KR20100106806A - Composite of nanowire and nanodot, and optical device having the composite - Google Patents

Abstract

PURPOSE: A nanowire/nanodot composite and an optical device including thereof are provided to improve the optical efficiency of the optical device by forming nanodots with a large surface area using luminescent materials. CONSTITUTION: A nanowire/nanodot composite contains the following: a nanowire(110) including a conductive material; and multiple nanodots(150) including luminescent materials, formed on the surface of the nanowire. The nanowire is doped to a p-type or n-type. An optical device includes multiple nanowires including the conductive material, the nanodots, and multiple shells covering the nanowires to surround the nanodots.

Description

Composite of nanowires and nanodots and optical device having the same {Composite of nanowire and nanodot, and optical device having the composite}

Provided are a composite of nanowires and nanodots and an optical device having the same.

Until now, the silicon material, which has received much attention as an electronic device material, has a low luminous efficiency in the bulk state, and thus has limited use in the field of display devices and optoelectronic devices. For this reason, non-silicon based compound semiconductors or oxide semiconductors are used in the field of optical devices such as display devices, laser devices, light emitting devices, light receiving devices, and the like. However, such compound semiconductors or oxide semiconductors have very high luminous efficiency, but are more expensive in terms of materials and processes than silicon materials, and it is difficult to form high quality compound semiconductor thin films or oxide semiconductor thin films on substrates. It is difficult to integrate.

Nanooptic devices fabricated using semiconductor materials having nanostructures such as quantum wells, quantum dots, and nanowires have higher light conversion efficiency than optical devices having thin film structures. In particular, a nano-optical device having a nanowire structure or a core-shell structure has an advantage of controlling wavelength and light efficiency of emitted light. Accordingly, optical device fabrication using optical properties of nanostructured semiconductor materials has been actively attempted. On the other hand, by using the quantum confinement effect that appears as the diameter of the nanowires or nanodots decreases or when nanowires made of semiconductor materials having different energy bandgap are used in the optical device, the wavelength of light emitted from the optical device Can be controlled more effectively, and higher light efficiency can be obtained. In addition, when a heterostructure, for example, a core-shell structured nano-optical device is manufactured using different semiconductor materials, it is possible to more effectively control the wavelength of light emitted from the optical device.

According to an embodiment of the present invention, there is provided a composite of nanowires and nanodots and a light emitting device having the same.

In one aspect of the invention,

Nanowires comprising a conductive material; And

Formed on the surface of the nanowire, a composite of nanowires and nanodots comprising a plurality of nanodots (nano dots) including a light emitting material is disclosed.

The nanowires and nanodots may be composed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor.

The nanowires may be doped with p-type or n-type.

In another aspect of the invention,

Preparing a template in which a channel having a diameter of a nanometer is formed;

Implanting a plurality of nanodots comprising a luminescent material in the channel;

Chemically surface treating the inner wall of the channel to attach the nanodots to the inner wall of the channel; And

Disclosed is a method of manufacturing a composite of nanowires and nanodots, comprising: forming the nanodots on the surface of the nanowires by growing nanowires in the channel.

After preparing the template on which the channel is formed, the method may further include injecting a catalyst metal for growth of nanowires into the channel.

The nanowires may be grown by chemical vapor deposition (CVD).

In another aspect of the invention,

Providing a template formed through a channel having a diameter of a nano size on the substrate;

Implanting a plurality of nanodots comprising a luminescent material in the channel;

Chemically surface treating the inner wall of the channel to attach the nanodots to the inner wall of the channel; And

Disclosed is a method for manufacturing a composite of nanowires and nanodots, comprising: forming the nanodots on a surface of the nanowires by growing nanowires from a substrate in the channel.

The substrate may be a conductive substrate.

In another aspect of the invention,

A plurality of nanowires comprising a conductive material;

A plurality of nano dots formed on a surface of each of the nanowires and including a light emitting material; And

An optical device including a plurality of shells including a conductive material is provided to surround each of the nanowires to cover the nanodots.

The optical device may further include a first electrode electrically connected to the nanowires and a second electrode electrically connected to the shells.

The nanodots and nanowires may be made of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. The shell may be made of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, a nitride semiconductor, or a conductive polymer.

The nanowires may be doped with p-type and the shell may be doped with n-type. In addition, the nanowires may be doped with n-type, and the shell may be doped with p-type.

In another aspect of the invention,

A plurality of nanowires comprising a conductive material;

A plurality of nano dots formed on a surface of each of the nanowires and including a light emitting material; And

An optical device having a shell matrix including a conductive material is provided to surround the nanowires to cover the nanodots.

According to the exemplary embodiment of the present invention, the light emitting material is formed on the surface of the nanowire 110 made of a conductive semiconductor material, and the nanodots 150 having a large surface area are formed to implement a high-performance optical device having improved light efficiency. .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings refer to like elements, and the size or thickness of each element may be exaggerated for clarity.

1 is a perspective view illustrating a composite of nanowires and nanodots according to an embodiment of the present invention.

Referring to FIG. 1, the composite according to the present embodiment includes a nanowire 110 and a plurality of nanodots 150 formed on a surface of the nanowire 110. Here, the nanowires 110 may include a conductive semiconductor material. Specifically, the nanowires 110 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. The group IV semiconductor may include, for example, Si, Ge, or SiC, and the group III-V compound semiconductor may include, for example, GaN, GaAs, AsP, or the like. The group compound semiconductor may include, for example, CdSe, Cds, ZnS, or the like. In addition, the oxide semiconductor may include, for example, ZnO, and the nitride semiconductor may include, for example, silicon nitride or germanium nitride. However, the present embodiment is not limited thereto. Meanwhile, the nanowires 110 may be applied to an optical device as described below by being doped with p-type or n-type.

The nanodots 150 formed on the surface of the nanowire 110 may be made of a light emitting material. Specifically, the nanodots 150 may be made of a light emitting semiconductor material that emits light by an electrical signal or receives light to generate an electrical signal. The nanodots 150 may be made of the same material as the material forming the nanowires 110. Accordingly, the nano-dots 150 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor.

As in this embodiment, by forming a light emitting material on the surface of the nanowire 110 made of a conductive semiconductor material, a large surface area nano dots 150 can be implemented a high-performance optical device with improved light efficiency.

2 to 5 are views for explaining a method of manufacturing a composite of nanowires and nanodots according to an embodiment of the present invention.

Referring to FIG. 2, a template (400) on which channels (401) having a predetermined depth are formed is prepared. Here, the channels 401 may have a nano size diameter. In addition, catalyst metals 405 are injected into the channels 401. Wherein the catalyst metals 405 is to promote the growth of the nanowires (410 of FIG. 4) to be described later.

Referring to FIG. 3, a plurality of nano dots 450 are injected into each of the channels 401. Here, the nanodots 450 may include a light emitting semiconductor material. Specifically, the nanodots 450 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. Subsequently, when the inner walls of the channels 401 are chemically surface treated, the nano dots 450 may be attached to the inner walls of each of the channels 401.

Referring to FIG. 4, nanowires 410 are grown in the channels 401 using chemical vapor deposition. During the growth of the nanowires 410, the nanodots 450 attached to the inner wall of the channel 401 are attached to the surface of the nanowires 410 by a vapor-liquid-solid (VLS) mechanism. The nanowires 410 may include a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. Meanwhile, the nanowires 410 may be doped with p-type or n-type by injecting a predetermined doping material into the channels 401 during the growth of the nanowires 410.

Finally, when the template 400 is removed, composites in which nanodots 450 made of light emitting materials are formed on surfaces of the nanowires 410 may be obtained as shown in FIG. 5. In FIG. 5, the illustration of the catalyst metal 405 is omitted for convenience.

6 to 9 are diagrams for explaining a method of manufacturing a composite of nanowires and nanodots according to an embodiment of the present invention.

Referring to FIG. 6, after preparing the substrate 502, a template 500 formed by passing channels 501 through the substrate 502 is prepared. Here, the channels 501 may have a diameter of a nano size. A conductive substrate may be used as the substrate 502. Next, catalyst metals 505 are injected into the channels 501.

Referring to FIG. 7, a plurality of nano dots 550 are injected into each of the channels 501. Here, the nanodots 550 include a light emitting material. Specifically, the nanodots 550 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. Subsequently, when the inner wall of the channels 501 is chemically surface treated, the nano dots 550 are attached to the inner walls of each of the channels 501.

Referring to FIG. 8, nanowires 510 are grown on a substrate 502 in the channels 501 using chemical vapor deposition (CVD). During the growth of the nanowires 510, nanodots 550 attached to the inner wall of the channel 501 are attached to the surface of the nanowires 510. The nanowires 510 may include a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. Meanwhile, the nanowires 510 may be doped with p-type or n-type by injecting a predetermined doping material into the channels 501 during the growth of the nanowires 510.

And finally, when the template 500 is removed, as shown in FIG. 9, composites having nanodots 550 made of a light emitting material formed on surfaces of the nanowires 510 are formed on the substrate 502. Can be prepared. In the case where a conductive substrate is used as the substrate 502, the substrate 502 may be formed of a first electrode (211 of FIG. 10) electrically connected to the nanowires 210 of FIG. 10 in an optical device to be described later. Can play a role. In FIG. 9, the illustration of the catalyst metal is omitted for convenience.

Meanwhile, the composite of nanowires and nanodots according to an embodiment of the present invention may be prepared by other methods in addition to the above-described method. For example, by chemically treating the surface of the nanowire and the surface of the nanodots, and then combining the chemically treated nanowire with the nanodots, a composite in which nanodots are formed on the surface of the nanowire can be obtained. In addition, nanowires and nanodots may be formed on the surface of the nanowires by using a deposition apparatus such as a sputter, evaporator or metal organic chemical vapor deposition (MOCVD), or by directly forming the nanodots to a desired density by using a chemical method. Composites may also be prepared.

The composite of the nanowires and the nanodots described above may be applied to various optical devices having high performance. Such an optical device may include a light emitting device such as an image sensor as well as a light emitting device such as a display device and a light emitting diode.

10 and 11 are a perspective view and a cross-sectional view showing an optical device according to another embodiment of the present invention.

10 and 11, the optical device according to the present embodiment includes a plurality of nanowires 210, a plurality of nanodots 250 formed on a surface of each of the nanowires 210, and the nanodots. And a plurality of shells 220 surrounding each of the nanowires 210 to cover the fields 250. The nanowires 210 may include a conductive semiconductor material. Specifically, the nanowires 210 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. The group IV semiconductor may include, for example, Si, Ge, or SiC, and the group III-V compound semiconductor may include, for example, GaN, GaAs, AsP, or the like. The group compound semiconductor may include, for example, CdSe, Cds, ZnS, or the like. In addition, the oxide semiconductor may include, for example, ZnO, and the nitride semiconductor may include, for example, silicon nitride or germanium nitride. However, the present embodiment is not limited thereto. In addition, the nanowires 210 may be doped with a p-type or n-type.

The nanodots 250 are made of a light emitting semiconductor material that emits light by an electrical signal or receives light to generate an electrical signal. Like the nanowires 210, the nanodots 250 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor.

The shell 220 may include a conductive material, like nanowires. The shell may be made of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. The shell 220 may be made of a conductive polymer such as PEDOT (poly (3,4-ethylenedioxythiophene)). Meanwhile, when the nanowire 210 is doped with p-type, the shell 220 may be doped with n-type, and when the nanowire 210 is doped with n-type, the shell 220 may be doped. Can be doped with p type.

One ends of the nanowires 210 are exposed to the outside and connected to the first electrode 211. Here, when the nanowires 210 are doped with a p-type, the first electrode 211 becomes a p-type electrode, and when the nanowires 210 are doped with an n-type, the first electrode is Reference numeral 211 is an n-type electrode. One ends of the shells 220 are connected to the second electrode 221. Here, when the shells 220 are doped with p-type, the second electrode 221 becomes a p-type electrode, and when the shells 220 are doped with an n-type, the second electrode 221 is It becomes an n-type electrode.

When the optical device described above is a light emitting device, when a current is applied to the first electrode 211 and the second electrode 221, electrons and holes are formed through the nanowires 210 and the shells 220. The light is emitted from the nanodots 250 by moving and bonding in the nanodots 250. On the other hand, when the optical device described above is a light receiving device, the nano-dots 250 receives light to generate an electrical signal through the first and second electrodes 211 and 221.

12 and 13 are a perspective view and a cross-sectional view showing an optical device according to another embodiment of the present invention. Hereinafter, a description will be given focusing on differences from the above-described embodiment.

12 and 13, the optical device according to the present embodiment includes a plurality of nanowires 310, a plurality of nanodots 350 formed on surfaces of each of the nanowires 310, and the nanodots. And a shell matrix 320 surrounding the nanowires 310 to cover the fields 350. Since the nanowires 310 and the nanodots 350 have been described above, a detailed description thereof will be omitted.

The shell matrix 320 is integrally formed to cover the nanodots 350 formed on the surface of the nanowires 310. The cell matrix 320 may include a conductive semiconductor material. Specifically, the shell matrix 320 may be formed of a group IV semiconductor, a group III-V compound semiconductor, a group II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. In addition, the shell matrix 320 may be made of a conductive polymer such as poly (3,4-ethylenedioxythiophene) (PEDOT). When the nanowires 310 are doped with p-type, the shell matrix 320 may be doped with n-type, and when the nanowires 310 are doped with n-type, the shell matrix 320 may be doped. May be doped to p-type.

One ends of the nanowires 310 are exposed to the outside and connected to the first electrode 311. Here, when the nanowires 310 are doped with p-type, the first electrode 311 becomes a p-type electrode, and when the nanowires 310 are doped with an n-type, the first electrode is 311 becomes an n-type electrode. One end of the shell matrix 320 is connected to the second electrode 321. Here, when the shell matrix 320 is doped with p-type, the second electrode 321 becomes a p-type electrode, and when the shell matrix 320 is doped with n-type, the second electrode 321 ) Becomes an n-type electrode.

