KR20010009058A - Photosensitive resin composition - Google Patents
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- KR20010009058A KR20010009058A KR1019990027211A KR19990027211A KR20010009058A KR 20010009058 A KR20010009058 A KR 20010009058A KR 1019990027211 A KR1019990027211 A KR 1019990027211A KR 19990027211 A KR19990027211 A KR 19990027211A KR 20010009058 A KR20010009058 A KR 20010009058A
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- G—PHYSICS
- G02—OPTICS
- G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
- G02C5/00—Constructions of non-optical parts
- G02C5/14—Side-members
- G02C5/16—Side-members resilient or with resilient parts
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- G—PHYSICS
- G02—OPTICS
- G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
- G02C2200/00—Generic mechanical aspects applicable to one or more of the groups G02C1/00 - G02C5/00 and G02C9/00 - G02C13/00 and their subgroups
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Abstract
Description
본 발명은 알칼리 수용액 하에서 현상이 가능한 감광성 수지 조성물 에 관한 것으로서, 더욱 상세하게는 LCD(Liquid Crystal Display) 제조 공정에서 칼라 필터 및 TFT(Thin Film Transistor) 회로 보호막(passivation)으로 유용한 감광성 수지 조성물에서 막 특성 및 감광 특성이 향상된 감광성 수지 조성물에 관한 것이다.The present invention relates to a photosensitive resin composition that can be developed under an aqueous alkali solution, and more particularly, to a film in a photosensitive resin composition useful as a color filter and thin film transistor (TFT) circuit passivation in a liquid crystal display (LCD) manufacturing process. The present invention relates to a photosensitive resin composition having improved characteristics and photosensitive characteristics.
최근 자외선(UV) 등과 같은 활성광을 이용하여 화상을 형성하는 이른바 포토리토그라피(photolithography) 기술의 발전으로 말미암아 미세화상의 형성이 필요한 많은 분야에서 알칼리 수용액 중에서 현상 가능한 감광성 수지에 대한 수요가 증가하고 있다.Recently, due to the development of so-called photolithography, which forms images using active light such as ultraviolet (UV) light, there is an increasing demand for photosensitive resins that can be developed in aqueous alkali solution in many fields requiring the formation of microscopic images. .
알칼리 현상형 감광성 수지는 인쇄 회로 기판의 제조에 사용되는 드라이 필름 레지스트, 반도체 회로 제작용 포토레지스트 등에 이용되어 왔으며, 최근에는 반도체 및 LCD를 포함하는 FPD(Flat Panel Display) 분야에서 칼라 필터 및 여러 가지 회로 보호막으로도 용도가 확대되고 있다.Alkali-developable photosensitive resins have been used in dry film resists used in the manufacture of printed circuit boards, photoresists for the manufacture of semiconductor circuits, and in recent years, in the field of flat panel displays including semiconductors and LCDs, color filters and various Applications are also expanding as circuit protective films.
알칼리 수용액 중에서 현상이 가능한 감광성 수지 조성물은 일반적으로 가) 알칼리 수용액에 의하여 용해되거나 팽윤되는 바인더 수지; 나) 적어도 2개 이상의 에틸렌성 불포화 결합을 갖는 가교성 화합물; 다) 광중합 개시제 라) 위에서 언급한 각 성분들을 용해할 수 있는 용제로 이루어져 있으며 여기에다 필요한 경우 염료, 안료 또는 제막 성능이나 기판과의 접착력을 향상시키는 여러 가지 첨가제를 함유하기도 한다.The photosensitive resin composition which can be developed in an aqueous alkali solution is generally a) a binder resin dissolved or swelled by an aqueous alkali solution; B) crosslinkable compounds having at least two ethylenically unsaturated bonds; C) Photopolymerization Initiator D) Consists of a solvent that can dissolve each of the components mentioned above, and may contain other additives that, if necessary, improve the dye, pigment, or film forming performance or adhesion to the substrate.
상기 가)는 알칼리 수용액에 의하여 용해 또는 팽윤되는 바인더 수지로써 일반적으로 고분자 사슬 중에 카르본산 또는 무수카르본산 또는 수산화기, 아미노기, 아미드기를 함유하는 구조로 이루어져 있으며 노블락계 페놀 수지 또는 아크릴계 수지 단독 중합체 또는 공중합체가 널리 이용되고 있다.The a) is a binder resin dissolved or swelled by an aqueous alkali solution, and generally has a structure containing carboxylic acid or carboxylic anhydride or a hydroxyl group, an amino group, and an amide group in a polymer chain, and a noblel phenolic resin or an acrylic resin homopolymer or air. Coalescing is widely used.
알칼리 용액에 가용성인 아크릴계 바인더 수지는 아크릴산 또는 메타아크릴산과 이들의 알킬 에스테르, 치환 또는 치환되지 않은 아릴 에스테르(aryl ester)로 이루어진 군에서 선택되는 1 이상의 화합물을 이용한 공중합체가 주로 사용된다.As the acrylic binder resin soluble in an alkaline solution, a copolymer using acrylic acid or methacrylic acid and one or more compounds selected from the group consisting of alkyl esters thereof and substituted or unsubstituted aryl esters is mainly used.
