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KR20120050286A - Light emitting device package using quantum dot - Google Patents

Light emitting device package using quantum dot Download PDF

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Publication number
KR20120050286A
KR20120050286A KR1020100111710A KR20100111710A KR20120050286A KR 20120050286 A KR20120050286 A KR 20120050286A KR 1020100111710 A KR1020100111710 A KR 1020100111710A KR 20100111710 A KR20100111710 A KR 20100111710A KR 20120050286 A KR20120050286 A KR 20120050286A
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KR
South Korea
Prior art keywords
light emitting
emitting device
device package
wavelength conversion
quantum dot
Prior art date
Application number
KR1020100111710A
Other languages
Korean (ko)
Inventor
고건유
김영택
장규호
최선열
Original Assignee
삼성엘이디 주식회사
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Application filed by 삼성엘이디 주식회사 filed Critical 삼성엘이디 주식회사
Priority to KR1020100111710A priority Critical patent/KR20120050286A/en
Publication of KR20120050286A publication Critical patent/KR20120050286A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting device package using a quantum dot is provided to produce a stable light emitting device package by protecting a wavelength change part from external moisture or oxygen. CONSTITUTION: A metal reflection part(131) is arranged around a light emitting device(120) in a concave part. The metal reflection part reflects light generated from the light emitting device to a desired direction. A wavelength converter(142) is formed on an upper side of a sealing part(141). The wavelength converter includes a quantum dot(150). The quantum dot changes the wavelength of the light emitted from the light emitting device.

Description

Light Emitting Device Package Using Quantum Dot

The present invention relates to a light emitting device package using a quantum dot.

Quantum dots are materials that exhibit quantum confinement effects as nanocrystals of semiconductor materials having a diameter of about 10 nm or less. Quantum dots generate light that is stronger than conventional phosphors in a narrow wavelength band. The emission of quantum dots is generated by the transition of electrons excited by the valence band in the conduction band. Even in the same material, the wavelength varies depending on the particle size. As the size of the quantum dot is smaller, light of a shorter wavelength is emitted, so that light of a desired wavelength range can be obtained by adjusting the size.

These quantum dots remain dispersed in a naturally coordinated form in an organic solvent. If not properly dispersed, or exposed to oxygen or moisture, there is a problem that the luminous efficiency is reduced. To solve this problem, a method of enclosing quantum dots with organic materials has been developed. However, the method of capturing the quantum dots themselves with organic material or wrapping other bandgap materials has problems in terms of process and cost. Accordingly, there is a demand for the development of a method that can use quantum dots that are more stable and have improved luminous performance. For example, in order to solve this problem, attempts have been made to protect quantum dots safely from oxygen or moisture by incorporating organic solvents or polymers in which quantum dots are dispersed inside a polymer cell or a glass cell.

Provided is a light emitting device package that can use a quantum dot in a stable form.

According to an aspect of the present invention,

A package body having a recess; At least one pair of lead frames mounted to the package body; A light emitting device electrically connected to the lead frame and mounted on the recess; An encapsulation part formed in the concave part to encapsulate the light emitting device; A metal reflector positioned around the light emitting element in the recess and reflecting light generated from the light emitting element in a desired direction; And a wavelength conversion part formed on an upper surface of the encapsulation part and including a quantum dot for converting a wavelength of light emitted from the light emitting device.

In one embodiment of the present invention, it may further include a transparent resin layer disposed on the upper surface of the wavelength conversion portion.

In this case, the transparent resin layer may be a silicone or epoxy resin.

In one embodiment of the present invention, it is disposed on the wavelength conversion portion, may further include a protective layer made of transparent glass.

In this case, irregularities may be formed on the surface of the protective layer.

In an embodiment of the present disclosure, a portion of the at least one pair of leadframes may form at least a portion of the metal reflecting portion.

In one embodiment of the present invention, the metal reflector may be formed on the inner surface of the recess of the package body.

In one embodiment of the present invention, the wavelength conversion unit may further include a phosphor.

