KR20150015142A - Method for manufacturing organic light emitting diode display - Google Patents

Abstract

The present invention relates to a manufacturing method for an organic light emitting diode display device. The organic light emitting diode display device manufacturing method includes the steps of providing a substrate partitioned into an organic light emitting diode area and a storage capacitor area; forming a first gate electrode and a first storage electrode on the substrate; and forming an oxide semiconductor path layer and a first gate insulation film on the substrate with the first gate electrode and forming an active layer on a first gate insulation film corresponding to the first gate electrode while forming an active pattern on the first gate insulation film corresponding to the first storage electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

The present invention relates to a method of manufacturing an organic light emitting diode display.

2. Description of the Related Art In recent years, flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed.

Such flat panel display devices include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), an organic light emitting diode display OLED).

The organic light emitting diode display device is a self-luminous device using a thin light emitting layer between electrodes, and can be made thin as paper. In the organic light emitting diode display device, a plurality of pixel regions, each of which is composed of three color (R, G, B) sub-pixels, are arranged in a matrix form, and a substrate on which the cell driver array and the organic light emitting array are formed is encapsulated. And emits light through the substrate to display an image.

In order to express color in the organic light emitting diode display device, organic light emitting layers that emit red (R), green (G), and blue (B) light are used. The organic light emitting layers are formed between two electrodes Thereby forming a light emitting diode (OLED).

In addition, the organic light emitting diode display device intersects a data line to which a video signal is supplied, a gate line to which a driving signal is supplied, and a power supply line to supply power to the organic light emitting diode. A switching thin film transistor, a driving thin film transistor, a storage capacitor, and an organic light emitting diode (OLED) are disposed in the pixel region.

However, in recent years, the pixel area of the organic light emitting diode display device has been narrowed in accordance with the demand for high resolution and high speed response characteristics, and thus it has been difficult to secure the aperture ratio of the pixel area. Further, a large-capacity storage capacitor capable of sufficiently charging a data signal (video signal) in a pixel region is required to realize a thin film transistor having a fast response characteristic in response to a demand for a high-speed response characteristic and to improve screen quality.

However, in order to implement the large capacitance in the pixel region, the electrode area of the storage capacitor must be widened. In this case, the aperture ratio of the pixel region is relatively reduced.

Therefore, a technique for realizing a large-capacity storage capacitor while securing the aperture ratio of the pixel region is required.

An object of the present invention is to provide a method of manufacturing an organic light emitting diode display device in which thin film transistors having a dual gate structure formed in a pixel region are formed to realize high speed response characteristics of switching elements.

It is another object of the present invention to provide a method of manufacturing an organic light emitting diode display device capable of improving the conductivity of an active layer used as a storage capacitor electrode in a pixel region and securing a capacity of a storage capacitor.

It is another object of the present invention to provide a method of manufacturing an organic light emitting diode display device in which conductivity is improved by performing light irradiation or plasma treatment on an active layer used as an electrode of a storage capacitor.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display device, the method including: providing a substrate having an organic light emitting diode region and a storage capacitor region; Forming a first gate electrode and a first storage electrode on the substrate; Forming a first gate insulating layer and a layer of an oxide semiconductor on the substrate on which the first gate electrode is formed, forming an active layer on the first gate insulating layer corresponding to the first gate electrode and a first Forming an active pattern on the gate insulating film; A second gate insulating film is formed on the substrate on which the active layer is formed, a shield pattern is formed on the second gate insulating film corresponding to the active layer, and light irradiation or plasma processing is performed to improve the conductivity of the active pattern To form a second storage electrode; Forming a second gate electrode on the second gate insulating film corresponding to the active layer by forming a metal film on the substrate on which the second gate insulating film is formed and forming a second gate electrode on the second gate insulating film corresponding to the second gate electrode in the storage capacitor region, Forming a third storage electrode on the gate insulating film; Forming a source / drain electrode electrically connected to the channel layer after the contact hole process is performed after forming an interlayer insulating film on the substrate having the second gate electrode formed thereon, Forming a fourth storage electrode on the insulating film; Forming a protective film on the substrate having the source / drain electrodes formed thereon, and forming a fifth storage electrode on the protective film corresponding to the fourth storage electrode.

The method of manufacturing an organic light emitting diode display device of the present invention has the effect of realizing high-speed response characteristics of switching elements by forming thin film transistors having a dual gate structure formed in a pixel region.

