel with at least one of the hidden tab contact pads, The bus connection is connected to a bypass diode or other electronic device.

30D. 27. A solar module comprising: a flexible electrical interconnect electrically coupled to said hidden tab contact pad to enable electrical connection to said second solar cell,

A portion of the flexible electrical interconnect that is conductively coupled to the hidden tab contact pad is like a ribbon formed of copper and has a thickness that is orthogonal to the surface of the solar cell to which it is coupled less than or equal to about 50 microns;

Wherein the conductive connection between the hidden tab contact pad and the flexible electrical interconnect is such that the flexible electrical interconnect is resistant to thermal expansion mismatches between the first solar cell and the flexible interconnect, Allowing the relative movement between the first solar cell and the second solar cell resulting from thermal expansion over a temperature range of about &lt; RTI ID = 0.0 &gt; 180 C. &lt; / RTI &gt;

31D. In Item 27D and in the photovoltaic module, in operation of the photovoltaic module, the first hidden tap contact pad may conduct a current greater than the current generated in any one of the solar cells.

32D. In Item 27D and in the photovoltaic module, the front surface of the first solar cell, which overlies the first hidden tap contact pad, is not occupied by contact pads or any other interconnect features.

33D. In Item 27D and in the photovoltaic module, any area of the front surface of the first solar cell that is not overlapped by a portion of the adjacent solar cells in the first supercell can be replaced by contact pads or any other interconnect features Lt; / RTI &gt;

34D. In Item 27D and in the solar module, most of the cells in each supercell have no hidden tap contact pads.

35D. In Item 34D and in a solar module, cells having the hidden tab contact pads have a larger condensing area than cells having no hidden tab contact pads.

36D. In Item 27D and in the photovoltaic module, the photovoltaic modules are arranged in a shingled manner which overlaps another photovoltaic module which is electrically connected in the overlapping region.

37D. The solar module,

A glass front sheet;

A backsheet;

And a plurality of super cells arranged in two or more parallel rows between the glass front sheet and the rear sheet, wherein each super cell is superimposed to electrically connect the silicon solar cells electrically in series, A plurality of rectangular or substantially rectangular silicon solar cells arranged in series with the long sides of the adjoining silicon solar cells to be combined;

And a first flexible electrical interconnect that is firmly coupled to the first of the supersells in a tightly conductive manner;

Wherein the flexible conductive bonds between the overlapping solar cells are formed of a first conductive adhesive and have a shear modulus less than or equal to about 800 megapascals;

The rigid conductive connection between the first supercell and the first flexible electrical interconnect is formed of a second conductive adhesive and has a shear modulus greater than or equal to about 2000 megapascals.

38D. In the photovoltaic module as in Item 37D, the first conductive adhesive and the second conductive adhesive are different, and the conductive adhesives can all be cured in the same process step.

39D. In a photovoltaic module as in Item 37D, the conductive bonds between the overlapping and adjacent solar cells are less than or equal to about 50 microns and have a thickness perpendicular to the solar cells and greater than about 1.5 W / (meter-K) Or a thermal conductivity that is orthogonal to the solar cells.

40D. In the photovoltaic module as in Item 37D, the photovoltaic modules are arranged in a shingled manner which overlaps another photovoltaic module which is electrically connected in the overlapping region.

1E. The photovoltaic module includes rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 150 arranged as a plurality of supersells in two or more parallel rows, A plurality of silicon solar cells arranged in a line with long sides of adjacent silicon solar cells superimposed and electrically connected to electrically connect in series; The supercells are electrically connected to provide a high DC voltage of greater than or equal to about 90 volts.

2E. In one solar module, such as in 1E, one or more flexible electrical interconnects arranged to electrically connect said plurality of supercells in series to provide said high DC voltage.

3E. In a solar module such as in Item 2E, a module level power electronics having an inverter for converting the high DC voltage to an AC voltage is included.

4E. In a solar module such as in Item 3E, the module level power electronics sense the high DC voltage and operate the module at the optimal current-voltage power point.

5E. In a solar module such as in Item 1E, one or more pairs of columns of the supers cells are electrically connected to respective pairs of adjacent series-connected columns of supersells, And a module level power electronics having an inverter that is connected in series and converts the high DC voltage to an AC voltage.

6E. In a photovoltaic module such as in 5E, the module level power electronics sense the voltage across each individual pair of columns of supersells, and each individual pair of columns of supersells at the optimal current- .

7E. In a photovoltaic module as in Item 6E, the module level power electronics is configured to switch each pair of columns of supersells from a circuit providing the high DC voltage when the voltage across the pair of columns is below a threshold, do.

8E. In a solar module as in Item &lt; RTI ID = 0.0 &gt; 1E, &lt; / RTI &gt; electrically connected to each individual column of supersells and electrically couple two or more of the rows of supersells to provide the high dc voltage, And a module level power electronics having an inverter for converting the voltage to an alternating voltage.

9E. In a photovoltaic module such as in Item 8E, the module level power electronics senses the voltage across each individual column of the supersells and operates each individual column of supersells at the optimal current-voltage power point.

10E. In a photovoltaic module such as in Item 9E, the module level power electronics may switch each pair of columns of supersells from a circuit providing the high dc voltage when the voltage across the pair of columns is below a threshold, do.

11E. In a solar module as in Item &lt; RTI ID = 0.0 &gt; 1E, &lt; / RTI &gt; electrically connected to each individual supercell and electrically connecting two or more of said supercells electrically to provide said high dc voltage, And a module level power electronics having an inverter for converting the voltage to a voltage.

12E. In a solar module such as in 11E, the module level power electronics senses the voltage across each individual supercell and operates each individual supercell at the optimal current-voltage power point.

13E. In a solar module such as in 12E, the module level power electronics switches the individual supercells from the circuit providing the high DC voltage when the voltage across the supercell is below a threshold.

14E. In a solar module such as in Item 1E, each supercell is electrically divided into a plurality of segments by hidden taps, and the solar module is electrically connected to each segment of each supercell via the hidden tabs And a module level power electronics having an inverter for electrically connecting the two or more segments electrically to provide the high DC voltage and converting the high DC voltage to an AC voltage.

15E. In a solar module such as in Item 14E, the module level power electronics senses the voltage across each individual segment of each supercell, and operates each individual segment at the optimal current-voltage power point.

16E. In a solar module such as in 15E, the module level power electronics switches individual segments from the circuit providing the high DC voltage when the voltage across the segment is below a threshold.

17E. In photovoltaic modules such as 4E, 6E, 9E, 12E or 15E, the optimal current-voltage power point is the maximum current-voltage power point.

18E. In a photovoltaic module such as in any of the 3E-17E, the module level power electronics lacks a DC to DC boost component.

19E. In a photovoltaic module as in any of the above items 1E to 18E, N is greater than or equal to about 200, greater than or equal to about 250, greater than or equal to about 300, greater than or equal to about 350, Greater than or equal to about 400, greater than or equal to about 450, greater than or equal to about 500, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, Greater than or equal to.

20E. In a photovoltaic module as in any of the above items 1E-19E, said high direct current voltage is greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, Equal to or greater than about 360 volts, equal to or greater than about 420 volts, equal to or greater than about 480 volts, equal to or greater than about 540 volts, equal to or greater than about 600 volts, .

21E. A solar photovoltaic system,

Two or more solar modules electrically connected in parallel; And

An inverter;

Each solar module comprises rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 150 arranged as a plurality of supers cells in two or more parallel rows, Two or more of said silicon solar cells in said module arranged in line with long sides of adjacent silicon solar cells superimposed to electrically connect solar cells electrically in series and electrically coupled to each other, The super cells being electrically connected to provide a high voltage DC module output greater than or equal to about 90 volts;

The inverter is electrically connected to the two or more solar modules to convert their high voltage direct current output into alternating current.

22E. In the solar cell system of Item 21E, each solar module includes one or more flexible electrical interconnects arranged to electrically connect the supersells in the solar module to provide a high voltage dc output of the solar module .

23E. In the solar cell system according to Item 21E, at least a third solar module connected electrically in series with the first one of the two or more solar modules connected electrically in parallel, Wherein each of the supergels in the third solar module comprises rectangular or substantially rectangular silicon solar cells of number N 'greater than or equal to about 150 arranged as a plurality of supersells in two or more parallel rows, And two or more of the silicon solar cells in the module arranged in series with the long sides of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells electrically in series and electrically connected to each other, Within the optical module, the supercells provide a high-voltage DC module output greater than or equal to about 90 volts As shown in Fig.

24E. And at least a fourth photovoltaic module electrically connected in series with a second one of said two or more photovoltaic modules electrically connected in parallel in a photovoltaic system according to Item 23E, Wherein each of the supergels in the fourth solar module comprises rectangular or substantially rectangular silicon solar cells with a number N " greater than or equal to about 150 arranged as a plurality of supersells in two or more parallel rows, And two or more of the silicon solar cells in the module arranged in series with the long sides of adjacent silicon solar cells superposed and electrically coupled to each other to electrically connect the silicon solar cells in series, Within the optical module, the supercells provide a high-voltage DC module output greater than or equal to about 90 volts As shown in Fig.

25E. Item 21E - In the solar system of Item 24E, fuses are arranged to prevent a short circuit within any of the solar modules from dissipating power generated in other solar modules.

26E. In a photovoltaic system of any of items 21E-25E, a short circuit that occurs within any of the solar modules is arranged to prevent the power generated in the others of the solar modules from dissipating Lt; / RTI &gt;

27E. In the photovoltaic system of any of the items 21E-26E, two or more solar modules are connected electrically in parallel, and the positive and negative buses in which the inverter is electrically connected.

* 28E. In a solar power generation system of any of items 21E-26E, a combiner box in which the two or more solar modules are electrically connected by a separate conductor, the combiner box being electrically connected to the solar modules In parallel.

