KR20120060075A - Light emitting diode, light emitting device and back light unit using the same - Google Patents

Abstract

PURPOSE: A light emitting diode and a light emitting device and a back light unit using the same are provided to improve luminous efficiency by increasing an amount of reflected light since light is reflected from a light emitting layer through an activation alloy layer formed to surround a part of a side and a part of a lower side of a light emitting diode. CONSTITUTION: A buffer GaN(Gallium Nitride) layer(31) is formed on a diode formation area of a lead frame. An N-GaN layer(32) is formed on an upper side of the buffer GaN layer. An active layer(35) is formed on an non-etched upper side of the N-GaN layer. A P-GaN layer(36) is formed on an upper side of the active layer. A transparent conductive oxide layer(37) is formed on an upper side of the P-GaN layer.

Description

LIGHT EMITTING DIODE, LIGHT EMITTING DEVICE AND BACK LIGHT UNIT USING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode, and more particularly, to a light emitting diode and a light emitting device and a backlight unit using the same, which improve light emission efficiency by increasing the area of the light emitting layer of the light emitting diode while supplying a driving current evenly to the light emitting layer. will be.

Recently, a light emitting diode having an excellent monochromatic peak wavelength, excellent light efficiency, and miniaturization can be used as a light emitting device. The light emitting diode uses a phenomenon of emitting light when electrons transition, and light is generated when electrons in a semiconductor conduction band recombine with holes in a valence band.

The emission wavelength of the light emitting diode is controlled by changing the type of impurities added to the semiconductor. Silicon carbide (SiC) and group III nitrides, particularly GaN (gallium nitride), are used to generate light having a spectrum of blue or ultraviolet wavelengths. Mainly used.

In general, in a horizontal type light emitting diode using GaN, an N-GaN layer, an active layer, and a P-GaN layer are sequentially stacked on a semiconductor substrate, and then a mesa (Mesa) is formed from the P-GaN layer to the N-GaN layer. ) And each electrode is formed on the upper portion of the mesa-etched N-GaN layer and the uppermost non-etched P-GaN layer. When a positive load and a negative load are applied to each electrode of the GaN-based light emitting diode thus completed, holes and electrons are gathered and recombined into the active layer from the P-GaN and N-GaN layers, respectively. Will emit light.

However, such a horizontal type light emitting diode forms a respective electrode by mesa etching from the P-GaN layer to a part of the light emitting layer and the N-GaN layer, and the size of the light emitting layer decreases according to the size of the mesa-etched region. There are disadvantages. That is, since the size of the mesa etching region affects the light emitting area or the electrode formation area, the loss of any one portion has to be taken.

In addition, since the current supplied to the light emitting diode, that is, electrons and holes, is only intended to move in the shortest distance, the electrons and holes are not diffused well and are not evenly supplied to the active layer, the P-GaN layer, and the N-GaN layer. There is no problem. In other words, the electrons and holes supplied to each electrode are concentrated only on the shortest paths of the active layer, the P-GaN layer, and the N-GaN layer, so that the electrons and holes are not diffused well except the shortest path. In this case, since the area where electrons and holes are activated, that is, the area where light is generated, also becomes small, the luminous efficiency of the light emitting diode is reduced.

The present invention is to solve the above problems, the light emitting diode and the light emitting device and the back using the light emitting diode using the same to increase the area of the light emitting layer of the light emitting diode while the driving current is evenly supplied to the light emitting layer The purpose is to provide a light unit.

A light emitting diode according to an embodiment of the present invention for achieving the above object includes a buffer GaN layer formed in the diode formation region of the lead frame; An N-GaN layer formed on the front surface of the buffer GaN layer and having a mesa-etched portion of its outer surface; An active layer formed on an unetched front surface of the N-GaN layer; A P-GaN layer formed by etching a part of the surface on the front surface of the active layer; A transparent conductive oxide layer formed on the entire surface of the P-GaN layer; A first activation alloy layer formed to surround the unetched N-GaN layer, the side surfaces of the lead frame or the buffer GaN layer, and a partial surface or an entire surface in a rear direction thereof; A first electrode formed on the etched surface of the N-GaN layer and electrically connected to the first activation alloy layer; And a second electrode formed on a portion of the transparent conductive oxide.

