KR20070115909A - Pattern forming method - Google Patents

Abstract

It is possible to provide a pattern forming method capable of reducing the resolution irregularities and concentration irregularities of a pattern formed on an exposed surface of a pattern forming material so as to effectively form the pattern with a high resolution. For this, a photosensitive layer of a pattern forming material formed on a support body is layered on a substrate to be treated. After this, an exposure head including light irradiation means and light modulation means having n plotting units arranged two-dimensionally and with the column direction of the plotting units at a set inclination angle R with respect to the scan direction is used for the photosensitive layer so as to execute: a step for specifying the use plotting units used for N-degree exposure by the plotting unit specification means for the exposure head; a step for controlling the plotting units by the plotting unit control means for the exposure head; and a step for relatively shifting the exposure head in the scan direction with respect to the photosensitive layer for performing exposure.

Description

Pattern Forming Method {PATTERN FORMING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method in which light modulated according to image data is imaged on a pattern forming material to expose the pattern forming material.

BACKGROUND ART An exposure apparatus is known in which light modulated by a spatial phototransformer or the like is passed through an imaging optical system, an image by this light is imaged on a predetermined pattern forming material, and the pattern forming material is exposed. The exposure apparatus includes a spatial light photovoltaic element formed by two-dimensional arrangement of a plurality of drawing parts for modulating the irradiated light according to a control signal, a light source for irradiating light to the spatial photovoltaic element, and the spatial light photovoltaic element. An exposure head having an imaging optical system for forming an image on a pattern forming material by modulated light, wherein the desired two-dimensional pattern is operated by operating the exposure head while moving relative to the exposure surface of the pattern forming material. It can form on the exposure surface of a formation material (refer nonpatent literature 1 and patent document 1).

In the exposure head of the exposure apparatus, a single exposure head is provided with a sufficient exposure area depending on the configuration of a light source array, such as when a digital micromirror device (DMD) having a generally available size is used as a spatial light variable element. It is difficult to cover. Therefore, the exposure apparatus is proposed by the form which uses several said exposure head in parallel, and inclines the said exposure head with respect to a scanning direction.

For example, Patent Document 2 discloses that a plurality of exposure heads having DMDs in which micromirrors are arranged in a rectangular lattice are inclined with respect to the scanning direction, so that the triangular portions of both sides of the inclined DMD are adjacent in the direction perpendicular to the scanning direction. The exposure apparatus to which each exposure head was attached is set so that mutually complementary between DMDs may be mentioned.

In addition, Patent Document 3 sets a plurality of exposure heads having a rectangular lattice DMD so as not to be inclined with respect to the scanning direction or to be inclined only by a small angle so that the exposure area by DMD adjacent in the direction perpendicular to the scanning direction overlaps only a predetermined width. Each of the exposure heads is attached to each other, and the number of micromirrors to be driven is reduced or increased at a constant rate corresponding to the overlapping portions between the exposure areas of each DMD, and the exposure area by each DMD is formed into a parallelogram shape. An exposure apparatus is described.

However, in the case of performing exposure inclined with respect to the scanning direction using a plurality of the exposure heads, fine adjustment of the relative position or relative installation angle between the exposure heads is generally difficult, and a problem deviates slightly from the ideal relative position and relative installation angle. There is.

On the other hand, in order to improve the resolution or the like, the exposure head is used so that the light scanning line from one drawing part coincides with the light scanning line from another drawing part, and each point on the exposure surface of the pattern forming material is substantially used a plurality of times. The exposure apparatus of the multiple exposure type which exposes is proposed.

For example, Patent Document 4 discloses a plurality of micromirrors (gravities) in two dimensions in order to improve the resolution of the two-dimensional pattern formed on the exposure surface and to enable the expression of a pattern including a smooth inclined line. An exposure apparatus is described in which an array of rectangular DMDs is inclined with respect to the scanning direction, and an exposure spot is partially overlapped on an exposure surface from an adjacent micromirror.

In addition, Patent Document 5 also uses a rectangular DMD inclined with respect to the scanning direction, whereby a color image representation by changing an illumination chromaticity by overlapping an exposure spot on an exposure surface, or a partial defect of a microlens may be caused. An exposure apparatus capable of suppressing an imaging error is described.

However, also in the case of performing the multiple exposure, in the location on the exposure surface of the pattern forming material exposed by the deviation of the installation angle of the exposure head from the ideal setting inclination angle, the density and arrangement of the exposure spots are different from those of other portions. There is a problem in that unevenness is seen in the resolution and density of the image forming on the pattern forming material, and the edge roughness of the formed pattern is increased.

Moreover, not only the difference in the installation position or installation angle of the said exposure head, but also the distortion of the pattern which arises by the various aberrations of the optical system between the said drawing part and the exposure surface of the said pattern forming material, the distortion of the said drawing part itself, etc. It causes the unevenness to occur in the resolution and density of the pattern formed on the exposed surface of the pattern forming material.

With respect to these problems, a method of improving the adjustment position of the exposure head, the adjustment angle of the installation angle, the adjustment accuracy of the optical system, etc. has been considered, but there is a problem in that the manufacturing cost is very large when the improvement of the precision is pursued. The same problem may occur not only in the above exposure apparatus but also in various drawing apparatuses such as an inkjet printer.

Therefore, the influence of the variation in the exposure amount due to the difference in the installation position or the installation angle of the exposure head, the pattern distortion caused by various aberrations of the optical system between the drawing portion and the exposure surface of the pattern forming material, distortion of the drawing portion itself, and the like By uniformly reducing the density variation and density irregularity of the pattern formed on the exposed surface of the pattern forming material, a pattern formation method capable of high definition and efficient formation of permanent patterns such as a protective film, an insulating film and a solder resist is still possible. This situation is not provided and is expected to be further developed.

Patent Document 1: Japanese Patent Publication No. 2004-1244

Patent Document 2: Japanese Patent Application Laid-Open No. 2004-9595

Patent Document 3: Japanese Patent Publication No. 2003-195512

Patent Document 4: US Patent No. 6493867

Patent Document 5: Japanese Patent Application No. 2001-500628

Non-Patent Document 1: Ishikawa Akihito "Development and Mass Production by Maskless Exposure", "Electronics Installation Technology", Kijutsujo Sakai Co., Ltd., Vo1.18, No.6, 2002, p.74-79

SUMMARY OF THE INVENTION The present invention has been made in view of this phenomenon, and aims to solve the above problems in the prior art and achieve the following objects. That is, the present invention is caused by the pattern distortion due to the difference in the installation position or the installation angle of the exposure head, the various aberrations of the optical system between the drawing part and the exposure surface of the pattern forming material, and the distortion of the drawing part itself. It is an object of the present invention to provide a pattern forming method capable of uniformly forming the pattern and efficiently forming the pattern by reducing the influence of variation in the exposure dose and reducing the resolution variation or density irregularity of the pattern formed on the exposed surface of the pattern forming material. do.

Means for solving the above problems are as follows. In other words,

[1] In the pattern forming material having the photosensitive layer on the support, after the photosensitive layer is laminated on the target substrate, the photosensitive layer

Light modulating means having light emitting means and n number of light emitting parts that receive light from the light irradiation means (where n is a natural number of two or more) and are arranged in two dimensions, and which can control the drawing parts in accordance with pattern information. As an exposure head having an exposure head, the exposure head is disposed so that the column direction of the drawing part has a predetermined set inclination angle θ with respect to the scanning direction of the exposure head.

A step of designating the drawing part to be used for exposure among N (where N is a natural number of two or more) among the drawing parts usable by use drawing part designation means for the exposure head;

Controlling the drawing section so that only the drawing section specified by the drawing section designation means is involved in exposure to the drawing section control means with respect to the exposure head;

Exposing the exposure head relative to the photosensitive layer by moving the exposure head in a scanning direction.

It is a pattern formation method characterized by including. In the pattern formation method as described in said [1], among the said drawing parts which can be used by the use drawing part designation means with respect to the said exposure head, the said drawing part used for exposure in N (however, N is a natural number of 2 or more) designates. The drawing section is controlled such that only the drawing section designated by the use drawing section designation means is involved in exposure. The exposure head is moved relative to the photosensitive layer in the scanning direction to perform exposure so that the resolution variation or density of the pattern formed on the exposed surface of the pattern forming material due to the difference in the installation position or the installation angle of the exposure head. The stain is even. As a result, the said pattern forming material exposure is performed with high definition. For example, a high definition pattern is formed by developing the said photosensitive layer after that.

[2] The method according to [1], wherein the use drawing part designation means in which the exposure is performed by the plurality of exposure heads is involved in the exposure of the connection area between the heads, which are overlapping exposure areas on the exposed surface formed by the plurality of the exposure heads. It is a pattern formation method which designates the said drawing part used in order to implement | achieve N-weight exposure in the connection area | region between the said heads among the drawing parts. The pattern forming method according to the above [2], wherein the use drawing part designation means in which the exposure is performed by the plurality of exposure heads is involved in the exposure of the connection area between the heads, which are overlapping exposure areas on the exposed surface formed by the plurality of the exposure heads. Among the drawing sections, the drawing sections used for realizing N-exposure in the connection region between the heads are designated so that the heads on the exposed surface of the pattern forming material due to the difference in the installation position or the installation angle of the exposure head are specified. The resolution deviation or density unevenness of the pattern formed in the connection region of E is uniform. As a result, exposure of the said pattern forming material is performed with high definition. For example, a high definition pattern is formed by developing the said photosensitive layer after that.

[3] The method according to [2], wherein the use drawing part designation means in which the exposure is performed by the plurality of exposure heads is involved in exposure other than the connection area between the heads which are overlapping exposure areas on the exposed surface formed by the plurality of the exposure heads. It is a pattern formation method which designates the said drawing part used in order to implement | achieve N-weight exposure in the area | regions other than the connection area between the said heads among the said drawing part. The pattern forming method according to the above [3], wherein the use drawing part designation means in which the exposure is performed by the plurality of exposure heads is used for exposure other than the connection area between the heads which are overlapping exposure areas on the exposed surface formed by the plurality of the exposure heads. The head on the to-be-exposed surface of the pattern forming material due to the difference in the installation position or the installation angle of the exposure head is designated by designating the drawing part used for realizing the N-level exposure other than the connection region between the heads among the drawing parts involved. In addition to the connection area therebetween, the resolution deviation or density irregularity of the pattern formed is even. As a result, exposure to said pattern forming material is performed with high definition. For example, a high definition pattern is formed by developing the said photosensitive layer after that.

[4] The method according to any one of [1] to [3], wherein the set inclination angle θ is the number of exposures N of N, the number of columns in the drawing part s, the column spacing p in the drawing part, and the exposure head in an inclined state. Pattern formation set to satisfy the relationship of θ≥θ _{i de al} with respect to θ _ideal satisfying the following equation, spsinθ _ideal ≥Nδ with respect to the column direction pitch δ of the drawing part along the direction orthogonal to the scanning direction of the exposure head Way.

[5] The pattern forming method according to any one of [1] to [4], wherein N of the N exposures is a natural number of 3 or more. In the pattern formation method as described in said [5], multiple drawing is performed when N of exposure of N is a natural number of 3 or more. As a result, by the complementary effect, the deviation of the resolution and the density | concentration unevenness of the said pattern formed on the to-be-exposed surface of the said pattern forming material by the difference of the installation position or installation angle of the said exposure head become more accurate.

[6] The method according to any one of [1] to [5], wherein the use graveyard part designation means

Light spot position detecting means for detecting a light spot position on the to-be-exposed surface as a drawing unit constituting an exposure area on the to-be-exposed surface generated by the tomb portion;

A drawing part selecting means for selecting a drawing part used for realizing N-exposure based on a detection result by said light spot position detecting means;

It is a pattern formation method provided with.

[7] The pattern forming method according to any one of [1] to [6], wherein the use drawing part designation means designates the use drawing part used in order to realize exposure in N units by row.

[8] The light point position detecting means according to [6] or [7], wherein the light point position detecting means scans the light direction on the exposed surface and the column head in the state in which the exposure head is inclined based on the detected two or more light point positions. The real tilt angle θ 'formed by the direction is specified, and the drawing part selecting means is a pattern forming method of selecting the used drawing part so as to absorb the error between the real tilt angle θ' and the set tilt angle θ.

[9] The method of [8], wherein the actual inclination angle θ 'is an average value, an intermediate value, and a maximum value of a plurality of real inclination angles formed by the thermal direction of the light spot on the exposed surface and the scanning direction of the exposure head while the exposure head is inclined. And a pattern forming method which is any one of minimum values.

[10] The method of any one of [8] to [9], wherein the drawing part selecting means has a relationship of ttanθ '= N (where N represents N of the number of exposures in N) based on the actual inclination angle θ'. It is a pattern formation method which derives the natural number T which is close | satisfied to t, and selects the said drawing part of the said row T from the 1st row from the drawing part arranged in m rows (m means two or more natural numbers). .

[11] In [8] or [9], the drawing part selecting means is provided to t that satisfies the relationship of ttan θ '= N (where N represents N of the number of exposures in N) based on the actual inclination angle θ'. A near natural number T is derived, and the cemetery part from (T + 1) to m rows is specified as an unused cemetery part in the matrices arranged in rows m (where m means a natural number of 2 or more), and the unused cemetery part It is a pattern formation method which selects the said drawing part except as a using drawing part.

[12] The region according to any one of [6] to [11], wherein the drawing unit selection means includes at least an overlapping exposure area on an exposed surface formed by a plurality of rendering unit rows,

(1) Means for selecting the use drawing part so that the total area of the area | region which becomes overexposure and the area | region which become overexposure becomes minimum with respect to ideal N medium exposure,

(2) a means for selecting the use drawing section so that the number of drawing units in the area overexposed and the number of drawing units in the area underexposure become equal with respect to the ideal N-level exposure,

(3) Means for selecting the use drawing part so that the area of the area which becomes overexposure becomes the minimum and the area which becomes underexposure occurs with respect to ideal N medium exposure, and

(4) Means for selecting the use drawing part so that the area of the area which becomes underexposure becomes minimum and the area which becomes overexposure does not arise with respect to ideal N medium exposure.

It is any one of the pattern formation methods.

[13] The method according to any one of [6] to [12], wherein the drawing part selecting means is a connection area between the heads which is an overlapping exposure area on an exposed surface formed by a plurality of exposure heads.

(1) For an ideal N-level exposure, an unused drawing part is specified in the drawing part involved in the exposure of the connection area between the heads so that the total area of the over-exposed area and the under-exposed area is minimum. Means for selecting the seedling portion except the unused seedling portion as a using seedling portion,

(2) With respect to the ideal N-exposure, it is not used in the drawing part involved in the exposure of the connection area between the heads such that the number of drawing units in the overexposed area and the number of drawing units in the underexposed area are equal. Means for specifying a drawing section and selecting the drawing section except the unused drawing section as a using drawing section,

(3) With respect to the ideal N-exposure, an unused drawing part in the drawing part involved in the exposure of the connection area between the heads is made so that the area of the area that becomes overexposure is minimized and the area that becomes underexposure is not generated. Means for selecting the seedling portion except the unused seedling portion as a using seedling portion, and

(4) With respect to the ideal N-exposure, an unused drawing part in the drawing part involved in the exposure of the connection area between the heads is made so that the area of the area that becomes underexposure becomes minimum and the area that becomes excessive exposure occurs. Means for specifying the drawing part except the unused drawing part as the using drawing part

It is any one of the pattern formation methods.

[14] The unused seedling portion is a method for producing a structure in a cell according to the above [13], which is specified in units of rows.

[15] The column of (N-1), according to any one of [5] to [14], among N of the mausoleums among the mausoleums that can be used to designate the mausoleum in the mausoleum designation means. It is a pattern formation method which performs reference exposure using only the said drawing part which comprises every drawing part row. In the pattern formation method as described in said [15], among the said drawing parts which can be used for designating a drawing part in use drawing part designation means, the drawing part row for every (N-1) columns is comprised with respect to N of N exposure. A simple pattern of about single drawing with reference exposure using only the drawing portion can be obtained. As a result, the drawing part is easily designated in the connection area between the heads.

[16] The method according to any one of [5] to [14], wherein among the above-mentioned drawing parts that can be used to designate a using drawing part in the using drawing part designating means, for every 1 / N rows with respect to N of the N exposures. It is a pattern formation method which performs reference exposure using only the said drawing part which comprises a drawing row. The pattern formation method as described in said [16] is the said drawing part which comprises the drawing part column every 1 / N rows with respect to N of exposure of N among the said drawing parts which can be used for designating a drawing part in use drawing part designation means. By using only the portions, reference exposure can be performed to obtain a simple pattern of about single drawing. As a result, the drawing part is easily designated in the connection area between the heads.

[17] The pattern according to any one of [1] to [16], wherein the use drawing part designating means has a slit and a photodetector as a light spot position detecting means, and a computing device connected to the photodetector as a drawing part selecting means. Formation method.

[18] The method of forming a pattern according to any one of [1] to [17], wherein the exposure N among N is a natural number of 3 or more and 7 or less.

[19] The light modulating according to any one of [1] to [18], wherein the light modulating means further comprises pattern signal generating means for generating a control signal based on the pattern information to be formed. It is a pattern formation method which modulates according to the control signal produced | generated by the pattern signal generation means.

[20] The method according to any one of [1] to [19], wherein the pattern information is converted so that the dimension of the predetermined portion of the pixel pattern indicated by the pattern information matches the dimension of the corresponding portion realized by the designated use drawing part. It is a manufacturing method of the in-cell structure which has a conversion means.

[21] The pattern forming method according to any one of [1] to [20], wherein the light modulating means is a spatial light modulating element.

[22] The method for forming a pattern of [21], wherein the spatial light modulator is a digital micro mirror device (DMD).

[23] The pattern forming method according to any one of [1] to [22], wherein the drawing portion is a micro mirror.

[24] The method of forming a pattern according to any one of [1] to [23], wherein the light irradiation means is capable of synthesizing and irradiating two or more lights. In the pattern forming material described in [24] above, the light irradiation means is capable of irradiating by combining two or more lights, so that the exposure is performed as exposure light having a deep depth of focus. As a result, exposure to said pattern forming material is performed with extremely high definition. For example, an extremely fine pattern is formed by developing the said photosensitive layer after that.

