KR20090106339A - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Abstract

PURPOSE: A semiconductor manufacturing apparatus and a semiconductor manufacturing method thereof are provided to suppress effect of by-products generated in the plating reaction and reduce the used amount of the electroless plating solution. CONSTITUTION: A semiconductor manufacturing apparatus comprises a holding mechanism, a nozzle, a board rotation device, a nozzle transfer device, and a controller. The holding mechanism maintains a substrate(W) to be rotated. The nozzle supplies the processing liquid to perform the plating treatment on the processed surface of the substrate. The board rotation device rotates the substrate maintained in the holding mechanism in the direction according to the processed surface. The nozzle transfer device moves a nozzle in the location faced with the processed surface of the substrate maintained in the holding mechanism in the direction according to the processed surface. The controller controls the supply of the processing liquid by the nozzle and the movement of processing liquid by the nozzle transfer device.

Description

Semiconductor manufacturing apparatus, semiconductor manufacturing method {SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method for forming a cap metal on a wiring formed in a substrate or the like to be processed, and more particularly, a semiconductor capable of forming a cap metal with a uniform film thickness on the surface of the processing target. A manufacturing apparatus and a semiconductor manufacturing method.

In the design and manufacture of semiconductor devices, the improvement of the operation speed and the further high integration are aimed at. On the other hand, it is pointed out that electromigration EM tends to occur by high speed operation | movement or the increase of the current density by refinement | miniaturization of wiring, and it causes the disconnection of wiring. This causes a decrease in reliability. For this reason, Cu (copper), Ag (silver), etc. with low specific resistance are used as a material of the wiring formed on the board | substrate of a semiconductor device. In particular, copper has a low specific resistance of 1.8 mu OMEGA -cm, which is expected to have high EM resistance, and is therefore expected to be an advantageous material for speeding up semiconductor devices.

Generally, in order to form Cu wiring on a board | substrate, the damascene method which forms the via and trench for embedding wiring in an insulating film by etching, and embeds Cu wiring in these is used. Further, a plating solution containing CoWB (cobalt tungsten boron) or CoWP (cobalt tungsten phosphorus) or the like is supplied to the surface of the substrate having the Cu wiring, and a metal film called cap metal is deposited on the Cu wiring by electroless plating. An attempt is made to cover and improve the EM resistance of the semiconductor device (for example, Patent Document 1).

The cap metal is formed by supplying an electroless plating solution to the surface of the substrate having the Cu wiring. For example, a uniform liquid flow is formed on the surface of the substrate by fixing the substrate to the rotating support and supplying an electroless plating solution while rotating the rotating support. Thereby, a uniform cap metal can be formed in the whole surface of a board | substrate (for example, patent document 2).

However, it is known that electroless plating has a great influence on the precipitation rate of metal according to reaction conditions, such as composition of a plating liquid, temperature, and the like. In addition, the problem that the by-products (residues) caused by the plating reaction in the form of a slurry and stays on the surface of the substrate inhibits the uniform plating flow and prevents the replacement of the deteriorated electroless plating solution with a new electroless plating solution. have. This makes it difficult to form a cap metal having a uniform film thickness within the substrate surface because the reaction conditions on the substrate are locally different. In addition, the surface of the substrate on which the cap metal is applied has a local hydrophilic region or a hydrophobic region due to the density of the wiring formed or the difference in the surface material, so that the electroless plating solution cannot be uniformly supplied throughout the substrate. There arises a problem that a cap metal having a uniform film thickness cannot be formed in the substrate surface.

Patent Document 1: Japanese Patent Laid-Open No. 2006-111938

Patent Document 2: Japanese Patent Application Laid-Open No. 2001-073157

As described above, in the conventional plating method, there is a problem that the electroless plating solution cannot be uniformly supplied to the entire substrate, and it is difficult to form a uniform film thickness within the substrate surface.

SUMMARY OF THE INVENTION The present invention has been made to solve this problem, and it is possible to reduce the amount of electroless plating solution used, and also to suppress the influence of reaction by-products generated in the plating reaction and to have a uniform film thickness within the surface of the substrate. It is an object of the present invention to provide a semiconductor manufacturing apparatus capable of forming a metal and a method of manufacturing a semiconductor.

In order to achieve the above object, the semiconductor manufacturing apparatus according to the first aspect of the present invention includes a holding mechanism for rotatably holding a substrate, a nozzle for supplying a processing liquid for performing a plating treatment to the surface to be processed on the substrate; A substrate rotating mechanism for rotating the substrate held by the holding mechanism in the direction along the target surface, a nozzle moving mechanism for moving the nozzle in the direction along the target surface at a position facing the target surface on the substrate held by the holding mechanism; And a control unit for controlling supply of the processing liquid by the nozzle and movement of the nozzle by the nozzle moving mechanism. The control unit includes a first control for continuously supplying the processing liquid from the nozzle while moving the nozzle between the center portion and the peripheral portion of the substrate, and then stopping the nozzle at a predetermined position to intermittently supply the processing liquid from the nozzle. 2 Control may be executed.

According to another aspect of the present invention, there is provided a semiconductor manufacturing method comprising a first cleaning step of cleaning a surface to be processed of a substrate, a position facing the central portion of the surface to be processed on the substrate cleaned in the first cleaning step, and a peripheral portion of the surface to be processed. The nozzle is stopped at a predetermined position facing the surface to be processed on the substrate which has been subjected to the first plating liquid supplying process and the first plating liquid supplying process through the nozzle while continuously moving the nozzle between the positions. In this state, a second plating liquid supply step of intermittently supplying the plating liquid to the surface to be processed through the nozzle, and a second cleaning process of cleaning the surface to be processed on the substrate which have undergone the first and second plating liquid supply processes are provided.

According to the present invention, it is possible to realize uniform film thickness formation within the substrate surface.

The general electroless plating process has each process of pre-cleaning, plating process, post-cleaning, back surface, end surface washing, and drying. Here, pre-cleaning is a process of performing a substrate surface treatment, such as hydrophilicization process of an object to-be-processed, an oxide film removal, an antirust film removal, and metal removal on an insulating film. Plating process is a process of supplying a plating liquid on a board | substrate and performing a plating process. Post-cleaning is a process of removing the residue etc. which were produced by plating precipitation reaction. Back surface cleaning is a process of removing the residue by the plating process in the back surface and end surface of a board | substrate. Drying is a process of drying a board | substrate. Each of these processes is realized by combining the rotation of the substrate, the supply of the cleaning liquid or the plating liquid onto the substrate, and the like.

By the way, in the plating process which supplies process liquids, such as a plating liquid, to a board | substrate, the film thickness of the film | membrane (plating process film) produced | generated by a plating process may become nonuniform because of supply nonuniformity of a process liquid. In particular, the nonuniformity of the film thickness becomes remarkable when the size of the substrate to be processed is large. The semiconductor manufacturing apparatus which concerns on the Example of this invention is for improving the problem of the film thickness change and the nonuniformity in each process of such an electroless plating process, especially in a plating process.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. 1 is a plan view showing the configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view showing an electroless plating unit of the semiconductor manufacturing apparatus of this embodiment, and FIG. 3 similarly shows an electroless plating unit. 4 is a diagram showing the configuration of a fluid supply device in the semiconductor manufacturing device of this embodiment.

As shown in FIG. 1, the semiconductor manufacturing apparatus of this embodiment includes a carrying in / out portion 1, a processing portion 2, a conveying portion 3, and a control device 5.

The carry-in / out part 1 is a mechanism which carries in / out of several board | substrate W in and out of a semiconductor manufacturing apparatus through FOUP: Front Opening Unified Pod (F). As shown in FIG. 1, three entry / exit ports 4 arranged in the Y-direction along the front side of the apparatus (side surface in the X-direction in FIG. 1) are formed in the carry-in / out part 1. The entrance port 4 has the mounting base 6 which mounts the hoop F, respectively. The partition 7 is formed in the back surface of the entrance port 4. 7 A of windows corresponding to the hoop F are formed in the partition 7 above the mounting base 6, respectively. The opener 8 which opens and closes the cover of the hoop F is provided in the window 7A, respectively, and the cover of the hoop F is opened and closed through the opener 8.

The processing part 2 is a processing unit group which performs each process mentioned above to the board | substrate W one by one. The processing unit 2 is a transfer unit (TRS) 10 which transfers the substrate W to and from the transfer unit 3, and an electroless plating which performs electroless plating and its back and forth processing on the substrate W. The unit PW 11, the heating unit HP 12 for heating the substrate W before and after the plating treatment, and the cooling unit COL for cooling the substrate W heated in the heating unit 12. (13) and the 2nd board | substrate conveyance mechanism 14 which is surrounded by these unit groups, is arrange | positioned in the substantially center of the processing part 2, and moves the board | substrate W between each unit.

