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KR20130119615A - Method for sawing semiconductor material - Google Patents

Method for sawing semiconductor material Download PDF

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Publication number
KR20130119615A
KR20130119615A KR1020120042548A KR20120042548A KR20130119615A KR 20130119615 A KR20130119615 A KR 20130119615A KR 1020120042548 A KR1020120042548 A KR 1020120042548A KR 20120042548 A KR20120042548 A KR 20120042548A KR 20130119615 A KR20130119615 A KR 20130119615A
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KR
South Korea
Prior art keywords
cutting
unit
line
semiconductor material
edge
Prior art date
Application number
KR1020120042548A
Other languages
Korean (ko)
Inventor
방효영
Original Assignee
한미반도체 주식회사
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Priority to KR1020120042548A priority Critical patent/KR20130119615A/en
Publication of KR20130119615A publication Critical patent/KR20130119615A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

The present invention relates to a method for cutting semiconductor materials and, more specifically, to a method for cutting semiconductor materials to reduce a failure rate of semiconductor materials and improve the productivity of the semiconductor materials. The present invention is a method for cutting semiconductor materials which cuts semiconductor materials including a single material part in which multiple units are arranged in a matrix and a scrap part disposed around the single material part into a unit by using a semiconductor material cutting device.

Description

Cutting method of semiconductor materials {METHOD FOR SAWING SEMICONDUCTOR MATERIAL}

The present invention relates to a method for cutting a semiconductor material, and more particularly, to a method for cutting a semiconductor material to reduce the defect rate of the semiconductor material and to improve the productivity of the semiconductor material.

In the semiconductor manufacturing process, a cutting process is a process of separating a semiconductor material having a predetermined semiconductor manufacturing process into individual unit units (for example, individual semiconductor chips or semiconductor packages).

The cutting process of the semiconductor material generally includes a process of cutting a cutting line in one direction for dividing the unit units and a cutting line in another direction perpendicular to the cutting line in one direction.

In general, the suction holding force of the chuck table acting on the unit units arranged on the outermost line by performing the first cutting process on the unit units arranged on the outermost line in the cutting process on the other scheduled cutting line. There has been a problem that the weak unit units arranged on the outermost line are separated from the chuck table or at the exact position of each unit unit in the chuck table. In particular, the semiconductor material is a semiconductor strip and the unit unit is 1.3, for example. In the case of a small semiconductor package such as mm * 1.3 mm, the above-mentioned problems occur more frequently. As a result, when the cutting unit is transferred to the picker at the same time, there are adsorption parts that do not hold the unit unit among the adsorption parts of the picker due to the separated unit unit, and as a result, a plurality of adsorption in one vacuum chamber Due to the structural characteristics of the picker that delivers the vacuum suction input to the negative and the empty adsorption portions, there has been a problem in that the vacuum suction input loss occurs so that the cut unit units cannot be stably gripped. In this case, the industry generally treats not only detached unit units but also unit units that are located in the correct position without being separated, so that a defect rate of semiconductor materials has been increased.

In addition, a semiconductor material generally includes a material portion in which a plurality of unit units are arranged and a scrap portion to be removed later as an edge of the material portion.

According to the cutting process of a semiconductor material according to the prior art, after the cutting process of the semiconductor material is completed, before transferring the completed unit unit to the material loading section, the pieces of the unit unit and the scrap portion cut to a similar size to each other by sorting As a separate sorting process for discarding the pieces is required, a problem has been raised that impedes the manufacturing speed and productivity of the semiconductor material as a whole.

Accordingly, it is an object of the present invention to provide a method for cutting semiconductor materials that solves the problems of the prior art.

Specifically, it is an object of the present invention to provide a method of cutting a semiconductor material to reduce the defective rate of the semiconductor material.

In addition, another object of the present invention is to provide a method for cutting a semiconductor material to improve the manufacturing speed of the semiconductor material.

According to an aspect of the present invention for achieving the above object, the present invention, semiconductor material cutting a semiconductor material comprising a single material portion is arranged in a matrix and a scrap portion located around the single material portion A cutting method of semiconductor material for cutting into unit units using an apparatus, comprising: adsorbing the semiconductor material on a chuck table; A scrap part removing step of removing the scrap part from the semiconductor material with the semiconductor material cutting device; A first cutting step of cutting a plurality of first direction unit unit cutting schedule lines with the semiconductor material cutting device; A rotating step of rotating the chuck table by 90 °; And a second cutting step of cutting a plurality of second direction unit unit cutting schedule lines perpendicular to the first direction unit unit cutting schedule line with the semiconductor material cutting device. A second direction unit unit cutting schedule line second adjacent from the edge of the material portion among two second direction unit unit cutting schedule lines, and then cutting the second direction unit unit cutting schedule line first adjacent from the edge of the material portion It provides a method for cutting a semiconductor material, characterized in that.

According to another aspect of the present invention, the present invention provides a semiconductor material unit comprising a semiconductor material including a plurality of material parts in which a plurality of unit units are arranged in a matrix, and a scrap part located around each of the material parts. A cutting method of a semiconductor material to be cut into a unit, comprising: adsorbing the semiconductor material on a chuck table; A scrap part removing step of removing the scrap part from the semiconductor material with the semiconductor material cutting device; A first cutting step of cutting a plurality of first direction unit unit cutting schedule lines with the semiconductor material cutting device; a rotating step of rotating the chuck table by 90 °; And a second cutting step of cutting a plurality of second direction unit unit cutting schedule lines perpendicular to the first direction unit unit cutting schedule line with the semiconductor material cutting device, wherein the second cutting step includes: A second direction unit unit cutting schedule line second adjacent from the edge of the material portion of the second direction unit unit cutting schedule line is to be cut and then the second direction unit unit cutting schedule line first adjacent from the edge of the material portion. It provides a method for cutting a semiconductor material, characterized in that.

