KR20000009238A - Deposition apparatus and method for manufacturing metal film of semiconductor device - Google Patents

Abstract

PURPOSE: A deposition apparatus for manufacturing a metal film of a semiconductor device capable of preventing a contacting resistance from increasing, manufacturing a metal film used for a diffusion barrier film, and improving uniformity of the metal film and a method thereof, are provided. CONSTITUTION: The deposition apparatus for manufacturing a metal film of a semiconductor device, the apparatus comprising: a chamber(100) having a mounting portion(300), a semiconductor substrate(200) is mounted at the mounting portion(300); a target portion(400) facing the mounting portion(300) of the chamber(100); a discharge hole for discharging gas in the chamber(100); and a gas discharge assistance means(510) introduced in the chamber(100) in a front direction of the discharge hole for assisting the gas discharge.

Description

Evaporation equipment used to manufacture metal film of semiconductor device and metal film manufacturing method using same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a deposition apparatus used for manufacturing a metal film of a semiconductor device and a metal film production method using the same.

As semiconductor devices are highly integrated and miniaturized, a wiring process for electrically connecting elements such as transistors or capacitors and the like has become important. In particular, as a high performance or high speed process is required in a logic semiconductor device such as a central processing unit (CPU), an improvement in characteristics of the wiring, for example, electrical resistance This is required.

One of the factors of the increase in the electrical resistance mentioned above is the occurrence of defects at the interface between the wiring and the semiconductor substrate or another conductive film. Examples of defects generated at the interface include junction spiking or silicon nodule due to a reaction of a metal film such as an aluminum (Al) film used as a wiring and silicon. have.

In order to prevent the occurrence of such interface defects, a diffusion barrier layer or the like is introduced at the interface. For example, a metal film such as a double film of a titanium (Ti) film and a titanium nitride film is formed and used as the diffusion barrier film. Such a diffusion barrier film prevents material movement between the aluminum film and the semiconductor substrate to suppress defects as described above.

1 is a cross-sectional view schematically illustrating a problem of a conventional metal film production method.

Specifically, an insulating film 50 having a contact hole is formed on the semiconductor substrate 10 on which a lower structure such as a transistor structure or the like is formed. In this case, a drain or source region 15, a gate electrode 20, and the like are formed in the semiconductor substrate 10.

The gate electrode 20 is formed of a doped polycrystalline silicon layer 21, a silicide layer 23, or the like. A gate oxide film 11 is formed below the gate electrode 20, and the sidewall of the gate electrode 20 is covered with a spacer 25.

A cobalt silicide (CoSi _x ) film 17 is formed on the semiconductor substrate 100 in the drain or source region 15 to reduce the contact resistance. As a result, the contact hole exposes the silicide layer 17. The contact hole is filled with a conductive plug 40 such as a tungsten silicide (WiS _x ) film. Wiring, for example, an aluminum film, is in contact with the conductive plug 40.

In order to improve the contact resistance between the metal film such as the conductive plug 40 and the like and the lower semiconductor substrate 10 or the cobalt silicide film 17, a metal film used as the diffusion barrier film 30 is introduced at the interface thereof. . For example, a double film of the titanium film 31 and the titanium nitride film 35 is introduced into the diffusion barrier film 30. The diffusion barrier film 30 prevents the interface failure as described above.

In this case, the process of forming the diffusion barrier layer 30 is generally performed in deposition equipment such as a sputtering apparatus. For example, the diffusion barrier layer 30 is formed by mounting the semiconductor substrate 10, which is introduced into the sputtering equipment in approximately 25 lots, one by one to the loader part of the process chamber. . That is, a single sheet process is used.

In more detail, when the first semiconductor substrate 10 of the lot is mounted on the mounting portion, the titanium film 31 is deposited on the first semiconductor substrate 10. Subsequently, the deposition is continued while supplying a reaction gas including nitrogen gas (N ₂ ) to the chamber, and a titanium nitride film 33 is deposited on the titanium film 31. Thereafter, the semiconductor substrate 10 is detached from the mounting portion and the next second semiconductor substrate is mounted.