[25] The optical system according to any one of [1] to [24], wherein the light irradiation means collects a plurality of lasers, multimode optical fibers, and laser beams irradiated from the plurality of lasers, and combines them with the multimode optical fibers. It is a pattern formation method which has. The pattern forming method according to the above [25], wherein the exposure depth is achieved by allowing the laser beams irradiated from the plurality of lasers by the light irradiation means to be focused by the collective optical system and to be coupled to the multimode optical fiber. Is performed with deep exposure light. As a result, exposure to said pattern forming material is performed very highly. For example, an extremely fine pattern is formed by developing the said photosensitive layer after that.

[26] The pattern according to any one of [1] to [25], wherein the exposure is performed by passing a microlens array in which a microlens having an aspherical surface capable of correcting aberration due to distortion of the emission surface in the drawing part is arranged. Formation method. By passing through the aspherical surface in the microlens array, the pattern forming method described in [26] is corrected for aberration due to distortion of the exit surface in the drawing part, and distortion of an image formed on the pattern forming material is suppressed. . As a result, exposure to said pattern forming material is performed with high definition. For example, a high-definition pattern is formed by developing the said photosensitive layer after that.

[27] The method of forming a pattern according to [26], wherein the aspherical surface is a toric surface. In the pattern formation method as described in said [27], when the said aspherical surface is a toric surface, the aberration by the distortion of a radiation surface is efficiently corrected in the said drawing part, and the distortion of the image formed on the pattern formation material is suppressed efficiently. As a result, exposure to said pattern forming material is performed with high definition. For example, a high definition pattern is formed by developing the said photosensitive layer after that.

[28] The method for forming a pattern according to [26] or [27], wherein the exposure is performed by passing an aperture array formed by openings arranged so that only light passing through the microlenses is incident near a condensing position of the microlenses. . In the pattern formation method as described in [28], an extinction ratio improves because exposure is performed through the said opening array. As a result, exposure is extremely high definition. For example, an extremely fine pattern is formed by developing the said photosensitive layer after that.

[29] The method of forming a pattern according to any one of [1] to [28], wherein the photosensitive layer contains a binder, a polymerizable compound, and a photopolymerization initiator.

[30] The method of [29], wherein the binder is a pattern forming method having an acidic group.

[31] The method for forming a pattern according to [29] or [30], wherein the binder is a vinyl copolymer.

[32] The pattern forming material according to any one of [29] to [31], wherein the binder contains a copolymer, and the copolymer has a structural unit derived from at least one of styrene and styrene derivative.

[33] The glass transition temperature (Tg) of any one of [29] to [32], wherein the binder is a pattern forming material that is 80 ° C or higher.

[34] The method for forming a pattern according to any one of [29] to [33], wherein the acid value of the binder is 70 to 250 mgKOH / g.

[35] The pattern forming method according to any one of [29] to [34], wherein the polymerizable compound contains a monomer having at least one of a urethane group and an aryl group.

[36] The photopolymerization initiator according to any one of [29] to [35], wherein the photopolymerization initiator is a halogenated hydrocarbon derivative, hexaarylbiimidazole, oxime derivative, organic peroxide, thio compound, ketone compound, aromatic onium salt and metalocenes. Pattern forming method comprising at least one selected from.

[37] The pattern forming method according to any one of [1] to [36], wherein the photosensitive layer contains 10 to 90 mass% of the binder and contains 5 to 90 mass% of the polymerizable compound.

The thickness of the said photosensitive layer is a pattern formation method in any one of [1]-[37].

[39] The method according to any one of [1] to [38], wherein the support contains a synthetic resin and is a transparent pattern forming method.

[40] The method according to any one of [1] to [39], wherein the support is a long pattern forming method.

[41] The pattern forming material according to any one of [1] to [40], wherein the pattern forming material is long and wound in a roll.

[42] The pattern forming method according to any one of [1] to [41], wherein the protective film is formed on the photosensitive layer in the pattern forming material.

According to the present invention, an exposure amount due to a pattern distortion caused by a difference in an installation position or an installation angle of the exposure head, various aberrations of the optical system between the drawing portion and the exposure surface of the pattern forming material, distortion of the drawing portion itself, and the like It is possible to provide a pattern formation method capable of high definition and efficient formation of the pattern by equalizing the influence of the deviation and reducing the resolution variation or the density unevenness of the pattern formed on the exposed surface of the pattern forming material.

1 is a perspective view showing an appearance of an example of a pattern forming apparatus.

2 is a perspective view showing an example of the configuration of a scanner of the pattern forming apparatus.

3A is a plan view showing an exposed area formed on the exposed surface of the pattern forming material.

3B is a plan view showing the arrangement of the exposure areas by the respective exposure heads.

4 is a perspective view illustrating an example of a schematic configuration of an exposure head.

5A is a top view illustrating an example of a detailed configuration of an exposure head.

5B is a side view showing an example of a detailed configuration of an exposure head.

FIG. 6 is a partially enlarged view illustrating an example of the pattern forming apparatus DMD of FIG. 1.

7A is an example of the perspective diagram which shows the state in which a micromirror is on.

7B is an example of the perspective diagram which shows the state in which a micromirror is off (off).

8 is a perspective view illustrating one example of a fiber array light source configuration.

9 is a front view illustrating an example of light emitting point arrays in the laser emission unit of the fiber array light source.

10 is an explanatory diagram showing an example of unevenness occurring in a pattern on the exposure surface when there is an installation angle error and pattern distortion of the exposure head.

FIG. 11 is a top view showing the positional relationship between the exposure area by one DMD and the corresponding slit. FIG.

It is a top view for demonstrating the method of measuring the position of the light spot on a to-be-exposed surface using a slit.

FIG. 13 is an explanatory view showing a state in which unevenness occurring in a pattern on an exposure surface is improved as a result of using only the selected micromirrors for exposure.

14 is an explanatory diagram showing an example of unevenness occurring in a pattern on an exposure surface when there is a difference in relative position between adjacent exposure heads.

Fig. 15 is a top view showing the positional relationship between the exposure area and the corresponding slit by two adjacent exposure heads.

It is an upper side figure for demonstrating the method of measuring the position of the light spot on an exposure surface using a slit.

FIG. 17 is an explanatory diagram showing a state in which only the use pixel selected in the example of FIG. 14 is moved and the unevenness generated in the pattern on the exposure surface is improved.

18 is an explanatory diagram showing an example of unevenness occurring in a pattern on an exposure surface when there is a difference in relative position and an installation angle error between adjacent exposure heads.

FIG. 19 is an explanatory diagram showing exposure using only the use drawing part selected in the example of FIG. 18. FIG.

20A is an explanatory diagram showing an example of magnification distortion.

20B is an explanatory diagram showing an example of diameter distortion of the beam.

21A is an explanatory diagram showing a first example of the reference exposure using the single exposure head.

21B is an explanatory diagram showing a first example of the reference exposure using the single exposure head.

22 is an explanatory diagram showing a first example of the reference exposure using the plurality of exposure heads.

FIG. 23A is an explanatory diagram showing a second example of the reference exposure using the single exposure head. FIG.

23B is an explanatory diagram showing a second example of the reference exposure using the single exposure head.

24 is an explanatory diagram illustrating a second example of the reference exposure using the plurality of exposure heads.

25 is an example of the figure which shows the structure of a multimode optical fiber.

26 is an example of the top view which shows a structure of a combined laser light source.

27 is an example of the top view which shows a structure of a laser module.

28 is an example of the side view which shows a structure of the laser module shown in FIG.

FIG. 29 is a partial side view showing the configuration of the laser module shown in FIG. 27.

30 is an example of the perspective diagram which shows a structure of a laser array.

31A is an example of the perspective diagram which shows a structure of a multi cavity laser.

FIG. 31B is an example of the perspective view of the multi cavity laser which arrange | positioned the multi cavity laser shown in FIG. 31A on an array.

32 is an example of the top view which shows another structure of a combination laser light source.

33 is an example of the top view which shows another structure of a combined laser light source.

34A is an example of the top view which shows another structure of a combined laser light source.

34B is an example of sectional drawing along the optical axis of FIG. 34A.

35A is an example of sectional drawing along the optical axis which shows another exposure head structure from which a coupling optical system differs.

35B is an example of the top view which shows the optical image projected on a to-be-exposed surface, when a micro lens array etc. are not used.

35C is an example of the top view which shows the optical image projected on a to-be-exposed surface, when a micro lens array etc. are used.

36 is an example of the figure which shows the distortion of the micromirror reflection surface which comprises a DMD with a contour line.

37A is an example of the graph which shows the height position change of the micromirror reflection surface with respect to the x direction of the said mirror.

37B is an example of the graph which shows the height position change of the micromirror reflection surface with respect to the y direction of the said mirror.

38A is an example of the front view of a micro lens array used for the pattern forming apparatus.

38B is an example of the side view of a micro lens array used for the pattern forming apparatus.

39A is an example of the front view of the micro lens which comprises a micro lens array.

39B is an example of the side view of the micro lens which comprises a micro lens array.

40A is an example of the schematic which shows the condensing state by a micro lens about one cross section.

40B is an example of the schematic which shows the condensing state by a micro lens about the inside of another cross section.

41 is an example of the figure which shows the result of simulating a beam diameter in the condensing position vicinity of a micro lens.

42 is an example of the figure which shows the same simulation result as FIG. 41 about another position.

43 is an example of the figure which shows the same simulation result as FIG. 41 about another position.

44 is an example of the figure which shows the same simulation result as FIG. 41 about another position.

45 is an example of the figure which showed the result of simulating a beam diameter in the condensing position vicinity of a micro lens in the conventional pattern formation method.

46 is an example of the figure which shows the same simulation result as FIG. 45 about another position.

47 is an example of the figure which shows the same simulation result as FIG. 45 about another position.

48 is an example of the figure which shows the same simulation result as FIG. 45 about another position.

49A is an example of the front view of the micro lens which comprises a micro lens array.

49B is an example of the side view of the micro lens which comprises a micro lens array.

50A is an example of the schematic which shows the condensing state by the micro lens of FIG. 49A and 49B about the inside of one cross section.

50B is an example of the schematic which shows the condensing state by the micro lens of FIG. 49A and 49B about another cross section.

51A is an example of explanatory drawing about the concept of the correction by a light-quantity distribution correction optical system.

51B is an example of explanatory drawing about the concept of the correction by a light-quantity distribution correction optical system.

51C is an example of explanatory drawing about the concept of the correction by a light-quantity distribution correction optical system.

Fig. 52 is an example of a graph showing the light amount distribution when the light irradiation means is a Gaussian distribution and does not correct the light amount distribution.

53 is an example of the graph which shows the light quantity distribution after correction by the light quantity distribution correction optical system.

FIG. 54 is an explanatory diagram showing an example of unevenness formed in a pattern on an exposure surface by "angle distortion" in which the inclination angle of each pixel column is uniformly lost in Comparative Example 1. FIG.

(Pattern formation method)

In the pattern forming method of the present invention, in a pattern forming material having a photosensitive layer on a support, the photosensitive layer is laminated on a substrate to be treated, and then

A light irradiating means and n (n is a natural number of two or more) cemetery parts arranged in two dimensions in order to receive light from the light irradiating means, and having light modulating means capable of controlling the cemetery part in accordance with pattern information. As one exposure head, the exposure head arrange | positioned so that the column direction of the said drawing part may make predetermined predetermined inclination-angle (theta) with respect to the scanning direction of the said exposure head is used,

A process of designating the drawing portion to be used for exposure among N (where N is a natural number of two or more) among the drawing portions usable by use drawing portion specifying means for the exposure head,

Controlling the drawing part so that only the drawing part designated by the using drawing part designation means is involved in the exposure with the drawing part control means with respect to the exposure head;

Performing exposure by moving the exposure head relative to the scanning direction with respect to the photosensitive layer

And other appropriately selected processes.

The N exposure means exposure in almost all regions of the exposed surface on the photosensitive layer where a straight line parallel to the scanning direction of the exposure head intersects the N ray rows irradiated on the exposed surface.

There is no restriction | limiting in particular if N of said N exposure is two or more natural numbers, Although it can select suitably according to the objective, three or more natural numbers are preferable, and three or more natural numbers are more preferable.

<Pattern forming apparatus>

An example of the pattern forming apparatus which concerns on the pattern formation method of this invention is demonstrated, referring drawings.

The pattern forming apparatus is called an exposure apparatus of a so-called flat bed type, and as shown in FIG. 1, a substrate to be processed in which the photosensitive layer 12 of a sheet-shaped pattern forming material is laminated (hereinafter, simply referred to as “pattern forming material 12 "," Is provided with a flat plate-shaped moving stage 14 for holding on the surface. On the upper surface of the thick plate-shaped mounting table 18 supported by the four corner portions 16, two guides 20 extending along the stage moving direction are provided. The stage 14 is arranged to be reciprocally moved by the guide 20 while being disposed so that its long direction is directed toward the stage moving direction. On the other hand, the pattern forming apparatus 10 is provided with a stage driving device (not shown) for driving the stage 14 along the guide 20.

In the center portion of the mounting table 18, a co-shaped gate 22 is provided so as to pass through the movement path of the stage 14. Each of the ends of the co-shaped gate 22 is fixed to both sides of the mounting table 18. A scanner 24 is provided on one side with the gate 22 inserted therein, and a plurality of sensors 26 (for example, two) for detecting the front and rear ends of the photosensitive material 12 are provided on the other side. The scanner 24 and the sensor 26 are provided in the gate 22, respectively, and are fixedly arrange | positioned above the movement path of the stage 14. As shown in FIG. On the other hand, the scanner 24 and the sensor 26 are connected to the controller which is not shown in figure which controls them.

Here, for the sake of explanation, an X-axis and a Y-axis that are orthogonal to each other are defined in a plane parallel to the surface of the stage 14 as shown in FIG. 1.

Ten slit 28 formed in the square shape which opened toward the X-axis direction are formed in the edge part of an upstream (henceforth "upstream side") along the scanning direction of the stage 14 at equal intervals. . Each slit 28 is a slit 28a located on the upstream side and a slit 28b located on the downstream side. The slits 28a and the slits 28b are orthogonal to each other, and the slits 28a have an angle of −45 degrees and the slits 28b have an angle of +45 degrees with respect to the X axis.

The position of the slit 28 can be almost coincident with the center of the exposure head 30. Further, the size of each slit 28 is a size that sufficiently covers the width of the exposure area 32 by the corresponding exposure head 30. In addition, as the position of the slit 28, you may make it substantially correspond to the center position of the overlapping part between adjacent exposure completed area | regions 34. As shown in FIG. In this case, the size of each slit 28 is a size which sufficiently covers the width of the overlapping portion between the exposed areas 34.

In the position below each slit 28 in the stage 14, the single-cell type photodetector (not shown) is comprised as a light spot position detection means which detects a light spot as a drawing unit in the use drawing part designation process mentioned later, respectively. . In addition, each photodetector is connected to an arithmetic unit (not shown) as a drawing part selection means which selects the drawing part in the use drawing part designation process mentioned later.

As the operation mode of the pattern forming apparatus at the time of exposure, the exposure may be continuously performed while the exposure head is always moved, or the exposure operation may be performed by stopping the exposure head at a position before each movement while moving the exposure head in stages. good.

<< exposure head >>

Each exposure head 30 is provided in the scanner 24 so that the drawing direction (micromirror) column direction of the internal digital micromirror device (DMD) 36, which will be described later, forms a scanning direction and a predetermined set tilt angle θ. It is. For this reason, the exposure area | region 32 by each exposure head 30 turns into a rectangular area inclined with respect to a scanning direction. In the pattern forming material 12 along with the movement of the stage 14, a strip-shaped exposed area 34 is formed for each exposure head 30. In the example shown in Figs. 2 and 3B, the scanner 24 has ten exposure heads arranged on a substantially matrix of two rows and five columns.

On the other hand, below, when each exposure head arranged in m rows and n columns is represented, it is represented by the exposure head _30mn , and exposure is shown when the exposure area by each exposure head arranged in m rows and n columns is shown. This is indicated by the area 32 _mn .

In addition, as shown in FIGS. 3A and 3B, each of the exposure heads 30 in each row arranged in a line such that each of the strip-shaped exposed areas 34 partially overlaps with the adjacent exposed area 34. Are arranged at predetermined intervals (natural arrangement of the long sides of the exposure area, twice in this embodiment) in the arrangement direction. For this reason, can not be exposed between exposure area portion of the first line (32 ₁₁₎ and the exposed area (32 ₁₂₎ can be exposed by exposure area (32 ₂₁₎ of the second row.

Each of the exposure heads 30 is a DMD as light modulating means (spatial light modulating element for modulating for each drawing part) which modulates the incident light for each drawing part according to the image data as shown in Figs. 4, 5A and 5B. (36) (product made in Texas Instruments, Inc.) is provided. This DMD 36 is connected to the controller which is a drawing part control means provided with a data processing part and a mirror drive control part. The data processing unit of this controller generates a control signal for driving control of each micromirror in the use area on the DMD 36 for each of the exposure heads 30 based on the input image data. The mirror drive control section also controls the angle of each micromirror reflection surface of the DMD 36 for each of the exposure heads 30 on the basis of the control signal generated by the image data processing section.

As shown in FIG. 4, the optical array of the optical incidence side of the DMD 36 includes a laser array having laser emission units arranged in a row along the direction in which the exit end (light emission point) of the optical fiber coincides with the long side direction of the exposure area 32. A lens system 40 for correcting the laser light emitted from the light source 38, the fiber array light source 38 and condensing on the DMD, and a mirror for reflecting the laser light transmitted through the lens system 40 toward the DMD 36 ( 42 are arranged in this order. Meanwhile, FIG. 4 schematically shows the lens system 40.

The lens system 40 has a uniform light amount distribution of one pair of lenses 44 for parallelizing the laser light emitted from the fiber array light source 38 and the parallelized laser light as shown in detail in FIGS. 5A and 5B. It consists of one knitting lens 46 corrected so as to lose light and a condensing lens 48 for condensing the laser light whose light quantity distribution is corrected on the DMD 36.

In addition, on the light reflection side of the DMD 36, a lens system 50 for imaging the laser light reflected by the DMD 36 on the exposure surface of the pattern forming material 12 is disposed. The lens system 50 is arranged so that the exposure surface of the DMD 36 and the pattern forming material 12 are in a conjugated relationship, and consists of two lenses 52 and a lens 54.