미국 특허 제4629680호와 미국 특허 제4139391호에서는 벤질 아크릴레이트/메타아크릴산의 공중합체를 이용하였으며 일본 공고특허공보 소54-34327에서는 메틸메타아크릴레이트/2-에틸헥실메타아크릴레이트/메타아크릴산의 삼원 공중합체가 개시되어 있으며, 일본 공고특허공보 소55-6210에서는 메틸메타아크릴레이트/에틸아크릴레이트/아크릴산으로 이루어진 삼원 공중합체를 언급하고 있다. 또한, 일본 공개특허공보 평9-23059에서는 알릴아크릴레이트(allylacrylate), 히드록시알킬아크릴레이트, 메타크릴산 등을 이용하는 공중합체에 대하여 기술하고 있다.U.S. Patent No. 4629680 and U.S. Patent No. 4139391 used a copolymer of benzyl acrylate / methacrylic acid, and Japanese Patent Application Publication No. 54-34327 discloses a ternary of methyl methacrylate / 2-ethylhexyl methacrylate / methacrylic acid. Copolymers are disclosed, and Japanese Patent Application Laid-open No. 55-6210 refers to a terpolymer consisting of methyl methacrylate / ethyl acrylate / acrylic acid. In addition, Japanese Patent Laid-Open No. 9-23059 describes a copolymer using allyl acrylate, hydroxyalkyl acrylate, methacrylic acid, and the like.
상기 나)의 화합물은 적어도 2개 이상의 에틸렌성 불포화 결합을 갖는 가교성 화합물로써 구체적인 예로서는 폴리에틸렌글리콜디(메타)아크릴레이트, 프로필렌글리콜디(메타)아크릴레이트, 1,3-부탄디올디(메타)아크릴레이트, 네오펜틸글리콜디(메타)아크릴레이트, 1,6-헥산디올디(메타)아크릴레이트, 트리메틸올프로판트리(메타)아크릴레이트, 펜타에리트리톨테트라(메타)아크릴레이트, 디펜타에리트리톨펜타(메타)아크릴레이트, 펜타에리트리톨헥사(메타)아크릴레이트 등이 있다.The compound of b) is a crosslinkable compound having at least two ethylenically unsaturated bonds, and specific examples thereof include polyethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, and 1,3-butanediol di (meth) acryl. Latene, neopentyl glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (Meth) acrylate, pentaerythritol hexa (meth) acrylate, etc. are mentioned.
종래 기술의 감광성 수지 조성물에서는 이러한 가교성 화합물이 조성물 내에서 바인더 수지에 분포되어 있다가 UV 등의 활성광에 의하여 노광되게 되면 가교성 반응을 일으키게 되며 그물 구조를 이룸으로써 알칼리 가용성 수지가 현상 과정 중에 현상액에 의하여 용해되어 나가는 것을 방지하여 줌으로써 결과적으로 기판 위에 이미지를 남기게 되는 역할을 하게 된다.In the photosensitive resin composition of the prior art, such a crosslinkable compound is distributed in a binder resin in the composition, and when exposed by actinic light such as UV, a crosslinkable reaction is caused. The alkali-soluble resin is formed during the development process by forming a net structure. By preventing the solution from being dissolved by the developer, it serves to leave an image on the substrate as a result.
그러나, 종래의 감광성 수지 조성물에서는 노광된 부분과 노광되지 않은 부분과의 용해성 차이가 충분히 크지 못하여 실제로는 현상 과정 중에 남아 있어야 할 바인더 수지가 현상 용액에 의하여 일부 녹아 나가기도 함으로써 결과적으로 원하는 미세 패턴의 형상을 얻기 어려운 경우가 대부분이었다.However, in the conventional photosensitive resin composition, the solubility difference between the exposed portion and the unexposed portion is not large enough, and in some cases, the binder resin, which should remain in the developing process, is partially melted by the developing solution, resulting in the desired fine pattern. In most cases, it was difficult to obtain a shape.
한편, 이러한 현상을 방지하기 위하여 가교성 화합물을 과다하게 사용하게 되면 노광 후 표면의 경도가 저하되어 공정성을 저하시키게 될 뿐 아니라 충분한 가교화 반응을 일으키기 위한 노광량이 많아짐으로써 공정 수율을 저하시키게 된다.On the other hand, when the crosslinking compound is excessively used in order to prevent such a phenomenon, the surface hardness after exposure is lowered, thereby lowering the processability and increasing the exposure amount for causing a sufficient crosslinking reaction, thereby lowering the process yield.
또한, 이런 경우 노광되지 않은 부분의 용해도도 같이 저하되게 되어 레지스트로서의 분해능이 감소하는 단점이 있다.In addition, in this case, the solubility of the unexposed portion is also lowered, resulting in a decrease in resolution as a resist.
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여, 노광 과정 중에 노광된 부분에서 바인더 수지와 가교성 화합물의 화학적 결합과 동시에 바인더 수지 사슬간의 화학적 결합을 일으킬 수 있는 링커 성분을 첨가함으로써 현상 과정 중에 비노광 부위와의 용해도 차이를 극대화하여 분해능이 우수하고 가교성 화합물의 사용량을 감소시킴으로써 전체 노광량을 감소시켜 공정상 유리할 뿐만 아니라 막 특성이 우수한 감광성 수지를 제공하는 것이다.In order to solve the problems as described above, the present invention, by adding a linker component that can cause chemical bonding between the binder resin and the crosslinkable compound in the exposed portion during the exposure process and at the same time the chemical bond between the binder resin chains, It is to provide a photosensitive resin having excellent resolution and maximizing solubility difference with an exposed site and reducing overall exposure by reducing the amount of crosslinkable compound, which is not only advantageous in process but also excellent in film properties.
