KR20050101578A - Substrate used for display device and method of manufacturing the display device and exposure system - Google Patents

Abstract

Disclosed are a substrate for a display device, a method of manufacturing the display device, and an exposure system for manufacturing the same. The substrate for a display device is a substrate having a first region in which an image is displayed and a second region formed around the first region, and is formed on the same layer as the thin film pattern disposed in the first region, and the first region disposed in the second region. It is formed on the same layer as the alignment key pattern and the thin film pattern, and includes a second alignment key pattern disposed in the second area. Thus, when patterning the photosensitive film formed on the substrate by a photographic process, the alignment position of the patterned thin film is compensated at least twice so that the pattern can be formed at a more accurate position.

Description

Substrate for display device, manufacturing method of display device and exposure system for manufacturing same {SUBSTRATE USED FOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE AND EXPOSURE SYSTEM}

The present invention relates to a substrate for a display device, a method of manufacturing the display device, and an exposure system for manufacturing the same. More specifically, the present invention relates to a substrate for a display device having an improved display quality of an image, a manufacturing method of the display device, and an exposure system for manufacturing the same.

In general, most information processing apparatuses have a display apparatus for converting an electrical signal into an image.

As the display device, for example, a liquid crystal display device, an organic light emitting display device, a plasma display device, and the like are typical. These displays commonly display full-color images using thin film transistors or the like formed on a substrate.

The thin film transistor commonly includes a gate electrode, a channel pattern, a source electrode, and a drain electrode. The gate electrode, the source electrode, and the drain electrodes are formed by patterning a metal thin film, and the channel pattern is formed by patterning a semiconductor thin film such as an amorphous silicon thin film.

In order to form the gate electrode, channel pattern, source electrode and drain electrodes of the thin film transistor, the metal thin film or the semiconductor thin film is patterned by a photo-etch process.

In this case, since the gate electrode, the channel pattern, the source electrode, and the drain electrode of the thin film transistor are electrically connected to each other, when the alignment of the gate electrode, the channel pattern, the source electrode, and the drain electrode is poor, the display device may be excellent in display. Images cannot be displayed.

In order to prevent such a problem, an alignment key for aligning at least two thin film patterns is provided on the substrate used in the display device.

In general, the alignment keys formed on the substrate are aligned with the mask alignment keys formed on the mask used in the photographic process. The measurement apparatus measures the alignment key and the mask alignment key to determine misalignment of the gate electrode, the channel pattern, the source electrode, and the drain electrodes to correct the position of the substrate and the mask.

However, when an unexpected measurement error occurs from the measurement device measuring the alignment key and the mask alignment key, a serious pattern formation failure occurs.

Accordingly, the present invention has been made in view of such a conventional problem, and a first object of the present invention is to provide a substrate for a display device in which photographic process defects are greatly reduced.

In addition, a second object of the present invention is to provide a method of manufacturing a display device, which greatly reduces defects occurring in the process of manufacturing the display device.

Further, a third object of the present invention is to provide an exposure system for manufacturing the substrate for a display device.

In order to realize the first object of the present invention, the present invention provides a substrate having a first region in which an image is displayed and a second region formed around the first region, the same layer as the thin film pattern disposed in the first region. A substrate for a display device is formed, and is formed on the same layer as a first alignment key pattern and a thin film pattern disposed in a second region, and includes a second alignment key pattern disposed in a second region.

In addition, in order to realize the second object of the present invention, the present invention is to pattern the first thin film formed on the substrate to form a thin film pattern in the first region, the first and second alignment in the second region disposed around the first region Key patterns are formed, and a second thin film and a photoresist film are successively formed on the substrate. Next, the mask is aligned with the substrate, and the first position correction data is calculated by measuring the first mask alignment key pattern and the first alignment key pattern formed on the mask. Subsequently, the second position correction data is calculated by measuring the second mask alignment key pattern and the second alignment key pattern formed on the mask, and after correcting the positions of the substrate and the mask by the first and second position correction data, A manufacturing method of a display device for exposing a photosensitive film is provided.

Further, in order to realize the third object of the present invention, the present invention provides a light supply device for supplying light, a mask body disposed on a path of light, an active pattern disposed on a first area of the mask body, A mask including a first mask alignment pattern disposed on a second region located at a periphery, a second mask alignment pattern disposed at a distance from the first mask alignment pattern, and disposed at a side facing the mask, the first mask alignment pattern Measuring a substrate plate on which a substrate including a first alignment pattern aligned with the second alignment pattern and a second alignment pattern aligned with the second mask alignment pattern, and first and third mask alignment patterns and first and second alignment patterns, respectively It provides an exposure system including a measurement device.

