KR20180026284A - The graphene transparent electrode manufacturing method using the flexible substrate treated by plasma - Google Patents

Abstract

The present invention relates to a method for manufacturing a graphene transparent electrode using a plasma-treated flexible substrate. A method for manufacturing a graphene transparent electrode using a flexible substrate according to the present invention includes a step of preparing a flexible substrate; a step of generating plasma from a single gas containing at least one selected from a group consisting of fluorine (F), carbon (C), and hydrogen (H) or a mixed gas thereof, and performing the surface reform of the flexible substrate by the surface treatment of the plasma substrate; and a step of transferring graphene to the surface-treated flexible substrate and forming a transparent electrode. The generation of detects can be prevented.

Description

TECHNICAL FIELD [0001] The present invention relates to a graphene transparent electrode manufacturing method using a flexible substrate,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a transparent electrode using a flexible substrate subjected to a plasma surface treatment and more specifically to a method of manufacturing a transparent electrode having excellent electrical characteristics through surface treatment of a flexible substrate The present invention relates to a method of manufacturing a graphene transparent electrode using a flexible substrate that is subjected to a plasma surface treatment.

Transparent electrodes using graphene materials, which have many advantages such as high transparency, conductivity, flexibility and low manufacturing cost compared to ITO, have attracted much attention in industry and academia. Particularly, graphene TCF is known to have excellent flexibility as compared with TCF like conventional ITO.

Graphene is a structure in which a layer of carbon atoms spreads extremely thinly in a honeycomb shape on a flat surface, which can flow about 100 times more current than copper per unit area, and its thermal conductivity is more than twice as high as that of diamond. In addition, graphene is a transparent electrode material that has been attracting the most attention since its elastic modulus is 1.02 Tpa and its mechanical strength is very good and its stretchability is good and it can be increased up to 20% or maintain its electric conductivity even when it is folded. Therefore, graphene is required to have flexibility and mechanical strength required for flexible devices as well as transparency, electrical properties, gas / moisture barrier properties, Can also be provided.

Accordingly, it can be advantageously used in an organic light emitting diode (OLED) display or a flexible display device, which are recently widely used. However, high-quality, large-area graphene films are essential for graphen applications in practical applications. Conventional methods for producing graphene include a mechanical peeling method from high quality graphite, a method for producing a graphene film using selective sublimation of Si from a SiC wafer, a method for producing a graphene film by chemical oxidation / reduction reaction of graphite, And a graphene film synthesis method using a chemical vapor deposition (CVD) method are known. The commercial methods of large-area graphene production for the application of the transparent electrode include the third graphite redox method and the fourth CVD synthesis method. However, the most suitable method for the production of graphene for a transparent electrode is CVD synthesis method Is known as a large-area synthesis method.

However, graphene produced by the CVD synthesis method becomes a heterogeneous polycrystalline film in which grains are randomly generated because crystals randomly grow from the catalyst metal. In addition, since the graphene growth method using a catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, it takes much effort to remove the metal, There is a problem that it is not. In addition, the graphene grown by the CVD synthesis method necessarily includes a process of transferring to the substrate material, and defects may easily occur when the graphene is transferred in this process. Due to such a problem, the use of graphene as an electrode material, which is transferred to a substrate, causes a problem that electric characteristics are greatly deteriorated. Particularly, the electrical characteristics of graphene transferred to a flexible substrate using a polymer and a resin can not completely be adhered to a flexible substrate having a relatively large surface deflection relative to graphene, which is only 0.34 nm thick at the time of transferring, There is a problem that electrical characteristics are eventually reduced. In addition, there is a problem that the electric characteristic of the graphene is deteriorated due to bonding with the carbon contained in the substrate material.

On the other hand, in the case of a polymer substrate such as PET or PI, the wetting property and additive contamination during processing cause physical / chemical interference in the process of the catalyst treatment and the plating process of the electrode metal material. As a result, There is a problem that the adhesion between the electrodes is very low.

Korean Patent Publication No. 10-2013-0136854 (Dec. 13, 2013)

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a graphene transparent electrode using a flexible substrate having a plasma surface treated to overcome the above-described problems.

It is another object of the present invention to provide a method of manufacturing a flexible substrate by changing the surface shape, roughness, chemical composition, etc. of the flexible substrate material and improving the electrical characteristics of the graphene transferred onto the substrate, and controlling the surface roughness and roughness, And to provide a method of manufacturing a graphene transparent electrode using a flexible substrate that has been subjected to a plasma surface treatment capable of minimizing defects occurring and facilitating electron movement.

It is still another object of the present invention to provide a plasma display panel capable of manufacturing a highly reliable and economical device by using graphene, which is a next-generation transparent electrode of various electronic devices using flexible substrate materials, And a method for manufacturing a pinned transparent electrode.

According to another embodiment of the present invention, there is provided a method of fabricating a transparent electrode using a flexible substrate according to the present invention, comprising the steps of: preparing a flexible substrate; A plasma is generated from a single gas containing at least one selected from the group consisting of fluorine (F), carbon (C), and hydrogen (H) or a mixed gas of these gases to modify the surface of the plasma substrate through the surface treatment of the flexible substrate ; ≪ / RTI > And transferring the graphene to the flexible substrate subjected to the surface treatment to form the transparent electrode.

The flexible substrate may be a synthetic resin material or a polymer-based flexible substrate.

The flexible substrate may be formed of at least one selected from the group consisting of PC (Polycarbonate), PES (Polyether Sulfone), PET (Polyethylene Terephthalate), PEN (Polyethylene Naphthalate), PI (Polyimide), PAR (Polyarylate), COC (Cyclo Olefin) Plastic) may be used.

The plasma generating gas for the surface treatment may be a single gas selected from fluoroform (CHF ₃ ), methane (CH ₄ ), and carbon tetrafluoride (CF ₄ ) or a mixed gas thereof.

The plasma generating apparatus for the plasma surface treatment may be at least one of an atmospheric plasma generating apparatus, an inductively coupled plasma (ICP) apparatus, a capacitive coupled plasma (CCP) apparatus, a reactive ion etching (RIE) apparatus, a chemical ion beam etching (CAIBE) A reactive ion beam etching (RIBE) device, or an electron resonance plasma (ECR) device.

The flow rate and mixing ratio of fluorine (F), carbon (C), and hydrogen (H) can be controlled by the surface energy, surface shape, and bending conditions of the flexible substrate for the surface treatment.

The graphene may be graphene grown by a chemical vapor deposition (CVD) method.

According to another embodiment of the present invention, there is provided a plasma surface treatment method for a flexible substrate according to the present invention, which comprises the steps of: (a) providing at least one selected from the group consisting of fluorine (F), carbon (C) Generating a plasma with a single gas or a mixed gas thereof, and performing surface modification of the plasma substrate by performing surface treatment on the flexible substrate.

The flexible substrate may be a synthetic resin material or a polymer-based flexible substrate.

The flexible substrate may be formed of at least one selected from the group consisting of PC (Polycarbonate), PES (Polyether Sulfone), PET (Polyethylene Terephthalate), PEN (Polyethylene Naphthalate), PI (Polyimide), PAR (Polyarylate), COC (Cyclo Olefin) Plastic) may be used.

The plasma generating gas for the surface treatment may be a single gas selected from fluoroform (CHF ₃ ), methane (CH ₄ ), and carbon tetrafluoride (CF ₄ ) or a mixed gas thereof.

The plasma generating apparatus for the plasma surface treatment may be at least one of an atmospheric plasma generating apparatus, an inductively coupled plasma (ICP) apparatus, a capacitive coupled plasma (CCP) apparatus, a reactive ion etching (RIE) apparatus, a chemical ion beam etching (CAIBE) apparatus, A reactive ion beam etching (RIBE) device, or an electron resonance plasma (ECR) device.

