KR20140078107A - Reflector for x-ray detector and menufacturing method there of - Google Patents
Reflector for x-ray detector and menufacturing method there of Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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Abstract
Disclosed is a reflector of an X-ray detector which improves image sensitivity of an X-ray detector without causing image distortion due to excessive reflection, and a manufacturing method thereof. In order to achieve the above object, the present invention provides a light emitting device comprising: a polymer base layer formed on a surface of a substrate; a phosphor layer formed on the base layer and reacting with X-rays to generate light in a visible light band; And a reflective layer formed by applying a dispersion film.
Description
The present invention relates to a reflector of an X-ray detector and a method of manufacturing the same. More particularly, the present invention relates to a reflector of an X-ray detector that improves image sensitivity of an X-ray detector while preventing an undesired image from being induced in the X- And a manufacturing method thereof.
Generally, an X-ray has a short wavelength and can easily penetrate an object. Such an X-ray can be determined depending on the density of the inside of the object. That is, the internal state of an object can be indirectly observed through the amount of transmission of the x-ray transmitted through the object.
The X-ray detector is a device for detecting the amount of X-rays transmitted through an object. The X-ray detector detects the amount of X-ray penetration, detects the internal state of the object, and the detected result can be expressed externally through LED, LED and other display devices. Using these features, x-ray detectors have been applied to medical examination apparatuses and non-destructive examination apparatuses.
The x-ray inspection method, which is widely used, is usually taken using an x-ray detection film, and a predetermined film printing process has to be performed in order to know the result. However, in recent years, development of semiconductor technology has led to the development of digital x-ray detectors using thin film transistors and photoelectric conversion elements.
An X-ray detector having such a photoelectric conversion substrate converts x-rays irradiated from the outside into a visible light band, that is, fluorescence once from a scintillator layer, and converts the fluorescence into an amorphous silicon (a-Si) photodiode or a CCD Device converts an x-ray into an analog electric signal by converting the x-ray into a digital electric signal through an AD converter, So that the digital image is displayed on the display device.
A phenomenon of pulse-like luminescence as a result of radiation being incident upon and interacting with a material is called a scintillation phenomenon, and the material is referred to as a scintillator (phosphor).
The scintillator is made of a fluorescent material that emits light when irradiated. The scintillators include organic and inorganic materials, gases, liquids, and solids, and are used depending on the target radiation and application. There are inorganic scintillators and organic scintillators. There are NaI (Tl), ZnS (Ag), CsI (Tl), and LiI (Tl) in the former. NaI (Tl) is most widely used because it has high detection efficiency for gamma rays and large photoelectric effect. The latter is representative of Andra. A phosphor used for radiation detection. As inorganic scintillators, fine crystals of ZnS-Ag are placed on glass for good use. NaI-Tl is a typical example. For thermal neutrons, 10 I or 6 Li is mixed with Li I-Eu or ZnS using 6Li (n,) reaction. For high-speed neutrons, there is a casting of ZnS together in the lucite. As an organic scintillator, anthracene stilbene and the like are frequently used, but terphenyl which is easy to make a good crystal is also used. Organic scintillators are low in specific gravity and unsuitable for lines. The plastic scintillator has a diameter of 100 and a thickness of 10, and can be made of a thin plate, which is superior to the organic scintillator. There is also a liquid scintillator, which is widely used for neutron detection.
When the scintillator layer is formed, a material is deposited by a vapor deposition method so that a groove is formed by dicing or the like or a columnar structure is formed. By providing the columnar structure in the scintillator layer as described above, the resolution characteristics can be improved.
There is a method of forming a reflective film on a scintillator layer in order to improve the efficiency of use of fluorescence from the scintillator layer to improve the sensitivity characteristic. That is, the fluorescence emitted from the scintillator layer toward the opposite side to the photoelectric conversion element side is reflected by the reflection film to increase the fluorescence reaching the photoelectric conversion element side.
