KR20020042922A - Liquid crystal display for removing an imagesticking - Google Patents
Liquid crystal display for removing an imagesticking Download PDFInfo
- Publication number
- KR20020042922A KR20020042922A KR1020000072281A KR20000072281A KR20020042922A KR 20020042922 A KR20020042922 A KR 20020042922A KR 1020000072281 A KR1020000072281 A KR 1020000072281A KR 20000072281 A KR20000072281 A KR 20000072281A KR 20020042922 A KR20020042922 A KR 20020042922A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- liquid crystal
- pixel electrode
- crystal display
- ito
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 206010047571 Visual impairment Diseases 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 11
- 230000014759 maintenance of location Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 9
- 238000007599 discharging Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0257—Reduction of after-image effects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
본 발명은 잔상개선을 위한 액정 표시장치에 관한 것으로, 보다 상세하게 고투과 광시야각 모드인 FFS 모드의 제조공정상 전극구조의 개선을 통해 잔상을 제거할 수 있도록 한 잔상개선을 위한 액정 표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display for improving afterimage, and more particularly, to a liquid crystal display for improving afterimage to remove an afterimage by improving an electrode structure in a manufacturing process of a high-permeability wide viewing angle mode, FFS mode. .
주지된 바와 같이, 종래의 박막 액정 디스플레이(LCD; Liquid Crystal Display)는 휴대형 단말기기의 정보 표시창, 노트북 PC의 화면표시기, 랩탑 컴퓨터의 모니터 등의 정보표시장치로 사용되고 있다. 특히 액정 디스플레이는 기존의 브라운관형 모니터(CRT)를 대체할 수 있는 디스플레이장치로 산업상 그 활용도는 매우 높다.As is well known, a conventional liquid crystal display (LCD) is used as an information display device such as an information display window of a portable terminal device, a screen display of a notebook PC, a monitor of a laptop computer, and the like. In particular, the liquid crystal display is a display device that can replace the conventional CRT monitor, and its utilization is very high in the industry.
종래의 액정 디스플레이는 이전 고정 화상패턴이 일정시간 지속적으로 유지되는 잔상(Imagesticking)이 나타나게 되는 바, 그러한 잔상은 액정에 고정 화상패턴(Pattern)을 일정시간 인가시킨 후 그 화상패턴을 제거하게 되어도 약하게 화상패턴이 일정시간동안 남아있게 되는 것이다.In the conventional liquid crystal display, image sticking occurs in which the previous fixed image pattern is continuously maintained for a predetermined time. The afterimage is weak even when the image pattern is removed after a fixed time is applied to the liquid crystal. The image pattern remains for a certain time.
종래의 TN 모드의 경우에 비하여 광시야각을 구현하기 위하여 사용되는 IPS(InPlane Switching)이나 FFS(Fringe Field Switching)과 같은 모드의 경우 그 잔상이 오래도록 유지되게 된다.Compared to the conventional TN mode, the afterimage is maintained for a long time in modes such as IPS (InPlane Switching) or FFS (Fringe Field Switching), which are used to implement a wide viewing angle.
잔상의 원인은 액정을 구동할 때 인가되는 DC전압 성분에 의하여 이온의 상태에 따라서 한쪽으로 이동하게 되는 바, 그로 인하여 신호전압이 왜곡되어 잔상이 발생하게 된다. 이러한 잔상은 상하 기판에 전극을 형성하여 구동하는 TN 모드의 LCD에 비하여 동일 기판에 전극을 형성하여 액정을 구동하는 인 플레인 스위칭(Inplane Switching) 모드의 경우가 잔상에 대하여 구조적으로 더욱 취약하다.The cause of the afterimage is to move to one side according to the state of the ions by the DC voltage component applied when driving the liquid crystal, so that the signal voltage is distorted, resulting in an afterimage. Such afterimages are structurally more vulnerable to afterimages in the case of an inplane switching mode in which electrodes are formed on the same substrate to drive liquid crystals compared to TN mode LCDs in which electrodes are formed on upper and lower substrates.