The transfer unit 10 has, for example, a substrate transfer portion (not shown) formed in two stages above and below. The upper and lower substrate transfer units are used for the purpose of temporarily placing the lower end of the substrate W carried in from the entrance port 4 and temporarily placing the upper end of the substrate W into the entrance port 4. Can be used separately.

The two heating units 12 are arrange | positioned at the position adjacent to the Y direction of the delivery unit 10. FIG. The heating unit 12 has the heating plate arrange | positioned over 4 steps, respectively, for example. Two cooling units 13 are arrange | positioned in the position adjacent to the Y direction of the 2nd board | substrate conveyance mechanism 14. As shown in FIG. The cooling unit 13 has the cooling plate formed in the upper and lower stages, respectively, for example. The electroless plating unit 11 is arrange | positioned along the cooling unit 13 and the 2nd board | substrate conveyance mechanism 14 arrange | positioned at the position adjacent to a Y direction.

The 2nd board | substrate conveyance mechanism 14 has 14 A of conveyance arms of 2 steps | pieces, for example, up and down. 14A of upper and lower conveyance arms are each comprised by the up-down direction, and are comprised so that rotation is possible in a horizontal direction. Thereby, the 2nd board | substrate conveyance mechanism 14 carries out the board | substrate (") between the transfer unit 10, the electroless plating unit 11, the heating unit 12, and the cooling unit 13 via 14A of conveyance arms. W) is returned.

The conveyance part 3 is a conveyance mechanism located between the carrying-in / out part 1 and the process part 2, and conveying the board | substrate W one by one. In the conveyance part 3, the 1st board | substrate conveyance mechanism 9 which conveys the board | substrate W one by one is arrange | positioned. The board | substrate conveyance mechanism 9 has 9 A of upper and lower stage 2 conveyance arms which can move to a Y direction, for example, and transfer the board | substrate W between the carrying-in / out part 1 and the process part 2. Is done. Similarly, 9 A of conveyance arms are comprised so that elevation can be carried out in an up-down direction, and rotation is possible in a horizontal direction. Thereby, the 1st board | substrate conveyance mechanism 9 conveys the board | substrate W between arbitrary hoops F and the process part 2 via 9 A of conveyance arms.

The control device 5 stores a process controller 51 having a microprocessor, a user interface 52 connected to the process controller 51, a computer program for defining the operation of the semiconductor manufacturing apparatus according to this embodiment, and the like. The storage unit 53 is provided to control the processing unit 2, the conveying unit 3, and the like. The control apparatus 5 is connected online with the host computer which is not shown in figure, and controls the semiconductor manufacturing apparatus based on the instruction | command from a host computer. The user interface 52 is an interface including, for example, a keyboard or a display, and the storage unit 53 includes, for example, a CD-ROM, a hard disk, a nonvolatile memory, and the like.

Here, the operation of the semiconductor manufacturing apparatus according to this embodiment will be described. The substrate W to be processed is stored in the hoop F in advance. First, the 1st board | substrate conveyance mechanism 9 takes out the board | substrate W from the hoop F through the window 7A, and conveys it to the delivery unit 10. FIG. When the board | substrate W is conveyed to the delivery unit 10, the 2nd board | substrate conveyance mechanism 14 moves the board | substrate W from the transfer unit 10 to the hot of the heating unit 12 using 14 A of conveyance arms. Transfer to plate.

The heating unit 12 heats (prebakes) the substrate W to a predetermined temperature to remove the organic matter adhered to the substrate W surface. After the heat treatment, the second substrate transfer mechanism 14 conveys the substrate W from the heating unit 12 to the cooling unit 13. The cooling unit 13 cools the board | substrate W. FIG.

When the cooling process is completed, the second substrate transfer mechanism 14 transfers the substrate W to the electroless plating unit 11 using the transfer arm 14A. The electroless plating unit 11 performs an electroless plating process or the like on the wiring formed on the surface of the substrate W.

When the electroless plating process or the like is finished, the second substrate transfer mechanism 14 conveys the substrate W from the electroless plating unit 11 to the hot plate of the heating unit 12. The heating unit 12 performs a post-baking process on the board | substrate W, removes the organic substance contained in the plating (cap metal) by electroless plating, and improves the adhesiveness of plating etc. with wiring. When the post-baking process is complete | finished, the 2nd board | substrate conveyance mechanism 14 conveys the board | substrate W from the heating unit 12 to the cooling unit 13. The cooling unit 13 cools the board | substrate W again.

When the cooling process is completed, the second substrate transfer mechanism 14 transfers the substrate W to the delivery unit 10. Then, the 1st board | substrate conveyance mechanism 9 returns the board | substrate W mounted in the delivery unit 10 to 9 predetermined | prescribed place of the hoop F using 9 A of conveyance arms.

Next, the electroless plating unit 11 in the semiconductor manufacturing apparatus of this embodiment will be described in detail with reference to FIGS. 2 to 4. As shown in FIG. 2, the electroless plating unit 11 (hereinafter also referred to as "plating unit 11") includes an outer chamber 110, an inner chamber 120, a spin chuck 130, and a first The second fluid supply part 140, 150, the gas supply part 160, and the back plate 165 are provided.

The outer chamber 110 is a processing container disposed in the housing 100 to execute plating treatment. The outer chamber 110 is formed in the cylindrical shape surrounding the storage position of the board | substrate W, and is being fixed to the bottom face of the housing 100. The side surface of the outer chamber 110 is provided with a window 115 for carrying in and out of the substrate W, and is opened and closed by the shutter mechanism 116. Moreover, the shutter mechanism 119 for operation | movement of the 1st, 2nd fluid supply part 140 * 150 is formed in the side surface which faces the side in which the window 115 of the outer chamber 110 was formed so that opening and closing is possible. The gas supply unit 160 is installed on the upper surface of the outer chamber 110. The lower part of the outer chamber 110 is provided with the drain discharger 118 which discharges gas, a process liquid, etc.

The inner chamber 120 is a container that receives the processing liquid scattered from the substrate W, and is disposed inside the outer chamber 110. The inner chamber 120 is formed in a cylindrical shape at a position between the outer chamber 110 and the storage position of the substrate W, and includes a drain discharge device 124 for exhausting and draining. The inner chamber 120 can be raised and lowered inside the outer chamber 110 by using a lifting mechanism not shown, such as a gas cylinder, for example, and the end of the upper end 122 receives the substrate W. As shown in FIG. The lift is carried out between a position slightly higher than the position (process position) and a position lower than the position (treat position). The processing position is a position at the time of electroless plating to the substrate W, and the retreat position is a position at the time of carrying in and out of the substrate W or cleaning of the substrate W and the like.

The spin chuck 130 is a substrate fixing mechanism that holds the substrate W substantially horizontal. The spin chuck 130 is circumferentially spaced at the outer circumferential end of the rotating cylinder 131, the annular rotating plate 132 extending horizontally from the upper end of the rotating cylinder 131, and the rotating plate 132. It has the support pin 134a which supports the outer peripheral part of the board | substrate W provided, and similarly the several press pin 134b which presses the outer peripheral surface of the board | substrate W. As shown in FIG. As shown in FIG. 3, the supporting pins 134a and the pressing pins 134b are spaced apart from each other in the circumferential direction and are arranged, for example, three by one. The support pin 134a is a fixture which holds the board | substrate W and is fixed to a predetermined accommodating position, and the press pin 134b is a press mechanism which presses the board | substrate W downward. The motor 135 is provided in the side of the rotating cylinder 131, and the endless belt 136 is wound between the drive shaft of the motor 135 and the rotating cylinder 131. As shown in FIG. That is, the rotating cylinder 131 is comprised by the motor 135 to rotate. The support pin 134a and the pressing pin 134b rotate in the horizontal direction (surface direction of the substrate W), and the substrate W held by them also rotates in the horizontal direction.

The gas supply unit 160 supplies nitrogen gas or clean air into the outer chamber 110 to dry the substrate W. The supplied nitrogen gas or clean air is recovered through the drain discharger 118 or 124 provided at the lower end of the outer chamber 110.