In addition, the method of manufacturing an organic light emitting diode display of the present invention has an effect of improving the conductivity of an active layer used as a storage capacitor electrode in a pixel region, and securing a capacity of a storage capacitor.

In addition, the method of manufacturing an organic light emitting diode display of the present invention has an effect of improving conductivity by performing light irradiation or plasma treatment on an active layer used as an electrode of a storage capacitor.

1 is a diagram showing a pixel structure of an organic light emitting diode display device according to the present invention.
Fig. 2 is an equivalent circuit diagram of Fig. 1. Fig.
3A to 3F are views illustrating a manufacturing process of an organic light emitting diode display device according to I-I 'and II-II' of FIG. 1, respectively.
FIG. 4 is a graph showing a capacitance characteristic when an oxide semiconductor layer is used as a capacitor electrode.
FIGS. 5A and 5B are views for explaining the principle of improving the conductivity when the oxide semiconductor layer is plasma-treated according to the present invention.
Fig. 6 is a graph showing the capacitance characteristics when the oxide semiconductor layer is subjected to the plasma treatment according to the present invention.
FIGS. 7A and 7B are diagrams for explaining the principle of improving the conductivity when the oxide semiconductor layer is irradiated with light according to the present invention. FIG.
8 is a diagram showing capacitance characteristics when light is irradiated onto the oxide semiconductor layer according to the present invention.
9 is a view illustrating a parallel structure of a storage capacitor region of the organic light emitting diode display device of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

FIG. 1 is a diagram showing a pixel structure of an organic light emitting diode display device according to the present invention, and FIG. 2 is an equivalent circuit diagram of FIG.

Referring to FIGS. 1 and 2, the organic light emitting diode display device of the present invention defines a matrix-shaped pixel region by intersecting a plurality of data lines Vdata, a scan line, and power supply lines VDD. Each of the pixel regions may emit red (R), green (G), blue (B), and white (W) color light, which may be referred to as subpixels. In addition, three or four subpixels can be named as a pixel in one unit.

The reference voltage line Vref may be disposed adjacent to and parallel to the data line Vdata. The reference voltage line Vref may be connected to a driving thin film transistor DR-Tr disposed in the pixel region, Thereby controlling the ground state of the thin film transistor DR-Tr.

A switching thin film transistor SW-Tr is disposed in a region where the scan line Scan and the data line Vdata intersect and a sensing line Sense connected to the reference voltage line Vref and a data line Vdata (S-Tr) and a driving transistor (DR-Tr) are arranged in the intersecting region of the sensor transistor S-Tr.

An organic light emitting diode (OLED) that emits red (R), green (G), blue (B), and white (W) color light may be disposed in the pixel region, and a driving transistor DR- A storage capacitor Cst for charging a data signal (video signal) may be disposed.

The switching thin film transistor SW-Tr is turned on in response to a gate driving signal supplied from the scan line Scan to charge the data signal supplied from the data line Vdata to the storage capacitor Cst do. The driving thin film transistor DR-Tr is turned on in response to a data signal charged in the storage capacitor Cst and the organic thin film transistor DR-Tr is turned on from the power source line VDD according to the operation of the driving thin film transistor DR- The amount of current supplied to the OLED is adjusted.

The sensor transistor S-Tr is connected between the driving thin film transistor DR-Tr and the organic light emitting diode OLED to control the ground state of the driving thin film transistor DR-Tr.

Although the thin film transistors are N-type transistors in FIGS. 1 and 2, the P-type thin film transistors may be formed as one embodiment.

The pixel of the organic light emitting diode display device of the present invention described above can operate as follows.

When the scan signal is supplied to the switching thin film transistor SW-Tr through the scan line Scan, the switching thin film transistor SW-Tr is turned on. Next, a data signal supplied through the data line Vdata is stored in the storage capacitor Cst through the switching transistor SW-Tr.

Next, when the scan signal is blocked and the switching thin film transistor SW-Tr is turned off, the driving thin film transistor DR-Tr turns on the data voltage stored in the storage capacitor Cst, (Turn-On).

Next, the current flowing through the organic light emitting diode (OLED) is controlled through the power supply line (VDD) according to the operation of the driving thin film transistor (DR-Tr). Specifically, the current flowing through the organic light emitting diode OLED is controlled according to a data signal stored in the storage capacitor Cst.

The organic light emitting diode OLED may include organic compound layers (HIL, HTL, EML, ETL, EIL) formed between the anode electrode and the cathode electrode. The organic compound layer may include a hole injection layer (HIL) A hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL).

