KR20170133758A - Light emitting device - Google Patents

Abstract

An embodiment of the present invention comprises: a luminescent structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activate layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a passivation layer disposed on the first conductive semiconductor layer; a first electrode disposed on the passivation layer, contacting to the first conductive semiconductor layer through the passivation layer at one end thereof, and expanded to the bottom of the luminescent structure by being expanded in a side portion direction of the luminescent structure at the other end thereof; a second electrode disposed at the bottom of the second conductive semiconductor layer; an electrode pad disposed at the bottom of the second electrode; and an insulating layer disposed at a side surface of the luminescent structure, wherein the other end of the first electrode is separated from the insulating layer that is disposed at the side surface of the luminescent structure, thereby capable of reducing a thickness of a chip, and easily realizing an electrode pad on a small size luminescent structure.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

Group III-V nitride semiconductors have been spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) or laser diodes (LD) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

Embodiments provide a light emitting device that can reduce the thickness of a chip and can easily implement an electrode pad in a light emitting structure having a small size.

A light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; A passivation layer disposed on the first conductive semiconductor layer; A first conductive semiconductor layer disposed on the passivation layer and having one end contacting the first conductive semiconductor layer through the passivation layer and the other end extending toward a side of the light emitting structure, electrode; A second electrode disposed below the second conductive semiconductor layer; An electrode pad disposed under the second electrode; And an insulating layer disposed on a side surface of the light emitting structure, wherein the other end of the first electrode is spaced apart from an insulating layer disposed on a side surface of the light emitting structure.

The first electrode being disposed on the first conductive semiconductor layer; At least one contact electrode connected to the upper electrode and penetrating the passivation layer to contact the first conductive semiconductor layer; And an extension electrode connected to one end of the upper electrode and extending in a side direction of the light emitting structure to extend under the lower end of the light emitting structure.

The extension electrode being disposed on the passivation layer and extending horizontally from the upper electrode; And a second extension portion connected to the first extension portion and extending below the lower surface of the second conductivity type semiconductor layer in a direction from the first conductivity type semiconductor layer toward the second conductivity type semiconductor layer .

The second extension portion may not overlap the light emitting structure in the vertical direction, and the vertical direction may be a direction perpendicular to the upper surface of the first conductive semiconductor layer.

The lower surface of the lower surface of the second extension portion may be located on the same plane as the lower surface of the second electrode pad.

The second extension may extend to be inclined with respect to a vertical line, and the vertical line may be an imaginary straight line perpendicular to an upper surface of the first conductive type semiconductor layer.

The internal angle between the vertical line and the second extension may be 0 [deg.] To 15 [deg.].

The distance between the second extension portion and the insulating layer may increase from the first conductivity type semiconductor layer toward the second conductivity type semiconductor layer.

The second extension portion may be spaced apart from a portion of the insulating layer located on the side surfaces of the active layer and the second conductivity type semiconductor layer.

The first electrode may be positioned adjacent to one side of the upper side of the light emitting structure.

The first electrode being adjacent to the first side of the upper side of the light emitting structure; And a second electrode located adjacent to a second side of the upper surface of the light emitting structure opposite to the first side.

The second extension portion may not overlap the contact electrode in the vertical direction, and the vertical direction may be a direction perpendicular to the upper surface of the first conductive type semiconductor layer.

Wherein the insulating layer is disposed on a lower surface of the second conductive type semiconductor layer, the first insulating layer exposing the second electrode; And a second insulating layer disposed on a side surface of the light emitting structure, and a lower end of the second extending portion may be spaced apart from the first insulating layer and the second insulating layer.

Embodiments can reduce the chip thickness and facilitate implementation of the electrode pads in the light emitting structure having a small size.

1 is a top plan view of a light emitting device according to an embodiment.
2 is a bottom plan view of the light emitting device shown in Fig.
3 is a sectional view of the light emitting device shown in Figs. 1 and 2 in the AB direction.
4 is a sectional view of the light emitting device shown in Figs. 1 and 2 in the CD direction.
5A shows an embodiment of the first electrode shown in FIG.
5B shows another embodiment of the first electrode shown in FIG.
6 is a sectional view of a light emitting device according to another embodiment.
7A is a top plan view of a light emitting device according to another embodiment.
7B is a bottom plan view of the light emitting device shown in FIG. 7A.
8A is a top plan view of a light emitting device according to another embodiment.
8B is a bottom plan view of the light emitting device shown in FIG. 8A.
9 is a cross-sectional view taken along the line I-II of the light emitting device shown in Figs. 8A and 8B.
FIG. 10A is a top plan view of a light emitting device according to another embodiment, and FIG. 10B is a bottom plan view of a light emitting device shown in FIG. 10A.
11A to 11I are process drawings showing a method of manufacturing the light emitting device shown in Fig.
12 shows a cross-sectional view of a lighting device according to an embodiment.
13 shows a top view of a display device according to the embodiment.
Fig. 14 shows a cross-sectional view of the display device shown in Fig. 13 according to one embodiment in the direction AA '.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings. The same reference numerals denote the same elements throughout the description of the drawings.

1 is a top plan view of a light emitting device 1000 according to an embodiment, FIG. 2 is a bottom plan view of the light emitting device 1000 shown in FIG. 1, and FIG. 3 is a cross- Sectional view of the light-emitting device 1000 in the AB direction, and Fig. 4 is a cross-sectional view in the CD direction of the light-emitting device 1000 shown in Figs.

