KR20090084340A - Photocurable resin composition and method for preparing of mold using the same - Google Patents
Photocurable resin composition and method for preparing of mold using the same Download PDFInfo
- Publication number
- KR20090084340A KR20090084340A KR1020080010450A KR20080010450A KR20090084340A KR 20090084340 A KR20090084340 A KR 20090084340A KR 1020080010450 A KR1020080010450 A KR 1020080010450A KR 20080010450 A KR20080010450 A KR 20080010450A KR 20090084340 A KR20090084340 A KR 20090084340A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- epoxy
- oligomer
- weight
- acrylate
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- 125000000524 functional group Chemical group 0.000 claims abstract description 32
- 239000004593 Epoxy Substances 0.000 claims abstract description 26
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 19
- 150000002148 esters Chemical class 0.000 claims abstract description 13
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 9
- 125000003277 amino group Chemical group 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000002952 polymeric resin Substances 0.000 claims description 51
- 229920003002 synthetic resin Polymers 0.000 claims description 51
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- -1 phenyl epoxy acrylate Chemical compound 0.000 claims description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 10
- 125000005395 methacrylic acid group Chemical group 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 10
- 238000001723 curing Methods 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 claims description 4
- 229920002284 Cellulose triacetate Polymers 0.000 claims description 4
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 4
- 239000004713 Cyclic olefin copolymer Substances 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 4
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- HHBOIIOOTUCYQD-UHFFFAOYSA-N ethoxy-dimethyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(C)CCCOCC1CO1 HHBOIIOOTUCYQD-UHFFFAOYSA-N 0.000 claims description 4
- 229920002492 poly(sulfone) Polymers 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 235000019422 polyvinyl alcohol Nutrition 0.000 claims description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 3
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000016 photochemical curing Methods 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- KIJJAQMJSXOBIE-UHFFFAOYSA-N (2-methylcyclohexyl) 2-methylprop-2-enoate Chemical compound CC1CCCCC1OC(=O)C(C)=C KIJJAQMJSXOBIE-UHFFFAOYSA-N 0.000 claims description 2
- SSLASPHAKUVIRG-UHFFFAOYSA-N (2-methylcyclohexyl) prop-2-enoate Chemical compound CC1CCCCC1OC(=O)C=C SSLASPHAKUVIRG-UHFFFAOYSA-N 0.000 claims description 2
- JHGGYGMFCRSWIZ-UHFFFAOYSA-N 2,2-dichloro-1-(4-phenoxyphenyl)ethanone Chemical compound C1=CC(C(=O)C(Cl)Cl)=CC=C1OC1=CC=CC=C1 JHGGYGMFCRSWIZ-UHFFFAOYSA-N 0.000 claims description 2
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 claims description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims description 2
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 claims description 2
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 claims description 2
- JFWFAUHHNYTWOO-UHFFFAOYSA-N 2-[(2-ethenylphenyl)methoxymethyl]oxirane Chemical compound C=CC1=CC=CC=C1COCC1OC1 JFWFAUHHNYTWOO-UHFFFAOYSA-N 0.000 claims description 2
- OCKQMFDZQUFKRD-UHFFFAOYSA-N 2-[(3-ethenylphenyl)methoxymethyl]oxirane Chemical compound C=CC1=CC=CC(COCC2OC2)=C1 OCKQMFDZQUFKRD-UHFFFAOYSA-N 0.000 claims description 2
- MCNPOZMLKGDJGP-UHFFFAOYSA-N 2-[2-(4-methoxyphenyl)ethenyl]-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(OC)=CC=C1C=CC1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 MCNPOZMLKGDJGP-UHFFFAOYSA-N 0.000 claims description 2
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 claims description 2
- JSLWEMZSKIWXQB-UHFFFAOYSA-N 2-dodecylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CCCCCCCCCCCC)=CC=C3SC2=C1 JSLWEMZSKIWXQB-UHFFFAOYSA-N 0.000 claims description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 claims description 2
- SLJFKNONPLNAPF-UHFFFAOYSA-N 3-Vinyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1C(C=C)CCC2OC21 SLJFKNONPLNAPF-UHFFFAOYSA-N 0.000 claims description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 2
- DCTLJGWMHPGCOS-UHFFFAOYSA-N Osajin Chemical compound C1=2C=CC(C)(C)OC=2C(CC=C(C)C)=C(O)C(C2=O)=C1OC=C2C1=CC=C(O)C=C1 DCTLJGWMHPGCOS-UHFFFAOYSA-N 0.000 claims description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 239000012965 benzophenone Substances 0.000 claims description 2
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 claims description 2
- 125000005382 boronyl group Chemical group 0.000 claims description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 claims description 2
- KBLWLMPSVYBVDK-UHFFFAOYSA-N cyclohexyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCC1 KBLWLMPSVYBVDK-UHFFFAOYSA-N 0.000 claims description 2
- 125000004386 diacrylate group Chemical group 0.000 claims description 2
- AQNSVANSEBPSMK-UHFFFAOYSA-N dicyclopentenyl methacrylate Chemical compound C12CC=CC2C2CC(OC(=O)C(=C)C)C1C2.C12C=CCC2C2CC(OC(=O)C(=C)C)C1C2 AQNSVANSEBPSMK-UHFFFAOYSA-N 0.000 claims description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims description 2
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 claims description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 claims description 2
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 claims description 2
- FKIRSCKRJJUCNI-UHFFFAOYSA-N ethyl 7-bromo-1h-indole-2-carboxylate Chemical compound C1=CC(Br)=C2NC(C(=O)OCC)=CC2=C1 FKIRSCKRJJUCNI-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- LUCXVPAZUDVVBT-UHFFFAOYSA-N methyl-[3-(2-methylphenoxy)-3-phenylpropyl]azanium;chloride Chemical compound Cl.C=1C=CC=CC=1C(CCNC)OC1=CC=CC=C1C LUCXVPAZUDVVBT-UHFFFAOYSA-N 0.000 claims description 2
- NWAHZAIDMVNENC-UHFFFAOYSA-N octahydro-1h-4,7-methanoinden-5-yl methacrylate Chemical compound C12CCCC2C2CC(OC(=O)C(=C)C)C1C2 NWAHZAIDMVNENC-UHFFFAOYSA-N 0.000 claims description 2
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 claims description 2
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 claims description 2
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 claims description 2
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 claims description 2
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 claims description 2
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 claims description 2
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 claims description 2
- QZWMOMOVGDJVSU-UHFFFAOYSA-N Cc1cc(C)c(C(=O)OP(=O)c2ccccc2)c(C)c1 Chemical compound Cc1cc(C)c(C(=O)OP(=O)c2ccccc2)c(C)c1 QZWMOMOVGDJVSU-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 229920005749 polyurethane resin Polymers 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 abstract description 12
- 230000002522 swelling effect Effects 0.000 abstract description 4
- 150000001336 alkenes Chemical class 0.000 abstract description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 11
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- ZMDDERVSCYEKPQ-UHFFFAOYSA-N Ethyl (mesitylcarbonyl)phenylphosphinate Chemical compound C=1C=CC=CC=1P(=O)(OCC)C(=O)C1=C(C)C=C(C)C=C1C ZMDDERVSCYEKPQ-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
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- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
본 발명은 광경화형 수지 조성물 및 이를 이용한 수지 몰드의 제조방법에 관한 것으로, 특히 종래 수지 몰드에 사용되는 고분자 탄성체인 폴리디메틸실록산(PDMS)이나 열경화, 광경화 고분자 수지 재료와는 달리 유기용매에 의한 비팽윤 특성을 가지며, 비교적 큰 기계적 특성, 높은 복원력과 투과율 등의 특성을 갖는 광경화형 수지 조성물 및 이를 이용한 수지 몰드의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photocurable resin composition and a method of manufacturing a resin mold using the same. In particular, the present invention relates to a polydimethylsiloxane (PDMS), a thermosetting polymer, and a photocurable polymer resin material. The present invention relates to a photocurable resin composition having a non-swelling characteristic and having relatively large mechanical properties, high restoring force and transmittance, and a method of manufacturing a resin mold using the same.