When a driving voltage is applied to the anode electrode and the cathode electrode, holes passing through the HTL and electrons passing through the ETL are transferred to the EML to form excitons, Thereby generating visible light.

Also, as shown in FIG. 1, the opening area of the organic light emitting diode OLED may be increased or decreased depending on the size of the storage capacitor Cst region. Therefore, when the opening area of the organic light emitting diode OLED is made large, the storage capacitor Cst region must be structurally narrowed. However, since it is desirable that the storage capacitor Cst is designed to have a large value so as to sufficiently charge the data signal supplied from the data line Vdata, there is a limit in reducing the area of the storage capacitor Cst in order to secure the aperture ratio .

Accordingly, in the present invention, a structure of the storage capacitor (Cst) of the organic light emitting diode display device is formed by stacking a plurality of storage electrodes so that a plurality of storage capacitors can be formed within the same area.

In particular, in the present invention, in the case of the storage electrode formed of the oxide semiconductor layer among the storage electrodes, the oxide semiconductor layer is subjected to light irradiation or plasma treatment in order to solve the problem of lowering the capacity of the storage capacitor due to low conductivity compared to other storage electrodes Thereby improving the conductivity.

Also, a plurality of storage capacitors have a parallel connection structure so that the sum of the storage capacitors formed becomes a capacitance value of the entire storage capacitors.

The structure of the storage capacitor of the present invention related thereto is described in detail in the manufacturing process of FIGS. 3A to 3F.

3A to 3F are views illustrating a manufacturing process of an organic light emitting diode display device according to I-I 'and II-II' of FIG. 1, respectively.

Referring to FIGS. 1 and 3A to 3F, the organic light emitting diode display of the present invention includes a substrate 100, a metal film formed on the substrate 100, a mask process, Thereby forming the first gate electrode 101a. At this time, the first storage electrode 201 is formed in the storage capacitor Cst region of the organic light emitting diode display device of the present invention.

The first gate electrode 101a and the first storage electrode 201 may be formed of a metal such as aluminum (Al), aluminum alloy (Al), tungsten (W), copper (Cu), nickel Resistance opaque conductive material such as chromium (Cr), molybdenum (Mo), titanium (Ti), platinum (Pt), tantalum (Ta) In addition, a multi-layer structure in which a transparent conductive material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO) and an opaque conductive material are stacked can be formed.

As described above, when the first gate electrode 101a and the first storage electrode 201 are formed on the substrate 100, as shown in FIGS. 3B and 3C, the first gate insulating film 102 and the oxide semiconductor Layer is sequentially formed on the entire surface of the substrate 100. [

Thereafter, an active layer 104a is formed on the first gate insulating film 102 corresponding to the first gate electrode 101a by a mask process, and an oxide semiconductor pattern (not shown) is formed on the first storage electrode 201 202 are formed.

The oxide semiconductor may be an amorphous oxide including at least one of indium (In), zinc (Zn), gallium (Ga), and hafnium (Hf). For example, when a Ga-In-Zn-O oxide semiconductor is formed by a sputtering process, each target formed of In ₂ O ₃ , Ga ₂ O _3, and ZnO may be used, or a single target of Ga- Can be used. When a hf-In-Zn-O oxide semiconductor is formed by a sputtering process, each target formed of HfO ₂ , In ₂ O ₃ and ZnO may be used, or a single target of Hf-In-Zn oxide may be used Can be used.

As described above, when the oxide semiconductor pattern 202 is formed in the storage capacitor Cst region and the active layer 104a is formed in the driving TFT DR-Tr region, An insulating film 103 is formed.

A shield pattern 400 is formed on the second gate insulating film 103 corresponding to the active layer 104a and the entire surface of the substrate 100 is subjected to ultra violet or plasma treatment . The shield pattern 400 serves to prevent light or plasma from being irradiated to the active layer 104a formed at the bottom during the light irradiation (UV) process or the plasma process. The shield pattern 400 may be formed of a photoresist.

As described above, when the light irradiation or the plasma treatment is performed on the substrate 100, the active layer 104a is shielded by the shield pattern 400 and thus is not affected by light or plasma. However, the oxide semiconductor pattern 202 formed on the first storage electrode 201 is formed with the second storage electrode 302 having improved conductivity due to the light irradiation or the plasma treatment.

