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KR19980018300A - Voltage Controlled Oscillator and its Adjustment Method - Google Patents

Voltage Controlled Oscillator and its Adjustment Method Download PDF

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Publication number
KR19980018300A
KR19980018300A KR1019970036899A KR19970036899A KR19980018300A KR 19980018300 A KR19980018300 A KR 19980018300A KR 1019970036899 A KR1019970036899 A KR 1019970036899A KR 19970036899 A KR19970036899 A KR 19970036899A KR 19980018300 A KR19980018300 A KR 19980018300A
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South Korea
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variable
inductor
oscillation frequency
voltage
adjusting
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KR1019970036899A
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Korean (ko)
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KR100421554B1 (en
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신야 나카이
마사시 카츠마타
야스유키 핫토리
켄타 나가이
요시아키 후크미츠
타케히코 이시즈카
Original Assignee
사토우 히로시
티디케이 가부시기가이샤
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00Details
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
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    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1256Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
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    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1293Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
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    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/0014Structural aspects of oscillators
    • H03B2200/0024Structural aspects of oscillators including parallel striplines
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
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    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003Circuit elements of oscillators
    • H03B2200/004Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
    • HELECTRICITY
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    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/01Varying the frequency of the oscillations by manual means
    • H03B2201/011Varying the frequency of the oscillations by manual means the means being an element with a variable capacitance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/01Varying the frequency of the oscillations by manual means
    • H03B2201/012Varying the frequency of the oscillations by manual means the means being an element with a variable inductance
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/0208Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/03Varying beside the frequency also another parameter of the oscillator in dependence on the frequency

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Abstract

본 발명에 따른 전압제어발진기는 제어전압에 반응하는 주파수가 포함된 발진신호를 발생시키는 공명기와, 발진신호를 증폭시키는 증폭수단과,A voltage-controlled oscillator according to the present invention includes a resonator for generating an oscillation signal including a frequency responsive to a control voltage, amplifying means for amplifying an oscillation signal,

발진신호의 주파수를 조정하는 발진주파수조정수단과, 발진신호의 전압제어감도를 조정하는 전압제어감도조정수단을 구비한다. 또한 본 발명은 3단계로된 전압제어발진기의 조정방법을 제공한다.Oscillation frequency adjustment means for adjusting the frequency of the oscillation signal and voltage control sensitivity adjustment means for adjusting the voltage control sensitivity of the oscillation signal. The present invention also provides a method of adjusting a three-stage voltage-controlled oscillator.

Description

전압제어발진기 및 그 조정방법.Voltage Controlled Oscillator and Method of Adjusting It.

제1a도는 본 발명의 일실시예에 따른 전압제어발진기.Figure 1a illustrates a voltage controlled oscillator according to an embodiment of the present invention.

제1b도는 조정과정을 나타내는 주파수 및 전압 특성도.Figure 1b is a frequency and voltage characteristic diagram showing the adjustment process.

제2도는 제1도의 실시예에 있어서 적층구조를 나타내는 분해사시도.Fig. 2 is an exploded perspective view showing a laminated structure in the embodiment of Fig. 1; Fig.

제3a도 - 제3e도는 제1도의 일실시예에 따른 적층공정을 나타내는 도면.Figure 3a-3e show the lamination process according to one embodiment of Figure 1;

제4a도는 제3e도의 E-E선 단면도.Figure 4a is a sectional view taken along the line E-E of Figure 3e.

제4b도는 제7e도의 F-F선 단면도.Figure 4b is a cross-sectional view taken along line F-F of Figure 7e.

제5a도는 본 발명의 전압제어발진기의 다른 예를 나타내는 회로도.5A is a circuit diagram showing another example of the voltage-controlled oscillator of the present invention. Fig.

제5b도는 조정과정이 도시된 주파수, 전압 특성도.Figure 5b shows the frequency and voltage characteristic diagrams showing the adjustment process.

제6도는 제5도의 실시예에 있어서 적층구조를 나타내는 분해사시도.FIG. 6 is an exploded perspective view showing a laminated structure in the embodiment of FIG. 5; FIG.

제7a도 - 제7e도는 제5도의 실시예에 있어서 그 적층공정을 나타내는 도면.7A to 7E are diagrams showing the lamination step in the embodiment of FIG. 5;

제8a도는 본 발명의 전압제어발진기의 다른 예를 나타내는 회로도.8A is a circuit diagram showing another example of the voltage-controlled oscillator of the present invention.

제8b도는 조정과정이 도시된 주파수 및 전압 특성도.Figure 8b and Figure 8b are frequency and voltage characteristic diagrams illustrating the adjustment process.

제9a도는 본 발명의 전압제어발진기의 다른 예를 나타내는 회로도.9A and 9B are circuit diagrams showing another example of the voltage-controlled oscillator of the present invention.

제9b도는 조정과정이 도시된 주파수 및 전압 특성도.Figure 9b is a frequency and voltage characteristic diagram in which the adjustment process is shown.

제10a도는 종래의 전압제어발진기를 나타내는 회로도.10 is a circuit diagram showing a conventional voltage-controlled oscillator.

제10b도는 종래의 전압제어발진기의 문제점을 설명하기 위한 주파수 및 전압 특성도.10B is a frequency and voltage characteristic diagram for explaining a problem of a conventional voltage-controlled oscillator.

본 발명은 적층구조체로 된 공명기와 적층본체로 된 기판상에 장착되는 전자부품을 구비한 고주파용 전압제어발진기 및 이 전압제어발진기의 조정방법에 관한 것으로서, 특히 휴대용 전화기와 같은 무선통신분야에 사용되는 전압제어발진기 및 그 조정방법에 관한 것이다.The present invention relates to a high-frequency voltage-controlled oscillator having an electronic component mounted on a substrate made of a resonator and a laminate body made of a laminate structure, and a method of adjusting the voltage-controlled oscillator, and more particularly to a radio- And a method of adjusting the voltage controlled oscillator.

제10a도의 회로도에 나타낸 바와같이, 종래의 전압제어발진기는 고주파 성분을 초크하는 인덕터L1, 고주파성분을 차단하는 캐패시터C1, DC성분을 차단하는 캐패시터C2, 가변용량성 다이오드 D, 공명기 L2, 발진주파수를 조정하는 가변캐패시터C3, 결합캐패시터C4, 증폭용 트랜지스터 T, 피드백 캐패시터 C5, 트랜지스터 T의 주변회로를 형성하는 저항 R1, R2을 구비한다.As shown in the circuit diagram of FIG. 10A, the conventional voltage-controlled oscillator includes an inductor L1 chokeing a high-frequency component, a capacitor C1 intercepting a high-frequency component, a capacitor C2 intercepting a DC component, a variable capacitive diode D, a resonator L2, A coupling capacitor C 4, an amplifying transistor T, a feedback capacitor C 5, and resistors R 1 and R 2 forming a peripheral circuit of the transistor T.

