KR20070035702A - Method for fabricating of metal wiring, flat display device fabricated using the same and method for fabricating of flat display device using the same - Google Patents

Abstract

A method for manufacturing a metal wiring of the present invention, the method comprising the steps of: providing a substrate defined by a first region and a second region; Forming a self-assembled monolayer over the entire surface of the substrate; Irradiating UV light on the self-assembled monolayer formed in the second region; Applying a dispersion in which metal nanopowder is dispersed over the entire surface of the substrate; And sintering the dispersion liquid formed on the substrate. In addition, by providing a flat panel display device and a method of manufacturing the same, it is possible to improve the production efficiency.

Metal wiring, nano powder, self-assembled monolayer, hydrophilic, UV, flat panel display

Description

Method for fabricating of metal wiring, flat display device fabricated using the same and method for fabricating of flat display device using the same

1A to 1F are process diagrams illustrating a method of manufacturing a metal wiring according to a first embodiment of the present invention.

2A and 2B illustrate one unit pixel of the flat panel display according to the second exemplary embodiment of the present invention.

3A to 3D are flowcharts illustrating a method of manufacturing a flat panel display device according to a third embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

100, 300: substrate 110, 301: self-assembled monolayer

120, 320a: dispersion liquid 120 ': metal wiring

302: gate electrode 310: gate wiring

320: data wiring 330: pixel electrode

The present invention relates to a method for manufacturing metal wiring, and more particularly, to provide a method of manufacturing metal wiring using a self-assembled monolayer and a method of manufacturing a flat panel display device using the same.

To date, in order to form a metal wiring, a metal film formed by depositing metal was patterned and formed. At this time, the pattern of the metal film is formed by photolithography using a polymer thin film as a photoresist.

In such a method of forming metal wirings by photolithography, a photosensitive film is formed on a substrate on which a metal film is formed. Subsequently, a mask in which a desired shape of a metal wiring is designed is disposed on the photosensitive film, and then UV light is irradiated onto the mask. UV light passing through the mask is irradiated onto the photosensitive film positioned below the mask. Thereafter, the photoresist exposed in the form of a metal wiring to be formed by the user is formed on the metal film by removing the region irradiated with UV light or the region not irradiated with UV light through the developer. Thereafter, the exposed metal film was etched with respect to the photoresist, and the photoresist was peeled off, thereby forming a metal wiring.

At this time, in order to form a metal wiring by such photolithography, not only the exposure and the development process but also the process of peeling the said photoresist had to go through various processes.

In addition to a flat panel display device, many electronic devices require a plurality of metal wires. In this case, the plurality of metal wires may be made of different kinds of metals, so that various types of etchant may be used to etch the metal film formed of the metals. As a result, various types of etching liquids are required, so that not only the manufacturing cost is increased but also various processes are required.

In addition, defects in the apparatus may be caused by particles generated in the developing process of the photosensitive film or the process of etching the metal film.

In addition, such photolithography requires expensive deposition equipment for the deposition of metal films. At this time, according to the size of the substrate, it is necessary to design the deposition equipment, the manufacturing cost may increase.

The present invention is to provide a method for producing a metal wiring by forming a metal wiring using a self-assembly monolayer, to reduce contamination by particles, and to form a metal wiring through a simple process. There is this.

In addition, another object of the present invention is to provide a flat panel display device using the method for forming the metal wiring and a method for manufacturing the same.

In order to achieve the above technical problem, an aspect of the present invention provides a method of manufacturing a metal wiring. The manufacturing method includes providing a substrate defined by a first region and a second region; Forming a self-assembled monolayer over the entire surface of the substrate; Irradiating UV light on the self-assembled monolayer formed in the second region; Applying a dispersion in which metal nanopowder is dispersed over the entire surface of the substrate; And sintering the dispersion liquid formed on the substrate.

