KR20140006505A - Apparatus of processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing device including a process chamber, a substrate support part installed in the chamber to support one or more substrates and rotating in a predetermined direction, a chamber lead covering the process chamber while facing the substrate support part, and a gas spray part including a plurality of gas spray modules spraying gas to the substrate. The gas spray modules includes a ground electrode frame forming a plasma reaction space and a power electrode generating plasma discharge with the ground electrode frame by being formed in the frame. A first side of a central part of the substrate support part is higher than a second side of a border part of the substrate support part. [Reference numerals] (AA) Central part of a substrate support part; (BB) Border part of the substrate support part

Description

Apparatus of processing substrate

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of increasing the deposition uniformity of a thin film deposited on a substrate.

Generally, in order to manufacture a solar cell, a semiconductor device, a flat panel display, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on the surface of the substrate. For this purpose, A semiconductor manufacturing process such as a thin film deposition process, a photolithography process for selectively exposing a thin film using a photosensitive material, and an etching process for forming a pattern by selectively removing a thin film of an exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

The substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, a plasma etching apparatus for etching and patterning a thin film.

1 is a schematic view for explaining a conventional substrate processing apparatus.

Referring to FIG. 1, a general substrate processing apparatus includes a chamber 10, a power electrode 20, a susceptor 30, and a gas ejection means 40.

The chamber 10 provides a reaction space for the substrate processing process. At this time, the bottom surface of one side of the chamber 10 communicates with the exhaust port 12 for exhausting the reaction space.

The power electrode 20 is installed above the chamber 10 to seal the reaction space.

One side of the power source electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through the matching member 22. In this case, the RF power source 24 generates RF power and supplies the RF power to the power electrode 20.

In addition, the central portion of the power supply electrode 20 is in communication with the gas supply pipe 26 for supplying the source gas for the substrate processing process.

The matching member 22 is connected between the power supply electrode 20 and the RF power supply 24 to match the load impedance and source impedance of the RF power supplied from the RF power supply 24 to the power supply electrode 20.

The susceptor 30 is installed inside the chamber 10 to support a plurality of substrates W to be loaded from the outside. The susceptor 30 is an opposite electrode facing the power supply electrode 20, and is electrically grounded through the lifting shaft 32 for elevating the susceptor 30.

The elevating shaft 32 is vertically elevated and lowered by an elevating device (not shown). At this time, the lifting shaft 32 is surrounded by the bellows 34 that seals the lifting shaft 32 and the bottom surface of the chamber 10.

The gas injection means 40 is installed under the power supply electrode 20 so as to face the susceptor 30. At this time, a gas diffusion space 42 through which the source gas supplied from the gas supply pipe 26 penetrating the power electrode 20 is formed between the gas injection means 40 and the power electrode 20. The gas injection means 40 uniformly injects the source gas to the entire portion of the reaction space through the plurality of gas injection holes 44 communicated with the gas diffusion space 42.

In the conventional substrate processing apparatus, the substrate W is loaded into the susceptor 30, and then plasma is supplied by supplying RF power to the power electrode 20 while injecting a predetermined source gas into the reaction space of the chamber 10. By forming a predetermined thin film on the substrate (W).

However, in the conventional substrate processing apparatus, since the space in which the source gas is injected and the space in which the plasma is formed are the same, there is a problem in that the substrate W is damaged by plasma discharge and thus the film quality is deteriorated.

The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a substrate processing apparatus capable of preventing substrate damage caused by plasma discharge.

Moreover, another object of this invention is to provide the substrate processing apparatus which can form the thin film of uniform thickness on a board | substrate.

The present invention to achieve the above object, a process chamber; A substrate support installed in the process chamber to support at least one substrate, the substrate support being configured to rotate in a predetermined direction; A chamber lid facing the substrate support and covering the top of the process chamber; And a gas injector connected to the chamber lid and having a plurality of gas injector modules for injecting gas onto the substrate, wherein the gas injector module comprises: a ground electrode frame forming a plasma reaction space; And a power electrode formed in the ground electrode frame and generating a plasma discharge together with the ground electrode frame, wherein the power electrode is formed on the edge portion of the substrate support portion rather than the height of the first side of the center side of the substrate support portion. Provided is a substrate processing apparatus characterized in that the height of two sides is large.

The third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode may have an inclined straight line shape.

The third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode may have a step shape.

The third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode may have a straight shape parallel to the substrate support.

The third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode, one part of which is formed in an inclined straight line shape and the other part is horizontal to the substrate support. It can be made in a straight form.

A third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode has a straight portion that is formed in a step shape and the other part is horizontal with the substrate support. It may be made in the form.