In the process of depositing a metal film used as a diffusion barrier film in this manner, a high resistance material film, for example, an undesired titanium nitride film 35 or the like, is formed below the metal film, for example, the titanium film 31. Can be formed. In the case where the titanium film 31 and the titanium nitride film 33 are formed as the diffusion barrier film 30, for example, the titanium film (B) may be formed by the residual nitrogen gas used to form the titanium nitride film 33. 31) Undesired titanium nitride film 35 may be formed below.

In more detail, the nitrogen gas used to form the titanium nitride film 33 on the first semiconductor substrate 10 may remain in the chamber. Accordingly, when the titanium film 31 is next formed on the second semiconductor substrate to be mounted on the mounting portion, an unwanted titanium nitride film 35 is formed under the titanium film 31 by the remaining nitrogen gas. Can be formed.

Undesired titanium nitride film 35 as described above may result in an increase in contact resistance. That is, the unwanted titanium nitride film 35 exhibits higher resistance than the titanium film 31 and the like. Thus, the resistance is increased in addition to the resistance by the diffusion barrier film 30. That is, the contact resistance is increased.

This increase in contact resistance greatly affects the high operating speeds required for high performance of semiconductor devices, particularly logic semiconductor devices such as CPUs. That is, an increase in contact resistance may be a factor such as a decrease in operating speed or poor operation.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a deposition apparatus for manufacturing a semiconductor device capable of preventing an increase in contact resistance, manufacturing a metal film used as a diffusion barrier film, and improving uniformity of the metal film. .

Another technical problem to be solved by the present invention is to prevent the increase of contact resistance by using the deposition apparatus for manufacturing a semiconductor device, to manufacture a metal film used as a diffusion barrier film, and to improve the uniformity of the metal film. It is to provide a metal film production method.

1 is a cross-sectional view schematically illustrating a problem of a conventional metal film production method.

FIG. 2 is a cross-sectional view schematically illustrating a deposition apparatus used for manufacturing a metal film of a semiconductor device according to a first embodiment of the present invention.

3 is a perspective view schematically showing the gas discharge assistance means of FIG.

4 is a graph schematically illustrating a change in contact resistance of a metal film formed according to the order in which the semiconductor substrate is mounted in order to explain the influence of the residual reaction gas on the metal film.

5 and 6 are cross-sectional views schematically illustrating a deposition apparatus used for manufacturing a metal film of a semiconductor device according to a third embodiment of the present invention.

7 and 8 are perspective views schematically illustrating the collimator of FIGS. 5 and 6.

※ Brief description of the main symbols in the drawings

100; Chamber 200; Semiconductor substrate

300; Loader part 400; Target part

510; Gas exhaust assisting means 570; Collimator

One aspect of the present invention for achieving the above technical problem is a chamber having a mounting portion on which a semiconductor substrate is mounted, a target part introduced opposite to the mounting portion, and discharging gas in the chamber. And a gas discharge assisting means, which is introduced into the chamber in front of the outlet and the outlet, to assist the gas discharge.

The target portion uses a titanium target. A conical collimator may be further included between the target portion and the mounting portion to impart directionality to material movement from the target portion to the semiconductor substrate. The conical collimator has a wide circumference in a direction opposite to the target portion and a narrow circumference in a direction opposite to the semiconductor substrate to focus the moving material on the semiconductor substrate. A tube may be focused on the conical collimator to further provide an auxiliary collimator, etc. to impart linearity to the movement of the material.

The gas contains nitrogen gas. The outlet is arranged at the rear of the mounting portion and the gas discharge assisting means is introduced between the mounting portion and the outlet. A fan is used as the gas discharge assisting means.

Another aspect of the present invention for achieving the above technical problem is a chamber having a mounting portion on which a semiconductor substrate is mounted, a target portion introduced to face the mounting portion and introduced between the target portion and the semiconductor substrate and the target portion. And a bottomed cone-shaped collimator or the like that provides directionality to mass transfer from the semiconductor substrate to the semiconductor substrate.

