KR20090106178A - Substrate processing appratus and method for treating subtrate - Google Patents

Abstract

PURPOSE: An apparatus for treating a substrate is provided to etch an edge region of a substrate inside a process chamber by moving an edge etching unit to the process chamber. CONSTITUTION: An apparatus for treating a substrate includes a first chamber(100), a second chamber(200), and an edge etching unit(210). The first chamber includes a space for treating a substrate(10). The second chamber is connected to a side surface of the first chamber. The edge etching unit is positioned inside the second chamber, and is moved inside the first chamber by movement of the second chamber or movement of the edge etching unit.

Description

Substrate processing appratus and method for treating subtrate}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, a substrate processing apparatus for performing a process of depositing a film on a substrate or etching a film on the substrate and an etching of an edge region of the substrate in the same substrate processing apparatus. And a substrate processing method.

In general, in order to fabricate a semiconductor device, a process of depositing a film on a substrate and etching the same is alternately performed a plurality of times. In this case, when the film is deposited on the substrate in the deposition apparatus, an unwanted film may be deposited on the substrate edge region. In addition, even when etching the film on the substrate in the etching apparatus, a problem that the particles are adsorbed to the substrate edge region occurs.

Therefore, an edge region of the substrate on which deposition or etching is completed must be etched using a separate edge etching unit. However, conventional edge etching devices exist independently of the deposition apparatus and the etching apparatus. Thus, the substrate must be exposed to the atmosphere in order to transfer the finished substrate in the deposition apparatus or the etching apparatus to the edge etching apparatus. As a result, the particles present in the atmosphere adhere to the substrate and act as a cause of the defect of the elements formed on the substrate. In addition, since the substrate edge is etched using a separate device after the substrate deposition process and the etching process are finished, the entire process becomes complicated and the overall process time increases.

In order to solve the above problem, the edge etching unit may be etched in the process chamber without exposing the substrate to the atmosphere by moving the edge etching unit into the process chamber in which the film is deposited or etched on the substrate. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method.

The substrate processing apparatus according to the present invention includes a first chamber having a space for processing a substrate, a second chamber connected to the side of the first chamber, and an edge etching unit located in the second chamber.

The edge etching unit may enter and exit the first chamber by the movement of the second chamber or the movement of the edge etching unit itself.

And a driving unit connected to any one of the second chamber and the edge etching unit to move the edge etching unit into the first chamber.

And a bellows disposed to surround any one of the second chamber and the driving unit to seal the first chamber.

The first chamber includes a substrate support part for placing the substrate so as to expose an edge region of the substrate, and a gas injection part for injecting gas into the upper surface of the substrate seated on the substrate support part.

The gas injector may move up and down to be adjacent to an upper surface of the substrate placed in the substrate support, and may be manufactured to expose an edge region of the substrate.

The edge etching unit includes an upper electrode and a lower electrode spaced apart from each other, and an etching gas supply unit supplying an etching gas to a space between the upper electrode and the lower electrode.

The apparatus may further include a plasma power supply for supplying plasma power to the substrate support.

The apparatus may further include a plasma power supply unit supplying plasma power to any one of the upper electrode and the lower electrode.

The edge etching unit includes first and second protrusions spaced apart from each other to provide a plasma formation space, and a connection part connecting the first and second protrusions, and the upper electrode and the lower electrode are connected to each of the protrusions. The support may be further included.

It is effective that the etch gas supply is arranged to penetrate the connection of the support.

The etching gas supply unit is effectively disposed to penetrate the upper electrode and the lower electrode connected to each protrusion of the support.

It is effective that an etching gas supply unit is disposed immediately before or immediately after the upper electrode and the lower electrode connected to each protrusion of the support.

The edge etching unit may further include a gas flow member to allow the etching gas supplied from the etching gas supply unit to move into the space between the upper electrode and the lower electrode.

The substrate processing method according to the present invention comprises the steps of performing a substrate processing process in a first chamber, and after finishing the substrate processing process in the first chamber, moving an edge etching unit to move an edge of the substrate in the edge etching unit. Positioning the region, rotating the substrate support on which the substrate is placed, and etching the substrate edge region by forming a plasma with the edge etching unit.

The substrate treating process performed in the first chamber may be any one of a process of forming a film on the substrate or etching the film on the substrate or the substrate.

The edge etching unit includes moving the second chamber including the edge etching unit or moving the edge etching unit into the first chamber by the movement of the edge etching unit itself.

And prior to moving the edge etching unit, lowering the gas ejection portion located in the first chamber to be adjacent to the upper surface of the substrate to expose the edge region of the substrate and to shield the central region of the substrate.

The method may further include injecting an inert gas through the gas injector.

According to the present invention, after performing a process of depositing or etching a film on a substrate in a process chamber, the edge etching unit is moved into the process chamber, thereby continuously etching the edge region of the substrate in the process chamber without exposing the substrate to the atmosphere. can do. Through this, particles present in the atmosphere may be attached to prevent the substrate from being contaminated, thereby reducing defects of the device formed on the substrate.

In addition, since the present invention proceeds in-situ not only the main process but also the substrate edge etching in the same process chamber, the substrate processing time can be shortened and productivity can be improved. In addition, the present invention can reduce the substrate processing cost since a separate substrate edge etching apparatus is not required.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. 2 is a cross-sectional view of the edge etching unit according to the first modification of the first embodiment. 3 is a cross-sectional view of the edge etching unit according to the second modification of the first embodiment. 4 is a cross-sectional view of an edge etching unit according to a third modification of the first embodiment.

1A and 1B, the substrate processing apparatus according to the first embodiment includes a first chamber 100 and a second chamber 200.

The first chamber 100 is formed in a cylindrical shape or a rectangular box shape, and a predetermined reaction space is provided inside the first chamber 100 so as to process the substrate 10. The first chamber 100 is not limited thereto, and the first chamber 100 may be manufactured to correspond to the shape of the substrate 10.

The first chamber 100 is a process chamber in which a process of depositing a film on the substrate 10 or etching a film on the substrate 10 is performed. The first chamber 100 according to the first embodiment illustrates a plasma deposition chamber for forming a film on the substrate 10. In the first chamber 100, a substrate support part 110 positioned below the first chamber 100 to support the substrate, and disposed above the substrate support part 110 to face the substrate 10 toward the substrate 10. And a gas injector 120 for injecting inert gas, a gas supply pipe 131 connected to the gas injector 120, and supplying a process gas to the gas injector 120, a gas injector 120, The first driving unit 140 is installed to be connected to the gas injection unit 120 can be raised and lowered. In addition, a process gas supply unit connected to one end of the gas supply pipe 131 protruding outside the first chamber 100 to the outside of the first chamber 100 to supply a process gas to the process gas supply pipe 131. 132 is disposed. In addition, although not shown, an inert gas supply pipe and an inert gas supply unit for supplying an inert gas may be included. In addition, the first chamber 100 is provided with an exhaust unit for exhausting the process gas, and a substrate entrance (not shown) for allowing the substrate 10 to enter and exit.

The substrate support unit 110 is installed below the first chamber 100 to accommodate the substrate 10 moved inside the first chamber 100. In this case, an electrostatic chuck or a vacuum chuck may be used as the substrate support 110. Of course, the present invention is not limited thereto, and various means capable of fixing the substrate 10 during the process may be used. At this time, the heating means or cooling means 111 is provided inside the substrate support 110. In addition, a plasma power supply 121 for supplying plasma power is connected to the substrate support 110. At this time, the gas injection unit 120 is preferably connected to the ground. Of course, the connection may be reversed. Here, the substrate support 110 is preferably manufactured in a shape corresponding to the shape of the substrate 10. In addition, the substrate support 110 is manufactured to have a size corresponding to the remaining area except for the edge area of the substrate 10. That is, the substrate support 110 is manufactured to support only the remaining regions except for the edge region of the substrate 10 to expose the substrate edges.

