KR20140081548A - Semiconductor package and manufacturing method for the same - Google Patents

Abstract

Provided are a semiconductor package and a manufacturing method thereof. The semiconductor package and the manufacturing method thereof form a magnetic particle layer in which magnetic particles are concentrated in a local portion of a protective layer and use the magnetic particle layer as an electromagnetic shielding part by applying a magnetic field to the protective layer which maintains a flow state and inducing the magnetic particles within the protective layer to move and gather by the magnetic field when the protective layer covering a semiconductor chip mounted on a package substrate is formed.

Description

[0001] Semiconductor package and manufacturing method for the same [0002]

The present invention relates to a semiconductor package, and more particularly, to a semiconductor package including an electromagnetic wave shielding means and a manufacturing method.

Electronic devices required for electronic devices may include various electronic circuit elements, which may be integrated into a semiconductor substrate called a semiconductor chip or die. Memory semiconductor chips are also employed in chip package form in electronic systems such as computers, mobile devices or data storage.

As mobile products such as smart phones are becoming smaller and lighter, efforts are being made to overcome electromagnetic interference in semiconductor packages mounted on mobile products. Electromagnetic Emission / Interface (EMI) can be generated by an electromagnetic wave signal that is radiated (RE) or conduction (CE) from an electronic device such as a semiconductor chip. Electromagnetic interference may interfere with the operation of other adjacent chips or devices, thereby degrading the overall performance of the circuit and causing malfunctions.

This application proposes a semiconductor package and a fabrication method capable of shielding electromagnetic interference signals to improve operational reliability.

One aspect of the present application relates to a semiconductor chip mounted on a package substrate; A protective layer covering and protecting the semiconductor chip; And a magnetic particle layer in which the magnetic particles impregnated in the protective layer are densely packed.

According to another aspect of the present application, there is provided a method of manufacturing a semiconductor device, comprising: mounting a semiconductor chip on a package substrate; Forming a protective layer covering the semiconductor chip by flowing a protective material in which magnetic particles are dispersed in a fluidized state; And applying a magnetic field to the protective layer when the protective material is maintained in a fluid state to induce an electromagnetic wave shielding portion including a magnetic particle layer in which the magnetic particles are densely packed in a local portion of the protective layer .

According to another aspect of the present application, there is provided a method of manufacturing a semiconductor device, comprising: mounting a semiconductor chip on a package substrate; Molding the protective material in which the magnetic particles are dispersed to form a protective layer; And applying a magnetic field to the protective layer to keep the protective material in a fluid state during the molding and to induce an electromagnetic wave shielding portion including a magnetic particle layer in which the magnetic particles are densely packed in a local portion of the protective layer .

The magnetic particles can be moved and gathered by the magnetic field to form the magnetic particle layer.

The step of forming the protective layer may include the step of imparting a shape to the protective layer and introducing the package substrate into a mold to provide the magnetic field.

The mold may be introduced into a magnetic mold to provide the magnetic field.

The mold may be introduced with a magnetic part for providing the magnetic field.

The protective material may include a dielectric material, a resin, or an epoxy molding material (EMC).

The package substrate may include a ground portion as wiring, and the electromagnetic wave shield portion may be electrically connected to the ground portion. And the magnetic particle layer of the electromagnetic wave shielding portion may be electrically connected to the ground portion directly.

The magnetic particle layer may have a dome or cap-shaped layer that allows the semiconductor chip to be positioned inside the protective layer, and an end portion may contact the ground portion.

The magnetic particle layer may be formed such that the magnetic particles are densely packed in the local portion in the protective layer relative to other layer portions.

The magnetic particle layer may be formed such that the magnetic particles are denser than the inner surface of the protective layer and the surface layer below the surface.

The magnetic particle layer may be formed such that the magnetic particles are denser than other portions of the inner intermediate layer portion of the protective layer between the surface of the protective layer and the surface of the semiconductor chip.

The magnetic particle layer may have a thickness different from region to region, including a first portion of a thicker thickness and a second portion of a less dense and thinner thickness, wherein the magnetic particles are relatively more dense.

According to the embodiments of the present application, it is possible to provide a semiconductor package and a manufacturing method that can shield electromagnetic interference signals to improve operational reliability.

