KR19990061064A - Manufacturing method of fine pattern of semiconductor device - Google Patents
Manufacturing method of fine pattern of semiconductor device Download PDFInfo
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- KR19990061064A KR19990061064A KR1019970081318A KR19970081318A KR19990061064A KR 19990061064 A KR19990061064 A KR 19990061064A KR 1019970081318 A KR1019970081318 A KR 1019970081318A KR 19970081318 A KR19970081318 A KR 19970081318A KR 19990061064 A KR19990061064 A KR 19990061064A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
본 발명은 반도체 소자의 미세패턴 제조방법에 관한 것으로, 특히 리소그래피 공정의 미세패턴 제조공정에서 반도체 기판의 표면에 HMDS 처리전 계면활성제가 함유된 용액으로 표면 처리함으로서 박막의 점착력을 증가시켜 패턴의 무너짐 및 탈리를 방지할 수 있는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a micropattern of a semiconductor device. In particular, in the process of manufacturing a micropattern of a lithography process, the surface of the semiconductor substrate is treated with a solution containing a surfactant before HMDS, thereby increasing the adhesive force of the thin film, thereby causing the pattern to collapse. And it relates to a technique capable of preventing desorption.
이를 위해 본 발명은 반도체 기판 표면에 감광막과의 점착력을 증가시키기 위해 HMDS용액을 이용한 세정 공정을 거치기전 계면활성제가 함유된 용액 처리를 한 다음, HMDS 처리 및 감광막 도포 공정을 진행하여 미세패턴을 형성함으로서 박막표면에서의 표면장력을 낮추어 주어 접촉각을 높여줌으로서 박막의 점착력을 증가시켜 패턴의 무너짐 및 탈리를 방지할 수 있는 반도체 소자의 미세패턴 제조방법을 제공한다.To this end, the present invention, before the washing process using the HMDS solution to increase the adhesion to the photosensitive film on the surface of the semiconductor substrate, the solution containing the surfactant is treated, followed by the HMDS treatment and photoresist coating process to form a fine pattern By lowering the surface tension at the surface of the thin film to increase the contact angle provides a method of manufacturing a fine pattern of the semiconductor device that can prevent the collapse and detachment of the pattern by increasing the adhesive force of the thin film.
Description
본 발명은 반도체 소자의 미세패턴 제조방법에 관한 것으로, 특히 리소그래피 공정의 미세패턴 제조공정에서 반도체 기판의 표면에 증점제인 다이사이렌인(hexamethyl disilane 이하, HMDS) 처리전에 계면활성제가 함유된 용액으로 표면 처리함으로서 박막의 점착력을 증가시켜 패턴의 무너짐 및 탈리를 방지할 수 있는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a micropattern of a semiconductor device, and more particularly, to a surface of a semiconductor pattern in a lithography process, in which a surface containing a surfactant is contained before treatment of a thickener, hexamethyl disilane (HMDS), on the surface of a semiconductor substrate. The present invention relates to a technique capable of preventing the collapse and detachment of a pattern by increasing the adhesive force of a thin film by treating.
일반적으로, 디바이스의 집적도가 높아짐에 따라 포토레지스트 두께는 일정하지만 패턴 크기가 작아지기 때문에 패턴의 에스펙트(aspect)비는 증가하게 된다. 에스펙트비가 커지면 L/S와 섬(island)패턴은 현상 공정시 도 1에 도시된 (a)와 같이 반도체 기판(10)에 감광막패턴(12)이 휘거나, (b)와 같이 감광막패턴(12)이 꺽어 쓰러지거나 또는 (c)와 같이 반도체 기판(10)으로부터 감광막패턴(12)이 탈리되는 등의 패턴 무너짐(collapse)가 발생하게 된다.In general, as the degree of integration of a device increases, the aspect ratio of the pattern increases because the photoresist thickness is constant but the pattern size becomes smaller. When the aspect ratio increases, the L / S and the island pattern may be bent in the developing process as the photosensitive film pattern 12 is bent on the semiconductor substrate 10 as shown in FIG. 1, or as shown in FIG. 12) is collapsed or a pattern collapse occurs such that the photosensitive film pattern 12 is detached from the semiconductor substrate 10 as shown in (c).
상기와 같이, 패턴이 훠거나 꺽어지는 것도 문제지만 특히 탈리되어 다른 지역으로 이동하는 것이 패턴의 미싱(missing)과 브리지(bridge)를 동시에 유발시킴으로서 수율 저하의 요인이 된다.As described above, the pattern may be broken or bent, but in particular, detachment and moving to another area may cause a drop in the yield by causing the pattern to miss and bridge at the same time.