The conical collimator has a wide circumference in a direction opposite to the target portion and a narrow circumference in a direction opposite to the semiconductor substrate to focus the moving material on the semiconductor substrate. It may further include an auxiliary collimator made of a tube focused on the top of the conical collimator to give a straightness to the movement of the material.

One aspect of the present invention for achieving the above technical problem is a chamber having a mounting portion on which a semiconductor substrate is mounted, a target portion introduced opposite to the mounting portion, an outlet for discharging gas in the chamber, and the front of the outlet A first semiconductor substrate having an insulating film having a contact hole for exposing a part of the first semiconductor substrate is mounted to the mounting portion of the deposition apparatus including a gas discharge assisting means introduced into the chamber to assist gas discharge; .

Material is moved from the target portion to form a metal film covering the exposed first semiconductor substrate. The forming of the metal film forms a titanium film on the exposed first semiconductor substrate. A reaction gas containing nitrogen gas is supplied onto the titanium film to form a titanium nitride film. The titanium film and the titanium nitride film are used as the diffusion barrier film.

The forming of the metal film is performed by a sputtering method using an undercut cone-shaped collimator that is introduced between the target portion and the mounting portion to impart direction to material movement from the target portion to the semiconductor substrate. The conical collimator has a wide circumference in a direction opposite to the target portion and a narrow circumference in a direction opposite to the semiconductor substrate to focus the moving material on the semiconductor substrate. The sputtering method may further use an auxiliary collimator consisting of a tube focused on the conical collimator to impart straightness to the movement of the material.

The first semiconductor substrate is detached from the mounting portion, the gas discharge assisting means is operated, and the gas is discharged. In the discharging of the gas, the nitrogen gas remaining in the forming of the titanium nitride film is discharged. The second semiconductor substrate is mounted on the mounting portion from which the first semiconductor substrate is separated.

According to the present invention, it is possible to prevent the increase of contact resistance and to manufacture a metal film used as a diffusion barrier film, and to improve the uniformity of the metal film formed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the thickness of the film and the like in the drawings are exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings mean the same elements. Also, when a film is described as being on or in contact with another film or semiconductor substrate, the film may be in direct contact with the other film or semiconductor substrate, or a third film is interposed therebetween. It may be done.

FIG. 2 is a cross-sectional view schematically illustrating a deposition apparatus used for manufacturing a metal film of a semiconductor device according to a first embodiment of the present invention, and FIG. 3 schematically shows the gas discharge assisting means 510 of FIG. It is a perspective view shown.

Specifically, the deposition apparatus according to the first embodiment of the present invention includes a loader part 300 in which the semiconductor substrate 200 is mounted in the chamber 100 as shown in FIG. 5. In addition, a target part 400 is introduced to face the mounting part 300. For example, a target portion 400 including a titanium target is introduced.

Material particles, for example, titanium particles, are separated from the target part 400 by argon (Ar) supplied to the chamber 100, that is, sputtered to move on the semiconductor substrate 200. At this time, the separation of the material particles by the argon is made by the charging of the target unit 400 by a DC power part (450). As a result, a material film, for example, a titanium based film, for example, a titanium film, is formed on the semiconductor substrate 200.

A discharge port 600 is formed on the wall surface of the chamber 100 at the rear end of the mounting portion 300. The outlet 600 discharges the reaction gas used when the material film is formed to maintain a vacuum in the chamber 100. That is, a diffusion pump or the like is connected to the discharge port to maintain a vacuum in the chamber 100. For example, after the semiconductor substrate 200 is separated after the forming of the material film, the diffusion pump may be operated to deposit residual gas of the reaction gas, for example, nitrogen gas used to deposit a titanium nitride film. Discharge.

On the other hand, the process of forming a material film etc. in the semiconductor substrate 200 by the high integration of a semiconductor device etc. is progressing by the single-leaf type. That is, the semiconductor substrate 100 is mounted on the mounting unit 300 one by one to perform the deposition process. Accordingly, the discharge of the residual reaction gas by the diffusion pump or the like takes a long time. Moreover, it is difficult to completely discharge the residual reaction gas. Defects may occur in a process of forming a material film on another semiconductor substrate that is subsequently mounted by the residual reaction gas.

For example, when a titanium film and a titanium nitride film are successively formed using a titanium target, an unwanted titanium nitride film may be further formed under the titanium film by the residual reaction gas, that is, the residual nitrogen gas. This will be described later in more detail.

In order to completely discharge such a residual reaction gas at a faster time, the gas discharge assisting means 510 is introduced at the front end of the discharge port 600 in the first embodiment of the present invention. The gas discharge assisting means 510 smoothes the discharge flow 700 of the discharged residual reaction gas and forcibly assists in forming a faster discharge flow 700.

For example, a fan is introduced into the gas discharge assisting means 510 as shown in FIG. 3 in front of the outlet 600. The fan has a wing that can rotate to forcibly form the discharge flow 700, the drive of the fan is made together with the drive of the diffusion pump. That is, the driving means 550 for driving the fan, for example, a driving motor, is driven together when the diffusion pump or the like which is the main means for discharging the gas is driven.

Accordingly, the discharge of the residual reaction gas can be made more quickly and more completely. That is, the residual reaction gas, for example, residual nitrogen gas, may be moved to the vicinity of the outlet 600 more quickly by the discharge flow 700 toward the outlet 600 formed by the fan. The residual reaction gas thus moved is easily discharged out of the chamber 100 by the diffusion pump or the like.

The gas discharge assisting means 510 introduced as described above helps to discharge the remaining reactive gas remaining in the chamber 100 more quickly and completely. Accordingly, when the material film is formed on the semiconductor substrate 200 that is subsequently mounted on a sheet, the influence of the residual reaction gas, for example, a defect in which an unwanted titanium nitride film is formed below the titanium film, can be excluded. .

FIG. 4 is a graph schematically illustrating a change in contact resistance of a metal film formed according to the order in which the semiconductor substrate is mounted in the chamber in order to explain the influence of the residual reaction gas on the metal film formed on the semiconductor substrate.

Specifically, the influence on the material film to be formed of the residual reaction gas, for example, the metal film, will be described as an example of using a titanium target on a semiconductor substrate and further supplying nitrogen gas as a reaction gas.

That is, the contact of the metal film formed in the case of a metal mode sputtering using a titanium target and in the case of a nitride mode sputtering using a titanium target and additionally supplying nitrogen gas as a reaction gas. 4 shows the results of measuring the resistance using a semiconductor parameter analyzer or the like.

At this time, the semiconductor substrate to be mounted on the deposition equipment is sequentially loaded with 25 sheets in one lot. For example, the third, twenty-fifth and fifteenth are filled with a semiconductor substrate and the rest is filled with a dummy substrate to proceed with the process. That is, it progresses to a single sheet process. In the case of metal mode sputtering, no time interval is provided before the sputtering is performed, and in the case of nitriding mode sputtering, the time interval is approximately 60 seconds. The results of the splitting of each case are shown in FIG. 4.

Reference numerals 810, 830, and 850, which are a case of nitriding mode sputtering, result in an increase in contact resistance when positioned at the rear end of the lot. That is, the contact resistance is higher in the 25th reference numeral 830 and the 15th reference numeral 850 than in the case where the semiconductor substrate is the third position in the lot. On the other hand, in the case of the metal mode sputtering, the third case of reference numeral 910, the 25th 930 and the fifteenth 950 all show similar contact resistance.

From this result, it can be seen that the contact resistance of a metal film, for example, a titanium film, which is formed under the influence of a substance remaining in the chamber when a reaction gas such as nitrogen gas is used, is changed. In addition, it can be seen that this tendency is further deepened when located at the rear end of one lot, that is, mounted at the rear end in the single-leaf process.

