KR20110047887A - Temperature detect circuit - Google Patents
Temperature detect circuit Download PDFInfo
- Publication number
- KR20110047887A KR20110047887A KR1020090104684A KR20090104684A KR20110047887A KR 20110047887 A KR20110047887 A KR 20110047887A KR 1020090104684 A KR1020090104684 A KR 1020090104684A KR 20090104684 A KR20090104684 A KR 20090104684A KR 20110047887 A KR20110047887 A KR 20110047887A
- Authority
- KR
- South Korea
- Prior art keywords
- temperature
- value
- pulse
- reference value
- generating
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2272—Latency related aspects
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
The present invention relates to a temperature detection circuit for accurately detecting the temperature in the product for the smooth operation of the product. The present invention provides reference value generating means for generating a reference value to be used for temperature detection; Voltage generating means for generating an analog voltage with respect to the temperature detection value; Pulse generating means for varying and generating the period of the enable pulse signal based on the reference value level in accordance with the detection temperature; And a comparison means for comparing the analog voltage value and the reference value according to the detection temperature and outputting the comparison value when the variably adjusted enable pulse signal is input.
Description
The present invention relates to a temperature detection circuit for accurately detecting the temperature in the product for the smooth operation of the product.
The semiconductor device is used in various fields, but one of them is used to store various kinds of data. Since such semiconductor memory devices are used in various portable devices, including desktop computers and notebook computers, large capacity, high speed, small size, and low power are required.
In addition, semiconductor devices use various types of internal voltages by using externally supplied power voltages. In particular, in the case of a semiconductor memory device (DRAM), a voltage of VCORE which is a voltage used in a core region of the memory device, a VPP voltage which is higher than an external potential VDD applied to a cell transistor gate (word line), and a cell The negative voltage VBB, which is lower than the ground voltage VSS used for the bulk of the transistor, is used. This internal voltage must be at a constant level for PVT (Process, Voltage, Temperature) changes at low operating supplies.
Therefore, in order to control the normal operation of the semiconductor device, it is necessary to detect the operating temperature of the product and perform appropriate control according to the rise or fall of the temperature. Therefore, the semiconductor device includes a configuration for detecting a temperature and transferring the same to a device such as a CPU.
However, in the process of detecting the temperature and transmitting it to the CPU, the conventional temperature detector generates enable pulses at regular intervals without considering the temperature of the region, and converts current or voltage, which is an analog value for the detected temperature, into a digital value. Is outputting. The enable pulse is a value generated by the oscillation address OSCILLATION ADDRESS of the clock signal and the mode register set MRS. Therefore, when the enable pulse is generated at the same period in the conventional temperature detection device, there is a problem of generating an incorrect temperature code as an output value at a value close to an absolute value.
Accordingly, an object of the present invention is to provide a temperature detection circuit capable of accurately detecting a temperature around a product and delivering an accurate temperature code to a CPU in accordance with the sensed temperature.
A temperature detection circuit according to an embodiment of the present invention for achieving the above object comprises: reference value generating means for generating a reference value to be used for temperature detection; Voltage generating means for generating an analog voltage with respect to the temperature detection value; Pulse generating means for varying and generating the period of the enable pulse signal based on the reference value level in accordance with the detection temperature; And a comparison means for comparing the analog voltage value and the reference value according to the detection temperature and outputting the comparison value when the variably adjusted enable pulse signal is input.
The present invention variably adjusts the enable operation cycle according to the change of the ambient temperature at the time of detecting the temperature of the product. With this control, the present invention enables accurate temperature detection according to the ambient temperature, and delivers accurate information to the CPU, thereby achieving the effect of smooth operation control of the product.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In addition, in the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a control block diagram for temperature detection according to an embodiment of the present invention.
When the voltage initialization value VPWRUP is input, the
When the temperature detection value TEMP_SENSEON is input, the
When the temperature reading signal and the clock signal are input, the
The
On the other hand, the present invention is characterized in that the enable pulse period value is adjusted differently according to the analog voltage value of the detection temperature when the temperature detection is performed in the portion close to the reference voltage and when the temperature is detected in the portion far from the reference voltage. have. Therefore, the present invention requires a control process for adjusting the enable pulse period value.
2 to 4 show a detailed configuration of the
First, referring to FIG. 2, the
That is, the first comparator is a configuration for judging whether the detected temperature value is included in the constant level range 1 raised on the basis of the reference value REF level. The second comparator is configured to determine whether the detected temperature value is included in the
Therefore, when the enable signal EN generated by the combination of the first and second comparators is a high signal, the temperature detection value is determined to be located near the reference value REF. On the contrary, when the enable signal EN generated by the combination of the first and second comparators is a low signal, it is determined that the temperature detection value is located at a predetermined level or more away from the reference value REF.
Next, the
FIG. 4 illustrates a control configuration diagram of generating the enable pulse signal ENABLEP using the enable signal EN and the oscillator signals OSC1 and OSC2 shown in FIGS. 2 and 3.
That is, the first oscillator signal OSC1 and the enable signal EN pass through a calculator composed of a NAND gate and an inverter to generate a first pulse signal. In addition, the second oscillator signal OSC2 and the inverted signal ENB of the enable signal pass through a calculator composed of a NAND gate and an inverter to generate a second pulse signal. The signal passing through the two calculators is selected from an operator consisting of a combination of a noah gate and an inverter and outputs the signal. The pulse signal output from the NOA gate and a signal generated by passing the pulse signal through a delay circuit composed of a plurality of inverters are combined in a calculator consisting of a NAND gate and an inverter to generate a final pulse signal.
Accordingly, according to the above configuration, the
The above-described preferred embodiment of the present invention is disclosed for the purpose of illustration, and may be applied to a case in which the enable operation period is variably adjusted according to the change of the ambient temperature when the temperature of the product is detected. Therefore, those skilled in the art will be able to improve, change, substitute or add other embodiments within the technical spirit and scope of the present invention disclosed in the appended claims.
1 is a block diagram of a temperature detection circuit according to an embodiment of the present invention;
2 is a block diagram of a comparator included in the pulse generator shown in FIG.
3 is an exemplary oscillator signal used in the pulse generator shown in FIG.
4 is a block diagram of a pulse generator included in the pulse generator shown in FIG.
Explanation of symbols on the main parts of the drawings
10: reference value generator 20: voltage generator
30: pulse generator 40: comparator circuit
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090104684A KR20110047887A (en) | 2009-10-30 | 2009-10-30 | Temperature detect circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090104684A KR20110047887A (en) | 2009-10-30 | 2009-10-30 | Temperature detect circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110047887A true KR20110047887A (en) | 2011-05-09 |
Family
ID=44239104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090104684A KR20110047887A (en) | 2009-10-30 | 2009-10-30 | Temperature detect circuit |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20110047887A (en) |
-
2009
- 2009-10-30 KR KR1020090104684A patent/KR20110047887A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2573531B1 (en) | Threshold-based temperature-dependent power/thermal management with temperature sensor calibration | |
KR100854463B1 (en) | Temperature sensor circuit and semiconductor memory device | |
JP6621929B2 (en) | Method and apparatus for digital detection and control of voltage drop | |
US7560978B2 (en) | Internal voltage detection circuit | |
US9292025B2 (en) | Performance, thermal and power management system associated with an integrated circuit and related method | |
JP2007047177A (en) | On-chip temperature sensor, temperature detection method, and refresh control method using this | |
US9275718B2 (en) | Semiconductor devices with periodic signal generation circuits and semiconductor systems including the same | |
KR20060044240A (en) | Oscillator of semiconductor device | |
US7539072B2 (en) | Semiconductor memory device | |
KR20110097470A (en) | Temperature sensor | |
US7969795B2 (en) | Negative voltage generator for use in semiconductor memory device | |
US8896366B2 (en) | Internal voltage generation circuit of semiconductor device and method for operating the same | |
KR101132796B1 (en) | Temperature sensor | |
KR101139102B1 (en) | Voltage supply circuit and integrated circuit having the same | |
US9130545B2 (en) | Period signal generation circuits | |
KR100656432B1 (en) | Apparatus and method for controlling column selecting signal of semiconductor memory | |
KR100795026B1 (en) | Apparatus and method for generating internal voltage in semiconductor integrated circuit | |
US10197455B2 (en) | Thermal oscillator | |
KR20110047887A (en) | Temperature detect circuit | |
KR100843226B1 (en) | On-chip thermometer, temperature detection method and refresh control method using the same | |
KR100784909B1 (en) | Circuit for generating internal voltage of semiconductor memory | |
KR20150051471A (en) | Semiconductor device and method of driving the same | |
US7990206B2 (en) | Device for supplying temperature dependent negative voltage | |
KR20130135701A (en) | Semiconductor device | |
US11378603B2 (en) | Voltage or current detector for a memory component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |