KR20060098588A - An array substrate for in-plane switching mode lcd and method of fabricating of the same - Google Patents

Abstract

The present invention relates to a liquid crystal display device, and more particularly, to a structure of a transverse electric field type liquid crystal display device array substrate and a method of manufacturing the same.

The present invention is characterized in that a data signal shielding electrode is formed on the left and right sides of the data wiring on the same layer as the data wiring.

In this case, since the data line and the data signal shielding electrode are configured in close proximity, there is an advantage of minimizing the influence of the data signal on the pixel region.

Therefore, the field distortion in the area close to the data line can be minimized to prevent unevenness due to abnormal orientation of the liquid crystal, thereby improving aperture ratio and realizing high image quality.

Description

An array substrate for in-plane switching mode LCD and method of fabricating of the same

1 is a cross-sectional view schematically showing a part of a general transverse electric field type liquid crystal display device,

2 is an enlarged plan view showing one pixel of an array substrate for a transverse electric field type liquid crystal display device according to a first example of the related art;

3 is a cross-sectional view taken along the line II-II of FIG. 2,

4 is a cross-sectional view of a single pixel of an array substrate for a transverse electric field type liquid crystal display device according to a second conventional example.

5 is an enlarged plan view of a portion of an array substrate for a transverse electric field type liquid crystal display device according to the present invention;

6 is a cross-sectional view taken along the line VI-VI of FIG. 5,

7A-7E, 8A-8E, 9A-9E and 10A-10E are cut along the lines IV-IV, V-V, VI-VI, VIII-VIII, VIII-VIII of Fig. 5, respectively. It is a process sectional drawing shown in accordance with the process sequence of this invention.

<Brief description of the main parts of the drawing>

100: substrate 112: gate wiring

114: gate pad 116: gate electrode

118: common wiring 120: data pad

126: active layer 134: third contact hole

136: source electrode 138: drain electrode

142: data wiring 146a, b: data signal blocking electrode

158a, b, c common electrode 160a, b pixel electrode

The present invention relates to a liquid crystal display device, and more particularly, to an array substrate for a transverse electric field type liquid crystal display device and a method of manufacturing the same.

In general, the driving principle of the liquid crystal display device uses the optical anisotropy and polarization of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy to express image information.

Currently, an active matrix liquid crystal display device (AM-LCD: below Active Matrix LCD, abbreviated as liquid crystal display device) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has the best resolution and video performance. It is attracting attention.

The liquid crystal display includes a color filter substrate (upper substrate) on which a common electrode is formed, an array substrate (lower substrate) on which a pixel electrode is formed, and a liquid crystal filled between upper and lower substrates. In such a manner that the liquid crystal is driven by an electric field applied up and down, the pixel electrode has excellent characteristics such as transmittance and aperture ratio.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent. Therefore, new techniques have been proposed to overcome the above disadvantages. The liquid crystal display device to be described below has an advantage of excellent viewing angle characteristics by a liquid crystal driving method using a transverse electric field.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is an enlarged cross-sectional view illustrating a cross section of a general transverse electric field type liquid crystal display device.

As shown, the conventional transverse electric field type liquid crystal display device (B) is composed of a color filter substrate B1 and an array substrate B2 facing each other, and a liquid crystal between the color filter substrate and the array substrates B1 and B2. The layer LC is interposed.

The array substrate B2 includes a thin film transistor T, a common electrode 58, and a pixel electrode 72 for each of the pixels P1 and P2 defined in the transparent insulating substrate 50.

The thin film transistor T includes a gate electrode 52, a semiconductor layer 62 having an insulating layer 60 interposed therebetween, and a source configured to be spaced apart from each other on the semiconductor layer 62. And drain electrodes 64 and 66.

In the above configuration, the common electrode 58 and the pixel electrode 72 are configured to be spaced apart from each other in parallel on the same substrate.

In general, the common electrode 58 is made of the same material as the gate electrode 52, and the pixel electrode 72 is made of the same material as the source and drain electrodes 64 and 66. However, as shown in order to increase the aperture ratio, the pixel electrode 72 may be formed as a transparent electrode.

Although not shown, a gate wiring (not shown) extending along one side of the pixels P1 and P2 and a data wiring (not shown) extending in a direction perpendicular thereto are formed, and the common electrode 58 is disposed on the common electrode 58. A common wiring (not shown) for applying a voltage is configured.

