KR20130046913A - Organic light emitting diode device and mehtod for fabricating the same - Google Patents

Abstract

PURPOSE: An organic light emitting device and a manufacturing method thereof are provided to prevent a short between wires by forming a dummy bank structure in a non-emission part of a substrate. CONSTITUTION: A dummy bank pattern(123b) is formed on the upper side of a passivation layer. An organic light emitting layer(125) is formed on the upper sides of a bank pattern, an anode electrode, and the passivation layer. A cathode electrode(127) is formed on the upper side of the organic light emitting layer. A black matrix is formed on the second substrate. A color filter layer(155) is formed on the second substrate.

Description

Organic electroluminescent device and its manufacturing method {ORGANIC LIGHT EMITTING DIODE DEVICE AND MEHTOD FOR FABRICATING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device (OLED). More particularly, the present invention relates to a non-light emitting unit in which a metal tray used in an organic light emitting layer deposition process in contact with an organic light emitting diode is manufactured. The present invention relates to an organic light emitting device capable of improving a yield of a panel by adding a bank to prevent shorts due to scratching of a back plane of a substrate, and a method of manufacturing the same.

In general, an organic light emitting diode (OLED) has a structure in which an organic light emitting layer in the form of a functional thin film is inserted between an anode (anode) and a cathode (cathode), and holes are injected from an anode and electrons are injected from a cathode. The device emits light by being recombined with electrons and holes in the organic light emitting layer.

The organic light emitting device is classified into a passive matrix (PM) type and a passive matrix active matrix (AM) type according to the driving method.

In the passive matrix OLED (PM-OLED), the anode and the cathode are arranged in columns and low, respectively, so that the cathode is supplied with a scanning signal from a row driving circuit, and only one of the plurality of rows is supplied. Is selected.

A data signal is input to each pixel in the column driving circuit. On the other hand, the active matrix OLED (AM-OLED) is a display device for controlling a signal input for each pixel by using a thin film transistor (Tin Film Transistor), which is suitable for processing a large amount of signals to implement a video It is used a lot.

At present, a top-independent RGB independent deposition method is widely used to implement AM-OLED having low power consumption and high bright room contrast ratio (CR) characteristics. The RGB independent deposition method requires patterning for each luminescent color using a fine metal mask in fabrication. Due to the precision in aligning the metal mask and the deflection phenomenon caused by the increase in the mask size, application to a large size This is difficult.

The inkjet method, which forms one of the other RGB independent light emitting layers, has the advantage of using a large-sized substrate. However, the material property of the soluble material is worse than that of the deposition material.

In addition, there is a laser transfer method which independently transfers a light emitting layer formed on a donor film using a laser, but has a weak point in the life of an OLED element.

Considering fairness, yield, etc., the WOLED-CF method employing a color filter in white OLEDs has received much attention. The white organic electroluminescent device forms all of a plurality of organic light emitting materials emitting red, green, and blue, respectively, in the organic light emitting layer, or all of a plurality of organic light emitting materials emitting red, green, and blue, respectively, which are complementary to each other. Or by forming pairs of two organic light emitting materials that are complementary to each other.

In order to fabricate the existing organic light emitting device including the white OLED, it is necessary to form a thin film transistor that controls the input signal for each pixel, and components such as an anode (anode), an organic light emitting layer, and a cathode (cathode).

Among the above components, when the organic light emitting layer and the cathode are formed, the organic material layer and the metal layer are deposited on the lower side with the substrate inverted. In this case, in order to deposit the organic layer and the metal layer on the light emitting portion of the substrate, a non-light emitting portion of the substrate, for example, a metal tray (not shown) capable of supporting a backplane of the substrate is necessary. do.

However, when the metal tray supports the backplane of the substrate for depositing the organic material layer and the metal layer, since the non-light emitting portion of the substrate does not have a separate bank, it comes into contact with the edge of the substrate due to its subsidiary periphery. Damage to the Vdd wiring provided in the non-light emitting portion of the substrate, and the Vss wiring and short (short) is likely to occur, it is difficult to secure the yield.

