KR20150044307A - Side type light emitting device package, backlight unit and its manufacturing method - Google Patents

Abstract

The present invention relates to side type light emitting device packages which can be applied to lighting devices and display devices and manufacturing method of backlight units and side type light emitting device package that comprises: a light emitting device in the form of a flip chip with the first terminal and the second terminal attached to a lower surface; a reflective member attached to an upper surface and at least one side surfaces of the light emitting device to induce light which is generated from the light emitting device toward the first side of the light emitting device.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a side-emitting type light emitting device package, a backlight unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a side-emitting type light emitting device package, a backlight unit and a method of manufacturing the side-emitting type light emitting device package, and more particularly to a side emitting type light emitting device package applicable to a lighting device or a display device, Unit and a method of manufacturing a side-emission type light emitting device package.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, has a strong directivity of light, and can be driven at a low voltage. Further, such an LED is resistant to impact and vibration, does not require preheating time and complicated driving, can be packaged in various forms, can be modularized for various purposes, and can be applied to various lighting devices and display devices.

The edge type light emitting device package widely used in the backlight unit is installed on the edge of the light guide plate, and the light emitting device is entirely mounted on the upper surface of the light emitting device, that is, .

However, when the upper surface of the light emitting device package is installed upright toward the side surface of the light guide plate, the width of the light emitting device having a length much longer than the thickness of the light emitting device generally increases the thickness of the backlight unit .

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a method of manufacturing a thin product, It is an object of the present invention to provide a side light emitting type light emitting device package that can greatly improve reliability and can be adapted to various lighting devices, display devices, and digital display devices, and a method of manufacturing a backlight unit and a side light emitting type light emitting device package . However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a side-emitting type light emitting device package including: a flip chip type light emitting device having a first terminal and a second terminal on a lower surface; And a reflective member installed along an upper surface and at least one side surface of the light emitting device so as to guide the light generated from the light emitting device toward the first side of the light emitting device.

According to an aspect of the present invention, the light emitting device is in the form of a hexahedron having an upper surface, a lower surface, a first side surface, a second side surface, a third side surface and a fourth side surface, An upper surface reflector provided on an upper surface of the device; And a side reflector formed along the second side surface and the third side surface and the fourth side surface of the light emitting device so that an outgoing opening can be formed on the first side surface of the light emitting device.

According to an aspect of the present invention, the reflective member may further include a substrate reflector formed along the lower surface of the light emitting device.

The light emitting device package of the present invention may further include a first phosphor disposed at the outgoing opening.

The light emitting device package may further include a second phosphor disposed between the light emitting device and the reflective member.

According to an aspect of the present invention, the reflective member includes at least an encapsulant including a light reflective material, a total reflection paste, an epoxy molding compound, a white silicone, a DBR (Distributed Bragg Reflector) ), A reflection protrusion, a reflection pattern, a metal reflection layer, and a combination thereof.

According to an aspect of the present invention, a DBR (Distributed Bragg Reflector) or a reflection pattern may be formed between the upper surface of the light emitting device and the reflective member.

According to another aspect of the present invention, there is provided a backlight unit comprising: a substrate; A flip chip type light emitting device mounted on the substrate and provided with a first terminal and a second terminal on a lower surface; A reflective member installed along an upper surface and at least one side surface of the light emitting device so as to guide light generated from the light emitting device toward a first side of the light emitting device; And a light guide plate disposed in a first direction of the light emitting device.

According to an aspect of the present invention, there is provided a method of manufacturing a side-emitting type light emitting device package, the method including preparing a flip chip type light emitting device having a first terminal and a second terminal on a lower surface thereof step; And providing a reflective member along an upper surface and at least one side surface of the light emitting device so as to guide light generated from the light emitting device toward a first side of the light emitting device.

According to an aspect of the present invention, the step of preparing the light emitting device may include forming a DBR (Distributed Bragg Reflector) or a reflection pattern on the light emitting device.

