KR20000042476A - Device for testing multi-bit data - Google Patents

Abstract

PURPOSE: A testing device of multi-bit data is provided to secure a reliable test by receiving multi-inputs in a parallel with a dynamic logic and by sending outputs in three states with a high-impedance buffer. CONSTITUTION: An input/output line is made in a parallel by using a dynamic logic. The input/output line is accessed in a NMOS combined in parallel at high and accessed in a PMOS combined in parallel at low. A pull-up is low in a high data and a pull-down is high in a low data. Finally, a dq output of a data output buffer is outputted in three kinds(high, low, high-impedance). Thereby, a pass data and a fail data are distinguished by outputting the high-impedance at fail. And an error generated by the fail is corrected by accessing the read data line in the PMOS and the NMOS in parallel.

Description

Multibit Data Test Device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-bit data test apparatus for semiconductor memory devices, and in particular, to ensure a robust test by accepting multi-inputs in parallel using dynamic logic and outputting the output in three states using a high-impedance buffer.

The prior art uses an Exclusive-OR method as shown in FIG. 1 to receive inputs of eight input / output lines, and high when Pass and low when Fail. Export Low. Note that Exclusive-Or outputs Low if the two inputs are the same and High if it is incorrect.

In a conventional circuit, when the stored write data rwd0 _- 10b and rwd0 _- 10 The couple carried on the same data. The remaining _{rwd1 - 10b / rwd1 - 10,} rwd2 - 10b / rwd2 - 10, rwd3 - 10b / rwd3 - 10 also carried on such data (where the comparator sseojun when read after write the same data to the eight input / output line data To compare).

Since the same data is written, each of the four pairs of inputs is compared with an exclusive ora, and the pairs are output low if they are equal and high if they are different.

The present invention presupposes that the same data is written in all rwds and then compared. Therefore, if the high data is written and read in all rwds (data is written correctly, that is, Pass), four exclusive Output nodes 1, 2, 3, and 4 that have passed through are all low.

Nodes 3 and 4 are low, so node 6 through Noah gate NO4 is high, and nodes 1 and 2 are low, and node 5 through Noah gate NO3 is high. )

Since nodes 5 and 6 are both high, node 7 passing through the NAND gate NA2 becomes low.

Normally, the comparator used for this test has nothing to do with normal read / write operation. When POM P1 and NMOS N2 are activated when a signal called enableb (a signal activated during test) is activated low, Open Therefore, if node 7 is low, the output is high by opening PMOS P2 and closing NMOS N1.

This works the same when all are written low.

If 8 If (If a low (Low) to Leakage has blossomed loss data to gave written the high (High) cell), one of the inputs are Fail, e.g. inde both the high (High) rwd2 _- 10b goes low (Low ), Node 3 is high by an exclusive ora.

Noah gate NO4 outputs a low output regardless of the other input if any one of the inputs is high, so node 6 becomes low and NAND gate NA2 is similarly connected to any one of the inputs. If low, node 7 goes high because it outputs high regardless of other inputs.

Since enableb is low, PMOS P1 and NMOS N2 are open, so the output is low.

3, the data output buffer is connected with the comparator.

During the normal read operation, enableb is high, so data enters the normal data pin.In the test condition where the comparator of the present invention is used, enableb is activated low, so T1, Transmission Tr. Can't come in.

The data output buffer enable signal doe becomes high in a read operation.

The x4 _- x8 _- x16 signal is a data width (x4 / x8 / x16 mode) signal and is a signal for activating or deactivating the data output buffer according to the needs of the configuration when using multiple comparators of the present invention. In this case, it is considered high.

As described above, Node 10 is high when the test passes and Node 10 is low when the test fails.

First, if high, the node 12 which has passed through the NAND gate NR3 becomes low.

The Dout Buffer uses a pull-up transistor (P17) and a pull-down transistor (N17) to charge and discharge to the outside, using an external power supply voltage (Vext: voltage higher than the internal power supply) and a level shifter to prevent the current path from Vext to Vint. (500, 501) is used.

The node pu is determined by the difference between the voltages applied to the gates of the nodes N13 and N14 while the node 12 is low and the node 13 is high.