In order to achieve the above technical problem, another aspect of the present invention provides a flat panel display device. The flat panel display may include a substrate; Self-assembled monolayers defined by hydrophilic and hydrophobic regions formed on the substrate; A gate electrode and a gate wiring formed on the hydrophilic region of the self-assembled monolayer; A gate insulating film formed on the gate wiring and the gate electrode; An active layer formed on the gate insulating layer corresponding to the gate electrode; A source / drain electrode formed spaced apart from a predetermined portion of the active layer; A passivation layer formed on the source / drain electrode and having a contact hole exposing a portion of the drain electrode; And a pixel electrode electrically connected to the drain electrode through the contact hole on the passivation layer.

Another aspect of the present invention to achieve the above technical problem provides a method of manufacturing a flat panel display device. The manufacturing method includes providing a substrate; Forming a self-assembled monolayer on the substrate; Irradiating UV light to a predetermined region of the self-assembled monolayer; Applying a dispersion in which a metal nanopowder is dispersed on the self-assembled monolayer; Sintering the applied dispersion to form a gate wiring and a gate electrode made of the metal nanopowder; Forming a gate insulating film on the gate wiring and the gate electrode; Forming an active layer and a source / drain electrode on the gate insulating layer corresponding to the gate electrode; Forming a passivation layer on the front surface of the substrate including the source / drain electrodes and having a contact hole exposing a portion of the drain electrode; And forming a pixel electrode on the passivation layer and electrically connected to the drain electrode through the contact hole.

Hereinafter, a detailed description will be given of a manufacturing method of a metal wiring according to the present invention and a process diagram for a manufacturing process of a flat display device and a drawing of a flat panel display device. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

1A to 1F are process diagrams illustrating a method of manufacturing a metal wiring according to an embodiment of the present invention.

Referring to FIG. 1A, a substrate 100 on which metal wiring is to be formed is provided. A self-assembly monolayer 110 is formed over the entire surface of the substrate 100. The self-assembled monolayer 110 may be made of a silane derivative. In this case, the self-assembled monolayer 110 is preferably made of a silane derivative combined with a functional group that can be easily separated by reaction with UV, more preferably, may be formed of phenyltrichlorosilane (phenyltrichlorosilane). . In this case, the surface of the self-assembled monolayer 110 is hydrophobic.

Here, the method of forming the self-assembled monolayer 110 may be formed by any one of an inkjet printing method, spin coating, dip coating and doctor blade method.

Subsequently, the mask 200 including the transmissive part and the non-transmissive part is disposed on the self-assembled monolayer 110 and irradiated with UV light.

Subsequently, referring to FIG. 1B, the phenyltrichlorosilane constituting the self-assembled monolayer 110 serves to promote the reaction between the phenyltrichlorosilane and oxygen in the atmosphere by the UV light. The phenyl group of rosilane is substituted by a hydrophilic hydroxy group.

Thus, referring to FIG. 1C, the self-assembled monolayer 110 ′ has a predetermined region, that is, a region 110a to which UV light is irradiated. That is, the surface of the substrate 100 is divided into a hydrophilic region (A) and a hydrophobic region (B) by the surface modification by UV irradiation.

Thereafter, referring to FIG. 1D, the dispersion liquid 120 in which the metal nanopowder is dispersed is coated on the self-assembled monolayer 110 'by performing a conventional method. For example, the conventional method may be one method selected from the group consisting of an inkjet printing method, a spin coating, a dip coating, and a doctor blade method, but embodiments of the present invention are not limited thereto.

In this case, the dispersion 120 may include a solvent, and may further include a polymer and a dispersant. Here, the solvent disperses the metal nanopowder 110, and serves to uniformly apply to the substrate 100. In addition, the polymer serves to fix the metal nanopowder on the substrate 100. The dispersant stably disperses the metal nanopowder, thereby preventing the metal nanopowder from agglomerating.

1E, when the solvent constituting the dispersion is hydrophilic, the hydrophilic region A of the self-assembled monolayer 110 ′ is arranged. In this case, unlike the drawing, when the solvent constituting the dispersion 120 is hydrophobic, the dispersion 120 may be arranged in the hydrophobic region B of the self-assembled monolayer 110 '.

Subsequently, referring to FIG. 1F, a metal wire 120 ′ is formed on the substrate through a process of sintering through heat treatment.