전압제어발진기에 있어서, 가변용량성 다이오드 D의 용량 Cv은 입력단자(1)에 공급된 전압에 따라서 변화한다. 이 전압제어발진기의 발진주파수f(VT)는 다음식 (1), (3)으로 표시되며, 식중 공명기L2의 인덕턴스는 L2, 캐패시터C2의 용량은 C2, 캐패시터C3의 용량은 C3이다.In the voltage-controlled oscillator, the capacitance Cv of the variable capacitive diode D changes in accordance with the voltage supplied to the input terminal 1. The resonance frequency f (V T ) of the voltage-controlled oscillator is expressed by the following equations (1) and (3), where the inductance of the resonator L2 is L 2 , the capacitance of the capacitor C 2 is C 2 and the capacitance of the capacitor C 3 is C 3 to be.

f(VT) = 1/[2π{1/(1/C2+ 1/Cv) + C3} L2]1/2… (1) f (V T) = 1 / [2π {1 / (1 / C 2 + 1 / Cv) + C 3} L 2] 1/2 ... (One)

Cv = C0+ aVT… (2) (a 0)Cv = C 0 + aV T ... (2) (a 0)

df/dVT= df(VT, C2, C3, C0, a) dVT dF / dV T = dF (V T , C 2 , C 3 , C 0 , a) dV T

= -1 [1/{32π4f(VT)3} ] · {aL2/(1 + Cv/C2)2} … (3)= -1 [1 / {32? 4 f (V T ) 3 }] {aL 2 / (1 + Cv / C 2 ) 2 } (3)

종래 입력단자(1)와 트랜지스터T 사이에 배치된 캐패시터C2는 칩으로서 적층본체의 기판상에 장착되거나, 적층본체의 기판 내에 매설된다. 일본국 미심사 특허공개 1992-329705호에 기재된 바와같이 공명기L2를 수반하는 적층본체의 표면에는 도체가 형성되며, 이 도체가 트림(trim)되어 캐패시터C3의 용량을 조정할 때 제10b도에 나타낸 중심주파수f(VM), 즉 중심전압 VM이 입력단자로부터 주어지면 발진주파수가 조정된다.The capacitor C2, which is disposed between the input terminal 1 and the transistor T, is mounted on the substrate of the laminate body as a chip, or buried in the substrate of the laminate body. A conductor is formed on the surface of the laminated body accompanied by the resonator L2 as described in Japanese Unexamined Patent Publication No. 1992-329705 and the conductor is trimmed to adjust the capacitance of the capacitor C3, When the frequency f (V M ), that is, the center voltage V M, is given from the input terminal, the oscillation frequency is adjusted.

그러나, 전압제어발진기에 있어서 발진주파수 f(VT) 뿐만아니라 전압제어감도 df/dVT(VT)도 조절되는 상한, 하한을 가지고 있다. 즉, 제 10b도의 그래프에 나타낸 바와 같이 다음식(4) - (6)을 만족할 필요가 있다.However, in the voltage controlled oscillator, not only the oscillation frequency f (V T ) but also the voltage control sensitivity df / dV T (V T ) have upper and lower limits. That is, as shown in the graph of FIG. 10b, it is necessary to satisfy the following expressions (4) - (6).

fL2f(VL) fL1… (4)f L2 ( VL ) f L1 ... (4)

fH1f(VH) fH2… (5)f H1 f ( VH ) f H2 ... (5)

(fH1- fL1) / (VH- VL) df/dVT(VT) (f H1 - f L1) / (V H - V L) df / dV T (V T)

(fH2- fL2) / (VH- VL) … (6) (f H2 - f L2) / (V H - V L) ... (6)

식중 VM은 중심전압, VH는 입력단자(1)에 인가되는 상한전압, VL은 하한전압, f(VL)은 하한전압 VL에서의 발진주파수, f(VH)는 상한전압 VH에서의 발진주파수, fL1은 하한전압 VL에서의 상한발진주파수, fL2는 하한전압 VL에서의 하한발진주파수, fH1는 상한전압 VH에서의 하한발진주파수, fH2는 상한전압 VH에서의 상한발진주파수를 각각 타낸다.Where V M is the center voltage, V H is the upper limit voltage applied to the input terminal 1, V L is the lower limit voltage, f (V L ) is the oscillation frequency at the lower limit voltage V L , f (V H ) the oscillation frequency of the V H, f L1 is a lower limit voltage of the upper limit frequency of oscillation, f L2 of the V L is a lower limit oscillating frequency at the lower limit voltage V L, f H1 is the upper limit voltage lower limit of the oscillation frequency, f H2 in V H is an upper limit And the upper limit oscillation frequency at the voltage V H , respectively.

종래의 방법에 따라서 중심주파수 f(VM)에 대하여만 트리밍이 이루어졌을때 제 10도에 나타낸 바와같이 전압제어감도 df/dVT는 기준선이 시작되는 직선S1으로부터 직선S2, S3으로 편향된다. 따라서 전압제어감도 df/dVT는 식(6)으로 표현되는 상한과 하한으로부터 편향된다. 전압제어감도 df/dVT가 상한과 하한으로부터 편향되는 주요원인을 다음에 설명한다. 즉, 상기 식(1),(3)에서 알수 있는 바와같이 발진주파수 f(VT)는 가변용량성 다이오드D의 전압가변용량 Cv에 의존하고, 이 전압가변용량Cv은 식(2)에서 C0, a값이 크게 변동함에 따라 함께 큰 폭으로 변동한다. 이와같은 이유로 제조공정에서 생산성이 악화된다.When trimming is performed only for the center frequency f (V M ) according to the conventional method, as shown in FIG. 10, the voltage control sensitivity df / dV T is deflected from the straight line S1 at which the reference line starts to the straight lines S2 and S3. Therefore, the voltage control sensitivity df / dV T is biased from the upper and lower limits expressed by equation (6). The main causes of the deviation of the voltage control sensitivity df / dV T from the upper and lower limits are described below. That is, as can be seen from the equations (1) and (3), the oscillation frequency f (V T ) depends on the voltage variable capacitance Cv of the variable capacitance diode D, As 0 and a value fluctuate greatly, they fluctuate widely. For this reason, productivity in the manufacturing process deteriorates.

본 발명은 이상과 같은 문제점을 해소하여 전압제어감도를 조정할 수 있는 전압제어발진기와 이 전압제어발진기의 조정방법을 제공하는 것이다. 그 결과 제조공정에서의 생산성의 향상을 크게 도모할 수 있다.The present invention provides a voltage controlled oscillator capable of adjusting the voltage control sensitivity by solving the above problems and a method of adjusting the voltage controlled oscillator. As a result, it is possible to greatly improve the productivity in the manufacturing process.