1 to 4, the light emitting device 1000 includes a light emitting structure 1110, a passivation layer 1120, a first electrode 1130, a second electrode 1140, a second electrode pad 1145 ), And an insulation layer (1150).

The light emitting structure 1110 is disposed between the first conductivity type semiconductor layer 1112 and the second conductivity type semiconductor layer 1116 and between the first conductivity type semiconductor layer 1112 and the second conductivity type semiconductor layer 1116 And an active layer 1114. For example, the light emitting structure 1110 may have a structure in which a first conductivity type semiconductor layer 1112, an active layer 1114, and a second conductivity type semiconductor layer 1116 are sequentially arranged from top to bottom.

For example, the diameter of the light emitting structure 1110 may decrease from the first conductivity type semiconductor layer 1112 toward the second conductivity type semiconductor layer 1116, and the side surface of the light emitting structure 1110 may have a reverse have.

Unlike a general light emitting device having a light transmitting substrate or a supporting substrate, the light emitting device 1000 according to the embodiment does not have a light transmitting substrate or a supporting substrate. Because the chip size (for example, diameter) or volume of the light emitting device is reduced, the thickness or size of an application in which the light emitting device according to the embodiment is used, for example, a display device or the like can be reduced.

The first conductivity type semiconductor layer 1112 may be a semiconductor compound such as a Group III-V, a Group II-VI, or the like, and may be doped with a first conductivity type dopant.

For example, the first conductivity type semiconductor layer 1112 may be a semiconductor semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And an n-type dopant (e.g., Si, Ge, Se, Te, etc.) may be doped.

In order to increase light extraction, a light extracting structure, for example, a concavity and convexity 1112a may be formed on the top surface of the first conductivity type semiconductor layer 1112. [

The active layer 1114 is formed by the energy generated in the recombination process of electrons and holes provided from the first conductivity type semiconductor layer 1112 and the second conductivity type semiconductor layer 1116 Can be generated.

The active layer 1114 may be a Group III-V or VI-VI compound semiconductor and may be a single well structure, a multi-well structure, a quantum-wire structure, a quantum dot, (Quantum Disk) structure.

The active layer 1114 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? In the case where the active layer 1114 is a quantum well structure, the active layer 1114 is formed of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And a barrier layer (not shown) having a composition formula of In _a Al _b Ga _{1 -a- b} N (0? A? 1, 0? _B ? 1, 0? A + ).

The energy band gap of the well layer of the active layer 1114 may be lower than the energy band gap of the barrier layer. The well layer and the barrier layer may be alternately laminated at least once.

The second conductivity type semiconductor layer 1116 may be a semiconductor compound such as a Group III-V, a Group II-VI, or the like, and the second conductivity type dopant may be doped.

For example, the second conductivity type semiconductor layer 1116 may be a semiconductor semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + , And a p-type dopant (e.g., Mg, Zn, Ca, Sr, Ba) can be doped.

The light emitting structure 1110 may generate any one of red light, green light, and blue light, but the present invention is not limited thereto, and it may generate visible light of various wavelengths or generate ultraviolet light.

For example, the first conductivity type semiconductor layer of the light emitting structure 1110 that generates red light may be formed of In _x Al _y Ga _1-xy P (0? _X? 1, 0? _Y? 1, 0? _X + _{in x Al y Ga 1 -x- y} N semiconductor materials having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ), e.g., AlGaP, InGaP, AlInGaP, InP , GaN , InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP, and may include an n-type dopant.

In addition, for example, the active layer of the light emitting structure 1110 for generating red light may be formed of GaInP / AlGaInP, GaP / AlGaP, InGaP / AlGaP, InGaN / InGaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs / AlGaAs, But the present invention is not limited thereto.

For example, the composition of the quantum well layer of the active layer of the light emitting structure that generates red light may be (Al _p Ga _{1 -p} ) _q In _{1 - q} P layer (where _{0 ?} P? _{1, 0 ? Q?} and the composition of the quantum barrier layer is _{(Al p1 Ga 1 - p1)} q1 in 1 - _q1 be a P layer (where, 0≤p1≤1, 0≤q1≤1), but the embodiment is not limited thereto.

For example, the second conductivity type semiconductor layer of the light emitting structure that generates red light may be In _x Al _y Ga _1-xy P (0? _X? 1, 0? _Y? 1, 0? _X + May be formed of a semiconductor material having a composition formula of Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y ? 1, 0? X + y? 1) and may include a p-type dopant .

Although not shown in FIGS. 3 and 4, in order to prevent electrons injected from the first conductivity type semiconductor layer 1112 into the active layer 1114 from being transferred to the second conductivity type semiconductor layer 1116, The light emitting structure 1110 may further include an electron blocking layer disposed between the active layer 1114 and the second conductivity type semiconductor layer 1116. At this time, the energy band gap of the electron blocking layer is larger than the energy band gap of the barrier layer of the active layer 1114.

The first electrode 1130 is disposed on the light emitting structure 1110 and has one end contacting the first conductive semiconductor layer 1112 and the other end extending toward the side of the light emitting structure 1110, As shown in FIG.

The passivation layer 1120 is disposed on the first conductivity type semiconductor layer 1112. The passivation layer 1120 may be disposed between the upper surface of the first conductive type semiconductor layer 1112 and the lower surface of the first electrode 1130. Also, for example, the passivation layer 1120 may also be disposed on the second insulating layer 1154.

For example, the first electrode 1130 includes an upper electrode 1134, a contact electrode 1136, and an extension electrode 1132.

The upper electrode 1134 is disposed on the passivation layer 1120 disposed on the first conductive type semiconductor layer 1112 and the second insulating layer 1154.