Another aspect of the invention,

A package body having a recess; At least one pair of leadframes mounted to the package body; A light emitting device electrically connected to the lead frame and mounted on the recess; A wavelength conversion unit formed in the concave portion and including a quantum dot for converting a wavelength of light emitted from the light emitting device; And a metal reflector positioned around the light emitting device in the recess to reflect the light generated from the light emitting device in a desired direction, the metal reflector being made of a material that does not react with the quantum dots. .

In one embodiment of the present invention, the metal reflector may be made of at least one of gold (Au), platinum (Pt) and palladium (Pd).

In one embodiment of the present invention, it may further include a transparent resin layer disposed on the upper surface of the wavelength conversion portion.

In this case, the transparent resin layer may be a silicone or epoxy resin.

In one embodiment of the present invention, it is disposed on the wavelength conversion portion, may further include a protective layer made of transparent glass.

In this case, irregularities may be formed on the surface of the protective layer.

In an embodiment of the present disclosure, a portion of the at least one pair of frames may form at least a portion of the metal reflecting portion.

In one embodiment of the present invention, the metal reflector may be formed on the inner surface of the recess of the package body.

In one embodiment of the present invention, the wavelength conversion unit may further include a phosphor.

In the light emitting device package according to an embodiment of the present invention, by protecting the wavelength conversion unit including a quantum dot from the external moisture or oxygen, and prevents damage caused by heat generated from the light emitting device to provide a light emitting device package having excellent luminous efficiency and stable Can provide.

1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention.
3 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention.
4 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention.
5 is a schematic cross-sectional view of a semiconductor light emitting device package according to still another embodiment of the present invention.
6 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention.
7 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention.
8 illustrates simulation results of light extraction efficiency of a light emitting device package according to an exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present invention. Referring to FIG. 1, the light emitting device package 100 according to the present embodiment includes a package body 130 having a concave portion, at least one pair of lead frames 110a and 110b mounted on the package body 130, and the lead. A light emitting element 120 electrically connected to the frames 110a and 110b, the encapsulation portion 141 formed in the concave portion to encapsulate the light emitting element 120, and within the concave portion. Located around the light emitting device 120 and formed on an upper surface of the metal reflector 131 and the encapsulation 141 for reflecting light generated from the light emitting device 120 in a desired direction, the light emitting device 120 A wavelength conversion unit 142 including a quantum dot 150 for converting the wavelength of the light emitted from the) may be provided.

The light emitting device 120 may be any photoelectric device that emits light when an electric signal is applied, and typically, may include an LED chip. For example, the light emitting device 120 may be a gallium nitride (GaN) -based LED chip that emits blue light, and as will be described later, at least some of the blue light is converted into light of another color by the wavelength converter 142. Can be.

The pair of lead frames 110a and 110b are electrically connected to the light emitting device 120 through the conductive wire W and may be used as terminals for applying an external electric signal. To this end, the pair of lead frames 110a and 110b may be made of a metal material having excellent electrical conductivity. As shown in FIG. 1, one of the pair of lead frames 110a and 110b may be provided as a mounting area of the light emitting device 120. However, in the present embodiment, a pair of electrodes (not shown) connected to the light emitting device 120 is positioned in an upper direction, that is, in a direction in which the encapsulation part 141 is disposed, and leads through a pair of conductive wires W. Although the structure is connected to the frame (110a, 110b), depending on the embodiment, the connection method may vary. For example, the light emitting device 120 may be directly electrically connected to the lead frame 110a provided as a mounting area without using a wire, and may be connected only to the other lead frame 110b with the conductive wire W. In addition, without the conductive wire W, the light emitting device 120 may be disposed in a so-called flip-chip bonding method.

Meanwhile, in the present embodiment, only one light emitting device 120 is represented, but two or more light emitting devices 120 may be provided. Furthermore, although the conductive wire W is shown as an example of the wiring structure, it may be appropriately replaced by another type of wiring structure, for example, a metal line, if it can perform the electrical signal transmission function.

In the present embodiment, a part of the pair of lead frames 110a and 110b electrically connected to the light emitting element 120 is bent so that a part of the lead frames 110a and 110b is formed in the recess of the package body. Although part of the metal reflector 131 is formed, the present invention is not necessarily limited to this embodiment, and as will be described later, the metal reflector 131 is leaded to the inner surface of the package body 130 through metal plating or the like. It may be formed separately from the frame (110a, 110b). Specifically, the metal reflector 131 may include a material of high reflectivity, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or the like.

The package body 130 may be disposed opposite to a position where the encapsulation unit 141 is disposed with respect to the light emitting device 120, and may serve to fix at least one pair of lead frames 110a and 110b. The material constituting the package body 130 is not particularly limited, but it is preferable to use a material having electrical insulation and excellent heat emission performance and light reflectance. In this aspect, the package body 130 may have a structure in which light reflective particles (eg, TiO 2 ) are dispersed in the transparent resin and the transparent resin.

In the present exemplary embodiment, the encapsulation part 141 encapsulating the light emitting device 120 may be formed in the recess of the package body 130 on the path of the light emitted from the light emitting device 120. 120 may be formed to seal. Specifically, the transparent resin may be formed of silicon or epoxy series, and the encapsulation part 141 may protect the light emitting device 120 and the conductive wire and match the refractive index between the material forming the light emitting device 120 and the outside. By implementing the external light extraction efficiency can be improved. In addition, since the encapsulation part 141 is formed to surround the light emitting device 120 in the recess of the package body 130, the wavelength conversion part 142 including the quantum dot 150 is formed from the light emitting device 120. Since spaced apart from each other, the degradation of the wavelength converter 142 by the light emitting device 120 can be prevented.

The wavelength converter 142 is disposed on the light emitting surface of the light emitting device 120 so as not to contact the metal reflector 131, and converts a wavelength of light emitted from the light emitting device 120 into a quantum dot. Dot) may be included. The quantum dot 150 is a nanocrystal of a semiconductor material having a diameter of about 1 to 10 nm, and exhibits a quantum confinement effect. The quantum dot 150 converts the wavelength of light emitted from the light emitting device 120 to generate wavelength converted light, that is, fluorescence. Examples of the quantum dots 150 include Si-based nanocrystals, group II-VI compound semiconductor nanocrystals, group III-V compound semiconductor nanocrystals, group IV-VI compound semiconductor nanocrystals, and the like. As 150, each of these may be used alone or a mixture thereof may be used.

Looking at the quantum dot 150 material in more detail, the group II-VI compound semiconductor nanocrystal is, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe a, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe one selected from the group consisting of It can be one. Group III-V compound semiconductor nanocrystals are, for example, GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNPs, GaInNAs, GaInPAs, InAlNPs, InAlNAs, and InAlPAs can be any one selected from the group consisting of. Group IV-VI compound semiconductor nanocrystals can be, for example, SbTe.

The quantum dot 150 is dispersed in a form naturally coordinated with a dispersion medium such as an organic solvent or a polymer resin, and the dispersion medium does not change the light or reflect the light without affecting the wavelength conversion performance of the quantum dot 150. And any transparent medium which does not cause light absorption can be used. For example, the organic solvent may include at least one of toluene, chloroform, and ethanol, and the polymer resin may be epoxy, silicon, polysthylene, and It may include at least one of acrylates.

On the other hand, the light emission of the quantum dot 150 is generated while the electrons in the excited state in the conduction band transitions, the wavelength of the same material also varies depending on the particle size. As the size of the quantum dot 150 decreases, light of a short wavelength may be adjusted to obtain light having a desired wavelength range by adjusting the size of the quantum dot 150. In this case, the size of the quantum dot 150 can be adjusted by appropriately changing the growth conditions of the nanocrystals.

Specifically, as shown in FIG. 1, the quantum dot 150 has a shape of surrounding the core 150a, the first shell 150b coated to surround the core 150a, and the first shell 150b. It may be composed of a second shell (150b). The core 150a constituting the quantum dot 150 may be classified into a cadmium (Cd) series including cadmium (Cd) and a cadmium free series not containing cadmium (Cd). . For example, the quantum dot 150 may include a core 150a made of cadmium selenide (CdSe), a first shell 150b made of cadmium sulfide (CdS), and a second shell 150c made of zinc sulfide (ZnS). It can be composed of). However, this is only one example, and quantum dots made of various materials may be applied.

