KR200266071Y1 - Chemical vapor deposition apparatus using plasma - Google Patents

Abstract

The present invention relates to a chemical vapor deposition apparatus using plasma in the semiconductor manufacturing equipment. The chemical vapor deposition apparatus of the present invention is composed of a process chamber, a boat, and a shower head. The shower head includes a plasma generating unit for making the process gas into a plasma state. The plasma generator is installed vertically to correspond to the boat, and the plasma generator is one of a plate, a cylinder, and a coil.

Description

Chemical vapor deposition apparatus using plasma {CHEMICAL VAPOR DEPOSITION APPARATUS USING PLASMA}

The present invention relates to a chemical vapor deposition apparatus for forming a thin film on the surface of a semiconductor wafer.

In general, a semiconductor device, a flat panel display (PDP) device, etc., go through various manufacturing processes, and among them, a chemical vapor deposition (CVD) method is mainly used to deposit a thin film required on a substrate such as a wafer. Is used. An apparatus for performing such chemical vapor deposition includes a batch type processing a plurality of substrates simultaneously and a single sheet processing apparatus processing a single substrate.

On the other hand, an apparatus for sequentially forming two kinds of atomic layer thin films on a substrate using chemical vapor deposition is an atomic layer thin film deposition apparatus, which has the same configuration as the chemical vapor deposition apparatus of the batch method.

1 is a view schematically showing a conventional chemical vapor deposition apparatus.

Referring to FIG. 1, the chemical vapor deposition apparatus 10 includes a process chamber 20, a boat 40, and a gas inlet 50.

The process chamber 20 is composed of an outer tube 22 and an inner tube 24, and the boat 40 is installed in the process chamber 20. The gas inlet 50 supplies a process gas into the process chamber 20. In addition, the process chamber 20 includes an exhaust port 60 through which the process gas having completed the process exits on a sidewall corresponding to the gas inlet 50. The inner tube 24 serves to smoothly flow the supplied process gas.

The process gas supplied from the gas inlet 50 forms a desired film on the surface of the wafers loaded on the boat 40. The gas introduction port 50 is provided with a plasma generation unit 70 to which energy for applying a process gas supplied into the process chamber 20 into a plasma state is applied. The energy is a radio frequency (RF) power source.

2 is a view for explaining a process gas excited by the plasma generating unit.

Referring to FIG. 2, the process gas supplied through the gas inlet 50 is excited by the plasma generator 70. As the process gas is excited, radicals and ions are generated. The radicals contributing to the deposition are so short that their life time is so short that they are recombined again.

In the conventional chemical vapor deposition apparatus, a plasma generating unit is provided at the gas introduction port located outside the process chamber. Thus, the process gas excited by the plasma generator is supplied into the process chamber. As a result, the time taken to reach the wafers through the space of the process chamber becomes long, which causes a problem that the excited process gas is recombined before reaching the wafers of the boat. As a result, the deposition time is long, and the uniformity of the wafer is deteriorated.

In addition, since the distance between the wafers positioned below and below the boat is different, the film thickness deposited by the excited process gas is different.

An object of the present invention is to provide a chemical vapor deposition apparatus that can reduce the deposition time.

Another object of the present invention is to provide a chemical vapor deposition apparatus having uniformity in deposition and capable of maintaining a constant film thickness between wafers.

1 is a view schematically showing a conventional chemical vapor deposition apparatus.

2 is a view for explaining a process gas excited by the plasma generating unit.

3 is a view schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention.

4 is a plan view of the chemical vapor deposition apparatus of FIG.

5 is a cross-sectional view taken along the line I-I of FIG. 3 to show a shower head of the present invention.

6 (a) to 6 (c) are views showing a modified example of the plasma generating unit made of a plate.

7 (a) and 7 (b) are diagrams illustrating various modified examples of the plasma generating unit.

* Explanation of symbols for the main parts of the drawings

10,100: chemical vapor deposition apparatus

20,200: process chamber 22: outer tube

24: inner tube 40300: boat

50,600 gas inlet 60,700 exhaust port

400: shower head 410: gas introduction space

420: gas injection port 70,500: plasma generating unit

620: first gas inlet 610: second gas inlet

630: first space 640: second space

800: energy source

According to a feature of the present invention for achieving the above object, a chemical vapor deposition apparatus for forming a thin film on the surface of a semiconductor wafer is located in the process chamber and the process chamber, a boat on which a plurality of wafers are stacked and a boat mounted on the boat It consists of a shower head for injecting process gas into the wafers. In addition, it is installed in the shower head, and includes a plasma generating unit for making the process gas into a plasma state.

In the present invention, the shower head is installed inside the process chamber and forms a gas introduction space together with sidewalls of the process chamber, and the plasma generator is installed in the gas introduction space.

