KR20150116003A - Apparatus, system, and metho for treating substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, and a substrate processing apparatus according to an embodiment of the present invention includes a housing having an opening through which a substrate enters and exits on one side, a gas supplying unit that supplies gas into the housing, A door for opening and closing the opening, and a controller for controlling driving of the door, wherein the controller removes the first substrate from the housing when the door is opened And measuring a pressure with the sensor unit and setting a reference value as a reference value; measuring a pressure with the sensor unit after the predetermined process is performed on the second substrate in the housing to compare the measurement value with the reference value, Can be determined.

Description

TECHNICAL FIELD [0001] The present invention relates to a substrate processing apparatus, a substrate processing apparatus,

The present invention relates to a substrate processing apparatus, a substrate processing apparatus, and a substrate processing method using the same.

Various processes are required for manufacturing semiconductor devices. For example, an etching process for removing the thin film on the substrate, an ashing process for removing the photoresist film remaining on the substrate, and a cleaning process for removing the by-products and particles remaining in the edge region of the substrate or the rear region of the substrate are sequentially performed do.

The chamber in which such a process is performed has a door member so that the substrate is brought in for the process to be carried out and the substrate is taken out after the process is performed. The existing door member is opened based on whether or not the pressure inside the chamber is normal pressure. Therefore, when the pressure outside the substrate processing apparatus is changed, noise and vibration are generated when the door is opened due to a pressure difference between the inside and the outside of the chamber. Vibration can cause particles in the chamber and can damage the substrate.

It is an object of the present invention to provide a substrate processing apparatus capable of minimizing noise due to a pressure difference between the inside and the outside of the chamber when the chamber is opened.

Another object of the present invention is to provide a substrate processing apparatus capable of minimizing generation of vibrations and generation of particles due to a pressure difference between the inside and the outside of the chamber when the chamber is opened.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus.

A substrate processing apparatus according to an embodiment of the present invention includes a housing having an opening through which a substrate enters and exits on one side, a gas supply unit that supplies gas into the housing to increase the pressure inside the housing, And a controller for controlling driving of the door, wherein the controller is configured to take out the first substrate from the housing when the door is opened, and simultaneously measure the pressure with the sensor unit The controller may determine the opening of the door by comparing the measured value with the reference value by measuring the pressure with the sensor unit after processing the predetermined process on the second substrate in the housing.

The controller may open the door when the measured value reaches the reference value.

The substrate may be grouped into a plurality of groups, the first substrate belonging to the first group and the second substrate belonging to the second group, and the first group may be processed before the second group.

One substrate may belong to each group.

The chamber may perform the process in a vacuum atmosphere, and the outside of the chamber may be provided at atmospheric pressure.

The controller may have a predetermined lower limit pressure value and compare the reference value with the measured value when the measured value exceeds the lower limit pressure value.

The lower limit pressure value may be a pressure value of about 450 mmHg to about 500 mmHg.

The controller may open the door when the measured value reaches an upper pressure value.

The upper limit pressure value may be a pressure value of about 800 mmHg to about 900 mmHg.

The present invention also provides a substrate processing facility.

In a substrate processing facility having a facility front end module and a process processing chamber according to an embodiment of the present invention, the facility front end module includes a transfer frame having a load port and a first transfer robot for transferring the substrate, Wherein the processing chamber includes a buffer stage disposed adjacent to the transfer frame, a second transfer chamber provided adjacent to the buffer stage and including a second transfer robot for transferring the substrate, and a second transfer chamber disposed adjacent to the second transfer chamber A gas supply unit for supplying a gas into the housing to increase a pressure inside the housing; a pressure sensor for detecting a pressure inside the housing; A door for opening and closing the opening, and a controller for controlling driving of the door, The controller controls the controller to move the first substrate out of the housing when the door is opened, measure the pressure with the sensor unit to set a reference value, process a predetermined process on the second substrate in the housing, And comparing the measured pressure value with the reference value to determine whether the door is opened or closed.

The controller may open the door when the measured value reaches the reference value.

The substrate may be grouped into a plurality of groups, the first substrate belonging to the first group and the second substrate belonging to the second group, and the first group may be processed before the second group.

One substrate may belong to each group.