The flow rate and mixing ratio of fluorine (F), carbon (C), and hydrogen (H) can be controlled by the surface energy, surface shape, and bending conditions of the flexible substrate for the surface treatment.

On the flexible substrate on which the surface treatment is performed, graphene is transferred to form a transparent electrode, and the graphene may be graphene grown by a chemical vapor deposition (CVD) method.

According to the present invention, it is possible to control the surface roughness, chemical composition, and the like of the flexible substrate material so as to improve electrical characteristics of the graphene transferred on the substrate, and to control the surface roughness and roughness. It is possible to minimize the defects caused by the electron beam and to facilitate the electron movement. In addition, it is possible to manufacture a highly reliable and economical device according to the use of graphene, which is a next-generation transparent electrode in various electronic equipment fields using a flexible substrate material.

1 is an image obtained by measuring the contact angle and surface state of a polymer substrate of polyimide using a scanning electron microscope (FE-SEM)
2 is a graph showing the contact angle and surface roughness of the flexible substrate,
3 shows the surface energy change of the flexible substrate,
4 shows the result of measuring the sheet resistance (Rsh) of the graphene transferred to the flexible substrate,
FIG. 5 is a conceptual diagram of a copper (Cu) electrode deposited in parallel for transferring graphene to a flexible substrate subjected to a plasma surface treatment according to the present invention and examining electrical characteristics,
FIG. 6 is a graph of current-voltage (IV) characteristics measured after fabricating a circuit using graphene transferred to a flexible substrate according to the conceptual diagram of FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with the intention of providing a thorough understanding of the present invention to those skilled in the art.

In the present invention, the surface of a flexible substrate is subjected to plasma surface treatment on a synthetic resin or polymer-based flexible substrate, and graphene is transferred to a surface-treated flexible substrate to form a transparent electrode. The present invention is intended to solve the problems associated with the use of graphene, which is a next-generation transparent electrode in the field of electronic devices, and to enable various electronic devices to be manufactured through the production of a reliable and economical graphene transparent electrode.

In the case where the conventional flexible substrate is used as it is when the graphene grown by the CVD method is transferred to the flexible substrate to form the transparent electrode, and the surface unevenness of the flexible substrate and the stress unbalance , Chemical bonding and the like, which may cause defects and deteriorate electrical characteristics.

The present invention relates to stable adhesion / adhesion of graphene transferred to a flexible substrate by performing plasma surface treatment on a flexible substrate to prevent stress imbalance applied to the graphene transferred onto the flexible substrate, defects due to surface irregularities, chemical bonding, Can increase the safety of flexible devices and increase the utilization of flexible transparent electrodes.

In order to manufacture the graphene transparent electrode according to the present invention, a flexible substrate is first prepared.

The flexible substrate may be a synthetic resin material or a polymer-based flexible substrate. For example, the flexible substrate may be formed of at least one selected from the group consisting of polycarbonate, polyether sulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polyarylate (PAR), cycloolefin (Glass Fiber Reinforced Plastic).

Next, a plasma is generated through a plasma generator for plasma generation, and the surface of the plasma substrate is modified through surface treatment of the flexible substrate.

In the plasma surface treatment, a method of surface-treating the flexible substrate by bringing the plasma into contact with the flexible substrate is used. At this time, the surface treatment conditions such as contact time, temperature, and pressure may be variously adjustable. Specifically, the surface treatment conditions can control the flow rate and the mixing ratio such as the plasma generation gas according to the desired surface energy, the shape of the substrate surface and the degree of curvature required.

The plasma generating device may be at least one of an atmospheric plasma generating device, an inductively coupled plasma (ICP) device, a capacitive coupled plasma (CCP) device, a reactive ion etching (RIE) device, a chemical ion beam etching (CAIBE) device, RIBE devices, and electron resonance plasma (ECR) devices.

