KR20070118484A - Semiconductor manufacturing apparatus and method for supplying gas to the apparatus - Google Patents

Abstract

A semiconductor manufacturing apparatus and a method for supplying a gas to the same are provided to reduce a manufacturing cost thereof by performing a substrate heating process and a process gas heating process only with one heat unit. A supporting member(120) is formed in an inside of a process chamber(110) in order to support a substrate. The supporting member includes a heating member(124) for heating the substrate. A gas supply member(140) is formed to supply a gas to the process chamber. The gas supply member includes a gas supply line(144) having a heating part(146) for heating the gas by using the heating member. The heating part is formed at a lower part of the heating member. The heating part has a shape arranged in a zigzag pattern on a horizontal line.

Description

Semiconductor manufacturing apparatus and method for supplying gas to said apparatus {SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR SUPPLYING GAS TO THE APPARATUS}

1 is a configuration diagram of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a perspective view of the support member and the gas supply member shown in FIG. 1.

3 is a perspective view showing a gas supply member according to another embodiment of the present invention.

Figure 4 is a perspective view showing a gas supply member according to another embodiment of the present invention.

5 is a perspective view showing a gas supply member according to another embodiment of the present invention.

* Description of Signs of Major Parts of Drawings *

100: semiconductor manufacturing apparatus

110: process chamber

120: support member

130: shower head

140: gas supply member

150: high frequency applicator

The present invention relates to a semiconductor manufacturing apparatus and a method for supplying gas to the apparatus, and more particularly, to a semiconductor manufacturing apparatus and a method for supplying a process gas into a process chamber for performing a semiconductor manufacturing process.

The semiconductor manufacturing process repeats the photo, developing, deposition, polishing, etching, ashing, cleaning, and drying processes on the wafer. It is a process for producing a semiconductor integrated circuit chip by performing a continuous and continuous. Among them, a process of forming a thin film on a wafer such as a deposition process, a plasma processing process of processing a wafer by generating a plasma such as a dry etching process, and an ashing process may be performed in a process chamber sealed from an external environment. After accommodating the wafer, the process is performed by supplying a predetermined process gas into the process chamber.

For example, a semiconductor manufacturing apparatus that performs an ashing process includes a process chamber, a support member, a shower head, and a gas supply member. The process chamber has a space therein for performing a wafer processing process. The process chamber is sealed to the outside during the process. The support member supports the wafer inside the process chamber. The support member is provided with a heating member for heating the substrate loaded during the process to the process temperature. The shower head is provided above the inside of the process chamber, and receives a plurality of process gases from the gas supply member to inject the process gas onto the processing surface of the substrate.

The gas supply member has a supply pipe for supplying a process gas from the gas supply source to the shower head. At this time, the supply pipe is provided with a heater for heating the process gas to a predetermined process temperature before the process gas reaches the shower head. The heater heats the process gas moving inside the supply pipe.

The semiconductor manufacturing apparatus having the above-described structure is provided with a heater for heating the process gas and a support member, and a plurality of heating means such as a heating member for heating the substrate. A semiconductor manufacturing apparatus having a plurality of heating means has a complicated structure and an increase in manufacturing cost. In addition, an increase in the number of heating means increases an element to be maintained by the operator, and increases the power consumption of the apparatus.

SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide a semiconductor manufacturing apparatus that performs heating of a substrate and a process gas by one heating means, and a method of supplying gas to the semiconductor manufacturing apparatus.

In addition, an object of the present invention is to provide a semiconductor manufacturing apparatus that reduces manufacturing costs and a method of supplying gas to the semiconductor manufacturing apparatus.

It is also an object of the present invention to provide a semiconductor manufacturing apparatus which reduces the power usage of the apparatus and a method for supplying gas to the semiconductor manufacturing apparatus.

