KR20130072752A - Light emitting device, method for fabricating the same, and light emitting device package - Google Patents

Abstract

PURPOSE: A light emitting device, and a method for manufacturing the light emitting device and a light emitting device package are provided to improve current spreading efficiency by forming insulating layers on a light emitting structure. CONSTITUTION: A light emitting structure (135) includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer. A first electrode is formed on the light emitting structure. A support member is formed under the light emitting structure. A first insulation layer (194) is formed on the light emitting structure. A second insulation layer (190) is formed on the first insulation layer.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to a light emitting device, a light emitting device manufacturing method, and a light emitting device package.

Group 3-5 nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. The?-? Nitride semiconductor is usually composed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 = x = 1, 0 = y = 1, 0 = x + y = 1).

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, display devices, electronic displays, and lighting devices of mobile phones.

The embodiment provides a light emitting device including a light emitting structure and a plurality of insulating layers, and a light emitting device package including the light emitting device.

The embodiment provides a light emitting device including a plurality of insulating layers having different refractive indices on a light emitting structure, and a light emitting device package having the same.

Embodiments may include a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode on the light emitting structure; A support member under the light emitting structure; A first insulating layer formed on an upper surface of the light emitting structure; And a second insulating layer formed on the top and side surfaces of the light emitting structure, and the refractive indexes of the first insulating layer and the second insulating layer between the light emitting structure and the outside vary in stages.

The embodiment can improve light extraction efficiency by forming a plurality of insulating layers having different refractive indices on the light emitting structure.

According to the embodiment, the light extraction efficiency may be improved by forming an insulating layer on which the refractive index is gradually reduced by using the inclined incident deposition on the light emitting structure.

The embodiment can improve current spreading efficiency while adjusting the refractive index by using a material having weak conductivity as the insulating layer.

1 is a side cross-sectional view showing a light emitting device according to an embodiment.
FIG. 2 is a detailed view of the upper portion of the light emitting device of FIG. 1.
3 to 13 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
14 is a view showing a light emitting device package having a light emitting device of the embodiment.
FIG. 15 illustrates a display device including the light emitting device package of FIG. 14, according to an exemplary embodiment.
16 is a diagram illustrating another example of a display device including the light emitting device package of FIG. 14, according to an exemplary embodiment.
17 is a view showing a lighting device having a light emitting device package of FIG. 14 according to an embodiment.

Hereinafter, a light emitting device and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings. In the description of an embodiment, each layer (film), region, pattern, or structure is formed “on” or “under” a substrate, each layer (film), region, pad, or pattern. In the case where it is described as "to", "on" and "under" include both "directly" or "indirectly" formed. In addition, the criteria for the above / above or below of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1 is a side cross-sectional view illustrating a light emitting device according to a first embodiment, and FIG. 2 is a detailed top view of the light emitting device of FIG. 1.

Referring to FIG. 1, the light emitting device 100 includes a light emitting structure 135 having a plurality of compound semiconductor layers 110, 120, and 130, an electrode 115, a channel layer 142, a current blocking layer 145, and a reflective electrode layer 152. ), A barrier layer 154, a bonding layer 156, and a support member 170.

The light emitting device 100 may be implemented as a light emitting diode (LED) including a compound semiconductor, for example, a compound semiconductor of?-? Element, and the LED may be visible to emit light such as blue, green, or red. It may be an LED of the light band or UV LED of the ultraviolet band, but is not limited thereto.

The light emitting structure 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130.

The first conductive semiconductor layer 110 is a compound semiconductor of a group III-V group element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. A semiconductor layer having a compositional formula of the first conductive semiconductor layer 110 is _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) It may include. The first conductive semiconductor layer 110 is an N-type semiconductor layer, and the first conductive dopant includes an N-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto. The top surface of the first conductive semiconductor layer 110 may have a roughness or pattern, such as the light extraction structure 112, for light extraction efficiency, and a transparent electrode layer may be selectively formed for current diffusion and light extraction. But it is not limited thereto.

