KR20170100974A - Liquid composition for removing photoresist - Google Patents
Liquid composition for removing photoresist Download PDFInfo
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- KR20170100974A KR20170100974A KR1020160023554A KR20160023554A KR20170100974A KR 20170100974 A KR20170100974 A KR 20170100974A KR 1020160023554 A KR1020160023554 A KR 1020160023554A KR 20160023554 A KR20160023554 A KR 20160023554A KR 20170100974 A KR20170100974 A KR 20170100974A
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- 239000000203 mixture Substances 0.000 title claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 26
- 239000007788 liquid Substances 0.000 title description 26
- -1 amine compound Chemical class 0.000 claims abstract description 40
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000003513 alkali Substances 0.000 claims abstract description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 78
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 63
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 19
- 239000002904 solvent Substances 0.000 claims description 15
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 14
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 14
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 12
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical group OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims description 12
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 6
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 5
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 4
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 235000019445 benzyl alcohol Nutrition 0.000 claims description 4
- 229960002887 deanol Drugs 0.000 claims description 4
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 4
- 239000012972 dimethylethanolamine Substances 0.000 claims description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 4
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 3
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 239000000347 magnesium hydroxide Substances 0.000 claims description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 3
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 3
- 150000003536 tetrazoles Chemical class 0.000 claims description 3
- 239000010949 copper Substances 0.000 abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052802 copper Inorganic materials 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000000052 comparative effect Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 5
- 230000005484 gravity Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229960004418 trolamine Drugs 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- KNVRBEGQERGQRP-UHFFFAOYSA-N 2-amino-n,n-dimethylacetamide Chemical compound CN(C)C(=O)CN KNVRBEGQERGQRP-UHFFFAOYSA-N 0.000 description 1
- GEHBUYNXWNQEIU-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC=1N=NNN=1.NC=1N=NNN=1 GEHBUYNXWNQEIU-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- PRWNQYPCHBWLIB-UHFFFAOYSA-N CC1=CC2=C(NN=N2)C=C1.CC1=CC2=C(NN=N2)C=C1 Chemical compound CC1=CC2=C(NN=N2)C=C1.CC1=CC2=C(NN=N2)C=C1 PRWNQYPCHBWLIB-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 150000003869 acetamides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- OLLZXQIFCRIRMH-UHFFFAOYSA-N n-methylbutanamide Chemical compound CCCC(=O)NC OLLZXQIFCRIRMH-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/40—Monoamines or polyamines; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C11D11/0047—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- G02F2001/1316—
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Abstract
본 발명은 포토레지스트 박리액 조성물에 관한 것으로, 좀더 상세하게 설명하자면, 아민화합물 1~10 중량%와 알칼리화합물 0.5~3 중량%, 아졸화합물 0.01~0.1 중량%, 솔벤트 1~5 중량%, 그리고 물 82~97 중량%로 구성되어 있어서, 감광성 필름(DFR)의 잔사가 남지 않고, 주변금속인 동(Cu)을 거의 부식(corrosion) 시키지 않으며, 나아가 박리편 회수가 용이한 박리액 조성물에 관한 것이다.More particularly, the present invention relates to a photoresist stripper composition comprising 1 to 10% by weight of an amine compound, 0.5 to 3% by weight of an alkali compound, 0.01 to 0.1% by weight of an azole compound, 1 to 5% (DFR) remains in the solution, and 82% to 97% by weight of water does not remain, copper (Cu) which is the surrounding metal is hardly corroded, and further, will be.
Description
본 발명은 포토레지스트 박리액 조성물에 관한 것으로, 좀더 상세하게 설명하자면, 아민화합물 1~10 중량%와 알칼리화합물 0.5~3 중량%, 아졸화합물 0.01~0.1 중량%, 솔벤트 1~5 중량%, 그리고 물 82~97 중량%로 구성되어 있어서, 감광성 필름(DFR)의 잔사가 남지 않고, 주변금속인 동(Cu)을 거의 부식(corrosion) 시키지 않으며, 나아가 박리편 회수가 용이한 박리액 조성물에 관한 것이다.More particularly, the present invention relates to a photoresist stripper composition comprising 1 to 10% by weight of an amine compound, 0.5 to 3% by weight of an alkali compound, 0.01 to 0.1% by weight of an azole compound, 1 to 5% (DFR) remains in the solution, and 82% to 97% by weight of water does not remain, copper (Cu) which is the surrounding metal is hardly corroded, and further, will be.