As described above, according to the present embodiments, a high-performance optical device having improved luminous efficiency may be realized by forming nanodots made of a light emitting material and having a large surface area on a surface of a nanowire made of a conductive semiconductor.

Although embodiments of the present invention have been described above, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

1 is a perspective view illustrating a composite of nanowires and nanodots according to an embodiment of the present invention.

2 to 5 are views for explaining a method of manufacturing a composite of nanowires and nanodots according to an embodiment of the present invention.

6 to 9 are views for explaining another method of manufacturing a composite of nanowires and nanodots according to an embodiment of the present invention.

10 and 11 illustrate an optical device according to another embodiment of the present invention.

12 and 13 illustrate an optical device according to still another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

 110,210,310,410,510 ... Nanowire

 150,250,350,450,550 ... Nano Dot

 211,311 ... first electrode 220 ... shell

 221,321 ... Second electrode 320 ... Shell matrix

 400,500 .. Template, 410,501 ... Channel

 405,505 ... catalytic metal 502 ... substrate

Claims (21)

Nanowires comprising a conductive material; And Formed on the surface of the nanowire, a plurality of nano dots (nano dots) including a light emitting material; comprising a nanowire and a nanodot. The method of claim 1, The nanowires and nanodots are a composite of nanowires and nanodots consisting of a group IV semiconductor, a III-V compound semiconductor, a II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. The method of claim 1, The nanowires are a composite of nanowires and nanodots doped with p-type or n-type. Preparing a template in which a channel having a diameter of a nanometer is formed; Implanting a plurality of nanodots comprising a luminescent material in the channel; Chemically surface treating the inner wall of the channel to attach the nanodots to the inner wall of the channel; And And growing the nanowires in the channel to form the nanodots on the surface of the nanowires. The method of claim 4, wherein After preparing the template on which the channel is formed, the method of manufacturing a composite of nanowires and nanodots further comprising the step of injecting a catalyst metal for the growth of nanowires in the channel. The method of claim 4, wherein The nanodots and nanowires are a method of manufacturing a composite of nanowires and nanodots consisting of a group IV semiconductor, a III-V compound semiconductor, a II-VI compound semiconductor, an oxide semiconductor or a nitride semiconductor. The method of claim 4, wherein The nanowire is a method of manufacturing a composite of nanowires and nanodots doped with p-type or n-type. The method of claim 4, wherein The nanowires are grown by chemical vapor deposition (CVD; chemical vapor deposition) method of manufacturing a composite of nanowires and nanodots. Providing a template formed through a channel having a diameter of a nano size on the substrate; Implanting a plurality of nanodots comprising a luminescent material in the channel; Chemically surface treating the inner wall of the channel to attach the nanodots to the inner wall of the channel; And Forming nanodots on the surface of the nanowires by growing nanowires from the substrate in the channel; and manufacturing nanocomposites and nanodots. The method of claim 9, The substrate is a method of manufacturing a composite of nanowires and nano dots is a conductive substrate. The method of claim 9, And preparing a template on which the channel is formed on the substrate, and then injecting a catalyst metal for growth of the nanowire into the channel. The method of claim 9, The nanodots and nanowires are a method of manufacturing a composite of nanowires and nanodots consisting of a group IV semiconductor, a III-V compound semiconductor, a II-VI compound semiconductor, an oxide semiconductor or a nitride semiconductor. The method of claim 9, The nanowire is a method of manufacturing a composite of nanowires and nanodots doped with p-type or n-type. A plurality of nanowires comprising a conductive material; A plurality of nano dots formed on a surface of each of the nanowires and including a light emitting material; And And a plurality of shells surrounding each of the nanowires to cover the nanodots, the shell including a conductive material. The method of claim 14, And a second electrode electrically connected to the nanowires and a second electrode electrically connected to the shells. The method of claim 14, The nanodots and the nanowires are composed of a group IV semiconductor, a III-V compound semiconductor, a II-VI compound semiconductor, an oxide semiconductor, or a nitride semiconductor. The method of claim 16, The shell is an optical device consisting of a group IV semiconductor, a III-V compound semiconductor, a II-VI compound semiconductor, an oxide semiconductor, a nitride semiconductor or a conductive polymer. The method of claim 14, The nanowires are doped in a p-type, the shell is an n-type doped optical device. The method of claim 14, The nanowires are doped in n-type, the shell is doped in p-type. A plurality of nanowires comprising a conductive material; A plurality of nano dots formed on a surface of each of the nanowires and including a light emitting material; And An optical device comprising: a shell matrix surrounding the nanowires to cover the nanodots, the shell matrix including a conductive material. The method of claim 20, And a second electrode electrically connected to the nanowires and a second electrode electrically connected to the shell matrix.

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