Preferably, the second cutting step is to first cut the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, and then to cut the second direction unit unit first adjacent from the edge of the material portion. It is characterized by cutting the line.

Preferably, in the second cutting step, the second direction unit cutting second line adjacent to the second direction unit unit cutting line is first cut off from the edge of the material portion, and the second direction unit third adjacent to the edge of the material portion. After cutting the second direction unit unit cutting schedule line in the inside of the material portion from the unit cutting schedule line, the second direction unit unit cutting schedule line adjacent to the first direction from the edge of the material portion is cut.

Preferably, the second cutting step may be performed by first cutting the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, and cutting the second direction unit unit cutting schedule line inside the material portion. After cutting in sequence, and lastly to cut the first line in the second direction unit cutting unit adjacent to the edge of the material portion.

Preferably, in the second cutting step, before cutting the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, the second cutting step is third from the edge of the unit unit cutting schedule line inside the material portion. Characterized by sequentially cutting to the adjacent unit unit cutting schedule line.

Preferably, the first cutting step may include a first directional unit of the material unit starting from a first directional unit unit cutting scheduled line that is first adjacent to the edge of the material unit among the plurality of first directional unit unit cutting schedule lines. Characterized by sequentially cutting along the unit cutting schedule line.

Preferably, the first cutting step includes cutting the first direction unit unit cutting schedule line second adjacent from the edges of the material portion among the plurality of first direction unit unit cutting schedule lines and then cutting the edge of the material portion. It is characterized in that for cutting the first adjacent unit direction cutting unit line from the first direction.

Preferably, the first cutting step may include: first cutting the first direction unit unit cutting schedule line second adjacent from the edge of the material portion among the plurality of first direction unit unit cutting schedule lines; It is characterized in that for cutting the line to be cut in the first direction unit unit first adjacent from the edge of the.

Preferably, in the first cutting step, the first unit unit cutting schedule line second adjacent from the edge of the material portion is first cut and the third unit adjacent to the edge of the material portion is scheduled to be cut. And cutting the unit unit cutting schedule line inside the material portion from the line, and then cutting the first direction unit unit cutting schedule line adjacent to the first direction from the edge of the material portion.

In addition, the semiconductor material cutting device is characterized in that the material cutting portion including two blades spaced apart from each other at a predetermined interval.

In addition, preferably, the predetermined interval may be changed.

Preferably, the edge cutting line, the first direction unit cutting unit line and the second direction unit cutting unit line are half-etched in advance along the cutting line.

Preferably, the first cutting step and the second cutting step may be cut along the unit unit cutting schedule line while moving relative to the transfer direction of the chuck table and the material cutting unit to cut into unit units. do.

According to the above-mentioned problem solving means, the present invention is a second cutting step of the plurality of unit unit cutting line to cut the second unit unit line cutting line adjacent to the edge cutting line of the material unit after the unit unit closest to the edge cutting line By cutting the line to be cut, the cut unit groups can receive a sufficient vacuum suction input from the suction hole of the chuck table so that the unit units located in the outermost line of the material section are located in the outermost line of the chuck table. It is possible to prevent the departure of the units in place. As a result, all of the unit units of which the cutting process is completed in the material part can be stably gripped by the picker, thereby significantly reducing the defective rate of the unit unit and / or the semiconductor material.

In addition, since the present invention cuts the scrap portion from the semiconductor material in advance, and then cuts the material portion into the unit unit, the cutting path of the blade in the semiconductor material can be significantly reduced, thereby increasing the cutting speed of the semiconductor material. After completion of the cutting process does not require a separate sorting process for classifying the unit unit from the scrap pieces, it is possible to significantly improve the manufacturing speed of the semiconductor material.

1 is a schematic perspective view of a semiconductor material related to the present invention.
2 is a schematic plan view of a semiconductor material cutting device according to an embodiment of the present invention.
3 is a schematic block diagram of a semiconductor material cutting device according to an embodiment of the present invention.
4 is a schematic flowchart of a method of cutting a semiconductor material according to an embodiment of the present invention.
5A and 5B are schematic plan views of a scrap part removing step of a method of cutting a semiconductor material according to an embodiment of the present invention.
6 is a schematic plan view of a material misalignment step in a method of cutting semiconductor materials according to an embodiment of the present invention.
7A to 7C are schematic plan views of a first cutting step of a cutting method of a semiconductor material according to an embodiment of the present invention.
8A to 8C are schematic plan views of a second cutting step of a cutting method of a semiconductor material according to an embodiment of the present invention.
9A to 9C are schematic plan views of a first cutting step of a cutting method of a semiconductor material according to another embodiment of the present invention.
10A to 10C are schematic plan views of a second cutting step of a cutting method of a semiconductor material according to another embodiment of the present invention.
11 is a schematic diagram of a further embodiment of a semiconductor material cut by the semiconductor material cutting device according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.

As shown in FIG. 1, the semiconductor material L (to be cut) related to the present invention is a semiconductor strip, and from the viewpoint of a plan view, a plurality of material parts (in which a unit unit U, which is a semiconductor element, is arranged in a plurality of matrices ( M1, M2, M3 and the scrap part S located around each material part M1, M2, M3 (namely, an edge). Each material part M1 (M2) M3 and scrap part S are divided by a plurality of edge cutting lines, and the unit units U in each material part M1, M2, M3 are plural from each other. It is divided by two unit unit cutting schedule line (C).

The edge cutting line and the unit unit cutting schedule line C are cutting paths or movement paths of the material cutting part 150. The edge cutting line includes a first direction cutting line (P1) and a second direction cutting line (P2) perpendicular to the first direction cutting line (P1), and the unit unit cutting schedule line (C) Includes a first direction unit cutting schedule line C1 and a second direction unit cutting schedule line C2 perpendicular to the first direction unit cutting schedule line C1.