최근 각종 전자제품의 경박단소 추세에 따라 인쇄회로기판(PCB)의 회로 선폭이 점차 미세화 되고 있는데, 이러한 미세회로를 제조하는 일반적인 제조공정은, 먼저 절연수지 위에 도전성 금속막을 도금하고, 그 위에 감광성 포토레지스트(photo resist)를 균일하게 도포한 다음, UV 로 노광, 현상 처리하여 회로를 형성하고, 박리액 조성물을 사용하여 불필요해진 감광성 포토레지스트를 제거하는 공정으로 진행된다.BACKGROUND ART [0002] In recent years, a circuit line width of a printed circuit board (PCB) has gradually become finer in accordance with the trend of thin and small size of various electronic products. In a typical manufacturing process for manufacturing such a fine circuit, a conductive metal film is first plated on an insulating resin, A step of applying a photoresist uniformly, followed by exposure to UV and development processing to form a circuit, and a step of removing the unnecessary photosensitive photoresist using the release liquid composition.
이때 상기 박리액 조성물은 감광성 포토레지스트를 박리 한 후 미세회로에 감광성 필름(DFR)의 잔사가 없어야 하고, 주변 금속(Cu)에 대한 부식(corrosion)을 최소화 해야 하는 등의 기술적 조건이 요구되며, 이러한 조건을 충족하기 위하여 종래에도 다양한 박리액 조성물들이 개발되어 있다. At this time, the peeling liquid composition is required to have no residue of a photosensitive film (DFR) in a microcircuit after peeling off a photosensitive photoresist, and to minimize the corrosion to the surrounding metal (Cu) Various release liquid compositions have conventionally been developed to meet these requirements.
예컨대, 국내 등록특허 제10-0324172호(2002년 01월 30일)에는 수용성 유기아민 화합물 10~30 중량%와 디에틸렌글리콜 모노알킬에테르 및 N-알킬 피롤리돈의 혼합물 70~90 중량%로 이루어지고, 상기 디에틸렌글리콜 모노알킬에테르와 N-알킬 피롤리돈의 중량비가 1 : 1.1~2.5 인 것을 특징으로 하는 포토레지스트 박리액 조성물이 기재되어 있다.For example, Korean Patent No. 10-0324172 (Jan. 30, 2002) discloses that a mixture of 10 to 30% by weight of a water-soluble organic amine compound and 70 to 90% by weight of a mixture of diethylene glycol monoalkyl ether and N-alkylpyrrolidone Wherein the weight ratio of the diethylene glycol monoalkyl ether to the N-alkyl pyrrolidone is 1: 1.1 to 2.5.
그러나 상기 박리액 조성물은, 절연수지 위에 무전해 동 도금을 1.0㎛ 이하의 두께로 도금하고 그 위에 포토레지스트를 도포하여 미세회로를 형성하는 SAP(Semi-Additive Process) 공법에 사용할 경우, 상기 유기아민 화합물에 의해서 하부 무전해 동 도금층에 알칼리 부식이 발생하여 그 후속공정에 악영향을 미치는 문제점이 있었다. However, in the case of the SAP (Semi-Additive Process) method in which electroless copper plating is coated on insulating resin to a thickness of 1.0 탆 or less and a photoresist is coated thereon to form a fine circuit, There is a problem that alkaline corrosion occurs in the lower electroless copper plating layer due to the compound, adversely affecting the subsequent process.
또한, 상기 박리액 조성물은, 박리반응에 의해 미세하게 쪼개진 박리편이 박리액 탱크로 유입이 되면서 스프레이 필터(spray filter)를 막아서 압력이 저하되고 박리력이 감소하며, 나아가 박리편 성분이 박리액 조성과 반응하여 박리액의 사용 수명을 단축시키는 문제점이 있었다. In addition, the peeling liquid composition has a problem that the peeling member, which is finely cleaved by the peeling reaction, flows into the peeling liquid tank and blocks the spray filter, thereby lowering the pressure and decreasing the peeling force. Further, And the lifetime of the peeling solution is shortened.
또한, 국내 공개특허 제10-2015-0075519호(2015년 07월 06일)에는, 2-아미노-N-메틸 아세트아미드, 2-아미노-N,N-디메틸 아세트아미드, 2-아미노-N-에틸-N-메틸-아세트아미드 등과 같은 아세트아미드 화합물과; KOH, NaOH, 탄산염 등과 같은 알카리 화합물; 수용성 유기용매; 유기산류나 유기산 아미드 에스터류, 아졸계 화합물 등의 부식방지제로 이루어진 포토레지스트 박리액 조성물이 소개되어 있다. In addition, Korean Patent Laid-Open No. 10-2015-0075519 (Jul. 06, 2015) discloses a process for the production of 2-amino-N, N-dimethylacetamide, Acetamide compounds such as ethyl-N-methyl-acetamide and the like; Alkaline compounds such as KOH, NaOH, carbonate and the like; Water-soluble organic solvent; A photoresist stripper composition comprising a corrosion inhibitor such as an organic acid, an organic acid amide ester, or an azole compound has been introduced.
그러나 이러한 박리액 조성물 역시 감광성 포토레지스트를 깨끗하게 제거하지 못하고, 주변금속인 동(Cu)을 부식(corrosion) 시키는 문제점이 있다.However, such a peeling liquid composition also has a problem that it can not cleanly remove the photosensitive photoresist and corrodes copper (Cu), which is a surrounding metal.
