KR20030079265A - High efficient solar cell and fabrication method thereof - Google Patents
High efficient solar cell and fabrication method thereof Download PDFInfo
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- KR20030079265A KR20030079265A KR1020020018204A KR20020018204A KR20030079265A KR 20030079265 A KR20030079265 A KR 20030079265A KR 1020020018204 A KR1020020018204 A KR 1020020018204A KR 20020018204 A KR20020018204 A KR 20020018204A KR 20030079265 A KR20030079265 A KR 20030079265A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 238000000034 method Methods 0.000 title abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract 23
- 239000010408 film Substances 0.000 claims description 58
- 239000004020 conductor Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 abstract description 15
- 230000007547 defect Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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Abstract
Description
본 발명은 고효율 실리콘 태양전지에 관한 것으로, 더욱 상세하게는 실리콘 태양전지의 결함을 부동화(passivation)하는 부동화막의 성능이 우수한 고효율 태양전지 및 그 제조 방법에 관한 것이다.The present invention relates to a high efficiency silicon solar cell, and more particularly, to a high efficiency solar cell having excellent performance of a passivation film for passivating a defect of a silicon solar cell, and a manufacturing method thereof.
태양전지 상용제품의 대부분을 점유하고 있는 단결정, 다결정 및 다결정 박막을 포함한 결정질 실리콘 태양전지에서는 실리콘 표면과 내부의 결함들이 빛에 의해 생성된 전자 및 정공의 쌍의 재결합 센터로 작용하여 결과적으로 태양전지의 광전변환효율을 저하시키기 때문에, 결함을 효과적으로 부동화시킬 필요가 있다.In crystalline silicon solar cells, including monocrystalline, polycrystalline and polycrystalline thin films, which occupy most of the solar cell commercial products, the defects on the silicon surface and inside act as recombination centers of pairs of electrons and holes generated by light. In order to reduce the photoelectric conversion efficiency, the defects need to be immobilized effectively.
실리콘의 결함을 부동화하는 가장 대표적인 방법은 표면에 열산화막을 형성하는 것이다. 이 때 열산화막은 반사방지막의 역할도 할 수 있다. 일 예로서, 미국 특허 제4,927,770호, 제5,030,295호 및 제5,907,766호에 열산화막을 사용한 여러가지 반사방지막 및 부동화막이 개시되어 있다.The most representative method of passivating silicon defects is to form a thermal oxide film on the surface. At this time, the thermal oxide film may also serve as an antireflection film. As an example, US Pat. Nos. 4,927,770, 5,030,295, and 5,907,766 disclose various antireflection and passivation films using thermal oxide films.
상기 특허에서는 모두 실리콘 표면을 부동화하기 위해 열산화막을 형성한 후, 반사방지 및 자외선 차단 효과를 위해 각각 실리콘 질화막, 다결정 실리콘 박막, 산화 티타늄(TiO2) 박막을 사용하고 있다.All of the above patents use a thermally oxidized film to passivate a silicon surface, and then use a silicon nitride film, a polycrystalline silicon thin film, and a titanium oxide (TiO 2 ) thin film for antireflection and UV blocking effects, respectively.
최근에는 시장점유율이 확대되고 있는 다결정 실리콘 태양전지를 중심으로 실리콘 질화막의 사용이 늘고 있다. 이는, 실리콘 질화막을 플라즈마 화학기상증착(PECVD:plasma enhanced chemical vapor depositon)법으로 형성하면 굴절율을 1.9에서 2.3까지 조절이 가능하여 이상적인 반사방지막의 역할을 할 수 있을 뿐 아니라, 박막에 포함된 다량의 수소를 사용하여 다결정 실리콘 결정립 내부, 결정립 계면 및 표면의 결함을 부동화할 수 있기 때문이다. 그러나, 일반적으로 실리콘 질화막의 표면 부동화 효과는 열산화막 보다는 떨어지는 것으로 알려져있다.In recent years, the use of silicon nitride films is increasing, especially in polycrystalline silicon solar cells, which are expanding their market share. When the silicon nitride film is formed by plasma enhanced chemical vapor deposition (PECVD), the refractive index can be adjusted from 1.9 to 2.3, thereby serving as an ideal antireflection film, and a large amount of the film included in the thin film. This is because hydrogen can be used to passivate defects in polycrystalline silicon grains, grain interfaces, and surfaces. However, it is generally known that the surface passivation effect of silicon nitride film is lower than that of thermal oxide film.