The color filter substrate B1 includes a black matrix 32 formed on a transparent insulating substrate 30 corresponding to the gate line (not shown), the data line (not shown), and the thin film transistor T. Color filters 34a and 34b are formed corresponding to the pixels P1 and P2.

The liquid crystal layer LC is operated by the horizontal electric field 95 of the common electrode 58 and the pixel electrode 72.

Hereinafter, with reference to FIG. 2, the structure of the array substrate which comprises the above-mentioned transverse electric field type liquid crystal display device is demonstrated.

2 is a plan view schematically illustrating a configuration of a conventional array substrate for a transverse electric field type liquid crystal display device.

As shown in the drawing, the gate wiring 54 extending in one direction on the substrate 50 and the data wiring 68 are formed so as to vertically intersect the gate wiring 54 to define the pixel region P. As shown in FIG. .

In addition, the common wiring 56 crossing the pixel region P is spaced apart from and parallel to the gate wiring 54.

At the intersection of the gate line 54 and the data line 68, the gate electrode 52 connected to the gate line 54, the semiconductor layer 62 on the gate electrode 52, and the semiconductor layer 62 are provided. The thin film transistor T including the upper source electrode 64 and the drain electrode 66 is configured.

The pixel region P includes a common electrode 58 extending perpendicular to the common wiring 56 and spaced in parallel to each other, and spaced in parallel with the common electrode 58 between the common electrodes 58. The pixel electrode 72 is constituted.

Although a wide viewing angle can be implemented rather than the vertical field type of the transverse electric field array substrate as described above, there is a problem in that the aperture ratio is very low.

A description with reference to FIG. 3 is as follows.

3 is a cross-sectional view taken along the line II-II of FIG. 2.

As illustrated, a gate insulating film GL is formed on the substrate 50 in which the pixel region P is defined, and the gate insulating film GL corresponding to one side of the pixel region P is disposed on the substrate 50. The data line 68 is formed, and the pixel region P includes the common electrode 58 and the pixel electrode 72 positioned between the data line 68 and the passivation layer PL.

In the above-described configuration, the common electrode 58 is formed in close proximity to the data line 68, and the spaced area K between the common electrode 58 and the data line 68 is a region where staining occurs, and thus shielding. Should be.

In addition, even though the common electrode 58 and the pixel electrode 72 positioned in the pixel region P are formed of transparent electrodes, a portion that can be used as an opening region is about 1 μm to the left and right of each electrode, which is an area in which an electric field is applied. It is just an area corresponding to the distance.

Therefore, as described above, a configuration having a large shielding area has a problem that the aperture ratio is greatly eroded, so there is a problem of showing a very low luminance characteristic unless a particularly strong backlight is used.

In the related art, a structure for using the shielding area as an opening area has been proposed to solve this problem. This will be described with reference to FIG. 4 below.

4 is an enlarged cross-sectional view of a single pixel of an array substrate for a transverse electric field type liquid crystal display device according to a second conventional example.

As shown, a gate insulating film GL is formed on the substrate 80 on which the pixel region P is aligned, and an upper portion of the gate insulating film GL corresponding to one side and the other side of the pixel region P is formed. The data wiring 84 is formed.

In the pixel region P, the pixel electrode 88 and the common electrode 86 are spaced apart from each other in parallel.

In this case, the common electrode 86 is also formed on the upper portion of the data line 84 positioned on both sides of the pixel region P. In this way, the area M between the data line 84 and the pixel electrode 86 adjacent thereto can also be used as an opening area due to the common electrode 86 on the data line 84.

However, an organic insulating layer PL having a low dielectric constant is formed between the data line 84 and the upper common electrode 86 so that signal interference does not occur between the data line 84 and the upper common electrode 86. Do not

Further, the data signal shielding electrodes 82a and 82b through which the same signal as the common electrode 86 flows are formed on both sides of the data line 84, whereby the signal of the data line 84 is close to the region M. Do not affect.

Such a configuration has advantages in that high brightness can be realized because both regions of the data line 84 can be used as an opening region, unlike in the related art.

However, in the above-described configuration, since the data signal shielding electrodes 82a and 82b are usually formed on the same layer as the gate line (not shown), the data line 84 is interposed between the gate insulating film GL. Will be placed.

In this case, since the function of the data signal shielding electrodes 82a and 82b is degraded due to the gate insulating film GL, the signal flowing through the data line 84 interferes with the region M adjacent thereto. Cross-talk occurs, causing distortion in the electric field generated between the common electrode 86 and the pixel electrode 88.

Therefore, this causes a stain on the entire surface of the liquid crystal panel, which causes a deterioration in image quality.