According to an aspect of the present invention, the step of providing the reflective member may include applying the reflective member to the light emitting device.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device, including the steps of: providing a phosphor on a light emitting device before installing the reflective member; And a step of molding the reflective member by supplying the reflective member resin so as to cover the outgoing opening, wherein after the step of installing the reflective member, the outgoing opening covered by the reflective member is exposed And cutting the cutting line so that the cutting line is cut.

According to some embodiments of the present invention as described above, the light emitted from the light emitting device can be guided in the lateral direction and can be installed in a laid-down condition without requiring a light emitting device to be installed, thereby making the product slimmer, , The heat generated from the chip can be smoothly discharged to the lower side of the product, thereby reducing thermal damage, improving the life and durability of the product, increasing the chip size without increasing the thickness of the product, , The reliability can be greatly improved and the sharpness is high, which is suitable for various lighting, display devices, and clear digital display devices. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating a side-emitting type light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view of a side-emitting type light emitting device package of FIG. 1 taken along line II-II.
3 is a cross-sectional view showing a III-III cross-sectional view of the side-emitting light emitting device package of FIG.
4 is a cross-sectional view illustrating a side-emitting type light emitting device package according to some embodiments of the present invention.
5 is a cross-sectional view illustrating a side-emitting type light emitting device package according to still another embodiment of the present invention.
6 is a cross-sectional view illustrating a side-emitting type light emitting device package according to still another embodiment of the present invention.
7 is a perspective view illustrating a backlight unit according to some embodiments of the present invention.
8 is a flowchart illustrating a method of manufacturing a side-emission type light emitting device package according to some embodiments of the present invention.
9 is a flowchart illustrating a method of manufacturing a side-emitting type light emitting device package according to some embodiments of the present invention.
FIGS. 10 to 12 are cross-sectional views illustrating steps of fabricating the side-emission type light emitting device package of FIG.
13 is a flowchart illustrating a method of manufacturing a side-emission type light emitting device package according to still another embodiment of the present invention.
FIGS. 14 to 17 are cross-sectional views illustrating steps of fabricating the side-emission type light-emitting device package of FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view showing a side-emitting type light emitting device package 100 according to some embodiments of the present invention. 3 is a cross-sectional view taken along line III-III of the side-emitting light emitting device package 100 of FIG. 1; and FIG. 3 is a cross- to be.

1 to 3, a side-emitting type light emitting device package 100 according to some embodiments of the present invention includes a substrate 10, a light emitting device 20, and a reflective member 30 ).

Herein, the substrate 10 is a substrate 10 which can receive the light emitting device 20 and is electrically connected to the light emitting device 20, It can be made of a material having a suitable mechanical strength and insulation and a conductive material so as to be able to support it.

For example, the substrate 10 may include various wiring layers to connect the light emitting device 20 with an external power source, and may include a printed circuit board (PCB) having a plurality of epoxy resin sheets formed thereon, Lt; / RTI > The substrate 10 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, the substrate 10 may be a synthetic resin substrate such as a resin or a glass epoxy or a ceramic substrate in consideration of a thermal conductivity. In addition, the substrate 10 may be formed of an insulating material such as aluminum, copper, zinc, tin, A metal substrate such as silver can be applied, and a plate or a lead frame substrate can be applied.

The substrate 10 may be made of at least one selected from EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof to improve workability have.

In addition, although not shown in the figure, the wiring layer may be provided in the form of a conductive layer pattern. The wiring layer may be made of at least one selected from copper, aluminum, and combinations thereof, which are excellent in thermal conductivity and relatively inexpensive materials.

At this time, such a pattern forming method may be thermocompression processing, plating processing, adhesive processing, sputtering processing, other etching processing, printing processing, spray processing and the like.

On the other hand, the substrate 10 can be manufactured as a module by mounting a plurality of the light emitting devices 20. To this end, the substrate 10 may be manufactured by forming electrodes on upper and lower portions of a substrate core material having insulation characteristics, conducting and sowing the electrodes.

At this time, the substrate core may be made of a material such as polyimide (PI), EMC, ceramic, graphene, silicon, or the like to have a thickness of about 15 to 20 μm Do.

In addition, an electrode having a thickness of about 65 to 70 mu m can be disposed on the substrate core using a material such as Cu, Al, Ag, or Au. Therefore, for example, when the substrate 10 is modularized, the thickness of the substrate 10 may be about 40%.

The light emitting device 20 may be a flip chip type LED having a first terminal B1 and a second terminal B2 which are electrically connected to the substrate 10 on the bottom surface.

Here, the light emitting device 20 can be mounted on the substrate 10, and FIG. 1 illustrates a state in which one light emitting device 20 is mounted on the substrate 10.

In addition, a plurality of light emitting devices 20 may be mounted on the substrate 10 as illustrated in FIG.

The light emitting device 20 may be formed of a semiconductor. For example, LEDs of blue, green, red, and yellow light emission, and LEDs of ultraviolet light emission, which are made of a nitride semiconductor, can be applied. The nitride semiconductor is represented by a general formula Al _x Ga _y In _z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The light emitting device 20 can be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. In addition, the light emitting device 20 can be selected to have an arbitrary wavelength depending on the application such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Here, the buffer layer may be made of Al _x In _y Ga _1-xy N (0? X? 1, 0? _Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

The first terminal B1 and the second terminal B2 of the light emitting device 20 have signal transmission media such as bumps, pads, and solder. The first terminal B1 and the second terminal B2 of the light emitting device 20 may be flip chip type light emitting devices And various types of light emitting devices such as a vertical type and a horizontal type having a signal transmission medium such as a wire or the like can be applied.

On the other hand, the reflective member 30 is formed by forming light emitted from the light emitting device 20 on the first side 23-1 formed in the first direction of the light emitting device 20, (23-2) (23-3) (23-4) of the light emitting device (20) so as to guide the light emitting device

Therefore, the reflective member 30 can have a minimum package thickness T1 except for the substrate 10 described above because it can guide light in the lateral direction.

1 to 3, the light emitting device 20 includes an upper surface 21, a lower surface 22, a first side surface 23-1, Two side surfaces 23-2, a third side surface 23-3 and a fourth side surface 23-4.

The hexahedron shaped light emitting device 20 may be in the form of a chip that can be naturally generated when the wafer is cut in the horizontal and vertical directions.

1 to 3, the reflection member 30 includes a top surface reflection portion 31, a side reflection portion 33, and a substrate reflection (32). ≪ / RTI >

For example, the upper surface reflector 31 may be a member provided on the upper surface of the light emitting device 20.

The side surface reflector 33 may be formed on the second side surface of the light emitting device 20 so that an exit opening OP may be formed on the first side surface 23-1 of the light emitting device 20. [ 23-2, the third side surface 23-2, and the fourth side surface 23-4.

Also, the substrate reflector 32 may be a member formed along the lower surface of the light emitting device 20.

The reflective member 30 may include an encapsulant including at least a light reflective material so as to reflect the light generated from the light emitting device 20 toward the first side 23-1, a reflective layer, a reflective layer, a metal reflective layer, and a combination thereof. The reflective layer may be formed of a reflective material, a paste, an epoxy molding compound, a white silicone, a DBR (Distributed Bragg Reflector)

More specifically, for example, the reflective member 30 is provided on the surface of the light emitting element 20 so as to surround the upper surface and the side surfaces in three directions of the light emitting element 20, and may be, for example, Lt; / RTI > In addition, the reflective member 30 may be in a wide variety of pocket shapes, such as a triangular pocket shape, a circular pocket shape, a hex pocket shape, a polygonal pocket shape, an elliptical pocket shape, a composite pocket shape, a geometric pocket shape, and the like. Therefore, the shape of the reflection member 30 of the side-emission type light emitting device package 100 according to some embodiments of the present invention is not limited to the shapes shown in FIGS.