1, the upper electrode 1134 may be disposed adjacent to an edge of the first conductivity type semiconductor layer 1121, for example, an edge of the upper surface of the first conductivity type semiconductor layer 1112, but is not limited thereto And the center of the upper surface of the first conductivity type semiconductor layer 1112 may be disposed.

The planar shape of the upper electrode 1134 shown in FIG. 1 is rectangular, but not limited thereto. In other embodiments, the planar shape of the upper electrode 1134 may be circular, oval, or polygonal.

The contact electrode 1136 extends from the lower surface of the upper electrode 1134 and contacts the upper surface of the first conductive type semiconductor layer 1112 through the passivation layer 1120.

For example, the contact electrode 1136 may extend from the lower surface of the upper electrode 1134 toward the upper surface of the first conductive type semiconductor layer 1112, and may be in ohmic contact with the upper surface of the first conductive type semiconductor layer 1112 have.

The contact electrode 1136 may be spaced apart from the portion where the upper electrode 1134 and the extended electrode 1132 meet. The current flowing through the extension electrode 1132 may be dispersed in the light emitting structure 1110 to improve the light efficiency of the light emitting device 1000.

One end of the extension electrode 1132 is connected to one end of the upper electrode 1134 and the other end extends from the upper electrode 1134 to below the lower surface of the second conductivity type semiconductor layer 1116 of the light emitting structure 1110.

The extension electrode 1132 may include a first extension portion 1132a and a second extension portion 1132b connected to the first extension portion 1132a.

The first extension portion 1132a may be connected to the upper electrode 1134 and may be in contact with the edge of the passivation layer 1120.

The second extension part 1132b is connected to the first extension part 1132a at one end and extends in the direction from the first conductivity type semiconductor layer 1112 to the second conductivity type semiconductor layer 1116, 1110 in the vertical direction.

Also, the second extension part 1132b does not overlap with the contact electrode 1136 in the vertical direction. And may be perpendicular to the upper surface of the first conductive semiconductor layer 1112 in the vertical direction.

The lower end of the second extension portion 1132b may extend to a lower end of the light emitting structure 1110, for example, below the lower surface of the second conductivity type semiconductor layer 1116. [ For example, the lower surface of the second extension portion 1132b may extend to the lower end of the light emitting structure so as to be located on the same plane as the lower surface of the second electrode pad 1145. This is for die bonding or flip chip bonding with a package body, submount, or substrate.

In FIG. 3, the passivation layer 1120 may expose a portion of the top surface of the first conductivity type semiconductor layer 1112.

The passivation layer 1120 may be formed of the transparent insulating material, for example, SiO _2, SiOx, Si ₃ N _4, TiO _2, SiNx, SiO _x N _y, or Al ₂ O _3.

FIG. 5A shows an embodiment of the first electrode 1130 shown in FIG.

Referring to FIG. 5A, the first electrode 1130 may include an upper electrode 1134, a contact electrode 1136, and an extension electrode 1132.

For example, the contact electrode 136 may be in the form of a straight line, but is not limited thereto, and may be circular, elliptical, or polygonal depending on the planar shape of the upper electrode 1134.

FIG. 5B shows another embodiment 1130a of the first electrode 1130 shown in FIG.

5B, the first electrode 1130a may include an upper electrode 1134, a plurality of contact electrodes 1136-1 to 1136-4 disposed apart from each other, and an extension electrode 1132 .

Each of the plurality of contact electrodes 1136-1 to 1136-4 is in contact with or connected to the lower surface of the upper electrode 1134 and contacts the upper surface of the first conductivity type semiconductor layer 1112 through the passivation layer 1120 .

The shape of the plurality of contact electrodes 1136-1 to 1136-4 may be rectangular, but is not limited thereto, and may be circular or polygonal.

The second electrode 1140 is disposed under the light emitting structure 1110 and contacts the second conductive type semiconductor layer 1116. For example, the second electrode 1140 may be disposed on the lower surface of the light emitting structure 1110, for example, on the lower surface of the second conductivity type semiconductor layer 1116.

The second electrode 1140 is disposed between the second conductive type semiconductor layer 1116 and the second electrode pad 1145 and the second electrode 1140 and the second conductive type semiconductor layer 1116 may be in ohmic contact with each other. have.

The first electrode 1130 may include an ohmic contact layer for ohmic contact with the first conductivity type semiconductor layer 1112, and a reflective layer. For example, the first electrode 1130 may be made of an alloy including at least one of Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag, Ni, Ti, ≪ / RTI >

The second electrode 1140 may include an ohmic contact layer for ohmic contact with the second conductivity type semiconductor layer 1116, and a reflective layer.

For example, the ohmic contact layer of the second electrode 1140 may be a transparent conductive oxide such as ITO, or Ni, Cr. For example, the reflective layer of the second electrode 1140 may be Ag, Al, or Rh, or may be an alloy containing Ag, Al, or Rh, or may be an alloy containing Cu, Re, Bi, Al, Zn, Or Ni and an alloy of silver (Ag).

The second electrode 1140 may further include at least one of a diffusion prevention layer and a bonding layer. For example, the second electrode 1140 may further include a diffusion barrier layer including at least one of Ni, Cr, Ti, Pd, Pt, W, Co, or Cu. For example, the second electrode 1140 may further include a bonding layer formed of gold (Au), silver (Ag), or Au alloy.