The invention also provides a process chamber; A substrate support installed in the process chamber to support at least one substrate, the substrate support being configured to rotate in a predetermined direction; A chamber lid facing the substrate support and covering the top of the process chamber; And a gas injector connected to the chamber lid and having a plurality of gas injector modules for injecting gas onto the substrate, wherein the gas injector module comprises: a ground electrode frame forming a plasma reaction space; And a power electrode formed in the ground electrode frame to generate a plasma discharge together with the ground electrode frame, wherein the ground electrode frame is formed at a first ground sidewall formed at a center of the substrate support and at an edge of the substrate support. And a second ground sidewall, wherein a height of the second ground sidewall is greater than a height of the first ground sidewall.

The ground electrode frame includes a third ground sidewall connected to the first ground sidewall and the second ground sidewall, and the third ground sidewall is greater than the height of the first side of the central side of the substrate support. The height of the second side of the edge of the side may be large.

The invention also provides a process chamber; A substrate support installed in the process chamber to support at least one substrate, the substrate support being configured to rotate in a predetermined direction; A chamber lid facing the substrate support and covering the top of the process chamber; And a gas injector connected to the chamber lid and having a plurality of gas injector modules for injecting gas onto the substrate, wherein the gas injector module comprises: a ground electrode frame forming a plasma reaction space; And a power electrode formed in the ground electrode frame to generate plasma discharge together with the ground electrode frame, wherein the amount of plasma discharge at the edge of the substrate support is greater than the plasma discharge at the center of the substrate support. A substrate processing apparatus is provided.

The gas injection module may include a first gas injection space for injecting a first gas spaced apart from each other and a second gas injection space for injecting a second gas.

The gas injection module may include a ground partition member that separates the first gas injection space and the second gas injection space, and the ground partition wall member may have a height greater than that of a first side of the central side of the substrate support. The height of the second side on the edge side may be large.

The power electrode may be formed in both the first gas injection space and the second gas injection space.

A gas hole pattern member may be further formed in the second gas injection space to prevent the first gas injected from the first gas injection space from flowing into the second gas injection space.

The power electrode may extend in a direction perpendicular to the substrate surface.

The gas injected from any one of the plurality of gas injection modules and the gas injected from the other gas injection module may be different from each other.

At least one gas injection module of the plurality of gas injection modules may include one gas injection space.

According to the said structure, it has the following effects.

According to the present invention, since the plasma discharge is not performed in the region between the power supply electrode and the substrate as in the prior art, the plasma discharge is performed in the ground electrode frame constituting the gas injection module, thereby preventing damage to the substrate due to the plasma discharge.

Further, according to the present invention, the power electrode or the ground electrode frame is formed so that the height at the edge of the substrate support portion is larger than the center portion of the substrate support portion, thereby canceling the difference in thickness of the thin film due to the linear velocity difference of the rotating substrate support portion As a result, a uniform thin film may be formed on the substrate W. As shown in FIG.

1 is a schematic view for explaining a conventional substrate processing apparatus.
2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
3 is a view conceptually illustrating a plurality of gas injection modules disposed on a substrate support according to an embodiment of the present invention.
4 is a schematic exploded perspective view of a gas injection module according to an embodiment of the present invention.
5A through 5F are cross-sectional views of a power electrode according to various embodiments of the present disclosure.
6 is a cross-sectional view showing a gas injection module according to an embodiment of the present invention.
7 is a cross-sectional view showing a gas injection module according to another embodiment of the present invention.
8 is a cross-sectional view showing a gas injection module according to another embodiment of the present invention.
9 is a cross-sectional view showing a gas injection module according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

2 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention, Figure 3 is a view conceptually showing a plurality of gas injection module disposed on the substrate support according to an embodiment of the present invention.

2 and 3, a substrate processing apparatus according to an embodiment of the present invention may include a process chamber 110, a chamber lid 115, a substrate support 120, and a gas injector 130. It is configured to include.

The process chamber 110 provides a reaction space for a substrate processing process (eg, a thin film deposition process). The bottom surface or the side surface of the process chamber 110 may be in communication with an exhaust pipe (not shown) for exhausting the gas of the reaction space.

The chamber lid 115 is installed on the process chamber 110 to cover the top of the process chamber 110 and is electrically grounded. The chamber lid 115 supports the gas injector 130, and includes a plurality of module mounting portions 115a, 115b, 115c, and 115d formed to divide the upper portion of the substrate support 120 into a plurality of spaces. Is done. In this case, the plurality of module installation units 115a, 115b, 115c, and 115d may be formed in a radial shape on the chamber lead 115 while being spaced at an angle of 90 degrees with respect to the center point of the chamber lead 115.

The process chamber 110 and the chamber lid 115 may be formed in a polygonal structure, such as a hexagon, as shown, but may be formed in a circular or elliptical structure.