종래의 FFS(Fringe Field Switching) 모드는 넓은 시야각의 구현과 높은 투과도를 보이고 있는 우수한 모드이나, 그 FFS 모드는 공통전극과 픽셀(Pixel)전극이 절연막층(Passivation Layer)를 사이에 두고 이격되어 있는 설계구조로서 잔류 DC의 방전(Discharging)에 어려움이 있어서 잔상이 발생되고 그 소멸시간이 길어지는 구조로 되어 있다.The conventional FFS (Fringe Field Switching) mode is an excellent mode showing a wide viewing angle and high transmittance, but the FFS mode has a common electrode and a pixel electrode spaced apart from each other with a passivation layer interposed therebetween. As a design structure, there is a difficulty in discharging residual DC, so that an afterimage occurs and the extinction time is long.
보다 상세하게, 도 1을 참고하여 종래의 잔상이 존재하는 전극구조에 대하여 기술한다. 도 1은 종래의 실시예에 따른 잔상이 존재하는 전극구조를 나타내는 단면도이다.In more detail, the electrode structure in which a conventional afterimage exists is described with reference to FIG. 1 is a cross-sectional view showing an electrode structure in which an afterimage exists according to a conventional embodiment.
이를 참조하면, 상기 1st ITO 전극(4)과 2nd ITO 전극(8) 사이에 전압이 인가되어 각 이온들이 배향막층(10)에 붙어 있게 되고 다른 그레이(Gray)로 전환된 후, 1st ITO 전극층(4)위에 붙은 이온(+)은 2nd ITO 전극(8)의 위층 배향막(10)에 붙은 이온(-)과 1st ITO 전극(4)에 형성된 전압에 의하여 힘을 받게 된다.Referring to this, a voltage is applied between the 1st ITO electrode 4 and the 2nd ITO electrode 8 so that each ion is attached to the alignment layer 10 and is converted to another gray, and then the 1st ITO electrode layer ( 4) The ions (+) attached to the above are forced by the ions (−) attached to the upper alignment layer 10 of the 2nd ITO electrode 8 and the voltage formed on the 1st ITO electrode 4.
즉, 1st ITO 전극(4)의 위층 배향막(10)에 붙은 이온(-)은 2nd ITO 전극(8)에 형성된 전압(상대적으로 +로 형성된)과 반대의 극성을 갖고 양변 1st ITO 전극(4)상에 붙은 (+)이온과도 반대의 극성을 갖게 된다.That is, the ions (-) attached to the upper alignment layer 10 of the 1st ITO electrode 4 have the opposite polarity to the voltage (relatively formed of +) formed on the 2nd ITO electrode 8 and have the opposite sides of the 1st ITO electrode 4. It also has the opposite polarity to the (+) ions attached to the phase.
그로인해, (+)이온들은 2nd ITO 전극(8)에 의해 수평방향 및 1st ITO 전극(4)에 의해 수직방향으로의 힘을 받아 어느 한쪽의 (-)이온과의 결합에 의한 방전(Discharging)이 어려워진다.As a result, the positive ions are subjected to the horizontal direction by the 2nd ITO electrode 8 and the vertical direction by the 1st ITO electrode 4, thereby discharging by coupling with one of the negative ions. This becomes difficult.
본 발명은 상기한 종래 기술의 사정을 감안하여 이루어진 것으로, 화소전극과 상대전극을 동일한 레이어에 형성시킴으로써 그 화소전극의 수평방향으로 등전위가 형성되어 방전 방해요인이 해제되어 잔류 DC를 효과적으로 방전시킬 수 있도록 한 잔상개선을 위한 액정 표시장치를 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in view of the above-described circumstances, and by forming the pixel electrode and the counter electrode on the same layer, an equipotential is formed in the horizontal direction of the pixel electrode, whereby the discharge disturbances are released to effectively discharge the residual DC. It is an object of the present invention to provide a liquid crystal display for improving afterimages.