Then, a driving unit (not shown) capable of elevating or rotating the substrate support 110 is connected. Accordingly, the substrate 10 mounted on the substrate support 110 may be elevated to a process height by using a driver (not shown), and a uniform thin film is formed on the substrate 10 seated on the substrate support 110. In order to rotate the substrate support 110. Here, the substrate support 110 may further include a lift pin for assisting in mounting and detaching the substrate 10.

The gas injection unit 120 is manufactured in the shape of a shower head including a plurality of injection holes as illustrated in FIGS. 1A and 1B. However, the present invention is not limited thereto, and the gas injection unit 120 may be manufactured in various shapes corresponding to the shape of the substrate 10. In this case, the size of the gas injection unit 120 is manufactured to expose the edge region of the substrate 10. This is to expose only the edge region of the substrate 10 to the edge etching unit 210 and to shield the non-etch region, that is, the central region of the substrate 10 by using the gas injector 120. Therefore, the gas injector 120 is manufactured such that the process gas injected from the gas injector 120 may be injected not only in the center region of the substrate 10 but also in the edge region of the substrate 100.

The process gas injected through the gas injector 120 may be at least one of various source gases for depositing an insulating film, a semiconductor film, and a metal film. The gas injector 120 serves to inject a process gas onto the substrate 10 and serve as a shielding plate that shields a region other than the edge region of the substrate 10. That is, after the deposition is completed in the first chamber 100 and before the edge region of the substrate 10 is etched, the gas injection unit 120 is lowered to be adjacent to the upper surface of the substrate 10 to shield the substrate ( Unnecessary etching of the remaining area except the edge area of 10) can be prevented. In addition, the inert gas may be injected from the gas injector 120 to prevent the plasma-etched edge etching gas from penetrating into the central region of the substrate 10.

In addition, the gas injector 120 is connected to the first driving unit 140 capable of raising and lowering the gas injector 120. Here, the first driving unit 140 includes a first driving shaft 141 connected to the upper portion of the gas injection unit 120, and a first driving member 142 capable of raising and lowering the first driving shaft 141. In this case, another end of the first driving shaft 141 may protrude out of the first chamber 100, and one end of the protruding first driving shaft 141 may be connected to the first driving member 142. The gas injector 120 may be lowered to be adjacent to the substrate 10 by using the first driver 140. In this case, the gas injection unit 120 may be lowered to be closer to the substrate 10 than the upper electrode 211 of the edge etching unit 210. Thus, the plasma 10 may be shielded from being introduced into the non-etched region of the substrate 10, that is, the center region of the substrate 10, thereby preventing the substrate 10 from being etched in the non-etched region.

Meanwhile, the first chamber 100 may be a thermal evaporation apparatus for heating the raw material and spraying the vaporized raw material onto the substrate. At this time, it is preferable that heating means for heating the raw material is provided in at least one of the raw material supply unit and the injection unit for injecting the raw material.

In addition, the first chamber 100 may be an etching chamber for etching the thin film or the substrate 10 formed on the substrate 10. At this time, the etching gas supply pipe and the etching gas supply unit for supplying the etching gas to the gas injection means 120 of the first chamber 100 is connected. Of course, not only the above-described deposition chamber and etching chamber as the first chamber 100 but also various process chambers for manufacturing a semiconductor device may be used.

As shown in FIGS. 1A and 1B, a second chamber 200 is provided on a side of the first chamber 100. The second chamber 200 may be manufactured in a cylindrical shape or a rectangular box shape. In addition, the edge etching unit 210 is installed in the second chamber 200. In this case, a gate valve 300 is provided between the first chamber 100 and the second chamber 200 to open or close the two chambers 100 and 200.

The second chamber 200 moves horizontally into the first chamber 100. In this case, the second chamber 200 is manufactured to have a smaller size than the first chamber 100 so that the second chamber 200 can be drawn into the first chamber 100. Since the edge etching device 210 is located in the inner space of the second chamber 200, the second chamber 200 is moved into the first chamber 100, thereby being located inside the second chamber 200. The edge etching unit 210 is also moved to the interior space of the first chamber 100.