Accordingly, the present invention is to solve the problems of the prior art, an object of the present invention is a dummy bank (metal dummy) that is used in the organic light emitting layer deposition process in the manufacturing of the organic light emitting device (dummy bank) in contact with the non-light emitting portion (dummy bank) The present invention provides an organic light emitting device and a method of manufacturing the same, which can improve the yield of a panel by preventing a short between the lines provided in the non-light emitting part by scratching a back plane of the substrate. have.

The organic light emitting device according to the present invention for achieving the above object includes a first substrate and a second substrate in which the light emitting portion and the non-light emitting portion are defined; A thin film transistor formed on the light emitting part of the first substrate and composed of a gate electrode, an active pattern, a source electrode, and a drain electrode; A passivation layer formed on an entire surface of the first substrate including the thin film transistor and exposing the thin film transistor; An anode electrode formed on the passivation layer and electrically connected to the thin film transistor; A bank pattern formed on the anode and the passivation layer to separate each sub-pixel independently; A dummy bank pattern formed on the passivation layer positioned on the non-light emitting portion of the first substrate; An organic light emitting layer formed on the bank pattern, the anode electrode, and the passivation layer on the light emitting part of the first substrate; A cathode electrode formed on the organic light emitting layer; A black matrix formed on the second substrate; A color filter layer formed on a second substrate between the black matrices; And a seal pattern for bonding the first substrate and the second substrate together.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, including: providing a first substrate and a second substrate on which a light emitting unit and a non-light emitting unit are defined; Forming a thin film transistor including a gate electrode, an active pattern, a source electrode, and a drain electrode in a light emitting portion of the first substrate; Forming a passivation layer exposing the thin film transistor on the entire surface of the first substrate including the thin film transistor; Forming an anode electrode on the passivation layer, the anode electrode being electrically connected to the thin film transistor; Forming a dummy bank pattern on the passivation layer on the non-light emitting portion of the first substrate together with a bank pattern that separates each sub-pixel independently on the anode and the passivation layer; Allowing the dummy bank pattern to be in contact with and supported on an upper portion of the metal train while inverting the first substrate; Forming an organic light emitting layer on the bank pattern, the anode electrode, and the passivation layer on the light emitting part of the first substrate using the metal tray as a mask; Forming a cathode on the organic light emitting layer; Forming a black matrix on the second substrate; Forming a color filter layer on a second substrate between the black matrices; And forming a seal pattern for bonding the first substrate and the second substrate to each other.

According to the organic light emitting device and the method of manufacturing the same according to the present invention has the following effects.

According to the organic light emitting device according to the present invention and a method of manufacturing the same, a dummy bank (dummy bank) in the non-light emitting portion of the substrate is in contact with the metal tray (metal tray) used as a mask during the organic light emitting layer deposition process in manufacturing the organic light emitting device By forming the structure, a short circuit between the wirings, for example, the Vdd wiring and the Vss wiring due to the scratching of the back plane of the substrate can be prevented, thereby improving the yield of the panel.

According to the present invention, a pointed contact protrusion is formed on the upper surface of the metal tray supporting the substrate in contact with the dummy bank pattern provided in the non-light emitting portion of the substrate, or flat contact protrusions are provided to be spaced apart from each other. By reducing the surface area in contact with the pattern, the problem caused by the metal tray contacting the substrate as in the past does not occur, such as a short between the Vdd wiring line and the Vss wiring.