잘 알려진 바와 같이 기판 상에 미세패턴 형성 시 널리 사용되고 있는 방법으로는 포토리소그래피(photolithography) 방법이 있다. 포토리소그래피 방법은 기판 위에 미세패턴을 균일하고 안정적으로 세길 수 있다는 장점이 있으나, 여러 단계의 공정(수지 도포, 열처리, 노광, 현상, 세정, 식각 등)을 거쳐야 한다는 단점이 있다. 이러한 복잡한 공정은 각 단계별로 고가의 장비를 필요로 하고, 각 공정상의 마진으로 인한 컨트롤의 어려움, 패턴 형성까지 많은 시간을 소비하게 하는 단점이 있다. 이는 결국 제조 원가의 상승 및 생산성 저하를 야기하는 근본적인 원인이 된다. As is well known, a photolithography method is widely used as a method of forming a fine pattern on a substrate. The photolithography method has the advantage that the fine pattern can be counted uniformly and stably on the substrate, but has the disadvantage of having to go through several steps (resin coating, heat treatment, exposure, development, cleaning, etching, etc.). This complex process requires expensive equipment in each step, and has a disadvantage in that it takes a lot of time to control patterns and pattern formation due to margins in each process. This, in turn, is a fundamental cause of an increase in manufacturing costs and a decrease in productivity.
종래 포토리소그래피 방식의 한계를 극복하기 위해 소개된 여러 방식들 중 차세대 리소그래피 기술로 인식되고 있는 기술로서 임프린트 리소그래피 기술이 있다. 임프린트 리소그래피 기술은 경제적이고도 효과적으로 미세 구조물을 제작할 수 있는 기술로, 미세 구조물이 각인된 스탬프를 기재 위에 스핀코팅(spincoating) 또는 디스펜싱(dispensing)된 레지스트(resist)의 표면에 눌러 미세구조물을 전사하는 기술이다. Imprint lithography technology is one of several methods introduced to overcome the limitations of the conventional photolithography method and is recognized as a next generation lithography technology. Imprint lithography technology is an economical and effective technique for producing microstructures by transferring a stamped stamp of microstructures onto the surface of a spincoated or dispensed resist onto a substrate. Technology.
초기의 임프린트 기술은 레지스트가 도포되어 있는 기판 표면을 유리전이온도 이상의 고온에서 고압으로 누른 후 냉각시켜 분리하는 방법을 사용하였다. 하지만 이 방식은 공정이 쉽고 장비가격이 저렴한 장점이 있는 반면에 공정시간이 길고 고압이 필요한 단점이 있다. 특히, 고온, 고압을 필요로 하기 때문에 기판의 훼손 가능성이 있고, 몰드와 기판의 분리가 까다롭다. Early imprint techniques used a method in which the surface of a resist-coated substrate was pressed under high pressure at a high temperature above the glass transition temperature, and then cooled and separated. However, this method has the advantage of easy process and low equipment price, while long process time and high pressure are required. In particular, since high temperature and high pressure are required, there is a possibility of damage to the substrate, and separation of the mold and the substrate is difficult.
기존의 수지몰드에 사용된 대표적인 고분자 탄성체인 폴리디메틸실록산(polydimethylsiloxane, PDMS)을 이용한 수지몰드의 장점은, 폴리디메틸실록산이 탄성체이므로 패턴을 형성할 기판 표면과의 균일한 접촉이 쉬우며, 폴리디메틸실록산의 낮은 표면에너지로 하여 도포된 레지스트 표면과의 접착력이 작아 패턴형성 후 기판 표면으로부터 쉽게 분리가 가능하다는 것이다. 또한, 3차원 그물구조에 기인한 높은 기체 투과성으로 인해 용매의 흡수가 용이하다는 장점이 있다. 반면에, 폴리디메틸실록산 수지 몰드는 기계적 강도가 낮아 변형이 쉽게 일어나고, 일반적인 유기용매에 의해 팽윤(swelling)되어 변형이 발생하므로 패턴형성에 사용할 고분자 및 용매의 선정에 상당한 제약이 따른다는 문제가 있다.The advantage of the resin mold using polydimethylsiloxane (PDMS), which is a typical polymer elastomer used in existing resin molds, is that since polydimethylsiloxane is an elastomer, it is easy to make uniform contact with the surface of the substrate to form a pattern. Because of the low surface energy of the siloxane, the adhesion strength with the applied resist surface is small, so that it can be easily separated from the substrate surface after pattern formation. In addition, due to the high gas permeability due to the three-dimensional network structure there is an advantage that the absorption of the solvent is easy. On the other hand, the polydimethylsiloxane resin mold has a low mechanical strength, so deformation easily occurs, and deformation occurs due to swelling by a general organic solvent, which leads to a significant limitation in selecting a polymer and a solvent to be used for pattern formation. .
상기와 같은 종래기술의 문제점을 해결하고자, 본 발명은 종래 수지 몰드에 사용되는 고분자 탄성체인 폴리디메틸실록산(PDMS)이나 열경화, 광경화 고분자 수지 재료와는 달리 유기용매에 의한 비팽윤 특성을 가지며, 기계적 특성이 좋으며, 높은 복원력과 투과율 등의 특성을 갖는 광경화형 수지 조성물을 제공하는 것을 목적으로 한다.In order to solve the problems of the prior art as described above, the present invention has a non-swelling property by an organic solvent, unlike the polydimethylsiloxane (PDMS), which is a polymer elastomer used in a conventional resin mold, or a thermosetting or photocuring polymer resin material. It is an object of the present invention to provide a photocurable resin composition having good mechanical properties, high resilience and transmittance.