본 발명의 목적은, 미세회로에 감광성 필름(DFR)의 잔사가 남지 않도록 감광성 포토레지스트를 깨끗하게 제거하고, 동(Cu)에 대한 부식(corrosion)을 최소화 하며, 나아가 종래 부식액에 비해 박리편의 크기가 조대하여 박리편 회수가 용이한 포토레지스트 박리액 조성물을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a method of removing a photosensitive photoresist cleanly so as not to leave a residue of a photosensitive film (DFR) on a microcircuit, minimize corrosion to copper (Cu) And to provide a photoresist stripper liquid composition which is easy to collect tear off pieces.
본 발명에 따른 포토레지스트 박리액 조성물은, 트리에탄올아민, 벤질아민, 모노에탄올아민, 디메틸에탄올아민, 에틸렌디아민 중에서 선택된 하나 이상의 아민화합물 1~10 중량%; 수산화나트륨, 수산화테트라메틸암모늄, 수산화칼륨, 수산화마그네슘, 2-하이드록시 에틸트리메틸암모늄 하이드록사이드 중에서 선택된 하나 이상의 알칼리화합물 0.5~3 중량%; 벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 피라졸, 테트라졸, 이미다졸 중에서 선택된 하나 이상의 아졸화합물 0.01~0.1 중량%; 에틸렌글리콜 페닐에테르, 에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노부틸에테르, 벤질알코올, 디에틸렌글리콜 모노벤질에테르, 에틸렌글리콜 모노메틸에테르 중에서 선택된 하나 이상의 솔벤트 1~5 중량%; 그리고 물 82~97 중량%; 로 이루어지는 것을 특징으로 한다.The photoresist stripper composition according to the present invention may contain 1 to 10% by weight of at least one amine compound selected from triethanolamine, benzylamine, monoethanolamine, dimethylethanolamine and ethylenediamine; 0.5 to 3% by weight of at least one alkaline compound selected from sodium hydroxide, tetramethylammonium hydroxide, potassium hydroxide, magnesium hydroxide and 2-hydroxyethyltrimethylammonium hydroxide; 0.01 to 0.1% by weight of at least one azole compound selected from benzotriazole, 5-methylbenzotriazole, tolyltriazole, pyrazole, tetrazole and imidazole; 1 to 5% by weight of at least one solvent selected from the group consisting of ethylene glycol phenyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, benzyl alcohol, diethylene glycol monobenzyl ether and ethylene glycol monomethyl ether; And 82-97 wt% water; .
본 발명에 따른 포토레지스트 박리액 조성물은, PCB 기판의 미세회로에서 DFR을 효과적으로 박리하여 박리편이 남지 않으며, 주변금속인 동(Cu)에 대한 부식성이 매우 낮고, 나아가 종래 부식액에 비해 박리편의 크기가 조대하여 박리편의 회수가 용이할 뿐 아니라, 박리액의 수명이 길고 유지 관리가 용이하여 결과적으로 처리 비용을 절감할 수 있는 효과가 있다.The photoresist stripper composition according to the present invention is effective in peeling off the DFR from a microcircuit of a PCB substrate, leaving no stripping parts, having very low corrosiveness to copper (Cu) which is a peripheral metal, and furthermore, Not only is it easy to recover the peeling member, but also has a long lifetime of the peeling solution and easy maintenance, thereby reducing the processing cost.
도 1은 본 발명의 실시예 및 비교예에 따른 박리액으로 처리한 PCB 기판에 대하여 회로 표면의 DFR 잔사 여부를 비교 촬영한 금속 현미경 사진,
도 2는 본 발명의 실시예 및 비교예에 따른 박리액으로 처리한 CCL 기판에 대하여 동(Cu) 부식 정도를 비교 촬영한 주사형 현미경 사진,
도 3은 본 발명의 실시예 및 비교예에 따른 박리액을 사용하여 박리시킨 DFR 박리편의 크기를 비교하여 나타낸 사진이다.Brief Description of the Drawings Fig. 1 is a photomicrograph of a DFR residue on a circuit surface of a PCB substrate treated with a peeling liquid according to an embodiment of the present invention and a comparative example,
FIG. 2 is a scanning electron micrograph of copper (Cu) corrosion on a CCL substrate treated with a peeling liquid according to Examples and Comparative Examples of the present invention,
Fig. 3 is a photograph showing sizes of DFR peeling pieces peeled off using the peeling solution according to Examples and Comparative Examples of the present invention.
본 발명에 따른 포토레지스트 박리액 조성물은, 아민화합물 1~10 중량%와 알칼리화합물 0.5~3 중량%, 아졸화합물 0.01~0.1 중량%, 솔벤트 1~5 중량%, 그리고 나머지 물 82~97 중량%로 이루어진다.The photoresist stripper solution composition of the present invention comprises 1 to 10% by weight of an amine compound, 0.5 to 3% by weight of an alkali compound, 0.01 to 0.1% by weight of an azole compound, 1 to 5% by weight of a solvent, .
