KR200169720Y1 - Vertical rotating wet station - Google Patents
Vertical rotating wet station Download PDFInfo
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- KR200169720Y1 KR200169720Y1 KR2019970018918U KR19970018918U KR200169720Y1 KR 200169720 Y1 KR200169720 Y1 KR 200169720Y1 KR 2019970018918 U KR2019970018918 U KR 2019970018918U KR 19970018918 U KR19970018918 U KR 19970018918U KR 200169720 Y1 KR200169720 Y1 KR 200169720Y1
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- isopropyl alcohol
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안에 의한 수직 회전식 웨트 스테이션은 수직으로 설치되는 진공척과, 상기 진공척의 일측단에 설치되는 회전모터와, 상기 진공척 타측단의 흡착면에 수직으로 고정되는 웨이퍼와, 상기 웨이퍼에 화학액과 순수를 분사하는 제1노즐과, 상기 웨이퍼에 이소프로필 알콜을 분사하여 웨이퍼를 건조시키는 제2노즐로 구성되어, 웨이퍼 전면에 균일한 식각과 린스가 가능하며, 건조시 회전에 의한 원심력을 이용하지 않고, 이소프로필 알콜(IPA; ISOPROPYL ALCOHOL) 증기를 이용하기 때문에 웨이퍼 중심부의 물자욱 방지 및 깊은 골에 남아 있는 순수를 완전히 제거하며, 특히 진공척 내부에 히터가 장착되어 웨이퍼의 건조시간을 단축하도록 하였다.The vertical rotary wet station according to the present invention includes a vacuum chuck installed vertically, a rotary motor installed at one end of the vacuum chuck, a wafer fixed vertically to an adsorption surface of the other end of the vacuum chuck, and a chemical liquid on the wafer. It consists of a first nozzle for injecting pure water and a second nozzle for drying the wafer by injecting isopropyl alcohol onto the wafer, which enables uniform etching and rinsing on the entire surface of the wafer, and does not use centrifugal force due to rotation during drying. Instead, it uses isopropyl alcohol (IPA; ISOPROPYL ALCOHOL) vapor to prevent material contamination at the center of the wafer and to completely remove the pure water remaining in the deep valleys. It was.
Description
본 고안은 반도체 제조장비중에서 식각공정과 세정공정 및 건조공정에 사용되는 수직 회전식 웨트 스테이션에 관한 것이다.The present invention relates to a vertically rotating wet station used in etching, cleaning and drying processes in semiconductor manufacturing equipment.
종래의 기술에 의한 웨트 스테이션(wet station)은 도 1에 도시한 바와 같이, 웨이퍼(1)를 수평상태에서 회전시키도록 형성한 진공척(2)과, 상기 진공척의 하부에 설치되는 회전모터(3)와, 상기 웨이퍼의 상부 중앙에 위치하여 화학액을 분사시키는 제1노즐(4)과, 화학반응이 종료되면 순수(DIW; DEIONIZED WATER)가 분사되어 린스(rinse)하게 되는 제2노즐(5)로 구성된다.As shown in FIG. 1, the wet station according to the related art includes a vacuum chuck 2 formed to rotate the wafer 1 in a horizontal state, and a rotary motor installed under the vacuum chuck ( 3) a first nozzle 4 located in the upper center of the wafer to inject a chemical solution, and a second nozzle (DIW) to be rinsed by spraying pure water (DIW) when the chemical reaction is completed. 5) consists of.
이와 같이 구성된 종래의 기술에 의한 수평 회전식 웨트 스테이션의 동작을 설명한다.The operation of the horizontal rotating wet station according to the related art configured as described above will be described.
로봇암이 웨이퍼(1)를 진공척(2)위에 올려놓는다. 그런 다음, 진공척이 웨이퍼를 고정한 후, 모터(3)가 구동하여 웨이퍼(1)를 회전시키면서 제1노즐(4)에서 약액이 분사되어 반응이 시작된다. 시간 설정에 의한 공정에 따라 화학반응이 종료되면, 약액분사가 멈추고, 순수가 제2노즐(5)을 통하여 분사되면서 린스를 한다. 린스가 종료되면, 회전모터(3)가 3000RPM내외의 고속으로 회전하게 되고, 상기 회전에 의한 원심력을 이용하여 웨이퍼(1)에 묻어 있는 순수를 제거하여 건조시킨다.The robot arm places the wafer 1 on the vacuum chuck 2. Then, after the vacuum chuck fixes the wafer, the chemical liquid is injected from the first nozzle 4 while the motor 3 is driven to rotate the wafer 1 to start the reaction. When the chemical reaction is finished according to the process by the time setting, the chemical liquid injection is stopped, the pure water is sprayed through the second nozzle (5) to rinse. When the rinse is completed, the rotary motor 3 is rotated at a high speed of about 3000 RPM, and the pure water on the wafer 1 is dried by using the centrifugal force by the rotation.
종래의 기술에서는 제1노즐(4)이 웨이퍼(1)상의 중심에 있어, 웨이퍼 중심부에 화학반응이 많이 발생되어, 중심부가 많이 식각되어 균일한 표면을 갖지 못하고, 회전 건조시 웨이퍼(1) 중심이 회전의 중심이 되어, 웨이퍼의 중심은 원심력이 작용하지 않아, 중심부에 있는 순수는 완전히 제거되지 않게 되고, 이로 인해 웨이퍼상에 이상 산화막 형태의 물자욱이 발생하게 되며, 회전건조 방식은 칩의 복잡한 형태를 가지는 구조에 대해서는 순수가 깊은 골속에 남게되어 완전히 건조되기 어려운 문제점이 있는 바, 본 고안의 목적은 상기와 같은 문제점을 고려하여 안출한 것으로, 웨이퍼가 수직으로 세워져 회전하고, 화학액 및 순수가 직각방향에서 좌,우로 움직이면서 분사되어, 웨이퍼 전면에 균일한 식각과 린스가 가능하며, 건조시 회전에 의한 원심력을 이용하지 않고, 이소프로필 알콜(IPA; ISOPROPYL ALCOHOL) 증기를 이용하기 때문에 웨이퍼 중심부의 물자욱 방지 및 깊은 골에 남아 있는 순수를 완전히 제거하며, 특히 진공척 내부에 히터가 장착되어 웨이퍼의 건조시간을 단축하도록 한 수직 회전식 웨트 스테이션을 제공함에 있다.In the related art, the first nozzle 4 is located at the center of the wafer 1, and a lot of chemical reactions occur at the center of the wafer, so that the center is etched a lot so that the first nozzle 4 does not have a uniform surface. As the center of rotation, the centrifugal force is not applied to the center of the wafer so that the pure water in the center is not completely removed, which causes an abnormal oxide film formation on the wafer. With respect to the structure having a shape, pure water remains in a deep bone, so that it is difficult to be completely dried. The object of the present invention was devised in consideration of the above problems, and the wafer is vertically rotated, and the chemical liquid and pure water Is sprayed while moving left and right in the right direction, enabling uniform etching and rinsing on the entire surface of the wafer, and centrifugal force due to rotation during drying By using isopropyl alcohol (IPA; ISOPROPYL ALCOHOL) steam, it prevents material accumulation at the center of the wafer and completely removes pure water remaining in deep valleys.In particular, a heater is installed inside the vacuum chuck to reduce the drying time of the wafer. It is to provide a vertical rotary wet station to shorten.
도 1은 종래의 기술에 의한 수평 회전식 웨트 스테이션을 나타내는 개략 측면도.1 is a schematic side view showing a horizontal rotary wet station according to the prior art;
도 2는 본 고안에 의한 수직 회전식 웨트 스테이션을 나타내는 개략 측면도.Figure 2 is a schematic side view showing a vertical rotary wet station according to the present invention.
(도면의 주요부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
11 ; 웨이퍼 12 ; 진공척11; Wafer 12; Vacuum chuck
13 ; 회전모터 14 ; 제1노즐13; Rotary motor 14; 1st nozzle
15 ; 제2노즐 16 ; 히터15; Second nozzle 16; heater
이러한, 본 고안의 목적은 수직으로 설치되는 진공척과, 상기 진공척의 일측단에 설치되는 회전모터와, 상기 진공척 타측단의 흡착면에 수직으로 고정되는 웨이퍼와, 상기 웨이퍼에 화학액과 순수를 분사하는 제1노즐과, 상기 웨이퍼에 이소프로필 알콜을 분사하여 웨이퍼를 건조시키는 제2노즐에 의해 달성된다.The object of the present invention is to provide a vacuum chuck installed vertically, a rotary motor installed at one end of the vacuum chuck, a wafer fixed vertically to an adsorption surface of the other end of the vacuum chuck, and chemical liquid and pure water on the wafer. And a second nozzle for drying the wafer by injecting isopropyl alcohol into the wafer.
이하, 본 고안에 의한 수직 회전식 웨트 스테이션을 첨부도면에 도시한 실시예에 따라서 설명한다.Hereinafter, the vertical rotary wet station according to the present invention will be described according to the embodiment shown in the accompanying drawings.
도 2는 본 고안에 의한 수직 회전식 웨트 스테이션을 나타내는 개략 측면도를 보인 것으로, 이에 도시한 바와 같이, 본 고안은 수직으로 설치되는 진공척(12)과, 상기 진공척의 일측단에 설치되어 식각 및 세정시 웨이퍼를 저속으로 회전시키는 회전모터(13)와, 상기 진공척(12) 타측단의 흡착면에 수직으로 고정되는 웨이퍼(11)와, 상기 웨이퍼에 화학액과 순수를 분사하는 제1노즐(14)과, 상기 웨이퍼에 이소프로필 알콜을 분사하여 웨이퍼를 건조시키는 제2노즐(15)로 구성된다.Figure 2 shows a schematic side view showing a vertically rotating wet station according to the present invention, as shown in the present invention, a vacuum chuck 12 is installed vertically, and is installed on one side end of the vacuum chuck for etching and cleaning A rotary motor 13 for rotating the wafer at a low speed, a wafer 11 fixed perpendicularly to an adsorption surface at the other end of the vacuum chuck 12, and a first nozzle for injecting chemical liquid and pure water onto the wafer ( 14) and a second nozzle 15 for spraying isopropyl alcohol on the wafer to dry the wafer.
상기 웨이퍼(11)가 고정되는 진공척의 흡착면 내측에 히터(16)를 설치하여 웨이퍼를 건조시키도록 한다.The heater 16 is installed inside the suction surface of the vacuum chuck to which the wafer 11 is fixed to dry the wafer.
상기 제1노즐(14)은 웨이퍼(11)의 내주상에 위치하며, 균일한 린스를 위하여 좌,우로 이동되도록 설치하고, 상기 제2노즐(15)은 웨이퍼(11)의 외주상에 위치하며, 진공척(12)내의 히터(16)가 가열됨과 동시에 이소프로필 알콜을 웨이퍼(11)의 전면에 분사하도록 설치한다.The first nozzle 14 is positioned on the inner circumference of the wafer 11, and installed to move left and right for uniform rinsing, and the second nozzle 15 is located on the outer circumference of the wafer 11. The heater 16 in the vacuum chuck 12 is heated, and isopropyl alcohol is sprayed on the entire surface of the wafer 11.
이와 같이 구성된 본 고안에 의한 수직 회전식 웨트 스테이션의 동작을 살펴보면 다음과 같다.Looking at the operation of the vertical rotary wet station according to the present invention configured as described above are as follows.
로봇암이 웨이퍼(11)를 진공척에 세팅시킨다. 그런 다음, 진공척(12)이 웨이퍼를 잡고 회전하면서, 제1노즐(14)에서 화학액이 분사되어 웨이퍼가 식각반응을 한다. 이때 제1노즐(14)이 좌,우로 움직여 웨이퍼(11) 전면에 균일한 반응이 일어나도록 한다. 시간설정에 의한 공정에 따라 화학반응이 종료되면, 동일한 제1노즐(14)을 통하여 순수가 분사된다. 이때도 균일한 린스를 위하여 상기 제1노즐(14)이 좌,우로 움직인다. 린스가 완전히 끝나면 회전을 멈추고, 진공척(12) 내부의 히터(16)가 가열되어 웨이퍼 온도를 80℃까지 승온 시킴과 동시에 제2노즐(15)을 통하여 웨이퍼(11) 전면에 이소프로필 알콜 증기를 뿌린다. 약 2분 후 이소프로필 알콜 증기의 분사를 멈추고, 히터(16)를 오프시키며, 웨이퍼(11)를 빼낸다. 상기 이소프로필 알콜 증기 분사를 멈추면 1분 정도후에 웨이퍼는 완전히 건조된다.The robot arm sets the wafer 11 on the vacuum chuck. Then, as the vacuum chuck 12 holds the wafer and rotates, chemical liquid is injected from the first nozzle 14 to etch the wafer. At this time, the first nozzle 14 moves left and right so that a uniform reaction occurs on the entire surface of the wafer 11. When the chemical reaction is completed according to the time-setting process, pure water is injected through the same first nozzle 14. In this case, the first nozzle 14 is moved left and right for uniform rinsing. When the rinse is completed, the rotation is stopped and the heater 16 inside the vacuum chuck 12 is heated to raise the wafer temperature to 80 ° C., and at the same time, the isopropyl alcohol vapor is formed on the entire surface of the wafer 11 through the second nozzle 15. Sprinkle it. After about 2 minutes, the injection of isopropyl alcohol vapor is stopped, the heater 16 is turned off, and the wafer 11 is removed. One minute after stopping the isopropyl alcohol vapor injection, the wafer is completely dried.
이상에서 설명한 바와 같이, 본 고안에 의한 수직 회전식 웨트 스테이션은 수직으로 설치되는 진공척과, 상기 진공척의 일측단에 설치되는 회전모터와, 상기 진공척 타측단의 흡착면에 수직으로 고정되는 웨이퍼와, 상기 웨이퍼에 화학액과 순수를 분사하는 제1노즐과, 상기 웨이퍼에 이소프로필 알콜을 분사하여 웨이퍼를 건조시키는 제2노즐로 구성되어, 웨이퍼 전면에 균일한 식각과 린스가 가능하며, 건조시 회전에 의한 원심력을 이용하지 않고, 이소프로필 알콜(IPA; ISOPROPYL ALCOHOL) 증기를 이용하기 때문에 웨이퍼 중심부의 물자욱 방지 및 깊은 골에 남아 있는 순수를 완전히 제거하며, 특히 진공척 내부에 히터가 장착되어 웨이퍼의 건조시간을 단축하도록 한 효과가 있다.As described above, the vertical rotary wet station according to the present invention includes a vacuum chuck installed vertically, a rotary motor installed at one end of the vacuum chuck, a wafer fixed vertically to an adsorption surface of the other end of the vacuum chuck, It consists of a first nozzle for injecting chemicals and pure water to the wafer, and a second nozzle for drying the wafer by injecting isopropyl alcohol to the wafer, it is possible to uniformly etch and rinse the entire surface of the wafer, and to rotate during drying Because it uses isopropyl alcohol (IPA; ISOPROPYL ALCOHOL) steam without using centrifugal force, it completely prevents material accumulation at the center of the wafer and completely removes pure water remaining in deep valleys. It is effective to shorten the drying time.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970018918U KR200169720Y1 (en) | 1997-07-18 | 1997-07-18 | Vertical rotating wet station |
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019970018918U KR200169720Y1 (en) | 1997-07-18 | 1997-07-18 | Vertical rotating wet station |
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| KR200169720Y1 true KR200169720Y1 (en) | 2000-02-01 |
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| KR101491068B1 (en) * | 2013-08-12 | 2015-02-10 | 주식회사 케이씨텍 | Horizontal injection pre-wetting equipment |
| DE102017212887A1 (en) * | 2017-07-26 | 2019-01-31 | Gebr. Schmid Gmbh | Method, device and system for printed circuit board production |
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