KR20080055636A - Magnetoresistive element, magnetic head and magnetic memory - Google Patents

Abstract

A magneto resistive effect device, a magnetic head, and a magnetic memory device are provided to make the length in the core width direction of a first pinned layer longer than that in the core width direction of a reference pinned layer in order to improve asymmetry of wavelength of magnetic information. A magneto resistive effect device(10) comprises an antiferromagnetic layer(11), a first pinned layer(12), a reference pinned layer(14), and a free layer(16). A magnetizing direction(A) is fixed at the first pinned layer by the antiferromagnetic layer. The reference pinned layer is anti-parallel to the first pinned layer. A magnetizing direction(B) for the reference pinned layer is changed by an external magnetic field. The length in the core width direction of the first pinned layer is longer than that in the core width direction of the reference pinned layer.

Description

Magnetoresistive element, magnetic head and magnetic memory device MAGNETORESISTANCE DEVICE, MAGNETIC HEAD AND MAGNETIC MEMORY DEVICE}

The present invention relates to a magnetoresistive element used for regeneration in a thin film magnetic head.

The magnetoresistive effect head (hereinafter also referred to as "MR head") is a head using a magnetoresistive effect element (hereinafter also referred to as "MR element") in the regeneration unit. The MR head is a magnetic head which is advantageous for high recording density and miniaturization of the magnetic recording apparatus since the reproduction output does not depend on the relative speed between the magnetic recording medium and the magnetic head. In recent years, the main focus is a composite thin film magnetic head integrating a reproducing MR head and a recording inductive magnetic recording head.

As the MR element, a spin valve film mainly composed of a free layer, an intermediate layer, a pinned layer, and an antiferromagnetic layer is known. However, as shown in FIG. 1, in order to enhance external magnetic field resistance of the pinned layer, A laminated ferry consisting mainly of a free layer 106, an intermediate layer 105, a reference pinned layer 104, an intermediate layer 103, a first pinned layer 102, and an antiferromagnetic pinning layer 101. Ferri spin valve membranes are also known.

One of the structures aiming at high sensitivity to the structure (CIP structure) that flows current in the in-plane direction of the stack as the direction of current flow, in order to obtain a high resistance change, in a direction perpendicular to the stacking surface of the MR element. The structure which flows an electric current (CPP structure) is also employ | adopted.

In the case of the laminated ferri-type spin valve film, the MR head using the MR element generates a resistance change due to the angle between the magnetization of the free layer 106 and the magnetization of the reference pinned layer 104. In order to obtain the highest sensitivity in this MR head and to obtain a reproducing waveform having good up and down asymmetry, when the medium magnetic field does not enter, the magnetization of the free layer 106 is almost directed in the core width direction, and is directed upward or downward. When the magnetic field of the medium toward the side enters, it is important to make the magnetization of the free layer 106 incline in the direction of the element height.

By the way, in the MR head using the MR element, when the MR element is not a single magnetic domain, Barkhausen noise is generated, and the reproduction output greatly varies. In order to control the magnetic domain of the MR element, a high protective magnetic film represented by CoPt or the like, or a lamination film of an anti-ferromagnetic film and a ferromagnetic film represented by PdPtMn or the like is used as the magnetic domain control film. Or a structure in which an antiferromagnetic film is laminated on the MR element and provided, but the magnetic domain control film has a magnetization of the free layer to some extent in the core width direction when there is no medium magnetic field. There is also an effect to adjust.

On the other hand, in recent years, with the increase of the capacity of the magnetic disk device, the bit length and the track width on the medium have sharply narrowed. While the track width is narrowed, the length in the element height direction of the MR element is prescribed by processing such as polishing, and it is difficult to shorten it. For this reason, the aspect ratio of the length of the element height direction with respect to the track width direction of the MR element is increasing, which causes the magnetization of the free layer 106 to be easily directed in the element height direction.

As the magnetic field acting on the free layer 106, as shown by arrows A and B of FIG. 1, the reference pinned layer disposed in close proximity to the magnetic field A to the first pinned layer 102 in a distant position. Since the direction of the magnetic field B from the 104 is strong, the magnetic field in the element height direction increases in the free layer 106 without the medium magnetic field. This differential magnetic field also causes the magnetization of the free layer 106 to deviate from the core width direction. As indicated by arrow C in FIG. 1, when the magnetization of the free layer 106 is directed in the element height direction when the medium magnetic field does not enter, the vertical asymmetry of the reproduction waveform deteriorates, and the reproduction sensitivity deteriorates.

In order to solve this problem, the film thickness of the first pinned layer 102 and the saturation magnetic flux density are compared with the product of the film thickness of the reference pinned layer 104 and the saturation magnetic flux density (t _ref × Bs _ref ). A method of removing the magnetic fields of the reference pinned layer 104 and the first pinned layer 102 by increasing the product (t ₁ × Bs ₁ ) has been proposed (see Patent Document 1, for example).

In addition, in order to realize a low-resistance and highly sensitive spin valve type MR element, the length of the free layer in the core width direction is shortened compared to the length in the core width direction of the reference pinned layer and the first pinned layer. The structure is known (for example, refer patent document 2).

[Patent Document 1] Japanese Unexamined Patent Publication No. 2006-13430

[Patent Document 2] Japanese Unexamined Patent Publication No. 2005-167236

However, the method of increasing the (film thickness x saturation magnetic flux density) of the first pinned layer with respect to (film thickness x saturation magnetic flux density) of the reference pinned layer is such that the MR ratio decreases in material development. A problem arises.

In order to improve the up and down asymmetry of the reproduced waveform, it is considered to reduce the element height with respect to the track width (core width) of the MR element. However, as described above, the length of the element height direction of the MR element may be processed by polishing or the like. Since it is limited to, it is very difficult to process smaller than the current state.

Therefore, the present invention provides a magnetoresistive element capable of matching the direction of magnetization of a free layer when there is no medium magnetic field with a simple configuration using a conventional processing technique in the core width direction, and a method of manufacturing the same. It is a subject to offer.

In order to solve the said subject, the length of the core width direction of the 1st pinned layer away from a free layer is set longer than the length of the core width direction of the reference pinned layer which adjoins a free layer. In addition, in this specification and a claim, when making the length of the core width direction of a 1st pinned layer longer than the length of the core width direction of an upper reference pinned layer, it originates in the taper shape which inevitably arises in normal etching processing. It does not mean the difference in fine length, but it means that it is set to a different length in design and that there exists a difference in length as a step also in the product after manufacture.

Specifically, the magnetoresistive element

(a) an antiferromagnetic layer,

(b) a first pinned layer having a direction of magnetization fixed by the antiferromagnetic layer,

(c) a reference pinned layer that is antiferromagnetically coupled to the first pinned layer and that is antiparallel to the first pinned layer;

(d) a free layer in which the direction of magnetization with respect to the reference pinned layer is changed by an external magnetic field,

(e) The length of the core width direction of the first pinned layer is longer than the length of the core width direction of the reference pinned layer.

In a preferable structural example, the value of 1/2 of the difference of the length in the core width direction of a said 1st pinned layer and a reference pinned layer is a range of 2 nm-5 nm.

In another configuration example, the difference in the length in the core width direction of the first pinned layer and the reference pinned layer is larger than the difference in the length in the core width direction of the reference pinned layer and the free layer.

Preferably, each of the lengths in the core width direction of the first pinned layer and the reference pinned layer is a magnetic field from the first pinned layer acting on the free layer and a magnetic field from the reference layer acting on the free layer. Is set to the length to cancel.

In a second aspect, a method of manufacturing a magnetoresistive element

(a) forming a laminate by laminating an antiferromagnetic film, a first pinned layer, a first intermediate layer, a reference pinned layer, a second intermediate layer, and a free layer in this order;

(b) On the opposite surface where the laminate faces any storage medium, the length along the track width direction of the storage medium of the first pinned layer is longer than the length along the track width direction of the reference pinned layer. And a step of processing the laminate.

By the above configuration and method, it is possible to improve the vertical asymmetry of the reproduction waveform of the magnetic information read out from the recording medium.

2 is a schematic configuration diagram of a magnetoresistive effect (MR) element according to one embodiment of the present invention. The MR element 10 is a laminate in which an antiferromagnetic film 11, a first pinned layer 12, an intermediate layer 13, a reference pinned layer 14, an intermediate layer 15, and a free layer 16 are laminated in this order. It includes a ferri spin valve structure, and the length in the core width direction of the first pinned layer 12 is longer than the length in the core width direction of the reference pinned layer 14 adjacent to the free layer 16.

Here, as shown in FIG. 2, the core width direction refers to a direction parallel to the track width of the medium on the surface of the medium facing the magnetic recording medium at the time of reproduction. In contrast, the element height direction refers to the height of the element in the direction perpendicular to the magnetic recording medium at the time of reproduction. 2, the magnetic domain control film | membrane, such as a hard layer, is abbreviate | omitted for convenience of illustration.

The direction of magnetization of the first pinned layer 12 and the reference pinned layer 14 is fixed by the antiferromagnetic layer 11 so that the magnetization of the first pinned layer 12 and the reference pinned layer 14 is anti-parallel. Achieve. As a result, net magnetization of the first pinned layer 12 and the reference pinned layer 14 is suppressed, and exchange coupling between the antiferromagnetic layer 11 is increased to enhance the magnetization adhesion. .

In the example of FIG. 2, the length in the core width direction of the first pinned layer 12 is 2a larger than the length in the core width direction of the reference pinned layer 14. By setting it as such a structure, the volume of the 1st pinned layer 12 increases compared with the conventional MR element shown in FIG. That is, the magnetic field A applied from the free layer 16 to the first pinned layer 12 can be made larger than the magnetic field B applied from the reference pinned layer 14 layer to the free layer 16, and the free layer 16 can be made larger. It is possible to cancel (cancel) the influence of the magnetic field A and the magnetic field B in the. As a result, the magnetic field in the element height MRh direction with respect to the free layer 16 is reduced, and when the external magnetic field is absent as shown by arrow C, the protection of the free layer 16 in the core width direction is almost always performed. It is possible.

At the time of regeneration, the sense current flows in the stacking direction, and the direction of magnetization of the free layer 16 with respect to the reference pinned layer 14 is changed by the direction of the magnetic field from the magnetic medium, and the magnetic resistance is changed depending on the relative direction. Change. This change in magnetoresistance is detected as a change in voltage occurring at both ends of the spin valve. However, the magnetization direction of the free layer 16 is matched in the core width direction in the absence of an external magnetic field. This has been improved.

In this configuration, since the influences of the magnetic fields A and B are canceled in the free layer 16, the length of the core width direction of the first pinned layer 12 and the reference pinned layer 14 may be adjusted only. The film thickness and the saturation magnetic flux density of the one pinned layer 12 and the reference pinned layer 14 can be designed freely. In addition, since a material having the best MR ratio or the like can be selected, high regeneration output can be obtained.

In the example of FIG. 2, the length of the core width direction of the first pinned layer 12 and the antiferromagnetic film 11 is the same, and the length of the core width direction of the reference pinned layer 14 and the free layer 16 is the same. As the magnetic field B from the reference pinned layer 14 acting on the free layer 16 and the magnetic field A from the first pinned layer 12 are canceled, the reference pinned layer 14 and the first pinned layer 12 are offset. Since the difference should be provided in the length of the core width direction of the (), the relationship between the length of the core width direction of the first pinned layer 12 and the antiferromagnetic film 11, or the free layer 16 and the reference pinned layer 14 The relationship between the lengths in the core width direction of the s) is not particularly limited. First of all, the difference in the length in the core width direction of the first pinned layer 12 and the reference pinned layer 14 is preferably larger than the difference in the length in the core width direction of the reference pinned layer 14 and the free layer 16. Do.

FIG. 3 is a graph of simulation results showing an improvement effect of vertical asymmetry of the reproduced waveform by employing the configuration of FIG. 2. In FIG. 2, when a half of the difference between the length in the core width direction of the first pinned layer 12 and the length in the core width direction of the reference pinned layer 14 is a, the value of a is set to several nm. It can be seen that the up and down asymmetry is greatly improved.

Example 1

4 is a schematic perspective view showing Configuration Example 1 in which the MR device of the present invention is applied to a CPP structure. In the drawing, the X-axis direction is the core width or track width direction, the Y-direction is the element height direction, and the XZ plane is the ABS (air bearing surface) surface of the slider.

In this example, the length of the core width direction of the first pinned layer 12 is longer than the length of the core width direction of the reference pinned layer 14, and the antiferromagnetic (pinning) layer 11 and the first pinned layer 12 The length in the core width direction and the length in the core width direction of the reference pinned layer 14 and the free layer 16 are the same, respectively. Further, the magnetic domain control film 17 is provided on both sides along the track widths of the laminated portions of the reference pinned layer 14 and the free layer 16.

5A to 5E are cross-sectional views of the medium facing surface showing the manufacturing process of the MR element shown in FIG. 4. First, as shown in FIG. 5A, a shield and / or an electrode terminal 18a are formed on a substrate not shown, and a laminated ferri spin valve is formed thereon. That is, the antiferromagnetic film 11, the first pinned layer 12, the intermediate layer 13, the reference pinned layer 14, the intermediate layer 15, and the free layer 16 are sequentially formed by sputtering. We form.

The antiferromagnetic film 11 is, for example, IrMn, PdPtMn, or the like. As the first pinned layer 12, the reference pinned layer 5, and the free layer 7, a single layer or a laminated film such as NiFe, CoFeB or the like is used. The intermediate layer 13 between the first pinned layer 12 and the reference pinned layer 14 is a nonmagnetic coupling layer that magnetically couples the first pinned layer 12 and the reference pinned layer 14, for example. Ru. The intermediate layer 15 between the reference pinned layer 14 and the free layer 16 uses an insulating film such as Al ₂ O ₃ or MgO, or a low resistance conductive film such as Cu. When an insulating film is used, the MR element is a tunnel junction type GMR element. When a conductive film is used, it is a CPP-GMR element. The shield and / or electrode terminal 18a is a soft magnetic metal film such as NiFe when the shield also serves as an electrode terminal, and a soft magnetic metal film such as NiFe and Cu or the like when the shield does not serve as an electrode terminal. It becomes a laminated film of a nonmagnetic metal film.

On this lamination, a resist film is applied and patterned into a desired shape to form a resist mask 21.

Next, as shown in FIG. 5B, the resist mask 21 is used to etch until at least most of the reference pinned layer 14 is processed by ion milling or the like. In the example of FIG. 5B (a), the free layer 16, the intermediate layer 15, the reference pinned layer 14, and the intermediate layer 13 are etched until the first pinned layer 12 is exposed. At this time, as shown to (b) of FIG. 5B, a part of the reference pinned layer 14 and the intermediate | middle layer 13 may remain, and as shown to (c) of FIG. 5B, the 1st pinned layer 12 is shown. Even if part of is etched, the effects of the present invention can be obtained.

Next, as shown in Figure 5c, to leave the resist mask 21, and forming the insulating film 23 such as Al ₂ O _3, for example by sputtering. In addition, in FIG. 5C, illustration of the insulating film 23 deposited on the resist mask 21 is omitted.

Next, as shown in FIG. 5D, the magnetic domain control film 17 and the nonmagnetic insulating film 25 are sequentially formed, leaving the resist mask 21. Here, illustration of the magnetic domain control film 17 and the nonmagnetic insulating film 25 deposited on the resist mask 21 is omitted. As the magnetic domain control film 17, a lamination film of a high protective magnetic film such as CoCrPt or an antiferromagnetic film of IrMn or PdPtMn and a soft magnetic film such as NiFe or CoFeB is used. Al ₂ O ₃ or the like is used as the nonmagnetic insulating film 25.

Next, as shown in FIG. 5E, the resist 21 is removed by lift off, and the shield / electrode terminal 18b is formed. Like the shield / electrode terminal 18a, the shield / electrode terminal 18b also becomes a soft magnetic metal film such as NiFe when the shield also serves as an electrode terminal, and when the shield does not serve as an electrode terminal, It becomes a laminated film of a magnetic metal film and a nonmagnetic metal film such as Cu. In the case of the former (the shield also serves as an electrode terminal), the soft magnetic metal film is formed by a plating method or a vapor deposition method. In the latter case (the shield does not serve as an electrode terminal), the nonmagnetic metal film is formed by plating, vapor deposition, sputtering, or the like.

Example 2

6A shows another example of application of the MR element of the present invention to a CPP structure. FIG. 6A is a schematic perspective view and FIG. 6B is a sectional view at a medium facing surface. FIG. In this application example, the magnetic domain control film l7 is not disposed on both sides of the core width direction of the free layer 16 and the reference pinned layer 14, but is disposed above the free layer 16. same. The magnetic domain control film 17 is magnetized in the track width direction, and the free layer 16 of the MR element is also magnetized in the track width direction by the magnetic field generated here.

The fabrication method is almost the same as in FIGS. 5A to 5E except that the magnetic domain control film 17 is laminated and deposited for the first time. That is, the shield / electrode terminal 18a, the laminated ferry spin valve, and the magnetic domain control film 17 are sequentially volumened on a substrate not shown in the drawing, and a resist mask having a predetermined shape is formed at a predetermined place. . As described above, the laminated ferritic spin valve includes an antiferromagnetic (pinning) film 11, a first pinned layer 12, an intermediate layer 13 such as Ru, a reference pinned layer 14, an intermediate layer 15, and a free It is a stack of layers 16. High protective magnetic films such as magnetic domain control film 17, CoCrPt, and antiferromagnetic films such as IrMn and PdPtMn are used.

Next, as in FIG. 5B, the respective layers 11 to 16 and the magnetic domain control film 17 constituting the stacked ferry spin valve are etched, and an insulating film 23 is formed on the etched surface as in FIG. 5C. The insulating film 23 is formed thicker than that in Fig. 5C. The insulating film 23 and the magnetic domain control film 17 in FIG. 5D are the same as the insulating film. Finally, similarly to FIG. 5E, the resist mask 21 is removed to form a shield / electrode terminal 18b. The material of each layer is the same as that of the application example 1.

Example 3

7 is a schematic perspective view showing another application example in which the MR device of the present invention is applied to a CPP structure. In this application example 3, the length of the core width direction of the first pinned layer 12 is longer than the length of the core width direction of the reference pinned layer 14 and is shorter than the length of the core width direction of the antiferromagnetic film 11. It is. The magnetic domain control film 17 is located on both sides of the free layer 16, the reference pinned layer 14, and the first pinned layer 12 in the core width direction.

8A to 8F are cross-sectional views of a medium facing surface (ABS surface) showing the manufacturing process of the MR element of FIG. 7. First, in FIG. 8A, an intermediate layer 13 such as a shield / electrode terminal 18a and a laminated ferry spin valve, that is, an antiferromagnetic film 11, a first pinned layer 12, Ru, or the like, is placed on a substrate not shown in the figure. ), The reference pinned layer 14, the intermediate layer 15, and the free layer 16 are sequentially formed. A resist is applied on the laminated ferry spin valve and patterned into a desired shape to form a resist mask 21.

Next, as shown in FIG. 8B, the free layer 16, the intermediate layer 15, the reference pinned layer 14, the intermediate layer 13, and the first pinned layer (eg, ion milling or the like using the resist mask 21). 12) is etched. In this etching, a part of the first pinned layer 12 may remain, or part or all of the antiferromagnetic film 11 may be etched or a part of the shield / electrode terminal 18a may be etched. You can get it.

Next, as shown in FIG. 8C, the resist mask 21 is removed, and a new resist is applied and patterned to form a resist mask 31 having a shorter length in the core width direction than the resist mask 21. The free layer 16, the intermediate layer 15, the reference pinned layer 14, and the intermediate layer 13 are etched by ion milling or the like using the resist mask 31. Here, the etching of the intermediate layer 13 is not essential, and in etching, a part of the reference pinned layer 14 may remain, and even if a part of the first pinned layer 12 is etched, the effect of the present invention can be obtained. Can be.

Next, as shown in Figure 8d, while leaving the resist mask 31, the film formation of the insulating film 23 such as Al ₂ O _3. The illustration of the insulating film 23 deposited on the resist mask 31 is omitted.

Next, as shown in FIG. 8E, the magnetic domain control film 17 and the nonmagnetic insulating film 25 are sequentially formed with the resist mask 31 remaining.

Next, as shown in FIG. 8F, the resist mask 31 is removed by lift-off, and the shield / electrode terminal 18b is formed. In addition, the material of each layer is the same as that of Example 1.

Example 4

9 is a schematic perspective view showing a configuration example in which the MR element of the present invention is applied to a CIP structure. As in the third embodiment, the length in the core width direction of the first pinned layer 12 is longer than the length in the core width direction of the reference pinned layer 14, and is longer than the length in the core width direction of the antiferromagnetic film 11. short. Since the direction of the current flows in the in-plane direction of the lamination, the conductive layer 32 is provided on both sides of the free layer 16, the reference pinned layer 14, and the core width direction of the first pinned layer 12. The insulating layer 40 is inserted between the ferromagnetic layer 11 and the shield / electrode terminal 18a.

10A and 10B are cross-sectional views of a medium facing surface illustrating a manufacturing process of the MR element of FIG. 9. The insulating layer 40 is formed on the shield / electrode terminal 18a, and respective layers constituting the laminated ferry spin valve layer are formed. As in FIGS. 8A to 8C, the formation of the resist mask and the etching by ion milling are repeated twice, and the length of the core width direction of the first pinned layer 12 is larger than the length of the core width direction of the reference pinned layer 14. The laminated ferry spin valve is processed into a shape that is longer and shorter than the length of the core width direction of the antiferromagnetic layer 11. Thereafter, as shown in FIG. 10A, while maintaining the resist mask, a nonmagnetic conductive film 32 and a magnetic domain control film 17 are formed on the etching surface, and the resist mask is removed by lift-off. .

Next, as shown in FIG. 10B, the nonmagnetic insulating film 25 and the shield / electrode terminal 18b are sequentially formed on the entire surface. In addition, the material of each layer is the same as that of Example 1.

As described above, the reproducing head using the MR element of the present invention can improve the up and down asymmetry of the reproducing waveform even in the fine element corresponding to the high recording density. As a result, the yield is improved and it is possible to obtain a reproduction signal with good sensitivity.

Fig. 11 is a plan view showing a main portion of a magnetic disk device (magnetic storage device) including a magnetic head in which the MR element of the embodiment of the present invention is applied to a reproduction head. The magnetic disk device 90 includes a magnetic recording medium 93 accommodated in the housing 91 and a magnetic head 50 that moves on the magnetic recording medium 93 to record and reproduce information. The magnetic head 50 is a hybrid thin film magnetic head in which the magnetoresistive effect reproduction element 10 and the inductive magnetic recording element 40 are integrated. In this case, the inductive magnetic recording element 40 is formed integrally by, for example, forming a thin film magnetic pole above the MR element in the Z-axis direction of FIGS. 4, 6, and 7.

The magnetic head 50 is supported at the tip of the suspension 96 extending from the arm 95. The magnetic recording medium 93 is fixed to the hub 92, and the hub 92 is rotated by being driven by a spindle not shown. The arm 95 is moved in the radial direction of the magnetic recording medium 93 by the actuator 94.

As shown in FIG. 2, the MR reproducing element 10 of the magnetic head 50 has a length in the core width direction of the first pinned layer 12, that is, in the track width direction of the magnetic recording medium 93. It is set longer than the length of the core width direction of 14), and it is designed so that the magnetic field from the reference pinned layer 14 which acts on the free layer 16, and the magnetic field from the 1st pinned layer 12 may cancel. Therefore, when the magnetic field from the magnetic recording medium 93 does not enter, the magnetization of the free layer 16 is matched in the core width direction, so that the up and down asymmetry of the reproduction waveform during reproduction is satisfactorily improved.

Finally, the following supplementary notes are disclosed with respect to the above description.

(Supplementary Note 1) Semi-ferromagnetic layer,

A first pinned layer having a direction of magnetization fixed by the antiferromagnetic layer,

A reference pinned layer which is antiferromagnetically coupled to the first pinned layer and which is antiparallel to the first pinned layer,

And a free layer in which the direction of magnetization with respect to the reference pinned layer is changed by an external magnetic field, wherein the length of the core width direction of the first pinned layer is longer than the length of the core width direction of the reference pinned layer. Magnetoresistive effect element.

(Supplementary Note 2) The magnetoresistive element according to Supplementary Note 1, wherein a value of 1/2 of the difference in the length in the core width direction of the first pinned layer and the reference pinned layer is in a range of 2 nm to 5 nm.

(Supplementary Note 3) The magnetic resistance according to Supplementary Note 1, wherein a difference in the length in the core width direction of the first pinned layer and the reference pinned layer is larger than a difference in the length in the core width direction of the reference pinned layer and the free layer. Effect element.

(Supplementary Note 4) Each of the lengths in the core width direction of the first pinned layer and the reference pinned layer is a magnetic field from the first pinned layer acting on the free layer and a magnetic field from the reference layer acting on the free layer. The magneto-resistive effect element of appendix 1 characterized by the offset length.

(Supplementary Note 5) The magnetoresistive element according to Supplementary Note 1, further comprising an intermediate layer of low resistance located between the free layer and the reference pinned layer.

(Supplementary Note 6) The magnetoresistive element according to Supplementary Note 1, further comprising an intermediate layer located between the free layer and the reference pinned layer to form a ferromagnetic tunnel junction.

(Appendix 7) Magnetoresistive effect element,

An electrode terminal and / or a shield sandwiching the magnetoresistive element, wherein the magnetoresistive element is

A first pinned layer in which the direction of magnetization is fixed,

A reference pinned layer in which a direction of magnetization is fixed in a direction parallel to the first pinned layer,

And a free layer in which the direction of magnetization with respect to the reference pinned layer is changed by an external magnetic field, wherein the length of the core width direction of the first pinned layer is longer than the length of the core width direction of the reference pinned layer. Magnetic head.

(Supplementary Note 8) The magnetic head according to Supplementary note 7, further comprising an inductive recording element provided integrally with the magnetoresistive effect element.

(Supplementary Note 9) The magnetic head according to Supplementary Note 7 or Supplementary Note 8, further comprising a magnetic domain control film for controlling the magnetic domain of the magnetoresistive element.

(Supplementary note 10) The magnetic head according to supplementary note 9, wherein the magnetic domain control film is in at least one direction among a high protective magnetic film and an antiferromagnetic film.

(Supplementary Note 11) The magnetic head according to Supplementary Note 9, wherein the magnetic domain control film is located on both sides of the core width direction of the magnetoresistive element.

(Supplementary Note 12) The magnetic head according to Supplementary Note 9, wherein the magnetic domain control film is located on the free layer of the magnetoresistive element.

(Appendix 13) recording medium,

The magnetic head according to supplementary notes 7 or 8,

And a head driver for driving the magnetic head relative to the recording medium, wherein the magnetic head detects a magnetic signal of the recording medium.

(Supplementary Note 14) a step of forming a laminate by laminating an antiferromagnetic film, a first pinned layer, a first intermediate layer, a reference pinned layer, a second intermediate layer, and a free layer in this order;

On the opposite surface where the laminate faces an arbitrary storage medium, the laminate such that the length along the track width direction of the storage medium of the first pinned layer is longer than the length along the track width direction of the reference pinned layer. Method of manufacturing a magnetoresistive element, characterized in that it comprises a step of processing.

1 is a diagram showing a stacked ferry spin valve structure of a conventional MR element.

Fig. 2 is a schematic perspective view showing the stacked ferry spin valve structure of the MR element according to the first embodiment of the present invention.

3 is a graph showing an effect of improving the vertical asymmetry of the reproduced waveform obtained by the structure of FIG.

4 is a schematic perspective view of an application example 1 of the MR element of the present invention to a CPP structure;

FIG. 5A is a manufacturing process diagram of the MR element of FIG. 4 (No. 1). FIG.

FIG. 5B is a manufacturing process chart (No. 2) of the MR element of FIG. 4.

FIG. 5C is a manufacturing process diagram of the MR element of FIG. 4 (part 3). FIG.

5D is a manufacturing process diagram of the MR element of FIG. 4 (No. 4).

FIG. 5E is a manufacturing process diagram of the MR element of FIG. 4 (No. 5).

Fig. 6 is a diagram showing Application Example 2 to the CPP structure of the MR element of the present invention.

Fig. 7 is a diagram showing Application Example 3 to the CPP structure of the MR element of the present invention.

FIG. 8A is a manufacturing process diagram (No. 1) of the MR element of FIG. 7. FIG.

8B is a manufacturing process chart (No. 2) of the MR element of FIG. 7.

FIG. 8C is a manufacturing process chart (No. 3) of the MR element of FIG. 7.

FIG. 8D is a manufacturing process chart (No. 4) of the MR element of FIG. 7.

FIG. 8E is a manufacturing process diagram of the MR element of FIG. 7 (No. 5).

8F is a manufacturing process diagram of the MR element of FIG. 7 (No. 6).

Fig. 9 shows an example of application of the MR element of the present invention to a CIP structure.

10A is a manufacturing process diagram (No. 1) of the MR element of FIG. 9.

FIG. 10B is a manufacturing process chart (No. 2) of the MR element of FIG. 9.

Fig. 11 is a diagram showing a main portion of a magnetic disk device including a magnetic head using the MR element of the embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

1O: MR element (magnetic resistance effect element)

11: anti-ferromagnetic film

12: first pinned layer

14: reference pinned layer

16: free layer

17 magnetic domain control layer

18a, 18b: shield and / or electrode terminals

23: insulating film

25: nonmagnetic insulating film

32: nonmagnetic conductive film

40: inductive recording element

50: magnetic head (composite thin film magnetic head)

90: magnetic disk device (magnetic storage device)

Claims (10)

Anti-ferromagnetic layers, A first pinned layer in which the direction of magnetization is fixed by the antiferromagnetic layer, A reference pinned layer which is antiferromagnetically coupled to the first pinned layer and which is antiparallel to the first pinned layer, And a free layer in which the direction of magnetization with respect to the reference pinned layer is changed by an external magnetic field, wherein the length of the core width direction of the first pinned layer is longer than the length of the core width direction of the reference pinned layer. Magnetoresistive effect element. The method of claim 1, The magnetoresistive element of Claim 1 whose value which is 1/2 of the difference of the length of the core width direction of a said 1st pinned layer and a reference pinned layer is a range of 2 nm-5 nm. The method of claim 1, The difference in the length in the core width direction of the first pinned layer and the reference pinned layer is larger than the difference in the length in the core width direction of the reference pinned layer and the free layer. The method of claim 1, Each length in the core width direction of the first pinned layer and the reference pinned layer is such that the magnetic field from the first pinned layer acting on the free layer and the magnetic field from the reference layer acting on the free layer cancel each other. Magneto-resistive effect element which is characterized by the above-mentioned. The method of claim 1, A magnetoresistive element comprising a middle layer of low resistance located between said free layer and said reference pinned layer. The method of claim 1, And an intermediate layer positioned between the free layer and the reference pinned layer to form a ferromagnetic tunnel junction. Magnetoresistive effect element, An electrode terminal and / or a shield sandwiching the magnetoresistive element, wherein the magnetoresistive element is A first pinned layer in which the direction of magnetization is fixed, A reference pinned layer in which a direction of magnetization is fixed in a direction parallel to the first pinned layer, And a free layer in which the direction of magnetization with respect to the reference pinned layer is changed by an external magnetic field, wherein the length of the core width direction of the first pinned layer is longer than the length of the core width direction of the reference pinned layer. Magnetic head. The method of claim 7, wherein And an inductive recording element integrally provided with said magnetoresistive effect element. Recording media, The magnetic head according to claim 7 or 8, And a head driver for driving the magnetic head relative to the recording medium, wherein the magnetic head detects a magnetic signal of the recording medium. Stacking an antiferromagnetic film, a first pinned layer, a first intermediate layer, a reference pinned layer, a second intermediate layer, and a free layer in this order to form a laminate; On the opposite surface where the laminate faces an arbitrary storage medium, the laminate such that the length along the track width direction of the storage medium of the first pinned layer is longer than the length along the track width direction of the reference pinned layer. Method of manufacturing a magnetoresistive element, characterized in that it comprises a step of processing.

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