이와같은 목적을 달성하기 위해 본 발명에 다른 전압제어발진기는 제어전압이 공급되는 입력단자(1)와 증폭용 트랜지스터T 사이에 배치되는 동시에 가변용량성 다이오드D의 가열단자와 공명기를 형성하는 메인 인덕터L2사이에 배치되는 라인 상에 접속되는 전압제어감도 조정용 캐패시터C2 ; 공명기를 형성하는 메인 인덕터L2와 병렬하는 발진주파수조정용 캐패시터C3를 구비한다.In order to achieve the above object, a voltage-controlled oscillator according to the present invention is disposed between an input terminal (1) to which a control voltage is supplied and an amplifying transistor (T), and a main inductor A capacitor C2 for voltage control sensitivity adjustment connected on a line disposed between the electrodes L2 and L2; And a capacitor C3 for oscillation frequency adjustment in parallel with the main inductor L2 forming a resonator.

또한 본 발명에 따른 전압제어발진기는 제어전압이 공급되는 입력단자(1)와 증폭용 트랜지스터T를 접속하는 라인(2)과 공명기를 형성하는 메인 인덕터L2사이에 배치되는 발진주파수 조정용 인덕터L3 ; 가변용량성 다이오드D의 가열단자와 발진주파수 조정용 인덕터L3의 가열단자 사이에 배치된 라인(2) 상에 접속되는 전압제어감도 조정용 인덕터L4를 구비한다.The voltage-controlled oscillator according to the present invention further includes an oscillation frequency adjusting inductor L3 disposed between the line 2 connecting the input terminal 1 to which the control voltage is supplied and the amplifying transistor T and the main inductor L2 forming the resonator; And a voltage control sensitivity adjusting inductor L4 connected on the line 2 arranged between the heating terminal of the variable capacitance diode D and the heating terminal of the oscillation frequency adjusting inductor L3.

또한 본 발명에 따른 전압제어발진기는 전압이 공급되는 입력단자(1)와 증폭용 트랜지스터T를 접속하는 라인(2)과 공명기를 형성하는 메인 인덕터L2사이에 접속되는 발진주파수조정용 인덕터L3 ; 가변용량성 다이오드D의 가열단자와 발진주파수 조정용 인덕터L3의 가열단자 사이의 라인(2) 상에 배치되는 전압제어감도 조정용 캐패시터C2를 구비한다.The voltage controlled oscillator according to the present invention further includes an oscillation frequency adjusting inductor L3 connected between the line 2 connecting the input terminal 1 to which the voltage is supplied and the amplifying transistor T and the main inductor L2 forming the resonator; And a voltage control sensitivity adjusting capacitor C2 disposed on the line 2 between the heating terminal of the variable capacitance diode D and the heating terminal of the oscillation frequency adjusting inductor L3.

또한 본 발명에 따른 전압제어발진기는 공명기를 형성한 메인 인덕터L2와 병렬하는 발진주파수조정용 캐패시터C3 ; 제어전압을 공급하는 입력단자(1)와 증폭용 트랜지스터T를 접속하는 라인(2) 상에 배치되는 동시에 가변용량성 다이오드D의 가열단자와 공명기형성용 메인 인덕터L2의 가열단자 사이에 배치되는 전압제어감도조정용 인덕터L4를 구비한다.The voltage controlled oscillator according to the present invention may further include an oscillation frequency adjustment capacitor C3 in parallel with the main inductor L2 forming the resonator. (2) for connecting the input terminal (1) for supplying the control voltage and the amplifying transistor (T), and a voltage (V) arranged between the heating terminal of the variable capacitive diode (D) and the heating terminal of the resonator forming main inductor And a control sensitivity adjusting inductor L4.

또한 본 발명에 따른 전압제어발진기는 전압제어발진기의 기판표면상에 발진주파수조정용의 캐패시터C3 및/또는 인덕터L3를 구성하는 도체가 형성되고, 전압제어발진기의 기판표면 상에 전압제어감도 조정용 캐패시터C2 및/또는 인덕터L4를 구성하는 도체가 형성되어 있다.In the voltage controlled oscillator according to the present invention, a capacitor constituting the oscillator frequency adjusting capacitor C3 and / or the inductor L3 is formed on the surface of the substrate of the voltage controlled oscillator, and a voltage control sensitivity adjusting capacitor C2 And / or a conductor constituting the inductor L4 are formed.

또한 본 발명에 따른 전압제어발진기의 조정방법은 발진주파수를 조정하는 캐패시터C3 및/또는 인덕터L3를 구성하는 도체에 대하여 함수적 트리밍을 행하여 일단 대략적으로 발진주파수를 조정하는 단계 ; 전압제어감도를 조정하는 캐패시터C2 및/또는 인덕터L4를 구성하는 도체에 대하여 함수적 트리밍을 행하여 특정의 값으로 전압제어감도를 조정하는 단계 ; 상기 발진주파수를 조정하는 캐패시터C3 및/또는 인덕터L3룰 구성하는 도체에 대하여 다시 함수적 트리밍을 행하여 특정 값으로 발진주파수를 조정하는 단계를 구비한다. 이 경우 함수적 트리밍은 전압제어발진기의 특성이 측정되는 동안 행해지는 트리밍으로서 정의된다.Further, a method of adjusting a voltage-controlled oscillator according to the present invention may include a step of performing functional trimming on a capacitor constituting a capacitor C3 and / or an inductor L3 which adjusts an oscillation frequency, and then roughly adjusting an oscillation frequency; Performing functional trimming on the capacitor constituting the capacitor C2 and / or the inductor L4 for adjusting the voltage control sensitivity and adjusting the voltage control sensitivity to a specific value; And performing a functional trimming again on the conductor constituting the capacitor C3 and / or the inductor L3 that adjusts the oscillation frequency to adjust the oscillation frequency to a specific value. In this case, the functional trimming is defined as the trimming performed while the characteristics of the voltage-controlled oscillator are measured.

본 발명에 따르면 공명기에 직렬로 접속된 인덕터 또는 공명기에 병렬로 접속된 캐패시터에 함수적 트리밍이 행해질 때 발진주파수가 조정된다. 본 발명에 따르면 전압제어감도조정용 캐패시터 또는 인덕터가 라인 상에 정렬될 때 함수적 트리밍이 행해진다. 이에따라 전압제어감도가 조정되므로 본 발명에 따르면 발진주파수 뿐만 아니라 전압제어감도 또한 조정될 수 있다.According to the present invention, the oscillation frequency is adjusted when functional trimming is performed on an inductor connected in series to the resonator or a capacitor connected in parallel to the resonator. According to the present invention, functional trimming is performed when the voltage control sensitivity adjusting capacitor or the inductor is aligned on the line. Accordingly, since the voltage control sensitivity is adjusted, not only the oscillation frequency but also the voltage control sensitivity can be adjusted according to the present invention.

다음에, 본 발명의 바람직한 실시예에 관하여 첨부도면을 참조하여 상세히 설명한다.Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

제1도 - 제4도를 참조하여 본 발명의 제1실시예에 따른 전압제어발진기에 관하여 설명한다. 제1a도는 전압제어발진기에 있어서 그 회로의 일예를 나타내며, 이 회로도는 제10a도에 나타낸 종래의 회로도와는 다음과 같은 점에서 상이하다. 도선(2)에 접속되는 한편 가변용량성 다이오드D의 가열단자와 공명기L2의 가열단자 사이에 위치하는 캐패시터C2는 DC전류를 차단하는데 사용될 뿐만 아니라 전압제어감도를 조정하는데도 사용된다.The voltage controlled oscillator according to the first embodiment of the present invention will be described with reference to FIGS. Fig. 1 (a) shows an example of a circuit in a voltage-controlled oscillator, and this circuit diagram differs from the conventional circuit diagram shown in Fig. 10 (a) in the following points. Capacitor C2, which is connected to lead 2 and which is located between the heating terminal of variable capacitance diode D and the heating terminal of resonator L2, is used to block DC current as well as to adjust voltage control sensitivity.

제2도는 전압제어발진기의 각 층의 구조를 나타내는 도면이고, 제3도는 각 층 위의 도체패턴의 위치관계와 제조공정을 나타내는 도면이다. 또 제4a도는 본 예의 조정부를 나타내는 단면도이다. 제2도 및 제3도이 있어서 참조부호 3a - 3e는 알루미나 등으로 제조된 유전체층이고, 참조부호 4a 및 4b는 유전체층(3a),(3c) 상에 형성된 접지도체, L2는 이들 접지도체(4a),(4b)와 접속되는 스트립라인(stripe line) 공명기로 이루어지는 메인 도체이다.Fig. 2 is a view showing the structure of each layer of the voltage-controlled oscillator, Fig. 3 is a diagram showing the positional relationship of the conductor pattern on each layer and the manufacturing process. 4A is a cross-sectional view showing an adjustment portion of this embodiment. 3A and 3E are dielectric layers made of alumina or the like. Reference numerals 4a and 4b denote ground conductors formed on the dielectric layers 3a and 3c, L2 denote ground conductors formed on the ground conductors 4a, And a strip line resonator connected to the first and second electrodes 4a and 4b.

L1은 상기 유전체층(4a),(4b) 상에 형성된 도체로서 고주파전류를 초크하는 인덕터L1로 되어 있다. 참조부호 5a, 5b는 캐패시터C2로 된 도체이다. 참조부호6은 접지도체(4b)와 대향하는 도체로서 도체(6)와 접지도체(4b)는 발진주파수를 조정하는 캐패시터C3를 구성한다. 상기 도체(4a),(4b),(5a),(5b),(6)는 은, 또는 은합금 등으로 제조된다.L1 is an inductor L1 that chokes high-frequency current as a conductor formed on the dielectric layers 4a, 4b. Reference numerals 5a and 5b denote conductors made of a capacitor C2. Reference numeral 6 denotes a conductor opposed to the ground conductor 4b, and the conductor 6 and the ground conductor 4b constitute a capacitor C3 for adjusting the oscillation frequency. The conductors 4a, 4b, 5a, 5b, 6 are made of silver, silver alloy, or the like.

최상부의 유전체층(3e) 상에는 제1a도에 나타낸 바와같이 트랜지스터T, 캐패시터C1, C4, 가변용량성 다이오드D등이 배치된다.On the uppermost dielectric layer 3e, a transistor T, capacitors C1 and C4, a variable capacitive diode D, and the like are disposed as shown in FIG.

전압제어발진기는 다음과 같이 제조된다.The voltage-controlled oscillator is manufactured as follows.

- 제3a도 - 제3e도에 나타낸 바와같이 유전체시트로 제조된 유전체층(3a)-(3e) 상에는 도체가 형성되고,- Conductors are formed on the dielectric layers 3a and 3e made of a dielectric sheet as shown in Figs. 3a to 3e,

- 유전체시트 상에는 제1a도에 나타낸 도체패턴이 형성된다.The conductor pattern shown in FIG. 1A is formed on the dielectric sheet.

- 이들 유전체시트를 상호 중첩하여 열압축성접착을 행한다.- These dielectric sheets are overlapped with each other to perform thermocompression bonding.

- 각 전압제어발진기의 치수에 따라서 적층본체가 절단된다.- The laminate body is cut according to the dimensions of each voltage-controlled oscillator.

- 적층본체에 열을 가한다.- Apply heat to the laminate body.

- 측방향단자전극(도시하지않음)은 인쇄 또는 도금에 의해 형성되고,- The lateral terminal electrodes (not shown) are formed by printing or plating,

- 캐패시터C1, C4, 저항 R1, R2, 가변용량성 다이오드D, 트랜지스터T 및 도면에 도시되지 않은 다른 전기부품을 납땜에 의해 적층본체의 상부표면에 부착한다.Capacitors C1 and C4, resistors R1 and R2, variable capacitive diodes D, transistors T and other electrical components not shown in the figure are attached to the upper surface of the laminate body by soldering.

제2도, 제3도, 제4a도에 나타낸 바와같이 전압제어발진기가 상기 공정으로 제조될 때 발진기를 구성하는 메인 인덕터L2의 일단이 관통구멍(7)을 경유하여 상부접지도체(4a) 및 하부접지도체(4b)에 접속되고, 메인 인덕터L2의 타단이 관통구멍(8)을 경유하여 제5유전체층(3e)에 장착되는 캐패시터용 도체(5b)에 접속된다.As shown in FIG. 2, FIG. 3 and FIG. 4a, when the voltage-controlled oscillator is manufactured by the above process, one end of the main inductor L2 constituting the oscillator is connected to the upper ground conductor 4a and the upper ground conductor 4a via the through- And the other end of the main inductor L2 is connected to the conductor 5b for the capacitor which is mounted on the fifth dielectric layer 3e via the through hole 8. The capacitor conductor 5b is connected to the lower ground conductor 4b.