본 발명은 이상과 같은 목적을 달성하기 위하여, 카르본산 함유 바인더 수지와 광중합 개시제를 포함하며 알칼리 수용액에서 현상 가능한 감광성 수지 조성물에 있어서, 하기 화학식(1)로 표현되는 화합물을 함유하는 감광성 수지 조성물을 제공한다.The present invention provides a photosensitive resin composition containing a compound represented by the following formula (1) in the photosensitive resin composition comprising a carboxylic acid-containing binder resin and a photopolymerization initiator and developable in an aqueous alkali solution, in order to achieve the above object to provide.
화학식(1)Formula (1)
(여기에서 R1, R2 는 각각 같거나 서로 다른 수소, 메틸기, 에틸기, 프로필기, 페닐기로 이루어진 군에서 선택되는 것이고, R3는 수소 또는 메틸기이다. n 은 1 내지 6의 정수이다.)(Herein, R1 and R2 are each selected from the group consisting of hydrogen, methyl group, ethyl group, propyl group and phenyl group which are the same or different, and R3 is hydrogen or methyl group. N is an integer of 1 to 6.)
상기 화학식(1)의 한 분자 안에 아미노기와 한 개 이상의 에틸렌성 불포화기를 동시에 갖는 화합물은 N,N-디메틸아미노에틸(메타)아크릴레이트, N,N-디에틸아미노에틸(메타)아크릴레이트. N,N-디메틸아미노프로필(메타)아크릴레이트, N,N-디페닐아미노에틸(메타)아크릴레이트, N,N-디아미노에틸(메타)아크릴레이트로 이루어진 군에서 선택되는 화합물이 바람직하다.Compounds having an amino group and at least one ethylenically unsaturated group in one molecule of the formula (1) are N, N-dimethylaminoethyl (meth) acrylate, N, N-diethylaminoethyl (meth) acrylate. Preference is given to compounds selected from the group consisting of N, N-dimethylaminopropyl (meth) acrylate, N, N-diphenylaminoethyl (meth) acrylate, and N, N-diaminoethyl (meth) acrylate.
카르본산 함유 바인더 수지는 수 평균 분자량이 1,000 내지 30,000이고 하기 화학식(2)의 화합물 및 화학식(3), (4)의 화학식의 화합물 중에서 적어도 한가지 이상의 화합물로부터 얻은 공중합체이고, 상기 화학식(1)의 화합물은 한 분자 안에 아미노기와 한 개 이상의 에틸렌성 불포화기를 동시에 갖는 화합물이며, 광중합 개시제는 활성광에 의하여 라디칼을 생성할 수 있는 것이다.The carboxylic acid-containing binder resin has a number average molecular weight of 1,000 to 30,000 and is a copolymer obtained from at least one compound among the compounds of the formula (2) and the compounds of the formulas (3) and (4), wherein the formula (1) Is a compound having an amino group and one or more ethylenically unsaturated groups in one molecule at the same time, the photopolymerization initiator is capable of generating radicals by actinic light.
화학식(2)Formula (2)
CH2=C(R1)COOHCH2 = C (R1) COOH
화학식(3)Formula (3)
CH2=C(R1)COOR2CH2 = C (R1) COOR2
화학식(4)Formula (4)
CH2=C(R1)-R3CH2 = C (R1) -R3
(여기에서 R1은 수소 또는 메틸기이고, R2는 탄소 원자의 수가 1-8인 알킬기, 히드록시기가 치환된 알킬기, 치환되었거나 치환되지 않은 탄소 원자수가 4-12인 아릴(aryl)기 또는 아릴알킬기(arylalkyl)로 이루어진 군에서 선택되는 화합물이고, R3는 벤젠 또는 탄소 원자수가 1-8인 알킬기, 탄소 원자수가 1-8인 알콕시기, 탄소 원자수가 1-6인 알킬 치환기를 갖는 벤젠, 탄소 원자수가 1-8인 알콕시 치환기를 갖는 벤젠, 수산화기 또는 할로겐이 치환된 벤젠으로 이루어진 군에서 선택되는 화합물이다.)Wherein R1 is hydrogen or methyl, R2 is an alkyl group having 1-8 carbon atoms, an alkyl group substituted by a hydroxy group, an aryl group having 4-12 carbon atoms substituted or unsubstituted, or an arylalkyl group R3 is benzene or an alkyl group having 1-8 carbon atoms, an alkoxy group having 1-8 carbon atoms, a benzene having an alkyl substituent having 1-6 carbon atoms, or 1 carbon atom. Is a compound selected from the group consisting of benzene, hydroxyl group or halogen substituted benzene having an alkoxy substituent of -8.)
상기 화학식 (2)의 화합물은 아크릴산 또는 메타아크릴산 등을 사용할 수 있다.As the compound of Formula (2), acrylic acid or methacrylic acid may be used.