한편, 일본 Sanyo사는 2000년도에 개최된 IEEE(미국 전기전자공학회) 태양광발전 국제회의에서, n형의 단결정 실리콘(c-Si) 기판 위에 10nm 미만 두께의 얇은 진성 비정질 실리콘 박막(thin intrinsic a-Si)을 형성하고, 그 위에 p형의 비정질 실리콘(a-Si) 층을 형성한 에이치아이티(HIT, 이하 HIT라 칭한다) 구조의 태양전지가 높은 부동화효과로 인해 광전변환효율이 높다는 내용의 논문을 발표한 바 있다. 이러한 HIT 구조의 기본적인 기능은 n형의 단결정 실리콘과 p형의 비정질 실리콘으로 구성된 이종(異種, hetero) pn 접합이다. 이종 pn 접합의 계면에는 많은 결함이 있어 빛에 의해 생성된 전자 및 정공쌍이 재결합된다. HIT 구조에서 이종 pn 접합의 사이에 있는 진성 비정질 실리콘 박막이 접합 계면의 결함을 부동화시킴으로써 광전변환효율이 향상되는 것이다.Meanwhile, Sanyo, Japan, at the IEEE International Conference on Electrical and Electronics Engineers (IEEE) held in 2000, said a thin intrinsic a- thin film of less than 10 nm thick on an n-type single crystal silicon (c-Si) substrate. A solar cell of HIT (hereinafter referred to as HIT) structure having Si) and a p-type amorphous silicon (a-Si) layer formed thereon has high photoelectric conversion efficiency due to high passivation effect. It was announced. The basic function of the HIT structure is a hetero pn junction composed of n-type single crystal silicon and p-type amorphous silicon. There are many defects at the interface of the heterogeneous pn junctions that recombine the electron and hole pairs generated by light. The intrinsic amorphous silicon thin film between the heterogeneous pn junctions in the HIT structure immobilizes defects at the junction interface, thereby improving photoelectric conversion efficiency.
그러나, 현재 상품화되어 있는 대부분의 태양전지는 p형의 결정질 실리콘 기판에 n형의 불순물을 확산시켜 pn 접합을 형성하는 동종(同種, homo) pn 접합 구조로 되어 있다.However, most commercially available solar cells have a homo pn junction structure in which n-type impurities are diffused onto a p-type crystalline silicon substrate to form a pn junction.
본 발명의 목적은 동종 pn 접합 구조의 결정질 실리콘 태양전지에서 표면 결함의 부동화 효과가 우수한 새로운 반사방지막 구조를 제안하는 것이다.An object of the present invention is to propose a novel anti-reflection film structure having excellent passivation effect of surface defects in crystalline silicon solar cells of homogeneous pn junction structure.
도 1은 본 발명의 제1실시예에 따른 고효율 태양전지의 구조를 도시한 단면도이다.1 is a cross-sectional view showing the structure of a high efficiency solar cell according to a first embodiment of the present invention.
도 2는 본 발명의 제2실시예에 따른 고효율 태양전지의 구조를 도시한 단면도이다.2 is a cross-sectional view showing the structure of a high efficiency solar cell according to a second embodiment of the present invention.
도 3은 본 발명의 제3실시예에 따른 고효율 태양전지의 구조를 도시한 단면도이다.3 is a cross-sectional view illustrating a structure of a high efficiency solar cell according to a third embodiment of the present invention.