Thus, it can be seen that the change in contact resistance comes from the residual of the reaction gas such as nitrogen gas. That is, the amount of the remaining reactive gas, that is, nitrogen gas, increases toward the rear end of the lot, thereby increasing the probability of forming the titanium nitride film rather than forming the titanium film on the semiconductor substrate. Therefore, as described above, in the case of nitride mode sputtering, the contact resistance increases toward the rear end of the lot. This is largely due to the greater resistance of the titanium nitride film than the titanium film.

As a result, even when the titanium film is formed after the titanium film is deposited, it can be seen that an increase in contact resistance may occur due to residual nitrogen gas. That is, as shown in FIG. 1, it can be seen that a defect may occur in which a titanium nitride film is formed below the titanium film.

In addition, in the case of nitriding mode sputtering, a time for discharging the residual reaction gas for about 60 seconds was allowed before sputtering the titanium film on the subsequently mounted semiconductor substrate. However, in the case of the semiconductor substrate located at the rear end of the lot, that is, in the case of reference numerals 830 and 850, an increase in contact resistance occurs. Based on this point, it can be seen that it is not effective to have a discharge time of about 60 seconds as described above. Furthermore, in the process of forming the material film on the actual semiconductor substrate, maintaining a time interval of about 60 seconds or more between the semiconductor substrates sequentially mounted in a single-leaf format can be a significant burden on productivity.

In the first embodiment of the present invention, in order to effectively discharge such residual reaction gas, a gas discharge assistance means (510 in FIG. 1) is provided at the front end of the discharge port (600 in FIG. 2). That is, the fan is further installed to allow the rapid discharge of residual reaction gas. As a result, it is possible to prevent the formation of a metal nitride film such as an unwanted titanium nitride film by a residual reaction gas such as residual nitrogen gas. Accordingly, occurrence of a defect such as an increase in contact resistance can be prevented.

A method of manufacturing a metal film of a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. 2. The second embodiment of the present invention describes a method of manufacturing a metal film used as a diffusion barrier film or the like by using the deposition equipment according to the first embodiment. In this case, an increase in the contact resistance of the metal film may be prevented.

Specifically, the first semiconductor substrate 200 is mounted on the mounting portion 300 of the deposition apparatus according to the first embodiment of the present invention as shown in FIG. 2. That is, any one of the semiconductor substrates, for example, the first semiconductor substrate 200, is extracted from the lot introduced into the deposition equipment and mounted on the mounting unit 300. That is, the first semiconductor substrate 200 is mounted on the mounting unit 300 in a single-leaf manner.

In this case, an insulating layer covering the lower structure formed on the first semiconductor substrate 200 is formed on the first semiconductor substrate 200. In addition, the insulating layer may have a contact hole exposing a portion of the first semiconductor substrate 200. After mounting the first semiconductor substrate 200 to the mounting unit 300, argon gas is supplied to the chamber 100, and DC power is applied to the target unit 400.

For example, titanium particles are separated by the argon using a titanium target as the target portion 400, that is, sputtered so as to continuously move on the semiconductor substrate 100. In this way, a titanium film is formed on the first semiconductor substrate 200 exposed by the contact hole.

Sputtering of the titanium particles as described above is continued, and the reaction gas containing nitrogen gas (N ₂ ) or the like is supplied into the chamber 100. Accordingly, a titanium nitride film is formed on the titanium film by reaction with nitrogen gas. The double film of the titanium film and the titanium nitride film thus formed is used as a diffusion barrier film or the like.

Thereafter, the first semiconductor substrate 200 having the diffusion barrier layer formed thereon is separated from the mounting unit 300. Next, another semiconductor substrate, that is, a second semiconductor substrate, is taken out from the lot and mounted on the mounting portion.

At this time, the gas discharge assistance means 510, that is, the fan is operated by operating the drive motor 550. At the same time, a residual reaction gas, ie, residual nitrogen gas, used when a diffusion pump connected to the outlet 600 is operated to form a metal film, for example, a titanium film and a titanium nitride film, on the first semiconductor substrate 200. To the outside of the chamber 100.

By the action of the gas discharge assisting means 510, that is, the fan, the residual reaction gas forms a forced flow near the outlet 600. That is, the residual reaction gas may be quickly moved to the outlet 600 by the action of the fan. Accordingly, the residual reaction gas may be discharged to the outlet 600 more quickly. In addition, the residual reaction gas may be more completely discharged to reduce the internal reaction gas to a state inside the clean chamber 100 such as when the semiconductor substrate is initially mounted.

In this way, by eliminating the residual of the residual reaction gas, a metal film, for example, a titanium film, may be formed on the second semiconductor substrate which is subsequently mounted, without the occurrence of defects. That is, as shown in FIG. 1, an unwanted titanium nitride film (35 in FIG. 1) is formed below the titanium film (31 in FIG. 1) to prevent an increase in contact resistance of the metal film used as the diffusion barrier film. have.

5 and 6 are cross-sectional views schematically illustrating deposition apparatuses used for manufacturing a metal film of a semiconductor device according to a third embodiment of the present invention, and FIGS. 7 and 8 are collimators of FIG. 5; 570 is a perspective view schematically showing.

The third embodiment of the present invention differs from the first embodiment in that it introduces a bottomed cone-shaped collimator 570. Incidentally, in the third embodiment, the same reference numerals as in the first embodiment denote the same members.

Referring to FIG. 5, the third embodiment of the present invention further includes a conical collimator 570 formed underneath the first embodiment of the present invention. That is, a portion having a wide circumference of the conical collimator 570 having a bottomed conical shape between the mounting portion 300 on which the semiconductor substrate 200 is mounted and the target portion 400 is opposed to the target portion 400. A portion having a narrow circumference is mounted to face the semiconductor substrate 200.

Accordingly, directionality may be imparted to the movement of material particles, for example, titanium particles, sputtered in the target part 400. Accordingly, the titanium particles may be prevented from being deposited on the inner wall surface of the chamber 100, and the sputtered material particles may be focused onto the semiconductor substrate 200. That is, the bottomed cone-shaped collimator 570 has an inclined inner wall as shown in FIG. 7 to prevent the sputtered material particles from being scattered in all directions to focus on the semiconductor substrate 200. .

Furthermore, as shown in FIG. 8, by additionally introducing an auxiliary collimator 590 formed by condensing a tube or the like on top of the bottomed conical collimator 570, the sputtered material particles may be straight. Can be given additionally. That is, in the auxiliary collimator 590, a tube or the like formed in a hexagonal shape or the like is focused in a honeycomb shape or the like. Accordingly, straightness is imparted to sputtered material particles or the like incident on the semiconductor substrate 200 through the tube. Therefore, the step coverage or uniformity of the material film to be deposited, for example, the titanium film or the titanium nitride film, may be improved.

In addition, as in the first embodiment, a gas discharge assisting means 510 may be introduced between the discharge port 600 and the mounting part 300 to implement a faster and more complete discharge of the residual reaction gas. Accordingly, the semiconductor substrate 200 to be subsequently mounted may proceed with the deposition process of the metal film in the same state as the semiconductor substrate 200 to be initially mounted.

Meanwhile, referring to FIG. 6, even if a conical collimator 570 having a bottomed cone is introduced, an effect of increasing uniformity of the deposited metal film may be realized. That is, material particles sputtered by the undercut cone-shaped collimator 570 or the auxiliary collimator 590, for example, titanium particles, may be concentrated on the semiconductor substrate 200. Thereby, the uniformity of the film quality formed can be improved.

A method of manufacturing a metal film of a semiconductor device according to a fourth embodiment of the present invention will be described with reference to FIG. 5. In the fourth embodiment, as described in the third embodiment, the pointed conical collimator 570 is introduced, which is different from that in the second embodiment. Incidentally, the same reference numerals as in the second embodiment in the fourth embodiment denote the same members.