In FIG. 2, the chamber lid 115 is shown as having four module mounting portions 115a, 115b, 115c, 115d, but is not limited thereto, and the chamber lid 115 is symmetrical with respect to its center point. 2N (where N is a natural number) can be provided. However, the present invention is not limited thereto, and an odd number of module installation units may be provided. Hereinafter, it will be assumed that the chamber lid 115 includes the first to fourth module mounting portions 115a, 115b, 115c, and 115d.

The reaction space of the process chamber 110 sealed by the chamber lid 115 described above may be connected to an external pumping means (not shown) through a pumping pipe 117 installed in the chamber lid 115.

The pumping pipe 117 is in communication with the reaction space of the process chamber 110 through the pimping hole 115e formed in the center of the chamber lid 115. Accordingly, the inside of the process chamber 110 is in a vacuum state or an atmospheric pressure state according to the pumping operation of the pumping means through the pumping pipe 117. In this case, the exhaust space of the reaction space uses the upper central exhaust method using the pumping pipe 117 and the pumping hole 115e. However, the present invention is not limited thereto, and the pumping pipe 117 and the pumping hole 115e may be omitted.

The substrate support 120 may be rotatably installed in the process chamber 110, and may be electrically floated or grounded. The substrate support part 120 is supported by a rotating shaft penetrating the central bottom surface of the process chamber 110. The rotation shaft rotates in response to the driving of the shaft driving member (not shown) to rotate the substrate support part 120 in a predetermined direction (for example, counterclockwise direction). In addition, the rotating shaft exposed to the outside of the lower surface of the process chamber 110 may be sealed by a bellows (not shown) installed on the lower surface of the process chamber 110.

The substrate supporter 120 may be connected to a predetermined lifting mechanism to move up and down.

The substrate support 120 supports at least one substrate W loaded from an external substrate loading apparatus (not shown). In this case, the substrate support part 120 is formed to have a disc shape, and supports the plurality of substrates W, for example, a semiconductor substrate or a wafer. In this case, the plurality of substrates W may be disposed in a circle shape at regular intervals on the substrate support 120 to improve productivity.

The gas injection unit 130 is inserted into each of the first to fourth module installation units 115a, 115b, 115c, and 115d of the chamber lid 115 to be spaced apart from the center point of the substrate support unit 120. To fourth gas injection modules 130a, 130b, 130c, and 130d. Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d injects the first gas and the second gas G1 and G2 into the gas injection region on the substrate support 120. As a result, a thin film layer is formed on the substrate (W).

The first gas G1 may be activated by plasma discharge and injected onto the substrate W. The first gas G1 may react with a source gas SG to be described later to form a thin film layer ( Reactant Gas (RG). For example, the reaction gas RG may include at least one kind of gas selected from nitrogen (N 2), oxygen (O 2), nitrogen dioxide (N 2 O), and ozone (O 3).

The second gas G2 may be formed of a source gas SG including a thin film material to be deposited on the substrate W. The source gas may include a thin film material such as silicon (Si), titanium group elements (Ti, Zr, Hf, etc.), or aluminum (Al). For example, the source gas containing a thin film of silicon (Si) may be Tetraethylorthosilicate (TEOS), Dichlorosilane (DCS), Hexachlorosilane (HCD), Tri-dimethylaminosilane (TriDMAS), Trisilylamine (TSA), SiH2Cl2, SiH4, Si2H6. , Si3H8, Si4H10, and Si5H12.

4 is a schematic exploded perspective view of a gas injection module according to an embodiment of the present invention.

As can be seen in Figure 4, the gas injection module according to an embodiment of the present invention, the ground electrode frame 210, the insulating member 240, and comprises a power electrode 250.

The ground electrode frame 210 forms a plasma discharge space, and thus, plasma discharge is performed in the ground electrode frame 210. In addition, the ground electrode frame 210 functions as a ground electrode to generate a plasma discharge together with the power electrode 250.

The ground electrode frame 210 includes a top plate 210a and a ground sidewall 210b.

The upper plate 210a constitutes an upper surface of the ground electrode frame 210 and is formed in a rectangular shape so that the corresponding module mounting portion (115a, 115b, 115c, and 115d of FIG. 2) of the chamber lid (115 in FIG. 2). Is coupled to. An insulating member support hole 212, a first gas supply hole 214, and a second gas supply hole 216 are formed in the upper plate 210a. The insulating member support hole 212 allows the insulating member 240 to be inserted into the ground electrode frame 210. The first gas supply hole 214 and the second gas supply hole 216 allow the source gas and the reactant gas to flow into the ground electrode frame 210.

The ground sidewall 210b constitutes a side surface of the ground electrode frame 210 and is formed on all four sides of the top plate 210b having a rectangular shape. That is, the ground sidewall 210b may include a first ground sidewall 210b1 formed at the center of the substrate supporter 120 (FIG. 2), a second ground sidewall 210b2 formed at an edge of the substrate supporter 120 (FIG. 2), And a third ground sidewall 210b3 connecting the first battery sidewall 210b1 and the second ground sidewall 210b2.

In this case, the height D2 of the second ground sidewall 210b2 is greater than the height D1 of the first ground sidewall 210b1. This is for thickness uniformity between the thin film deposited at the center of the substrate support (120 in FIG. 2) and the thin film deposited at the edge of the substrate support (120 in FIG. 2).

That is, referring to FIG. 2, when the substrate support part 120 rotates, the linear velocity at its center portion is lower than the linear velocity at its edge portion. Therefore, there is a problem in that the thickness of the thin film deposited at the center of the substrate support 120 is thicker than the thickness of the thin film deposited at the edge of the substrate support 120. In order to solve this problem, in one embodiment of the present invention, the second formed on the edge portion of the substrate support portion 120 than the height D1 of the first ground side wall 210b1 formed at the center of the substrate support portion 120 By forming the height D2 of the ground sidewall 210b2 to be large, a difference in the linear velocity of the substrate support 120 can be achieved by allowing more thin film deposition to occur at the edge of the substrate support 120 than at the center of the substrate support 120. By offsetting the difference in thickness of the thin film by, as a result, a uniform thin film can be formed on the substrate (W).

On the other hand, the height of a certain configuration in this specification means the length in the vertical direction with respect to the configuration.

The insulating member 240 functions to insulate the ground electrode frame 210 functioning as a power electrode and a ground electrode. The insulating member 240 is inserted into the insulating member support hole 212 formed in the ground electrode frame 210. In addition, the insulating member 240 is provided with an electrode insertion hole 241 so that the power electrode 250 is inserted into the ground electrode frame 210 through the electrode insertion hole 241.

The power electrode 250 is inserted into the ground electrode frame 210 through the electrode insertion hole 241 of the insulating member 240. Therefore, plasma discharge occurs between the power supply electrode 250 and the ground electrode frame 210.

The power electrode 250 may be formed in a quadrangular shape. In this case, the height L2 of the second side of the edge of the substrate support 120 may be higher than the height L1 of the first side of the substrate support 120. May be formed to be large, and the reason thereof is the same as that of forming the height D2 of the second ground sidewall 210b2 larger than the height D1 of the first ground sidewall 210b1 described above. That is, by forming the height L2 of the second side of the edge of the substrate support part 120 larger than the height L1 of the first side of the center of the substrate support part 120, the edge of the substrate support part 120 is formed. More plasma discharge is generated, and thus, a relatively large ion dissociation effect can be obtained at the edge of the substrate support 120.

5A through 5F are cross-sectional views of a power electrode 250 according to various embodiments of the present disclosure.

As can be seen in FIG. 5A, the power electrode 250 has a second side 250b closer to the edge of the substrate support 120 than the height L1 of the first side 250a at the central side of the substrate support 120. The height L2 of is formed large.

At this time, the third side 250c connecting the bottom of the first side 250a and the bottom of the second side 250b has an inclined straight line shape. In addition, the fourth side 250d connecting the upper end of the first side 250a and the upper end of the second side 250b has a straight line shape that is parallel to the substrate support part 120.

As can be seen in FIG. 5B, the power electrode 250 has a second side 250b closer to the edge of the substrate support 120 than the height L1 of the first side 250a at the central side of the substrate support 120. The height L2 of is formed large.

At this time, the third side 250c connecting the bottom of the first side 250a and the bottom of the second side 250b has a step shape. In addition, the fourth side 250d connecting the upper end of the first side 250a and the upper end of the second side 250b has a straight line shape that is parallel to the substrate support part 120.

As can be seen in FIG. 5C, the power electrode 250 has a second side 250b closer to the edge of the substrate support 120 than the height L1 of the first side 250a at the central side of the substrate support 120. The height L2 of is formed large.

At this time, the third side 250c connecting the bottom of the first side 250a and the bottom of the second side 250b has an inclined straight line shape. In addition, the fourth side 250d connecting the upper end of the first side 250a and the upper end of the second side 250b also has an inclined straight line shape. However, the inclination of the third side 250c and the inclination of the fourth side 250d are opposite to each other.

As can be seen in FIG. 5D, the power electrode 250 has a second side 250b closer to the edge of the substrate support 120 than the height L1 of the first side 250a at the central side of the substrate support 120. The height L2 of is formed large.

At this time, the third side 250c connecting the lower end of the first side 250a and the lower end of the second side 250b has a straight line shape that is parallel to the substrate support part 120. In addition, the fourth side 250d connecting the upper end of the first side 250a and the upper end of the second side 250b has an inclined straight line shape.

As can be seen in FIG. 5E, the power electrode 250 has a second side 250b closer to the edge of the substrate support 120 than the height L1 of the first side 250a at the central side of the substrate support 120. The height L2 of is formed large.