FIG. 1 and FIG. 2 are views for explaining an example of a semiconductor package according to the embodiments of the present application.
FIGS. 3 and 4 are diagrams for illustrating other examples of the semiconductor package according to the embodiments of the present application.
FIGS. 5 to 10 are views for explaining a semiconductor package manufacturing method according to embodiments of the present application.

The semiconductor package and the manufacturing method according to the present application are characterized in that a magnetic field is applied to a protective material that is maintained in a fluid state or a fluid state in a process of dispersing and distributing magnetic particles in a protective material forming a protective layer and molding the protective material The magnetic particles are densely packed in a local portion of the protective layer to be molded or formed to induce a layer of magnetic particles to form an electromagnetic shielding part. Thereafter, by solidifying the protective material in the fluidized state, the magnetic particle layer can be immersed in the protective layer.

A process of attaching a member for shielding electromagnetic waves, for example, a conductive sheet, a magnetic sheet, or a shielding cap to the surface of the protective layer may be omitted. Since the electromagnetic wave shielding portion including the magnetic particle layer is substantially integrated with the protective layer, when the member for shielding electromagnetic waves is attached, the phenomenon that the electromagnetic wave shielding member is separated from the electromagnetic wave shielding member due to insufficient interfacial adhesion between the electromagnetic wave shielding member and the protective layer have. In addition, when a member for shielding electromagnetic waves is introduced, the entire package size or volume can be increased by the size or volume of the electromagnetic shielding member in the shape of the protective layer whose shape has already been formed by molding, Since the electromagnetic shielding portion is substantially integrated with the protective layer, the increase in the package size can be substantially prevented. Therefore, the accuracy of the package product size can be more enhanced.

In the description of the embodiments of the present application, the description such as "first" and "second" is for distinguishing members and is not used to limit members or to denote specific orders. Further, the base on which the member is located on the " upper "or" lower "or" inside "of the member means a relative positional relationship. The member directly contacts the member, But does not limit the specific case. It is also to be understood that the description of a component being "connected" or " connected "to another component may be directly connected or connected to another component, Elements may be intervened to form a connection or connection relationship. In the case of "directly connected" or "directly connected ", it can be interpreted that there are no other components in between. The same interpretation can be applied to other expressions that describe the relationship between the components.

The description of "chip" may refer to a semiconductor chip on which integrated circuits are integrated, and may be a memory chip or a semiconductor substrate on which memory integrated circuits such as DRAM, SRAM, FLASH, MRAM, ReRAM, FeRAM or PcRAM are integrated, May refer to a logic chip or AP (Application Processor) chip in which integrated circuits are integrated. The chip may be interpreted as a die or substrate on which the integrated circuit is integrated.

The base material of "magnetic particle" can be interpreted not only as a magnetized magnetic material, but also as particles that can be attracted by a magnetic field such as iron (Fe) or iron oxide . The "magnetic particle" may be a powder particle composed of a ferromagnetic, soft magnetic or paramagnetic material. "Magnetic particles" are powders of ferrite materials such as iron oxide (FeO, Fe2O3, Fe2O4, Fe3O4, etc.) or nickel-zinc ferrite or manganese-zinc ferrite, permalloy or sendust and may be selected from the group consisting of nickel (Ni), zinc (Zn), manganese (Mn), cobalt (Co), magnesium (Mg), aluminum (Al), barium (Ba) ) Or iron (Fe). The ferrite powder and the metal powder may be mixed and used. The "magnetic particle" may have a granular or plate-like shape having a size of about 1 mu m or less, a size of about several mu m or less, or a size of about several tens of mu m.

In the description of the embodiments of the present application, the "protective layer" and "protective material" may be made of a dielectric material including a polymer as a member for protecting a semiconductor chip. A dielectric material in which fillers are dispersed in an epoxy resin such as an epoxy molding compound (EMC), and may be a dielectric material containing an acrylic resin, an epoxy resin, or a urethane resin, .

 Unless defined otherwise, terms including technical or scientific terms may be interpreted in the same sense as commonly understood by one of ordinary skill in the art to which this application belongs. The lexical meaning of the terms is valid to be interpreted in a manner consistent with the meaning of the context in the relevant art and is not intended to be interpreted as an ideal or overly formal sense unless expressly defined .