Specifically, the first semiconductor substrate 200 is mounted on the mounting portion 300 of the deposition apparatus according to the third embodiment of the present invention as shown in FIG. 5 in the same manner as described in the second embodiment. Thereafter, argon gas is supplied to the chamber 100, and DC power is applied to the target unit 400. For example, titanium particles are separated by the argon using the titanium target as the target portion 400, that is, sputtered so as to continue to move on the semiconductor substrate 100. In this way, a titanium film is formed on the first semiconductor substrate 200 exposed by the contact hole.

In this case, the bottomed cone-shaped collimator 570 introduced between the mounting portion 300 and the target portion 400 allows the stuttered particles to be focused on the first semiconductor substrate 200. That is, it is dispersed in all directions to prevent deposition on the inner wall of the chamber 100, and concentrates the sputtered titanium particles on the first semiconductor substrate 200. Accordingly, the formed titanium film is deposited more uniformly.

Further, in the third embodiment, as described with reference to FIG. 8, an auxiliary collimator 590 formed by converging tubes and the like may be further introduced on the top of the conical collimator 570 having a bottomed cone. Accordingly, straightness is further imparted to the sputtered titanium particles or the like. Thus, a more uniform titanium film can be formed.

Thereafter, as described in the second embodiment, sputtering of the titanium particles as described above is continued, and a reaction gas containing nitrogen gas or the like is supplied into the chamber 100. Accordingly, a titanium nitride film is formed on the titanium film by reaction with nitrogen gas. The double film of the titanium film and the titanium nitride film thus formed is used as a diffusion barrier film or the like.

Thereafter, the first semiconductor substrate 200 having the diffusion barrier layer formed thereon is separated from the mounting unit 300, and the gas discharge assisting means 510, that is, the fan, is operated by operating the driving motor 550. At the same time, a diffusion pump connected to the discharge port 600 is operated to discharge the used residual reaction gas, that is, residual nitrogen gas, to the outside of the chamber 100.

At this time, as described in the second embodiment, by the action of the gas discharge assisting means 510, that is, the fan, the residual reaction gas forms a forced discharge flow 700 near the discharge port 600. That is, the residual reaction gas may be quickly moved to the outlet 600 by the action of the fan. Accordingly, the residual reaction gas may be discharged to the outlet 600 more quickly. It is also more completely discharged.

As mentioned above, although this invention was demonstrated in detail through the specific Example, this invention is not limited to this, It is clear that the deformation | transformation and improvement are possible by the person of ordinary skill in the art within the technical idea of this invention.

According to the present invention described above, in the equipment for depositing a metal film by mounting a semiconductor substrate in a single-leaf type, it is possible to quickly and more completely discharge the residual reaction gas, for example, nitrogen gas, used in the deposition process that was previously performed. To this end, a gas discharge assistance means such as a fan is introduced at the rear end of the mounting portion, that is, at the front end of the discharge port. Such gas discharge assisting means, ie the fan, may form a forced flow of the residual reaction gas into the outlet in the chamber. Therefore, the residual reaction gas can be moved more quickly to the vicinity of the outlet by the forced flow. Accordingly, in the step of maintaining a vacuum in the chamber, the residual reaction gas can be discharged more quickly in the chamber more completely.

In this way, the residual reaction gas can be discharged quickly and completely in the chamber, thereby eliminating the influence on the material film, for example, the titanium film, to be formed on the semiconductor substrate subsequently mounted by the residual reaction gas. That is, it is possible to prevent the unwanted titanium nitride film from being formed under the titanium film by the residual reaction gas, that is, nitrogen gas. Accordingly, it is possible to prevent an increase in contact resistance of the diffusion barrier film made of the titanium film and the subsequently formed titanium nitride film.

Furthermore, by introducing a conical collimator or the like which is undercut between the mounting portion and the target portion, the sputtered particles, that is, titanium particles can be focused on the semiconductor substrate. Thereby, the uniformity of the metal film formed, ie, the double film of a titanium film and a titanium nitride film, can be improved.