The light emitting diode may further include an insulating film formed on a portion of the peripheral portion of the second electrode, the front surface of the transparent conductive oxide, and a second activated alloy layer formed along an outer circumferential surface of the first activated alloy layer.

The first activation alloy layer is formed to surround the side of the non-etched N-GaN layer, the buffer GaN layer and the back surface of the buffer GaN layer, the current supplied through the first electrode to the N-GaN layer It is characterized in that the supply.

The first activation alloy layer is formed to surround the entire surface or a part of a side of the lead frame on which the non-etched N-GaN layer, the buffer GaN layer, and the buffer GaN layer are formed, and the entire surface of the lead frame. The current supplied through one electrode is characterized in that for supplying to the N-GaN layer.

The second activation alloy layer is formed along the outer circumferential surface of the first activation alloy layer so as to correspond to the shape of the first activation alloy layer, so that the current supplied through the first electrode like the first activation alloy layer is It is characterized in that the supply to the N-GaN layer.

The second activation alloy layer is formed in a predetermined pattern shape, the pattern shape is characterized in that formed in any one selected from stripe, lattice, radial, spider web or honeycomb.

The first electrode is formed on an etched front surface of the mesa etched N-GaN layer and is in electrical contact with at least one of the first or second activation alloy layer.

In addition, a light emitting device using a light emitting diode according to an embodiment of the present invention for achieving the above object includes at least one light emitting diode for generating light; A lead frame formed in a package frame to seat the at least one light emitting diode; And a fluorescent molding part filled in the groove of the package frame to cover the at least one light emitting diode, wherein the at least one light emitting diode is a light emitting diode having at least one of the above-mentioned various features. It features.

In addition, a backlight unit using a light emitting diode according to an embodiment of the present invention for achieving the above object includes a plurality of light emitting elements for generating light; A bottom cover to accommodate the plurality of light emitting elements; A diffusion plate disposed on a front surface of the bottom cover to face the plurality of light emitting devices; And a plurality of optical sheets for diffusing the light from the diffuser plate and outputting the light, wherein the plurality of light emitting devices are light emitting devices having at least one of various features.

The light emitting diode of the present invention having the above characteristics and the light emitting device and the back light unit using the same may improve the light emitting efficiency by increasing the area of the light emitting layer of the light emitting diode and evenly supplying the driving current to the light emitting layer. When the driving current is supplied evenly, the internal resistance can be reduced to reduce the amount of heat generated and to reduce the operating voltage.

In addition, by reflecting the light from the light emitting layer by the activation alloy layer formed to surround a part of the side surface and the lower surface of the light emitting diode, the amount of reflected light can also be increased to further improve the light emitting efficiency of the light emitting diode.

1 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention.
FIG. 2 is a plan view of the light emitting device shown in FIG. 1. FIG.
3 is a cross-sectional view illustrating in detail the light emitting diode of FIG. 1.
4 is an exploded cross-sectional view schematically illustrating a backlight unit and a liquid crystal display device to which a light emitting device of the present invention is applied;

Hereinafter, a light emitting diode according to an embodiment of the present invention having the above-described features and effects, and a light emitting device using the same, and a back light unit will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a light emitting device according to an embodiment of the present invention, Figure 2 is a plan view of the light emitting device shown in FIG.

1 and 2 include at least one light emitting diode 16 for generating light; A lead frame (14) configured in a package frame (12) to seat the at least one light emitting diode (16); And a fluorescent molding part 18 filled in the groove of the package frame 12 to cover the at least one light emitting diode 16.