At this time, the third side 250c connecting the lower end of the first side 250a and the lower end of the second side 250b has one portion (for example, a portion near the edge of the substrate support 120). The remaining portion (eg, a portion close to the center of the substrate support part 120) is formed in an inclined straight line shape and is formed in a straight shape parallel to the substrate support part 120. In addition, the fourth side 250d connecting the upper end of the first side 250a and the upper end of the second side 250b has a straight line shape that is parallel to the substrate support part 120.

As can be seen in FIG. 5E, the power electrode 250 has a second side 250b closer to the edge of the substrate support 120 than the height L1 of the first side 250a at the central side of the substrate support 120. The height L2 of is formed large.

At this time, the third side 250c connecting the lower end of the first side 250a and the lower end of the second side 250b has one portion (for example, a portion near the edge of the substrate support 120). The remaining portion (eg, a portion close to the center of the substrate support portion 120) is formed in a straight line shape parallel to the substrate support portion 120. In addition, the fourth side 250d connecting the upper end of the first side 250a and the upper end of the second side 250b has a straight line shape that is parallel to the substrate support part 120.

As described above, the power electrode 250 according to various embodiments of the present disclosure is illustrated, and the power electrode 250 according to the present invention is not limited to FIGS. 5A to 5D, but according to the present invention. 250 may be changed to various shapes in which the height L2 of the second side 250b is larger than the height L1 of the first side 250a.

Although not shown, the third ground sidewall 210b3 of FIG. 4 may also be changed in various forms, similar to the power electrode 250 of FIGS. 5A to 5D.

That is, the third ground sidewall 210b3 is arranged to be parallel to the power electrode 250, and the third ground sidewall 210b3 is also higher than the height of the first side of the center side of the substrate support 120. The height of the second side of the edge portion of the side is formed large, wherein the third side connecting the lower end of the first side and the lower side of the second side and the form of the fourth side connecting the upper end of the first side and the second side May be changed in various ways.

6 is a cross-sectional view of a gas injection module according to an embodiment of the present invention, which corresponds to a cross section of the AA ′ line of FIG. 4. Hereinafter, a gas injection module according to an embodiment of the present invention will be described in more detail with reference to FIG. 6.

As shown in FIG. 6, each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d includes a ground electrode frame 210, a gas hole pattern member 230, an insulation member 240, and a power source. It is configured to include an electrode (250).

The ground electrode frame 210 is formed to have a first gas injection space S1 for injecting the first gas G1 and a second gas injection space S2 for injecting the second gas G2. The ground electrode frame 210 is inserted into and installed in each module installation unit 115a, 115b, 115c, or 115d of the chamber lead 115 to be electrically grounded through the chamber lead 115. To this end, the ground electrode frame 210 is composed of a top plate 210a, a ground sidewall 210b, and a ground partition member 210c.

The upper plate 210a is formed in a rectangular shape and is coupled to the corresponding module mounting portions 115a, 115b, 115c, and 115d of the chamber lid 115. An insulating member support hole 212, a first gas supply hole 214, and a second gas supply hole 216 are formed in the upper plate 210a.

The insulating member support hole 212 is formed through the upper plate 210a to communicate with the first gas injection space S1. The insulating member support hole 212 may be formed to have a plane having a rectangular shape.

The first gas supply hole 214 is formed through the upper plate 210a to communicate with the first gas injection space S1. The first gas supply hole 214 is connected to an external first gas supply means (not shown) through a gas supply pipe (not shown), so that the first gas supply hole 214 is connected to the first gas supply pipe (not shown) by the first gas supply pipe. The gas G1, that is, the reaction gas is supplied. The first gas supply hole 214 may be formed in plural so as to have a predetermined interval on both sides of the insulating member support hole 212 and communicate with the first gas injection space S1. The first gas G1 supplied to the first gas supply hole 214 is supplied to the first gas injection space S1 to be activated by plasma discharge in the first gas injection space S1, and has a first pressure. Sprayed downward toward the substrate. To this end, a lower surface of the first gas injection space S1 serves as a first gas injection hole 231 having a shape that is entirely opened without a separate gas injection hole pattern so that the first gas G1 is injected downward toward the substrate. do.

The second gas supply hole 216 is formed through the top plate 210a to communicate with the second gas injection space S2. The second gas supply hole 216 is connected to an external second gas supply means (not shown) through a gas supply pipe (not shown), so that the second gas supply hole 216 is connected to a second gas supply pipe (not shown) through a gas supply pipe. Gas G2, that is, the source gas is supplied. The second gas supply holes 216 may be formed in plural so as to have a predetermined interval in the upper plate 210a and communicate with the second gas injection space S2.

Each of the plurality of ground sidewalls 210b protrudes vertically from the lower surface of the long side and short side edges of the top plate 210a to have a predetermined height to form a rectangular bottom surface opening in the lower portion of the top plate 210a. Each of the ground sidewalls 210b is electrically grounded through the chamber lead 115 to serve as a ground electrode.

The ground partition wall member 210c protrudes vertically from the central lower surface of the top plate 210a to have a predetermined height and is disposed in parallel with the long sides of the ground sidewalls 210b. The first and second gas injection spaces S1 and S2 are separated from each other by the ground partition member 210c. As such, the ground partition member 210c is integrally or electrically coupled to the ground electrode frame 210 to be electrically grounded through the ground electrode frame 210 to serve as a ground electrode.

The ground partition wall member 210c is formed in the same shape as the third ground sidewall 210b3 described above.

In the above description of the ground electrode frame 210, the ground electrode frame 210 has been described as being composed of an upper plate 210a, ground sidewalls 210b, and a ground partition member 210c, but is not limited thereto. The electrode frame 210 may have a body in which the top plate 210a, the ground sidewalls 210b, and the ground partition member 210c are integrated with each other.

The positions of the first and second gas injection spaces S1 and S2 of the ground electrode frame 210 may be changed. That is, the positions of the first and second gas injection spaces S1 and S2 are the first gas after the substrate W, which rotates according to the rotation of the substrate support 120, is first exposed to the second gas G2. It may be set to be exposed to G1), or may be set to be exposed to the first gas G1 first and then to the second gas G2.

The gas hole pattern member 230 is installed in the second gas injection space S2 so that the first gas G1 injected from the adjacent first gas injection space S1 with the ground partition member 210c interposed therebetween is formed. The diffusion, backflow, and penetration into the two gas injection spaces S2 are prevented. That is, when the first gas G1 diffuses, flows back, and penetrates into the second gas injection space S2, the first gas G1 and the second gas in the second gas injection space S2. (G2) may react, and as a result, an abnormal thin film may be deposited on the inner wall of the second gas injection space S2 or an abnormal thin film of a powder component may be formed to generate particles falling on the substrate. Accordingly, the gas hole pattern member 230 may prevent the abnormal thin film from being deposited on the inner wall of the second gas injection space S2 or the abnormal thin film of the powder component.

The gas hole pattern member 230 may be disposed on the bottom surfaces of each of the ground sidewalls 210b and the ground partition wall member 210c that provide the second gas injection space S2 to cover the bottom surface of the second gas injection space S2. It may be integrated or formed in the form of an insulating plate (or shower head) made of an insulating material having no polarity and may be coupled to the bottom surface of the second gas injection space S2. Accordingly, a predetermined gas diffusion space or gas buffering space is provided in the second gas injection space S2 between the upper plate 210a of the ground electrode frame 210 and the gas hole pattern member 230.

The gas hole pattern member 230 includes a plurality of second gas injection holes 232 which downwardly inject the second gas G2 supplied to the second gas injection space S2 toward the substrate through the second gas supply hole 216. It is configured to include).

The plurality of second gas injection holes 232 are formed in a hole pattern shape so as to communicate with the second gas injection space S2 through which the second gas G2 is diffused, thereby converting the second gas G2 into the first gas. The jet is injected downward toward the substrate at a second pressure higher than the injection pressure of (G1). As such, the gas hole pattern member 230 increases the injection pressure of the second gas G2 to be sprayed onto the substrate so that the first gas G1 to be injected from the first gas injection space S1 is jetted to the second gas. To prevent diffusion, backflow, and penetration into space S2.

In addition, the gas hole pattern member 230 injects the second gas G2 downward through the second gas injection hole 232, and delays the second gas G2 due to the plate shape in which the hole is formed. The amount of the second gas G2 can be reduced by stagnation. In addition, the flow rate of the gas can be adjusted by adjusting the hole pattern shape of the gas injection port 232, thereby increasing the use efficiency of the second gas G2.

The insulating member 240 is made of an insulating material and inserted into the insulating member support hole 212 formed in the ground electrode frame 210 and is coupled to the upper surface of the ground electrode frame 210 by a fastening member (not shown). The insulating member 240 includes an electrode insertion hole in communication with the first gas injection space S1.

The power electrode 250 is made of a conductive material and is inserted through the electrode insertion hole of the insulating member 240 to protrude to a predetermined height from the lower surface of the ground electrode frame 210 and is disposed in the first gas injection space S1. In this case, the power electrode 250 may protrude to the same height as the sidewall 210b of the ground partition member 210c and the ground electrode frame 210 that function as the ground electrode.