The second chamber 200 including the edge etching unit 210 may have a substrate 10 in a space between the upper electrode 211 and the lower electrode 212 of the edge etching unit 210 at the side of the first chamber 100. Is positioned so that the edge region of the can be disposed. That is, the second chamber 200 moves the second chamber 200 to the first chamber 100 so that the edge etching unit 210 horizontally moves into the first chamber 100. The edge region of the substrate 10 may be disposed between the upper electrode 211 and the lower electrode 211 of FIG. In this case, the substrate 10 seated on the substrate support 110 may be disposed at an edge etching process position for etching the edge region of the substrate 10 after the main process is completed in the first chamber 100. It is preferable.

As described above, the second chamber 200 may move into the first chamber 100. At this time, the second chamber 200 is connected to the second driver 260 that can horizontally move the second chamber 200 into the first chamber 100. The second driving unit 260 includes a second driving shaft 261 connected to the second chamber 200 and a second driving member 262 for horizontally moving the second driving shaft 261. Here, any means may be used as the second driving unit 260 as long as it can move the second chamber 200 horizontally. For example, any one of a cylinder, an LM guide, and a gear may be used.

In addition, by adjusting the moving distance that the edge etching unit 210 moves into the first chamber 100 by using the second driving unit 260, the upper electrode 211 and the lower electrode of the edge etching unit 210 ( The area where the edge area of the substrate 10 is exposed in the space between the 212 and the second area may be adjusted.

In addition, the bellows 270 disposed to surround the second chamber 200 is connected to the second chamber 200, and a vacuum pump (not shown) capable of vacuuming the internal space of the second chamber 200 is connected. . The vacuum pump for evacuating the second chamber 200 may be provided separately from the vacuum means for evacuating the first chamber 100, and the vacuum pump of the first chamber 100 may be shared and used.

The bellows 270 serves to seal between the first chamber 100 and the second chamber 200. Thus, even when the second chamber 200 moves into the first chamber 100 using the bellows 270, the vacuum of the second chamber 200 and the first chamber 100 can be maintained.

Here, the bellows 270 is preferably made of a flexible material is connected to move with the second chamber 200 to move. When the second chamber 200 moves into the first chamber 100, the bellows 270 connected to the second chamber 200 contracts than the initial state, and the second chamber 100 is moved to the first chamber 100. Moving outside of the bellows 270 is elongated again. As a result, when the second chamber 200 is carried into or taken out of the first chamber 100 through the bellows 270, the vacuum state of the first chamber 100 and the second chamber 200 may be maintained.

The edge etching unit 210 serves to etch and remove the film or the remaining particles formed in the edge region of the substrate 10. The edge etching unit 210 includes an upper electrode 211 and a lower electrode 212 spaced apart from each other, a plasma power supply unit 213 for supplying plasma power to the upper electrode 211, and an upper electrode 211. And an etching gas supply pipe 217 for supplying an etching gas to a space between the lower electrode 212 and the lower electrode 212. At this time, the lower electrode 212 is connected to the ground. Of course, the opposite connection is also possible. In addition, the present invention is not limited thereto, and plasma power may be applied to the substrate support 110, and the upper electrode 211 and the lower electrode 212 may be grounded.

When the plasma power is supplied to the upper electrode 211 and a process gas, for example, an etching gas is injected into the edge region of the substrate 10, plasma may be generated between the upper electrode 211 and the lower electrode 212.

In addition, the edge etching unit 210 may include an etching gas supply part 216 for providing an etching gas to the etching gas supply pipe 217, a support part 214 to which the upper electrode 211 and the lower electrode 212 are connected; It may further include a gas flow member 215 provided inside the support 214.

The support part 214 may have a '-' shape including first and second protrusions protruding in the direction of the gate valve 300 and including a connection part connecting the first and second protrusions. As shown in FIGS. 1A and 1B, an upper electrode 211 and a lower electrode 212 are provided at ends of each protrusion of the support part 214. In this case, since the protrusions of the support part 214 are spaced apart from each other, a gap in which a plasma can be generated is provided between the upper electrode 211 and the lower electrode 212. The support 214 is preferably made of an insulating material. Thus, the plasma generated at the upper electrode 211 and the lower electrode 212 may be concentrated in the space between the upper electrode 211 and the lower electrode 212 without spreading.

The etching gas supply pipe 217 may be disposed at a connection portion connecting each protrusion of the support 214. Although not shown, an etching gas supply pipe 217 may be provided with a flow meter to adjust an amount of the etching gas. One end of the etching gas supply pipe 217 protrudes out of the second chamber 200 and is connected to the etching gas supply part 216.

The gas flow member 215 serves to uniformly supply the etching gas to the space between the upper electrode 211 and the lower electrode 212. At this time, the gas flow member 215 is provided inside the '-' shaped support 214. In this case, the gas flow member 215 may be manufactured in a 'c' shape such as the support 214, and may be manufactured in a smaller size than the support 214. Of course, the present invention is not limited thereto and may be manufactured in various shapes to uniformly supply the etching gas to the space between the upper electrode 211 and the lower electrode 212. In addition, the gas flow member 215 is more preferably disposed to be spaced inside the support 214. As a result, the etching gas supplied through the etching gas supply pipe 217 moves along the spaced space between the support part 214 and the gas flow member 215 to be provided in the space between the upper electrode 211 and the lower electrode 212. Supplied.

The shape of the edge etching unit 210 according to the present invention may be modified in various shapes.

2 is a cross-sectional view of the edge etching unit according to the first modification of the first embodiment.

Referring to FIG. 2, the etching gas supply pipe 217 may be disposed to penetrate the upper electrode 211 and the lower electrode 212, respectively. That is, by inserting the etching gas supply pipe 217 into each of the upper electrode 211 and the lower electrode 211 for generating a plasma, the etching gas is directly in the space between the upper electrode 211 and the lower electrode 212. Sprayed.

3 is a cross-sectional view of the edge etching unit according to the second modification of the first embodiment.

Referring to FIG. 3, an etching gas supply pipe 217 may be disposed directly in front of the upper electrode 211 and the lower electrode 212. That is, the etching gas supply pipe 217 is disposed at the end of each protrusion of the support part 214 protruding toward the gate valve 300, and the upper electrode 211 and the lower electrode (behind the etching gas supply pipe 217) are disposed. 212 may be disposed. In addition, as shown in FIG. 3, an end of the etching gas supply pipe 217 may be bent to effectively supply the etching gas to the space between the upper electrode 211 and the lower electrode 212.

4 is a cross-sectional view of the edge etching unit according to the third modification of the first embodiment.

Referring to FIG. 4, an etching gas supply pipe 217 may be disposed immediately after the upper electrode 211 and the lower electrode 212. In this case, the etching gas supply pipe 217 may be inserted into the protrusion of the support 214 to be horizontal to the protrusion of the support 214. That is, the upper electrode 211 and the lower electrode 212 are disposed in each of the protrusions of the support portion 214 protruding in the direction of the gate valve 300, and the etching gas behind the upper electrode 211 and the lower electrode 212. Supply piping 217 may be disposed. In addition, an end of the etching gas supply pipe 217 penetrating the support part 214 may be bent to effectively supply the etching gas to the space between the upper electrode 211 and the lower electrode 212.

In the first embodiment, the second chamber 200 including the edge etching unit 210 is moved into the first chamber 100, but the present invention is not limited thereto, and the edge located in the internal space of the second chamber 200 is not limited thereto. Only the etching unit 210 may be moved into the first chamber 100.

5 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention.

In the following, description overlapping with the first embodiment is omitted.

As shown in FIGS. 5A and 5B, the edge etching unit 210 is connected to a second driver 260 capable of horizontally moving the edge etching unit 210. In this case, the second driving shaft 261 of the second driving unit 260 is connected to the supporting portion 214 of the edge etching unit 210 through the second chamber 200, and the other end of the second driving shaft 261 is It is connected to the second drive member 262. Thus, as shown in FIG. 5B, the edge etching unit 210 may be horizontally moved into the first chamber 100 by using the second driver 260.

At this time, the bellows 270 is disposed to surround the second drive shaft 261. As a result, when the edge etching unit 210 moves into the first chamber 100 or moves into the inner space of the second chamber 200 within the first chamber 100, the bellows 270 may be used. The vacuum state of the chamber 200 may be maintained.

Hereinafter, a method of treating a substrate 10 according to a first embodiment of the present invention will be described with reference to FIGS. 1A and 1B.

First, the substrate 10 is introduced into the first chamber 100, and the substrate 10 is seated on the substrate support 110 of the first chamber 100. Then, the substrate support 110 on which the substrate 10 is mounted is lifted and rotated to a process height. Subsequently, a process of treating the substrate 10, such as depositing a film on the substrate 10, etching the substrate 10, or etching the film on the substrate 10, is performed in the first chamber 100.

After the process of processing the substrate 10 in the first chamber 100 is finished, the substrate support 110 is moved so that the edge etching unit 210 having an edge region of the substrate 10 connected to the side of the first chamber 100. Corresponding position in the space between the upper electrode 211 and the lower electrode 212. As shown in FIG. 1B, the gas injector 120 is lowered to be adjacent to the upper surface of the substrate 10 using the first driver 140 of the first chamber 100. In this case, the gas injection unit 120 may be lowered closer to the substrate 10 than the upper electrode 211. In addition, although not shown, the inert gas may be injected through the gas injector 120. Thus, the plasma-etched etching gas may be shielded from being introduced into the central region of the substrate 10 using the gas injection unit 120.

Then, the gate valve 300 positioned between the first chamber 100 and the second chamber 200 is opened. Subsequently, the second chamber 200 is drawn into the first chamber 100 using the second driver 260 connected to the second chamber 200. In this case, since the edge etching unit 210 is positioned inside the second chamber 200, the edge etching unit 210 may be moved into the first chamber 100 by moving the second chamber 200. In this case, a vacuum state of the first chamber 100 and the second chamber 200 may be maintained through the bellows 270 surrounding the second chamber 200. In addition, by moving the second chamber 200 by controlling the second driver 260, the edge region of the substrate 10 is formed in the space between the upper electrode 211 and the lower electrode 212 of the edge etching unit 210. Is inserted.

When the edge region of the substrate 10 is disposed between the upper electrode 211 and the lower electrode 212, the substrate support 110 on which the substrate 10 is seated is rotated. Supply plasma power to the upper electrode 211 The lower electrode 212 is grounded. Subsequently, the etching gas is injected between the upper electrode 211 and the lower electrode 212. The etching gas moves along the spaced space between the support part 214 and the gas flow member 215 provided inside the support part 214 and is injected into the space between the upper electrode 211 and the lower electrode 212. As a result, a plasma is generated between the upper electrode 211 and the lower electrode 212, thereby turning the etching gas into a plasma. In this case, since the support part 214 to which the upper electrode 211 and the lower electrode 212 are connected is an insulator, the plasmalized etching gas is concentrated in the space between the upper electrode 211 and the lower electrode 212. That is, the plasma-etched etching gas is concentrated in the edge region of the substrate 10 disposed in the space between the upper electrode 211 and the lower electrode 211. Through this, the plasmalized etching gas reacts with the film or particles in the edge region of the substrate 10 to etch and remove them.

At this time, since the substrate support 110 on which the substrate 10 is placed is rotating, the edge region of the entire substrate 10 may be uniformly etched. In addition, since the remaining area except the edge area of the substrate 10 is shielded using the gas injector 120, only the edge area of the substrate 10 may be etched without the center area of the substrate 10 being etched. Can be.