The process chamber performs a process in a vacuum atmosphere, and the outside of the process chamber can be provided at normal pressure.

The controller may have a predetermined lower limit pressure value and compare the reference value with the measured value when the measured value exceeds the lower limit pressure value.

The controller may open the door when the measured value reaches an upper pressure value.

The present invention also provides a substrate processing method.

The method of processing a substrate according to an embodiment of the present invention is a method for processing a substrate according to an embodiment of the present invention, comprising: opening a door to take out a first substrate from a housing; simultaneously measuring a pressure in the housing to set a reference value; The measured value measured by measuring the pressure in the housing may be compared with the reference value to open the door to take out the second substrate from the housing.

When the measured value reaches the reference value, the door can be opened.

The substrate may be grouped into a plurality of groups, the first substrate belonging to the first group and the second substrate belonging to the second group, and the first group may be processed before the second group.

According to the embodiments of the present invention, it is possible to provide a substrate processing apparatus capable of minimizing the noise caused by the pressure difference between the inside and the outside of the chamber when the chamber is opened.

In addition, the present invention can provide a substrate processing apparatus capable of minimizing generation of vibrations and generation of particles due to a pressure difference between the inside and the outside of the chamber when the chamber is opened.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
2 is a view showing the substrate processing apparatus of FIG.
3 is a flow chart showing the substrate processing sequence in sequence.
FIGS. 4 to 8 are views sequentially illustrating the substrate processing process according to FIG.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

1 is a plan view schematically showing a substrate processing apparatus 1 according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1 has an equipment front end module (EFEM) 20 and a process processing section 30.

The apparatus front end module 20 has a load port 10 and a transfer frame 21. [ The load port 10 is disposed in front of the facility front end module 20 in a first direction 11. The load port (10) has a plurality of support portions (6). Each of the supports 6 is arranged in a line in a second direction 12 perpendicular to the first direction 11 and includes a substrate W to be supplied to the process and a carrier 4) (eg, cassette, FOUP, etc.) is seated. The transfer frame 21 is disposed between the load port 10 and the processing chamber 30. The transfer frame 21 includes a first transfer robot 25 disposed therein and transferring the substrate W between the load port 10 and the processing unit 30. [ The first transfer robot 25 moves along the transfer rail 27 provided in the second direction 12 to transfer the substrate W between the carrier 4 and the processing chamber 30. [

The process chamber 30 includes a buffer stage 40, a second transfer chamber 50, and a process chamber 60.

The buffer stage 40 is disposed adjacent to the transfer frame 21. [ In one example, the buffer stage 40 may be disposed between the second transfer chamber 50 and the equipment front end module 20. The buffer stage 40 is provided with a space that waits before the substrate W to be supplied to the process is transferred to the process chamber 60 or before the processed wafer W is transferred to the equipment front end module 20. [ to provide.

A second transfer chamber (50) is disposed adjacent to the buffer stage (40). The second transfer chamber 50 may be provided in the transfer chamber 50. Hereinafter, the second transfer chamber 50 is referred to as a transfer chamber 50. The transfer chamber 50 has a polygonal body when viewed from the top. Referring to Figure 1, the transfer chamber 50 has a pentagonal body when viewed from the top. On the outside of the body, a buffer stage 40 and a plurality of process chambers 60 are arranged along the circumference of the body. Each side wall of the body is provided with a passage (not shown) through which the substrate W enters and exits, and the passage connects the transfer chamber 50 and the buffer stage 40 or the process chambers 60. Each passage is provided with a door (not shown) for opening and closing the passage to seal the inside thereof. A buffer stage 40 and a second transfer robot 53 for transferring the substrate W between the process chambers 60 are disposed in the inner space of the transfer chamber 50. The second transfer robot 53 transfers the unprocessed substrate W waiting in the buffer stage 40 to the process chamber 60 or transfers the processed substrate W to the buffer stage 40. Then, the substrate W is transferred between the process chambers 60 to sequentially provide the plurality of process chambers 60 with the substrates W. As shown in Figure 2, when the transfer chamber 50 has a pentagonal body, a buffer stage 40 is disposed on the side wall adjacent to the facility front end module 20, respectively, and the process chambers 60 are connected successively . The transfer chamber 50 may be provided in various forms depending on the shape, as well as the required process module.

