KR20100028915A - 니켈-금 도금방법 및 인쇄회로기판 - Google Patents
니켈-금 도금방법 및 인쇄회로기판 Download PDFInfo
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- KR20100028915A KR20100028915A KR1020080087865A KR20080087865A KR20100028915A KR 20100028915 A KR20100028915 A KR 20100028915A KR 1020080087865 A KR1020080087865 A KR 1020080087865A KR 20080087865 A KR20080087865 A KR 20080087865A KR 20100028915 A KR20100028915 A KR 20100028915A
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- Prior art keywords
- nickel
- plating layer
- layer
- nickel plating
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007747 plating Methods 0.000 title claims abstract description 171
- 238000000034 method Methods 0.000 title claims abstract description 55
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 title claims abstract description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 212
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 106
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000010931 gold Substances 0.000 claims abstract description 36
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052737 gold Inorganic materials 0.000 claims abstract description 35
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 27
- 239000003054 catalyst Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 133
- 239000010949 copper Substances 0.000 description 12
- 238000007772 electroless plating Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 238000000635 electron micrograph Methods 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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- C—CHEMISTRY; METALLURGY
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/42—Coating with noble metals
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H05K2203/0716—Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
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Abstract
Description
Claims (10)
- 대상물을 무전해 니켈-금도금하는 방법으로서,상기 대상물의 표면에 제1 니켈 도금층을 형성하는 단계;상기 제1 니켈 도금층 위에 제2 니켈 도금층을 형성하는 단계; 및상기 제2 니켈 도금층 위에 금 도금층을 형성하는 단계를 포함하는 니켈-금 도금 방법.
- 제1항에 있어서,제1 니켈 도금층을 형성하는 단계는,상기 대상물에 촉매를 부착하는 단계;상기 대상물에 무전해 니켈 도금하는 단계를 포함하는 것을 특징으로 하는 니켈-금 도금 방법.
- 제2항에 있어서,상기 촉매는 팔라듐(Pd)을 포함하는 니켈-금 도금방법.
- 제1항에 있어서,제2 니켈 도금층을 형성하는 단계는,상기 제1 니켈 도금층에 촉매를 부착하는 단계;상기 제1 니켈 도금층에 무전해 니켈 도금하는 단계를 포함하는 것을 특징으로 하는 니켈-금도금 방법.
- 제4항에 있어서,상기 촉매는 팔라듐(Pd)을 포함하는 니켈-금 도금방법.
- 제1항에 있어서,상기 제1 니켈 층을 형성하는 단계 이전에대상물의 표면에 조도를 형성하는 단계를 더 포함하는 니켈-금 도금방법.
- 기판;상기 기판의 표면에 형성된 회로패턴;상기 회로패턴 위에 형성된 제1 니켈 도금층;상기 제1 니켈 도금층 위에 형성된 제2 니켈 도금층; 및상기 제2 니켈 도금층 위에 형성된 금 도금층을 포함하는 인쇄회로기판.
- 제7항에 있어서,상기 제2 니켈 도금층은 상기 제1 니켈 도금층 보다 두께가 얇은 것을 특징으로 하는 인쇄회로기판.
- 제7항에 있어서,상기 회로패턴과 상기 제1 니켈 도금층 사이에 제1 팔라듐층이 개재된 인쇄회로기판.
- 제7항에 있어서,상기 제1 니켈 도금층과 상기 제2 니켈 도금층 사이에 제2 팔라듐층이 개재된 인쇄회로기판.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080087865A KR101004063B1 (ko) | 2008-09-05 | 2008-09-05 | 니켈-금 도금방법 및 인쇄회로기판 |
JP2009017933A JP2010062517A (ja) | 2008-09-05 | 2009-01-29 | ニッケル−金メッキ方法及び印刷回路基板 |
US12/369,143 US7982138B2 (en) | 2008-09-05 | 2009-02-11 | Method of nickel-gold plating and printed circuit board |
TW098106011A TW201011124A (en) | 2008-09-05 | 2009-02-25 | Method of nickel-gold plating and printed circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080087865A KR101004063B1 (ko) | 2008-09-05 | 2008-09-05 | 니켈-금 도금방법 및 인쇄회로기판 |
Publications (2)
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KR20100028915A true KR20100028915A (ko) | 2010-03-15 |
KR101004063B1 KR101004063B1 (ko) | 2010-12-24 |
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US (1) | US7982138B2 (ko) |
JP (1) | JP2010062517A (ko) |
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Cited By (2)
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KR20180027253A (ko) | 2016-09-06 | 2018-03-14 | 삼성전기주식회사 | 적층형 커패시터 및 그 실장 기판 |
KR20180058034A (ko) | 2016-11-23 | 2018-05-31 | 삼성전기주식회사 | 적층형 커패시터 |
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JP2011026680A (ja) * | 2009-07-28 | 2011-02-10 | Renesas Electronics Corp | 半導体装置の製造方法及び半導体装置の製造装置 |
CN102706802A (zh) * | 2012-06-04 | 2012-10-03 | 汕头超声印制板公司 | 一种化金工艺的镍镀层腐蚀快速检测方法 |
CN112176302B (zh) * | 2020-09-17 | 2022-07-19 | 苏州方林科技股份有限公司 | 一种掺杂稀土元素的梯度功能改性镍金镀层及其制备方法 |
US20220148954A1 (en) * | 2020-11-06 | 2022-05-12 | Advanced Semiconductor Engineering, Inc. | Wiring structure and method for manufacturing the same |
KR102605141B1 (ko) | 2022-11-29 | 2023-11-22 | 김기형 | 금속기재의 표면처리용 도금방법 |
KR102803624B1 (ko) | 2024-08-05 | 2025-05-08 | 주식회사 지씨이 | 니켈-금 전해도금 장치 |
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US4842961A (en) * | 1988-03-04 | 1989-06-27 | Advanced Materials Technology Corp. | Alternate electrolytic/electroless-layered lid for electronics package |
JP3353960B2 (ja) * | 1993-04-23 | 2002-12-09 | イビデン株式会社 | プリント配線板のボンディングパッド及び導体パターンの無電解金メッキ方法 |
JPH06310830A (ja) * | 1993-04-27 | 1994-11-04 | C Uyemura & Co Ltd | プリント配線板の銅回路パターン上への無電解めっき方法 |
US5780143A (en) * | 1995-03-01 | 1998-07-14 | Tokuyama Corporation | Circuit board |
US6953986B2 (en) * | 1999-12-10 | 2005-10-11 | Texas Instruments Incorporated | Leadframes for high adhesion semiconductor devices and method of fabrication |
JP4366632B2 (ja) | 2003-06-24 | 2009-11-18 | 日立化成工業株式会社 | 内層回路付金属張積層板、多層プリント配線板及びそれらの製造方法 |
US7078796B2 (en) * | 2003-07-01 | 2006-07-18 | Freescale Semiconductor, Inc. | Corrosion-resistant copper bond pad and integrated device |
JP2005196100A (ja) * | 2003-12-31 | 2005-07-21 | Rohm & Haas Electronic Materials Llc | 非導電性基体を金属化する方法およびそれにより形成される金属化非導電性基体 |
KR100688833B1 (ko) * | 2005-10-25 | 2007-03-02 | 삼성전기주식회사 | 인쇄회로기판의 도금층 형성방법 및 이로부터 제조된인쇄회로기판 |
JP2007165634A (ja) * | 2005-12-14 | 2007-06-28 | Fujitsu Ltd | 配線基板の製造方法 |
KR100648970B1 (ko) * | 2006-01-12 | 2006-11-28 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
KR100759452B1 (ko) | 2007-05-17 | 2007-09-20 | 주식회사 비에이치 | 니켈 패턴이 형성된 질화알루미늄 기판의 제조방법 |
US8314348B2 (en) * | 2008-03-03 | 2012-11-20 | Ibiden Co., Ltd. | Multilayer printed wiring board and method of manufacturing multilayer printed wiring board |
US20090218119A1 (en) * | 2008-03-03 | 2009-09-03 | Ibiden Co., Ltd | Method of manufacturing multilayer printed wiring board |
US20090286104A1 (en) * | 2008-05-16 | 2009-11-19 | General Electric Company | Multi-layered nickel-phosphorous coatings and processes for forming the same |
-
2008
- 2008-09-05 KR KR1020080087865A patent/KR101004063B1/ko not_active Expired - Fee Related
-
2009
- 2009-01-29 JP JP2009017933A patent/JP2010062517A/ja active Pending
- 2009-02-11 US US12/369,143 patent/US7982138B2/en not_active Expired - Fee Related
- 2009-02-25 TW TW098106011A patent/TW201011124A/zh unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180027253A (ko) | 2016-09-06 | 2018-03-14 | 삼성전기주식회사 | 적층형 커패시터 및 그 실장 기판 |
US10325725B2 (en) | 2016-09-06 | 2019-06-18 | Samsung Electro-Mechanics Co., Ltd. | Multilayer capacitor and board having the same |
KR20180058034A (ko) | 2016-11-23 | 2018-05-31 | 삼성전기주식회사 | 적층형 커패시터 |
Also Published As
Publication number | Publication date |
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TW201011124A (en) | 2010-03-16 |
US20100059257A1 (en) | 2010-03-11 |
JP2010062517A (ja) | 2010-03-18 |
US7982138B2 (en) | 2011-07-19 |
KR101004063B1 (ko) | 2010-12-24 |
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