The package frame 12 may be formed of a resin series such as plastic, or may be made of a heat metal or the like for heat dissipation of the light emitting diode 16. When the package frame 12 is made of a resin series such as plastic, a silicon substrate or a glass substrate, the lead frame 14 such as a heat metal is connected to the light emitting diode 16. A groove is formed in the package frame 12 so that the fluorescent molding part 18 may be filled. The groove is filled with the fluorescent molding part 18 after the light emitting diode 16 is seated. In the case of FIG. 1, the package frame 12 is mounted on a separate printed circuit board 13 or the like. In this case, the lead frame 14 protruding to the outside may contact the printed circuit board 13.

The lead frame 14 is formed inside and outside the package frame 12 to penetrate the bottom surface and the outer surface of the groove portion of the package frame 12 so that the light emitting diode 16 is seated. May be divided into two and divided into first and second lead frames. Here, the first lead frame is configured to penetrate a portion of the bottom surface of the groove portion of the package frame 12 and one outer surface of the package frame 12, and the second lead frame is formed on one side of the groove bottom surface of the package frame 12 and the package. It is configured to penetrate the other outer surface of the frame (12). Each of the first and second lead frames may be connected with a first lead electrode 15 and a second lead electrode 17, and driving voltages having different polarities may be supplied from the outside through the lead electrodes 15 and 17. It is supplied to the light emitting chip 16.

The fluorescent molding 18 covers all of the lead frame 14 exposed to the groove of the package frame 12, the light emitting diode 16 seated on the lead frame 14, and each of the lead electrodes 15 and 17. It is formed by filling the groove of the package frame 18 so as to. Here, the fluorescent molding unit 18 is formed of a transparent or opaque mold material by mixing a plurality of phosphors having different colors with a transparent or opaque synthetic resin at a predetermined ratio.

The light emitting diode 16 may be formed of a quaternary nitride compound device or the like which reduces the spontaneous polarization to allow a constant light generation path. Such a light emitting diode 16 will be described in more detail with reference to FIG. 3.

3 is a cross-sectional view illustrating in detail the light emitting diode of FIG. 1.

The light emitting diode 16 shown in FIG. 3 includes a buffer GaN layer 31 formed in the diode formation region of the lead frame 14; An N-GaN layer 32 formed on the front surface of the buffer GaN layer 31 and etched on a portion of its outer surface; An active layer 35 formed on the unetched front surface of the N-GaN layer 32; A P-GaN layer 36 formed on the entire surface of the active layer 35; A transparent conducting oxide layer 37 formed on the entire surface of the P-GaN layer 36; A first activation alloy layer 28 formed to cover the side surfaces of the non-etched N-GaN layer 32 and the lead frame 14 or the buffer GaN layer 31 and a partial surface or an entire surface in the rear direction thereof; A first electrode 42 formed on the etched partial surface of the N-GaN layer 34 and electrically connected to the first activation alloy layer 28; And a second electrode 44 formed on a portion of the transparent conductive oxide 37.

In addition, an insulating film 44 may be further formed on a portion of the peripheral portion of the second electrode 44 and the front surface of the transparent conductive oxide 37, and a second activation may be performed on the outer circumferential surface of the first activation alloy layer 38. The alloy layer 39 may be further formed to improve driving current supply efficiency of the light emitting diode.

The frame in which the undoped buffer GaN layer 31 is formed, for example, the lead frame 14, serves as a support for growing the constituent materials constituting the light emitting diode 16, for example, GaN-based crystals. . To this end, the lead frame 14 may be a sapphire (Sapphire) frame, zinc oxide (ZnO) frame, aluminum oxide frame, silicon (Si) frame, at least one of GaN, InGaN, AlGaN, AlInGaN Stacked template substrates may be used.

As the method of forming the N-GaN layer 32, the active layer 35, and the P-GaN layer 36, any one can be used without limitation as long as it is capable of depositing a thin GaN-based compound, but an organic metal chemical vapor deposition (MOCVD) method is used. It is suitable.