29E. In the photovoltaic system of Item 28E, the combiner box includes fuses arranged to prevent short circuiting within any of the photovoltaic modules from dissipating power generated in other photovoltaic modules.

30E. In the photovoltaic system of matter 28E or 29E, the combiner box is arranged to prevent short circuiting within any of the photovoltaic modules from dissipating power generated in the others of the photovoltaic modules Blocking diodes.

31E. In the photovoltaic system of any of items 21E-30E, the inverter is configured to operate the solar modules at a DC voltage above a minimum value set to avoid reverse biasing the module.

32E. In a photovoltaic system of any of items 21E-30E, the inverter is configured to recognize reverse bias conditions and to operate the solar modules at a voltage that avoids the reverse bias condition.

33E. In the photovoltaic module of any of Item 21E-Item 32E, N is greater than or equal to about 200, greater than or equal to about 250, greater than or equal to about 300, greater than or equal to about 350, or less than or equal to about 400 Greater than or equal to about 450, greater than or equal to about 450, greater than or equal to about 500, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, Or the same.

34E. In the photovoltaic module of any of Item 21E-Item 33E, said high direct current voltage is greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, or less than or equal to about 300 volts Greater than or equal to about 360 volts, greater than or equal to about 420 volts, greater than or equal to about 480 volts, greater than or equal to about 540 volts, or greater than or equal to about 600 volts.

35E. In the photovoltaic system of any of the items 21E-Item 34E, it is located at the roof top.

36E. The solar power generation system,

A first solar module comprising rectangular or substantially rectangular silicon solar cells of number N greater than or equal to about 150 arranged as a plurality of supersells in two or more parallel rows, A plurality of silicon solar cells arranged in a line with long sides of adjacent silicon solar cells superimposed to electrically connect the silicon solar cells in series and electrically connected to each other;

An inverter;

The supercells are electrically connected to provide a high DC voltage of greater than or equal to about 90 volts to the inverter that converts DC to AC.

37E. In the solar power generation system of Item 36E, the inverter is a micro inverter integrated with the first solar module.

38E. In the solar cell system of Item 36E, the first solar module comprises one or more flexible electrical components arranged to be electrically connected in series to the super cells in the solar module to provide a high voltage direct current output of the solar module Interconnects.

39E. 36. A solar power generation system of any of the claims 36E-38E, comprising at least a second solar module electrically connected in series to said first solar module, said second solar module comprising two or more parallel Wherein each of the super cells in the second solar module has a number N 'of rectangular or substantially rectangular silicon solar cells of greater than or equal to about 150 arranged as a plurality of supersells in a row, And two or more of the silicon solar cells in the module arranged in series with long sides of adjacent silicon solar cells superimposed to be connected in series to each other and electrically coupled to each other, The supercells are electrically connected to provide a high-voltage DC module output greater than or equal to about 90 volts.

40E. In the photovoltaic module of any of items 36E-39E, the inverter lacks a DC to DC boost component.

41E. In the photovoltaic module of any of Item 36E-Item 40E, N is greater than or equal to about 200, greater than or equal to about 250, greater than or equal to about 300, greater than or equal to about 350, or less than or equal to about 400 Greater than or equal to about 450, greater than or equal to about 450, greater than or equal to about 500, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, Or the same.

42E. In the photovoltaic module of any of items 36E-41E, the high DC voltage is greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, or greater than about 300 volts Equal to or greater than about 360 volts, equal to or greater than about 420 volts, equal to or greater than about 480 volts, equal to or greater than about 540 volts, or equal to or greater than about 600 volts.

43E. The solar module,

Wherein each of the super cells comprises a silicon solar cell having a number N of greater than or equal to about 250 and arranged in a plurality of serially connected super cells in two or more parallel rows, And a plurality of silicon solar cells arranged in series with the long sides of adjacent silicon solar cells superimposed to electrically connect the first and second silicon solar cells to each other and electrically coupled to each other with an electrically and thermally conductive adhesive;

One or less bypass diodes per 25 solar cells;

Wherein the electrically and thermally conductive adhesive is applied to adjacent solar cells with a thickness that is less than or equal to about 50 microns and that is perpendicular to the solar cells and greater than or equal to about 1.5 W / Thereby forming bonds having an orthogonal thermal conductivity.

44E. In the solar module of Item 43E, the supercells are encapsulated within the thermoplastic olefin layer between the front and back sheets.

45E. In the solar module of Item 43E, the supercells are encapsulated between the front and back sheets.

46E. In the 43E solar module, no more than one bypass diode per thirty solar cells, no more than one bypass diode per 50 solar cells, or less than one bypass diode per 100 solar cells, or It includes only a single bypass diode, or does not include a bypass diode.

47E. In photovoltaic module 43E, bypass diodes that do not include bypass diodes, only a single bypass diode, or three sets of bypass diodes, or bypass diodes that do not exceed six, Lt; / RTI &gt;

48E. In the solar module of Item 43E, the conductive bonds between the overlapping solar cells are applied to the super cells in a direction parallel to the columns for a temperature range of about -40 DEG C to about 100 DEG C without damage to the solar module And provides mechanical compliance to accommodate thermal expansion mismatches between the supercells and the glass front sheet.

49E. In the photovoltaic module of any of Item 43E-Item 48E, N is greater than or equal to about 300, greater than or equal to about 350, greater than or equal to about 400, greater than or equal to about 450, or less than or equal to about 500 Greater than or equal to about 550, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, and greater than or equal to about 700.

50E. In a solar module of any of Item 43E-Item 49E, the supercells are greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, or greater than about 300 volts Or greater, greater than or equal to about 360 volts, greater than or equal to about 420 volts, greater than or equal to about 480 volts, greater than or equal to about 540 volts, or greater than or equal to about 600 volts As shown in Fig.

51E. The solar energy system,

43E solar modules; And

And an inverter electrically connected to the solar module and configured to convert the DC output from the solar module to provide an AC output.

52E. In the solar system of item 51E, the inverter lacks a DC to DC boost component.

53E. In the solar system of item 51E, the inverter is configured to operate the solar module at a DC voltage above a minimum set to avoid reverse biasing the solar cell.

54E. In the solar energy system of Item 53E, the minimum voltage value is temperature dependent.

55E. In the solar system of item 51E, the inverter is configured to recognize the reverse bias condition and operate the solar module at a voltage that avoids the reverse bias condition.

56E. In the solar system of matter 55E, the inverter is configured to operate the solar module in a maximum area of the voltage-current output curve of the solar module to avoid the reverse bias condition.

57E. In the solar energy system of any of items 51E-56E, the inverter is a micro-inverter integrated with the solar module.

1F. A method of manufacturing solar cells, the method comprising:

Advancing a solar cell wafer along the surface of the curve; And

Applying a vacuum between the surface of the curved line and the bottom surface of the solar cell wafer to bend the solar cell wafer against the surface of the curved line so as to separate a plurality of solar cells from the solar cell wafer And cutting the solar cell wafer along prepared scribe lines.

2F. In the method of Item 1F, this is the curved portion of the upper surface of the vacuum manifold applying the vacuum to the bottom surface of the solar cell wafer.

3F. In the method of Item 2F, the vacuum applied to the bottom surface of the solar cell wafer by the vacuum manifold is changed along the direction of advancement of the solar cell wafer, and the vacuum in the region of the vacuum manifold where the solar cell wafer is cut It becomes strong.

4F. The method of claim 2F or 3F, comprising transferring the solar cell wafer along a top surface of a curve of the vacuum manifold with a perforated belt, the vacuum being directed through the perforations in the perforated belt And is applied to the bottom surface of the wafer.

5F. In the method of Item 4F, the perforations in the belt are arranged such that the leading and trailing edges of the solar cell wafer are placed on at least one perforation in the belt along the direction of the solar cell wafer.

6F. A method as claimed in any of the claims 2 to 5, characterized in that the solar cell wafer is advanced along a flat area of the upper surface of the vacuum manifold so as to reach the transition region of the curve of the upper surface of the vacuum manifold with the first curvature And then advancing the solar cell wafer into a cut-off region of the upper surface of the vacuum manifold where the solar cell wafer is cut, wherein the cut-off region of the vacuum manifold comprises a second Curvature.

7F. In the method of Item 6F, the curvature of the transition region is defined by a continuous geometric function of increasing curvature.

8F. In the method of Item 7F, the curvature of the cut region is defined by a continuous geometric function of increasing curvature.

9F. In the method of 6F, advancing into a post-cut region of the vacuum manifold having a third curvature that is steeper than the second curvature.

10F. In the method of Item 9F, the curvatures of the transition region, the truncation region and the truncated region of the curve are defined by a continuous geometric function of increasing curvature.

11F. In the method of Item 7F, Item 8F, or Item 10F, the successive geometric function of the increasing curvature is a clothoid.

12F. In the method of any of items 1F to 11F, the angle of each of the scribe lines, rather than the opposite ends of each scribe line, is varied to provide an asymmetric stress distribution along each scribe line that promotes the creation and propagation of a single, And applying a stronger vacuum between one end of the scribe line and the surface of the solar cell wafer and the curve.

13F. 12. The method of any of claims 1 to 12 wherein the edges of the cut solar cells are removed prior to removal of the solar cells from the surface of the curve .

14F. In the method of any of items 1F-13F,

Laser scribing on the solar cell wafer; And

Applying an electrically conductive adhesive bonding material to portions of the top surface of the solar cell wafer prior to cutting the solar cell wafer along the scribe lines;

Each cut solar cell includes a portion of the electrically conductive adhesive bond material disposed along the cut edge of the top surface thereof.

15F. The method of Item 14F, comprising laser scribing the scribe lines and then applying the electrically conductive adhesive bond material.

16F. The method of Item 14F, comprising applying the electrically conductive adhesive bond material, and thereafter laser scribing the scribe lines.

