KR20090123197A - 에르븀 이온 및 이테르븀 이온이 도핑된 이산화티탄 분말의제조방법 및 이를 산란층으로 적용한 염료감응 태양전지 - Google Patents
에르븀 이온 및 이테르븀 이온이 도핑된 이산화티탄 분말의제조방법 및 이를 산란층으로 적용한 염료감응 태양전지 Download PDFInfo
- Publication number
- KR20090123197A KR20090123197A KR1020080049165A KR20080049165A KR20090123197A KR 20090123197 A KR20090123197 A KR 20090123197A KR 1020080049165 A KR1020080049165 A KR 1020080049165A KR 20080049165 A KR20080049165 A KR 20080049165A KR 20090123197 A KR20090123197 A KR 20090123197A
- Authority
- KR
- South Korea
- Prior art keywords
- dye
- titanium dioxide
- dioxide powder
- solar cell
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 239000004408 titanium dioxide Substances 0.000 title claims abstract description 46
- 239000000843 powder Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- -1 erbium ions Chemical class 0.000 title claims description 8
- 229910052691 Erbium Inorganic materials 0.000 title 1
- 229910052769 Ytterbium Inorganic materials 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 31
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 239000006229 carbon black Substances 0.000 claims abstract description 8
- YBYGDBANBWOYIF-UHFFFAOYSA-N erbium(3+);trinitrate Chemical compound [Er+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YBYGDBANBWOYIF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002243 precursor Substances 0.000 claims abstract description 8
- KUBYTSCYMRPPAG-UHFFFAOYSA-N ytterbium(3+);trinitrate Chemical compound [Yb+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O KUBYTSCYMRPPAG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000975 dye Substances 0.000 claims description 30
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012046 mixed solvent Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 3
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- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 2
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- WSUWIPJXQXYVNR-UHFFFAOYSA-J 2-(4-carboxylatopyridin-2-yl)pyridine-4-carboxylate;ruthenium(4+);dithiocyanate Chemical compound [Ru+4].[S-]C#N.[S-]C#N.[O-]C(=O)C1=CC=NC(C=2N=CC=C(C=2)C([O-])=O)=C1 WSUWIPJXQXYVNR-UHFFFAOYSA-J 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- IICCLYANAQEHCI-UHFFFAOYSA-N 4,5,6,7-tetrachloro-3',6'-dihydroxy-2',4',5',7'-tetraiodospiro[2-benzofuran-3,9'-xanthene]-1-one Chemical compound O1C(=O)C(C(=C(Cl)C(Cl)=C2Cl)Cl)=C2C21C1=CC(I)=C(O)C(I)=C1OC1=C(I)C(O)=C(I)C=C21 IICCLYANAQEHCI-UHFFFAOYSA-N 0.000 description 1
- RHQYMLWGPGEEOU-UHFFFAOYSA-N 5-chloro-1-ethyl-2-methylimidazole Chemical compound CCN1C(C)=NC=C1Cl RHQYMLWGPGEEOU-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- YIYFFLYGSHJWFF-UHFFFAOYSA-N [Zn].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 Chemical compound [Zn].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 YIYFFLYGSHJWFF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
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- IINNWAYUJNWZRM-UHFFFAOYSA-L erythrosin B Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C1=C2C=C(I)C(=O)C(I)=C2OC2=C(I)C([O-])=C(I)C=C21 IINNWAYUJNWZRM-UHFFFAOYSA-L 0.000 description 1
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- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
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- SOUHUMACVWVDME-UHFFFAOYSA-N safranin O Chemical compound [Cl-].C12=CC(N)=CC=C2N=C2C=CC(N)=CC2=[N+]1C1=CC=CC=C1 SOUHUMACVWVDME-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
- C01G23/053—Producing by wet processes, e.g. hydrolysing titanium salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Hybrid Cells (AREA)
Abstract
Description
구 분 | 전류 밀도(mA) | 전압(V) | 충진계수 | 광전환 효율(%) |
실시예 1 | 18.9 | 0.773 | 0.615 | 8.98 |
비교예 1 | 18.4 | 0.773 | 0.614 | 8.72 |
비교예 2 | 17.1 | 0.743 | 0.613 | 7.80 |
Claims (12)
- (S1) 용매에 티타늄 이소프로폭사이드, 에르븀(III) 나이트레이트(Er(NO3)3)와 이테르븀(Ⅲ) 나이트레이트(Yb(NO3)3) 및 카본 블랙을 혼합하여 혼합물을 제조하는 단계;(S2) 상기 혼합물에 물을 첨가하면서 교반하여 젤을 형성하는 단계;(S3) 상기 젤을 건조시켜 전구체를 제조하는 단계; 및(S4) 상기 전구체를 열처리 단계를 포함하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- 제1항에 있어서,상기 용매는 아세트산 및 에탄올을 포함하는 혼합 용매인 것을 특징으로 하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- 제2항에 있어서,상기 혼합 용매에서 아세트산 및 에탄올의 함량은 상기 혼합 용매 총 부피 기준으로 각각 1~20 부피%, 80~99 부피%인 것을 특징으로 하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- 제1항에 있어서,상기 (S4) 단계에서 열처리 온도 600~800℃인 것을 특징으로 하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- 제1항에 있어서,상기 (S3) 단계에서 건조 온도 100~130℃인 것을 특징으로 하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- 제1항에 있어서,상기 혼합물에는 상기 에르븀(III) 나이트레이트(Er(NO3)3)와 이테르븀(Ⅲ) 나이트레이트(Yb(NO3)3)가 각각 상기 티타늄 이소프로폭사이드 몰 수 기준으로 5~20 몰% 첨가되고,상기 카본 블랙은 상기 티타늄 이소프로폭사이드 100 중량부 대비 10~200 중량부 첨가되는 것을 특징으로 하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- 제1항에 있어서,상기 카본 블랙은 아세틸렌 블랙, 퍼니스 블랙 및 수퍼P로 이루어진 군에서 선택되는 어느 하나 이상인 것을 특징으로 하는 Er3+와 Yb3+가 도핑된 이산화티탄 분말의 제조방법.