또한, 에칭공정에서 박막과 포토레지스터간의 선택비가 급격히 향상되지 않는 한 포토레지스트 두께를 낮추는 것은 어렵다. 따라서, 박막과 포토레지스트간의 점착력(adhension) 특성을 증가시켜 패턴무너짐을 방지하는 것이 중요시된다.In addition, it is difficult to reduce the thickness of the photoresist unless the selectivity between the thin film and the photoresist is rapidly improved in the etching process. Therefore, it is important to increase the adhesion characteristics between the thin film and the photoresist to prevent pattern collapse.
종래 기술에 따른 반도체 소자의 미세패턴 제조공정은 다음과 같다.The micropattern manufacturing process of the semiconductor device according to the prior art is as follows.
먼저, 반도체 기판 표면에 감광막(photoresist)과의 점착력(adhesion)을 증가시키기 위해 HMDS용액을 이용하여 세정 공정을 거친 다음, 액상의 감광막을 회전도포법으로 반도체 기판에 일정 두께의 감광막을 형성한다.First, a cleaning process is performed using an HMDS solution to increase adhesion with a photoresist on a surface of a semiconductor substrate, and then a liquid photosensitive film is formed on the semiconductor substrate by a rotation coating method.
다음, 프리-베이크(pre-bake) 공정을 거쳐 상기 감광막내의 용매(svent)을 제거하여 감광막을 안정화시킨다.Next, the solvent in the photoresist film is removed through a pre-bake process to stabilize the photoresist film.
그 다음, 상기 감광막에 소프트(soft) 베이크 및 노광 공정을 실시한 후 현상공정을 실시하여 최종적으로 미세패턴을 형성한다.Then, the photosensitive film is subjected to a soft baking and exposure process, followed by a development process to finally form a fine pattern.
상기한 바와 같이, 종래의 마스크 공정에서는 박막상에 증점제인 HMDS 처리하여 레지스트를 도포하고 노광후 현상공정을 거치게 된다.As described above, in the conventional mask process, the thick film is treated with HMDS, which is a thickener, to apply a resist, and to undergo a post-exposure developing process.
그러나, 증점제인 HMDS를 처리하여도 패턴 무너짐이 생기거나 패턴된 포토레지스트가 리프팅(lifting)되어 탈리현상을 유발한다.However, even when the thickener HMDS is treated, pattern collapse occurs or the patterned photoresist is lifted to cause detachment.
즉, 박막상에 도핑되는 증점제가 패턴 무너짐, 리프팅, 탈리 등을 방지할 만큼 충분히 박막과 물리적, 화학적 결합을 이루지 못하기 때문이다.That is, the thickener doped on the thin film does not physically and chemically bond with the thin film sufficiently to prevent pattern collapse, lifting, and detachment.
따라서, 박막표면과 증점제 사이의 접촉각(contact angle)을 증가시킬 수 있도록 표면장력을 낮추어주는 것이 필요하다.Therefore, it is necessary to lower the surface tension so as to increase the contact angle between the thin film surface and the thickener.
다시말해, 증점제가 충분히 물리적, 화학적 결합을 이룰 수 있도록 표면장력이 높은 박막표면의 표면이 낮아지도록 하는 물질이 필요하게 된다. 점착력 특성이 좋지 않게 되어 패터닝 후에 패턴 무너짐이나 리프팅이 일어나는 것을 방지하기 위해서는 친수성의 박막 표면장력을 낮추어 주는 것이 필요하다.In other words, there is a need for a material that lowers the surface of the thin film surface with high surface tension so that the thickener can achieve sufficient physical and chemical bonds. In order to prevent poor adhesion characteristics and pattern collapse or lifting after patterning, it is necessary to lower the hydrophilic thin film surface tension.
이에, 본 발명은 상기한 문제점을 해결하기 위한 것으로 반도체 기판 표면에 감광막과의 점착력을 증가시키기 위해 HMDS용액을 이용한 세정 공정을 거치기전 계면활성제가 함유된 용액으로 표면 처리를 한 다음, HMDS 처리 및 감광막 도포 공정을 진행하여 미세패턴을 형성함으로서 박막표면에서의 표면장력을 낮추어 주어 접촉각을 높여줌으로서 박막의 점착력을 증가시켜 패턴의 무너짐 및 탈리를 방지할 수 있는 반도체 소자의 미세패턴 제조방법을 제공하는데 그 목적이 있다.Accordingly, the present invention is to solve the above problems, the surface treatment with a solution containing a surfactant before the cleaning process using a HMDS solution to increase the adhesion to the photosensitive film on the surface of the semiconductor substrate, and then treated with HMDS and It provides a fine pattern manufacturing method of a semiconductor device that can prevent the collapse and detachment of the pattern by increasing the adhesive force of the thin film by increasing the contact angle by lowering the surface tension on the surface of the thin film by forming a fine pattern by proceeding the photosensitive film coating process. Its purpose is.