In addition, as shown in FIGS. 1 and 5A, the first directional cutting line P1 and the first directional unit cutting schedule line C1 are perpendicular to the long direction of the semiconductor material L. FIG. (Ie, a unidirectional direction), and the second directional cutting line P2 and the second directional unit cutting schedule line C2 are formed in a direction parallel to the long direction of the semiconductor material L. It is a cutting line.

However, the present invention is not limited thereto, and the first direction may be a long direction of the semiconductor material L, and the second direction may be a unidirectional direction of the semiconductor material L.

The semiconductor material (L) is laminated on one surface of the material layer (t1) and the material layer (t1) where the semiconductor material (L) is located in the thickness direction to protect one surface of the material layer (t1) ( t2).

The material parts M1, M2, and M3 are composed of a material layer t1 and a molding layer t2 including the unit unit U in the thickness direction, and the scrap part S has no unit unit U. It consists of the material layer t1 or the material layer t1, and the molding layer t2.

Preferably, the boundary line between the plurality of unit units U (ie, the first direction unit cutting unit line C1 and the second direction unit cutting unit line C2) in the material units M1, M2, and M3. And the boundary line (that is, the edge cutting line) between the material portions M1, M2 and M3 and the scrap portion S may be half-etched in advance in accordance with the cutting line shape or the cutting line. For this reason, the cutting speed of the semiconductor material L can be improved.

The semiconductor material L includes a plurality of material parts M1, M2, and M3. For example, as illustrated in FIG. 1, the semiconductor material L includes a first material part M1 and a second material part M2. And a third material part M3. Since the 1st material part M1, the 2nd material part M2, and the 3rd material part M3 are material parts of the same specification and shape, a cutting process is substantially the same. Therefore, hereinafter, the method of cutting the semiconductor material S200 according to the present invention will be described with reference to the first material part M1 for clarity.

2 is a schematic plan view of a semiconductor material cutting device 100 according to an embodiment of the present invention, Figure 3 is a schematic block diagram of a semiconductor material cutting device 100 according to an embodiment of the present invention. .

As shown in Figures 2 and 3, the cutting device for a semiconductor material (L) according to an embodiment of the present invention, the input unit 110 for receiving an input signal of the user; A chuck table 140 on which the semiconductor material L transferred from the material supply unit 101 is seated; A material transfer device (130) for transferring the semiconductor material (L) from the material supply unit (101) to the chuck table (140); A material cutting part 150 for cutting the plurality of material parts M1, M2, and M3 into a unit unit U from the semiconductor material L seated on the chuck table 140; The controller 120 controls the chuck table 140, the material transfer device 130, and the material cutting unit 150 based on the input signal of the input unit 110.

In addition, preferably, although not shown in the drawings may further include a photographing device for detecting the position information in the chuck table 140 for the plurality of material parts (M1, M2, M3) and / or the semiconductor material (L). have.

The chuck table 140 is provided with a moving rail between the material cutting unit 150 and the chuck table 140 to be moved to the material cutting unit 150, the chuck table 140 is clockwise and / or half And is rotatable clockwise.

The chuck table 140 includes a plurality of adsorption parts for fixing the semiconductor material L and / or the unit unit U in a vacuum suction method.

In addition, although not shown in the drawings, preferably, the chuck table 140 includes one of a guide pin and a guide groove for guiding the chuck table 140 and the material transfer device 130 (up and down) to align. The material transfer device 130 may include a guide groove or a guide pin coupled to the guide pin or the guide groove of the chuck table 140.

The material transfer device 130 grips and transfers the semiconductor material L and / or the material part M and / or the unit unit U, and the semiconductor material L and / or the plurality of material parts M1, M2, and M3. To the chuck table 140. The material transfer device 130 includes a picker, and includes a picker 131 that grips the entire semiconductor material L or the entire unit unit U.

The picker 131 grasps the semiconductor material L from the material supply part 101, transfers the material to the chuck table 140, and grips the plurality of unit units U having the cutting process to be transferred to the material loading part.

The material cutting part 150 includes two blades 151 and 153 and a blade feed table 155 to which the two blades 151 and 153 move.

The two blades 151 and 153 are spaced apart from each other at predetermined intervals, and simultaneously cut one material portion M1 on both sides of the material portion M1. For this reason, a cutting speed can be improved.

The predetermined interval between the two blades 151 and 153 may be changed, and each blade 151 and 153 may be individually controlled by the controller 120.

Hereinafter, the semiconductor material cutting method (S200) according to the present invention for cutting the semiconductor material (L) into a unit unit (U) using the semiconductor material cutting device 100 according to the present invention described above with reference to the drawings. This will be described in more detail.

4 is a schematic flowchart of a method of cutting a semiconductor material (S200) according to an embodiment of the present invention. 5A and 5B are schematic plan views of a scrap part removing step S220 of a cutting method S200 of a semiconductor material according to an embodiment of the present invention, and FIG. 6 is a scrap part according to an embodiment of the present invention. 7A to 7C are schematic plan views of the first cutting step S230 of the semiconductor material cutting method S200 according to an embodiment of the present invention, and FIGS. 8A to 7C are schematic plan views of the removed semiconductor material. 8C is a schematic plan view of the second cutting step 250 of the cutting method (S200) of the semiconductor material according to an embodiment of the present invention.

As shown in Figure 4, the cutting method (S200) of the semiconductor material, the material seating step (S210) for transferring the semiconductor material (L) from the material supply unit 101 and seated on the chuck table 140, The scrap part removing step S220 of removing the scrap part S from the semiconductor material L seated on the chuck table 140, and the plurality of material parts M1, in which the scrap part S is removed and divided from each other, First cutting step S230 of sequentially cutting the M2 and M3 along the first direction unit cutting line C1 by the material cutting part 150, and a rotation to rotate the chuck table 140 by 90 °. Step S240 and the second cutting step S250 of cutting the plurality of second direction unit unit cutting schedule lines C2 perpendicular to the first direction unit unit cutting schedule line C1 by the material cutting unit 150. ).