도 1은 종래의 실시예에 따른 잔상이 존재하는 전극구조를 나타내는 단면도,1 is a cross-sectional view showing an electrode structure in which an afterimage exists according to a conventional embodiment;
도 2는 본 발명의 일실시예에 따른 잔상개선을 위한 전극구조를 도시한 단면도이다.2 is a cross-sectional view showing an electrode structure for improving afterimages according to an embodiment of the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
2:유리기판, 4,4':제 1전극,2: glass substrate, 4,4 ': first electrode,
6:절연막층, 8,8':제 2전극,6: insulating film layer, 8, 8 ': second electrode,
10:배향막층, 12:절연막층.10: alignment film layer, 12: insulating film layer.
상기한 목적을 달성하기 위해, 본 발명의 바람직한 실시예에 따르면 화소전극과 상대전극이 투명전극인 ITO로 이루어져 있으며, 상대전극이 화소전극과 함께 어레이 기판에만 형성되고, 상기 상대전극과 화소전극이 빗살무늬 모양으로 동일면에 형성됨으로써 전장인가시 프린지 필드(Fringe Field)와 액정의 유전율 특성에 의해 고휘도 광시야각이 가능하도록 된 잔상개선을 위한 액정 표시장치가 제공된다.In order to achieve the above object, according to a preferred embodiment of the present invention, the pixel electrode and the counter electrode are made of ITO which is a transparent electrode, the counter electrode is formed only on the array substrate together with the pixel electrode, and the counter electrode and the pixel electrode are Provided is a liquid crystal display device for image retention which is formed on the same surface in the shape of a comb-tooth pattern to enable a high brightness wide viewing angle due to the fringe field characteristics of the fringe field and the liquid crystal.
바람직하게, 상기 상대전극과 화소전극을 빗살무늬 모양으로 형성시키기 위하여 1st ITO층의 빗살무늬 패턴사이에 다시 에칭공정을 통해 홈이 형성되게 한 것을 특징으로 한다.Preferably, a groove is formed through an etching process again between the comb pattern of the 1st ITO layer to form the counter electrode and the pixel electrode in a comb pattern.
더욱 바람직하게, 1st ITO와 2nd ITO로 이루어진 빗살모양의 슬릿형 화소전극의 폭이 5㎛이하로 되게 한 것을 특징으로 하는 잔상개선을 위한 액정 표시장치가 제공된다.More preferably, there is provided a liquid crystal display for improving afterimages, characterized in that the width of the comb-shaped slit pixel electrode composed of 1st ITO and 2nd ITO is 5 탆 or less.
또한, 상기 상대전극과 화소전극의 형성시 그 상대전극과 화소전극의 빗살모양으로 형성된 슬릿형 전극간의 간격이 10㎛이하로 패터닝된 것을 특징으로 하는 잔상개선을 위한 액정 표시장치를 특징으로 한다.In addition, when the formation of the counter electrode and the pixel electrode, the distance between the counter electrode and the slit electrode formed in the shape of the comb of the pixel electrode is patterned to less than 10㎛ characterized in that the liquid crystal display device for image retention improvement.
이하, 본 발명에 대해 도면을 참조하여 상세하게 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail with reference to drawings.
본 발명은 먼저 기술한 상기 잔류 DC를 줄이는 공정설계인 바, 2nd ITO 전극(화소전극)을 1st ITO 전극과 동일하게 유리기판층의 상면에 형성시킴으로써 2nd ITO 전극층의 수평방향으로의 등전위를 형성시키고, 그 등전위의 형성으로 인해 방전(Discharging) 방해요인을 해제시켜 잔류 DC를 효과적으로방전(Discharging)시켜 잔상문제를 해결키 위한 것이다.The present invention is a process design for reducing the residual DC described above, by forming a 2nd ITO electrode (pixel electrode) on the upper surface of the glass substrate layer in the same manner as the 1st ITO electrode to form an equipotential in the horizontal direction of the 2nd ITO electrode layer In order to solve the afterimage problem by discharging residual DC effectively by discharging the discharging disturbance due to the formation of the equipotential.
