KR20130061124A - Silane coupling agent, negative-type photosensitive resin composition, curable film and touch panel component - Google Patents
Silane coupling agent, negative-type photosensitive resin composition, curable film and touch panel component Download PDFInfo
- Publication number
- KR20130061124A KR20130061124A KR1020127024097A KR20127024097A KR20130061124A KR 20130061124 A KR20130061124 A KR 20130061124A KR 1020127024097 A KR1020127024097 A KR 1020127024097A KR 20127024097 A KR20127024097 A KR 20127024097A KR 20130061124 A KR20130061124 A KR 20130061124A
- Authority
- KR
- South Korea
- Prior art keywords
- resin composition
- photosensitive resin
- silane coupling
- coupling agent
- negative photosensitive
- Prior art date
Links
- 239000006087 Silane Coupling Agent Substances 0.000 title claims abstract description 79
- 239000011342 resin composition Substances 0.000 title claims description 108
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 13
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 125000001424 substituent group Chemical group 0.000 claims abstract description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 9
- 125000000962 organic group Chemical group 0.000 claims abstract description 6
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 5
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims abstract description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 4
- -1 acryl Chemical group 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 17
- 229920000178 Acrylic resin Polymers 0.000 claims description 14
- 239000004925 Acrylic resin Substances 0.000 claims description 14
- 239000000178 monomer Substances 0.000 claims description 11
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 239000007870 radical polymerization initiator Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 24
- 239000000126 substance Substances 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 150000001721 carbon Chemical group 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 82
- 239000000243 solution Substances 0.000 description 59
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 53
- 239000011259 mixed solution Substances 0.000 description 47
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 21
- 238000003786 synthesis reaction Methods 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 19
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 238000011161 development Methods 0.000 description 14
- 239000004094 surface-active agent Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229920001296 polysiloxane Polymers 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229920001187 thermosetting polymer Polymers 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- XESZUVZBAMCAEJ-UHFFFAOYSA-N 4-tert-butylcatechol Chemical compound CC(C)(C)C1=CC=C(O)C(O)=C1 XESZUVZBAMCAEJ-UHFFFAOYSA-N 0.000 description 8
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- ZADOWCXTUZWAKL-UHFFFAOYSA-N 3-(3-trimethoxysilylpropyl)oxolane-2,5-dione Chemical compound CO[Si](OC)(OC)CCCC1CC(=O)OC1=O ZADOWCXTUZWAKL-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 6
- 206010047571 Visual impairment Diseases 0.000 description 5
- 125000003277 amino group Chemical group 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- 208000009322 hypertrophic pyloric stenosis Diseases 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000010526 radical polymerization reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- NXEOWHHSWZHJPU-UHFFFAOYSA-N 2-[2-(2-methylbutan-2-ylamino)-2-oxoethyl]-5-trimethoxysilylpentanoic acid Chemical compound C(C)(C)(CC)NC(CC(C(=O)O)CCC[Si](OC)(OC)OC)=O NXEOWHHSWZHJPU-UHFFFAOYSA-N 0.000 description 3
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 3
- XONHRWVRGDYLMG-UHFFFAOYSA-N 3-(tert-butylcarbamoyl)-6-trimethoxysilylhexanoic acid Chemical compound CO[Si](OC)(OC)CCCC(CC(O)=O)C(=O)NC(C)(C)C XONHRWVRGDYLMG-UHFFFAOYSA-N 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229910052618 mica group Inorganic materials 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 150000002923 oximes Chemical class 0.000 description 3
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 2
- WGQGVNPPSCMSLJ-UHFFFAOYSA-N 2-[2-(tert-butylamino)-2-oxoethyl]-5-triethoxysilylpentanoic acid Chemical compound C(C)(C)(C)NC(CC(C(=O)O)CCC[Si](OCC)(OCC)OCC)=O WGQGVNPPSCMSLJ-UHFFFAOYSA-N 0.000 description 2
- UDKNOHSXYQTBOS-UHFFFAOYSA-N 2-[2-oxo-2-(propan-2-ylamino)ethyl]-5-trimethoxysilylpentanoic acid Chemical compound C(C)(C)NC(CC(C(=O)O)CCC[Si](OC)(OC)OC)=O UDKNOHSXYQTBOS-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- XSGRJZPPQFXMIX-UHFFFAOYSA-N 3-(2-methylbutan-2-ylcarbamoyl)-6-trimethoxysilylhexanoic acid Chemical compound C(C)(C)(CC)NC(=O)C(CC(=O)O)CCC[Si](OC)(OC)OC XSGRJZPPQFXMIX-UHFFFAOYSA-N 0.000 description 2
- YKJUEVDNMCEERC-UHFFFAOYSA-N 3-(propan-2-ylcarbamoyl)-6-trimethoxysilylhexanoic acid Chemical compound C(C)(C)NC(=O)C(CC(=O)O)CCC[Si](OC)(OC)OC YKJUEVDNMCEERC-UHFFFAOYSA-N 0.000 description 2
- WQHJTHWEUSYDPW-UHFFFAOYSA-N 3-(tert-butylcarbamoyl)-6-triethoxysilylhexanoic acid Chemical compound C(C)(C)(C)NC(=O)C(CC(=O)O)CCC[Si](OCC)(OCC)OCC WQHJTHWEUSYDPW-UHFFFAOYSA-N 0.000 description 2
- BNDRWEVUODOUDW-UHFFFAOYSA-N 3-Hydroxy-3-methylbutan-2-one Chemical compound CC(=O)C(C)(C)O BNDRWEVUODOUDW-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- LUONPEUENMSSCS-UHFFFAOYSA-N 6-trimethoxysilylhexanoic acid Chemical compound CO[Si](OC)(OC)CCCCCC(O)=O LUONPEUENMSSCS-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N Benzoic acid Natural products OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 235000010233 benzoic acid Nutrition 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 150000008366 benzophenones Chemical class 0.000 description 2
- 150000001565 benzotriazoles Chemical class 0.000 description 2
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- MRJXZRBBFSDWFR-UHFFFAOYSA-N diethoxy-methyl-[1-(7-oxabicyclo[4.1.0]heptan-4-yl)ethoxy]silane Chemical compound C1C(C(C)O[Si](C)(OCC)OCC)CCC2OC21 MRJXZRBBFSDWFR-UHFFFAOYSA-N 0.000 description 2
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical group CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 2
- PBDDFKGMGASJHE-UHFFFAOYSA-N dimethoxy-methyl-(7-oxabicyclo[4.1.0]heptan-4-ylmethoxy)silane Chemical compound C1C(CO[Si](C)(OC)OC)CCC2OC21 PBDDFKGMGASJHE-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N hexane carboxylic acid Natural products CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000007974 melamines Chemical class 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 150000003918 triazines Chemical class 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- QAEDNLDMOUKNMI-UHFFFAOYSA-O (4-hydroxyphenyl)-dimethylsulfanium Chemical compound C[S+](C)C1=CC=C(O)C=C1 QAEDNLDMOUKNMI-UHFFFAOYSA-O 0.000 description 1
- 0 **(C(NCI)=O)C(O)=O Chemical compound **(C(NCI)=O)C(O)=O 0.000 description 1
- NOHNQBSUXAVDOP-UHFFFAOYSA-N 1-[4-[(2-methylphenyl)methylsulfanylmethyl]phenyl]ethanone Chemical compound C1=CC(C(=O)C)=CC=C1CSCC1=CC=CC=C1C NOHNQBSUXAVDOP-UHFFFAOYSA-N 0.000 description 1
- NVZWEEGUWXZOKI-UHFFFAOYSA-N 1-ethenyl-2-methylbenzene Chemical compound CC1=CC=CC=C1C=C NVZWEEGUWXZOKI-UHFFFAOYSA-N 0.000 description 1
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- BGRKGHSKCFAPCL-UHFFFAOYSA-N 2-(2-methylbutan-2-yl)phenol Chemical compound CCC(C)(C)C1=CC=CC=C1O BGRKGHSKCFAPCL-UHFFFAOYSA-N 0.000 description 1
- AHNLTPNNRFETEC-UHFFFAOYSA-N 2-(3-trimethoxysilylpropyl)butanedioic acid Chemical compound CO[Si](OC)(OC)CCCC(C(O)=O)CC(O)=O AHNLTPNNRFETEC-UHFFFAOYSA-N 0.000 description 1
- LEVFXWNQQSSNAC-UHFFFAOYSA-N 2-(4,6-diphenyl-1,3,5-triazin-2-yl)-5-hexoxyphenol Chemical compound OC1=CC(OCCCCCC)=CC=C1C1=NC(C=2C=CC=CC=2)=NC(C=2C=CC=CC=2)=N1 LEVFXWNQQSSNAC-UHFFFAOYSA-N 0.000 description 1
- ROYZOPPLNMOKCU-UHFFFAOYSA-N 2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl-tripropoxysilane Chemical compound C1C(CC[Si](OCCC)(OCCC)OCCC)CCC2OC21 ROYZOPPLNMOKCU-UHFFFAOYSA-N 0.000 description 1
- VQMHSKWEJGIXGA-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-6-dodecyl-4-methylphenol Chemical compound CCCCCCCCCCCCC1=CC(C)=CC(N2N=C3C=CC=CC3=N2)=C1O VQMHSKWEJGIXGA-UHFFFAOYSA-N 0.000 description 1
- FJGQBLRYBUAASW-UHFFFAOYSA-N 2-(benzotriazol-2-yl)phenol Chemical compound OC1=CC=CC=C1N1N=C2C=CC=CC2=N1 FJGQBLRYBUAASW-UHFFFAOYSA-N 0.000 description 1
- PUBNJSZGANKUGX-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=C(C)C=C1 PUBNJSZGANKUGX-UHFFFAOYSA-N 0.000 description 1
- JJRUAPNVLBABCN-UHFFFAOYSA-N 2-(ethenoxymethyl)oxirane Chemical compound C=COCC1CO1 JJRUAPNVLBABCN-UHFFFAOYSA-N 0.000 description 1
- CBKJLMZJKHOGEQ-UHFFFAOYSA-N 2-(oxiran-2-yl)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCC1CO1 CBKJLMZJKHOGEQ-UHFFFAOYSA-N 0.000 description 1
- QNYBOILAKBSWFG-UHFFFAOYSA-N 2-(phenylmethoxymethyl)oxirane Chemical compound C1OC1COCC1=CC=CC=C1 QNYBOILAKBSWFG-UHFFFAOYSA-N 0.000 description 1
- YSORKLMHUWHFIJ-UHFFFAOYSA-N 2-(tert-butylcarbamoyl)-4-(2-trimethoxysilylethyl)cyclohexane-1-carboxylic acid Chemical compound C(C)(C)(C)NC(=O)C1C(CCC(C1)CC[Si](OC)(OC)OC)C(=O)O YSORKLMHUWHFIJ-UHFFFAOYSA-N 0.000 description 1
- WZYITJZDLDRVAK-UHFFFAOYSA-N 2-(tert-butylcarbamoyl)-5-(2-trimethoxysilylethyl)cyclohexane-1-carboxylic acid Chemical compound C(C)(C)(C)NC(=O)C1C(CC(CC1)CC[Si](OC)(OC)OC)C(=O)O WZYITJZDLDRVAK-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- OCKQMFDZQUFKRD-UHFFFAOYSA-N 2-[(3-ethenylphenyl)methoxymethyl]oxirane Chemical compound C=CC1=CC=CC(COCC2OC2)=C1 OCKQMFDZQUFKRD-UHFFFAOYSA-N 0.000 description 1
- ZADXFVHUPXKZBJ-UHFFFAOYSA-N 2-[(4-ethenylphenyl)methoxymethyl]oxirane Chemical compound C1=CC(C=C)=CC=C1COCC1OC1 ZADXFVHUPXKZBJ-UHFFFAOYSA-N 0.000 description 1
- AJJLBMIIDVIQIA-UHFFFAOYSA-N 2-[1-(2-ethenylphenyl)ethoxymethyl]oxirane Chemical compound C=1C=CC=C(C=C)C=1C(C)OCC1CO1 AJJLBMIIDVIQIA-UHFFFAOYSA-N 0.000 description 1
- WZPIYCSDWSSKRZ-UHFFFAOYSA-N 2-[1-(3-ethenylphenyl)ethoxymethyl]oxirane Chemical compound C=1C=CC(C=C)=CC=1C(C)OCC1CO1 WZPIYCSDWSSKRZ-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- UIDOBPKYBOEMIM-UHFFFAOYSA-N 2-[2-(2-methylpropylamino)-2-oxoethyl]-5-trimethoxysilylpentanoic acid Chemical compound C(C(C)C)NC(CC(C(=O)O)CCC[Si](OC)(OC)OC)=O UIDOBPKYBOEMIM-UHFFFAOYSA-N 0.000 description 1
- BXXFCTMAQXSXFO-UHFFFAOYSA-N 2-[2-(4-ethenylphenyl)-1-[2-(4-ethenylphenyl)-1-(oxiran-2-yl)propoxy]propyl]oxirane Chemical compound C=1C=C(C=C)C=CC=1C(C)C(C1OC1)OC(C1OC1)C(C)C1=CC=C(C=C)C=C1 BXXFCTMAQXSXFO-UHFFFAOYSA-N 0.000 description 1
- HAYNUVDNIVEAJO-UHFFFAOYSA-N 2-[2-(tert-butylamino)-2-oxoethyl]-5-trimethoxysilylpentanoic acid Chemical compound C(C)(C)(C)NC(CC(C(=O)O)CCC[Si](OC)(OC)OC)=O HAYNUVDNIVEAJO-UHFFFAOYSA-N 0.000 description 1
- XEWRMLCETSBBCQ-UHFFFAOYSA-N 2-[2-oxo-2-(propylamino)ethyl]-5-trimethoxysilylpentanoic acid Chemical compound O=C(CC(C(=O)O)CCC[Si](OC)(OC)OC)NCCC XEWRMLCETSBBCQ-UHFFFAOYSA-N 0.000 description 1
- VCYCUECVHJJFIQ-UHFFFAOYSA-N 2-[3-(benzotriazol-2-yl)-4-hydroxyphenyl]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 VCYCUECVHJJFIQ-UHFFFAOYSA-N 0.000 description 1
- YCPMSWJCWKUXRH-UHFFFAOYSA-N 2-[4-[9-[4-(2-prop-2-enoyloxyethoxy)phenyl]fluoren-9-yl]phenoxy]ethyl prop-2-enoate Chemical compound C1=CC(OCCOC(=O)C=C)=CC=C1C1(C=2C=CC(OCCOC(=O)C=C)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 YCPMSWJCWKUXRH-UHFFFAOYSA-N 0.000 description 1
- BWONDYSHSJIGBM-UHFFFAOYSA-N 2-[[2-ethenyl-3,5-bis(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1=C(COCC2OC2)C=C(COCC2OC2)C(C=C)=C1COCC1CO1 BWONDYSHSJIGBM-UHFFFAOYSA-N 0.000 description 1
- DZYCUUFNXNXWBU-UHFFFAOYSA-N 2-[[2-ethenyl-3,6-bis(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1=CC(COCC2OC2)=C(COCC2OC2)C(C=C)=C1COCC1CO1 DZYCUUFNXNXWBU-UHFFFAOYSA-N 0.000 description 1
- NAHOABUATCSPEQ-UHFFFAOYSA-N 2-[[2-ethenyl-3-(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1=CC=C(COCC2OC2)C(C=C)=C1COCC1CO1 NAHOABUATCSPEQ-UHFFFAOYSA-N 0.000 description 1
- NCEFSFLKLRMYOL-UHFFFAOYSA-N 2-[[2-ethenyl-4,6-bis(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C=1C(COCC2OC2)=C(COCC2OC2)C(C=C)=CC=1COCC1CO1 NCEFSFLKLRMYOL-UHFFFAOYSA-N 0.000 description 1
- LOXIWIOCGARHCY-UHFFFAOYSA-N 2-[[2-ethenyl-4-(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C=1C=C(COCC2OC2)C(C=C)=CC=1COCC1CO1 LOXIWIOCGARHCY-UHFFFAOYSA-N 0.000 description 1
- DMAFESHBEJJZMF-UHFFFAOYSA-N 2-[[2-ethenyl-5-(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1=C(COCC2OC2)C(C=C)=CC=C1COCC1CO1 DMAFESHBEJJZMF-UHFFFAOYSA-N 0.000 description 1
- RPZQXXDQOBDBGO-UHFFFAOYSA-N 2-[[2-ethenyl-6-(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1OC1COCC=1C(C=C)=CC=CC=1COCC1CO1 RPZQXXDQOBDBGO-UHFFFAOYSA-N 0.000 description 1
- JHLMJWVEODHXFB-UHFFFAOYSA-N 2-[[3-ethenyl-2,6-bis(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1OC1COCC1=C(COCC2OC2)C(C=C)=CC=C1COCC1CO1 JHLMJWVEODHXFB-UHFFFAOYSA-N 0.000 description 1
- HBJKAXHCQPNZBZ-UHFFFAOYSA-N 2-[[4-ethenyl-2,6-bis(oxiran-2-ylmethoxymethyl)phenyl]methoxymethyl]oxirane Chemical compound C1OC1COCC=1C(COCC2OC2)=CC(C=C)=CC=1COCC1CO1 HBJKAXHCQPNZBZ-UHFFFAOYSA-N 0.000 description 1
- MEOUGBCVAWNDPJ-UHFFFAOYSA-N 2-benzofuran-1,3-dione;2-methyloxirane Chemical compound CC1CO1.C1=CC=C2C(=O)OC(=O)C2=C1 MEOUGBCVAWNDPJ-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- 229940013085 2-diethylaminoethanol Drugs 0.000 description 1
- GELMWIVBBPAMIO-UHFFFAOYSA-N 2-methylbutan-2-amine Chemical compound CCC(C)(C)N GELMWIVBBPAMIO-UHFFFAOYSA-N 0.000 description 1
- MWDGNKGKLOBESZ-UHFFFAOYSA-N 2-oxooctanal Chemical compound CCCCCCC(=O)C=O MWDGNKGKLOBESZ-UHFFFAOYSA-N 0.000 description 1
- JPEIGKQUFGYBSU-UHFFFAOYSA-N 3-(2-methylpropylcarbamoyl)-6-trimethoxysilylhexanoic acid Chemical compound C(C(C)C)NC(=O)C(CC(=O)O)CCC[Si](OC)(OC)OC JPEIGKQUFGYBSU-UHFFFAOYSA-N 0.000 description 1
- JRGQKLFZSNYTDX-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)CCCOCC1CO1 JRGQKLFZSNYTDX-UHFFFAOYSA-N 0.000 description 1
- DAJFVZRDKCROQC-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propyl-tripropoxysilane Chemical compound CCCO[Si](OCCC)(OCCC)CCCOCC1CO1 DAJFVZRDKCROQC-UHFFFAOYSA-N 0.000 description 1
- NTKBNCABAMQDIG-UHFFFAOYSA-N 3-butoxypropan-1-ol Chemical compound CCCCOCCCO NTKBNCABAMQDIG-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- IOSONAGXTXMCDY-UHFFFAOYSA-N 4-(benzylsulfanylmethyl)phenol Chemical compound C1=CC(O)=CC=C1CSCC1=CC=CC=C1 IOSONAGXTXMCDY-UHFFFAOYSA-N 0.000 description 1