1 is a circuit diagram illustrating a pixel circuit of an organic light emitting diode according to the present invention.
2 is a plan view schematically showing a planar configuration of an organic light emitting device according to the present invention.
FIG. 3 is a schematic cross-sectional view of an organic light emitting diode according to line III-III of FIG. 2.
4A to 4I are cross-sectional views illustrating a process of manufacturing the organic light emitting diode according to the present invention.
FIG. 5 is a perspective view schematically illustrating a substrate, a metal tray, and a deposition apparatus in the deposition of an organic light emitting layer and a metal layer in the manufacture of an organic light emitting device according to the present invention.
FIG. 6 is a schematic cross-sectional view of a metal tray provided with contact protrusions having a pointed shape as another example of a metal tray used as a mask in manufacturing an organic light emitting diode according to the present invention.
FIG. 7 is a schematic cross-sectional view of a metal tray provided with spaced apart flat projections as another embodiment of a metal tray used as a mask in manufacturing an organic light emitting device according to the present invention.

Hereinafter, an organic electroluminescent device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Like reference numerals in the drawings refer to like elements. In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

1 is a circuit diagram illustrating a pixel circuit of an organic light emitting diode according to the present invention.

Referring to FIG. 1, the organic light emitting diode according to the present invention includes a plurality of pixels connected to a plurality of signal lines and arranged in a substantially matrix form, and each pixel has a pixel circuit.

Each pixel includes a Vdd power line Vdd serving as a driving power source of the data line DL, the scan line (ie, the gate line GL), and the organic light emitting diode (OLED).

The pixel circuit is electrically connected to these data lines DL, the scan lines GL, and the Vdd power lines Vdd, and controls the light emission of the organic light emitting diode OLED.

Each pixel includes a switching element Ts, at least two thin film transistors T of the driving element Td, a capacitor unit Cst, and an organic light emitting element OLED.

The switching element Ts is turned on / off by a scan signal applied to the scan line GL to store a data signal applied to the data line DL by the storage capacitor Cst and the driving element Td. To pass on. In this case, the switching device is not necessarily limited to only the switching device as shown in FIG. 3, and may include a switching circuit including a plurality of thin film transistors and capacitors, and compensates the Vth value of the driving device Td. A circuit or a circuit for compensating for the voltage drop of the Vdd power line Vdd may be further provided.

The driving device Td determines the amount of current flowing into the organic light emitting device OLED according to the data signal transmitted through the switching device Ts.

The capacitor unit Cst stores a data signal transmitted through the switching element Ts for one frame.

In the circuit diagram according to FIG. 1, the driving device Td and the switching device Ts are illustrated as PMOS TFTs, but the present invention is not necessarily limited thereto, and at least one of the driving device Td and the switching device Ts may be used. Can be formed of an NMOS TFT, of course. The number of thin film transistors and capacitors as described above is not necessarily limited thereto, and of course, a larger number of thin film transistors and capacitors may be provided.

2 is a plan view schematically showing a planar configuration of an organic light emitting device according to the present invention.

Referring to FIG. 2, a gate driver GD is configured at one side of the substrate 101, and data drivers DD are configured at both sides of the substrate not parallel to the gate driver GD.

The common electrode 139 is formed on the other side of the substrate 101 parallel to the gate driver GD. In this case, the common electrode 139 serves to maintain a potential of the cathode electrode 127 by applying a common voltage to the cathode electrode (cathode electrode) 127.

Hereinafter, an organic EL device according to the present invention will be described with reference to FIG. 3.

FIG. 3 is a schematic cross-sectional view of an organic light emitting diode according to line III-III of FIG. 2.

Referring to FIG. 3, in the organic light emitting diode according to the present invention, the first substrate 101 and the second substrate 151 defined by the light emitting unit P and the non-light emitting unit NP are disposed to face each other. The first and second substrates 101 and 151 are bonded to each other by seal patterns (not shown) formed at edge portions of the first and second substrates 101 and 151.

Here, a plurality of thin film transistors T, for example, a switching element Ts and a driving element Td, are formed on each of the sub-pixels on the first substrate 101.

The thin film transistor T formed on each of the sub-pixels on the first substrate 101 has a gate electrode 103, a gate insulating film 105 formed on the gate electrode 103, an active pattern 107a, and a source electrode ( 113a) and a drain electrode 113b, and the drain electrode 113b is electrically connected to the anode electrode 121a formed independently for each subpixel.