As the reaction gas for plasma generation, any single gas selected from among fluorine (F), carbon (C), and hydrogen (H) or a mixed gas thereof may be used. For example, a single gas such as fluoroform (CHF ₃ ), tetrafluoromethane (CF ₄ ), methane (CH ₄ ), or a mixed gas thereof may be used. In addition, fluorine F), carbon (C), and hydrogen (H) may be used.

The plasma generating gas for the surface treatment is a mixture of fluorine (F) and carbon (C) to control the degree of improvement of the electrical characteristics of the flexible substrate material and the graphene transferred onto the substrate, ) And hydrogen (H) can be controlled.

Thereafter, the graphene is transferred to the flexible substrate on which the surface treatment has been performed to form the transparent electrode. The graphene may be graphene grown by a chemical vapor deposition (CVD) method.

Plasma treatment is performed using an active gas such as a single gas selected from among fluorine (F), carbon (C), and hydrogen (H) or a mixed gas thereof including fluoroform, , Surface energy reduction and surface roughness due to the surface chemical reaction on the flexible substrate are reduced, and stress imbalance of the transferred graphene is mitigated, so that the adhesive force between the flexible substrate and the graphene can be improved. In addition, since the roughness of the flexible substrate is reduced, the electrical characteristics of the transferred graphene are improved. This makes it possible to manufacture a flexible electronic device of a reliable graphene transparent electrode material.

Hereinafter, the remarkable effects of the present invention will be described by comparing the characteristics of the plasma-treated flexible substrate and the transferred graphene according to the present invention before and after the surface treatment.

1 is an image obtained by measuring a contact angle and a surface state of a polymer substrate of polyimide using a scanning electron microscope (FE-SEM). FIG. 1 is a graph showing the surface image of a substrate before plasma surface treatment, the surface image of a plasma-treated substrate (CH ₄ , CHF ₃ ) according to the present invention and the surface image of argon (Ar) and oxygen (O ₂ ) (Ar, O ₂ ) surface treated with plasma.

The contact angle is the angle made when the liquid equilibrates thermodynamically on the solid surface and serves as an element to analyze the sensitive surface. In general, low contact angles exhibit high wettability (hydophilic) and high surface energy, and high contact angles exhibit low wettability (hydrophobic) and low surface energy.

The contact angle is a factor that determines the surface energy of the object to be measured. The contact angle obtained through measurement using Young's equation and the surface energy of the specimen to be measured through the known surface energy of the liquid It is known that it can be calculated. Specifically, it is possible to obtain reliable and reliable surface energy by using the Owen-wendt model equation and Young's equation, which can measure the contact angles of the polar solvent and the nonpolar solvent, respectively, Do.

As shown in FIG. 1, the left reference shows the surface image of the substrate before the plasma surface treatment, and the contact angle using the polar solvent (DI water) is about 57 °.

However, as an embodiment of the present invention, the contact angles of the substrates subjected to the plasma surface treatment using the intermediate upper-stage methane (CH ₄ ) gas and the substrates subjected to the plasma surface treatment using the upper-right fluorocarbon (CHF ₃ ) ° and 87 °, respectively. In addition, the surface shape of the substrate subjected to the plasma surface treatment using the methane (CH ₄ ) gas at the uppermost stage and the plasma surface treated using the fluorocarbon (CHF ₃ ) gas at the upper right side, void, and surface cracks are alleviated to form a smooth shape.

On the other hand, the contact angles of the substrate after the plasma surface treatment using argon (Ar) at the lower middle level and oxygen (O ₂ ) at the lower right level, which were performed as the control group, were about 44 ° and 12 °, respectively. In comparison with the contact angle of a substrate subjected to a plasma surface treatment using an intermediate upper-stage methane (CH ₄ ) gas according to the present invention and a substrate subjected to a plasma surface treatment using a right upper fluorocarbon (CHF ₃ ) gas, ~ 75 deg. Is generated in the case of the present invention. It can be seen that the surface irregularity of the surface shape is also intensified.

