KR20180084819A - 반도체 장치, 상기 반도체 장치를 가지는 표시 장치, 및 상기 반도체 장치를 가지는 전자 기기 - Google Patents
반도체 장치, 상기 반도체 장치를 가지는 표시 장치, 및 상기 반도체 장치를 가지는 전자 기기 Download PDFInfo
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- KR20180084819A KR20180084819A KR1020187014740A KR20187014740A KR20180084819A KR 20180084819 A KR20180084819 A KR 20180084819A KR 1020187014740 A KR1020187014740 A KR 1020187014740A KR 20187014740 A KR20187014740 A KR 20187014740A KR 20180084819 A KR20180084819 A KR 20180084819A
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- 239000004065 semiconductor Substances 0.000 title 3
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/426—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H10K50/00—Organic light-emitting devices
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
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- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2015227617 | 2015-11-20 | ||
JPJP-P-2015-227617 | 2015-11-20 | ||
JP2015237207 | 2015-12-04 | ||
JPJP-P-2015-237207 | 2015-12-04 | ||
PCT/IB2016/056731 WO2017085591A1 (ja) | 2015-11-20 | 2016-11-09 | 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020247035698A Division KR20240158375A (ko) | 2015-11-20 | 2016-11-09 | 반도체 장치, 상기 반도체 장치를 가지는 표시 장치, 및 상기 반도체 장치를 가지는 전자 기기 |
Publications (1)
Publication Number | Publication Date |
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KR20180084819A true KR20180084819A (ko) | 2018-07-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020187014740A KR20180084819A (ko) | 2015-11-20 | 2016-11-09 | 반도체 장치, 상기 반도체 장치를 가지는 표시 장치, 및 상기 반도체 장치를 가지는 전자 기기 |
Country Status (5)
Country | Link |
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US (4) | US11329166B2 (ko) |
JP (3) | JPWO2017085591A1 (ko) |
KR (1) | KR20180084819A (ko) |
CN (2) | CN108292683A (ko) |
WO (1) | WO2017085591A1 (ko) |
Cited By (5)
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KR20200079900A (ko) * | 2018-12-26 | 2020-07-06 | 엘지디스플레이 주식회사 | 이종의 절연막을 포함하는 게이트 절연막을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
KR20210083638A (ko) * | 2019-12-27 | 2021-07-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
US11482626B2 (en) | 2018-03-29 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US11552111B2 (en) | 2018-04-20 | 2023-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20230168191A (ko) * | 2018-12-21 | 2023-12-12 | 엘지디스플레이 주식회사 | 다층의 게이트 절연막을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068903A (zh) * | 2017-04-07 | 2017-08-18 | 惠科股份有限公司 | 一种显示面板和显示装置 |
CN107204375B (zh) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
US10355021B2 (en) * | 2017-09-21 | 2019-07-16 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor structure and method for manufacturing same |
WO2019135137A1 (ja) | 2018-01-05 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
KR102606487B1 (ko) * | 2018-02-01 | 2023-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
CN110085678A (zh) * | 2019-04-18 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | 显示面板和薄膜晶体管的制作方法 |
KR102658007B1 (ko) | 2019-07-30 | 2024-04-17 | 삼성디스플레이 주식회사 | 표시패널, 이에 포함되는 박막 트랜지스터, 및 이의 제조 방법 |
CN110880518B (zh) | 2019-11-28 | 2021-07-13 | 云谷(固安)科技有限公司 | 一种阵列基板及其制备方法和显示面板 |
US11631704B2 (en) | 2020-04-21 | 2023-04-18 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
US11450686B2 (en) * | 2020-06-29 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | High density 3D FERAM |
KR20220077305A (ko) | 2020-12-01 | 2022-06-09 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
US11581340B2 (en) | 2020-12-15 | 2023-02-14 | Sharp Kabushiki Kaisha | Active matrix substrate |
JP2022178523A (ja) | 2021-05-20 | 2022-12-02 | シャープディスプレイテクノロジー株式会社 | アクティブマトリクス基板および液晶表示装置 |
JP2023038651A (ja) | 2021-09-07 | 2023-03-17 | シャープディスプレイテクノロジー株式会社 | アクティブマトリクス基板および液晶表示装置 |
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JP2007096055A (ja) | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2009278115A (ja) | 2008-05-15 | 2009-11-26 | Samsung Electronics Co Ltd | トランジスタとこれを含む半導体素子及びそれらの製造方法 |
JP2012009836A (ja) | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
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JPH09146118A (ja) | 1995-11-27 | 1997-06-06 | Sanyo Electric Co Ltd | 半導体装置及び液晶表示装置 |
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- 2016-11-09 KR KR1020187014740A patent/KR20180084819A/ko not_active IP Right Cessation
- 2016-11-09 CN CN202211581242.5A patent/CN116154003A/zh active Pending
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2020
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US11482626B2 (en) | 2018-03-29 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
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KR20200079900A (ko) * | 2018-12-26 | 2020-07-06 | 엘지디스플레이 주식회사 | 이종의 절연막을 포함하는 게이트 절연막을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
KR20210083638A (ko) * | 2019-12-27 | 2021-07-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
Also Published As
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US20180350994A1 (en) | 2018-12-06 |
US20220149205A1 (en) | 2022-05-12 |
US11942554B2 (en) | 2024-03-26 |
CN108292683A (zh) | 2018-07-17 |
US11329166B2 (en) | 2022-05-10 |
JP2020194977A (ja) | 2020-12-03 |
US20210005754A1 (en) | 2021-01-07 |
JPWO2017085591A1 (ja) | 2018-09-06 |
JP2022186808A (ja) | 2022-12-15 |
WO2017085591A1 (ja) | 2017-05-26 |
US20240266443A1 (en) | 2024-08-08 |
CN116154003A (zh) | 2023-05-23 |
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