In this case, since node 12 is low and node 13 is high, N13 is subtracted more than N14, and node pu becomes low.

Similarly, since node 10 is high, node 11 goes low.

Since node 14 goes high and node 15 goes low after NAND gate NA4, node 16 goes high according to the same principle.

Eventually, node pu and node pd go low, opening P17, a pull-up transistor, and N17, a pull-down transistor, closing, bringing high to dq.

In the same way, if node 10 is low, node pu goes high to close P17, and node pd also goes high to open N17, resulting in a low.

After all, the conventional scheme is to determine the pass only when the first comparison by the exclusive ora is the same, even if the data written is all high or all low, the output data of dq is high. to be.

If both inputs are Fail in any of 100, 101, 102, and 103, it is recognized as the same data due to the characteristic of Exclusive-Or.

The present invention was devised to solve the problems of the prior art as described above, and the input / output lines are accepted in parallel using dynamic logic, and the PMOS connected in parallel when N is high, and PMOS connected in parallel when high. By connecting to the high data, the pull-up is pulled low and the pull-down is pulled high for the low data, which finally makes the output of the data output buffer three states (high, low, high-impedance). Separate.

1 is a comparator using an Exclusive-OR method according to the prior art.

2 is a comparator using a dynamic logic method according to an embodiment of the present invention.

3 is a multi-data test circuit diagram according to the prior art.

4 is a multi-data test block diagram using dynamic logic according to an embodiment of the present invention.

5 is a multi-data test circuit diagram using dynamic logic according to an embodiment of the present invention.

<Explanation of symbols for main parts of drawing>

100, 101, 102, 103: Exclusive-Or 200, 201: Dynamic logic

1000: comparator 1001: switch

300: pull-up detection unit 301: pull-down detection unit

doe: Data output buffer enable signal

x4 _- x8 _- x16: This signal is used to enable or disable the data output buffer according to the needs of the configuration when using multiple comparators as data width (x4 / x8 / x16 mode) signals.

The multi-bit data test apparatus of the present invention for achieving the above object is a comparator for generating an output signal for determining a pass or fail by comparing the data coming through the data input line;

A switch unit connected to an output terminal of the comparator to distinguish between normal operation and test operation;

And a buffer unit connected to the output terminal of the switch unit to output a high or low signal when passing and a high-impedance signal when failing.

The above and other objects and features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

As shown in Figure 2, the input and output lines are accepted in parallel using dynamic logic, and when connected to NMOS connected in parallel when high, and connected to PMOS connected in parallel when pulled, pull-up is taken low when the data is high and low. For data, pull down to high, finally outputting the dq output of the data output buffer to three (high, low, high-impedance).

This way, you can see if the data came out exactly as you wrote it, and if it fails, you can distinguish it from the pass data by exporting the output to high-impedance.

You can also connect the read data lines in parallel to each PMOS and NMOS gate to catch errors caused by the failure of two pairs of inputs / outputs.

As shown in FIG. 4, the present invention includes a comparator using dynamic logic, a switch that divides normal operation from a test operation, and a data output buffer.

The comparator receives the activation signal and opens P3, N3, P4 and N4, and if it is high according to the data coming into the rwd line, opens the pull-up detector to open the node pu of the data output buffer and close the node pd to get high. If low, open pull-down detector to close node pu and open node pd to export low.

Note that either one of nodes pu and pd is activated, and either high or low is sent to dq by P18 and N18.

If any other data (failed data) enters the rwd line, which should be the same data, both the transistor of the pull-up detector and the transistor of the pull-down detector open, so that both node pu and node pd of the data output buffer are activated, High)-Impedance is output.

Reference is made to FIG. 5 to describe the basic operation of the invention.

Once enableb is high in normal operation, P3 and N4 are turned on to hold node 8 high and node 9 low.

However, the transfer transistors T2 and T4 are closed so that they cannot be transferred to nodes 10 and 17. Instead, T3 and T5 are turned on and normal data comes in.

If the normal data is high, node 10 is high and node 17 is low.

If doe and x4 _- x8 _- x16 are already high, node 12 is low and node 13 is high by NAND gate NA3.

By the operation of the level shifter described above, N13 is taken out more than N14, so pu becomes low, turning on P17 and turning off N18.

Since node 17 is low, node 14 is high and node 15 is low by NAND gate NA4. Therefore, since N16 subtracts more than N15, node 16 goes high and eventually node pd goes low, turning off N17 and turning on P18.

Eventually, P17 and P18 are turned on, and N17 and N18 are turned off, resulting in high data at dq.

Even when normal data is low, node 10 is low and node 17 is high, so node pu becomes high and node pd becomes high by the same principle. (Low) The data comes out.

The test operation is as follows.

Once enableb is activated low, transfer transistors T2 and T4 open, and T3 and T5 close.

Nodes 8 and 9 are set to High and Low by latching IN4, IN5, IN6, and IN7, respectively, and P3 and N4 are turned off and P4 and N3 are turned on.

If all data in rwd are high, all of N5 to N12 are turned on, and P5 to P12 are turned off so that node 8 has a low and node 9 has a originally latched low.

Subsequent operations are the same as when the nodes 10 and 17 are high and low in the normal operation described above, respectively, so that the node pu becomes low and the node pd becomes high so that dq High is sent out.

After all, the data written is high and there is no changed data, so the data that comes out is also high.

When all the data of rwd are low, P5 to P12 are turned on and node 9 is high, and N5 to N12 are all turned off, and the data latched by IN4 and IN5 is high. .

Therefore, node 10 has a low and node 17 has a high, and in the normal operation, node 10 sends low data to dq in the same manner as when normal data has a low.

Let's look at the failed operation.

Since P5 to P12 and N5 to N12 are connected in parallel, either one of a pair of rwds fails or a pair of rwds fail simultaneously as in Exclusive-Or.

The rwd line is connected to the PMOS and NMOS of the CMOS, so if at least one type of fail occurs, at least one of P5 to P12 and at least one of N5 to N12 is turned on so that nodes 8 and 9 are low and high ( High), node 10 goes high, and node 17 goes high.

So node pu goes low to turn on P17 and turns off N18, likewise node 16 goes low, pd goes high, turns on N17 and turns off P18, eventually dq Becomes a high-impedance state.

Therefore, the comparator and data output buffer scheme of the present invention is written in the scheme that writes high data to this dq at test and writes one data to all the rwd lines coming into the comparator through the data input buffer and then reads them and compares the data. The output to dq can be monitored in three states: high, low and high-impedance.

You can also view the data you have written on the pass, and detect failures at the same time on a pair of rwds, as in Exclusive-Or.

It also accepts rwd input in parallel, so if more conditions allow it, it can accept more input.

As described above, the present invention can accurately determine the correct data during the test by completely solving the problems of the conventional exclusive-ora method, so that a large number of bits of data can be tested at the same time. It uses dynamic logic instead of the sieve-ora method to receive multiple inputs in parallel and uses a high-impedance buffer to export the output in three states, ensuring a robust test and reducing test time.

Preferred embodiments of the present invention are for the purpose of illustration and various modifications, changes, substitutions and additions are possible to those skilled in the art through the spirit and scope of the present invention as set forth in the appended claims.

Claims (3)

In a semiconductor memory device, A comparator for comparing output data through a data input line and generating an output signal for determining a pass or a fail; A switch unit connected to an output terminal of the comparator to distinguish between normal operation and test operation; And a buffer unit connected to the switch unit output terminal to output a high or low signal when passing and a high-impedance signal when failing. The method of claim 1, The comparator precharges a random node to high and low in normal operation and operates according to the data input during the test operation. A pull-up and pull-down detector in which NMOS or PMOS is turned on in accordance with the potential level of the input data connected in parallel to the dynamic logic output terminals; And a latch unit connected to the pull-up and pull-down detector output terminals and latching an initial precharge value to prevent floating caused when only one of the NMOS and PMOS turned on according to input data is turned on. Data testing device. The method of claim 1, And the buffer unit includes PMOS and NMOS connected in series to pull-up transistors and pull-down transistors to create three output states of high, low, and high-impedance.