도 1a 내지 도 1c 는 종래 기술에 따라 감광막패턴의 무너짐 현상을 도시한 도면1A to 1C illustrate collapse of the photoresist pattern according to the related art.
도 2a 및 도 2b 는 본 발명에 따라 계면활성제가 함유된 용액 처리 전후의 접촉각을 도시한 도면2A and 2B show contact angles before and after treating a solution containing a surfactant according to the present invention.
도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings
10 : 반도체 기판 12 : 감광막패턴10 semiconductor substrate 12 photosensitive film pattern
상기 목적을 달성하기 위해 본 발명에 따르면,According to the present invention to achieve the above object,
반도체 기판 표면에 계면활성제가 함유된 용액으로 표면을 처리하는 공정과,Treating the surface with a solution containing a surfactant on the surface of the semiconductor substrate,
상기 표면처리된 반도체 기판에 HMDS 처리하는 공정과,HMDS treatment on the surface-treated semiconductor substrate,
상기 HMDS 처리된 반도체 기판에 감광막을 도포하는 공정과,Applying a photosensitive film to the HMDS-treated semiconductor substrate;
상기 감광막에 노광 및 현상공정을 실시하는 공정을 구비한다.And a step of performing exposure and development steps on the photosensitive film.
이하, 본 발명에 따른 반도체 소자의 미세패턴 제조방법에 대하여 상세히 설명을 하기로 한다.Hereinafter, a method of manufacturing a fine pattern of a semiconductor device according to the present invention will be described in detail.
먼저, 반도체 기판 표면에 표면장력을 낮추기 위해 계면활성제가 함유된 용액으로 표면을 처리한다.First, the surface is treated with a solution containing a surfactant to lower the surface tension on the surface of the semiconductor substrate.
이 때, 상기 계면활성제는 음이온, 양이온, 양쪽성이온, 비이온의 유기 및 무기 계면활성제로 이루어진 군에서 임의로 선택되는 하나의 물질로 형성하며, 계면활성제의 농도가 1 ∼ 100 mol, 상기 비이온의 HLB(hydrophilic-lyphophilic-balance) 이 1 ∼ 20 인 범위에서 실시한다.At this time, the surfactant is formed of one material arbitrarily selected from the group consisting of anionic, cationic, zwitterionic, nonionic organic and inorganic surfactants, the concentration of the surfactant is 1 to 100 mol, the nonionic HLB (hydrophilic-lyphophilic-balance) is performed in the range of 1-20.
또한, 상기 계면활성제가 함유된 용액 표면 처리방법은 기화에 의한 스프레이식과 액화에 의한 디핑(dipping)방식, 스트림(stream)방식, 퍼들(puddle)방식으로 이루어진 군에서 임의로 선택되는 하나의 방식을 사용하며, 처리시간은 1 ∼ 3600 sec, 온도는 1 ∼ 300℃, 압력은 1 ∼ 1520 Torr 인 범위에서 실시한다.In addition, the method of treating the surface of the solution containing the surfactant uses one method arbitrarily selected from the group consisting of a spray method by vaporization, a dipping method by a liquefaction, a stream method, and a puddle method. The treatment time is 1 to 3600 sec, the temperature is 1 to 300 ° C. and the pressure is 1 to 1520 Torr.
그리고, 상기 계면활성제에 함유되는 용매는 비휘발성 유기용매 또는 휘발성 유기용매를 사용하며, 건조방식은 감압건조 또는 스핀건조 방식을 사용하며, 이 때의 온도는 1 ∼ 300℃, 압력은 1 ∼ 759 mmHg 인 범위에서 실시한다.The solvent contained in the surfactant may be a nonvolatile organic solvent or a volatile organic solvent, and the drying method may be a reduced pressure drying method or a spin drying method. At this time, the temperature may be 1 to 300 ° C. and the pressure may be 1 to 759. It is carried out in the range of mmHg.
다음, 상기 표면처리된 반도체 기판에 패턴 형성시 패턴의 무너짐 현상을 방지하고, 감광막(photoresist)과의 점착력(adhesion)을 증가시키기 위해 HMDS용액을 이용하여 세정 공정을 실시한다.Next, a patterning process is performed on the surface-treated semiconductor substrate, and a cleaning process is performed using an HMDS solution in order to prevent a collapse of the pattern and to increase adhesion to a photoresist.