Here, the second cutting step 250 is the Nth (where N is a natural number of two or more) from the edge of the material portion (M1, M2, M3) of the plurality of second direction unit unit cutting schedule line (C2) It may be executed to cut the adjacent second direction unit unit cutting schedule line C2 for the first time.

After cutting the Nth adjacent unit unit cutting schedule line C2, the first adjacent two-way unit unit cutting schedule line is cut from the edge.

In more detail, the cutting sequence of the unit unit cutting schedule line may cut the Nth adjacent unit unit cutting schedule line C2 and immediately cut the first adjacent unit unit cutting schedule line from the edge. From the Nth, follow the inner unit cutting line of the material sequentially, and then cut the first adjacent unit cutting line from the edge, or from the Nth, follow the outer unit of the material cutting line. It may be cut sequentially to cut the first adjacent unit unit cutting line from the edge.

Preferably, N is a line for cutting the second unit unit. That is, if N is the second unit unit cutting line, the cutting sequence may be 2-> 3-> 4-> ...-> 1, and 2-> 1-> 3-> 4-> .. It can be .2-> 1-> ...-> 4-> 3.

For each of these, embodiments of the invention may be described as follows, but not limited thereto.

The present invention provides a cutting method of a semiconductor material for cutting a semiconductor material including a material portion in which a plurality of unit units are arranged in a matrix, and a scrap portion positioned around the material portion, using a semiconductor material cutting device. A material seating step of transferring the material from the material supply unit and seating the material on the chuck table; A scrap part removing step of removing the scrap part from the semiconductor material with the semiconductor material cutting device; A first cutting step of cutting a plurality of first direction unit unit cutting schedule lines with the semiconductor material cutting device; A rotating step of rotating the chuck table by 90 °; And a second cutting step of cutting the plurality of second direction unit unit cutting schedule lines perpendicular to the first direction unit unit cutting schedule line by the material cutting unit. The second cutting step includes: A second direction unit unit cutting schedule line, which is second adjacent from the edge of the material portion, is to be cut from the edge of the material section, and a second adjacent unit direction cutting unit line is cut from the edge of the material portion, which is to be cut from the edge of the material portion. The present invention provides a method for cutting a semiconductor material, characterized in that for cutting a first line adjacent to the second direction unit unit cutting line.

The material part may be a single material part or a plurality of material parts in which a plurality of unit units are arranged in a matrix.

In the second cutting step according to the present invention, the material cutting step according to the first embodiment is to cut the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, the third adjacent from the edge of the material portion The second direction unit unit cutting schedule line may be cut and the first second direction unit unit cutting schedule line nearest to the edge may be cut.

More specifically, it is possible to cut in the order of 2-> 3-> 1 from the edge of the material portion in the second direction unit cutting unit line. It is also possible to cut 2-> 3-> 1 lastly after cutting another second direction unit unit scheduled cut line, and to cut in the order of 2-> 3-> 1, and then to cut the remaining second direction unit unit cut line Cutting sequentially.

That is, it can be cut from the inside of the material part in the order ...-> 6-> 5-> 4-> 2-> 3-> 1, or 4-> 5-> 6-> ...-> 2- > 3-> 1 in order to cut, 2-> 3-> 1-> 4-> 5-> 6 in order, 2-> 3-> 1-> inside-> .. You can also cut in the order .-> 6-> 5-> 4.

In the material cutting step according to the first embodiment, if the order of 2-> 3-> 1 is kept, the order of cutting the other second direction unit cutting unit lines does not matter.

In the second cutting step according to the second embodiment of the present invention, the material cutting step is to cut the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, the third adjacent third from the edge of the material portion The second direction unit unit cutting schedule line located in the inside of the material section is sequentially cut from the two-way unit unit cutting schedule line, and lastly, the first second direction unit unit cutting schedule line adjacent to the edge of the material section is cut. Can be.

More specifically, it is possible to cut in the order of 2-> 3-> 4-> 5-> 6-> ...-> 1 from the edge of the material portion in the second direction unit cutting unit line. Of course, in addition to 2-> 3-> ...-> 6-> 5-> 4-> 1 can be cut.

In the second cutting step according to the third embodiment of the present invention, the second direction unit unit cutting schedule line located inside of the plurality of second direction unit unit cutting schedule lines is sequentially cut and sequentially toward the edge of the material portion. It is characterized by cutting. That is, cutting in the order of ...-> 6-> 5-> 4-> 3-> 2-> 1 from the inside of the material portion to the edge direction is also included in the embodiment of the present invention.

While the foregoing has described possible embodiments for the second cutting step, this is equally applicable to the first cutting step.

In the first cutting step, the first direction unit unit cutting schedule line is secondly adjacent from the edge of the material portion among the plurality of first direction unit unit cutting schedule lines, and the first direction is first adjacent from the edge of the material portion. It is to cut the line to cut the unit (2-> 1).

Further, the first cutting step is to cut the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, and then sequentially from the first direction unit unit cutting schedule line third adjacent from the edge of the material portion It is to cut the first direction unit unit cutting schedule line located inside of and finally cut the first direction unit unit cutting schedule line adjacent to the edge of the material part (2-> 3-> 4-> 5-). > ...-> 1). In addition, you can cut in the order ...-> 6-> 5-> 4-> 2-> 3-> 1, or 4-> 5-> 6-> ...-> 2-> 3-> 1 You can cut in the order of 2-> 3-> 1-> 4-> 5-> 6, or 2-> 3-> 1-> inside-> ...-> 6-> You can also cut in the order of 5-> 4.

In the second cutting step, which is finally unitized, the material located at the edge portion is caused by a problem that the vacuum suction input is weak or is separated by the force applied during cutting, so the cutting order of the first cutting step is not a big problem. . Therefore, in the first cutting step, the first direction unit unit cutting schedule line adjacent to the first direction unit unit cutting schedule line first adjacent to the edge of the material portion among the plurality of first direction unit unit cutting schedule lines. It also includes cutting sequentially.