또한 본 발명은 반도체, 디스플레이를 포함하는 각종 전자 디바이스 산업 공정에 필요한 미세패턴을 안정적이고 용이하게 형성할 수 있는 광경화형 수지 조성물, 이를 이용한 수지 몰드의 제조방법 및 상기 방법에 의하여 제조된 수지 몰드를 제공하는 것을 목적으로 한다.The present invention also provides a photocurable resin composition capable of stably and easily forming fine patterns required for various electronic device industrial processes including semiconductors and displays, a method of manufacturing a resin mold using the same, and a resin mold manufactured by the above method. It aims to provide.
상기 목적을 달성하기 위하여, 본 발명은 In order to achieve the above object, the present invention
a) 관능기를 가진 반응성 에스터계 올리고머;a) reactive ester oligomers having functional groups;
b) 관능기를 가진 반응성 에폭시계 올리고머 또는 관능기를 가진 반응성 불소계 올리고머;b) reactive epoxy oligomers having functional groups or reactive fluorine oligomers having functional groups;
c)ⅰ) 올레핀계 불포화 화합물;c) iii) olefinically unsaturated compounds;
ⅱ) 에폭시기를 포함하는 불포화 화합물; 및 Ii) unsaturated compounds containing epoxy groups; And
ⅲ) 에폭시기, 아민기 또는 불소기를 포함하는 실리콘계 화합물 Iii) a silicone-based compound containing an epoxy group, an amine group or a fluorine group
로 이루어진 군으로부터 선택된 어느 하나 이상의 화합물; 및 Any one or more compounds selected from the group consisting of; And
d) 광개시제d) photoinitiators
를 포함하는 것을 특징으로 하는 광경화형 수지 조성물을 제공한다.It provides a photocurable resin composition comprising a.
바람직하게, 상기 광경화형 수지 조성물은Preferably, the photocurable resin composition is
a) 관능기를 가진 반응성 에스터계 올리고머 30 내지 90 중량부;a) 30 to 90 parts by weight of a reactive ester oligomer having a functional group;
b) 관능기를 가진 반응성 에폭시계 올리고머 10 내지 70 중량부 또는 관능기를 가진 반응성 불소계 올리고머 10 내지 70 중량부;b) 10 to 70 parts by weight of a reactive epoxy oligomer having a functional group or 10 to 70 parts by weight of a reactive fluorine oligomer having a functional group;
c) 상기 a)+b)의 올리고머 100 중량부를 기준으로c) based on 100 parts by weight of the oligomer of a) + b)
ⅰ) 올레핀계 불포화 화합물 5 내지 30 중량부; Iii) 5 to 30 parts by weight of olefinically unsaturated compound;
ⅱ) 에폭시기를 포함하는 불포화 화합물 5 내지 30 중량부; 및 Ii) 5 to 30 parts by weight of an unsaturated compound containing an epoxy group; And
ⅲ) 에폭시기, 아민기 또는 불소기를 포함하는 실리콘계 화합물 5 내지 30 중량부 Iii) 5 to 30 parts by weight of a silicone compound containing an epoxy group, an amine group or a fluorine group
로 이루어진 군으로부터 선택된 어느 하나 이상의 혼합물 5 내지 30 중량부; 및 5 to 30 parts by weight of any one or more mixtures selected from the group consisting of; And
d) 상기 a)+b)의 올리고머 100 중량부를 기준으로 광개시제 0.1 내지 10 중량부를 포함한다.d) 0.1 to 10 parts by weight of the photoinitiator based on 100 parts by weight of the oligomer of a) + b).
또한 본 발명은In addition, the present invention
S1) 패턴이 형성된 원판몰드 일면에 제1항 기재의 광경화형 수지 용액을 도 포하고 경화시켜 원판몰드의 패턴을 전사시키는 단계;S1) applying a pattern of the photocurable resin solution according to claim 1 on one surface of the disc mold on which the pattern is formed and transferring the pattern of the disc mold;
S2) 상기 패턴이 전사된 경화 고분자 수지를 원판몰드로부터 이형시키는 단계;S2) releasing the cured polymer resin transferred from the disc mold;
S3) 상기 이형된 패턴이 형성된 경화 고분자 수지의 배면 또는 상기 경화 고분자 수지와 접하는 배면지지체의 일면에 플라즈마 처리면을 형성하는 단계;S3) forming a plasma treatment surface on the back surface of the cured polymer resin in which the release pattern is formed or on one surface of the back support in contact with the cured polymer resin;
S4) 상기 경화 고분자 수지의 배면에 형성된 플라즈마 처리면에 배면지지체를 형성하는 단계; 및S4) forming a back support on the plasma processing surface formed on the back of the cured polymer resin; And
S5) 상기 배면지지체가 형성된 경화 고분자 수지를 점착 또는 경화시켜 고분자 수지 몰드를 제조하는 단계S5) preparing a polymer resin mold by adhering or curing the cured polymer resin having the back support formed thereon;
를 포함하는 수지 몰드의 제조방법을 제공한다.It provides a method for producing a resin mold comprising a.
또한 본 발명은 상기 수지 몰드의 제조방법에 의하여 제조된 수지 몰드를 제공한다.In another aspect, the present invention provides a resin mold prepared by the method for producing a resin mold.
본 발명은 종래 수지 몰드에 사용되는 고분자 탄성체인 폴리디메틸실록산(PDMS)이나 열경화, 광경화 고분자 수지 재료와는 달리 유기용매에 의한 비팽윤 특성을 가지며, 비교적 큰 기계적 특성, 높은 복원력과 투과율 등의 특성을 가져 반도체, 디스플레이를 포함하는 각종 전자 디바이스 산업 공정에 필요한 미세패턴을 안정적이고 용이하게 형성할 수 있다.The present invention, unlike polydimethylsiloxane (PDMS), which is a polymer elastomer used in a conventional resin mold, or a thermosetting or photocuring polymer resin material, has a non-swelling property by an organic solvent, and has relatively large mechanical properties, high restoring force, and transmittance. It is possible to stably and easily form fine patterns required for various electronic device industrial processes including semiconductors and displays.