Thereby, the metal wiring can be formed by an easy coating method without performing the deposition process for forming the metal wiring, and the process can be further simplified, which is more advantageous for mass production. In addition, since expensive deposition equipment is not required, production costs can be reduced.

2A and 2B illustrate a unit pixel of a flat panel display according to a second exemplary embodiment of the present invention. FIG. 2A is a plan view of the flat panel display, and FIG. 2B is a plan view of FIG. It is a cross section taken into '.

Referring to FIG. 2A, a flat panel display includes a plurality of gate wires 310 and data wires 320 vertically and horizontally disposed on a substrate, and the gate wires 310 and the data wires 320 are disposed on the substrate. The pixel electrode 330 is positioned in a matrix in each unit pixel region defined by crossing. Here, the thin film transistor Tr positioned at each intersection point of the gate line 310 and the data line 320 is provided. In this case, the thin film transistor Tr may be a switching thin film transistor that is switched by a signal of the gate line 310 to transfer a signal of the data line 320 to the pixel electrode 330. In addition, unlike the drawing, a switching thin film transistor and a driving thin film transistor may be provided at an intersection point of the gate line 310 and the data line 320. As a result, the switching thin film transistor is switched by a signal of the gate wiring to transfer the data signal to the driving thin film transistor to drive the driving thin film transistor, and the driving thin film transistor is a voltage corresponding to a gate-source voltage. Is transferred to the pixel electrode to implement an image.

Here, the gate wiring 310 and the gate electrode of the thin film transistor may be formed by arranging metal nanopowders using a self-assembled monolayer modified with hydrophilicity. In this case, the conductivity may be further improved by forming the gate electrode 310 and the gate electrode of the thin film transistor with a metal nano powder having low resistance.

A flat panel display of the present invention will be described in more detail with reference to FIG. 2B. The flat panel display includes a substrate 300 on which a self-assembled monolayer 301 is formed. The self-assembled monolayer 301 may be formed of a silane derivative, and the silane derivative may be a silane derivative having a functional group that can be easily separated by UV light. More preferably, the silane derivative may be formed of phenyltrichlorosilane.

The self-assembled monolayer 301 is divided into a hydrophilic region (A) and a hydrophobic region (B) to which UV is not irradiated by surface modification by UV.

The gate wiring 310 and the gate electrode 302 are formed on the hydrophilic region of the self-assembled monolayer 301. In this case, the gate wiring 310 and the gate electrode 302 is made of a metal nano powder.

A gate insulating layer 303 made of silicon oxide or silicon nitride is disposed on the gate wiring 310 and the gate electrode 302.

The active layer 305 is formed by stacking a channel layer and an ohmic contact layer on the gate insulating layer 303 corresponding to the gate electrode 302.

Source / drain electrodes 306a and 306b spaced apart from each other are disposed on both ends of the active layer 305. In this case, the source electrode 306a is connected to a data line orthogonal to the gate line 310.

A passivation layer 307 is formed on the source / drain electrodes 306a and 306b and has a contact hole exposing a portion of the drain electrode. The passivation layer 307 may be formed of an organic layer or an inorganic layer. For example, the organic layer may be made of photoacryl, benzocyclobutene (BCB) resin, or polyimide resin. In addition, the inorganic layer may be formed of silicon oxide or silicon nitride.

The pixel electrode 330 connected to the drain electrode exposed through the contact hole is provided on the passivation layer 307.

3A to 3E are flowcharts illustrating a method of manufacturing a flat panel display device according to a third exemplary embodiment of the present invention.

First, referring to FIG. 3A, a substrate 300 is provided. Here, the substrate 300 may be glass, plastic or metal. In this case, when the substrate 300 is made of plastic or metal, the substrate 300 may further include an inorganic film (not illustrated) made of a silicon-based compound thereon. This is to improve the adhesion to the self-assembled monolayer 301 made of a silane derivative to be formed in the process to be described later.

The self-assembled monolayer 301 is formed on the substrate 300. In this case, the self-assembled monolayer 301 may be formed of a silane derivative having a functional group which can be easily separated for UV light. More preferably, the self-assembled monolayer 301 may be formed of phenyltrichlorosilane. The self-assembled monolayer 301 may be formed by performing any one of an inkjet printing method, a spin coating, a dip coating, and a doctor blade method.