먼저 상기 아민화합물은 박리액이 포토레지스트의 고분자 사슬 내부로 침투하여 부풀어 오르는 팽윤작용을 통해서 PCB 기판으로부터 포토레지스트가 박리되는 시점인 BP(break point)를 단축하고, 포토레지스트에 대한 박리력을 상승시키는 기능을 하는 것으로, 트리에탄올아민, 벤질아민, 모노에탄올아민, 디메틸에탄올아민, 에틸렌디아민 중에서 선택된 어느 하나 이상을 사용할 수 있고, 가장 바람직한 아민화합물은 모노에탄올아민이다.First, the amine compound shortens the break point (BP), which is the time point at which the photoresist is peeled from the PCB substrate, through the swelling action that the peeling liquid penetrates into the polymer chain of the photoresist and swells up, And it is possible to use at least one selected from the group consisting of triethanolamine, benzylamine, monoethanolamine, dimethylethanolamine and ethylenediamine, and the most preferred amine compound is monoethanolamine.
상기 아민화합물의 함량은 박리액 조성물 전체의 1~10 중량%를 포함하는데, 상기 함량이 1 중량% 미만이면 포토레지스트에 대한 박리력이 미약하고 BP가 증가하게 되며, 반대로 10 중량%를 초과하면 동(Cu) 부식성이 증가하고, 포토레지스트의 팽윤속도가 너무 빨라져서 회로 내에 DFR이 끼어 미박리 현상이 발생하는 문제가 있다.The content of the amine compound is 1 to 10% by weight based on the total weight of the peeling liquid composition. When the content is less than 1% by weight, the peeling force on the photoresist is weak and the BP is increased. On the other hand, There is a problem that copper corrosion is increased and the swelling speed of the photoresist becomes too fast, so that the DFR is interposed in the circuit, resulting in a phenomenon of peeling off.
다음으로 상기 알칼리화합물은 박리편의 크기를 증가시켜서 회수를 용이하게 하는 기능을 하는 것으로, 수산화나트륨, 수산화테트라메틸암모늄, 수산화칼륨, 수산화마그네슘, 2-하이드록시 에틸트리메틸암모늄 하이드록사이드 중에서 선택된 하나 이상을 사용할 수 있고, 이중에서 가장 바람직한 것은 수산화칼륨이다.Next, the alkali compound functions to facilitate the recovery by increasing the size of the peeling member. The alkali compound may be at least one selected from sodium hydroxide, tetramethylammonium hydroxide, potassium hydroxide, magnesium hydroxide and 2-hydroxyethyltrimethylammonium hydroxide Of which the most preferred is potassium hydroxide.
상기 알칼리화합물의 함량은 0.5~3 중량%를 포함하는데, 상기 함량이 0.5 중량% 미만이면 박리편의 크기를 증가시키는 효과가 미약하고, 반대로 3 중량%를 초과하면 포토레지스트의 팽윤속도가 너무 빨라져서 회로 내에 DFR이 끼어 미박리 현상이 발생하는 문제가 있다. If the content is less than 0.5% by weight, the effect of increasing the size of the stripping piece is weak. On the other hand, if the content is more than 3% by weight, the swelling rate of the photoresist becomes too high, There is a problem in that the DFR is separated from the DFR.
상기 아졸화합물은 동(Cu) 도금층에 대한 알칼리 부식을 억제하는 기능을 하는 것으로, 벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 피라졸, 테트라졸, 이미다졸 중에서 선택된 하나 이상을 사용할 수 있으며, 가장 바람직한 아졸화합물은 피라졸 이다.The azole compound has a function of inhibiting alkali corrosion to the copper (Cu) plating layer, and it is preferable to use at least one selected from benzotriazole, 5-methylbenzotriazole, tolyltriazole, pyrazole, tetrazole and imidazole And the most preferred azole compound is pyrazole.
상기 아졸화합물의 함량은 0.01~0.1 중량%인데, 상기 함량이 0.01 중량% 미만이면 동(Cu) 도금층에 대한 알칼리 부식이 발생할 우려가 있고, 반대로 0.1 중량%를 초과하면 함량 증가에 따른 효과가 미미하고 다른 구성성분들과의 사이에 불균형이 발생하며 경제성 면에서 바람직하지 않다.The content of the azole compound is 0.01 to 0.1% by weight. If the content is less than 0.01% by weight, alkali corrosion may occur on the copper (Cu) plating layer. On the other hand, if the content is more than 0.1% by weight, And an unbalance occurs with other constituents, which is not preferable in terms of economy.
상기 솔벤트는 포토레지스트에 대한 박리력을 상승시켜 주는 기능을 하는 것으로, 에틸렌글리콜 페닐에테르, 에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노부틸에테르, 벤질알코올, 디에틸렌글리콜 모노벤질에테르, 에틸렌글리콜 모노메틸에테르 중에서 선택된 하나 이상을 사용할 수 있고, 가장 바람직한 것은 벤질알코올이다.The solvent acts to increase the peeling force against the photoresist. Examples of the solvent include ethylene glycol phenyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, benzyl alcohol, diethylene glycol monobenzyl ether, ethylene glycol monomethyl Ether, and most preferably benzyl alcohol.
상기 솔벤트의 함량은 1~5 중량% 인데, 상기 함량이 1 중량% 미만이면 박리력이 미약하고, 반대로 5 중량%를 초과하면 솔벤트가 미처 용해되지 못하는 현상이 발생하기 때문에 바람직하지 않다. If the content is less than 1% by weight, the peeling force is weak. On the contrary, if the content is more than 5% by weight, the solvent may not dissolve, which is not preferable.
마지막으로 물은 상기 조성물의 전체적인 밸런스(balance)를 유지시켜 주는 기능을 하는 것으로, 박리액 조성물 전체의 82~97 중량%를 포함한다. 상기 물의 함량이 82 중량% 미만이면, 박리액 조성물의 농축 효과로 인해 포토레지스트의 팽윤속도가 빨라져서 회로 내 미박리가 발생하거나 동(Cu) 부식성이 증가하는 문제가 있고, 반대로 82~97 중량%를 초과하면, 박리액 조성물의 희석 효과로 인해 박리 성능이 감소하기 때문에 바람직하지 않다. Finally, water functions to maintain the overall balance of the composition, and it contains 82 to 97% by weight of the whole peeling liquid composition. If the content of water is less than 82% by weight, the swelling speed of the photoresist is accelerated due to the concentration effect of the stripping solution composition, resulting in a problem of peeling in the circuit or copper (Cu) corrosion, , The peeling performance is decreased due to the diluting effect of the peeling liquid composition, which is not preferable.
본 발명에 따른 박리액 조성물의 제조방법은, 먼저 상기 아민화합물과 알칼리화합물, 아졸화합물 및 솔벤트 중에서 각각 필요한 구성성분을 선정하여 소정의 함량대로 준비하고, 먼저 물에다 아민화합물과 솔벤트를 차례대로 투입하여 충분히 용해시킨다. 이와 같이 물에다 아민화합물과 솔벤트를 투입하는 것은 용해 과정에서 과도한 열이 발생하는 것을 완화시켜 주기 위함이다.In the method for preparing a release liquid composition according to the present invention, necessary components are firstly selected from among the amine compound, the alkali compound, the azole compound and the solvent, and then the amine compound and the solvent are sequentially added to the water . In this way, the introduction of amine compounds and solvents into water is intended to alleviate excessive heat generation during the dissolution process.
다음으로 여기에다 물에 용해한 아졸화합물 용액을 투입한다. 상기 아졸화합물을 미리 물에 용해한 상태로 투입하는 것은 상기 아졸화합물의 고른 분산을 유도 하고 부분적으로 미용해 현상이 발생하는 것을 방지하기 위함이다. Next, a solution of an azole compound dissolved in water is added thereto. The addition of the azole compound in a state in which the azole compound is previously dissolved in water is intended to induce even dispersion of the azole compound and prevent partial un-dissolution phenomenon.
마지막으로 알칼리화합물을 투입하고 충분히 교반한다. 상기 알칼리화합물은 비중과 점도가 높아 교반기에 대한 부하가 높고, 균일한 분산을 유도하기가 용이하지 않기 때문에 마지막에 투입하여 비중과 점도를 완화 시키는 것이 바람직하다. Finally, the alkali compound is added and sufficiently stirred. Since the alkaline compound has a high specific gravity and a high viscosity, the load on the agitator is high, and it is not easy to induce a uniform dispersion. Therefore, it is preferable to add the alkali compound at the end to alleviate the specific gravity and viscosity.
본 발명에 따른 박리액 조성물은 무색 또는 옅은 담황색 액체로서, 약한 아민향을 풍긴다. 그리고 점도는 6~8cp 이고, 비중은 1.1~1.2 g/ml 이다. The release liquid composition according to the present invention is a colorless or light pale yellow liquid with a weak amine flavor. The viscosity is 6 to 8 cp and the specific gravity is 1.1 to 1.2 g / ml.
이하, 바람직한 실시예와 비교예를 들어 본 발명을 상세하게 설명한다. 다만, 이들 실시예에 의해서 본 발명의 보호범위가 제한되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to preferred embodiments and comparative examples. However, the scope of protection of the present invention is not limited by these examples.
[실시예][Example]
다음 표 1과 같이 아민화합물과 알칼리화합물, 아졸화합물, 솔벤트 및 물을 각각 소정의 함량대로 준비한다. 먼저 물에다 아민화합물과 솔벤트를 차례대로 투입하여 충분히 용해시킨다. 여기에다 별도로 물에 용해한 아졸화합물 용액을 투입하고, 다시 알칼리화합물을 투입한 후 충분히 교반하여 본 발명에 따른 박리액 조성물을 제조한다.An amine compound, an alkali compound, an azole compound, a solvent and water are prepared in predetermined amounts as shown in Table 1 below. First, the amine compound and solvent are added to the water in order to fully dissolve. The azole compound solution dissolved in water is further added thereto, and the alkaline compound is further added thereto, followed by sufficiently stirring to prepare the release liquid composition according to the present invention.
상기 표 1에 표기된 약자의 의미는 다음과 같다.The meanings of abbreviations shown in Table 1 are as follows.
- DMEOA: 디메틸에탄올아민(Di Methyl Ethanol Amine)- DMEOA: dimethylethanolamine (Di Methyl Ethanol Amine)
- MEA: 모노에탄올아민(Mono Ethanol Amine)- MEA: Mono Ethanol Amine
- TEA: 트리에탄올아민(Tri Ethanol Amine)- TEA: triethanolamine (Tri Ethanol Amine)
- TMAH: 수산화테트라메틸암모늄(Tetra Methyl Ammonium Hydroxide)- TMAH: Tetra Methyl Ammonium Hydroxide (TMAH)
- TTZ: 톨릴트리아졸(Tolyl Triazole)- TTZ: Tolyl Triazole
- 5MBTA: 5-메틸벤조트리아졸(5-Methyl Benzotriazole)- 5MBTA: 5-Methyl Benzotriazole (5-methylbenzotriazole)
- BTA: 벤조트리아졸(Benzotriazole)- BTA: Benzotriazole
- EGPE: 에틸렌글리콜페닐에테르(Ethylene Glycol Phenyl Ether)- EGPE: ethylene glycol phenyl ether (Ethylene Glycol Phenyl Ether)
- BAOH: 벤질알코올(Benzyl Alcohol)- BAOH: Benzyl Alcohol
- DGBE: 디에틸렌글리콜 모노부틸에테르(Diethylene Glycol Mono Butyl Ether)- DGBE: Diethylene Glycol Mono Butyl Ether < RTI ID = 0.0 >
- EGBE: 에틸렌글리콜 모노부틸에테르(Ethylene Glycol Mono Butyl Ether)- EGBE: ethylene glycol monobutyl ether (Ethylene Glycol Mono Butyl Ether)
[비교예][Comparative Example]
다음 표 2와 같이 아민화합물과 알칼리화합물, 아졸화합물 및 솔벤트를 각각 소정의 함량대로 준비하고, 상기 실시예와 동일한 방법으로 박리액 조성물을 제조한다.An amine compound, an alkali compound, an azole compound, and a solvent are prepared in predetermined amounts as shown in Table 2 below, and a release liquid composition is prepared in the same manner as in the above Examples.
상기 표 2에 표기된 약자의 의미는 다음과 같다. 단 상기 표 1과 동일한 약자에 대한 설명은 생략한다.The meanings of abbreviations shown in the above Table 2 are as follows. Descriptions of the same abbreviations as in Table 1 are omitted.
- ATZ: 아미노 테트라졸(5-Amino Tetrazole)- ATZ: Aminotetrazole (5-Amino Tetrazole)
- Triazole: 1,2,4 트리아졸(1,2,4-Triazole)- Triazole: 1,2,4-Triazole
- MDG: 메틸디글리콜(Methyl Di Glycol)- MDG: Methyl Di Glycol
- DMSO: 디메틸설폭사이드(Di Methyl Sulfoxide)- DMSO: dimethylsulfoxide (Di Methyl Sulfoxide)
- MFTG: 트리프로필렌글리콜 모노메틸에테르(Tripropylene Glycol Mono Methyl Ether)- MFTG: tripropylene glycol monomethyl ether (Tripropylene Glycol Mono Methyl Ether)
- MFDG: 디프로필렌글리콜 메틸에테르(Dipropylene Glycol Methyl Ether)- MFDG: Dipropylene Glycol Methyl Ether
[성능시험][Performance test]
상기 실시예 및 비교예에 따라 제조된 박리액 조성물에 대하여 각각 다음과 같은 시험방법으로 포토레지스트에 대한 박리력과 동(Cu) 부식성 및 박리편의 크기를 측정하고, 그 결과를 다음 표 3 및 표 4에 수록 하였다.The peel strength of the photoresist, the corrosion resistance of copper (Cu) and the size of the peel piece were measured by the following test methods for the peel solution composition prepared according to Examples and Comparative Examples, and the results are shown in the following Table 3 and Table 4.
1) One) 박리력Peel force 시험 exam
스프레이 처리가 가능한 박리처리 장치 내부에 PCB 기판을 부착하고, 박리액 조성물의 온도를 50℃로 가열하여 0.2 MPa의 압력으로 각각 3분 동안 스프레이 한다. 상기 PCB 기판을 꺼내어 수세정, 5% 황산 중화, 수세정 및 건조 과정을 거친 다음, 올림푸스사 금속현미경으로 박리되지 않는 회로 표면에 DFR 잔사가 있는지 여부를 관찰하여 미박리 DFR 잔사가 없으면 ‘○’, 미박리 DFR 잔사가 있으면 ‘×’로 평가하였다.A PCB substrate is attached inside a peeling apparatus capable of spray processing, and the temperature of the peeling liquid composition is heated to 50 DEG C and sprayed at a pressure of 0.2 MPa for 3 minutes each. The PCB substrate was taken out, washed with water, neutralized with 5% sulfuric acid, washed with water and dried. Then, it was observed whether there was DFR residue on the surface of the circuit which was not peeled off with an Olympus metal microscope. , And when there was an exfoliated DFR residue, it was evaluated as 'X'.
첨부 도 1은, 박리액 처리 전 PCB 기판과 실시예 12 및 비교예 11의 박리액으로 처리한 PCB 기판에 대하여 각각 올림푸스사 금속현미경으로 회로 표면을 배율 50배로 촬영한 사진을 비교하여 나타낸 것이다. 비교예 11의 박리액으로 처리한 PCB 기판은 미세회로 내에 부분적으로 DFR 잔사가 남아 있는데 비해, 실시예 12의 박리액으로 처리한 PCB 기판은 DFR 잔사 없이 미세회로가 깨끗하게 박리된 것을 확인 할 수 있다.BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a comparison of photographs of a PCB substrate before peeling liquid treatment and a PCB substrate treated with a peeling liquid of Example 12 and Comparative Example 11, respectively, at 50 times magnification with a metal microscope from Olympus Corp. In the PCB substrate treated with the release solution of Comparative Example 11, the DFR residue remained partially in the microcircuit, whereas the PCB substrate treated with the release solution of Example 12 clearly showed that the microcircuit was cleanly removed without DFR residue .
2) 동(Cu) 부식성 시험2) copper (Cu) corrosion test
상기 박리력 시험과 동일한 방법으로 시료용 CCL(Copper Clad Laminate) 기판을 15분 간 처리하되, 박리액 처리 전 후 무게 변화를 측정한 후, 다음과 같은 방법으로 CCL 에칭량(㎛)과 CCL 에칭율(㎛/min)을 산출하고, 아무런 무게 변화가 없으면 ‘○’, 0.2 ㎛/min 이하 이면 ‘△’, 0.2 ㎛/min 이상 이면 ‘×’로 평가하였다. 이때, CCL 에칭량(㎛)과 CCL 에칭율(㎛/min)의 계산방법은 다음과 같다.The CCL (Copper Clad Laminate) substrate for the sample was treated for 15 minutes in the same manner as the peeling force test. After measuring the weight change before and after the peeling solution treatment, the CCL etching amount (μm) and the CCL etching The evaluation was made by calculating the ratio (占 퐉 / min), and when no weight change was observed, it was evaluated as?, When? 0.2 占 퐉 / min? At this time, the calculation method of the CCL etching amount (占 퐉) and the CCL etching rate (占 퐉 / min) is as follows.
① CCL 에칭량(㎛) = [박리액 처리전 CCL 무게(g)- 박리액 처리후 CCL 무게(g)] / [ 8.92(동 비중)×CCL 가로길이(cm)×CCL 세로길이(cm)] ×10,000 (1) CCL etching amount (μm) = [CCL weight before peeling liquid treatment (g) - CCL weight (g) after peeling liquid treatment] / 8.92 (copper specific gravity) × CCL width (cm) × CCL length ] × 10,000
② CCL 에칭율(㎛/min) = CCL 에칭량(㎛) / 약품 처리시간(min) ② CCL etching rate (㎛ / min) = CCL etching amount (㎛) / chemical processing time (min)
첨부 도 2는 박리액 처리 전 CCL 기판과 비교예 11 및 실시예 12의 박리액으로 처리한 CCL 기판에 대하여 각각 주사형 전자 현미경으로 촬영한 현미경 사진(배율 10,000배)을 비교하여 나타낸 것이다. 실시예 12의 박리액으로 처리한 CCL 기판은 비교예 11 의 박리액으로 처리한 CCL 기판에 비해 동(Cu) 부식이 거의 발생하지 않은 것을 확인할 수 있다. 2 is a micrograph (magnification: 10,000 times) taken by a scanning electron microscope of a CCL substrate before the peeling liquid treatment and a CCL substrate treated with the peeling liquid of Comparative Example 11 and Example 12, respectively. It can be seen that the CCL substrate treated with the exfoliation solution of Example 12 hardly suffered Cu corrosion compared to the CCL substrate treated with the exfoliation solution of Comparative Example 11. [
3) 3) 박리편Peeling piece 사이즈 시험 Size test
상기 박리력 시험과 동일한 방법으로 처리한 후에 PCB 기판에서 박리된 DFR 박리편을 포집하여 육안으로 그 크기 관찰하고, 박리편의 크기가 비교예 1 보다 크면‘○’, 비교예 1과 유사하면‘△’, 비교예 1 보다 작으면‘×’로 평가하였다. After peeling off the DFR peeled piece from the PCB substrate, the size of the peeled piece was observed with the naked eye. When the size of the peeling piece was larger than that of Comparative Example 1, Quot ;, and when it is smaller than that of Comparative Example 1, it was evaluated as 'x'.