FIG. 1 and FIG. 2 are views for explaining an example of a semiconductor package according to the embodiments of the present application.

Referring to FIG. 1, a semiconductor package may include a structure in which semiconductor chips 200 and 210 and 230 are stacked on a package substrate 100. 1 illustrates a case where the semiconductor chip 200 is stacked on the lower semiconductor chip 210 with the upper semiconductor chip 230 stacked on the package substrate 100. However, Or may be stacked such that a plurality of semiconductor chips 200 are stacked substantially vertically. The semiconductor chips 210 and 230 may be of the same type and may have different sizes, shapes, or functions. The semiconductor chips 210 and 230 may be memory semiconductor chips, and may include a controller chip or a communication chip as the case may be.

The semiconductor chip 200 can be mounted on the interface 101 with the package substrate 100 via an adhesive layer (not shown). An upper semiconductor chip 230 may be attached to the lower semiconductor chip 210 with an adhesive layer (not shown) interposed between the lower semiconductor chip 210 and the upper semiconductor chip 230. The package substrate 100 may be a printed circuit board (PCB), and may be an interposer or an embedded substrate, as the case may be. The package substrate 100 may include various types of wires. A grounding terminal 111 for grounding, a grounding terminal 115 for electrically connecting the grounding unit 111 to the outside, and a connection via 111 for connecting the grounding unit 115 and the grounding unit 111 to each other so as to interconnect the grounding unit 111 a ground wiring portion 110 including a via 113 may be provided as a kind of wiring in the package substrate 100.

The package substrate 100 may further include wires having various shapes for electrically connecting the semiconductor chip 200 to the outside in addition to the ground wiring portion 110. For example, a bonding finger (not shown) as a connection terminal to which a connection wiring 250 such as a bonding wire connected to the semiconductor chip 200 is connected and a trace trace (not shown) Not shown). The connection wiring 250 is shown in the form of a bonding wire but may be a connecting means between the semiconductor chips 200 or a connecting means between the semiconductor chip 200 and the package substrate 100, Can be used.

A protective layer 310 covering and protecting the semiconductor chips 200 mounted on the package substrate 100 may be formed. In the case of the stacked package, the protective layer 310 may be formed by a molding process using an epoxy molding material (EMC) as a protective material. In some cases, the protective layer 310 may be formed to cover and protect the semiconductor chip 200 by injecting a protective material. In the case of a built-in substrate type package, a laminate may be formed in the form of a dielectric film. As shown in FIG. The protective material may be introduced into EMC or introduced into a dielectric material containing a resin component or a polymer component such as an acrylic resin, an epoxy resin or a urethane resin.

The electromagnetic wave shielding part 330 is impregnated into the protective layer 310. [ The electromagnetic wave shielding part 330 may be formed by impregnating the protective layer 310 with magnetic particles 331 as illustrated in FIG. The magnetic particles 331 are closely packed to form a layer of the magnetic particles 331, and the electromagnetic wave shielding portion 330 may be provided as the magnetic particle layer. The magnetic particles 331 may be impregnated with a protective material constituting the protective layer 310, for example, EMC, and may be substantially integrated with the protective layer 310 and fixed. Thus, it is possible to effectively prevent the electromagnetic wave shielding portion 330 from being peeled off or released from the protective layer 310.

Since the protective layer 310 and the electromagnetic wave shielding part 330 of the magnetic particle layer are integrated, it is not necessary to attach another electromagnetic wave shielding means in the form of sheet, paste or cap , So that it is possible to prevent the semiconductor package including the protective layer 310 from being increased in size by the attachment of the electromagnetic shielding means. Since the size or thickness of the protective layer 310 is precisely limited by the cavity of the mold introduced during the molding process, it is possible to suppress the increase of the size of the semiconductor package due to the introduction of the electromagnetic wave shielding part 330 can do. As a result, the size of the semiconductor package can be reduced, and the thickness can be further reduced.

 The magnetic particles 331 are powders of a ferrite material such as iron oxide (FeO, Fe2O3, Fe2O4, Fe3O4, etc.) or Ni-Zn ferrite or Mn-Zn ferrite, (Mn), cobalt (Co), magnesium (Mg), aluminum (Al), barium (Ba), copper (Fe) Cu) or iron (Fe). The ferrite powder and the metal powder may be mixed and used.

The magnetic particles 331 are densified into a layer in the form of a dome or a cap which places the semiconductor chip 200 in the inside thereof and the end of which is densely in direct contact with the grounding portion 111, 310, respectively. A separate connecting means for electrically connecting the layers of the grounding part 111 and the magnetic particles 331 may be omitted since the layer in which the magnetic particles 331 are concentrated can be directly connected to the grounding part 111 have.

The layer of the magnetic particles 331 constituting the electromagnetic wave shielding portion 330 may be formed such that the magnetic particles 331 are relatively denser than other layer portions in the local region portion in the protective layer 310. [ 1 and 2, the magnetic particles 331 are relatively more dense than the inner portion below the surface and the surface layer below the surface of the protective layer 310 to form a layer of the magnetic particles 331 have. Some of the magnetic particles 331 may be fixed to be positioned at the inner portion below the surface layer portion of the protective layer 310 but the number of the magnetic particles 331 located at the surface layer portion is substantially large, 310). ≪ / RTI > The surface layer portion of the protective layer 310 is a portion that is close to the surface and is a term that refers to a portion located on the opposite side of the inner side portion of the protective layer 310 under the protective layer 310 or the portion adjacent to the surface of the upper semiconductor chip 230 .

FIGS. 3 and 4 are diagrams for illustrating other examples of the semiconductor package according to the embodiments of the present application.

3, the electromagnetic wave shielding part 350 including the layer of the magnetic particles 331 impregnated into the protective layer 310 of the semiconductor package is formed by stacking the magnetic particles 331 in a relatively thick first layer Portion 353 and a relatively less dense, second portion 355 of thin thickness. The magnetic particle layers 353 and 355 can be fixed on the surface and the surface layer of the protective layer 310. The first portion 313 of the protection layer 310 covers a portion of the semiconductor chip 200 having a relatively high electromagnetic wave generation and the second portion 315 is a portion of the semiconductor chip 200, And may be a portion that covers a portion of the other part of the area. The first portion 353 of the magnetic particle layers 353 and 355 is fixed to the first portion 313 of the protective layer 310 superimposed on a portion of the region of the semiconductor chip 200 in which electromagnetic wave generation is relatively high And the second portion 355 of the magnetic particle layers 353 and 355 are located in the second portion 315 of the protective layer 310 overlapping with another portion of the semiconductor chip 200 in which electromagnetic wave generation is relatively low Can be fixed.

4, the electromagnetic wave shielding part 370 including the layer of the magnetic particles 331 impregnated into the protective layer 310 of the semiconductor package is formed by stacking the magnetic particles 331 on the surface of the protective layer 310, And may be formed as a layer in the inner intermediate layer portion of the protective layer 310 between the surfaces of the chip 200. The layer of the magnetic particles 331 may be fixed at the intermediate layer portion of the protective layer 310 and the magnetic particles 331 may be more densely packed than the other portions of the upper and lower protective layers 310 Lt; / RTI >

FIGS. 5 to 9 are views for explaining a semiconductor package manufacturing method according to the embodiments of the present application. Fig. 10 is a view for explaining a mold according to an embodiment of the present application. Fig.

Referring to FIG. 5, a protective material 311 in which magnetic particles 331 are dispersed is prepared. The protective material 311 may be introduced into a dielectric material including a resin component, for example, an acrylic resin, an epoxy resin or a urethane resin, or a polymer component. Alternatively, as shown in FIG. 6, the protective material 314 may be introduced into a composite dielectric material, such as EMC, filled with a filler 313 of a ceramic component in a resin component 312 such as an epoxy resin . The magnetic particles 331 are mixed and dispersed in these protective materials (311 in Fig. 5, 314 in Fig. 6).