The electrode 115 may be formed on the first conductive semiconductor layer 110. The electrode 115 may be a pad or may include a branched electrode pattern connected to the pad, but is not limited thereto. Roughness in the form of irregularities may be formed on an upper surface of the electrode 115, but is not limited thereto. The lower surface of the electrode 115 may be formed in a concave-convex shape by the light extraction structure 112, but is not limited thereto.

The electrode 115 is in ohmic contact with the upper surface of the first conductive semiconductor layer 110, for example, Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Cu and Any one or a plurality of materials of Au may be mixed to form a single layer or multiple layers. The electrode 115 may be selected from the above materials in consideration of ohmic contact with the first conductive semiconductor layer 110, adhesion between the metal layers, reflective properties, and conductive properties. The pad of the electrode 115 may be formed in a single or plural, but is not limited thereto.

The active layer 120 is formed under the first conductive semiconductor layer 110 and includes at least one of a single quantum well structure, a multi-quantum well structure, a quantum-wire structure, or a quantum dot structure. It can be formed of either. The active layer 120 may be formed using a compound semiconductor material of?-? Element, such as a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, or It may be formed in a cycle of the InGaN well layer / InGaN barrier layer. The barrier layer may be formed of a material having a band gap wider than that of the well layer.

A first conductive type and / or a second conductive type cladding layer may be formed on or under the active layer 120, and the first and second conductive cladding layers may be formed of an AlGaN-based semiconductor. . The band gap of the conductive clad layer may be wider than the band gap of the barrier layer of the active layer 120.

The second conductive semiconductor layer 130 is formed under the active layer 120, and is a compound semiconductor of a Group III-V group element doped with a second conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. A semiconductor layer having a compositional formula of the second conductive type semiconductor layer 130 may be _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) It may include. The second conductive semiconductor layer 130 is a P-type semiconductor layer, and the second conductive dopant includes a P-type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The outer side of the light emitting structure 135 may be formed to be inclined or vertical. Here, the width of the upper surface of the light emitting structure 135 may be formed wider than the width of the lower surface, this width difference may form a side surface of the light emitting structure 135 in an inclined structure.

The light emitting structure 135 may further include a third conductive semiconductor layer under the second conductive semiconductor layer 130, and the third conductive semiconductor layer may be opposite to the second conductive semiconductor layer. It can have polarity. In addition, the first conductive semiconductor layer 110 may be a P-type semiconductor layer, and the second conductive semiconductor layer 130 may be implemented as an N-type semiconductor layer. Accordingly, the light emitting structure 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure. Hereinafter, for convenience of description, the lower layer of the light emitting structure 135 will be described as an example in which a second conductive semiconductor layer is disposed.

A channel layer 142 and a current blocking layer 145 are disposed under the second conductive semiconductor layer 130.

The channel layer 142 is disposed around the bottom of the second conductive semiconductor layer 130, and the current blocking layer 145 is disposed below the second conductive semiconductor layer 130.

An inner portion of the channel layer 142 may be disposed under the light emitting structure 135 and may contact the bottom surface of the second conductive semiconductor layer 130. An outer portion of the channel layer 142 may be disposed on an outer line from below the light emitting structure 135 than to the side surface of the light emitting structure 135. An outer portion of the channel layer 142 may be disposed in a channel region that is an outer region than the side surface of the second conductive semiconductor layer 130 to protect the side surface of the light emitting structure 135. The channel region may have a stepped structure between the light emitting structure 135 and the conductive member 160 and may be a peripheral region of an upper portion of the light emitting device.

The channel layer 142 may be formed of a light transmitting material, and the light transmitting material may be selected from a metal oxide or a metal nitride. The channel layer 142 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), or indium gallium zinc oxide (IGZO). ), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO ₂ , SiOx, SiOxNy, Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ And the like. The refractive index of the channel layer 142 may be formed of a material having a refractive index lower than that of the compound semiconductor layer, for example, a transparent nitride, a transparent oxide, and a transparent insulating layer.

The channel layer 142 may receive a portion of the light emitted from the active layer 120 and emit it through the surface. Accordingly, the light extraction efficiency can be improved.

The channel layer 142 may be formed of a metallic material, and the metallic material may be bonded to any one of the conductive members 160.

The channel layer 142 may be formed in a pattern such as a loop shape, a ring shape, or a frame shape around a lower surface of the second conductive semiconductor layer 130. The channel layer 142 may include a continuous pattern shape or a discontinuous pattern shape, or may be formed on a path of a laser irradiated to the channel region during the manufacturing process.

When the channel layer 142 is SiO ₂ , the refractive index is about 2.3, the ITO refractive index is about 2.1, and the GaN refractive index is about 2.4, and the channel layer 142 is formed through the second conductive semiconductor layer 130. The light incident on) may be emitted to the outside.

The channel layer 142 may be omitted.

When the channel layer 142 is a light-transmissive material, the laser irradiated during laser scribing is transmitted, thereby preventing fragmentation of the metal material due to the laser in the channel region, and thus, an interlayer short circuit problem in the sidewall of the light emitting structure 135. Can be prevented.

The channel layer 142 may space the gap between the outer walls of the layers 110, 120, and 130 of the light emitting structure 135 and the barrier layer 154. The channel layer 142 may be formed to a thickness of 0.02 ~ 5㎛, the thickness may vary depending on the chip size.

The current blocking layer 145 is disposed between the conductive layer 148 and the second conductive semiconductor layer 130.

The current blocking layer 145 is formed of a material having a lower electrical conductivity than the conductive layer 148, and blocks the current to be supplied to the other region.

The current blocking layer 145 may be formed in a plurality of pieces separated in the thickness direction of the light emitting structure 135.

The conductive layer 148 contacts the bottom surface of the light emitting structure 135, for example, the bottom surface of the second conductive semiconductor layer 130. The conductive layer 148 may be disposed between the channel layer 142 and the current blocking layer 145 to be in ohmic contact with a bottom surface of the second conductive semiconductor layer 130. The conductive layer 148 may be further formed below the channel layer 142 and the current blocking layer 145, but is not limited thereto.

The conductive layer 148 may be formed to a thickness of 20 to 50 nm, and the material may include a conductive oxide and a conductive nitride, for example, indium tin oxide (ITO), indium zinc oxide (IZO), or IZO nitride (IZON). , Indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium (GZO) zinc oxide). The conductive layer 148 may not be formed on the bottom surface of the channel layer 142, but is not limited thereto.

The reflective electrode layer 152 is formed under the conductive layer 148, and the reflective electrode layer 152 may be formed on the entire lower surface or a portion of the lower surface of the conductive layer 148.

The reflective electrode layer 152 is electrically connected to the conductive layer 148 and supplies power. The width of the reflective electrode layer 152 may be formed to be at least larger than the width of the light emitting structure 135, in this case it can effectively reflect the incident light. Accordingly, the light extraction efficiency can be improved.

The reflective electrode layer 152 is formed not to be exposed to the side surface of the light emitting device, which can prevent damage in the channel region of the light emitting structure 135 by the material of the reflective electrode layer 152.

The reflective electrode layer 152 may be formed in a single layer or multiple layers by selectively using a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. Can be. The reflective electrode layer 152 may be formed in multiple layers using the above materials and materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. For example, IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like can be laminated. The thickness of the reflective electrode layer 152 may be formed to a thickness of 150 ~ 300nm, but is not limited thereto.

The barrier layer 154 may be formed under the reflective electrode layer 152 and may contact the conductive layer 148 disposed under the channel layer 142, but is not limited thereto. The barrier layer 154 is a barrier metal, and may include, for example, at least one of Ti, W, Pt, Pd, Rh, and Ir. The barrier layer 154 may affect the reflective electrode layer 152 from the bonding layer 156. It blocks you from giving. The barrier layer 154 may have a thickness of 300 to 500 nm, but is not limited thereto.

A bonding layer 156 is formed below the barrier layer 154, and the bonding layer 156 bonds the support member 170 to the barrier layer 154.

The bonding layer 156 may include at least one of a bonding metal, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. The bonding layer 156 serves as a bonding layer, for example, and a support member 170 is bonded thereunder. The support member 170 may be attached to the support member 170 under the reflective electrode layer 152 by plating or a conductive sheet without forming the bonding layer 156 and the barrier layer 154. The thickness of the bonding layer 156 may be formed of 5 ~ 9㎛, but is not limited thereto.

A support member 170 is formed below the bonding layer 156, and the support member 170 is a conductive substrate, and includes copper (Cu), gold (Au), nickel (Ni), and molybdenum (Mo). , Copper-tungsten (Cu-W) and the like. In addition, the support member 170 may be implemented as a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN, etc.). In addition, the support member 170 may not be formed or implemented as a conductive sheet. The support member 170 may be formed to 50 ~ 300㎛, it is not limited thereto.

The conductive layer 148, the reflective electrode layer 152, the barrier layer 154, and the bonding layer 156 may be defined as the conductive member 160 or the electrode member.

The first insulating layer 194 is formed on an upper surface of the light emitting structure 135 and an upper surface of the first conductive semiconductor layer 110.

The first insulating layer 194 is formed only on the upper surface of the light emitting structure 135. A semiconductor layer having a compositional formula of the first conductive semiconductor layer 110 is _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) When formed, the refractive index n1 of the first conductivity type semiconductor layer 110 has 2.5 or more.

In this case, the first insulating layer 194 is formed to have a higher refractive index (n2) than the first conductive semiconductor layer 110, and materials such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, and the like. When formed as, the refractive index (n2) of the first insulating layer 194 is 2 or less, when formed of ITO, may have a refractive index of about 1.86.

As such, when the first insulating layer 194 is formed of a light-transmitting metal oxide such as ITO, it has a weak electrical conductivity to spread the current applied from the first electrode 115 as an ohmic contact layer as well as buffering the refractive index. It can play a role.

The second insulating layer 190 covering the entire light emitting structure 135 is formed on the first insulating layer 194.

The second insulating layer 190 has a lower refractive index (n3) than the first insulating layer 194, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ ≪ / RTI >

In this case, the second insulating layer 190 is formed by a glancing angle deposition method so that the refractive index n3 is lowered upward.

Therefore, the refractive index n3 of the second insulating layer 190 is gradually changed within a range smaller than the first insulating layer 194 and larger than the refractive index n _{air of the air} .

Therefore, when the second insulating layer 190 is formed of SiO ₂ and the first insulating layer 194 is formed of ITO, the second insulating layer 190 has a refractive index gradually decreasing from 1.86 to 1. may have (n3).

As such, when the insulating layers 194 and 190 having the refractive index gradually decrease between the light emitting structure 135 and the air are formed in multiple layers, the light emitted from the light emitting structure 135 is not reflected between the layers and is emitted into the air. Thus, light emission efficiency is improved.

3 to 13 are views illustrating a manufacturing process of the light emitting device of FIG. 1.

Referring to FIGS. 3 and 4, the substrate 101 is loaded onto growth equipment, and a compound semiconductor of group 2 to 6 elements may be formed in a layer or pattern form thereon.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The substrate 101 may be selected from an insulating, transmissive, or conductive material as a substrate, for example, sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , conductive Substrate, and GaAs. An uneven structure may be formed on the upper surface of the substrate 101. In addition, between the substrate 101 and the light emitting structure 135, a layer or a pattern using a compound semiconductor of Group 2 to Group 6 elements is, for example, a ZnO layer (not shown), a buffer layer (not shown), an undoped semiconductor layer (not shown). At least one layer may be formed. The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of group III-V group elements, and the buffer layer may reduce the difference in lattice constant between the substrate and the compound semiconductor, and the undoped semiconductor layer may be It may be formed of a nitride-based semiconductor that is not doped. The undoped semiconductor layer may have lower conductivity than the first conductive semiconductor layer 110 and may improve crystallinity of the first conductive semiconductor layer 110.

A first conductive semiconductor layer 110 is formed on the substrate 101, an active layer 120 is formed on the first conductive semiconductor layer 110, and a second conductive semiconductor layer is formed on the active layer 120. 130 is formed.

The first conductive semiconductor layer 110 is a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP , AlGaInP and the like. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

An active layer 120 is formed on the first conductive semiconductor layer 110, and the active layer 120 may be formed as a single quantum well structure or a multi quantum well structure. The active layer 120 may be formed using a compound semiconductor material of Group 3-5 elements, such as a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer, a period of an InGaN well layer / AlGaN barrier layer, InGaN well layer / InGaN barrier layer may be formed in a cycle, and the like, but is not limited thereto. The band gap of the barrier layer may be higher than the band gap of the well layer.

The first conductive type and / or the second conductive cladding layer may be formed on or under the active layer 120, and the first and second conductive cladding layers may be formed of a nitride based semiconductor. . The first and second conductive clad layers may be formed of a material having a band gap higher than that of the barrier layer.

The second conductive semiconductor layer 130 is formed on the active layer 120, and the second conductive semiconductor layer 130 is a compound semiconductor of a Group 3-5 element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be defined as a light emitting structure 135. In addition, a third conductive semiconductor layer, for example, an N-type semiconductor layer, having a polarity opposite to that of the second conductive type may be further formed on the second conductive semiconductor layer 130. Accordingly, the light emitting structure 135 may have at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

Referring to FIG. 4, the channel layer 142 is formed in the boundary region of the unit chip size T1. The channel layer 142 may have a ring shape, a loop shape, a frame shape, or the like along a boundary area of the chip size T1, and may be formed in a continuous pattern shape or a discontinuous pattern shape. The channel layer 142 may be formed after protecting the protective region with a mask layer, or may remove the region to be etched after forming the channel layer 142. The channel layer 142 may be formed by a sputtering or deposition method, but is not limited thereto.

Materials having a lower refractive index than the III-V compound semiconductors may be selected from metal oxides, metal nitrides, or insulating materials, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ may be selectively formed.

When the channel layer 142 is omitted, the process of FIG. 4 may be omitted.

In addition, as illustrated in FIG. 5, a current blocking layer 145 in contact with an upper surface of the second conductive semiconductor layer 130 is formed in an inner region of the channel layer 142. The current blocking layer 145 may be formed by protecting the protective region with a mask layer or by selectively removing the current blocking layer 145. The current blocking layer 145 may be formed using a sputtering method, a deposition method, or a printing method, but is not limited thereto.

The conductive layer 148 is formed on the upper surface of the light emitting structure 135, for example, the upper surface of the second conductive semiconductor layer 130. The conductive layer 148 may be formed by a sputtering or deposition method, and is in ohmic contact with an upper surface of the second conductive semiconductor layer 130.

The conductive layer 148 may be formed on the second conductive semiconductor layer 130, the channel layer 142, and the current blocking layer 145. The conductive layer 148 may be formed on a portion of the upper surface of the channel layer 142 or may not be formed on the upper surface, but is not limited thereto. The conductive layer 148 includes any one of a transparent conductive oxide and a conductive nitride, but is not limited thereto.

Referring to FIG. 6, a reflective electrode layer 152 is formed on the conductive layer 148, and a barrier layer 154 is formed on the reflective electrode layer 152. The reflective electrode layer 152 may be deposited by E-beam (electron beam), sputtering, or plating. The reflective electrode layer 152 is formed of a material having a reflective property of 70% or more, such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a material composed of an optional alloy thereof. It may be formed in a single layer or multiple layers. In addition, the reflective electrode layer 152 may be formed in a multilayer using the metal material and conductive oxide materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. For example, IZO / Ni, AZO / Ag , IZO / Ag / Ni, AZO / Ag / Ni and the like.

The reflective electrode layer 152 may be formed up to the channel layer 142. Since the reflective electrode layer 152 is implemented using a reflective metal, the reflective electrode layer 152 may serve as an electrode.

A barrier layer 154 is formed on the reflective electrode layer 152, and the barrier layer 154 may be formed by a sputtering or deposition method. The barrier layer 154 may include at least one of Ti, W, Pt, Pd, Rh, and Ir as a barrier metal. The barrier layer 154 may also be in contact with the top surface of the conductive layer 148, but is not limited thereto.

Referring to FIG. 7, a bonding layer 156 is formed on the barrier layer 154. The bonding layer 156 may be formed by a sputtering or deposition method, and the material may be a metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. It may include, but is not limited thereto.

The bonding layer 156 is a bonding layer, and the support member 170 may be bonded thereon. The support member 170 is a conductive support member, and includes copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu-W), and a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN, etc.) may be implemented. The support member 170 may be bonded to the bonding layer 156, formed as a plating layer, or attached in the form of a conductive sheet. In an embodiment, the bonding layer 156 and the barrier layer 154 may not be formed. In this case, the conductive support member 170 may be formed on the reflective electrode layer 152.

8 to 10, the support member 170 is positioned at the base, and the substrate 101 is positioned at the uppermost side. Thereafter, the substrate 101 disposed on the light emitting structure 135 is removed.

The removal method of the substrate 101 may be removed by a laser lift off (LLO) process. The laser lift-off method is a method of irradiating and separating a laser having a wavelength of a predetermined region to the substrate 101. Here, when there is another semiconductor layer (eg, buffer layer) or an air gap between the substrate 101 and the first conductivity type semiconductor layer 110, the substrate may be separated using a wet etching solution. It does not limit about a removal method.

Referring to FIG. 10, the channel region 105, which is the boundary region of the chip size T1, is removed by isolation etching. That is, a portion of the channel layer 142 may be exposed by isolating the chip and the chip boundary region, and the side surface of the light emitting structure 135 may be inclined or vertically formed.

When the channel layer 142 is a light-transmissive material, the laser irradiated in the isolation etching or laser scribing process is transmitted to thereby transmit a metal material below the barrier layer 154, the bonding layer 156, and the supporting member. It is possible to suppress the material of 170 from protruding in the direction in which the laser is irradiated or generating debris.

Here, the channel layer 142 may transmit the light of the laser, thereby preventing the generation of metal fragments by the laser in the channel region 105, and may protect the outer wall of each layer of the light emitting structure 135.

The upper surface of the first conductive semiconductor layer 110 is etched to form a light extracting structure 112, and the light extracting structure 112 is formed in a roughness or uneven pattern to extract light. Can improve.

Referring to FIG. 11, an electrode 115 is formed on the first conductive semiconductor layer 110. The electrode 115 may be formed by a deposition method, a sputtering method or a plating method, but is not limited thereto. The number of the electrodes 115 may be formed in one or more, and the positions thereof may be overlapped in the thickness direction of the region of the current blocking layer 145 and the light emitting structure 135. The electrode 115 may include a branched pattern and a pad having a predetermined shape. The formation process of the electrode 115 may be performed before or after chip separation, but is not limited thereto.

Referring to FIG. 12, a first insulating layer 194 is formed on the upper surface of the light emitting structure 135.

The first insulating layer 194 is formed to have a higher refractive index n2 than the first conductive semiconductor layer 110 and is formed of a material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or the like. When the refractive index n2 of the first insulating layer 194 is 2 or less and formed of ITO, the refractive index n1 may have a refractive index of about 1.86.

As such, when the first insulating layer 194 is formed of a light-transmitting metal oxide such as ITO, the first insulating layer 194 has a weak electrical conductivity, and serves to spread the current applied from the first electrode as an ohmic contact layer as well as buffering the refractive index. Can be done.

Next, as shown in FIG. 13, a second insulating layer 190 is formed around the light emitting structure 135. The second insulating layer 190 is formed around the chip, and a lower end thereof is formed on the channel layer 142 and extends to an upper surface of the first conductive semiconductor layer 110. The second insulating layer 190 may be formed around the light emitting structure 135 to prevent a short between the layers 110, 120, and 130 of the light emitting structure 135. In addition, the second insulating layer 190 and the channel layer 142 may prevent moisture from penetrating into the chip.

The second insulating layer 190 may be formed of an insulating material lower than the first insulating layer 194, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _2, or the like. Can be.

The second insulating layer 190 is deposited while tilting the substrate by a gradient incidence deposition method while rotating. The refractive index n3 of the second insulating layer 190 formed by the gradient incidence deposition method is gradually changed within a range smaller than the first insulating layer 194 and larger than the refractive index n _{air of air} .

Therefore, when the second insulating layer 190 is formed of SiO ₂ and the first insulating layer 194 is formed of ITO, the second insulating layer 190 has a refractive index gradually decreasing from 1.86 to 1. may have (n3).

As such, when the insulating layers 194 and 190 having the refractive index gradually decrease between the light emitting structure 135 and the air are formed in multiple layers, the light emitted from the light emitting structure 135 is not reflected between the layers and is emitted into the air. Thus, light emission efficiency is improved.

In addition, it may be manufactured as shown in FIG. 1 by dividing into individual chip units based on the boundary region of the unit chip size T1. In this case, the chip-based separation method may selectively use a cutting process, a laser, or a breaking process.

14 is a view showing a light emitting device package according to the embodiment.

Referring to FIG. 14, the light emitting device package 30 according to the embodiment includes a body 31, a first lead electrode 32 and a second lead electrode 33 installed on the body 31, and the body ( The light emitting device 100 according to the exemplary embodiment installed in the 31 and electrically connected to the first lead electrode 32 and the second lead electrode 33, and the molding member 37 surrounding the light emitting device 100. ).

The body 31 may include a silicon material, a synthetic resin material, or a metal material, and a cavity having an inclined surface may be formed around the light emitting device 100.

The first lead electrode 32 and the second lead electrode layer 33 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 32 and the second lead electrode 33 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be installed on the body 31 or on the first lead electrode 32 or the second lead electrode 33.

The light emitting device 100 may be mounted on the first lead electrode 32 and connected to the second lead electrode 33 by a wire 36. As another example, the light emitting device 100 may be flipped or die bonded. It may be electrically connected.

The molding member 37 may surround and protect the light emitting device 100. In addition, the molding member 37 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

The light emitting device of FIG. 1 or the light emitting device package of FIG. 14 according to the embodiment may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 15 and 16 and a lighting device shown in FIG. 17. Etc. may be included.

15 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 15, the display device 1000 includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 30 according to the above-described embodiment, and the light emitting device package 30 may be arranged on the substrate 1033 at predetermined intervals. have. The substrate may be a printed circuit board, but is not limited thereto. In addition, the substrate 1033 may include a metal core PCB (MCPCB, Metal Core PCB), flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 30 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 30 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 30 may be mounted on the substrate 1033 such that an emission surface on which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 30 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

16 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

Referring to FIG. 16, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 30 described above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 30 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, and light condensation of the light emitted from the light emitting module 1060.

17 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 17, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 30 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 30 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 30 may be mounted on the substrate 1532. Each of the light emitting device packages 30 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 30 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Reference Signs List 100 light emitting element, 110 first conductive semiconductor layer, 120 active layer, 130 second conductive semiconductor layer, 115 electrode, 145 current blocking layer, 148 conductive layer, 152 reflective electrode layer, 154 barrier Layer, 156: bonding layer, 170: support member, 194: first insulating layer, 190: second insulating layer

Claims (12)

A light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode on the light emitting structure;
A support member under the light emitting structure;
A first insulating layer on the light emitting structure; And
A second insulating layer on the first insulating layer
/ RTI >
A light emitting device in which the refractive indexes of the first insulating layer and the second insulating layer are variable. The method of claim 1,
The refractive index of the first insulating layer has a value between the refractive index of the light emitting structure and the second insulating layer. The method of claim 2,
The refractive index of the second insulating layer is variable between the refractive index of the first insulating layer and air. The method of claim 3,
The second insulating layer is a light emitting element formed by a gradient incidence deposition method. The method of claim 2,
A current blocking layer positioned below the light emitting structure,
A conductive layer located below the current blocking layer, and
Bonding layer between the conductive layer and the support member
Light emitting device further comprising. The method of claim 5,
The conductive layer may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), indium gallium zinc oxide (IGZO), or IGTO (IGTO). A light emitting device comprising at least one of indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO). The method of claim 5,
The current blocking layer is a light emitting device formed of a plurality of pieces separated from each other. The method of claim 1,
The first insulating layer includes at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. 9. The method of claim 8,
The second insulating layer is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ Light emitting device comprising at least one of. The method of claim 1,
The upper surface of the light emitting structure has a light extraction pattern. The method of claim 1,
The first insulating layer has a lower electrical conductivity than the first electrode. The method of claim 1,
The refractive index of the light emitting structure is greater than or equal to the refractive index of the first insulating layer, the refractive index of the first insulating layer is greater than or equal to the refractive index of the second insulating layer.

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