17F. A method of making a string of photovoltaic cells from cut solar cells produced by the method of any of claims 14F-16F, wherein the cut solar cells are rectangular,

Arranging the plurality of rectangular solar cells in line with long sides of adjoining rectangular solar cells overlapping in a shingled manner as part of the electrically conductive adhesive bonding material disposed therebetween; And

Curing the electrically conductive binding material to couple adjacent and overlapping rectangular solar cells and connecting them electrically in series.

18F. In a method of any of the above 1F-detail 17F, the solar cell wafer is a square or pseudo-square silicon solar cell wafer.

1G. A method of making a string of batteries, the method comprising:

Forming a rear metallization pattern on each of the one or more square solar cells;

Stencil printing a complete front metallization pattern using a single stencil in a single stencil printing step on each of said one or more square solar cells;

Each square solar cell is divided into two or more rectangular solar cells so as to form a plurality of rectangular solar cells each having a complete front metallization pattern and a rear metallization pattern from the one or more square solar cells Separating;

Arranging the plurality of rectangular solar cells in line with long sides of overlapping adjacent solar cells in a shingled manner; And

The rectangular-shaped solar cells in each pair of adjacent and overlapping rectangular solar cells can be electrically connected to the rear-side metallization pattern of the other one of the rectangular solar cells in the pair by electrically connecting one frontal metallization pattern of the rectangular- And electrically connecting the plurality of rectangular solar cells electrically in series with each other with an electrically conductive bonding material disposed between them so as to connect the plurality of rectangular solar cells.

2G. The method of any one of the preceding claims, wherein all portions of the stencil defining one or more features of the front metallization pattern on the one or more square solar cells are placed in the plane of the stencil during stencil printing, Lt; / RTI &gt; is limited by the physical connections to the parts.

3G. The method of claim 1G, wherein said front metallization pattern on each rectangular solar cell comprises a plurality of fingers oriented orthogonally to long sides of said rectangular solar cell, said fingers in said front metallization pattern They are not physically connected to each other by the metallization pattern.

4G. In method 3G, the fingers have widths from about 10 microns to about 90 microns.

5G. In method 3G, the fingers have widths from about 10 microns to about 50 microns.

6G. In method 3G, the fingers have widths from about 10 microns to about 30 microns.

7G. In method 3G, the fingers have heights that are orthogonal to the front surface of the rectangular solar cell of about 10 microns to about 50 microns.

8G. In the method of 3G, the fingers have heights that are orthogonal to the front surface of the rectangular solar cell of about 30 microns or more.

9G. Wherein in the method of 3G, the front metallization pattern on each rectangular solar cell comprises a plurality of contact pads parallel to and adjacent to the edge of the long side of the rectangular solar cell, each contact pad having an end .

10G. In the method of 3G, the rear metallization pattern on each rectangular solar cell comprises a plurality of contact pads arranged in rows parallel to and adjacent to the edge of the long side of the rectangular solar cell, wherein adjacent, overlapping rectangles Each pair of solar cells being electrically connected to corresponding fingers in a front metallization pattern on another of the rectangular solar cells in the pair, wherein each of the rear contact pads on one of the pair of rectangular solar cells .

11G. In the method of 3G, the rear metallization pattern on each rectangular solar cell includes a bus bar running parallel to and adjacent to the edge of the long side of the rectangular solar cell, and the angle of the adjacent, overlapping rectangular solar cells The pair is arranged in a bus bar on one of a pair of rectangular solar cells that overlap and are electrically connected with the fingers in the front metallization pattern on the other of the rectangular solar cells in the pair.

12G. In the method of 3G,

Wherein said front metallization pattern on each rectangular solar cell comprises a plurality of contact pads arranged in parallel and adjacent to an edge of a long side of said rectangular solar cell, each contact pad being located at an end of a corresponding finger;

Wherein said rear metallization pattern on each rectangular solar cell comprises a plurality of contact pads arranged in adjacent rows parallel to an edge of a long side of said rectangular solar cell;

Each pair of adjacent and overlapping rectangular solar cells is electrically connected and overlapped with the contact pads in the front metallization pattern on the other rectangular solar cells in the pair, And are arranged with contact pads.

13G. In method 12G, the rectangular solar cells in each pair of adjacent and overlapping rectangular solar cells are separated by separate portions of the electrically conductive coupling material disposed between the overlapping front and back contact pads And are coupled to each other in a conductive manner.

14G. In the method of 3G, the rectangular solar cells in each pair of adjacent and overlapping rectangular solar cells are arranged such that one front metallization pattern of the pair of rectangular solar cells and another one of the pair of rectangular solar cells Are electrically coupled to each other by separate portions of the electrically conductive bonding material between the overlapping ends of the fingers in the back metallization pattern.

15G. In the method of 3G, the rectangular solar cells in each pair of adjacent and overlapping rectangular solar cells are arranged such that one front metallization pattern of the pair of rectangular solar cells and another one of the pair of rectangular solar cells Wherein a dashed or continuous line of electrically conductive bonding material is coupled to each other by the dashed or continuous lines of electrically conductive bonding material between the overlapping ends of the fingers in the back metallization pattern, One or more of which are electrically interconnected.