- VVSRECWZBBJOTG-UHFFFAOYSA-N 4-Hydroxy-3-methyl-2-butanone Chemical compound OCC(C)C(C)=O VVSRECWZBBJOTG-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- STCQADFDVULNEN-UHFFFAOYSA-N 4-[(2-methylphenyl)methylsulfanylmethyl]phenol Chemical compound CC1=CC=CC=C1CSCC1=CC=C(O)C=C1 STCQADFDVULNEN-UHFFFAOYSA-N 0.000 description 1
- KOIXTNPKJXMOMW-UHFFFAOYSA-N 4-ethoxy-4-oxo-2-trimethoxysilylbutanoic acid Chemical compound C(C)OC(CC(C(=O)O)[Si](OC)(OC)OC)=O KOIXTNPKJXMOMW-UHFFFAOYSA-N 0.000 description 1
- JSHPTIGHEWEXRW-UHFFFAOYSA-N 5-hydroxypentan-2-one Chemical compound CC(=O)CCCO JSHPTIGHEWEXRW-UHFFFAOYSA-N 0.000 description 1
- OKIDBAXESNNOLZ-UHFFFAOYSA-N 7-[2-(tert-butylcarbamoyl)-4-(2-trimethoxysilylethyl)cyclohexyl]heptanoic acid Chemical compound CC(C)(C)NC(=O)C1CC(CCC1CCCCCCC(=O)O)CC[Si](OC)(OC)OC OKIDBAXESNNOLZ-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- LVUDWRFBOPCJHC-UHFFFAOYSA-N C(C)(C)(C)N1C(C(CC1=O)[Si](OC)(OC)OC)=O Chemical compound C(C)(C)(C)N1C(C(CC1=O)[Si](OC)(OC)OC)=O LVUDWRFBOPCJHC-UHFFFAOYSA-N 0.000 description 1
- OQJZNTGVKQBTQX-UHFFFAOYSA-N C1(=CC=CC=C1)NC(CC(C(=O)O)CCC[Si](OC)(OC)OC)=O Chemical compound C1(=CC=CC=C1)NC(CC(C(=O)O)CCC[Si](OC)(OC)OC)=O OQJZNTGVKQBTQX-UHFFFAOYSA-N 0.000 description 1
- SXNICUVVDOTUPD-UHFFFAOYSA-N CC1=CC(C)=CC(C)=C1C(=O)P(=O)C1=CC=CC=C1 Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)C1=CC=CC=C1 SXNICUVVDOTUPD-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- QEVVJXPFTSXXKM-UHFFFAOYSA-N N-tert-butyl-4-(2-trimethoxysilylbutyl)cyclohexane-1-carboxamide Chemical compound C(C)(C)(C)NC(=O)C1CCC(CC1)CC(CC)[Si](OC)(OC)OC QEVVJXPFTSXXKM-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- WYWZRNAHINYAEF-UHFFFAOYSA-N Padimate O Chemical compound CCCCC(CC)COC(=O)C1=CC=C(N(C)C)C=C1 WYWZRNAHINYAEF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- LFOXEOLGJPJZAA-UHFFFAOYSA-N [(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)phosphoryl]-(2,6-dimethoxyphenyl)methanone Chemical compound COC1=CC=CC(OC)=C1C(=O)P(=O)(CC(C)CC(C)(C)C)C(=O)C1=C(OC)C=CC=C1OC LFOXEOLGJPJZAA-UHFFFAOYSA-N 0.000 description 1
- SEEVRZDUPHZSOX-UHFFFAOYSA-N [1-[9-ethyl-6-(2-methylbenzoyl)carbazol-3-yl]ethylideneamino] acetate Chemical compound C=1C=C2N(CC)C3=CC=C(C(C)=NOC(C)=O)C=C3C2=CC=1C(=O)C1=CC=CC=C1C SEEVRZDUPHZSOX-UHFFFAOYSA-N 0.000 description 1
- BRHJUILQKFBMTL-UHFFFAOYSA-N [4,4-bis(dimethylamino)cyclohexa-1,5-dien-1-yl]-phenylmethanone Chemical compound C1=CC(N(C)C)(N(C)C)CC=C1C(=O)C1=CC=CC=C1 BRHJUILQKFBMTL-UHFFFAOYSA-N 0.000 description 1
- VFXVSCAZEBOMCW-UHFFFAOYSA-N [4-[(2-methylphenyl)methylsulfanylmethyl]phenyl] benzoate Chemical compound CC1=CC=CC=C1CSCC(C=C1)=CC=C1OC(=O)C1=CC=CC=C1 VFXVSCAZEBOMCW-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- HFLZEANEEYUWOE-UHFFFAOYSA-N anthracen-1-yl(trimethoxy)silane Chemical compound C1=CC=C2C=C3C([Si](OC)(OC)OC)=CC=CC3=CC2=C1 HFLZEANEEYUWOE-UHFFFAOYSA-N 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 125000000707 boryl group Chemical group B* 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- MIOPJNTWMNEORI-UHFFFAOYSA-N camphorsulfonic acid Chemical class C1CC2(CS(O)(=O)=O)C(=O)CC1C2(C)C MIOPJNTWMNEORI-UHFFFAOYSA-N 0.000 description 1
- JJFFNQSUUAIWHB-UHFFFAOYSA-N carbamic acid;prop-2-enoic acid Chemical compound NC(O)=O.OC(=O)C=C JJFFNQSUUAIWHB-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XPKFLEVLLPKCIW-UHFFFAOYSA-N ethyl 4-(diethylamino)benzoate Chemical compound CCOC(=O)C1=CC=C(N(CC)CC)C=C1 XPKFLEVLLPKCIW-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- WPEOOEIAIFABQP-UHFFFAOYSA-N hexanedioic acid;hexane-1,6-diol Chemical compound OCCCCCCO.OC(=O)CCCCC(O)=O WPEOOEIAIFABQP-UHFFFAOYSA-N 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- XLSMFKSTNGKWQX-UHFFFAOYSA-N hydroxyacetone Chemical compound CC(=O)CO XLSMFKSTNGKWQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-M methanesulfonate group Chemical class CS(=O)(=O)[O-] AFVFQIVMOAPDHO-UHFFFAOYSA-M 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- QMYDVDBERNLWKB-UHFFFAOYSA-N propane-1,2-diol;hydrate Chemical compound O.CC(O)CO QMYDVDBERNLWKB-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 125000006318 tert-butyl amino group Chemical group [H]N(*)C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical class CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- FQYWWLSIKWDAEC-UHFFFAOYSA-N tributoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCOCC1CO1 FQYWWLSIKWDAEC-UHFFFAOYSA-N 0.000 description 1
- ZLGWXNBXAXOQBG-UHFFFAOYSA-N triethoxy(3,3,3-trifluoropropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)F ZLGWXNBXAXOQBG-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- UNKMHLWJZHLPPM-UHFFFAOYSA-N triethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1CO1 UNKMHLWJZHLPPM-UHFFFAOYSA-N 0.000 description 1
- BOVWGKNFLVZRDU-UHFFFAOYSA-N triethoxy(trifluoromethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(F)(F)F BOVWGKNFLVZRDU-UHFFFAOYSA-N 0.000 description 1
- OHKFEBYBHZXHMM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CCC)OCC1CO1 OHKFEBYBHZXHMM-UHFFFAOYSA-N 0.000 description 1
- SJQPASOTJGFOMU-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)C(C)OCC1CO1 SJQPASOTJGFOMU-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- FVMMYGUCXRZVPJ-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(CC)OCC1CO1 FVMMYGUCXRZVPJ-UHFFFAOYSA-N 0.000 description 1
- RWJUTPORTOUFDY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)CCOCC1CO1 RWJUTPORTOUFDY-UHFFFAOYSA-N 0.000 description 1
- CFUDQABJYSJIQY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(C)OCC1CO1 CFUDQABJYSJIQY-UHFFFAOYSA-N 0.000 description 1
- NLKPPXKQMJDBFO-UHFFFAOYSA-N triethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OCC)(OCC)OCC)CCC2OC21 NLKPPXKQMJDBFO-UHFFFAOYSA-N 0.000 description 1
- KPNCYSTUWLXFOE-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCC(C)OCC1CO1 KPNCYSTUWLXFOE-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- PSUKBUSXHYKMLU-UHFFFAOYSA-N triethoxy-[4-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(CCCC[Si](OCC)(OCC)OCC)CCC2OC21 PSUKBUSXHYKMLU-UHFFFAOYSA-N 0.000 description 1
- GSUGNQKJVLXBHC-UHFFFAOYSA-N triethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCCOCC1CO1 GSUGNQKJVLXBHC-UHFFFAOYSA-N 0.000 description 1
- 125000002827 triflate group Chemical class FC(S(=O)(=O)O*)(F)F 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- LFBULLRGNLZJAF-UHFFFAOYSA-N trimethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](OC)(OC)COCC1CO1 LFBULLRGNLZJAF-UHFFFAOYSA-N 0.000 description 1
- ORVBHOQTQDOUIW-UHFFFAOYSA-N trimethoxy(trifluoromethyl)silane Chemical compound CO[Si](OC)(OC)C(F)(F)F ORVBHOQTQDOUIW-UHFFFAOYSA-N 0.000 description 1
- FFJVMNHOSKMOSA-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCCC([Si](OC)(OC)OC)OCC1CO1 FFJVMNHOSKMOSA-UHFFFAOYSA-N 0.000 description 1
- DAVVOFDYOGMLNQ-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)C(C)OCC1CO1 DAVVOFDYOGMLNQ-UHFFFAOYSA-N 0.000 description 1
- FNBIAJGPJUOAPB-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)C(CC)OCC1CO1 FNBIAJGPJUOAPB-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- KKFKPRKYSBTUDV-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CC(CC)OCC1CO1 KKFKPRKYSBTUDV-UHFFFAOYSA-N 0.000 description 1
- ZNXDCSVNCSSUNB-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)CCOCC1CO1 ZNXDCSVNCSSUNB-UHFFFAOYSA-N 0.000 description 1
- HTVULPNMIHOVRU-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CC(C)OCC1CO1 HTVULPNMIHOVRU-UHFFFAOYSA-N 0.000 description 1
- DBUFXGVMAMMWSD-UHFFFAOYSA-N trimethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OC)(OC)OC)CCC2OC21 DBUFXGVMAMMWSD-UHFFFAOYSA-N 0.000 description 1
- ZQPNGHDNBNMPON-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCC(C)OCC1CO1 ZQPNGHDNBNMPON-UHFFFAOYSA-N 0.000 description 1
- ZOWVSEMGATXETK-UHFFFAOYSA-N trimethoxy-[4-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(CCCC[Si](OC)(OC)OC)CCC2OC21 ZOWVSEMGATXETK-UHFFFAOYSA-N 0.000 description 1
- GUKYSRVOOIKHHB-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCOCC1CO1 GUKYSRVOOIKHHB-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G02B1/105—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
본 발명은 일반식(1)으로 나타내어지는 실란커플링제이다. 본 발명에 의해 금속이나 무기물로 구성되는 기판 표면과의 접착성 개선이 우수한 실란커플링제 및 그것을 사용한 조성물을 제공할 수 있다(각 R1은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기를 나타낸다. 알킬기는 치환기를 더 갖고 있어도 된다. n은 0 또는 1을 나타낸다. R2는 탄소수 3~30인 3가의 유기기를 나타낸다. R3은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기, 탄소수 1~6인 알콕시기, 페닐기, 히드록실기 및 페녹시기를 나타낸다. 또한, R3의 이들 기 중 히드록실기 이외에는 치환기를 더 갖고 있어도 된다).
This invention is a silane coupling agent represented by General formula (1). It is possible to provide the adhesion improving composition used agent and it excellent silane coupling to the substrate surface consisting of a metal or inorganic substance by the present invention (each of R 1 are different be the same and represents the carbon number of the alkyl group having 1 to 6 The alkyl group may further have a substituent, n represents 0 or 1. R 2 represents a trivalent organic group having 3 to 30 carbon atoms, R 3 may be the same or different, and an alkyl group having 1 to 6 carbon atoms, or 1 carbon atom. And an alkoxy group, a phenyl group, a hydroxyl group and a phenoxy group which are ˜ 6. In addition, among these groups of R 3, the substituent may further have a substituent).
Description
본 발명은 액정 표시 소자나 유기 EL 표시 소자 등의 박막 트랜지스터(TFT) 기판용 평탄화막, 터치 패널 센서 소자 등의 보호막이나 절연막, 반도체 소자의 층간 절연막을 형성하기 위한 수지 조성물에 적합한 실란커플링제에 관한 것이다. 또한, 그것을 사용한 네거티브형 감광성 조성물, 그것으로부터 형성된 경화막, 및 그 경화막을 갖는 터치 패널용 부재에 관한 것이다.The present invention relates to a silane coupling agent suitable for a resin composition for forming a protective film or insulating film for a thin film transistor (TFT) substrate such as a liquid crystal display device or an organic EL display device, a touch panel sensor element, or an interlayer insulating film for a semiconductor device. It is about. Moreover, it is related with the negative photosensitive composition using the same, the cured film formed from it, and the member for touch panels which have this cured film.
현재, 하드 코팅 재료의 용도는 다방면에 걸친다. 예를 들면, 자동차 부품, 화장품 등의 용기, 시트, 필름, 광학 디스크, 박형 디스플레이 등의 표면 경도 향상에 사용되고 있다. 하드 코팅 재료에 요구되는 특성으로서는 경도, 내찰상성 이외에 내열성, 내후성, 접착성 등을 들 수 있다. 하드 코팅 재료의 대표예로서는 라디칼 중합형의 UV 경화형 하드 코팅 재료가 있다(예를 들면, 비특허문헌 1 참조). 하드 코팅 재료의 구성은 중합성 기 함유 올리고머, 모노머, 광중합 개시제 및 기타 첨가제이다.Currently, the use of hard coating materials is versatile. For example, it is used for surface hardness improvement of containers, such as automobile parts and cosmetics, sheets, a film, an optical disk, and a thin display. Examples of the properties required for the hard coat material include heat resistance, weather resistance, adhesiveness, and the like, in addition to hardness and scratch resistance. Representative examples of the hard coating material include a radical polymerization type UV curable hard coating material (see Non-Patent Document 1, for example). The construction of the hard coating material is a polymerizable group containing oligomer, monomers, photopolymerization initiators and other additives.
UV 조사에 의해 올리고머 및 모노머가 라디칼 중합함으로써 가교하여 고경도의 막을 얻는다. 이 하드 코팅 재료는 경화에 필요한 시간이 짧기 때문에 이것을 사용하면 생산성이 향상된다. 또한, 일반적인 라디칼 중합 기구에 의한 네거티브형 감광성 재료를 사용할 수 있기 때문에 제조 비용이 저렴해진다는 이점을 가진다.The oligomer and monomer are crosslinked by radical polymerization by UV irradiation to obtain a film of high hardness. Since this hard coating material requires a short time for hardening, using this improves productivity. Moreover, since the negative photosensitive material by a general radical polymerization mechanism can be used, it has the advantage that manufacturing cost becomes low.
최근 주목을 받고 있는 정전용량식 터치 패널은 하드 코팅 재료의 용도 중 하나이다. 정전용량식 터치 패널은 유리 상에 ITO(Indium Tin Oxide)막으로 제작한 패턴을 갖는다. 이 ITO를 보호하기 위해서 높은 경도를 갖는 막이 요구된다. 그러나, 높은 경도와 ITO에의 양호한 접착성을 양립시키는 것은 곤란하여 이 문제를 해결하는 하드 코팅 재료가 요구되고 있었다.Capacitive touch panels, which are recently attracting attention, are one of the uses of hard coating materials. The capacitive touch panel has a pattern made of an indium tin oxide (ITO) film on glass. In order to protect this ITO, a film with high hardness is required. However, it is difficult to achieve both high hardness and good adhesion to ITO, and a hard coating material has been required to solve this problem.
접착성을 개선하는 방법으로서는 실란커플링제를 첨가하는 방법이 잘 알려져 있다. 예를 들면, 실란커플링제로서 이미드기를 갖는 실란커플링제(특허문헌 1 및 특허문헌 2 참조)가 제안되어 있다. 이들 문헌에 있어서는 양호한 평탄성을 가진 채 밀착성을 향상시키기 위해서 아미드산 구조가 아니라 이미드기를 갖는 화합물을 사용하는 것이 추장되고 있다. 또한, 내열성 수지 전구체 조성물에 적합한 실란커플링제로서 카르복실기와 에스테르기, 또는 카르복실기와 아미드기를 갖는 화합물(특허문헌 3 참조)이 제안되어 있다.As a method of improving adhesiveness, the method of adding a silane coupling agent is well known. For example, the silane coupling agent (refer patent document 1 and patent document 2) which has an imide group as a silane coupling agent is proposed. In these documents, in order to improve adhesiveness with favorable flatness, it is recommended to use the compound which has imide group instead of an amic acid structure. Moreover, the compound (refer patent document 3) which has a carboxyl group and ester group, or a carboxyl group and an amide group is proposed as a silane coupling agent suitable for a heat resistant resin precursor composition.
그러나, 어떤 실란커플링제도 터치 패널용 하드 코팅제로서 사용했을 경우에는 접착성 개량 효과가 충분하지 않았다.However, when any silane coupling agent was used as the hard coating agent for the touch panel, the effect of improving the adhesion was not sufficient.
또한, 폴리이미드 수지 조성물에 아미드산 구조를 갖는 유기 규소 화합물을 첨가하는 것(특허문헌 4)도 제안되어 있다. 그러나, 이 유기 규소 화합물은 방향족환의 무수화물에 아미노기 함유 실란커플링제가 부가된 구조를 하고 있다. 이 유기 규소 화합물은 착색이 강하여 터치 패널 용도에는 알맞지 않고 접착성 개량 경화도 충분하지 않다.Moreover, adding the organosilicon compound which has an amic acid structure to a polyimide resin composition is also proposed (patent document 4). However, this organosilicon compound has the structure which the amino group containing silane coupling agent added to the anhydride of an aromatic ring. This organosilicon compound is strongly colored and is not suitable for use in touch panels, and is not sufficient in adhesive improvement curing.
본 발명의 과제는 금속이나 무기물로 구성되는 기판 표면과의 접착성이 뛰어나고, 경도가 높으며, 해상도가 우수한 경화막을 제공하는 것이다. 또한, 본 발명의 다른 과제는 경화 수축률이 낮고, 평탄성이 양호한 경화막을 제공하는 것이다.An object of the present invention is to provide a cured film that is excellent in adhesion to a substrate surface composed of a metal or an inorganic substance, has high hardness, and is excellent in resolution. Moreover, another subject of this invention is providing the cured film with low cure shrinkage rate and favorable flatness.
상기 과제를 해결하기 위해서 본 발명은 이하의 구성으로 이루어진다.MEANS TO SOLVE THE PROBLEM In order to solve the said subject, this invention consists of the following structures.
즉, 하기 일반식(1)으로 나타내어지는 실란커플링제이다.
That is, it is a silane coupling agent represented by following General formula (1).