In this case, there is a problem in that the opening area enlargement effect cannot be obtained even if the conditions through the design change are given.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object of the present invention is to provide a transverse electric field type liquid crystal display device that realizes high brightness and high image quality by improving aperture ratio by newly configuring a data signal shielding electrode.

An array substrate for a transverse electric field type liquid crystal display device according to the present invention for achieving the above object includes a substrate having a plurality of pixel regions defined; A plurality of gate wires extending along one side of the pixel area, and a plurality of data wires formed to perpendicularly cross the gate wires; Common wiring spaced apart in parallel with the gate wiring; A thin film transistor configured at an intersection point of the gate line and the data line; Data signal shielding electrodes positioned on both sides of the data line and positioned on the same layer as the data line; A pixel electrode positioned in the pixel region; And a common electrode positioned in the data line and the pixel area.

A transparent gate pad electrode comprising a gate pad configured at one end of the gate line, a data pad in contact with one end of the data line, the data pad configured on the same layer as the gate line, and in contact with the gate pad; It further comprises a transparent data pad electrode in contact with the data pad.

The data signal shielding electrode may be in contact with the common wire to receive a common signal.

The common electrode includes a horizontal portion formed in a direction parallel to the upper portion of the gate line, a first vertical portion extending from the horizontal portion to an upper portion of the data line, and a second vertical portion extending into the pixel area. The pixel electrode includes a horizontal portion contacting the drain electrode and a vertical portion extending from the horizontal portion to a position spaced in parallel with the second vertical portion of the common electrode.

The common electrode and the pixel electrode are made of a transparent material.

Method of manufacturing an array substrate for a transverse electric field type liquid crystal display device according to a feature of the present invention

Defining a pixel region and a switching region on the substrate; Forming a gate line extending along one side of the pixel area on the substrate and a plurality of data lines formed to vertically cross the gate line; Forming common wiring spaced apart in parallel with the gate wiring; Forming a thin film transistor configured at an intersection point of the gate line and the data line; Forming a data signal shielding electrode which is formed on both sides of the data line and is located on the same layer as the data line; And forming a common electrode on the upper portion of the data line and the pixel area, and a pixel electrode configured to be spaced apart from the common electrode in parallel.

Contacting a gate pad at one end of the gate wiring and a contact hole at one end of the data wiring, and forming a data pad of the same material as the gate wiring.

Forming a transparent gate pad electrode in contact with the gate pad and a transparent data pad electrode in contact with the data pad.

The data signal shielding electrode is formed to be in contact with the common wire through a contact hole to receive a common signal, and to contact the data hole and the data wire with the contact hole configured to contact the data wire and the data pad. The configured contact hole is formed at the same time.

The common electrode includes a horizontal portion formed in a direction parallel to the upper portion of the gate wiring, a first vertical portion extending from the horizontal portion to an upper portion of the data wiring, and a second vertical portion extending into the pixel region. The pixel electrode includes a horizontal portion contacting the drain electrode and a vertical portion extending from the horizontal portion to a position spaced in parallel with the second vertical portion of the common electrode.

An inorganic insulating film and an organic insulating film are further included between the data line, the common electrode, and the pixel electrode, and the common electrode and the pixel electrode are transparent including indium tin oxide (ITO) and indium zinc oxide (IZO). It is formed of one selected from the group of conductive metals.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

Example

The present invention is characterized in that the data signal shielding electrodes located on both sides of the data line are formed of the same material as the data line.

Hereinafter, a configuration of an array substrate for a transverse electric field type liquid crystal display device according to the present invention will be described with reference to the drawings.

5 is an enlarged plan view of one pixel of the array substrate for a transverse electric field type liquid crystal display device according to the present invention.

As shown in the drawing, a gate line 112 is formed on the substrate 100 and includes a gate pad 114 at one end thereof. The gate area 112 intersects with the gate line 112 to form a pixel area P. Referring to FIG. A data line 142 is defined and includes a data pad 120 at one end.

The gate pad 114 and the data pad 120 may be formed of the same material. The gate pad 114 and the data pad 120 may be formed on the upper portion of the gate pad 114 and the data pad 120. In this case, the data pad may be configured to contact the data line 142 and the contact hole 134.

In addition, the common wiring 118 is formed to be spaced apart in parallel with the gate wiring 112.

A thin film transistor T including a gate electrode 116, an active layer 126, a source electrode 136, and a drain electrode 138 is formed at an intersection point of the gate line 112 and the data line 142. .