16G. In the method of 3G,

Wherein said front metallization pattern on each rectangular solar cell comprises a plurality of contact pads arranged in parallel and adjacent to an edge of a long side of said rectangular solar cell, each contact pad being located at an end of a corresponding finger;

Wherein said rectangular solar cells in each pair of adjacent, overlapping rectangular solar cells are arranged in one of a front metallization pattern of said pair of rectangular solar cells and of said pair of said rectangular solar cells, Are electrically coupled to each other by separate portions of electrically conductive bonding material disposed between the contact pads.

17G. In the method of 3G,

Wherein said front metallization pattern on each rectangular solar cell comprises a plurality of contact pads arranged in parallel and adjacent to an edge of a long side of said rectangular solar cell, each contact pad being located at an end of a corresponding finger;

The rectangular solar cells in each pair of adjacent and overlapping rectangular solar cells are connected to one of the front metallization patterns of the pair of rectangular solar cells and the other of the contacts in the rear metallization pattern of the other pair of rectangular solar cells Wherein the dashed or continuous lines of the electrically conductive bonding material are electrically coupled to each other by the dashed or continuous lines of the electrically conductive bonding material between the pads, Connect.

18G. In a method of any of the items 1G-Item 17G, the front metallization pattern is formed of a silver paste.

1H. A method of manufacturing a plurality of solar cells, the method comprising:

Depositing one or more front amorphous silicon layers on a front surface of a crystalline silicon wafer, wherein the front amorphous silicon layers are illuminated by light in the operation of the solar cells;

Depositing one or more rear amorphous silicon layers on the back side of the crystalline silicon wafer on the opposite side of the crystalline silicon wafer from the front side;

Patterning the one or more front amorphous silicon layers to form one or more front trenches in the one or more front amorphous silicon layers;

Depositing a front passivation layer over the one or more front amorphous silicon layers and the front trenches;

Patterning the one or more backside amorphous silicon layers to form one or more backside trenches in the one or more backside amorphous silicon layers, Lt; RTI ID = 0.0 &gt; a &lt; / RTI &gt;

Depositing a backside passivation layer over the one or more rear amorphous silicon layers and the backside trenches;

Cutting the crystalline silicon wafer in one or more cleavage planes, wherein each cutting plane is centered or substantially centered on the other pair of corresponding front and back trenches.

2H. The method of claim 1, comprising forming the one or more front trenches through the front amorphous silicon layers to reach the front side of the crystalline silicon wafer.

3H. The method of claim 1, comprising forming the one or more rear trenches through the one or more rear amorphous silicon layers to reach the back surface of the crystalline silicon wafer.

4H. The method of claim 1, comprising forming the front passivation layer and the back passivation layer with a transparent conductive oxide.

5H. The method of Claim 1, comprising using a laser to induce heat stress in the crystalline silicon wafer to cut the crystalline silicon wafer at the one or more cutting planes.

6H. The method of claim 1, comprising mechanically cutting said crystalline silicon wafer at said one or more cutting planes.

7H. The method of claim 1 wherein said one or more front amorphous crystalline silicon layers form an n-p junction with said crystalline silicon wafer.

8H. In the method of Item 7H, cutting the crystalline silicon wafer from its back side.

9H. The method of claim 1, wherein said one or more rear amorphous crystalline silicon layers form an n-p junction with said crystalline silicon wafer.

10H. The method according to Item 9H, comprising cutting the crystalline silicon wafer from the front side thereof.

11H. A method of manufacturing a plurality of solar cells, the method comprising:

Forming one or more trenches in the first surface of the crystalline silicon wafer;

Depositing one or more amorphous silicon layers on the first surface of the crystalline silicon wafer;

Depositing a passivation layer within the trenches and on one or more amorphous silicon layers on the first surface of the crystalline silicon wafer;

Depositing one or more amorphous silicon layers on the second surface of the crystalline silicon wafer on opposite edges of the crystalline silicon wafer from the first surface; And

Cutting the crystalline silicon wafer at one or more cutting planes, wherein each cutting plane is centered or substantially centered on the other of the one or more trenches.

12H. The method according to Item 11H, comprising the step of forming the passivation layer with a transparent conductive material.

13H. The method of claim 11H, comprising using a laser to induce heat stress in the crystalline silicon wafer to cut the crystalline silicon wafer at the one or more cutting planes.

14H. The method of Item 11H, comprising mechanically cutting the crystalline silicon wafer at the one or more cutting planes.

15H. In method 11H, said one or more first surface amorphous crystalline silicon layers form an n-p junction with said crystalline silicon wafer.

16H. In method 11H, said one or more second surface amorphous crystalline silicon layers form an n-p junction with said crystalline silicon wafer.

17H. In method 11H, the first surface of the crystalline silicon wafer is illuminated by light in the operation of the solar cells.