(각 R1은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기를 나타낸다.알킬기는 치환기를 더 갖고 있어도 된다. n은 0 또는 1을 나타낸다. R2는 탄소수 3~30인 3가의 유기기를 나타낸다. R3은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기, 탄소수 1~6인 알콕시기, 페닐기, 히드록실기 및 페녹시기를 나타낸다. 또한, R3의 이들 기 중 히드록실기 이외에는 치환기를 더 갖고 있어도 된다)(Each R 1 may be the same as or different from each other and represents an alkyl group having 1 to 6 carbon atoms. The alkyl group may further have a substituent. N represents 0 or 1. R 2 represents a trivalent organic group having 3 to 30 carbon atoms. . R 3 are each gatahdo and are different, and having 1 to 6 carbon atoms in the alkyl group, having 1 to 6 represents an alkoxy group, a phenyl group, a hydroxyl group and a phenoxy group. in addition, the hydroxide of which group of the R 3 hydroxyl groups other than the substituent You may have more)
(발명의 효과)(Effects of the Invention)
본 발명의 실란커플링제를 함유하는 경화막은 금속이나 무기물로 구성되는 기판 표면과의 접착성 개선에 뛰어나고, 경도가 높으며, 해상도가 우수하다는 효과를 갖는다. 또한, 본 발명의 실란커플링제를 함유하는 경화막은 경화 수축률이 낮고, 평탄성이 양호하다는 효과도 갖는다.The cured film containing the silane coupling agent of this invention is excellent in the adhesive improvement with the surface of the board | substrate which consists of a metal or an inorganic substance, has the effect of high hardness, and excellent resolution. Moreover, the cured film containing the silane coupling agent of this invention has the effect of low hardening shrinkage rate, and favorable flatness.
본 발명의 실란커플링제는 하기 일반식(1)으로 나타내어지는 구조를 갖고 있다.The silane coupling agent of this invention has a structure represented by following General formula (1).
(각 R1은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기를 나타낸다. 알킬기는 치환기를 더 갖고 있어도 된다. n은 0 또는 1을 나타낸다. R2는 탄소수 3~30인 3가의 유기기를 나타낸다. R3은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기, 탄소수 1~6인 알콕시기, 페닐기, 히드록실기 및 페녹시기를 나타낸다. 또한, R3의 이들 기 중 히드록실기 이외에는 치환기를 더 갖고 있어도 된다)(Each R 1 may be the same as or different from each other, and represents an alkyl group having 1 to 6 carbon atoms. The alkyl group may further have a substituent. N represents 0 or 1. R 2 represents a trivalent organic group having 3 to 30 carbon atoms. . R 3 are each gatahdo and are different, and having 1 to 6 carbon atoms in the alkyl group, having 1 to 6 represents an alkoxy group, a phenyl group, a hydroxyl group and a phenoxy group. in addition, the hydroxide of which group of the R 3 hydroxyl groups other than the substituent You may have more)
여기에서 R1로서는 메틸기, 에틸기, 부틸기가 바람직하고, 특히 원료 입수의 점에서 메틸기, 에틸기가 바람직하다. R1은 알콕시기, 아릴기, 페녹시기, 할로겐기 등의 치환기를 갖고 있어도 된다. R2로서는 탄소수 3~30인 3가의 유기기가 바람직하고, 유기 용제에의 용해성의 점에서는 탄소수 3~10인 3가의 유기기가 보다 바람직하다.As R <1> , a methyl group, an ethyl group, and a butyl group are preferable here, and a methyl group and an ethyl group are especially preferable at the point of a raw material acquisition. R 1 may have substituents such as an alkoxy group, an aryl group, a phenoxy group, and a halogen group. As R 2 , a trivalent organic group having 3 to 30 carbon atoms is preferable, and a trivalent organic group having 3 to 10 carbon atoms is more preferable in terms of solubility in an organic solvent.
본 발명의 일반식(1)으로 나타내어지는 실란커플링제로서는 예를 들면, 3-(tert-부틸카르바모일)-6-(트리메톡시실릴)헥산산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(이소프로필카르바모일)-6-(트리메톡시실릴)헥산산, 2-(2-(이소프로필아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(이소부틸카르바모일)-6-(트리메톡시실릴)헥산산, 2-(2-(이소부틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(tert-펜틸카르바모일)-6-(트리메톡시실릴)헥산산, 2-(2-(tert-펜틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(tert-부틸카르바모일)-6-(트리에톡시실릴)헥산산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리에톡시실릴)펜탄산, 6-(디메톡시(메틸)실릴)-3-(tert-부틸카르바모일)헥산산, 5-(디메톡시(메틸)실릴-2-(2-(tert-부틸아미노)-2-옥소에틸)펜탄산, 3-(tert-부틸카르바모일)-6-(트리메톡시실릴)펜탄산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)부탄산, 2-(tert-부틸카르바모일)-4-(2-(트리메톡시실릴)에틸)시클로헥산카르복실산, 2-(tert-부틸카르바모일)-5-(2-(트리메톡시실릴)에틸)시클로헥산카르복실산 등을 들 수 있다.As the silane coupling agent represented by the general formula (1) of the present invention, for example, 3- (tert-butylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- (2- (tert-butyl) Amino) -2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid, 3- (isopropylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- (2- (isopropylamino ) -2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid, 3- (isobutylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- (2- (isobutylamino) 2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid, 3- (tert-pentylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- (2- (tert-pentylamino ) -2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid, 3- (tert-butylcarbamoyl) -6- (triethoxysilyl) hexanoic acid, 2- (2- (tert-butyl Amino) -2-oxoethyl) -5- (triethoxysilyl) pentanoic acid, 6- (dimethoxy (methyl) silyl) -3- (tert-butylcarbamoyl) hexanoic acid, 5- (dimethoxy ( Methyl) silyl-2- (2- (tert-butylamino) -2-oxoethyl) pentanoic acid, 3- (t ert-butylcarbamoyl) -6- (trimethoxysilyl) pentanoic acid, 2- (2- (tert-butylamino) -2-oxoethyl) -5- (trimethoxysilyl) butanoic acid, 2- (tert-butylcarbamoyl) -4- (2- (trimethoxysilyl) ethyl) cyclohexanecarboxylic acid, 2- (tert-butylcarbamoyl) -5- (2- (trimethoxysilyl) Ethyl) cyclohexanecarboxylic acid, and the like.
이들 중에서도 특히, 상기 일반식(1)에 있어서 n=0인 화합물이 ITO 접착성 향상의 효과가 높아지는 점에서 바람직하다.Among these, especially the compound whose n = 0 in the said General formula (1) is preferable at the point which the effect of improving ITO adhesiveness becomes high.
구체적으로는 3-(tert-부틸카르바모일)-6-(트리메톡시실릴)헥산산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(이소프로필카르바모일)-6-(트리메톡시실릴)헥산산, 3-(tert-펜틸카르바모일)-6-(트리메톡시실릴)헥산 산, 2-(2-(tert-펜틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(tert-부틸카르바모일)-6-(트리에톡시실릴)헥산산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리에톡시실릴)펜탄산, 6-(디메톡시(메틸)실릴)-3-(tert-부틸카르바모일)헥산산, 5-(디메톡시(메틸)실릴-2-(2-(tert-부틸아미노)-2-옥소에틸)펜탄산, 3-(tert-부틸카르바모일)-6-(트리메톡시실릴)펜탄산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)부탄산, 2-(tert-부틸카르바모일)-4-(2-(트리메톡시실릴)에틸)시클로헥산헥산카르복실산, 2-(tert-부틸카르바모일)-5-(2-(트리메톡시실릴)에틸)시클로헥산헥산카르복실산이 해당된다.Specifically 3- (tert-butylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- (2- (tert-butylamino) -2-oxoethyl) -5- (trimethoxysilyl ) Pentanoic acid, 3- (isopropylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 3- (tert-pentylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- ( 2- (tert-pentylamino) -2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid, 3- (tert-butylcarbamoyl) -6- (triethoxysilyl) hexanoic acid, 2- (2- (tert-butylamino) -2-oxoethyl) -5- (triethoxysilyl) pentanoic acid, 6- (dimethoxy (methyl) silyl) -3- (tert-butylcarbamoyl) hexanoic acid , 5- (dimethoxy (methyl) silyl-2- (2- (tert-butylamino) -2-oxoethyl) pentanoic acid, 3- (tert-butylcarbamoyl) -6- (trimethoxysilyl) Pentanic acid, 2- (2- (tert-butylamino) -2-oxoethyl) -5- (trimethoxysilyl) butanoic acid, 2- (tert-butylcarbamoyl) -4- (2- (tri Methoxysilyl) ethyl) cyclohexanehexanecarboxylic acid, 2- (tert-butylcarbamoyl) -5- (2- (trimethoxysilyl) Butyl) cyclohexane, hexane carboxylic acid is appropriate.
이들 실란커플링제를 네거티브형 감광성 수지에 첨가할 때는 단독으로 사용해도 되고, 혼합해도 된다.When adding these silane coupling agents to negative photosensitive resin, you may use individually and may mix.
이들 실란커플링제의 제조 방법으로서는 산무수물을 함유하는 실란커플링제와 알킬아민의 반응에 의해 제조하는 방법이 제조의 용이함에서 바람직하다. 이 경우, 산무수물을 함유하는 실란커플링제의 구조에 따라서는 본 발명의 실란커플링제가 2종류 동시에 생성된다. 그러나, 특별히 이것들을 분리, 정제하지 않고 혼합체로서 사용하는 것이 가능하다. 또한, 이 합성 방법에서는 소량의 올리고머 등의 복제도 고려되지만 밀착성 개량 효과에 크게 영향을 미치는 것이 아니어서 고려할 필요는 없다.As a manufacturing method of these silane coupling agents, the method of manufacturing by reaction of the silane coupling agent containing an acid anhydride, and an alkylamine is preferable at the ease of manufacture. In this case, depending on the structure of the silane coupling agent containing an acid anhydride, two types of silane coupling agents of this invention are produced | generated simultaneously. However, it is possible to use them as a mixture particularly without separating and purifying them. In addition, although replication of a small amount of oligomers or the like is considered in this synthesis method, it does not need to be considered because it does not greatly affect the effect of improving adhesion.
첨가량으로서는 네거티브형 감광성 수지 조성물의 수지 성분, 즉 (B) 알칼리 가용성 수지 및 (C) 다관능 아크릴 모노머의 합계량에 대하여 1~15질량%가 바람직하고, 3~10질량%가 보다 바람직하다. 1질량%보다 적으면 접착성 개량 효과가 충분하지 않고, 15질량%보다 많으면 알칼리 현상에 있어서 미세한 패턴이 결락되고, 해상도가 저하되어버린다.As addition amount, 1-15 mass% is preferable with respect to the total amount of the resin component of a negative photosensitive resin composition, ie, (B) alkali-soluble resin and (C) polyfunctional acryl monomer, and 3-10 mass% is more preferable. When less than 1 mass%, the adhesive improvement effect is not enough, and when more than 15 mass%, a fine pattern falls out in alkali image development, and the resolution falls.
본 발명의 실란커플링제를 사용한 네거티브형 감광성 수지 조성물은 적어도 (A) 일반식(1)으로 나타내어지는 실란커플링제, (B) 알칼리 가용성 수지, (C) 다관능 아크릴 모노머, (D) 광라디칼 중합 개시제를 함유하는 것을 특징으로 한다.The negative photosensitive resin composition using the silane coupling agent of this invention is a silane coupling agent represented by at least (A) General formula (1), (B) alkali-soluble resin, (C) polyfunctional acryl monomer, (D) optical radical It is characterized by containing a polymerization initiator.
이하, 본 발명의 실란커플링제를 사용한 네거티브형 감광성 수지 조성물의 각 구성 성분에 대해서 설명한다.Hereinafter, each structural component of the negative photosensitive resin composition using the silane coupling agent of this invention is demonstrated.
본 발명의 네거티브형 감광성 조성물은 (B) 알칼리 가용성 수지를 함유한다. 알칼리 가용성 수지를 가짐으로써 네거티브형 감광성 수지 조성물의 알칼리 용해성(현상성)이 뛰어나 현상 후의 잔사를 억제하여 양호한 패턴을 형성할 수 있다. 또한, 에틸렌성 불포화 이중결합기를 가짐으로써 가교 밀도를 향상시켜 경화막의 경도를 향상시킬 수 있다.The negative photosensitive composition of this invention contains (B) alkali-soluble resin. By having alkali-soluble resin, it is excellent in alkali solubility (developability) of a negative photosensitive resin composition, can suppress the residue after image development, and can form a favorable pattern. Furthermore, by having an ethylenically unsaturated double bond group, crosslinking density can be improved and the hardness of a cured film can be improved.
(B) 알칼리 가용성 수지로서는 폴리실록산, 아크릴 수지, 비닐에테르 수지, 폴리히드록시스티렌, 노볼락 수지, 폴리이미드, 폴리아미드 등을 들 수 있다. (B) 알칼리 가용성 수지에 있어서는 적어도 일부에는 에틸렌성 불포화 이중결합기가 도입되어 있는 것이 경화막의 경도를 높게 하는데 바람직하다. 이들 중합체 중, 에틸렌성 불포화 이중결합기의 도입의 용이함으로부터 폴리실록산, 아크릴 수지가 보다 바람직하다. 또한, 이들 중합체를 2종 이상 함유해도 된다. (B) 알칼리 가용성 수지로서 바람직한 예를 이하에 들지만, 이것에 한정되지 않는다.(B) As alkali-soluble resin, polysiloxane, an acrylic resin, vinyl ether resin, polyhydroxy styrene, a novolak resin, polyimide, polyamide, etc. are mentioned. (B) In alkali-soluble resin, it is preferable to introduce an ethylenically unsaturated double bond group in at least one part in order to raise the hardness of a cured film. Among these polymers, polysiloxanes and acrylic resins are more preferable from the ease of introduction of ethylenically unsaturated double bond groups. Moreover, you may contain 2 or more types of these polymers. Although the example preferable as (B) alkali-soluble resin is given to the following, it is not limited to this.
폴리실록산으로서는 3관능성 알콕시실란 화합물을 가수분해·축합반응시켜 얻어지는 반응 생성물이 특히 바람직하다. 3관능성 알콕시실란 화합물로서는 이하의 것을 들 수 있다.As polysiloxane, the reaction product obtained by hydrolyzing and condensing a trifunctional alkoxysilane compound is especially preferable. The following are mentioned as a trifunctional alkoxysilane compound.
예를 들면, 메틸트리메톡시실란, 메틸트리에톡시실란, 에틸트리메톡시실란, 에틸트리에톡시실란, 헥실트리메톡시실란, 옥타데실트리메톡시실란, 페닐트리메톡시실란, 페닐트리에톡시실란, 나프틸트리메톡시실란, 안트라세닐트리메톡시실란, 3-아미노프로필트리에톡시실란, N-(2-아미노에틸)-3-아미노프로필트리메톡시실란, 3-(N,N-디글리시딜)아미노프로필트리메톡시실란, 3-글리시독시시프로필트리메톡시실란, 글리시독시메틸트리메톡시실란, 글리시독시메틸트리에톡시실란, α-글리시독시에틸트리메톡시실란, α-글리시독시에틸트리에톡시실란, β-글리시독시에틸트리메톡시실란, β-글리시독시에틸트리에톡시실란, α-글리시독시프로필트리메톡시실란, α-글리시독시프로필트리에톡시실란, β-글리시독시프로필트리메톡시실란, β-글리시독시프로필트리에톡시실란, γ-글리시독시프로필트리메톡시실란, γ-글리시독시프로필트리에톡시실란, γ-글리시독시프로필트리프로폭시시실란, γ-글리시독시프로필트리이소프로폭시시실란, γ-글리시독시프로필트리부톡시실란, α-글리시독시부틸트리메톡시실란, α-글리시독시부틸트리에톡시실란, β-글리시독시부틸트리메톡시실란, β-글리시독시부틸트리에톡시실란, γ-글리시독시부틸트리메톡시실란, γ-글리시독시부틸트리에톡시실란, δ-글리시독시부틸트리메톡시실란, δ-글리시독시부틸트리에톡시실란, (3,4-에폭시시클로헥실)메틸트리메톡시실란, (3,4-에폭시시클로헥실)메틸트리에톡시실란, (3,4-에폭시시클로헥실)메틸트리메톡시실란, (3,4-에폭시시클로헥실)메틸트리에톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리프로폭시실란, 2-(3,4-에폭시시클로헥실)에틸트리부톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리에톡시실란, 3-(3,4-에폭시시클로헥실)프로필트리메톡시실란, 3-(3,4-에폭시시클로헥실)프로필트리에톡시실란, 4-(3,4-에폭시시클로헥실)부틸트리메톡시실란, 4-(3,4-에폭시시클로헥실)부틸트리에톡시실란, 트리플루오로메틸트리메톡시실란, 트리플루오로메틸트리에톡시실란, 트리플루오로프로필트리메톡시실란, 트리플루오로프로필트리에톡시실란 등이다.For example, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, hexyltrimethoxysilane, octadecyltrimethoxysilane, phenyltrimethoxysilane and phenyltrier Methoxysilane, naphthyltrimethoxysilane, anthracenyltrimethoxysilane, 3-aminopropyltriethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3- (N, N- Diglycidyl) aminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, glycidoxymethyltrimethoxysilane, glycidoxymethyltriethoxysilane, α-glycidoxyethyltrimeth Oxysilane, α-glycidoxyethyltriethoxysilane, β-glycidoxyethyltrimethoxysilane, β-glycidoxyethyltriethoxysilane, α-glycidoxypropyltrimethoxysilane, α-gly Cydoxypropyltriethoxysilane, β-glycidoxypropyltrimethoxysilane, β-glycidoxypropyl Triethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltripropoxysilane, γ-glycidoxypropyltriisopropoxy Silane, γ-glycidoxypropyltributoxysilane, α-glycidoxy butyltrimethoxysilane, α-glycidoxy butyl triethoxysilane, β-glycidoxy butyltrimethoxysilane, β-glyci Doxybutyltriethoxysilane, γ-glycidoxybutyltrimethoxysilane, γ-glycidoxybutyltriethoxysilane, δ-glycidoxybutyltrimethoxysilane, δ-glycidoxybutyltriethoxysilane , (3,4-epoxycyclohexyl) methyltrimethoxysilane, (3,4-epoxycyclohexyl) methyltriethoxysilane, (3,4-epoxycyclohexyl) methyltrimethoxysilane, (3,4 -Epoxycyclohexyl) methyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltripropoxysilane, 2- (3,4-epoxycyclohexyl) Tyltributoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane, 3- (3,4-epoxycyclohexyl) Propyltrimethoxysilane, 3- (3,4-epoxycyclohexyl) propyltriethoxysilane, 4- (3,4-epoxycyclohexyl) butyltrimethoxysilane, 4- (3,4-epoxycyclohexyl ) Butyl triethoxysilane, trifluoromethyltrimethoxysilane, trifluoromethyltriethoxysilane, trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, and the like.
또한, 에틸렌성 불포화 이중결합기를 함유하는 3관능성 알콕시실란을 사용함으로써 폴리실록산에 에틸렌성 불포화 이중결합기를 용이하게 도입할 수 있고, 경화막의 경도를 높일 수 있기 때문에 보다 바람직하다.Furthermore, by using the trifunctional alkoxysilane containing an ethylenically unsaturated double bond group, since ethylenically unsaturated double bond group can be introduce | transduced into polysiloxane easily and the hardness of a cured film can be improved, it is more preferable.
구체적으로는 비닐트리메톡시실란, 비닐트리에톡시실란, γ-메타크릴옥시프로필트리메톡시실란, γ-메타크릴옥시프로필트리에톡시실란, γ-아크릴옥시프로필트리메톡시실란, γ-아크릴옥시프로필트리에톡시실란 등이다.Specifically, vinyltrimethoxysilane, vinyltriethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-acryloxypropyltrimethoxysilane and γ-acrylic Oxypropyltriethoxysilane and the like.