Also, the reflective member 30 may be molded into the light emitting device 20, or may be dispensed or screen printed.

More specifically, for example, the reflective member 30 may be formed of a modified silicone resin composition such as an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition such as a silicone modified epoxy resin or an epoxy modified silicone resin, (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, EMC, at least EMC including a reflective material, white silicon containing a reflective material, and PSR (Photo Solder Resistor) may be used.

It is also possible to add a light reflective reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, .

In addition, the reflectance of light reflected by the reflective member 30 may vary depending on the material and the density of the reflective member 30. In addition, the reflectance may vary depending on the wavelength, type, color, light emission angle, and the like of the light emitted from the light emitting element 20. Therefore, the material and the density of the reflective member 30 can be optimized and designed according to the above-described environmental conditions.

Therefore, the light generated from the light emitting device 20 may be reflected by the reflective member 30 and may be emitted as the outgoing opening OP in which the reflective member 30 is not formed.

Therefore, as illustrated in FIG. 7, it is possible to install the light emitting device 20 in a state where the light emitting device 20 is laid down without needing to stand next to the light guide plate 50, thereby slimming the product and producing an ultra-thin product.

In addition, for example, heat generated from the light emitting device 20 can be smoothly discharged to the lower side of the substrate 10, reducing the thermal resistance from 70 deg / W to 20 deg / W, Can be prevented.

Further, it is possible to improve the lifetime and durability of the product, to increase the size of the LED chip in the lateral direction without increasing the thickness (T1) of the package, to secure the light quantity and to greatly improve the reliability, , A display device, a clear digital display device, and the like.

4 is a cross-sectional view illustrating a side-emitting type light emitting device package 200 according to some other embodiments of the present invention.

4, the side-emission type light emitting device package 200 according to some embodiments of the present invention may further include a first phosphor 41 disposed at the outgoing opening OP . The first phosphor 41 may be adhered or pasted to the outgoing opening OP in a sheet form or dispensed or dotted after the reflective member 30 is installed .

The light emitted from the light emitting device 20 is reflected by the reflective member 30 and is emitted to the outgoing opening OP where the reflective member 30 is not formed. May be converted into fluorescence by the first phosphor 41 to emit light of a broader frequency band such as white light.

5 is a cross-sectional view illustrating a side-emitting type light emitting device package 300 according to still another embodiment of the present invention.

5, the side-emission type light emitting device package 300 according to still another embodiment of the present invention includes a light emitting device 20 and a reflective member 30 disposed between the light emitting device 20 and the reflective member 30, (42). The second phosphor 42 may be adhered or pasted in a sheet form or dispensed or dotted before the reflective member 30 is installed.

Therefore, the light emitted from the light emitting device 20 can be first converted into fluorescence by the second phosphor 42 and converted into light of a broader frequency band such as white light, for example, May be reflected by the reflective member 30 and may be emitted to the outgoing aperture OP where the reflective member 30 is not formed.

Here, the first phosphor 41 and the second phosphor 42 may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the first phosphor 41 and the second phosphor 42 should basically correspond to stoichiometry and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

As a substitute for the first phosphor 41 and the second phosphor 42, a material such as a quantum dot may be used. Alternatively, a fluorescent material and QD may be mixed with the LED or used alone.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

The coating method of the first phosphor 41 and the second phosphor 42 or the quantum dot may be roughly divided into a method of being applied to an LED chip or a light emitting element or a method of covering the phosphor with a film, Or a method of attaching a sheet form of a sheet.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the first phosphor 41 and the second phosphor 42 on a wafer level or a light emitting device substrate by a spray method can easily control productivity and thickness.

The method of directly covering the light emitting element or the LED chip in a film form can be applied by electrophoresis, screen printing or molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the coating technique of the first phosphor 41 and the second phosphor 42 plays a major role in determining the optical characteristic in the light emitting device, control techniques such as the thickness of the phosphor coating layer, Various studies have been made. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

6 is a cross-sectional view illustrating a side-emitting type light emitting device package 300 according to still another embodiment of the present invention.