The process chamber 60 is disposed along the periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. In each of the process chambers 60, the processing of the substrate W proceeds. The process chamber 60 transfers the substrate W from the second transfer robot 53 to process the substrate W and provides the processed substrate W to the second transfer robot 53. The process processes in each of the process chambers 60 may be different from each other. Hereinafter, the substrate processing apparatus 100 for performing the plasma process in the process chamber 60 will be described in detail.

Fig. 2 is a view showing the substrate processing apparatus 100 of Fig.

Referring to FIG. 2, the substrate processing apparatus 100 performs a predetermined process on the substrate W using plasma. In one example, the substrate processing apparatus 100 may etch the thin film on the substrate W. [ The thin film may be a variety of films such as a polysilicon film, a silicon oxide film, and a silicon nitride film. Further, the thin film may be a natural oxide film or a chemically generated oxide film.

The substrate processing apparatus 100 includes a housing 120, a plasma generating chamber 140, a support unit 200, a gas supply unit 300, a plasma source 400, And has a baffle 500 (baffle).

The housing 120 provides a space 121 through which the substrate W is processed by the plasma. The housing 120 has a space 121 open at the top. The housing 120 may be provided in a generally cylindrical shape. The side wall of the housing 120 is provided with an opening 121. The substrate W enters and exits the inside of the housing 120 through the opening 121. The opening 121 is opened and closed by an opening / closing member such as the door 132.

The housing 120 has a sensor portion 130, a door 132, and a controller 134. The sensor unit 130 is provided inside the housing 120. For example, the sensor unit 130 may be provided on one side wall of the housing 120. The sensor unit 130 measures the pressure inside the housing 120. The door 132 opens and closes the opening 121. The door 132 may be provided on an outer wall of the housing 120 corresponding to the opening 121.

The controller 134 controls the operation of the door 132. The controller 134 may measure the pressure in the housing 120 and control the opening of the door 132 according to the measured value. In one example, in the housing 120, the process is performed in a vacuum atmosphere. At this time, the outside of the housing 120 is provided at normal pressure.

The controller 134 sets a reference value (P _0), when the measured value reaches the reference value (P ₀₎ can open the door 132. For example, when the door 132 is opened, the controller 134 moves the first substrate W ₁ in the housing 120 out of the housing 120, simultaneously measures the pressure with the sensor unit 130, The measured value is set to the reference value (P ₀ ). After the process is performed on the second substrate W ₂ loaded into the housing 120, the pressure in the housing 120 is measured by the sensor unit 130. The controller 134 can compare the measured value at this time with the reference value P ₀ to determine whether or not the door 132 is opened. In one example, the controller 134 opens the door 132 when the measured value reaches the reference value P ₀ . When the door 132 is opened so that the second substrate W ₂ is carried out from the housing 120, the sensor unit 130 re-measures the pressure in the housing 120 and resets the measured value to the reference value P ₀ can do. Then, when the third substrate W ₃ is loaded, whether or not the door 132 is opened can be determined based on the reset reference value P ₀ . The first substrate W ₁ is divided into a first group G ₁ , the second substrate W ₂ is divided into a second group G ₂ , and the third substrate W ₃ ) may belong to the third group (G ₃ ). The substrate of the first group G ₁ may be processed before the substrate of the second group G ₂ and the substrate of the second group G ₂ may be processed before the substrate of the third group G ₃ . Each group may be composed of a plurality of substrates. Optionally, each group may comprise only one substrate.

The controller 134 can set the reference value P ₀ so that if the pressure inside the housing 120 is equal to the pressure outside the actual housing 120 even if the pressure outside the housing 120 is changed, Can be opened. Accordingly, it is possible to minimize the occurrence of vibration and noise due to the pressure difference between the inside and the outside of the housing 120. In addition, since the door 132 is opened and the sensor unit 130 in the housing 120 measures the pressure, a separate sensor unit may not be provided outside the process chamber 100.

In addition, the controller 134 may have a lower limit pressure value Pmin. The lower limit pressure value Pmin is provided in advance. The controller 134 may determine whether the door 132 is opened by comparing the measured value with the reference value P ₀ when the measured value exceeds the lower limit pressure value Pmin. In one example, the lower limit pressure value may be a pressure value of about 450 mmHg to about 500 mmHg.