이하 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 광경화형 수지 조성물은 a) 관능기를 가진 반응성 에스터계 올리고머; b) 관능기를 가진 반응성 에폭시계 올리고머 또는 관능기를 가진 반응성 불소계 올리고머; c)ⅰ) 올레핀계 불포화 화합물; ⅱ) 에폭시기를 포함하는 불포화 화합물; 및 ⅲ) 에폭시기, 아민기 또는 불소기를 포함하는 실리콘계 화합물로 이루어진 군으로부터 선택된 어느 하나 이상의 화합물; 및 d) 광개시제를 포함하는 것을 특징으로 한다.The photocurable resin composition of the present invention comprises a) a reactive ester oligomer having a functional group; b) reactive epoxy oligomers having functional groups or reactive fluorine oligomers having functional groups; c) iii) olefinically unsaturated compounds; Ii) unsaturated compounds containing epoxy groups; And iii) at least one compound selected from the group consisting of silicone-based compounds comprising an epoxy group, an amine group or a fluorine group; And d) a photoinitiator.
본 발명의 광경화 수지 조성물에 사용되는 올리고머는 상기 a)의 관능기를 가진 반응성 에스터계 올리고머 및 b) 관능기를 가진 반응성 에폭시계 올리고머 또는 관능기를 가진 반응성 불소계 올리고머를 포함한다. 바람직하기로는 상기 관능기를 가진 반응성 에스터계 올리고머, 관능기를 가진 반응성 에폭시계 올리고머 및 관능기를 가진 반응성 불소계 올리고머를 모두 포함하는 것이 좋다.The oligomer used for the photocurable resin composition of this invention contains the reactive ester type oligomer which has a functional group of said a), and b) the reactive epoxy type oligomer which has a functional group, or the reactive fluorine type oligomer which has a functional group. Preferably, the reactive ester oligomer having the functional group, the reactive epoxy oligomer having the functional group, and the reactive fluorine oligomer having the functional group may be included.
상기 올리고머는 경화시 조밀한 가교결합을 형성하여 유기용매에 대한 비팽윤 특성과 몰드 지지체에 강력한 접착력을 갖는다.The oligomers form dense crosslinks upon curing and have strong adhesion to the mold support and non-swelling properties to organic solvents.
상기 a)의 관능기를 가진 반응성 에스터계 올리고머는 분자량이 200 이상으로, 카복시(carboxy) 그룹을 가지며 1 개 이상의 관능기가 있는 폴리에스터 구조이 다. 바람직하기로는 상기 관능기를 가진 반응성 에스터계 올리고머는 분자량이 200 내지 50,000인 것이 좋다.The reactive ester oligomer having the functional group of a) has a molecular weight of 200 or more, and has a carboxy group and a polyester structure having one or more functional groups. Preferably, the reactive ester oligomer having the functional group has a molecular weight of 200 to 50,000.
상기 a) 에스터계 올리고머는 30 내지 90 중량부로 포함되는 것이 바람직하며, 상기 범위 내인 경우 몰드 지지체에 대한 접착력이 우수하며, 동시에 유기용매에 오랜 시간 노출도 부서짐 현상을 현저히 줄일 수 있다.Preferably, the a) ester oligomer is included in an amount of 30 to 90 parts by weight, and if it is within the above range, the adhesion to the mold support is excellent, and at the same time, a long time exposure to the organic solvent can significantly reduce the breakage phenomenon.
상기 b)의 에폭시계 올리고머는 1개 이상의 반응성 관능기를 가진 페닐 에폭시 아크릴레이트 올리고머, 비스페놀A 에폭시 디아크릴레이트 올리고머, 지방족 알킬 디아크릴레이트 올리고머, 피스페놀A 에폭시 디메타아크릴레이트 올리고머,l 및 지방족 알킬 에폭시 트리아크릴레이트 올리고머로 이루어지는 군으로부터 1종 이상 선택되는 올리고머를 사용될 수 있다.The epoxy oligomer of b) is a phenyl epoxy acrylate oligomer, bisphenol A epoxy diacrylate oligomer, aliphatic alkyl diacrylate oligomer, pisphenol A epoxy dimethacrylate oligomer, l and aliphatic alkyl having at least one reactive functional group. Oligomers selected from the group consisting of epoxy triacrylate oligomers can be used.
상기 에폭시계 올리고머는 10 내지 70 중량부로 포함되는 것이 바람직하며, 상기 범위 이하인 경우 지지체와의 낮은 점착 내지 접착력에 의해 지지체로부터 경화된 수지가 탈리될 수 있으며 범위 이상인 경우 팽윤이 극심할 수 있어 상기 범위 내인 경우 유기용매에 의한 팽윤(swelling) 현상을 줄일 수 있을 뿐만 아니라 지지체의 점착 내지 접착력을 향상시킬 수 있다.The epoxy-based oligomer is preferably included in 10 to 70 parts by weight, and when it is below the above range, the cured resin may be detached from the support by low adhesion or adhesion with the support, and when it is above the range, swelling may be severe. Inner can not only reduce the swelling (phenomena) caused by the organic solvent but also improve the adhesion or adhesion of the support.
상기 불소계 올리고머는 1개 이상의 반응성 관능기를 가진 불소계 아크릴레이트 올리고머로서, 10 내지 70 중량부로 포함되는 것이 바람직하며, 10 내지 50 중량부로 포함되면 더욱 좋다. 상기 범위 내인 경우 유기용매에 의한 팽윤, 또는 부서짐 현상을 현저히 줄일 수 있다.The fluorine-based oligomer is a fluorine-based acrylate oligomer having one or more reactive functional groups, preferably 10 to 70 parts by weight, more preferably 10 to 50 parts by weight. When in the above range it is possible to significantly reduce the swelling or fracture phenomenon by the organic solvent.
본 발명의 광경화 수지 조성물은 상기 c)ⅰ) 올레핀계 불포화 화합물; ⅱ) 에폭시기를 포함하는 불포화 화합물; 및 ⅲ) 에폭시기, 아민기 또는 불소기를 포함하는 실리콘계 화합물를 포함한다. 바람직하기로는 각 군에서 1 종 이상 선택되어 2 군 이상을 혼합하여 사용하는 것이 좋다. The photocurable resin composition of this invention is said c) iii) an olefin type unsaturated compound; Ii) unsaturated compounds containing epoxy groups; And iii) a silicone-based compound comprising an epoxy group, an amine group or a fluorine group. Preferably, at least one selected from each group is preferably used by mixing two or more groups.
상기 c)의 성분들은 상기 올리고머에 대한 희석제로서의 역할을 할 뿐만 아니라, 가교 밀도를 높여 유기용매에 의한 팽윤 및 부서짐 현상을 방지하고, 미세패턴 형성 시 이형성을 증가시키는 작용을 한다. The components of c) not only serve as a diluent for the oligomer, but also increase the crosslinking density to prevent swelling and breakage caused by an organic solvent and to increase release property when forming a fine pattern.
상기 c)ⅰ)의 올레핀계 불포화 화합물은 메틸메타크릴레이트, 에틸메타크릴레이트, n-부틸 메타크릴레이트, sec-부틸 메타크릴레이트, tert-부틸 메타크릴레이트, 메틸아크릴레이트, 이소프로필 아크릴레이트, 시클로헥실 메타크릴레이트, 2-메틸시클로 헥실메타크릴레이트, 디시클로펜테닐아크릴레이트, 디시클로펜타닐아크릴레이트, 디시클로펜테닐메타크릴레이트, 디시클로펜타닐메타크릴레이트, 1-아다만틸 아크릴레이트, 1-아다만틸 메타크릴레이트, 디시클로펜타닐옥시에틸메타크릴레이트, 이소보로닐메타크릴레이트, 시클로헥실아크릴레이트, 2-메틸시클로헥실아크릴레이트, 디시클로펜타닐옥시에틸아크릴레이트, 이소보로닐아크릴레이트, 페닐메타크릴레이트, 페닐아크릴레이트, 벤질아크릴레이트, 2-하이드록시에틸메타크릴레이트, 1,6-헥산디올디아크릴레이트로 등을 사용할 수 있다.The olefinically unsaturated compound of c) iii) is methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, tert-butyl methacrylate, methyl acrylate, isopropyl acrylate , Cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, dicyclopentenyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl methacrylate, dicyclopentanyl methacrylate, 1-adamantyl acrylic Rate, 1-adamantyl methacrylate, dicyclopentanyloxyethyl methacrylate, isoboroyl methacrylate, cyclohexyl acrylate, 2-methylcyclohexyl acrylate, dicyclopentanyloxyethyl acrylate, iso Boronyl acrylate, phenyl methacrylate, phenyl acrylate, benzyl acrylate, 2-hydroxyethyl methacrylate, 1,6-hexane As diol diacrylate, etc. can be used.
상기 올레핀계 불포화 화합물은 상기 a)+b) 100 중량부를 기준으로 5 내지 30 중량부로 포함되는 것이 좋으며, 상기 범위 내인 경우 가교 밀도를 높여 유기용매에 의한 팽윤 및 부서짐 현상을 방지하고, 미세패턴 형성 시 이형성을 증가시킬 수 있다.Preferably, the olefinically unsaturated compound is included in an amount of 5 to 30 parts by weight based on 100 parts by weight of the a) + b), and in the above range, increases the crosslinking density to prevent swelling and breakage caused by an organic solvent and to form a fine pattern. Can increase dysplasia.
상기 c)ⅱ)의 에폭시기를 포함하는 불포화 화합물은 아크릴산 글리시딜, 메타크릴산 글리시딜, α-에틸아크릴산 글리시딜, α-n-프로필아크릴산 글리시딜, α-n-부틸아크릴산 글리시딜, 아크릴산-β-메틸글리시딜, 메타크릴산-β-메틸글리시딜, 아크릴산-β-에틸글리시딜, 메타크릴산-β-에틸글리시딜, 아크릴산-3,4-에폭시부틸, 메타크릴산-3,4-에폭시부틸, 아크릴산-6,7-에폭시헵틸, 메타크릴산-6,7-에폭시헵틸, α-에틸아크릴산-6,7-에폭시헵틸, 아크릴산-3,4-에폭시 시클로헥실메틸, 메타크릴산-3,4-에폭시 시클로헥실메틸, 4-비닐시클로헥센옥사이드, o-비닐벤질글리시딜에테르, m-비닐벤질글리시딜에테르, p-비닐벤질글리시딜에테르 등을 사용할 수 있다.The unsaturated compound containing the epoxy group of c) ii) is glycidyl acrylate, glycidyl methacrylate, α-ethyl acrylate glycidyl, α-n-propyl acrylate glycidyl, α-n-butyl acrylate Cydyl, acrylic acid-β-methylglycidyl, methacrylic acid-β-methylglycidyl, acrylic acid-β-ethylglycidyl, methacrylic acid-β-ethylglycidyl, acrylic acid-3,4-epoxy Butyl, methacrylic acid-3,4-epoxybutyl, acrylic acid-6,7-epoxyheptyl, methacrylic acid-6,7-epoxyheptyl, α-ethylacrylic acid-6,7-epoxyheptyl, acrylic acid-3,4 -Epoxy cyclohexylmethyl, methacrylic acid-3,4-epoxy cyclohexylmethyl, 4-vinylcyclohexene oxide, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycid Dyl ether etc. can be used.
상기 에폭시기를 포함하는 불포화 화합물은 상기 a)+b) 100 중량부를 기준으로 5 내지 30 중량부로 포함되는 것이 좋으며, 상기 범위 내인 경우 가교 밀도를 높여 유기용매에 의한 팽윤 및 부서짐 현상을 방지하고, 미세패턴 형성 시 이형성을 증가시킬 수 있다.The unsaturated compound containing the epoxy group is preferably included in 5 to 30 parts by weight based on 100 parts by weight of the a) + b), in the above range to increase the crosslinking density to prevent swelling and breakage by the organic solvent, fine When the pattern is formed, the release property can be increased.
상기 c)ⅲ)의 실리콘계 화합물은 (3-글리시드옥시프로필)트리메톡시릴레인, (3-글리시드옥시프로필)트리에톡시실레인, (3-글리시드옥시프로필)메틸디메톡시실레인, (3-글리시드옥시프로필)트리메톡시실레인, (3-글리시드옥시프로필)디메틸에톡시실레인, (3-글리시드옥시프로필)디메틸에톡시실레인, 3-(메타아크릴록시)프로필트리메톡시실레인, 3,4-에폭시부틸트리메톡시실레인, 3,4-에폭시부틸트리에톡시실레인, 2-(3,4-에폭시시크로헥실)에틸트리메톡시실레인, 2-(3,4-에폭시시크로헥실)에틸트리에톡시실레인, 아미노프로필트리메톡시 실레인 등을 사용할 수 있다.The silicone compound of c) iii) may be (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane , (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) dimethylethoxysilane, (3-glycidoxypropyl) dimethylethoxysilane, 3- (methacryloxy) Propyltrimethoxysilane, 3,4-epoxybutyltrimethoxysilane, 3,4-epoxybutyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane, aminopropyltrimethoxy silane and the like can be used.
상기 실리콘계 화합물은 상기 a)+b) 100 중량부를 기준으로 5 내지 30 중량부로 포함되는 것이 좋으며, 상기 범위 내인 경우 가교 밀도를 높여 유기용매에 의한 팽윤 및 부서짐 현상을 방지하고, 미세패턴 형성 시 이형성을 증가시킬 수 있다.The silicon-based compound is preferably contained in 5 to 30 parts by weight based on 100 parts by weight of the a) + b), when within the range to increase the crosslinking density to prevent swelling and breakage caused by the organic solvent, and releasability when forming a fine pattern Can be increased.
상기와 같은 c)ⅰ) 올레핀계 불포화 화합물; ⅱ) 에폭시기를 포함하는 불포화 화합물; 및 ⅲ) 에폭시기, 아민기 또는 불소기를 포함하는 실리콘계 화합물로 이루어진 군으로부터 선택된 어느 하나 이상의 혼합물은 2종 이상을 혼합하여 사용하는 경우에도 합계 중량이 상기 a)+b) 100 중량부를 기준으로 30 중량부 이내로 사용하는 것이 좋다. 상기 합계 함량이 30 중량부를 초과할 경우에는 기계적 강도 및 유연성이 떨어질 우려가 있다.C) i) olefinically unsaturated compounds as described above; Ii) unsaturated compounds containing epoxy groups; And iii) at least one mixture selected from the group consisting of silicone-based compounds comprising an epoxy group, an amine group or a fluorine group, even when two or more kinds thereof are mixed. It is good to use within the department. If the total content exceeds 30 parts by weight, mechanical strength and flexibility may be deteriorated.
본 발명의 광경화형 수지 조성물에 사용되는 d)의 광개시제는 Irgacure 369, Irgacure 651, Irgacure 907, Irgacure819(시바스페셜티케미컬사), 디페닐-(2,4,6-트리메틸벤조일)포스핀옥사이드, 메틸벤조일포르메이트, 에틸(2,4,6-트리메틸벤조일)페닐포스피네이트, 2,4-비스트리클로로메틸-6-p-메톡시스티릴-s-트리아진, 2-p-메톡시스티릴-4,6-비스트리클로로메틸-s-트리아진, 2,4-트리클로로메틸-6-트리아진, 2,4-트리클로로메틸-4-메틸나프틸-6-트리아진, 벤조페논, p-(디에틸아미노)벤조페논노, 2,2-디클로로-4-페녹시아세토페논, 2,2-디에톡시아세토페논, 2-도데실티오크산톤, 2,4-디메틸티오크산톤, 2,4-디에틸티오크산톤, 2,2-비스-2-클로로페닐-4,5,4,5-테트라페닐-2-1,2-비이미다졸로 등을 단독 또는 2 종 이상 혼합하여 사용할 수 있다. The photoinitiator of d) used in the photocurable resin composition of the present invention is Irgacure 369, Irgacure 651, Irgacure 907, Irgacure 819 (Ciba Specialty Chemical Co., Ltd.), diphenyl- (2,4,6-trimethylbenzoyl) phosphine oxide, methyl Benzoylformate, ethyl (2,4,6-trimethylbenzoyl) phenylphosphinate, 2,4-bistrichloromethyl-6-p-methoxystyryl-s-triazine, 2-p-methoxysty Reyl-4,6-bistrichloromethyl-s-triazine, 2,4-trichloromethyl-6-triazine, 2,4-trichloromethyl-4-methylnaphthyl-6-triazine, benzophenone , p- (diethylamino) benzophenoneno, 2,2-dichloro-4-phenoxyacetophenone, 2,2-diethoxyacetophenone, 2-dodecyl thioxanthone, 2,4-dimethylthioxanthone, 2,4-diethyl thioxanthone, 2,2-bis-2-chlorophenyl-4,5,4,5-tetraphenyl-2-1,2-biimidazolo, etc., alone or in combination of two or more Can be used.
상기 광개시제는 상기 a)+b) 100 중량부를 기준으로 0.1 내지 10 중량부로 포함되는 것이 좋으며, 상기 범위 내인 경우 경화와 제작된 수지 몰드의 투과도 및 보존안정성을 동시에 만족시킬 수 있다.The photoinitiator may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the a) + b), and when it is within the above range, it is possible to satisfy curing and storage stability of the resin mold and curing.
상기와 같은 성분으로 이루어지는 본 발명의 광경화형 수지 조성물은 도포성을 향상시키고 원판몰드와 탈거 시 이형성을 더욱 좋게 하기 위하여 계면활성제를 더 첨가할 수 있다.In the photocurable resin composition of the present invention comprising the above components, a surfactant may be further added in order to improve applicability and to further improve releasability when removing the original mold and stripping.
상기 계면활성제로는 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌노닐페닐에테르, F171, F172, F173(대일본잉크사) FC430, FC431(쓰미또모트리엠사), KP341(신월화학공업사) 등이 사용될 수 있으며, 그 함량은 상기 a)+b) 100 중량부를 기준으로 0.01 내지 2 중량부로 포함되는 것이 좋다.As the surfactant, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, F171, F172, F173 (Tokyo Ink, Inc.) FC430, FC431 (Tumitomotrim Co., Ltd.), KP341 (Shinwol Chemical Co., Ltd.) and the like may be used. Its content is preferably included in 0.01 to 2 parts by weight based on 100 parts by weight of the a) + b).
또한 본 발명은 상기의 광경화형 수지 조성물을 이용한 수지 몰드의 제조방법 및 상기 방법에 의하여 제조된 수지 몰드를 제공한다. In addition, the present invention provides a method for producing a resin mold using the photocurable resin composition and a resin mold produced by the method.
본 발명의 수지 몰드는 S1) 패턴이 형성된 원판몰드 일면에 상기 광경화형 수지 용액을 도포하고 경화시켜 원판몰드의 패턴을 전사시키는 단계; S2) 상기 패턴이 전사된 경화 고분자 수지를 원판몰드로부터 이형시키는 단계; S3) 상기 이형된 패턴이 형성된 경화 고분자 수지의 배면 또는 상기 경화 고분자 수지와 접하는 배면지지체의 일면에 플라즈마 처리면을 형성하는 단계; S4) 상기 경화 고분자 수지의 배면에 형성된 플라즈마 처리면에 배면지지체를 형성하는 단계; 및 S5) 상기 배면지지체가 형성된 경화 고분자 수지를 점착 또는 경화시켜 고분자 수지 몰드를 제조하는 단계를 포함하여 제조할 수 있다.The resin mold of the present invention comprises the steps of transferring the pattern of the disc mold by coating and curing the photocurable resin solution on one surface of the disc mold S1) pattern is formed; S2) releasing the cured polymer resin transferred from the disc mold; S3) forming a plasma treatment surface on the back surface of the cured polymer resin in which the release pattern is formed or on one surface of the back support in contact with the cured polymer resin; S4) forming a back support on the plasma processing surface formed on the back of the cured polymer resin; And S5) preparing a polymer resin mold by adhering or curing the cured polymer resin having the rear support formed thereon.
이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명의 바람직한 일실시예에 따른 수지 몰드의 제조방법을 개략적으로 도시하는 단면도이다.1 is a cross-sectional view schematically showing a method of manufacturing a resin mold according to an embodiment of the present invention.
도 1을 참조하면, 먼저 제조하고자 하는 원판몰드(101)의 패턴이 위로 향하도록 한 다음 고분자 수지 용액(102a)을 도포한다. 이때, 상기 고분자 수지 용액(102a)의 도포는 스핀코팅, 슬릿 코팅 등의 방법으로 수행할 수 있다.Referring to FIG. 1, first, the pattern of the
원판몰드(101)에 도포된 고분자 수지 용액(102a)은 질소 내지 대기중 분위기에서 광조사하여 경화시키고, 원판몰드(101)의 패턴이 전사된 경화 고분자 수지(102b)를 원판몰드(101)로부터 이형시킨다.The
상기 이형된 경화 고분자 수지(102b)의 일면에는 원판몰드(101)로부터 전사된 패턴이 형성된다. 상기 패턴이 형성된 경화 고분자 수지(102b)의 배면 상기 경화 고분자 수지(102a)와 접하는 배면지지체(104)의 일면에 플라즈마 처리하여 상기 패턴이 형성된 경화 고분자 수지(102b)와 배면지지체(104)가 점착 또는 접착될 수 있도록 플라즈마 처리면(103)을 형성한다.A pattern transferred from the
상기 경화 고분자 수지(102b)의 배면에 형성된 플라즈마 처리면(103)에 점착제나 접착제를 사용하여 배면지지체(104)를 점착 또는 접착시킨다. 이때, 상기 배면지지체(104)로는 500 ㎚ 파장의 광원에서 투과율이 적어도 85 % 이상인 투명 유리판(Bare glass), ITO(Indium Tin Oxide) 기판, COC(Cyclic olefin copolymer), PAc(Polyacrylate), PC(Polycarbonate), PE(Polyethylene), PEEK(Polyetheretherketone), PEI(Polyetherimide), PEN(Polyethylenenaphthalate), PES(Polyethersulfone), PET(Polyethyleneterephtalate), PI(Polyimide), PO(Polyolefin), PMMA(Polymethylmethacrylate), PSF(Polysulfone), PVA(Polyvinylalcohol), PVCi(Polyvinylcinnamate), TAC(Triacetylcellulose), 폴리실리콘(Poly Silicone), 폴리우레탄(Polyurethane), 에폭시 수지(Epoxy Resin) 등을 사용할 수 있다. 바람직하기로는 상기 500 ㎚ 파장의 광원에서 투과율이 97 내지 99.9%인 것이 좋다.The
상기와 같이 경화 고분자 수지(102b)에 점착 또는 접착된 배면지지체(104)는 몰드 수지와의 완전한 접착을 위해 추가적으로 자외선 내지 열을 가하는 추가 점착 내지 경화공정을 수행하여 최종 고분자 수지 몰드(105)를 제조한다.The
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다.Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.
[실시예]EXAMPLE
실시예 1Example 1
카복시 그룹을 가지는 단관능 폴리에스터 아크릴레이트 75 중량부 및 페닐 에폭시 아크릴레이트 25 중량부의 올리고머 100 중량부에 메타크릴산 글리시딜 10 중량부 및 (3-글리시드옥시프로필)트리메톡시실레인 10 중량부를 혼합한 혼합물 20 중량부, 광개시제로 에틸(2,4,6-트리메틸벤조일)페닐포스피네이트 1 중량부와 메틸벤조일포르메이트 0.5 중량부 및 계면활성제로 KP341(신월화학공업사) 0.01 중량부를 투입하고 상온에서 300~400 rpm으로 20 시간 동안 균일하게 교반하여 투명한 액상의 고분자 수지 용액(102a)을 제조하였다.75 parts by weight of monofunctional polyester acrylate having a carboxy group and 25 parts by weight of phenyl epoxy acrylate and 100 parts by weight of oligomer 10 parts by weight of glycidyl methacrylate and (3-glycidoxypropyl) trimethoxysilane 10 20 parts by weight of a mixture of parts by weight, 1 part by weight of ethyl (2,4,6-trimethylbenzoyl) phenylphosphinate as a photoinitiator, 0.5 part by weight of methyl benzoyl formate, and 0.01 part by weight of KP341 (Shinwol Chemical) as a surfactant Injected and stirred uniformly at 300 ~ 400 rpm for 20 hours at room temperature to prepare a transparent liquid polymer resin solution (102a).
그 다음, 원판몰드(101)의 패턴이 위로 향하도록 하고, 상기 제조한 고분자 수지 용액(102a)의 두께가 100 ㎛가 되도록 슬릿코팅하였다. 원판몰드(101)에 도포된 고분자 수지는 질소 분위기에서 자외선을 조사하여 경화시키고, 원판몰드(101)의 패턴이 전사된 경화 고분자 수지(102b)를 원판몰드(101)로부터 이형하였다.Thereafter, the pattern of the
상기 이형된 경화 고분자 수지(102b)의 패턴이 형성되어 있는 면의 배면에 플라즈마 처리하여 상기 패턴이 형성된 경화 고분자 수지(102b)와 배면지지체(104)가 점착 또는 접착될 수 있도록 플라즈마 처리면(103)을 형성하였다. 그 다음, 상기 이형된 경화 고분자 수지(102b)의 패턴이 형성되어 있는 면의 배면(플라즈마 처리된 면(103))과 배면지지체(104)인 유리기판을 접촉시켜 수지와 지지체를 점착시켰다.Plasma treatment on the back surface of the surface on which the pattern of the release cured polymer resin 102b is formed so that the cured polymer resin 102b and the
상기 점착된 경화 고분자 수지(102b)와 배면지지체(104)의 완전한 접착을 위해 100 ℃의 컨벤션 오븐(convection oven)에 넣어 추가적으로 1 시간 동안 열을 가하여 최종 고분자 수지 몰드(105)를 완성하였다.In order to completely adhere the adhered cured polymer resin 102b and the
실시예 2Example 2
상기 실시예 1에서 올리고머로서 단관능 폴리에스터 아크릴레이트 50 중량부 및 페닐 에폭시 아크릴레이트 50 중량부를 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 실시하였다.Except for using 50 parts by weight of monofunctional polyester acrylate and 50 parts by weight of phenyl epoxy acrylate as an oligomer in Example 1 was carried out in the same manner as in Example 1.
실시예 3Example 3
상기 실시예 1에서 올리고머로서 단관능 폴리에스터 아크릴레이트 60 중량부, 페닐 에폭시 아크릴레이트 30 중량부 및 불소계 아크릴레이트 10 중량부를 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 실시하였다.Except for using 60 parts by weight of monofunctional polyester acrylate, 30 parts by weight of phenyl epoxy acrylate and 10 parts by weight of fluorine-based acrylate as an oligomer in Example 1 was carried out in the same manner as in Example 1.
비교예 1Comparative Example 1
상기 실시예 1에서 올리고머로서 에폭시계 올리고머 및 불소계 올리고머를 사용하지 않고 단관능 폴리에스터 아크릴레이트 100 중량부를 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 실시하였다.In Example 1, 100 parts by weight of the monofunctional polyester acrylate was used instead of the epoxy-based oligomer and the fluorine-based oligomer.
비교예 2Comparative Example 2
상기 실시예 1에서 올리고머로서 에폭시계 올리고머 및 불소계 올리고머를 사용하지 않고 페닐 에폭시 아크릴레이트 100 중량부를 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 실시하였다.Except for using the epoxy oligomer and fluorine oligomer as an oligomer in Example 1, 100 parts by weight of phenyl epoxy acrylate was used in the same manner as in Example 1.
비교예 3Comparative Example 3
상기 실시예 1에서 제조한 고분자 수지 용액을 대신하여 기존 고분자 수지 몰드 재료인 PDMS(Dow-Corning사, sylgard(R) 184 silicone elastomer kit)를 상기 실시예 1과 같이 원판몰드(101)에 100 ㎛ 두께로 도포하고 60 ℃의 오븐에서 180 분 동안 소성시켜 경화한 후, 원판몰드로부터 경화된 수지를 이형하였다.In place of the polymer resin solution prepared in Example 1, PDMS (Dow-Corning, sylgard (R) 184 silicone elastomer kit), which is an existing polymer resin mold material, was 100 μm in the
상기 실시예 1 내지 3 및 비교예 1 내지 3에서 제조한 고분자 수지 몰드를 이용하여 하기와 같은 방법으로 투과율, 복원율 및 내화학성을 측정하고, 그 결과를 하기 표 1에 나타내었다.Using the polymer resin molds prepared in Examples 1 to 3 and Comparative Examples 1 to 3, the transmittance, recovery rate, and chemical resistance were measured in the following manner, and the results are shown in Table 1 below.
가) 투과율 - 상기 실시예 1 내지 3 및 비교예 1 내지 3에서 제조한 고분자 수지 몰드의 가시광선의 광흡수 스펙트럼(spectrum)을 측정하고, 400 ㎚에 있어서 광선 투과율을 측정하여 기재하였다.A) Transmittance-The light absorption spectrum of visible light of the polymer resin molds prepared in Examples 1 to 3 and Comparative Examples 1 to 3 was measured, and the light transmittance was measured and described at 400 nm.
나) 복원율 - 상기 실시예 1 내지 3 및 비교예 1 내지 3에서 제조한 고분자 수지 몰드의 수지표면에 평면압자를 10 g.f의 힘으로 5 초간 가압한후 평면압자를 제거하고 평면압자제거 10 초 후의 복원정도를 측정하여 기재하였다.B) Restoration rate-After pressurizing the planar indenter with the force of 10 gf for 5 seconds to the resin surface of the polymer resin molds prepared in Examples 1 to 3 and Comparative Examples 1 to 3, the planar indenter was removed and 10 seconds after the planar indenter was removed. The degree of restoration was measured and described.
다) 내화학성 - 아세톤에 상기 실시예 1 내지 3 및 비교예 1 내지 3에서 제조한 고분자 수지 몰드를 완전히 침적하고 7 일을 방치한 후 수지 몰드의 중량변화를 측정하였다. 초기 대비 중량의 변화비가 0~3 %인 경우 우수, 3~5 %인 경우 양호, 5 % 이상인 경우 불량으로 나타내었다.C) Chemical resistance-The polymer resin molds prepared in Examples 1 to 3 and Comparative Examples 1 to 3 were completely deposited on acetone, and the weight change of the resin molds was measured after being left for 7 days. When the ratio of weight change to initial stage is 0-3%, it is excellent, 3-5% is good, and when 5% or more, it is indicated as bad.
[표 1]TABLE 1
상기 표 1에 나타낸 바와 같이, 본 발명의 광경화형 수지 조성물을 이용하여 제조한 실시예 1 내지 3의 고분자 수지 몰드는 비교예 1 내지 3과 비교하여 투과율 및 복원율이 동등 수준 이상으로 나타났으며, 내화학성에 있어서는 매우 우수함을 확인할 수 있었다.As shown in Table 1, the polymer resin molds of Examples 1 to 3 prepared using the photocurable resin composition of the present invention showed that the transmittance and recovery rate were equal or more than those of Comparative Examples 1 to 3, It was confirmed that it was very excellent in chemical resistance.
도 1은 본 발명의 바람직한 일실시예에 따른 수지 몰드의 제조방법을 개략적으로 도시하는 단면도이다.1 is a cross-sectional view schematically showing a method of manufacturing a resin mold according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
101: 원판몰드 102a: 고분자 수지 용액101:
102b: 경화 고분자 수지 103: 플라즈마 처리면102b: cured polymer resin 103: plasma-treated surface
104: 배면지지체 105: 고분자 수지 몰드104: back support 105: polymer resin mold
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WO2011007979A2 (en) * | 2009-07-13 | 2011-01-20 | 주식회사 동진쎄미켐 | Photocurable resin composition containing fluorine and method for producing a resin mold using same |
WO2011016651A2 (en) * | 2009-08-07 | 2011-02-10 | 주식회사 동진쎄미켐 | Photocurable resin composition for imprint lithography and method for manufacturing an imprint mold using same |
WO2016048091A1 (en) * | 2014-09-25 | 2016-03-31 | 코오롱인더스트리 주식회사 | Optical sheet comprising nanopattern and method for manufacturing same |
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WO2011007979A2 (en) * | 2009-07-13 | 2011-01-20 | 주식회사 동진쎄미켐 | Photocurable resin composition containing fluorine and method for producing a resin mold using same |
WO2011007979A3 (en) * | 2009-07-13 | 2011-05-19 | 주식회사 동진쎄미켐 | Photocurable resin composition containing fluorine and method for producing a resin mold using same |
WO2011016651A2 (en) * | 2009-08-07 | 2011-02-10 | 주식회사 동진쎄미켐 | Photocurable resin composition for imprint lithography and method for manufacturing an imprint mold using same |
WO2011016651A3 (en) * | 2009-08-07 | 2011-06-09 | 주식회사 동진쎄미켐 | Photocurable resin composition for imprint lithography and method for manufacturing an imprint mold using same |
WO2016048091A1 (en) * | 2014-09-25 | 2016-03-31 | 코오롱인더스트리 주식회사 | Optical sheet comprising nanopattern and method for manufacturing same |
US10132962B2 (en) | 2014-09-25 | 2018-11-20 | Kolon Industries, Inc. | Optical sheet comprising nanopattern and method for manufacturing same |
CN111154050A (en) * | 2020-01-17 | 2020-05-15 | 中国科学院兰州化学物理研究所 | Polyether-ether-ketone photosensitive material and preparation method and application thereof |
CN111154050B (en) * | 2020-01-17 | 2020-12-08 | 中国科学院兰州化学物理研究所 | Polyether-ether-ketone photosensitive material and preparation method and application thereof |
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