2 is a graph showing the contact angle of the flexible substrate and the change in surface roughness. FIG. 2 is a graph showing the results of a plasma surface treatment using a substrate before plasma surface treatment, a substrate (CH ₄ , CHF ₃ ) subjected to a plasma surface treatment according to the present invention and a control group using argon (Ar) and oxygen (O ₂ ) (Contact angle) and surface roughness (Ra) of the substrate (Ar, O ₂ ).

As shown in FIG. 2, the arithmetic mean roughness (Ra) value of the surface of the flexible substrate before plasma processing was 33.6 Å. Meanwhile, according to the embodiment of the present invention, the arithmetic mean roughness (Ra) values of the substrates (CH ₄ , CHF ₃ ) after the plasma treatment using the methane gas and the fluoroform gas were decreased to 26.2 Å and 30.1 Å, .

On the other hand, the arithmetic average roughness (Ra) of the substrate (Ar, O ₂ ) after the plasma treatment using argon and oxygen gas as the control group increased sharply to 40.3 Å and 47.9 Å.

It can be seen that the surface roughness changes according to the change of the surface shape and it is possible to control the surface shape of the substrate through the plasma treatment as in the present invention. Therefore, in order to alleviate the roughness of the surface of the flexible substrate and to improve the electrical characteristics of the transferred graphene, it is preferable to perform the surface treatment of the substrate by using a gas containing fluorine, carbon and hydrogen such as fluoroform and methane.

3 shows the surface energy change of the flexible substrate. FIG. 3 shows the surface energy values measured using the Owen & wendt model method by measuring the contact angles of a polar solvent (DI water) and a non-polar solvent (Diiodomethane) The surface energy change of the substrate (Ar 4 O ₂ ) subjected to the plasma surface treatment by using the plasma-treated substrate (CH ₄ , CHF ₃ ) and the argon (Ar) and oxygen (O ₂ ) .

In FIG. 3, 'd' represents a bonding force related to a dispersion (non-polar) component such as a dipole-dipole between a solid and a liquid, a dipole-induced dipole, a hydrogen bond, etc., and 'p' represents a bonding force related to a polar component. Since the surface energy is generated by the interaction between atoms or molecules, we can use [2] as follows to take both the polar and nonpolar components into account.

[Formula 1]

Surface energy (γ _S ) = γ _S ^d + γ _S ^p

(? _S ^d : dispersion term of surface energy, γ _S ^p : polar term of surface energy)

As shown in FIG. 3, the surface energy value of the flexible substrate before plasma treatment was 56.37 mJ / m ² . On the other hand, the use of methane gas and peulreu climb formaldehyde gas plasma surface processing a substrate according to an embodiment of the present invention (CH _4, CHF ₃₎ surface energy are reduced to respective 49.34mJ / m ² and 26.14mJ / m ² of . On the other hand, the surface energies of the plasma-treated substrates (Ar, O ₂ ) using argon and oxygen gas as the control group increased to 63.13 mJ / m ² and 76.12 mJ / m ² , respectively.

In general, the surface energy is defined as the value of the space between the solid and the gas (more precisely, the space in which the atoms do not move) and is an important indicator of adhesion / adhesion, and is an important factor in surface bonding as well as surface roughness.

The high surface energy means that the higher energy per unit area is concentrated, which means that stronger bonding can be achieved. However, in the case of the grafting with the transferred graphene as in the case of the present invention, since the thickness of graphene is only 0.34 nm as described above, the increase of the surface energy due to the increase in surface roughness Which causes stress imbalance of the fins, which is a factor for reducing the adhesive / adhesive property and the electrical property. Also, considering the thickness of the graphene, the increase of the roughness serves to prevent the movement of electrons.

Therefore, it is preferable that the surface of the flexible substrate is surface-treated by using a plasma including fluorine such as fluoroform and methane and a gas containing carbon and hydrogen as in the present invention, thereby reducing the surface energy.