Each of the first electrode pad 1135 and the second electrode pad 1145 may be a conductive metal capable of maintaining electrical conduction to a portion bonded to a package body, a submount, or a substrate. For example, each of the first electrode pad 1135 and the second electrode pad 1145 may include at least one of Au, Ni, Cu, or Al, or an alloy including at least one of them.

Also, for bonding, for example, to a package body, submount, or substrate, for self-assembly of a light emitting device having a small size (e.g., less than 100 microns in diameter) The electrode pad 1145 may include at least one of Co, Ni, or Fe, or an alloy including at least one of them.

The insulating layer 1150 is disposed on at least one of a side surface and a bottom surface of the light emitting structure 1110.

The insulating layer 1150 may be disposed under the second conductive type semiconductor layer 1116.

For example, the insulating layer 1150 may include a first insulating layer 1152 disposed on the lower surface of the second conductive type semiconductor layer 1116.

For example, the first insulating layer 1152 may be disposed in a remaining region of the lower surface of the second conductive type semiconductor layer 1116 except for a region where the second electrode 1140 is disposed. The first insulating layer 1152 may be disposed in the edge region of the lower surface of the second electrode 1140 disposed on the lower surface of the second conductivity type semiconductor layer 1116, It is possible to expose a part of the lower surface.

The second electrode pad 1145 may be disposed under the first insulating layer 1152 and the second electrode 1145.

The lower surface of the second electrode pad 1145 and the lower surface of the second extension portion 1132b are formed in the same plane (for example, the lower surface of the second electrode pad 1145 and the lower surface of the second extension portion 1132b) for die bonding with a package body, a submount, 305). ≪ / RTI >

The second electrode pad 1145 may be disposed under a portion of the lower surface of the second electrode 1140 exposed by the first insulating layer 1152 and may be connected to the exposed portion of the second electrode 1140 Can be contacted.

For example, the first insulating layer 1152 may cover only a part of the upper side of the side surface of the second electrode pad 1145. The second electrode pad 1145 may be disposed under the lower surface of the second electrode 1140 exposed by the first insulating layer 1152. The edge of the second electrode pad 1145 may extend horizontally to the bottom of the first insulating layer 1152 so as to be in contact with the bottom surface of the first insulating layer 1152. However, .

For example, the second electrode pad 1145 may be convexly curved in the direction from the second conductivity type semiconductor layer 1116 to the first conductivity type semiconductor layer 1112, but the present invention is not limited thereto.

The lower surface of the second electrode pad 1145 and the lower surface of the second extension portion 1132b may be formed to have the same shape as that of the first insulation layer, They may be located on the same plane.

The insulating layer 1150 may further include a second insulating layer 1154 disposed on a side surface of the light emitting structure 1110. For example, the second insulating layer 1154 may be disposed on a side surface of the first conductive semiconductor layer 1112, a side surface of the active layer 1114, and a side surface of the second conductive type semiconductor layer 1116.

For example, one end of the second insulating layer 1154 may extend to the edge of the upper surface of the first conductive type semiconductor layer 1112 and may be connected to or contacted with the passivation layer 1120, And the other end may be connected to or in contact with the first insulating layer 1152.

An insulating layer 1150 is an insulating material, e.g., SiO _2, SiOx, Si ₃ N _4, TiO _2, SiNx, SiO _x N _y, or Al ₂ O ₃ Or the like.

The insulating layer 1150 may be a Distributed Bragg Reflective layer having a multilayer structure in which at least two layers having different refractive indexes are alternately laminated at least once.

The insulating layer 1150 may be a structure in which a first layer having a first refractive index and a second layer having a second refractive index smaller than the first refractive index are alternately stacked one or more times.

For example, the insulating layer 1150 may be a structure in which the TiO ₂ layer / SiO ₂ layer is laminated one or more times, the thickness of each of the first and second layers may be lambda / 4, The wavelength of light emitted from the light source can be expressed by the following equation.

3, the second extension 1132b of the first electrode 1130 includes a second insulating layer 1154 located on the sides of the active layer 1114 and the second conductivity type semiconductor layer 1116, As shown in FIG.

 In addition, the lowermost end of the second extension part 1132b may be spaced apart from the first and second insulating layers 1152 and 1154. This is to prevent an electrical short between the second extension part 1132b and the second electrode pad 1145 when bonding with a package body, a submount, or a substrate.

For example, the second extension part 1132b may be extended to be inclined with respect to the vertical line 1301, the vertical line 1301 may be perpendicular to the upper surface of the first conductive type semiconductor layer, the first extension part 1132a, 2 extension part 1132b.

For example, the internal angle [theta] between the vertical line 1301 and the inner surface of the second extending portion 1132b may be 0 or more and less than 30 [deg.]. the distance between the lower end of the second extending portion 1132b and the second electrode pad 1145 is short, and electrical short-circuiting may occur between the two. Further, when? Is 30 or more, the formation of the second extension part 1132b is not easy and can be broken.

the inner surface of the second extension 1132b is parallel to the vertical line 301 when θ is 0 ° and the inner surface of the second extension 1132b is the right side of the vertical line 301 when θ is a positive number, In the case where? Is negative, the inner side of the second extension 1132b may be located on the left side 301 of the vertical line with respect to the vertical line 301.

For example, in order to stably secure short-circuit between the lower end of the second extension part 1132b and the second electrode pad 1145 and to prevent breakage of the second extension part 1132b, the vertical line 1301, And the inner angle &thetas; between the inner wall 1132a and the outer wall 1132b may be 0 DEG to 15 DEG. Or, for example, &thetas; may be more than 5 DEG and less than 15 DEG.