Claims (17)

A chamber having a mounting portion on which a semiconductor substrate is mounted; A target portion introduced to face the mounting portion; An outlet for discharging the gas in the chamber; And And a gas discharge assistance means introduced into the chamber in front of the outlet port to assist the gas discharge. The deposition apparatus of claim 1, wherein the target unit comprises a titanium target. The semiconductor device according to claim 2, further comprising a bottomed conical collimator introduced between the target portion and the mounting portion to impart direction to the movement of material from the target portion to the semiconductor substrate. Deposition equipment used in the manufacture of metal films. The method of claim 3, wherein the conical collimator is And having a wide circumference in a direction opposite to the target portion and a narrow circumference in the opposite direction on the semiconductor substrate to focus the moving material on the semiconductor substrate. Deposition equipment. The method of claim 4, wherein the cone-shaped collimator on top Deposition equipment used in the manufacture of a metal film of a semiconductor device, characterized in that it further comprises an auxiliary collimator consisting of a focused tube to impart linearity to the movement of the material. The deposition apparatus as claimed in claim 1, wherein the gas contains nitrogen gas. The deposition apparatus of claim 1, wherein the outlet is disposed at a rear side of the mounting portion, and the gas discharge assisting means is introduced between the mounting portion and the outlet. The method of claim 7, wherein the gas discharge assistance means Evaporation equipment used for metal film manufacture of a semiconductor device, characterized in that the fan. A chamber having a mounting portion on which a semiconductor substrate is mounted; A target portion introduced to face the mounting portion; And And a bottomed cone collimator introduced between the target portion and the semiconductor substrate to impart direction to the movement of material from the target portion to the semiconductor substrate. Deposition equipment. The method of claim 9, wherein the conical collimator is And having a wide circumference in a direction opposite to the target portion and a narrow circumference in the opposite direction on the semiconductor substrate to focus the moving material on the semiconductor substrate. Deposition equipment. The method of claim 10, wherein the conical collimator on top Deposition equipment used in the manufacture of a metal film of a semiconductor device, characterized in that it further comprises an auxiliary collimator consisting of a focused tube to impart linearity to the movement of the material. A chamber having a mounting portion on which a semiconductor substrate is mounted, a target portion introduced opposite to the mounting portion, an outlet for discharging gas in the chamber, and a gas discharge assisting means introduced into the chamber in front of the outlet for assisting the gas discharge; Of deposition equipment that includes Mounting a first semiconductor substrate having an insulating film having a contact hole exposing a portion of the first semiconductor substrate to the mounting portion; Moving a material from the target portion to form a metal film covering the exposed first semiconductor substrate; Removing the first semiconductor substrate from the mounting portion, operating the gas discharge assisting means and discharging the gas; And And attaching a second semiconductor substrate to the mounting portion from which the first semiconductor substrate is detached from the first semiconductor substrate. The method of claim 12, wherein forming the metal film Forming a titanium film on the exposed first semiconductor substrate; And And supplying a reaction gas containing nitrogen gas onto the titanium film to form a titanium nitride film. The method of claim 13, wherein the step of evacuating the gas And discharging the nitrogen gas remaining in the step of forming the titanium nitride film. The method of claim 12, wherein forming the metal film A metal of the semiconductor device, which is introduced between the target portion and the mounting portion and is performed by a sputtering method using an undercut cone-shaped collimator that gives a direction to the movement of material from the target portion to the semiconductor substrate. Membrane manufacturing method. The method of claim 15, wherein the conical collimator is And having a wide circumference in the direction opposite the target portion and a narrow circumference in the opposite direction on the semiconductor substrate to focus the moving material on the semiconductor substrate. The method of claim 15, wherein the sputtering method A method of manufacturing a metal film of a semiconductor device, characterized by further comprising an auxiliary collimator consisting of a tube focused on the conical collimator to impart linearity to the movement of the material.