KR20100122277A - Organic light emitting display device and manufacturing method of the same - Google Patents

Abstract

PURPOSE: An organic electroluminescent light-emitting display apparatus and a method for manufacturing the same are provided to prevent the damage of an organic light emitting layer due to plasma generated from a sputtering process by forming an upper electrode with two-kinds of metals. CONSTITUTION: A transistor(S1) is located on a substrate(110). A transparent electrode(118) is in connection with the source(115c) or the drain(115d) of the transistor. A back layer(119) includes an opening part in order to exposing a part of the transparent electrode. A lower electrode in connection with the transparent electrode is composed of two-kinds of metals.

Description

Organic Light Emitting Display Device and Manufacturing Method of the same

Embodiments of the present invention relate to an organic light emitting display device and a method of manufacturing the same.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes positioned on a substrate. The organic light emitting display includes a top emission type, a bottom emission type, or a dual emission type according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

The subpixels disposed in the organic light emitting display device include a transistor unit including a switching transistor, a driving transistor, and a capacitor, and an organic light emitting diode including a lower electrode, an organic light emitting layer, and an upper electrode connected to the driving transistor included in the transistor unit. do. When the scan signal, the data signal, and the power are supplied to the plurality of subpixels arranged in a matrix form, the organic light emitting display device may display an image by emitting light of the selected subpixel.

On the other hand, in the conventional bottom emission method, when the metal oxide is formed as the upper electrode, there is a problem that the organic light emitting layer is damaged due to the plasma generation by sputtering. In addition, the conventional bottom emission method has a problem that the resistance of the electrodes formed in the panel is high, which leads to an increase in driving voltage and luminance unevenness, and thus improvement thereof is required.

Embodiments of the present invention for solving the problems of the above-described background technology, to improve the injection force of the electron and to prevent the organic light emitting layer is damaged due to the plasma generated in the sputtering process when forming the electrode The present invention provides an organic light emitting display device which can configure electrodes of a diode to lower the resistance of electrodes, and solve a problem of driving voltage rise and luminance unevenness.

Embodiments of the present invention by means of the above-described problem solving means, the transistor located on the substrate; A transparent electrode connected to the source or the drain of the transistor; A bank layer having an opening to expose a portion of the transparent electrode; A lower electrode made of different metals in contact with the transparent electrode; An organic light emitting layer on the lower electrode; And an upper electrode formed on the organic light emitting layer and formed of a heterogeneous metal.

The thickness of the upper electrode may be thicker than the thickness of the lower electrode.

The lower electrode may have a thickness of 5 μs to 50 μs.

The upper electrode may have a three-layer structure consisting of metal oxide / metal / metal.

The lower electrode includes a first lower electrode disposed on the transparent electrode and composed of one of the elements belonging to group 11 of the periodic table, and a second lower electrode disposed on the first lower electrode and composed of one of the elements belonging to group 13 of the periodic table. can do.

The upper electrode is disposed on the organic light emitting layer and includes a first upper electrode composed of a metal oxide, a second upper electrode formed on one of the elements belonging to Group 11 of the periodic table, and a second upper electrode formed on the first upper electrode. The third upper electrode may include a third upper electrode positioned at one of the elements belonging to Group 13 of the periodic table.

The lower electrode may be made of silver (Ag) / aluminum (Al) or silver (Ag): aluminum (Al).

In another aspect, an embodiment of the present invention includes forming a transistor on a substrate; Forming a transparent electrode on the insulating film so as to be connected to a source or a drain of the transistor; Forming a bank layer to have an opening exposing a portion of the transparent electrode on the transparent electrode; Forming a lower electrode made of different metals on the transparent electrode so as to contact the transparent electrode; Forming an organic emission layer on the lower electrode; And forming an upper electrode made of different metals on the organic light emitting layer.

The lower electrode may have a thickness of 5 μs to 50 μs.

The upper electrode may have a three-layer structure consisting of metal oxide / metal / metal.