For example, the distance D1 between the second extension 1132b and the second insulation layer 1154 may increase from the first conductivity type semiconductor layer 1112 toward the second conductivity type semiconductor layer 1116 .

The distance D2 between the lowermost end of the second extension part 1132b and the second electrode pad 1145 may be 2 nm to 5 nm.

When D2 is less than 2 nm, there is a risk of electrical short circuit between the second extension portion 1132b and the second electrode pad 1145 during bonding with a package body, a submount, or a substrate or the like .

When D2 exceeds 5 nm, the connection between the upper electrode 1134 and the extended electrode 1132 of the first electrode 1130 may be broken or the extended electrode 1132 may be broken.

6 is a cross-sectional view of a light emitting device 1000-1 according to another embodiment. The same reference numerals as those in FIG. 3 denote the same components, and a description of the same components will be simplified or omitted.

The passivation layer 1120a of FIG. 3 exposes a portion of the top surface of the first conductivity type semiconductor layer 1112. FIG. On the other hand, the passivation layer 1120a of the light emitting device 1000-1 of FIG. 6 is formed of the same material as the first conductive semiconductor layer 1112 except for a part of the upper surface of the first conductive type semiconductor layer 1112 exposed for contact with the contact electrode 1136 The upper surface of the one conductivity type semiconductor layer 1112 may not be exposed.

For example, the passivation layer 1120a may entirely cover the upper surface of the first conductivity type semiconductor layer 1112 except for a part of the upper surface of the first conductivity type semiconductor layer 1112 in contact with the contact electrode 1136 The second insulating layer 1154, or the like.

FIG. 7A is a top plan view of the light emitting device 1000-2 according to another embodiment, and FIG. 7B is a bottom plan view of the light emitting device 1000-2 shown in FIG. 7A. 7A and 7B may be an embodiment including the passivation layer 1120a of FIG. 6. However, the present invention is not limited thereto, and the same can be applied to the light emitting device 1000 shown in FIG.

7A and 7B, the first electrode 1130a is disposed adjacent to one side (for example, 1110-3) of the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110 can do.

8A is a top plan view of the light emitting device 1000-3 according to another embodiment, FIG. 8B is a bottom plan view of the light emitting device 1000-3 shown in FIG. 8A, FIG. 9 is a cross- Sectional view of the light emitting device 1000-3 shown in Fig.

8A, 8B, and 9 may be embodiments including the passivation layer 1120a of FIG. 6, but the present invention is not limited thereto, and may be equally applied to the light emitting device 100 shown in FIG.

8A, 8B, and 9, the light emitting device 1000-3 may have two first electrodes 1130b1 and 1130b2.

For example, the 1-1 electrode 1130b1 may be positioned adjacent to the first side (e.g., 1110-1) of the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110, The 1-2 electrode 1130b2 is connected to a second side (e.g., 1110-2) facing the first side (e.g., 1110-1) of the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110 ). ≪ / RTI >

The structure of each of the 1-1 and 1-2 electrodes 1130b1 and 1130b2 may be the same as that of the first electrode 1130 of FIG. 3 or FIG. 9 described above.

Compared with the embodiment of FIGS. 7A and 7B, the light emitting device 1000-3 includes two first electrodes, thereby improving the current dispersion efficiency.

8A, 8B, and 9 illustrate two first electrodes, but are not limited thereto. In other embodiments, the number of first electrodes may be three or more. In other embodiments, the first electrodes may also be disposed on opposite sides of the side surfaces 1110-1 through 1110-4 on the top surface of the light emitting structure 1110. [

10A is a top plan view of the light emitting device 1000-4 according to another embodiment, and FIG. 10B is a bottom plan view of the light emitting device 1000-4 shown in FIG. 10A. 10A and 10B may be an embodiment including the passivation layer 1120a of FIG. 6. However, the present invention is not limited thereto, and the same can be applied to the light emitting device 1000 shown in FIG.

Referring to FIGS. 10A and 10B, the light emitting device 1000-4 may have a first electrode 1130c positioned on the edge region of the upper surface of the light emitting structure 1110. FIG.

For example, the first electrode 1130c may be located at the edge adjacent to the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110. [ Compared with the light emitting devices 1000-1 to 1000-3, the embodiment shown in Figs. 10A and 10B is different from the light emitting devices 1000-1 to 1000-3 in that the first electrode 1130c is located at the edge adjacent to the side surfaces of the upper surface of the light emitting structure , The light efficiency according to the current dispersion can be further improved.

In other embodiments, the first electrode may be disposed at various locations depending on the arrangement and configuration of the package body, submount, or conductive layer of the substrate being bonded to the first electrode.

The light emitting devices 1000 and 1000-1 to 1000-4 shown in FIGS. 3, 6, 9, 7A and 7B and FIGS. 10A and 10B have a chip size (for example, a maximum chip diameter) Lt; / RTI > In the light emitting device having a diameter of less than 100 microns, it is not easy to form a bonding pad for wire bonding.

One end of the second extension portion 1132b of the first electrode 1130 that is die-bonded or flip-chip bonded to the package body, submount, or conductive layer of the substrate is placed apart from the light emitting structure , The embodiment can easily implement electrode pads for flip chip bonding or die bonding on the same side of the light emitting structure 1110 having a small size area.

11A to 11I are process drawings showing a method of manufacturing the light emitting device 1000-1 shown in Fig.

Referring to FIG. 11A, a light emitting structure 1110 is formed on a growth substrate 1410.