As a method of forming a reflective film, for example, a method of forming a metal layer having a high fluorescent reflectance such as a silver alloy or aluminum on a scintillator layer is generally known. As another method, for example, Japanese Patent Application Laid-Open No. 2005-283483 (page 5-6, Fig. 1) discloses a method of applying a light scattering reflective reflecting material comprising a light-scattering material such as TiO2 and a binder resin. A method of reflecting a scintillator light by bringing a reflection plate having a metal surface such as aluminum into close contact with a scintillator layer without forming a reflection film on the scintillator film has also been put to practical use.
As a detector for X-ray diagnosis of a new generation, a planar X-ray detector using an active matrix has been developed. By detecting X-rays irradiated to the X-ray detector, an X-ray image pickup device or a real-time X-ray image is outputted as a digital signal. In this X-ray detector, an X-ray is converted into visible light, that is, fluorescence by a scintillator layer, and this fluorescence is converted into a signal charge (light) by a photoelectric conversion element such as an amorphous silicon (a-Si) photodiode or a CCD And acquires an image.
Such a digital X-ray detector includes a photoelectric conversion device in which a plurality of thin film transistors formed of a photodiode or a charge coupled device (CCD) including a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer are arranged in a matrix, And a scintillator for converting x-rays into visible light is formed on the photoelectric conversion substrate in an upper layer thereof. A reflection film is formed on the scintillator layer in order to improve the use efficiency of fluorescence from the scintillator layer to improve the sensitivity characteristic. That is, the fluorescence emitted from the scintillator layer toward the opposite side to the photoelectric conversion element side is reflected by the reflection film to increase the fluorescence reaching the photoelectric conversion element side.
As a method of forming a reflective film, for example, a method of forming a metal layer having a high fluorescent reflectance such as a silver alloy or aluminum on a scintillator layer is generally known. As another method, for example, Japanese Patent Application Laid-Open No. 2005-283483 (page 5-6, Fig. 1) discloses a method of applying a light scattering reflective reflecting material comprising a light-scattering material such as TiO2 and a binder resin. A method of reflecting a scintillator light by bringing a reflection plate having a metal surface such as aluminum into close contact with a scintillator layer without forming a reflection film on the scintillator film has also been put to practical use.
It is an object of the present invention to provide a reflective layer which is formed on a fluorescent layer (a scintillator layer) which generates light by collision with radiation and which is obtained by dispersing a white pigment in a polymer base material, thereby improving the image sensitivity of the x- Ray detector to prevent image distortion due to reflection, and a method of manufacturing the same. It is another object of the present invention to provide a radiation detector of high resolution and high luminance and a method of manufacturing the same.
According to the present invention, the above object can be attained by providing a polymer base material in the form of a plane, a fluorescent layer formed on the base material and reacting with an X-ray to generate light in a visible ray band, Surface is achieved by a reflective layer formed by dispersing a white pigment.
According to the present invention,
A step of forming a fluorescent layer on the polymer base layer which causes light in a visible light band upon reaction with X-ray, and a step of forming a fluorescent layer on the base layer and the fluorescent layer, And forming a reflective layer on the substrate.
According to the present invention, the image sensitivity of the X-ray detector can be improved without causing image distortion due to excessive reflection.
In addition, according to the present invention, a reflector of a digital X-ray and gamma ray image detector and a method of manufacturing the same can prevent an undesired external image from being displayed due to a high light reflectance and improve sensitivity of an X-ray image to obtain excellent image information. In addition, the Clean Room process is available, which makes it easier to manage foreign objects and pollutants to obtain high-resolution images, and the thickness of the coating film is more free to raise. Therefore, resolution lowering and luminance lowering due to reflected light can be suppressed, so that a high-resolution and high-luminance radiation detector can be provided.
Figure 1 shows a scintillator layer and reflector layer structure history of a digital x-ray and gamma ray image detector.
The present invention relates to an X-ray detection substrate, and more particularly, to a digital X-ray detection substrate that can improve the collection efficiency of light that is internally totally lost when acquiring image information by detecting X-rays transmitted through a human body.