After the mask 400 is disposed on the self-assembled monolayer 301, UV light is irradiated. At this time, the mask 400 passes through the transmission part and is irradiated to a predetermined region of the self-assembled monolayer 301.

Thereafter, referring to FIG. 3B, a region irradiated with UV light onto the self-assembled monolayer 301 is modified to have a hydrophilic property. That is, the phenyl group bonded to the phenyltrichlorosilane constituting the self-assembled monolayer 301 is substituted with a hydroxyl group, thereby exhibiting hydrophilicity. As a result, the substrate 300 is classified into a hydrophilic region A and a hydrophobic region B by irradiating UV light to a predetermined region on the self-assembled monolayer 301 formed on the surface thereof.

Subsequently, a dispersion 300a in which metal nanopowders are dispersed on the self-assembled monolayer 301 is applied by a conventional method. The conventional method may be any one of an inkjet printing method, a spin coating, a dip coating, and a doctor blade method, but embodiments of the present invention are not limited thereto.

In this case, the dispersion 320a may further include a polymer, a hydrophilic solvent, a dispersant, and an additive. Here, the dispersion is made of a hydrophilic solvent, the dispersion 320a has a hydrophilic tendency, it is rearranged to the hydrophilic region (A) of the self-assembled monolayer 301.

Thereafter, referring to FIG. 3C, the gate electrode 302 and the gate wiring 310 made of metal nanopowder are formed on the self-assembled monolayer 301 by sintering the coated dispersion 320a by heat treatment. Form. At this time, during the sintering process, the polymer, the hydrophilic solvent, the dispersant, and the additive of the dispersion 320a are volatilized, and only the metal nanopowder remains on the self-assembled monolayer 301.

Thereby, a metal wiring does not need to be formed through a separate deposition process and a patterning process.

3D, a gate insulating film 303 is formed over the entire surface of the substrate 300 including the gate electrode 302 and the gate wiring 310. The gate insulating layer 303 may be formed of silicon oxide or silicon nitride by chemical vapor deposition.

Afterwards, the active layer 305 and the source electrode 306a and the drain spaced apart from each other on both ends of the active layer 305 in the region of the gate insulating layer 303 corresponding to the gate electrode 302. The electrode 306b is formed.

In detail, amorphous silicon, amorphous silicon doped with impurities, and a conductive metal are sequentially stacked on the gate insulating layer. The conductive metal may be Mo, Cr, Al or an alloy thereof.

The source metal 306a and the drain electrode 306b are formed by patterning a conductive metal located at an upper end thereof. Subsequently, the active layer 305 is formed by patterning a laminated film made of amorphous silicon and an amorphous silicon doped with impurities using the source electrode 306a and the drain electrode 306b as a mask.

Accordingly, the thin film transistor Tr including the gate electrode 302, the active layer 305, and the source / drain electrodes 306a and 306b may be formed on the substrate 300.

3E, the passivation layer 307 is formed over the entire surface of the substrate 300 including the thin film transistor Tr.

The passivation layer 307 may be formed of an organic layer or an inorganic layer. When the protective film 307 is formed of an organic film, it may be any one of a conventional coating method such as dip coating, spray coating, doctor blade, and ink jet printing, but is not limited thereto. In addition, when the protective film 307 is made of an inorganic film, it may be formed by chemical vapor deposition.

Thereafter, a contact hole exposing a part of the drain electrode 307b is formed on the passivation layer 307, and then a pixel electrode 330 connected to the drain electrode is formed. The pixel electrode 330 is formed by depositing ITO or IZO, which is a transparent conductive material, on the passivation layer 307 and then patterning the pixel electrode 330.

Subsequently, although not shown in the drawings, a flat panel display device is manufactured by a conventional method.

For example, when the flat panel display is a liquid crystal display, an alignment layer is formed on the pixel electrode 330. Subsequently, the liquid crystal display may be manufactured by bonding the upper substrate including the color filter and the transparent electrode to the substrate on which the thin film transistor is formed and then injecting the liquid crystal.