The back plate 165 faces the lower surface of the substrate W held by the spin chuck 130, and is disposed between the holding position of the substrate W by the spin chuck 130 and the rotating plate 132. have. The back plate 165 incorporates a heater and is connected to a shaft 170 penetrating the shaft center of the rotating cylinder 131. In the back plate 165, a flow path 166 opening at a plurality of places on the surface thereof is formed, and the fluid supply path 171 passing through the flow path 166 and the shaft center of the shaft 170 communicates with each other. . The heat exchanger 175 is disposed in the fluid supply path 171. The heat exchanger 175 adjusts process fluids, such as pure water or dry gas, to predetermined temperature. That is, the back plate 165 functions to supply the temperature-regulated processing fluid toward the lower surface of the substrate W. As shown in FIG. An elevating mechanism 185 such as an air cylinder is connected to the lower end of the shaft 170 via the connecting member 180. In other words, the back plate 165 is configured to move up and down between the substrate W held by the spin chuck 130 and the rotation plate 132 by the lifting mechanism 185 and the shaft 170.

As shown in FIG. 3, the first and second fluid supply units 140 and 150 supply the processing liquid to the upper surface of the substrate W held by the spin chuck 130. The 1st and 2nd fluid supply parts 140 and 150 are provided with the fluid supply apparatus 200 which stores fluid, such as a process liquid, and the nozzle drive apparatus 205 which drives a supply nozzle. The 1st and 2nd fluid supply parts 140 and 150 are arrange | positioned so that the outer chamber 110 may be interposed inside the housing 100, respectively.

The first fluid supply unit 140 includes a first pipe 141 connected to the fluid supply device 200, a first arm 142 supporting the first pipe 141, and a first arm 142. A first swing drive mechanism 143 is provided on the base to pivot the first arm 142 around the base using a stepping motor or the like. The first fluid supply part 140 has a function of supplying a processing fluid such as an electroless plating treatment liquid. The first pipe 141 includes pipes 141a, 141b, and 141c for separately supplying three types of fluids, and is connected to the nozzles 144a, 144b, and 144c at the distal end of the first arm 142, respectively. have.

Similarly, the second fluid supply unit 150 includes a second pipe 151 connected to the fluid supply device 200, a second arm 152 supporting the second pipe 151, and a second arm 152. And a second swing drive mechanism 153 provided on the base of the head) to swing the second arm 152. The second pipe 151 is connected to the nozzle 154 at the tip end of the second arm 152. The second fluid supply part 150 has a function of supplying a processing fluid for processing the outer peripheral part (peripheral part) of the substrate W. As shown in FIG. The first and second arms 142 and 152 pivot above the substrate W held by the spin chuck 130 through a shutter mechanism 119 provided in the outer chamber 110.

Here, with reference to FIG. 4, the fluid supply apparatus 200 is demonstrated in detail. The fluid supply device 200 supplies a processing fluid to the first and second fluid supply units 140, 150. As shown in FIG. 4, the fluid supply device 200 includes a first tank 210, a second tank 220, a third tank 230, and a fourth tank 240.

The first tank 210 stores the pre-cleaning treatment liquid L ₁ used for the pretreatment of the electroless plating treatment of the substrate W. As shown in FIG. In addition, the second tank 220 stores the post-cleaning treatment liquid L ₂ used for the post-treatment of the electroless plating treatment of the substrate W. As shown in FIG. First and second tanks 210 and 220, each treatment liquid (L ₁ · L _2), the temperature control for adjusting a desired temperature of the device provided with a (not shown), a first pipe (141a) and The pipe 211 connected and the pipe 221 connected to the first pipe 141b are connected. Pipes (211 and 221), the respective pump (212 and 222) and is provided with a valve (213 and 223), and a treatment liquid adjusted to a predetermined temperature (L ₁ · L _2), each of the first pipe (141a ) Is configured to be supplied to the first pipe 141b. That is, by operating the pumps 212 and 222 and the valves 213 and 223, respectively, the treatment liquid L ₁ , L ₂ is passed through the nozzle 144a and the first pipe 141a and the first pipe 141b. It is sent to the nozzle 144b.

The third tank 230 stores the plating liquid L ₃ for processing the substrate W. As shown in FIG. In the third tank 230, a pipe 231 connected to the first pipe 141c is connected. The pipe 231 is provided with a pump 232, a valve 233, and a heater (for example, a heat exchanger) 234 for heating the plating liquid L ₃ . That is, the plating liquid L ₃ is temperature-controlled by the heater 234 and is sent to the nozzle 144c through the first pipe 141c by the cooperative operation of the pump 232 and the valve 233.

The fourth tank 240 stores the outer circumferential treatment liquid L ₄ used for the process of the outer circumferential portion of the substrate W. As shown in FIG. In the fourth tank 240, a pipe 241 connected to the second pipe 151 is connected. The pipe 241 is provided with a pump 242 and a valve 243. That is, the outer peripheral liquid L ₄ is sent to the nozzle 154 through the second pipe 151 by the cooperative operation of the pump 242 and the valve 243.

The fourth tank 240 is also connected to, for example, a pipe for supplying hydrofluoric acid, a pipe for supplying hydrogen peroxide water, and a pipe for supplying pure water (L ₀ ). That is, the fourth tank 240 also functions to mix and adjust these liquids at a predetermined ratio set in advance.

Further, pipes 265a and 265b for supplying pure water L ₀ are connected to the first pipe 141a and the first pipe 141b, and a valve 260a is installed in the pipe 265a. The valve 260b is provided at 265b. That is, the nozzles 144a and 144b may also supply pure water L ₀ .

1 to 7, the operation of the plating unit 11 in this embodiment will be described. FIG. 5 is a flowchart showing the operation of the plating unit 11 according to this embodiment, FIG. 6 is a view showing the flow of the process of the plating unit 11 according to this embodiment, and FIG. It is a figure which shows the flow of a process. As shown in Fig. 5, the plating unit 11 of this embodiment includes a pre-cleaning step ("A" in Fig.), A plating treatment step ("B" in Fig.), And a post-cleaning step ("C" in Fig.). , Five steps of a back surface and a cross-sectional cleaning step ("D" in the figure) and a drying step ("E" in the figure) are realized. In addition, as shown in FIG. 6, the plating unit 11 of this embodiment is the back surface pure water supply (a) which supplies the pure water heated to the back surface of the board | substrate, the cross-sectional cleaning (b) which wash | cleans the board | substrate cross section, and the board back surface. Back cleaning (c) for cleaning the substrate, post-cleaning (d) for cleaning the substrate following the plating treatment, plating treatment (e), pre-cleaning (f) for cleaning the substrate prior to the plating treatment, and hydrophilicity of the substrate. 7 process liquid supply processes of the pure water supply g are performed.

The 1st board | substrate conveyance mechanism 9 carries out the board | substrate W one by one from the hoop F of the carrying in / out part 1, and carries in the board | substrate W to the transfer unit 10 of the process part 2. When the board | substrate W is carried in, the 2nd board | substrate conveyance mechanism 14 conveys the board | substrate W to the heating unit 12 and the cooling unit 13, and the board | substrate W is given predetermined heat processing. When the heat treatment is completed, the second substrate transfer mechanism 14 carries the substrate W into the electroless plating unit 11.

The transfer arm 14A of the second substrate transfer mechanism 14 transfers the substrate W to the spin chuck 130 through the window 115. The spin chuck 130 holds the substrate W by the support pins 134a and the pressing pins 134b. When the board | substrate W is conveyed, the shutter mechanism 116 is closed and the outer chamber 110 will be in a process standby state.

First, the process controller 51 performs the pre-cleaning process A. FIG. The pre-cleaning step (A) includes a hydrophilic treatment, a pre-clean treatment, and a pure water treatment.

The process controller 51 drives the motor 135 to rotate the substrate W held by the spin chuck 130 (step 300. Hereinafter, referred to as "S300"). The spin chuck 130 is rotated, for example, about 100 to 500 rpm, preferably about 250 rpm.

When the spin chuck 130 rotates, the process controller 51 instructs the nozzle drive device 205 to drive the first fluid supply part 140. The nozzle drive device 205 operates the first swing drive mechanism 143 to move the first arm 142 to a predetermined position on the substrate W (for example, the nozzle 144a is positioned at the center of the substrate W). Position) (S301). In addition, the nozzle drive device 205 operates the second swing drive mechanism 153 to move the second arm 152 to the periphery on the substrate W. As shown in FIG. When each reaches a predetermined position, the process controller 51 instructs the fluid supply device 200 to hydrophilize. The fluid supply device 200 opens the valve 260a and sends a predetermined amount of pure water L ₀ to the nozzle 144a (supply process g in FIG. 6). At this time, the nozzle 144a is positioned at, for example, about 0.1 to 20 mm above the substrate W (S302). Similarly, the fluid supply device 200 opens the valve 243 and sends the processing liquid L ₄ to the nozzle 154. As the treatment liquid L ₄ in this treatment, one having a different hydrophilization effect in relation to the pure water L ₀ is used.