아크릴 수지로서는 (메타)아크릴산, (메타)아크릴산 에스테르를 라디칼 중합 한 것이 바람직하다. (메타)아크릴산 에스테르로서는 (메타)아크릴산 메틸, (메타)아크릴산 에틸, (메타)아크릴산 프로필, (메타)아크릴산 시클로프로필, (메타)아크릴산 시클로펜틸, (메타)아크릴산 시클로헥실, (메타)아크릴산 시클로헥세닐, (메타)아크릴산 4-메톡시시클로헥실, (메타)아크릴산 2-시클로프로필옥시카르보닐에틸, (메타)아크릴산 2-시클로펜틸옥시카르보닐에틸, (메타)아크릴산 2-시클로헥실옥시카르보닐에틸, (메타)아크릴산 2-시클로헥세닐옥시카르보닐에틸, (메타)아크릴산 2-(4-메톡시시클로헥실)옥시카르보닐에틸, (메타)아크릴산 노르보르닐, (메타)아크릴산 이소보르닐, (메타)아크릴산 트리시클로데카닐, (메타)아크릴산 테트라시클로데카닐, (메타)아크릴산 디시클로펜테닐, (메타)아크릴산 아다만틸, (메타)아크릴산 아다만틸메틸, (메타)아크릴산 1-메틸아다만틸 등이 사용된다. 스티렌, p-메틸스티렌, o-메틸스티렌, m-메틸스티렌, α-메틸스티렌 등의 방향족 비닐 화합물을 상기 (메타)아크릴산이나 (메타)아크릴산 에스테르와 공중합해도 된다.As an acrylic resin, what carried out radical polymerization of (meth) acrylic acid and (meth) acrylic acid ester is preferable. Examples of (meth) acrylic acid esters include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, cyclopropyl (meth) acrylate, cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, and cyclo (meth) acrylate Hexenyl, 4-methoxycyclohexyl (meth) acrylate, 2-cyclopropyloxycarbonylethyl (meth) acrylate, 2-cyclopentyloxycarbonylethyl (meth) acrylate, 2-cyclohexyloxyca (meth) acrylate Carbonyl ethyl, (meth) acrylic acid 2-cyclohexenyloxycarbonylethyl, (meth) acrylic acid 2- (4-methoxycyclohexyl) oxycarbonylethyl, (meth) acrylic acid norbornyl, (meth) acrylic acid isoacrylate Boryl, tricyclodecanyl (meth) acrylate, tetracyclodecanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, adamantyl (meth) acrylate, adamantylmethyl (meth) acrylate, (meth) acrylate Acrylic acid 1-meth Oh, just like Teal is used. You may copolymerize aromatic vinyl compounds, such as styrene, p-methylstyrene, o-methylstyrene, m-methylstyrene, (alpha) -methylstyrene, with the said (meth) acrylic acid and (meth) acrylic acid ester.
또한, 에틸렌성 불포화 이중결합기를 갖는 에폭시 화합물을 (메타)아크릴산에 부가반응시킴으로써 에틸렌성 불포화 이중결합기를 도입할 수 있다. 에틸렌성 불포화 이중결합기를 갖는 에폭시 화합물로서는 이하의 화합물을 들 수 있다.Moreover, an ethylenically unsaturated double bond group can be introduce | transduced by addition-reacting the epoxy compound which has an ethylenically unsaturated double bond group to (meth) acrylic acid. Examples of the epoxy compound having an ethylenically unsaturated double bond group include the following compounds.
구체적으로는 (메타)아크릴산 글리시딜, (메타)아크릴산 α-에틸글리시딜, (메타)아크릴산 α-n-프로필글리시딜, (메타)아크릴산 α-n-부틸글리시딜, (메타)아크릴산 3,4-에폭시부틸, (메타)아크릴산 3,4-에폭시헵틸, (메타)아크릴산 α-에틸-6,7-에폭시헵틸, 알릴글리시딜에테르, 비닐글리시딜에테르, o-비닐벤질글리시딜에테르, m-비닐벤질글리시딜에테르, p-비닐벤질글리시딜에테르, α-메틸-o-비닐벤질글리시딜에테르, α-메틸-m-비닐벤질글리시딜에테르, α-메틸-p-비닐벤질글리시딜에테르, 2,3-디글리시딜옥시메틸스티렌, 2,4-디글리시딜옥시메틸스티렌, 2,5-디글리시딜옥시메틸스티렌, 2,6-디글리시딜옥시메틸스티렌, 2,3,4-트리글리시딜옥시메틸스티렌, 2,3,5-트리글리시딜옥시메틸스티렌, 2,3,6-트리글리시딜옥시메틸스티렌, 3,4,5-트리글리시딜옥시메틸스티렌, 2,4,6-트리글리시딜옥시메틸스티렌 등이다.Specifically, (meth) acrylic acid glycidyl, (meth) acrylic acid (alpha) -ethylglycidyl, (meth) acrylic acid (alpha) -n-propylglycidyl, (meth) acrylic acid (alpha) -n-butylglycidyl, (meth) 3,4-Epoxybutyl acrylate, 3,4-epoxyheptyl (meth) acrylate, α-ethyl-6,7-epoxyheptyl, allylglycidyl ether, vinylglycidyl ether, (meth) acrylic acid Benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether, α-methyl-o-vinyl benzyl glycidyl ether, α-methyl-m-vinyl benzyl glycidyl ether, α-methyl-p-vinylbenzylglycidylether, 2,3-diglycidyloxymethylstyrene, 2,4-diglycidyloxymethylstyrene, 2,5-diglycidyloxymethylstyrene, 2 , 6-diglycidyloxymethylstyrene, 2,3,4-triglycidyloxymethylstyrene, 2,3,5-triglycidyloxymethylstyrene, 2,3,6-triglycidyloxymethylstyrene, 3,4,5-triglycidyloxymethylstyrene, 2,4,6 -Triglycidyloxymethyl styrene.
본 발명의 네거티브형 감광성 수지 조성물에 있어서 (B) 알칼리 가용성 수지의 함유량에 특별히 제한은 없고, 원하는 막두께나 용도에 따라 임의로 선택할 수 있다. (B) 알칼리 가용성 수지는 네거티브형 감광성 수지 조성물의 고형분에 대하여 10~60질량% 첨가하는 것이 바람직하다.There is no restriction | limiting in particular in content of (B) alkali-soluble resin in the negative photosensitive resin composition of this invention, It can select arbitrarily according to a desired film thickness and a use. (B) It is preferable to add 10-60 mass% of alkali-soluble resin with respect to solid content of negative photosensitive resin composition.
본 발명의 네거티브형 감광성 조성물은 (C) 다관능 모노머를 함유한다. 다관능 모노머란 분자 중에 적어도 2개 이상의 에틸렌성 불포화 이중결합을 갖는 화합물을 말한다. 라디칼 중합성의 용이함을 고려하면 아크릴기를 갖는 다감능 모노머가 바람직하다.The negative photosensitive composition of this invention contains the (C) polyfunctional monomer. The polyfunctional monomer refers to a compound having at least two or more ethylenically unsaturated double bonds in the molecule. Considering the ease of radical polymerizability, the polyfunctional monomer which has an acryl group is preferable.
구체예로서는 비스페놀A 디글리시딜에테르(메타)아크릴레이트, 폴리(메타)아크릴레이트카르바메이트, 변성 비스페놀A 에폭시(메타)아크릴레이트, 아디프산 1,6-헥산디올(메타)아크릴산 에스테르, 무수프탈산 프로필렌옥사이드(메타)아크릴산 에스테르, 트리멜리트산 디에틸렌글리콜(메타)아크릴산 에스테르, 로진 변성 에폭시디(메타)아크릴레이트, 알키드 변성 (메타)아크릴레이트와 같은 올리고머 또는 트리프로필렌글리콜디(메타)아크릴레이트, 1,6-헥산디올디(메타)아크릴레이트, 비스페놀A 디글리시딜에테르디(메타)아크릴레이트, 트리메티롤프로판트리(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 트리아크릴포르말, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 트리펜타에리스리톨헵타(메타)아크릴레이트, 트리펜타에리스리톨옥타(메타)아크릴레이트, [9,9-비스[4-(2-아크릴로일옥시에톡시)페닐]플루오렌 등을 들 수 있다.Specific examples include bisphenol A diglycidyl ether (meth) acrylate, poly (meth) acrylate carbamate, modified bisphenol A epoxy (meth) acrylate, adipic acid 1,6-hexanediol (meth) acrylic acid ester, Oligomeric or tripropylene glycol di (meth), such as phthalic anhydride propylene oxide (meth) acrylic acid ester, trimellitic acid diethylene glycol (meth) acrylic acid ester, rosin modified epoxydi (meth) acrylate, alkyd modified (meth) acrylate Acrylate, 1,6-hexanediol di (meth) acrylate, bisphenol A diglycidyl ether di (meth) acrylate, trimetholpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, Triacyl formal, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth Ta) acrylate, tripentaerythritolhepta (meth) acrylate, tripentaerythritolocta (meth) acrylate, [9,9-bis [4- (2-acryloyloxyethoxy) phenyl] fluorene, etc. Can be mentioned.
본 발명의 네거티브형 감광성 수지 조성물은 (D) 광라디칼 중합 개시제를 함유한다. (D) 광라디칼 중합 개시제는 광(자외선, 전자선을 포함한다)에 의해 분해 및/또는 반응하고, 라디칼을 발생시키는 것이면 어떤 것이라도 된다. 경화막의 경도를 보다 높게 하기 위해서는 α-아미노알킬페논 화합물, 아실포스핀옥사이드 화합물, 옥심에스테르 화합물, 아미노기를 갖는 벤조페논 화합물 또는 아미노기를 갖는 벤조산 에스테르 화합물을 사용하는 것이 바람직하다. 또한, 이들 화합물을 2종 이상 함유해도 된다.The negative photosensitive resin composition of this invention contains the (D) radical photopolymerization initiator. The radical photopolymerization initiator (D) may be any one as long as it decomposes and / or reacts with light (including ultraviolet rays and electron beams) to generate radicals. In order to make hardness of a cured film higher, it is preferable to use the (alpha)-aminoalkyl phenone compound, the acyl phosphine oxide compound, the oxime ester compound, the benzophenone compound which has an amino group, or the benzoic acid ester compound which has an amino group. Moreover, you may contain 2 or more types of these compounds.
α-아미노알킬페논 화합물의 구체예로서는 2-메틸-[4-(메틸티오)페닐]-2-모르폴리노프로판-1-온, 2-디메틸아미노-2-(4-메틸벤질)-1-(4-모르폴린-4-일-페닐)-부탄-1-온, 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부타논-1 등을 들 수 있다.Specific examples of the α-aminoalkylphenone compound include 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one and 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) -butan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1, etc. are mentioned.
아실포스핀옥사이드 화합물의 구체예로서는 2,4,6-트리메틸벤조일페닐포스핀옥사이드, 비스(2,4,6-트리메틸벤조일)-페닐포스핀옥사이드, 비스(2,6-디메톡시벤조일)-(2,4,4-트리메틸펜틸)-포스핀옥사이드 등을 들 수 있다.Specific examples of the acylphosphine oxide compound include 2,4,6-trimethylbenzoylphenylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2,6-dimethoxybenzoyl)-( 2,4,4-trimethylpentyl) -phosphine oxide, etc. are mentioned.
옥심에스테르 화합물의 구체예로서는 1-페닐-1,2-프로판디온-2-(o-에톡시카르보닐)옥심, 1,2-옥탄디온, 1-[4-(페닐티오)-2-(O-벤조일옥심)], 1-페닐-1,2-부타디온-2-(o-메톡시카르보닐)옥심, 1,3-디페닐프로판트리온-2-(o-에톡시카르보닐)옥심, 에탄온, 1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-, 1-(O-아세틸옥심) 등을 들 수 있다.Specific examples of the oxime ester compound include 1-phenyl-1,2-propanedione-2- (o-ethoxycarbonyl) oxime, 1,2-octanedione, 1- [4- (phenylthio) -2- (O -Benzoyl oxime)], 1-phenyl-1,2-butadione-2- (o-methoxycarbonyl) oxime, 1,3-diphenylpropanetrione-2- (o-ethoxycarbonyl) oxime , Ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime), and the like.
아미노기를 갖는 벤조페논 화합물의 구체예로서는 4,4-비스(디메틸아미노)벤조페논, 4,4-비스(디에틸아미노)벤조페논 등을 들 수 있다.As a specific example of the benzophenone compound which has an amino group, 4, 4-bis (dimethylamino) benzophenone, 4, 4-bis (diethylamino) benzophenone, etc. are mentioned.
아미노기를 갖는 벤조산 에스테르 화합물의 구체예로서는 p-디메틸아미노벤조산 에틸, 2-에틸헥실-p-디메틸아미노벤조에이트, p-디에틸아미노벤조산 에틸 등을 들 수 있다.Specific examples of the benzoic acid ester compound having an amino group include ethyl p-dimethylaminobenzoate, 2-ethylhexyl-p-dimethylaminobenzoate, ethyl p-diethylaminobenzoate and the like.
(D) 광라디칼 중합 개시제의 함유량은 네거티브형 감광성 수지 조성물의 고형분 중 0.01질량% 이상이 바람직하고, 0.1질량% 이상이 보다 바람직하다. 또한, 20질량% 이하가 바람직하고, 10질량% 이하가 보다 바람직하다. 상기 범위로 함으로써 라디칼 경화를 충분히 진행시킬 수 있고, 또한 잔류한 라디칼 중합 개시제의 용출 등을 막아 내용제성을 확보할 수 있다.(D) 0.01 mass% or more is preferable in solid content of a negative photosensitive resin composition, and, as for content of a radical photopolymerization initiator, 0.1 mass% or more is more preferable. Moreover, 20 mass% or less is preferable, and 10 mass% or less is more preferable. By setting it as the said range, radical hardening can fully advance and the elution of the residual radical polymerization initiator etc. can be prevented, and solvent resistance can be ensured.
본 발명의 네거티브형 감광성 수지 조성물은 중합 금지제를 함유해도 된다. 중합 금지제를 함유함으로써 조성물의 보존 안정성이 향상되고, 패턴 가공을 필요로 하는 용도에서는 현상 후의 해상도가 향상된다. 중합 금지제의 구체예로서는 페놀, 카테콜, 레조르시놀, 하이드로퀴논, 4-t-부틸카테콜, 2,6-디(t-부틸)-p-크레졸, 페노티아진, 4-메톡시페놀 등을 들 수 있다.The negative photosensitive resin composition of this invention may contain a polymerization inhibitor. By containing a polymerization inhibitor, the storage stability of a composition improves and the resolution after image development improves in the use which requires pattern processing. Specific examples of the polymerization inhibitor include phenol, catechol, resorcinol, hydroquinone, 4-t-butylcatechol, 2,6-di (t-butyl) -p-cresol, phenothiazine, and 4-methoxyphenol Etc. can be mentioned.
중합 금지제의 함유량은 네거티브형 감광성 수지 조성물의 고형분 중 0.01질량% 이상이 바람직하고, 0.1질량% 이상이 보다 바람직하다. 한편, 경화막의 경도를 높게 유지하는 관점에서는 5질량% 이하가 바람직하고, 1질량% 이하가 보다 바람직하다.0.01 mass% or more is preferable in solid content of a negative photosensitive resin composition, and, as for content of a polymerization inhibitor, 0.1 mass% or more is more preferable. On the other hand, 5 mass% or less is preferable from a viewpoint of maintaining the hardness of a cured film high, and 1 mass% or less is more preferable.
본 발명의 네거티브형 감광성 수지 조성물은 열산 발생제를 함유해도 된다. 열산 발생제에 의해 실란커플링제의 접착성 향상 효과를 보다 높일 수 있다. 바람직하게 사용되는 열산 발생제의 구체예로서는 트리페닐술포늄, 4-히드록시페닐디메틸술포늄, 벤질-4-히드록시페닐메틸술포늄, 2-메틸벤질-4-히드록시페닐메틸술포늄, 2-메틸벤질-4-아세틸페닐메틸술포늄, 2-메틸벤질-4-벤조일옥시페닐메틸술포늄, 이것들의 메탄술폰산염, 트리플루오로메탄술폰산염, 캠퍼술폰산염, p-톨루엔술폰산염 등을 들 수 있다.The negative photosensitive resin composition of this invention may contain a thermal acid generator. By a thermal acid generator, the adhesive improvement effect of a silane coupling agent can be heightened more. Specific examples of the thermal acid generator used preferably include triphenylsulfonium, 4-hydroxyphenyldimethylsulfonium, benzyl-4-hydroxyphenylmethylsulfonium, 2-methylbenzyl-4-hydroxyphenylmethylsulfonium, 2 -Methylbenzyl-4-acetylphenylmethylsulfonium, 2-methylbenzyl-4-benzoyloxyphenylmethylsulfonium, these methanesulfonates, trifluoromethanesulfonates, camphorsulfonates, p-toluenesulfonates and the like Can be mentioned.
또한, SI-60, SI-80, SI-100, SI-110, SI-145, SI-150, SI-200, SI-60L, SI-80L, SI-100L, SI-110L, SI-145L, SI-150L, SI-160L, SI-180L[모두 산신카가쿠코교(주)제]도 바람직하게 사용된다. 이것들을 2종 이상 함유해도 된다.In addition, SI-60, SI-80, SI-100, SI-110, SI-145, SI-150, SI-200, SI-60L, SI-80L, SI-100L, SI-110L, SI-145L, SI-150L, SI-160L, and SI-180L (all manufactured by Sanshin Kagaku Kogyo Co., Ltd.) are also preferably used. You may contain 2 or more types of these.
열산 발생제의 함유량은 네거티브형 감광성 수지 조성물의 수지 성분, 즉 (B) 알칼리 가용성 수지, (C) 다관능 아크릴 모노머의 합계량에 대하여 0.1~3질량%가 바람직하다. 0.1질량%보다 적으면 접착성 향상 효과는 적고, 3질량%보다 많으면 패턴이 마스크 패턴보다 커져 버려 해상도가 저하되어 버린다.As for content of a thermal acid generator, 0.1-3 mass% is preferable with respect to the resin component of a negative photosensitive resin composition, ie, the total amount of (B) alkali-soluble resin and (C) polyfunctional acrylic monomer. When less than 0.1 mass%, there is little adhesive improvement effect, and when more than 3 mass%, a pattern will become larger than a mask pattern, and resolution will fall.
본 발명의 실록산 수지 조성물은 자외선 흡수제를 함유해도 된다. 자외선 흡수제를 함유함으로써 얻어지는 경화막의 내광성이 향상되고, 패턴 가공을 필요로 하는 용도에서는 현상 후의 해상도가 향상된다. 자외선 흡수제로서는 특별하게 한정은 없고, 공지의 것을 사용할 수 있다.The siloxane resin composition of this invention may contain a ultraviolet absorber. The light resistance of the cured film obtained by containing a ultraviolet absorber improves, and the resolution after image development improves in the use which requires pattern processing. There is no limitation in particular as a ultraviolet absorber, A well-known thing can be used.
투명성, 비착색성의 면으로부터 벤조트리아졸계 화합물, 벤조페논계 화합물, 트리아진계 화합물이 바람직하게 사용된다.A benzotriazole type compound, a benzophenone type compound, and a triazine type compound are used preferably from a transparency and non-coloring point.