According to the present invention, at least two alignment keys are formed on the substrate and at least two mask alignment keys on the mask, respectively, and the alignment key and the mask alignment key are respectively measured to prevent photographic process defects.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Display Board

Example 1

1 is a plan view of a substrate for a display device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a thin film transistor and a pixel electrode formed by thin film patterns formed in the first region illustrated in FIG. 1. 3 is an enlarged view of a portion A of FIG. 1. 4 is a cross-sectional view taken along line B ₁ -B ₂ of FIG. 1.

Referring to FIG. 1, the display substrate 100 includes a substrate 110, a first alignment key pattern 120, and a second alignment key pattern 130.

In the present embodiment, a transparent substrate suitable for the display device is used as the substrate 110. For example, the substrate 110 is a glass substrate. In this embodiment, the substrate 110 has a cuboid plate shape.

The first region 112 and the second region 114 are formed in the substrate 110. The first region 112 is disposed at the center of the substrate 110 when viewed in plan view, and the second region 114 is disposed at the periphery of the first region 112 when viewed in plan view.

1 and 2, a thin film pattern for displaying an image is formed in the first region 112. For example, the thin film pattern may be any one of a gate electrode G, a source electrode S, a channel pattern C, and a drain electrode D for forming the thin film transistor TR.

Alternatively, the thin film pattern may be a pixel electrode PE to which a voltage is applied from the thin film transistor TR, or one of a black matrix and a color filter.

1 and 3, an image is not displayed in the second region 114 formed around the first region 112. On the other hand, the first alignment key pattern 120 and the second alignment key pattern 130 are formed in the second region 114 to precisely adjust the position of the thin film pattern formed in the first region 112.

3 and 4, the first alignment key pattern 120 is formed on the same layer as each thin film pattern formed in the first region 112. Preferably, the first alignment key pattern 120 is formed together when the thin film pattern is formed by a photo-etch process.

The first alignment key pattern 120 is composed of a first alignment key 122 and a second alignment key 124.

The first alignment key 122 has a rectangular parallelepiped shape, and the long axis of the first alignment key 124 is disposed in a direction parallel to the first direction. The second alignment key 124 has a rectangular parallelepiped shape, and the long axis of the second alignment key 124 is disposed in parallel with the second direction substantially perpendicular to the first direction.

The second alignment key pattern 130 is formed on the same layer as the thin film pattern. Preferably, the second alignment key pattern 130 is formed together when the thin film pattern is formed by a photo-etch process.

The second alignment key pattern 130 is composed of a third alignment key 132 and a fourth alignment key 134.

The third alignment key 132 has a rectangular parallelepiped shape, and the long axis of the third alignment key 132 is disposed in a direction parallel to the first direction. The fourth alignment key 134 has a rectangular parallelepiped shape, and the long axis of the fourth alignment key 134 is disposed in parallel with the second direction substantially perpendicular to the first direction.

In this embodiment, the first and second alignment key patterns 120 and 130 formed in the second region 114 of the substrate 110 greatly reduce the measurement error caused by metrology equipment (not shown) used in the photographic process. Let's do it.

For example, the measurement equipment measures the first alignment key pattern 120 and the mask alignment key pattern (not shown) of the mask (not shown) to generate the first measurement data. In addition, the measurement equipment measures the second alignment key pattern 130 and the mask alignment key pattern of the mask to generate second measurement data.

The metrology equipment calculates an average value of the measured first measurement data and the second measurement data, respectively, and the positions of the mask and the substrate are rearranged by the average value.

5 is an enlarged view illustrating an enlarged portion C of FIG. 1.

Referring to FIG. 5, shapes of the first alignment key pattern 120 and the second alignment key pattern 130 may be modified in various ways.

For example, the first alignment key pattern 120 and the second alignment key pattern 130 may be arranged in a cross shape, and the first alignment key pattern 120 and the second alignment key pattern 130 may be alternately arranged. Can be. Thus, one first alignment key pattern 120 is arranged in a direction parallel to the first direction, for example, one is arranged side by side, and two second alignment key patterns 130 are arranged in a direction parallel to the second direction. Arranged parallel to each other.

As described in detail above, the measurement instrument measures each of the at least two alignment key patterns and the alignment key patterns formed on the mask, and corrects the position of the mask and the substrate by the average thereof, thereby greatly increasing the misalignment of the mask and the substrate. Can be reduced.

Example 2

6 is a plan view illustrating a substrate for a display device according to a second exemplary embodiment of the present invention. FIG. 7 is a cross-sectional view taken along the line D ₁ -D ₂ of FIG. 6. The substrate for display device according to the second embodiment of the present invention is the same as the substrate for display device of Embodiment 1 except for the structure of the first and second alignment key patterns of Embodiment 1. Therefore, the same members are denoted by the same reference numerals as those in the first embodiment, and duplicated descriptions thereof will be omitted.