In addition, the first cutting step and the second cutting step according to the present invention are cut along the unit unit cutting schedule line while moving relative to the feed direction of the chuck table and the material cutting part and cut into the unit.

In addition, the scrap portion removing step is to remove the scrap portion (border cutting line) while moving relative to the feed direction of the chuck table and the material cutting portion. When removing the scrap part, it may be removed by spraying it from a washing nozzle such as water or air, or may be removed from the chuck table by the rotational force of the blade of the material cutting part.

In the following, each step will be described in more detail.

First, the control unit 120 controls the material transfer device 130 to seat the semiconductor material L loaded in the material supply unit 101 on the chuck table 140 (S210).

Subsequently, the controller 120 controls the vacuum pump provided in the chuck table 140 to apply a vacuum suction input to the suction part of the chuck table 140 so that the semiconductor material L is applied to the upper surface of the chuck table 140. Fix it.

Thereafter, as shown in FIGS. 5A and 5B, the control unit 120 cuts the edge cutting line of the semiconductor material L with the material cutting part 150 so that the scrap part S in the semiconductor material L is cut. The material cutting unit 150 is controlled to be removed (S220).

Specifically, as shown in FIGS. 5A and 5B, the step of removing the scrap part (S220) is a material cutting part 150 with a second directional cutting line parallel to the second direction unit cutting part line C2. A first preliminary cutting step of cutting P2), a preliminary rotating step of rotating the chuck table 140 at 90 °, and parallel to the first direction unit cutting schedule line C1 by the material cutting part 150; And a second preliminary cutting step of cutting one first direction cutting line P1.

That is, as shown in FIG. 5A, the control unit 120 may continuously cut the second edge cutting lines P2 of the plurality of material parts M1, M2, and M3 into two blades 151 and 153. The material cutting unit 150 is controlled, and then the chuck table 140 is rotated counterclockwise. Thereafter, the control unit 120 controls the material cutting unit 150 so that the first direction edge cutting lines P1 of the plurality of material units M1, M2, and M3 may be cut into the two blades 151 and 153. At this time, the second preliminary cutting step, as shown in FIG. 5B, the two blades 151 and 153 cut the first direction edges at both edges of the semiconductor material L or are shown in the drawing. Although it is not possible, it may be executed to sequentially cut the first direction edges of the respective material parts M1, M2, and M3. The cutting step may cut the rim line while moving relative to the feed direction of the chuck table and the blade.

Thus, according to the present invention, since the scrap portion S is previously cut and removed from the semiconductor material L, the material portions M1, M2, and M3 are cut into the unit unit U, so that the blades 151, The cutting path of 153 can be considerably reduced, which not only increases the cutting speed of the semiconductor material L, but also separates the unit unit U from the pieces of the scrap part S after completion of the cutting process. This does not require the step of classifying, and therefore the manufacturing speed of the semiconductor material (L) can be significantly improved.

Thereafter, the controller 120 cuts the plurality of first direction unit unit cutting schedule lines C1 by controlling the material cutting unit 150. When cutting, cut the unit unit cutting schedule line while moving relative to the feed direction of chuck table and blade.

Specifically, as shown in FIG. 7A, the controller 120 first divides the material parts M1, M2 and M3 and the scrap part S from the plurality of first directional unit cutting lines C1. The material cutting part 150 is controlled such that the first direction unit unit cutting schedule lines C1-1 and C1-8 adjacent to each other from the edge cutting line (that is, the first direction cutting line P1) are first cut. . After that, when the cutting process of the first direction unit cutting unit line C1 is completed, the controller 120 is second from the edge cutting line (ie, the first direction edge cutting line P1) as shown in FIG. 7B. The material cutting part 150 is controlled to cut the first direction unit unit cutting schedule lines C1-2 and C1-7 adjacent to each other, and the controller 120 repeats such a process to cut the edge cutting line (that is, The material cutting part 150 is controlled to cut the third, fourth, ... n-th adjacent first direction unit cutting unit line C1 from the one-way edge cutting line P1) (the edge of the material portion). In this process, the controller 120 controls the material cutting unit 150 to cut all of the first direction unit cutting unit lines C1 as shown in FIG. 7C, thereby cutting the first cutting step S240. To complete.

However, the present invention is not limited thereto, and the control unit 120 includes the first direction unit unit cutting schedule lines C1-1 and C1 which are first adjacent to the edge cutting line (ie, the first direction edge cutting line P1). -8) may be performed to remove the first direction unit unit cutting schedule line C1 adjacent to the nth (where n is a natural number of 2 or more) from the edge cutting line.

Thereafter, the control unit 120 cuts the material cutting unit 150 such that the material cutting unit 150 cuts the plurality of second direction unit unit cutting schedule lines C2 perpendicular to the first direction unit unit cutting schedule line C1. To control. At this time, the control unit 120 is the N-th (where N is a natural number of two or more) from the edge cutting line (that is, the second direction edge cutting line P2) of the plurality of second direction unit cutting unit line (C2) The material cutting unit 150 is controlled such that the adjacent second direction unit cutting unit line C2 is cut for the first time.

Specifically, the second cutting step 260 includes a plurality of cutting processes for cutting a plurality of second direction unit unit cutting schedule lines C2, and the second cutting step 260 may include cutting the plurality of cutting processes. The second direction unit unit cutting schedule lines C2-1 and C2-8 adjacent to the first edge cutting line (ie, the second direction edge cutting line P2) (that is, the outermost unit unit cutting schedule line C). The cutting process for cutting)) is performed after the second cutting operation.