The principle in which the second storage electrode 302 is improved in conductivity by light irradiation or plasma treatment will be described in detail in FIGS. 5A, 5B, 7A and 7B below.

 As described above, when the second storage electrode 302 is completed, the shield pattern 400 is removed.

Therefore, the second storage electrode 302 has a better conduction characteristic than the second storage electrode formed of an oxide semiconductor, so that the capacitance of the storage capacitor can be increased, thereby ensuring the storage capacitance capacity stably .

As described above, when the second storage electrode 302 is formed, a second gate insulating film 103 and a metal film are sequentially formed on the entire surface of the substrate 100, as shown in FIG. 3D. Then, the masking process is performed to form the second gate electrode 101b in the region corresponding to the active layer 104a. The second gate electrode 101b is formed on the second gate insulating film 103. The second gate electrode 101b is formed on the second gate insulating film 103 by wet etching to form the second gate electrode 101b, And a dry etching process is continuously performed.

At this time, the second gate electrode 101b overlaps with the central region of the active layer 104a, and the edge region of the active layer 104a is rendered conductive by the plasma in the dry etching process.

That is, as shown in the drawing, the active layer 104a exposed at both side regions of the second gate electrode 101b is formed by the second gate insulating film 103 after the wet etching process for forming the second gate electrode 101b. Is exposed during the etching process and is converted into the conductive region 104. [

At this time, the second gate insulating film 103 and the metal film are etched on the second storage electrode 302 in the storage capacitor Cst region, and the third storage electrode 203 is overlapped with the second storage electrode 302, .

The third storage electrode 203 is in electrical contact with the first storage electrode 201 formed on the substrate 100 through the contact hole.

The metal film used for forming the second gate electrode 101b and the third storage electrode 203 may be the same metal as the metal film used for forming the first gate electrode 101a.

When the second gate electrode 101b and the third storage electrode 203 are formed on the second gate insulating film 103 as shown in FIG. 3E, an interlayer insulating film (not shown) is formed on the entire surface of the substrate 100 107 are formed. Then, a contact hole process is performed to expose regions formed by the conductive regions 104 on both side edges of the active layer 104a corresponding to the second gate electrode 101b.

A contact hole exposing a part of the third storage electrode 203 and a part of the extended region formed integrally with the second storage electrode 302 is formed in the storage capacitor Cst region.

Then, as shown in FIG. 3F, a source / drain metal film is formed on the front surface of the substrate 100, and a source / drain metal film, which is in contact with the conductive region 104 of the second gate electrode 101b region, Drain electrodes 115a and 115b are formed.

The source / drain metal is selected from the group consisting of molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum Either one can be used.

In the storage capacitor Cst, a fourth storage electrode 204 is formed on the interlayer insulating film 107 so as to overlap with the third storage electrode 203. That is, the fourth storage electrode 204 is formed simultaneously with the source / drain electrodes 115a and 115b.

The fourth storage electrode 204 extends from the second storage electrode 302 and is in electrical contact with a region where a part of the interlayer insulating film 107 is removed. That is, the fourth storage electrode 204 is electrically connected to the second storage electrode 302 through the contact hole.

In addition, a connection pattern 216 electrically isolated from the fourth storage electrode 204 is formed for electrical contact with the exposed third storage electrode 203. The connection pattern 216 electrically connects the fifth storage electrode 205 and the third storage electrode 203, which will be formed later.

As described above, when the fourth storage electrode 204 and the source / drain electrodes 115a and 115b are formed on the substrate 100, a protective film 108 is formed on the entire surface of the substrate 100, Thereby exposing a part of the connection pattern 216.

The fifth storage electrode 205 is formed on the protective layer 108 corresponding to the fourth storage electrode 204 when the electrode (anode or cathode) of the organic light emitting diode OLED is formed. The fifth storage electrode 205 is electrically connected to the connection pattern 216.

The storage capacitor Cst of the organic light emitting diode display of the present invention includes the first, third and fifth storage electrodes 201, 203, and 205 formed on the substrate 100 and the second and fourth storage electrodes 302 , 204 are alternately superimposed on each other to form four parallel-connected storage capacitors (C1 to C4 in FIG. 9).

9, the first through fourth storage capacitors C1, C2, C3, and C4 are arranged in parallel to each other in the vertical direction, but they are connected in parallel to each other . Accordingly, the total size of the storage capacitors of the organic light emitting diode display device of the present invention is implemented as the sum of the first to fourth storage capacitors C1, C2, C3, and C4.