Further, the controller 134 may have an upper limit pressure value Pmax. The upper limit pressure value Pmax is provided in advance. The controller 134 opens the door 132 when the measured value reaches the upper limit pressure value Pmax. For example, when the measured value reaches the upper limit pressure value Pmax, the door 132 can be opened immediately without comparing the measured value with the reference value P ₀ . In one example, the upper limit pressure value Pmax may be a pressure value of about 800 mmHg to about 900 mmHg.

An exhaust hole 124 is formed in the bottom surface of the housing 120. An exhaust line 126 is connected to the exhaust hole 124. The exhaust line 126 is provided with a pump 128. The pump 128 regulates the pressure in the housing 120 to process pressure. The residual gas in the housing 120 and the reaction by-products are discharged to the outside of the housing 120 through the exhaust line 126. A wall heater 129 may be provided outside the housing 120. The wall heater 129 may be provided in a coil shape. Optionally, a wall heater 129 may be provided inside the outer wall of the process chamber 100.

The plasma generating chamber 140 provides a space 149 from which plasma is generated from the process gas. The plasma generating chamber 140 is located outside the housing 120. According to an example, the plasma generating chamber 140 is positioned on the upper portion of the housing 120 and is coupled to the housing 120. The plasma generating chamber 140 has a gas port 142, a discharge chamber 144, and a diffusion chamber 146. The gas port 142, the discharge chamber 144, and the diffusion chamber 146 are sequentially provided in a direction from top to bottom. The gas port 142 is supplied with gas from the outside. The discharge chamber 144 has a hollow cylindrical shape. The space 149 in the discharge chamber 144 is provided narrower than the space 121 in the housing 120 when viewed from above. Plasma is generated from the gas in the discharge chamber 144. The diffusion chamber 146 supplies the plasma generated in the discharge chamber 144 to the housing 120. The space in the diffusion chamber 146 has a gradually widening portion as it goes downward. The lower end of the diffusion chamber 146 is engaged with the upper end of the housing 120, and a sealing member (not shown) is provided therebetween for sealing against the outside.

The process chamber 100 is provided with a conductive material. The process chamber 100 may be grounded via a ground line 123. The housing 120 and the plasma generation chamber 140 may both be made of a conductive material. For example, the housing 120 and the plasma generation chamber 140 may be made of aluminum.

The support unit 200 supports the substrate W. [ The support unit 200 has a support plate 220 and a support shaft 240. The support plate 220 is disposed in the space 121 and is provided in a disc shape. The support plate 220 is supported by a support shaft 240. The substrate W is placed on the upper surface of the support plate 220. An electrode (not shown) is provided inside the support plate 220, and the substrate W can be supported on the substrate W by an electrostatic force. A heating member 222 may be provided inside the support plate 220. According to one example, the heating member 222 may be provided as a hot wire. Further, a cooling member 224 may be provided inside the support plate 220. The cooling member 224 may be provided as a cooling line through which cooling water flows. The heating member 222 heats the substrate W to a predetermined temperature and the cooling member 224 cools the substrate W. [

The gas supply unit 300 has a first gas supply member 320 and a second gas supply member 340.

The first gas supply member 320 has a first gas supply line 322 and a first gas storage unit 324. The first gas supply line 322 is coupled to the gas port 142. The first gas supplied through the gas port 142 flows into the discharge chamber 144 and is excited into the plasma in the discharge chamber 144. The first gas may include oxygen (O2), nitrogen (N2), and nitrogen (CH2F2). Optionally, the first gas may further comprise other types of gases such as CF4 (tetrafluoromethane).

The second gas supply member 340 has a second gas supply line 342 and a second gas storage 344. The second gas is supplied on the path of the plasma generated from the first gas to the housing 120. According to one example, the second gas supply line 342 is coupled to the discharge chamber 144 in a region below the antenna 420 described later. The second source gas may include nitrogen trifluoride (NF3).

Due to the above-described structure, the first gas is directly excited by the electric power to the plasma, and the second gas is excited to the plasma by the reaction with the first gas.

In the above-described example, the types of the first gas and the second gas may be variously changed. Further, only the first gas supply member 320 can be provided without providing the second gas supply member 340. [

The plasma source (400) generates a plasma from the first gas in the discharge chamber (144). According to one example, the plasma source 400 may be an inductively coupled plasma source 400. The plasma source 400 has an antenna 420 and a power supply 440. The antenna 420 is provided outside the discharge chamber 144 and is provided to surround the discharge chamber 144 a plurality of times. One end of the antenna 420 is connected to the power supply 440, and the other end is grounded. The power source 440 applies power to the antenna 420. According to an example, the power source 440 may apply a high frequency power to the antenna 420.

The baffle 500 is positioned between the housing 120 and the plasma generation chamber 140. The baffle 500 includes a baffle hole 522. The baffle 500 maintains the density and flow of the plasma uniformly throughout the entire area within the housing 120 as the plasma is supplied to the substrate W. [ The plasma may be supplied through the baffle hole 522. The baffle 500 is grounded. According to one example, baffle 500 may be provided to contact process chamber 100 and may be grounded through process chamber 100. Optionally, the baffle 500 may be connected directly to a separate ground line. Thus, the radicals are supplied to the housing 120 by the baffle 500, and ions and electrons are prevented from entering the housing 120. The baffle 500 is secured to the process chamber 100. According to one example, the baffle 500 may be coupled to the lower end of the plasma generating chamber 140.

FIG. 3 is a flow chart showing the process of the substrate W in sequence. FIGS. 4 to 8 are views sequentially showing the process of the substrate W. FIG.

First, the first substrate W ₁ is taken out from the process chamber 100. In this case, the first substrate W ₁ may be a substrate on which a predetermined process is performed in the process chamber 100. The first substrate W ₁ is taken out and the sensor unit 130 measures the pressure in the process chamber 100 (S110). The controller 134 sets the measured pressure value at this time to the reference value P ₀ (S120). Thereafter, the second substrate W ₂ is transferred into the process chamber 100, and the process is performed on the second substrate W ₂ (S 130). In one embodiment, the etching process is performed on the substrate (W _2). In the etching process, the film to be etched on the substrate W ₂ is removed. The film to be etched may be various kinds of films such as a polysilicon film, a silicon oxide film, a silicon nitride film, or a natural oxide film. When the process is completed, the pressure in the process chamber 100 is measured by the sensor unit 130 (S140). The controller 134 controls the opening of the door 132 based on the measured value measured by the sensor unit 130. If the measured value is greater than the lower limit pressure value Pmin, the controller 134 compares the measured value with the reference value P ₀ (S 150, S 160). In one example, the lower limit pressure value Pmin may be a pressure value of about 450 mmHg to about 500 mmHg. When the measured value reaches the reference value P ₀ , the controller 134 opens the door 132 to unload the second substrate W ₂ from the process chamber 100 (S 170). At this time, when the measured value reaches the upper limit pressure value Pmax, the door 132 can be opened immediately without comparing the measured value with the reference value P ₀ . In one example, the upper limit pressure value Pmax may be a pressure value of about 800 mmHg to about 900 mmHg. The controller 134 can set the reference value P ₀ so that the pressure difference between the inside and the outside of the housing 120 can be minimized even if the pressure outside the housing 120 is changed. Accordingly, it is possible to minimize the occurrence of vibration and noise due to the pressure difference between the inside and the outside of the housing 120.

In the above-described embodiments, the substrate processing step is described as performing the etching step. Alternatively, however, the substrate processing process can perform various processes other than the etching process. For example, an ashing process and a cleaning process can be performed. In addition, a plurality of processes can be performed. In one example, the substrate processing apparatus can perform an etching process, an ashing process, and a cleaning process.

In this embodiment, the process chamber is taken as an example, but it is also possible to determine whether to open the door 132 by setting the pressure measured by the sensor unit 130 as a reference value, to the transfer chamber 50 as well. In addition, the opening of the door 132 may be determined by setting the pressure measured by the sensor unit 130 as a reference value, and may be applied to a chamber in which the interior of the door 132 is maintained in vacuum.

In this embodiment, the substrate processing apparatus 100 includes the buffer stage 40. Alternatively, the substrate processing apparatus 100 may include a buffer chamber. Optionally, at this time, a buffer stage may be provided in the buffer chamber. In the buffer chamber, a plurality of buffer stages may be provided.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

20: Facility front end module 20: Process processing section
120: housing 121: opening
130: sensor unit 132: door
134: controller 140: plasma generating chamber
200: support unit 300: gas supply unit
400: plasma source 500: baffle

Claims (19)

A housing having an opening through which the substrate enters and exits on one side;
A gas supply unit for supplying gas into the housing to increase the pressure inside the housing;
A sensor unit for measuring a pressure inside the housing;
A door that opens and closes the opening; And
And a controller for controlling driving of the door,
Wherein the controller is configured to move the first substrate out of the housing when the door is opened and measure the pressure with the sensor unit at the same time to set the reference value as a reference value, to process a predetermined process on the second substrate in the housing, And determines whether the door is opened by comparing the measured value with the reference value. The method according to claim 1,
Wherein the controller opens the door when the measured value reaches the reference value. 3. The method of claim 2,
A plurality of substrates are grouped,
The first substrate belonging to the first group,
The second substrate belonging to the second group,
Wherein the first group is processed prior to the second group. The method of claim 3,
Wherein one substrate belongs to each group. 5. The method according to any one of claims 1 to 4,
Wherein the housing performs a process in a vacuum atmosphere, and the outside of the housing is provided at normal pressure. 6. The method of claim 5,
Wherein the controller has a predetermined lower limit pressure value and compares the measured value with the reference value when the measured value exceeds the lower limit pressure value. The method according to claim 6,
Wherein the lower limit pressure value is a pressure value of about 450 mmHg to about 500 mmHg. 6. The method of claim 5,
Wherein the controller opens the door when the measured value reaches an upper pressure value. 9. The method of claim 8,
Wherein the upper limit pressure value is a pressure value of about 800 mmHg to about 900 mmHg. 1. A substrate processing facility having a facility front end module and a processing chamber,
The facility front end module comprises:
Load port;
And a transfer frame in which a first transfer robot for transferring a substrate is disposed,
Wherein the processing chamber includes:
A buffer stage disposed adjacent to the transfer frame;
A second transfer chamber provided adjacent to the buffer stage and including a second transfer robot for transferring a substrate; And
A plurality of process chambers disposed around the second transfer chamber,
The process chamber includes:
A housing having an opening through which the substrate enters and exits on one side;
A gas supply unit for supplying gas into the housing to increase the pressure inside the housing;
A sensor unit for measuring a pressure inside the housing;
A door that opens and closes the opening; And
And a controller for controlling driving of the door,
Wherein the controller is configured to move the first substrate out of the housing when the door is opened, to measure the pressure with the sensor unit and to set the reference value as a reference value, to process a predetermined process on the second substrate in the housing, And comparing the measured value with the measured value to determine whether the door is opened. 11. The method of claim 10,
Wherein the controller opens the door when the measured value reaches the reference value. 12. The method of claim 11,
A plurality of substrates are grouped,
The first substrate belonging to the first group,
The second substrate belonging to the second group,
Wherein the first group is processed prior to the second group. 13. The method of claim 12,
Wherein one substrate belongs to each group. 14. The method according to any one of claims 10 to 13,
Wherein the process is performed in a vacuum atmosphere in the housing, and the outside of the housing is provided at atmospheric pressure. 15. The method of claim 14,
Wherein the controller has a predetermined lower limit pressure value and compares the measured value to the reference value when the measured value exceeds the lower limit pressure value. 15. The method of claim 14,
Wherein the controller opens the door when the measured value reaches an upper pressure value. A method for processing a substrate, the method comprising: opening a door to take out a first substrate from a housing, simultaneously measuring a pressure in the housing to set a reference value, processing the second substrate in the housing, And comparing the measurement value measured and measured with the reference value to open the door so that the second substrate is taken out from the housing. 18. The method of claim 17,
And opens the door when the measured value reaches the reference value. The method according to claim 17 or 18,
Wherein the substrate is grouped into a plurality of groups, the first substrate belongs to a first group, and the second substrate belongs to a second group, wherein the first group is processed before the second group.

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