According to the embodiment of the present invention, the electrodes of the organic light emitting diode are configured to improve the injection force of the electrons and to prevent the organic light emitting layer from being damaged by the plasma generated in the sputtering process during electrode formation. It is effective to provide an organic light emitting display device capable of lowering and solving problems of driving voltage and luminance unevenness.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

FIG. 1 is a schematic block diagram of an organic light emitting display device according to an embodiment of the present invention, and FIG. 2 is an exemplary circuit diagram of a subpixel shown in FIG.

1 and 2, an organic light emitting display device according to an embodiment of the present invention includes a panel PNL including sub pixels SP arranged in a matrix form, and scan wirings of the sub pixels SP. A scan driver SDRV for supplying a scan signal to SL1..SLm and a data driver DVR for supplying a data signal to the data wiring DL1..DLn of the subpixel SP.

The subpixel SP has a 2T (Capacitor) structure including a switching transistor S1, a driving transistor T1, a capacitor Cst, and an organic light emitting diode D, or further includes a transistor or a capacitor. It may be configured as a structure.

In the case of the 2T1C structure, elements included in the subpixel SP may be connected as follows. The switching transistor S1 has a gate connected to the scan line SL1 supplied with the scan signal, one end connected to the data line DL1 supplied with the data signal, and the other end connected to the first node A. The driving transistor T1 has a gate connected to the first node A, one end connected to the second node B, and a third node C connected to the second power supply line VSS supplied with a low-voltage power supply. The other end is connected. One end of the capacitor Cst is connected to the first node A, and the other end thereof is connected to the third node C. In the organic light emitting diode D, an anode is connected to the first power line VDD to which power of a high potential is supplied, and a cathode is connected to one end of the second node B and the driving transistor T1.

In the above description, the transistors S1 and T1 included in the sub-pixel SP have been configured as N-types as an example. However, embodiments of the present invention are not limited thereto. The high potential power supplied through the first power line VDD may be higher than the low potential power supplied through the second power line VSS, and the first power line VDD and the second power line ( The level of power supplied through VSS) can be switched according to the driving method.

The subpixel SP described above may operate as follows. When the scan signal is supplied through the scan line SL1, the switching transistor S1 is turned on. Next, when the data signal supplied through the data line DL1 is supplied to the first node A through the switching transistor S1 turned on, the data signal is stored as a data voltage in the capacitor Cst. Next, when the scan signal is blocked and the switching transistor S1 is turned off, the driving transistor T1 is driven in response to the data voltage stored in the capacitor Cst. Next, when the high potential power supplied through the first power line VDD flows through the second power line VSS, the organic light emitting diode D emits light. However, this is only an example of the driving method, the embodiment of the present invention is not limited thereto.

Hereinafter, the embodiment will be described in more detail with reference to a cross-sectional view of the subpixel SP.

3 is a cross-sectional view of a subpixel according to an exemplary embodiment of the present invention, FIG. 4 is a diagram illustrating a part of the subpixel illustrated in FIG. 3 according to the first exemplary embodiment of the present invention, and FIG. FIG. 3 is a diagram illustrating a part of the subpixel illustrated in FIG. 3 according to the second embodiment.

3 to 5, a subpixel SP and pads GP and DP including a switching transistor S1, a driving transistor T1, and an organic light emitting diode D are illustrated. However, for convenience of explanation, the capacitor is omitted.

The gate electrodes 112a and 112b are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a single layer made of any one material selected from or multiple layers made of alloys thereof, but is not limited thereto.

The first insulating layer 113 is formed on the gate electrodes 112a and 112b. The first insulating layer 113 may be a single layer made of any one material of silicon oxide (SiOx) and silicon nitride (SiNx) or multiple layers thereof, but is not limited thereto.

Active layers 114a and 114b are formed on the first insulating layer 113 to correspond to the gate electrodes 112a and 112b, respectively. The active layers 114a and 114b may be formed of amorphous silicon or polycrystalline silicon crystallized therefrom. The active layers 114a and 114b may include a source region, a channel region, and a drain region.

Source electrodes 115a and 115c and drain electrodes 115b and 115d, which contact the active layers 114a and 114b, are formed on the first insulating layer 113, respectively. The source electrodes 115a and 115c and the drain electrodes 115b and 115d may be formed of a single layer or multiple layers. When the source electrodes 115a and 115c and the drain electrodes 115b and 115d have a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), Neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof selected from the group consisting of. In contrast, when the source electrodes 115a and 115c and the drain electrodes 115b and 115d have multiple layers, a double layer of molybdenum / aluminum-neodymium, and a triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum are formed. Can be.

The second insulating layer 116 is formed on the first insulating layer 113 to cover the source electrodes 115a and 115c and the drain electrodes 115b and 115d. The second insulating layer 116 may be formed of the same material as the first insulating layer 113, but is not limited thereto.

The transparent electrode 118 connected to the source electrode 115c or the drain electrode 115d of the driving transistor T1 is formed on the second insulating layer 116, and the drain electrode 115b of the switching transistor S1 and the driving transistor ( The connecting electrode 117a connecting the gate electrode 112b of T1 is formed. The transparent electrode 118 and the connection electrode 117a may be formed of metal oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO), but are not limited thereto.

On the transparent electrode 118, a bank layer 119 having an opening exposing a part of the transparent electrode 118 is formed. The bank layer 119 may include organic materials such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin, but is not limited thereto.

The lower electrode 120 made of different metals is formed on the transparent electrode 118 so as to contact the transparent electrode 118. The transparent electrode 118 and the lower electrode 120 are selected as a cathode. Referring to the first embodiment of FIG. 4, the lower electrode 120 includes one of the elements belonging to Group 11 of the periodic table, for example, the first lower electrode 120a and the first lower electrode 120a formed of silver (Ag). The second lower electrode 120b may be formed of one of the elements belonging to Group 13 of the periodic table, for example, aluminum (Al). That is, the lower electrode 120 may have a multilayer structure made of silver (Ag) / aluminum (Al). Alternatively, referring to the second embodiment of FIG. 5, the lower electrode 120 may have a single layer structure made of silver (Ag): aluminum (Al).

The organic emission layer 123 is formed on the lower electrode 120. The organic emission layer 123 includes an electron injection layer 123a, an electron transport layer 123b, a light emitting layer 123c, a hole transport layer 123d, and a hole injection layer 123e. The electron injection layer 123a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), LiF, PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto. . The electron transport layer 123b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto. The emission layer 123c may include a material emitting red, green, blue, and white light and may be formed using phosphorescent or fluorescent materials. When the light emitting layer 123c emits red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Alternatively, the phosphor may be formed of a phosphor including PBD: Eu (DBM) 3 (Phen) or Perylene, but is not limited thereto.When the light emitting layer 123c emits green, CBP or mCP may be used. It may include a host material including a dopant material including a dopant material, including a host material, including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, Alq3 (tris (8-hydroxyquinolino) aluminum) fluorescent material When the light emitting layer 123c emits blue, the light emitting layer 123c may include a host material including CBP or mCP and may be formed of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be composed of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, The hole transport layer 123d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), and TPD (N, N'-bis- (3). -methylphenyl) -N, N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more selected from the group consisting of, but is not limited thereto. The hole injection layer 123e may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of one or more selected from the group consisting of, but is not limited thereto. Here, the embodiment is not limited to FIG. 4, and at least one of the electron injection layer 123a, the electron transport layer 123b, the hole transport layer 123d, and the hole injection layer 123e may be omitted.

The upper electrode 127 is formed on the organic emission layer 123. The upper electrode 127 is selected as the anode. The upper electrode 127 may be made of different metals. The upper electrode 127 may have a three-layer structure made of metal oxide / metal / metal 127c. In more detail, the upper electrode 127 is formed of a metal oxide, for example, a first upper electrode 127a formed of IZO, and one of the elements located on the first upper electrode 127a and belonging to Group 11 of the periodic table. The second upper electrode 127b made of silver (Ag) and the third upper electrode 127c made of aluminum (Al), for example, one of the elements belonging to Group 13 of the periodic table located on the second upper electrode 127b. It may include. The second upper electrode 127b constituting the upper electrode 127 may be omitted depending on the structure.

In the sub-pixel SP described above, the thickness of the lower electrode 120 is formed to be thinner than the thickness of the upper electrode 127. The lower electrode 120 may have a thickness of about 5 μs to about 50 μs. As shown in the first embodiment of FIG. 4, when the lower electrode 120 is formed in a multilayer structure, the first lower electrode 120a may have an adhesive force between the transparent electrode 118 and the second lower electrode 120b. It also improves and acts as a buffer material. For this reason, when the thickness of the lower electrode 120 is 5 Å or more, the adhesion between the transparent electrode 118 and the second lower electrode 120b may be improved and a role as a buffer material may be performed. When the thickness of the lower electrode 120 is 50 Å or less, electrons can be easily injected in the vertical direction while maintaining the permeability of the electrode, thereby preventing the problem of unwanted current flowing in the horizontal direction. However, the first lower electrode 120a may be formed thicker than the thickness of the second lower electrode 120b in order to improve adhesion between the transparent electrode 118 and the second lower electrode 120b. As shown in the second embodiment of FIG. 5, even when the lower electrode 120 is formed in a single layer structure, when the thickness of the lower electrode 120 is 5 kPa to 50 kPa, the adhesion is improved and the electrode transmittance is maintained. While the electrons can be easily injected in the vertical direction, it is possible to prevent the problem that the current flows undesirably in the horizontal direction.

Hereinafter, a manufacturing method according to an embodiment of the present invention will be described.

6 to 11 are cross-sectional views of sub-pixels for explaining a method of manufacturing an organic light emitting display device according to an embodiment of the present invention, and FIG. 12 is a cross-sectional view of a pad formed on a substrate.

As shown in FIG. 6, the transistors S1 and T1 are formed on the substrate 110. The switching transistor S1, the driving transistor T1, and a capacitor (not shown) are formed on the substrate 110.

Gate electrodes 112a and 112b are formed on the substrate 110, respectively. The gate electrodes 112a and 112b may be formed using photoresist and wet etch, but are not limited thereto. The gate electrodes 112a and 112b are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a single layer made of any one material selected from or multiple layers made of alloys thereof, but is not limited thereto.

The first insulating layer 113 is formed on the gate electrodes 112a and 112b. The first insulating layer 113 may be formed using a photoresist and dry etch, but is not limited thereto. The first insulating layer 113 may be a single layer made of any one material of silicon oxide (SiOx) and silicon nitride (SiNx) or multiple layers thereof, but is not limited thereto.

Active layers 114a and 114b are formed on the first insulating layer 113 to correspond to the gate electrodes 112a and 112b, respectively. The active layers 114a and 114b may be formed of amorphous silicon or polycrystalline silicon crystallized therefrom. The active layers 114a and 114b may include a source region, a channel region, and a drain region.

Source electrodes 115a and 115c and drain electrodes 115b and 115d, which contact the active layers 114a and 114b, are formed on the first insulating layer 113, respectively. The source electrodes 115a and 115c and the drain electrodes 115b and 115d may be formed using photoresist and wet etching, but are not limited thereto. The source electrodes 115a and 115c and the drain electrodes 115b and 115d may be formed of a single layer or multiple layers. When the source electrodes 115a and 115c and the drain electrodes 115b and 115d have a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), Neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof selected from the group consisting of. In contrast, when the source electrodes 115a and 115c and the drain electrodes 115b and 115d have multiple layers, a double layer of molybdenum / aluminum-neodymium, and a triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum are formed. Can be.

The second insulating layer 116 is formed on the first insulating layer 113 to cover the source electrodes 115a and 115c and the drain electrodes 115b and 115d. The second insulating layer 116 may be formed using photoresist and dry etching, but is not limited thereto. The second insulating layer 116 may be formed of the same material as the first insulating layer 113, but is not limited thereto.

As shown in FIG. 7, the transparent electrode 118 is formed on the second insulating layer 116 so as to be connected to the source 115c or the drain 115d of the driving transistor T1.

The transparent electrode 118 connected to the source 115c or the drain 115d of the driving transistor T1 is formed on the second insulating layer 116. At the same time, a connection electrode 117a connecting the source 115a or the drain 115b of the switching transistor S1 and the gate electrode 112b of the driving transistor T1 is formed. The transparent electrode 118 and the connection electrode 117a may be formed using a photoresist and wet etching, but are not limited thereto. The transparent electrode 118 and the connection electrode 117a may be formed of metal oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO), but are not limited thereto.

As shown in FIG. 8, the bank layer 119 is formed on the transparent electrode 118 to have an opening OPN exposing a portion of the transparent electrode 118.

On the transparent electrode 118, a bank layer 119 having an opening exposing a part of the transparent electrode 118 is formed. The bank layer 119 may be formed using photoresist and dry etching, but is not limited thereto. The bank layer 119 may include organic materials such as benzocyclobutene (BCB) -based resin, acrylic resin, or polyimide resin, but is not limited thereto.

As shown in FIG. 9, a step of forming a lower electrode 120 made of different metals on the transparent electrode 118 to contact the transparent electrode 118 is performed.

The lower electrode 120 made of different metals is formed on the transparent electrode 118 so as to contact the transparent electrode 118. The lower electrode 120 is selected as a cathode. Referring to the first embodiment of FIG. 4, the lower electrode 120 includes one of the elements belonging to Group 11 of the periodic table, for example, the first lower electrode 120a and the first lower electrode 120a formed of silver (Ag). The second lower electrode 120b may be formed of one of the elements belonging to Group 13 of the periodic table, for example, aluminum (Al). That is, the lower electrode 120 may have a multilayer structure made of silver (Ag) / aluminum (Al). In this case, the first lower electrode 120a and the second lower electrode 120b may be formed using thermal evaporation, but are not limited thereto.

Alternatively, as shown in the second embodiment of FIG. 5, the lower electrode 120 may have a single layer structure made of silver (Ag): aluminum (Al). In this case, the lower electrode 120 may be formed using a Facing Target Sputtering method, but is not limited thereto.

On the other hand, when forming the lower electrode 120, the thickness of the lower electrode 120 is formed in the range of 5 ~ 50Å. As shown in the first embodiment of FIG. 4, when the lower electrode 120 is formed in a multilayer structure, the first lower electrode 120a may have an adhesive force between the transparent electrode 118 and the second lower electrode 120b. It also improves and acts as a buffer material. For this reason, when the thickness of the lower electrode 120 is 5 Å or more, the adhesion between the transparent electrode 118 and the second lower electrode 120b may be improved and a role as a buffer material may be performed. When the thickness of the lower electrode 120 is 50 Å or less, electrons can be easily injected in the vertical direction while maintaining the permeability of the electrode, thereby preventing the problem of unwanted current flowing in the horizontal direction. However, the first lower electrode 120a may be formed thicker than the thickness of the second lower electrode 120b in order to improve adhesion between the transparent electrode 118 and the second lower electrode 120b. As shown in the second embodiment of FIG. 5, even when the lower electrode 120 is formed in a single layer structure, when the thickness of the lower electrode 120 is 5 kPa to 50 kPa, the adhesion is improved and the electrode transmittance is maintained. While the electrons can be easily injected in the vertical direction, it is possible to prevent the problem that the current flows undesirably in the horizontal direction. In addition, the lower electrode 120 may be formed on the transparent electrode 118 without using a special mask only when the thickness of the first lower electrode 120a and the second lower electrode 120b is 50 Å or less.

As shown in FIG. 10, an organic light emitting layer 123 is formed on the lower electrode 120.

The organic emission layer 123 is formed on the lower electrode 120. The organic emission layer 123 includes an electron injection layer 123a, an electron transport layer 123b, a light emitting layer 123c, a hole transport layer 123d, and a hole injection layer 123e. However, this is only an example of an embodiment, and at least one of the electron injection layer 123a, the electron transport layer 123b, the hole transport layer 123d, and the hole injection layer 123e may be omitted.

As shown in FIG. 11, an upper electrode 127 made of different types of metals is formed on the organic light emitting layer 123. In this step, the organic light emitting diode D is formed on the substrate 110 on which the transistors S1 and T1 are formed.

The upper electrode 127 is formed on the organic emission layer 123. The upper electrode 127 is selected as the anode. The upper electrode 127 may be made of different metals. The upper electrode 127 may have a three-layer structure including the first upper electrode 127a, the second upper electrode 127b, and the third upper electrode 127c. The first upper electrode 127a may be formed of a metal oxide, for example, IZO. The second upper electrode 127b is disposed on the first upper electrode 127a and may be formed of one of elements belonging to Group 11 of the periodic table, for example, silver (Ag). The third upper electrode 127c is disposed on the second upper electrode 127b and may be formed of one of elements belonging to Group 13 of the periodic table, for example, aluminum (Al). That is, the upper electrode 127 may have a three-layer structure composed of IZO / Ag / Al. Meanwhile, materials constituting the second upper electrode 127b and the third upper electrode 127c may be interchanged with each other, and at least one of the second upper electrode 127b and the third upper electrode 127c may be an alloy thereof. It may be configured as. That is, the upper electrode 127 may have a three-layer structure composed of IZO / Ag-Al / Ag.

When the upper electrode 127 is formed, when the metal oxide selected as the first upper electrode 127a is formed, an opposite target sputtering method is used, but the deposition is performed at a low deposition rate (rate) at a level of several tens to 100 Å. In the conventional method, the upper electrode is composed of a single layer. Accordingly, the conventional method had to deposit up to 2000 Pa when forming a metal oxide on the organic light emitting layer due to its structural characteristics. On the other hand, in the embodiment, the upper electrode 127 is composed of multiple layers. Accordingly, since the embodiment does not exceed a level of 100 μs at the time of forming the metal oxide on the organic light emitting layer due to its structural characteristics, the deposition time is relatively short and the problem that the organic light emitting layer is damaged by the plasma during the deposition can be prevented. When the metal selected as the second upper electrode 127b and the third upper electrode 127c is formed, it is deposited by thermal evaporation. However, since the second upper electrode 127b improves the adhesion between the first upper electrode 127a and the third upper electrode 127c and serves as a reflective film and a buffer material, the third upper electrode 127c may be used. More relatively thin, eg, from tens to hundreds of microns. In addition, since the third upper electrode 127c serves as a resistance reduction and a reflective film, the third upper electrode 127c is formed relatively thicker than the second upper electrode 127b, for example, from several hundreds to thousands of microwatts. On the other hand, the second upper electrode 127b constituting the upper electrode 127 may be omitted depending on the structure.

Referring to FIG. 12, pads GP and DP are formed outside the substrate 110 at the same time a subpixel is formed and a panel is manufactured. The pad GP is formed by the same process as the gate pad GP, the active layers 114a and 114b, and the source and drain electrodes 115a, 115c, 115b, and 115d formed by the same process as the gate electrodes 112a and 112b. It includes a formed data pad (DP). In the exemplary embodiment, the top electrode is formed of metal oxide by leaving the transparent electrode patterns 117b and 117c on the pads GP and DP in the same process as the transparent electrode 118 and the connection electrode 117a.

In the embodiment, the organic light emitting display device is manufactured in a bottom-emission manner by the structure of the electrodes constituting the organic light emitting diode (D). Accordingly, the substrate 110 is made of a material having good transmittance. The material of the substrate 110 may be, for example, glass, metal, ceramic, or plastic, but is not limited thereto. Although not shown, elements formed on the substrate 110 are protected by a protection member because they are vulnerable to moisture or oxygen.

Embodiment of the present invention is to improve the injection force of the electrons and to configure the electrodes of the organic light emitting diode to prevent the problem of damage to the organic light emitting layer due to the plasma generated in the sputtering process when forming the electrode to improve the resistance of the electrodes It is effective to provide an organic light emitting display device capable of lowering and solving problems of driving voltage rise and luminance unevenness.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is represented by the claims to be described later rather than the detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a schematic block diagram of an organic light emitting display device according to an embodiment of the present invention;

FIG. 2 is an exemplary circuit diagram of a subpixel illustrated in FIG. 1. FIG.

3 is a cross-sectional view of a subpixel according to an embodiment of the present invention.

4 is a configuration diagram illustrating a part of the subpixel illustrated in FIG. 3 according to the first embodiment of the present invention.

FIG. 5 is a diagram illustrating a part of the subpixels shown in FIG. 3 according to the second embodiment of the present invention; FIG.

6 to 11 are cross-sectional views of sub-pixels for explaining a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

12 is a sectional view of a pad formed on the substrate.

<Explanation of symbols on main parts of the drawings>

110: substrate 113: first insulating film

116: second insulating film 118: transparent electrode

120: lower electrode 123: organic light emitting layer

127: upper electrode S1: switching transistor

T1: driving transistor D: organic light emitting diode

Claims (10)

A transistor located on the substrate; A transparent electrode connected to a source or a drain of the transistor; A bank layer having an opening to expose a portion of the transparent electrode; A lower electrode in contact with the transparent electrode and made of different metals; An organic light emitting layer on the lower electrode; And An organic light emitting display device on the organic light emitting layer, the organic light emitting display device comprising an upper electrode made of different metals. The method of claim 1, The thickness of the upper electrode, An organic light emitting display device, characterized in that thicker than the thickness of the lower electrode. The method of claim 1, The lower electrode has a thickness of 5 ~ 50 Å organic light emitting display device. The method of claim 1, The upper electrode, An organic light emitting display device having a three-layer structure consisting of a metal oxide / metal / metal. The method of claim 1, The lower electrode, A first lower electrode disposed on the transparent electrode and composed of one of elements belonging to Group 11 of the periodic table; And a second lower electrode disposed on the first lower electrode and formed of one of elements belonging to group 13 of the periodic table. The method of claim 1, The upper electrode, A first upper electrode on the organic light emitting layer and composed of a metal oxide; A second upper electrode disposed on the first upper electrode and formed of one of elements belonging to Group 11 of the periodic table; And a third upper electrode disposed on the second upper electrode and formed of one of elements belonging to Group 13 of the periodic table. The method of claim 1, The lower electrode, An organic light emitting display device comprising silver (Ag) / aluminum (Al) or silver (Ag): aluminum (Al). Forming a transistor on the substrate; Forming a transparent electrode on the insulating layer to be connected to a source or a drain of the transistor; Forming a bank layer on the transparent electrode to have an opening exposing a portion of the transparent electrode; Forming a lower electrode made of different metals on the transparent electrode to contact the transparent electrode; Forming an organic emission layer on the lower electrode; And A method of manufacturing an organic light emitting display device, the method comprising: forming an upper electrode made of different metals on the organic light emitting layer. The method of claim 8, The lower electrode has a thickness of 5 kPa to 50 kPa. The method of claim 8, The upper electrode, A method of manufacturing an organic light emitting display device, characterized in that the three-layer structure consisting of metal oxide / metal / metal.

Images