벤조트리아졸계 화합물의 자외선 흡수제로서는 2-(2H벤조트리아졸-2-일)페놀, 2-(2H-벤조트리아졸-2-일)-4,6-t-펜틸페놀, 2-(2H벤조트리아졸-2-일)-4-(1,1,3,3-테트라메틸부틸)페놀, 2(2H-벤조트리아졸-2-일)-6-도데실-4-메틸페놀, 2-(2'-히드록시-5'-메타크릴옥시에틸페닐)-2H-벤조트리아졸 등을 들 수 있다.As a ultraviolet absorber of a benzotriazole type compound, 2- (2H benzotriazol-2-yl) phenol, 2- (2H- benzotriazol-2-yl) -4, 6- t-pentyl phenol, 2- (2H benzo) Triazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2 (2H-benzotriazol-2-yl) -6-dodecyl-4-methylphenol, 2- (2'-hydroxy-5'-methacryloxyethylphenyl) -2H-benzotriazole etc. are mentioned.
벤조페논계 화합물의 자외선 흡수제로서는 2-히드록시-4-메톡시벤조페논 등을 들 수 있다.2-hydroxy-4-methoxy benzophenone etc. are mentioned as a ultraviolet absorber of a benzophenone type compound.
트리아진계 화합물의 자외선 흡수제로서는 2-(4,6-디페닐-1,3,5트리아진-2-일)-5-[(헥실)옥시]-페놀 등을 들 수 있다.As a ultraviolet absorber of a triazine type compound, 2- (4,6-diphenyl-1,3,5 triazin-2-yl) -5-[(hexyl) oxy] -phenol etc. are mentioned.
본 발명의 네거티브형 감광성 수지 조성물은 용매를 함유해도 된다. 각 성분을 균일하게 용해하고, 얻어지는 도포막의 투명성을 향상시킬 수 있는 점에서 알코올성 수산기를 갖는 화합물 또는 카르보닐기를 갖는 환상 화합물이 바람직하게 사용된다. 이것들을 2종 이상 함유해도 된다. 또한, 대기압하의 비점이 110~250℃인 화합물이 보다 바람직하다.The negative photosensitive resin composition of this invention may contain a solvent. Since the component can be melt | dissolved uniformly and the transparency of the coating film obtained can be improved, the compound which has an alcoholic hydroxyl group, or the cyclic compound which has a carbonyl group is used preferably. You may contain 2 or more types of these. Moreover, the compound whose boiling point under atmospheric pressure is 110-250 degreeC is more preferable.
비점을 110℃ 이상으로 함으로써 도막시에 적절하게 건조가 진행되어 도포 불균일이 없는 양호한 도막이 얻어진다. 한편, 비점을 250℃ 이하로 했을 경우 막 중의 잔존 용제량을 적게 억제할 수 있고, 열경화시의 막 수축을 보다 저감할 수 있기 때문에 보다 양호한 평탄성이 얻어진다.By setting a boiling point to 110 degreeC or more, drying advances suitably at the time of a coating film, and the favorable coating film without coating unevenness is obtained. On the other hand, when the boiling point is 250 ° C. or less, the amount of residual solvent in the film can be reduced to a small degree, and the film shrinkage at the time of thermosetting can be further reduced, so that better flatness is obtained.
알코올성 수산기를 갖고, 대기압하의 비점이 110~250℃인 화합물의 구체예로서는 아세톨, 3-히드록시-3-메틸-2-부타논, 4-히드록시-3-메틸-2-부타논, 5-히드록시-2-펜타논, 4-히드록시-4-메틸-2-펜타논(디아세톤알코올), 락트산 에틸, 락트산 부틸, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노n-프로필에테르, 프로필렌글리콜모노n-부틸에테르, 프로필렌글리콜모노t-부틸에테르, 3-메톡시-1-부탄올, 3-메틸-3-메톡시-1-부탄올 등을 들 수 있다. 이들 중에서도 보존 안정성의 관점에서는 디아세톤알코올이 바람직하고, 단차 피복성의 점에서는 프로필렌글리콜모노t-부틸에테르가 바람직하다.Specific examples of the compound having an alcoholic hydroxyl group and having a boiling point at atmospheric pressure of 110 to 250 ° C. include acetol, 3-hydroxy-3-methyl-2-butanone, 4-hydroxy-3-methyl-2-butanone, and 5 -Hydroxy-2-pentanone, 4-hydroxy-4-methyl-2-pentanone (diacetone alcohol), ethyl lactate, butyl lactate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monon -Propyl ether, propylene glycol mono n-butyl ether, propylene glycol mono t-butyl ether, 3-methoxy-1-butanol, 3-methyl-3-methoxy-1-butanol, etc. are mentioned. Among them, diacetone alcohol is preferable from the viewpoint of storage stability, and propylene glycol monot-butyl ether is preferable from the point of covering coverage.
카르보닐기를 갖고, 대기압하의 비점이 110~250℃인 환상 화합물의 구체예로서는 γ-부티로락톤, γ-발레로락톤, δ-발레로락톤, 탄산프로필렌, N-메틸피롤리돈, 시클로헥사논, 시클로헵타논 등을 들 수 있다. 이들 중에서도 γ-부티로락톤이 바람직하다.Specific examples of the cyclic compound having a carbonyl group and having a boiling point at atmospheric pressure of 110 to 250 ° C include γ-butyrolactone, γ-valerolactone, δ-valerolactone, propylene carbonate, N-methylpyrrolidone, cyclohexanone, Cycloheptanone etc. are mentioned. Among these, γ-butyrolactone is preferable.
또한, 본 발명의 네거티브형 감광성 수지 조성물은 상기 이외의 아세테이트류, 케톤류, 에테르류 등의 각종 용매를 함유해도 된다.Moreover, the negative photosensitive resin composition of this invention may contain various solvents, such as acetates, ketones, and ethers other than the above.
용매의 함유량에 특별히 제한은 없고, 도포 방법 등에 따라 임의의 양을 사용할 수 있다. 예를 들면, 스핀코팅에 의해 막 형성을 행할 경우에는 용매량을 네거티브형 감광성 수지 조성물 전체의 50~95질량%로 하는 것이 일반적이다.There is no restriction | limiting in particular in content of a solvent, Arbitrary quantity can be used according to a coating method. For example, when forming a film by spin coating, it is common to make solvent amount into 50-95 mass% of the whole negative photosensitive resin composition.
본 발명의 네거티브형 감광성 수지 조성물은 수지 조성물의 경화를 촉진시키거나 또는 경화를 용이하게 하는 각종 경화제를 함유해도 된다. 경화제로서는 특별하게 한정은 없고, 공지의 것을 사용할 수 있다. 구체예로서는 질소 함유 유기물, 실리콘 수지 경화제, 각종 금속 알코올레이트, 각종 금속 킬레이트 화합물, 이소시아네이트 화합물 및 그 중합체, 메티롤화 멜라민 유도체, 메티롤화 요소 유도체 등이 있다. 이것들을 2종 이상 함유해도 된다. 그 중에서도 경화제의 안정성, 얻어진 도포막의 가공성 등으로부터 금속 킬레이트 화합물, 메티롤화 멜라민 유도체, 메티롤화 요소 유도체가 바람직하게 사용된다.The negative photosensitive resin composition of this invention may contain the various hardening | curing agent which accelerates hardening of a resin composition or makes hardening easy. There is no restriction | limiting in particular as a hardening | curing agent, A well-known thing can be used. Specific examples include nitrogen-containing organic substances, silicone resin curing agents, various metal alcoholates, various metal chelate compounds, isocyanate compounds and polymers thereof, methirolated melamine derivatives, methirolated urea derivatives, and the like. You may contain 2 or more types of these. Among them, metal chelate compounds, methirolated melamine derivatives and methirolized urea derivatives are preferably used in view of the stability of the curing agent and the workability of the obtained coating film.
본 발명의 네거티브형 감광성 수지 조성물은 도포시의 플로우성 향상을 위하여 불소계 계면활성제, 실리콘계 계면활성제 등의 각종 계면활성제를 함유해도 된다. 계면활성제의 종류에 특별히 제한은 없고, 예를 들면 불소계 계면활성제, 실리콘계 계면활성제, 폴리알킬렌옥사이드계 계면활성제, 폴리(메타)아크릴레이트계 계면활성제 등을 사용할 수 있다. 이것들을 2종 이상 사용해도 된다.The negative photosensitive resin composition of this invention may contain various surfactant, such as a fluorochemical surfactant and silicone type surfactant, in order to improve the flow property at the time of application | coating. There is no restriction | limiting in particular in the kind of surfactant, For example, a fluorine-type surfactant, a silicone type surfactant, a polyalkylene oxide type surfactant, a poly (meth) acrylate type surfactant, etc. can be used. You may use 2 or more types of these.
불소계 계면활성제의 시판품으로서는 "메가팩"(등록상표) F142D, 동 F172, 동 F173, 동 F183, 동 F445, 동 F470, 동 F475, 동 F477[이상 다이니폰잉크카가쿠코교(주)제], NBX-15, FTX-218[(주)네오스제]이 바람직하게 사용된다. 실리콘계 계면활성제의 시판품으로서는 BYK-333, BYK-301, BYK-331, BYK-345, BYK-307[빅케미저팬(주)제]이 바람직하게 사용된다.As a commercial item of a fluorine-type surfactant, "Megapack" (trademark) F142D, copper F172, copper F173, copper F183, copper F445, copper F470, copper F475, copper F477 (above Dainippon Ink & Chemical Co., Ltd. make) NBX-15 and FTX-218 (manufactured by Neos) are preferably used. As a commercial item of a silicone type surfactant, BYK-333, BYK-301, BYK-331, BYK-345, BYK-307 (made by Big Chemical Pan Co., Ltd.) is used preferably.
본 발명의 네거티브형 감광성 수지 조성물의 대표적인 제조 방법에 대해서 설명한다. 예를 들면, (A) 일반식(1)으로 나타내어지는 실란커플링제, (B) 알칼리 가용성 수지, (C) 다관능 아크릴 모노머, (D) 광라디칼 중합 개시제 및 필요에 따라 기타 첨가제를 임의의 용매에 첨가하고, 교반해서 용해시킨 후 얻어진 용액을 여과하여 네거티브형 감광성 수지 조성물이 얻어진다.The typical manufacturing method of the negative photosensitive resin composition of this invention is demonstrated. For example, (A) the silane coupling agent represented by General formula (1), (B) alkali-soluble resin, (C) polyfunctional acryl monomer, (D) optical radical polymerization initiator, and other additives as needed. The solution obtained after adding to a solvent, stirring and dissolving is filtered and a negative photosensitive resin composition is obtained.
본 발명의 네거티브형 감광성 수지 조성물을 사용한 경화막의 형성 방법에 대해서 예를 들어서 설명한다. 본 발명의 네거티브형 감광성 수지 조성물을 마이크로그라비아코팅, 스핀코팅, 딥코팅, 커튼플로우코팅, 롤코팅, 스프레이코팅, 슬릿코팅 등의 공지의 방법에 의해 하지 기판 상에 도포하고, 핫플레이트, 오븐 등의 가열 장치로 프리베이킹한다. 프리베이킹은 50~150℃의 범위에서 30초~30분간 행하고, 프리베이킹 후의 막두께는 0.1~15㎛로 하는 것이 바람직하다.An example is given and demonstrated about the formation method of the cured film using the negative photosensitive resin composition of this invention. The negative photosensitive resin composition of this invention is apply | coated on a base substrate by well-known methods, such as microgravure coating, spin coating, dip coating, curtain flow coating, roll coating, spray coating, and slit coating, and a hotplate, oven, etc. Prebaking is carried out with a heating apparatus. Prebaking is performed in 50 to 150 degreeC for 30 second-30 minutes, and it is preferable that the film thickness after prebaking shall be 0.1-15 micrometers.
프리베이킹 후 스텝퍼, 미러 프로젝션 마스크 얼라이너(MPA), 패럴렐 라이트 마스크 얼라이너(PLA) 등의 노광기를 이용하여 노광한다. 노광 강도는 10~4000J/㎡ 정도(파장 365㎚ 노광량 환산)이고, 이 광을 소망의 마스크를 통하여 또는 통하지 않고 조사한다. 노광 광원에 제한은 없고, i선, g선, h선 등의 자외선이나, KrF(파장 248㎚) 레이저, ArF(파장 193㎚) 레이저 등을 사용할 수 있다.After prebaking, exposure is performed using an exposure machine such as a stepper, a mirror projection mask aligner (MPA), and a parallel light mask aligner (PLA). Exposure intensity is about 10-4000 J / m <2> (wavelength 365nm exposure amount conversion), and this light is irradiated through or without a desired mask. There is no restriction | limiting in an exposure light source, Ultraviolet rays, such as i line | wire, g line | wire, h line | wire, KrF (wavelength 248 nm) laser, ArF (wavelength 193 nm) laser, etc. can be used.
이어서, 현상에 의해 노광부를 용해시켜 네거티브형의 패턴을 얻을 수 있다. 현상 방법으로서는 샤워, 디핑, 패들 등의 방법으로 현상액에 5초~10분간 침지하는 것이 바람직하다. 현상액으로서는 공지의 알칼리 현상액을 사용할 수 있다. 구체예로서는 알칼리 금속의 수산화물, 탄산염, 인산염, 규산염, 붕산염 등의 무기 알칼리, 2-디에틸아미노에탄올, 모노에탄올아민, 디에탄올아민 등의 아민류, 테트라메틸암모늄히드록사이드, 콜린 등의 4급 암모늄염을 1종 또는 2종 이상 포함하는 수용액 등을 들 수 있다. 현상 후 물로 린스하는 것이 바람직하고, 이어서 50~150℃의 범위에서 건조 베이킹을 행할 수도 있다.Subsequently, the exposed portion can be dissolved by development to obtain a negative pattern. As the developing method, it is preferably immersed in the developing solution for 5 seconds to 10 minutes by a method such as showering, dipping, paddle or the like. As a developing solution, a well-known alkaline developing solution can be used. Specific examples include inorganic alkalis such as hydroxides, carbonates, phosphates, silicates and borates of alkali metals, amines such as 2-diethylaminoethanol, monoethanolamine, diethanolamine, and quaternary ammonium salts such as tetramethylammonium hydroxide and choline. The aqueous solution containing 1 type, or 2 or more types is mentioned. It is preferable to rinse with water after image development, and you may carry out dry baking in 50-150 degreeC then.
그 후에 이 막을 핫플레이트, 오븐 등의 가열 장치로 150~450℃의 범위에서20분~1시간 정도 가열한다.Then, this film is heated by heating apparatuses, such as a hotplate and oven, for 20 minutes-about 1 hour in 150-450 degreeC.
본 발명의 네거티브형 감광성 수지 조성물을 경화해서 얻어지는 경화막은 터치 패널 보호막, 터치 패널 절연막, 각종 하드 코팅재, 반사 방지 필름, 광학필터로서 사용된다. 또한, 네거티브형 감광성을 갖기 때문에 액정이나 유기 EL 디스플레이의 TFT용 평탄화막, 절연막, 반사방지막, 컬러필터용 오버코트, 기둥재 등에 적합하게 사용된다. 이들 중에서도 특히 ITO나 몰리브덴 등 Si를 갖지 않는 기판과 열처리 후 및 약품 처리 후의 접착성이 요구되는 터치 패널 보호막이나 터치 패널 절연막으로서 적합하게 사용할 수 있다. 터치 패널의 방식으로서는 저항막식, 광학식, 전자유도식, 정전용량식 등을 들 수 있다. 정전용량식 터치 패널은 특히 높은 경도가 요구되기 때문에 본 발명의 경화막을 적합하게 사용할 수 있다.The cured film obtained by hardening | curing the negative photosensitive resin composition of this invention is used as a touch panel protective film, a touch panel insulating film, various hard coating materials, an antireflection film, and an optical filter. Moreover, since it has negative photosensitive property, it is used suitably for the TFT flattening film, insulating film, antireflection film, color filter overcoat, pillar material, etc. of a liquid crystal or an organic electroluminescent display. Among these, it can use suitably as a touchscreen protective film and a touchscreen insulating film which require the adhesiveness after the heat processing and chemical processing with the board | substrate which does not have Si, especially ITO and molybdenum. Examples of the touch panel system include a resistive film type, an optical type, an electromagnetic induction type, and a capacitive type. Since the capacitive touch panel especially requires high hardness, the cured film of this invention can be used suitably.
본 발명의 경화막을 터치 패널용 보호막으로서 사용할 경우, 막두께가 1.5㎛일 때에 경도가 4H 이상, 투과율이 95% 이상, 해상도는 20㎛ 이하인 것이 바람직하다. 경도나 투과율은 노광량, 열경화 온도의 선택에 따라 조정할 수 있다.When using the cured film of this invention as a protective film for touch panels, when film thickness is 1.5 micrometer, it is preferable that hardness is 4H or more, transmittance is 95% or more, and the resolution is 20 micrometer or less. The hardness and the transmittance can be adjusted depending on the selection of the exposure amount and the thermosetting temperature.
실시예Example
이하 실시예를 들어서 본 발명을 더욱 구체적으로 설명한다. 본 발명은 이들 실시예에 한정되지 않는다. 합성예 및 실시예에 사용한 화합물 중 약어를 사용하고 있는 것에 대해서 이하에 나타낸다.The present invention will be described in more detail with reference to the following Examples. The present invention is not limited to these examples. It shows below about using the abbreviation among the compounds used for the synthesis example and the Example.
PGMEA : 프로필렌글리콜모노메틸에테르아세테이트PGMEA: Propylene glycol monomethyl ether acetate
DAA : 디아세톤알코올.DAA: diacetone alcohol.
합성예 1 실란커플링제 혼합 용액(a-1)의 합성Synthesis Example 1 Synthesis of Silane Coupling Agent Mixed Solution (a-1)
PGMEA 200g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 t-부틸아민 11.70g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 40℃에서 2시간 교반했다. 그 후에 80℃까지 승온시키고, 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 3-(tert-부틸카르바모일)-6-(트리메톡시실릴)헥산산, 2-(2-(tert-부틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산의 혼합 용액(a-1)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 11.70 g (160 mmol) of t-butylamine were added to 200 g of PGMEA, and it stirred at room temperature for a while, and stirred at 40 degreeC for 2 hours. Then, it heated up to 80 degreeC and made it react for 6 hours. The resulting solution was diluted with PGMEA so that the solid concentration was 20%, 3- (tert-butylcarbamoyl) -6- (trimethoxysilyl) hexanoic acid, 2- (2- (tert-butylamino) -2- A mixed solution (a-1) of oxoethyl) -5- (trimethoxysilyl) pentanoic acid was obtained.
합성예 2 실란커플링제 혼합 용액(a-2)의 합성Synthesis Example 2 Synthesis of Silane Coupling Agent Mixed Solution (a-2)
PGMEA 200g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 t-펜틸아민 9.45g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 40℃에서 2시간 교반했다. 그 후에 80℃까지 승온시키고, 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 2-(2-(t-펜틸아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(tert-펜틸카르바모일)-6-(트리메톡시실릴)헥산산의 혼합 용액(a-2)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 9.45 g (160 mmol) of t-pentylamine were added to 200 g of PGMEA, and it stirred at room temperature for a while, and stirred at 40 degreeC for 2 hours. Then, it heated up to 80 degreeC and made it react for 6 hours. The obtained solution was diluted with PGMEA so that the solid content concentration was 20%, and 2- (2- (t-pentylamino) -2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid and 3- (tert-pentylcar A mixed solution (a-2) of barmoyl) -6- (trimethoxysilyl) hexanoic acid was obtained.
합성예 3 실란커플링제 혼합 용액(a-3)의 합성Synthesis Example 3 Synthesis of Silane Coupling Agent Mixed Solution (a-3)
PGMEA 200g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 이소프로필아민 9.45g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 40℃에서 2시간 교반했다. 그 후에 80℃까지 승온시키고, 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 2-(2-(이소프로필아미노)-2-옥소에틸)-5-(트리메톡시실릴)펜탄산, 3-(tert-이소프로필카르바모일)-6-(트리메톡시실릴)헥산산의 혼합 용액(a-3)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 9.45 g (160 mmol) of isopropylamine were added to 200 g of PGMEA, and it stirred at room temperature for a while, and stirred at 40 degreeC for 2 hours. Then, it heated up to 80 degreeC and made it react for 6 hours. The resulting solution was diluted with PGMEA so that the solid content concentration was 20% and 2- (2- (isopropylamino) -2-oxoethyl) -5- (trimethoxysilyl) pentanoic acid, 3- (tert-isopropylcart A mixed solution (a-3) of barmoyl) -6- (trimethoxysilyl) hexanoic acid was obtained.
합성예 4 실란커플링제 혼합 용액(a-4)의 합성Synthesis Example 4 Synthesis of Silane Coupling Agent Mixed Solution (a-4)
PGMEA 200g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 n-프로필아민 9.45g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 40℃에서 2시간 교반했다. 그 후에 80℃까지 승온시키고, 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 2-(2-옥소-2-(프로필아미노)에틸)-5-(트리메톡시실릴)펜탄산, 3-(프로필카르바모일)-6-(트리메톡시실릴)헥산산의 혼합 용액(a-4)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 9.45 g (160 mmol) of n-propylamine were added to 200 g of PGMEA, and it stirred at room temperature for a while, and stirred at 40 degreeC for 2 hours. Then, it heated up to 80 degreeC and made it react for 6 hours. The obtained solution was diluted with PGMEA so that the solid content concentration was 20%, and 2- (2-oxo-2- (propylamino) ethyl) -5- (trimethoxysilyl) pentanoic acid and 3- (propylcarbamoyl)- A mixed solution (a-4) of 6- (trimethoxysilyl) hexanoic acid was obtained.
합성예 5 실란커플링제 혼합 용액(a-5)의 합성Synthesis Example 5 Synthesis of Silane Coupling Agent Mixed Solution (a-5)
PGMEA 200g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 아닐린 14.90g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 40℃에서 2시간 교반했다. 그 후에 80℃까지 승온시키고, 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 2-(2-옥소-2-(페닐아미노)에틸)-5-(트리메톡시실릴)펜탄산, 3-(페닐카르바모일)-6-(트리메톡시실릴)헥산산의 혼합 용액(a-5)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 14.90 g (160 mmol) of aniline were added to 200 g of PGMEA, and it stirred at room temperature for a while, and stirred at 40 degreeC for 2 hours. Then, it heated up to 80 degreeC and made it react for 6 hours. The obtained solution was diluted with PGMEA so that the solid content concentration was 20%, and 2- (2-oxo-2- (phenylamino) ethyl) -5- (trimethoxysilyl) pentanoic acid and 3- (phenylcarbamoyl)- A mixed solution (a-5) of 6- (trimethoxysilyl) hexanoic acid was obtained.
합성예 6 실란커플링제 혼합 용액(a-6)의 합성Synthesis Example 6 Synthesis of Silane Coupling Agent Mixed Solution (a-6)
PGMEA 200g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 에탄올 7.37g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 40℃에서 2시간 교반했다. 그 후에 80℃까지 승온시키고, 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 4-에톡시-4-옥소-2-(트리메톡시실릴)부탄산, 4-에톡시-4-옥소-3-(트리메톡시실릴)부탄산의 혼합 용액(a-6)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 7.37 g (160 mmol) of ethanol were added to 200 g of PGMEA, and it stirred at room temperature for a while, and stirred at 40 degreeC for 2 hours. Then, it heated up to 80 degreeC and made it react for 6 hours. The resulting solution was diluted with PGMEA so that the solid concentration was 20%, and 4-ethoxy-4-oxo-2- (trimethoxysilyl) butanoic acid and 4-ethoxy-4-oxo-3- (trimethoxysilyl ) A mixed solution of butanoic acid (a-6) was obtained.
합성예 7 실란커플링제 용액(a-7)의 합성Synthesis Example 7 Synthesis of Silane Coupling Agent Solution (a-7)
PGMEA 400g에 3-트리메톡시실릴프로필숙신산 무수물 41.97g(160㎜ol)과 t-부틸아민 11.70g(160㎜ol)을 첨가해서 잠시 실온에서 교반한 후, 60℃에서 2시간 교반했다. 그 후에 140℃까지 승온시키고, PGMEA와 물을 공비하면서 6시간 반응시켰다. 얻어진 용액을 고형분 농도가 20%가 되도록 PGMEA로 희석하여 1-(tert-부틸)-3-트리메톡시실릴피롤리딘-2,5-디온 용액(a-7)을 얻었다.41.97 g (160 mmol) of 3-trimethoxysilylpropyl succinic anhydride and 11.70 g (160 mmol) of t-butylamine were added to 400 g of PGMEA, and it stirred at room temperature for a while, and stirred at 60 degreeC for 2 hours. Then, it heated up to 140 degreeC and made it react for 6 hours, azeotropic PGMEA and water. The obtained solution was diluted with PGMEA so that solid content concentration might be 20%, and the 1- (tert-butyl) -3-trimethoxysilylpyrrolidine-2,5-dione solution (a-7) was obtained.
합성예 8 실록산 수지 용액(b-1)의 합성Synthesis Example 8 Synthesis of siloxane resin solution (b-1)
메틸트리메톡시실란 13.62g(0.1mol), 페닐트리메톡시실란 118.98g(0.6mol), 3-트리메톡시실릴프로필숙신산 39.39g(0.15mol), γ-메타크릴옥시프로필트리메톡시실란 35.16g, DAA 140.87g을 500㎖의 3구 플라스크에 넣었다. 그 후에 혼합액을 실온에서 교반하면서 물 59.4g에 인산 0.106g(주입 모노머에 대하여 0.05질량%)을 용해한 인산 수용액을 30분에 걸쳐 첨가했다. 그 후에 플라스크를 40℃의 오일 배스에 침지시켜 30분 교반한 후, 오일 배스를 30분에 걸쳐 115℃까지 승온시켰다. 승온 개시 1시간 후에 용액의 내부 온도가 100℃에 도달하고, 45분 더 가열 교반했다(내부 온도는 100~110℃). 반응 중에 부생성물인 메탄올, 물이 합계 89g 유출(溜出)되었다. 얻어진 폴리실록산의 DAA 용액에 대하여 폴리머 농도가 40질량%가 되도록 DAA를 첨가해서 실록산 수지 용액(b-1)을 얻었다. 얻어진 폴리머의 중량 평균 분자량은 7500이었다.13.62 g (0.1 mol) of methyltrimethoxysilane, 118.98 g (0.6 mol) of phenyltrimethoxysilane, 39.39 g (0.15 mol) of 3-trimethoxysilylpropyl succinic acid, γ-methacryloxypropyltrimethoxysilane 35.16 g and 140.87 g of DAA were placed in a 500 ml three-necked flask. Thereafter, an aqueous solution of phosphoric acid in which 0.106 g of phosphoric acid (0.05 mass% relative to the injection monomer) was dissolved in 59.4 g of water was added over 30 minutes while the mixed solution was stirred at room temperature. Thereafter, the flask was immersed in an oil bath at 40 ° C and stirred for 30 minutes, and then the oil bath was heated to 115 ° C over 30 minutes. The internal temperature of the solution reached 100 degreeC 1 hour after the start of temperature rising, and it heated and stirred for 45 minutes (internal temperature is 100-110 degreeC). In total, 89 g of byproduct methanol and water were released during the reaction. DAA was added so that a polymer concentration might be 40 mass% with respect to the DAA solution of obtained polysiloxane, and the siloxane resin solution (b-1) was obtained. The weight average molecular weight of the obtained polymer was 7500.
합성예 9 아크릴 수지 용액(b-2)의 합성Synthesis Example 9 Synthesis of Acrylic Resin Solution (b-2)
500㎖의 플라스크에 2,2'-아조비스(이소부티로니트릴)을 3g, PGMEA(프로필렌글리콜메틸에테르아세테이트)를 50g 주입했다. 그 후에 메타크릴산을 30g, 스티렌을 22.48g, 시클로헥실메타크릴레이트를 25.13g 첨가했다. 그 후에 혼합액을 실온에서 잠시 교반하고, 플라스크 내를 질소 치환한 후 70℃에서 5시간 가열 교반했다. 이어서, 얻어진 용액에 메타크릴산 글리시딜을 15g, 디메틸벤질아민을 1g, p-메톡시페놀을 0.2g, PGMEA를 100g 첨가하고, 90℃에서 4시간 가열 교반했다. 얻어진 아크릴 수지 용액의 고형분 농도가 40질량%가 되도록 PGMEA를 첨가하여 아크릴 수지 용액(b-2)을 얻었다. 아크릴 수지의 중량 평균 분자량은 13500, 산가는 100㎎KOH/g이었다.Into a 500 ml flask was charged 3 g of 2,2'-azobis (isobutyronitrile) and 50 g of PGMEA (propylene glycol methyl ether acetate). Thereafter, 30 g of methacrylic acid, 22.48 g of styrene, and 25.13 g of cyclohexyl methacrylate were added. Then, the liquid mixture was stirred at room temperature for a while, and after nitrogen-substituting the flask, it heated and stirred at 70 degreeC for 5 hours. Next, 15 g of methacrylic acid glycidyl, 1 g of dimethylbenzylamine, 0.2 g of p-methoxyphenol and 100 g of PGMEA were added to the obtained solution, and the mixture was heated and stirred at 90 ° C for 4 hours. PGMEA was added so that solid content concentration of the obtained acrylic resin solution might be 40 mass%, and the acrylic resin solution (b-2) was obtained. The weight average molecular weight of the acrylic resin was 13500, and the acid value was 100 mgKOH / g.
합성예 10 퀴논디아지드 화합물(q-1)의 합성Synthesis Example 10 Synthesis of Quinonediazide Compound (q-1)
건조 질소 기류하, TrisP-PA[상품명, 혼슈카가쿠코교(주)제] 21.23g(0.05mol)과 5-나프토퀴논디아지드술포닐산 염화물 37.62g(0.14mol)을 1,4-디옥산 450g에 용해시켜서 실온으로 했다. 이 용액에 1,4-디옥산 50g과 혼합한 트리에틸아민 15.58g(0.154mol)을 계 내가 35℃ 이상이 되지 않도록 적하했다. 적하 종료 후 30℃에서 2시간 교반했다. 트리에틸아민염을 여과하고, 여과액을 물에 투입했다. 그 후에 석출된 침전을 여과로 모았다. 이 침전을 진공 건조기에서 건조시켜 퀴논디아지드 화합물(q-1)을 얻었다.21.23 g (0.05 mol) of TrisP-PA (trade name, manufactured by Honshu Kagaku Kogyo Co., Ltd.) and 37.62 g (0.14 mol) of 5-naphthoquinone diazidesulfonyl chloride in 1,4-dioxane It dissolved in 450 g and made room temperature. 15.58 g (0.154 mol) of triethylamine mixed with 50 g of 1,4-dioxane was dripped at this solution so that system inside might not be 35 degreeC or more. It stirred at 30 degreeC after completion | finish of dripping for 2 hours. Triethylamine salt was filtered and the filtrate was poured into water. Thereafter, the precipitated precipitate was collected by filtration. This precipitate was dried in a vacuum drier to obtain a quinonediazide compound (q-1).
각 실시예·비교예에 있어서의 평가 방법을 이하에 나타낸다.The evaluation method in each Example and a comparative example is shown below.
(1) 경도의 측정(1) measurement of hardness
5㎝×5㎝의 유리 기판 상에 제작한 막두께 1.5㎛의 경화막에 대해서 「JIS K5600-5-4(1999년)」에 준거해서 연필 경도를 측정했다. 단, 부하 가중을 500g으로 했다.Pencil hardness was measured based on "JIS K5600-5-4 (1999)" about the cured film with a film thickness of 1.5 micrometers produced on the glass substrate of 5 cm x 5 cm. However, the load weighting was made into 500 g.
(2) ITO 접착성의 평가(2) Evaluation of ITO Adhesion
무알칼리 유리 기판(유리 두께 0.7㎜) 상에 ITO를 막두께 200옹스트롬, 저항치100Ω/□가 되도록 기판을 형성했다. 이 기판(이하 ITO 기판이라고 기재한다) 상에 제작한 막두께 1.5㎛의 경화막에 대해서 JIS「K5400」8.5.2(1990년) 크로스 컷 테이프법에 준해서 ITO와 경화막의 접착성을 평가했다. 유리 기판 상의 경화막 표면에 커터 나이프로 유리판의 소지에 도달하도록 직교하는 종횡 11줄씩의 평행한 직선을 1㎜간격으로 그어 1㎜×1㎜의 스퀘어(square)를 100개 제작했다. 잘린 경화막 표면에 셀로판 점착 테이프(폭=18㎜, 점착력=3.7N/10㎜)를 붙이고, 지우개(JIS S6050 합격품)로 문질러서 밀착시켰다. 그리고, 테이프의 일단을 들고, 판에 직각으로 유지하고 순간적으로 박리했을 때의 스퀘어의 잔존 수를 육안에 의해 평가했다. 스퀘어의 박리 면적에 의해 이하와 같이 판정했다.The board | substrate was formed on the alkali free glass substrate (glass thickness 0.7mm) so that ITO might be 200 angstroms in film thickness, and resistance value 100 (ohm) / square. The adhesiveness of ITO and a cured film was evaluated about the cured film with a film thickness of 1.5 micrometers produced on this board | substrate (hereafter described as an ITO board | substrate) according to JISK5400 8.5.2 (1990) cross-cut tape method. . A parallel straight line of 11 rows in length and width was orthogonal to the base of the glass plate with a cutter knife on the surface of the cured film on the glass substrate at intervals of 1 mm, and 100 squares of 1 mm x 1 mm were produced. The cellophane adhesive tape (width = 18mm, adhesive force = 3.7N / 10mm) was stuck to the cut cured film surface, and it rubbed and rubbed with an eraser (JIS S6050 pass product). Then, the number of squares remaining when the end of the tape was lifted, held at right angles to the plate, and peeled off instantaneously was evaluated by visual observation. It determined as follows by the peeling area of a square.
5 : 박리 면적 0%5: peeling area 0%
4 : 박리 면적 0~<5%4: Peeling area 0 to <5%
3 : 박리 면적 5~15%3: Peeling Area 5-15%
2 : 박리 면적 15~35%2: peeling area 15-35%
1 : 박리 면적 35~65%1: Peeling area 35-65%
0 : 박리 면적 65~100%.0: peeling area 65-100%.
(3) 해상도(3) resolution
1대 1의 폭의 라인 앤드 스페이스 패턴 마스크를 사용하여 최소 패턴을 형성할 수 있는 마스크 패턴의 폭을 측정했다.The width | variety of the mask pattern which can form a minimum pattern using the line-and-space pattern mask of 1 to 1 width was measured.
(4) 평탄화 성능의 평가(4) evaluation of planarization performance
상기 (1)에 기재된 방법으로 규소 웨이퍼 상에 제작한 경화막에 대해서 큐어 전후의 경화 수축률을 산출했다. 이 값이 0~15%인 경우 평탄화 성능은 양호하다고 할 수 있다. 경화 수축률은 이하의 식에 따라서 산출했다.About the cured film produced on the silicon wafer by the method of said (1), the cure shrinkage rate before and behind a cure was computed. If the value is 0 to 15%, the planarization performance is good. Hardening shrinkage was computed according to the following formula | equation.
경화 수축률(%)=(1-큐어로 얻어진 경화막의 막두께÷현상 후의 막두께)×100Curing shrinkage percentage (%) = (film thickness ÷ development film thickness of cured film obtained by 1-cure) x 100
단, 비감광성 수지 조성물의 경화 수축률을 산출하는 경우에는 현상 공정을 행하지 않기 때문에 「현상 후의 막두께」를 「프리베이킹 후의 막두께」로 해서 산출했다. 막두께 측정에는 람다에이스 STM-602[상품명 다이니폰스크린세이조(주)제]를 사용했다. 굴절률은 측정물에 상관없이 1.52로 하고, 프리베이킹 후의 막두께, 현상 후의 막두께 및 큐어로 얻어진 경화막의 막두께를 측정했다.However, when the cure shrinkage rate of the non-photosensitive resin composition was calculated, the development step was not performed. Thus, "film thickness after development" was calculated as "film thickness after prebaking". A lambda ace STM-602 (trade name Dainippon Screen Seizo Co., Ltd. product) was used for the film thickness measurement. The refractive index was 1.52 irrespective of the measurement object, and the film thickness after prebaking, the film thickness after image development, and the film thickness of the cured film obtained by the cure were measured.
실시예 1Example 1
황색등 하에서 2-메틸-[4-(메틸티오)페닐]-2-모르폴리노프로판-1-온[상품명 「이르가큐어907」치바스페셜리티케미칼(주)사제(이하 IC907이라고 기재한다)] 1.557g, 4,4-비스(디에틸아미노)벤조페논(이하 EK라고 기재한다) 0.173g을 DAA 21.618g, PGMEA 34.489g에 용해시켰다. 이 용액에 디펜타에리스리톨헥사아크릴레이트[상품명 「카야래드 DPHA」신니폰카야쿠(주)사제(이하 DPHA라고 기재한다)] 10.382g, 실란커플링제 혼합 용액(a-1) 4.326g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 실록산 수지 용액(b-1) 17.303g, 실리콘계 계면활성제인 BYK-333[빅케미저팬(주)제]의 PGMEA 1질량% 용액 1.500g을 첨가해 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-1)을 얻었다.2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one under a yellow lamp [trade name "Irgacure907" manufactured by Chiba Specialty Chemical Co., Ltd. (hereinafter referred to as IC907)] 1.557 g and 4,4-bis (diethylamino) benzophenone (hereinafter referred to as EK) were dissolved in 21.618 g of DAA and 34.489 g of PGMEA. 10.382 g of dipentaerythritol hexaacrylate (trade name "Kayarad DPHA" Shin Nippon Kayaku Co., Ltd. make (hereinafter referred to as DPHA)) to this solution, silane coupling agent mixed solution (a-1) 4.326 g, 4- 8.652 g of PGMEA 1 mass% solution of t-butylcatechol, 17.303 g of siloxane resin solution (b-1), and 1.500 g of PGMEA 1 mass% solution of BYK-333 [manufactured by Big Chemical Pan Co., Ltd.] It added and stirred. Subsequently, it filtered with a 0.45 micrometer filter and obtained the negative photosensitive resin composition (N-1).
얻어진 네거티브형 감광성 수지 조성물(N-1)을 유리 기판 및 ITO 기판에 각각 스핀코터[미카사(주)제 1H-360S]를 이용하여 임의의 회전수로 스핀코팅했다. 그 후에 이들 기판을 핫플레이트[다이니폰스크린세이조(주)제 SCW-636]를 이용하여 110℃에서 2분간 프리베이킹하여 막두께 1.5㎛인 막을 제작했다.The obtained negative photosensitive resin composition (N-1) was spin-coated at the arbitrary rotation speed on the glass substrate and the ITO board | substrate, respectively using the spin coater (Mica Co., Ltd. product 1H-360S). Thereafter, these substrates were prebaked at 110 ° C. for 2 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Seijo Co., Ltd.) to produce a film having a thickness of 1.5 μm.