In this invention, it further comprises a gas inlet for supplying a process gas to the gas introduction space of the shower head.

In the present invention, the gas introduction space has a first space and a second space to which different process gases are supplied, respectively, and the plasma generation unit is provided in the second space. The process chamber further includes a first gas inlet and a second gas inlet for supplying process gases to the first space and the second space, respectively.

In the present invention, the shower head is provided with a plurality of gas injection holes for injecting the process gas supplied to the gas introduction space into the interior space of the process chamber, the gas injection holes to vary the amount of gas injected In order to increase the diameter sequentially from the gas injection port close to the gas inlet.

In the present invention, the plasma generating unit is made of any one of a plate, a cylinder, and a coil, and the plasma generating unit is vertically installed to correspond to the boat. In addition, the plasma generating unit may be formed in plural to pass the process gas between the plasma generating units, and portions corresponding to the gas injection holes may be removed so as not to disturb the flow of the process gas injected through the gas injection holes.

In this invention, the energy is a radio frequency (RF) power source, the process chamber is a vertical tube of the dome-shaped top, the chemical vapor deposition apparatus is an atomic layer film deposition apparatus. The process chamber further includes an exhaust port through which the gas, which has been processed, exits.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 3 to 7. In addition, the same reference numerals are denoted with respect to the components that perform the same function in the drawings.

3 is a view schematically showing a chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 4 is a plan view of the chemical vapor deposition apparatus of Figure 3, Figure 5 is a view showing a shower head of the present invention Figure 3 Sectional view taken along line II of the

3 to 5, the chemical vapor deposition apparatus 100 for forming a thin film on a semiconductor wafer surface is a process chamber 200, a boat 300, a shower head 400, and a plasma generator 500. It is composed.

The process chamber 200 is a vertical tube having an upper portion of a dome shape, and the boat 300 in which a plurality of wafers are loaded is disposed in the process chamber 200. The shower head 400 is installed inside the process chamber 200 to correspond to the boat 300 and forms a gas introduction space 410 together with sidewalls of the process chamber 200. The plasma generator 500 is installed in the gas introduction space 410.

The process chamber 200 includes a gas inlet 600 for supplying a process gas to the gas introduction space 410, and has a process gas completed on a sidewall corresponding to the gas inlet 600. An exit port 700 is provided.

As illustrated in FIG. 5, the shower head 400 includes a plurality of gas injection holes 420 for injecting the process gas supplied into the gas introduction space 410 into the process chamber 200. The gas injection holes 420 are sequentially increased in diameter from the gas injection holes 420 close to the gas introduction holes 600 in order to change the amount of gas injected. This is because the pressure of the process gas injected from the gas inlet 420 close to the gas inlet 600 is greater than the pressure of the process gas injected from the gas inlet 420 located at a position far from the gas inlet 600. Because of their high, they are formed with different diameters. As a result, the amount of process gas injected into the upper and lower portions of the boat can be kept constant. In addition, by providing the shower head corresponding to the boat in the process chamber, it is possible to collectively inject the process gas to the wafers from the adjacent position.

The plasma generator 500 is vertically installed in the gas introduction space 410 to correspond to the boat 300. In addition, RF power from an energy source is applied to the plasma generator 500.

The process gas supplied to the gas introduction space 410 through the gas inlet 600 is excited by the plasma generator 500, and the excited process gas is the boat 300 of the process chamber 200. Is injected into the wafers loaded. The process gas after the process is completed is exhausted through an exhaust port 700 provided on the opposite side to the gas inlet 600.

By installing the plasma generating unit 500 inside the process chamber 200 to be close to the boat 300 as described above, the process gas supplied to the gas introduction space 410 is excited and at the same time the boat 300 ) Can be injected into the entire wafers. As a result, the film thickness between the entire wafers is kept constant, and the uniformity of the deposited film can be improved.

As shown in FIG. 4, the gas introduction space 410 includes a first space 630 and a second space 640 so that different process gases may be supplied.

The plasma generator 500 is provided in the second space 640 to make the process gas into a plasma state. In addition, a first gas inlet 620 and a second gas inlet 610 are provided to supply process gases to the first space 630 and the second space 640, respectively. The first space 630 and the second space 640 are provided with gas injection holes 620 and 610, respectively, and the gas injection holes are gas injection holes close to the gas inlets as shown in FIG. 5. From then on, the diameter increases. The gas introduction space 410 is divided into the first space 630 and the second space 640 may be a preferred form for the atomic layer thin film deposition apparatus that is one of the chemical vapor deposition apparatus. That is, in the atomic layer thin film deposition apparatus for sequentially depositing two desired thin films on a wafer, first, the first process gas is injected into the process chamber 200 from the first space 630, and then The first process gas is discharged to the exhaust port 700. Then, a second process gas is injected into the process chamber 200 from the second space 640. By having these two gas introduction spaces, a process can be performed without mixing process gas.

6 is a view showing a plasma generation unit consisting of a plate.

The plasma generator 500 is vertically installed in the second space 640, which is the gas introduction space 410, to correspond to the boat 300. The plasma generating unit 500 is provided in plural numbers, and a process gas flows between both plates. Accordingly, in order to inject the process gas into the gas injection holes 420 formed in the shower head 400, the plasma generation unit 500 may include the gas injection holes 420 as shown in FIG. 6A. It is installed with a height to the starting position.

When the plasma generator 500 is installed to correspond to all of the wafers loaded on the boat 300, the gas injection holes 420 formed in the shower head 400 are shown in FIG. 6 (b). Space must be secured. To do so, the plasma generator 500 at a position corresponding to the gas injection holes 420 should be removed. By doing so, the excited process gas can be injected directly through the entire wafer, and it is possible to prevent the difference in film thickness due to deposition caused by the distance between the wafers loaded on the top and the bottom of the boat. As shown in FIG. 6C, the plasma generator 500 may be installed to avoid the gas injection holes 420 in the circumferential direction of the process chamber 200 in the form of a vertical tube.

7 is a view showing a modification of the plasma generating unit according to the present invention.

The plasma generator 500 of FIG. 7A is formed of a cylinder instead of a plate (shown in FIG. 6). In addition, the plasma generator 500 of FIG. 7B is formed of a coil. The plasma generating unit 500 including the cylinder and the coil may be variously disposed in a range that does not prevent the process gas from being injected from the gas injection holes. That is, it may be arranged in the radial direction of the process chamber as shown in Figure 6 (b), it may be arranged in the circumferential direction of the process chamber as shown in Figure 6 (c).

It will be apparent to those skilled in the art that various modifications and variations to the apparatus of the present invention are possible without departing from the scope and spirit of the present invention.

According to the present invention, by providing a plasma generating portion in the process chamber, the excited process gas is not recombined before reaching the wafer. As a result, the deposition time can be shortened, and the uniformity of the wiper surface according to the deposition can be improved.

In addition, since the plasma generating unit provided in the shower head corresponds to all of the wafers loaded on the boat, the film thickness by deposition between the wafers mounted on the upper and lower portions of the boat can be made constant.

Claims (14)

In a chemical vapor deposition apparatus for forming a thin film on a semiconductor wafer surface: Process chambers; A boat located in the process chamber and having a plurality of wafers loaded thereon; And A shower head for injecting process gas into the wafers loaded in the boat; And a plasma generating unit to which energy for turning the process gas into a plasma is applied and installed in the shower head. The method of claim 1, The shower head is installed in the process chamber, the gaseous vapor deposition apparatus to form a gas introduction space with the side wall of the process chamber, wherein the plasma generating unit is characterized in that the plasma generation unit is installed. The method of claim 2, Chemical vapor deposition apparatus further comprises a gas inlet for supplying a process gas to the gas introduction space of the shower head. The method of claim 2, The gas introduction space has a first space and a second space to which different process gases are supplied, respectively, And the plasma generating unit is installed in the second space. The method of claim 4, wherein And a first gas inlet and a second gas inlet for supplying process gas to the first space and the second space, respectively. The method according to claim 3 or 5, The shower head is provided with a plurality of gas injection holes for injecting the process gas supplied to the gas introduction space into the interior space of the process chamber; The gas injection holes are chemical vapor deposition apparatus characterized in that the diameter is sequentially increased from the gas injection port close to the gas inlet in order to vary the amount of gas injected. The method of claim 6, The plasma generating unit is a chemical vapor deposition apparatus, characterized in that made of any one of a plate, a cylinder and a coil. The method of claim 7, wherein And the plasma generator is installed vertically to correspond to the boat. The method of claim 8, And a plurality of plasma generating units configured to pass the process gas between the plasma generating units. The method of claim 9, The plasma generating unit is a chemical vapor deposition apparatus, characterized in that the portion corresponding to the gas injection port is removed so as not to disturb the flow of the process gas injected through the gas injection holes. The method of claim 1, The energy vapor deposition apparatus, characterized in that the RF (radio frequency) power source. The method of claim 1, Chemical vapor deposition apparatus further comprises an exhaust port for exiting the gas is completed. The method of claim 1, The process chamber is a chemical vapor deposition apparatus, characterized in that the upper part is a vertical tube made of a domed shape. The method of claim 1, The chemical vapor deposition apparatus is a chemical vapor deposition apparatus, characterized in that the atomic layer film deposition apparatus.