For example, the first conductivity type semiconductor layer 1112, the active layer 1114, and the second conductivity type semiconductor layer 1116 can be sequentially formed on the growth substrate 1410. The side surface of the light emitting structure 1110 may be an inclined surface inclined with respect to the growth substrate 1410 by an isolation etching process for the light emitting structure to separate individual chips.

Although not shown in FIG. 11A, in order to alleviate stress caused by a difference in lattice constant between the light emitting structure 1110 and the growth substrate 1410, a buffer layer or an undoped layer is formed between the growth substrate 1410 and the light emitting structure 1110, An undoped-semiconductor layer, for example, an undoped GaN layer, may be further formed.

Here, undoped GaN can be grown as unintentionally doped (unintended undoped) GaN (hereinafter referred to as "UID GaN"), particularly n-type UID GaN. For example, N-vacancy deficient in N (sodium) may be generated in a region where n-type dopant is not supplied in the growth process of GaN. When N-vacancy increases, the concentration of surplus electrons increases, UID GaN may exhibit electrical properties similar to those doped with an n-type dopant.

The growth substrate 1410 is a substrate suitable for growing a nitride semiconductor single crystal and may be any one of a sapphire substrate, a silicon (Si) substrate, a zinc oxide (ZnO) substrate and a nitride semiconductor substrate, or a substrate made of GaN, InGaN, AlGaN, AlInGaN A substrate, or the like.

Next, referring to FIG. 11B, a second electrode 1140 is formed on the second conductive semiconductor layer 1116 of the light emitting structure 1110. For example, after the conductive material for forming the second electrode 1140 is formed on the second conductive type semiconductor layer 1116, the second electrode 1140 is patterned by patterning the conductive material through the photolithography process and the etching process. Can be formed.

Next, referring to FIG. 11C, an insulating layer 1150 is formed by depositing an insulating material on the side surfaces of the light emitting structure 1110 and the second conductive type semiconductor layer 1116. For example, the first insulating layer 1152 may be formed on the second conductive type semiconductor layer 1116 and the second insulating layer 1154 may be formed on the side surface of the light emitting structure 1110, The first electrode 1152 may expose a region of the upper surface of the second electrode 1140.

Next, referring to FIG. 11D, a second electrode pad 1145 is formed on one surface of the first insulating layer 1152 and the upper surface of the exposed second electrode 1140.

For example, a conductive material is deposited on the second conductive type semiconductor layer 1116 having the first insulating layer 1152 and the second electrode 1140, and then the deposited conductive material is patterned to form a conductive layer on the insulating layer 1152 And a second electrode pad 1145 that is in contact with the second electrode 1140 can be formed.

Next, referring to FIG. 11E, a support substrate 1401 including a temporary substrate 1420 and a sacrificial layer 1430 formed on the temporary substrate 1420 is prepared.

The second electrode pad 1145 is bonded to the sacrificial layer 1430 by an adhesive member (not shown) such as silicon. In a state where the second electrode pad 1145 is bonded to the sacrificial layer 1430, the growth substrate 1410 is removed by a laser lift off (LLO) process. 11E, the light emitting structure 1110 shown in FIG. 11D is rotated by 180 degrees.

Next, referring to FIG. 11F, a buffer layer or an undoped semiconductor layer formed between the light emitting structure 1110 and the growth substrate 1410 is removed by etching or the like. The light extracting structure 1112a is formed on the surface of the first conductivity type semiconductor layer 1112 exposed by removal of the growth substrate 1410 through etching or the like.

 Next, referring to FIG. 11G, a passivation layer 1120a is formed by depositing a light-transmitting insulating material on the surface of the first conductive type semiconductor layer 1112 exposed by removal of the growth substrate 1410. Next, as shown in FIG.

A part of the passivation layer 1120a is etched to form a through hole 1302 exposing a part of the surface of the first conductivity type semiconductor layer 1112. [

The embodiment shown in FIG. 3 can be realized by patterning the passivation layer 1120a to expose the surface of the first conductivity type semiconductor layer 1112 in the process of FIG. 11G.

Next, referring to FIG. 11H, a conductive material is deposited on the passivation layer 1120a so as to fill the through hole 1301. Next, as shown in FIG. At this time, a conductive material formed on the passivation layer 1120a is deposited to extend to the upper surface of the sacrificial layer 1430 on one side of the light emitting structure 1110. [

The first electrode 1130 is formed by patterning a conductive material formed on the passivation layer 1120a. At this time, the conductive material filled in the through hole 1301 may contact the surface of the first conductive type semiconductor layer 1112.

Next, referring to FIG. 11I, the sacrificial layer 1430 is removed by chemical etching to remove the temporary substrate 1420 to obtain the light emitting device 1000-1 according to the embodiment.

12 shows a cross-sectional view of a lighting device 1200 according to an embodiment.

12, the illumination device 1200 includes a substrate 1510, a body 1520, at least one light emitting device (e.g., 1530-1 to 1530-5), and a light transmitting member 1540.

The substrate 1510 may be a printed circuit board including first and second wiring layers 1512 and 1514 and an insulating layer 1515. [ For example, the substrate 1510 may be a flexible circuit substrate.

The first and second wiring layers 1512 and 1514 may be spaced apart from each other on the substrate 1510 and the insulating layer 1515 may be formed on the substrate 1510 between the first and second wiring layers 1512 and 1514 So that the first and second wiring layers 1512 and 1514 can be electrically insulated from each other. Or in other embodiments the insulating layer 1515 may be omitted.