The power electrode 250 is electrically connected to the plasma power supply unit 140 through a feed cable to cause plasma discharge in the first gas injection space S1 according to the plasma power supplied from the plasma power supply unit 140. That is, the plasma discharge is generated between each of the ground sidewall 210b and the ground partition member 210c serving as the ground electrode and the power electrode 250 to which plasma power is supplied, thereby supplying the first gas injection space S1. The first gas G1 to be activated.

The plasma power supply unit 140 generates plasma power having a predetermined frequency, and supplies the plasma power to each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d through a feed cable or separately. Supply. In this case, the plasma power is supplied with high frequency (eg, High Frequency (HF) power or Very High Frequency (VHF) power. For example, the HF power has a frequency in the range of 3 MHz to 30 MHz, and the VHF power is It may have a frequency in the range of 30MHz to 300MHz.

On the other hand, an impedance matching circuit (not shown) is connected to the feed cable. The impedance matching circuit matches the load impedance and the source impedance of the plasma power source supplied from the plasma power supply unit 140 to each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d. The impedance matching circuit may be composed of at least two impedance elements (not shown) constituted by at least one of a variable capacitor and a variable inductor.

Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d described above generates a plasma discharge in the first gas injection space S1 according to the plasma power supplied to the power electrode 250 to generate the first gas. The first gas G1 of the injection space S1 is activated and injected downward, and at the same time, the second gas G2 of the second gas injection space S2 is lowered to a predetermined pressure through the gas hole pattern member 230. Spray.

On the other hand, the gas (for example, the first gas (G1) and / or the second gas (G2)) to be injected from the first to fourth gas injection module (130a, 130b, 130c, 130d) are each gas injection module Need not all be the same and may be different from each other, such that a plurality of different layers can be stacked.

Although not shown, at least one of the first to fourth gas injection modules 130a, 130b, 130c, and 130d may include a first gas injection space S1 and a second gas injection space S2. Only one gas injection space may be provided, and in this case, one gas injection module may inject a source gas, and another gas injection module may inject a reaction gas to be laminated by ALD (atomic layer deposition). A layer having the same characteristics can be obtained.

In addition, at least one of the first to fourth gas injection modules 130a, 130b, 130c, and 130d may have the same size as that of the first gas injection space S1 and the second gas injection space S2. It may be formed, but is not necessarily limited thereto, and may be formed in different sizes from each other.

As described above, the substrate processing method using the substrate processing apparatus 100 according to the embodiment of the present invention is as follows.

A plurality of gas injection modules 130a, 130b, 130c, and 130d are installed in the process chamber 110, and at least one substrate W is mounted on the substrate support 120.

Thereafter, the substrate support 120 is rotated, and the first gas G1 and the second gas G2 are transferred to the substrate W through at least one gas injection module of the plurality of gas injection modules while causing plasma discharge. A thin film forming process of spraying downward onto the phase is performed. As a result, a thin film layer is formed on the substrate (W).

As described above, according to the present invention, since the reaction gas and the source gas are separately injected in the first gas injection space S1 and the second gas injection space S2 provided to be spatially separated from each other, separate control of the reaction gas and the source gas is performed. It is possible to easily control the film quality of the laminated thin film layer and the deposition rate of the laminated thin film layer.

In addition, in the present invention, the plasma discharge space is not formed in the region between the power supply electrode and the substrate as in the prior art, but is formed between the power supply electrode and the ground electrode facing each other, thereby preventing damage to the substrate W due to the plasma discharge. Can be. In addition, according to an embodiment of the present invention, since the power supply electrode 250 and the ground electrode extend in a direction perpendicular to the surface of the substrate W, positive or electrons generated by plasma discharge are generated on the substrate W surface. It does not move to, but moves in the direction of the power electrode 250 or the ground electrode that is parallel to the surface of the substrate (W), thereby minimizing the influence of the substrate (W) due to the plasma discharge.

In addition, while the source gas is conventionally injected into the entire region on the substrate, the use efficiency of the source gas is lowered, whereas according to the present invention, the use efficiency of the source gas is achieved by using the plurality of gas injection modules 130a, 130b, 130c, and 130d. This can be improved.

FIG. 7 is a cross-sectional view illustrating a gas injection module according to another embodiment of the present invention, in which a power electrode 250 is further formed in the second gas injection space S2 of the gas injection module illustrated in FIG. 6. Hereinafter, only different configurations will be described.

As can be seen in Figure 7, according to another embodiment of the present invention, the power electrode 250 is further formed in the second gas injection space (S2). To this end, an insulating member support hole 215 is formed in communication with the second gas injection space S2 and penetrates the upper plate 210a, and the insulating member 240 is inserted into the insulating member support hole 215. . In this case, the insulation member 240 includes an electrode insertion hole communicating with the second gas injection space S2, and the power electrode 450 protrudes through the electrode insertion hole.

As such, the structure of the power electrode 250 formed in the second gas injection space S2 may be the same as that of the power electrode 250 formed in the first gas injection space S1.