도 2는 본 발명의 일실시예에 따른 잔상개선을 위한 전극구조를 도시한 단면도이다.2 is a cross-sectional view showing an electrode structure for improving afterimages according to an embodiment of the present invention.
이를 참조하면, 2nd ITO 전극층(8')과 1st ITO 전극층(4')을 동일하게 유리기판(2)상에 위치시키고 1st ITO 전극(4')과 공통전극(2st ITO; 8')간의 간격(I)은 10㎛이하로, 전극의 면적(W)은 5㎛이하로 구성되도록 하여 FF(Fringe Field)를 이용한 구동이 이루어지도록 함으로써 광시야각과 높은 투과도를 얻도록 한다.Referring to this, the 2nd ITO electrode layer 8 'and the 1st ITO electrode layer 4' are positioned on the glass substrate 2 in the same manner, and the distance between the 1st ITO electrode 4 'and the common electrode 2st ITO 8'. (I) is 10 μm or less, and the area W of the electrode is 5 μm or less so that driving using FF (Fringe Field) is performed to obtain a wide viewing angle and high transmittance.
이하, 상기한 잔상개선이 이루어진 전극구조에 대한 공정을 기술하면, 첫째로 투명금속인 ITO(Indum Tin Oxide; 4')를 Ar이나 산소가스, ITO 타겟 등을 이용하여 증착한 후 마스크 공정 및 HCl, HNO3, H2O 등의 케미컬을 사용하여 WET 에치를 이용하여 빗살모양으로 상대전극(8')을 형성한다. 이 때 빗살모양의 슬릿구조에서는 ITO의 폭(W)이 5㎛이하로 하나, 보다 이상적으로는 3.5㎛로 패터닝한다.Hereinafter, the process for the electrode structure in which the afterimage improvement is performed will be described. First, a transparent metal ITO (Indum Tin Oxide; 4 ′) is deposited using Ar, an oxygen gas, an ITO target, etc., followed by a mask process and HCl. The counter electrode 8 'is formed in the shape of a comb using a WET etch using chemicals such as HNO 3, H 2 O, and the like. At this time, in the comb-shaped slit structure, the width W of ITO is 5 µm or less, but ideally, it is patterned to 3.5 µm.
둘째로는, SiH4, O2, N2 가스와 APCVD 장비를 사용하여 이산화규소(SiO2) 절연막층(12)을 증착시킨 후 그 상면에 MoW나 Al-Nd 합금 혹은 Mo/Al 적층구조로 이루어진 불투명 금속을 Kr이나 Ar 가스 및 MoW Target이나 Al-Nd 타겟, 혹은 Mo 타겟, Al 타겟을 이용하여 증착시킨 후 마스크 공정과 Al-Nd 합금이나 Mo/Al 적층구조의 경우 H3PO4, CH3COOH, HNO3, H2O로 이루어진 에천트(Etchant)를 이용하여 습식 에칭한다. 또한, MoW의 경우 SF6나, CF4, O2 등의 가스를 이용한 건식 에칭공정을 이용하여 게이트 라인과 Cst(상대전극) 버스라인을 형성한다.Second, after depositing the silicon dioxide (SiO2) insulating layer 12 using SiH4, O2, N2 gas and APCVD equipment, an opaque metal made of MoW, Al-Nd alloy or Mo / Al laminated structure is deposited on the upper surface. After deposition using Kr or Ar gas and MoW Target or Al-Nd target, Mo target, or Al target, the mask process and the Al-Nd alloy or Mo / Al laminated structure consist of H3PO4, CH3COOH, HNO3, H2O. Wet etch using an etchant. In the case of MoW, a gate line and a Cst (relative electrode) bus line are formed using a dry etching process using gases such as SF6, CF4, and O2.
셋째로, 각종 가스를 이용하여 SiON/SiN/a-Si/n+a-Si층 PECVD 장비를 통해연속 증착시킨 후 SF6, He, HCl 등의 가스를 사용하여 건식 에칭을 행하여 Si 계열의 3 레이어층인 n+a-Si/a-Si/SiN 층을 패터닝하여 액티브를 형성한다.Third, the SiON / SiN / a-Si / n + a-Si layer PECVD equipment was used to continuously deposit various gases, followed by dry etching using gases such as SF6, He, HCl, etc. The layer n + a-Si / a-Si / SiN layer is patterned to form an active.
넷째로, 2nd ITO 전극(8')층을 1st ITO전극(4')층과 동일면에 형성하기 위하여 1ST ITO층(4')의 빗살무늬 사이에 다시 에칭공정을 통해 홈을 새겨둔다.Fourth, grooves are again carved through the etching process between the comb patterns of the 1ST ITO layer 4 'in order to form the 2nd ITO electrode 8' layer on the same plane as the 1st ITO electrode 4 'layer.
다섯째, 1st 레이어와 마찬가지로 Ar이나 산소가스, ITO 타겟 등을 이용하여 투명금속인 ITO를 증착시킨 후 마스크 공정 및 HCl, HNO3, H2O 등의 케미컬을 이용하여 습식 에칭을 행하는 바, 그 습식에칭으로 1st 레이어의 상대전극(8')과 대응되게 빗살모양으로 대응되는 화소전극(4')을 1st ITO (4')층의 사이 빗살무늬 사이에 동일한 빗살무늬 형태로 형성한다. 여기서 2nd ITO(8')로 이루어진 빗살모양의 슬릿형 화소전극(4')폭이 5㎛이하되게 하며, 더욱 이상적으로는 3.5㎛로 패터닝한다. 이때, 상대전극(8')과 화소전극(4')간의 간격은 10㎛이하로 패터닝한다.Fifth, as in the 1st layer, ITO is deposited using Ar, an oxygen gas, an ITO target, and the like, and then wet etching is performed using a mask process and chemicals such as HCl, HNO 3, and H 2 O. A pixel electrode 4 'corresponding to a comb-like shape corresponding to the counter electrode 8' of the layer is formed in the same comb pattern between the comb patterns between the 1st ITO (4 ') layers. The width of the comb-shaped slit pixel electrode 4 'made of 2nd ITO (8') is 5 µm or less, and more ideally, it is patterned to 3.5 µm. At this time, the distance between the counter electrode 8 'and the pixel electrode 4' is patterned to 10 μm or less.
여섯째, Mo/Al/Mo적층이나 MoW 등의 불투명 금속을 Kr이나 Ar 가스 및 MoW 타겟이나 Mo 타겟 혹은, Al 타겟을 이용하여 증착시킨 후, 마스크 공정을 행하며, Mo/Al/Mo의 경우에는 H3PO4, CH3COOH, HNO3, H2O로 이루어진 에천트(Etchant)를 이용하여 습식 에칭한다. 또한, MoW의 경우 SF6나, CF4, O2 등의 가스를 이용한 건식 에칭공정을 통하여 S/D(Source/Drain) 전극과 데이터 버스라인을 형성한다.Sixth, an opaque metal such as a Mo / Al / Mo stack or MoW is deposited using Kr, Ar gas, MoW target, Mo target, or Al target, followed by a mask process, and in the case of Mo / Al / Mo, H3PO4 Wet etching using an etchant consisting of, CH3COOH, HNO3, H2O. In the case of MoW, a source / drain (S / D) electrode and a data bus line are formed through a dry etching process using gases such as SF6, CF4, and O2.
일곱째, SiH4, NH3, N2, H2 등의 가스를 이용하여 PECVD장비로 SiN층으로 이루어진 2000Å 이상으로 페시베이션(Passivation)층을 형성한 후 모듈에서 OLB(Out Lead Bonding)작업시 접촉을 위해 게이트 패드부와 데이터 패드부의 페시베이션(Passivation)층을 SF6, O2 등의 가스를 이용하여 건식 에칭을 통해 개방시킨다.Seventh, after forming a passivation layer of more than 2000 층 of SiN layer by PECVD equipment using gas such as SiH4, NH3, N2, H2, gate pad for contact during OLB (Out Lead Bonding) work in module The passivation layer of the part and the data pad part is opened by dry etching using gases such as SF6 and O2.
상기한 구성의 본 발명의 일실시예에 따른 잔상개선을 위한 액정 표시장치의 기능과 작용을 첨부된 도면을 참조하여 상세하게 설명한다.The function and operation of the liquid crystal display for improving afterimages according to the exemplary embodiment of the present invention having the above-described configuration will be described in detail with reference to the accompanying drawings.
상기한 구조로 형성된 잔상개선을 위한 액정 표시장치는 2nd ITO 전극(상대전극; 8')을 1st ITO 전극(4')과 같이 유리기판(2)층의 상면에 형성시킴으로써 2nd ITO 전극(8')층의 수평방향으로의 등전위를 형성시키고, 그 등전위의 형성으로 인해 방전(Discharging) 방해요인을 해제시켜 잔류 DC를 효과적으로 방전(Discharging)시켜 잔상문제를 해결시킬 수 있게 된다.In the liquid crystal display for image retention improvement having the above structure, the 2nd ITO electrode 8 'is formed by forming a 2nd ITO electrode (relative electrode) 8' on the upper surface of the glass substrate 2 layer like the 1st ITO electrode 4 '. By forming the equipotential in the horizontal direction of the layer, and the formation of the equipotential, it is possible to solve the afterimage problem by effectively discharging the residual DC by discharging the discharging disturbance.
한편, 본 발명의 실시예에 따른 잔상개선을 위한 액정 표시장치는 단지 상기한 실시예에 한정되는 것이 아니라 그 기술적 요지를 이탈하지 않는 범위내에서 다양한 변경이 가능하다.Meanwhile, the liquid crystal display for improving the afterimage according to the embodiment of the present invention is not limited to the above-described embodiment, but various modifications can be made without departing from the technical gist of the present invention.
상기한 바와 같이, 본 발명에 따른 잔상개선을 위한 액정 표시장치는 종래의 FFS(Fringe Field Switching)에서 간단한 제조공정상의 전극구조의 변경을 통해 잔상효과를 개선함으로 인해 화면의 고품위를 실현시킬 수 있게 하고, 그로인해 고부가가치의 액정 표시장치를 제조할 수 있게 된다.As described above, the liquid crystal display for improving afterimage according to the present invention can realize the high quality of the screen by improving the afterimage effect by changing the electrode structure in a simple manufacturing process in the conventional FFS (Fringe Field Switching) As a result, a high value-added liquid crystal display device can be manufactured.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000072281A KR20020042922A (en) | 2000-12-01 | 2000-12-01 | Liquid crystal display for removing an imagesticking |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000072281A KR20020042922A (en) | 2000-12-01 | 2000-12-01 | Liquid crystal display for removing an imagesticking |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020042922A true KR20020042922A (en) | 2002-06-08 |
Family
ID=27678892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000072281A KR20020042922A (en) | 2000-12-01 | 2000-12-01 | Liquid crystal display for removing an imagesticking |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20020042922A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8531641B2 (en) | 2010-03-09 | 2013-09-10 | Samsung Display Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10221705A (en) * | 1997-02-07 | 1998-08-21 | Hoshiden Philips Display Kk | Liquid crystal display element |
| KR19980085147A (en) * | 1997-05-28 | 1998-12-05 | 구자홍 | Transverse electric field liquid crystal display device and manufacturing method thereof |
| KR19990036533A (en) * | 1997-10-16 | 1999-05-25 | 다니구찌 이찌로오, 기타오카 다카시 | In-plane Switching Liquid Crystal Display |
| KR19990047261A (en) * | 1997-12-03 | 1999-07-05 | 김영환 | Liquid crystal display |
| JPH11344727A (en) * | 1998-06-02 | 1999-12-14 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| KR20000013241A (en) * | 1998-08-06 | 2000-03-06 | 구본준, 론 위라하디락사 | In-plane switching mode lcd |
| KR20000031956A (en) * | 1998-11-11 | 2000-06-05 | 구본준 | Transverse electric field type lcd and fabrication method of the same |
-
2000
