KR20100134480A - Hetero-substrate, iii-nitride semiconductor devices using the same and manufacturing method of thereof - Google Patents

Abstract

PURPOSE: The nitride type semiconductor device using the different substrate, and that and a method of manufacture thereof are that non-polar or the antipolarity side nitride layer the crystal growth mode is controlled is formed in non-polar or the antipolarity side of the Base substrate. CONSTITUTION: The base substrate(11) having one among non-polar or the antipolarity side is prepared. The nitride system crystal growth nucleus layer(12) is formed in the side of the Base substrate. The first buffer layer(13) is grown up on the crystal growth nucleus layer. The lateral growth layer(14) is grown up on the first buffer layer.

Description

Hetero-substrate, III-nitride semiconductor devices using the same and manufacturing method of

The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a heterogeneous substrate having a high-quality nonpolar or semipolar nitride layer formed by controlling a crystal growth mode on a nonpolar or semipolar surface of a heterogeneous substrate such as sapphire, and The nitride semiconductor device used and its manufacturing method are related.

Nitride-based single crystal semiconductor substrates such as gallium nitride (GaN), which are used as substrates in the manufacture of semiconductor devices, are mostly nitride films of c plane ({0001} plane), mainly on c plane ({0001} plane) of sapphire substrates. It is obtained after growing by the method of Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) or hydride vapor phase epitaxy (HVPE).

The c-plane nitride-based single crystal film thus formed has a polarity because, for example, a gallium layer and a nitrogen layer are repeatedly stacked in the c-crystal axis direction. For example, in the case of GaN / AlGaN / InGaN heterostructures with c planes, the electronic band structure in the heterostructures is caused by a strong electric field formed by spontaneous polarization or piezoelectric polarization. By tilting the band structure, the carrier recombination rate is reduced, resulting in lower quantum efficiency.

In detail, there is a polarization discontinuity in the c-axis growth direction, which creates a fixed sheet charge at the surface or interface, resulting in an internal electric field in the quantum well. The separation of electron and hole wavefunctions shifts light emission toward long wavelengths, and when an electric field is applied, light emission wavelengths shift toward shorter wavelengths, making it difficult to develop devices for long wavelengths.

In contrast, the a-plane ({11-20} plane) and the m-plane ({1-100} plane) nitride-based crystals have non-polar characteristics, so the problems of the c-plane nitride-based single crystal described above That is, the problem that the quantum efficiency is reduced by the internal electric field due to polarization can be overcome. A-plane nitride-based crystals do not have a polarization field, so no band bending occurs, and a stark effect is not observed in a structure in which AlGaN / GaN / InGaN quantum wells are grown on a non-polar crystal plane. The non-polar nitride-based heterostructure on the a-side has a possibility of being usefully used in high efficiency UV-visible light emitting devices and high electron mobility transistors (HEMTs).

In addition, the a-plane nitride-based film has a higher concentration of p-doping than the c-plane nitride-based single crystal film. This is because the energy on the a side is much lower because the activation energy is 118 meV on the a side and 170 meV on the c side. In general, as more Al is included in GaN, the doping efficiency is drastically reduced, which is higher in the a plane than the c plane.

As described above, although the nonpolar plane nitride-based single crystal film has more advantages than the c plane, the reason why it is not manufactured and commercialized as a substrate is that it is difficult to obtain the surface of the obtained smooth film, and the internal defects are relatively higher than the c plane. Because it has.

Specifically, the a-plane nitride-based single crystal film is obtained by growing on the r-plane ({1-102} plane) sapphire single crystal substrate. In this case, a nitride film having a surface shape such that the ridges having {1010} planes extending in the <0001> direction instead of the flat shape film is formed, and in-plane thermal expansion with anisotropy of lattice constant is formed. Because of the large anisotropy along the crystallographic direction of the modulus, a strong compressive stress acts in the <1-100> direction of the nitride.

In the case where the a-plane nitride single crystal is grown into a thick film or a thin film, a film in which the mountain structure is not coalesced is grown, which forms many defects in the film. Poor surface geometry and defects make the device difficult to fabricate, and its presence on the substrate surface ultimately adversely affects the performance of the final thin film device.

Accordingly, an object of the present invention is to provide a heterogeneous substrate in which nitrides are laminated which can flatten the surface shape of a nitride layer of a nonpolar or semipolar plane and reduce internal defects using multiple buffer layers, a nitride semiconductor device using the same, and fabrication thereof It is to provide a method.

Another object of the present invention is to provide a heterogeneous substrate on which nitrides are laminated, which can easily form a flat nitride layer on a nonpolar or semipolar surface of a heterogeneous substrate, to improve yield, a nitride semiconductor device using the same, and a method of manufacturing the same. will be.

In order to achieve the above object, the present invention provides a heterogeneous substrate having a high quality nitride layer formed by adjusting the crystal growth mode on the nonpolar or semipolar surface of the heterogeneous substrate, a semiconductor device using the same, and a manufacturing method thereof.

The present invention provides a heterogeneous substrate including a base substrate, a crystal growth nucleus layer, a first buffer layer, a horizontal growth layer, and a second buffer layer. The base substrate has either a nonpolar or semipolar surface. The crystal growth nucleus layer is formed on the surface of the base substrate. The first buffer layer is grown on the crystal growth nucleus layer and grows faster in the vertical direction than in the horizontal direction. The horizontal growth layer is grown on the first buffer layer and grows faster in the horizontal direction than in the vertical direction. The second buffer layer is grown on the horizontal growth layer.

The heterogeneous substrate according to the present invention further includes at least one silicon nitride (SiN _x ) layer formed at an interface or inside of the first buffer layer, the horizontal growth layer, or the second buffer layer, and having a plurality of holes uniformly formed therein. do. At this time, crystals under the silicon nitride layer grow through the holes of the silicon nitride layer to cover the silicon nitride layer.

The present invention also provides a preparation step of preparing a base substrate having either a nonpolar or semipolar plane, a crystal growth nucleus layer forming step of forming a nitride-based crystal growth nucleus layer on the surface of the base substrate, a first buffer layer on the crystal growth nucleus layer Growing a first buffer layer to grow faster in the vertical direction than the horizontal direction, growing a horizontal growth layer on the first buffer layer, but growing a horizontal growth layer faster in the horizontal direction than the vertical direction, Provided is a method of manufacturing a heterogeneous substrate on which nitrides are stacked including a second buffer layer growing step of growing a second buffer layer on the horizontal growth layer.

The present invention also provides a nitride-based semiconductor device using a heterogeneous substrate on which the above-described nitride is laminated. The nitride-based semiconductor device is a heterogeneous substrate on which the above-described nitride is stacked, a first nitride layer of either n-type or p-type formed on the second buffer layer, an active layer formed on the first nitride layer, and formed on the active layer and the first nitride And a second nitride layer of the type opposite to the layer.

According to the present invention, a nonpolar or semipolar plane nitride layer is formed on the nonpolar or semipolar plane of the base substrate to form a nonpolar or semipolar plane nitride layer, thereby forming a nonpolar or semipolar plane nitride layer having a flat and low internal defect on the base substrate. Can be. That is, after the crystal growth nucleus layer is formed on the base substrate, the first buffer layer is formed on the crystal growth nucleus layer to grow faster in the vertical direction than in the horizontal direction, and on the first buffer layer so as to grow faster in the horizontal direction than in the vertical direction. By forming the second buffer layer on the horizontal growth layer after forming the horizontal growth layer, a nonpolar or semipolar surface nitride layer having a flat and small internal defect on the nonpolar or nonpolar surface of the base substrate can be formed.

In particular, after the silicon nitride layer having a plurality of holes is formed between the horizontal growth layer on the first buffer layer and the second buffer layer, the crystals are grown through the exposed portions of the silicon nitride layer in the horizontal direction of the crystals. It is possible to promote the growth of a to form a planar nitride layer with a small internal defects.

Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.

Hereinafter, a method of manufacturing a nitride substrate in which a nitride is stacked according to an embodiment of the present invention will be described with reference to FIGS. 1 to 7. 1 is a flowchart illustrating a method of manufacturing a heterogeneous substrate on which nitrides are stacked according to an embodiment of the present invention. 2 to 7 are views showing each step according to the manufacturing method of FIG.

As shown in FIG. 2, a base substrate 11 having either a nonpolar or semipolar surface is prepared (S61). A sapphire substrate may be used as the base substrate 11, and a substrate such as SiC or ZnO or Si may be used. In this case, as the nonpolar or semipolar plane, a plane except for c plane, a plane, r plane, m plane or other planes may be used. In this embodiment, a sapphire substrate having an r surface is used as the base substrate 11.

Next, a-plane nitride including a crystal growth nucleus layer 12, a first buffer layer 13, a horizontal growth layer 14, a silicon nitride layer 15, and a second buffer layer 17 on the surface of the base substrate 11. Form layer 18. The a-plane nitride layer 18 can be formed by MOCVD, MBE, or HVPE, and in this embodiment, by MOCVD.

Next, as shown in FIG. 3, the nitride-based crystal growth nucleus layer 12 is formed on the surface of the base substrate 11 (S63). In this case, the nitride-based crystal growth nucleus layer 12 is formed at a ratio of V / III at 50 to 3000 in a nitrogen or hydrogen atmosphere of 450 ° C to 1300 ° C and 30 to 760 torr. Since the crystal growth nucleus layer 12 affects the crystallinity of the a-plane nitride layer 18 growing thereon, the crystal growth nucleus layer 12 is formed to a thickness of 5 to 700 nm, preferably 70 to 70 nm. It is formed at 250nm. In this case, the nitride-based crystal growth nucleus layer 12 may be formed of one of GaN, Al _x Ga _1-x N, and In _x Ga _1-y N (0 <x, y <1). In this embodiment, a-plane GaN was used as the nitride-based crystal growth nucleus layer 12.

Next, as shown in FIG. 4, the first buffer layer 13 is grown on the crystal growth nucleus layer 12 (S65). The first buffer layer 13 is formed on the crystal growth nucleus layer 12 by growing faster in the vertical direction than in the horizontal direction. The first buffer layer 13 is grown in an atmosphere having a V / III ratio of 50 to 2000, 450 to 1300 ° C, and 100 to 760 torr. The first buffer layer 13 grown under such a condition has a rough surface, but the FWHM (full width of half maximum) value of a surface is reduced by scanning X-Ray diffraction (XRD) in a direction parallel to the m-axis. You can get the result.

Next, as shown in FIG. 5, the horizontal growth layer 14 is grown on the first buffer layer 13 (S67). The horizontal growth layer 14 is formed on the first buffer layer 12 by growing faster in the horizontal direction than in the vertical direction. The horizontal growth layer 14 is grown at a ratio of V / III of 2 to 1000, 800 ° C to 1500 ° C, and 10 to 300 torr. The horizontal growth layer 14 is grown at a relatively low V / III ratio compared to the first buffer layer 13. The horizontal growth layer 14 grown under such a condition has a flat mirror-like surface, and the FWHM value of the a plane scanned by XRD in the direction parallel to the c-axis can be obtained. This shows that the crystallinity of gallium nitride grown in the c-axis direction is good. In addition, it can be seen that the FWHM value of the a plane scanned by XRD in a direction parallel to the c-axis decreases.

Next, as shown in FIGS. 6A and 6B, a silicon nitride layer 15 (SiN _x ) having a plurality of holes 16 on or in the horizontal growth layer 14 or at an interface between the first buffer layer and the horizontal growth layer. To form (S69). That is, the silicon nitride layer 15 is deposited in the horizontal growth layer 14 or at the interface between the first buffer layer and the horizontal growth layer, which is Ga (gallium), In (indium), Al, which are Group III elements in the MOCVD. The silicon nitride layer is formed using SiH4 (siylene), or Si2H6 (disilylene) and NH3 (ammonia) gas in the state of stopping supply of (aluminum). At this time, a plurality of holes 16 are formed in the silicon nitride layer 15 by themselves, and the horizontal growth layer 14 below is exposed.

As shown in FIG. 7, the second buffer layer 17 covering the silicon nitride layer 15 is grown to complete the manufacturing process of the nitride substrate 10 in which the nitride according to the present embodiment is stacked (S71). The second buffer layer 17 is grown in an atmosphere having a V / III ratio of 50 to 2000, 450 to 1300 ° C., and 30 to 760 torr, and doping Si for the n-type semiconductor as necessary. The second buffer layer should have the same horizontal growth rate and vertical growth rate, or have a faster horizontal growth rate. It can be seen that the second buffer layer 17 grown under such conditions maintains a flat mirror surface and improves crystallinity. In this case, the crystal growth nucleus layer 12, the first buffer layer 13, the horizontal growth layer 14, the silicon nitride layer 15, and the second buffer layer 17 formed on the base substrate 11 are a plane nitride layer 18. To form.

 In particular, the second buffer layer 17 or the horizontal growth layer is grown on the layer 14 exposed through the holes 16 of the silicon nitride layer 15 to cover the silicon nitride layer 15. That is, crystals do not grow directly on the silicon nitride layer 15, but crystals grow through portions of the first buffer layer 14 exposed through the holes 16 of the silicon nitride layer 15. In this case, as shown in FIGS. 6B and 7, the silicon nitride layer 15 may be covered while growing faster in the vertical direction V in the horizontal direction L, and thus, the second buffer layer 17 may be formed. It is formed flat and has good crystallinity.

As described above, in the present exemplary embodiment, the a-plane nitride layer 18 is formed on the non-polar or semi-polar surface of the base substrate 11 to form the a-plane nitride layer 18, thereby providing a flat and low internal defect a on the base substrate 11. The cotton nitride layer 18 can be formed. That is, after the crystal growth nucleus layer 12 is formed on the base substrate 11, the first buffer layer 13 is formed on the crystal growth nucleus layer 12 so as to grow faster in the vertical direction than in the horizontal direction, and the first buffer layer The second buffer layer 17 is formed on the horizontal growth layer 14 after the horizontal growth layer 14 is formed so as to grow faster in the horizontal direction than the vertical direction, thereby forming a flat surface on the base substrate 11. In addition, the a-side nitride layer 18 having small internal defects may be formed.

In particular, after the silicon nitride layer 15 having the plurality of holes 16 is formed between the horizontal growth layer 14 and the second buffer layer 17 on the first buffer layer 13, the silicon nitride layer 15 is formed. By growing the crystal through the holes exposed to the surface, the growth of the crystal in the horizontal direction can be promoted to form a planar nitride layer 18 having a flat and small internal defect.

At this time, the present embodiment discloses an example in which the silicon nitride layer 15 is formed on the horizontal growth layer 14 in step S69, but is not limited thereto. For example, the silicon nitride layer may be formed at or at an interface of the first buffer layer, the horizontal growth layer, or the second buffer layer. That is, the silicon nitride layer may be formed inside the horizontal growth layer. First, a first horizontal growth layer is grown on the first buffer layer. Next, a silicon nitride layer having a plurality of holes is formed uniformly on the first horizontal growth layer. The first horizontal growth layer exposed through the holes of the silicon nitride layer is grown to grow a second horizontal growth layer covering the silicon nitride layer.

Alternatively, a silicon nitride layer may be formed inside the second buffer layer. First, a 2-1 buffer layer is grown on the horizontal growth layer. Next, a silicon nitride layer having a plurality of holes is formed uniformly on the 2-1 buffer layer. The 2-1 buffer layer exposed through the holes of the silicon nitride layer is grown to grow the 2-2 buffer layer covering the silicon nitride layer.

Preferably, the silicon nitride layer 15 is formed between the horizontal growth layer 14 and the second buffer layer 17 on the first buffer layer 13. On the other hand, when the a-plane nitride layer is formed on the r surface of the base substrate 11, the silicon nitride layer may not be formed.

The dissimilar substrate 10 manufactured according to the present embodiment has a structure in which an r surface sapphire substrate is used as the base substrate 11 and an a surface nitride layer 18 is formed on the r surface of the sapphire substrate. At this time, GaN was used as the a surface nitride 18. The hetero substrate 10 manufactured according to this embodiment has a flat surface on the r surface of the base substrate 11 as shown in FIGS. It can be seen that formed.

As shown in FIG. 8, the crystal growth nucleus layer 12 can confirm that crystallinity is good at a portion having a thickness of 150 nm. 8 is a graph showing a rocking curve of the FWHM value according to the thickness of the crystal growth nucleus layer 12.

When the first buffer layer 13 and the horizontal growth layer 14 are grown sequentially, the first buffer layer 13 is grown at a high V / III ratio and pressure compared to the horizontal growth layer 14, and thus, FIG. As shown, it can be easily seen that the internal defects are reduced at the interface between the first buffer layer 13 and the horizontal growth layer 14. FIG. 9 is a transmission electron microscope (TEM) photograph showing the first buffer layer 13 and the horizontal growth layer 14 of the hetero substrate 10 on which the nitrides of FIG. 7 are stacked.

By growing the second buffer layer 17 under process conditions similar to those of the growth of the first buffer layer 13, as shown in FIG. 10, the surface of the second buffer layer 17 is flat and almost free from defects. have. FIG. 10 is a TEM photograph showing that defects are almost eliminated in the second buffer layer 17 of the hetero substrate 10 on which the nitrides of FIG. 7 are stacked.

11 is a graph showing the photoluminescence (PL) results measured at 20K. Referring to FIG. 11, it can be seen that the heterogeneous substrate on which the nitride is stacked according to the present embodiment has the strongest intensity of the peak emitted from the band edge.

Looking at the surface shape of the AFM (atomic force microscope) measured the surface of the nitride substrate is laminated at 10μm x 10μm according to this embodiment, as shown in Figure 12, the root mean square (RMS) roughness is about 1.2 It can be seen that nm has a very flat surface.

Such a heterogeneous substrate in which the nitride is stacked according to the present embodiment may be used as a substrate for various electronic devices, including light emitting devices such as LEDs and laser diodes.

For example, FIG. 13 is a cross-sectional view illustrating a nitride based semiconductor device 100 using a heterogeneous substrate 10 on which nitrides are stacked according to an embodiment of the present invention.

Referring to FIG. 13, in the hetero substrate 100 in which nitrides are stacked according to the present exemplary embodiment, the first nitride layer 20, the active layer 30, and the second layer are formed on the a-side nitride layer 18 of the semiconductor substrate 10. The nitride layer 40 is a green LED having a stacked structure sequentially. The thickness of the a-plane nitride layer 18 is about 4 mu m. The first nitride layer 20 is an n-type semiconductor including an n-type dopant, and an n-GaN-based group III-V nitride compound semiconductor may be used. The first nitride layer 20 may be formed to a thickness of about 2 μm. The active layer 30 may be formed on the first nitride layer 20 with InGaN / GaN 4QWs having a thickness of 4 nm / 10 nm. The second nitride layer is a p-type semiconductor including a p-type dopant, and a p-GaN-based group III-V nitride compound semiconductor may be used. The second nitride layer 40 may be formed to a thickness of about 150 nm.

As shown in FIG. 14, the nitride based semiconductor device 100 according to the present exemplary embodiment may show a typical diode curve in an I-V curve. In addition, the nitride-based semiconductor device 100 according to the present embodiment, as shown in Figure 15 and 16, it can be seen that the luminance increases as the current increases in the L-I curve. In addition, it can be seen that the color of light generated from the nitride-based semiconductor device 100 is changed according to the thickness of the active layer 30, the concentration of In, and the like.

In the present exemplary embodiment, a structure in which an n-type first nitride layer 20, an active layer 30, and a p-type second nitride layer 40 are sequentially stacked on the a-plane nitride layer 18 is illustrated. It is not. For example, the nitride semiconductor device may have a structure in which a p-type first nitride layer, an active layer, and an n-type second nitride layer are formed on the a-plane nitride layer.

On the other hand, the embodiments of the present invention disclosed in the specification and drawings are merely presented specific examples to aid understanding, and are not intended to limit the scope of the present invention. In addition to the embodiments disclosed herein, it is apparent to those skilled in the art that other modifications based on the technical idea of the present invention may be implemented.

1 is a flowchart illustrating a method of manufacturing a heterogeneous substrate in which nitrides are stacked according to an embodiment of the present invention.

2 to 7 are views showing each step according to the manufacturing method of FIG.

FIG. 8 is a graph showing FWHM values according to the thickness of the crystal growth nucleus layer of FIG. 7.

FIG. 9 is a SEM photograph showing the first buffer layer and the horizontal growth layer of the hetero substrate on which the nitride of FIG. 7 is stacked.

FIG. 10 is a SEM photograph showing the horizontal growth layer and the second buffer layer of the nitride substrate of FIG. 7 stacked thereon. FIG.

FIG. 11 is a graph illustrating PL results measured at 20K of a heterogeneous substrate having nitrides of FIG. 7 stacked thereon. FIG.

FIG. 12 is a surface photograph measured by AFM of a heterogeneous substrate on which the nitride of FIG. 7 is laminated. FIG.

FIG. 13 is a cross-sectional view illustrating a nitride based semiconductor device using a heterogeneous substrate on which the nitride of FIG. 7 is stacked.

FIG. 14 is a graph illustrating I-V curves of the nitride semiconductor device of FIG. 13.

FIG. 15 is a graph showing L-I curves of the nitride semiconductor device of FIG. 13.

16 is a photograph showing a state in which light is generated by applying power to the nitride-based semiconductor device of FIG. 13.

FIG. 17 is a graph illustrating FWHM values of x-ray rocking curves for respective directions of the nitride semiconductor device of FIG. 13.

Description of the Related Art [0002]

11 base substrate 12 crystal growth nucleus layer

13: first buffer layer 14: horizontal growth layer

15 silicon nitride layer 16 holes

17: first buffer layer 18: a surface nitride layer

10: dissimilar substrate 20: first nitride layer

30: active layer 40: second nitride layer

100: nitride semiconductor element

Claims (18)

A base substrate having either a nonpolar or semipolar surface; A nitride based crystal growth nucleus layer formed on a surface of the base substrate; A first buffer layer grown on the crystal growth nucleus layer and grown faster in the vertical direction than in the horizontal direction; A horizontal growth layer grown on the first buffer layer and growing faster in the horizontal direction than in the vertical direction; A second buffer layer grown on the horizontal growth layer; The heterogeneous substrate is stacked nitride comprising a. The method of claim 1, And at least one silicon nitride (SiN _x ) layer formed at an interface or inside of the first buffer layer, the horizontal growth layer, or the second buffer layer, and having a plurality of holes uniformly formed therein. And a nitride under the silicon nitride layer is grown through the holes of the silicon nitride layer to cover the silicon nitride layer. The method of claim 1, wherein the silicon nitride layer, The nitride substrate is stacked on the first buffer layer, characterized in that formed between the second buffer layer and the horizontal growth layer. The method of claim 3, wherein the base substrate, It is a sapphire substrate, The nitride board | substrate with which nitride was laminated | stacked. The method according to claim 4, wherein the nonpolar or semipolar plane, A hetero substrate on which nitrides are laminated, characterized in that it is one of a surface, r surface or m surface. The method of claim 5, wherein the nitride-based crystal growth nucleus layer, A nitride-laminated dissimilar substrate, characterized in that it is a nitride-based single crystal having apolar or semipolar polarity. The method of claim 6, wherein the nitride-based crystal growth nucleus layer, A nitride-laminated heterogeneous substrate, which is one of GaN, Al _x Ga _1-x N, and In _x Ga _1-y N (0 <x, y <1). The method of claim 7, wherein the nitride-based crystal growth nucleus layer, Nitride-laminated heterogeneous substrate, characterized in that the growth of nitrogen or hydrogen atmosphere of 30 ~ 760 torr, 30 ~ 760 torr, V / III at 50 ~ 3000. The method of claim 8, wherein the first buffer layer, A nitride-laminated heterogeneous substrate, characterized by growing at a ratio of V / III at 50 to 2000, 450 to 1300 ° C, and 100 to 760 torr. The method of claim 9, wherein the horizontal growth layer, The nitride substrate is laminated heterogeneous substrate, characterized in that the ratio of V / III was grown at 2 ~ 1000, 800 ~ 1500 ℃ and 10 ~ 300 torr. The method of claim 10, wherein the second buffer layer,  A nitride-laminated heterogeneous substrate characterized by growing at a ratio of V / III at 50 to 2000, 450 to 1300 ° C, and 30 to 760 torr. The method of claim 11, wherein the nitride-based crystal growth nucleus layer, A heterogeneous substrate on which nitrides are laminated, having a thickness of 5 to 700 nm. Claim 1 to 12, wherein the nitride of any one of the nitride substrate laminated; A first nitride layer of either n type or p type formed on the second buffer layer; An active layer formed on the first nitride layer; A second nitride layer formed on the active layer and opposite to the first nitride layer; A nitride-based semiconductor device comprising a. Preparing a base substrate having either a nonpolar or semipolar surface; A crystal growth nucleus layer forming step of forming a nitride-based crystal growth nucleus layer on a surface of the base substrate; A first buffer layer growing step of growing a first buffer layer on the crystal growth nucleus layer, but growing faster in the vertical direction than in the horizontal direction; A horizontal growth layer growth step of growing a horizontal growth layer on the first buffer layer, but growing faster in the horizontal direction than in the vertical direction; A second buffer layer growth step of growing a second buffer layer on the horizontal growth layer; Method for producing a heterogeneous substrate laminated with nitride comprising a. The method of claim 14, The base substrate is a sapphire substrate, the non-polar or semi-polar surface is a method of manufacturing a nitride-laminated heterogeneous substrate, characterized in that one of a surface, r surface or m surface. The method of claim 14, wherein the horizontal growth layer growth step, Growing the first horizontal growth layer on the first buffer layer; Forming a silicon nitride layer having a plurality of holes on the first horizontal growth layer; Growing the first horizontal growth layer exposed through the holes of the silicon nitride layer to grow a second horizontal growth layer covering the silicon nitride layer; Method for producing a heterogeneous substrate is laminated nitride comprising a. The method of claim 14, wherein the second buffer layer growth step, Growing the 2-1 buffer layer on the silicon nitride layer; Forming a silicon nitride layer having a plurality of holes on the 2-1 buffer layer; Growing a 2-2 buffer layer covering the silicon nitride layer by growing the 2-1 buffer layer exposed through the holes of the silicon nitride layer; Method for producing a heterogeneous substrate is laminated nitride comprising a. The method according to claim 14, which is performed after the horizontal growth layer forming step, A silicon nitride layer forming step of forming a silicon nitride layer having a plurality of holes on the horizontal growth layer; And growing the second buffer layer covering the silicon nitride layer by growing the second buffer layer exposed through the holes of the silicon nitride layer in the second buffer layer growth step.

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