The pixel region P includes the common electrodes 158a, b and c and the pixel electrodes 160a and b, and the common electrodes 158a, b and c form the pixel region P and the gate wiring ( It is characterized in that it is configured above the 112 and the data line 142.

In detail, the common electrodes 158a, b, and c extend from the horizontal portion 158a and the horizontal portion 158a to the upper portion of the data line 142. The first vertical portion 158b and the second vertical portion 158c extending to the pixel region P.

The pixel electrodes 160a and b may include a horizontal portion 160a in contact with the drain electrode 138 of the thin film transistor T, and a plurality of vertical portions extending from the horizontal portion 160a to the pixel region P. It comprises a part 160b.

The vertical portion 160b of the pixel electrode is parallel to the vertical portion 158b of the common electrode at a position spaced apart from the vertical portion 158b of the common electrode.

Characteristic in the above-described configuration, in forming the data signal shielding electrodes 146a, b for shielding the data signal on both sides of the data line 142, the same configuration as the data line 142 and the common It is configured to receive a signal from the wiring 118.

This will be described below with reference to FIG. 6.

6 is a cross-sectional view taken along the line VI-VI of FIG. 5.

As illustrated, the gate insulating layer 124 is formed on the substrate 100 in which the pixel region P is defined, and the gate insulating layer 124 corresponding to one side and the other side of the pixel region P is formed. Each of the data lines 142 is formed on the upper side of the substrate.

Data signal shielding electrodes 146a and b formed on the same layer are formed on both sides of the data line 142.

A first passivation layer 148, which is an inorganic insulating layer, and an organic insulating layer, are formed on an entire surface of the substrate 100 including the data line 142 and the data signal shielding electrodes 146a and b. The second passivation layer 150 is formed, and the common electrodes 158b and c and the pixel electrode 160b are formed on the data line 142 and the second passivation layer 150 corresponding to the pixel area P. .

In this configuration, since the data signal shielding electrodes 146a and b are located close to the data line 142, the effect of shielding the influence of the signal flowing through the data line 142 to the area M adjacent thereto is shielded. Becomes large.

Therefore, there is an advantage that can implement high brightness according to the high opening ratio and at the same time high quality.

Hereinafter, the structure of the array substrate for a transverse electric field type liquid crystal display device as described above will be described with reference to the process drawings.

7A to 10A, 7B to 10B, 7C to 10C, 7D to 10D, and 7E to 10E are IV-IV, V-V, VI-VI, VIII of Fig. 5; It is a process sectional drawing shown according to the process sequence of this invention cut along-Ⅶ, Ⅷ-Ⅷ.

As shown in FIGS. 7A to 7E, the pixel region P including the switching region S, the gate region G, and the data region D are defined on the substrate 100.

Deposition and pattern the conductive metal on the substrate 100 in which the plurality of regions S, P, G, and D are defined, and extend in one direction and include a gate pad 114 at one end thereof. ) And the common wiring 118 are spaced apart in parallel with the gate wiring 112.

At the same time, the data pad 120 is formed on the other side of the substrate 100 which is not parallel to the gate pad 114.

The gate electrode 116 may be formed to extend from the gate line 112, and the gate electrode 116 may be part of the gate line 112.

The conductive metal may be formed by selecting one or more of a conductive metal group including aluminum (Al), aluminum alloy (AlNd), chromium (Cr), copper (Cu), titanium (Ti), and molybdenum (Mo). Or it can be formed in multiple layers.

Next, silicon nitride (SiN _X ) and an oxide are formed on the entire surface of the substrate 100 on which the gate wiring 112, the gate pad 114, the gate electrode 116, the data pad 120, and the common wiring 118 are formed. A gate insulating layer 124 is formed by depositing one selected from the group of inorganic insulating materials including silicon (SiO ₂ ).

Pure amorphous silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities are deposited and patterned on the entire surface of the substrate 100 on which the gate insulating layer 124 is formed. An active layer 126 and an ohmic contact layer 128 are formed on the gate insulating layer 124 corresponding to 116.

The first contact hole 130 and the second contact hole 132 are formed to correspond to the upper portions of the common wiring 118 corresponding to both sides of the pixel region P, and at the same time, the data pad 120 is formed. A third contact hole 134 exposing one end of the side is formed.

The first, second, and third contact holes 130, 132, and 134 may be formed before or after forming the active layer and the ohmic contact layer 126, 128.

