KR20110070170A - Top emission type organic electroluminescent device - Google Patents

Abstract

PURPOSE: A top light emitting type organic electroluminescent device is provided to lower the inner surface resistance of a second electrode, wherein the frontal surface of a display area of the second electrode is transparent, thereby increasing display quality and lifetime. CONSTITUTION: A metal pattern(148) is made of a low resistance metal material. A partition wall(149) has a reverse taper structure on the metal pattern. A bank(150) is overlapped with the edge of a first electrode(147). An organic light emitting layer(155) is formed on the first electrode. A second electrode(158) contacts the metal pattern.

Description

Top emission type organic electroluminescent device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to an organic light emitting diode having a top light emission type capable of reducing the surface resistance of a second electrode of the organic light emitting diode formed to have a transparent characteristic over the entire display area. It is about.

The organic light emitting diode, which is one of the flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, the self-luminous self-illuminating type provides high contrast ratio, enables ultra-thin display, easy response time with several microsecond response time, no restriction on viewing angle, and stable at low temperatures. Since it is driven at a low voltage of 5 to 15V DC, it is easy to manufacture and design a driving circuit.

In addition, the manufacturing process of the organic light emitting device is very simple because the deposition (deposition) and encapsulation (encapsulation) equipment is all.

The organic light emitting diode having such characteristics is largely divided into a passive matrix type and an active matrix type. In the passive matrix method, since the scan lines and the signal lines cross each other to form a device in a matrix form, each pixel Since the scan lines are sequentially driven over time in order to drive, the instantaneous luminance must be equal to the average luminance multiplied by the number of lines in order to represent the required average luminance.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off a pixel, is positioned for each subpixel and a first electrode connected to the thin film transistor. Is turned on / off in subpixel units, and the second electrode facing the first electrode becomes a common electrode.

In the active matrix method, a voltage applied to a pixel is charged in a storage capacitor (C _ST ), so that power is applied until the next frame signal is applied, thereby relating to the number of scan lines. Run continuously for one screen without Therefore, even when a low current is applied, the same luminance is achieved, and thus, low power consumption, high definition, and large size can be obtained. Recently, an active matrix type organic light emitting diode has been mainly used.

Hereinafter, the basic structure and operation characteristics of the active matrix organic EL device will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram of one pixel of a typical active matrix organic electroluminescent device.

As illustrated, one pixel of the active matrix organic light emitting diode is a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E. Is made of.

That is, the gate line GL is formed in the first direction, is formed in the second direction crossing the first direction to define the pixel region P, and the data line DL is formed. A power supply line PL is formed to be spaced apart from the DL and to apply a power supply voltage.

In addition, a switching thin film transistor STr is formed at a portion where the data line DL and the gate wiring GL cross, and a driving thin film transistor DTr electrically connected to the switching thin film transistor STr is formed. have. The first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power supply line PL. In this case, the power line PL transfers a power supply voltage to the organic light emitting diode E. In addition, a storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on, and the signal of the data line DL is transferred to the gate electrode of the driving thin film transistor DTr to drive the driving signal. Since the thin film transistor DTr is turned on, light is output through the organic light emitting diode E. At this time, when the driving thin film transistor DTr is in an on state, the level of the current flowing from the power supply line PL to the organic light emitting diode E is determined, and thus the organic light emitting diode E is The gray scale may be implemented, and the storage capacitor StgC maintains the gate voltage of the driving thin film transistor DTr constant when the switching thin film transistor STr is turned off. As a result, even when the switching thin film transistor STr is turned off, the level of the current flowing through the organic light emitting diode E may be maintained until the next frame.

The organic light emitting device for driving is classified into a top emission type and a bottom emission type according to the transmission direction of light emitted through the organic light emitting diode. In this case, the lower emission method has a problem that the aperture ratio is lowered, and thus, the upper emission method has been mainly used in recent years.

2 is a schematic cross-sectional view of a conventional top-emitting organic light emitting display device.

As shown, the first and second substrates 10 and 70 are arranged to face each other, and the edge portions of the first and second substrates 10 and 70 are sealed by a seal pattern 80. . A driving thin film transistor DTr is formed in each pixel region P on the first substrate 10, and a protective layer 40 including a drain contact hole 43 on the driving thin film transistor DTr. The first electrode 47 is connected to the driving thin film transistor DTr through the drain contact hole 43, and the first electrode 47 is formed on the passivation layer 40. Formed. In addition, an organic emission layer 55 including emission material patterns 55a, 55b, and 55c corresponding to red, green, and blue colors is formed on the first electrode 47. The second electrode 58 is formed on the entire surface of the organic emission layer 55. In this case, the first and second electrodes 47 and 58 serve to provide electrons and holes to the organic light emitting layer 55.

The second electrode 58 and the second substrate 70 formed on the first substrate 10 are spaced apart by a predetermined interval by the seal pattern 80 described above.

3 is a cross-sectional view of one pixel area including the driving thin film transistor of the above-described top emission type organic light emitting diode.

As shown, on the first substrate 10, the semiconductor layer 13, the gate insulating film 16, and the gate electrode composed of the first region 13a of pure polysilicon and the second region 13b doped with impurities 20), an interlayer insulating film 23 having a semiconductor layer contact hole 25 exposing the second region 13b, and source and drain electrodes 33 and 36 are sequentially stacked to form a driving thin film transistor DTr. The source and drain electrodes 33 and 36 are connected to a power supply wiring (not shown) and an organic light emitting diode E, respectively.

In addition, the organic light emitting diode E includes a first electrode 47 and a second electrode 58 facing each other with the organic light emitting layer 55 interposed therebetween. In this case, the first electrode 47 is formed in contact with one electrode of the driving thin film transistor DTr for each pixel region P, and the second electrode 58 is formed on the entire surface of the organic light emitting layer 55. It is becoming.

In addition, a second substrate 70 is formed to face the first substrate 10 having the above-described structure and forms an organic EL device 1.

Meanwhile, the first electrode 47 is made of indium tin oxide (ITO) or indium zinc oxide (IZO), which is a transparent conductive material having a high work function value to serve as an anode electrode. Reference numeral 58 is made of a metal material having a low work function value such as magnesium silver alloy (Mg: Ag) or aluminum magnesium alloy (Al: Mg) to serve as a cathode electrode.

However, since the metal material having a low work function value constituting the second electrode 58 serving as a cathode electrode has opaque characteristics, the opaque metal has a thickness of about several thousand micrometers, which is the thickness of a general electrode or an insulating layer. It can not be formed to have. This is because if the second electrode is formed to have a thickness of about several thousand micrometers, light cannot be transmitted.

Accordingly, the second electrode 58 is formed to have a thickness of about several tens of micrometers to several hundreds of micrometers, and the second electrode 58 having such a thickness is formed on the entire display area to increase surface resistance. Is happening. High sheet resistance is deepened by the large area, IR drop, etc., and finally, deterioration of display quality and shortened product life due to deterioration of characteristics and deterioration rate of driving thin film transistor.

In addition, when going to the large screen due to the high sheet resistance of the second electrode, the IR rise problem of the VSS power supply terminal applied to one pixel circuit usually occurs, and the IR rise causes the driving voltage to be raised, thereby increasing the overall voltage. It is causing the power consumption for driving the device increases. In addition, the increase of the VSS power supply terminal in the pixel circuit decreases the minimum voltage for the operation of the driving thin film transistor, thereby adversely affecting the circuit operation of the pixel region, causing problems such as deterioration of display quality.

The present invention has been made to solve the above problems, and an object of the present invention is to reduce the surface resistance of the second electrode itself of the organic light emitting diode formed on the uppermost layer in the organic light emitting device of the top emission type, the characteristics of the thin film transistor An object of the present invention is to provide a top emission type organic light emitting device capable of preventing degradation and degradation of display quality.

According to an aspect of the present invention, there is provided an organic light emitting display device including: a gate and a data line formed to cross each other with an insulating layer at a boundary of the pixel region on a substrate on which a pixel region is defined; A switching thin film transistor connected to the gate and data lines formed in the pixel region and a driving thin film transistor connected to the switching thin film transistor; A protective layer covering the switching and driving thin film transistor and exposing a drain electrode of the driving thin film transistor; A first electrode formed on the protective layer and in contact with the drain electrode of the driving thin film transistor; A metal pattern spaced apart from the first electrode and overlapping with the gate line or data line at a boundary of the pixel region and extending in parallel with each other; A partition wall having an inverse taper structure on the metal pattern and formed parallel to the metal pattern; A bank having a tapered structure at a boundary of the pixel region except for a portion where the partition wall is formed and overlapping an edge of the first electrode; An organic emission layer formed on the first electrode in the bank; And a second electrode formed on the organic emission layer and on the bank, in contact with the metal pattern at a lower portion of the barrier rib in front of the display area.

In this case, the metal pattern may be formed for each pixel region, for each of a plurality of neighboring pixel regions, or may be formed in a wiring form on the entire display region.

를 만족하도록 상기 격벽 및 금속패턴이 형성되며, 상기 격벽의 측단으로부터 상기 금속패턴의 측단간의 수평거리는 5㎛이하의 차이를 갖는 것이 특징이다. In addition, the metal pattern has a first width, the partition wall has a second width equal to or greater than the first width, the distance to the side end of the partition wall relative to the center of the metal pattern and the partition wall, respectively, If the distance to the side end of the metal pattern is x,

The barrier rib and the metal pattern are formed to satisfy the above, and the horizontal distance between the side end of the barrier rib and the side end of the metal pattern has a difference of 5 μm or less.

를 만족하도록 상기 이중 댐형태의 격벽 및 금속패턴이 형성되며, 상기 격벽 각각의 타측단으로부터 이와 인접한 상기 금속패턴의 측단간의 수평거리는 5㎛이하의 차이를 갖는 것이 특징이다. In addition, the partition wall is formed in the form of a single dam on the upper metal pattern or spaced apart from the upper metal pattern is characterized in that it is formed in the form of a double dam. At this time, the distance b to the other end of the partitions other than the one end facing each other, based on the center of each of the partitions having the double dam shape, and the side end of the metal pattern adjacent to these partitions relative to the center of each of the partitions If y is the distance,

The double dam-shaped partition wall and the metal pattern is formed to satisfy the above, and the horizontal distance between the other end of each of the partition wall and the side end of the adjacent metal pattern is characterized in that the difference less than 5㎛.

In addition, the metal pattern is characterized in that it is made of any one of a low resistance metal material of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy.

In addition, the metal pattern is formed to have a thickness thicker than the organic insulating layer, so that the second electrode and the metal pattern is in side contact.

In addition, the second electrode may have a thickness of several tens to several hundred micrometers so that light may be transmitted to a magnesium silver alloy (Mg: Ag) or an aluminum magnesium alloy (Al: Mg), which is a metal material having a relatively low work function value. It is characterized in that it is formed to have.

In addition, the insulating layer is connected to the driving thin film transistor and a power line is formed in parallel with the data line.

The organic light emitting diode according to the present invention is an organic light emitting diode that is formed after depositing an organic light emitting layer by forming a metal pattern or a metal line and partially forming a barrier rib on the upper portion of the organic light emitting device having a low resistance characteristic. The contact between the electrode and the metal pattern or the metal line is made to lower the internal surface resistance of the second electrode.

In addition, the power consumption is reduced by lowering the internal surface resistance of the second electrode, and the display quality and lifespan can be improved by preventing the deterioration of characteristics of the driving thin film transistor.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

4 is a plan view illustrating components formed at boundary portions of some pixel areas in the top emission type organic light emitting diode according to an exemplary embodiment of the present invention, and FIG. 5 is a top emission type organic light emitting diode according to an embodiment of the present invention. FIG. 6 is a cross-sectional view of one pixel area including a driving thin film transistor and an organic light emitting diode, and FIG. 6 is a cross-sectional view of a portion taken along the cutting line VI-VI of FIG. 4. . In this case, for convenience of description, the region in which the driving thin film transistor DTr is formed is defined as the driving region DA and the region in which the switching thin film transistor is formed, although not shown in the drawing, is called a switching region.

As shown, the top emission type organic light emitting diode 101 according to the present invention includes a first substrate 110 having a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E formed thereon; Although not shown in the drawings, the second substrate is configured for encapsulation.

The upper portion of the first substrate 110 is made of pure polysilicon corresponding to the driving area DA and the switching area (not shown), and a central part thereof includes a first area 113a forming a channel and the first area ( 113a) The semiconductor layer 113 including the second region 113b doped with a high concentration of impurities is formed on both sides. In this case, a buffer layer (not shown) made of an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be further formed between the semiconductor layer 113 and the first substrate 110. . The buffer layer (not shown) is to prevent deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 when the semiconductor layer 113 is crystallized.

In addition, a gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113 and above the gate insulating layer 116 in the driving area DA and the switching area (not shown). The gate electrode 120 is formed to correspond to the first region 113a of 113. In addition, the gate insulating layer 116 is connected to a gate electrode (not shown) formed in the switching region (not shown), extends in one direction, and a gate wiring (not shown) is formed.

In addition, an interlayer insulating layer 123 is formed on the gate electrode 120 and the gate wiring (not shown). In this case, the interlayer insulating layer 123 and the gate insulating layer 116 thereunder are formed with a semiconductor layer contact hole 125 exposing each of the second regions 113b located on both sides of the first region 113a. .

Next, an upper portion of the interlayer insulating layer 123 including the semiconductor layer contact hole 125 may intersect with the gate line 119 and define a data line 130 defining the pixel region P, and a power line line spaced apart therefrom. Not shown) is being formed.

In addition, the driving area DA and the switching area (not shown) are spaced apart from each other on the interlayer insulating layer 123 and contact the second area 113b exposed through the semiconductor layer contact hole 125, respectively. Drain electrodes 133 and 136 are formed. In this case, the semiconductor layer 113 including the source and drain electrodes 133 and 136, the second region 113b in contact with the electrodes 133 and 136, and a gate formed on the semiconductor layer 113. The insulating layer 116 and the gate electrode 120 form a driving thin film transistor DTr.

Meanwhile, a switching thin film transistor (not shown) having the same structure as that of the driving thin film transistor DTr is formed in the switching region (not shown). In this case, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring 119, and the data wiring 130, and the data wiring 130 is the switching thin film transistor. It is connected to a source electrode (not shown) of (not shown).

Next, a passivation layer 140 having a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr is formed on the driving and switching thin film transistor DTr (not shown).

In addition, the protective layer 140 is contacted through the drain electrode 136 and the drain contact hole 143 of the driving thin film transistor DTr, and the work function value of each pixel area P is relatively large and transparent. A first electrode 147 made of a conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), is formed.

In this case, the first electrode 147 may form a single layer structure as shown, or may further form a multilayer structure. When the first electrode 147 has a multi-layer structure, a lower layer (not shown) is further formed as a metal material having excellent reflection efficiency in addition to the transparent conductive material, so that light emitted from the lower layer (not shown) to the organic light emitting layer 155 is formed. By reflecting the reflected light to the upper side, the luminance characteristic can be improved.

Meanwhile, in the exemplary embodiment of the present invention, as a characteristic configuration, each pixel region P may be disposed on the passivation layer 140 in correspondence with the gate wiring 119 or the data wiring 130 defining the pixel regions P. A metal pattern having a first width in an island form with any one of low-resistance metal materials, such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy, for each pixel area or a plurality of neighboring pixel areas P. 148 is formed in one direction.

In this case, the cross-sectional shape cut in the width direction of the gate or the data lines 119 and 130 of the metal pattern 148 forms a tapered structure.

In addition, the cross-sectional shape cut in the width direction of the gate or data wires 119 and 130 corresponding to the metal pattern 148 has a cross-sectional structure in which the cross-sectional structure has an inverse taper shape and a second width larger than the first width. ) Are formed, and both ends of the partition wall 149 having a second width greater than the first width are exposed to the outside of the metal pattern 148 having the first width. The metal pattern 148 is formed to have a thickness thicker than the thickness of the organic light emitting layer 155.

In more detail, the positional relationship between the metal pattern 148 and the partition wall 149 will be described. For convenience of description, it is assumed that the partition wall 149 and the metal pattern 148 formed to overlap each other of the metal pattern 148 are symmetrically formed with respect to the center portion thereof. In this case, x is defined as the distance from the center portion to the side end of the metal pattern 148 and a distance from the center portion to the side end of the partition wall 149 is a. The pattern 148 and the partition wall 149 are formed.

-----①

----- ①

When the barrier rib 149 and the metal pattern 148 are formed to satisfy the above-described equation, the second electrode 158 formed through the organic light emitting layer 155 is formed on the lower portion of the barrier rib 149. In each pixel area (P) is formed so as to be in side contact with the metal pattern 148.

On the other hand, the maximum difference between the side end of the partition 149 and the side end of the metal pattern 148 is preferably 5㎛ or less. If larger than this, even if the barrier rib 149 and the metal pattern 148 satisfy the above ① expression, contact between the second electrode 158 and the metal pattern 148 may not be made due to the characteristics formed by the deposition. Because.

Next, as described above, the bank 150 is formed at the boundary of each pixel region P while covering the edge of the first electrode 147 having a single layer or multilayer structure. In this case, the bank 150 is patterned and removed to correspond to a portion where the metal pattern 148 and the barrier rib 149 are formed among the boundary of each pixel region P, thereby removing the pixel region P having the barrier rib 149 formed thereon. It is characterized in that it is formed at the boundary of each pixel area P except the boundary of ().

In addition, an organic emission layer 155 is formed on the first electrode 147 in each pixel region P surrounded by the bank 150 and the partition wall 149. In this case, the organic light emitting layer 155 has a thickness that is thinner than the thickness of the metal pattern 148.

A metal material having a relatively low work function value on the front surface of the organic light emitting layer 155, the bank 150, and the partition wall 149, for example, magnesium silver alloy (Mg: Ag) or aluminum magnesium alloy (Al: Mg) The film has a thickness of several tens of micrometers to several hundred micrometers and is formed on the entire display area.

In this case, the second electrode 158 is in side contact with the side end of the metal pattern 148 at the lower portion of the partition 149, respectively.

Although the organic light emitting layer 155 is formed before the second electrode 158, the second electrode 158 is disposed on the organic light emitting layer 155 due to the structural characteristics in which the barrier rib 149 and the metal pattern 148 are formed. ) And the metal pattern 148 are in side contact.

Meanwhile, the first electrode 147, the organic emission layer 155, and the second electrode 158 sequentially stacked in each pixel area P form an organic light emitting diode E.

In this case, although not shown in the drawing, the organic light emitting layer 165 may be composed of a single layer made of an organic light emitting material, and in order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, and light emission It may be composed of multiple layers of a material layer, an electron transporting layer, and an electron injection layer.

On the other hand, in the organic light emitting device according to the embodiment of the present invention having the above-described configuration, a metal pattern 148 made of a low resistance metal material is provided in each pixel region P in the display area, and the metal pattern Since the second electrode 158 is formed in front of the display area so as to contact 148 and each pixel region P, the internal surface resistance of the second electrode 158 is reduced.

Therefore, even if the second electrode 158 is formed to have a thickness of about tens to several hundreds of microns, which is a very thin thickness to maintain transparency, a metal pattern made of a low resistance metal material selectively at the boundary of each pixel region P in the display area. As the internal resistance is reduced by 148, problems such as increasing the driving voltage or lowering the characteristics of the driving thin film transistor DTr can be suppressed.

7A to 7C are plan views illustrating components formed at boundary portions of some pixel areas of the organic light emitting diode according to the first to third modified examples of the present invention. At this time, all the components are the same as the above-described embodiment, only the shape of the partition and the shape of the metal pattern is different, so only the parts different from the above embodiment will be described. In this case, the same reference numerals are given to the same components.

First, referring to FIG. 7A, in place of the metal pattern formed for each pixel region or for a plurality of neighboring pixel regions of the embodiment as the first modification, the gate or data wiring (alehtl) overlaps with one direction in the display region. Seamlessly low-resistance metal material, for example, any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy has the same wiring form as the gate or data wiring (not shown) and the metal line 151 The barrier rib 149 is formed on the metal line 151 in one direction in the display area.

At this time, the cross-sectional shape cut in the width direction of the metal line 151 and the partition wall 149 has a tapered structure and an inverse taper structure, respectively, as in the embodiment, wherein the metal line 151 and the partition wall 149 Figure 1 is also formed to satisfy the above formula, the metal line 151 is characterized in that it is formed having a thickness thicker than the thickness of the organic light emitting layer (not shown).

In addition, referring to FIG. 8, which is cut along the cutting line VIII-V of FIGS. 7B and 7B as a second modification, the partitions 149 (149a and 149b) are spaced apart from each other on the metal pattern 148. It is characterized by being formed in the form of a double dam in the form. In this case, the horizontal distance from the center of the partitions 149a and 149b having the form of double dams 149a and 149b to the side end thereof is b, and the metal is referred to the center of the partitions 149a and 149b. When defining the distance to the side end of the pattern 148 as y,

-----②

----- ②

The barrier ribs 149a and 149b and the metal pattern 148 having the double dam shape are formed to satisfy the requirements of the present invention. In this case, the difference between the side end of the metal pattern 148 and the side end of the partition walls 149a and 149b corresponding thereto is 5 μm or less.

The feature according to the second modification having such a configuration can also be applied to the first modification described above. That is, referring to FIG. 7C, barrier ribs 149a and 149b having a double dam shape may be formed on the metal line 151 formed in the display area in one direction without interruption as a third modification. Such a metal line 151 may be formed. And the double dam-shaped partition walls 149a and 149b are formed so as to satisfy the above expression (2). At this time, the difference between the side end of the metal line 151 and the side end of the corresponding partition walls 149a and 149b is 5 μm or less.

1 is a circuit diagram of one pixel of a typical active matrix organic electroluminescent device.

Figure 2 is a schematic cross-sectional view of a conventional top-emitting organic light emitting device.

3 is a cross-sectional view of one pixel area including a driving thin film transistor of the top emission type organic light emitting diode illustrated in FIG. 2.

4 is a plan view illustrating components formed at boundary portions of some pixel areas in the top emission type organic light emitting diode according to an exemplary embodiment of the present invention;

FIG. 5 is a cross-sectional view of one pixel area including a driving thin film transistor and an organic light emitting diode as a part of an upper light emitting organic light emitting diode according to an exemplary embodiment of the present invention; FIG.

FIG. 6 is a cross-sectional view of a portion taken along the cutting line VI-VI of FIG. 4. FIG.

7A to 7C are plan views showing components formed at boundary portions in some pixel areas of the organic light emitting diode according to the first to third modified examples of the embodiment of the present invention;

FIG. 8 is a cross-sectional view of a portion taken along the line VII-VII of FIG. 7B. FIG.

<Explanation of symbols for main parts of the drawings>

101: first substrate 116: gate insulating film

119: gate wiring 123: interlayer insulating film

130: data wiring 140: protective layer

147: first electrode 148: metal pattern

149: bulkhead 150: bank

155: organic light emitting layer 158: second electrode

a: horizontal distance from the center of bulkhead to its side

E: organic light emitting diode

P: pixel area

x: horizontal distance from the center of a metal pattern to its side

Claims (9)

Gate and data lines formed to cross each other with an insulating layer at a boundary of the pixel area on a substrate on which a pixel area is defined; A switching thin film transistor connected to the gate and data lines formed in the pixel region and a driving thin film transistor connected to the switching thin film transistor; A protective layer covering the switching and driving thin film transistor and exposing a drain electrode of the driving thin film transistor; A first electrode formed on the protective layer and in contact with the drain electrode of the driving thin film transistor; A metal pattern spaced apart from the first electrode and overlapping with the gate line or data line at a boundary of the pixel region and extending in parallel with each other; A partition wall having an inverse taper structure on the metal pattern and formed parallel to the metal pattern; A bank having a tapered structure at a boundary of the pixel region except for a portion where the partition wall is formed and overlapping an edge of the first electrode; An organic emission layer formed on the first electrode in the bank; A second electrode formed on the organic light emitting layer and the bank and in contact with the metal pattern under the partition on the entire display area; An upper light emitting organic light emitting device comprising a. The method of claim 1, The metal pattern may be formed for each pixel area, or for each of a plurality of neighboring pixel areas, or may be formed in the form of a wire in front of the display area. The method according to claim 1 or 2, The metal pattern has a first width, and the barrier rib has a second width equal to or greater than the first width, and the distance a to the side end of the barrier rib a, the metal pattern, respectively, based on the center of the metal pattern and the barrier rib. If the distance to the side end of x is

The barrier rib and the metal pattern is formed so as to satisfy the above, the horizontal distance between the side end of the barrier rib and the metal pattern is characterized in that the difference between 5㎛ or less top-emitting organic light emitting device. The method according to claim 1 or 2, The barrier rib is formed in the form of a single dam on the upper portion of the metal pattern or an upper light emitting type organic light emitting device, characterized in that formed in the form of a double dam spaced apart from the upper portion of the metal pattern. The method of claim 4 Distance to the other end except for one end of the partitions facing each other based on the center of each of the partitions having a double dam shape, the distance to the side end of the metal pattern adjacent to these partitions relative to the center of each of the partitions If y is

The double dam-shaped partition wall and the metal pattern is formed to satisfy the above, and the horizontal distance between the other end of each of the partition wall and the side end of the adjacent metal pattern is less than 5㎛ characterized in that the organic light emitting method device. The method according to claim 1 or 2 The metal pattern is an upper light emitting organic light emitting device, characterized in that made of any one of a low resistance metal material aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy. The method according to claim 1 or 2,  And the metal pattern is formed to have a thickness thicker than that of the organic insulating layer, so that the second electrode and the metal pattern are in side contact with each other. The method according to claim 1 or 2, The second electrode may have a thickness of several tens to several hundred micrometers so that light may be transmitted to a magnesium silver alloy (Mg: Ag) or an aluminum magnesium alloy (Al: Mg), which is a metal material having a relatively low work function value. An upper light emitting organic light emitting device, characterized in that formed. The method according to claim 1 or 2, The upper light emitting organic light emitting diode of claim 1, wherein a power line is formed on the insulating layer and is connected to the driving thin film transistor.

Images