In addition, bank patterns 123a are formed on the anode electrode 121a electrically connected to the drain electrode 113b provided for each subpixel.

In addition, a dummy bank pattern 123b is formed in the non-light emitting portion NP of the first substrate 101, which is a metal tray used as a mask in an organic light emitting layer deposition process in manufacturing an organic light emitting diode. Is formed to prevent shorts between the wirings, for example, the Vdd wiring and the Vss wiring, due to scratching of the back plane of the substrate. In this case, the dummy bank pattern 123b is formed along the periphery of the light emitting unit P in an area of the non-light emitting unit NP which is located outside the light emitting unit P.

In addition, the organic light emitting layer 125 and the cathode electrode 127 are formed on the entire surface of the light emitting part P of the first substrate 101 including the bank pattern 123a.

In this case, the organic light emitting layer 125, a hole injection layer (not shown), a hole transport layer (not shown), an electron transport layer (not shown) and an electron injection layer (not shown) sequentially stacked from the anode electrode 121a It consists of.

In addition, the cathode electrode 127 is formed of a thin thickness capable of transfusing aluminum (Al), silver (Ag), or an alloy thereof.

Meanwhile, a black matrix 153 is formed between the light emitting parts on the second substrate 151, and red, blue, and green color filter layers 155 are formed in the light emitting area.

In addition, the black matrix 153 of the second substrate 151 is bonded to a portion of the cathode electrode 127 positioned on the bank pattern 123a of the first substrate 101 so as to be connected to the first substrate 101. The second substrate 151 is bonded.

Meanwhile, a method of manufacturing an organic light emitting display device according to the present invention will be described with reference to FIG. 4.

4A to 4I are cross-sectional views illustrating a process of manufacturing the organic light emitting diode according to the present invention.

FIG. 5 is a perspective view schematically illustrating a substrate, a metal tray, and a deposition apparatus in the deposition of an organic light emitting layer and a metal layer in the manufacture of an organic light emitting device according to the present invention.

As shown in FIG. 4A, any one of aluminum (Al), aluminum neodium (AlNd), and molybdenum (Mo) on the transparent glass substrate 101 defined as the light emitting part P and the non-light emitting part NP. Alternatively, two or more metals or alloys are deposited by a sputtering process, and then patterned by a photolithography process and an etching process to form the gate electrode 103 and the gate electrode 103 of the thin film transistor T. A gate line (not shown) connected to each other and a gate pad (not shown) connected to an end of the gate line are formed.

Next, after the silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the entire surface of the substrate including the gate electrode 103 to form a gate insulating layer 105, the gate insulating layer 105 is formed. Amorphous silicon is deposited on the 105 by a chemical vapor deposition (CVD) process to form an amorphous silicon layer 107. In this case, instead of the amorphous silicon, an oxide semiconductor, for example, AxByCzO (A, B, C = Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z ≥ 0) Alternatively, it may be formed of a tetracomponent oxide semiconductor.

Subsequently, as shown in FIG. 4B, the amorphous silicon layer 107 is patterned by a photolithography process and an etching process to form an active pattern of the thin film transistor T on the gate electrode 103. 107a).

Next, after forming a buffer layer 109 by depositing silicon oxide (SiO ₂ ) or silicon nitride (SiNx) on the gate insulating layer 105 including the active pattern 107a by a CVD process, the photolithography (Photolitho) The first contact hole 111 exposing the active pattern 107a is formed at a source electrode (not shown) and a drain electrode (not shown) of the thin film transistor by patterning by a graphy process and an etching process.

Subsequently, as shown in FIG. 4C, molybdenum (Mo), aluminum neodium (AlNd), chromium (Cr), copper (Cu), and the like are selected on the buffer layer 109 including the first contact holes 111. After depositing a metal, a stack of metals, or an alloy thereof by a sputtering method, it is patterned by a photolithography process and an etching process, and the source electrode 113a of the thin film transistor connected to the active pattern 107a. ), A drain electrode 113b, a data line orthogonal to the gate line (not shown), and a data pad 113c connected to each end of each of the data line (not shown). When the source electrode 113a and the drain electrode 113b of the thin film transistor connected to the active pattern 107a are formed, a data pad 113c is also formed in the non-light emitting portion NP of the substrate. The common electrode 113c may be formed when the gate electrode 103 is formed.