At least one light emitting device (e.g., 1530-1 to 1530-5) is disposed on the substrate 1510, and is electrically connected to the first and second wiring layers 1512 and 1514. At least one light emitting device (e.g., 1530-1 to 1530-5) may be any one of the light emitting devices 1000, 1000-1 to 1000-4 according to the above-described embodiment.

The body 1520 is disposed on the substrate 1510 and reflects light emitted from at least one light emitting device (e.g., 1530-1 to 1530-5).

For example, the body 1520 has a cavity, and at least one light emitting device (e.g., 1530-1 to 1530-5) may be disposed in the cavity.

For example, the body 1520 may include a number of cavities corresponding to the number of light emitting elements, and each corresponding one of the light emitting elements may be disposed in each of the cavities.

Also, the body 1520 may have a partition 1520a surrounding the periphery of at least one light emitting device (e.g., 1530-1 to 1530-5). The side surfaces of the barrier ribs 1520a may be inclined surfaces inclined with respect to the upper surface of the substrate 1510 and may reflect light emitted from at least one of the light emitting devices 1530-1 to 1530-5.

12, the number of light emitting elements is five, but the present invention is not limited thereto. When the illumination device 1200 includes a plurality of light emitting devices, the illumination device may be implemented as a light emitting module.

Also, for example, in another embodiment, the number of light emitting elements may be one, and the body 1520 may have one cavity in which the light emitting elements are disposed, and the lighting apparatus 1200 according to the embodiment may be a light emitting element package Can be implemented.

For example, when the illumination device 1200 includes a plurality of light emitting devices, and the plurality of light emitting devices generate blue light, red light, or green light, the light may be implemented as a light source of a display device that displays a light emitting module or an image .

Since the light emitting devices according to the embodiments can reduce the thickness, the light emitting module or the display device including the same can reduce the size, for example, the thickness.

A typical horizontal light emitting device includes a growth substrate (e.g., sapphire substrate), but the light emitting devices (e.g., 1530-1 to 1530-5) of the embodiment do not include a growth substrate and can be reduced in thickness.

In the general vertical type light emitting device, the first electrode pad and the second electrode pad are disposed on opposite sides of the light emitting structure, whereas the light emitting devices (e.g., 1530-1 to 1530-5) 1145 of the first electrode 1130 and the second extension 1132b of the first electrode 1130 are located on the same side of the light emitting structure 1110.

The light transmitting member 1540 is disposed in the cavity of the body 1520 so as to surround the light emitting elements 1530-2 to 1530-5. The light transmissive member 1540 can prevent breakage of the light emitting element due to an external impact and can prevent discoloration of the light emitting elements 1530-2 to 1530-5 due to moisture. In other embodiments, the light-transmissive member 1540 may be omitted.

FIG. 13 shows a plan view of a display device 3000 according to the embodiment, and FIG. 14 shows a cross-sectional view according to one embodiment of the display device AA 'of FIG.

The display device 3000 of FIG. 13 may be a mobile phone, a smart phone, a notebook computer, a digital broadcasting terminal, a PDA (Personal Digital Assistants), a PMP (Portable Miltimedia Player), a navigation device, a slate PC, A tablet PC, a digital TV, and a desktop computer, and may be implemented as a flat panel display or a flexible display. Also, the display device 3000 may be implemented as a display panel.

The time information represented by the display device 3000 can be realized by controlling the emission of a unit pixel (sub-pixel) arranged in a matrix form. In this case, the unit pixel may be a minimum unit for implementing one color formed by a combination of R (Red), G (Green), and B (Blue). The light emitting device according to the above-described embodiment may serve as a unit pixel of the display device 3000.

13 and 14, a display device 3000 includes a substrate 3100, a first wiring electrode 3112, a second wiring electrode 3114, a body 3520 having a partition wall 3520a, (A natural number of P11 to Pnm, n, m> 1) in the form of a matrix including light emitting elements (for example, 3530-1 to 3530-5), and a light transmitting member 3540.

The substrate 3100 may be a flexible substrate. For example, the substrate 3100 may include glass or polyimide, and may include an insulating material such as PEN (polyethylene naphthalate) or PET (polyethylene terephthalate) for insulation. The substrate 3100 may be transmissive, but is not limited thereto, and may be opaque in other embodiments.

A plurality of light emitting elements (e.g., 3530-1 to 3530-5) may be disposed on the substrate 3100 in the form of an mxn matrix. 14 shows only five light emitting devices, but the number of light emitting devices of the display device 3000 may be a number included in the mxn matrix.

The barrier ribs 3520a are disposed between the plurality of light emitting devices 3530-1 to 3530-5 and include a black insulator to enhance the contrast according to the purpose of the display device 3000 Or a white insulator to enhance reflectivity.

The description of the partition 1520a, the body 1520 and the light transmitting member 1540 in Fig. 12 can be applied to the partition 3520a, the body 3520, and the light transmitting member 3540. [

Each of the light emitting devices (e.g., 3530-1 to 3530-5) may be any of the embodiments shown in Figs. 3, 6, 7A, 8A, and 10A.

The first wiring electrode 3112 is disposed on the lower surface of the substrate 3100 and passes through the substrate 3100 and is connected to one end of the first electrode 1130 of each of the light emitting devices 3530-1 to 3530-5, For example, one end of the extension electrode 1132.

The second wiring electrode 3114 is disposed on the lower surface of the substrate 3100 so as to be spaced apart from the first wiring electrode 3114 and passes through the substrate 3100 to form light emitting elements 3530-1 to 3530-5 The second electrode pad 1145 of the second electrode pad 1145 is connected or bonded.