In this embodiment, the laser light emitted from the fiber array light source 38 is substantially enlarged by five times and then set so that the light beams in each micromirror on the DMD 36 are narrowed to about 5 mu m by the lens system 50 described above. have.

-Light modulation means;

There is no restriction | limiting in particular as long as it can modulate light as said optical modulation means, According to the objective, it can select suitably, For example, it is preferable to have n drawing parts.

There is no restriction | limiting in particular as an optical modulation means which has said n drawing parts, Although it can select suitably according to the objective, For example, a spatial light modulation element is preferable.

Examples of the spatial light modulator include a digital micro mirror device (DMD), a micro electro mechanical systems (MEMS) method, a space light modulator (SLM), and an optical device that modulates transmitted light by an electro-optic effect. (PLZT elements), liquid crystal light shutters (FLC), and the like, and DMD can be preferably exemplified among them.

The light modulating means preferably has a pattern signal generating means for generating a control signal based on the formed pattern information. In this case, the light modulating means modulates light in accordance with the control signal generated by the pattern signal generating means.

There is no restriction | limiting in particular as said control signal, According to the objective, it can select suitably, For example, a digital signal can be illustrated preferably.

Hereinafter, an example of the said optical modulation means is demonstrated, referring drawings.

As shown in FIG. 6, the DMD 36 is a drawing unit that constitutes a drawing (pixel) on an SRAM cell (memory cell) 56, and is a mirror device formed by arranging a plurality of micro mirrors 58 in a lattice form. to be. In the present embodiment, a DMD 36 in which 1024 columns x 768 rows of micromirrors 58 are arranged is used. Among them, a micromirror capable of being driven by a controller connected to the DMD 36 is used. 58) has only 1024 columns x 256 rows. Since the data processing speed of the DMD 36 is limited and the modulation rate per line is determined in proportion to the number of micromirrors used, the modulation speed per line is increased by using only a part of the micromirrors in this way. Each micromirror 58 is supported by a support | pillar, and the material with high reflectance, such as aluminum, is deposited on the surface. On the other hand, in this embodiment, the reflectance of each micromirror 58 is 90% or more, and the arrangement pitch is 13.7 micrometers in both a longitudinal direction and a lateral direction. The SRAM cell 56 is a CM0S of a silicon gate manufactured by a normal semiconductor memory manufacturing line via a support including a hinge and a yoke, and the whole is monolithic (integrated).

When the image signal indicating the density of each point constituting the desired two-dimensional pattern in two values is written into the SRAM cell (memory cell) 56 of the DMD 36, each micromirror 58 supported by the post is diagonally formed. It is inclined by any one of ± α degrees (for example, ± 10 degrees) with respect to the substrate side on which the DMD 36 is disposed. FIG. 7A shows a state inclined at + α degree with the micromirror 58 on, and FIG. 7B shows a state inclined at −α degree with the micromirror 58 off. As described above, by controlling the tilt of the micromirror 58 in each pixel of the DMD 36 in accordance with the image signal as shown in FIG. Is reflected in the inclined direction.

6 shows an example of a state where a part of the DMD 36 is enlarged and each micromirror 58 is controlled at + alpha degrees or alpha degrees. On-off control of each micro mirror 58 is performed by the above controller connected to the DMD 36. In addition, a light absorber (not shown) is disposed in the direction in which the laser light B reflected by the micromirrors 58 in the off state travels.

-Light irradiation means-

There is no restriction | limiting in particular in the said light irradiation means, According to the objective, it can select suitably, For example, (super) high pressure mercury lamp, xenon lamp, carbon arc lamp, halogen lamp, fluorescent lamps, such as a copier, LED, a semiconductor laser, etc. A well-known light source or the means which can irradiate by combining 2 or more lights can be enumerated, Among these, the means which can irradiate by combining 2 or more lights are preferable.

The light irradiated by the light irradiation means is, for example, an electromagnetic wave that passes through the support and activates a photopolymerization initiator or a sensitizer used when the light is irradiated through the support, and from ultraviolet to visible light, electron beam, X A line, a laser beam, etc. can be enumerated, Among these, a laser beam is preferable and the laser which synthesize | combined two or more lights (henceforth a "multiplex laser") is more preferable. Moreover, the same light can be used also when irradiating light after peeling a support body.

As for the wavelength of the said ultraviolet-ray from a visible ray, 300-1500 nm is preferable, 320-800 nm is more preferable, 330 nm-650 nm are especially preferable.

For example, the wavelength of the laser beam is preferably 200 to 1500 nm, more preferably 300 to 800 nm, still more preferably 330 nm to 500 nm, and particularly preferably 400 nm to 450 nm.

As means for irradiating the haptic laser, for example, a means having a collective optical system for condensing a plurality of lasers, multimode optical fibers, and laser beams irradiated from the plurality of lasers and coupling them to the multimode optical fibers is preferable.

Hereinafter, the means (fiber array light source) which can irradiate the said combining laser is demonstrated, referring drawings.

As shown in FIG. 8, the fiber array light source 38 includes a plurality of (eg, 14) laser modules 60 so that each laser module 60 has one end of the multimode optical fiber 62. Is combined. At the other end of the multimode optical fiber 62, an optical fiber 64 having a cladding smaller in diameter than the multimode optical fiber 62 is coupled. As shown in detail in FIG. 9, seven ends of the optical fiber 64 opposite to the multimode optical fiber 62 are opened along a direction orthogonal to the scanning direction, so that the laser output unit 66 arranged in two rows is constituted. It is.

As shown in FIG. 9, the laser output unit 66 formed at the end of the optical fiber 64 is fitted into two support plates 68 having a flat surface and fixed thereto. In addition, it is preferable that a transparent protective plate such as glass be disposed on the light exit end face of the optical fiber 64. The light exit end face of the optical fiber 64 has a high optical density, so dust collection is easy and deterioration is easy. By arranging the same protective plate, dust can be prevented from adhering to the end face and the deterioration can be delayed.

For example, as shown in FIG. 25, the optical fiber 64 having the small clad diameter of 1 to 30 cm in length is coaxially coupled to the distal end portion of the laser light output side of the multi-mode optical fiber 62 having the large clad diameter. Can be obtained. The two optical fibers are fusion-bonded such that the incidence cross section of the optical fiber 64 coincides with the emission cross section of the multimode optical fiber 62 so that the central axes of both optical fibers coincide. As described above, the diameter of the core 64a of the optical fiber 64 is equal to the diameter of the core 62a of the multimode optical fiber 62.

In addition, short-length optical fibers obtained by fusing an optical fiber having a short length and a large clad diameter to an optical fiber having a small clad diameter may be coupled to an exit end of the multimode optical fiber 62 via a ferrule, an optical connector, or the like. Detachable coupling using a connector or the like facilitates replacement of the tip portion in the case where an optical fiber having a small clad diameter is broken and the like, thereby reducing the cost required for maintaining the exposure head. In addition, the optical fiber 64 may be called the exit end of the multimode optical fiber 62 below.

The multimode optical fiber 62 and the optical fiber 64 may be any of a step index optical fiber, a graded index optical fiber, and a composite optical fiber. For example, a step index optical fiber manufactured by Mitsubishi Densen Kogyo Co., Ltd. can be used. In this embodiment, the multimode optical fiber 62 and the optical fiber 64 are step index optical fibers, and the multimode optical fiber 62 has a cladding diameter of 125 µm, a core diameter of 50 µm, NA of 0.2, and an incident end surface coating. = 99.5% or more, and the optical fiber 64 has a cladding diameter of 60 µm, a core diameter of 50 µm, and NA of 0.2.

In general, for laser light in the infrared region, reducing the cladding diameter of the optical fiber increases the total loss. For this reason, the suitable cladding diameter is determined according to the wavelength band of a laser beam. However, the shorter the wavelength, the smaller the total loss, and the laser light with a wavelength of 405 nm emitted from a GaN semiconductor laser produces a total thickness of clad {(clad diameter-core diameter) / 2} for infrared light in the wavelength range of 800 nm. Even if it is about 1/2 of the case where it is made and about 1/4 of the case which propagates the infrared light of 1.5-micrometer wavelength band for communication, the propagation loss hardly increases. Therefore, the cladding diameter can be made small to 60 micrometers.

However, the cladding diameter of the optical fiber is not limited to 60 µm. Although the cladding diameter of the optical fiber used in the conventional fiber array light source is 125 µm, the depth of focus becomes deeper as the clad diameter decreases, so the clad diameter of the optical fiber is preferably 80 µm or less, more preferably 60 µm or less, and 40 µm or less. Even more preferred. On the other hand, since the core diameter needs to be at least 3-4 micrometers, the cladding diameter of the optical fiber 64 is 10 micrometers or more.

The laser module 60 is comprised by the combined laser light source (fiber array light source) shown in FIG. The haptic laser light source is a plurality of (eg, seven) lateral multimode or single mode GaN semiconductor lasers LD1, LD2, LD3, LD4, LD5, LD6, which are arranged and fixed on the heat block 110, and It consists of collimator lenses L1, L2, L3, L4, L5, L6 and L7, one condenser lens 200 and one multimode optical fiber 62 provided corresponding to each of the LD7 and GaN semiconductor lasers LD1 to LD7. have. On the other hand, the number of semiconductor lasers is not limited to seven. For example, 20 semiconductor laser lights can be incident on a multimode optical fiber having a cladding diameter of 60 µm, a core diameter of 50 µm and a NA of 0.2, thereby realizing the required amount of light of the exposure head and further reducing the number of optical fibers. Can be further reduced.

The GaN semiconductor lasers LD1 to LD7 have a common oscillation wavelength (for example, 405 nm), and a maximum output power is also common (for example, 100 mW for a multi-mode laser and 30 mW for a single mode). In addition, you may use the laser which has an oscillation wavelength other than said 405 nm in the wavelength range of 350 nm-450 nm as GaN type semiconductor laser LD1-LD7.

27 and 28, the combined laser light source is accommodated in a box-shaped package 400 having an upper opening along with other optical elements. The package 400 includes a package lid 410 prepared to close the opening, introduces the encapsulating gas after the degassing treatment, and closes the opening of the package 400 with the package lid 410. The combined laser light source is hermetically sealed in a closed space (encapsulation space) formed by the package lid 410.

The base plate 420 is fixed to the bottom surface of the package 400, and the heat block 110, the condenser lens holder 450 holding the condenser lens 200, and the multi mode are formed on the upper surface of the base plate 420. The fiber holder 460 which holds the incidence end of the optical fiber 62 is provided. The exit end of the multimode optical fiber 62 is taken out of the package in an opening formed in the wall surface of the package 400.

In addition, the collimator lens holder 440 is provided on the side of the heat block 110 to hold the collimator lenses L1 to L7. An opening is formed in the horizontal wall surface of the package 400, and the wiring 470 for supplying a driving current to the GaN semiconductor lasers LD1 to LD7 through the opening is taken out of the package.

28, only the GaN-based semiconductor laser LD7 is numbered among the plurality of GaN-based semiconductor lasers, and only the collimator lens L7 is numbered among the plurality of collimator lenses.

Fig. 29 shows the front shape of the mounting portions of the collimator lenses L1 to L7. Each of the collimator lenses L1-L7 is formed in the shape which cut | disconnected the area | region containing the optical axis of the circular lens which has an aspherical surface in thin parallel elongation. The elongated collimator lens can be formed by, for example, molding a resin or optical glass. The collimator lenses L1 to L7 are arranged closely to the light emitting point arrangement direction so that the longitudinal direction is orthogonal to the light emitting point arrangement direction (left and right direction in FIG. 29) of the GaN semiconductor lasers LD1 to LD7.

On the other hand, GaN-based semiconductor lasers LD1 to LD7 are each provided with an active layer having a light emission width of 2 µm, and the laser beams B1 are respectively extended in a direction parallel to the active layer and in a right angle direction, for example, 10 ° and 30 °. I'm using a laser that fires ~ B7. These GaN semiconductor lasers LD1 to LD7 are arranged so that the light emitting points are arranged in one row in a direction parallel to the active layer.

Therefore, as described above, the laser beams B1 to B7 generated at each light emitting point have a larger direction corresponding to the longitudinal direction with respect to the collimator lenses L1 to L7 having an elongated shape, and the direction where the wider angle is smaller corresponds to the width direction ( Incident in a state coinciding with the longitudinal direction). That is, the collimator lenses L1 to L7 have a width of 1.1 mm and a length of 4.6 mm, and the diameters of the horizontal and vertical beams of the laser beams B1 to B7 incident thereon are 0.9 mm and 2.6 mm, respectively. Further, the respective collimator lens L1 ~ L7 has the focal length _{f 1 = 3mm, NA = 0.6} , a lens arrangement pitch = 1.25mm.

The condenser lens 200 cuts an area including the optical axis of a circular lens having an aspherical surface in a parallel plane in a thin and long manner, and is long in the array direction of collimator lenses L1 to L7, that is, in a horizontal direction and short in a direction perpendicular thereto. Is formed. The condenser lens 200 has a focal length f _{2 of} 23 mm and NA of 0.2. This condensing lens 200 is also formed by, for example, molding a resin or optical glass.

In addition, since a high brightness fiber array light source in which the optical fiber exit ends of the haptic laser light source are arranged in an array is used as the light irradiation means for illuminating the DMD, a pattern forming apparatus having a high output and a deep depth of focus can be realized. In addition, since the output of each fiber array light source becomes large, the number of fiber array light sources required for obtaining a desired output is reduced, and the cost of the pattern forming apparatus can be reduced.

In addition, the cladding diameter of the exit end of the optical fiber is made smaller than the cladding diameter of the incidence end, so that the diameter of the light emitting part is smaller, thereby achieving higher luminance of the fiber array light source. As a result, a pattern forming apparatus having a deeper depth of focus can be realized. For example, even in the case of ultra high resolution exposure having a beam diameter of 1 µm or less and a resolution of 0.1 µm or less, a deep depth of focus can be obtained, and high-speed and high-definition exposure can be achieved. Therefore, it is suitable for the exposure process of the thin film transistor (TFT) which requires high resolution.

In addition, the light irradiation means is not limited to a fiber array light source including a plurality of haptic laser light sources, and has, for example, one optical fiber that emits laser light incident from a single semiconductor laser having one light emitting point. A fiber array light source in which a fiber light source is arranged can be used.

As the light irradiation means having a plurality of light emitting points, for example, as shown in FIG. 3O, a laser array in which a plurality (for example, seven) of chip-shaped semiconductor lasers LD1 to LD7 are arranged on the heat block 110. Can be used. Further, a chip-shaped multi-cavity laser 110 is known in which a plurality of light emitting points 111a shown in FIG. 31A are arranged in a predetermined direction. Since the multi-cavity laser 111 can arrange the light emitting points with better positional accuracy than the case of arranging the semiconductor lasers on the chip, it is easy to combine the laser beams emitted from each light emitting point. However, when the number of light emitting points increases, the number of the light emitting points 111a is preferably 5 or less because warpage tends to occur in the multi-cavity laser 111 during laser production.

As the light irradiation means, the multi-cavity laser 111 or the plurality of multi-cavity lasers 111 on the heat block 110, as shown in Fig. 31B, in the same direction as the arrangement direction of the light emitting points 111a of each chip. The arranged multicavity laser can be used as the laser light source.

In addition, a combining laser light source is not limited to combining the laser light radiate | emitted from several chip-shaped semiconductor laser. For example, as shown in FIG. 32, a combined laser light source including a chip-shaped multi-cavity laser 111 having a plurality of light emitting points 111a can be used. This multiplexing laser light source is comprised with the multicavity laser 111, one multimode optical fiber 62, and the condensing lens 200. As shown in FIG. The multi-cavity laser 111 may be composed of, for example, a GaN laser diode having an oscillation wavelength of 405 nm.

In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 111a of the multi-cavity laser 111 is collected by the condenser lens 200 and is incident on the core 62a of the multimode optical fiber 62. . The laser light incident on the core 62a propagates through the inside of the optical fiber and is emitted in one piece.

The plurality of light emitting points 111a of the multi-cavity laser 111 are arranged in a width substantially the same as the core diameter of the multimode optical fiber 62, and at the same time as the condenser lens 200, the core diameter of the multimode optical fiber 62 Coupling efficiency of the laser beam B to the multimode optical fiber 62 can be improved by using a convex lens having almost the same focal length or a rod lens that only correlates the exit beam in the plane perpendicular to the active layer in the multi-cavity laser 111. It can increase.

Further, as shown in FIG. 33, a multi-cavity laser 111 having a plurality of (e.g., three) light emitting points is used, and a plurality of (e.g., nine) multi on the heat block 110 are used. A cavity laser light source having a laser array 140 in which the cavity lasers 111 are arranged at equal intervals may be used. The plurality of multi-cavity lasers 111 are arranged and fixed in the same direction as the arrangement direction of the light emitting points 111a of each chip.

The multiplexing laser light source is disposed between the laser array 140, the plurality of lens arrays 114 arranged in correspondence with the multi-cavity lasers 111, and the laser array 140 and the plurality of lens arrays 114. Two rod lenses 113, one multimode optical fiber 130, and a condenser lens 120, respectively. The lens array 114 includes a plurality of micro lenses corresponding to the light emitting points of the multi-cavity laser 110.

In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 111a of the plurality of multi-cavity lasers 111 is focused in a predetermined direction by the rod lens 113, and then the lens array 114 Parallel light is obtained by each micro lens. The parallel-beamed laser beam L is focused by the condenser lens 200 and enters the core 62a of the multimode optical fiber 62. The laser light incident on the core 62a propagates in one optical fiber and is emitted as one.

Moreover, the example of another combining laser light source is shown. As shown in FIGS. 34A and 34B, the combined wave laser light source includes an L-shaped heat block 182 having a cross section in the optical axis direction on a substantially rectangular heat block 180, thereby providing an accommodation space between two heat blocks. Formed. On the upper surface of the L-shaped heat block 182, a plurality of (e.g., two) multicavity lasers 111 in which a plurality of light emitting points (for example, five) are arranged in an array are provided. Equal intervals are arranged and fixed in the same direction as the arrangement direction of the light emitting point 111a

A recess is formed in the substantially rectangular heat block 180, and a plurality of light emitting points (for example, five) are arranged in an array on a space upper surface of the heat block 180 (for example, two). ) Multicavity laser 110 is disposed such that its light emitting point is located on the same vertical surface as the light emitting point of the laser chip disposed on the top surface of the heat block 182.