In the process of forming the N-GaN layer 32, doping is performed with an appropriate dopant. Here, silicon, germanium, selenium, tellurium, carbon, or the like may be used as the dopant for N doping. When silicon is used, the doping concentration is generally about 1017 / cm3. N-GaN layer 32 may be formed in a two-layer structure of N + and N-by varying the doping concentration.

When the undoped buffer GaN layer 31 is first formed on the lead frame 14, and then the N-GaN layer 32 is formed thereon, defects are generated due to the rapid change in the lattice period, resulting in thin film characteristics. It becomes possible to prevent a fall.

The active layer 35 is formed on the N-GaN layer 32 to generate light in the light emitting diode 16. The active layer 35 may be represented by the general formula of Al x Ga Y In 1-X-YN (0 ≦ x <1, 0 <y <1), and a binary system such as aluminum nitride, gallium nitride and indium nitride, and gallium nitride-indium and Ternary systems such as gallium nitride-aluminum. Group III elements may be partially substituted with boron, thallium, and the like, and nitrogen may be partially substituted with phosphorus, arsenic, antimony, and the like.

The active layer 35 can adjust the wavelength of light emitted by changing the component composition. For example, about 22% of indium is included to emit blue light. And about 40% of indium is included to emit green light.

The P-GaN layer 36 may be formed through the same process as the N-GaN layer 32. As the dopant of the P-GaN layer 36, magnesium, zinc, beryllium, calcium, strontium, barium, or the like may be used. Can be. At this time, the P-GaN layer 36 can also be formed in a two-layer structure of P + and P- like the N-GaN layer 32. After the N-GaN layer 32, the active layer 35, and the P-GaN layer 36 are stacked in this order on the lead frame 16, the P-GaN layer 36 needs to be activated. The activation method of the P-GaN layer 36 is to disassociate magnesium and hydrogen in order to prevent magnesium, which is a dopant of the P-GaN layer 36, from bonding with hydrogen and acting as a defect. More specifically, the heat treatment may be performed at 600 ° C. for about 20 minutes, and then heat treatment may be performed after forming the transparent conductive oxide layer 37 to be described later.

The transparent conductive oxide layer 37 is to reduce the total reflection of the light emitted from the light emitting diode 16 to the absorption and attenuation inside the light emitting diode 16. Light generated in the active layer 35 is emitted to the front surface through the first and second electrodes 42 and 44, the lead frame 14, and the like, wherein the first and second electrodes 42 and 44 and the lead frame ( Due to the difference in refractive index of 14), the light incident at an angle greater than the critical angle is totally reflected and exits in the lateral direction of the light emitting device, or is absorbed or attenuated in the light emitting device, which is an important cause of lowering the luminous efficiency. The critical angle at which total reflection occurs is smaller as the refractive index of both media forming the interface increases. The refractive index of the GaN layer is about 2.4, and the air refractive index is close to one. Since the refractive index of the transparent conductive oxide layer 37 is about 1.7, the difference in refractive index with respect to the external environment (air or the like) of the light emitting diode 16 can be reduced.

The transparent conductive oxide layer 37 may be made of a material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or zinc carbon oxide (ZCO), and the transparent conductive oxide layer may have a light transmittance. Since is more than 90% can increase the light extraction efficiency. On the other hand, although not shown in the drawings, the transparent conductive oxide layer 16 can further reduce the total reflection by having an uneven portion having a shape of a stripe, scratch, rectangle, dome, cylinder, and the like. In addition, the uneven portion may be formed of a photonic crystal structure. Photonic crystals refer to optical structures that exhibit photonic band gaps, localization of light, nonlinearity of light, and strong dispersion characteristics. In particular, photonic crystals refer to shapes and patterns having a lattice period of a length similar to that of light. By utilizing such a photonic crystal, not only the light propagation can be controlled, but also the spontaneous emission can be controlled, which can greatly contribute to the improvement and miniaturization of the optical device.

As described above, the buffer GaN layer 31, the N-GaN layer 32, the active layer 35, the P-GaN layer 36, and the transparent conductive oxide layer 37 are sequentially formed on the lead frame 14. Once formed, the outside of the N-GaN layer 32 including the transparent conductive oxide layer 37, the P-GaN layer 36, and the active layer 35 is mesa-etched. That is, as shown in FIG. 3, the circumferential surface and the top surface of the N-GaN layer 32 including the transparent conductive oxide layer 37, the P-GaN layer 36, and the active layer 35 are the mesas. Etch to form.

The first activation alloy layer 38 is formed so as to surround the side surfaces of the non-etched N-GaN layer 32 and the buffer GaN layer 31 and the back surface of the buffer GaN layer 31 to cover the first electrode 42. The current supplied through is evenly supplied to the N-GaN 32. This is to alleviate the characteristic that the current supplied to the first electrode 42 flows to the second electrode 44 through the shortest path adjacent to the first electrode 42 side, and is supplied to the first electrode 42. The current to be distributed is evenly distributed over the entire surface of the N-GaN layer 32.

The first activation alloy layer 38 may include, in whole or in part, a side of the lead frame 14 on which the non-etched N-GaN layer 32, the buffer GaN layer 31, and the buffer layer are formed. It is formed to surround the surface so that the current supplied through the first electrode 42 is evenly supplied to the side of the N-GaN layer 32. The first activation alloy layer 33 may be made of gold, aluminum, nickel, titanium, platinum, silver, or an alloy of GaN with high electrical conductivity. In addition, the first activation alloy layer 38 may be formed through ion implantation, sputtering, or organometallic chemical vapor deposition (MOCVD).

On the other hand, when the first activation alloy layer 38 is formed, the N-GaN layer 32 may be damaged, so the RTH method (Rapid Thermal Annealing Method) may be used after the formation of the first activation alloy layer 38. It is preferable to recover the damaged N-GaN layer 32 by performing.

The second activation alloy layer 39 is formed along the outer circumferential surface of the first activation alloy layer 38 so as to correspond to the shape of the first activation alloy layer 38, and like the first activation alloy layer 38, the first electrode The current supplied through 44 is evenly supplied to the N-GaN 32. This is to alleviate the characteristic that the current supplied to the first and second electrodes 42 and 44 flows only through the shortest path, and the current supplied to the first and second electrodes 42 and 44 is N, respectively. -Evenly distributed to GaN (32) and P-GaN (36). Like the first activation alloy layer 38, the second activation alloy layer 39 may be made of gold, aluminum, nickel, titanium, platinum, silver, or an alloy of GaN with high electrical conductivity. The second activated alloy layer 39 is formed on the entire surface of the transparent conductive oxide layer 37 through ion implantation, sputtering, or organometallic chemical vapor deposition (MOCVD).

In the case of the second activation alloy layer 39, the electrical conductivity is high, but because the light transmittance is not good, it may be formed in the form of various woven patterns. In this case, the thinner the pattern width, the thinner the thickness is. Preferably, the pattern width of the second activation alloy layer 39 is 10 to 10000 kPa, and the thickness thereof may be 10 to 50000 kPa. When the second activation alloy layer 39 is formed in a pattern form, the shape may be formed in any one of a stripe shape, a lattice shape, a radial shape, a spider web shape, or a honeycomb shape.

The first electrode 42 is formed on the etched front surface of the mesa etched N-GaN layer 32 and is in electrical contact with at least one of the first or second activation alloy layers 38, 39. Accordingly, the driving current supplied through the first electrode 42 is transferred to the N-GaN layer 32 and the P-GaN layer 36 through at least one of the first and second activation alloy layers 38 and 39. Evenly distributed feed.

The second electrode 44 is formed on some surfaces of the mesa-shaped non-etched top P-GaN layer 44 or the transparent conductive oxide layer 37.

