KR20020057507A - Method of improving adhesion between polymer and metal - Google Patents
Method of improving adhesion between polymer and metal Download PDFInfo
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- KR20020057507A KR20020057507A KR1020010000571A KR20010000571A KR20020057507A KR 20020057507 A KR20020057507 A KR 20020057507A KR 1020010000571 A KR1020010000571 A KR 1020010000571A KR 20010000571 A KR20010000571 A KR 20010000571A KR 20020057507 A KR20020057507 A KR 20020057507A
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- South Korea
- Prior art keywords
- polymer
- metal film
- metal
- adhesion
- reactive gas
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Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 77
- 239000002184 metal Substances 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 17
- 238000007772 electroless plating Methods 0.000 claims abstract description 12
- 238000009713 electroplating Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 20
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 16
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 16
- 239000004698 Polyethylene Substances 0.000 claims description 15
- 229920000573 polyethylene Polymers 0.000 claims description 15
- 239000004743 Polypropylene Substances 0.000 claims description 13
- -1 polyethylene Polymers 0.000 claims description 13
- 229920001155 polypropylene Polymers 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000004381 surface treatment Methods 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims 1
- 238000007664 blowing Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000008859 change Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 239000010949 copper Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 125000000524 functional group Chemical group 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 230000003993 interaction Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012668 chain scission Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- QLUMLEDLZDMGDW-UHFFFAOYSA-N sodium;1h-naphthalen-1-ide Chemical compound [Na+].[C-]1=CC=CC2=CC=CC=C21 QLUMLEDLZDMGDW-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
- C23C18/204—Radiation, e.g. UV, laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
- C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
Abstract
본 발명은 고분자와 금속의 접착력 향상 방법에 관한 것으로, 이온 보조 반응법으로 고분자 표면에 친수성기를 부여하고 무전해 도금 또는 전해도금을 수행하여 고분자와 금속막의 접착력을 증진시키거나 도금 자체가 잘 되지않는 고분자에 쉽게 금속막이 형성되도록 한다. 구체적으로는 진공챔버 안에서 반응성 가스를 주입하며 에너지를 갖는 이온빔을 고분자에 조사하여 상기 고분자 표면의 결합을 일부 파괴하고, 진공챔버에 반응성 가스를 주입하여 상기 결합이 파괴된 고분자 표면의 원자들을 반응성 가스와 반응하게 함으로써 상기 고분자 표면을 친수성으로 변화시키고, 친수성으로 변화된 상기 고분자 표면에 금속막을 증착시키는 것으로 이루어지는 고분자와 금속의 접착력 향상방법을 제공한다. 본 발명에 의하면, 고분자와 금속막의 접착력을 증진시키거나 도금 자체가 잘 되지않는 고분자에 쉽게 금속막이 형성되도록 하며, 특히 이온빔으로 고분자 표면을 개질시킴으로써 금속 배양층 없이도 고분자 위에 도금이 가능하며, 따라서 도금 공정을 단축시킬 수 있 수 있다.The present invention relates to a method for improving adhesion between a polymer and a metal. The ion assist reaction method provides a hydrophilic group to the surface of the polymer and performs electroless plating or electroplating, thereby improving adhesion between the polymer and the metal film or plating itself. Metal film is easily formed on the polymer. Specifically, a reactive gas is injected into the vacuum chamber to irradiate the polymer with an ion beam having energy to partially destroy the bonds of the polymer surface, and a reactive gas is injected into the vacuum chamber to atomize the atoms on the polymer surface where the bond is broken. By reacting with the polymer to change the surface of the polymer to hydrophilic, and to provide a method for improving the adhesion between the polymer and the metal consisting of depositing a metal film on the surface of the polymer changed to hydrophilic. According to the present invention, the metal film is easily formed on the polymer which promotes adhesion between the polymer and the metal film or the plating itself is difficult, and in particular, by modifying the surface of the polymer with an ion beam, plating is possible on the polymer without a metal culture layer. The process can be shortened.
Description
본 발명은 고분자와 금속의 접착력 향상 방법에 관한 것이다.The present invention relates to a method for improving adhesion between a polymer and a metal.