4 shows the result of measuring the sheet resistance (Rsh) of the graphene transferred to the flexible substrate. 4 shows the result of measuring the sheet resistance using a 4-point probe of graphene transferred onto a flexible substrate. The substrate before the plasma surface treatment and the substrate subjected to the plasma surface treatment according to the present invention (CH ₄ , CHF _3), and shows the sheet resistance properties of the graphene transfer using argon (Ar) and oxygen (O ₂₎ as a control on the plasma-treated substrate surface (Ar, O _2).

As shown in FIG. 4, the sheet resistance of the graphene transferred to the flexible substrate before the plasma treatment was 1.68 k? / Square, and in accordance with the embodiment of the present invention, The sheet resistances of the graphene transferred to the treated substrate (CH ₄ , CHF ₃ ) were 0.89 kΩ / □ and 0.58 kΩ / □, respectively. The plasma treated substrate (Ar, O ₂ ), The sheet resistance of the graphene transferred is 1.86 k? /? And 2.32 k? /?, Respectively.

According to the embodiment of the present invention, the sheet resistances of graphene transferred to the substrate (CH ₄ , CHF ₃ ) subjected to the plasma surface treatment using methane gas and fluoroform gas are respectively 0.89 k? /? And 0.58 k? /? the sheet resistance can be seen the surface of hayeoteum 1.68kΩ / □ more significantly reduced in the graphene transferred to the flexible substrate (Reference) before the treatment, and Comparative example and the argon plasma using an oxygen gas surface substrate (Ar, O ₂₎ The surface resistance of the graphene transferred to the surface of the nonwoven fabric was more increased than that of the nonwoven fabric before the plasma surface treatment.

These results show that the electrical characteristics of graphene can be improved by transferring the graphene after the surface treatment of the flexible substrate according to the present invention.

FIG. 5 is a conceptual view in which a copper (Cu) electrode is deposited in parallel for transferring graphene to a flexible substrate subjected to a plasma surface treatment according to the present invention and for examining electrical characteristics. FIG. 6 is a cross- (IV) characteristics after circuit fabrication using transferred graphene. FIG. 6 is a graph showing the results of a comparison between a substrate before plasma surface treatment, a substrate subjected to a plasma surface treatment according to the present invention (CH ₄ , CHF ₃ ), and a plasma surface treated with argon (Ar) and oxygen (O ₂ ) Voltage characteristic of the graphene transferred to the substrate (Ar, O ₂ ).

As shown in FIGS. 5 and 6, the current-voltage curve of the graphene transferred to the plasma-treated substrate (CH ₄ , CHF ₃ ) using methane gas and fluoroform gas according to the embodiment of the present invention (IV curves) are measured with a higher slope than the current-voltage curve of the graphene transferred to the substrate before the plasma surface treatment. Since the inverse of the slope of the current-voltage curve means the resistance, it means that the graphene transferred to the plasma-treated substrate (CH ₄ , CHF ₃ ) using methane gas and fluoroform gas according to the embodiment of the present invention Is formed to be lower than the resistance of the graphene transferred to the substrate before the plasma surface treatment.

On the other hand, the current-voltage curve of the graphene transferred to the plasma-treated substrate (Ar, O ₂ ) using argon (Ar) and oxygen (O ₂ ) The resistance of the graphene transferred to the reference was increased. This is because, as described above, when a flexible substrate is subjected to surface treatment of a substrate using a plasma apparatus using fluorine such as fluoroform and methane, and a gas containing carbon and hydrogen, graphene is transferred to improve the electrical characteristics of graphene I can say that it is possible.

As described above, according to the present invention, the surface shape, roughness, chemical composition and the like of the flexible substrate material can be changed to improve the electrical characteristics of the graphenes transferred onto the substrate, and to control surface roughness and roughness. It is possible to minimize the defects caused by the stress unbalance occurring at the time of electron transfer and to facilitate the electron movement. In addition, it is possible to manufacture a highly reliable and economical device according to the use of graphene, which is a next-generation transparent electrode in various electronic equipment fields using a flexible substrate material.

The foregoing description of the embodiments is merely illustrative of the present invention with reference to the drawings for a more thorough understanding of the present invention, and thus should not be construed as limiting the present invention. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the basic principles of the present invention.