In this case, when the material constituting the quantum dot 150 reacts with the metal forming the metal reflecting part 131, the metal reflecting part 131 is discolored, and the light emitted from the light emitting device 120 is upward. The function as an inducing reflective layer becomes impossible. For example, when the core 150a, the shell 150b, 150c, or the ligand of the quantum dot 150 includes sulfur, the metal reflector 131 may be formed. A material, for example, silver (Ag) or the like, may react with the material constituting the quantum dot 150 (2Ag + S → Ag 2 S) to discolor the metal reflector 131. According to the exemplary embodiment of the present invention, the wavelength conversion part 142 including the quantum dot 150 on the upper surface of the encapsulation part 141 encapsulating the light emitting device 120 so as not to contact the metal reflecting part 131. Since the quantum dot 150 and the material constituting the metal reflector 131 react with each other, the metal reflector 131 may be discolored.

Meanwhile, as shown in FIG. 1, the transparent resin layer 143 may be further included on an upper surface of the wavelength converter 142 including the quantum dot 150. When the quantum dot 150 is in contact with moisture and oxygen, the luminous efficiency is reduced, so that the transparent resin layer 143 is formed to cover the wavelength converter 142 to convert the wavelength from the moisture and oxygen. The quantum dot 150 in the 142 may be protected. The transparent resin layer 143 may be made of a silicone or epoxy-based resin, and may further include an epoxy-based desiccant.

2 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. The same reference numerals are used for the same configuration. Hereinafter, the description of the same configuration will be omitted and only the changed configuration will be described. Referring to FIG. 2, the wavelength conversion unit 142 may further include not only a quantum dot 150 but also a wavelength conversion phosphor 151. For example, a quantum dot 150 for converting light emitted from the light emitting device 120 into green and a phosphor 151 for converting wavelength into red light are included in the wavelength converting unit 142 together with various wavelengths. Can emit light. The phosphor 151 may include any one of YAG-based, TAG-based, Silicate-based, Sulfide-based, or Nitride-based fluorescent materials.

3 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Referring to FIG. 3, the protection layer 144 formed on the upper surface of the light emitting device package 100 of the embodiment shown in FIG. 1 may be further included. The protective layer 144 may be formed on the upper surface of the transparent resin layer 150, and may be made of light transmissive glass. As in this embodiment, by forming a protective layer 144 on the upper surface of the transparent resin layer 143 made of silicone or epoxy resin, the inside of the light emitting device package 100 is completely blocked and sealed from the external environment, more stable A light emitting device package capable of operating may be provided. However, unlike the present embodiment, the transparent resin layer 143 may be omitted, and the protective layer 144 may be formed directly on the upper surface of the wavelength conversion part 142.

4 is a cross-sectional view schematically showing a light emitting device package according to another embodiment of the present invention. Unlike the embodiment illustrated in FIG. 3, irregularities may be formed on the surface of the protective layer 144. The unevenness may be formed to have a regular or irregular period, through which the external light extraction efficiency can be improved. In this case, the formation of the uneven structure may be performed by using a dry or wet etching process, etc., but it is desirable to form the uneven structure having irregular sizes, shapes, cycles, etc. by using wet etching. On the other hand, when not including the protective layer 144, the uneven structure may be formed on the transparent resin layer 43 as well as the protective layer 144, the same effect to improve the external light extraction efficiency Can be obtained.

5 is a schematic cross-sectional view of a semiconductor light emitting device package according to still another embodiment of the present invention. Referring to FIG. 5, the semiconductor light emitting device package 100 according to the present exemplary embodiment may include a package body 130, flat leadframes 110a and 110b mounted on the package body, and the leadframe 110a. And a light emitting element 120 electrically connected to 110b, an encapsulation portion 141 formed in the concave portion to encapsulate the light emitting element 120, and the light emitting element in the concave portion. A wavelength of light emitted from the light emitting device 120 is formed on the upper surface of the metal reflector 131 and the encapsulation part 141 to be positioned around the 120 to reflect the light generated from the light emitting device in a desired direction. A wavelength conversion unit 142 including a quantum dot 150 for converting may be provided.

According to the present embodiment, unlike the embodiment illustrated in FIGS. 1 to 4, a pair of lead frames 110a and 110b is formed on the inclined inner surface of the concave portion of the package body 130. It may include a metal reflector 131 to guide the light emitted from the light emitting device 120 to the top. The metal reflector 131 may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Mg, Zn, Pt, Au, etc., in order to favor light reflection. Can improve. Specific examples include Ni / Ag, Zn / Ag, Ni / Al, Zn / Al, Pd / Ag, Pd / Al, Ir / Ag. Ir / Au, Pt / Ag, Pt / Al, Ni / Ag / Pt, and the like, but are not limited to these materials, and various metal or nonmetal materials may be applied as long as the light reflection function is possible. In this case, the wavelength conversion unit 142 including the quantum dots 150 may be disposed so as not to contact the metal reflector 131, and thus, constitute the quantum dots 150 and the metal reflector 131. The metal reflector 131 may be prevented from discoloring by reacting a material.

6 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention. The light emitting device package 200 according to the present embodiment includes a package body 200 having a recess, at least one pair of lead frames 210a and 210b mounted on the package body 200, and the lead frames 210a and 210b. A light emitting device 220 electrically connected to the light emitting device 220 mounted on the concave portion, and formed on the concave portion, and including a quantum dot 250 that converts a wavelength of light emitted from the light emitting device 220. 242 and a metal which is positioned around the light emitting device 220 in the recess to reflect the light generated from the light emitting device 220 in a desired direction, and is made of a material that does not react with the quantum dot 250. It may include a reflector 231. As shown in FIG. 6, at least a part of the metal reflecting part 231 may be formed by bending a part of the pair of lead frames 210a and 210b having the lower surface exposed to the outside, but the lead frame 110a may be formed. , 210b) is not limited thereto.

According to the present exemplary embodiment, the lead frames 210a and 210b provided to the metal reflecting unit 231 may not be reactive with the quantum dot 250 included in the wavelength converting unit 242, for example, palladium. It may be made of at least one of (Pd), platinum (Pt) and gold (Au). In this case, since the metal reflector 231 does not react with the quantum dot 250 included in the wavelength converter 242, the material constituting the quantum dot 250 and the metal reflector 231 react with each other. Discoloration of the metal reflection part 231 can be prevented. Accordingly, the wavelength conversion unit 242 including the quantum dot 250 may be formed in contact with the metal reflector 231 formed in the recess of the package body 231, and the light emitting device package 200 may be structured and manufactured. The process can be simpler. In the present embodiment, the lead frames 210a and 210b provided to the metal reflector 231 may be made of palladium, platinum, gold, or the like, which are themselves metals that do not react with the quantum dots 250. Rather, the same effect may be obtained by plating the surfaces of the lead frames 210a and 210b with the metals.

Although not shown, the transparent resin layer 143 or the protective layer described above on the upper surface of the wavelength conversion part 242 in order to prevent the quantum dot 250 from falling in contact with external moisture or oxygen. 144 may be applied, and external light extraction efficiency may be improved by forming irregularities on the surface of the transparent resin layer 143 or the protective layer 144. In addition, as described above, the wavelength conversion unit 242 further includes a wavelength conversion phosphor, thereby providing a light emitting device package having a range of emission wavelengths.

7 is a schematic cross-sectional view of a light emitting device package according to still another embodiment of the present invention. According to the present embodiment, the pair of lead frames 210a and 210b electrically connected to the light emitting device 220 may be formed in a flat shape, and apart from the lead frames 210a and 210b, the package body The metal reflection part 231 may be formed on the inner side of the recess 230 to surround the light emitting device 220. As described above, the metal reflector 131 may be formed of at least one of a metal having low reactivity, for example, palladium (Pd), platinum (Pt), and gold (Ag), and the pair of lead frames Since 210a and 210b are also in direct contact with the wavelength conversion layer 242, they may be made of at least one of palladium, platinum, and gold, thereby preventing reaction with the material constituting the quantum dot 250.

8 illustrates simulation results of light extraction efficiency of a light emitting device package according to an exemplary embodiment of the present invention. The horizontal axis represents time, the vertical axis represents light extraction efficiency, and the light extraction efficiency is 100% before the quantum dot and the material forming the lead frame react, that is, immediately after the light emitting device package is manufactured. The change of light extraction efficiency is shown.

The comparative example shows a change in light extraction efficiency with time variation of a light emitting device package including a pair of lead frames, a light emitting device mounted on one of the lead frames, and a wavelength conversion unit formed to encapsulate the light emitting devices. ,

Example 1 includes a pair of lead frames, a light emitting element mounted on one of the lead frames, an encapsulation portion encapsulating the light emitting element, and a wavelength conversion portion formed on the encapsulation portion, according to an embodiment of the present invention. The light extraction efficiency of the package is shown to vary.

Example 2 shows a change in light extraction efficiency of a light emitting device package according to another embodiment of the present invention, further comprising a transparent resin layer formed on the upper surface of the wavelength conversion unit in Example 1.

Referring to FIG. 7, it can be seen that the light emitting device package according to the embodiment of the present invention exhibits improved light extraction efficiency in comparison with the comparative example in all regions regardless of time. In particular, in the case of Example 2 further comprising a transparent resin layer on the upper surface of the wavelength conversion portion, it can be seen that the change in the light extraction efficiency with time change is hardly seen.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

100 and 200: light emitting device package 110a, 110b, 210a and 210b: lead frame
120, 220: light emitting elements 130, 230: package body
131 and 231: metal reflecting portion 141: encapsulation portion
142 and 242: wavelength conversion portion 143: transparent resin layer
144: protective layer 150, 250: quantum dot
151: phosphor 150a: core
150a, b: 1st, 2nd shell

Claims (17)

A package body having a recess;
At least one pair of lead frames mounted to the package body;
A light emitting device electrically connected to the lead frame and mounted on the recess;
An encapsulation part formed in the concave part to encapsulate the light emitting device;
A metal reflector positioned around the light emitting element in the recess and reflecting light generated from the light emitting element in a desired direction; And
And a wavelength conversion part formed on an upper surface of the encapsulation part and including a quantum dot for converting a wavelength of light emitted from the light emitting device.
The method of claim 1,
Light emitting device package further comprises a transparent resin layer disposed on the upper surface of the wavelength conversion portion.
The method of claim 2,
Light emitting device package, characterized in that the transparent resin layer is a silicone or epoxy resin.
The method of claim 1,
The light emitting device package is disposed on the wavelength conversion part, further comprising a protective layer made of transparent glass.
The method of claim 4, wherein
The light emitting device package, characterized in that irregularities formed on the surface of the protective layer.
The method of claim 1,
And a part of the at least one pair of lead frames forms at least a part of the metal reflecting part.
The method of claim 1,
The metal reflector is a light emitting device package, characterized in that formed on the inner surface of the recess of the package body.
The method of claim 1,
The wavelength conversion unit light emitting device package further comprises a phosphor.
A package body having a recess;
At least one pair of leadframes mounted to the package body;
A light emitting device electrically connected to the lead frame and mounted on the recess;
A wavelength conversion unit formed in the concave portion and including a quantum dot for converting a wavelength of light emitted from the light emitting device; And
And a metal reflector positioned around the light emitting device in the recess to reflect the light generated from the light emitting device in a desired direction, the metal reflector being made of a material that does not react with the quantum dots.
10. The method of claim 9,
The metal reflecting unit comprises at least one of gold (Au), platinum (Pt) and palladium (Pd).
10. The method of claim 9,
Light emitting device package further comprises a transparent resin layer disposed on the upper surface of the wavelength conversion portion.
The method of claim 11,
The transparent resin layer is a light emitting device package, characterized in that the silicone or epoxy resin.
10. The method of claim 9,
The light emitting device package is disposed on the wavelength conversion part, further comprising a protective layer made of transparent glass.
The method of claim 13,
The light emitting device package, characterized in that irregularities formed on the surface of the protective layer.
10. The method of claim 9,
And a portion of the at least one pair of frames forms at least a portion of the metal reflecting portion.
10. The method of claim 9,
The metal reflector is a light emitting device package, characterized in that formed on the inner surface of the recess of the package body.
10. The method of claim 9,
The wavelength conversion unit further comprises a phosphor.
KR1020100111710A 2010-11-10 2010-11-10 Light emitting device package using quantum dot KR20120050286A (en)

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