Therefore, when the storage capacitor region is formed with the same area as that of the prior art, the present invention is a sum of four storage capacitors, so that a much larger storage capacitance can be obtained. As a result, the charging characteristic of the data signal can be improved.

In addition, the organic light emitting diode display device of the present invention can realize the same or a larger storage capacitance value in an area narrower than the storage capacitor area of the related art, thereby improving the aperture ratio of the organic light emitting diode (OLED) area.

In addition, the organic light emitting diode display of the present invention is capable of stably ensuring the capacitance of the storage capacitance by improving the conductivity by irradiating or plasma-treating the oxide semiconductor pattern used as the electrode of the storage capacitor.

FIG. 4 is a graph showing a capacitance characteristic when an oxide semiconductor layer is used as a capacitor electrode. As shown in FIG. 4, when an applied voltage is low, the conductivity is low, The characteristics of the capacitor are deteriorated.

When the organic electroluminescent diode display device is not driven, there is no problem because no capacitance is required. However, since the voltage applied to the driving section during the driving period must be 5V or more, the capacitance of the capacitor can be realized. The capacitance of the capacitor is lowered.

Accordingly, when the electrodes of the storage capacitor in the pixel region are made of oxide semiconductors, they have conductive characteristics, but in the low voltage driving period, the conductive characteristics are poor and the characteristics of the storage capacitor are deteriorated.

However, in the present invention, as described in FIGS. 3A to 3F, the storage electrode formed of an oxide semiconductor is subjected to light irradiation or plasma treatment to improve the conductivity of the oxide semiconductor, thereby improving the characteristics of the storage capacitor.

FIGS. 5A and 5B are views for explaining the principle of improved conductivity when the oxide semiconductor layer is subjected to plasma treatment according to the present invention. FIG. Fig.

5A to 6, a gate insulating film GL is formed on the active layer AL and the active layer AL made of an oxide semiconductor. When a plasma is exposed to the gate insulating film GL, The bonding state of silicon (Si) atoms is changed to change the internal charge. Generally, a positive charge is generated by the plasma, and an internal electric field is generated between the gate insulating film GL and the active layer AL, as shown in Fig.

This internal electric field improves the conduction characteristics of the active layer AL, and when the active layer AL is used as the electrode, the conduction characteristics are improved as compared with the case where the active layer made of the oxide semiconductor is used as the electrode.

As shown in FIG. 6, the conduction characteristics are improved in the low-voltage (0 to 5 V) range in the oxide semiconductor layer subjected to the plasma treatment compared to the conventional oxide semiconductor layer (As-dep). That is, due to the plasma treatment, the capacitor characteristics of the oxide semiconductor of FIG. 4 shift to the left, and the capacitance characteristics of the storage capacitor in the low voltage region are improved.

FIGS. 7A and 7B are diagrams for explaining the principle of improved conductivity when the oxide semiconductor layer is irradiated with light according to the present invention, and FIG. 8 is a graph showing the relationship between the capacitance when the oxide semiconductor layer is irradiated with light Fig.

7A to 8, when the oxide semiconductor layer is irradiated with light, a vacancy is generated in the oxide semiconductor, and the concentration of the carrier is increased.

As a result, the conduction band band Ec is lowered in the direction of the Fermi level Ef with respect to the valence band Ev, and the current characteristics are improved.

As shown in the figure, the conduction band band Ec was 0.54 eV based on the Fermi level Ef, but it was found to be 0.24 eV lower after the light irradiation. As a result, as shown in FIG. 7B and FIG. 8, it can be seen that the amount of current increases in the oxide semiconductor after light irradiation than in the initial state (Initial) in which the oxide semiconductor is not irradiated with light.

Accordingly, the conductivity of the oxide semiconductor layer is improved due to light irradiation, and when the oxide semiconductor layer is used as a storage capacitor electrode, the storage capacitance characteristics can be improved as compared with an oxide semiconductor not irradiated with light.

9 is a view illustrating a parallel structure of a storage capacitor region of the organic light emitting diode display device of the present invention.

Referring to FIG. 9, a storage capacitor Cst region is formed in the pixel region of the organic light emitting diode display device of the present invention. As shown in FIG. 3F, the structure of the storage capacitor Cst is formed on the substrate 100 The first to fifth storage electrodes 201, 302, 203, 204, and 205 are sequentially stacked.