Claims (14)

A method of manufacturing a graphene transparent electrode using a flexible substrate, comprising:
Preparing a flexible substrate;
A plasma is generated from a single gas containing at least one selected from the group consisting of fluorine (F), carbon (C), and hydrogen (H) or a mixed gas of these gases to modify the surface of the plasma substrate through the surface treatment of the flexible substrate ; ≪ / RTI >
And transferring the graphene to the flexible substrate on which the surface treatment has been performed to form a transparent electrode. The method according to claim 1,
Wherein the flexible substrate is a synthetic resin material or a polymer-based flexible substrate. The method of claim 2,
The flexible substrate may be formed of at least one selected from the group consisting of PC (Polycarbonate), PES (Polyether Sulfone), PET (Polyethylene Terephthalate), PEN (Polyethylene Naphthalate), PI (Polyimide), PAR (Polyarylate), COC (Cyclo Olefin) Wherein the substrate is a glass substrate. The method according to claim 1,
Wherein the plasma generating gas for the surface treatment is a single gas selected from the group consisting of fluoroform (CHF ₃ ), methane (CH ₄ ), and carbon tetrafluoride (CF ₄ ) or a mixed gas thereof. The method according to claim 1 or 4,
The plasma generating apparatus for the plasma surface treatment may be at least one of an atmospheric plasma generating apparatus, an inductively coupled plasma (ICP) apparatus, a capacitive coupled plasma (CCP) apparatus, a reactive ion etching (RIE) apparatus, a chemical ion beam etching (CAIBE) apparatus, A reactive ion beam etching (RIBE) device, and an electron resonance plasma (ECR) device. The method according to claim 1,
The flow rate and mixing ratio of fluorine (F), carbon (C), and hydrogen (H) are controlled by the surface energy, surface shape, and bending conditions of the flexible substrate for the surface treatment. Graphene transparent electrode manufacturing method. The method according to claim 1,
Wherein the graphene is graphene grown by a chemical vapor deposition (CVD) method. A plasma surface treatment method for a flexible substrate, comprising:
Preparing a flexible substrate;
A plasma is generated from a single gas containing at least one selected from the group consisting of fluorine (F), carbon (C), and hydrogen (H) or a mixed gas of these gases to modify the surface of the plasma substrate through the surface treatment of the flexible substrate And performing the plasma surface treatment. The method of claim 8,
Wherein the flexible substrate is a synthetic resin material or a polymer-based flexible substrate. The method of claim 9,
The flexible substrate may be formed of at least one selected from the group consisting of PC (Polycarbonate), PES (Polyether Sulfone), PET (Polyethylene Terephthalate), PEN (Polyethylene Naphthalate), PI (Polyimide), PAR (Polyarylate), COC (Cyclo Olefin) Wherein the substrate is one selected from the group consisting of plastics. The method of claim 8,
Wherein the plasma generating gas for the surface treatment is a single gas selected from the group consisting of fluoroform (CHF ₃ ), methane (CH ₄ ), and carbon tetrafluoride (CF ₄ ) or a mixed gas thereof. The method of claim 8,
The plasma generating apparatus for the plasma surface treatment may be at least one of an atmospheric plasma generating apparatus, an inductively coupled plasma (ICP) apparatus, a capacitive coupled plasma (CCP) apparatus, a reactive ion etching (RIE) apparatus, a chemical ion beam etching (CAIBE) apparatus, A reactive ion beam etching (RIBE) device, and an electron resonance plasma (ECR) device. The method of claim 8,
The flow rate and mixing ratio of fluorine (F), carbon (C), and hydrogen (H) are controlled by the surface energy, surface shape, and bending conditions of the flexible substrate for the surface treatment. Plasma surface treatment method. The method of claim 8,
Wherein the graphene is transferred to the flexible substrate on which the surface treatment is performed to form a transparent electrode, and the graphene is graphene grown by a chemical vapor deposition (CVD) method.

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