6 and 7, the substrate 100 for a display device includes a substrate 110, a first alignment key pattern 140, and a second alignment key pattern 150.

In the second area 114 formed around the first area 112, no image is displayed. On the other hand, the first alignment key pattern 140 and the second alignment key pattern 150 are formed in the second region 114 to precisely adjust the position of the thin film pattern formed in the first region 112.

Referring to FIG. 7, the first alignment key pattern 140 is formed on the same layer as the first thin film pattern formed in the first region 112. Preferably, the first alignment key pattern 140 is formed together when the first thin film pattern is formed by a photo-etch process.

In the present embodiment, the first thin film pattern is any one of a gate electrode, a gate signal line, a source electrode, a data signal line, a channel pattern, and a drain electrode for forming the thin film transistor. Alternatively, the first thin film pattern may be a pixel electrode receiving a voltage from the thin film transistor, or may be one of a black matrix and color filters.

The first alignment key pattern 140 is composed of a first alignment key 142 and a second alignment key 144.

The first alignment key 142 has a rectangular shape, and the long axis of the first alignment key 142 is disposed in a direction parallel to the first direction. The second alignment key 144 has a rectangular shape, and the long axis of the second alignment key 144 is disposed parallel to the second direction that is substantially orthogonal to the first direction.

In the present embodiment, the second alignment key pattern 150 is formed on the same layer as the second thin film pattern formed in association with the first thin film pattern. Preferably, the second alignment key pattern 150 is formed together when forming the second thin film pattern by a photo-etch process.

In the present embodiment, the second thin film pattern includes remaining thin film patterns except for the first thin film pattern. For example, when the first thin film pattern is a gate electrode and a gate signal line, the second thin film pattern is any one of a channel pattern, a source electrode, a data signal line drain electrode, and a pixel electrode. Alternatively, when the first thin film pattern is a black matrix, the second thin film pattern may be a color filter.

The second sort key pattern 150 is composed of a third sort key 152 and a fourth sort key 154.

The third alignment key 152 has a rectangular shape, and the long axis of the third alignment key 152 is disposed in a direction parallel to the first direction. The fourth alignment key 154 has a rectangular shape, and the long axis of the fourth alignment key 154 is disposed parallel to the second direction that is substantially orthogonal to the first direction.

Referring back to FIG. 6, the first sort key pattern 140 and the second sort key pattern 150 are arranged in a cross shape, and the first sort key pattern 140 and the second sort key pattern 150 alternate. It can be arranged as. Accordingly, two first alignment key patterns 140 are arranged side by side in a direction parallel to the first direction, and two second alignment key patterns 150 are arranged in parallel with each other in a direction parallel to the second direction. .

In this embodiment, the first and second alignment key patterns 140 and 150 formed in the second region 114 of the substrate 110 greatly reduce the measurement error of the metrology equipment in the photographic process.

For example, the measurement equipment measures the first alignment key pattern 140 and the first mask alignment key pattern (not shown) formed in the mask to generate first measurement data. Subsequently, the measurement equipment measures the second alignment key pattern 150 and the second mask alignment key pattern (not shown) formed in the mask to generate second measurement data.

The measurement equipment calculates an average value of the first measurement data and the second measurement data, and the positions of the mask and the substrate are rearranged by the average value.

Referring back to FIG. 6, the shapes of the first alignment key pattern 140 and the second alignment key pattern 150 may be modified in various ways.

For example, the first alignment key pattern 140 and the second alignment key pattern 150 are arranged in a cross shape on different layers, and the first alignment key pattern 140 and the second alignment key pattern 150 are arranged in a cross shape. May be alternately disposed on the substrate 110. Accordingly, two first alignment key patterns 140 are arranged side by side in a direction parallel to the first direction, and two second alignment key patterns 150 are arranged in parallel with each other in a direction parallel to the second direction. .

As such, when the first alignment key pattern 140 is formed with the first thin film pattern and the second alignment key pattern 150 is formed with the second thin film pattern, the first alignment key pattern 140 and the second alignment are formed. When the key pattern 150 is measured to form the subsequent thin film pattern in the first region 112, misalignment of the subsequent thin film pattern may be greatly reduced.

Manufacturing method of display device

Example 3

8 is a flowchart illustrating a manufacturing method of a display device according to a third exemplary embodiment of the present invention. 9 is a plan view illustrating a substrate on which a thin film pattern, first and second alignment key patterns are formed, according to a third embodiment of the present invention.

8 and 9, a second region 114 surrounding the first region 112 and the first region 112 of the substrate 110 included in the display apparatus substrate 100 for manufacturing a display device. ), A predetermined first thin film (not shown) is formed. The first thin film is patterned by a photo-etching process, and as a result, a thin film pattern is formed in the first region 112, and the first alignment key pattern 120 and the second alignment key pattern 130 are formed in the second region ( 114) (step 100).

In this case, the thin film pattern may be any one of a thin film transistor, a pixel electrode, a black matrix, and a color filter.

While the thin film pattern is formed on the first region 112, the first alignment key pattern 120 formed on the second region 114 includes a first alignment key 122 and a second alignment key 124. The first alignment key 122 is formed in the second area 114 in a direction parallel to the first direction, and the second alignment key 124 is substantially orthogonal to the first direction in the second area 114. It is formed in a direction parallel to the two directions.

While the thin film pattern is formed on the first region 112, the second alignment key pattern 130 formed on the second region 114 includes a third alignment key 132 and a fourth alignment key 134. The third alignment key 132 is formed in the second area 114 in a direction parallel to the first direction, and the fourth alignment key 134 is substantially orthogonal to the first direction in the second area 114. It is formed in a direction parallel to the two directions.

FIG. 10 is a cross-sectional view illustrating that a second thin film and a photosensitive film are formed on the substrate shown in FIG. 9.

8 and 10, after the thin film pattern and the first and second alignment key patterns 120 and 130 are formed on the substrate 110, the second thin film 111 is formed on the substrate 110 and the second thin film. On the upper surface of 111, a photosensitive film 112 is formed continuously (step 110). In this case, the second thin film 111 and the photosensitive film 112 are formed in the first region 112 and the second region 114 of the substrate 110.

FIG. 11 is a conceptual diagram illustrating that a mask is aligned with the substrate illustrated in FIG. 10. 12 is a plan view of FIG. 11. FIG. 13 is an enlarged view of a portion E of FIG. 12.

8 and 11, the mask 200 is aligned with the substrate 110 on which the second thin film 111 and the photosensitive film 112 are formed (step 120).

12 and 13, the mask 200 may include a mask pattern 200a, a first mask alignment key pattern 220, and a second mask alignment key pattern 230 for patterning the second thin film 111. Include. The mask pattern 200a is formed on the third region 212 corresponding to the first region 112 of the substrate 110, and the first and second mask alignment key patterns 220 and 230 are formed on the substrate 110. It is formed on the fourth region 214 corresponding to the second region 114.

The first mask alignment key pattern 220 includes first mask alignment keys 222 and second mask alignment keys 224.

The first mask alignment keys 222 are disposed on both sides of the first alignment key 122 of the first alignment key pattern 120 formed on the substrate 110, and the first mask alignment keys 222 and the first The alignment keys 122 are arranged parallel to each other.

The second mask alignment keys 224 are disposed on both sides of the second alignment key 124 of the first alignment key pattern 120 formed on the substrate 110, and the second mask alignment keys 224 and the second Alignment keys 124 are arranged parallel to each other.

The second mask alignment key pattern 230 includes third mask alignment keys 132 and fourth mask alignment keys 134.

The third mask alignment keys 232 are disposed on both sides of the third alignment key 132 of the second alignment key pattern 130 formed on the substrate 110, and the third mask alignment keys 232 and the third mask alignment keys 232 are disposed on the substrate 110. Alignment keys 132 are arranged parallel to each other.

The fourth mask alignment keys 234 are disposed on both sides of the fourth alignment key 134 of the second alignment key pattern 130 formed on the substrate 110, and the fourth mask alignment keys 234 and the fourth Alignment keys 134 are arranged parallel to each other.

Referring back to FIG. 8, when the first mask alignment key pattern 220 is aligned with the first alignment key pattern 120, and the second mask alignment key pattern 230 is aligned with the second alignment key pattern 130, The measurement device measures the first alignment key pattern 120 and the first mask alignment key pattern 220, and as a result, the first position correction data is calculated from the measurement device (step 130).

When the first position correction data of the first alignment key pattern 120 and the first mask alignment key pattern 220 is calculated, the measurement apparatus again returns the second alignment key pattern 130 and the second mask alignment key pattern 230. Is measured, and as a result, the second position correction data is calculated from the measuring device (step 140).

Referring back to FIG. 8, when the first and second position correction data are respectively calculated from the measurement apparatus, the positions of the mask 200 and the substrate 100 are precisely corrected by the first and second position correction data. (Step 150). In this case, the position correction of the mask 200 and the substrate 100 may be corrected by an average value of the first and second position correction data.

After the positions of the mask 200 and the substrate 100 are corrected, the light directed toward the mask 200 is scanned on the upper portion of the mask 200 so that the photosensitive film 112 formed on the substrate 100 is exposed by light ( Step 160).

14 is a cross-sectional view illustrating a pixel formed in the first region illustrated in FIG. 9. FIG. 15 is a cross-sectional view illustrating a color filter formed in the first region illustrated in FIG. 9.

Referring to FIG. 14, the thin film is processed in the same manner as described above to form the pixel P including the thin film transistor TR and the pixel electrode PE in the first region 112 of the substrate 110. When the resolution of the display device is 1024 × 768, 1024 × 768 × 3 pixels P are formed in the first region 112.

The thin film transistor TR includes a gate electrode G, an insulating layer I, a channel layer C, a source electrode S, and a drain electrode D. FIG.

The gate electrode G is formed on the substrate 110, and the gate electrode G is insulated by the insulating film I. Two channel layers C are formed on the insulating layer I to correspond to the gate electrode G. FIG. The source electrode S and the drain electrode D are electrically connected to two channel layers C, respectively.

The pixel electrode PE includes a transparent and conductive material, for example, indium zinc oxide (IZO) or indium tin oxide (ITO).

Hereinafter, the display device substrate having the thin film transistor TR and the pixel electrode PE will be referred to as a TFT substrate.

Referring to FIG. 15, the black matrix 115 and the color filter 116 may be formed in the first region 112 of the substrate 110 by processing the thin film as described above.

The black matrix 115 is disposed in a lattice shape when viewed in plan view in the first region 112. The black matrix 115 may be formed by patterning a chromium thin film, a chromium oxide thin film, or a black organic film.

The color filter 116 is disposed at a position facing the pixel electrode PE, and the color filter 116 includes a red color filter 116a, a green color filter 116b, and a blue color filter 116c.

Hereinafter, the display device substrate having the black matrix 115 and the color filter 116 will be referred to as a color filter substrate.

In the state where the TFT substrate and the color filter substrate are respectively formed, the TFT substrate and the color filter substrate are assembled together so that a liquid crystal layer is interposed between the TFT substrate and the color filter substrate. In this case, the liquid crystal layer may be injected after the TFT substrate and the color filter substrate are assembled together, or may be injected before the TFT substrate and the color filter substrate are assembled.

As described above in detail, at least two alignment key patterns are formed in the second region 114 disposed around the first region 112 of the substrate 110 and aligned with the alignment key patterns in the mask. Each of the mask alignment key patterns is formed. Each alignment key pattern and mask alignment key pattern are individually measured by the measuring device to calculate position correction data. The mask and the substrate are corrected by the average value of the position correction data, so that the measurement apparatus can recognize that an error has occurred while measuring either the alignment key pattern and the mask alignment key pattern.

Example 4

16 is a flowchart illustrating a method of manufacturing a display device according to a fourth embodiment of the present invention. 17 is a plan view showing a substrate on which a thin film pattern and a first alignment key pattern are formed according to a fourth embodiment of the present invention. FIG. 18 is a plan view illustrating a second alignment key pattern formed on the substrate illustrated in FIG. 17. FIG. 19 is a plan view illustrating a mask aligned to the substrate shown in FIG. 18.

16 and 17, a predetermined first thin film (not shown) is formed in the first region 112 and the second region 114 surrounding the first region 112 of the substrate 110 of the substrate 100 for display device. O) is formed. The first thin film is patterned by a photo-etching process, whereby a first thin film pattern is formed in the first region 112 and a first alignment key pattern 140 is formed in the second region 114 (step 210).

In this case, the first thin film pattern may be any one of a thin film transistor, a pixel electrode, a black matrix, and a color filter included in the display device.

The first alignment key pattern 140 formed while the first thin film pattern is formed includes a first alignment key 142 and a second alignment key 144. The first alignment key 142 is formed in the second area 114 in a direction parallel to the first direction, and the second alignment key 144 is substantially orthogonal to the first direction in the second area 114. It is formed in a direction parallel to the two directions.

Alternatively, the first alignment key 142 and the second alignment key 144 of the first alignment key pattern 140 may be formed in a direction parallel to the first direction.

Referring to FIG. 18, a second thin film is formed on the substrate 110, and the second thin film is aligned by the first alignment key pattern 140, and then patterned to form a second thin film pattern on the first region 112. A second alignment key pattern 150 is formed in the second region 114 (step 220).

The second alignment key pattern 150 formed while the second thin film pattern is formed includes a third alignment key 152 and a fourth alignment key 154. The third alignment key 152 is formed in the second area 114 in a direction parallel to the first direction, and the fourth alignment key 154 is substantially orthogonal to the first direction in the second area 114. It is formed in a direction parallel to the two directions.

Referring to FIG. 16 again, after the first and second alignment key patterns 140 and 150 are formed on the substrate 110, a third thin film is formed on the substrate 110, and a photoresist film is continuously formed on the upper surface of the third thin film. (Step 230). In this case, the third thin film and the photoresist film are formed in the first region 112 and the second region 114 of the substrate 110.

Referring to FIG. 19, a mask is aligned with the substrate 110 on which the third thin film and the photosensitive film are formed (step 240).

Referring to FIG. 19, the mask 300 includes a mask pattern for patterning a third thin film, a first mask alignment key pattern 320, and a second mask alignment key pattern 330. The mask pattern is formed with a third region 312 corresponding to the first region 112 of the substrate 110, and the first and second mask alignment key patterns 320 and 330 are formed of the second region 114 of the substrate 110. Is formed in the corresponding position.

The first mask alignment key pattern 320 includes first mask alignment keys 322 and second mask alignment keys 324.

The first mask alignment keys 322 are disposed on both sides of the first alignment key 142 of the first alignment key pattern 140 formed on the substrate 110, and the first mask alignment keys 322 and the first mask alignment keys 322 are formed on the substrate 110. Alignment keys 142 are arranged parallel to each other.

The second mask alignment keys 330 are disposed on both sides of the second alignment key 144 of the first alignment key pattern 140 formed on the substrate 110, and the second mask alignment keys 330 and the first mask alignment keys 330 are disposed on the substrate 110. The two alignment keys 144 are arranged parallel to each other.

The second mask alignment key pattern 330 includes third mask alignment keys 332 and fourth mask alignment keys 334.

The third mask alignment keys 332 are disposed on both sides of the third alignment key 152 of the second alignment key pattern 150 formed on the substrate 110. The three alignment keys 152 are arranged parallel to each other. The fourth mask alignment keys 334 are disposed on both sides of the fourth alignment key 154 of the second alignment key pattern 150 formed on the substrate 110, and the fourth mask alignment keys 334 and the first mask alignment keys 334 are disposed on the substrate 110. The four alignment keys 154 are arranged parallel to each other.

Referring back to FIG. 16, when the first mask alignment key pattern 320 is aligned with the first alignment key pattern 140 and the second mask alignment key pattern 330 is aligned with the second alignment key pattern 150, The measurement apparatus measures the first alignment key pattern 140 and the first mask alignment key pattern 320 to calculate first position correction data (step 250).

When the first position correction data is calculated by the first alignment key pattern 140 and the first mask alignment key patterns 320, the metrology apparatus again includes the second alignment key pattern 150 and the second mask alignment key pattern ( 330 is measured to calculate second position correction data (step 260).

Referring back to FIG. 16, once the first and second position correction data are calculated, the positions of the mask 300 and the substrate 100 are corrected by the first and second position correction data (step 270). In this case, the position correction of the mask 300 and the substrate 100 may be corrected by an average value of the first and second position correction data.

After the positions of the mask 300 and the substrate 100 are corrected, the light directed toward the mask 300 is scanned on the upper portion of the mask 300 so that the photosensitive film formed on the substrate 100 is exposed by light (step 280). .

As described above in detail, two alignment key patterns having different layers are formed in the second region 114 disposed around the first region 112 of the substrate 100, and the mask 300 is formed on the mask 300. Form mask alignment key patterns that are aligned with the alignment key patterns. Each alignment key pattern and mask alignment key pattern are respectively measured by the measuring device to calculate position correction data. The position of the mask 300 and the substrate 100 is corrected by the average value of the position correction data, so that the measurement apparatus can recognize that an error has occurred while measuring either the alignment key pattern and the mask alignment key pattern.

Exposure system

Example 5

20 is a conceptual diagram of an exposure system according to a fifth embodiment of the present invention.

Referring to FIG. 20, the exposure system 400 includes a light supply device 410, a mask 420, a substrate plate 430, and a measurement device 440.

The light supply device 410 supplies light toward the mask 420 and the substrate plate 430.

The mask 420 includes a mask body 422, an active pattern 424, a first mask alignment pattern 426, and a second mask alignment pattern 428.

The mask body 422 has a cuboid plate shape. The first mask region 422a and the second mask region 422b are formed on the mask body 422. In plan view, the second mask region 422b of the mask body 422 is disposed around the first mask region 422a.

The active pattern 424 is disposed on the first mask region 422a. The active pattern 424 is a pattern for forming a pattern consisting of a thin film transistor, a pixel electrode, a black matrix, and color filters.

The first mask alignment pattern 426 and the second mask alignment pattern 428 are disposed on the second mask area 422b, and in this embodiment, the first and second mask alignment patterns 426 and 428 have the same shape. Have

The substrate plate 430 is disposed at a position spaced apart from the mask 420, and a substrate 100 having a photoresist film and a thin film etched by the photoresist film is disposed.

In this case, the substrate 100 has a first region and a second region in the same manner as the first and second mask regions 422a and 422b of the mask 420. The photoresist formed in the first region is patterned in the same shape as the active pattern 424, and in the second region, the first alignment key pattern 120 and the second alignment key are aligned with the first and second mask alignment patterns 426 and 428. The pattern 130 is formed.

The first alignment key pattern 120 and the second alignment key pattern 130 are aligned with the first mask alignment key pattern 426 and the second mask alignment key pattern 428 of the mask 420, respectively.

The measurement device 440 measures the first alignment key pattern 120 and the first mask alignment key pattern 426 to generate first position correction data. In addition, the measurement device 440 measures the second alignment key pattern 130 and the second mask alignment key pattern 428 to generate second position correction data.

The measurement device 440 calculates an average value of the first position correction data and the second position correction data, and the substrate 100 and the mask 420 are aligned again by the average value.

As described in detail above, when patterning the photoresist formed on the substrate by a photographic process, the alignment position of the patterned thin film is compensated at least two times so that the pattern can be formed at a more accurate position.

In the detailed description of the present invention described above with reference to a preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge in the scope of the invention described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

1 is a plan view of a substrate for a display device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a thin film transistor and a pixel electrode formed by thin film patterns formed in the first region illustrated in FIG. 1.

3 is an enlarged view of a portion A of FIG. 1.

4 is a cross-sectional view taken along line B ₁ -B ₂ of FIG. 1.

5 is an enlarged view illustrating an enlarged portion C of FIG. 1.

6 is a plan view illustrating a substrate for a display device according to a second exemplary embodiment of the present invention.

FIG. 7 is a cross-sectional view taken along the line D ₁ -D ₂ of FIG. 6.

8 is a flowchart illustrating a manufacturing method of a display device according to a third exemplary embodiment of the present invention.

9 is a plan view illustrating a substrate on which a thin film pattern, first and second alignment key patterns are formed, according to a third embodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating that a second thin film and a photosensitive film are formed on the substrate shown in FIG. 9.

FIG. 11 is a conceptual diagram illustrating that a mask is aligned with the substrate illustrated in FIG. 10.

12 is a plan view of FIG. 11.

FIG. 13 is an enlarged view of a portion E of FIG. 12.

14 is a cross-sectional view illustrating a pixel formed in the first region illustrated in FIG. 9.

FIG. 15 is a cross-sectional view illustrating a color filter formed in the first region illustrated in FIG. 9.

16 is a flowchart illustrating a method of manufacturing a display device according to a fourth embodiment of the present invention.

17 is a plan view showing a substrate on which a thin film pattern and a first alignment key pattern are formed according to a fourth embodiment of the present invention.

FIG. 18 is a plan view illustrating a second alignment key pattern formed on the substrate illustrated in FIG. 17.

FIG. 19 is a plan view illustrating a mask aligned to the substrate shown in FIG. 18.

20 is a conceptual diagram of an exposure system according to a fifth embodiment of the present invention.

Claims (27)

A substrate having a first region in which an image is displayed and a second region formed around the first region; A first alignment key pattern formed on the same layer as the thin film pattern disposed in the first region and disposed in the second region; And And a second alignment key pattern formed on the same layer as the thin film pattern and disposed in the second area. The method of claim 1, wherein the first alignment key pattern comprises a first alignment key disposed in parallel in a first direction and a second alignment key disposed in parallel in a second direction substantially perpendicular to the first direction. A display device substrate, characterized in that. The method of claim 1, wherein the second alignment key pattern comprises a third alignment key disposed in parallel in a first direction and a fourth alignment key disposed in parallel in a second direction substantially perpendicular to the first direction. A display device substrate, characterized in that. The display device substrate of claim 1, wherein the first and second alignment key patterns are alternately arranged in a cross shape. A substrate having a first region in which an image is displayed and a second region formed around the first region; A first alignment key pattern formed on the same layer as the first thin film pattern disposed in the first region and disposed in the second region; And And a second alignment key pattern formed on the same layer as the second thin film pattern disposed in the first region in association with the first thin film pattern and disposed in the second region. The device of claim 5, wherein the first alignment key pattern comprises a first alignment key disposed in parallel in a first direction and a second alignment key disposed in parallel in a second direction substantially perpendicular to the first direction. A display device substrate, characterized in that. The method of claim 5, wherein the second alignment key pattern comprises a first alignment key disposed in parallel in a first direction and a second alignment key disposed in parallel in a second direction substantially perpendicular to the first direction. A display device substrate, characterized in that. The substrate of claim 5, wherein the first and second alignment key patterns are alternately arranged in a cross shape. Patterning a first thin film formed on a substrate to form a thin film pattern in a first region and first and second alignment key patterns in a second region disposed around the first region; Continuously forming a second thin film and a photoresist film on the substrate; Aligning a mask with the substrate; Calculating first position correction data by measuring a first mask alignment key pattern and the first alignment key pattern formed on the mask; Calculating second position correction data by measuring a second mask alignment key pattern formed on the mask and the second alignment key pattern; Correcting the position of the substrate and the mask by the first and second position correction data; And Exposing the photosensitive film. The method of claim 9, wherein the first alignment key pattern comprises a first alignment key disposed in a first direction and a second alignment key substantially perpendicular to the first direction. 12. The apparatus of claim 10, wherein the first mask alignment key pattern comprises a first mask alignment key disposed on both sides of the first alignment key and a second mask alignment key disposed on both sides of the second alignment key. The manufacturing method of the display apparatus made into. The method of claim 9, wherein the second alignment key patterns comprise a third alignment key disposed in a first direction and a fourth alignment key substantially perpendicular to the first direction. 13. The method of claim 12, wherein the second mask alignment key pattern comprises a third mask alignment key disposed on both sides of the third alignment key and a fourth mask alignment key disposed on both sides of the fourth alignment key. Method for manufacturing a display device. The method of claim 9, wherein the first and second alignment key patterns are alternately formed to have a cross shape. 10. The method of claim 9, wherein the positions of the first substrate and the mask are corrected by an average of the first and second data. 10. The method of claim 9, wherein the first thin film comprises a first metal thin film for forming a gate electrode and a gate signal line for manufacturing a thin film transistor, a semiconductor thin film, a second metal thin film for forming a source electrode and a data signal line and a drain electrode. And a first conductive transparent thin film which is transparent and conductive. The semiconductor device of claim 16, wherein the second thin film is any one selected from the group consisting of a semiconductor thin film, a second metal thin film for forming a source electrode and a data signal line and a drain electrode, a semiconductor thin film, and a transparent and conductive first conductive transparent thin film. Method for manufacturing a display device, characterized in that one. The method of claim 9, wherein the second thin film is any one selected from the group consisting of a third metal thin film, a color filter thin film, and a transparent and conductive second conductive thin film. The method of claim 18, wherein the second thin film is any one selected from the group consisting of a color filter thin film and a transparent and conductive second thin film. Patterning a first thin film formed on a substrate to form a first thin film pattern in a first region and a first alignment key pattern in a second region disposed around the first region; Patterning a second thin film formed on a substrate using the first alignment key pattern to form a second thin film pattern in the first region and a second alignment key pattern in the second region; Continuously forming a third thin film and a photosensitive film on the substrate; Aligning a mask with the substrate: Calculating first data by measuring a first mask alignment key pattern of the mask and the first alignment key pattern; Calculating second data by measuring a second mask alignment key pattern and the second alignment key pattern formed on the mask; Correcting positions of the substrate and the mask by the first and second data; And Exposing the photosensitive film. 21. The method of claim 20, wherein the first alignment key pattern comprises a first alignment key disposed in a first direction and a second alignment key substantially perpendicular to the first direction. 22. The apparatus of claim 21, wherein the first mask alignment key pattern comprises a first mask alignment key disposed on both sides of the first alignment key and a second mask alignment key disposed on both sides of the second alignment key. The manufacturing method of the display apparatus made into. 21. The method of claim 20, wherein the second alignment key patterns comprise a third alignment key disposed in a first direction and a fourth alignment key substantially perpendicular to the first direction. 24. The method of claim 23, wherein the second mask alignment key pattern comprises a third mask alignment key disposed on both sides of the third alignment key and a fourth mask alignment key disposed on both sides of the fourth alignment key. Method for manufacturing a display device. The method of claim 20, wherein the first and second alignment key patterns are alternately formed to have a cross shape. The method of claim 20, wherein the positions of the first substrate and the mask are corrected by an average of the first and second data. An optical supply device for supplying light; A mask body disposed on the path of the light, an active pattern disposed on a first region of the mask body, a first mask alignment pattern disposed on a second region positioned around the first region, and the first mask alignment A mask comprising a second mask alignment pattern disposed away from the pattern; A substrate plate disposed on the mask, the substrate plate including a first alignment pattern aligned with the first mask alignment pattern and a second alignment pattern aligned with the second mask alignment pattern; And And a measurement device for measuring the first and third mask alignment patterns and the first and second alignment patterns, respectively.