제1b도는 본 실시예의 전압제어발진기를 조정하는 방법을 설명하기 위해 전압 VT과 발진주파수 f 간의 관계를 나타내는 도면이다. 제1b도의 직선 a1 - a4는 (f-V) 특성을 나타낸다. 즉 제1b도의 직선 a1 - a4는 각 조정단계에서 주파수 및 전압특성을 나타낸다. 직선 a1으로 나타낸 바와같이 전압제어발진기의 조정단계전에 중심전압 VM에서의 주파수 f(VM)은 목표주파수 f0보다 낮게 설정되고, (f-V) 특정곡선의 기울기는 (f-V)의 목표특성곡선의 기울기보다 크게 설정된다. 먼저, 제3e도에 나타낸 바와같이 발진주파수를 조정하는 캐패시터C3의 도체(6)에 대한 트리밍(10)에 의해 중심전압 VM에서의 주파수 f(VM))이 제1b도의 직선 a2에 나타낸 바와 같이 목포주파수 f0보다 낮게 조정된다.1B is a diagram showing the relationship between the voltage V T and the oscillation frequency f in order to explain a method of adjusting the voltage-controlled oscillator of this embodiment. The straight lines a1 - a4 in FIG. 1 (b) show the (fV) characteristic. That is, the straight lines a1 to a4 in FIG. 1 (b) show frequency and voltage characteristics in each adjustment step. The frequency f (V M ) at the center voltage V M is set to be lower than the target frequency f 0 before the adjustment step of the voltage controlled oscillator as indicated by a straight line a1, and the slope of the specific curve (fV) As shown in FIG. First, as shown in FIG. 3E, the frequency f (V M) at the center voltage V M by the trimming 10 of the conductor 6 of the capacitor C3 that adjusts the oscillation frequency is shown on the straight line a2 of FIG. 1 Is adjusted to be lower than the Mokpo frequency f 0 as shown in FIG.

다음에, 제3e도에 나타낸 바와같이 전압제어감도를 조정하는 캐패시터C2의 트리밍(11)에 의해 전압제어감도 df/dVT가 제1b도의 직선 a3로 나타낸 바와같이 목표감도로 조정된다.Next, as shown in FIG. 3E, the voltage control sensitivity df / dV T is adjusted to the target sensitivity as indicated by the straight line a3 in FIG. 1B by trimming (11) of the capacitor C2 which adjusts the voltage control sensitivity.

다음에, 제3e도에 나타낸 바와같이 발진주파수를 조정하는 캐패시터C3의 또 한번의 트리밍(12)에 의해 중심주파수 f(VM)는 제1b도의 직선 a4로 나타낸 바와같이 목표주파수 f0로 조정된다.Next, as shown in FIG. 3E, the center frequency f (V M ) is adjusted to the target frequency f 0 by the trimming 12 of the capacitor C 3 for adjusting the oscillation frequency as indicated by the straight line a 4 of FIG. do.

전술한 바와 같이 전압제어감도 및 발진주파수가 제어될 경우 전압제어감도의 약화를 방지하면서 제조공정의 생산성을 향상시킬 수 있다. 3단계로 트리밍이 수행될 경우 높은 정밀도의 조정이 가능하게 된다.When the voltage control sensitivity and the oscillation frequency are controlled as described above, the productivity of the manufacturing process can be improved while preventing the voltage control sensitivity from being weakened. If trimming is performed in three steps, high-precision adjustment becomes possible.

제4b도 및 제5도 - 제7도를 참조하여 본 발명의 제2실시예에 관하여 설명한다. 제5a도에 나타낸 바와 같이, 발진주파수를 조정하는 인덕터L3가 공명기를 형성하는 메인 인덕터L2와 라인(2) 사이에 접속되고, 이 라인(2)은 제어전압이 공급되는 입력단자(1)와 증폭용 트랜지스터T 사이에 배치된다. 라인(2) 상에는 전압제어감도를 조정하는 인덕터L4가 가변용량성 다이오드D의 가열단자와 발진주파수를 조정하는 인덕터L3의 가열단자 사이에 접속된다.A second embodiment of the present invention will be described with reference to FIG. 4b and FIGS. 5 to 7. FIG. 5A, the inductor L3 for adjusting the oscillation frequency is connected between the main inductor L2 forming the resonator and the line 2. The line 2 is connected to the input terminal 1 to which the control voltage is supplied And is disposed between the amplification transistors T. On the line 2, the inductor L4 for adjusting the voltage control sensitivity is connected between the heating terminal of the variable capacitive diode D and the heating terminal of the inductor L3 for adjusting the oscillation frequency.

제6도는 이러한 예를 실현하는 각 층의 구성에 관한 사시도이고, 제7도는 제조공정에 있어서 각 층 상의 도체패턴의 위치관계를 나타내는 도면이다. 제4b도는 이러한 예의 조정부를 나타내는 단면도이다. 제2도, 제3도, 제6도, 제7도에서는 같은 구성요소는 같은 부호를 병기하였다. 제7a도 - 7e도는 적층공정의 순서를 나타낸다. 제6도 및 제7도에 있어서 부호L3는 발진주파수를 조정하는 인덕터L3를 구성하는 도체이다. 참조부호 13-15로 나타낸 바와 같이 트리밍이 행해지면 전류가 흐르는 통로의 길이가 확대되며, 이에따라 인덕턴스가 증대하여 발진주파수가 저하된다.FIG. 6 is a perspective view showing the structure of each layer for realizing this example, and FIG. 7 is a diagram showing the positional relationship of conductor patterns on each layer in the manufacturing process. 4b is a cross-sectional view showing an adjustment part of this example. In FIGS. 2, 3, 6 and 7, the same elements are denoted by the same reference numerals. 7a to 7e show the sequence of the laminating process. 6 and 7, reference symbol L3 denotes a conductor constituting the inductor L3 for adjusting the oscillation frequency. When trimming is performed as indicated by reference numeral 13-15, the length of the passage through which the current flows is increased, and the inductance is increased to lower the oscillation frequency.

제6도 및 제7도에 있어서 L4는 전압제어감도를 조정하는 인덕터L4를 구성하는 도체이다. 참조부호16에 의해 트리밍이 행해질 때 전압제어감도가 증대할 수 있다.6 and 7, L4 is a conductor constituting the inductor L4 for adjusting the voltage control sensitivity. The voltage control sensitivity can be increased when the trimming is performed by the reference numeral 16.

제5b도의 직선 b1을 나타낸 바와같이 조정을 행하기 전에 본 실시예의 경우에는 전압제어발진기가 다음과 같이 설정된다. 중심전압에서의 주파수 f(VM)은 목표주파수 f0보다 높게 설정되고, 전압제어감도의 (f-V)의 특정곡선의 기울기는 (f-V)의 목표특성곡선의 기울기보다 작게 설정된다. 먼저, 공명기가 되는 인덕터L2에 직렬로 접속된 인덕터L3의 트리밍에 의해 제7e도의 참조부호 13-15에 나타낸 트리밍에 의해 전류가 흐르는 통로의 길이가 인덕턴스를 증대시킬 수 있도록 커진다. 제5b도의 직선 b2에서 나타낸 바와같이 중심발진주파수 f(VM)가 목표주파수 f0에 근접하게 된다.As shown by line b1 in FIG. 5b, before the adjustment is made, in the case of this embodiment, the voltage-controlled oscillator is set as follows. The frequency f (V M ) at the center voltage is set to be higher than the target frequency f 0 , and the slope of the specific curve of the voltage control sensitivity (fV) is set to be smaller than the slope of the target characteristic curve of (fV). First, by the trimming of the inductor L3 connected in series with the inductor L2 which is a resonator, the length of the passage through which the current flows by the trimming indicated by reference numeral 13-15 in Fig. 7e becomes large so that the inductance can be increased. The center oscillation frequency f (V M ) becomes close to the target frequency f 0 as shown by the straight line b 2 in FIG. 5 (b).

다음에, 인덕터L4를 트리밍하여, 즉 제7e도에 나타낸 트리밍에 의해 인덕턴스가 증대한다. 이에따라 전압제어감도가 제5b도의 직선으로 나타낸 바와 같이 조정된다. 이때 발진주파수가 동시에 낮아진다.Next, the inductor L4 is trimmed, that is, the inductance is increased by the trimming shown in Fig. 7E. So that the voltage control sensitivity is adjusted as indicated by a straight line in FIG. 5b. At this time, the oscillation frequency is lowered at the same time.

다음에, 공명기용 메인 인덕터L2에 직렬로 접속된 인덕터L3에 추가의 트리밍이 행해질 때 제5b도에 나타낸 바와같이 중심주파수 f(VM)가 목표발진주파수 f0로 조정된다.Next, when additional trimming is performed on the inductor L3 connected in series to the resonator main inductor L2, the center frequency f (V M ) is adjusted to the target oscillation frequency f 0 as shown in FIG. 5B.

상술한 바와같이 조정이 3단계로 행해질 때 전술한 제1실시예와 같은 효과를 얻을 수 있다.When the adjustment is performed in three stages as described above, the same effects as those of the first embodiment described above can be obtained.

제8a도는 본 발명의 제3실시예를 나타낸다. 이 제3실시예는 다음과 같이 구성된다. 제4b도 - 제7도에 나타낸 제2실시예에서 전압제어감도를 조정하는 인덕터L4 대신에 제1도 - 제4a도에 나타낸 전압제어감도 조정용 캐패시터C2가 사용된다.Figure 8a shows a third embodiment of the present invention. The third embodiment is configured as follows. A voltage control sensitivity adjusting capacitor C2 shown in the first to fourth diagrams is used instead of the inductor L4 for adjusting the voltage control sensitivity in the second embodiment shown in FIGS.

제8a도의 실시예에 있어서 설정은 다음과 같이 행해진다. 조정을 행하기 전 상태에서 제8b도의 직선C1에 나타낸 바와같이 중심전압의 주파수 f(VM)는 목표주파수 f0보다 높고, 전압제어감도의 (f-V)의 특성곡선의 기울기는 (f-V)의 목표특성곡선의 기울기보다 크다. 먼저, 공명기를 구성하는 인덕터L2에 직렬로 접속된 인덕터L3의 트리밍에 의해 즉, 제7e도의 참조부호 13-15에 나타낸 트리밍에 의해 전류가 흐르는 통로의 길이가 증대하여 인덕턴스가 증대한다. 이에따라 제8b도의 직선 c2에 나타낸 바와같이 중심발진주파수 f(VM)가 목표주파수 f0에 접근한다.In the embodiment of FIG. 8A, the setting is performed as follows. The frequency f (V M ) of the center voltage is higher than the target frequency f 0 and the slope of the characteristic curve of the voltage control sensitivity is (fV) as shown by the line C 1 in FIG. 8 Is larger than the slope of the target characteristic curve. First, by the trimming of the inductor L3 connected in series to the inductor L2 constituting the resonator, the length of the passage through which the current flows increases by the trimming indicated by reference numeral 13-15 in Fig. 7e, and the inductance increases. As a result, the center oscillation frequency f (V M ) approaches the target frequency f 0 as shown by the straight line c 2 in FIG. 8b.

다음에, 전압제어감도 조정용 캐피시터C2에 트리밍이 행해져 용량이 감소한다. 이에따라 제8b도의 직선(3)에 나타낸 바와같이 전압제어감도가 조정된다(낮게). 이때 발진주파수가 동시에 증대한다.Next, trimming is performed on the voltage control sensitivity adjusting capacitor C2, and the capacitance is decreased. Thereby, the voltage control sensitivity is adjusted (lowered) as indicated by the straight line 3 in FIG. 8b. At this time, the oscillation frequency increases at the same time.

다음에, 제8b도의 직선 c4로 나타낸 바와같이 공명기L2에 직렬로 접속된 인덕터L3에 또한 트리밍을 행하여 중심발진주파수 f(VM)를 목표주파수 f0로 조정한다. 이러한 실예를 통해 전술한 바와같은 효과를 얻을 수 있다.Next, the to the inductor L3 connected in series to the resonator L2, as indicated by the straight line c4 8b degrees also subjected to trimming to adjust the center oscillating frequency f (V M) to the target frequency f 0. The effects described above can be obtained through such an example.

제9a도는 본 발명의 제4실시예를 나타내며, 다음과 같이 구성된다. 즉, 제1도 - 4a도에 나타낸 실시예에 있어서 전압제어감도를 조정하는 캐패시터C2 대신에 제4b도 - 제7도에 나타낸 전압제어감도 조정용 인덕터L4가 배치된다.9A shows a fourth embodiment of the present invention, and is constructed as follows. That is, in the embodiment shown in Fig. 4a, the voltage control sensitivity adjusting inductor L4 shown in Figs. 4b to 7 is arranged instead of the capacitor C2 for adjusting the voltage control sensitivity.

제9a도에 나타낸 실시예에 있어서, 설정은 다음과 같이 행한다. 즉, 조정을 행하기 전 상태에서 제9b도의 직선 d1으로 나타낸 바와같이 중심전압에서의 주파수 f(VM)은 목표주파수 f0보다 낮고, 전압제어감도 (f-V)의 특성곡선의 기울기가 (f-V) 목표특성곡선의 기울기보다 작다. 먼저, 공명기를 구성하는 인덕터L2에 병렬로 접속된 발진주파수를 조정하는 캐패시터C3를 트리밍하여 제9b도의 직선 d2에 나타낸 바와같이 중심발진주파수 f(VM)을 목표주파수 f0보다 약간 높게 설정한다.In the embodiment shown in FIG. 9A, the setting is performed as follows. That is, the frequency f (V M ) at the center voltage is lower than the target frequency f 0 and the slope of the characteristic curve of the voltage control sensitivity (fV) is (fV ) Is smaller than the slope of the target characteristic curve. First, the capacitor C3 that adjusts the oscillation frequency connected in parallel to the inductor L2 constituting the resonator is trimmed to set the center oscillation frequency f (V M ) to be slightly higher than the target frequency f 0 as shown by the straight line d2 in FIG. 9b .

다음에, 전압제어감도를 조정하는 인덕터L4의 트리밍에 의해 인덕턴스를 증대시킨다. 이에따라 제9b도의 직선 d3으로 나타낸 바와같이 전압제어감도를 목표감도로 조정한다(높게). 이때, 발진주파수가 동시에 낮아진다.Next, the inductance is increased by trimming the inductor L4 that adjusts the voltage control sensitivity. As a result, the voltage control sensitivity is adjusted to the target sensitivity (high) as indicated by the straight line d3 in FIG. 9b. At this time, the oscillation frequency is simultaneously lowered.