The magnetic particles 331 are powders of a ferrite material such as iron oxide (FeO, Fe2O3, Fe2O4, Fe3O4, etc.) or Ni-Zn ferrite or Mn-Zn ferrite, (Mn), cobalt (Co), magnesium (Mg), aluminum (Al), barium (Ba), copper (Fe) Cu) or iron (Fe). The ferrite powder and the metal powder may be mixed and used.

Referring to FIG. 7, a semiconductor chip 200 is mounted on a package substrate 100. A plurality of semiconductor chips 200 may be stacked. The semiconductor chips 200 may be mounted on the package substrate 100 in a structure in which the lower semiconductor chips 230 are stacked on the upper semiconductor chip 210 in a stepped shape. The semiconductor chips 210 and 230 may be of the same type and may have different sizes, shapes, or functions.

A protection layer 310 for protecting the semiconductor chip 200 is formed by covering the package substrate 100 on which the semiconductor chip 200 is mounted by using the protection material 311. The protective material 311 may be heated or turned to a fluid state such as a liquid phase by applying heat to the protective material 311 and then injected or flowed so that the protective material 311 in a fluid state covers the semiconductor chip 200. For example, after the mold 400 is introduced onto the package substrate 100 so that the semiconductor chip 200 is inserted into the cavity inside the mold 400, the mold 400 is inserted into the cavity inside the mold 400, A molding process for injecting a fluid or a protective material 311 into the cavity may be performed.

The protective material 311 injected into the mold 400 is maintained in a fluidized state and the protective material 311 held in a fluidized state maintains the shape of the protective layer 310 by the mold 400, 310 from the outside. The mold 400 itself may be made of a magnetic mold having magnetic properties to provide the magnetic field 410. 7, it is possible to dispose the magnet portions 455 outside the mold 405 having the cavity 407 to apply the magnetic field (410 in FIG. 7), as shown in FIG. At this time, the magnet portion 455 may include a single or a plurality of permanent magnets, or may include an electromagnet.

The magnetic field 410 is applied to the protective material 311 or the protective layer 310 injected into the mold 400 and the magnetic particles 331 are attracted toward the mold 400 as shown in Fig. (430) so as to be concentrated in the local region portion in the protective layer (310). The magnetic particles 331 are concentrated in the local region portion in the protective layer 310 being kept in a fluid state by the movement 430 of the magnetic particles 331 attracted to the magnetic field 410, . The magnetic particles 331 can be moved to form a magnetic particle layer in the form of a dome or a cap that positions the semiconductor chip 200 inside by the magnetic field 410. The protective material 311 constituting the protective layer 310 is solidified and the moved magnetic particles 331 are fixed to form the electromagnetic wave shielding part 330. [

When the magnetic particles 331 are moved 430 to the boundary portion between the mold 400 and the protective layer 310 by the magnetic field 410, the electromagnetic wave shielding portion 330 may be composed of a layer of magnetic particles 331 relatively denser than the inner portion below the surface and the surface layer below the surface of the protective layer 310. At this time, by controlling the intensity of the magnetic field 410, the degree of fluidity of the protective material 311, and the molding temperature to control the movement (430) or movement distance of the magnetic particles 331, The particles 331 may be induced to be concentrated in the intermediate layer portion inside the protective layer 310 between the surface of the protective layer 310 and the surface of the semiconductor chip 200 to form a layer.

Referring to FIG. 9, by applying magnetic fields 411 and 413 having different intensities to the regions 401 and 403 of the mold 400, the thicknesses of the layers of the magnetic particles 331 can be differentiated have. A first magnetic field 411 of relatively higher intensity is applied to the first area 401 of the mold 400 and a second magnetic field 413 of relatively lower intensity is applied to the remaining remaining second area 403. [ A magnetic particle layer may be derived that includes the first portion 353 of a relatively thicker thickness of the magnetic particles 331 and the second portion 355 of a less dense and relatively thinner thickness. The first magnetic field 411 allows more of the magnetic particles 331 to undergo a first movement 431 so that the first portion 353 of the magnetic particle layer can be made and the second magnetic field 413 allows a smaller number of magnetic The particles 331 may undergo a second movement 433 to make the second portion 355 of the magnetic particle layer. Thus, the electromagnetic wave shielding portion 350 including the first portion 353 and the second portion 355 of the magnetic particle layer can be derived as described with reference to Fig.

Although the embodiments of the present application as described above illustrate and describe the drawings, it is intended to illustrate what is being suggested in the present application and is not intended to limit what is presented in the present application in a detailed form. Various other modifications will be possible as long as the technical ideas presented in this application are reflected.

100: package substrate, 200, 210, 230: semiconductor chip,
310: protective layer, 331: magnetic particles,
330: electromagnetic wave shielding part, 400, 405: mold,
455: Magnet section.

Claims (20)

A semiconductor chip mounted on a package substrate;
A protective layer covering and protecting the semiconductor chip; And
And a magnetic particle layer in which the magnetic particles impregnated in the protective layer are densely packed.
The method according to claim 1,
The package substrate
And a ground portion as a wiring,
And the electromagnetic wave shielding portion is electrically connected to the grounding portion.
3. The method of claim 2,
And the magnetic particle layer of the electromagnetic wave shielding portion is electrically connected to the grounding portion directly.
The method of claim 3,
Wherein the magnetic particle layer has a dome or a cap-shaped layer for allowing the semiconductor chip to be positioned in the protective layer, and an end portion of the magnetic particle layer contacts the grounding portion.
The method according to claim 1,
The magnetic particle layer
Wherein the magnetic particles are relatively more dense than other layer portions in the local portion in the protective layer.
The method according to claim 1,
The magnetic particle layer
Wherein the magnetic particles are denser than a surface of the protective layer and an inner portion of the surface layer portion beneath the surface.
The method according to claim 1,
The magnetic particle layer
Wherein the magnetic particles are relatively denser than other portions of the inner intermediate layer portion of the protective layer between the surface of the protective layer and the surface of the semiconductor chip.
The method according to claim 1,
The magnetic particle layer
Wherein the magnetic particles are different in thickness by region including a first portion of a thicker thickness and a second portion of a less dense and thinner thickness.
Mounting a semiconductor chip on a package substrate;
Forming a protective layer covering the semiconductor chip by flowing a protective material in which magnetic particles are dispersed in a fluidized state; And
And applying a magnetic field to the protective layer when the protective material is maintained in a fluid state to induce an electromagnetic wave shielding portion including a magnetic particle layer in which the magnetic particles are densely packed in a local portion of the protective layer.
Mounting a semiconductor chip on a package substrate;
Molding the protective material in which the magnetic particles are dispersed to form a protective layer; And
Applying a magnetic field to the protective layer while maintaining the protective material in a flowing state during the molding to induce an electromagnetic wave shielding portion including a magnetic particle layer in which the magnetic particles are densely packed in a local portion of the protective layer.
11. The method of claim 10,
The step of forming the protective layer
Applying a shape to the protective layer and introducing the package substrate into a mold to provide the magnetic field.
12. The method of claim 11,
Wherein the mold is introduced into the magnetic mold to provide the magnetic field.
12. The method of claim 11,
The mold
And a magnetic part for providing the magnetic field.
11. The method of claim 10,
The protective material
A dielectric material, a resin, and an epoxy molding material (EMC).
11. The method of claim 10,
Wherein the package substrate is introduced including a ground portion as wiring,
Wherein the electromagnetic wave shielding portion is guided to be electrically connected to the grounding portion.
11. The method of claim 10,
The magnetic particles
Wherein the semiconductor chip is moved in the protective layer so as to form a dome or a cap-like layer which locates the semiconductor chip inside by the magnetic field.
11. The method of claim 10,
The magnetic particles
Wherein the magnetic field is moved so as to converge more densely on the local portion in the protective layer than on other layer portions.
11. The method of claim 10,
The magnetic particles
The surface of the protective layer and the surface layer beneath the surface are moved to be gathered more densely than the inner portion by the magnetic field.
11. The method of claim 10,
The magnetic particles
Wherein the protective layer is moved so as to be gathered more densely than other portions in the inner intermediate layer portion of the protective layer between the surface of the protective layer and the surface of the semiconductor chip by the magnetic field.
11. The method of claim 10,
The magnetic particles
Wherein the magnetic particle layer comprises a first portion of a thicker thickness and a second portion of a less dense thickness wherein the magnetic particles are relatively more dense, .

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