In the case where the flat panel display is an organic electroluminescent display, an organic layer including an emission layer is formed on the pixel electrode, an upper electrode is formed on the organic layer, and an encapsulation process is performed. It can manufacture. Here, the organic layer may further include a charge transport layer or a charge injection layer.

At this time, the formation of the gate wiring and the gate electrode using the self-assembled monolayer is limited to the above description, but the formation of various metal wiring such as data wiring and source / drain electrodes without departing from the technical spirit of the present invention. Applicable to the method.

As described above, according to the present invention, the metal wiring can be formed only through the process of forming the self-assembled monomolecular layer by the easy coating method and the exposure process without undergoing the exposure and development processes and the etching process, thereby reducing contamination by particles. In addition, metal wiring can be formed.

In addition, since expensive deposition equipment and an etching solution are not required, metal wiring can be formed by a low cost process, thereby reducing production costs.

In addition, since a separate development process and a photoresist stripping process are not required, the process can be simplified to improve production efficiency.

In addition, through the manufacturing method of the metal wiring, the flat panel display device can be manufactured, thereby reducing the production cost and further improving the productivity.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (16)

Providing a substrate defined by a first region and a second region; Forming a self-assembled monolayer over the entire surface of the substrate; Irradiating UV light onto the self-assembled monolayer formed in the second region; Applying a dispersion in which metal nanopowder is dispersed over the entire surface of the substrate; And Sintering the dispersion liquid formed on the substrate. The method of claim 1, The self-assembled monolayer is a metal wire manufacturing method, characterized in that formed of silane derivatives. The method of claim 2, The self-assembled monolayer is a method of manufacturing a metal wiring, characterized in that formed of phenyltrichlorosilane. The method of claim 3, wherein Wherein the first region is a hydrophobic region, and the second region is irradiated with UV light to be modified into a hydrophilic region. The method of claim 1, The dispersion liquid is formed by including a hydrophilic solvent. The method of claim 5, And the metal wiring is formed in a second region. The method of claim 1, The dispersion is a method of manufacturing a metal wiring, characterized in that it comprises a hydrophobic solvent. The method of claim 7, wherein And the metal wiring is formed in the first region. Board; Self-assembled monolayers defined by hydrophilic and hydrophobic regions formed on the substrate; A gate electrode and a gate wiring formed on the hydrophilic region of the self-assembled monolayer; A gate insulating film formed on the gate wiring and the gate electrode; An active layer formed on the gate insulating layer corresponding to the gate electrode; A source / drain electrode formed spaced apart from a predetermined portion of the active layer; A passivation layer formed on the source / drain electrode and having a contact hole exposing a portion of the drain electrode; And And a pixel electrode electrically connected to the drain electrode through the contact hole on the passivation layer. The method of claim 9, And said self-assembled monolayer is formed of phenyltrichlorosilane. The method of claim 9, And the gate electrode and the gate wiring are made of metal nano powder. Providing a substrate; Forming a self-assembled monolayer on the substrate; Irradiating UV light to a predetermined region of the self-assembled monolayer; Applying a dispersion in which a metal nanopowder is dispersed on the self-assembled monolayer; Sintering the applied dispersion to form a gate wiring and a gate electrode made of the metal nanopowder; Forming a gate insulating film on the gate wiring and the gate electrode; Forming an active layer and a source / drain electrode on the gate insulating layer corresponding to the gate electrode; Forming a passivation layer on the front surface of the substrate including the source / drain electrodes and having a contact hole exposing a portion of the drain electrode; And And forming a pixel electrode on the passivation layer and electrically connected to the drain electrode through the contact hole. The method of claim 12, The self-assembled monolayer is formed of phenyltrichlorosilane. The method of claim 12, And in the step of irradiating UV to a predetermined region of the self-assembled monolayer, the UV irradiated region is modified into a hydrophilic region. The method of claim 12, The dispersion liquid is a metal nano powder, a hydrophilic solvent and a dispersant, the manufacturing method of a flat panel display device. The method of claim 12, And the flat panel display is a liquid crystal display or an organic electroluminescent display.

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