For example, as illustrated in FIGS. 8A to 8C, the control unit 120 controls the material cutting unit 150 to secondly cut the second direction unit unit cutting lines C2-2 and C2 from the edge cutting line. -7) after cutting for the first time (i.e., the first cutting process), cut the second direction unit unit cutting schedule lines (C2-1, C2-8) first adjacent to the edge cutting line (i.e., the second cutting process). Cutting process). Thereafter, the controller 120 controls the material cutting unit 150 to cut the third, fourth, ..., n-th adjacent second direction unit cutting unit line C2 from the edge cutting line. The control unit 120 repeats this process to cut the second direction unit unit cutting schedule line C2 and cuts all of the second direction unit unit cutting schedule line C2 as shown in FIG. 2 complete the cutting step (260).

As a modified embodiment, the control unit 120 controls the material cutting unit 150 to be the second direction unit unit cutting schedule line C2- adjacent to the third cutting line (that is, the second direction cutting line P2). 3, C2-6) after cutting for the first time, the first and second adjacent unit direction cutting line C2 (or the second and first adjacent direction unit cutting line) from the edge cutting line (C2)) The second cutting step 260 may be executed to be sequentially removed.

However, the present invention is not limited to the above-described second cutting step 260, and when the second cutting step 260 is executed, the second direction unit unit cutting schedule line C2-1, which is first adjacent to the edge cutting line. It will be appreciated that C2-8) is included in the scope of the present invention unless it is first cleaved.

Preferably, in the first cutting step (S240) and the second cutting step (260), in the material misalignment step (S230), the cutting step of cutting the unit unit cutting schedule line (C) aligned to be aligned with each other in a straight line In addition, the plurality of material parts M1, M2, and M3 may be continuously cut. For this reason, the cutting speed of the unit unit U of a material part can be improved.

As described above, according to the present invention, the second cutting step 260 is not the unit unit cutting schedule line (C) which is closest to the edge cutting line of the material unit among the plurality of unit unit cutting schedule lines (C). By cutting the predetermined line (C) first, the cut unit groups (U) can receive a sufficient vacuum suction input from the suction hole of the chuck table 140, which is located on the outermost line of the material portion (M). Unit units (U) can be prevented from being separated from the correct position of the unit units (U) located in the outermost line in the chuck table 140. As a result, since the material unit M can stably hold all of the unit units U having the cutting process completed with a picker, the defective rate of the unit unit U and / or the semiconductor material L can be significantly reduced.

9A to 9C are schematic plan views of a first cutting step S240 of a cutting method S200 of a semiconductor material according to another embodiment of the present invention, and FIGS. 10A to 10C illustrate another embodiment of the present invention. A schematic plan view of the second cutting step 260 of the cutting method (S200) of the semiconductor material according to the example.

As shown in FIGS. 9A to 9C, in the method of cutting semiconductor material S200 according to another embodiment of the present invention, the semiconductor material L is transferred from the material supply part 101 to the chuck table 140. A material seating step (S210) for seating, a scrap part removing step (S220) for removing a scrap part (S) from the semiconductor material (L) seated on the chuck table 140, and the scrap part (S) is removed And a plurality of material units M1, M2, and M3, which are divided from each other, on the chuck table 140, and a material misalignment step S230, and the material cutting unit 150 to cut a plurality of first direction unit units. A first cutting step S240 for cutting C1), a rotating step S250 for rotating the chuck table 140 at 90 °, and a predetermined cutting line for the first direction unit unit cutting material 150. And a second cutting step 260 for cutting the plurality of second direction unit cutting lines C2 perpendicular to C1).

Here, the first cutting step (S240), from the edge cutting line for dividing the material portion (M1, M2, M3) and the scrap portion (S) of the plurality of first direction unit unit cutting schedule line (C1). The first cutting direction unit unit cutting schedule line C1 adjacent to the M-th (where M is a natural number of 2 or more) is first cut, and the second cutting step 260 is the plurality of second direction unit cutting schedule lines. A second line unit cutting schedule line C2 adjacent to the Nth (where N is a natural number of 2 or more) from the edge cutting line dividing the material portions M1, M2, M3 and the scrap portion S from among C2. May be executed to cut first.

That is, the cutting method (S200) of the semiconductor material according to another embodiment of the present invention is the same as or similar to the cutting method (S200) of the semiconductor material according to the above-described embodiment of the present invention except for the first cutting step (S240). Therefore, in order to avoid duplication of description, the description overlapping with the method of cutting the semiconductor material (S200) according to an embodiment of the present invention will be omitted as much as possible.

Looking at the first cutting step (S240) according to this embodiment, the control unit 120 cuts the material cutting unit 150 so that the material cutting unit 150 cuts a plurality of first direction unit unit cutting schedule line (C1). To control. At this time, the control unit 120 from the edge cutting line (that is, the first direction edge cutting line P1) of the plurality of first direction unit cutting unit line (C1) to the Mth (where M is a natural number of 2 or more) The material cutting unit 150 is controlled such that the adjacent first direction unit cutting unit line C1 is cut for the first time.

Specifically, the first cutting step (S240) includes a plurality of cutting process for cutting a plurality of first direction unit unit cutting schedule line (C1), the first cutting step (S240) of the plurality of cutting process The first direction unit unit cutting schedule lines C1-1 and C1-8 adjacent to the edge cutting line (ie, the first direction edge cutting line P1) (that is, the outermost unit unit cutting schedule line C). The cutting process for cutting)) is performed after the second cutting operation.

For example, as shown in FIGS. 9A to 9C, the control unit 120 controls the material cutting unit 150 to make the second direction unit unit cutting schedule lines C1-2 and C1 adjacent to the second cutting line. -7) after cutting for the first time (i.e., the first cutting process), the first direction unit unit cutting schedule lines C1-1 and C1-8 adjacent to the edge cutting line are cut (i.e., the second cutting process). Cutting process). Subsequently, the controller 120 controls the material cutting unit 150 to cut the third, fourth, ..., n-th adjacent unit direction cutting line C1 from the edge cutting line. The control unit 120 repeats this process to cut the first direction unit unit cutting schedule line C1 and cuts all the first direction unit unit cutting schedule line C1 as shown in FIG. 1 complete the cutting step (S240).

As a modified embodiment, the control unit 120 controls the material cutting unit 150 so as to be the third direction unit unit cutting schedule line C1-3 adjacent to the edge cutting line (that is, the first direction cutting line P1). 3, C1-6) after cutting for the first time, the first and second adjacent unit direction cutting line C1 (or the second and first adjacent unit direction cutting line) from the edge cutting line (C1)) The first cutting step S240 may be executed to be sequentially removed.

However, the present invention is not limited to the first cutting step S240 described above, and the first direction unit unit cutting schedule lines C1-1, which are first adjacent to the edge cutting line when the first cutting step S240 is executed. It can be seen that C1-8) is included in the scope of the present invention unless it is initially cleaved.

As shown in FIGS. 10A to 10C, the second cutting step 260 according to the present exemplary embodiment is the same as the second cutting step 260 of the cutting method S200 of the semiconductor material according to the exemplary embodiment described above. Description thereof will be omitted.

11 is a schematic diagram of a further embodiment of the semiconductor material L cut by the semiconductor material cutting device 100 according to the present invention.

As shown in FIG. 11, the semiconductor material L (to be cut) according to a further embodiment is a semiconductor strip, and in view of a plan view, a single material part having unit units U, which are semiconductor elements, arranged in a plurality of matrices ( M) and the scrap portion (S) located around the single material portion (M). The single material part M and the scrap part S are divided by a plurality of edge cutting lines, and the unit units U in the single material part M are divided by a plurality of unit unit cutting schedule lines C. .

The edge cutting line and the unit unit cutting schedule line C are cutting paths or movement paths of the material cutting part 150. The edge cutting line includes a first direction cutting line (P1) and a second direction cutting line (P2) perpendicular to the first direction cutting line (P1), and the unit unit cutting schedule line (C) Includes a first direction unit cutting schedule line C1 and a second direction unit cutting schedule line C2 perpendicular to the first direction unit cutting schedule line C1, and the first direction cutting line cut line P1 is parallel to the first direction unit cutting unit line C1, and the second direction edge cutting line P2 is parallel to the second direction unit unit cutting schedule line C2.

For example, as shown in FIG. 1, the first directional cutting line P1 and the first directional unit cutting schedule line C1 are perpendicular to the long direction of the semiconductor material L. That is, a cutting line formed in one direction), and the second cutting edge line P2 and the second direction unit cutting line C2 are formed in a direction parallel to the long direction of the semiconductor material L. It is good.

However, the present invention is not limited thereto, and the first direction may be a long direction of the semiconductor material L, and the second direction may be a unidirectional direction of the semiconductor material L.

The semiconductor material (L) is laminated on one surface of the material layer (t1) and the material layer (t1) where the semiconductor material (L) is located in the thickness direction to protect one surface of the material layer (t1) ( t2).

The material part M is composed of a material layer t1 and a molding layer t2 including the unit unit U in the thickness direction, and the scrap part S is a material layer t1 in which the unit unit U does not exist. ) And the molding layer t2.

Preferably, the boundary between the plurality of unit units U in the material unit M (ie, the first direction unit unit cutting schedule line C1 and the second direction unit unit cutting schedule line C2) and the material unit M ) And the boundary line between the scrap portion S (that is, the edge cutting line) may be half-etched in advance according to the cutting line shape or the cutting line. For this reason, the cutting speed of the semiconductor material L can be improved.

Cutting method of the semiconductor material (S200) for cutting the semiconductor material (L) according to the further embodiment, the material seating step of transferring the semiconductor material (L) from the material supply unit 101 and seated on the chuck table 140 ( S210, a scrap part removing step S220 of removing the scrap part S from the semiconductor material L seated on the chuck table 140, and a plurality of scrap parts S removed and separated from each other. A material cutting step S230 of aligning a material part M on the chuck table 140 and a first cutting step of cutting a plurality of first direction unit unit cutting schedule lines C1 using the material cutting part 150 ( S240, a rotation step S250 of rotating the chuck table 140 at 90 °, and a plurality of second directions perpendicular to the first direction unit unit cutting schedule line C1 by the material cutting part 150. And a second cutting step 260 of cutting the unit unit cutting schedule line C2.

Here, the second cutting step 260 is the Nth (where N is the edge cutting line dividing the material portion (M) and the scrap portion (S) of the plurality of second direction unit cutting unit lines C2) Is a natural number of 2 or more).

Preferably, the first cutting step (S240) also, similar to the second cutting step 260, the material portion (M) and the scrap portion (S) of the plurality of first direction unit unit cutting schedule line (C1) The first direction unit unit cutting schedule line C1 adjacent to the M-th (where M is a natural number of 2 or more) from the edge cutting line for dividing) may be executed for the first time.

In the cutting method (S200) of the semiconductor material for cutting the semiconductor material (L) according to an embodiment of the present invention, the cutting method is a process of cutting a single material portion (M), not a plurality of material portions (M) It does not require an alignment step (S230).

That is, except that the material misalignment step (S230) included in the cutting method (S200) of the semiconductor material according to the above-described embodiment and another embodiment is not included, the above-described embodiment and the other embodiment are carried out. The same or similar to the cutting method (S200) of the semiconductor material according to the example. Therefore, in order to avoid duplication of description, a description overlapping with the method of cutting the semiconductor material (S200) according to an embodiment of the present invention or another embodiment will be omitted.

While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. . It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

100: semiconductor material cutting device
101: material supply department
110: input unit
120:
130: material feeder
131: first picker
135: Picker Feeder
140: chuck table
150: material cutting part
151: first blade
153: second blade
155 blade feeder
L: Semiconductor Materials
M, M1, M2, M3: Material Department
S: scrap
U: unit
P1: Border cutting line in first direction
P2: edge cutting line in the second direction

Claims (14)

A semiconductor material cutting method of cutting a semiconductor material including a single material portion in which a plurality of unit units are arranged in a matrix, and a scrap portion located around the single material portion, using a semiconductor material cutting device.
Adsorbing the semiconductor material on a chuck table;
A scrap part removing step of removing the scrap part from the semiconductor material with the semiconductor material cutting device;
A first cutting step of cutting a plurality of first direction unit unit cutting schedule lines with the semiconductor material cutting device;
A rotating step of rotating the chuck table by 90 °; And
And a second cutting step of cutting a plurality of second direction unit unit cutting plan lines perpendicular to the first direction unit unit cutting plan line with the semiconductor material cutting device.
The second cutting step may include cutting the second direction unit unit cutting schedule line that is second from the edges of the material portion among the plurality of second direction unit unit cutting schedule lines and then making the first adjacent first edges from the edge of the material portion. A method for cutting semiconductor materials, characterized by cutting lines to be cut in two-way unit units. A semiconductor material cutting method for cutting a semiconductor material including a plurality of material parts in which a plurality of unit units are arranged in a matrix, and a scrap part located around each of the material parts, using a semiconductor material cutting device.
Adsorbing the semiconductor material on a chuck table;
A scrap part removing step of removing the scrap part from the semiconductor material with the semiconductor material cutting device;
A first cutting step of cutting a plurality of first direction unit unit cutting schedule lines with the semiconductor material cutting device;
A rotating step of rotating the chuck table by 90 °;
And a second cutting step of cutting a plurality of second direction unit unit cutting plan lines perpendicular to the first direction unit unit cutting plan line with the semiconductor material cutting device.
The second cutting step may include cutting a second direction unit unit cutting schedule line that is second from the edges of the material portion among the plurality of second direction unit unit cutting schedule lines, and then second first adjoining the edges of the material portion. A method for cutting semiconductor materials, characterized by cutting lines to be cut in a direction unit unit. 3. The method according to claim 1 or 2,
The second cutting step is to first cut the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, and then cut the first direction unit cutting schedule line adjacent to the first direction from the edge of the material portion. A method of cutting a semiconductor material, characterized in that. The method of claim 3,
The second cutting step may be performed by first cutting the second direction unit unit cutting schedule line second adjacent from the edge of the material portion, and starting from the second direction unit unit cutting schedule line third adjacent to the edge of the material portion. A method of cutting a semiconductor material, characterized in that for cutting the second direction unit unit cutting schedule line therein, and then cutting the first line of the second direction unit unit cutting schedule line adjacent to the edge of the material portion. The method of claim 3,
In the second cutting step, the second direction unit unit cutting schedule line secondly adjacent from the edge of the material portion is first cut, and the second direction unit unit cutting schedule line inside the material portion is sequentially cut. And finally, cutting the line to be cut in the second direction unit unit adjacent to the first edge of the material portion. 3. The method according to claim 1 or 2,
In the second cutting step, before cutting the second direction unit unit cutting schedule line that is second adjacent from the edge of the material portion, the third unit adjacent unit cutting schedule line that is third from the edge from the unit unit cutting schedule line inside the material portion. Method for cutting a semiconductor material, characterized in that the cutting to sequentially. 3. The method according to claim 1 or 2,
The first cutting step may include a first direction unit unit cutting schedule line adjacent to the first direction unit unit cutting schedule line first adjacent to the edge of the material portion among the plurality of first direction unit unit cutting schedule lines. Method for cutting semiconductor materials, characterized in that the cutting sequentially. 3. The method according to claim 1 or 2,
The first cutting step includes cutting the first direction unit unit cutting schedule line second adjacent from the edge of the material portion among the plurality of first direction unit unit cutting schedule lines, and then cutting the first direction unit adjacent to the edge of the material portion first. A method for cutting semiconductor materials, characterized by cutting lines to be cut in one-way unit units. 3. The method according to claim 1 or 2,
In the first cutting step, the first direction unit unit cutting schedule line second adjacent from the edge of the material portion is first cut out of the plurality of first direction unit unit cutting schedule lines, and then the first cutting edge is first from the edge of the material portion. A method of cutting a semiconductor material, characterized in that for cutting a line to be cut in an adjacent first direction unit unit. 3. The method according to claim 1 or 2,
In the first cutting step, the first direction unit unit cutting schedule line second adjacent from the edge of the material portion is cut first and the inside of the material portion starting from the third unit unit cutting schedule line adjacent to the edge of the material portion. And cutting the first unit direction cutting unit line adjacent to the first direction from the edge of the material portion after cutting the unit unit cutting schedule line. 3. The method according to claim 1 or 2,
The semiconductor material cutting device is a cutting method of a semiconductor material, characterized in that the material cutting portion including two blades spaced apart from each other at a predetermined interval. 12. The method of claim 11,
The cutting method of the semiconductor material, characterized in that the predetermined interval can be changed. 3. The method according to claim 1 or 2,
And the edge cutting line, the first direction unit cutting unit line and the second direction unit cutting unit line are half-etched in advance along the cutting line. 12. The method of claim 11,
In the first cutting step and the second cutting step, the semiconductor material is cut into unit units by cutting along the unit unit cutting schedule line while moving relative to the transfer direction of the chuck table and the material cutting unit. Way.
KR1020120042548A 2012-04-24 2012-04-24 Method for sawing semiconductor material KR20130119615A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9474145B2 (en) 2014-06-25 2016-10-18 Samsung Electronics Co., Ltd. Substrate and method for manufacturing semiconductor package
KR20200086892A (en) * 2019-01-10 2020-07-20 한미반도체 주식회사 Sawing and Handler Apparatus of Semiconductor Materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9474145B2 (en) 2014-06-25 2016-10-18 Samsung Electronics Co., Ltd. Substrate and method for manufacturing semiconductor package
KR20200086892A (en) * 2019-01-10 2020-07-20 한미반도체 주식회사 Sawing and Handler Apparatus of Semiconductor Materials

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