- (A) 투명기판; 상기 투명기판의 상부에 형성된 투명전도성 산화물층; 및 상기 투명전도성 산화물층의 상부에 형성되며, 염료가 흡착되어 있는 나노 산화물층을 포함하는 음전극;(B) 투명기판; 상기 투명기판의 상부에 형성된 투명전도성 산화물층; 및 상기 투명전도성 산화물층의 상부에 형성된 백금층을 포함하는 양전극;(C) 상기 음전극의 나노 산화물층의 상부에 형성되며, Er3+와 Yb3+가 도핑된 이산화티탄 분말을 포함하여 이루어지는 산란층; 및(D) 상기 음전극 및 양전극 사이에 개재되는 전해질을 포함하여 이루어진 것 을 특징으로 하는 염료감응 태양전지.
- 제8항에 있어서,상기 음전극 및 양전극에 포함되는 투명전도성 산화물층은 불소가 도핑된 인듐 틴 옥사이드 또는 인듐 틴 옥사이드를 포함하여 이루어진 층인 것을 특징으로 하는 염료감응 태양전지.
- 제8항에 있어서,상기 나노 산화물층은 이산화티탄, 이산화주석 및 산화아연으로 이루어진 군으로부터 선택된 1종 이상을 포함하여 이루어진 층인 것을 특징으로 하는 염료감응 태양전지.
- 제8항에 있어서,상기 나노 산화물층에 흡착된 염료는 루테늄 착물, 크산틴계 염료, 시아닌계 염료, 염기성 염료, 포르피린계 화합물, 아조계 염료, 프탈로시아닌 화합물, 안트라퀴논계 염료 및 다환 퀴논계 염료로 이루어지는 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응 태양전지.
- 제8항에 있어서,상기 전해질은 요오드화물과 삼요오화물의 쌍으로 이루어지는 것을 특징으로 하는 염료감응 태양전지.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011102966A3 (en) * | 2010-02-22 | 2011-12-08 | Brite Hellas Ae | Quasi-solid-state photoelectrochemical solar cell formed using inkjet printing and nanocomposite organic-inorganic material |
KR101138054B1 (ko) * | 2010-06-28 | 2012-04-23 | 현대하이스코 주식회사 | 염료감응형 태양전지용 이산화티타늄 페이스트 제조 방법 |
KR101353954B1 (ko) * | 2012-07-25 | 2014-01-28 | 한국에너지기술연구원 | 오르쏘 실리케이트를 포함하는 염료감응태양전지용 나노페이스트의 제조방법, 그 페이스트, 그 페이스트를 이용한 전극의 제조방법, 그 전극 및 그 전극을 포함하는 염료감응태양전지 |
KR101366390B1 (ko) * | 2011-10-28 | 2014-02-27 | 한국에너지기술연구원 | 태양전지 카본블랙을 포함하는 전극 페이스트의 제조방법, 그 페이스트, 그 페이스트를 이용한 전극의 제조방법, 그 전극 및 그 전극을 포함하는 태양전지 |
-
2008
- 2008-05-27 KR KR1020080049165A patent/KR20090123197A/ko not_active Ceased
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011102966A3 (en) * | 2010-02-22 | 2011-12-08 | Brite Hellas Ae | Quasi-solid-state photoelectrochemical solar cell formed using inkjet printing and nanocomposite organic-inorganic material |
KR101138054B1 (ko) * | 2010-06-28 | 2012-04-23 | 현대하이스코 주식회사 | 염료감응형 태양전지용 이산화티타늄 페이스트 제조 방법 |
KR101366390B1 (ko) * | 2011-10-28 | 2014-02-27 | 한국에너지기술연구원 | 태양전지 카본블랙을 포함하는 전극 페이스트의 제조방법, 그 페이스트, 그 페이스트를 이용한 전극의 제조방법, 그 전극 및 그 전극을 포함하는 태양전지 |
KR101353954B1 (ko) * | 2012-07-25 | 2014-01-28 | 한국에너지기술연구원 | 오르쏘 실리케이트를 포함하는 염료감응태양전지용 나노페이스트의 제조방법, 그 페이스트, 그 페이스트를 이용한 전극의 제조방법, 그 전극 및 그 전극을 포함하는 염료감응태양전지 |
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