상기 화학식 (3)의 화합물은 벤질(메타)아크릴레이트, 페닐(메타)아크릴레이트, 헥실(메타)아크릴레이트, 메틸(메타)아크릴레이트, 에틸(메타)아크릴레이트 또는 2-에틸헥실(메타)아크릴레이트로 이루어진 군에서 선택되는 화합물이 바람직하며, 더욱 바람직하게는 벤질(메타)아크릴레이트 또는 페닐(메타)아크릴레이트이다.The compound of formula (3) is benzyl (meth) acrylate, phenyl (meth) acrylate, hexyl (meth) acrylate, methyl (meth) acrylate, ethyl (meth) acrylate or 2-ethylhexyl (meth) Compounds selected from the group consisting of acrylates are preferred, and more preferably benzyl (meth) acrylate or phenyl (meth) acrylate.
상기 화학식 (4)의 화합물은 스틸렌, 4-하이드록시스틸렌, 4-메틸스티렌 또는 초산비닐로 이루어진 군에서 선택되는 화합물이 바람직하다.The compound of formula (4) is preferably a compound selected from the group consisting of styrene, 4-hydroxystyrene, 4-methylstyrene or vinyl acetate.
카르본산 함유 바인더 수지와 화학식(1)의 화합물이 감광성 수지 조성물에서 차지하는 함량은 전체 성분에 대하여 0.1 내지 90 중량%이고 바람직하게는 1 내지 50 중량%이다.The content of the carboxylic acid-containing binder resin and the compound of formula (1) in the photosensitive resin composition is 0.1 to 90% by weight and preferably 1 to 50% by weight based on the total components.
이 화학식(1)의 화합물은 바인더 수지의 제조에 이용된 카르본산 함유 단량체(화학식 2, 3 및 4의 화합물)에 대하여 1 내지 100 몰% 정도 사용된다.The compound of the formula (1) is used in an amount of about 1 to 100 mol% based on the carboxylic acid-containing monomer (compounds of the formulas 2, 3 and 4) used in the preparation of the binder resin.
본 발명에 사용되는 가교성 화합물은 일반적으로 사용되는 적어도 두 개 이상의 에틸렌성 불포화기를 갖는 화합물이 사용될 수 있다.As the crosslinkable compound used in the present invention, a compound having at least two or more ethylenically unsaturated groups which are generally used may be used.
폴리에틸렌글리콜디(메타)아크릴레이트, 프로필렌글리콜디(메타)아크릴레이트, 1,3-부탄디올디(메타)아크릴레이트, 네오펜틸글리콜디(메타)아크릴레이트, 1,6-헥산디올디(메타)아크릴레이트, 트리메틸올프로판트리(메타)아크릴레이트, 펜타에리트리톨디(메타)아크릴레이트, 펜타에리트리톨트리(메타)아크릴레이트, 펜타에리트리톨테트라(메타)아크릴레이트, 디펜타에리트리톨헥사(메타)아크릴레이트, 디펜타에리트리톨펜타(메타)아크릴레이트, 디펜타에리트리톨헥사(메타)아크릴레이트, 트리메틸올프로판트리아크릴레이트로 이루어진 군에서 선택되는 화합물을 단독 또는 혼합하여 사용할 수 있고, 바람직하기로는 디펜타에리트리톨펜타(메타)아크릴레이트, 디펜타에리트리톨헥사(메타)아크릴레이트를 사용하는 것이 바람직하다.Polyethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 1,6-hexanediol di (meth) Acrylate, trimethylol propane tri (meth) acrylate, pentaerythritol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth ) Acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, trimethylolpropane triacrylate can be used alone or in combination, preferably It is preferable to use dipentaerythritol penta (meth) acrylate and dipentaerythritol hexa (meth) acrylate.
본 발명의 감광성 수지 조성물에서 가교성 화합물이 차지하는 함량은 전체 성분에 대하여 0 내지 90 중량%이고, 바람직하게는 0 내지 50 중량%이다.The content of the crosslinkable compound in the photosensitive resin composition of the present invention is 0 to 90% by weight based on the total components, preferably 0 to 50% by weight.
광중합 개시제로는 벤조페논, 아세토페논 등과 같은 벤조페논류, 비스-4,4`-디메틸아미노벤조페논, 비스-4,4`-디에틸아미노벤조페논 등과 같은 치환된 벤조페논계, 2,4,6-트리스(트리클로로메틸)-트리아진과 같은 트리아진계, N-메틸-2-벤조일메틸렌-β-나프토티아졸, 2,2-디메톡시-1,2-디페닐에탄온 등과 같은 키톤계 광중합 개시제로 이루어진 군에서 선택되는 화합물을 단독 또는 혼합하여 사용할 수 있다.Examples of the photopolymerization initiator include benzophenones such as benzophenone and acetophenone, substituted benzophenones such as bis-4,4`-dimethylaminobenzophenone, and bis-4,4`-diethylaminobenzophenone, 2,4 Triazines such as 6-tris (trichloromethyl) -triazine, ketones such as N-methyl-2-benzoylmethylene-β-naphthoazole, 2,2-dimethoxy-1,2-diphenylethanone and the like Compounds selected from the group consisting of photopolymerization initiators can be used alone or in combination.
광중합 개시제는 전체 성분에 대하여 0.01 내지 20 중량%로 사용하고, 바람직하게는 0.1 내지 10 중량%로 사용한다.The photopolymerization initiator is used in an amount of 0.01 to 20% by weight based on the total components, preferably 0.1 to 10% by weight.
용매로는 아크릴 고분자의 중합에 주로 사용되는 일반적인 것으로서 메틸에틸케톤, 사이클로헥사논, 테트라하이드로퓨란, 메틸셀로솔부, 메틸셀로솔브아세테이트, 디메틸포름아미드, 프로필렌글리콜메틸에테르아세테이트, 2-메톡시에틸에테르로 이루어진 군에서 선택되는 화합물로써 단독 또는 혼합하여 사용된다.As a solvent, it is a general thing mainly used for superposition | polymerization of an acryl polymer, methyl ethyl ketone, cyclohexanone, tetrahydrofuran, a methyl cellosol part, a methyl cellosolve acetate, dimethylformamide, a propylene glycol methyl ether acetate, 2-methoxy It is used individually or in mixture as a compound chosen from the group which consists of ethyl ether.
본 발명의 감광성 수지 조성물에서는 상기한 바와 같은 기본적인 성분 이외에도 필요에 따라 안료, 염료, 또는 제막 성능을 좋게 하기 위한 소포제, 계면활성제, 열중합 방지제, 접착력 증진제 등을 소량 첨가하여 사용할 수 있다.In the photosensitive resin composition of this invention, in addition to the basic component mentioned above, a small amount of antifoaming agent, surfactant, a thermal polymerization inhibitor, an adhesion promoter, etc. for improving pigment, dye, or film forming performance can be used as needed.
최종적으로 얻어지는 본 발명의 감광성 수지 조성물 용액은 0.1 내지 5 ㎛ 의 멤브레인 필터를 이용하여 여과한다.The photosensitive resin composition solution of this invention finally obtained is filtered using the membrane filter of 0.1-5 micrometers.
제막은 알려진 스핀 코팅, 롤 코팅, 스프레이 코팅 등의 방법을 이용할 수 있다. 바람직하게는 스핀 코팅 방법을 이용하는 것이 바람직하다.Film formation can use the method of well-known spin coating, roll coating, spray coating, etc. It is preferable to use a spin coating method.
제막용 기판으로는 유리판이나 실리콘 웨이퍼를 사용할 수 있다. 이때, 필름면의 두께는 조성물의 점도, 고형분의 농도, 제막 속도 등과 같은 제막 조건에 의하여 결정되며 본 발명의 조성물로 0.1 내지 500 ㎛ 두께의 박막을 얻을 수가 있다.As the substrate for film formation, a glass plate or a silicon wafer can be used. At this time, the thickness of the film surface is determined by the film forming conditions such as the viscosity of the composition, the concentration of the solid content, the film forming speed and the like, it is possible to obtain a thin film of 0.1 to 500 ㎛ thickness with the composition of the present invention.
얻어진 박막은 50 내지 150 ℃ 온도의 가열판 또는 오븐에서 10 초 내지 500 초 간 유지하여 전처리를 하게 된다.The obtained thin film is pretreated by maintaining for 10 seconds to 500 seconds in a heating plate or oven at a temperature of 50 to 150 ℃.
어느 정도 건조가 된 박막은 포지티브형 시험 포토마스크(TOPPAN사 제조)를 통하여 자외선을 조사한다. 이때 자외선 광원은 g, h, i 선을 함유하는 1 kW 고압 수은등을 이용하여 30 내지 500 mJ/㎠ 내외의 조도로 조사하였으며 특별한 광학 필터는 사용하지 않았다.The thin film dried to some extent is irradiated with ultraviolet rays through a positive test photomask (manufactured by TOPPAN). At this time, the ultraviolet light source was irradiated with an illuminance of about 30 to 500 mJ / cm 2 using a 1 kW high-pressure mercury lamp containing g, h, and i rays, and no special optical filter was used.
자외선이 조사된 부분은 위에서 설명한 바와 같이 조사되지 않은 부분에 비하여 용해도 차이를 보이게 된다.The UV-irradiated portion shows a difference in solubility compared to the unirradiated portion as described above.
자외선이 조사된 박막은 스프레이 법이나 담금 방식으로 20 내지 30 ℃의 온도에서 현상하였다. 이때 현상액으로는 pH 9 내지 12 의 KOH 수용액이나 0.1 내지 5 중량%의 테트라메틸암모늄하이드라이드 수용액을 이용할 수 있다.The thin film irradiated with ultraviolet rays was developed at a temperature of 20 to 30 ° C. by a spray method or a dip method. At this time, as the developer, an aqueous KOH solution having a pH of 9 to 12 or an aqueous solution of tetramethylammonium hydride of 0.1 to 5% by weight can be used.
다음은 본 발명의 이해를 돕기 위하여 바람직한 실시예들을 제시한다. 다만, 하기한 실시예들은 본 발명의 이해를 돕기 위한 것일 뿐 본 발명이 하기의 실시예들에 한정되는 것은 아니다.The following presents preferred embodiments to aid the understanding of the present invention. However, the following examples are only for the understanding of the present invention and the present invention is not limited to the following examples.
실시예 1Example 1
다음과 같은 조성으로 감광성 수지 조성물을 제조하였다.The photosensitive resin composition was manufactured with the following composition.
(1) 벤질메타아크릴레이트/메타아크릴산 공중합체 5g(1) benzyl methacrylate / methacrylic acid copolymer 5 g
(몰비=70/30, 수 평균 분자량 = 10,000)(Molar ratio = 70/30, number average molecular weight = 10,000)
(2) N.N-디메틸아미노에틸메타아크릴레이트 1.58g(2) 1.58 g of N.N-dimethylaminoethyl methacrylate
(3) 펜타에리트리톨테트라메타아크릴레이트 2g(3) 2 g of pentaerythritol tetramethacrylate
(4) 비스-4,4`-디에틸아미노벤조페논 2g(4) 2 g of bis-4,4`-diethylaminobenzophenone
(5) 프로필렌글리콜메틸에테르아세테이트 40g(5) 40 g of propylene glycol methyl ether acetate
제조한 조성물 용액을 0.2 ㎛ 테프론 멤브레인 필터를 이용하여 여과하였다. 스핀 코팅 방식을 이용하여 감광성 수지 조성물을 유리판 위에 도포한 다음 가열판 위에 놓고 80 ℃의 온도에서 3 분간 유지하였다. 이어서 접촉 방식으로 포지티브형 시험 포토마스크(TOPPAN사 제조)를 박막 위에 올려놓고 자외선을 조사하였다. 이때 자외선 광원은 g, h, i 선을 모두 함유하는 1 kW 고압 수은 등을 이용하였으며, 100 mJ/㎠의 조도로 조사하였고, 이때 특별한 광학 필터는 사용하지 않았다. 자외선이 조사된 박막을 pH 10.5의 KOH 수용액 현상 용액에 2 분 동안 담구어서 현상하였다. 박막이 입혀진 유리판을 증류수를 이용하여 씻어준 다음 질소 가스를 불어 건조한 다음 250℃의 가열 오븐에서 1 시간 동안 가열하여 주었다. 얻어진 필름의 두께는 4 ㎛ 이었으며, 선 폭 및 선 간격 7 ㎛의 선명한 패턴을 얻을 수 있었다.The prepared composition solution was filtered using a 0.2 μm Teflon membrane filter. The photosensitive resin composition was applied on a glass plate by using a spin coating method, and then placed on a heating plate and maintained at a temperature of 80 ° C. for 3 minutes. Subsequently, a positive test photomask (manufactured by TOPPAN) was placed on the thin film by a contact method and irradiated with ultraviolet rays. In this case, a 1 kW high-pressure mercury lamp containing g, h, and i rays was used as the ultraviolet light source, and irradiated with an illuminance of 100 mJ / cm 2, and no special optical filter was used. The thin film irradiated with ultraviolet rays was developed by immersing in a KOH aqueous solution developing solution of pH 10.5 for 2 minutes. The glass plate coated with the thin film was washed with distilled water, dried with blowing nitrogen gas, and heated in a heating oven at 250 ° C. for 1 hour. The thickness of the obtained film was 4 micrometers, and the clear pattern of line width and line spacing of 7 micrometers was obtained.
실시예 2Example 2
실시예 1과 같은 방법으로 다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.In the same manner as in Example 1, a photosensitive resin composition having the following composition was prepared.
(1) 벤질메타아크릴레이트/메타아크릴산 공중합체 5g(1) benzyl methacrylate / methacrylic acid copolymer 5 g
(2) N,N-디메틸아미노에틸메타아크릴레이트 1.26g(2) 1.26 g of N, N-dimethylaminoethyl methacrylate
(3) 펜타에리트리톨테트라메타아크릴레이트 3g(3) 3 g of pentaerythritol tetramethacrylate
(4) 비스-4,4`-디에틸아미노벤조페논 2g(4) 2 g of bis-4,4`-diethylaminobenzophenone
(5) 프로필렌글리콜메틸에테르아세테이트 40g(5) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성하여 얻었다.The film was formed and obtained by the method similar to Example 1.
이렇게 하여 얻어진 필름은 노광량 100 mJ/㎠, 필름 두께 3.5 ㎛ 그리고 분해능이 7 ㎛이었다.The film thus obtained had an exposure dose of 100 mJ / cm 2, film thickness of 3.5 μm, and resolution of 7 μm.
실시예 3Example 3
실시예 1과 같은 방법으로 다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.In the same manner as in Example 1, a photosensitive resin composition having the following composition was prepared.
(1) 벤질메타아크릴레이트/메타아크릴산 공중합체 5g(1) benzyl methacrylate / methacrylic acid copolymer 5 g
(2) N,N-디메틸아미노에틸메타아크릴레이트 0.787g(2) 0.787 g of N, N-dimethylaminoethyl methacrylate
(3) 펜타에리트리톨테트라메타아크릴레이트 4g(3) 4 g of pentaerythritol tetramethacrylate
(4) 비스-4,4`-디에틸아미노벤조페논 2g(4) 2 g of bis-4,4`-diethylaminobenzophenone
(5) 프로필렌글리콜메틸에테르아세테이트 40g(5) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성하여 얻었다.The film was formed and obtained by the method similar to Example 1.
이렇게 하여 얻어진 필름은 노광량 150 mJ/㎠, 필름 두께 3.7 ㎛ 그리고 분해능이 8 ㎛이었다.The film thus obtained had an exposure dose of 150 mJ / cm 2, a film thickness of 3.7 μm, and a resolution of 8 μm.
실시예 4Example 4
실시예 1과 같은 방법으로 다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.In the same manner as in Example 1, a photosensitive resin composition having the following composition was prepared.
(1) 벤질메타아크릴레이트/메타아크릴산 공중합체 5g(1) benzyl methacrylate / methacrylic acid copolymer 5 g
(2) N,N-디메틸아미노에틸메타아크릴레이트 0.157g(2) 0.157 g of N, N-dimethylaminoethyl methacrylate
(3) 펜타에리트리톨테트라메타아크릴레이트 5g(3) 5 g of pentaerythritol tetramethacrylate
(4) 비스-4,4`-디에틸아미노벤조페논 2g(4) 2 g of bis-4,4`-diethylaminobenzophenone
(5) 프로필렌글리콜메틸에테르아세테이트 40g(5) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성하여 얻었다.The film was formed and obtained by the method similar to Example 1.
이렇게 하여 얻어진 필름은 노광량 150 mJ/㎠, 필름 두께 3.8 ㎛ 그리고 분해능이 9 ㎛이었다.The film thus obtained had an exposure dose of 150 mJ / cm 2, a film thickness of 3.8 μm, and a resolution of 9 μm.
실시예 5Example 5
실시예 1과 같은 방법으로 다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.In the same manner as in Example 1, a photosensitive resin composition having the following composition was prepared.
(1) 벤질메타아크릴레이트/메타아크릴산 공중합체 5g(1) benzyl methacrylate / methacrylic acid copolymer 5 g
(몰비 = 50/50, 수 평균 분자량 = 15,000)(Molar ratio = 50/50, number average molecular weight = 15,000)
(2) N,N-디메틸아미노에틸아크릴레이트 5g(2) 5 g of N, N-dimethylaminoethyl acrylate
(3) 비스-4,4`-디에틸아미노벤조페논 3g(3) 3 g of bis-4,4`-diethylaminobenzophenone
(4) 프로필렌글리콜메틸에테르아세테이트 40g(4) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성한 후 100 mJ/㎠의 조도로 노광한 후 현상하였다. 얻어진 필름의 두께는 2.8 ㎛ 이었으며, 선 폭 및 선 간격 7 ㎛ 의 패턴을 선명하게 얻을 수 있었다.After the film was formed in the same manner as in Example 1, the film was exposed to light at an intensity of 100 mJ / cm 2 and then developed. The thickness of the obtained film was 2.8 micrometers, and the pattern of the line width and the line spacing of 7 micrometers was obtained clearly.
실시예 6Example 6
실시예 1과 같은 방법으로 다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.In the same manner as in Example 1, a photosensitive resin composition having the following composition was prepared.
(1) 에틸메타아크릴레이트/메틸메타아크릴레이트/아크릴산 공중합체 (몰비 = 40/30/30, 수 평균 분자량 = 12,500) 5g(1) ethyl methacrylate / methyl methacrylate / acrylic acid copolymer (molar ratio = 40/30/30, number average molecular weight = 12,500) 5 g
(2) N,N-디메틸아미노에틸아크릴레이트 2.85g(2) 2.85 g of N, N-dimethylaminoethyl acrylate
(3) 펜타에리트리톨테트라메타아크릴레이트 2g(3) 2 g of pentaerythritol tetramethacrylate
(4) 비스-4,4`-디에틸아미노벤조페논 3g(4) 3 g of bis-4,4`-diethylaminobenzophenone
(5) 프로필렌글리콜메틸에테르아세테이트 40g(5) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성한 후 100 mJ/㎠의 조도로 노광한 후 현상하였다. 얻어진 필름의 두께는 3.1 ㎛ 이었으며, 선 폭 및 선 간격 6 ㎛ 의 패턴을 선명하게 얻을 수 있었다.After the film was formed in the same manner as in Example 1, the film was exposed to light at an intensity of 100 mJ / cm 2 and then developed. The thickness of the obtained film was 3.1 micrometers, and the pattern of the line width and the line spacing of 6 micrometers was clearly obtained.
실시예 7Example 7
실시예 1과 같은 방법으로 다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.In the same manner as in Example 1, a photosensitive resin composition having the following composition was prepared.
(1) 에틸메타아크릴레이트/메틸메타아크릴레이트/아크릴산 공중합체(1) ethyl methacrylate / methyl methacrylate / acrylic acid copolymer
(몰비 = 40/30/30, 수 평균 분자량 = 12,500) 5g(Molar ratio = 40/30/30, number average molecular weight = 12,500) 5 g
(2) N,N-디메틸아미노에틸아크릴레이트 2.70g(2) 2.70 g of N, N-dimethylaminoethyl acrylate
(3) 펜타에리트리톨테트라메타아크릴레이트 2g(3) 2 g of pentaerythritol tetramethacrylate
(4) 비스-4,4`-디에틸아미노벤조페논 3g(4) 3 g of bis-4,4`-diethylaminobenzophenone
(5) 프로필렌글리콜메틸에테르아세테이트 40g(5) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성한 후 100 mJ/㎠의 조도로 노광한 후 현상하였다. 얻어진 필름의 두께는 3.1 ㎛ 이었으며, 선 폭 및 선 간격 7 ㎛ 의 패턴을 선명하게 얻을 수 있었다.After the film was formed in the same manner as in Example 1, the film was exposed to light at an intensity of 100 mJ / cm 2 and then developed. The thickness of the obtained film was 3.1 micrometers, and the pattern of the line width and the line spacing of 7 micrometers was clearly obtained.
비교예 1Comparative Example 1
다음과 같은 조성을 갖는 감광성 수지 조성물을 제조하였다.The photosensitive resin composition which has the following composition was manufactured.
(1) 벤질메타아크릴레이트/메타아크릴산 공중합체 5g(1) benzyl methacrylate / methacrylic acid copolymer 5 g
(몰비 = 70/30, 수 평균 분자량 = 10,000)(Molar ratio = 70/30, number average molecular weight = 10,000)
(2) 펜타에리트리톨테트라(메타)아크릴레이트 5g(2) 5 g of pentaerythritol tetra (meth) acrylate
(3) 비스-4,4`-디에틸아미노벤조페논 2g(3) 2 g of bis-4,4`-diethylaminobenzophenone
(4) 프로필렌글리콜메틸에테르아세테이트 40g(4) 40 g of propylene glycol methyl ether acetate
실시예 1과 같은 방법으로 필름을 형성한 후 100 mJ/㎠의 조도로 노광한 후 현상하였다. 이렇게 하여 제조된 패턴은 유실되었다.After the film was formed in the same manner as in Example 1, the film was exposed to light at an intensity of 100 mJ / cm 2 and then developed. The pattern thus produced was lost.
비교예 2Comparative Example 2
비교예 1과 같은 조성을 갖는 감광성 수지 조성물을 제조한 후, 실시예 1과 같은 방법으로 필름을 형성한 후 150 mJ/㎠의 조도로 노광한 후 현상하였다. 얻어진 필름의 두께는 3.0 ㎛ 이었으며, 선 폭 및 선 간격 20 ㎛ 의 패턴을 얻을 수 있었다.After preparing the photosensitive resin composition which has a composition similar to the comparative example 1, after forming a film by the method similar to Example 1, it developed after exposing to the roughness of 150 mJ / cm <2>. The thickness of the obtained film was 3.0 micrometers, and the pattern of 20 micrometers of line widths and line spaces was obtained.
비교예 3Comparative Example 3
비교예 1과 같은 조성을 갖는 감광성 수지 조성물을 제조한 후, 실시예 1과 같은 방법으로 필름을 형성한 후 200 mJ/㎠의 조도로 노광한 후 현상하였다. 얻어진 필름의 두께는 3.8 ㎛ 이었으며, 선 폭 및 선 간격 10 ㎛의 패턴을 얻을 수 있었다.After preparing the photosensitive resin composition which has a composition similar to the comparative example 1, after forming a film by the method similar to Example 1, it developed after exposing to the roughness of 200 mJ / cm <2>. The thickness of the obtained film was 3.8 micrometers, and the pattern of the line width and the line spacing 10 micrometers was obtained.
본 발명에 따라 제조된 실시예 1 내지 7 까지의 경우 한 분자 안에 아미노 기와 한 개 이상의 에틸렌성 불포화기를 동시에 갖는 화합물인 N,N-디에틸아미노에틸메타아크릴레이트를 사용하여 감광성 수지 조성물을 제조한 경우, 그 선 폭 및 선 간격이 6 내지 9 ㎛로 미세한 분해능을 얻을 수가 있었다. 그러나, N,N-디에틸아미노에틸메타아크릴레이트를 사용하지 않은 비교예 1 내지 3의 경우 노광량에 따라 패턴이 유실되거나 10 ㎛ 이상의 분해능을 가지므로 실시예에 따른 감광성 수지 제조 방법보다 그 분해능이 현저히 떨어질 뿐만 아니라 그 막두께에 있어서도 2.8 내지 4 ㎛의 균일하고 얇은 막 두께를 얻을 수 있었으나, 비교예의 경우 그 두께가 3.0 ㎛ 이상으로 막 두께가 두꺼운 것이 제조되었다.In Examples 1 to 7 prepared according to the present invention, a photosensitive resin composition was prepared using N, N-diethylaminoethyl methacrylate, which is a compound having an amino group and at least one ethylenically unsaturated group simultaneously in one molecule. In this case, the fine resolution was obtained with the line width and the line spacing being 6 to 9 mu m. However, in Comparative Examples 1 to 3, in which N, N-diethylaminoethyl methacrylate was not used, the pattern was lost or had a resolution of 10 μm or more depending on the exposure amount, so that the resolution was higher than that of the photosensitive resin manufacturing method according to the embodiment. Not only was it remarkably dropped, but also a uniform and thin film thickness of 2.8 to 4 µm was obtained in the film thickness. However, in the case of the comparative example, a thick film having a thickness of 3.0 µm or more was produced.
Claims (10)
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