Each of the first and second wiring electrodes 3112 and 3114 may be exposed from the lower surface of the substrate 3100, but is not limited thereto. Although the first and second wiring electrodes 3112 and 3114 pass through the substrate 3100 in FIG. 14, the first and second wiring electrodes 3112 and 3114 are not limited thereto. In other embodiments, But may be located on the substrate 3100 without passing through the substrate 3100. [

Although not shown in FIGS. 13 and 14, in order to prevent electrical shorting of the first and second wiring electrodes 3112 and 3114, an embodiment may be formed between the first and the wiring electrodes 3112 and 3114 3100), it is possible to further include an insulating layer.

Each of the light emitting elements 3530-1 to 3530-5 includes a light emitting element that generates blue light, a light emitting element that generates red light, and a light emitting element that generates green light, and emits red light in the row direction and column direction, respectively A light emitting element for generating green light, and a light emitting element for generating blue light may be sequentially and repeatedly arranged. In this case, the light emitting elements, e.g., unit pixels, that emit red light, green light, and blue light may form one image pixel.

(Hereinafter referred to as "green luminescent region") of the light emitting element that emits green light, and a blue light region (hereinafter referred to as " green luminescent region " (Hereinafter referred to as "blue light emitting region") of the light emitting element that emits light can be different from each other. For example, the area of the green light emitting region and the area of the red light emitting region, which have relatively low light emitting efficiency, may be larger than the area of the blue light emitting region.

For example, the area of the green luminescent region may be 1 to 4 times the area of the blue luminescent region, and the area of the red luminescent region may be 1 to 3 times the area of the blue luminescent region.

For example, in another embodiment, the areas of the red light emitting region and the green light emitting region may be equal to each other.

For example, the ratio of the area of the blue light emitting region, the area of the red light emitting region, and the area of the green light emitting region may be 1: 2: 3 or 1: 3: 3, but is not limited thereto.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

1110: light emitting structure 1120: passivation layer
1130: first electrode 1135: first electrode pad
1140: second electrode 1145: second electrode pad
1150: Insulation layer.

Claims (14)

A light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A passivation layer disposed on the first conductive semiconductor layer;
A first conductive semiconductor layer disposed on the passivation layer and having one end contacting the first conductive semiconductor layer through the passivation layer and the other end extending toward a side of the light emitting structure, electrode;
A second electrode disposed below the second conductive semiconductor layer;
An electrode pad disposed under the second electrode; And
And an insulating layer disposed on a side surface of the light emitting structure,
And the other end of the first electrode is spaced apart from an insulating layer disposed on a side surface of the light emitting structure. The plasma display panel of claim 1,
An upper electrode disposed on the first conductive semiconductor layer;
At least one contact electrode connected to the upper electrode and penetrating the passivation layer to contact the first conductive semiconductor layer; And
And an extension electrode connected to one end of the upper electrode and extending in a side direction of the light emitting structure to extend under the lower end of the light emitting structure. The electrode assembly according to claim 2,
A first extension disposed on the passivation layer and extending horizontally from the upper electrode; And
And a second extension portion connected to the first extension portion and extending below the lower surface of the second conductivity type semiconductor layer in a direction from the first conductivity type semiconductor layer toward the second conductivity type semiconductor layer. The method of claim 3,
The second extension portion does not overlap the light emitting structure in the vertical direction, and the vertical direction is perpendicular to the top surface of the first conductive type semiconductor layer. 5. The method of claim 4,
And a bottom surface of the lower end of the second extension portion is located on the same plane as the lower surface of the second electrode pad. 5. The method of claim 4,
Wherein the second extension portion extends to be inclined with respect to a vertical line, and the vertical line is a virtual straight line perpendicular to an upper surface of the first conductive type semiconductor layer. The method according to claim 6,
And an internal angle between the vertical line and the second extending portion is 0 [deg.] To 15 [deg.]. 5. The method of claim 4,
Wherein a distance between the second extension portion and the insulating layer increases from the first conductivity type semiconductor layer toward the second conductivity type semiconductor layer. The method of claim 3,
Wherein the second extending portion is spaced apart from a part of the insulating layer located on the side surfaces of the active layer and the second conductive type semiconductor layer. The method according to claim 1,
Wherein the first electrode is located adjacent to one side of the side surfaces of the upper surface of the light emitting structure. The plasma display panel of claim 1,
A first 1-1 electrode positioned adjacent to a first side of side surfaces of the upper surface of the light emitting structure; And
And a second electrode located adjacent to a second side of the upper surface of the light emitting structure opposite to the first side. The method of claim 3,
The second extension portion does not overlap the contact electrode in the vertical direction, and the vertical direction is perpendicular to the top surface of the first conductive type semiconductor layer. The semiconductor device according to claim 3,
A first insulating layer disposed on a lower surface of the second conductive semiconductor layer and exposing the second electrode; And
And a second insulating layer disposed on a side surface of the light emitting structure,
And a lower end of the second extension portion is spaced apart from the first insulation layer and the second insulation layer. A substrate including a first wiring electrode and a second wiring electrode; And
A plurality of light emitting elements arranged in a matrix form on the substrate,
The plurality of light emitting devices include a first light emitting device for generating red light, a second light emitting device for generating green light, and a second light emitting device for generating blue light,
Wherein each of the plurality of light emitting elements is the light emitting element according to any one of claims 1 to 13,
Wherein a first electrode of each of the plurality of light emitting elements is bonded to the first wiring electrode and a second electrode pad of each of the plurality of light emitting elements is bonded to the second wiring electrode.

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