- 2000-12-01 KR KR1020000072281A patent/KR20020042922A/en not_active Application Discontinuation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10221705A (en) * | 1997-02-07 | 1998-08-21 | Hoshiden Philips Display Kk | Liquid crystal display element |
| KR19980085147A (en) * | 1997-05-28 | 1998-12-05 | 구자홍 | Transverse electric field liquid crystal display device and manufacturing method thereof |
| KR19990036533A (en) * | 1997-10-16 | 1999-05-25 | 다니구찌 이찌로오, 기타오카 다카시 | In-plane Switching Liquid Crystal Display |
| KR19990047261A (en) * | 1997-12-03 | 1999-07-05 | 김영환 | Liquid crystal display |
| JPH11344727A (en) * | 1998-06-02 | 1999-12-14 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| KR20000013241A (en) * | 1998-08-06 | 2000-03-06 | 구본준, 론 위라하디락사 | In-plane switching mode lcd |
| KR20000031956A (en) * | 1998-11-11 | 2000-06-05 | 구본준 | Transverse electric field type lcd and fabrication method of the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8531641B2 (en) | 2010-03-09 | 2013-09-10 | Samsung Display Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6707524B2 (en) | Fringe field switching mode liquid crystal display, and fabrication method therefor | |
| KR101211087B1 (en) | Thin film transistor substrate and display device having the same | |
| US20080180623A1 (en) | Liquid crystal display device | |
| KR20010004899A (en) | Method of manufacture liquid crystal display | |
| US20050128410A1 (en) | Thin film transistor array substrate and fabricating method thereof | |
| US20150146125A1 (en) | Liquid crystal display panel, liquid crystal display apparatus, and thin film transistor array substrate | |
| US20110234933A1 (en) | Liquid crystal display device and fabrication method of the same | |
| CN100365491C (en) | Multi-domain liquid crystal display and a thin film transistor substrate of the same | |
| KR100487432B1 (en) | A Liquid Crystal display Device | |
| KR100865838B1 (en) | Fringe-Field Switching Liquid Crystal Display | |
| KR20080048261A (en) | Liquid crystal display panel of horizontal electronic fileld applying type and method of fabricating the same | |
| KR20070002801A (en) | Method of forming fine pattern, liquid crystal display using the same, and fabricating method thereof | |
| CN107085330B (en) | PSVA pixel structure | |
| KR20020042922A (en) | Liquid crystal display for removing an imagesticking | |
| KR100717179B1 (en) | Method for manufacturing fringe field switching mode lcd | |
| KR20020054909A (en) | Apparatus for fringe field switching liquid crystal display device and method for manufacturing the same | |
| KR20020053575A (en) | Liquid crystal display device and method for manufacturing the same | |
| KR20070002758A (en) | Method of forming fine pattern, liquid crystal display using the same, and fabricating method thereof | |
| KR100705621B1 (en) | method for fabricating fringe field switching liquid crystal display | |
| KR101035927B1 (en) | Method For Fabricating Liquid Crystal Display Device of In Plane Switching Mode | |
| KR101260666B1 (en) | Thin film transistor substrate and liquid crystal display device and method of manufacturing the sames | |
| KR100476046B1 (en) | Fringe field switching mode liquid crystal display device | |
| KR100488941B1 (en) | Apparatus for fringe field switching mode liquid crystal display device | |
| KR20020085242A (en) | Apparatus for fringe field switching liquid crystal display and method for manufacturing the same | |
| KR20010058184A (en) | Method of manufacturing lcd having high aperture ratio and high transmittance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| N231 | Notification of change of applicant | ||
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |