KR20100083046A - Subtrate supporting member and appratus for treatmenting substrate including the same - Google Patents

Abstract

PURPOSE: A substrate supporting unit and a substrate processing device are provided to prevent a susceptor from being separated from a rotation path by installing a matching unit including an insertion unit on the lower side of the susceptor. CONSTITUTION: A disc(130) comprises a plurality of insertion areas. A heater(120) is positioned on the lower side of the disc. A plurality of susceptors is installed in a plurality of insertion areas. An exhausting unit(126) exhausts the process gas inside a chamber(114). A gas supply device supplies driving gas to apply a driving force to a driving force transmitting unit. A substrate settling unit(118) aligns the susceptor in the insertion area.

Description

Substrate supporting member and Appratus for treatmenting substrate including the same}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate setter means and a substrate processing apparatus including the same and the rotation and rotation of the substrate at the same time.

In general, chemical vapor deposition (CVD) is used as a main method for depositing a thin film on a substrate. Compared with other thin film deposition methods, the CVD method has a good quality of thin film, but has a disadvantage of slow growth rate. To compensate for this, the film deposition process is carried out by placing several substrates at the same time on one substrate settling means. . However, in the case of carrying out the film forming process with several substrates placed in one substrate placing means, various methods have been adopted in order to ensure the same quality for the thin films deposited on each substrate.

1 is a plan view of a substrate mounting means according to the prior art. In the substrate treating apparatus (not shown) according to the related art, a substrate placing means 12 is provided in which a plurality of substrates 10 are placed inside a process chamber (not shown) that provides a reaction space. The substrate mounting means 12 is rotated in the first direction by a support (not shown) connected to the lower portion and a driving device (not shown) for driving the support. A plurality of first teeth are formed on the inner circumference of the substrate placing means 12, and a plurality of planetary gears 14 having a plurality of second teeth are rotated in a second direction along the inner circumference of the substrate placing means 12. Is formed. A plurality of susceptors 16 are respectively provided on the plurality of planetary gears 14, and a plurality of substrates 10 are mounted on each susceptor 16. A gas supply device (not shown) for supplying a process gas to the reaction space of the process chamber is installed.

When the substrate mounting means 12 is rotated by the driving device, the substrate mounting means 12 revolves in the first direction, and at the same time, the plurality of planetary gears 14 are formed along the inner circumference of the substrate mounting means 12. The motor rotates in the second direction opposite to the one direction. Accordingly, a uniform thin film is formed on the substrate 10 by the rotation of the substrate setter 12 rotating in the first direction and the rotation of each susceptor 16 rotating in the second direction opposite to the first direction. Can be formed. However, as shown in FIG. 1, when the substrate setter 12 and the plurality of susceptors 16 are processed and rotated, foreign matter (particles) are caused by friction between the inner circumference of the substrate setter 12 and the planetary gear 14. ), And damage to parts is likely to occur.

In order to solve the problems of the prior art as described above, the present invention relates to a disk and the disk by means of revolving the substrate holding means in the first direction and rotating the susceptor in the second direction opposite to the first direction. An object of the present invention is to provide a substrate placing means for depositing a uniform thin film on a substrate while minimizing generation of foreign matters due to friction of the susceptor, and a substrate processing apparatus including the same.

Substrate mounting means according to the present invention for achieving the above object, the disk having a plurality of insertion areas; A plurality of susceptors installed in each of the plurality of insertion regions and in which a substrate is mounted; Drive force transmission means installed on each side of the plurality of susceptors; And a gas supply device for supplying a driving gas for applying the driving force to the driving force transmission means.

In the substrate mounting means as described above, the disk is rotated in a first direction, and each of the plurality of susceptors is characterized in that it rotates in a second direction opposite to the first direction.

In the substrate mounting means as described above, the driving force transmission means is characterized in that a plurality of wings installed on each side of the plurality of susceptors.

In the substrate mounting means as described above, the plurality of wings are arranged at equal intervals, each of the plurality of wings is characterized in that inclined arrangement in the range of 0 to 45 degrees.

In the substrate mounting means as described above, the gas supply device, the buffer space is installed in the center of the disk for receiving the drive gas; A plurality of gas injection pipes connected to the buffer space and corresponding to respective side surfaces of the plurality of susceptors; A gas introduction pipe connected to the buffer space and supplying the driving gas; And a driving gas supply unit connected to the gas introduction pipe.

In the substrate mounting means as described above, a flow space in which the driving gas flows is set between each of the plurality of insertion regions and the plurality of susceptors.

In the substrate mounting means as described above, it characterized in that it comprises an alignment device for aligning each of the plurality of susceptors to the plurality of insertion areas.

In the substrate mounting means as described above, the alignment device includes a projection provided in the central portion of the plurality of insertion regions, and the insertion portion is installed in the lower central portion of each of the plurality of disks and the projection is inserted. It is done.

Substrate processing apparatus for achieving the above object, the chamber providing a reaction space; A first gas supply device for supplying a process gas to the reaction space; A substrate mounting means including a disk having a plurality of insertion regions, a plurality of susceptors provided on each of the plurality of insertion regions, and a substrate on which the substrate is seated, and a driving force transmission means installed on each side of the plurality of susceptors; ; And a second gas supply device for supplying a driving gas for applying the driving force to the driving force transmission means.

Substrate mounting means and a substrate processing apparatus including the same of the present invention has the following effects.

In a substrate placing means comprising a disk having a plurality of insertion regions and a plurality of susceptors provided in each of the plurality of insertion regions and in which a plurality of substrates are respectively placed, the disk revolves in a first direction by a shaft, and the susceptor A plurality of blades are provided on the side of the driving force, and driving gases are supplied to the plurality of blades to rotate the susceptor in a second direction opposite to the first direction, thereby depositing a uniform thin film on the substrate. It is possible. Since the susceptor is supported by the driving gas in the insertion region and rotates, the susceptor minimizes the generation of foreign substances due to the friction between the disk and the susceptor and does not affect the characteristics of the thin film. It is possible to prevent the deviation of the rotation path when the susceptor rotates by installing a matching means including a protrusion provided in the center of the insertion region and an insertion portion installed in the lower portion of the susceptor corresponding to the protrusion.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a plan view of a substrate mounting means according to an embodiment of the present invention, and FIG. 4 is a sectional view of a substrate mounting means according to an embodiment of the present invention. 6 is an exploded perspective view of the substrate mounting means according to an embodiment of the present invention, Figure 7 is a detailed view of the susceptor according to an embodiment of the present invention.

As shown in FIG. 2, the substrate processing apparatus 112 is disposed inside the chamber 114 and the chamber 114 that provides a reaction space, and the substrate placing means 118 and the substrate settled on which the plurality of substrates 116 are placed. The first gas supply device 122 for supplying the process gas into the chamber 114 facing the means 118, the shaft 124 for raising and lowering and rotating the substrate setter 118, the chamber 114 inside And exhaust means 126 for exhausting the process gas. The exhaust means 126 installed in the lower portion of the chamber 114 includes an exhaust port 142 and an exhaust pump 144 for discharging the gas ejected from the exhaust port 142.

2 to 6, the substrate mounting means 118 is supported by the disk 130 and the disk 130 rotating in the first direction by the shaft 124, and the plurality of substrates 116 are placed therein. , A plurality of susceptors 128 rotating in a second direction opposite to the first direction, a plurality of insertion regions 150 installed in the disc 130 and into which each of the plurality of susceptors 128 is inserted, and a plurality of A plurality of engaging portions 152 that can be mounted to each of the plurality of susceptors 128 along the inner circumference of the insertion region 150 of the. In addition, the heating means 120 positioned below the disk 130 corresponding to the plurality of susceptors 128 is installed. The heating means 120 uses a lamp heater or an induction heater. The substrate setter 118 includes an alignment means 174 that aligns the susceptor 128 with the insertion region 150 and functions as a rotation axis when the susceptor 128 rotates.

As described above, the substrate mounting means 118 is uniform on the substrate 116 by the disk 130 revolving in the first direction and the susceptor 128 rotating in the second direction opposite to the first direction. Thin film deposition is possible. The alignment means 174 includes a protrusion 170 installed at the center of the bottom surface of the insertion region 150, and an insertion portion 172 installed at the lower center portion of the susceptor 128 corresponding to the protrusion 170. A gap enough to rotate the susceptor 128 is formed between the protrusion 170 and the insertion part 172. The alignment means 174 is a projection 170 of the insertion region 150 is inserted into the insertion portion 172 of the susceptor 128, when the susceptor 128 is rotated, the susceptor 128 is stably It prevents the departure from being able to rotate.

As shown in FIG. 6, the susceptor 128 is provided with a plurality of lift pin holes 154 to which a plurality of lift pins (not shown) may be lifted and lowered so as to settle or separate the substrate 116. The plurality of susceptors 128 are made thinner than the disk 130. 2 and 4, the second gas injection means 180 is provided at the center of the shaft 124 to provide a driving force for drawing from the outside and rotating the plurality of susceptors 128. The second gas injection means 180 communicates with the circular buffer space 180a, the plurality of insertion regions 150, and the buffer space 180a, which are embedded in the center of the substrate setter 118 and accommodate the driving gas. In order to supply the driving gas to the plurality of gas injection pipes 180b and the buffer space 180a for providing the driving gas for the rotation of the susceptor 128, the gas is installed perpendicular to the center region of the shaft 124. It consists of an introduction pipe 180c, and a drive gas supply part (not shown). The buffer space 180a is built in the center of the disk 130, but is shown in a state of cutting the upper surface for convenience of illustration in FIG. The buffer space 180a is connected to the gas inlet pipe 180c at the lower side thereof, and is connected to the plurality of gas injection pipes 180b at the side surface thereof.

The second gas injection means 180 supplies an inert gas or a non-reactive gas that does not affect the process gas in the reaction space. Nitrogen gas is used as the non-reactive gas. In order to rotate the susceptor 128 on the side of the susceptor 128, a plurality of wings 182 are installed as a driving force transmission means for transmitting a driving force of the driving gas injected from the gas injection pipe 180b. A flow space 184 is formed between the plurality of wings 182 and the inner circumference of the insertion region 150 to allow the driving gas to sufficiently flow. In addition, in the upper portion of the engaging portion 152 in which each of the susceptors 128 is mounted along the inner circumference of the insertion region 150, the insertion region 150 and the susceptor 128 may be rotatable. The rotating space 186 is set, and the driving gas is discharged to the reaction space through the rotating space 186. Accordingly, the susceptor 128 may rotate while the driving gas is injected into the plurality of wings 182 in the flow space 184. Each of the plurality of vanes 180 has an angle in the range of 0 to 45 degrees and is arranged at equal intervals.

Due to the heating means 120 for heating the substrate 116 in the lower portion of the susceptor 128, it is difficult to install a driving force transmission means for rotating the susceptor 128 in the lower portion of the susceptor 128. In order to install the driving force transmission means in the lower part of the susceptor 128, additional parts are mounted in the lower part of the susceptor 128, or mechanical processing of the susceptor 128 is required. However, the addition and mechanical processing of such components can cause the problem of uneven temperature distribution of susceptor 128. In addition, the heating means 120 may not cover the susceptor 128 corresponding to the position where the driving force transmitting means is installed. Even in this case, the same causes a problem that the temperature distribution of the susceptor 128 is uneven. Therefore, in the embodiment of the present invention, the plurality of wings 182 susceptor as a driving force transmission means capable of maintaining the temperature distribution of the susceptor 128 uniformly and rotating the susceptor 128 with minimal processing. Attach to the side of 128.

The gas injection pipe 180b is installed on the inner side surface of the insertion region 150 to substantially correspond to the vertical center of each of the plurality of wings 182. The distance of the plurality of gas injection pipes 180b from the center of the disk 130 is the same, and the angle formed by each of the plurality of gas injection pipes 180b is the same. The number of gas injection pipes 180b and the susceptor 128 is the same, but two or more gases simultaneously connected to the buffer space 180a to the plurality of wings 182 installed at the outer circumference of the susceptor 128. The driving gas may be supplied by the injection tube 180b. However, when the driving gas is supplied to the susceptor 128 by two or more gas injection pipes 180b, the driving gas must be injected in the same direction. If sprayed in the other direction, a problem may occur in the normal rotation of the susceptor 128.

When the driving gas is supplied through the plurality of gas injection pipes 180b of the second gas injection means 180, the driving gas is supplied to the flow space 182, and the driving force by the driving gas is applied to the plurality of vanes 180. Delivered. When the driving gas is supplied to the flow space 182, the pressure of the plurality of insertion regions 150 is higher than the reaction space and the susceptor 118 is lifted from the bottom of the plurality of insertion regions 150. Is discharged into the space between the susceptor 118 and the locking portion 152, the pressure of the insertion region 150 is maintained the same while the driving gas is supplied. The susceptor 118 is supported by the driving gas, and the driving gas is supplied to the plurality of wings 184 so that the susceptor 118 rotates the protrusion 170 on the rotation axis.

The substrate placing means 118 is formed by a disk 130 rotating in a first direction by a shaft 124 and a susceptor 128 rotating in a second direction opposite to the first direction by a driving gas. A uniform thin film deposition on 116 is possible. When the driving gas is supplied to rotate the susceptor 128 through the gas injection pipe 180b, the gas flow rate is gradually increased without supplying the driving gas at the flow rate for driving the susceptor 128 from the beginning, and thus the normal gas is supplied. There is a need for a ramping time to reach the flow rate. When the gas flow rate for driving the susceptor 128 is applied to the susceptor 128 from the beginning, the susceptor 128 is inclined in one direction due to a sudden increase in flow rate, and friction with the bottom surface of the insertion region 150 is caused. Rotating phenomenon may occur. Therefore, it is possible to prevent the friction between the susceptor 128 and the disk 130 by gradually increasing the flow rate of the driving gas during the ramping type.

In addition, when the susceptor 128 is rotated faster than the normal state in the process of supplying the driving gas having a normal flow rate through the ramp time to rotate the susceptor 128, the flow rate of the driving gas is temporarily increased. Instead, an intermediate ramping time is needed to slowly increase the flow rate of the drive gas. The intermediate ramping time allows the susceptor 128 to rotate normally without departing from the rotation path. The protrusion 170 located at the bottom of the insertion region 150 and the insertion portion 172 of the disc 130 into which the protrusion 170 is inserted function as a rotation axis for preventing the disc 130 from moving out of the center thereof. This ensures stability.

1 is a plan view of a substrate mounting means according to the prior art

2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention;

3 is a plan view of the substrate mounting means according to an embodiment of the present invention

Figure 4 is a cross-sectional view of the substrate mounting means according to an embodiment of the present invention

6 is an exploded perspective view of the substrate settlement means according to an embodiment of the present invention;

7 is a detailed view of a susceptor according to an embodiment of the present invention.

Claims (9)

A disk having a plurality of insertion regions; A plurality of susceptors installed in each of the plurality of insertion regions and in which a substrate is mounted; Drive force transmission means installed on each side of the plurality of susceptors; A gas supply device for supplying a driving gas for applying a driving force to the driving force transmitting means; Substrate settlement means comprising a. The method of claim 1, And the disk is rotated in a first direction, and each of the plurality of susceptors is rotated in a second direction opposite to the first direction. The method of claim 1, The driving force transmitting means is a substrate settlement means, characterized in that a plurality of wings installed on each side of the plurality of susceptors. The method of claim 3, wherein The plurality of blades are arranged at equal intervals, each of the plurality of blades substrate placement means characterized in that inclined arrangement in the range of 0 to 45 degrees. The method of claim 1, The gas supply device, A buffer space installed at the center of the disk to receive the driving gas; A plurality of gas injection pipes connected to the buffer space and corresponding to respective side surfaces of the plurality of susceptors; A gas introduction pipe connected to the buffer space and supplying the driving gas; A driving gas supply unit connected to the gas introduction pipe; Substrate settlement means comprising a. The method of claim 1, And a flow space in which the driving gas flows is set between each of the plurality of insertion regions and the plurality of susceptors. The method of claim 1, Substrate alignment means for aligning each of the plurality of susceptors with the plurality of insertion regions. The method of claim 7, wherein The alignment device includes a protrusion provided in a central portion of the plurality of insertion regions, and an insertion portion provided in the lower central portion of each of the plurality of disks and the protrusion inserted therein. A chamber providing a reaction space; A first gas supply device for supplying a process gas to the reaction space; A substrate mounting means including a disk having a plurality of insertion regions, a plurality of susceptors provided on each of the plurality of insertion regions, and a substrate on which the substrate is seated, and a driving force transmission means installed on each side of the plurality of susceptors; ; A second gas supply device for supplying a driving gas for applying a driving force to the driving force transmitting means; Substrate processing apparatus comprising a substrate mounting means comprising a.

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