On the laser light output side of the multi-cavity laser 111, a correlated lens array 184 in which correlated lenses are arranged is arranged corresponding to the light emitting point 111a of each chip. In the correlated lens array 184, the longitudinal direction of each correlated lens coincides with the direction in which the enlarged angle of the laser beam is large (in the axial direction), and the smaller the enlarged angle of the width in each correlated lens is small. It is arrange | positioned so that it may coincide with a direction (axis direction). By integrating and integrating the correlated lenses in this manner, the space utilization efficiency of the laser light is improved, the output power of the combined laser light source can be increased, and the number of parts can be reduced, resulting in low cost.

In addition, at the laser light output side of the collimated lens array 184, one multimode optical fiber 62 and a condenser lens 200 for condensing and coupling a laser beam to the incidence end of the multimode optical fiber 62 are arranged. .

In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 111a of the plurality of multi-cavity lasers 111 disposed on the laser blocks 180 and 182 is parallel by the correlated lens array 184. The light is condensed and collected by the condenser lens 200 to enter the core 62a of the multimode optical fiber 62. The laser light incident on the core 62a propagates through the inside of the optical fiber and is emitted as one.

As described above, the haptic laser light source can achieve high output, in particular, by the multi-stage arrangement of the multi-cavity laser and the array of the correlated lenses. The use of this multiplexed laser light source makes it possible to configure a higher brightness fiber array light source and a bundled fiber light source, and is therefore particularly suitable as a fiber light source constituting the laser light source of the pattern forming apparatus of the present invention.

On the other hand, it is possible to store each of the combined laser light sources in the casing, and to take out the exit end of the multimode optical fiber 62 from the casing to configure the laser module.

In addition, an example has been described in which a fiber array light source is made high by combining another optical fiber whose core diameter is the same as that of the multimode optical fiber and whose clad diameter is smaller than the multimode optical fiber at the exit end of the multimode optical fiber of the combined laser light source. For example, a multimode optical fiber having a clad diameter of 125 μm, 80 μm, 60 μm, or the like may be used without coupling other optical fibers to the output end.

<< use cemetery designation means >>

As the use drawing part designation means, a light point position detecting means for detecting the position of a light spot which is a drawing unit on the exposed surface, and a drawing part used for realizing N-exposure based on the detection result by the light spot position detecting means. It is preferable to provide at least the drawing part selection means to select.

Hereinafter, the example of the designation method of the drawing part used for N-exposure by the said use drawing part designation means is demonstrated.

(1) Designation method of use drawing part in single exposure head

In the present embodiment (1), when the pattern forming material 10 is subjected to the double exposure to the pattern forming material 12, the resolution deviation and the density unevenness caused by the installation angle error of each exposure head 30 are not shown. A designation method of the use drawing part for reducing an ideal double exposure is demonstrated.

As the set inclination angle θ in the column direction of the drawing section (micromirror 58) with respect to the scanning direction of the exposure head 30, 1024 rows x 256 rows which can be used in an ideal state without an installation angle error of the exposure head 30, etc. An angle slightly larger than the angle θ _ideal for precise double exposure is used using the _{drawing part} of.

This angle θ _ideal is the number N of exposures in N, the number s in the column direction of the usable micromirrors 58, the spacing p in the column direction of the usable micromirrors 58, and the state where the exposure head 30 is inclined. Regarding the pitch δ of the scan line formed by the micromirrors in Equation 1,

spsinθ _ideal ≥Nδ (Equation 1)

Is given by In the present embodiment, since the DMD 36 has a plurality of micromirrors 58 having the same vertical and horizontal arrangement intervals as described above, they are arranged in a rectangular lattice shape.

pcosθ _ideal = δ (Equation 2)

Equation 1 is

stanθ _ideal = N (Equation 3)

Becomes In the present embodiment (1), as described above, since s = 256 and N = 2, the angle θ _ideal is about 0.45 degrees according to the above expression (3). Therefore, for example, as the set tilt angle θ, an angle of about 0.50 degrees may be used. The pattern forming apparatus 10 is initially adjusted so that the installation angle of each exposure head 30, that is, each DMD 36, becomes an angle close to this set inclination angle θ within the adjustable range.

FIG. 10 is a view showing an example of unevenness occurring in a pattern on an exposed surface under the influence of an installation angle error and pattern distortion of one exposure head 30 in the pattern forming apparatus 10 initially adjusted as described above. It is also. In the following figures and descriptions, the light spot in the mth row is r (m) and the light spot in the nth column with respect to a light spot that is a writer unit constituting an exposure area on the exposed surface generated by each drawing unit (micromirror). (n) and the light spots in the mth nth column are denoted by P (m, n), respectively.

The upper part of FIG. 10 shows a pattern of a group of light spots of usable micromirrors 58 projected onto the exposed surface of the pattern forming material 12 with the stage 14 stationary, the lower part being shown in the upper part. When the continuous exposure is performed by moving the stage 14 in the state where the light spot group pattern as shown in the figure is shown, the state of the exposure pattern formed on the to-be-exposed surface is shown.

On the other hand, Fig. 10 shows the exposure pattern by the odd rows and the even rows of the micromirrors 58 usable for convenience of explanation, but the exposure patterns on the actual to-be-exposed surface represent these two exposure patterns. It is overlapping.

In the example of Fig. 10, the setting inclination angle θ is a result of using an angle slightly larger than the angle θ _ideal , and since the fine adjustment of the installation angle of the exposure head 30 is difficult, the actual installation angle and the setting inclination angle θ are As a result of having an error, density spots appear in any area on the exposed surface. Specifically, the exposure is overexposed to the ideal double exposure in the overlapping exposure area formed on the exposed surface formed by the plurality of mausoleum columns in both the exposure pattern by the odd-numbered micromirrors and the exposure pattern by the even-numbered micromirrors. There is an area that becomes more verbose and there is a concentration stain.

In addition, the example of FIG. 10 is an example of the pattern distortion which appears on an exposure surface, and the "angle distortion" which the inclination angle of each pixel string projected on the exposure surface is uniform has disappeared. As the cause of the angular distortion, various aberrations and alignment differences in the optical system between the DMD 36 and the exposure surface, distortion of the DMD 36 itself, an arrangement error of the micromirror, and the like can be listed.

The angular distortion shown in the example of FIG. 10 is a distortion in which the inclination angle with respect to the scanning direction is smaller in the left column of the diagram, and in the right column of the diagram. As a result of this angular distortion, the exposed surface image shown on the left side of the figure is small, and the exposed surface image shown on the right side of the figure is large.

In order to reduce density spots in the overlapping exposure area on the exposed surface formed by the plurality of seedling rows as described above, a slit 28 and a photodetector set are used as the light spot position detecting means, and each yarn is exposed for each exposure head 30. The inclination angle θ 'is specified, and the processing unit for selecting the micromirror used for the actual exposure is performed using the arithmetic unit connected to the photodetector as the drawing unit selection means based on the real inclination angle θ'. .

The actual inclination angle θ 'is specified by the angle between the column direction of the light spot on the exposed surface and the scanning direction of the exposure head in the state in which the exposure head is inclined based on the at least two light spot positions detected by the light spot position detecting means.

Hereinafter, the specification and use pixel selection process of the real tilt angle θ 'will be described with reference to FIGS. 11 and 12.

-Specification of the actual inclination angle θ '-

FIG. 11 is a top view showing the positional relationship between the exposure area 32 and the corresponding slit 28 by one DMD 36. The size of the slit 28 is a size that sufficiently covers the width of the exposure area 32.

In the example of the present embodiment (1), the angle formed by the light spot array of the 512th column located almost at the center of the exposure area 32 and the scanning direction of the exposure head 30 is measured as the actual tilt angle θ '. Specifically, the light spots P (1, 512) on the corresponding exposed surfaces are turned on with the micromirrors 58 in the first row 512 columns and the micromirrors 58 in the 256 th row 512 columns on the DMD 36 turned on. And the positions of P (256, 512) are detected, and the angle formed between the straight line connecting them and the scanning direction of the exposure head is specified as the real tilt angle θ '.

12 is a top view illustrating a detection method of the positions of light spots P (256, 512).

First, the stage 14 is slowly moved while the micromirrors 58 of the 256th row and the 512th column are turned on to relatively move the slit 28 along the Y-axis direction, and the light spots P (256, 512) are located upstream. The slit 28 is positioned at an arbitrary position so as to be between the slit 28a and the slit 28b on the downstream side. The intersection coordinates of the slit 28a and the slit 28b at this time are called (X0, Y0). The values of these coordinates (X0, Y0) are determined and recorded at the moving distance of the stage 14 to the above position indicated by the drive signal given to the stage 14, and the X-direction position of the known slit 28.

Next, the stage 14 is moved and the slit 28 is moved relative to the right side in FIG. 12 along the Y axis. As shown by the dashed-dotted line in Fig. 12, the stage 14 is stopped at the place where the light at the light spots P (256, 512) passes through the slit 28b on the left side and is detected by the photodetector. The intersection coordinates (X0, Y1) of the slit 28a and the slit 28b at this time are recorded as the positions of the light points P (256, 512).

Next, the stage 14 is moved in the opposite direction, and the slit 28 is moved relative to the left side in FIG. 12 along the Y axis. As shown by the dashed-dotted line in FIG. 12, the stage 14 is stopped at the place where the light at the light spots P (256, 512) passes through the slit 28a on the right side and is detected by the photodetector. The intersection coordinates (X0, Y2) of the slit 28a and the slit 28b at this time are recorded as the positions of the light points P (256, 512).

Based on the above measurement results, the coordinates (X, Y) indicating the position on the exposed surface of the light spot P (256, 512) are determined by the calculation of X = X0 + (Y1-Y2) / 2 and Y = (Y1 + Y2) / 2. do. The same measurement also determines the coordinates indicating the position of P (1, 512), and derives the inclination angle formed by the straight line connecting the respective coordinates and the scanning direction of the exposure head 30, and specifies this as the real inclination angle θ '. do.

－Choice of use cemetery part-

The computing device connected to the photodetector using the actual tilt angle θ 'specified in this manner is represented by the following equation (4).

ttanθ '= N (Equation 4)

The natural number T closest to the value t satisfying the relationship of D is derived, and a process of selecting the micromirrors in the first to the T rows on the DMD 36 as the micromirrors actually used in the present exposure is performed. Thereby, it can select as a micromirror which actually uses a micromirror so that the area sum total of the area which becomes overexposure and the area which becomes underexposure with respect to ideal double exposure in the exposure area around column 512 is minimum.

Here, instead of deriving the natural number closest to the above value t, the minimum natural number greater than or equal to the value t may be derived. In that case, it is possible to select as a micromirror which actually uses the micromirror so that the area of the overexposure of the ideal double exposure in the exposure area near the 512th column is minimized and the area underexposure is not generated. have.

Moreover, it is also good to derive the maximum natural number below the value t. In this case, it is possible to select a micromirror that actually uses the micromirror so that the area of the underexposure of the ideal double exposure in the exposure region near the 512th column is minimized and the region of overexposure is not generated. have.

FIG. 13 is an explanatory diagram showing how unevenness on the exposure surface shown in FIG. 10 is improved in exposure using only the light spots generated by the micromirror selected as the micromirror actually used as described above.

In this example, it is assumed that T = 253 is derived as the natural number T described above, and the micromirrors of the first to the 253rd rows are selected. For the micromirrors of the 254th to the 256th rows that are not selected, a signal for setting the angle at an off state is always sent by the drawing unit control means, so that the micromirrors are not substantially involved in exposure. As shown in Fig. 13, the overexposure and underexposure are almost completely eliminated in the exposure area near the 512th row, so that uniform exposure extremely close to the ideal double exposure is realized.

On the other hand, in the area on the left side of FIG. 13 (near c (1) in FIG.), The inclination angle of the light spot on the exposed surface is larger than the inclination angle of the light beam in the area near the center (near c (512) in FIG.) Due to the angle distortion. Becomes smaller. Therefore, in the exposure using only the micromirror selected based on the actual tilt angle θ 'measured on the basis of c (512), the exposure is performed against the ideal double exposure in each of the exposure patterns with even rows and the exposure patterns with odd rows. There is a little area to be lacking.

However, in the actual exposure pattern which overlaps the exposure pattern by odd-numbered rows and the exposure pattern by even-numbered rows, the exposure-deficient regions are complemented with each other, and the exposure unevenness due to the angle distortion is minimized by the complementary effect by double exposure. can do.

Incidentally, in the region on the right side of FIG. 13 (near c (1024) in FIG.), The inclination angle of the light beam in the region near the center (near c (512) in the diagram) on the exposed surface due to the angle distortion. Greater than Therefore, in the exposure by the micromirror selected based on the actual tilt angle θ 'measured on the basis of c (512), as shown in the drawing, a region slightly overexposed to the ideal double exposure occurs.

However, the actual exposure pattern formed by overlapping the exposure pattern by odd-numbered and even-numbered rows is complemented with the areas of overexposure, so that the density unevenness due to angular distortion is minimized by the complementary effect by double exposure. You can do

In the present embodiment (1), as described above, the actual inclination angle θ 'of the light beams of the 512th column is measured, and the micromirror is used based on T derived by Equation (4) using the real inclination angle θ'. Although (58) was selected, as a specific method of the said real inclination angle (theta) ', the several real inclination angle which the column direction (light spot row) of the several drawing part and the scanning direction of the said exposure head make, respectively, measure the average value and the median value, respectively. , Any of the maximum value and the minimum value may be specified as the actual tilt angle θ ', and the form of selecting the micromirror actually used at the time of actual exposure may be selected by the above equation (4).

If the average value or the intermediate value is a real inclination angle θ ', exposure with good balance between a region overexposed and a region underexposed with respect to the ideal N-level exposure can be realized. For example, the total area of the area | region which becomes overexposure and the area | region which are overexposure amount is suppressed to the minimum, and the drawing unit number (light spot number) of the area | region which becomes overexposure, and the number of seedling units (light spot number) of the area which become overexposure It is possible to realize exposure so that) is the same.

Further, if the maximum value is a real inclination angle θ ', it is possible to realize exposure in which the exclusion of a region that is overexposed to the ideal N-exposure is more important. For example, the area of a region that becomes underexposed is minimized. It is possible to suppress the exposure and to realize the exposure so that a region that becomes overexposed does not occur.

If the minimum value is a real inclination angle θ ', the exposure can be realized more important than the ideal N-exposure of the exclusion of the region which becomes underexposure. For example, the area of the region which becomes overexposure can be minimized. It is possible to suppress the exposure and to realize the exposure so as not to produce a region which becomes underexposed.

On the other hand, the specification of the real tilt angle θ 'is not limited to the method based on the position of at least two light spots among the rows (light spot strings) of the same drawing part. For example, the angle obtained from the positions of one or a plurality of light spots in the same mausoleum column c (n) and the positions of one or a plurality of light spots in the column near the c (n) may be specified as the real tilt angle θ '. .

Specifically, one light spot position in c (n) and one or a plurality of light spot positions included in a straight line and in the vicinity of the light spot line along the scanning direction of the exposure head are detected, and the actual tilt angle θ from these position information. 'Can be obtained. Further, the angle obtained based on the position of at least two light spots (for example, two light spots arranged to cover c (n)) near the c (n) column may be specified as the real inclination angle θ '. good.

As mentioned above, according to the designation method of the using drawing part of this embodiment (1) using the pattern forming apparatus 10, the resolution deviation and density | concentration unevenness by the influence of the installation angle error and pattern distortion of each exposure head are reduced, The ideal N-level exposure can be realized.

(2) Designation method of use drawing part between plural exposure heads <1>

In the present embodiment (2), when the pattern forming material 10 is subjected to double exposure by the pattern forming apparatus 10, between the heads which are overlapping exposure areas on the exposed surface formed by the plurality of exposure heads 30. It is possible to reduce the resolution deviation and density irregularity caused by the ideal state and difference of the relative positions of the two exposure heads (for example, the exposure heads 30 ₁₂ and 30 ₂₁ ) in the X-axis direction in the connection region of the The designation method of the using drawing part for realizing double exposure is demonstrated.

As long as there is no installation angle error of the exposure head 30 as the setting inclination angle θ of each exposure head 30, that is, each DMD 36, the drawing part micromirrors 58 of 1024 rows x 256 rows that can be used can be used. It is assumed that the angle θ _ideal which is exactly double exposure using is used.

The angle θ _ideal is obtained in the same manner as in the above-described embodiment (1) by the above formulas (1) to (3). In this embodiment (2), the pattern forming apparatus 10 shall be initially adjusted so that the installation angle of each exposure head 30, ie, each DMD 36, may become this angle (theta) _ideal .

Fig. 14 shows the relative position of the two exposure heads (for example, the exposure heads 30 ₁₂ and 30 ₂₁ ) with respect to the X-axis direction in the pattern forming apparatus 10 initially adjusted as described above. It is explanatory drawing which showed the example of the density | concentration unevenness generate | occur | produced in the pattern on a to-be-exposed surface by influence of a difference. The difference in the relative position with respect to the X-axis direction of each exposure head may arise because fine adjustment of the relative position between exposure heads is difficult.

The upper part of FIG. 14 shows usable micromirrors of the DMD 36 of the exposure heads 30 ₁₂ and 30 ₂₁ projected onto the exposed surface of the pattern forming material 12 with the stage 14 stationary. Fig. 58 shows the pattern of the light spot group. The lower portion of FIG. 14 shows the exposure pattern 32 ₁₂ and the state of the exposure pattern formed on the exposed surface when the stage 14 is moved continuously while the stage 14 is moved in the state where the light spot group pattern as shown in the upper portion is shown. (32 ₂₁ ).

On the other hand, in Fig. 14, the exposure patterns of the pixel columns group A and the exposure patterns of the pixel columns group B are shown by dividing every other exposure pattern of the micromirrors 58 usable for convenience of explanation. The pattern is a superposition of these two exposure patterns.

In the example of FIG. 14, the exposure pattern by the pixel column group A and the exposure by the pixel column group B are obtained as a result of the ideal state and difference of the relative position between the exposure heads 30 ₁₂ and 30 ₂₁ in the X-axis direction described above. In both of the patterns, an excessive amount of exposure occurs in the connection area between the heads of the exposure areas 32 ₁₂ and 32 ₂₁ than in the ideal double exposure state.