In this case, each of the source electrode 113a and the drain electrode 113b of the thin film transistor is connected to the active pattern 107a through the first contact holes 111 formed in the buffer layer 109.

Next, as illustrated in FIG. 4C, an acrylic organic compound, BCB (benzo-cyclo-), is formed on the buffer layer 109 including the source electrode 113a and the drain electrode 113b of the thin film transistor. The passivation layer 115 is formed by coating an entire surface of an organic insulating material such as butene) or perfluorocyclobutane (PFCB), or depositing an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx).

Subsequently, as shown in FIG. 4D, the passivation layer 115 is patterned by a photolithography process and an etching process to expose the drain electrode 113b of the thin film transistor 117. ).

Next, a metal selected from molybdenum (Mo), aluminum neodium (AlNd), chromium (Cr), copper (Cu), or the like, on top of the passivation layer 115 including the second contact hole 117, a stack or alloy thereof The metal layer 121 is deposited by sputtering to form a metal layer 121.

Subsequently, as shown in FIG. 4E, the metal layer 121 is patterned by a photolithography process and an etching process to be connected to the drain electrode 113b through the second contact hole 117. The anode electrode 121a is formed.

Next, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is entirely deposited on the passivation layer 115 including the anode electrode 121a to form a bank layer 123.

Subsequently, as shown in FIG. 4F, the bank layer 123 is patterned by a photolithography process and an etching process to be adjacent to the anode electrode 121a on the second contact hole 117. A bank pattern 123a is formed on the anode electrode 121a, and a dummy bank pattern 123b is formed on the non-light emitting portion NP of the substrate. In this case, the dummy bank pattern 123b is formed along the periphery of the non-light emitting portion NP of the substrate except for the light emitting portion P of the organic light emitting diode.

Next, as shown in FIG. 4G, the organic material layer and the metal layer are deposited to form the organic light emitting layer and the cathode electrode in the inverted state of the substrate 101, in which the non-light emitting portion NP of the substrate 101 is deposited. The organic material layer 125 is deposited on the light emitting part P of the substrate 101 by sequentially depositing the organic material and the metal material through the opening 131a while the formed dummy bank pattern 123b is covered with the metal tray 131. And the metal layer 127 is deposited.

A process of forming the organic material layer 125 and the metal layer 127 on the entire surface of the substrate 101 using the metal tray 131 as a mask will now be described with reference to FIG. 5.

FIG. 5 is a perspective view schematically illustrating a substrate, a metal tray, and a deposition apparatus in the deposition of an organic light emitting layer and a metal layer in the manufacture of an organic light emitting device according to the present invention.

Referring to FIG. 5, in order to deposit an organic material layer and a metal layer on the light emitting part P while the substrate 101 is turned upside down, a metal tray 131 having an opening 131a is positioned on the substrate 101. Support 101. In this case, the opening portion 131a of the metal tray 131 corresponds to the light emitting portion P of the substrate 101, that is, the pixel formation region, and an outer portion of the metal tray 131 is exposed to the substrate 101. The substrate 101 is supported in contact with the upper surface of the dummy bank pattern 123b formed on the light part NP. At this time, since the metal tray 131 supports the substrate in contact with the dummy bank pattern 123b, the dummy tray pattern is not provided in the non-light emitting portion of the substrate. The contact circuit portion formed under the non-light emitting portion of the substrate while being in contact with the edge of the circuit breaker, for example, Vdd power line or Vss wiring, or the like, a problem that caused a short (short) does not occur. The metal tray 131 may be formed of a flexible material while having a planar structure of a portion where the dummy bank pattern 123b touches.