6, the side-emission type light emitting device package 300 according to still another embodiment of the present invention is provided between the upper surface 21 of the light emitting device 20 and the reflective member 30, , And a DBR (Distributed Bragg Reflector) 24 may be formed.

In addition, various reflection patterns or reflection protrusions may be formed between the upper surface 21 of the light emitting device 20 and the reflective member 30. [

Therefore, the light generated from the light emitting device 20 can be reflected in multiple directions through the DBR 24 and the reflection member 30 and guided in the direction of the light emitting opening OP.

7 is a perspective view illustrating a backlight unit 1000 according to some embodiments of the present invention.

7, a backlight unit 1000 according to some embodiments of the present invention includes a substrate 10 and a first terminal B1 mounted on the substrate 10, And a second terminal (B2) are mounted on the light emitting device (20), and a light emitting device (20) A reflective member 30 provided along the upper surface 21 and at least one side surface 23-2, 23-3 and 23-4 of the element 20 and a reflective member 30 provided along the first lateral direction And a light guide plate 50 installed on the light guide plate 50. Here, the substrate 10, the light emitting device 20, and the reflective member 30 may be the same as those of the side-emitting type light emitting device package 100 described in FIG. Therefore, detailed description is omitted.

The backlight unit 1000 is installed on an LCD panel and projects light toward the LCD panel. The backlight unit 1000 is installed in a path of light generated by the light emitting device 20, The light can be transmitted over a larger area.

The light guide plate 50 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , Besides, materials of various translucent resin series can be applied. The light guide plate 50 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

7, the side light emitting type light emitting device package 100 of the present invention may be an edge type light emitting device package provided on the side of the light guide plate 50, In order to prevent a mura phenomenon, a luminance deviation, and a color deviation which are generated in a direct room of the light emitting device 20, the side light emitting device package 100 of the present invention may be a backlight unit, Down type backlight unit that is installed below the light source unit 50.

8 is a flowchart illustrating a method of manufacturing a side-emission type light emitting device package according to some embodiments of the present invention. 9 is a flowchart illustrating a method of manufacturing the side-emitting type light-emitting device package 200 according to some other embodiments of the present invention. FIGS. 10 to 12 illustrate a side-emitting type light- And FIG.

8 to 12, a method of manufacturing a side-emission type light emitting device package 200 according to some embodiments of the present invention includes forming a first terminal B1 and a second terminal (S1) of preparing a flip chip type light emitting device (20) in which the light emitting device (20) is mounted, (S2) of installing the reflective member 30 along the upper surface 21 and the at least one side surface 23-2, 23-3, and 23-4 of the light emitting element 20.

9, a method of manufacturing a side-emission type light emitting device package 200 according to some embodiments of the present invention includes first forming a first terminal B1 on a lower surface 22, (S1) of a flip-chip type light emitting device (20) having a first terminal (B2) and a second terminal (B2) 11 along the upper surface 21 and the at least one side surface 23-2, 23-3, and 23-4 of the light emitting device 20 so as to guide the reflective member 30 in FIG. And a step S3 of installing the first phosphor 41 of FIG. 12 in the first lateral direction of the light emitting device 20. In this case, as shown in FIG.

11, the step S2 of installing the reflection member 30 includes a step S2-1 of applying the reflection member 30 to the light emitting device 20 .

13 is a flowchart illustrating a method of manufacturing a side-emission type light emitting device package 300 according to still another embodiment of the present invention.

FIGS. 14 to 17 are cross-sectional views illustrating steps of fabricating the side-emission type light-emitting device package 300 of FIG.

As shown in FIGS. 13 to 17, a manufacturing method of the side-emission type light emitting device package 300 of FIG. 17 according to still another embodiment of the present invention is characterized in that, as shown in FIG. 13, (S1) of the flip chip type light emitting element 20 of FIG. 14 in which the first terminal B1 and the second terminal B2 are provided on the light emitting element 20, 2 phosphors 42 are installed on the upper surface of the light emitting device 20 so that the light generated from the light emitting device 20 can be guided toward the first side of the light emitting device 20 (S2) of FIG. 16 along at least one side 23-2, 23-3 and 23-4 of the reflective member 30 and a step S2 of mounting the reflective member 30 of FIG. And cutting the cutting line L of FIG. 16 (S5) so that the outgoing opening OP is exposed to the outside.

The step S2 of installing the reflection member 30 shown in FIG. 13 is performed by supplying the reflection member resin to cover the outgoing opening OP to the cavity inside the mold, 30) by molding (S2-2).

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

B1: first terminal
B2: second terminal
10: substrate
20: Light emitting element
21: Upper surface
22: When you
23-1: First aspect
23-2: Second side
23-3: Third aspect
23-4: fourth side
24: DBR
30: reflective member
T1: Package thickness
31:
OP: Outgoing aperture
32:
33:
41: First phosphor
42: Second phosphor
50: light guide plate
L: Cutting line
100, 200, 300, 400: side-emitting type light emitting device package
1000: Backlight unit

Claims (12)

A flip chip type light emitting device in which a first terminal and a second terminal are provided on a lower surface; And
A reflective member installed along an upper surface and at least one side surface of the light emitting device so as to guide light generated from the light emitting device toward a first side of the light emitting device;
Emitting device package. The method according to claim 1,
The light emitting element is in the form of a hexahedron having an upper surface, a lower surface, a first side surface, a second side surface, a third side surface and a fourth side surface,
Wherein the reflective member comprises:
A top reflector provided on an upper surface of the light emitting device;
A side reflector formed along a second side, a third side and a fourth side of the light emitting device so that an outgoing opening can be formed on a first side of the light emitting device;
Emitting device package. 3. The method of claim 2,
Wherein the reflective member comprises:
A substrate reflector formed along the lower surface of the light emitting device;
Further comprising a light emitting diode package. 3. The method of claim 2,
A first phosphor disposed at the outgoing opening;
Further comprising a light emitting diode package. The method according to claim 1,
A second phosphor disposed between the light emitting device and the reflective member;
Further comprising a light emitting diode package. The method according to claim 1,
The reflective member may include at least a sealing material including a light reflecting material, a total reflection paste, an epoxy molding compound (EMC), a white silicone, a DBR (Distributed Bragg Reflector) A reflective layer, and a combination thereof. The method according to claim 1,
Wherein a DBR (Distributed Bragg Reflector) or a reflection pattern is formed between the upper surface of the light emitting element and the reflective member. Board;
A flip chip type light emitting device mounted on the substrate and provided with a first terminal and a second terminal on a lower surface;
A reflective member installed along an upper surface and at least one side surface of the light emitting device so as to guide light generated from the light emitting device toward a first side of the light emitting device; And
A light guide plate installed in a first side direction of the light emitting element;
. ≪ / RTI > Preparing a flip chip type light emitting device having a first terminal and a second terminal on a lower surface thereof; And
Providing a reflective member along an upper surface and at least one side surface of the light emitting device so as to guide light generated from the light emitting device toward a first side of the light emitting device;
Emitting device package. 10. The method of claim 9,
The step of preparing the light-
And forming a DBR (Distributed Bragg Reflector) or a reflection pattern on the light emitting device. 10. The method of claim 9,
The step of providing the reflective member may include:
And applying the reflective member to the light emitting device. 10. The method of claim 9,
Before the step of installing the reflective member,
Further comprising the step of providing a phosphor on the light emitting element,
The step of providing the reflective member may include:
And supplying the reflective member resin to the cavity inside the mold so as to cover the outgoing opening so as to mold the reflective member,
After the step of installing the reflective member,
And cutting the cut line so that the outgoing opening covered by the reflective member is exposed to the outside.

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