무전해도금 및 전해도금법은 넓은 면적으로 쉽게 금속 후막을 얻을 수 있는 방법으로서 각종 전기 부품의 전극 및 인쇄 회로 기판의 배선 형성에 주로 응용되고 있다. 무전해도금이나 전해도금으로 고분자 위에 금속막을 형성하는 경우 도금 자체가 잘 이루어지지 않거나 금속막이 형성되었더라도 고분자와 금속은 일반적으로 접착력이 약하다. 이를 해결하기 위하여 여러 가지 고분자 표면 처리 방법이 제시되어 왔으며, 그 중 대표적인 것으로는 sodium-naphthalenide로 표면을 화학처리하거나 UV, X-ray radiation 또는 RF plasma 등으로 표면 처리한 후 SnCl2또는 PdCl2의 용액에 침전시켜 얇은 Pd 또는 Sn 막을 형성하여 금속 배양층을 만든 후 그 위에 금속막을 무전해 도금 및 전해 도금을 하는 방법이 있다.Electroless plating and electroplating are a method of easily obtaining a metal thick film with a large area, and are mainly applied to wiring of electrodes and printed circuit boards of various electrical components. In the case of forming a metal film on the polymer by electroless plating or electroplating, the adhesion between the polymer and the metal is generally weak even if the plating itself is not well made or the metal film is formed. Has a number of polymeric surface treatment method is proposed to solve this problem, as a representative of which after the chemical treatment of the surface with sodium-naphthalenide, or surface treated with UV, X-ray radiation or the RF plasma, such as SnCl 2 or PdCl 2 After precipitation in the solution to form a thin Pd or Sn film to form a metal culture layer there is a method of electroless plating and electroplating the metal film thereon.
그러나 이러한 무전해 또는 전해 도금을 위한 표면 처리 방법은 여러 단계의 표면 처리 공정이 수반되어야 하며 화학적 수용액등을 사용함으로 폐수 처리를 위한 부대시설을 요구하여 공정 비용이 많이 드는 단점이 있다.However, such a surface treatment method for electroless or electrolytic plating has to be accompanied by several stages of surface treatment processes, and requires an additional facility for wastewater treatment by using a chemical aqueous solution.
따라서 본 발명은 고분자와 금속막의 접착력을 증진시키거나 도금 자체가 잘 되지않는 고분자에 금속 배양층 없이 쉽게 금속막이 형성되도록 하는데 목적이 있다.Therefore, an object of the present invention is to improve the adhesion between the polymer and the metal film or to easily form a metal film without a metal culture layer on the polymer that is not well plating itself.
또한, 본 발명은 무전해도금이나 전해도금으로 고분자 위에 금속막을 형성하는 경우 복잡한 표면 처리과정을 단순화하여 경제적인 제조공정을 제공하는데 목적이 있다.In addition, an object of the present invention is to provide an economical manufacturing process by simplifying a complex surface treatment process when forming a metal film on a polymer by electroless plating or electroplating.
도 1은 본 발명중에 이온빔 표면 처리를 위한 장치의 개념도이다.1 is a conceptual diagram of an apparatus for ion beam surface treatment in accordance with the present invention.
도 2는 본 발명중에 1.0 kV 아르곤 이온으로 산소분위기에서 개질된 PE와 처리하지 않은 PE위에 형성한 구리의 도금 정도를 나타낸 사진이다.Figure 2 is a photograph showing the degree of plating of copper formed on PE and untreated PE modified in an oxygen atmosphere with 1.0 kV argon ions in the present invention.
도 3은 본 발명중에 개질된 PP 그리고 처리하지 않은 PP와 구리의 접착력을 3M 스카치 테이프 테스트한 결과를 나타낸 사진이다.Figure 3 is a photograph showing the results of the 3M Scotch tape test the adhesion of the modified PP and untreated PP and copper in the present invention.
도 4는 본 발명중에 개질된 PET 그리고 처리하지 않은 PET와 구리의 접착력을 3M 스카치 테이프 테스트한 결과를 나타낸 사진이다.Figure 4 is a photograph showing the results of the modified PET and untreated PET and copper adhesion test 3M Scotch tape test in the present invention.
도 5는 본 발명중에 개질된 PTFE 그리고 처리하지 않은 PTFE와 구리의 접착력을 3M 스카치 테이프 테스트한 결과를 나타낸 사진이다.Figure 5 is a photograph showing the results of the 3M scotch tape test the adhesion of the modified PTFE and untreated PTFE and copper in the present invention.
도 6은 본 발명중에 개질된 PTFE 그리고 처리하지 않은 PTFE의 화학 결합을 나타내는 XPS C1s 스펙트럼이다.6 is an XPS C1s spectrum showing chemical bonds of modified and untreated PTFE in the present invention.
*** 도면의 주요부분에 대한 부호의 설명 ****** Explanation of symbols for main parts of drawing ***
1:진공챔버2:반응성가스유입구1: vacuum chamber 2: reactive gas inlet
3:이온원4:기판3: ion source 4: substrate
5:진공 배기구5: vacuum exhaust port
본 발명은 고분자 위에 금속막을 증착함에 있어서, 기존의 복잡한 표면 처리공정을 대신하여 이온빔을 이용한 표면 처리만을 통하여 단순화되고 환경적 오염없는 제조공정 및 이러한 방법에 의하여 금속막이 증착된 고분자를 제공한다. 이를 위하여 본 발명은 이온 보조 반응법으로 고분자 표면에 친수성기를 부여하고 무전해 도금 또는 전해도금을 수행하여 고분자와 금속막의 접착력을 증진시키거나 도금 자체가 잘 되지않는 고분자에 쉽게 금속막이 형성되도록 한다.The present invention provides a simplified and environmentally free manufacturing process through the surface treatment using an ion beam instead of the conventional complex surface treatment process in the deposition of a metal film on the polymer and a polymer film deposited by the method. To this end, the present invention provides a hydrophilic group on the surface of the polymer by an ion assist reaction method and performs electroless plating or electroplating to enhance adhesion between the polymer and the metal film or to easily form a metal film on the polymer which is not well plated itself.
구체적으로는 진공챔버 안에서 반응성 가스를 주입하며 에너지를 갖는 이온빔을 고분자에 조사하여 상기 고분자 표면의 결합을 일부 파괴하고, 진공챔버에 반응성 가스를 주입하여 상기 결합이 파괴된 고분자 표면의 원자들을 반응성 가스와 반응하게 함으로써 상기 고분자 표면을 친수성으로 변화시키고, 친수성으로 변화된 상기 고분자 표면에 금속막을 증착시키는 것으로 이루어지는 고분자와 금속의 접착력 향상방법을 제공한다.Specifically, a reactive gas is injected into the vacuum chamber to irradiate the polymer with an ion beam having energy to partially destroy the bonds of the polymer surface, and a reactive gas is injected into the vacuum chamber to atomize the atoms on the polymer surface where the bond is broken. By reacting with the polymer to change the surface of the polymer to hydrophilic, and to provide a method for improving the adhesion between the polymer and the metal consisting of depositing a metal film on the surface of the polymer changed to hydrophilic.
상기 이온은 아르곤, 질소, 수소, 헬륨, 산소, 암모니아등의 이온화가 가능한 가스를 단독 혹은 혼합하여 사용할 수 있으며, 상기 반응성 가스는 산소, 질소, 암모니아, 수소 등을 단독 또는 혼합하여 사용할 수 있다.The ions may be used alone or in combination with a gas capable of ionizing such as argon, nitrogen, hydrogen, helium, oxygen, ammonia, the reactive gas may be used alone or in combination with oxygen, nitrogen, ammonia, hydrogen.
본 발명에 의하여, 에너지를 갖는 이온빔을 조사하고 반응성 가스를 불어넣어주어 표면 처리된 금속막에 접착된 고분자로는 폴리에틸렌(polyethylene), 폴리프로필렌 (polypropylene), 폴리테트라플르오르에틸렌(polytetrafluoroethylene), 폴리에틸렌테레프탈레이트(polyethylene terephtalate), 실리콘 러버(silicon rubber), 폴리스타일렌(polystylene), 폴리카보네이트(polycabonate), 에폭시(epoxy)등의 열가소성 또는 열경화성 수지가 포함된다.According to the present invention, polymers irradiated with an ion beam having energy and blown with a reactive gas and adhered to a surface-treated metal film may be polyethylene, polypropylene, polytetrafluoroethylene, polyethylene. Thermoplastic or thermosetting resins such as terephthalate (polyethylene terephtalate), silicone rubber (silicon rubber), polystylene (polystylene), polycarbonate (polycabonate), epoxy (epoxy).
일반적으로 고분자의 표면은 소수성을 가지고 있다. 이러한 수소성 표면을 진공조 안에서 가속에너지를 갖는 이온빔으로 고분자 표면의 결합을 일부 파괴한 후, 분위기 기체와 반응을 하게 함으로써 고분자 표면을 친수성으로 변화시키는데 본 발명의 특징이 있다. 특히, 적정한 가속전압과 단위 면적당 도달되어지는 이온량을 제어하여 고분자 표면의 친수성을 증가시키며, 증류수와의 접촉각을 약 30°이하로 감소시킬 수 있다.In general, the surface of the polymer is hydrophobic. The hydrophobic surface is characterized in that the polymer surface is made hydrophilic by reacting with an atmospheric gas after partially breaking the bond of the polymer surface with an ion beam having acceleration energy in a vacuum chamber. In particular, by controlling the appropriate acceleration voltage and the amount of ions reached per unit area to increase the hydrophilicity of the surface of the polymer, it is possible to reduce the contact angle with distilled water to about 30 ° or less.
고분자 표면에 친수성 작용기를 생성시키면 고분자 표면의 전자에 대한 친화력이 커지게 되므로 전자를 쉽게 내어주는 금속 원자와 고분자 표면 사이에서 도너-억셉터 상호작용(donor-acceptor interaction)을 증가시킬 수 있다. 이러한 도너-업셉터 상호 작용은 금속 원자와의 반응성을 증가시켜 금속 박막의 도금을 용이하게 할 수 있으며 도금된 금속 박막과 고분자 기판 사이의 접착력을 향상시킬 수 있다. 접착력을 측정하기 위하여 후술하는 바와 같이 3M 스카치 테이프 테스트를 수행한 결과, 친수성이 증진된 고분자 시편에 형성된 금속막은 접착력도 증가되는 것으로 나타났다.Generating hydrophilic functional groups on the surface of the polymer increases the affinity for the electrons on the surface of the polymer, thereby increasing donor-acceptor interaction between the metal atom and the surface of the polymer that readily emit electrons. This donor-upceptor interaction can increase the reactivity with the metal atoms to facilitate the plating of the metal thin film and can improve the adhesion between the plated metal thin film and the polymer substrate. As a result of performing the 3M Scotch tape test as described below to measure the adhesion, the metal film formed on the polymer specimen having the improved hydrophilicity was also found to increase the adhesion.
이하 도면을 참고하며 실시예를 통하여 본 발명을 구체적으로 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
고분자를 표면 개질하기 위하여 본 발명의 실시예에서는 아르곤 이온빔과 분위기 기체로서 산소를 사용하였다. 이온의 종류나 분위기 기체는 고분자 표면의 친수성을 증가시키는데 적합한 다양한 물질이 사용될 수 있다. 아르곤 이온빔의 이온원으로 냉음극이온건(cold hollow cathode ion gun)을 사용하였으며, 금속의 증착은 무전해 도금법을 이용하였다. 금속 증착에는 전해도금을 사용할 수도 있다.In the embodiment of the present invention, oxygen was used as the argon ion beam and the atmosphere gas to surface-modify the polymer. Various materials suitable for increasing the hydrophilicity of the surface of the polymer may be used as the kind of ions or the atmosphere gas. A cold hollow ion gun was used as an ion source of the argon ion beam, and metal deposition was performed using an electroless plating method. Electrolytic plating may also be used for metal deposition.
본 발명에서 사용한 고분자 표면 개질용 이온원의 일례를 설명하면 다음과 같다. 도 1은 본 발명중에 이온빔 표면 처리를 위한 장치의 개념도로서, 도시한 바와 같이, 진공챔버(1)의 내부에 반응성 기체를 유입시키는 부분(2)과, 기체를 이온화시키고 이온화된 기체이온을 가속시켜 이온을 인출하는 이온원(3), 기판 (4) 그리고 진공 배기구 (5)등의 부분으로 구성되어 있다.An example of the ion source for polymer surface modification used in the present invention is as follows. 1 is a conceptual diagram of an apparatus for ion beam surface treatment in the present invention, as shown, a portion (2) for introducing a reactive gas into the interior of the vacuum chamber (1), ionize the gas and accelerate the ionized gas ion And an ion source (3), a substrate (4), and a vacuum exhaust port (5) for extracting ions.
실시예.Example.
다음과 같은 실험 조건으로 고분자 표면을 개질하였다.The surface of the polymer was modified under the following experimental conditions.
실험 진공도 : 1 × 10-6TorrExperimental vacuum degree: 1 × 10 -6 Torr
가속전압 : 300 ~ 2000 VAcceleration voltage: 300 ~ 2000 V
유입 산소량 : 8 sccmInflow oxygen amount: 8 sccm
표면개질 재료 : 폴리프로필렌(Polypropylene; PP), 폴리테트라플르오르에틸렌(Polytetrafluoroethylene; PTFE), 폴리에틸렌(Polyethylene; PE), 폴리에틸렌테레프탈레이트(Polyethylene terephtalate; PET)Surface Modification Materials: Polypropylene (PP), Polytetrafluoroethylene (PTFE), Polyethylene (PE), Polyethylene terephtalate (PET)
이온주입량 : 1 × 1014~ 1 × 1017ions/cm2 Ion Implantation: 1 × 10 14 ~ 1 × 10 17 ions / cm 2
표면 개질된 고분자에 다음과 같은 조건으로 금속을 증착하였다.The metal was deposited on the surface-modified polymer under the following conditions.
증착방법 : 무전해 도금법Deposition Method: Electroless Plating
전해조 온도 (Bath temperature): 50 ~ 60 ℃Bath temperature: 50 ~ 60 ℃
용액 pH: 11 ~ 13Solution pH: 11 to 13
금속 두께 : 20000 ~ 30000 ÅMetal Thickness: 20000 ~ 30000 Å
사용된 무전해도금 용액 조성은 다음과 같다.The electroless plating solution composition used is as follows.
CuSO4·5H2O 6~10g/l, EDTA 15~30g/l, TMAH 100~140g/l, PEG(polyethyleneglycol) 1~2g/l, 2,2′-Bipyridine 1~3g/l, HCHO(37%) 6~10g/l, KOH 0~1.5g/lCuSO 4 · 5H 2 O 6 ~ 10g / l, EDTA 15 ~ 30g / l, TMAH 100 ~ 140g / l, PEG (polyethyleneglycol) 1 ~ 2g / l, 2,2′-Bipyridine 1 ~ 3g / l, HCHO ( 37%) 6 ~ 10g / l, KOH 0 ~ 1.5g / l
TMAH와 KOH는 전해조의 pH를 조절하기 위하여 사용되었으며 2,2′-Bipyridine은 도금 용액속에서 Cu가 자발적으로 증착되는 것을 방지하는 안정제로 사용되었다. 또한 PEG는 표면 에너지를 줄이는 계면 활성제로서 증착된 Cu 표면에 수소 방울이 형성되는 것을 방지한다.TMAH and KOH were used to control the pH of the electrolyzer and 2,2′-Bipyridine was used as a stabilizer to prevent spontaneous deposition of Cu in the plating solution. PEG is also a surfactant that reduces surface energy and prevents the formation of hydrogen droplets on the deposited Cu surface.
이온빔으로 표면 개질된 고분자의 친수성 향상 정도를 알아보기 위하여 이온의 가속전압을 1000V로 고정시키고 이온량에 따른 고분자 표면과 물과의 접촉각 변화를 표 1에 도시하였다.In order to determine the degree of hydrophilicity improvement of the surface-modified polymer by ion beam, the acceleration voltage of the ion was fixed at 1000V, and the change in contact angle between the polymer surface and water according to the amount of ions is shown in Table 1.
PE의 물에 대한 접촉각은 처리전의 85°에서 1×1017Ar+/cm2의 처리조건에서 약 25°로 줄어들었다. PP의 경우, 처리전의 75°에서 5×1016Ar+/cm2의 처리조건에서 약 24°로 감소하였다. PET의 경우, 처리전의 68°에서 1×1016Ar+/cm2의 처리조건에서 약 15°로 줄어들었다. 그리고 PTFE의 접촉각은 처리전의 102°에서 1×1015Ar+/cm2의 처리조건에서 약 71°로 줄어들었다. 접촉각의 감소는 고분자 표면의 친수성 증가를 의미한다.The contact angle of PE to water decreased from 85 ° before treatment to about 25 ° at 1 × 10 17 Ar + / cm 2 treatment conditions. In the case of PP, it decreased from about 75 ° to about 24 ° at 5 × 10 16 Ar + / cm 2 treatment conditions. In the case of PET, it was reduced to about 15 ° at the treatment condition of 1 × 10 16 Ar + / cm 2 at 68 ° before treatment. And the contact angle of PTFE was reduced to about 71 ° at the treatment condition of 1 × 10 15 Ar + / cm 2 at 102 ° before treatment. Decreasing the contact angle means increasing the hydrophilicity of the polymer surface.
고분자의 표면에 적정 에너지를 갖는 이온이 조사된 경우, 표면에 자유단(free radical)이 형성되고, 상기 자유단이 고분자 표면 주위로 유입된 반응성 기체와 반응하게 되면 에테르기, 카르보닐기, 카르복실기 등의 작용기가 형성되어 고분자의 표면 에너지가 증가한다. 표면 에너지의 증가는 표면의 친수성이 증가된 것을 의미하며, 따라서 친수성이 증가된 고분자 표면의 물에 대한 접촉각은 감소한다.When ions having appropriate energy are irradiated on the surface of the polymer, free radicals are formed on the surface, and when the free end reacts with a reactive gas introduced around the surface of the polymer, ether groups, carbonyl groups, carboxyl groups, etc. The functional groups are formed to increase the surface energy of the polymer. Increasing the surface energy means that the surface hydrophilicity is increased, so that the contact angle with respect to water of the polymer surface with increased hydrophilicity is reduced.
도 2은 본 발명에 의해 1.0 kV 아르곤 이온으로 산소 분위기에서 표면 처리된 PE(a)와 표면 처리하지 않은 PE(b) 위에 형성한 구리의 도금 정도를 나타낸 사진이다. 도 2에서 보는 바와 같이 처리하지 않은 PE위에는 구리가 거의 도금이 되지 않았고 도금이 된 부분도 거의 박리가 일어남을 알 수 있다. 그러나 표면 개질된 PE 위에 도금 용액에 침적된 전면적에 구리가 도금된 것을 알 수 있다. 이온빔으로 고분자 표면을 개질시킴으로써 금속 배양층(seed layer) 없이도 PE 위에 도금이 가능하며, 따라서 도금 공정을 단축시킬 수 있 수 있다.2 is a photograph showing the plating degree of copper formed on PE (a) surface-treated in an oxygen atmosphere with 1.0 kV argon ions and PE (b) not surface-treated according to the present invention. As shown in FIG. 2, the copper was hardly plated on the untreated PE, and the plated portion was almost peeled off. However, it can be seen that the copper is plated on the entire surface deposited in the plating solution on the surface-modified PE. By modifying the surface of the polymer with an ion beam, plating on the PE can be performed without a metal layer, thereby shortening the plating process.
도 3는 본 발명에 의해 표면 개질된 PP(b) 및 표면 처리하지 않은 PP(a)와 구리의 접착력을 3M 스카치 테이프로 테스트한 결과를 나타낸 사진이다. 도 2에서 알 수 있는 바와 같이 처리하지 않은 PP위에 도금한 구리는 스카치 테이프에 의하여 대부분 박리가 일어남을 볼 수 있다. 반면에 표면 개질된 PP위에 도금한 구리는 스카치 테이프로 테스트한 후에도 전혀 박리되거나 들뜸현상(bucking)이 일어나지 않아 접착력이 매우 증가하였음을 알 수 있다. PP의 경우 PE와 마찬가지로 고분자 내에 극성 작용기가 없으므로, 이러한 접착력의 증가는 이온 보조 반응에 의하여 형성된 카르복실기, 카르보닐기, 에테르기 등의 극성작용기 때문임을 알 수 있다.Figure 3 is a photograph showing the results of testing the adhesion of the surface modified PP (b) and the untreated PP (a) and copper by 3M Scotch tape according to the present invention. As can be seen in Figure 2, the copper plated on the untreated PP can be seen that most of the peeling off by Scotch tape. On the other hand, the copper plated on the surface-modified PP did not peel off or bucking at all even after testing with Scotch tape. In the case of PP, since there is no polar functional group in the polymer as in PE, it can be seen that this increase in adhesion is due to polar functional groups such as carboxyl groups, carbonyl groups, and ether groups formed by ion assist reactions.
도 4은 본 발명에 의해 표면 개질된 PET(b) 그리고 처리하지 않은 PET(a) 위에 도금된 구리의 접착력을 3M 스카치 테이프로 테스트한 결과를 나타낸 사진이다. PET는 고분자의 사슬내에 카르복실기와 카르보닐기가 단위체 내에 있으므로 접촉각이 상대적으로 낮고 표면에너지가 크므로 금속과의 접착력이 용이한 편이다. 그러나 고분자 표면의 극성 작용기는 공기중에서 벌크(bulk) 방향으로 재배열하여 전체 계의 에너지를 낮춘다. 도 4(a)에서 보는 바와 같이 일부의 무전해 도금된 구리가 박리된다. 이에 비하여 이온 보조 이온 반응법으로 처리된 구리(b)는 박리된 부분이 없으므로 접착력이 증진되었음을 알 수 있다. 그러므로 이온 보조 반응법은 극성 작용기가 있는 고분자에도 적용이 됨을 알 수 있다.Figure 4 is a photograph showing the results of testing the adhesion of the copper plated on the surface-modified PET (b) and untreated PET (a) by the present invention 3M Scotch tape. Since PET has a carboxyl group and a carbonyl group in the chain of the polymer, the contact angle is relatively low and the surface energy is large, so that the adhesive force with the metal is easy. However, the polar functional groups on the surface of the polymer rearrange in the bulk direction in the air to lower the energy of the whole system. As shown in Fig. 4A, some of the electroless plated copper is peeled off. On the other hand, the copper (b) treated by the ion assisted ion reaction method can be seen that the adhesion is enhanced because there is no peeled part. Therefore, it can be seen that the ion assisted reaction method is also applied to polymers having polar functional groups.
도 5는 본 발명에 의해 표면 개질된 PTFE(b) 그리고 처리하지 않은 PTFE(a)와 구리의 접착력을 3M 스카치 테이프로 테스트한 결과를 나타낸 사진이다. 처리전의 PTFE 위에 도금된 구리 박막이 전체적으로 박리됨에 비교하여 이온빔 처리후의 PTFE 위에 도금된 구리 박막은 박리되지 않았다. 앞에서 설명한 바와 같이 고분자 위에 이온 보조 반응법으로 형성된 극성 작용기가 도너-억셉터 상호작용(donor-acceptor interaction)을 증진시키므로 접착력이 개선된다. PTFE는 이온빔이 조사됨에 따라 표면 형상이 급격히 변화한다. 이러한 표면 형상 변화는 금속과의 접착력을 맞물림(interlocking)을 통하여 증진시키는 역할을 한다. PTFE의 경우, 1×1015Ar+/cm2이하의 이온 조사량에서는 표면 거칠기가 크게 변화하지 않으므로 극성 작용기의 상호 작용에 의하여 도금된 구리의 접착력이 향상되고, 1×1016Ar+/cm2이상의 이온 조사량에서는 도금된 구리가 극성 작용기의 상호 작용과 더불어 거친 표면의 맞물림 효과에 의하여 접착력이 향상됨을 알 수 있다.Figure 5 is a photograph showing the results of testing the adhesion of the surface modified PTFE (b) and untreated PTFE (a) and copper by 3M Scotch tape according to the present invention. The copper thin film plated on the PTFE after the ion beam treatment did not peel off as compared with the entire copper thin film plated on the PTFE before the treatment. As described above, the polar functional groups formed by the ion assisted reaction method on the polymer enhance donor-acceptor interaction, thereby improving adhesion. PTFE rapidly changes its surface shape as the ion beam is irradiated. This change in surface shape serves to promote adhesion with the metal through interlocking. In the case of PTFE, since the surface roughness does not change significantly at an ion dosage of 1 × 10 15 Ar + / cm 2 or less, the adhesion of the plated copper is improved by the interaction of the polar functional groups, and 1 × 10 16 Ar + / cm 2 In the above ion dosage, it can be seen that the plated copper improves adhesion due to the interaction of the polar functional groups and the cohesion of the rough surface.
이러한 접착력 증진은 분위기 산소의 이온 보조 반응에 의한 도너-억셉터 상호작용(donor-acceptor interaction)의 증진에 의한 것으로 생각되었으므로 XPS를 통하여 분석하였다. 도 6은 개질전 (a)과 1000 V의 가속전압과 8 sccm의 산소 유입량에서 1×1015/cm2개의 아르곤 이온을 조사하여 개질한 후 (b)의 PTFE 시편의 Cls spectra이다. 개질전의 시편과 비교하여 CF2-CF2간의 결합이 파괴되고 복잡한 형태로 전이되었음을 알 수 있었다. 또한 C-Fx, CF1, C-O간의 여러 결합의 위치에peak가 있으므로 교차결합(cross linking), 사슬 절단(bond scission) 등이 발생된 것으로 생각된다.This adhesion was thought to be due to the enhancement of the donor-acceptor interaction by the ion-assisted reaction of atmospheric oxygen and was analyzed through XPS. FIG. 6 is a Cls spectra of PTFE specimens of (b) before reforming (a) and by irradiating 1 × 10 15 / cm 2 argon ions at an acceleration voltage of 1000 V and an oxygen flow rate of 8 sccm. Compared with the pre-modified specimens, the bonds between CF 2 and CF 2 were broken and transferred into complex forms. In addition, since there is a peak at the position of various bonds between CF x , CF 1 , and CO, it is thought that cross linking, chain scission, etc. occurred.
결론적으로, 고분자 표면을 가속된 이온으로 활성화시켜 반응성 기체가 화학적 결합을 하도록 유도할 수 있으며, 이러한 반응에 의하여 생성된 친수성 결합은 전해도금 또는 무전해 도금으로 고분자 위에 금속 박막을 만들 때 억셉터로서 작용하므로 고분자와 증착금속간의 중간 금속 배양층없이도 금속막의 도금을 가능하게 하며 동시에 도금된 금속막과 고분자간의 접착력을 증진시킨다.In conclusion, the surface of the polymer can be activated with accelerated ions to induce the reactive gas to chemically bond. The hydrophilic bond formed by this reaction can be used as an acceptor when forming a thin metal film on the polymer by electroplating or electroless plating. As a result, the plating of the metal film is possible without the intermediate metal culture layer between the polymer and the deposited metal, and the adhesion between the plated metal film and the polymer is enhanced.
본 발명에 의하면, 고분자와 금속막의 접착력을 증진시키거나 도금 자체가 잘 되지않는 고분자에 쉽게 금속막이 형성되도록 하며, 특히 이온빔으로 고분자 표면을 개질시킴으로써 금속 배양층 없이도 고분자 위에 도금이 가능하며, 따라서 도금 공정을 단축시킬 수 있 수 있다.According to the present invention, the metal film is easily formed on the polymer which promotes adhesion between the polymer and the metal film or the plating itself is difficult, and in particular, by modifying the surface of the polymer with an ion beam, plating is possible on the polymer without a metal culture layer. The process can be shortened.
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KR20040026733A (en) * | 2002-09-25 | 2004-04-01 | 주식회사 피앤아이 | Method and Apparatus for Formation of Thick Layer on the Surface Modified Substrate |
KR100674532B1 (en) * | 2005-02-28 | 2007-01-29 | 한국과학기술연구원 | Method and apparatus for forming a metal thin film on the polymer |
KR100819873B1 (en) * | 2006-09-21 | 2008-04-07 | 주식회사 피앤아이 | Metal Coating Apparatus and Method of Burlap Using Physical Vapor Deposition |
WO2023106624A1 (en) * | 2021-12-10 | 2023-06-15 | 한국재료연구원 | Polymer substrate on which nanostructures are formed and sensor comprising same |
CN117467929A (en) * | 2023-12-28 | 2024-01-30 | 核工业西南物理研究院 | Surface metallization treatment method for high polymer material |
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KR100674532B1 (en) * | 2005-02-28 | 2007-01-29 | 한국과학기술연구원 | Method and apparatus for forming a metal thin film on the polymer |
KR100819873B1 (en) * | 2006-09-21 | 2008-04-07 | 주식회사 피앤아이 | Metal Coating Apparatus and Method of Burlap Using Physical Vapor Deposition |
WO2023106624A1 (en) * | 2021-12-10 | 2023-06-15 | 한국재료연구원 | Polymer substrate on which nanostructures are formed and sensor comprising same |
CN117467929A (en) * | 2023-12-28 | 2024-01-30 | 核工业西南物理研究院 | Surface metallization treatment method for high polymer material |
CN117467929B (en) * | 2023-12-28 | 2024-03-26 | 核工业西南物理研究院 | A kind of surface metallization treatment method of polymer materials |
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