다음에, 제9b도의 직선 d4으로 나타낸 바와같이 공명기L2와 병렬하는 캐패시터C3에 대해 트리밍을 행할 경우 중심발진주파수 f(VM)가 목표주파수 f0로 조정된다. 이와같은 실예를 통해 전술한 바와같은 효과를 얻을 수 있다.Next, as shown by the straight line d4 in FIG. 9b, when trimming is performed on the capacitor C3 in parallel with the resonator L2, the central oscillation frequency f (V M ) is adjusted to the target frequency f 0 . The effects described above can be obtained through such an example.

이상과 같이 여러가지 실시예에 관하여 설명하였지만 본 발명을 실시할 때 당분야의 통상의 기술자에 의해 여러가지 변형이 가능함은 물론이라 할 것이다. 즉 부품의 재질의 변형, 장착될 전자부품의 배열의 변형, 전자부품대신 추가의 적층구조를 채용하는 것등은 그 변형예라 할 것이다. 발진주파수 조정용 캐패시터 및 인덕터 뿐만 아니라 전압제어감도 조정용 캐패시터 및 인덕터와 관련하여서도 이들 중 한가지 뿐만 아니라 2가지 모두를 사용할 수 있다.While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. That is, the modification of the material of the component, the modification of the arrangement of the electronic components to be mounted, the adoption of the additional lamination structure in place of the electronic component, and the like will be described. As well as capacitors and inductors for oscillation frequency adjustment, as well as capacitors and inductors for voltage control sensitivity adjustment, both of them can be used.

본 발명에 따르면 발진주파수 조정용 캐패시터 및 인덕터 뿐만아니라 전압제어감도 조정용 캐패시터 또는 인덕터 또한 제공된다. 따라서, 전압제어감도의 조정이 가능하여 제조공정에서의 생산성을 향상시킬 수 있다.According to the present invention, not only capacitors and inductors for oscillation frequency adjustment but also capacitors or inductors for voltage control sensitivity adjustment are provided. Therefore, the voltage control sensitivity can be adjusted and the productivity in the manufacturing process can be improved.

또 본 발명에 따르면 조정용 캐패시터 및/또는 인덕터가 기판표면에 배치되므로 트리밍을 용이하게 실행할 수 있다.Further, according to the present invention, trimming can be easily performed since the adjusting capacitor and / or the inductor are disposed on the substrate surface.

또한 본 발명에 따르면 3단계로 조정을 행하므로 높은 정밀도의 조정을 행할 수 있다.Further, according to the present invention, since adjustment is performed in three steps, adjustment with high accuracy can be performed.

Claims (15)