The digital x-ray detection substrate refers to a panel for converting image information by x-rays acquired through the human body into electric signals and then digitizing and detecting the electric signals. The digital x-ray detection substrate is a system for converting an incident x- , It is largely divided into direct method and indirect method.
In the direct method, as the X-rays transmitted through the human body are incident on the X-ray receptor layer constituting the digital X-ray detection substrate, electrons and holes generated in the X-ray receptor layer are directly collected and used by applying external power. Layer is made of a fluorescent material, and then the X-ray transmitted through the human body is incident on the fluorescent material to use the luminescence phenomenon generated.
In the direct type digital X-ray detection substrate, the most commonly used substance as the X-ray receptor layer is selenium (amorphous selenium). Since selenium reacts more electrons and holes in the visible region than in the x-ray region, In order to detect x-rays more effectively, there is a disadvantage that a thick X-ray receptor layer is formed and a high-voltage power is applied to both ends of the X-ray receptor layer.
In order to improve the disadvantages of the direct and indirect methods, and to take advantage of the direct and indirect methods, a fluorescent layer used in an indirect method is bonded to an X-ray detection substrate for detecting X- A composite structure is proposed.
The composite structure is used to diversify the light region incident on the X-ray receptor layer. Some of the X-rays incident on the X-ray detection substrate are converted into visible light from the fluorescent layer, and then the converted visible light is incident on the X- Ray receptor layer so that electrons and holes can be generated in the X-ray receptor layer by visible light and X-rays.
However, in the case of using the presently proposed hybrid scheme, when light is incident on the electrode layer having a relatively low refractive index in a fluorescent layer having a relatively high refractive index, if the incident angle is greater than a critical angle, incident light is incident on the X- And it is lost.
When the X-rays transmitted through the human body are incident on the fluorescent layer, a part of the incident X-rays pass through the fluorescent layer directly to the X-ray receptor layer, and a part of the X-rays reacts with the substance constituting the fluorescent layer to generate visible light.
The visible light generated in the fluorescent layer has a radial traveling direction, and a part of the visible light travels upward and a part of the visible light travels downward. The visible light traveling upward is reflected by the reflective layer located on the fluorescent layer, Change.
On the other hand, as in the conventional case in which visible light traveling downward is transmitted from the fluorescent layer directly to the top surface electrode layer before the photonic crystal layer is inserted in the photonic crystal layer, visible light incident within a critical angle passes through the photonic crystal layer, To the receptor layer.
In the conventional method of forming the metal layer on the scintillator layer, there is a problem that the reflectance in the metal layer is low due to the influence of the irregularities on the surface of the scintillator layer. In order to improve the low reflectance, there is a countermeasure such as flattening the surface of the scintillator layer or forming a transparent resin protective film on the surface of the scintillator layer to smooth it. However, in this case, the surface of the scintillator layer is damaged to form a dead layer, and further the space between the columns of the scintillator layer is separated to improve the resolution by the light guide effect. However, Intrusion of the protective film damages the light guide effect, resulting in deterioration of the resolution. Therefore, the disadvantage of this case is large.
In addition, in the method of bringing the reflector into close contact with the scintillator layer, unevenness in brightness and resolution is caused by non-uniformity of the gap between the reflector and the scintillator layer. In addition, when a protective layer of resin is formed on the surface of the scintillator layer in order to protect the scintillator layer from moisture and moisture, the resin penetrates between the columns of the scintillator layer and is connected to a lower resolution.
In the method of applying a light scattering reflective reflective material composed of a light-scattering material such as TiO2 and a binder resin, a resin serving as a binder is filled tightly between the gaps of the light-scattering material such as TiO2. Therefore, the light scattering effect of a light-scattering material such as TiO 2 having a high refractive index is greatly reduced. This is because the refractive index difference (different refractive index difference) between TiO 2 (refractive index of 2.7) and the resin of the binder (refractive index of about 1.6) is smaller than the refractive index difference of TiO 2 (refractive index of 2.7) and air (refractive index of 1.0). Therefore, the refraction angle of the refraction generated at the interface between the TiO2 particle and its surroundings is reduced by the refractive index difference.
The light scattering material is to randomly change the light traveling direction by repeating interfacial reflections or interfacial reflections between the light scattering substance and the surrounding substance. Due to this effect, the film formed using the light scattering material serves as a reflective film. As described above, since the binder resin is filled tightly and the refractive index difference between the interface between the light scattering material and the surrounding material (= binder resin) becomes small as described above, the number of interfacial reflections and refractions necessary for changing the direction of the light randomly Increase. In other words, it means that the fluorescence needs to be turned far enough to change the direction to the same degree. This far distance is connected to the fact that the fluorescence diffuses toward both sides of the film thickness direction and the film surface direction of the reflection film. Therefore, the crosstalk of fluorescence between the columns of the scintillator layer increases through the inside of the reflection film, resulting in a reduction in resolution. Further, the luminance is lowered due to attenuation of fluorescence inside the reflective film.
SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and its object is to provide a radiation detector of high resolution and high luminance and a manufacturing method thereof.
In the method of forming a reflective layer, a method of forming a substance in which a white pigment is dispersed in a high-viscosity polymer base material prepared in a paste form by screen printing, and a method of forming a substance in which a white pigment is dispersed in a polymer base prepared at a low point by using a dispenser .
According to an aspect of the present invention, there is provided a radiation detector comprising:
A light scattering particle formed on the scintillator layer and reflecting fluorescence from the scintillator layer; and a light scattering particle formed on the scintillator layer and between the light scattering particle and the light scattering particle, Wherein the light scattering particles satisfy the relation of the volume of the light scattering particles / the volume of the binder material to 4/6, and the peripheral portion of the light scattering particles has a depletion portion not filled with the binder material, And a reflective film formed on the substrate.
According to another aspect of the present invention, there is provided a method of manufacturing a radiation detector, comprising: forming a photoelectric conversion element on a substrate; forming a scintillator layer on the photoelectric conversion element; And a solvent having a boiling point of 100 or higher to dissolve the binder material is applied on the scintillator layer and then dried to form a reflective film on the peripheral portion of the light scattering particle, As shown in Fig.
The reflector of the digital X-ray and gamma ray image detector and the method of manufacturing the reflector of the present invention can obtain an excellent image information by enhancing the sensitivity of the X-ray image because the unwanted external image is not displayed due to high light reflectance. In addition, the clean room process is possible, which makes it easier to manage foreign objects and pollutants to obtain high resolution images, and the film thickness is more free to raise. Therefore, resolution lowering and luminance lowering due to reflected light can be suppressed, so that a high-resolution and high-luminance radiation detector can be provided.
The present invention relates to a reflector of a digital X-ray and gamma ray image detector and a method for manufacturing the same, and more particularly, to a reflective material for a digital X-ray and gamma ray image detector and a method of manufacturing the reflector by using a material in which a white pigment is dispersed in a polymer base material, Thereby improving the sensitivity of the image and obtaining excellent image information.
Figure 1 shows a scintillator layer and reflector layer structure history of a digital x-ray and gamma ray image detector.
The present invention relates to a reflective layer of an X-ray detection substrate. In the method of applying a light-scattering reflective reflective material composed of a light-scattering material such as TiO2 and a binder resin to a reflective layer, Is tightly charged. Therefore, the light scattering effect of a light-scattering material such as TiO 2 having a high refractive index is greatly reduced. This is because the refractive index difference (different refractive index difference) between TiO 2 (refractive index of 2.7) and the resin of the binder (refractive index of about 1.6) is smaller than the refractive index difference of TiO 2 (refractive index of 2.7) and air (refractive index of 1.0). Therefore, the refraction angle of the refraction generated at the interface between the TiO2 particle and its surroundings is reduced by the refractive index difference. The light scattering material is a randomly changing direction of the light by repeating interfacial reflections or interfacial reflections between the light scattering material and the surrounding material. Due to this effect, the film formed using the light scattering material serves as a reflective film. As described above, since the binder resin is filled tightly and the refractive index difference between the interface between the light scattering material and the surrounding material (= binder resin) becomes small as described above, the number of interfacial reflections and refractions necessary for changing the direction of the light randomly Increase. In other words, it means that the fluorescence needs to be turned far enough to change the direction to the same degree. This far distance is connected to the fact that the fluorescence diffuses toward both sides of the film thickness direction and the film surface direction of the reflection film. Therefore, the crosstalk of fluorescence between the columns of the scintillator layer increases through the inside of the reflection film, resulting in a reduction in resolution. Further, the luminance is lowered due to attenuation of fluorescence inside the reflective film.
The present invention seeks to provide a high-resolution and high-luminance radiation detector and a manufacturing method thereof.
The reflective film reflects fluorescence emitted from the scintillator layer to the opposite side of the photodiode to increase the amount of fluorescent light reaching the photodiode. The binder material of the reflective film containing the light scattering particles is a thermosetting resin material such as a silicone resin or an epoxy resin or a thermoplastic resin material such as a polyvinyl acetal resin such as methacrylic resin or butyral resin such as acryl.
In the case of the binder material of the butyral resin, cracks are unlikely to occur in the coated film, and a high-quality reflective film can be formed.
In the case of the coating paste, the binder material is melted while heating the combination of the binder material and the solvent. Further, the light scattering particles are mixed and stirred. As a result, a coating paste is formed. When forming the reflective film 14 using a coating paste, a coating paste is applied on the scintillator layer 13 by a method such as brushing, a blade, a dispenser, or a contact metal screen printing, and is dried at room temperature or in an oven. Thereby, the reflective film 14 is formed.
As the light scattering particles of the reflective film 14, a rutile type TiO2 powder and a butyral resin are combined as a binder material. Here, the mass ratio of the rutile type TiO2 powder and the butyral resin is 90:10 in [KR] 10-1120244. Thereafter, a coating paste was prepared using cyclohexanone as a solvent. By changing the addition rate of cyclohexanone, the viscosity of the applied paste was changed. Then, a coating paste was applied on the scintillator layer 13 of the CsI: Tl deposited film to form the reflective film 14. As the ratio of the light scattering particles to the binder material (amount of light scattering particles / amount of binder material) is higher, a high-resolution reflective film 14 is obtained. The present invention relates to a reflector of a digital X-ray and gamma ray image detector and a method for manufacturing the same, and more particularly, to a reflective material for a digital X-ray and gamma ray image detector and a method of manufacturing the reflector by using a material in which a white pigment is dispersed in a polymer base material, Thereby improving the sensitivity of the image and obtaining excellent image information.
100: Synthetic layer 110: Phosphor layer
120: passivation layer 130: reflective layer
Claims (2)
A fluorescent layer formed on the substrate layer and reacting with X-rays to generate light in a visible light band; And
And a reflective layer formed on the fluorescent layer and having a white pigment dispersedly coated on one surface thereof.
And forming a reflective layer formed on the fluorescent layer and including a white pigment after the base layer and the fluorescent layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120147074A KR20140078107A (en) | 2012-12-17 | 2012-12-17 | Reflector for x-ray detector and menufacturing method there of |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120147074A KR20140078107A (en) | 2012-12-17 | 2012-12-17 | Reflector for x-ray detector and menufacturing method there of |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140078107A true KR20140078107A (en) | 2014-06-25 |
Family
ID=51129784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120147074A KR20140078107A (en) | 2012-12-17 | 2012-12-17 | Reflector for x-ray detector and menufacturing method there of |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20140078107A (en) |
-
2012
- 2012-12-17 KR KR1020120147074A patent/KR20140078107A/en not_active Application Discontinuation
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