As shown in FIGS. 8A and 8E, aluminum (Al), aluminum alloy (AlNd), chromium (Cr), and tungsten are formed on the entire surface of the substrate 100 on which the active layer 126 and the ohmic contact layer 128 are formed. (W), molybdenum (Mo), titanium (Ti), molybdenum (MoW), and the like, and depositing and patterning a material selected from the group of conductive metals, such as molybdenum (MoW), spaced on top of the ohmic contact layer 128 Source and drain electrodes 136 and 138 are formed.

At the same time, an extension part 140 extending from the drain electrode 138 to the pixel region P is formed. In this case, a portion of the common wiring 118 and an extension of the gate wiring 112 form a storage capacitor C _ST using the gate insulating layer 124 as a dielectric.

At the same time, a data line 142 connected to the source electrode 136 and perpendicularly intersecting with the gate line 112 is formed.

In addition, the data signal blocking electrodes 146a and 146b may be formed to contact the lower common line 118 through the first and second contact holes 130 and 132 of FIG. 7B corresponding to both sides of the data line 142. do.

In this case, the data line 142 is formed to contact the data pad 120 through the third contact hole 134 of FIG. 5.

Next, silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) are formed on the entire surface of the substrate 100 on which the source and drain electrodes 136 and 138, the data line 142, and the data signal blocking electrodes 146a and 146b are formed. A first protective film 148 is formed by depositing one selected from the group of inorganic insulating materials including a.

The first passivation layer 148 serves to protect the exposed active layer 126 of the thin film transistor T.

9A to 9E, selected from an organic insulating material group including benzocyclobutene (BCB) and an acrylic resin on the entire surface of the substrate 100 on which the first passivation layer 148 is formed. One or more materials are coated to form the second passivation layer 150.

Next, the second passivation layer 150 and the first passivation layer 148 may be patterned to expose a drain contact hole 152 exposing the extension 140 of the drain electrode 138 and the gate pad 114. The gate pad contact hole 154 exposing the gate pad contact hole 154 and the data pad contact hole 156 exposing the data pad 120 are formed.

As shown in FIGS. 10A to 10E, one selected from a group of transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO) on the entire surface of the protective film in which the plurality of contact holes are formed is selected. By depositing and patterning, the common electrodes 158a, 158b, and 158c and the pixel electrodes 160a and 160b correspond to the pixel regions P.

The common electrodes 158a, 158b, and 158c may include a horizontal portion 158a formed on an upper portion of the gate wiring 112, and the data lines and the data signal blocking electrodes 142, 146a, and 146b formed on the horizontal portion 158a. A first vertical portion 158b extending upwardly and a second vertical portion 158c extending toward the pixel region P are formed.

The pixel electrodes 160a and 160b may include a horizontal portion 160a configured to contact the drain electrode 138 and a vertical portion spaced apart from the horizontal portion 160a in parallel with the vertical portion 158c of the common electrode. 160b).

At the same time, a gate pad electrode 162 in contact with the gate pad 114 and a data pad electrode 164 in contact with the data pad 120 are formed.

In the above-described process, after the thin film transistor is formed, an inorganic insulating film is formed using the first passivation layer 124. However, in some cases, the first passivation layer 124 may not be formed. In this case, the common wiring 118 may be formed. ) And the first and second contact holes (132a and b in FIG. 7B) for contacting the data signal shielding electrodes 142a and 142b and the third contact for contacting the data line 142 and the data pad 120. In the process of forming the hole 134 of FIG. 7B, the gate pad contact hole 154 of FIG. 9D and the data pad contact hole 156 of FIG. 9E may be formed.

According to the above process, an array substrate for a transverse electric field type liquid crystal display device according to the present invention can be manufactured.

Producing the transverse electric field array substrate as described above has the following effects.

First, by forming a common electrode with an organic insulating film interposed over the data wiring, the aperture ratio can be improved since the separation region between the data wiring and the pixel electrode can be used as an opening region, unlike in the related art.

Second, since the data signal blocking electrode is formed on the same layer as the data line, the influence of the signal flowing through the data line on the pixel area can be minimized, thereby making it possible to manufacture a liquid crystal panel that realizes high quality.