In this manner, the metal tray 131 is in contact with the dummy bank pattern 123b to support the substrate 101, and then a process for depositing the organic material layer and the metal layer from the deposition apparatus 160 is performed.

On the other hand, Figure 6 is a schematic cross-sectional view of a metal tray having a contact protrusion of a pointed form as another embodiment of a metal tray (metal tray) used as a mask when manufacturing an organic light emitting device according to the present invention.

Referring to FIG. 6, the contact protrusion 231a having a pointed shape on the upper surface of the metal tray 231 that contacts the dummy bank pattern 123b provided in the non-light emitting portion NP of the substrate 101 to support the substrate 101 is provided. Since the surface area in contact with the dummy bank pattern 123b is reduced by that, the problem caused by the metal tray contacting the substrate as in the past, for example, a problem such as a short between the Vdd wiring line and the Vss wiring Will not occur.

In addition, FIG. 7 is a schematic cross-sectional view of a metal tray provided with spaced apart flat projections as another embodiment of a metal tray used as a mask when manufacturing an organic light emitting device according to the present invention. .

Referring to FIG. 7, a contact protrusion 331a having a flat shape on an upper surface of the metal tray 331 that contacts the dummy bank pattern 123b provided in the non-light emitting portion NP of the substrate 101 and supports the substrate 101. ) Is spaced apart, the surface area in contact with the dummy bank pattern (123b) is reduced by that, the problem caused by the metal tray in contact with the substrate as in the past, for example, short between the Vdd wiring line and the Vss wiring Problems such as this do not occur.

Meanwhile, the metal trays 231 and 331 may be formed of a flexible material, for example, a high temperature and chemically resistant Teflon material, a PI series heat resistant material, or a plastic material such as PVP.

Next, as shown in FIG. 4H, the metal tray 131 contacts the dummy bank pattern 123b to support the substrate 101. The organic material and the metal material are sequentially deposited through the opening 131a of the metal tray 131 to form the organic light emitting layer 125 and the cathode electrode 127. In this case, the organic material and the metal material are not deposited on the non-light emitting portion NP of the substrate 101 covered by the metal tray 131.

At this time, although not shown in the drawing, the organic light emitting layer 125 is a hole injection layer material, a hole transport layer material, a white light emitting layer material, an electron transport layer material, an electron injection layer material by a deposition method, for example, a thermal evaporation method. Is sequentially deposited to form a hole injection layer (not shown), a hole transport layer (not shown), an electron transport layer (not shown), and an electron injection layer (not shown) sequentially stacked from the anode electrode 121a. The structure and thickness of the white organic light emitting layer 125 (OLED) thus formed are the same in all light emitting cells.

In addition, after the organic light emitting layer 125 is formed, aluminum (Al), silver (Ag), or an alloy thereof is deposited on an electron injection layer (not shown) by a thin thickness capable of transflecting by a sputtering method to form a cathode electrode 127. ), The process of manufacturing the thin film transistor array substrate on the substrate 101 is completed.

Subsequently, as shown in FIG. 4I, after forming the black matrix 153 between the light emitting regions (not shown) on the color filter substrate 151, the red, blue, and green color filter layers 155 are formed in the light emitting region. To form a color filter array substrate.

Then, the color filter substrate 151 and the outer region of the substrate 101 are bonded to each other by a silan (not shown) to complete the process of manufacturing the organic light emitting display device according to the present invention. At this time, when the color filter substrate 151 and the substrate 101 are bonded together, a black matrix 153 formed on the color filter substrate 151 is positioned above the bank pattern 123a of the substrate 101. It is adhered to the portion of the cathode electrode 127.

As described above, according to the organic light emitting device according to the present invention and a method of manufacturing the same, a non-light emitting portion of the substrate is in contact with the metal tray (metal tray) used as a mask during the organic light emitting layer deposition process when manufacturing the organic light emitting device By forming a dummy bank structure, the short circuit between the wirings, for example, the Vdd wiring and the Vss wiring due to the scratching of the back plane of the substrate may be prevented, thereby improving the yield of the panel.

In addition, according to the present invention, a pointed contact projection is formed on the upper surface of the metal tray for contacting the dummy bank pattern provided in the non-light emitting portion of the substrate to support the substrate, or a flat contact projection is provided to be spaced apart. By reducing the surface area in contact with the dummy bank pattern, the problem caused by the metal tray contacting the substrate as in the past, such as a short between the Vdd wiring line and the Vss wiring, does not occur.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

101: first substrate 103: gate electrode
105: gate insulating film 107a: active pattern
109: buffer layer 111: first contact hole
113a: source electrode 113b: drain electrode
113c: data pad 115: passivation layer
117: second contact hole 121a: anode electrode
123a: bank pattern 123b: dummy bank pattern
125: organic light emitting layer 127: cathode electrode
131 metal tray 131a opening
151: second substrate 153: black matrix
155: color filter layer 160: deposition equipment

Claims (8)

A first substrate and a second substrate on which light emitting portions and non-light emitting portions are defined;
A thin film transistor formed on the light emitting part of the first substrate and composed of a gate electrode, an active pattern, a source electrode, and a drain electrode;
A passivation layer formed on an entire surface of the first substrate including the thin film transistor and exposing the thin film transistor;
An anode electrode formed on the passivation layer and electrically connected to the thin film transistor;
A bank pattern formed on the anode and the passivation layer to separate each sub-pixel independently;
A dummy bank pattern formed on the passivation layer positioned on the non-light emitting portion of the first substrate;
An organic light emitting layer formed on the bank pattern, the anode electrode, and the passivation layer on the light emitting part of the first substrate;
A cathode electrode formed on the organic light emitting layer;
A black matrix formed on the second substrate;
A color filter layer formed on a second substrate between the black matrices; And
And a seal pattern for bonding the first substrate and the second substrate together. The organic light emitting diode of claim 1, wherein the organic light emitting layer and the cathode are formed in the remaining light emitting area except for the non-light emitting part provided with the dummy bank pattern. The organic light emitting diode of claim 1, wherein the dummy bank pattern is formed along an outer portion of the light emitting portion in a non-light emitting portion region positioned outside the light emitting portion. Providing a first substrate and a second substrate on which light emitting portions and non-light emitting portions are defined;
Forming a thin film transistor including a gate electrode, an active pattern, a source electrode, and a drain electrode in a light emitting portion of the first substrate;
Forming a passivation layer exposing the thin film transistor on the entire surface of the first substrate including the thin film transistor;
Forming an anode electrode on the passivation layer, the anode electrode being electrically connected to the thin film transistor;
Forming a dummy bank pattern on the passivation layer on the non-light emitting portion of the first substrate together with a bank pattern that separates each sub-pixel independently on the anode and the passivation layer;
Allowing the dummy bank pattern to be in contact with and supported on an upper portion of the metal train while inverting the first substrate;
Forming an organic light emitting layer on the bank pattern, the anode electrode, and the passivation layer on the light emitting part of the first substrate using the metal tray as a mask;
Forming a cathode on the organic light emitting layer;
Forming a black matrix on the second substrate;
Forming a color filter layer on a second substrate between the black matrices; And
Forming a seal pattern for bonding the first substrate and the second substrate; organic light emitting device comprising a. The method of claim 4, wherein the organic light emitting layer and the cathode are formed in the remaining light emitting area except for the non-light emitting part provided with the dummy bank pattern. The method of claim 4, wherein the dummy bank pattern is formed along an outer portion of the light emitting portion in a non-light emitting portion area of the first substrate positioned outside the light emitting portion. The method of claim 4, wherein a sharp contact protrusion or a flat contact protrusion is formed on the metal tray that is in contact with and supports the dummy bank pattern. The method of claim 4, wherein the metal tray is formed of a high temperature and chemically resistant Teflon material, a PI series heat resistant material, or a PVP plastic material.

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