FIG. 8 is a cross-sectional view illustrating a gas injection module according to another exemplary embodiment, in which the gas hole pattern member 230 is omitted in the second gas injection space S2 of the gas injection module illustrated in FIG. 6. . That is, although the advantages as described above can be obtained by the gas hole pattern member 230, the gas hole pattern member 230 is not necessarily required.

FIG. 9 is a cross-sectional view illustrating a gas injection module according to another exemplary embodiment, in which the gas hole pattern member 230 is omitted in the second gas injection space S2 of the gas injection module illustrated in FIG. 7. .

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

110: process chamber 115: chamber lead
120: substrate support 130: gas injection unit
130a: first gas injection module 130b: second gas injection module
130c: third gas injection module 130d: fourth gas injection module
140: plasma power supply 210: ground electrode frame
230: gas hole pattern member 250: power electrode

Claims (16)

A process chamber;
A substrate support installed in the process chamber to support at least one substrate, the substrate support being configured to rotate in a predetermined direction;
A chamber lid facing the substrate support and covering the top of the process chamber; And
A gas injector connected to the chamber lid and having a plurality of gas injector modules for injecting gas onto the substrate,
In this case, the gas injection module includes a ground electrode frame forming a plasma reaction space and a power electrode formed in the ground electrode frame to cause plasma discharge together with the ground electrode frame,
And the power supply electrode has a height greater than that of the first side of the center of the substrate support, and the height of the second side of the edge of the substrate support. The method of claim 1,
And a third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode has an inclined straight line shape. The method of claim 1,
And a third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode has a step shape. The method of claim 1,
And a third side of the power electrode connecting a lower end of the first side of the power electrode and a lower end of the second side of the power electrode to have a straight line parallel to the substrate support. The method of claim 1,
The third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode, one part of which is formed in an inclined straight line shape and the other part is horizontal to the substrate support. Substrate processing apparatus, characterized in that formed in a straight line form. The method of claim 1,
A third side of the power electrode connecting the lower end of the first side of the power electrode and the lower end of the second side of the power electrode has a straight portion that is formed in a step shape and the other part is horizontal with the substrate support. Substrate processing apparatus, characterized in that formed in the form. A process chamber;
A substrate support installed in the process chamber to support at least one substrate, the substrate support being configured to rotate in a predetermined direction;
A chamber lid facing the substrate support and covering the top of the process chamber; And
A gas injector connected to the chamber lid and having a plurality of gas injector modules for injecting gas onto the substrate,
In this case, the gas injection module includes a ground electrode frame forming a plasma reaction space and a power electrode formed in the ground electrode frame to cause plasma discharge together with the ground electrode frame,
The ground electrode frame may include a first ground sidewall formed at the center of the substrate support and a second ground sidewall formed at an edge of the substrate support.
And a height of the second ground sidewall is greater than a height of the first ground sidewall. The method of claim 7, wherein
The ground electrode frame includes a third ground sidewall connected to the first ground sidewall and the second ground sidewall, and the third ground sidewall is greater than the height of the first side of the central side of the substrate support. The height of the 2nd side of the edge part side of a substrate is large. A process chamber;
A substrate support installed in the process chamber to support at least one substrate, the substrate support being configured to rotate in a predetermined direction;
A chamber lid facing the substrate support and covering the top of the process chamber; And
A gas injector connected to the chamber lid and having a plurality of gas injector modules for injecting gas onto the substrate,
In this case, the gas injection module includes a ground electrode frame forming a plasma reaction space and a power electrode formed in the ground electrode frame to cause plasma discharge together with the ground electrode frame,
And a plasma discharge amount at an edge portion of the substrate support portion more than a plasma discharge amount at a center portion of the substrate support portion. 10. The method according to any one of claims 1 to 9,
The gas injection module includes a first gas injection space for injecting a first gas provided to be separated from each other spatially and a second gas injection space for injecting a second gas. The method of claim 10,
The gas injection module includes a ground partition member for separating the first gas injection space and the second gas injection space,
And the height of the second side of the edge portion of the substrate support portion is greater than that of the first side of the ground portion of the substrate support portion. The method of claim 10,
The power supply electrode is formed in both the first gas injection space and the second gas injection space. The method of claim 10,
And a gas hole pattern member for preventing the first gas injected from the first gas injection space from flowing into the second gas injection space. 10. The method according to any one of claims 1 to 9,
And the power supply electrode extends in a direction perpendicular to the substrate surface. 10. The method according to any one of claims 1 to 9,
And a gas injected from any one of the plurality of gas injection modules and a gas injected from the other gas injection module are different from each other. 10. The method according to any one of claims 1 to 9,
At least one gas injection module of the plurality of gas injection module is a substrate processing apparatus, characterized in that provided with one gas injection space.

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