제작한 막을 패럴렐 라이트 마스크 얼라이너[캐논(주)제 PLA-501F]를 이용하여 초고압 수은등을 광원으로 하고, 5, 10, 20, 30, 40, 50㎛ 폭의 1대 1의 폭을 갖는 마스크를 사용하여 노광량 200mJ(i선), 마스크갭 100㎛로 노광했다. 그 후에 자동 현상 장치[AD-2000, 타키자와산교(주)제]를 이용하여 0.4질량% 수산화테트라메틸암모늄 수용액 ELM-D[미쓰비시가스카가쿠(주)제]로 90초간 샤워 현상하고, 이어서 물로 30초간 린스했다. 마지막으로 오븐[에스펙(주)제 IHPS-222]을 이용하여 공기중 220℃로 1시간 큐어하여 경화막을 제작했다. 얻어진 경화막에 대해서 상기 방법으로 경도, 접착성, 해상도를 평가했다.A mask having a one-to-one width of 5, 10, 20, 30, 40, 50 µm width using a high pressure mercury lamp as a light source using a parallel light mask aligner (PLA-501F manufactured by Canon Corporation) as a light source. The exposure was performed using an exposure dose of 200 mJ (i line) and a mask gap of 100 µm. Thereafter, using an automatic developing device [AD-2000, manufactured by Takizawa Sangyo Co., Ltd.], a shower development was carried out for 90 seconds with a 0.4 mass% tetramethylammonium hydroxide aqueous solution ELM-D (manufactured by Mitsubishi Chemical Corporation), followed by water. Rinse for 30 seconds. Finally, the cured film was produced by curing at 220 degreeC in air for 1 hour using oven (IHPS-222 by the specification). About the obtained cured film, hardness, adhesiveness, and the resolution were evaluated by the said method.
실시예 2Example 2
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-2)을 사용한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-2)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-2)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-2) was obtained like Example 1 except having used the silane coupling agent mixed solution (a-2) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-2).
실시예 3Example 3
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-3)을 사용한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-3)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-3)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-3) was obtained like Example 1 except having used the silane coupling agent mixed solution (a-3) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-3).
실시예 4Example 4
실란커플링제 혼합 용액(a-1)의 첨가량을 0.433g으로, 및 PGMEA의 첨가량을 38.382g으로 변경한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-4)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-4)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-4) was obtained like Example 1 except having changed the addition amount of the silane coupling agent mixed solution (a-1) into 0.433g, and the addition amount of PGMEA into 38.382g. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-4).
실시예 5Example 5
실란커플링제 혼합 용액(a-1)의 첨가량을 1.730g으로, 및 PGMEA의 첨가량을 37.085g으로 한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-5)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-5)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.A negative photosensitive resin composition (N-5) was obtained in the same manner as in Example 1 except that the addition amount of the silane coupling agent mixed solution (a-1) was 1.730 g and the addition amount of PGMEA was 37.085 g. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-5).
실시예 6Example 6
실란커플링제 혼합 용액(a-1)의 첨가량을 10.382g으로, 및 PGMEA의 첨가량을 28.433g으로 한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-6)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-6)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.A negative photosensitive resin composition (N-6) was obtained in the same manner as in Example 1 except that the addition amount of the silane coupling agent mixed solution (a-1) was 10.382 g and the addition amount of PGMEA was 28.433 g. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-6).
실시예 7Example 7
실란커플링제 혼합 용액(a-1)의 첨가량을 14.708g으로, 및 PGMEA의 첨가량을 24.107g으로 한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-7)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-7)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.A negative photosensitive resin composition (N-7) was obtained in the same manner as in Example 1 except that the addition amount of the silane coupling agent mixed solution (a-1) was 14.708 g and the addition amount of PGMEA was 24.107 g. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-7).
실시예 8Example 8
네거티브형 감광성 수지 조성물(N-1) 30.000g에 트리페닐술포늄트리플루오로메탄술폰산염[상품명 「WPAG-281」 빅케미저팬(주)사제(이하 WPAG-281이라고 기재한다)]을 0.052g 첨가하고, 교반함으로써 네거티브형 감광성 수지 조성물(N-8)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-8)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.0.052 g of triphenylsulfonium trifluoromethane sulfonate (trade name "WPAG-281" manufactured by Big Chemical Pan Co., Ltd.) (hereinafter referred to as WPAG-281) to 30.000 g of a negative photosensitive resin composition (N-1) The negative photosensitive resin composition (N-8) was obtained by adding and stirring. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-8).
실시예 9Example 9
네거티브형 감광성 수지 조성물(N-1) 30.000g에 WPAG-281을 0.208g 첨가하고, 교반함으로써 네거티브형 감광성 수지 조성물(N-9)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-9)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Negative photosensitive resin composition (N-9) was obtained by adding 0.208g of WPAG-281 to 30.000 g of negative photosensitive resin composition (N-1), and stirring. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-9).
실시예 10Example 10
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 32.000g, PGMEA 21.629g에 용해시켰다. 이 용액에 DPHA 8.652g, 실란커플링제 혼합 용액(a-1) 4.326g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 아크릴 수지 용액(b-2) 21.629g, BYK-333의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-10)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-10)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 32.000g, PGMEA 21.629g. DPHA 8.652g, silane coupling agent mixed solution (a-1) 4.326g, PGMEA 1 mass% solution of 4-t-butylcatechol 8.652g, acrylic resin solution (b-2) 21.629g, BYK-333 to this solution 1.500 g of 1 mass% PGMEA solution was added and stirred. Subsequently, filtration was performed with a 0.45 micrometer filter to obtain a negative photosensitive resin composition (N-10). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-10).
실시예 11Example 11
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-2)을 사용한 것 이외에는 실시예 10과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-11)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-11)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-11) was obtained like Example 10 except having used the silane coupling agent mixed solution (a-2) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-11).
실시예 12Example 12
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-3)을 사용한 것 이외에는 실시예 10과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-12)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-12)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.A negative photosensitive resin composition (N-12) was obtained like Example 10 except having used the silane coupling agent mixed solution (a-3) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-12).
실시예 13Example 13
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 32.000g, PGMEA 24.108g에 용해시켰다. 이 용액에 DPHA 10.382g, 실란커플링제 혼합 용액(a-1) 4.326g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 아크릴 수지 용액(b-2) 17.303g, BYK-333의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-13)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-13)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 32.000g, PGMEA 24.108g. DPHA 10.382g, silane coupling agent mixed solution (a-1) 4.326g, PGMEA 1 mass% solution of 4-t-butylcatechol 8.652g, acrylic resin solution (b-2) 17.303g, BYK-333 to this solution 1.500 g of 1 mass% PGMEA solution was added and stirred. Subsequently, it filtered with a 0.45 micrometer filter and obtained the negative photosensitive resin composition (N-13). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-13).
실시예 14Example 14
네거티브형 감광성 수지 조성물(N-13) 30.000g에 WPAG-281을 0.052g 첨가한 것 이외에는 실시예 13과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-14)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-14)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.A negative photosensitive resin composition (N-14) was obtained in the same manner as in Example 13 except that 0.052 g of WPAG-281 was added to 30.000 g of the negative photosensitive resin composition (N-13). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-14).
실시예 15Example 15
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 32.000g, PGMEA 18.917g에 용해시켰다. 이 용액에 DPHA 6.921g, 실란커플링제 혼합 용액(a-1) 4.326g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 아크릴 수지 용액(b-2) 25.955g, BYK-333의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-15)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-15)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 32.000g, PGMEA 18.917g. DPHA 6.921g, silane coupling agent mixed solution (a-1) 4.326g, PGMEA 1 mass% solution of 4-t-butylcatechol 8.652g, acrylic resin solution (b-2) 25.955g, BYK-333 to this solution 1.500 g of 1 mass% PGMEA solution was added and stirred. Subsequently, it filtered with the filter of 0.45 micrometer, and obtained the negative photosensitive resin composition (N-15). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-15).
실시예 16Example 16
황색등 하에서 퀴논디아지드 화합물(q-1) 1.730g을 DAA 6.045g, PGMEA 43.141g에 용해시켰다. 이 용액에 실란커플링제 혼합 용액(a-1) 4.326g, 실록산 수지 용액(b-1) 43.258g, 실리콘계 계면활성제인 BYK-333[빅케미저팬(주)제]의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 포지티브형 감광성 수지 조성물(P-1)을 얻었다.Under yellow lamp, 1.730 g of quinonediazide compound (q-1) was dissolved in 6.045 g of DAA and 43.141 g of PGMEA. 4.326 g of silane coupling agent mixed solution (a-1), 43.258 g of siloxane resin solution (b-1), and 1 mass% PGMEA solution of BYK-333 (manufactured by Big Chemical Pan Co., Ltd.), which are silicone surfactants, were added to this solution. g was added and stirred. Subsequently, it filtered with a 0.45 micrometer filter and obtained positive photosensitive resin composition (P-1).
얻어진 포지티브형 감광성 수지 조성물(P-1)을 유리 기판 및 ITO 기판에 각각 스핀코터[미카사(주)제 1H-360S]를 이용하여 임의의 회전수로 스핀코팅했다. 그 후에 이들 기판을 핫플레이트[다이니폰스크린세이조(주)제 SCW-636]를 이용하여 110℃에서 2분간 프리베이킹하여 막두께 1.5㎛인 막을 제작했다.The obtained positive photosensitive resin composition (P-1) was spin-coated at the arbitrary speed using the spin coater (Mica Co., Ltd. product 1H-360S) on the glass substrate and the ITO board | substrate, respectively. Thereafter, these substrates were prebaked at 110 ° C. for 2 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Seijo Co., Ltd.) to produce a film having a thickness of 1.5 μm.
제작한 막을 패럴렐 라이트 마스크 얼라이너[캐논(주)제 PLA-501F]를 이용하여 초고압 수은등을 광원으로 하고, 5, 10, 20, 30, 40, 50㎛ 폭의 1대 1의 폭을 갖는 마스크를 사용하여 노광량 200mJ(i선), 마스크갭 100㎛로 노광했다. 이 때, 경도 및 접착 측정에 충분한 넓이의 미노광부를 확보하도록 했다. 그 후에 자동 현상 장치[AD-2000, 타키자와산교(주)제]를 이용하여 0.4질량% 수산화테트라메틸암모늄 수용액 ELM-D[미쓰비시가스카가쿠(주)제]로 90초간 샤워 현상하고, 이어서 물로 30초간 린스했다. 이어서, 패럴렐 라이트 마스크 얼라이너[캐논(주)제 PLA-501F]를 이용하여 초고압 수은등을 광원으로 하여 노광량 6000mJ(i선)로 노광했다. 마지막으로 오븐[에스펙(주)제 IHPS-222]을 이용하여 공기 중 220℃로 1시간 큐어해서 경화막을 제작했다. 얻어진 경화막에 대해서 상기 방법으로 경도, 접착성, 해상도를 평가했다.A mask having a one-to-one width of 5, 10, 20, 30, 40, 50 µm width using a high pressure mercury lamp as a light source using a parallel light mask aligner (PLA-501F manufactured by Canon Corporation) as a light source. The exposure was performed using an exposure dose of 200 mJ (i line) and a mask gap of 100 µm. At this time, the unexposed part of the width | variety sufficient for hardness and adhesion measurement was ensured. Thereafter, using an automatic developing device [AD-2000, manufactured by Takizawa Sangyo Co., Ltd.], a shower development was carried out for 90 seconds with a 0.4 mass% tetramethylammonium hydroxide aqueous solution ELM-D (manufactured by Mitsubishi Chemical Corporation), followed by water. Rinse for 30 seconds. Subsequently, using a parallel light mask aligner (PLA-501F manufactured by Canon Corporation), an ultrahigh pressure mercury lamp was used as a light source and exposed at an exposure dose of 6000 mJ (i-ray). Finally, it cured at 220 degreeC in air for 1 hour using the oven (ISP Co., Ltd. product IHPS-222), and produced the cured film. About the obtained cured film, hardness, adhesiveness, and the resolution were evaluated by the said method.
실시예 17Example 17
DAA 6.045g, PGMEA 44.871g에 용해시켰다. 이 용액에 실란커플링제 혼합 용액(a-1) 4.326g, 실록산 수지 용액(b-1) 43.258g, 실리콘계 계면활성제인 BYK-333[빅케미저팬(주)제]의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 열경화성 수지 조성물(U-1)을 얻었다.It was dissolved in 6.045 g of DAA and 44.871 g of PGMEA. 4.326 g of silane coupling agent mixed solution (a-1), 43.258 g of siloxane resin solution (b-1), and 1 mass% PGMEA solution of BYK-333 (manufactured by Big Chemical Pan Co., Ltd.), which are silicone surfactants, were added to this solution. g was added and stirred. Subsequently, filtration was performed with a 0.45 micrometer filter to obtain a thermosetting resin composition (U-1).
얻어진 열경화성 수지 조성물(U-1)을 유리 기판 및 ITO 기판에 각각 스핀코터[미카사(주)제 1H-360S]를 이용하여 임의의 회전수로 스핀코팅하여 막두께 1.5㎛인 막을 제작했다. 그 후에 핫플레이트[다이니폰스크린세이조(주)제 SCW-636]를 이용하여 110℃에서 2분간 프리베이킹했다. 마지막으로 오븐[에스펙(주)제 IHPS-222]을 이용하여 공기 중 260℃로 1시간 큐어해서 경화막을 제작했다. 상기 방법으로 경화 수축률을 산출하고, 경도, 접착성을 평가했다.The obtained thermosetting resin composition (U-1) was spin-coated to a glass substrate and an ITO board | substrate at the arbitrary rotation speed, respectively using the spin coater (Mica Co., Ltd. product 1H-360S), and the film | membrane of 1.5 micrometers in thickness was produced. Thereafter, prebaking was performed at 110 ° C for 2 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Seijo Co., Ltd.). Finally, it cured at 260 degreeC in air for 1 hour using oven (Isps Co., Ltd. make), and produced the cured film. Hardening shrinkage was computed by the said method, and hardness and adhesiveness were evaluated.
비교예 1Comparative Example 1
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 21.618g, PGMEA 38.815g에 용해시켰다. 이 용액에 DPHA 10.382g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 실록산 수지 용액(b-1) 17.303g, 실리콘계 계면활성제인 BYK-333[빅케미저팬(주)제]의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-16)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-16)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 21.618g, PGMEA 38.815g. 10.382 g of DPHA, 8.652 g of PGMEA 1 mass% solution of 4-t-butylcatechol, 17.303 g of siloxane resin solution (b-1), and BYK-333, a silicone-based surfactant (manufactured by Big Chemical Japan Co., Ltd.) 1.500 g of 1 mass% PGMEA solution was added and stirred. Subsequently, it filtered with the filter of 0.45 micrometer, and obtained the negative photosensitive resin composition (N-16). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-16).
비교예 2Comparative Example 2
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-4)을 사용한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-17)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-17)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-17) was obtained like Example 1 except having used the silane coupling agent mixed solution (a-4) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-17).
비교예 3Comparative Example 3
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-5)을 사용한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-18)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-18)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-18) was obtained like Example 1 except having used the silane coupling agent mixed solution (a-5) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-18).
비교예 4Comparative Example 4
네거티브형 감광성 수지 조성물(N-17) 30.000g에 WPAG-281을 0.208g 첨가하고, 교반함으로써 네거티브형 감광성 수지 조성물(N-19)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-19)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Negative photosensitive resin composition (N-19) was obtained by adding 0.208g of WPAG-281 to 30.000 g of negative photosensitive resin composition (N-17), and stirring. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-19).
비교예 5Comparative Example 5
네거티브형 감광성 수지 조성물(N-16) 30.000g에 WPAG-281을 0.208g 첨가하고, 교반함으로써 네거티브형 감광성 수지 조성물(N-20)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-20)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Negative photosensitive resin composition (N-20) was obtained by adding 0.208g of WPAG-281 to 30.000 g of negative photosensitive resin composition (N-16), and stirring. It evaluated like Example 1 using obtained negative photosensitive resin composition (N-20).
비교예 6Comparative Example 6
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 32.000g, PGMEA 25.955g에 용해시켰다. 이 용액에 DPHA 8.652g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 아크릴 수지 용액(b-2) 21.629g, BYK-333의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-21)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-21)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 32.000g, PGMEA 25.955g. 8.652g of DPHA, 8.652g of 1 mass% PGMEA solution of 4-t-butylcatechol, 21.629g of acrylic resin solution (b-2), and 1.500g of PGMEA 1 mass% solution of BYK-333 were added and stirred to this solution. . Subsequently, it filtered with a 0.45 micrometer filter and obtained the negative photosensitive resin composition (N-21). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-21).
비교예 7Comparative Example 7
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 32.000g, PGMEA 28.434g에 용해시켰다. 이 용액에 DPHA 10.382g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 아크릴 수지 용액(b-2) 17.303g, BYK-333의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-22)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-22)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 32.000g, PGMEA 28.434g. 10.382 g of DPHA, 8.652 g of PGMEA 1 mass% solution of 4-t-butylcatechol, 17.303 g of acrylic resin solution (b-2), and 1.500 g of PGMEA 1 mass% solution of BYK-333 were added to the solution and stirred. . Subsequently, it filtered with the filter of 0.45 micrometer, and obtained the negative photosensitive resin composition (N-22). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-22).
비교예 8Comparative Example 8
황색등 하에서 IC907 1.557g, EK 0.173g을 DAA 32.000g, PGMEA 23.243g에 용해시켰다. 이 용액에 DPHA 6.921g, 4-t-부틸카테콜의 PGMEA 1질량% 용액 8.652g, 아크릴 수지 용액(b-2) 25.955g, BYK-333의 PGMEA 1질량% 용액 1.500g을 첨가하여 교반했다. 이어서 0.45㎛의 필터로 여과를 행하여 네거티브형 감광성 수지 조성물(N-23)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-23)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Under yellow light, IC907 1.557g, EK 0.173g was dissolved in DAA 32.000g, PGMEA 23.243g. To this solution, 6.921 g of DPHA, 8.652 g of PGMEA 1 mass% solution of 4-t-butylcatechol, 25.955 g of acrylic resin solution (b-2), and 1.500 g of PGMEA 1 mass% solution of BYK-333 were added and stirred. . Subsequently, it filtered with a 0.45 micrometer filter and obtained the negative photosensitive resin composition (N-23). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-23).
비교예 9Comparative Example 9
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-4)을 사용한 것 이외에는 실시예 10과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-24)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-24)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-24) was obtained like Example 10 except having used the silane coupling agent mixed solution (a-4) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-24).
비교예 10Comparative Example 10
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-5)을 사용한 것 이외에는 실시예 10과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-25)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-25)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-25) was obtained like Example 10 except having used the silane coupling agent mixed solution (a-5) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-25).
비교예 11Comparative Example 11
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-6)을 사용한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-26)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-26)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.The negative photosensitive resin composition (N-26) was obtained like Example 1 except having used the silane coupling agent mixed solution (a-6) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-26).
비교예 12Comparative Example 12
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-7)을 사용한 것 이외에는 실시예 1과 마찬가지로 행하여 네거티브형 감광성 수지 조성물(N-27)을 얻었다. 얻어진 네거티브형 감광성 수지 조성물(N-27)을 이용하여 실시예 1과 마찬가지로 해서 평가를 행했다.Negative photosensitive resin composition (N-27) was obtained like Example 1 except having used the silane coupling agent mixed solution (a-7) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 1 using obtained negative photosensitive resin composition (N-27).
비교예 13Comparative Example 13
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-7)을 사용한 것 이외에는 실시예 16과 마찬가지로 행하여 포지티브형 감광성 수지 조성물(P-2)을 얻었다. 얻어진 포지티브형 감광성 수지 조성물(P-2)을 이용하여 실시예 16과 마찬가지로 해서 평가를 행했다.Positive photosensitive resin composition (P-2) was obtained like Example 16 except having used the silane coupling agent mixed solution (a-7) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 16 using obtained positive photosensitive resin composition (P-2).
비교예 14Comparative Example 14
실란커플링제 혼합 용액(a-1) 대신에 실란커플링제 혼합 용액(a-7)을 사용한 것 이외에는 실시예 17과 마찬가지로 행하여 열경화성 수지 조성물(U-2)을 얻었다. 얻어진 열경화성 수지 조성물(U-2)을 이용하여 실시예 17과 마찬가지로 해서 평가를 행했다.The thermosetting resin composition (U-2) was obtained like Example 17 except having used the silane coupling agent mixed solution (a-7) instead of the silane coupling agent mixed solution (a-1). It evaluated like Example 17 using obtained thermosetting resin composition (U-2).
본 발명의 실란커플링제를 첨가하는 수지 조성물의 종류에 따라 경화 수축률과 평탄화능에 어떤 차가 있는지를 비교하기 위해서 이하의 참고 실험을 행했다.The following reference experiment was done in order to compare what kind of difference exists in a cure shrinkage rate and planarization capability with the kind of resin composition which adds the silane coupling agent of this invention.
참고예 1Reference Example 1
네거티브형 감광성 수지 조성물{N-1[실란커플링제(a-1)를 사용]}을 규소 웨이퍼 기판에 스핀코터[미카사(주)제 1H-360S]를 이용하여 임의의 회전수로 스핀코팅했다. 그 후에 핫플레이트[다이니폰스크린세이조(주)제 SCW-636]를 이용하여 110℃에서 2분간 프리베이킹하여 막두께 1.5㎛인 막을 제작했다. 제작한 막을 패럴렐 라이트 마스크 얼라이너[캐논(주)제 PLA-501F]를 이용하여 초고압 수은등을 광원으로 해 노광량 200mJ(i선)로 노광했다. 그 후에 자동 현상 장치[AD-2000, 타키자와산교(주)제]를 이용하여 0.4질량% 수산화테트라메틸암모늄 수용액 ELM-D[미쓰비시가스카가쿠(주)제]로 90초간 샤워 현상하고, 이어서 물로 30초간 린스했다. 마지막으로 오븐[에스펙(주)제 IHPS-222]을 이용하여 공기 중 220℃에서 1시간 큐어해서 경화막을 제작했다. 상기 방법으로 경화 수축률을 산출하고, 평탄화능을 평가했다. 그 결과, 경화 수축률은 11%이고, 평탄화능은 양호했다.Negative photosensitive resin composition {N-1 [using a silane coupling agent (a-1)]} was spin-coated to a silicon wafer substrate at arbitrary rotation speeds using a spin coater (1H-360S by Mikasa Co., Ltd.). . Thereafter, the film was prebaked at 110 ° C. for 2 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Seijo Co., Ltd.) to produce a film having a thickness of 1.5 μm. Using the parallel light mask aligner (PLA-501F by Canon Co., Ltd.), the produced film was exposed to an exposure dose of 200 mJ (i-ray) using an ultrahigh pressure mercury lamp as a light source. Thereafter, using an automatic developing device [AD-2000, manufactured by Takizawa Sangyo Co., Ltd.], a shower development was carried out for 90 seconds with a 0.4 mass% tetramethylammonium hydroxide aqueous solution ELM-D (manufactured by Mitsubishi Chemical Corporation), followed by water. Rinse for 30 seconds. Finally, the cured film was produced by curing at 220 degreeC in air for 1 hour using oven (IHPS-222 by the specification). Curing shrinkage rate was computed by the said method, and planarization ability was evaluated. As a result, the curing shrinkage was 11%, and the planarization performance was good.
네거티브형 감광성 수지 조성물(N-1) 대신에 (N-27)을 사용한 것 이외에는 상기와 마찬가지로 해서 평가를 행했다. 그 결과, 경화 수축률은 9%이고, 평탄화능은 양호했다.It evaluated like the above except having used (N-27) instead of the negative photosensitive resin composition (N-1). As a result, the curing shrinkage was 9%, and the planarization performance was good.
즉, 네거티브형 감광성 수지 조성물에 대해서는 종래의 실란커플링제 대신에 본 발명의 실란커플링제(a-1)를 첨가함으로써 경화 수축률, 평탄화능 모두 거의 저하시키는 일은 없었다.That is, about the negative photosensitive resin composition, hardening shrinkage rate and planarization ability hardly decreased by adding the silane coupling agent (a-1) of this invention instead of the conventional silane coupling agent.
참고예 2Reference Example 2
포지티브형 감광성 수지 조성물{P-1[실란커플링제(a-1)를 사용]}을 규소 웨이퍼 기판에 스핀코터[미카사(주)제 1H-360S]를 이용하여 임의의 회전수로 스핀코팅하여 막두께 1.5㎛인 막을 제작했다. 그 후에 핫플레이트[다이니폰스크린세이조(주)제 SCW-636]를 이용하여 110℃에서 2분간 프리베이킹했다. 자동 현상 장치[AD-2000, 타키자와산교(주)제]를 이용하여 0.4질량% 수산화테트라메틸암모늄 수용액 ELM-D[미쓰비시가스카가쿠(주)제]로 90초간 샤워 현상하고, 이어서 물로 30초간 린스했다. 이어서, 패럴렐 라이트 마스크 얼라이너[캐논(주)제 PLA-501F]를 이용하여 초고압 수은등을 광원으로 해 노광량 6000mJ(i선)로 노광했다. 마지막으로 오븐[에스펙(주)제 IHPS-222]을 이용하여 공기 중 220℃에서 1시간 큐어해서 경화막을 제작했다. 상기 방법으로 경화 수축률을 산출하고, 평탄화능을 평가했다. 그 결과, 경화 수축률은 16%이고, 평탄화능은 불량했다.The positive photosensitive resin composition {P-1 [using the silane coupling agent (a-1)]} was spin-coated on a silicon wafer substrate at an arbitrary rotation speed using a spin coater (manufactured by Mikasa Co., Ltd. 1H-360S). A film having a thickness of 1.5 µm was produced. Thereafter, prebaking was performed at 110 ° C for 2 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Seijo Co., Ltd.). 90 seconds of shower development with 0.4 mass% tetramethylammonium hydroxide aqueous solution ELM-D (made by Mitsubishi Chemical Co., Ltd.) was carried out using the automatic developing apparatus [AD-2000, product made by Takizawa Sangyo Co., Ltd.], and it was then made to water for 30 seconds. Rinse. Subsequently, an ultrahigh pressure mercury lamp was used as a light source using the parallel light mask aligner (PLA-501F by Canon Co., Ltd.), and it exposed by the exposure amount 6000mJ (i line). Finally, the cured film was produced by curing at 220 degreeC in air for 1 hour using oven (IHPS-222 by the specification). Curing shrinkage rate was computed by the said method, and planarization ability was evaluated. As a result, the curing shrinkage was 16%, and the planarization performance was poor.
포지티브형 감광성 수지 조성물(P-1) 대신에 (P-2)를 사용한 것 이외에는 상기와 마찬가지로 해서 평가를 행했다. 그 결과, 경화 수축률은 13%이고, 평탄화능은 양호했다.It evaluated like the above except having used (P-2) instead of positive type photosensitive resin composition (P-1). As a result, the curing shrinkage was 13%, and the planarization performance was good.
즉, 포지티브형 감광성 수지 조성물에 대해서는 종래의 실란커플링제 대신에 본 발명의 실란커플링제(a-1)를 첨가함으로써 특히 평탄화 성능을 저하시키는 경향이 보였다.That is, the positive photosensitive resin composition showed a tendency to lower planarization performance especially by adding the silane coupling agent (a-1) of this invention instead of the conventional silane coupling agent.
참고예 3Reference Example 3
열경화성 수지 조성물{U-1[실란커플링제(a-1)를 사용]}을 규소 웨이퍼 기판에 스핀코터[미카사(주)제 1H-360S]를 이용하여 임의의 회전수로 스핀코팅하여 막두께 1.5㎛인 막을 제작했다. 그 후에 핫플레이트[다이니폰스크린세이조(주)제 SCW-636]를 이용하여 110℃에서 2분간 프리베이킹했다. 마지막으로 오븐[에스펙(주)제 IHPS-222]을 이용하여 공기 중 260℃에서 1시간 큐어해서 경화막을 제작했다. 상기 방법으로 경화 수축률을 산출하고, 평탄화능을 평가했다. 그 결과, 경화 수축률은 18%이고, 평탄화능은 불량했다.The thermosetting resin composition {U-1 [using a silane coupling agent (a-1)]} was spin-coated on a silicon wafer substrate at an arbitrary rotation speed using a spin coater (manufactured by Mikasa Co., Ltd. 1H-360S) to obtain a film thickness. A film having a thickness of 1.5 mu m was produced. Thereafter, prebaking was performed at 110 ° C for 2 minutes using a hot plate (SCW-636 manufactured by Dainippon Screen Seijo Co., Ltd.). Finally, by using an oven (ISP Co., Ltd. product IHPS-222), it cured at 260 degreeC in air for 1 hour, and produced the cured film. Curing shrinkage rate was computed by the said method, and planarization ability was evaluated. As a result, the curing shrinkage was 18% and the planarization performance was poor.
열경화성 수지 조성물(U-1) 대신에 (U-2)를 사용한 것 이외에는 상기와 마찬가지로 해서 평가를 행했다. 그 결과, 경화 수축률은 14%이고, 평탄화능은 양호했다.It evaluated like the above except having used (U-2) instead of the thermosetting resin composition (U-1). As a result, the curing shrinkage was 14%, and the planarization performance was good.
즉, 열경화성 수지 조성물에 대해서는 종래의 실란커플링제 대신에 본 발명의 실란커플링제(a-1)를 첨가함으로써 경화 수축률 및 평탄화 성능을 저하시키는 경향이 보였다.That is, the thermosetting resin composition showed the tendency to lower hardening shrinkage rate and planarization performance by adding the silane coupling agent (a-1) of this invention instead of the conventional silane coupling agent.
<산업상의 이용 가능성>Industrial availability
본 발명은 실란커플링제, 그것을 함유하는 네거티브형 감광성 수지 조성물, 그것을 사용한 경화막 및 그것을 갖는 터치 패널 장치에 적합하게 사용된다.The present invention is suitably used for a silane coupling agent, a negative photosensitive resin composition containing the same, a cured film using the same, and a touch panel device having the same.
Claims (7)
(각 R1은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기를 나타낸다. 알킬기는 치환기를 더 갖고 있어도 된다. n은 0 또는 1을 나타낸다. R2는 탄소수 3~30인 3가의 유기기를 나타낸다. R3은 각각 같아도 되고 달라도 되며, 탄소수 1~6인 알킬기, 탄소수 1~6인 알콕시기, 페닐기, 히드록실기 및 페녹시기를 나타낸다. 또한, R3의 이들 기 중 히드록실기 이외에는 치환기를 더 갖고 있어도 된다)The silane coupling agent represented by General formula (1).
(Each R 1 may be the same as or different from each other, and represents an alkyl group having 1 to 6 carbon atoms. The alkyl group may further have a substituent. N represents 0 or 1. R 2 represents a trivalent organic group having 3 to 30 carbon atoms. . R 3 are each gatahdo and are different, and having 1 to 6 carbon atoms in the alkyl group, having 1 to 6 represents an alkoxy group, a phenyl group, a hydroxyl group and a phenoxy group. in addition, the hydroxide of which group of the R 3 hydroxyl groups other than the substituent You may have more)
상기 일반식(1)에 있어서 n=0인 것을 특징으로 하는 실란커플링제.The method of claim 1,
N = 0 in the said General formula (1), The silane coupling agent characterized by the above-mentioned.
(A) 알칼리 가용성 수지는 에틸렌성 불포화기를 갖는 실록산 수지인 것을 특징으로 하는 네거티브형 감광성 수지 조성물.The method of claim 3, wherein
(A) Alkali-soluble resin is a siloxane resin which has an ethylenically unsaturated group, The negative photosensitive resin composition characterized by the above-mentioned.
(A) 알칼리 가용성 수지는 에틸렌성 불포화기를 갖는 아크릴 수지인 것을 특징으로 하는 네거티브형 감광성 수지 조성물.The method of claim 3, wherein
(A) Alkali-soluble resin is an acrylic resin which has an ethylenically unsaturated group, The negative photosensitive resin composition characterized by the above-mentioned.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-060298 | 2010-03-17 | ||
JP2010060298 | 2010-03-17 | ||
PCT/JP2011/055680 WO2011114995A1 (en) | 2010-03-17 | 2011-03-10 | Silane coupling agent, negative-type photosensitive resin composition, curable film and touch panel component |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130061124A true KR20130061124A (en) | 2013-06-10 |
KR101839397B1 KR101839397B1 (en) | 2018-03-16 |
Family
ID=44649090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127024097A KR101839397B1 (en) | 2010-03-17 | 2011-03-10 | Silane coupling agent, negative-type photosensitive resin composition, curable film and touch panel component |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP5459315B2 (en) |
KR (1) | KR101839397B1 (en) |
CN (1) | CN102803274B (en) |
SG (1) | SG184100A1 (en) |
TW (1) | TWI505031B (en) |
WO (1) | WO2011114995A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103765254B (en) * | 2011-08-29 | 2016-04-06 | 东丽株式会社 | Colored resin composition and resin black matrix substrate |
JP6024375B2 (en) * | 2011-11-21 | 2016-11-16 | 東洋インキScホールディングス株式会社 | Resin composition, protective film using the same, and insulating film for touch panel |
TWI567498B (en) | 2012-04-06 | 2017-01-21 | Az電子材料盧森堡有限公司 | Negative-type photosensitive siloxane composition |
TWI567497B (en) * | 2012-04-06 | 2017-01-21 | Az電子材料盧森堡有限公司 | Negative-type photosensitive siloxane composition |
WO2014045856A1 (en) * | 2012-09-21 | 2014-03-27 | 日本合成化学工業株式会社 | Laminate and use thereof |
JP6022870B2 (en) * | 2012-09-25 | 2016-11-09 | 旭化成株式会社 | Photosensitive resin composition |
JP6430098B2 (en) * | 2013-01-15 | 2018-11-28 | 日立化成株式会社 | Photosensitive transparent material for protective film of touch panel electrode |
KR102145232B1 (en) * | 2013-02-14 | 2020-08-18 | 도레이 카부시키가이샤 | Negative-type photosensitive coloring composition, cured film, light-shielding pattern for touch panel, and touch panel manufacturing method |
JP6454954B2 (en) * | 2013-07-17 | 2019-01-23 | 東レ株式会社 | Composition, antireflection layer using the same, method for forming the same, glass having the same, and solar cell module |
JP6070589B2 (en) | 2014-01-24 | 2017-02-01 | 信越化学工業株式会社 | Silane coupling agent and method for producing the same, primer composition, and coating composition |
KR101418026B1 (en) * | 2014-02-06 | 2014-08-08 | 동우 화인켐 주식회사 | Thermosetting ink composition |
KR102053369B1 (en) | 2014-06-20 | 2019-12-06 | 오사카 유키가가쿠고교 가부시키가이샤 | Photosensitive composition and cured film of same |
CN104793384B (en) * | 2015-04-03 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of ultra-thin LCD and preparation method thereof |
CN105237037A (en) * | 2015-11-24 | 2016-01-13 | 烟台顺隆化工科技有限公司 | Water-proofing agent for natural stone building |
CN109476898B (en) * | 2016-07-28 | 2021-07-06 | 日产化学株式会社 | Resin composition |
CN111373325B (en) * | 2017-11-21 | 2023-10-17 | 东丽株式会社 | Silicone resin composition, cured film, and display device |
JP2019194709A (en) * | 2019-06-05 | 2019-11-07 | 日立化成株式会社 | Method for manufacturing base material for touch panel with cured film, photosensitive resin composition, photosensitive element and touch panel |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002062654A (en) * | 2000-08-16 | 2002-02-28 | Fuji Photo Film Co Ltd | Positive type photoresist composition |
TW584785B (en) * | 2001-07-04 | 2004-04-21 | Showa Denko Kk | Curable flame-retardant resist composition and cured product thereof |
JP4817710B2 (en) | 2005-05-16 | 2011-11-16 | 旭化成イーマテリアルズ株式会社 | Silane coupling agent |
DE102005056622A1 (en) * | 2005-11-25 | 2007-05-31 | Merck Patent Gmbh | Modified zinc oxide nanoparticles are formed by method placing precursor and silica modifier on organic solvent and growing until spectral absorption edge reaches the desired value |
JP5276003B2 (en) * | 2007-09-28 | 2013-08-28 | 東京応化工業株式会社 | Copolymer, resin composition, display panel spacer, planarization film, thermosetting protective film, microlens, and copolymer production method |
WO2009096050A1 (en) * | 2008-01-28 | 2009-08-06 | Toray Industries, Inc. | Siloxane resin compositions |
DE102008057684A1 (en) * | 2008-11-17 | 2010-05-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dialkoxy- or dihydroxyphenyl radicals containing silanes, adhesives prepared therefrom and methods for preparing the silanes and the adhesives |
-
2011
- 2011-03-10 JP JP2011526326A patent/JP5459315B2/en active Active
- 2011-03-10 KR KR1020127024097A patent/KR101839397B1/en active IP Right Grant
- 2011-03-10 SG SG2012068672A patent/SG184100A1/en unknown
- 2011-03-10 WO PCT/JP2011/055680 patent/WO2011114995A1/en active Application Filing
- 2011-03-10 CN CN201180014187.5A patent/CN102803274B/en active Active
- 2011-03-15 TW TW100108634A patent/TWI505031B/en active
Also Published As
Publication number | Publication date |
---|---|
TW201142504A (en) | 2011-12-01 |
TWI505031B (en) | 2015-10-21 |
KR101839397B1 (en) | 2018-03-16 |
SG184100A1 (en) | 2012-10-30 |
WO2011114995A1 (en) | 2011-09-22 |
JP5459315B2 (en) | 2014-04-02 |
CN102803274A (en) | 2012-11-28 |
CN102803274B (en) | 2015-07-29 |
JPWO2011114995A1 (en) | 2013-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101839397B1 (en) | Silane coupling agent, negative-type photosensitive resin composition, curable film and touch panel component | |
KR101643262B1 (en) | Siloxane resin composition and protective film for touch panel using same | |
JP5867083B2 (en) | Negative photosensitive resin composition and protective film using the same | |
JP5504689B2 (en) | Negative photosensitive resin composition and touch panel material using the same | |
JP5423004B2 (en) | Negative photosensitive resin composition and touch panel material using the same | |
JP5327345B2 (en) | Negative photosensitive resin composition, cured film, and touch panel member. | |
WO2011129312A1 (en) | Negative photosensitive resin composition, cured film, and member for touch panel | |
TWI848910B (en) | Negative photosensitive resin composition and hardened film | |
JP6489288B1 (en) | Transparent resin composition, transparent film and transparent resin-coated glass substrate | |
JP7172598B2 (en) | Siloxane resin composition, cured film and display device | |
JP2022064302A (en) | Negative siloxane resin composition, cured film, and element | |
JP2018146958A (en) | Negative type photosensitive resin composition and cured film using the same | |
JP2018120069A (en) | Negative photosensitive resin composition, cured film and touch panel member | |
JP6458902B1 (en) | Photosensitive siloxane resin composition, cured film and touch panel member | |
JP2020100819A (en) | Resin composition, cured film and method for producing the same | |
JP2023137277A (en) | Photosensitive resin composition and cured film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |