KR20160048397A - Method of fabricating semiconductor device and apparatus of fabricating the same - Google Patents

Abstract

The present invention relates to a method and an apparatus of fabricating a semiconductor device to improve uniformity. Provided is the method of fabricating a semiconductor device which includes a first step of forming a first thin film pattern on a substrate; a second step of measuring the critical dimension uniformity (CD) of the first thin film pattern; a third step of feed-backing information including the CD uniformity of the first thin film pattern and controlling a gap between the substrate and a showerhead by vertically moving a substrate support, which is a previous step for forming a second thin film for correcting the CD uniformity of the first thin film pattern; and a fourth step of forming the second thin film on the first thin film pattern.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device,

The present invention relates to a method and an apparatus for manufacturing a semiconductor device, and more particularly, to a method and apparatus for manufacturing a semiconductor device capable of improving uniformity.

As a semiconductor device is highly integrated, a pattern having a fine line width is required. However, it is very difficult to form a fine pattern having a certain size or smaller on the limit of the developed and commercialized exposure equipment. Accordingly, a DPT (Double Patterning Technology) process technology has been proposed in order to realize a pattern having a minute line width while using the currently commercialized exposure equipment as it is. On the other hand, in order to improve the productivity of semiconductor devices, it is required to increase the size of the wafer, and the uniformity of the process over the entire wafer has become an important issue. In recent years, uniformity of patterning has become an important issue in realizing a DPT process on a wafer of a large diameter.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method and an apparatus for manufacturing a semiconductor device capable of improving uniformity. However, these problems are exemplary and do not limit the scope of the present invention.

A method of manufacturing a semiconductor device according to one aspect of the present invention for solving the above problems is provided. The method includes: a first step of forming a first thin film pattern on a substrate; A second step of measuring critical dimension uniformity (CD) of the first thin film pattern; The method of claim 1, wherein the first thin film pattern is formed on a surface of the first thin film pattern to compensate for CD uniformity of the first thin film pattern. The substrate support table is moved up and down by receiving feedback on CD uniformity of the first thin film pattern, A third step of adjusting; And a fourth step of forming the second thin film on the first thin film pattern.

The method for fabricating a semiconductor device may include a step of forming a second thin film pattern in the form of a spacer on the side of the first thin film pattern by performing a front side etching process (for example, an etch back process) Step 5; And a sixth step of removing the first thin film pattern. Wherein the first step, the fourth step, the fifth step and the sixth step are part of a double patterning technology.

Wherein the first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern includes a plurality of line and space patterns in the plurality of line and space patterns, The third step includes the step of determining that the thickness of the substrate at the center of the substrate is larger than the thickness at the substrate edge when the line average width at the center of the substrate is smaller than the line average width at the substrate edge, Wherein the distance between the substrate and the showerhead is smaller as the line average width at the center of the substrate constituting the first thin film pattern is smaller than the line average width at the edge of the substrate And a step of setting the step. Here, as the distance between the substrate and the showerhead is set smaller, the thickness of the second thin film at the center of the substrate becomes larger than the thickness at the substrate edge.

Wherein the first thin film pattern includes a plurality of line and space patterns, and the information reflecting the CD uniformity of the first thin film pattern includes a plurality of line and space patterns in the plurality of line and space patterns, Wherein the third step includes the step of determining that the line average width at the center of the substrate is greater than the line average width at the substrate edge, The distance between the substrate and the showerhead is set larger as the line average width at the center of the substrate constituting the first thin film pattern is larger than the line average width at the edge of the substrate Step < / RTI > Here, as the distance between the substrate and the showerhead is set larger, the thickness of the second thin film at the center of the substrate becomes smaller than the thickness at the substrate edge.

An apparatus for manufacturing a semiconductor device according to another aspect of the present invention for solving the above problems is provided. The apparatus for fabricating a semiconductor device is a device for manufacturing a semiconductor device for forming a second thin film that compensates for CD uniformity of the first thin film pattern on a substrate on which a first thin film pattern has already been formed, A deposition chamber having a support and a showerhead to which a source gas and a reactive gas are supplied; And a controller which controls the interval between the shower head and the substrate by moving the substrate support vertically by receiving feedback on information about the CD uniformity of the first thin film pattern. Respectively.

According to some embodiments of the present invention as described above, it is possible to provide a method and apparatus for manufacturing a semiconductor device capable of improving CD uniformity. Of course, the scope of the present invention is not limited by these effects.

1 is a flow chart illustrating a method of manufacturing a semiconductor device according to some embodiments of the present invention.
2 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to a method in accordance with an embodiment of the present invention.
3 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to another embodiment of the present invention.
4 is a schematic diagram illustrating a configuration for an apparatus for manufacturing a semiconductor device that performs a method according to some embodiments of the present invention.

Hereinafter, various embodiments of the present invention will be described by way of example with reference to the accompanying drawings.

It is to be understood that throughout the specification, when an element such as a film, a pattern, a region, or a substrate is referred to as being "on" another element, the element is directly "on" , There may be other components intervening therebetween. On the other hand, when an element is referred to as being "directly on" another element, it is understood that there are no other elements intervening therebetween.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing. Further, the thickness and the size of each layer in the drawings may be exaggerated for convenience and clarity of explanation. Like numbers refer to like elements.

In some embodiments of the present invention, the method of forming a thin film may be implemented by chemical vapor deposition (CVD) or atomic layer deposition (ALD). Particularly, in the atomic layer deposition method, not only the time division method in which the deposition is realized by discontinuously supplying the source gas and the reaction gas into the reactor in which the substrate is disposed, but also the source gas and the reactive gas are spatially separated, The deposition may be achieved by sequentially moving the substrate within the system.

1 is a flow chart illustrating a method of manufacturing a semiconductor device according to some embodiments of the present invention.

Referring to FIG. 1, a method of manufacturing a semiconductor device according to some embodiments of the present invention includes a first step (S100) of forming a first thin film pattern on a substrate; A second step (S200) of measuring critical dimension uniformity of the first thin film pattern; The method of claim 1, wherein the first thin film pattern is formed on a surface of the first thin film pattern to compensate for CD uniformity of the first thin film pattern. The substrate support table is moved up and down by receiving feedback on CD uniformity of the first thin film pattern, (S300); And a fourth step (S400) of forming the second thin film on the first thin film pattern.

A detailed description thereof will be given later with reference to Fig.

FIG. 2 is a sectional view sequentially illustrating a DPT process for manufacturing a semiconductor device according to a method according to an embodiment of the present invention.

Referring to FIG. 2 (a), a target film 20 is formed on a substrate 10. The substrate 10 may include, for example, a semiconductor substrate, a conductive substrate, or an insulating substrate. The first thin film 30 is formed on the target film 20.

Referring to FIG. 2B, the first thin film 30a is formed by patterning the first thin film 30, and the CD uniformity of the first thin film pattern 30a is measured. An ideal CD uniformity (100%) is realized when the dimensions and / or pitch of the repeated sub-patterns constituting the first thin film pattern 30a are uniform over the entire area from the wafer center to the edge. However, in the actual process, the CD uniformity of the first thin film 30a is less than 100% due to the thickness uniformity of the first thin film 30 and the uniformity of the patterning process of the first thin film 30. [

The first thin film pattern 30a may include a plurality of line and space patterns. In this case, the information on the measurement of the CD uniformity of the first thin film pattern 30a can be obtained, for example, in the case where the line average width at the center of the substrate in the plurality of line- Edge < / RTI > The line average width can be understood as an average value of the bar dimension (bar CD) of the line and space pattern.

For example, among the line patterns constituting the first thin film pattern 30a, the line average width B1 at the center of the substrate is relatively small and the line average width B3 at the substrate edge can be relatively large (B3 > B1) . In this case, the width of the space pattern constituting the first thin film pattern 30a may be larger at the center of the substrate than at the substrate edge (S1 > S2).

Referring to FIG. 2 (c), a second thin film 40 is formed on the first thin film pattern 30a. The second thin film 40 may have a thickness distribution that compensates for the CD uniformity of the first thin film pattern 30a. For example, the thickness of the second thin film 40 may be greater than the substrate edge (T1> T2) at the center of the substrate. According to this, the second thin film 40, which is relatively thick, is formed in a region where the interval is relatively large among the space patterns constituting the first thin film pattern 30a, In this relatively narrow region, a relatively thin second thin film 40 is formed, so that the space C1 can be relatively uniformly implemented over the entire surface of the substrate.

Referring to FIG. 2 (d), the second thin film pattern 40a may be formed on the side of the first thin film pattern 30a by performing a front side etching process on the second thin film 40. FIG. The second thin film pattern 40a may have a spacer shape.

Referring to FIG. 2 (e), the first thin film pattern 30a is selectively removed. In this case, only the second thin film pattern 40a on the object film 20 can serve as a mask in the subsequent etching process.

Referring to FIG. 2 (f), the target film 20 is etched by using the second thin film pattern 40a as a hard mask to form the target film pattern 20a.

Referring to FIG. 2 (g), the second thin film pattern 40a may be removed to realize a target film pattern 20a that is relatively uniformly distributed on the substrate 10. It can be confirmed that the CD uniformity of the target film pattern 20a is better than the CD uniformity of the first thin film pattern 30a. For example, among the line patterns constituting the target film pattern 20a, the line average width B4 at the center of the substrate is relatively large and the line average width B5 at the substrate edge is relatively small. However, It can be seen that the uniformity deviation of the target film pattern 20a is smaller than the uniformity deviation of the first thin film pattern 30a. This effect is realized by adjusting the thickness uniformity of the second thin film 40 to compensate for the uniformity of the first thin film pattern 30a.

3 is a cross-sectional view sequentially illustrating a DPT process for manufacturing a semiconductor device by a method according to another embodiment of the present invention. Hereinafter, differences will be mainly described with reference to the portions described with reference to FIG.

Referring to FIG. 3 (a), a target film 20 is formed on a substrate 10. Referring to FIG. 3 (b), the first thin film 30a is formed by patterning the first thin film 30, and the CD uniformity of the first thin film pattern 30a is measured.

The first thin film pattern 30a may include a plurality of line and space patterns. In this case, the information on the measurement of the CD uniformity of the first thin film pattern 30a can be obtained, for example, in the case where the line average width at the center of the substrate in the plurality of line- Edge < / RTI > The line average width can be understood as an average value of the bar dimension (bar CD) of the line and space pattern.

For example, among the line patterns constituting the first thin film pattern 30a, the line average width B1 at the center of the substrate is relatively large and the line average width B3 at the substrate edge may be relatively small (B3 <B1) . In this case, the width of the space pattern constituting the first thin film pattern 30a may be smaller at the center of the substrate than the substrate edge (S1 < S2).

Referring to FIG. 3 (c), a second thin film 40 is formed on the first thin film pattern 30a. The second thin film 40 may have a thickness distribution that compensates for the CD uniformity of the first thin film pattern 30a. For example, the thickness of the second thin film 40 may be smaller (T1 < T2) than the substrate edge (Center) at the substrate center. According to this, the second thin film 40, which is relatively thick, is formed in a region where the interval is relatively large among the space patterns constituting the first thin film pattern 30a, In this relatively narrow region, a relatively thin second thin film 40 is formed, so that the space C2 can be relatively uniformly implemented over the entire surface of the substrate.

Referring to FIG. 3 (d), a second thin film pattern 40a may be formed on the side of the first thin film pattern 30a by performing a front etching process on the second thin film 40. FIG. The second thin film pattern 40a may have a spacer shape.

Referring to FIG. 3 (e), the first thin film pattern 30a is selectively removed. In this case, only the second thin film pattern 40a on the object film 20 can serve as a mask in the subsequent etching process. Referring to FIG. 3 (f), the target film 20 is etched by using the second thin film pattern 40a as a hard mask to form the target film pattern 20a.

Referring to FIG. 3 (g), the second thin film pattern 40a may be removed to realize the target film pattern 20a that is relatively uniformly distributed on the substrate 10. It can be confirmed that the CD uniformity of the target film pattern 20a is better than the CD uniformity of the first thin film pattern 30a. For example, among the line patterns constituting the target film pattern 20a, the line average width B4 at the center of the substrate is relatively small and the line average width B5 at the substrate edge is relatively large. However, It can be seen that the uniformity deviation of the target film pattern 20a is smaller than the uniformity deviation of the first thin film pattern 30a. This effect is realized by adjusting the thickness uniformity of the second thin film 40 to compensate for the uniformity of the first thin film pattern 30a.

Meanwhile, as a method for adjusting the thickness uniformity of the second thin film 40 to compensate for the uniformity of the first thin film pattern 30a, the technical idea of the present invention is a step for forming the second thin film 40 , The step of adjusting the distance between the showerhead and the substrate by introducing the step of moving the substrate support vertically by receiving feedback on the CD uniformity of the first thin film pattern 30a. This will be described with reference to FIG. 4, which schematically illustrates a configuration for an apparatus for manufacturing a semiconductor device that performs a method according to some embodiments of the present invention.

The thin film forming apparatus 100 may include a deposition chamber 140 and a control unit 180. The thin film deposition apparatus 100 may be a thin film deposition apparatus,

The deposition chamber 140 may include a substrate support 160 and a showerhead 150. The substrate support 160 can be varied in height (DELTA H) in the deposition chamber 140 up and down. The substrate 10 on which the thin film structure 60 is formed may be disposed on the substrate support 160. The thin film structure 60 may include the target film 20 and the first thin film pattern 30a shown in FIG. 2 (b) or FIG. 3 (b). The showerhead 150 can supply the source gas and the reactive gas to the deposition chamber 140. The control unit 180 receives information on the CD uniformity of the first thin film pattern 30a and controls the thickness of the second thin film 40 to be formed on the first thin film pattern 30a, And the showerhead 150 can be set.

A substrate supporting table 160 may be formed at a lower portion of the deposition chamber 140 to specifically design the semiconductor device manufacturing apparatus 100. The substrate 10 on which the first thin film pattern 30a has already been formed on the substrate support 160 can be disposed. A showerhead 150 capable of supplying a source gas and a reactive gas capable of forming the second thin film 40 on the deposition chamber 140 may be formed.

The source gas may be appropriately selected depending on the kind of the thin film to be formed. For example, when the thin film to be formed is a silicon oxide film, the source gas may be SiH ₄ , SiCl ₄ , Si ₂ Cl ₆ , Si (NO ₂ ) ₄ , Si (N ₂ O ₂ ) ₂ , SiF ₄ , SiF ₆ Or Si (CNO) ₄ . Other source gases include Si and H mixtures, Si and N mixtures, Si and F mixtures, Si and O mixtures, Si, N and O mixtures. Of course, the types of the thin film and the source gas described above are illustrative, and the technical idea of the present invention is not limited to these kinds of exemplary materials.

Further, the reaction gas can be appropriately selected depending on the kind of the thin film to be formed. For example, when the thin film to be formed is a silicon oxide film, the reactive gas may include O ₂ . Of course, the types of the thin film and the reactive gas described above are exemplary, and the technical idea of the present invention is not limited to the types of these exemplary materials.

The substrate support 160 may include a driver 170 at the center of the substrate support 160 so that the substrate support 160 may move upward and downward within the deposition chamber 140. Although the driving unit 170 is illustrated as being formed at the center of the substrate support 160, the driving unit 170 may be designed to vary its position in order to control the size of the substrate 10 and the thickness uniformity of the thin film to be deposited. The driving unit 170 may be designed to rotate to adjust the thickness uniformity of the thin film to be deposited. In addition, the substrate support 160 may further include a heater.

The semiconductor device manufacturing apparatus 100 may further include a control unit 180 that can control an interval between the substrate support 160 and the shower head 150 in association with the driving unit 170. The controller 180 controls the substrate support table 160 and the shower head 160 corresponding to the CD uniformity of the first thin film pattern 30a so as to form the second thin film 40 that compensates for the CD uniformity of the first thin film pattern 30a. And a database storing predetermined interval information between the first and second processors 150.

2 and 4, in the first thin film pattern 30a composed of a plurality of line and space patterns, the line average width B1 at the center of the substrate is smaller than the line average width ( The thickness T1 at the center of the substrate is greater than the thickness T2 at the substrate edge by setting the distance between the substrate 10 and the showerhead 150 to be smaller than the reference interval, The thin film 40 can be formed. Here, the reference interval means the interval between the substrate 10 and the showerhead 150, from which the second thin film having a uniform thickness from the center to the edge of the substrate can be formed. On the other hand, in the first thin film pattern 30a composed of a plurality of line and space patterns, the line average width at the center of the substrate is smaller than the line average width at the substrate edge, (150) can be set smaller.

3 and 4, in the first thin film pattern 30a composed of a plurality of line and space patterns, the line average width B1 at the center of the substrate is smaller than the line average width ( The thickness T1 at the center of the substrate is smaller than the thickness T2 at the substrate edge by setting the interval between the substrate 10 and the showerhead 150 to be larger than the reference interval, The thin film 40 can be formed. Here, the reference interval means the interval between the substrate 10 and the showerhead 150, from which the second thin film having a uniform thickness from the center to the edge of the substrate can be formed. On the other hand, in the first thin film pattern 30a composed of a plurality of line and space patterns, the line average width at the center of the substrate is larger than the line average width at the substrate edge, 150 can be set to be larger.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: substrate
30a: first thin film pattern
40: second thin film
140: deposition chamber
150: Shower head
160: substrate support
170:
180:

Claims (7)

A first step of forming a first thin film pattern on a substrate;
A second step of measuring critical dimension uniformity (CD) of the first thin film pattern;
The method of claim 1, wherein the first thin film pattern is formed of a first thin film and a second thin film to compensate for CD uniformity of the first thin film pattern. The substrate support is moved up and down by receiving information reflecting the CD uniformity of the first thin film pattern, A third step of adjusting; And
A fourth step of forming the second thin film on the first thin film pattern;
Wherein the semiconductor device is a semiconductor device. The method according to claim 1,
Wherein the first thin film pattern includes a plurality of line and space patterns and the information reflecting the CD uniformity of the first thin film pattern includes a line average width in the center of the substrate in the plurality of line and space patterns Is less than the line average width at the substrate edge,
Wherein the third step is a step for forming the second thin film having a thickness at the center of the substrate larger than the thickness at the edge of the substrate, the line average width at the center of the substrate constituting the first thin film pattern Wherein a distance between the substrate and the showerhead is smaller than a line average width at the substrate edge.
A method of manufacturing a semiconductor device. The method according to claim 1,
Wherein the first thin film pattern includes a plurality of line and space patterns and the information reflecting the CD uniformity of the first thin film pattern includes a line average width in the center of the substrate in the plurality of line and space patterns Is greater than the line average width at the substrate edge,
Wherein the third step is a step for forming the second thin film having a thickness at the center of the substrate being smaller than a thickness at the edge of the substrate, the line average width at the center of the substrate constituting the first thin film pattern And setting the gap between the substrate and the showerhead to be greater as the line average width at the substrate edge is greater than the line average width at the substrate edge.
A method of manufacturing a semiconductor device. The method according to claim 1,
A fifth step of forming a second thin film pattern in the form of a spacer on the side of the first thin film pattern by performing a front side etching process on the second thin film; And a sixth step of removing the first thin film pattern. Further comprising:
Wherein the first step to the sixth step are part of a double patterning technology. There is provided an apparatus for manufacturing a semiconductor device which forms a second thin film which compensates for CD uniformity of the first thin film pattern on a substrate on which a first thin film pattern has already been formed,
A deposition chamber having a substrate support vertically adjustable in height and a showerhead to which a source gas and a reactive gas are supplied; And
A controller which controls the interval between the showerhead and the substrate by moving the substrate support vertically by receiving information reflecting the CD uniformity of the first thin film pattern;
And a semiconductor element. 6. The method of claim 5,
Wherein the first thin film pattern includes a plurality of line and space patterns and the information reflecting the CD uniformity of the first thin film pattern includes a line average width in the center of the substrate in the plurality of line and space patterns Is less than the line average width at the substrate edge,
Wherein the controller is configured to determine a line average width at the center of the substrate constituting the first thin film pattern at the substrate edge so as to form the second thin film whose thickness at the center of the substrate is larger than the thickness at the substrate edge, The distance between the substrate and the showerhead is set to be smaller as the line width is smaller than the line average width of the showerhead.
A device for manufacturing a semiconductor device. 6. The method of claim 5,
Wherein the first thin film pattern includes a plurality of line and space patterns and the information reflecting the CD uniformity of the first thin film pattern includes a line average width in the center of the substrate in the plurality of line and space patterns Is greater than the line average width at the substrate edge,
Wherein the controller is configured to determine a line average width at the center of the substrate constituting the first thin film pattern at the substrate edge so as to form the second thin film whose thickness at the center of the substrate is smaller than the thickness at the substrate edge, The interval between the substrate and the showerhead is set to be larger,
A device for manufacturing a semiconductor device.

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