도 4는 본 발명에 따라 두께 15 nm인 비결정질 실리콘 박막 위에 실리콘 질화막을 형성한 경우, 종래 실리콘 질화막만을 부동화막을 사용한 겅우, 및 부동화막이 없는 실리콘 웨이퍼의 경우에 대해 소수 캐리어의 수명을 측정한 결과를 도시한 그래프이다.FIG. 4 shows the results of measuring the lifespan of minority carriers in the case where a silicon nitride film is formed on an amorphous silicon thin film having a thickness of 15 nm according to the present invention, in the case of using a conventional silicon nitride film using only a passivation film and a silicon wafer without a passivation film. It is a graph shown.
상기한 바와 같은 목적을 달성하기 위하여, 본 발명에서는 태양전지의 전면 및 후면 중의 적어도 하나 이상에 비결정질 실리콘 박막과 실리콘 질화막을 순차적으로 적층한다. 실리콘 질화막은 비결정질 실리콘 박막과 함께 표면결함을 부동화 시킬 뿐만 아니라 반사방지막의 일부로 작용한다. 이 때, 비결정질 실리콘 박막은 1 내지 20 nm 두께인 것이 바람직하며, 실리콘 질화막의 굴절률은 1.9 내지 2.3인 것이 바람직하다.In order to achieve the above object, in the present invention, an amorphous silicon thin film and a silicon nitride film are sequentially stacked on at least one of the front and rear surfaces of the solar cell. The silicon nitride film acts as part of the antireflection film as well as passivating the surface defects together with the amorphous silicon thin film. In this case, the amorphous silicon thin film is preferably 1 to 20 nm thick, and the refractive index of the silicon nitride film is preferably 1.9 to 2.3.
또한, 비결정질 실리콘 박막과 실리콘 질화막은 일반적인 PECVD법을 사용하여 300℃ 정도의 비교적 낮은 온도에서 연속적으로 증착하는 것이 바람직하다.In addition, it is preferable that the amorphous silicon thin film and the silicon nitride film are continuously deposited at a relatively low temperature of about 300 ° C. using a general PECVD method.
이하, 본 발명에 따른 고효율 태양전지 및 그 제조 방법에 대해 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, a high efficiency solar cell and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명의 제1실시예에 따른 고효율 태양전지의 구조를 도시한 단면도로서, p형 실리콘 기판(1)의 전면에 n형 에미터 층(2)이 형성된 일반적인 실리콘 태양전지에 본 발명을 적용한 일례이다. 즉, 실리콘 질화막(4)의 표면 부동화 효과를 혁신적으로 향상시키기 위해 n형 에미터 층(2) 상에 비결정질 실리콘 박막(3)을 형성한 후, 비결정질 실리콘 박막(3) 상에 실리콘 질화막(4)을 형성한다. 또한, 실리콘 질화막(4)의 표면으로부터 에미터 층(2)의 상면이 노출될 때까지 다수개의 홈을 형성하고 홈 내부를 도전성 물질로 충진함으로써 n형 에미터 층(2)과 전기적으로 연결되는 전면 전극(5)이 형성되어 있고, p형 실리콘 기판(1)의 후면 상에는 후면 전극(6)이 형성되어 있다.1 is a cross-sectional view illustrating a structure of a high efficiency solar cell according to a first embodiment of the present invention, in which a n-type emitter layer 2 is formed on a front surface of a p-type silicon substrate 1. This is an example of applying. That is, after forming the amorphous silicon thin film 3 on the n-type emitter layer 2 in order to innovatively improve the surface passivation effect of the silicon nitride film 4, the silicon nitride film 4 on the amorphous silicon thin film 3 ). In addition, a plurality of grooves are formed from the surface of the silicon nitride film 4 until the top surface of the emitter layer 2 is exposed and electrically connected to the n-type emitter layer 2 by filling the grooves with a conductive material. The front electrode 5 is formed, and the back electrode 6 is formed on the back surface of the p-type silicon substrate 1.
비결정질 실리콘 박막(3)과 실리콘 질화막(4)은 PECVD법을 이용하여 연속적으로 제조할 수 있다. PECVD법에 의한 제조조건의 일례를 표 1에 나타내었다.The amorphous silicon thin film 3 and the silicon nitride film 4 can be produced continuously by using the PECVD method. Table 1 shows an example of the manufacturing conditions by PECVD.
표 1에 나타난 바와 같은 조건으로 비결정질 실리콘 박막(3)을 형성할 때, H2유량과 RF 전력을 증가시키면 미세결정질 실리콘으로 제조할 수도 있다. 이와 같은 비결정질 실리콘 박막(3)은 실리콘 질화막(4)과 n형 에미터 층(2) 사이에서 완충역할을 할 수 있다.When forming the amorphous silicon thin film 3 under the conditions as shown in Table 1, by increasing the H 2 flow rate and RF power may be made of microcrystalline silicon. Such an amorphous silicon thin film 3 can act as a buffer between the silicon nitride film 4 and the n-type emitter layer 2.
실리콘 질화막(4)은 반사방지막의 일부로 작용하기 때문에 굴절율과 두께 균일도의 조절이 중요하다. 굴절율과 두께 균일도는 RF전력, 반응실 압력, 가스유량으로 조절할 수 있다. 따라서, 실리콘 질화막의 제조조건은 원하는 굴절율과 두께 균일도를 얻기 위해 최적화되어야 한다. 실리콘 질화막의 굴절율은 반사방지막의 구조에 따라 1.9 내지 2.3의 값이 요구되며, 두께는 균일할수록 바람직하다.Since the silicon nitride film 4 functions as part of the antireflection film, it is important to control the refractive index and the thickness uniformity. Refractive index and thickness uniformity can be controlled by RF power, reaction chamber pressure and gas flow rate. Therefore, the manufacturing conditions of the silicon nitride film should be optimized to obtain the desired refractive index and thickness uniformity. The refractive index of the silicon nitride film is required to have a value of 1.9 to 2.3 depending on the structure of the antireflection film, and the more uniform the thickness, the better.
일반적인 평행평판형 PECVD 시스템을 사용하여 비결정질 실리콘 박막 및 실리콘 질화막을 제조하는 경우 플라즈마를 구성하는 양이온이 기판표면을 두드려 기판에 결함이 발행하는 현상은 불가피하다. 그러나, 그 정도는 RF 전력과 반응실 압력 등의 조절에 의해 최소화할 수 있다. 따라서, 실리콘 질화막(4)의 제조조건은 반사방지막 용도로 최적화하고, 비결정질 실리콘 박막(3)의 제조조건은 실리콘 표면의 결함을 최소화하도록 최적화하면 실리콘 기판 표면의 결함발생을 최소화하면서 반사방지막을 제조할 수 있다. 그 결과 실리콘 질화막(4)의 실리콘 표면 부동화효과를 혁신적으로 향상시킬 수 있다.When the amorphous silicon thin film and the silicon nitride film are manufactured by using a general parallel plate type PECVD system, it is unavoidable that a cation constituting the plasma strikes the substrate surface and causes defects on the substrate. However, the degree can be minimized by adjusting RF power and reaction chamber pressure. Therefore, if the manufacturing conditions of the silicon nitride film 4 is optimized for the anti-reflection film, and the manufacturing conditions of the amorphous silicon thin film 3 are optimized to minimize the defects on the silicon surface, the anti-reflection film is produced while minimizing the occurrence of defects on the surface of the silicon substrate. can do. As a result, the silicon surface passivation effect of the silicon nitride film 4 can be improved innovatively.
다만, 비결정질 실리콘 박막(3)은 태양전지로 들어가는 빛의 일부를 흡수하여 태양전지의 효율을 저하시킬 수 있으므로 두께는 가능한 한 얇은 것이 바람직하다. 비결정질 실리콘 박막(3)의 두께를 20 nm 이하로 하면 광흡수에 의한 효율저하의 우려 없이 실리콘 표면의 부동화 효과를 극대화할 수 있다. 또한, 비결정질 실리콘 박막은 그 효과를 발휘하기 위해서는 1 nm 이상인 것이 바람직하다.However, since the amorphous silicon thin film 3 may absorb a part of light entering the solar cell and may lower the efficiency of the solar cell, the thickness is preferably as thin as possible. When the thickness of the amorphous silicon thin film 3 is set to 20 nm or less, the passivation effect of the silicon surface can be maximized without fear of deterioration in efficiency due to light absorption. In addition, in order to exert the effect, the amorphous silicon thin film is preferably 1 nm or more.
도 2는 본 발명의 제2실시예에 따른 고효율 태양전지의 구조를 도시한 단면도이다. 도 2에 도시된 태양전지는 실리콘 기판(10)의 후면에 n형 에미터(11)와 p형 베이스(12)를 모두 형성하고, n형 에미터(11) 및 p형 베이스(12)와 각각 전기적으로 연결되는 에미터 전극(15)과 베이스 전극(16)을 형성한 후면접합형 태양전지이며, 실리콘 기판(10)의 전면에 비결정질 실리콘 박막(13)과 실리콘 질화막(14)을 차례로 적층되어 있다.2 is a cross-sectional view showing the structure of a high efficiency solar cell according to a second embodiment of the present invention. The solar cell illustrated in FIG. 2 forms both the n-type emitter 11 and the p-type base 12 on the back surface of the silicon substrate 10, and the n-type emitter 11 and the p-type base 12. A back-junction solar cell having an emitter electrode 15 and a base electrode 16 electrically connected to each other. The amorphous silicon thin film 13 and the silicon nitride film 14 are sequentially stacked on the front surface of the silicon substrate 10. It is.
이와 같은 후면접합형 태양전지는 전면에 전극이 형성되어 있지 않으므로 특히 집광형 태양전지에 유리한 구조이다. 비결정질 실리콘 박막(13)과 실리콘 질화막(14)의 제조방법은 도 1 구조의 제1실시예와 동일하다. 후면접합형 태양전지에서는 실리콘 기판(10) 전면의 부동화가 더욱 중요하므로 본 발명에 의한 효과가 더욱 현저할 것으로 기대된다.Such a back junction solar cell is particularly advantageous for a condensing solar cell because no electrode is formed on the front surface thereof. The manufacturing method of the amorphous silicon thin film 13 and the silicon nitride film 14 is the same as that of the first embodiment of the structure of FIG. In the back-junction solar cell, since passivation of the front surface of the silicon substrate 10 is more important, the effect of the present invention is expected to be more remarkable.
도 3은 본 발명의 제3실시예에 따른 태양전지의 구조를 도시한 단면도로서, 여기에 도시된 구조는 p형 실리콘 기판(20)의 전면에 n형 에미터 층(21)이 형성된 실리콘 태양전지의 전면 및 후면에 각각 비결정질 실리콘 박막(22a, 22b)과 실리콘질화막(23a, 23b)이 적층된 구조이다. 즉, n형 에미터 층(21)의 전면에 비결정질 실리콘 박막(22a)과 실리콘 질화막(23a)이 차례로 형성되어 있고, p형 실리콘 기판(20)의 후면에 비결정 실리콘 박막(22b)과 실리콘 질화막(23b)이 차례로 형성되어 있다. 또한, 태양전지의 전면에는 실리콘 질화막(23a)의 표면으로부터 n형 에미터 층(21)의 상면이 노출될 때까지 다수개의 홈을 형성하고 홈 내부를 도전성 물질로 충진함으로써 n형 에미터 층(21)과 전기적으로 연결되는 전면 전극(24)이 형성되어 있고, 태양전지의 후면에는 실리콘 질화막(23b)의 표면으로부터 p형 실리콘 기판(20)의 후면이 노출될 때까지 다수개의 홈을 형성하고 홈 내부를 도전성 물질로 충진함으로써 p형 실리콘 기판(20)과 전기적으로 연결되는 후면 전극(25)이 형성되어 있다.3 is a cross-sectional view showing a structure of a solar cell according to a third embodiment of the present invention, in which the structure shown here is a silicon solar cell in which an n-type emitter layer 21 is formed on a front surface of a p-type silicon substrate 20. Amorphous silicon thin films 22a and 22b and silicon nitride films 23a and 23b are stacked on the front and rear surfaces of the battery, respectively. That is, the amorphous silicon thin film 22a and the silicon nitride film 23a are sequentially formed on the entire surface of the n-type emitter layer 21, and the amorphous silicon thin film 22b and the silicon nitride film are formed on the rear surface of the p-type silicon substrate 20. 23b is formed one by one. In addition, a plurality of grooves are formed on the front surface of the solar cell until the top surface of the n-type emitter layer 21 is exposed from the surface of the silicon nitride film 23a, and the inside of the groove is filled with a conductive material to form the n-type emitter layer ( A front electrode 24 electrically connected to 21 is formed, and a plurality of grooves are formed on the rear surface of the solar cell until the rear surface of the p-type silicon substrate 20 is exposed from the surface of the silicon nitride film 23b. A back electrode 25 electrically connected to the p-type silicon substrate 20 is formed by filling the groove with a conductive material.
이 때, 실리콘 기판(20)의 품질이 우수하거나 두께가 얇은 경우 후면에서의 부동화는 태양전지의 성능에 큰 영향을 줄 수 있으며, 본 발명을 적용함으로써 태양전지 변환효율의 향상을 기대할 수 있다.In this case, when the quality of the silicon substrate 20 is excellent or the thickness is thin, the passivation at the rear surface may have a great influence on the performance of the solar cell, and the improvement of the solar cell conversion efficiency may be expected by applying the present invention.
도 4는 본 발명에 따라 두께 15 nm인 비결정질 실리콘 박막 위에 실리콘 질화막을 형성한 구조에서 소수 캐리어의 수명(lifetime)을 측정한 결과로서, 종래 실리콘 질화막만을 부동화막으로 사용한 겅우와, 부동화막이 없는 실리콘 웨이퍼의 경우에 대한 소수 캐리어 수명 측정 결과와 비교하여 도시한 그래프이다. 이 때 소수 캐리어의 수명은 태양전지의 성능을 결정하는 결정적인 인자이다.4 is a result of measuring the lifetime of a minority carrier in a structure in which a silicon nitride film is formed on an amorphous silicon thin film having a thickness of 15 nm according to the present invention. It is a graph compared with the minority carrier lifetime measurement result for the case of a wafer. At this time, the lifetime of the minority carrier is a decisive factor for determining the performance of the solar cell.
도 4에 도시된 바와 같이, 본 발명에 따라 비결정질 실리콘 박막과 실리콘 질화막을 형성하면, 종래 실리콘 질화막만을 형성한 것에 비해 소수 캐리어의 수명의 2배 정도 향상됨을 알 수 있다.As shown in FIG. 4, it can be seen that when the amorphous silicon thin film and the silicon nitride film are formed according to the present invention, the lifespan of the minority carriers is improved by about twice the life of the conventional silicon nitride film.
상기한 바와 같이, 본 발명에 따라 비결정질 실리콘 박막과 실리콘 질화막을 차례로 증착하여 부동화막으로 사용하면, 종래의 열산화막 또는 실리콘 질화막 단독에 의한 것보다 부동화 효과가 대폭 향상되어 태양전지의 성능이 향상되는 효과가 있다.As described above, according to the present invention, when the amorphous silicon thin film and the silicon nitride film are sequentially deposited and used as a passivation film, the passivation effect is greatly improved than that of the conventional thermal oxide film or silicon nitride film alone, thereby improving the performance of the solar cell. It works.
또한, 본 발명에서는 비결정질 실리콘 박막과 실리콘 질화막을 형성할 때 기판온도가 300℃ 정도이므로, 종래 1000℃ 정도에 비하여 제조공정 온도를 크게 낮추고, 이로 인해 제조 원가가 낮아지는 효과가 있다.In addition, in the present invention, since the substrate temperature is about 300 ° C. when forming the amorphous silicon thin film and the silicon nitride film, the manufacturing process temperature is greatly lowered compared to the conventional 1000 ° C., thereby lowering the manufacturing cost.
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