This hydrophilization treatment then prevents the pre-cleaning liquid from splashing on the surface of the substrate W, and also serves to prevent the plating liquid from easily falling off the surface of the substrate W. FIG. The supply rate of the pure water L ₀ is adjusted according to the hydrophobicity of the surface of the substrate W, and it is effective to set it to 0.5 to 2.0 [L / min]. In particular, an insulating film having a high hydrophobicity (for example, an organic low dielectric constant film such as SiOCH) is more preferably about 1.5 [L / min]. Since the rotation speed of the board | substrate W cannot hydrophilize suitably at the rotation speed of 1000 rpm or more, for example, it is effective to set it as the rotation speed of 100-500 rpm, for example. The processing time of this hydrophilization treatment is appropriately set according to the type of the substrate W, and can be, for example, about 5 to 30 seconds. The first fluid supply part 140 and the second fluid supply part 150 cooperate with each other to adjust hydrophilicity in the vicinity of the center of the substrate W and in the vicinity of the periphery thereof so that uniform plating treatment is performed on the entire substrate W. FIG. To do that. The position of each of the nozzle 144a and the nozzle 154 can be changed according to the conditions of a plating process, etc., and the magnitude of the hydrophilicity of each center part and the periphery of the board | substrate W can also be changed arbitrarily.

8A and 8B show the state of such hydrophilization treatment. FIG. 8A is a conceptual view of the first fluid supply unit 140 and the second fluid supply unit 150 in a side view, and FIG. 8B shows that the first fluid supply unit 140 supplies pure water L ₀ and the second fluid supply unit. 150 is a view showing a state of performing the hydrophilic treatment by feeding a treatment liquid (L _4). As shown in FIGS. 8A and 8B, the first arm 142 is disposed at an approximately center portion of the substrate W, the second arm 152 is disposed at the periphery of the substrate W, and pure water L ₀ is a nozzle. From 144a, the processing liquid L ₄ is supplied from the nozzle 154 to the substrate W surface. Here, as shown in FIG. 8A, the first fluid supply part 140 and the second fluid supply part 150 adjust the temperature of the pure water L ₀ , the processing liquid L ₄ , and the like. 155 and the pump mechanism 146 · 156 which delivers the pure water L ₀ , the processing liquid L ₄ , and the like to the nozzles 144a 154. The pump mechanism 146 · 156 not only delivers the pure water L ₀ , the processing liquid L ₄ , and the like to the nozzles 144a and 154, but also the pure water L ₀ and the nozzles 144a and 154 from the nozzles 144a and 154. It also has a function of sucking the processing liquid L ₄ . That is, after the predetermined amount of pure water (L ₀ ) or the like is supplied to the pump mechanism (146 156), the pure water (L ₀ ), the processing liquid (L ₄ ), and the like do not fall from the tip of the nozzles 144a, 154. It acts to re-suction the remaining pure water (L ₀ ), the treatment liquid (L ₄ ) and the like. By providing this structure, the nonuniformity of the fluid which arises on the board | substrate W can be prevented.

Subsequently, the process controller 51 instructs the fluid supply device 200 to perform pre-cleaning processing (supply process f in FIG. 6) and back warm pure water supply (supply process a in FIG. 6). The fluid supply device 200 closes the valve 260a to stop the supply of pure water L ₀ , and further closes the valve 243 to stop the supply of the processing liquid L ₄ , and the pump 212 and the valve ( The 213 is driven to supply the pre-cleaning treatment liquid L ₁ to the nozzle 144a (S303). Here, the nozzles (144a) are so state, go to the substantially central portion of the substrate (W), the nozzle (144a) is to supply a tablet charter treatment liquid (L ₁₎ to the substantially central portion of the substrate (W). Since the pre-cleaning treatment liquid uses an organic acid or the like, copper oxide can be removed from the copper wirings without causing galvanic corrosion, thereby increasing the nucleation density during the plating treatment. Since the supply speed of the pre-cleaning liquid L ₁ needs to replace pure water L ₀ adhered to the surface of the substrate W, it is preferable to set it to 0.5 to 2.0 [L / min]. Regarding the rotational speed of the substrate W, if it is too slow, the metal species to be removed cannot be removed from the surface of the substrate W. On the other hand, if the rotational speed of the substrate W is too fast, a dry spot is generated on the surface of the substrate W, so that the surface of the copper wiring may be oxidized. For this reason, it is preferable to set it as the rotation speed of about 100-500 rpm, for example. If the processing time of the pre-cleaning treatment is too long, the copper region is excessively dissolved, and therefore, for example, about 10 to 60 seconds is preferable.

Next, the fluid supply device 200 supplies pure water to the fluid supply path 171. The heat exchanger 175 temperature-controls the pure water sent to the fluid supply path 171, and supplies the pure water temperature-controlled to the lower surface of the substrate W through the flow path 166 provided on the back plate 165 ( S304). Thereby, the temperature of the board | substrate W is maintained at the temperature suitable for plating process. In addition, even if the supply of pure water to the fluid supply path 171 starts simultaneously with the above-mentioned step S300, the same effect can be acquired.

When the pre-cleaning process is completed, the process controller 51 instructs the fluid supply device 200 for pure water processing (supply process g in FIG. 6) (S305). The fluid supply device 200 operates the pump 212 and the valve 213 to stop the supply of the pre-cleaning treatment liquid L ₁ , and opens the valve 260a to supply a predetermined amount of pure water L ₀ . To the nozzle 144a. By supplying pure water L ₀ from the nozzle 144a, the pre-cleaning treatment liquid is replaced with pure water. This is to prevent the process defect from occurring by mixing the acidic pre-cleaning treatment liquid L ₁ and the alkaline plating treatment liquid. It is preferable to perform this pure water process continuously so that the board | substrate W may not dry so that the copper wiring on the board | substrate W may not oxidize. In the pure water treatment, it is preferable that the pure water supply amount is 0.5 to 2.0 [L / min], the rotation speed of the substrate W is 100 to 500 rpm, and the processing time is about 10 to 60 seconds.

Following the pre-cleaning step (A), the process controller 51 executes the plating process step (B). The plating treatment step (B) includes a plating liquid replacement treatment, a plating liquid accumulation treatment, a plating liquid treatment, and a pure water treatment. In FIG. 7, the process indicated by X corresponds to the plating liquid replacement process, the process indicated by Y corresponds to the plating liquid accumulation process, and the process indicated by Z corresponds to the plating liquid process.

The process controller 51 instructs the fluid supply device 200 and the nozzle drive device 205 to perform the plating liquid replacement process (the supply process (e) in FIG. 6). The fluid supply device 200 closes the valve 260a to stop the supply of pure water L ₀ (S310), and also operates the pump 232 and the valve 233 to operate the plating liquid L ₃ in the nozzle 144c. ) To be supplied (S311). On the other hand, the nozzle drive device 205 operates the first swing drive mechanism 143 to move the first arm 142 so that the nozzle 144c moves (scans) from the center portion to the peripheral portion portion to the center portion of the substrate W. It turns (S312). That is, as shown in FIG. 7, in plating liquid substitution process X, a plating liquid supply nozzle moves a center part-a peripheral part-a center part, and the board | substrate W rotates by comparatively high rotation speed. By this operation, the plating liquid L ₃ diffuses onto the substrate W, and the pure water on the surface of the substrate W can be quickly replaced with the plating liquid. Here, it is preferable that the rotation speed of the board | substrate W is about 100-300 rpm, and the rotational speed of the 1st arm 142 is a speed which the nozzle 144c moves about 150 [mm / sec]. At this time, the speed at which the nozzle 144c moves from the center part to the peripheral part may be different from the speed at which the nozzle 144c moves to the central part. This process can eliminate that the pure water on the board | substrate W remains. In particular, the first (a movement of a nozzle (144c)), the turning of the arm 142 and the plating solution by carrying out the supply of the (L ₃₎ at the same time, prevent a temperature drop of the coating liquid (L ₃₎ on a substrate (W), and further This makes it possible to increase the temperature raising efficiency of the entire substrate W.