Subsequently, after the process of etching the edge region of the substrate 10 is finished, the plasma power supply and the etching gas supply are stopped. In addition, the inert gas is stopped and the rotation of the substrate support 110 is stopped. In addition, the gas injection unit 120 disposed above the substrate 100 is elevated to an initial position. Subsequently, after the process of etching the edge region of the substrate 10 is finished, the edge etching unit 210 located in the second chamber 200 by being taken out of the second chamber 200 to be located outside the first chamber 100. Export)

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention.

2 is a cross-sectional view of the edge etching unit according to the first modification of the first embodiment.

3 is a sectional view of an edge etching unit according to a second modification of the first embodiment;

4 is a sectional view of an edge etching unit according to a third modification of the first embodiment;

5 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: first chamber 200: edge etching chamber

210: edge etching unit 211: upper electrode

212: lower electrode 213: plasma power supply unit

214: support 215: gas flow member

216: etching gas supply unit 300: gate valve

Claims (19)

A first chamber having a space for processing the substrate; A second chamber connected to the first chamber side; And an edge etching unit located in the second chamber. The method according to claim 1, The edge etching unit is capable of entering and exiting into the first chamber by the movement of the second chamber or the movement of the edge etching unit itself. The method according to claim 2, And a driving unit connected to any one of the second chamber and the edge etching unit to move the edge etching unit into the first chamber. The method according to claim 3, And a bellows disposed to surround any one of the second chamber and the driving unit to seal the first chamber. The method according to claim 1, The first chamber may include a substrate support configured to place a substrate to expose an edge region of the substrate; And a gas injector for injecting gas into an upper surface of the substrate seated on the substrate support. The method according to claim 5, And the gas injector can move up and down to be adjacent to an upper surface of the substrate placed in the substrate support, and expose the edge region of the substrate. The method according to claim 1, The edge etching unit may include an upper electrode and a lower electrode spaced apart from each other; And an etching gas supply unit supplying an etching gas to a space between the upper electrode and the lower electrode. The method according to claim 5, And a plasma power supply for supplying plasma power to the substrate support. The method according to claim 7, And a plasma power supply for supplying plasma power to any one of the upper electrode and the lower electrode. The method according to claim 7, The edge etching unit includes first and second protrusions spaced apart from each other to provide a plasma formation space, and a connection part connecting the first and second protrusions, and the upper electrode and the lower electrode are connected to each of the protrusions. Substrate processing apparatus further comprises a supporting portion. The method according to claim 10, And an etching gas supply part disposed to penetrate through the connection part of the support part. The method according to claim 10, And an etching gas supply part disposed through the upper electrode and the lower electrode connected to each protrusion of the support. The method according to claim 10, And an etching gas supply unit immediately before or immediately after an upper electrode and a lower electrode connected to each protrusion of the support. The method according to claim 7, The edge etching unit may further include a gas flow member to allow the etching gas supplied from the etching gas supply to move into the space between the upper electrode and the lower electrode. Performing a substrate processing process in the first chamber; After finishing the substrate processing process in the first chamber, moving an edge etching unit so that an edge region of the substrate is located in the edge etching unit; Rotating the substrate support on which the substrate is placed; Forming a plasma with the edge etching unit to etch a substrate edge region. The method according to claim 15, The substrate processing process performed in the said 1st chamber is any one of the process of forming a film | membrane in a board | substrate, or etching a film | membrane on the said board | substrate or the said board | substrate. The method according to claim 15, And the edge etching unit moves the second chamber including the edge etching unit or moves the edge etching unit into the first chamber by movement of the edge etching unit itself. The method according to claim 15, Prior to moving the edge etching unit, lowering the gas ejection portion located in the first chamber to be adjacent to the upper surface of the substrate, exposing the edge region of the substrate and shielding the central region of the substrate. . The method according to claim 18, And injecting an inert gas through the gas injector.

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