The insulating film 44 is a part of the periphery of the second electrode 44, the front surface of the transparent conductive oxide 37, and the etched side surfaces of the P-GaN layer 36, the light emitting layer 36, and the N-GaN layer 32. The light emitting diode 16 is protected from the fluorescent material 18 that is formed to cover all of the light emitting diodes 16. The insulating film 44 may be formed first before the first and second activation alloy layers 38 and 39 and the first and second electrodes 42 and 44 are formed, and the first and second activation alloy layers 38 may be formed. 39 may be formed after the first and second electrodes 42 and 44 are formed.

The first activation alloy layer 38 or the second activation alloy layer 39 according to the present invention has a uniform current compared to the case where the current is supplied to the light emitting diode 16 only by the first and second electrodes 42 and 44. By injecting the light, the luminous efficiency can be increased as a result. In addition, the contact resistance can be reduced by allowing the current to be supplied evenly, and the amount of heat generated at the contact surface can also be reduced. In addition, the amount of reflected light is also increased by allowing the light from the light emitting layer 35 to be reflected by the first and second activation alloy layers 38 and 39 formed to surround a part of the side surface and the bottom surface of the light emitting diode 16. The luminous efficiency of the light emitting diode 16 can be further improved.

4 is an exploded cross-sectional view schematically illustrating a backlight unit and a liquid crystal display device to which the light emitting device of the present invention is applied.

The liquid crystal display shown in FIG. 4 includes a backlight unit 20; Panel guide 27; A liquid crystal panel 50; A case 61 is provided.

The backlight unit 20 is disposed on the front surface of the bottom cover 23 so as to face the plurality of light emitting elements 22, the bottom cover 23 accommodating the plurality of light emitting elements 22, and the plurality of light emitting elements 22. And a plurality of optical sheets 26 for diffusing and emitting light from the diffuser plate 25.

Each of the light emitting devices 22 may include light emitting devices 22 including the light emitting diodes 16 according to the exemplary embodiment of the present invention described above with reference to FIGS. 1 to 3. The light emitting devices 22 are detachably mounted to sockets (not shown) to face the liquid crystal panel 30.

The bottom cover 23 is a bottom surface facing the plurality of light emitting elements 22, an inclined surface inclined at a predetermined slope from the top and bottom of the bottom surface so as to correspond to the longitudinal direction of the light emitting element 22, and an inclined surface facing the bottom surface. It is made to include a seating portion extending from. In addition, a reflective sheet 24 for reflecting light from each light emitting element 22 toward the liquid crystal panel 30 is formed on the bottom surface and the inclined surface of the bottom cover 23.

The diffusion plate 25 is stacked on the front opening of the bottom cover 23. That is, the diffusion plate 25 is stacked on the upper surface of the seating portion of the bottom cover 23, and the diffusion plate 25 diffuses the light emitted from the plurality of light emitting elements 22 to the entire area of the liquid crystal panel 50. Let's do it.

The plurality of optical sheets 26 allow the light diffused by the diffusion plate 25 to be irradiated perpendicular to the liquid crystal panel 50. Here, the optical sheets 26 convert one diffusion sheet for diffusing the light emitted from the diffusion plate 25 to the entire area, and the propagation angle of the light diffused by the diffusion sheet to be perpendicular to the liquid crystal panel 50. And first and second prism sheets.

On the other hand, the panel guide 27 is mounted on the seating portion of the bottom cover 23 to wrap the edges and side surfaces of the diffusion plate 25 and the plurality of optical sheets 26 and surround the side surfaces of the bottom cover 23. . The panel guide 27 includes a panel supporter for supporting the liquid crystal panel 50. The panel support part is formed to be stepped to support the rear non-display area and the side surface of the liquid crystal panel 50.

The liquid crystal panel 50 is stacked on the panel support of the panel guide 27 to reflect the light incident to the front surface or to adjust the transmittance of the light incident from the backlight unit 20 to display an image.

The case 61 is bent to surround the front non-display area of the liquid crystal panel 50 and the side surface of the bottom cover 23. In this case, the case 61 is fastened and fixed to the panel guide 27 surrounding the side surface of the cover 23.

As described above, the light emitting diode 16 and the light emitting device 22 and the backlight unit 20 using the same according to the embodiment of the present invention may be formed of the first activation alloy layer 38 or the second activation alloy layer ( Light is generated using the light emitting diodes 16 in which 39 is formed. Thus, the present invention can not only increase the luminous efficiency of the light emitting element 22 or the backlight unit 20, but also reduce the contact resistance by allowing the current to be supplied evenly, and also reduce the amount of heat generated at the contact surface. Can be.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

12: package frame 14: lead frame
16: light emitting diode 18: fluorescent molding layer
31: buffer GaN layer 32: N-GaN layer
35: active layer 36: P-GaN layer
37: transparent conductive oxide layer 38: first activation alloy layer
39: second activation alloy layer

Claims (9)

A buffer GaN layer formed in the diode formation region of the lead frame;
An N-GaN layer formed on the front surface of the buffer GaN layer and having a mesa-etched portion of its outer surface;
An active layer formed on an unetched front surface of the N-GaN layer;
A P-GaN layer formed by etching a part of the surface on the front surface of the active layer;
A transparent conductive oxide layer formed on the entire surface of the P-GaN layer;
A first activation alloy layer formed to cover the sidewalls of the non-etched N-GaN layer, the lead frame or the buffer GaN layer, and a partial surface or an entire surface in a rear direction thereof;
A first electrode formed on the etched surface of the N-GaN layer and electrically connected to the first activation alloy layer; And
And a second electrode formed on a portion of the transparent conductive oxide. The method of claim 1,
The light emitting diode is
An insulating film formed on a portion of the peripheral portion of the second electrode and the entire surface of the transparent conductive oxide, and
The light emitting diode further comprises a second activation alloy layer formed along the outer circumferential surface of the first activation alloy layer. The method of claim 1,
The first activation alloy layer
It is formed to surround the side of the non-etched N-GaN layer, the buffer GaN layer and the back of the buffer GaN layer, characterized in that for supplying a current supplied through the first electrode to the N-GaN layer Light emitting diode. The method of claim 2,
The first activation alloy layer
A current which is formed to surround the entire surface or a part of a side of the lead frame on which the non-etched N-GaN layer, the buffer GaN layer, and the buffer GaN layer are formed, and a rear surface of the lead frame, and is supplied through the first electrode The light emitting diode, characterized in that for supplying to the N-GaN layer. The method of claim 3, wherein
The second activation alloy layer
It is formed along the outer circumferential surface of the first activation alloy layer to correspond to the shape of the first activation alloy layer, so that the current supplied through the first electrode like the first activation alloy layer is supplied to the N-GaN layer. Light-emitting diode, characterized in that. The method of claim 5, wherein
The second activation alloy layer
The light emitting diode is formed in a predetermined pattern shape, the pattern shape is formed in any one selected from stripe, lattice, radial, spider web or honeycomb. The method according to claim 6,
The first electrode is
A light emitting diode formed on an etched front surface of the mesa etched N-GaN layer and in electrical contact with at least one of the first and second activation alloy layers. At least one light emitting diode for generating light;
A lead frame formed in a package frame to seat the at least one light emitting diode; And
A fluorescent molding part filled in a groove of the package frame to cover the at least one light emitting diode,
The at least one light emitting diode is a light emitting device having the characteristics of at least one of the first to seventh. A plurality of light emitting elements for generating light;
A bottom cover to accommodate the plurality of light emitting elements;
A diffusion plate disposed on a front surface of the bottom cover to face the plurality of light emitting devices; And
A plurality of optical sheets for diffusing light from the diffuser plate and outputting the light;
And said plurality of light emitting elements are light emitting elements having the features of claim 8.

Images