When the plating liquid replacement process is completed, the process controller 51 decelerates the rotational speed of the substrate W held by the spin chuck 130 (S313) and supplies the fluid supply device 200 and the nozzle drive device 205. The plating liquid accumulation process is instructed. As for the rotational speed of the board | substrate W at this time, about 50-100 rpm is preferable. The fluid supply device 200 continues to supply the plating liquid L ₃ , the nozzle drive device 205 operates the first swing drive mechanism 143, and the nozzle 144c is circumferentially formed from the center of the substrate W. Slowly move toward wealth (S314). Sufficient amount of plating liquid L ₃ is accumulated on the surface of the substrate W subjected to the plating liquid substitution. That is, as shown in FIG. 7, in the plating liquid accumulation process, the plating liquid is continuously supplied while the nozzle moves from the center toward the peripheral portion. As a result, uniform plating treatment is realized in the entire area of the substrate W. FIG.

In addition, when the nozzle 144c is near the periphery of the substrate W, the process controller 51 further reduces the rotational speed of the substrate W (S315). In this step (for example, for about 1 to 2 seconds), the rotational speed of the substrate W is preferably about 5 to 20 rpm, which is equivalent to a normal plating process. This is to stably perform the plating treatment.

Subsequently, the process controller 51 instructs the fluid supply device 200 and the nozzle drive device 205 to perform a plating process. The nozzle drive device 205 operates the first swing drive mechanism 143 to pivot the first arm 142 such that the nozzle 144c is positioned approximately at a center portion of the substrate W and at a peripheral portion thereof. (S316). The position of the nozzle 144c is preferably, for example, about 30 to 100 mm from the center of the substrate W, more preferably about 30 to 70 mm, and a place separated in the radial direction. 9 shows the state of such a nozzle 144c. 9 is a conceptual view of the first fluid supply part 140 viewed from above. As shown in FIG. 9, the 1st arm 142 moves the nozzle 144c to the middle part of the center part and the periphery part of the board | substrate W (the position which distanced d from the center of the board | substrate W), and a plating liquid. (L ₃ ) is intermittently supplied onto the substrate (W). By this configuration and operation, the plating liquid is evenly spread over the entire surface of the substrate W. FIG.

Next, the fluid supply device 200 operates the pump 232 and the valve 233 to supply the plating liquid L ₃ to the nozzle 144c intermittently and intermittently (S317). That is, as shown in FIG. 7, a nozzle is arrange | positioned at a predetermined position, and a plating liquid is supplied intermittently and intermittently. A substrate (W) is so rotated, the plating (L _3), the plating solution can also be spread out evenly (L ₃₎ to the whole area of the substrate (W) supplied intermittently (intermittent). In addition, the process of said steps 311-317 may be performed repeatedly. After a predetermined time has elapsed after supplying the plating liquid L ₃ , the fluid supply device 200 stops the supply of the plating liquid L ₃ , and the process controller 51 supplies the warm pure water to the rear surface of the substrate W. FIG. The supply is stopped (S318). The supply amount of the plating liquid may be such that the plating liquid supplied to the surface of the substrate W does not dry, and may be, for example, about 100 to 400 [mL / min]. In addition, the rotation speed of the substrate W is preferably about 1 to 25 rpm in order to prevent drying due to uneven heating or centrifugal force. Supply time of the plating liquid (L ₃₎ is, may be determined as appropriate depending on the plating film thickness is generated. The intermittent degree of the plating liquid supply (ratio of supply on / off) may be long for supplying (on), or may be long for not supplying (off).

In addition, the process controller 51 instructs the fluid supply device 200 and the nozzle drive device 205 to perform pure water treatment (supply process g in FIG. 6). The process controller 51 increases the rotational speed of the substrate W held by the spin chuck 130 (S319), and the nozzle drive device 205 operates the first swing drive mechanism 143 to operate the nozzle ( The first arm 142 is pivoted such that 144c is positioned at the center of the substrate W (S320). Thereafter, the fluid supply device 200 opens the valve 260a to supply pure water L ₀ (S321). Accordingly, the plating liquid remaining on the surface of the substrate W may be removed to prevent mixing of the post-treatment liquid and the plating liquid. This process needs to be performed in the state which does not dry the board | substrate W so that copper wiring may not oxidize. As a supply amount of pure water, it is preferable to set it as 0.5-2.0 [L / min], for example, and the rotation speed of the board | substrate W is about 100-500 rpm, for example. Moreover, the processing time should just be removable from the surface of the board | substrate W, for example, can be made into about 10 to 60 second.

10A to 10D are diagrams showing a state of plating treatment on the surface of the substrate W. FIG. As shown in FIG. 10A, the substrate W has an insulating film I formed on its surface, a barrier metal V formed on the surface layer portion of the insulating film I, and a barrier metal V formed thereon. Copper (Cu) wiring formed in the surface layer is formed. In the plating unit 11 of this embodiment, the plating liquid is supplied while the substrate W is rotated and the nozzle 144c is positioned approximately in the middle of the center portion and the peripheral portion of the substrate W. L ₃ ) is supplied to flow through the surface of the substrate W (FIG. 10B). As the plating process proceeds, the cap metal CM is formed on the surface of the copper (Cu) wiring. In addition, the reaction byproduct BP is generated on the surface of the substrate W (FIG. 10C). Further, continuously to the outer side of the plating liquid (L ₃₎ old plating liquid (L ₃₎ of the substrate (W) comprising a reaction by-product (BP) by the plating reaction on the surface of the substrate (W) by the flow of the Discharged. Therefore, it is possible to grow a substrate (W) does not stay the reaction by-product (BP) to a surface always new plating liquid (L ₃₎ in the cap metal (plating film) (Fig. 10d).

Following the plating treatment step (B), the process controller 51 executes the post-cleaning step (C). The post-cleaning process (C) includes the chemical liquid treatment and the pure water treatment.

The process controller 51 instructs the fluid supply device 200 to process the chemical liquid solution (supply process d in FIG. 6). The fluid supply device 200 closes the valve 260a to stop the supply of pure water L _{0, and} operates the pump 222 and the valve 223 to discharge the post-cleaning treatment liquid L ₂ from the nozzle ( 144b) (S330). The post-cleaning treatment liquid L ₂ functions to remove residues on the surface of the substrate W or plating films deposited abnormally. Since the supply amount of the post-cleaning treatment liquid L ₂ may be such that the surface does not dry, it can be, for example, about 0.5 to 2.0 [L / min]. In addition, the number of revolutions of the substrate (W) is, without drying the surface of the substrate (W), also because there is then necessary to sufficiently spread to the surface of the cleaning process liquid (L ₂₎ of the substrate (W), for example from 100 to It is preferable to set it as about 500 rpm.

Subsequently to the chemical liquid treatment, the process controller 51 instructs the fluid supply device 200 to perform pure water treatment (supply process g in FIG. 6). The fluid supply device 200 operates the pump 222 and the valve 223 to stop the supply of the post-cleaning treatment liquid L ₂ , and opens the valve 260b to supply pure water L ₀ . (S331). As a supply amount of pure water, it is preferable to set it as 0.5-2.0 [L / min], for example, and the rotation speed of the board | substrate W is about 100-500 rpm, for example. In addition, the processing time should just be removable from the surface of the board | substrate W, for example, can be made into about 10 to 60 second.

Following the post-cleaning step (C), the process controller 51 performs the back surface and the end surface cleaning step (D). The back surface and end surface washing process (D) includes the liquid removal process, the back surface washing process, and the end surface washing process.

The process controller 51 instructs the fluid supply apparatus 200 to remove the liquid. The fluid supply device 200 closes the valve 260b to stop the supply of pure water L ₀ , and the process controller 51 increases the rotational speed of the substrate W held by the spin chuck 130. (S340). This process aims at drying the back surface of the board | substrate W, and removing the liquid on the surface of the board | substrate W. FIG. The rotational speed of the substrate W is rotated at a high speed, for example, about 800 to 1000 rpm. Since the surface of the board | substrate W has hydrophilicity, it is preferable to set processing time into about 10 to 30 second.

When the liquid removal process is completed, the process controller 51 instructs the fluid supply device 200 to clean the back surface. First, the process controller 51 first decelerates the rotational speed of the substrate W held by the spin chuck 130 (S341). At this time, the rotational speed is set at a relatively low speed of, for example, about 5 to 20 rpm, in order to prevent the processing liquid from being bounced back. Next, the fluid supply device 200 supplies pure water to the fluid supply path 171 (the supply process (a) in FIG. 6). The heat exchanger 175 temperature-controls the pure water sent to the fluid supply path 171, and supplies the pure water temperature-controlled to the back surface of the substrate W through a flow path installed in the back plate 165 (S342). Pure water acts to hydrophilize the back surface side of the substrate W. As shown in FIG. Next, the fluid supply device 200 stops the pure water supply to the fluid supply path 171, and instead supplies the back surface cleaning liquid to the fluid supply path 171 (S343). The back surface cleaning liquid functions to clean and remove the residue on the back surface side of the substrate W in the plating process (supply step (c) in FIG. 6).

Thereafter, the process controller 51 instructs the fluid supply device 200 and the nozzle drive device 205 to perform a cross-sectional cleaning process. The fluid supply device 200 stops the supply of the back surface cleaning liquid to the back surface of the substrate W, and instead supplies the pure water temperature controlled by the heat exchanger 175 to the fluid supply path 171 (S344). At this time, it is preferable to keep the rotation speed of the substrate W at a relatively low 5 to 20 rpm and to prevent the reflow (feeding process (a) in FIG. 6).

Subsequently, the nozzle drive device 205 operates the second swing drive mechanism 153 to pivot the second arm 152 so that the nozzle 154 is located at the end of the substrate W, and the process The controller 51 speeds up the rotation speed of the board | substrate W about 150-300 rpm (S345). Similarly, the nozzle drive device 205 operates the first swing drive mechanism 143 to pivot the first arm 142 such that the nozzle 144b is positioned at the center of the substrate W. As shown in FIG. The fluid supply device 200 opens the valve 260b to supply pure water L ₀ to the nozzle 144b, and also operates the pump 242 and the nozzle 243 to operate the outer peripheral treatment liquid L ₄ . Supply to the nozzle 154 (feed process a * g in FIG. 6). That is, in this state, the pure water L ₀ and the outer peripheral portion processing liquid L ₄ are similarly supplied to the center portion of the substrate W, and the pure water temperature-controlled to the rear surface of the substrate W is supplied (S346). ).

11A and 11B show the state of this end face cleaning process. FIG. 11A is a conceptual view of the first and second fluid supply parts 140 and 150 as viewed from the top, and FIG. 11B is a diagram showing that the first and second fluid supply parts 140 and 150 are pure water L ₀ and the outer peripheral part processing liquid L. FIG. _It is a figure which shows the state which supplies ₄ ) and performs a cross-sectional washing process. As shown in FIGS. 11A and 11B, the first arm 142 moves so that the nozzle 144b is positioned at the center of the substrate W, and the second arm 152 moves the nozzle 154 to the substrate W. FIG. Move to the periphery of. The pure water L ₀ and the outer peripheral liquid L ₄ are supplied from the nozzle 144b and the nozzle 154 to the surface of the substrate W, respectively. By this structure and operation | movement, it becomes possible to remove the residue which remained on the surface and end surface of the board | substrate W. As shown in FIG. As the outer peripheral treatment liquid L ₄ in this end face cleaning treatment, for example, hydrofluoric acid or the like can be used.

Subsequent to the back surface and end surface cleaning process (D), the process controller 51 performs a drying process (E). The drying step (E) includes a drying treatment.

The process controller 51 instructs the fluid supply device 200 and the nozzle drive device 205 to dry. The fluid supply device 200 stops supplying all processing liquids (S350), and the nozzle drive device 205 retracts the first arm 142 and the second arm 152 from above the substrate W. . In addition, the process controller 51 increases the rotational speed of the substrate W to about 800 to 1000 rpm to dry the substrate W (S351). As for time for drying, about 10 to 30 second is preferable, for example. When the drying process is finished, the process controller 51 stops the rotation of the substrate W (S352).

When the plating treatment step is completed, the transfer arm 14A of the second substrate transfer mechanism 14 takes the substrate W out of the spin chuck 130 through the window 115.

According to the plating liquid unit 11 of this embodiment, in the plating treatment step (B), the plating liquid supply nozzle was supplied while the plating liquid supply nozzle was moved on the substrate W by the plating liquid replacement process, thereby preventing the temperature of the plating liquid from dropping. Liquid nonuniformity on (W) can be suppressed. Further, according to the plating liquid unit 11 of this embodiment, since the plating liquid is intermittently supplied (intermittent supply) with the plating liquid nozzle at a position between the center portion and the end portion of the substrate W, the amount of the plating liquid supply is suppressed. The plating liquid can be supplied evenly to the surface.

Here, a modification of the nozzle 144 in the semiconductor manufacturing apparatus of this embodiment will be described. 12A and 12B show a modification of the first fluid supply part 140 of this embodiment, and FIG. 12C is a view showing a state of plating treatment according to a modification of the first fluid supply part 140. . As shown in FIG. 12A, in this modification, the nozzles 144a / 144b / 144c of the first fluid supply part 140 face the direction of the nozzle inclination angle θ from the direction of the processing target surface of the substrate W. As shown in FIG. It is replaced by the nozzles 144d / 144e / 144f. According to this modification, since the nozzle for supplying the plating liquid L ₃ and the like is inclined with respect to the processing surface of the substrate W at a predetermined nozzle inclination angle θ, the squeezing of the plating liquid L ₃ is suppressed. The plating liquid L ₃ can be supplied to the substrate W more uniformly.

In addition, the nozzles 144a / 144b / 144c (or the nozzles 144d / 144e / 144f) of the first fluid supply unit 140 need not be the center of the substrate W. In the semiconductor manufacturing apparatus of this embodiment, the plating liquid is supplied onto the substrate W while the substrate W is rotated. For this reason, as shown in FIG. 12B, it is also possible to separate the nozzle 144 by the distance d from the center of a board | substrate to the periphery direction from a viewpoint of saving the plating liquid to be used, or restraining the liquid drop due to plating liquid supply. That is, as shown in FIG. 12C, the plating liquid can be more evenly supplied onto the substrate W due to the synergistic effect with the rotation of the substrate W. FIG.

Next, with reference to FIGS. 13-15, the operation example of the plating liquid unit 11 which concerns on this embodiment is demonstrated. FIG. 13 is a diagram showing the relationship between the discharge interval of the plating treatment liquid and the thickness of the plating treatment film in the plating treatment step (B) described above. FIG. 14 is similarly the relationship between the nozzle inclination angle of the nozzle 144c and the thickness of the plating treatment film. FIG. 15 is a diagram showing a relationship between the discharge position of the plating liquid by the nozzle 144c and the thickness of the plating film.

In the example shown in FIG. 13, the inclination angle of the nozzle 144c was set to 60 degrees using a 300 mm semiconductor wafer as the substrate W. As shown in FIG. At this time, the position of the nozzle 144c was made into the substantially intermediate position of the center part and the peripheral part of the board | substrate W above the board | substrate W. In this state, the plating process of the plating process (B) was performed, and the thickness of the plating process film on the board | substrate W was measured. For comparison, the discharge interval (supply interval) of the plating liquid L ₃ from the nozzle 144c is not supplied 9 (1: 9) with respect to the plating liquid supply 1, and similarly is not supplied 7 (3: 7 with respect to the supply 3). Similarly, it was set as the non-supply (10:10, continuous supply) with respect to supply 10.

As a result, as shown in Fig. 13, the correlation between the discharge interval of the plating liquid and the film thickness of the plating film was not recognized. This means that even if the plating liquid is intermittently supplied without being continuously supplied, there is no problem in the uniformity of the film thickness. That is, by supplying a plating liquid intermittently, it becomes possible to save the plating liquid supply amount.

In addition, in the example shown in FIG. 14, using the 300-mm semiconductor wafer as the board | substrate W, the position of the nozzle 144c is made into the substantially intermediate position of the center part and the peripheral part of the board | substrate W from the board | substrate W upper side. In the three cases in which the nozzle inclination angles of the nozzle 144c were 45 degrees, 60 degrees, and 90 degrees, the relationship between the nozzle inclination angle and the thickness of the plating film was examined. Here, the inclination angle is the inclination angle θ of the nozzle with respect to the substrate W processing surface as shown in FIG. 10A.

As a result, the tendency for the film thickness of the periphery of the board | substrate W to become thick in the case of inclination angle 90 degree and 45 degree was recognized. Particularly, in the case of an inclination angle of 90 degrees (supplying the plating liquid perpendicularly to the substrate W), a uniform film thickness was obtained from the center of the substrate W to 50 mm, but when the peripheral portion exceeded 50 mm, the film thickness was increased. The result is a sharp thickening. This is considered to be because the plating liquid is not discharged smoothly from the substrate W due to the liquid accumulation effect on the outer peripheral portion of the substrate W, and as a result of the reaction by-products accumulating on the outer peripheral portion, the film thickness of the portion becomes thick. Therefore, it is preferable that the nozzle inclination angle has a certain range of angles with respect to the substrate W processing surface. In addition, when the inclination angle is 45 degrees, the plating liquid supplied from the nozzle 144c is not sufficiently diffused on the substrate W, and it is considered that the film thickness of a part of the outer peripheral portion of the substrate W becomes thick. From these tendencies, the inclination angle of the nozzle 144c is preferably 45 degrees or more with respect to the substrate, more preferably about 60 degrees (about 50 to 70 degrees when the error is ± 10 degrees).

In the example illustrated in FIG. 15, the inclination angle of the nozzle 144c is 45 degrees using a 300 mm semiconductor wafer as the substrate W, and the position of the nozzle 144c is 30 mm from the center of the substrate W. In three cases of 50 mm and 110 mm, the relationship between the position of the nozzle and the thickness of the plating film was examined. The supply position of the plating treatment liquid, that is, the position of the nozzle, is the position of the distance d from the center of the substrate W shown in Fig. 12C. Injection of the plating liquid was performed in the direction of rotation of the substrate W. As shown in FIG.

As a result, in the case where the plating liquid discharge position of the nozzle 144c is set at a position separated by 110 mm from the center of the substrate W, a large difference in the film thickness of the plating film between the center portion of the substrate W and the peripheral portion (the central portion is This film thickness is thick). Since the effect of the liquid accumulation process in the periphery of the board | substrate W was inhibited, and the plating liquid spread | diffused to the inner peripheral part of the board | substrate W was dried, it is thought that the plating liquid of the inner peripheral part was overlapped | coated, and the film thickness became thick. Further, when the plating liquid discharge position of the nozzle 144c is set to a position separated by 30 mm from the center of the substrate W, it is small, but the film thickness is different between the center portion and the peripheral portion of the substrate W (the peripheral portion is the film thickness). Thick). On the other hand, when the plating liquid discharge position of the nozzle 144c was made into the position spaced 50 mm from the center of the board | substrate W, the substantially uniform film thickness was obtained. In this regard, the position of the nozzle 144c at the time of performing the plating process is excessively close to the center portion on the substrate W or excessively close to the peripheral edge. It is understood that it is preferable. Specifically, the distance d is preferably 30 to 110 mm, and more preferably the distance d is about 50 mm (an error ± 20 mm, about 30 to 70 mm).

The nozzle inclination angle described here affects the maintenance of the temperature of the plating liquid supplied to the substrate W and actually contributed to the reaction, and the freshness of the plating liquid supplied to the substrate W. In the plating treatment process, when the plating liquid is supplied from the nozzle to reach the surface of the substrate W and reacts, it is preferable that the plating liquid be at a temperature of a predetermined condition, and maintaining this temperature is a major problem. Since the inclination of the nozzle in this embodiment prevents the plating liquid from staying on the substrate W, it is possible to maintain the plating liquid temperature on the surface of the substrate W at an appropriate temperature. In addition, by suppressing the plating liquid from remaining on the surface of the substrate W, the old plating liquid which has contributed to the reaction on the substrate W is prevented from being accumulated, and a new plating liquid always contributes to the plating treatment on the substrate W. It becomes possible.

Similarly, the intermittent ratio of the plating liquid supply also affects the maintenance of the temperature of the plating liquid supplied to the substrate W and actually contributed to the reaction, and the freshness of the plating liquid supplied to the substrate W. Similarly to the operation of the plating process of the nozzle inclination angle, compared with the case of continuously supplying the plating liquid, the intermittent supply makes it possible to prevent the plating liquid from remaining on the surface of the substrate W, and to maintain the plating liquid temperature and the plating liquid. The effect can be expected to refresh.

Next, a semiconductor manufacturing apparatus according to another embodiment of the present invention will be described with reference to FIGS. 16A to 16C. 16A is a cross-sectional view of the electroless plating unit of the semiconductor manufacturing apparatus according to this embodiment, and FIGS. 16B and 16C are views showing the state of plating treatment by the electroless plating unit according to this embodiment. The semiconductor manufacturing apparatus according to this embodiment has the same configuration as the semiconductor manufacturing apparatus according to the embodiments shown in FIGS. 1 to 3, and the plating liquid L ₃ is not the first fluid supply unit 140 but the shaft ( The point supplied through the fluid supply path 171 installed in 170 is different. Here, the components common to those shown in Figs. 1 to 3 are denoted by the same reference numerals, and redundant descriptions are omitted. This embodiment is an example in which a so-called face down method is applied in which a plating process is applied to the lower surface of the substrate W. FIG.

As shown in FIG. 16A, the electroless plating unit 410 of this embodiment includes a first fluid supply part 440 and a back plate 465. The first fluid supply unit 440 supplies a processing liquid, pure water, or the like to the upper surface of the substrate W held by the spin chuck 130. The back plate 465 faces the lower surface of the substrate W held by the spin chuck 130, and is disposed between the holding position of the substrate W by the spin chuck 130 and the rotating plate 132. have. In this embodiment, the spin chuck 130 holds the substrate W by facing the surface to be processed of the substrate W against the back plate 465.

In the back plate 465, a flow path 466 opening at a plurality of locations on the surface thereof is formed, and the fluid supply path 471 communicating with the flow path 466 and the shaft center of the shaft 470 communicates with each other. . A heat exchanger (not shown) is disposed in the fluid supply path 471 to adjust processing fluid such as a plating liquid to a predetermined temperature. That is, the back plate 165 functions to supply the temperature-regulated processing fluid toward the lower surface of the substrate W. As shown in FIG. In the plating process, the fluid supply apparatus 200 passes the pretreatment liquid L ₁ , the post-treatment liquid L ₂ , and the plating liquid L ₃ through the fluid supply passage 471. The lower surface). On the other hand, the pure water L ₀ for adjusting the temperature of the substrate W is supplied to the upper surface of the substrate W by the first fluid supply part 440.

In the plating treatment step in this embodiment, the fluid supply passage 471 uses pure water (L ₀ ), pre-cleaning liquid (L ₁ ), post-cleaning liquid (L ₂ ), and plating liquid (L ₃ ) to the substrate (W). And the first fluid supply 440 supplies the temperature-controlled pure water L ₀ to the upper surface of the substrate W, and is substantially similar to the process of the first embodiment shown in FIG. 5. do. That is, only the point where the object of plating process is the lower surface of the board | substrate W is different. The back plate 465 is raised when the pre-cleaning liquid L ₁ , the post-cleaning liquid L ₂ , and the plating liquid L ₃ are supplied to the lower surface of the substrate W to approach the substrate W. Shall be. That is, these processing fluids flow the gap between the substrate W and the back plate 465 toward the periphery of the substrate W. As shown in FIG. According to the semiconductor manufacturing apparatus of this embodiment, since the substrate W is processed by flowing a processing liquid such as a plating liquid between the back plate 465 and the substrate W nearing the substrate W, the amount of the plating liquid and the like used. Can save.

Here, the back plate 465 of the electroless plating unit 410 of this embodiment will be described in detail. As shown in Figs. 16B and 16C, the back plate 465 of this embodiment is designed such that the wettability of the processing fluid such as the plating liquid on the surface thereof is different at the central portion and the peripheral portion. That is, the peripheral part (alpha) of the backplate 465 is comprised so that the wettability with respect to a process fluid may become lower than the center part (beta).

In general, when the wettability of the surface of the plate, such as the backplate 465, to the processing fluid is low, the surface tension of the processing fluid on the surface of the plate tends to act strongly, and when the wettability is high, the processing fluid It is known that there is a property to easily flow through the surface of the plate. In the back plate 465 of this embodiment, the wettability of the processing fluid relative to the periphery of the plate is lower than that of the central part. Therefore, at the periphery of the plate, the force is applied in the direction in which the processing fluid is trapped toward the center of the plate due to the surface tension of the processing fluid. Works. In addition, a force acts in the direction of the plate in the center of the plate to diffuse on the surface. That is, since a force acts in the direction of the arrow shown in FIG. 16B and FIG. 16C, a process fluid spreads evenly in the surface of the backplay 465, and it becomes possible to wet the whole surface of the board | substrate W uniformly. Thereby, the plating process on the board | substrate W can be made more uniform.

In addition, this invention is not limited to the said Example as it is, In an implementation step, it can embody by changing a component in the range which does not deviate from the summary. Moreover, various inventions can be formed by appropriate combination of the some component disclosed by the said Example. For example, some components may be deleted from all the components shown in the embodiments. Moreover, you may combine suitably the components over different embodiments.

For example, as a means of making the wettability of the backplate surface different at the center and the periphery, the backplate may be stepped to regulate the force exerted on the processing fluid by the backplate surface. 17A and 17B show an example of such a back plate. As shown in Figs. 17A and 17B, the step α ＇or step β＇ may be provided on the back plate surface, and the resistance, i.e., the wettability, to the treatment fluid of each of the center and the periphery of the back plate surface may be adjusted.

Similarly, the technical idea that the wettability of the surface of the back plate shown in FIGS. 16B and 16C is different at the center and the periphery may be applied to the embodiments shown in FIGS. 1 to 3. As described above, in the pre-cleaning step (A), the nozzle 144a of the first fluid supply part 140 is moved to the center of the substrate W, and the nozzle 154 of the second fluid supply part 150 is moved to the substrate. Transfer to the periphery of the (W), and supplies each of the pure (L ₀₎ and the outer peripheral portion processing solution (L _4). At this time, by appropriately adjusting the outer periphery treatment liquid L ₄ , the wettability can be made different between the central portion and the peripheral portion of the substrate W. FIG. By this treatment, in the plating treatment step (B) following the pre-cleaning step (A), the plating liquid can be uniformly stacked on the substrate W. FIG.

The present invention can be applied to a semiconductor manufacturing industry.

1 is a plan view showing the configuration of a semiconductor manufacturing apparatus of one embodiment according to the present invention.

2 is a cross-sectional view showing an electroless plating unit in the semiconductor manufacturing apparatus of this embodiment.

3 is a plan view showing an electroless plating unit in the semiconductor manufacturing apparatus of this embodiment.

4 is a diagram showing the configuration of a fluid supply device in the semiconductor device of this embodiment.

5 is a flowchart showing the operation of the plating unit of this embodiment.

6 is a view showing a flow of a process of a plating unit according to this embodiment.

7 is a view showing a flow of a process of plating liquid treatment of a plating unit according to this embodiment.

8A is a conceptual view of the first fluid supply viewed from the side.

8B is a view showing a state in which the first fluid supply unit supplies pure water to perform a hydrophilization treatment.

9 is a conceptual view of the first fluid supply unit viewed from above.

It is a figure which shows the state of the plating process of the board | substrate surface.

It is a figure which shows the state of the plating process of the board | substrate surface.

It is a figure which shows the state of the plating process of the board | substrate surface.

It is a figure which shows the state of the plating process of the substrate surface.

11A is a conceptual view of the first and second fluid supply units viewed from an upper surface thereof.

It is a conceptual view which looked at the 1st, 2nd fluid supply part from the side.

12A is a view showing a modification of the first fluid supply part.

12B is a view showing a modification of the first fluid supply part.

It is a figure which shows the state of the plating process by the modification of a 1st fluid supply part.

It is a figure which shows the relationship between the discharge interval of the plating process liquid and the thickness of a plating process film in a plating process.

14 is a diagram showing a relationship between the inclination angle of the nozzle and the thickness of the plating film.

15 is a diagram showing a relationship between the discharge position of the plating liquid by the nozzle and the thickness of the plating film.

16A is a cross-sectional view illustrating a configuration of an electroless plating unit of a semiconductor device of another embodiment.

Fig. 16B is a diagram showing the state of plating treatment by the electroless plating unit of this embodiment.

FIG. 16C is a diagram showing a state of plating treatment by the electroless plating unit of this embodiment.

17A is a view showing a modification of the back plate in the electroless plating unit of this embodiment.

17B is a view showing a modification of the back plate in the electroless plating unit of this embodiment.

Explanation of symbols on the main parts of the drawings

1: Import / Export

2: processing unit

3: conveying part

5: control device

11: electroless plating unit

51: process controller

110: outer chamber

120: inner chamber

130: spin chuck

132: rotating plate

134a: support pin

134b: pressing pin

140: first fluid supply

142: first arm

143: first turning drive mechanism

144a, 144b, 144c: nozzles

150: second fluid supply portion

152: second arm

153: second swing drive mechanism

154: nozzle

160: gas supply unit

165: backplate

166: Euro

170: shaft

171: fluid supply passage

175: heat exchanger

200: fluid supply device

205: nozzle driving device

Claims (22)

A holding mechanism for holding the substrate rotatably; A nozzle for supplying a processing liquid for performing plating treatment on the surface to be processed on the substrate; A substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the surface to be processed; A nozzle moving mechanism for moving the nozzle in a direction along the surface to be processed at a position opposed to the surface to be processed on the substrate held by the holding mechanism; Control unit for controlling the supply of the processing liquid by the nozzle and the movement operation of the nozzle by the nozzle moving mechanism The semiconductor manufacturing apparatus characterized by the above-mentioned. The method of claim 1, The control unit, First control for continuously supplying the processing liquid from the nozzle while moving the nozzle between the central portion and the peripheral portion of the substrate; Second control to stop the nozzle at a predetermined position and supply the processing liquid from the nozzle; The semiconductor manufacturing apparatus characterized by the above-mentioned. The method of claim 2, The second control by the control unit supplies the processing liquid continuously or intermittently from the nozzle. The method of claim 2, 2nd control by the said control part supplies the said process liquid intermittently from the said nozzle, The semiconductor manufacturing apparatus characterized by the above-mentioned. The method of claim 4, wherein The semiconductor manufacturing apparatus according to claim 2, wherein the supply of the processing liquid from the nozzle by the second control is longer than the period during which the processing liquid is not supplied. The method of claim 4, wherein The semiconductor manufacturing apparatus according to claim 2, wherein the supply of the processing liquid from the nozzle by the second control is longer in a period in which there is no supply than in a period in which the processing liquid is supplied. The method of claim 2, In the second control, the nozzle is stopped at a position approximately at the center of the substrate to supply the processing liquid. The method of claim 2, And the second control stops the nozzle at a position separated by approximately 30 to 110 mm from an approximately center of the substrate, and supplies the processing liquid. The method of claim 2, And the second control stops the nozzle at a position separated by approximately 30 to 70 mm from an approximately center of the substrate to supply the processing liquid. The method of claim 2, The nozzle is a semiconductor manufacturing apparatus, characterized in that for supplying the processing liquid having an inclination angle of 45 to 90 degrees from the surface to be processed of the substrate. The method of claim 2, The nozzle is a semiconductor manufacturing apparatus, characterized in that for supplying the processing liquid having an inclination angle of 50 to 70 degrees from the surface to be processed of the substrate. A first cleaning step of cleaning the surface to be processed of the substrate, The plating liquid is continuously applied to the surface to be processed through the nozzle while moving the nozzle between a position facing the central portion of the surface to be treated on the substrate cleaned in the first cleaning process and a position facing the peripheral portion of the surface to be treated. A first plating liquid supplying step of supplying, A second plating liquid supplying step of intermittently supplying the plating liquid to the processing target surface through the nozzle in a state where the nozzle is stopped at a predetermined position facing the processing surface on the substrate that has passed through the first plating liquid supplying process; , A second cleaning step of cleaning the surface to be processed on the substrate that has passed through the first and second plating liquid supplying steps Semiconductor manufacturing method having a. The method of claim 12, The movement of the nozzle by the first plating liquid supplying process includes a first movement at a first speed between a position facing a central portion of the target surface on the substrate and a position facing a peripheral portion of the target surface, And a second movement at a second speed slower than the first speed. The method of claim 13, The movement of the nozzle by the first plating liquid supplying step includes the first movement at least twice or more. The method of claim 13 The first movement is a movement at a third speed from a position opposite the central portion of the target surface on the substrate to a position opposite the peripheral portion of the target surface, and from the position opposite the peripheral portion of the target surface. And moving at a fourth speed faster than said third speed to a position opposed to a central portion of the back surface. The method of claim 12, The intermittent supply of the plating liquid by the second plating liquid supplying process has a longer supply period than a period without supply of the plating liquid. The method of claim 12, The intermittent supply of the plating liquid by the second plating liquid supplying step has a longer period of no supply than a period of supply of the plating liquid. The method of claim 12, Intermittent supply of the said plating liquid by a said 2nd plating liquid supply process is performed in the state which stopped the said nozzle to the position of the substantially center of the said board | substrate. The semiconductor manufacturing method characterized by the above-mentioned. The method of claim 12, Intermittent supply of the said plating liquid by a said 2nd plating liquid supply process is performed by stopping the said nozzle in the position which separated 30-110 mm from the substantially center of the said board | substrate. The method of claim 12, Intermittent supply of the said plating liquid by a said 2nd plating liquid supply process is performed by stopping the said nozzle in the position which separated 30-70 mm from the substantially center of the said board | substrate. The method of claim 12, The nozzle is a semiconductor manufacturing method, characterized in that for supplying the plating liquid having an inclination angle of 45 to 90 degrees from the surface to be processed of the substrate. The method of claim 12, The nozzle is a semiconductor manufacturing method, characterized in that for supplying the plating liquid with an inclination angle of 50 to 70 degrees from the surface to be processed of the substrate.

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