그 다음, 상기 HMDS 처리된 반도체 기판에 액상의 감광막을 회전도포법으로 반도체 기판에 일정 두께의 감광막을 형성한 다음, 프리-베이크(pre-bake) 공정을 거쳐 감광막내의 용매(svent)을 제거하여 감광막을 안정화시킨다.Next, a liquid photoresist film is formed on the HMDS-treated semiconductor substrate by a spin coating method, and a photoresist film having a predetermined thickness is formed on the semiconductor substrate. Then, a solvent in the photoresist film is removed by a pre-baking process. Stabilize the photoresist.
이 때, 상기 감광막은 노볼락형, 포지티브 화학증폭형, 네가티브 화학증폭형, ArF, E-beam, X-ray 광원에 반응하는 화학증폭형으로 이루어진 군에서 임의로 선택되는 하나의 막으로 형성한다.At this time, the photosensitive film is formed of one film arbitrarily selected from the group consisting of novolac type, positive chemical amplification type, negative chemical amplification type, ArF, E-beam, and chemical amplification type reacting with X-ray light source.
다음, 상기 감광막에 소프트(soft) 베이크 및 노광 공정을 실시한 후 현상공정을 실시하여 최종적으로 미세패턴을 형성한다.Next, a soft baking and an exposure process are performed on the photoresist film, followed by a development process to finally form a fine pattern.
도 2a 및 도 2b 는 계면활성제가 함유된 용액 처리 전후의 접촉각을 도시한 도면이다.2A and 2B show contact angles before and after treatment with a solution containing a surfactant.
도 2a 에 도시된 바와 같이 계면활성제가 함유된 용액을 처리전(前)에는 친수성(hydrophilic)표면의 접촉각(contact)이 작으나, 도 2b 에 도시된 바와 같이 계면활성제가 함유된 용액을 처리후(後)에는 소수성(hydrophobic) 표면의 접촉각(contact)이 증가한다는 것을 알 수 있다.Before the solution containing the surfactant is treated as shown in FIG. 2A, the contact angle of the hydrophilic surface is small, but as shown in FIG. 2B, after the solution containing the surfactant is treated ( Iii) it can be seen that the contact angle of the hydrophobic surface increases.
따라서, 박막표면에서의 표면장력을 낮추어 주어 접촉각을 높여줌으로서 박막의 점착력을 증가시켜 패턴의 무너짐 및 탈리를 방지할 수 있다.Therefore, by lowering the surface tension on the surface of the thin film to increase the contact angle it is possible to increase the adhesion of the thin film to prevent the collapse and detachment of the pattern.
상기한 바와같이 본 발명에 따르면, 반도체 기판의 표면에 증점제인 HMDS 처리전에 계면활성제가 함유된 용액을 처리함으로서 박막의 점착력을 증가시켜 패턴의 무너짐 및 탈리되는 것을 방지하여 결함을 줄일 수 있어 소자의 생산수율 및 신뢰성을 향상시키는 이점이 있다.As described above, according to the present invention, by treating a solution containing a surfactant before the HMDS treatment, which is a thickener, on the surface of the semiconductor substrate, the adhesive force of the thin film is increased to prevent the collapse and detachment of the pattern, thereby reducing defects. There is an advantage of improving production yield and reliability.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970081318A KR19990061064A (en) | 1997-12-31 | 1997-12-31 | Manufacturing method of fine pattern of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970081318A KR19990061064A (en) | 1997-12-31 | 1997-12-31 | Manufacturing method of fine pattern of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19990061064A true KR19990061064A (en) | 1999-07-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970081318A KR19990061064A (en) | 1997-12-31 | 1997-12-31 | Manufacturing method of fine pattern of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR19990061064A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020085241A (en) * | 2001-05-07 | 2002-11-16 | 주식회사 현대 디스플레이 테크놀로지 | Method for manufacturing thin film transistor liquid crystal display device |
| KR20030095108A (en) * | 2002-06-11 | 2003-12-18 | 동부전자 주식회사 | Photo Resist Coating Apparatus and Method |
| WO2009012184A1 (en) * | 2007-07-13 | 2009-01-22 | Intermolecular, Inc. | Surface modification of low-k dielectric materials |
-
1997
- 1997-12-31 KR KR1019970081318A patent/KR19990061064A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020085241A (en) * | 2001-05-07 | 2002-11-16 | 주식회사 현대 디스플레이 테크놀로지 | Method for manufacturing thin film transistor liquid crystal display device |
| KR20030095108A (en) * | 2002-06-11 | 2003-12-18 | 동부전자 주식회사 | Photo Resist Coating Apparatus and Method |
| WO2009012184A1 (en) * | 2007-07-13 | 2009-01-22 | Intermolecular, Inc. | Surface modification of low-k dielectric materials |
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