제어전압에 반응하는 주파수가 포함된 발진신호를 발생시키는 공명기와,A resonator for generating an oscillation signal including a frequency responsive to the control voltage; 발진신호를 증폭시키는 증폭수단과,Amplification means for amplifying the oscillation signal, 발진신호의 주파수를 조정하는 발진주파수조정수단과,Oscillation frequency adjusting means for adjusting the frequency of the oscillation signal, 발진신호의 전압제어감도를 조정하는 전압제어감도조정수단을 구비하는 것을 특징으로 하는 전압제어발진기.And voltage control sensitivity adjusting means for adjusting voltage control sensitivity of the oscillation signal. 제1항에 있어서,The method according to claim 1, 상기 공명기는 제어신호가 인가되는 입력단자, 가변용량성 다이오드, 메인 인덕터를 포함하고,The resonator includes an input terminal to which a control signal is applied, a variable capacitive diode, and a main inductor, 상기 발진주파수조정수단은 상기 공명기의 메인 인덕터와 병렬로 접속된 제1가변캐패시터를 포함하며,Wherein the oscillation frequency adjusting means includes a first variable capacitor connected in parallel with the main inductor of the resonator, 상기 전압제어감도조정수단은 입력단자와 상기 증폭수단 사이에 배치되는 한편, 상기 가변용량성 다이오드의 가열단자와 상기 공명기의 상기 메인 인덕터의 가열단자 사이에 배치된 제1가변캐패시터를 포함하는 것을 특징으로 하는 전압제어발진기.The voltage control sensitivity adjusting means includes a first variable capacitor disposed between an input terminal and the amplifying means and disposed between a heating terminal of the variable capacitance diode and a heating terminal of the main inductor of the resonator Voltage controlled oscillator. 제1항에 있어서,The method according to claim 1, 상기 공명기는 제어신호가 인가되는 입력단자, 가변용량성 다이오드 및 메인 인덕터를 포함하고,Wherein the resonator includes an input terminal to which a control signal is applied, a variable capacitive diode and a main inductor, 상기 발진주파수조정수단은 입력단자와 상기 증폭수단 사이에 배치되는 한편공명기의 상기 메인 인덕터와는 직렬로 접속된 제1가변인덕터를 포함하고,Wherein the oscillation frequency adjusting means includes a first variable inductor disposed between the input terminal and the amplifying means and connected in series with the main inductor of the resonator, 상기 전압제어감도 조정수단은 상기 가변용량성 다이오드의 가열단자와 제1가변인덕터의 가열단자 사이에 배치된 제1가변인덕터를 포함하는 것을 특징으로 하는 전압제어발진기.Wherein the voltage control sensitivity adjusting means includes a first variable inductor disposed between a heating terminal of the variable capacitance diode and a heating terminal of the first variable inductor. 제1항에 있어서,The method according to claim 1, 상기 공명기는 제어신호가 인가되는 입력단자, 가변용량성 다이오드, 메인 인덕터를 포함하고,The resonator includes an input terminal to which a control signal is applied, a variable capacitive diode, and a main inductor, 상기 발진주파수조정수단은 입력단자와 상기 증폭수단 사이에 배치되는 판현 공명기의 상기 메인 인덕터와는 직렬로 접속된 가변인덕터를 포함하고,The oscillation frequency adjusting means includes a variable inductor connected in series with the main inductor of the phonon resonator disposed between the input terminal and the amplifying means, 상기 전압제어감도조정수단은 상기 가변용량성 다이오드의 가열단자와 상기 가변인덕터의 가열단자 사이에 배치된 가변캐패시터를 포함하는 것을 특징으로 하는 전압제어발진기.Wherein the voltage control sensitivity adjusting means includes a variable capacitor disposed between a heating terminal of the variable capacitance diode and a heating terminal of the variable inductor. 제1항에 있어서,The method according to claim 1, 상기 공명기는 제어신호가 인가되는 입력단자, 가변용량성 다이오드, 메인 인덕터를 포함하고,The resonator includes an input terminal to which a control signal is applied, a variable capacitive diode, and a main inductor, 상기 발진주파수조정수단은 상기 공명기의 상기 메인 인덕터와 병렬로 접속된 가변캐패시터를 포함하고,Wherein the oscillation frequency adjusting means includes a variable capacitor connected in parallel with the main inductor of the resonator, 상기 전압제어감도조정수단은 상기 입력단자와 상기 증폭수단 사이에 배치되는 한편 가변용량성 다이오드의 가열단자와 상기 공명기의 메인 인덕터의 가열단자 사이에 배치된 가변인덕터를 포함하는 것을 특징으로 하는 전압제어발진기.Wherein the voltage control sensitivity adjusting means includes a variable inductor disposed between the input terminal and the amplifying means and disposed between a heating terminal of the variable capacitance diode and a heating terminal of the main inductor of the resonator, oscillator. 제1항에 있어서,The method according to claim 1, 상기 발진주파수조정수단 및 전압제어감도조정수단은 전압제어발진기의 기판표면에 형성되는 것을 특징으로 하는 전압제어발진기.Wherein the oscillation frequency adjusting means and the voltage control sensitivity adjusting means are formed on the surface of the substrate of the voltage controlled oscillator. 제2항에 있어서,3. The method of claim 2, 전압제어발진기의 기판표면 상에는 제1가변캐패시터 및 제2가변캐패시터를 구성하는 도체가 형성되는 것을 특징으로 하는 전압제어발진기.Wherein a conductor constituting the first variable capacitor and the second variable capacitor is formed on the substrate surface of the voltage controlled oscillator. 제3항에 있어서,The method of claim 3, 전압제어발진기의 기판표면 상에는 제1가변인덕터 및 제2가변인덕터를 구성하는 도체가 형성되는 것을 특징으로 하는 전압제어발진기.Wherein a conductor constituting the first variable inductor and the second variable inductor is formed on the surface of the substrate of the voltage controlled oscillator. 제4항에 있어서,5. The method of claim 4, 전압제어발진기의 기판표면 상에는 가변캐패시터 및 가변인덕터를 구성하는 도체가 형성되는 것을 특징으로 하는 전압제어발진기.Wherein a conductor constituting a variable capacitor and a variable inductor is formed on a surface of a substrate of the voltage controlled oscillator. 제5항에 있어서,6. The method of claim 5, 전압제어발진기의 기판표면 상에는 가변캐패시터 및 가변인덕터를 구성하는 도체가 형성되는 것을 특징으로 하는 전압제어발진기.Wherein a conductor constituting a variable capacitor and a variable inductor is formed on a surface of a substrate of the voltage controlled oscillator. 발진신호의 주파수를 조정하는 발진주파수조정수단을 구성하는 도체에 대하여 함수적 트리밍을 행하여 일단 대략적으로 발진주파수를 조정하는 단계와,Performing functional trimming with respect to the conductor constituting the oscillation frequency adjusting means for adjusting the frequency of the oscillation signal to once roughly adjust the oscillation frequency; 전압제어감도를 조정하는 전압제어감도조정수단을 구성하는 도체에 대하여 함수적 트리밍을 행하여 특정의 값으로 전압제어감도를 조정하는 단계와,Adjusting the voltage control sensitivity to a specific value by performing a functional trimming on the conductor constituting the voltage control sensitivity adjusting means for adjusting the voltage control sensitivity, 상기 발진주파수조정수단을 구성하는 도체에 대하여 다시 함수적 트리밍을 행하여 특정 값으로 발진주파수를 조정하는 단계를 구비하는 것을 특징으로 하는 전압제어발진기의 조정방법.And performing a functional trimming again on the conductor constituting the oscillation frequency adjusting means to adjust the oscillation frequency to a specific value. 제1가변캐패시터를 구성하는 도체 상에 함수적 트리밍을 행하여 일단 대략적으로 발진주파수를 조정하는 단계와,Performing functional trimming on a conductor constituting the first variable capacitor to adjust the oscillation frequency roughly once, 제2가변캐패시터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 특정의 값으로 전압제어감도를 조정하는 단계와,Performing functional trimming on a conductor constituting the second variable capacitor to adjust the voltage control sensitivity to a specific value; 제1가변캐패시터를 구성하는 도체에 대하여 다시 함수적 트리밍을 행하여 특정 값으로 발진주파수를 조정하는 단계를 구비하는 것을 특징으로 하는청구항 2의 전압제어발진기의 조정방법.And adjusting the oscillation frequency to a specific value by performing functional trimming again on the conductor constituting the first variable capacitor. 제1가변인덕터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 일단 대략적으로 발진주파수를 조정하는 단계와,Performing a functional trimming on a conductor constituting the first variable inductor to once roughly adjust the oscillation frequency; 제2가변인덕터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 특정의 값으로 전압제어감도를 조정하는 단계와,Adjusting the voltage control sensitivity to a specific value by performing a functional trimming on a conductor constituting the second variable inductor, 제1가변인덕터를 구성하는 도체에 대하여 다시 함수적 트리밍을 행하여 특정 값으로 발진주파수를 조정하는 단계를 구비하는 것을 특징으로 하는 청구항 3의 전압제어발진기의 조정방법.And adjusting the oscillation frequency to a specific value by carrying out functional trimming again on conductors constituting the first variable inductor. 가변인덕터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 일단 대략적으로 발진주파수를 조정하는 단계와,Performing functional trimming with respect to the conductor constituting the variable inductor to once roughly adjust the oscillation frequency; 가변캐패시터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 특정의 값으로 전압제어감도를 조정하는 단계와,Adjusting the voltage control sensitivity to a specific value by performing a functional trimming on the conductor constituting the variable capacitor, 가변인덕터를 구성하는 도체에 대하여 다시 함수적 트리밍을 행하여 특정 값으로 발진주파수를 조정하는 단계를 구비하는 것을 특징으로 하는 청구항 4의 전압제어발진기의 조정방법.And adjusting the oscillation frequency to a specific value by carrying out functional trimming again on conductors constituting the variable inductor. 가변캐패시터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 일단 대략적으로 발진주파수를 조정하는 단계와,Performing a functional trimming on a conductor constituting the variable capacitor to roughly adjust the oscillation frequency once, 가변인덕터를 구성하는 도체에 대하여 함수적 트리밍을 행하여 특정의 값으로 전압제어감도를 조정하는 단계와,Performing a functional trimming on a conductor constituting the variable inductor to adjust the voltage control sensitivity to a specific value; 가변캐패시터를 구성하는 도체에 대하여 다시 함수적 트리밍을 행하여 특정 값으로 발진주파수를 조정하는 단계를 구비하는 것을 특징으로 하는 청구항 5의 전압제어발진기의 조정방법.And adjusting the oscillation frequency to a specific value by performing functional trimming again on the conductor constituting the variable capacitor.
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