First and second gate insulating films 102 and 103, an interlayer insulating film 107, and a protective film 108 are alternately arranged between the first to fifth storage electrodes 201, 302, 203, 204 and 205 .

A first storage capacitor C1 is formed between the first storage electrode 201 and the second storage electrode 302 and a second storage capacitor C1 is formed between the second storage electrode 302 and the third storage electrode 203. [ A third storage capacitor C3 is formed between the third storage electrode 203 and the fourth storage electrode 204 and a third storage capacitor C3 is formed between the fourth storage electrode 204 and the fourth storage electrode 204. [ A fourth storage capacitor (C4) is formed between the storage electrodes (205).

In particular, since the first through fourth storage capacitors C1, C2, C3, and C4 form a parallel structure in an equivalent circuit, the storage capacitance Cst of the organic light emitting diode Is represented by the sum of the fourth storage capacitors C1, C2, C3 and C4. Particularly, the second storage electrode 302 is not formed of an oxide semiconductor. In the present invention, the light irradiation or the plasma treatment is performed to improve the conductivity and realize a large-capacity storage capacitance stably.

Therefore, when the storage capacitor region is formed with the same area as that of the prior art, the present invention is a sum of four storage capacitors, so that a much larger storage capacitance can be obtained. As a result, the charging characteristic of the data signal can be improved.

In addition, the organic light emitting diode display device of the present invention can realize the same or a larger storage capacitance value in an area narrower than the storage capacitor area of the related art, thereby improving the aperture ratio of the organic light emitting diode (OLED) area.

In addition, the organic light emitting diode display of the present invention is capable of stably ensuring the capacitance of the storage capacitance by improving the conductivity by irradiating or plasma-treating the oxide semiconductor pattern used as the electrode of the storage capacitor.

100: substrate 101a: first gate electrode
101b: second gate electrode 102: first gate insulating film
103: second gate insulating film 104a: channel layer
107: interlayer insulating film 108: protective film
201: first storage electrode 302: second storage electrode
203: third storage electrode 204: fourth storage electrode
205: fifth storage electrode

Claims (7)

Providing a substrate in which an organic light emitting diode region and a storage capacitor region are partitioned;
Forming a first gate electrode and a first storage electrode on the substrate;
Forming a first gate insulating layer and a layer of an oxide semiconductor on the substrate on which the first gate electrode is formed, forming an active layer on the first gate insulating layer corresponding to the first gate electrode and a first Forming an active pattern on the gate insulating film;
A second gate insulating film is formed on the substrate on which the active layer is formed, a shield pattern is formed on the second gate insulating film corresponding to the active layer, and light irradiation or plasma processing is performed to improve the conductivity of the active pattern To form a second storage electrode;
Forming a second gate electrode on the second gate insulating film corresponding to the active layer by forming a metal film on the substrate on which the second gate insulating film is formed and forming a second gate electrode on the second gate insulating film corresponding to the second gate electrode in the storage capacitor region, Forming a third storage electrode on the gate insulating film;
Forming a source / drain electrode electrically connected to the channel layer after the contact hole process is performed after forming an interlayer insulating film on the substrate having the second gate electrode formed thereon, Forming a fourth storage electrode on the insulating film; And
Forming a protective film on the substrate on which the source / drain electrodes are formed, and forming a fifth storage electrode on the protective film corresponding to the fourth storage electrode.
2. The method of claim 1, wherein the active layer and the second storage electrode are formed of an oxide semiconductor.
The method according to claim 1, wherein the second gate electrode
A wet etching step of etching the metal film to form a second gate electrode and a third storage electrode,
And patterning the second gate insulating layer and the second gate insulating layer formed under the third storage electrode.
4. The method of claim 3, wherein the dry process for removing the second gate insulating film comprises forming both side edges of the active layer formed under the second gate electrode as a conductive region by plasma.
The method of claim 1, wherein the storage capacitor region includes the first to fifth storage electrodes, and has a sum size of first to fourth storage capacitors formed between the first to fifth storage electrodes Wherein the organic light emitting diode display device is manufactured by a method comprising:
The plasma display panel of claim 5, wherein the first, third, and fifth storage electrodes are electrically connected to each other, and the second and fourth storage electrodes are electrically connected to each other, and the first to fourth storage capacitors are connected in parallel Gt; < / RTI >
The method of claim 1, wherein the oxide semiconductor layer comprises at least one of indium (In), zinc (Zn), gallium (Ga), and hafnium (Hf).

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