The semiconductor manufacturing apparatus according to the present invention for achieving the above object is a support chamber having a processing chamber, a heating member for supporting a substrate in the process chamber, and heating the substrate during the process, and supplying gas to the process chamber Including a gas supply member, wherein the gas supply member includes a gas supply line provided with a heating unit is disposed so that the gas moving therein is heated by the heating member.

According to an embodiment of the present invention, the heating part is provided below the heating member in the support member, and has a shape arranged in a zigzag shape on a horizontal line.

According to another embodiment of the present invention, the heating unit is provided inside the support member, and gradually from the edge region of the heating member toward the central region of the heating member with respect to the center of the heating member at the lower portion of the heating member. It has a shape that is wound while having a small radius.

According to another embodiment of the present invention, the heating unit is provided inside the support member, and from the central region of the heating member to the edge region of the heating member with respect to the center of the heating member at the lower portion of the heating member. It has a shape that is gradually wound with a larger radius.

According to another embodiment of the present invention, the heating part is provided inside the support member, and has a coil shape that surrounds the circumference of the heating member a plurality of times.

Gas supply method according to the present invention for achieving the above object to process the substrate by supplying a heated gas into the process chamber for performing a semiconductor manufacturing process, the heating of the gas is a substrate accommodated in the process chamber during the process It is made by a heating member for heating.

According to an embodiment of the present invention, the heating member is provided in the support member for supporting the substrate, and the gas passes through the periphery of the heating member in the support member.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the present invention to those skilled in the art will fully convey. Portions denoted by like reference numerals denote like elements throughout the specification.

In the following embodiments, an ashing process apparatus for removing the photoresist remaining on the processing surface of the substrate W will be described as an example. However, the present invention can be used in any semiconductor manufacturing apparatus for processing a substrate using a process gas. The apparatus of the present invention can be used in both etching process equipment and deposition process equipment.

(Example)

The semiconductor manufacturing apparatus 100 according to the present invention has a process chamber 110, a support member 120, a shower head 130, and a gas supply member 140. The process chamber 110 provides a space for performing a semiconductor manufacturing process therein.

One side of the process chamber 110 is provided with a substrate entrance 112 through which the substrate W enters and exits. The other side of the process chamber 110 is provided with an outlet 116. The outlet 116 discharges the gas in the process chamber 110 to the outside. The exhaust line 118 is connected to the outlet 116. The exhaust line 118 discharges the gas in the process chamber 110 to the outside. The suction member 118a is installed on the exhaust line 118. The suction member 118a is provided to control the pressure inside the process chamber 110 and to exhaust the process chamber 110. As the suction member 118a, a vacuum pump may be used. The suction member 118a forcibly discharges gas in the process chamber 110 to reduce the pressure inside the process chamber 110. In addition, the suction member 118a exhausts reaction by-products generated in the process chamber 110 during the process.

The support member 120 includes a body 122 and a heating member 124. The body 122 is installed below the process chamber 110. Body 122 has a generally cylindrical shape. The body 122 is installed to surround side and bottom surfaces of the heating member 124. The body 122 is made of a material having excellent heat resistance so as not to be deformed by heat generated from the heating member 124.

The heating member 124 heats the loaded substrate W during the process. In one embodiment, the heating member 124 is fixed to the upper portion of the body 122. The heating member 124 has a top surface in contact with the bottom surface of the substrate (W) during the process. The heating member 124 is provided with at least one heating coil (not shown) that generates heat by receiving electric power.

The shower head 130 is provided above the process chamber 110. The shower head 130 injects the process gas to the processing surface of the substrate (W) during the process. The showerhead 130 has a housing 132 and an electrode plate 134. The housing 132 has a generally cylindrical shape. The electrode plate 134 is installed below the housing 132. The electrode plate 134 has a lower surface facing the processing surface of the substrate W during the process. The electrode plate 134 is formed with injection holes 134a through which the process gas introduced into the housing 132 is injected.

The gas supply member 140 supplies at least one process gas to the shower head 130. The gas supply member 140 has a gas supply source 142 and a gas supply line 144. The gas source 142 stores the process gas. The gas supply line 144 supplies the process gas from the gas supply source 142 to the shower head 130. The gas supply line 144 is provided with a heating unit 146. The heating part 146 is provided inside the support member 120 and is disposed around the heating member 124. The gas supply line 144 receives the inlet portion 144a through which the gas is introduced from the gas supply source 142 to the heating portion 146 around the heating portion 146 and the gas heated by the heating portion 146. It is divided with the supply unit (144b) for supplying to 130. Here, the process gas may be an ashing gas for removing the photoresist remaining on the surface of the substrate W. Alternatively, the process gas may be a reaction gas for forming a thin film on the substrate (W). Alternatively, the process gas may be an inert gas for purging the process chamber 110.

The heating unit 146 is provided on the gas supply line 144. The heating unit 146 is a part of the gas supply line 144 where the process gas is heated by the heat generated from the heating member 124. The heating part 146 is provided inside the support member 120. The heating unit 144 is installed along the peripheral area of the heating member 124. Referring to FIG. 2, the heating tube 146 has a shape disposed in a zigzag shape on a horizontal line at the bottom of the heating part ash 124. This is to increase the area facing the heating member 124 to effectively receive heat generated from the heating member 124.

Or, referring to Figure 3, the semiconductor manufacturing apparatus 200 according to another embodiment of the present invention is provided in the lower portion of the heating member 224, the heating unit 246 having a coil shape wound in an annular shape on the horizontal line Have That is, the heating unit 246 is provided below the heating member 224. The heating unit 246 is wound to have a gradually smaller radius from the edge region of the heating member 224 toward the center region of the heating member 224 with respect to the center of the lower surface of the heating member 224. Or, referring to Figure 4, as another embodiment of the present invention, the heating unit 346 of the heating member 324 from the central region of the heating member 324 with respect to the center of the lower surface of the heating member 324 It is wound to have a larger radius towards the edge area.

Alternatively, referring to FIG. 5, the semiconductor manufacturing apparatus 400 according to another exemplary embodiment of the present invention has a heating unit 446 having a shape wound around the heating member 424 a plurality of times. That is, the heating unit 446 may have a plurality of coil shapes wound on different lines along the circumference of the heating member 424.

The heating unit according to the embodiments described above is formed to effectively receive heat generated from the heating member, and thus the shape of the heating unit may be variously changed and modified.

The high frequency applicator 150 supplies energy for generating a plasma inside the process chamber 110. For example, the high frequency applicator 150 applies high frequency power to the electrode plate 134 of the shower head 130.

In this embodiment, the gas supply member 140 is provided with a gas supply line 144 to supply a plurality of process gases as an example, but the gas supply member 140 includes a plurality of gas supply lines 144. ) May be provided. The gas supply member having a plurality of gas supply lines may be properly disposed along the periphery of the heating member 124 to move the inside of the heating part by heat generated from the heating member 124. Allow the process gas to heat up to the process temperature.

Hereinafter, a method of supplying a process gas to the semiconductor manufacturing apparatus 100 having the structure described above with reference to FIGS. 1 and 2 will be described in detail. When the process is started, the substrate W is introduced into the process chamber 110 through the substrate entrance 112 and then loaded on the support member 120. At this time, an unnecessary photosensitive liquid film remains on the processing surface of the substrate W. As shown in FIG. When the substrate W is loaded, the heating member 124 heats the substrate W to a process temperature. In this case, a heater (not shown) heats the process chamber 110 to a predetermined process temperature. In addition, the suction member 118a sucks the gas in the process chamber 110 and forcibly discharges it. By the suction of the suction member 118a, the pressure inside the process chamber 110 is reduced to the process pressure.

The high frequency applicator 150 applies high frequency power to the electrode plate 134. When high frequency power is applied to the electrode plate 134, a specific potential difference is generated between the electrode plate 134 and the support member 120. In addition, the gas supply member 140 supplies a process gas to the shower head 130.

The process of supplying the process gas to the shower head 130 by the gas supply member 140 is as follows. The valve 144a is opened, and the gas supply line 144 supplies the process gas from the gas supply source 142 to the shower head 130. At this time, the process gas moved along the gas supply line 144a is heated by heat generated by the heating member 124 when passing through the heating unit 146. Therefore, the process gas is heated to a predetermined temperature while moving along the heating unit 146. The heated process gas is again supplied to the shower head 130 along the gas supply line 144b.

The process gas supplied to the shower head 130 is injected into the process chamber 110 through the injection holes 134a formed in the electrode plate 134. At this time, the process gas injected through the electrode plate 134 to which the high frequency power is applied is excited to perform an ashing process of removing the photoresist film remaining on the processing surface of the substrate (W).

When the photosensitive liquid remaining on the substrate W is removed, the valve 144a is closed to stop the supply of the process gas. In addition, the gas supply member 140 supplies an inert gas into the process chamber 110 to increase the pressure inside the process chamber 110. In addition, the suction member 118a forcibly sucks the reaction by-products remaining in the process chamber 110 through the exhaust line 118 and discharges them to the outside. When the pressure inside the process chamber 110 rises to the normal pressure, the substrate W is unloaded from the support member 120 and then drawn out of the process chamber 110 through the substrate entrance 112.

In the above-described semiconductor manufacturing apparatus 100 and the method for supplying gas to the apparatus 100, the heating of the substrate W and the process gas are performed by one heating means (heating member 124). Therefore, the structure of the apparatus is simple and the manufacturing cost can be reduced as compared with a structure having a plurality of heating means such as a heating means for heating a substrate and a heating means for heating respective process gases. In addition, since the amount of power used reduces the number of heating means, the power consumption of the apparatus can be reduced.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

As described above, the semiconductor manufacturing apparatus and the method for supplying gas to the apparatus according to the present invention perform heating of the substrate and the process gas with one heating means. Therefore, the semiconductor manufacturing apparatus and the method for supplying gas to the apparatus according to the present invention can reduce the manufacturing cost of the apparatus.

In addition, the semiconductor manufacturing apparatus and the method of supplying gas to the apparatus according to the present invention have a simple structure.

In addition, the semiconductor manufacturing apparatus according to the present invention and the method for supplying gas to the apparatus is easy for the maintenance of the operator.

In addition, the semiconductor manufacturing apparatus and the method for supplying gas to the apparatus according to the present invention can reduce the power consumption.

Claims (7)

In the apparatus for manufacturing a semiconductor device, Process chamber, A support member for supporting a substrate in the process chamber and having a heating member for heating the substrate during the process; Including a gas supply member for supplying gas to the process chamber, The gas supply member, And a gas supply line having a heating unit arranged to heat the gas moving therein by the heating member. The method of claim 1, The heating unit, A semiconductor manufacturing apparatus, characterized in that provided in the support member in the lower portion of the heating member, and has a shape arranged zigzag on a horizontal line. The method of claim 1, The heating unit, It is provided in the support member, and has a shape that is wound with a gradually smaller radius from the edge region of the heating member toward the center area of the heating member with respect to the center of the heating member in the lower portion of the heating member A semiconductor manufacturing apparatus characterized by the above-mentioned. The method of claim 1, The heating unit, It is provided in the support member, and has a shape that is wound with a gradually larger radius from the central region of the heating member toward the edge region of the heating member with respect to the center of the heating member in the lower portion of the heating member A semiconductor manufacturing apparatus. The method of claim 1, The heating unit, And a coil shape provided inside the support member and surrounding the circumference of the heating member. The substrate is processed by supplying heated gas into a process chamber that performs a semiconductor manufacturing process, And the heating of the gas is performed by a heating member which heats the substrate accommodated in the process chamber during the process. The method of claim 6, The heating member, It is provided inside the support member for supporting the substrate, The gas is, The gas supply method characterized in that passing through the periphery of the heating member inside the support member.

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