18H. In method 11H, the second surface of the crystalline silicon wafer is illuminated by light in the operation of the solar cells.

19H. A solar panel,

Each of the supercells includes a plurality of solar cells arranged in a line with neighboring portions of adjacent solar cells superimposed in a shingled manner and electrically connected to each other so as to electrically connect the solar cells in series, ;

Each solar cell comprising a crystalline silicon base, one or more first surface amorphous silicon layers disposed on a first surface of the crystalline silicon base to form an np junction, One or more second surface amorphous silicon layers disposed on a second surface of the crystalline silicon base on opposing sides and edges of the first surface amorphous silicon layers and edges of the second surface amorphous silicon layers, Or passivation layers to prevent charge recombination at the edges of the first surface amorphous silicon layers and at the edges of the second surface amorphous silicon layers.

20H. In the 19H solar panel, the passivation layers comprise a transparent conductive oxide.

21H. In the solar panel of Item 19H, the supercells are arranged in a single row or two or more parallel rows to form a front surface of the solar cell panel that is illuminated by solar radiation during operation of the solar cell panel.

Z1. The solar module,

Wherein each of the super cells comprises a silicon solar cell having a number N of greater than or equal to about 250 and arranged in a plurality of serially connected super cells in two or more parallel rows, And a plurality of silicon solar cells stacked in series with the long sides of adjacent silicon solar cells superimposed to electrically connect in series and electrically and thermally conductive to each other with an adhesive electrically conductive to each other;

One or more bypass diodes;

Wherein each pair of adjacent parallel rows in the solar module is conductively coupled to a backside electrical contact on a solar cell positioned centrally in one row of the pair and the pair of adjacent solar cells in the other row of the pair And is electrically connected by a bypass diode that is conductively coupled to the backside electrical contact.

Z2. In a photovoltaic module of matter Z1, each pair of adjacent parallel rows is conductively coupled to a backside electrical contact on the solar cell in the other row of the pair, and on the adjacent solar cell in the other row of the pair And is electrically connected by at least one other bypass diode that is conductively coupled to the backside electrical contact.

Z3. In a solar module of matter Z2, each pair of adjacent parallel rows is conductively coupled to a backside electrical contact on the solar cell in the other row of the pair, and the pair of adjacent solar cells in the other row And is electrically connected by at least one other bypass diode that is conductively coupled to the backside electrical contact.

Z4. In the photovoltaic module of matter Z1, the electrically and thermally conductive adhesive has a thickness of less than or equal to about 50 microns between adjacent solar cells and a thickness of less than about 1.5 W / (meter-K) Thereby forming bonds having a thermal conductivity that is orthogonal to the solar cells.

Z5. In the solar module of matter Z1, the supercells are encapsulated in a thermoplastic olefin layer between the front and back glass sheets.

Z6. In the photovoltaic module of matter Z1, the conductive bonds between the overlapping solar cells are deposited in the super cells in a direction parallel to the columns for a temperature range of about -40 DEG C to about 100 DEG C without damage to the solar module And provides mechanical compliance to accommodate thermal expansion mismatches between the supercells and the glass front sheet.

Z7. In a photovoltaic module of any of the claims Z1-Issue Z6, N is greater than or equal to about 300, greater than or equal to about 350, greater than or equal to about 400, greater than or equal to about 450, or less than or equal to about 500 Greater than or equal to about 550, greater than or equal to about 550, greater than or equal to about 600, greater than or equal to about 650, and greater than or equal to about 700.

Z8. In the photovoltaic module of any of items &lt; RTI ID = 0.0 &gt; Z1-Z7, &lt; / RTI &gt; the supercells are greater than or equal to about 120 volts, greater than or equal to about 180 volts, greater than or equal to about 240 volts, Or greater than or equal to about 360 volts, greater than or equal to about 420 volts, or greater than or equal to about 480 volts, greater than or equal to about 540 volts, or greater than or equal to about 600 volts, .

Z9. The solar energy system,

Z1 solar module; And

And an inverter electrically connected to the solar module and configured to convert the DC output from the solar module to provide an AC output.

Z10. In the Z9 solar system, the inverter lacks a DC to DC boost component.

Z11. In the solar system of matter Z9, the inverter is configured to operate the solar module at a DC voltage above a minimum voltage set to avoid reverse biasing the solar cell.

Z12. In the solar system of matter Z11, the minimum voltage value is temperature dependent.

Z13. In the solar system of matter Z9, the inverter recognizes a reverse bias condition and is configured to operate the solar module at a voltage that avoids the reverse bias condition.

Z14. In the solar system of matter Z13, the inverter is configured to operate the solar module in a maximum area of the voltage-current output curve of the solar module to avoid the reverse bias condition.

Z15. In the solar energy system of any of items Z9-Z14, the inverter is a micro-inverter integrated with the solar module.

The invention disclosed herein is illustrative and not restrictive. Other variations will be apparent to those skilled in the art in light of the present invention and are intended to be included within the scope of the appended claims.

Claims (20)

In a solar module,
Each supercell is arranged with opposing edges of adjacent and overlapping solar cells and arranged to electrically connect the solar cells of each supercell in series with each other, A plurality of silicon solar cells electrically coupled to each other;
A bus electric conductor traveling along a centerline of the solar module within a gap between adjacent first and second super cells of the plurality of super cells;
And a bypass diode coupled to the bus electrical conductor,
Wherein the bus electrical conductor travels along the centerline in a plane with the first and second supercells and is connected to the bypass diode in an area between the first and second supercells. The solar module according to claim 1, wherein the supercells are electrically connected in parallel. 3. The method of claim 2,
Further comprising one or more interconnects connecting the two super cells of the plurality of supersells in parallel at an intermediate position along two supersells, the one or more interconnects being connected to the two supersells And electrically connecting one middle solar cell of the two super cells to another adjacent middle solar cell of the two super cells. The method of claim 3,
Further comprising one or more second interconnects for connecting a third super cell of the plurality of super cells in parallel to the two super cells at the intermediate location along the two super cells, 2 interconnects electrically connect the middle solar cell of the third supercell to the one middle solar cell of the two supergels. 4. The method of claim 3, wherein the two super cells are the first and second super cells, and the one or more interconnects span a gap between the adjacent first and second super cells. module. 5. The photovoltaic module of claim 4, wherein the one or more interconnects extend orthogonally to the bus electrical conductor. The photovoltaic module of claim 1, wherein the bypass diode is disposed in a plane with the first and second super cells in a gap between the first and second super cells. 2. The device of claim 1, further comprising an additional bypass diode coupled to the bus electrical conductor in an area between the first and second super cells, wherein the bypass diode and the additional bypass diode are connected to each other The first super cell and the second super cell being arranged to bypass the different sections of each of the first super cell and the second super cell when they are in a reverse bias state. 9. The solar module of claim 8, wherein the bypass diode and the additional bypass diode are disposed in a plane with the first and second super cells in a gap between the first and second super cells. . The photovoltaic module of claim 1, wherein the bypass diode is disposed along a peripheral edge of the photovoltaic module. The photovoltaic module of claim 1, wherein the first and second super cells are disposed in adjacent parallel rows of the plurality of supersells. 12. The method of claim 11,
The solar module is rectangular with two parallel short sides and two parallel long sides;
Wherein the centerline of the photovoltaic module is parallel to the long sides of the photovoltaic module. 12. The photovoltaic module of claim 11, wherein each row comprises only a single supercell that travels along the length of the long sides of the solar module. The solar cell module according to claim 1, wherein the first and second super cells are located in the same column of the plurality of supergels, and the gap proceeding along a center line of the solar module includes the adjacent first and second super cells Wherein the solar cell module is a solar module module. 15. The method of claim 14,
The solar module is rectangular with two parallel short sides and two parallel long sides;
Wherein the centerline of the photovoltaic module is parallel to short sides of the photovoltaic module. In a solar module,
A plurality of supersells arranged in two or more physically parallel rows, each supersell arranged with opposing edges of adjacent and overlapping solar cells, and electrically connecting solar cells of each supersell A plurality of silicon solar cells electrically connected to each other so as to be connected in series;
And a bus electrical conductor traveling along a centerline of the photovoltaic module within a gap between adjacent first and second supercells of the plurality of supercells, And in the plane along the centerline;
And connection means for connecting the bus electrical conductor to the pass diode;
And one or more interconnects connecting the first and second super cells of the plurality of supersells in parallel at an intermediate position along the two supersells,
Wherein the one or more interconnects electrically couple a solar cell in the middle of one of the two supersells to an adjacent adjacent solar cell in the other of the two supersells. In a solar module,
Each supercell is arranged with opposing edges of adjacent and overlapping solar cells and arranged to electrically connect the solar cells of each supercell electrically in series with each other, A plurality of silicon solar cells electrically coupled to each other;
One or more interconnects interconnecting the plurality of super cells at an intermediate location along the plurality of super cells, wherein the one or more interconnects are connected to one or more thermal gaps between adjacent columns of the super cells Wrapping;
And a bus electrical conductor running along a centerline of the solar module within a centerline gap between two adjacent rows of the supercells and connected to the bypass diode, the centerline gap extending along a centerline of the module Wherein the solar cell module is a solar cell module. 18. The solar cell module of claim 17, wherein the bus electrical conductor occupies a portion of a front surface of the solar module, whereby the center line gap between two adjacent rows of the supersells is required, Are arranged such that the rows of them are small or close to each other with no gaps or additional gaps between them. 19. The integrated circuit of claim 18, wherein the bus electrical conductor comprises a plurality of conductor segments for connecting a plurality of bypass diodes, each of the bypass diodes having a respective one of the super- &Lt; / RTI &gt; is arranged to bypass said another section of cells. 20. The system of claim 19, wherein each of the supersells has a first bypass section and a second bypass section, wherein the first and second bypass sections of the first one of the supersells comprise a second Adjacent to said first and second bypass sections of each of said first and second bypass sections.

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