첨부 도 3는 비교예 1 및 비교예 19와 실시예 12의 박리액을 사용하여 회수한 DFR 박리편을 비교 촬영한 사진이다. 실시예 12의 박리액을 사용했을 때 비교예 1 및 비교예 19의 경우보다 DFR 박리편이 조대하여 박리편의 회수가 훨씬 용이한 것으로 확인되었다.3 is a photograph of a DFR peeled piece recovered using the peeling solution of Comparative Example 1, Comparative Example 19, and Example 12 in comparison. It was confirmed that the DFR peeled-off piece was much easier to recover the peeling-off piece than the comparative example 1 and the comparative example 19 when the peeling solution of Example 12 was used.
Claims (6)
수산화나트륨, 수산화테트라메틸암모늄, 수산화칼륨, 수산화마그네슘, 2-하이드록시 에틸트리메틸암모늄 하이드록사이드 중에서 선택된 하나 이상의 알칼리화합물 0.5~3 중량%;
벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 피라졸, 테트라졸, 이미다졸 중에서 선택된 하나 이상의 아졸화합물 0.01~0.1 중량%;
에틸렌글리콜 페닐에테르, 에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노부틸에테르, 벤질알코올, 디에틸렌글리콜 모노벤질에테르, 에틸렌글리콜 모노메틸에테르 중에서 선택된 하나 이상의 솔벤트 1~5 중량%;
그리고 물 82~97 중량%;
로 이루어진 것을 특징으로 하는 포토레지스트 박리액 조성물.
1 to 10% by weight of at least one amine compound selected from triethanolamine, benzylamine, monoethanolamine, dimethylethanolamine and ethylenediamine;
0.5 to 3% by weight of at least one alkali compound selected from sodium hydroxide, tetramethylammonium hydroxide, potassium hydroxide, magnesium hydroxide and 2-hydroxyethyltrimethylammonium hydroxide;
0.01 to 0.1% by weight of at least one azole compound selected from benzotriazole, 5-methylbenzotriazole, tolyltriazole, pyrazole, tetrazole and imidazole;
1 to 5% by weight of at least one solvent selected from the group consisting of ethylene glycol phenyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, benzyl alcohol, diethylene glycol monobenzyl ether and ethylene glycol monomethyl ether;
And 82-97 wt% water;
≪ / RTI >
The photoresist stripper composition according to claim 1, wherein the amine compound is monoethanolamine.
The photoresist stripper composition according to claim 1 or 2, wherein the alkaline compound is potassium hydroxide.
The photoresist stripper composition according to claim 1 or 2, wherein the azole compound is pyrazole.
The photoresist stripper composition according to claim 1 or 2, wherein the solvent is benzyl alcohol.
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KR20190120996A (en) * | 2018-04-17 | 2019-10-25 | 엘티씨 (주) | Liquid stripper composition for dryfilm resist |
CN113741159A (en) * | 2021-08-27 | 2021-12-03 | 漳州思美科新材料有限公司 | PI film stripping liquid and preparation method and stripping method thereof |
CN114207529A (en) * | 2019-07-30 | 2022-03-18 | 三菱瓦斯化学株式会社 | Composition for removing photoresist |
KR20230072123A (en) * | 2021-11-17 | 2023-05-24 | 삼영순화(주) | Eco-friendly photoresist stripper composition |
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EP1729179A1 (en) | 2005-06-03 | 2006-12-06 | Atotech Deutschland Gmbh | Method for fine line resist stripping |
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KR20190120996A (en) * | 2018-04-17 | 2019-10-25 | 엘티씨 (주) | Liquid stripper composition for dryfilm resist |
CN110622071A (en) * | 2018-04-17 | 2019-12-27 | Ltc有限公司 | Dry film photoresistance stripping liquid composition |
CN114207529A (en) * | 2019-07-30 | 2022-03-18 | 三菱瓦斯化学株式会社 | Composition for removing photoresist |
CN113741159A (en) * | 2021-08-27 | 2021-12-03 | 漳州思美科新材料有限公司 | PI film stripping liquid and preparation method and stripping method thereof |
CN113741159B (en) * | 2021-08-27 | 2024-05-17 | 漳州思美科新材料有限公司 | PI film stripping liquid, preparation method thereof and stripping method |
KR20230072123A (en) * | 2021-11-17 | 2023-05-24 | 삼영순화(주) | Eco-friendly photoresist stripper composition |
WO2023090714A1 (en) * | 2021-11-17 | 2023-05-25 | 삼영순화(주) | Eco-friendly photoresist stripper composition |
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