Claims (16)

A substrate in which a plurality of pixel regions are defined; A plurality of gate wires extending along one side of the pixel area, and a plurality of data wires formed to perpendicularly cross the gate wires; Common wiring spaced apart in parallel with the gate wiring; A thin film transistor configured at an intersection point of the gate line and the data line; Data signal shielding electrodes positioned on both sides of the data line and positioned on the same layer as the data line; A pixel electrode positioned in the pixel region; A common electrode positioned in the data line and the pixel region Array substrate for a transverse electric field type liquid crystal display device comprising a. The method of claim 1, And a gate pad formed at one end of the gate line and a data pad in contact with one end of the data line and formed on the same layer as the gate line. The method of claim 2, And a transparent gate pad electrode in contact with the gate pad and a transparent data pad electrode in contact with the data pad. The method of claim 2, And the data signal shielding electrode is in contact with the common wiring to receive a common signal. The method of claim 2, The common electrode includes a horizontal portion formed in a direction parallel to the upper portion of the gate line, a first vertical portion extending from the horizontal portion to an upper portion of the data line, and a second vertical portion extending into the pixel area. And the pixel electrode includes a horizontal portion in contact with the drain electrode, and a vertical portion extending from the horizontal portion to a position spaced apart from and parallel to the second vertical portion of the common electrode. The method of claim 1, And the common electrode and the pixel electrode are made of a transparent material. Defining a pixel region and a switching region on the substrate; Forming a gate line extending along one side of the pixel area on the substrate and a plurality of data lines formed to vertically cross the gate line; Forming common wiring spaced apart in parallel with the gate wiring; Forming a thin film transistor configured at an intersection point of the gate line and the data line; Forming a data signal shielding electrode which is formed on both sides of the data line and is located on the same layer as the data line; Forming a common electrode on the upper portion of the data line and the pixel area, and a pixel electrode configured to be spaced apart from the common electrode in parallel with the common electrode; Array substrate manufacturing method for a transverse electric field type liquid crystal display device comprising a. The method of claim 7, wherein And translating a gate pad at one end of the gate wiring and a contact hole at one end of the data wiring, and forming a data pad of the same material as the gate wiring. Method for manufacturing an array substrate for use. The method of claim 8, Forming a transparent gate pad electrode in contact with the gate pad and a transparent data pad electrode in contact with the data pad. The method of claim 8, And the data signal shielding electrode is in contact with the common wiring through a contact hole to receive a common signal. The method according to any one of claims 8 to 10, And a contact hole configured to contact the data line and the data pad and a contact hole configured to make contact with the data signal shielding electrode and the common line at the same time. The method of claim 7, wherein The common electrode includes a horizontal portion formed in a direction parallel to the upper portion of the gate wiring, a first vertical portion extending from the horizontal portion to an upper portion of the data wiring, and a second vertical portion extending into the pixel region. And the pixel electrode includes a horizontal portion in contact with the drain electrode, and a vertical portion extending from the horizontal portion to a position spaced apart from and parallel to the second vertical portion of the common electrode. Way. The method of claim 7, wherein And an inorganic insulating film and an organic insulating film are disposed between the data line, the common electrode and the pixel electrode. The method of claim 7, wherein And the common electrode and the pixel electrode are formed of one selected from a group of transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO). Defining a pixel region on the substrate; A gate wiring including a gate pad at one end and extending in one direction along one side of the pixel region on the substrate, a gate electrode connected thereto, a data pad on the other side of the substrate not parallel to the gate pad, and the gate wiring Forming common wiring spaced apart in parallel with the wiring; Forming a gate insulating film on an entire surface of the substrate on which the gate wiring, the gate pad, and the data pad and the common wiring are formed; Forming an active layer and an ohmic contact layer stacked on a gate insulating layer corresponding to an upper portion of the gate electrode; Forming a plurality of first contact holes exposing the common wiring and second contact holes exposing a portion of the data pad corresponding to both sides of the pixel area; A source electrode and a drain electrode spaced apart from and in contact with the ohmic contact layer; Forming a data signal shielding electrode in contact with a lower common wiring; Sequentially forming an inorganic insulating film and an organic insulating film on the front surface of the substrate on which the source and drain electrodes, the data signal shielding electrode, and the data wiring are formed to form a first passivation layer and a second protection layer; Patterning the first and second passivation layers to form a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing the gate pad, and a data pad contact hole exposing the data pad; A pixel electrode extending into the pixel region while in contact with the drain contact hole, a common electrode positioned on the data line and the gate line and extending vertically extending from the gate line to the pixel area, and the gate pad; And a transparent gate pad electrode in contact with the transparent data pad electrode in contact with the data pad. The method of claim 15, The common electrode, the pixel electrode, the data pad electrode, and the gate pad electrode may be formed of one selected from a group of transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO). Array substrate manufacturing method.

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