In this embodiment (2), the slit 28 and the light as the light spot position detecting means are provided in order to reduce the density unevenness appearing in the connection region between the heads formed on the exposed surface by the plurality of exposure heads as described above. Using a set of detectors, the position (coordinate) is detected with respect to several light spots constituting a connection area between the heads formed on the exposed surface among the light spot groups of the exposure heads 30 ₁₂ and 30 ₂₁ . do. Based on the position (coordinate), the processing unit for selecting the micromirror used for the actual exposure is performed using the computing device connected to the photodetector as the drawing unit selection means.

Detection of position (coordinates)

FIG. 15 is a top view showing the positional relationship of the slit 28 corresponding to the exposure areas 32 ₁₂ and 32 ₂₁ similar to FIG. 14. Size of the slits 28. An exposure head (30, ₁₂₎ and (30, ₂₁₎ the exposure completion region 34 substantially covers the size of the width of the overlapping portions between, that is, the exposure head (30, ₁₂₎ and (30, ₂₁₎ by It is large enough to cover the connection area between the heads formed on the surface to be exposed by.

FIG. 16 is a top view illustrating a detection method when detecting the positions of the light spots P (256, 1024) of the exposure area 32 ₂₁ as an example.

First, the stage 14 is slowly moved while the micromirrors in the 256th row and the 1024th column are turned on to relatively move the slit 28 along the Y-axis direction, and the light spots P (256, 1024) are located at the upstream side of the slit ( Position the slit 28 at an arbitrary position so as to be between 28a) and the downstream slit 28b. The intersection coordinates of the slit 28a and the slit 28b at this time are called (X0, Y0). The values of these coordinates (X0, Y0) are determined and recorded at the position of the movement of the stage 14 and the X-direction position of the known slit 28 up to the position indicated by the drive signal given to the stage 14.

Next, the stage 14 is moved and the slit 28 is moved relative to the right side in FIG. 16 along the Y axis. As shown by the dashed-dotted line in Fig. 16, the light on the light spots P (256, 1024) passes through the slit 28b on the left side and stops the stage 14 where it is detected by the photodetector. The intersection coordinates (X0, Y1) of the slit 28a and the slit 28b at this time are recorded as the positions of the light spots P (256, 1024).

Next, the stage 14 is moved in the opposite direction and the slit 28 is moved relative to the left side in FIG. 16 along the Y axis. As shown by the dashed-dotted line in FIG. 16, the light at the light spots P (256, 1024) passes through the slit 28a on the right side and stops the stage 14 where it is detected by the photodetector. The coordinates (X0, Y2) of the intersections of the slit 28a and the slit 28b at this time are recorded as light points P (256, 1024).

Based on the above measurement results, the coordinates (X, Y) indicating the position on the exposed surface of the light spot P (256, 1024) are determined by the calculation of X = X0 + (Y1-Y2) / 2 and Y = (Y1 + Y2) / 2. .

Specific-of the unused cemetery part

In the example of FIG. 14, first, the position of the light spot P 256, 1 of the exposure area 32 ₁₂ is detected by the set of slits 28 and the photodetector as the light spot position detecting means. Subsequently, the positions of the respective light spots on the light spot r r 256 in the 256th row of the exposure area 32 ₂₁ are detected in the order of P (256, 1024), P (256, 1023) ..., and the exposure area 32 _12. The detection operation is terminated where the light point P (256, n) of the exposure area 32 ₂₁ indicating the X coordinate larger than the light point P (256, 1) of the () is detected. And the micromirror corresponding to the light spot which comprises c (1024) in the light spot light spot c (n + 1) of the exposure area | region 32 ₂₁ is identified as a micromirror (unused drawing part) which is not used at the time of this exposure.

For example, in FIG. 14, the light spots P (256, 1020) of the exposure area 32 ₂₁ represent the X coordinate larger than the light spots P (256, 1) of the exposure area 32 ₁₂ , and the exposure area 32 If the detection operation is terminated where the light points P (256, 1020) of ₂₁ are detected, rows 1021 to 1024 of the exposure area 32 ₂₁ corresponding to the portion 70 covered with diagonal lines in FIG. The micromirror corresponding to the light point which comprises is specified as the micromirror which is not used at the time of this exposure.

Next, the position of the light spot P (256, N) of the exposure area 32 ₁₂ is detected with respect to the number N of exposures among N. In the present embodiment (2), since N = 2, the positions of the light spots P (256, 2) are detected.

Subsequently, among the light spots in the exposure area 32 ₂₁ , the positions of the light spots constituting the rightmost 1020 columns except for those specified as the light spots corresponding to the micromirrors not used at the time of the exposure described above. A light point that detects P (1, 1020), P (2, 1020) ... in order from P (1, 1020) and shows an X coordinate larger than the light point P (256, 2) of the exposure area 32 ₁₂ . The detection operation is terminated where P (m, 1020) is detected.

Then, in the arithmetic unit connected to the photodetector, the light spot P (m, 1020) of the X coordinate, and the exposed areas (32 ₂₁₎ of the light spot P (256, 2) of the exposure area (32 ₁₂₎ and P ( of exposed areas (32 ₂₁₎ compares the X coordinate of the m-1, 1020) the light spot p (m, 1020), X-coordinate-side is closer to the X coordinate of the light spot p (256, 2) of the exposure area (32 ₁₂₎ of the In this case, the micromirrors corresponding to the light points P (1, 1020) to P (m-1, 1020) of the exposure area 32 ₂₁ are specified as the micromirrors not used during this exposure.

Further, the exposed areas (32 _21), when close to the X-coordinate of the light spot P (256, 2) of the exposure area (32 _21), the light spot P (m-1, 1020), X-coordinate-side the exposed areas (32 ₁₂₎ of the The micromirrors corresponding to the light points P (1, 1020) to P (m-2, 1020) are identified as micromirrors not used for this exposure.

Further, the light points P (256, N-1) of the exposure area 32 ₁₂ , that is, the positions of the light points P (256, 1) and the positions of the respective light points constituting the 1019 column which is the next column of the exposure area 32 ₂₁ . The same detection process and the micromirror not used are also specified.

As a result, for example, the micromirror corresponding to the light point which comprises the area | region 72 covered by hatching in FIG. 17 is added as a micromirror which is not used at the time of an actual exposure. These micromirrors are always signaled to set the angle of the micromirrors to the off-state angle so that their micromirrors are practically not used for exposure.

Thus particular a micro mirror is not used during the actual exposure of, said that no other than the micro-mirror that is used by selecting a micro-mirror used in the actual exposure of the exposure region (32 ₁₂₎ and (32 ₂₁₎ In the connection area between the heads, the total area of the overexposure area and the overexposure area with respect to the ideal double exposure can be minimized. A very close uniform exposure can be realized.

On the other hand, the X coordinate and the exposed areas (32 ₂₁₎ of the example of the light spot P (256, 2) of the exposure area (32 ₂₁₎ in particular when the light spots constituting the area 72 covered by hatching in FIG. 17 Without comparing the X coordinates of the light points P (m, 1020) and P (m-1, 1020), that is, at the light points P (1, 1020) of the exposure area 32 ₂₁ , P (m-2, 1020) May be specified as a micromirror not used during the present exposure. In such a case, in the connection area between the heads, the area of the overexposure area is minimized with respect to the ideal double exposure, and the micro mirror which actually uses the micro mirror can be selected so that there is no area underexposure. have.

Further, the light spots P (1, 1020), a micro mirror may be specified as micro mirrors not to use in the exposure corresponding to P (m-1, 1020) in the exposure area (32 _21). In such a case, in the connection area between the heads, the area of the area underexposure with respect to the ideal double exposure is minimized, and the micromirror can be selected as the micromirror which actually uses the micromirror so as not to produce an area with excessive exposure. have.

In addition, in the connection area between the heads, the number of drawing units (light point number) in the area overexposed and the number of drawing units (light point number) in the area underexposed to the ideal double drawing are actually used. You may select a micromirror.

According to the designation method of the use drawing part of this embodiment (2) using the pattern forming apparatus 10 as mentioned above, the resolution deviation and density | contrast spot which originate in the difference of the relative position with respect to the X-axis direction of a some exposure head are reduced. In addition, an ideal N-level exposure can be realized.

(3) The method of designating the use drawing part between a plurality of exposure heads <2>

In this embodiment (3), when the pattern forming material 10 performs the double exposure with respect to the pattern forming material 12, it is between heads which are overlapping exposure areas on the to-be-exposed surface formed by the some exposure head 30. FIG. In the connection area of, the ideal state and difference of the relative positions of the two exposure heads (for example, the exposure heads 30 ₁₂ and 30 ₂₁ ) with respect to the X-axis direction, the installation angle error of each exposure head and the two The method of designating the use drawing part for reducing the resolution deviation and density | concentration unevenness resulting from the relative installation angle error between exposure heads, and realizing ideal double exposure is demonstrated.

1024 rows x 256 rows of drawing parts (micromirror 58) that can be used as long as there is no installation angle error of the exposure head 30 as the set inclination angle of each exposure head 30, that is, each DMD 36. Use an angle slightly larger than the angle θ _ideal for double exposure.

This angle θ _ideal is a value obtained in the same manner as in the embodiment (1) using the above formulas 1 to 3, and in the present embodiment, as described above, since s = 256 and N = 2, the angle θ _ideal is about 0.45 degrees. to be. Therefore, the set tilt angle θ may be, for example, an angle of about 0.50 degrees. It is assumed that the pattern forming apparatus 10 is initially adjusted so that the installation angle of each exposure head 30, that is, each DMD 36, becomes an angle close to this set inclination angle θ within the adjustable range.

FIG. 18 shows two exposure heads (for example, the exposure head 30 ₁₂ ) in the pattern forming apparatus 10 in which the installation angles of the respective exposure heads 30, that is, the respective DMDs 36 are initially adjusted as described above. (30 ₂₁ )) and an example of unevenness occurring in the pattern on the exposure surface by the influence of the difference in the relative installation angle error and relative position between each of the exposure heads 30 ₁₂ and 30 ₂₁ . It is also.

In the example of FIG. 18, as shown in the example of FIG. 14, exposure by a group of light spots (pixel columns A and B) as a result of the difference in the relative positions of the exposure heads 30 ₁₂ and 30 ₂₁ in the X-axis direction is shown. In the exposure area overlapping on the coordinate axis orthogonal to the scanning direction of the exposure head on the exposed surfaces of the exposure areas 32 ₁₂ and 32 ₂₁ in both of the patterns, the exposure amount excess area 74 is larger than the ideal double exposure state. Occurs and this causes concentration staining.

In addition, in the example of FIG. 18, the setting inclination angle θ of each exposure head is slightly larger than the angle θ _ideal that satisfies Equation (1) above, and the actual installation angle is difficult because fine adjustment of the installation angle of each exposure head is difficult. Is exposed by the light spot group (pixel row groups A and B) in every other area as a result of shifting from the set inclination angle θ as described above, even in an area other than the overlapping exposure area on a coordinate axis orthogonal to the scanning direction of the exposure head on the exposed surface. In the connection area between the seedling rows, which are overlapping exposure areas on the exposed surface formed by a plurality of seedling rows on both sides of the pattern, a region 76 becomes overexposed than the ideal double exposure state, which causes a new density unevenness. .

In the present embodiment (3), first, a use pixel selection process for reducing density spots caused by the influence of the difference between the installation angle error and the relative installation angle of each of the exposure heads 30 ₁₂ and 30 ₂₁ is performed.

Specifically, a real tilt angle θ 'is specified for each of the exposure heads 30 ₁₂ and 30 ₂₁ using a set of slits 28 and a photodetector as the light spot position detecting means, and the real tilt angle θ' Based on the drawing unit selection means, a processing unit connected to a photodetector is used to select a micromirror used for actual exposure.

Specific of real tilt angle θ '

The specification of the real inclination angle θ 'indicates the positions of the light spots P (1, 1) and P (256, 1) in the exposure area 32 ₁₂ with respect to the exposure head 30 ₁₂ , and exposure with respect to the exposure head 30 ₂₁ . The positions of the light spots P (1, 1024) and P (256, 1024) in the area 32 ₂₁ are respectively detected by the set of slits 28 and the photodetectors used in the above-described embodiment (2), and a straight line connecting them This is done by measuring the angle between the inclination angle of the lens and the scanning direction of the exposure head.

Specific-of the unused cemetery part

Using the specified real tilt angle θ ', the computing device connected to the photodetector was the same as the computing device in Embodiment (1) described above.

ttanθ '= N (Equation 4)

The natural number T closest to the value t satisfying the relation of D is derived for each of the exposure heads 30 ₁₂ and 30 ₂₁ , and the micro mirrors of the 256-th row from the (T + 1) -th row on the DMD 36 are viewed. The process of identifying as a micromirror that is not used is performed.

For example, if T = 254 for the exposure head 30 ₁₂ and T = 255 for the exposure head 30 ₂₁ , the light spots constituting the diagonally covered portions 78 and 80 in FIG. 19 are obtained. The micromirror corresponding to this is specified as a micromirror not used for this exposure. This minimizes the total area of the overexposed area and the underexposed area with respect to the ideal double exposure in each area other than the connection area between the exposure area 32 ₁₂ and the head in the 32 ₂₁ . Can be.

Here, instead of deriving the natural number closest to the above value t, the minimum natural number greater than or equal to the value t may be derived. In that case, in each area other than the connection area between the heads, which are overlapping exposure areas on the exposed surface formed by the plurality of exposure heads of the exposure areas 32 ₁₂ and 32 ₂₁ , the exposure dose excess area with respect to the ideal double exposure. This can be minimized and the exposure shortage area can be prevented from occurring.

Alternatively, the maximum natural number below the value t may be derived. In that case, the exposure areas 32 ₁₂ and 32 ₂₁ are insufficient in exposure to the ideal double exposure in each area other than the connection area between the heads which are overlapping exposure areas on the exposed surface formed by the plurality of exposure heads. The area of the area | region used becomes the minimum and it can prevent that the area | region which becomes overexposure occurs.

In each area other than the connection area between the heads, which are overlapping exposure areas on the exposed surface formed by the plurality of exposure heads, the number of writer units (light points) and insufficient exposure of the areas that are overexposed to the ideal double exposure are obtained. You may specify the micromirror which is not used at the time of this exposure so that the drawing unit number (light spot number) of an area may be the same.

Subsequently, the same processing as that of the present embodiment (3) described with reference to FIGS. 14 to 17 is carried out with respect to the micromirrors corresponding to the light points other than the light points constituting the regions 78 and 80 covered with diagonal lines in FIG. 19, the micromirror corresponding to the light spot which comprises the area | region 82 covered with the diagonal line and the area | region 84 covered with hatching is specified, and is added as a micromirror which is not used at the time of this exposure.

These micro-mirrors specified as not used at the time of exposure are sent by the above-mentioned drawing element control means to set a signal to be set at an angle in the always-off state so that their micromirrors do not substantially participate in exposure.

According to the designation method of the use drawing part of this embodiment (3) which used the pattern forming apparatus 10 as mentioned above, the difference of the relative position with respect to the X-axis direction of a some exposure head, the installation angle error of each exposure head, Resolution variation and density unevenness caused by the relative installation angle error between the exposure heads can be reduced, and ideal N-level exposure can be realized.

As mentioned above, although the use drawing part designation method by the pattern forming apparatus 10 was demonstrated in detail, the said embodiment (1)-(3) is only an example, and various changes are possible which do not deviate from the range of this invention. Do.

In addition, although the said embodiment (1)-(3) used the set of the slit 28 and the single cell type photodetector as a means for detecting the light spot position on a to-be-exposed surface, it is not limited to this, It uses any form of thing For example, a two-dimensional detector or the like may be used.

Further, in the above embodiments (1) to (3), the real tilt angle θ 'is obtained from the light point position detection result on the exposed surface by the slit 28 and the set of the photodetectors, and is used based on the real tilt angle θ'. Although a micromirror is selected, a form in which a usable micromirror is selected without deriving a real tilt angle θ 'may be used. Further, for example, a reference exposure using all available micromirrors, and the reference exposure result is a form of manually designating a micromirror used by an operator by visual observation or by confirming resolution or density spots, etc., is also within the scope of the present invention. Included in

On the other hand, the pattern distortion generated on the exposed surface has various forms in addition to the angle distortion described in the above examples.

As an example, as shown in FIG. 20A, there is a form of magnification distortion in which the light rays of the micromirrors 58 on the DMD 36 have reached the exposure area 32 on the exposure surface at different magnifications.

As another example, as shown in FIG. 20B, in the micromirrors 58 on the DMD 36, there is also a form of beam diameter distortion in which the light beam reaches the exposure area 32 on the exposure surface at a different beam diameter. These magnification distortions and beam diameter distortions mainly occur due to various aberrations or alignment differences in the optical system between the DMD 36 and the exposure surface.

As another example, there is also a form of light amount distortion in which the light rays of the micromirrors 58 on the DMD 36 have reached the exposure area 32 on the exposure surface at different light amounts. This light quantity distortion is not only various aberrations or alignment differences, but also the positional dependence of the transmittance of the optical elements (for example, the lenses 52 and 54 of FIG. 5 as one lens) and the DMD ( 36) It is caused by the amount of light by itself. Pattern distortions in these forms also cause unevenness of resolution or density in the pattern formed on the exposure surface.

According to said embodiment (1)-(3), after selecting the micromirror actually used for this exposure, the residual element of the pattern distortion of these forms also applies to double exposure similarly to the residual element of the said angle distortion. Although it can be made even by the complementary effect by this, you may remove the influence of pattern distortion by exposing the light modulated by the said optical modulation means through a micro lens array, an opening array, an imaging optical system, etc.

Microlens Array

There is no restriction | limiting in particular as said microlens array, Although it can select suitably according to the objective, For example, what arrange | positioned the microlens which has an aspherical surface which can correct the aberration by the distortion of an emission surface in the said drawing part is mentioned preferably. Can be.

There is no restriction | limiting in particular as said aspherical surface, Although it can select suitably according to the objective, For example, a toric surface is preferable.

Hereinafter, the micro lens array, the aperture array, the imaging optical system, and the like will be described with reference to the drawings.

35A shows the DMD 36, light irradiation means 144 for irradiating laser light to the DMD 36, lens systems (imaging optical systems) 454 and 458 for magnifying and imaging the laser light reflected from the DMD 36; A microlens array 472 in which a plurality of microlenses 474 are arranged corresponding to each drawing part of the DMD 36, and a plurality of openings 478 are provided in correspondence with each microlens of the microlens array 472; An exposure head composed of lens systems (imaging optical systems) 480 and 482 for forming the aperture array 476 and the laser light passing through the aperture on the pattern forming material 12 (exposed surface).

36 shows the result of measuring the plan view of the reflecting surface of the micromirror 58 constituting the DMD 36. In Fig. 36, the same height positions of the reflection surfaces are connected by contour lines, and the pitch of the contour lines is 5 nm. On the other hand, the x direction and the y direction shown in FIG. 36 are two diagonal directions of the micro mirror 58, and the micro mirror 58 rotates as described above with respect to the rotation axis extending in the y direction. 37A and 37B show the height position displacement of the reflecting surface of the micromirror 58 along the x direction and the y direction, respectively.

36, 37A, and 37B, distortion exists in the reflecting surface of the micromirror 58, and in particular, in the center of the mirror, distortion in one diagonal direction (y direction) is different in the diagonal direction (x direction). Greater than the distortion of). For this reason, a problem may arise that the shape is distorted at the condensing position of the laser light B condensed by the microlens 55a of the microlens array 55.

In order to prevent the above problem in the pattern formation method of the present invention, the microlens 55a of the microlens array 55 has a special shape different from the conventional one. This point will be described in detail below.

38A and 38B show the front shape and the side shape of the micro lens array 55 as a whole, respectively. These figures also indicate the dimensions of each part of the microlens array 55, and their units are mm. In the pattern forming method of the present invention, as described above with reference to FIG. 4, the 1024 x 256 rows of micromirrors 58 of the DMD 36 are driven, and the microlens array 55 is correspondingly moved in the lateral direction. The rows of 1024 micro lenses 55a are arranged in parallel in the longitudinal direction. In FIG. 38A, the arrangement order of the microlens arrays 55 is indicated by j in the lateral direction and by k in the longitudinal direction.

39A and 39B show front and side shapes of one micro lens 55a in the micro lens array 55, respectively. 39A, the contour lines of the microlenses 55a are shown side by side. The cross section on the light exit side of each micro lens 55a is referred to as an aspherical shape for correcting aberration due to distortion of the micromirror 58 reflecting surface. More specifically, the microlens 55a is called a toric lens, and has a radius of curvature Rx = -0.125 mm in the direction optically corresponding to the x direction, and a radius of curvature Ry in the direction corresponding to the y direction Ry = -0.1 mm. to be.

However, the condensing state of the laser light B in the cross sections parallel to the x direction and the y direction is as shown in Figs. 40A and 40B, respectively. That is, comparing the inside of the cross section parallel to the y direction and the inside of the cross section parallel to the y direction is smaller than the radius of curvature of the microlens 55a, and the focal length is shorter.

41, 42, 43 and 44 show the results of the simulation of the beam diameter by the calculator in the vicinity of the condensing position (focal position) of the microlens 55a when the microlens 55a has the shape described above. 45, 46, 47, and 48 show the results of the same simulation for the case where the microlens 55a has a spherical shape with a radius of curvature Rx = Ry = −0.1 mm for comparison. In addition, in each figure, the value of z represents the evaluation position of the pint direction of the microlens 55a by distance from the beam exit surface of the microlens 55a.

In addition, the surface shape of the micro lens 55a used by the said simulation is calculated by the following formula.

[1]

In the above formula, Cx means curvature in the x direction (= 1 / Rx), Cy means curvature in the y direction (= 1 / Ry), and X is the distance from the lens optical axis O in the x direction. Y means the distance from the lens optical axis O in the y direction.

As is clear from FIGS. 41 to 44 and 45 to 48, in the pattern formation method of the present invention, the focal length in the cross section parallel to the y direction of the microlens 55a is smaller than the focal length in the cross section parallel to the x direction. The toric lens suppresses distortion of the beam shape in the vicinity of the condensing position. If so, a finer image without distortion can be exposed to the pattern forming material 12. In addition, in this embodiment shown in FIGS. 41-44, the area | region with a small beam diameter is further wider. In other words, it can be seen that the depth of focus is larger.

On the other hand, when the magnitude relationship of the distortion of the center portion in the x-direction and the y-direction of the micromirror 58 is reversed to the above, an annular ring whose focal length in the cross section parallel to the x direction is smaller than the focal length in the cross section parallel to the y direction When the microlenses are composed of the body lens, the image without distortion and with the higher definition can be exposed to the pattern forming material 12.

In addition, as shown in FIG. 35A, the opening array 476 disposed near the condensing position of the microlens array 472 has only light passing through the microlens 474 corresponding to the opening 478. It is arranged to. In other words, by forming the opening array 476, the light extinction ratio can be increased by preventing light from entering the adjacent microlenses 474 that do not correspond to the openings 478.

Originally, if the diameter of the aperture of the aperture array provided for the purpose is made smaller, the effect of suppressing the distortion of the beam shape at the condensing position of the microlens can also be obtained. However, in doing so, the amount of light blocked in the opening array becomes larger and the light utilization efficiency is lowered. On the other hand, when the microlens is aspheric in shape, light is not blocked, so the light utilization efficiency is also maintained.

Further, in the pattern formation method of the present invention, the microlenses may be of secondary aspherical shape or may be of higher order (fourth order, sixth order ...) aspherical shape. By using the higher-order aspherical shape, the beam shape can be made more precise.

In addition, in the above-described embodiment, the cross section on the light exit side of the microlens is an aspherical surface (a torus surface), but the microlens is a microlens in which one of the two light passages has a spherical surface and the other has a cylindrical surface. By configuring the arrangement, the same effects as in the above embodiment can be obtained.

In the above-described embodiment, the microlens of the microlens array has an aspherical shape for correcting aberration due to distortion of the micromirror reflecting surface. However, the microlens array is constituted instead of using such aspherical surface shape. The same effect can be obtained even if each microlens has a refractive index distribution for correcting aberration due to distortion of the micromirror reflection surface.

An example of such a micro lens 155a is shown in Figs. 49A and 49B. 49A and 49B show the front shape and the side shape of this micro lens 155a, respectively, and as shown, the external shape of this micro lens 155a is parallel plate shape. In addition, the x and y directions are as described in FIGS. 49A and 49B.

50A and 50B schematically show the condensing state of the laser light B in the cross section parallel to the x direction and the y direction by this microlens 155a. This microlens 155a has a refractive index distribution that gradually increases outward on the optical axis O, and the broken lines shown in the microlenses 155a in FIGS. 50A and 50B change their refractive index from the optical axis O to a predetermined same pitch. It shows one location. As shown, when comparing the cross section parallel to the x direction and the cross section parallel to the y direction, the ratio of the refractive index change of the microlens 155a in the latter cross section is larger, and the focal length is shorter. Even when a microlens array composed of such refractive index distribution lenses is used, the same effects as in the case of using the microlens array 55 can be obtained.

On the other hand, in the microlens having a planar aspheric surface as in the microlens 55a shown in Figs. 39, 40A and 40B, the refractive index distribution as described above is also given, and both the planar shape and the refractive index distribution are provided. The aberration caused by the distortion of the reflecting surface of the micromirror 58 may be corrected.

In addition, although the aberration by the distortion of the reflecting surface of the micromirror 58 which comprises the DMD 36 is corrected in said embodiment, also in the pattern formation method of this invention using spatial light modulation elements other than DMD, When distortion exists in the surface of the drawing part of the spatial light modulator, the present invention can be applied to correct aberrations caused by the distortion, thereby preventing distortion in the beam shape.

Next, the imaging optical system will be further described.

When the laser beam is irradiated to the exposure head by the light irradiation means 144 as shown in Fig. 35A, the cross-sectional area of the light beam reflected by the DMD 36 in the on direction is several times (e.g., by the lens system 454 and 458). For example, 2 times). The magnified laser light is condensed by each micro lens 474 of the micro lens array 472 corresponding to each drawing part of the DMD 36, and the opening array 476 passes through the corresponding opening 478. . The laser light passing through the aperture is imaged on the exposed surface 12 by the lens systems 480 and 482.

In this imaging optical system, the laser light reflected by the DMD 36 is magnified by the magnification lenses 454 and 458 and projected onto the exposed surface 56, thereby enlarging the entire image area. At this time, if the microlens array 472 and the aperture array 476 are not arranged, as shown in Fig. 35B, one drawing size (spot size) of each beam spot BS projected on the exposed surface 56 is exposed to the exposure area 468. ), Which is large depending on the size of the lens, and the MTF (Modulation Transfer Function) characteristic of the sharpness of the exposure area 468 is deteriorated.

On the other hand, when the microlens array 472 and the aperture array 476 are disposed, the laser light reflected by the DMD 36 is moved by each microlens of the microlens array 472 to each drawing part of the DMD 36. In response to this, the light is collected. As a result, as shown in FIG. 35C, even when the exposure area is enlarged, the spot size of each beam spot BS can be reduced to a desired size (for example, 10 μm × 10 μm), thereby reducing the deterioration of the MTF characteristic. It can prevent and high-definition exposure can be performed. On the other hand, the exposure area 468 is inclined because the DMD 36 is inclined so as to eliminate the gap between the graveyards.

In addition, as shown in FIG. 35A, even when the beam due to the aberration of the microlens 474 becomes thick, the beam can be shaped so that the spot size on the exposed surface 12 becomes constant by the aperture array 476. By passing the opening array 476 formed corresponding to each graveyard, crosstalk between adjacent graveyards can be prevented.

In addition, since the angle of the light beam incident on the microlenses of the microlens array 472 in the lens 458 is reduced by using the high-intensity light source described later in the light irradiation means 144, a part of the light beam of the adjacent cemetery is incident. You can prevent it. That is, a high extinction ratio can be realized.

<Other optical system>

In the pattern formation method of this invention, you may use together with the other optical system suitably selected from well-known optical systems, For example, the light quantity distribution correction optical system which consists of one knitted lens, etc. can be mentioned.

The light quantity distribution correction optical system changes the luminous flux width at the emission position so that the ratio of the luminous flux width of the peripheral part to the luminous flux width in the center close to the optical axis is smaller than the incidence side, respectively, and the parallel luminous flux is adjusted by the light irradiation means. When irradiating to DMD, it corrects so that light quantity distribution may become substantially uniform in an irradiated surface. Hereinafter, the light quantity distribution correction optical system will be described with reference to the drawings.

First, as shown in FIG. 51A, the case where the light beam widths (total light beam widths) H0 and H1 of the whole are the same for the incident light beam and the outgoing light beam will be described. In addition, in FIG. 51A, the part shown with the code | symbol 51 and 52 shows the entrance surface and the exit surface of the said light quantity distribution correction optical system virtually.

In the light quantity distribution correcting optical system, the luminous flux widths h0 and h1 of the luminous flux incident on the central portion near the optical axis Z1 and the luminous flux incident on the peripheral portion are the same (h0 = hl). The light quantity distribution correcting optical system expands the luminous flux width h0 for the incident luminous flux at the center, and reduces the luminous flux width h1 for the incident luminous flux at the periphery, for light having the same luminous flux widths h0 and h1 at the incidence side. To act. In other words, h11 <h10 is set for the width h10 of the emitted light flux in the center portion and the width h11 of the emitted light flux in the peripheral portion. In the ratio of luminous flux width, the ratio "h11 / h10" of the luminous flux width of the peripheral part to the luminous flux width of the center part on the exit side is smaller than the ratio (h1 / h0 = 1) on the incidence side ((h11 / h10) <1).

By changing the light beam width in this way, the light flux in the central portion where the light quantity distribution is usually increased can be utilized in the peripheral portion where the light quantity is insufficient, so that the light quantity distribution is almost uniform on the irradiated surface without degrading the utilization efficiency of the light as a whole. The degree of homogenization is such that light quantity nonuniformity is within 30%, preferably within 20% in the effective area.

The effects and effects of the light amount distribution correction optical system are the same also in the case where the entire light beam width is changed on the incidence side and the exit side (Figs. 51B and 51C).

51B shows (H0> H2) when the light beam width H0 on the incident side is "shrinked" to the width H2 and is emitted. Even in such a case, the light quantity distribution correction optical system has light having the same luminous flux width h0 and h1 at the incidence side as compared with the peripheral portion, and the luminous flux width h10 at the center portion is larger than the peripheral portion. Make it smaller. Considering the reduction ratio of the luminous flux, the reduction ratio of the incident light flux in the center portion is made smaller than the peripheral portion, and the reduction ratio of the incident light flux in the peripheral portion is increased in comparison with the center portion. Also in this case, the ratio "H11 / H10" of the luminous flux width of the periphery to the luminous flux width of the center portion is smaller than the ratio (h1 / h0 = 1) on the incident side ((h11 / h10) <1).

FIG. 51C shows a case where H0 &lt; H3 is emitted when the entire luminous flux width H0 on the incident side is "expanded" to a width H3. Even in such a case, the light quantity distribution correction optical system has light having the same luminous flux width h0 and h1 at the incidence side, and the luminous flux width h10 at the center portion at the exit side is larger than the periphery portion. Make it smaller in comparison. Considering the magnification of the luminous flux, the magnification of the incident light flux in the center portion is made larger than the peripheral portion, and the magnification ratio of the incident light flux in the peripheral portion is reduced compared to the center portion. Also in this case, the ratio "h11 / h10" of the luminous flux width of the peripheral part to the luminous flux width of the center portion is smaller than the ratio (h1 / h0 = 1) at the incidence side ((h11 / h10) <1).

Thus, since the said light quantity distribution correction optical system changed the luminous flux width in each emission position, the ratio of the luminous flux width of the periphery to the luminous flux width of the center part near optical axis Z1 was made small compared with the incident side, On the output side, light having the same luminous flux width on the incidence side becomes larger than the peripheral portion, and the luminous flux width on the peripheral portion decreases compared to the central portion. Thereby, the luminous flux of the center part can be utilized at the periphery, and the luminous flux cross section with almost uniform light quantity distribution can be formed without degrading the utilization efficiency of light as the whole optical system.

Next, an example of the specific lens data of one knitted lens used as the said light quantity distribution correction optical system is shown. In this example, the lens data when the light amount distribution is Gaussian distribution in the cross section of the exiting light beam, as in the case where the light irradiation means is a laser array light source. On the other hand, when one semiconductor laser is connected to the incidence end of the single mode optical fiber, the light quantity distribution of the emitted light beam from the optical fiber becomes a Gaussian distribution. The application in such a case is also applicable to the pattern formation method of this invention. It is also applicable to the case where the amount of light in the central portion close to the optical axis is larger than the amount of light in the peripheral portion by reducing the core diameter of the multi-mode optical fiber to make it similar to the configuration of the single mode optical fiber.

Table 1 shows basic lens data.

Primary lens data Si (face number) ri (curvature radius) di (face spacing) Ni (refractive index) 01 02 03 04 Aspheric ∞ ∞ Aspheric 5.000 50.000 7.000 1.52811 1.52811

As can be seen in Table 1, one combination lens consists of two aspherical lenses of rotational symmetry. If the surface on the light incidence side of the first lens disposed on the light incidence side is the first surface, and the surface on the light incidence side is the second surface, the first surface is aspheric. In addition, if the surface on the light incidence side of the second lens disposed on the light exit side is the third surface, and the surface on the light exit side is the fourth surface, the fourth surface is aspheric.

In Table 1, surface number Si represents the surface number of the i-th (i = 1 to 4), curvature radius ri represents the radius of curvature of the i-th surface, and surface spacing di is the optical axis of the i-th surface and the i + 1th surface. Interval of phases. The unit of plane spacing di is in millimeters (mm). The refractive index Ni represents the value of the refractive index with respect to the wavelength of 405 nm of the optical element with i-th surface.

Aspheric data of the first and fourth surfaces are shown in Table 2 below.

The aspherical data was expressed as coefficients in the following formula (A) indicating the aspherical shape.

[2]

In said Formula (A), each coefficient is defined as follows.

Z is the length of the waterline (mm) at the tangent plane (plane perpendicular to the optical axis) of the aspherical vertex at the point on the aspherical surface at the height ρ from the optical axis

ρ: distance from the optical axis (mm)

K: Cone Factor

C: paraxial curvature (1 / r, r: paraxial curvature radius)

ai: aspheric coefficient of the i th order (i = 3 ~ 10)

In the numerical values shown in Table 2, the symbol "E" indicates that the subsequent numerical value is the "power index" with 10 as the base, and the numerical value represented by the exponential function with the base 10 as the base is "E". Indicates multiplication. For example, "1.0E-02" indicates that " ^1.0x10-2 ".

Fig. 53 shows the light amount distribution of the illumination light that can be obtained by one combination lens shown in Tables 1 and 2 above. The horizontal axis represents coordinates from the optical axis, and the vertical axis represents light quantity ratio (%). On the other hand, Fig. 52 shows the light amount distribution (Gaussian distribution) of illumination light when no correction is made for comparison. As can be seen from FIG. 52 and FIG. 53, the light amount distribution correction optical system makes it possible to obtain a substantially uniform light amount distribution as compared with the case where the correction is not performed. Thereby, exposure can be performed without unevenness by uniform laser light, without reducing the utilization efficiency of light.

<< reference exposure >>

Among the micromirrors which can be used as a modification of the above-described embodiments (1) to (3), every other (N-1) column constitutes an adjacent row corresponding to 1 / N rows of micromirror columns or all light spots. The micromirrors not used at the time of actual exposure may be specified among the micromirrors used for the said reference exposure so that reference exposure may be performed using only the micromirror group and uniform exposure may be realized.

The result of the reference exposure by the reference exposure means is sampled, the resolution deviation and the density unevenness are confirmed with respect to the output reference exposure result, and the analysis such as estimating the actual tilt angle is performed. The result analysis of the reference exposure may be an analysis by the naked eye of an operator.

FIG. 21 is an explanatory diagram showing an example of a mode in which a reference exposure is performed using only a micromirror by (N-1) rows using a single exposure head. FIG.

In this example, the double exposure is performed in the present exposure, so N = 2. First, reference exposure is performed using only the micromirrors corresponding to the light spots of odd rows indicated by solid lines in FIG. 21A, and the reference exposure results are sampled. The micromirrors used in the present exposure can be designated by confirming the resolution deviation or the density unevenness or estimating the real tilt angle based on the sample exposure reference exposure result.

For example, micromirrors other than the micromirrors corresponding to the light spots covered with diagonal lines in FIG. 21B are designated as actually used in the present exposure among the micro mirrors constituting the odd light spots. The even-numbered light spots may be separately subjected to the same reference exposure, and the micromirrors used in the present exposure may be designated, or the same pattern as that for the light spots in the odd-numbered rows may be applied.

In this way, by specifying the micromirrors used in the present exposure, a state close to the ideal double exposure can be realized in the present exposure using the micromirrors of both odd and even columns.

FIG. 22 is an explanatory diagram showing an example of a mode in which a reference exposure is performed using a plurality of exposure heads using only a plurality of (N-1) micromirrors. FIG.

In this example, the double exposure is performed in the present exposure, so N = 2. First, as shown by the solid line in FIG. 22, only the micromirror corresponding to the light spot array of the odd rows of the two exposure heads (for example, the exposure heads 30 ₁₂ and 30 ₂₁ ) adjacent to each other in the X-axis direction is used. Exposure is performed and the reference exposure result is sampled. Based on the output results of the reference exposure, two exposure heads are used for the present exposure by confirming the resolution deviation or the density unevenness of an area other than the connection area between the heads formed on the exposed surface or by estimating the actual tilt angle. You can specify a micro mirror.

For example, among the micromirrors in which the micromirrors other than the micromirrors corresponding to the light spots in the area | region 86 displayed by the oblique line and the area | region 88 displayed by hatching comprise the optical spot of odd rows, at the time of this exposure, Is specified as actually used in. The even-numbered light spots may be separately subjected to the same reference exposure, and the micromirrors used in the present exposure may be designated, or the same pattern as the pattern for the pixel columns in the odd-numbered rows may be applied.

In this way, by specifying the micromirrors actually used in the present exposure, in the present exposure using both the odd and even columns of the micromirrors, two exposure heads other than the connection region between the heads formed on the exposed surface are provided. In the region, a state close to an ideal double exposure can be realized.

FIG. 23 is an explanatory diagram showing an example of a form in which a reference exposure is performed using a single exposure head and only a micromirror group constituting adjacent rows corresponding to 1 / N rows of the total number of light dots.

In this example, the double exposure is performed in the present exposure, so N = 2. First, reference exposure is performed using only the micromirrors corresponding to the light spots of the first to 128 (= 256/2) rows indicated by solid lines in Fig. 23A, and the reference exposure results are sampled. The micromirror used at the time of this exposure can be designated based on the reference exposure result output from the said sample output.

For example, micromirrors other than the micromirrors corresponding to the group of light spots covered with oblique lines in FIG. 23B can be designated as actually used in the present exposure, among the micromirrs in the first to 128th rows. The micromirrors of the 129th to 256th rows may be separately subjected to the same reference exposure, and the micromirrors used for this exposure may be designated, and the same pattern as that of the micromirrors of the first to 128th rows may be designated. You may apply.

By designating the micromirrors used in the present exposure in this way, a state close to the ideal double exposure can be realized in the present exposure using the entire micromirror.

FIG. 24 uses a plurality of exposure heads, and for two exposure heads adjacent to each other in the X-axis direction (for example, exposure heads 30 ₁₂ and 30 ₂₁ ), respectively, in 1 / N rows of the total number of light spots. It is explanatory drawing which showed the example of the form which carries out a reference exposure using only the micromirror group which comprises a corresponding adjacent row.

In this example, the double exposure is performed in the present exposure, so N = 2. First, reference exposure is performed using only the micromirrors corresponding to the light points of the first to 128th (= 256/2) rows indicated by solid lines in FIG. 24, and the reference exposure results are sampled. Based on the sample exposure reference exposure result, the present exposure can be realized in a region other than the connection region between the heads formed on the exposed surface by the two exposure heads to minimize resolution variation and density irregularity. The micromirror used at the time of exposure can be specified.

For example, micromirrors other than the micromirrors corresponding to the light spots in the region 90 indicated by hatching lines and the region 92 indicated by hatching in FIG. 24 are the first to 128th micromirrors. It is specified as what is actually used at the time of exposure. The micromirrors of the 129th to 256th rows may be separately subjected to the same reference exposure, and the micromirrors used for the main exposure may be designated, and the same pattern as that of the micromirrors of the first to 128th rows is applied. You may also

By designating the micromirrors used in this exposure in this way, a state close to the ideal double exposure can be realized in an area other than the connection area between the heads formed on the exposed surface by the two exposure heads.

In the above embodiments (1) to (3) and the modification examples, the case where the present exposure is double-exposure has been described. However, the present invention is not limited to this, and any multiple exposure of the double exposure or more may be used. In particular, by setting the exposure time to triple to seven times, high resolution can be ensured and exposure with reduced resolution variation and density unevenness can be realized.

In addition, the exposure apparatus affecting the above-described embodiments and modifications further converts the image data so that the dimension of the predetermined portion of the two-dimensional pattern represented by the image data matches the dimension of the corresponding portion that can be realized by the selected use pixel. It is preferable that a mechanism is provided. By converting the image data in this manner, a fine pattern according to the desired two-dimensional pattern can be formed on the exposure surface.

[Laminated body]

There is no restriction | limiting in particular as long as it is the said pattern forming material which has a photosensitive layer as an object of the said exposure, Although it can select suitably according to the objective, For example, what is performed with respect to the laminated body which forms the said pattern forming material on a base material. desirable.

<Pattern forming material>

There is no restriction | limiting in particular as long as it has a photosensitive layer on a support body as said pattern formation material, According to the objective, it can select suitably.

There is no restriction | limiting in particular as said photosensitive layer, Although it can select suitably from well-known pattern formation materials, For example, it is preferable to contain a binder, a polymeric compound, and a photoinitiator, and to contain other components suitably selected.

Moreover, there is no restriction | limiting in particular as stacking number of the photosensitive layer, According to the objective, it can select suitably, For example, one layer may be sufficient and two or more layers may be sufficient.

"bookbinder"

As said binder, it is preferable that it is swellable with respect to an alkaline aqueous solution, for example, and it is more preferable that it is soluble with respect to an alkaline aqueous solution.

As a binder which shows swelling property or solubility with respect to alkaline aqueous solution, what has an acidic group can be mentioned preferably, for example.

There is no restriction | limiting in particular as said acidic group, According to the objective, it can select suitably, For example, a carboxyl group, a sulfonic acid group, a phosphoric acid group, etc. can be mentioned, Among these, a carboxyl group is preferable.

Examples of the binder having a carboxyl group include a vinyl copolymer having a carboxyl group, a polyurethane resin, a polyamic acid resin, a modified epoxy resin, and the like. Among these, solubility in a coating solvent, solubility in an alkaline developer, The vinyl copolymer which has a carboxyl group is preferable from a viewpoint of synthetic suitability, the ease of adjustment of the physical property of a film | membrane, etc. In addition, from the viewpoint of developability, at least one copolymer of styrene and styrene derivatives is also preferable.

The vinyl copolymer having a carboxyl group can be obtained by copolymerization of at least (1) a vinyl monomer having a carboxyl group and (2) a monomer copolymerizable with these, for example, paragraph 0164 of JP 2005-258431 A. To the compounds described in 0205.

There is no restriction | limiting in particular as content of the said binder in the said photosensitive layer, Although it can select suitably according to the objective, For example, 10-90 mass% is preferable, 20-80 mass% is more preferable, 40-80 mass % Is particularly preferred.

When the said content is less than 10 mass%, adhesiveness with respect to the alkali developability and the board | substrate for printed wiring board formation (for example, copper clad laminated board) falls, and when it exceeds 90 mass%, stability with respect to development time, and cured film ( The tent film) is lowered. In addition, the said content may be content which summed up with the said binder and the polymeric binder used together as needed.

When the binder is a material having a glass potential temperature (Tg), the glass potential temperature is not particularly limited and may be appropriately selected according to the purpose. For example, adhesion and edge fusion of the pattern forming material may be performed. From the viewpoint of at least one of suppression of and improvement of the peelability of the support, 80 ° C or more is preferable, 100 ° C or more is more preferable, and 120 ° C or more is particularly preferable.

If the glass potential temperature is lower than 80 ° C., the adhesion or edge fusion of the pattern forming material may increase or the peelability of the support may deteriorate.

There is no restriction | limiting in particular as an acid value of the said binder, Although it can select suitably according to the objective, For example, 70-250 (mgKOH / g) is preferable, 90-200 (mgKOH / g) is more preferable, 100-180 (mgKOH / g) is particularly preferred.

If the acid value is less than 70 (mgKOH / g), there is a lack of developability or poor resolution, and a permanent pattern such as a wiring pattern can not be obtained with high precision, and if it exceeds 250 (mgKOH / g), the development resistance of the pattern And at least one of the adhesive properties may deteriorate, and a permanent pattern such as a wiring pattern may not be obtained with high definition.

<Polymerizable compound>

There is no restriction | limiting in particular as said polymeric compound, Although it can select suitably according to the objective, For example, the monomer or oligomer which has at least any one of a urethane group and an aryl group can be enumerated suitably. Moreover, it is preferable that these have 2 or more types of polymeric groups.

Examples of the polymerizable group include ethylenically unsaturated bonds (eg, (meth) acryloyl groups, (meth) acrylamide groups, styryl groups, vinyl groups such as vinyl esters and vinyl ethers, allyl ethers and allyl esters, and the like. And allyl groups), polymerizable cyclic ether groups (e.g., epoxy groups, oxetane groups, etc.), and the like. Among these, ethylenically unsaturated bonds are preferable.

-Monomer having a urethane group-

There is no restriction | limiting in particular as long as it has a urethane group as a monomer which has the said urethane group, Although it can select suitably according to the objective, For example, the compound etc. which were described in Paragraph 0210 of 0 JP-A-2005431 0262 can be mentioned. have.

-Monomer having an aryl group-

There is no restriction | limiting in particular as long as it has an aryl group as a monomer which has the said aryl group, Although it can select suitably according to the objective, For example, the compound etc. which were described in Paragraph 0263-0271 of Unexamined-Japanese-Patent No. 2005-258431 are mentioned. have.

-Other polymerizable monomers-

In the pattern formation method of this invention, you may use together the monomer which contains the said urethane group, and polymerizable monomers other than the monomer which has an aryl group in the range which does not deteriorate characteristic as said pattern formation material.

As polymerizable monomers other than the monomer containing the said urethane group, and the monomer containing an aromatic ring, the compound etc. which were described in Paragraph 082 to 0284 of Unexamined-Japanese-Patent No. 2005-258431 are mentioned, for example.

As content of a polymeric compound in the said photosensitive layer, 5-90 mass% is preferable, for example, 15-60 mass% is more preferable, 20-50 mass% is especially preferable.

When the content is 5% by mass, the strength of the tent film will be lowered. When the content exceeds 90% by mass, the edge fusion at the time of storage (soaking from the roll end and failure) will deteriorate.

Moreover, as content of the polyfunctional monomer which has 2 or more of said polymerizable groups in a polymeric compound, 5-100 mass% is preferable, 20-100 mass% is more preferable, 40-100 mass% is especially preferable.

<Photoinitiator>

There is no restriction | limiting in particular as said photoinitiator as long as it has the ability to start superposition | polymerization of the said polymeric compound, Although it can select suitably from well-known photoinitiators, For example, Paragraph 0286-0310 of Unexamined-Japanese-Patent No. 2005-258431 The compound described, etc. can be mentioned.

<Other ingredients>

As said other components, a sensitizer, a thermal polymerization inhibitor, a plasticizer, a coloring agent, a coloring agent, etc. can be mentioned, for example, Adhesion promoter to a gas surface, and other preparations (for example, a pigment, electroconductive particle) , A filler, an antifoaming agent, a flame retardant, a leveling agent, a peeling accelerator, an antioxidant, a fragrance, a thermal crosslinking agent, a surface tension modifier, a chain transfer agent, and the like). As these compounds, for example, the compounds described in paragraphs 0312 to 0336 of JP 2005-258431 A and the like can be enumerated, and by appropriately containing, the stability, photographic properties, and degree of output of the desired pattern forming material (degree of print-out of image after exposure) and film properties.

There is no restriction | limiting in particular as thickness of the said photosensitive layer, Although it can select suitably according to the objective, For example, 1-100 micrometers is preferable, 2-50 micrometers is more preferable, 4-30 micrometers is especially preferable.

[Production of Pattern Forming Material]

The pattern forming material can be produced by, for example, the method described in paragraphs 0338 to 0375 of JP-A-2005-258431.

Example

Hereinafter, although an Example demonstrates this invention further more concretely, this invention is not limited to these.

(Example 1)

-Production of pattern formation material-

The photosensitive resin composition solution which consists of the following composition was apply | coated to the 20-micrometer-thick polyethylene terephthalate film | membrane as the said support body, and the 15-micrometer-thick photosensitive layer was formed and the said pattern forming material was produced.

[Composition of Photosensitive Resin Composition Solution]

Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymer composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, acid value 150) 15 masses part

7.0 parts by mass of the polymerizable monomer represented by the following structural formula (73)

7.0 parts by mass of a 1/2 molar ratio adduct of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate

N-methylacridone 0.11 parts by mass

2.17 parts by mass of 2,2-bis (o-chlorophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole

2-mercaptobenzimidazole 0.23 parts by mass

Malachite Green Oxalate 0.02 parts by mass

0.26 parts by mass of leuco crystal violet

40 parts by mass of methyl ethyl ketone

20 parts by mass of 1-methoxy-2-propanol

[Tue 1]

Structural Formula (1)

However, in structural formula (1), m + n represents 10.

A 20-micrometer-thick polyethylene film was laminated on the photosensitive layer of the pattern forming material as the protective film. Next, the photosensitive layer of the pattern forming material was applied to the copper clad laminate, while the surface of the pattern forming material was peeled off on the surface of the copper clad laminate (no through hole, copper thickness 12 μm), which was polished, washed with water, and dried. The laminate was laminated using a laminator (MODEL8B-720-PH, manufactured by Taisei Laminater Co., Ltd.), and the copper clad laminate, the photosensitive layer, and the polyethylene terephthalate film (support) were laminated in this order. It was.

The crimping conditions were crimping roll temperature 105 degreeC, crimping roll pressure 0.3MPa, and lamination speed of 1 m / min.

In the prepared laminate, (a) resolution, (b) corner roughness and (c) etching property were evaluated for the photosensitive layer of the pattern forming material by the following method. The results are shown in Table 3.

<(a) resolution>

(1) Measuring method of shortest developing time

The support was peeled off from the laminate, sprayed with a 1 mass% sodium carbonate aqueous solution at 30 ° C. at a pressure of 0.15 MPa on the entire surface of the photosensitive layer on the copper clad laminate, and the photosensitive layer on the copper clad laminate was The time required for dissolution removal was measured and this was called the shortest development time.

As a result, the shortest developing time was 10 seconds.

(2) measurement of sensitivity

In the prepared laminate, the amount of light energy is different from 0.1mJ / cm 2 to 100mJ / cm 2 at intervals of 2 ^1/2 times using the pattern forming apparatus described below with respect to the photosensitive layer of the pattern forming material. It irradiated with light and double-exposed and hardened the some area | region of the said photosensitive layer. After standing at room temperature for 10 minutes, the support was placed from the laminate on the entire photosensitive layer on the copper clad laminate, and 30% of a 1% by mass aqueous sodium carbonate solution was sprayed at 0.15 MPa, which was twice the shortest development time pursued in the above (1). It sprayed in the time of, and melt | dissolved and removed the unhardened area | region, and measured the thickness of the remaining hardened area | region. Next, the relationship between the light irradiation amount and the thickness of the cured layer was plotted to obtain a sensitivity curve. From the said sensitivity curve, the amount of light energy when the thickness of a hardened area | region became 15 micrometers similarly to the photosensitive layer before exposure was made into the amount of light energy required in order to harden a photosensitive layer.

As a result, the amount of light energy required to cure the photosensitive layer was 3 mJ / cm 2.

<< pattern forming apparatus >>

8 to 9 and 25 to 29 as the light irradiation means, and a micromirror array in which 1024 micro mirrors 58 are arranged in the scanning direction shown in the schematic diagram in FIG. Of the 768 sets arranged in the scanning direction, the exposure head 30 having the DMD 36 controlled to drive only 1024 x 256 rows and the optical system shown in FIGS. 5A and 5B to form light on the pattern forming material is shown. The equipped pattern forming apparatus 10 was used.

As the set angle of inclination of each exposure head 30, that is, each DMD 36, using a micromirror 58 of 1024 rows x 256 rows which can be used, an angle slightly larger than the angle θ _ideal of double exposure is used. . This angle θ _ideal is the number N of exposures in N, the number s in the column direction of the usable micromirrors 58, the spacing p in the column direction of the usable micromirrors 58, and the exposure head 30 in an inclined state. Regarding the pitch δ of the scan line formed by the micromirror, the following equation 1,

spsinθ _ideal ≥Nδ (Equation 1)

Is given by In the present embodiment, the DMD 36 is formed by arranging a plurality of micromirrors 58 having the same vertical and horizontal arrangement intervals as described above in a rectangular grid.

pcosθ _ideal = δ (Equation 2)

Equation 1 is

stanθ _ideal = N (Equation 3)

Since s = 256 and N = 2, the angle θ _ideal is about 0.45 degrees. Therefore, 0.50 degree was used as setting inclination-angle (theta), for example.

First, the state of the exposure pattern of the to-be-exposed surface was investigated in order to correct the resolution deviation and exposure unevenness in double exposure. The results are shown in FIG. 18, usable micromirrors 58 of the DMD 36 included in the exposure heads 30 ₁₂ and 30 ₂₁ projected on the exposed surface of the photosensitive layer 12 with the stage 14 stopped. The pattern of the light spot group of is shown. In addition, as shown in the upper portion at the lower portion, the state of the exposure pattern formed on the exposed surface when the stage 14 is moved by moving the stage 14 while the pattern of the light spot group is exposed is exposed to the exposure area 32 ₁₂ . It was shown about (32 ₂₁ ). On the other hand, although FIG. 18 shows the exposure pattern by the pixel column group A and the exposure pattern by the pixel column group B, the exposure pattern of the micromirror 58 which can be used for convenience of description is divided into the exposure patterns on the actual to-be-exposed surface. The pattern encompasses these two exposure patterns.

As shown in Fig. 18, the relative positions between the exposure heads 30 ₁₂ and 30 ₂₁ are exposed to both the exposure pattern by the pixel column group A and the exposure pattern by the pixel column group B as a result of the difference in the ideal state. It is evident that a region that is overexposed than an ideal double exposure state occurs in an overlapping exposure region on the coordinate axis orthogonal to the scanning direction of the exposure heads 32 ₁₂ and 32 ₂₁ .

A set of slits 28 and a photodetector are used as the light spot position detecting means, and the positions of the light spots P (1, 1) and P (256, 1) in the exposure area 32 ₁₂ with respect to the exposure head 30 ₁₂ . For the exposure head 30 ₂₁ , the positions of the light points P (1, 1024) and P (256, 1024) in the exposure area 32 ₂₁ are detected and the angle between the inclination angle of a straight line connecting them and the scanning direction of the exposure head are formed. Was measured.

Equation 4 below using a real tilt angle θ '

ttanθ '= N (Equation 4)

The natural number T closest to the value t satisfying the relationship of was derived for each of the exposure heads 30 ₁₂ and 30 ₂₁ . T = 254 was obtained for the exposure head 30 ₁₂ and T = 255 was derived for the exposure head 30 ₂₁ , respectively. As a result, in FIG. 19, the micromirrors constituting the portions 78 and 80 covered with diagonal lines were identified as micromirrors not used in the present exposure.

Subsequently, the micromirrors corresponding to light spots other than the light spots constituting the diagonal areas 78 and 80 in FIG. 19 are similarly covered with the diagonal line 82 and hatching in FIG. 19. The micromirror corresponding to the light spot which comprises the area | region 84 was specified, and was added as a micromirror not used at the time of this exposure.

A signal to be set at an angle in the always off state is sent to the micromirror specified as not being used during these exposures, so that the micromirrors are controlled so as not to substantially participate in the exposure.

As a result, the exposed areas (32 ₁₂₎ and (32 _21), wherein the exposure excessive with respect to the exposure of the ideal 2 in each of regions other than the connected region between the overlapping exposed areas of the head on the Pinot light surface formed of a plurality of the exposure heads The total area of the area | region to become and the area | region to become underexposure can be minimized.

(3) measurement of resolution

The laminated body was produced by the same method and conditions as the evaluation method of the shortest development time of said (1), and it was left to stand at room temperature (23 degreeC, 55% RH) for 10 minutes. Using the said pattern forming apparatus on the polyethylene terephthalate film | membrane (support body) of the obtained laminated body, exposure of each line | wire width was carried out every 1 micrometer to line | wire width of 10 micrometers-50 micrometers by line / space = 1/1. At this time, an exposure amount is an amount of light energy required in order to harden the photosensitive layer of the said pattern formation material measured by said (2). After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled from the laminate. On the front of the photosensitive layer on the copper clad laminate, a 1 mass% sodium carbonate aqueous solution at 30 ° C. was sprayed at a spray pressure of 0.15 MPa for twice the time of the shortest development time pursued in (1) above to dissolve and remove the uncured region. The surface of the copper-clad laminate with a cured resin pattern obtained in this way was observed with an optical microscope, and the minimum line width that was free from line shrinkage, entanglement, etc. of the cured resin pattern, and in which space formation was possible was measured, which was defined as the resolution. The smaller the numerical value, the better.

<(b) Corner Roughness>

Using the said pattern forming apparatus, the said laminated body is irradiated so that the horizontal line pattern of the direction orthogonal to the scanning direction may be formed, and it double-exposed, and the area | region of a part of the said photosensitive layer is measured in the said resolution ( A pattern was formed in the same manner as in 3). Of the obtained patterns, a line having a line width of 30 µm and any five places were observed using a laser microscope (VK-9500, KEYENCE Co., Ltd .; objective lens 50 times), and the most swollen point among the corner positions in the field of view ( The difference between the mountainous part) and the narrowest point (the bottom of the grain) was calculated as an absolute value, and the average of the five observed points was calculated and this was used as the edge roughness. The smaller the roughness is, the smaller the value is, in order to exhibit good performance. The results are shown in Table 3.

<(c) Etchability>

Using the said laminated body which has the pattern formed in the measurement of the said resolution, iron chloride etchant (ferric chloride containing etching solution, 40 degrees bome, liquid temperature 40 degreeC) was applied to the surface of the copper clad laminated board exposed in the said laminated body. It sprayed for 36 second at 0.25 Mpa, and performed the etching process by melt | dissolving and removing the copper layer of the exposed area | region not covered with the hardened layer. Next, the said formed pattern was removed by spraying 2 mass% sodium hydroxide aqueous solution, and the printed wiring board which has a wiring pattern of a copper layer as the said permanent pattern on the surface was produced. The wiring pattern on the said printed wiring board was observed with the optical microscope, and the minimum line width of the said wiring pattern was measured. The smaller this minimum line width means that a high-definition wiring pattern can be obtained and the etching property is excellent. The results are shown in Table 3.

(Example 2)

Example 1 and Example 1 except having replaced the 1/2 molar ratio adduct of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate of the photosensitive resin composition solution with the compound represented by following structural formula (2) In the same manner, a pattern forming material and a laminate were prepared.

In the laminate thus prepared, (a) resolution, (b) corner roughness, and (c) etching property were evaluated in the same manner as in Example 1 for the photosensitive layer of the pattern forming material. The results are shown in Table 3.

On the other hand, the shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm 2.

구조식(2)

Structural Formula (2)

(Example 3)

The same procedure as in Example 1 was repeated except that a 1/2 molar ratio adduct of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate in the photosensitive resin composition solution was replaced with the compound represented by the following structural formula (3). To form a pattern forming material and a laminate.

In the prepared laminate, (a) resolution, (b) corner roughness, and (c) etching property were evaluated for the photosensitive layer of the pattern forming material. The results are shown in Table 3.

On the other hand, the shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm 2.

구조식(3)

Structural Formula (3)

(Example 4)

In Example 1, methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymer composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, Acid value 150) was changed to methyl methacrylate / styrene / benzyl methacrylate / methacrylic acid copolymer (copolymer composition (mass ratio): 8/30/37/25, mass average molecular weight: 60,000, acid value 163) In the same manner as in Example 1, a pattern forming material and a laminate were prepared.

In the prepared laminate, (a) resolution, (b) corner roughness, and (c) etching property were evaluated for the photosensitive layer of the pattern forming material. The results are shown in Table 3.

On the other hand, the shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm 2.

(Comparative Example 1)

In the pattern forming apparatus of Example 1, the set inclination angle θ is calculated as N = 1 based on Equation 3 above, and the natural number T closest to the value t satisfying the relationship of ttan θ '= 1 based on Equation 4 above. Was evaluated and (a) resolution, (b) edge roughness, and (c) etching property were evaluated like Example 1 except having carried out N-exposure (N = 1). The results are shown in Table 3.

On the other hand, the shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm 2.

An example of the exposure state of the to-be-exposed surface in the comparative example 1 is shown in FIG. In FIG. 54, a usable micromirror of the DMD 36 included in one exposure head (for example, 30 ₁₂ ) projected on the exposed surface of the pattern forming material 12 with the stage 14 stopped. 58 shows the pattern of the light spot group. In addition, when the continuous exposure is performed by moving the stage 14 in the state where the light spot group pattern is shown at the lower end, the exposure pattern formed on the exposed surface is shown in one exposure area (eg, 32 ₁₂ ).

As an example of the pattern distortion appearing on the exposure surface as a result of the ideal state and difference of the one exposure head (for example, 30 ₁₂ ), the inclination angle of each pixel column projected on the exposure surface becomes uniform and disappears. Angular distortion ”. The angle distortion shown in the example of FIG. 54 is a distortion in which the inclination angle with respect to the scanning direction is larger in the left column of the diagram, and smaller in the right column of the diagram. As a result of this angular distortion, an area which becomes overexposed on the to-be-exposed surface shown on the left side of a figure arises, and the area which becomes underexposure on the to-be-exposed surface shown on the right side of a figure arises.

(a) Resolution (μm) (b) corner roughness (µm) (c) Etchability (μm) Example 1 15 0.9 23 Example 2 15 0.9 23 Example 3 15 0.9 23 Example 4 15 0.9 23 Comparative Example 1 15 2.0 25

In the results of Table 3, the wiring patterns of Examples 1 to 4, which were compared with the wiring patterns of Comparative Example 1 and corrected the resolution deviation and the exposure unevenness in the double exposure, had high definition, had small edge roughness, and had an etching property. I found it excellent.

Evenly, the influence of the exposure dose variation due to the pattern distortion caused by the difference in the installation position or the installation angle of the exposure head, the various aberrations of the optical system between the drawing portion and the exposure surface of the pattern forming material, the distortion of the drawing portion itself, etc. And by reducing the resolution variation and the density unevenness of the pattern formed on the exposed surface of the pattern forming material, the pattern can be formed with high definition and efficiently. It can use suitably for formation, etc., and can use especially for formation of a high definition wiring pattern.

Claims (38)

In the pattern formation material which has a photosensitive layer on a support body, after laminating | stacking the said photosensitive layer on a to-be-processed body, with respect to the said photosensitive layer, A light irradiating means and n number of light emitting units receiving light from the light irradiating means (where n is a natural number of two or more), and light modulating means capable of controlling the seeding portions in accordance with pattern information. As one exposure head, the exposure head arrange | positioned so that the column direction of the said drawing part may make predetermined predetermined inclination-angle (theta) with respect to the scanning direction of the said exposure head is used, A step of designating the drawing portion to be used for exposure among N (where N is a natural number of two or more) among the drawing portions usable by use drawing portion specifying means for the exposure head; Controlling the drawing section so that only the drawing section designated as the use drawing section designation means by the drawing section control means with respect to the exposure head is involved in exposure; And And exposing the exposure head to be moved relative to the photosensitive layer in a scanning direction. The method of claim 1, Said exposure is performed by a some exposure head, The said drawing part designation means is a drawing part which participates in exposure of the connection area | region between the head which is an overlapping exposure area on the to-be-exposed surface formed by the said some exposure head, The said A pattern forming method, characterized in that the drawing portion used for realizing N-exposure in the connection region between the heads is specified. The method of claim 2, The said exposure is performed by a some exposure head, and among the drawing parts which the use drawing part designation means participates in exposure other than the connection area between heads which are overlapping exposure areas on the to-be-exposed surface formed by the said some exposure head, A pattern forming method, characterized in that the drawing portion used for realizing N-exposure in regions other than the connection region between the heads is specified. The method according to any one of claims 1 to 3, The set inclination angle θ is a row of the drawing parts over the direction orthogonal to the scanning direction of the exposure head in a state in which the exposure number N of N, the number of columns in the drawing part s, the interval p in the column direction of the drawing part, and the exposure head are inclined. And a relationship of θ≥ θ _ideal with respect to θ _ideal satisfying the following equation, spsinθ _ideal ≥Nδ with respect to the pitch δ in the direction. The method according to any one of claims 1 to 4, N in said N exposure is a natural number of 3 or more, The pattern formation method characterized by the above-mentioned. The method according to any one of claims 1 to 5, The use cemetery designation means Light point position detection means for detecting a light point position on a to-be-exposed surface, which is generated by a tomb portion and constitutes an exposure area on the to-be-exposed surface, And a drawing part selecting means for selecting a drawing part used for realizing exposure among N based on a detection result by said light spot position detecting means. The method according to any one of claims 1 to 6, The use drawing part specifying means designates the use drawing part used in order to realize the N-exposure on a line basis. The method according to claim 6 or 7, The light spot position detecting means specifies the actual tilt angle θ 'formed between the column direction of the light spot on the exposed surface and the scanning direction of the exposure head in a state where the exposure head is inclined based on the detected two or more light spot positions, The seedling part selecting means selects the used seedling part so as to absorb the error between the real tilt angle θ 'and the set tilt angle θ. The method of claim 8, The real inclination angle θ 'is any one of an average value, an intermediate value, a maximum value and a minimum value of a plurality of real inclination angles formed by the column direction of the light spot on the exposed surface and the scanning direction of the exposure head in a state where the exposure head is inclined. Pattern formation method to use. The method according to claim 8 or 9, The drawing part selecting means derives a natural number T close to t satisfying the relation of ttan θ '= N (where N represents the exposure number N of N) based on the actual inclination angle θ', and m rows (where, m represents a natural number of two or more.) The pattern forming method of selecting the drawing part of the 1st row | line | column T line as a using drawing part in the arranged drawing part. The method according to claim 8 or 9, The drawing part selecting means derives a natural number T close to t satisfying the relation of ttan θ '= N (where N represents the exposure number N of N) based on the actual inclination angle θ', and m rows (where, m represents a natural number of 2 or more) In the arranged drawing part, the said drawing part of line (T + 1)-m line is identified as an unused drawing part, and selecting the drawing part except the said unused drawing part as a using drawing part The pattern formation method characterized by the above-mentioned. The method according to any one of claims 6 to 11, In the region including at least an overlapping exposure region on the exposed surface formed by a plurality of scribe columns; (1) means for selecting the use drawing part so that the total area of the area overexposed and the area underexposed to the ideal N-exposure is minimized; (2) means for selecting the use drawing part so that the drawing unit number of the area which becomes overexposure and the number of drawing unit areas which become underexposure with respect to ideal N-exposure are the same, (3) a means for selecting the use drawing portion so that the area of the area overexposed to the ideal N-exposure is minimized and the area underexposed is not generated, and (4) Means for selecting the use drawing portion so that the area of the area underexposed to the ideal N-exposure becomes minimal and the area that becomes overexposed does not occur. Pattern forming method, characterized in that any one of. The method according to any one of claims 6 to 12, Said drawing part selection means is a connection area between the heads which are overlapping exposure areas on the to-be-exposed surface formed by the some exposure head, (1) An unused drawing part is specified in the drawing part which participates in exposure of the connection area | region between the said heads so that the total area of the area overexposed and the area underexposed with respect to ideal N exposure may be minimum, and the said Means for selecting the seedling portion except the use seedling portion as the use seedling portion, (2) Identifying the unused drawing part in the drawing part involved in the exposure of the connection area between the heads so that the number of drawing units in the overexposed area and the underexposed area for the ideal N-exposure become equal. Means for selecting the drawing part except the unused drawing part as the using drawing part, (3) Identify the unused drawing part in the drawing part involved in the exposure of the connection area between the heads so that the area of the area overexposed to the ideal N-exposure is minimized and the area underexposed is not generated. Means for selecting the drawing part except the unused drawing part as the using drawing part, and (4) Identifying the unused drawing part in the drawing part involved in the exposure of the connection area between the heads so that the area of the underexposure area becomes the minimum and the exposure excessive area does not occur with respect to the ideal N-exposure. And means for selecting the drawing part except the unused drawing part as a using drawing part. The method according to any one of claims 5 to 13, In order to designate a use drawing part in the said use drawing part designation means, a reference exposure is made using only the said drawing part which comprises the drawing part column for every (N-1) columns with respect to N of exposure among N among the available drawing parts. The pattern formation method characterized by the above-mentioned. The method according to any one of claims 5 to 13, In the above-mentioned drawing part which can be used to designate a using drawing part in the use drawing part designation means, performing reference exposure using only the said drawing part which comprises the drawing part row every 1 / N rows with respect to N of N exposure. The pattern formation method characterized by the above-mentioned. The method according to any one of claims 1 to 15, And the use drawing part designating means has a slit and a photodetector as light spot position detecting means and a computing device connected with the photodetector as a drawing part selecting means. The method according to any one of claims 1 to 16, Exposure pattern N is 3 or more and 7 or less natural numbers, The pattern formation method characterized by the above-mentioned. The method according to any one of claims 1 to 17, The light modulating means further includes a pattern signal generating means for generating a control signal based on the pattern information to be formed, and modulates the light irradiated from the light irradiating means according to the control signal generated by the pattern signal generating means. Pattern formation method characterized by the above-mentioned. The method according to any one of claims 1 to 18, And the light modulating means is a spatial light modulating element. The method of claim 19, And said spatial light modulation element is a digital micro mirror device (DMD). The method according to any one of claims 1 to 20, And the drawing part is a micromirror. The method according to any one of claims 1 to 21, The said light irradiation means can synthesize | combine and irradiate 2 or more lights, The pattern formation method characterized by the above-mentioned. The method according to any one of claims 1 to 22, And said light irradiation means has a plurality of lasers, a multimode optical fiber, and a collective optical system for condensing laser beams irradiated from said plurality of lasers and coupling them to said multimode optical fiber. The method according to any one of claims 1 to 23, And the exposure is performed through a microlens array in which microlenses having aspherical surfaces capable of correcting aberration due to distortion of the exit surface in the drawing section are arranged. The method of claim 24, The aspherical surface is a pattern forming method, characterized in that the toric surface. The method of claim 24 or 25, And said exposure is performed by passing through an array of apertures in which openings arranged such that only light passing through said microlenses are incident near a condensing position of said microlenses are arranged. The method according to any one of claims 1 to 26, The said photosensitive layer contains a binder, a polymeric compound, and a photoinitiator, The pattern formation method characterized by the above-mentioned. The method of claim 27, The binder has an acidic group, characterized in that the pattern forming method. The method of claim 27 or 28, The binder is a pattern forming method, characterized in that the vinyl copolymer. The method according to any one of claims 27 to 29, The acid value of the binder is a pattern forming method, characterized in that 70 ~ 250mgKOH / g. The method according to any one of claims 27 to 30, The said polymeric compound contains the monomer which has at least one of a urethane group and an aryl group, The pattern formation method characterized by the above-mentioned. The method according to any one of claims 27 to 31, And the photopolymerization initiator contains at least one selected from halogenated hydrocarbon derivatives, hexaarylbiimidazoles, oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts and metalocenes. The method according to any one of claims 1 to 32, The said photosensitive layer contains 10-90 mass% of binders, and contains 5-90 mass% of polymeric compounds, The pattern formation method characterized by the above-mentioned. The method according to any one of claims 1 to 33, The thickness of the photosensitive layer is a pattern forming method, characterized in that 1 ~ 100㎛. The method according to any one of claims 1 to 34, The support includes a synthetic resin and is transparent. The method according to any one of claims 1 to 35, The support is pattern forming method characterized in that the elongate shape. The method according to any one of claims 1 to 36, The pattern forming material is elongated and wound in a roll. The method according to any one of claims 1 to 37, The pattern formation method characterized by forming a protective film on the photosensitive layer in the said pattern formation material.

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