KR102735558B1 - Bolometer moudle - Google Patents

Abstract

The present embodiment relates to a thermal imaging detection module.
A my thermal imaging detection module according to the present embodiment comprises: a substrate; an electrode disposed on the substrate; a reflective layer disposed on the substrate and spaced apart from the electrode; an electrode layer disposed on the electrode and the reflective layer, the electrode layer including a bolometer layer whose temperature changes by absorbed infrared rays, wherein the bolometer layer is connected to the electrode and spaced apart from the electrode; a sensing layer disposed spaced apart from the electrode layer and including a material whose resistance changes depending on temperature; an infrared absorbing layer disposed spaced apart from the sensing layer and including an infrared absorbing material.

Description

Thermal imaging detection module {BOLOMETER MOUDLE}

The present embodiment relates to a thermal imaging detection module.

Thermal imaging detection modules generally detect infrared rays emitted from a target, and are used in surveillance cameras, medical equipment, and for detecting patients with high fever symptoms. In particular, these thermal imaging detection modules include a micro bolometer array (MBA). These micro bolometer arrays can visualize infrared rays with high resolution and can be mounted on miniaturized equipment, so they have a variety of uses.

In particular, for high-resolution yet compact thermal imaging detection modules, reducing the size of the bolometer may be essential. However, when the pixel size is reduced, it may be difficult to maintain a low temperature resolution (NETD), which is the most important factor among the performance indicators of infrared sensors.

Here, the temperature resolution represents the light absorption area, signal response, and noise ratio for the amount of light per unit area. Therefore, as the pixel size decreases, the light absorption area decreases, and it becomes difficult to have a structure with low thermal conductivity, so the temperature resolution increases.

That is, implementing a thermal imaging detection module with a miniaturized specification results in a decrease in function and performance, and conversely, it is difficult to miniaturize a thermal imaging detection module for improved functionality.

The present embodiment is designed to solve the problems of the prior art, and the purpose of the present embodiment is to provide a thermal imaging detection module.

Additionally, the present embodiment provides a thermal imaging detection module having miniaturized pixels.

Additionally, the present embodiment provides a thermal imaging detection module for enhancing thermal imaging detection performance and efficiency.

In addition, the present embodiment provides a thermal imaging detection module that can reduce the manufacturing cost of a thermal imaging detection sensor and increase manufacturing efficiency.

In addition, the present embodiment provides a thermal imaging detection module capable of increasing detection effectiveness while simplifying the manufacturing process.

The technical tasks to be achieved in the present embodiment are not limited to the technical tasks mentioned above, and other technical tasks not mentioned can be clearly understood by a person having ordinary knowledge in the technical field to which the present embodiment belongs from the description below.

A thermal imaging detection module according to an embodiment comprises: a substrate; an electrode disposed on the substrate; a reflective layer disposed on the substrate and spaced apart from the electrode; an electrode layer disposed on the electrode and the reflective layer, the electrode layer including a bolometer layer whose temperature changes by absorbed infrared rays, the bolometer layer being connected to the electrode and spaced apart from the electrode; a sensing layer disposed spaced apart from the electrode layer and including a material whose resistance changes depending on temperature; an infrared absorbing layer disposed spaced apart from the sensing layer and including an infrared absorbing material.

Additionally, the electrode layer, the sensing layer, and the absorption layer are connected by anchors.

In addition, the electrode layer includes a first electrode part having a first anchor metal formed at one end and a second anchor metal formed at the other end; and a second electrode part disposed on one side of the first electrode part and having a third anchor metal formed at one end and a fourth anchor metal formed at the other end.

Additionally, the first anchor metal and the second anchor metal are connected by the first leg, and the third anchor metal and the fourth anchor metal are connected by the second leg.

Additionally, the first leg and the second leg are formed in a serpentine shape.

Additionally, the sensing layer is disposed on an electrode layer forming a fifth anchor metal at one end and a sixth anchor metal at the other end.

Additionally, an insulating layer is included between the electrode layer and the sensing layer.

Additionally, the fifth anchor metal and the sixth anchor metal are connected by the third leg.

Additionally, the third leg is formed in a serpentine shape.

Additionally, the anchor comprises an anchor metal, and the anchor metal comprises tungsten.

Additionally, the separation distance between the substrate and the electrode layer has a first separation distance, the separation distance between the electrode layer and the sensing layer has a second separation distance, and the separation distance between the sensing layer and the infrared absorbing layer has a third separation distance.

Additionally, the first separation distance corresponds to the second separation distance.

Additionally, the first separation distance, the second separation distance and the third separation distance correspond to each other.

The effects of the thermal imaging detection module according to this embodiment are as follows.

By stacking and arranging layers that constitute a thermal imaging detection module according to the present embodiment, it is possible to achieve the effect of maintaining or increasing the detection effect while reducing the specifications of the sensor.

In addition, the thermal imaging detection module according to the present embodiment can have the effect of maintaining resolution by minimizing thermal conductivity and lowering temperature resolution even in a miniaturized form factor.

The effects that can be obtained from this embodiment are not limited to the effects mentioned above, and other effects that are not mentioned can be clearly understood by a person having ordinary skill in the art to which this embodiment belongs from the description below.

The drawings attached below are intended to aid in understanding of the present embodiment and provide embodiments of the present invention together with a detailed description. However, the technical features of the present embodiments are not limited to specific drawings, and the features disclosed in each drawing may be combined with each other to form a new embodiment.
FIG. 1 is a side view of a thermal imaging detection module according to the present embodiment.
Figure 2 is a configuration diagram of each layer constituting a thermal imaging detection module according to the present embodiment.
Figure 3 is a perspective view of a thermal imaging detection module according to the present embodiment.
FIGS. 4 to 12 illustrate a manufacturing process for manufacturing a thermal imaging detection module according to the present embodiment.

Hereinafter, the present embodiment will be described in detail with reference to the attached drawings.

In addition, terms (including technical and scientific terms) used in the present embodiments can be interpreted as having a meaning that can be generally understood by a person of ordinary skill in the technical field to which the present embodiments belong, unless explicitly and specifically defined and described, and commonly used terms such as ㅇㅇ words defined in the dictionary can be interpreted in consideration of the contextual meaning of the related technology. In addition, the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention.

In this specification, the singular may also include the plural unless specifically stated otherwise in the phrase, and when it is described as “at least one (or more than one) of A and (or) B, C,” it may include one or more of all combinations that can be combined with A, B, C. In addition, in describing components of embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used.

These terms are only intended to distinguish the component from other components, and are not intended to limit the nature, order, or sequence of the component by the terms. In addition, when a component is described as being "connected," "coupled," or "connected" to another component, it may include not only cases where the component is directly connected, coupled, or connected to the other component, but also cases where the component is "connected," "coupled," or "connected" by another component between the component and the other component.

Also, when it is described as being formed or arranged "above or below" each component, above or below includes not only the cases where the two components are in direct contact with each other, but also the cases where one or more other components are formed or arranged between the two components. Also, when it is expressed as "above or below", it can include the meaning of the downward direction as well as the upward direction based on one component.

FIG. 1 is a side view of a microbolometer according to the present embodiment, FIG. 2 is a configuration diagram of each layer constituting the microbolometer according to the present embodiment, and FIG. 3 is a perspective view of a thermal imaging detection module according to the present embodiment.

Referring to FIGS. 1 to 3, a microbolometer according to the present embodiment includes a substrate (101), an electrode layer (10), a sensing layer (20), and an absorption layer (30).

The substrate (101) may be a silicon substrate on which a readout circuit is formed. At this time, a metal electrode may be arranged on the substrate (101) to perform the functions of a readout circuit and an input/output terminal.

The reflective layer (102) may be placed on the substrate (101). The reflective layer (102) may reflect incident infrared rays to generate reflected infrared rays. The reflective layer (102) may be formed as a component of a readout circuit that determines the intensity of absorbed infrared rays (incident infrared rays, reflected infrared rays).

The electrode layer (10) may be formed of an insulating layer and an electrode. That is, the electrode layer (10) may be arranged to be spaced apart from the substrate (101) by a first critical distance (H1) by anchors (11, 12). The electrode layer (10) may include an electrode for connecting the anchors and the upper sensing layer (20). Specifically, the electrode layer (10) may be formed in a long, twisted serpentine shape as illustrated in FIG. 2. This structure may be a structure for minimizing the area of the electrode layer (10) while improving the function of the electrode layer.

The electrode layer (10) may be composed of a first electrode portion (10_1) and a second electrode portion (10_2). The first electrode portion (10_1) may include anchor metals (11, 12) at one end and the other end. In addition, the second electrode portion (10_2) may be arranged on one side of the first electrode portion (10_1) and formed to correspond to the shape of the first electrode portion (10_1). The second electrode portion (10_2) may include anchor metals (13, 14) at one end and the other end to correspond to the first electrode portion (10_1).

The anchor metal (13) formed on the other end (12) of the first electrode portion (10_1) and one end of the second electrode portion (10_2) can come into contact with the anchor of the sensing layer (20) laminated on top of the electrode layer (10).

At this time, the anchor metals (11, 12) formed at one end and the other end of the first electrode portion (10_1) can be connected to each other by the first leg. The first leg can have a serpentine shape.

In addition, the anchor metals (13, 14) formed at one end and the other end of the second electrode portion (10_2) can be connected to each other by the second leg. In addition, the second leg can have a serpentine shape.

The sensing layer (20) may be formed on the upper portion of the first electrode layer (10). The sensing layer (20) may be arranged to be spaced apart from the first electrode layer (10) by a second critical distance (H2) by anchors (21, 22). In addition, the sensing layer (20) and the anchors (21, 22) may be connected to each other by a third leg. That is, the sensing layer (20) may be laminated on the first electrode layer (10) and arranged to be spaced apart from each other by a second critical distance (H2). The anchors (21, 22) of the sensing layer (20) may include anchor metal. The sensing layer (20) may be formed in a serpentine shape as illustrated in FIG. 2. The sensing layer (20) may be formed to correspond to the sizes of the first electrode portion (10_1) and the second electrode portion (10_2) of the electrode layer (10). The sensing layer (20) may be formed of an insulating layer (25) and a sensing portion (26). That is, the sensing layer (20) may include an insulating layer (25) for insulating the sensing portion (26) from the electrode of the sensing layer (20). The sensing portion (26) may experience a temperature change due to infrared absorption. The sensing portion (26) may include vanadium pentoxide (V2O5), amorphous silicon (a-Si), titanium oxide (TiOx), or the like. These may be used alone or in combination with each other.

The absorption layer (30) has a flat structure and can be arranged on the upper side of the sensing layer (20) by an anchor (31) at a third critical distance (H3). The absorption layer (30) can include a material that absorbs infrared rays. For example, the absorption layer (30) can include titanium oxide (TiOx), molybdenum disilicide (OxSi2), tungsten silicide (WSix), titanium nitride (TiN), etc. These can be used alone or in combination. As the intensity of the absorbed infrared rays increases in the absorption layer (30), the temperature of the sensing unit (26) increases, and as the intensity of the infrared rays absorbed by the absorption layer (30) increases, the resistance of the sensing unit (26) can also decrease. When the resistance of the sensing unit (26) decreases, the current (I) flowing through the sensing unit (26) can increase. Therefore, the reading circuit of the substrate (101) can determine the intensity of infrared rays absorbed in the absorption layer (30) based on the size of the current flowing through the detection unit (26).

As described above, the microbolometer according to the present embodiment has a structure in which a substrate (101), an electrode layer (10), a sensing layer (20), and an absorption layer (30) are laminated and spaced apart from each other by a first critical distance (H1), a second critical distance (H2), and a third critical distance (H3), respectively. In addition, the substrate (101), the electrode layer (10), the sensing layer (20), and the absorption layer (30) formed by laminating each other can be interconnected by anchors and electrically connected to the electrodes of the substrate (101).

The manufacturing process of a microbolometer according to the present embodiment is described in detail with reference to FIGS. 4 to 12 below.

FIGS. 4 to 12 illustrate a manufacturing process for manufacturing a microbolometer according to the present embodiment.

FIGS. 4 to 12 are described based on cross sections cut along line A-A' of the plan views of (a), (b), and (c) of FIG. 2. FIGS. 4 to 6 relate to a manufacturing process for forming a substrate (101) of FIG. 1 and an electrode layer (10) laminated on the substrate, FIGS. 7 to 10 illustrate a manufacturing process for forming a sensing layer (20) laminated on the electrode layer (10), and FIG. 11 illustrates a manufacturing process for forming an absorption layer (30) laminated on the sensing layer (20).

As illustrated in FIG. 4, a substrate (101) is prepared. The substrate (101) may be a ROIC (Read Out Integrated Circuit) substrate including a readout circuit. A metal layer (102, 103) may be formed on the substrate (101). The metal layer (102, 103) may be patterned and formed on the substrate (101) so as to become an electrode (103) positioned below the metal reflective layer (102) and the anchor metal.

The metal layer (102, 103) can be formed through a sputtering process, a chemical vapor deposition process, an atomic layer deposition process, a vacuum deposition process, a printing process, etc. Here, the electrode (103) can be made of a conductive material through which current can flow.

As illustrated in FIG. 5, a first sacrificial layer (104) can be formed on a substrate (101) and a metal layer (102, 103). The first sacrificial layer (104) can include Spin On Carbon (SOC), Spin On Glass (SOG), polyimide, etc. These can be used alone or in combination with each other.

And, when the first sacrificial layer (104) is formed, a part of the first sacrificial layer (104) formed on the substrate (101) and the metal layer (102, 103) may be removed to form a first contact hole (105) in which the electrode is exposed. For example, a part of the first sacrificial layer (104) may be partially etched to create the first contact hole (105). And, after the first contact hole (105) is formed, a first insulating layer (106) may be formed on the first sacrificial layer (104) and a part of the first contact hole (105) formed on the first sacrificial layer (104). The first insulating layer (106) may serve to support the sensing layer (20) and the absorption layer (30) that are laminated thereon. The first insulating layer (106) may be made of an insulating material that blocks current. For example, the first insulating layer (106) may include silicon oxide (SiOx), silicon oxynitride (SiOxNx), aluminum oxide (AlOx), tantalum oxide (TaOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx), etc. These may be used alone or in combination with each other.

Next, as illustrated in FIG. 6, a first electrode layer (107) may be formed on the first insulating layer (106). The first electrode layer (107) may be formed on the inside of the first insulating layer (106) and the first contact hole (105). That is, the first electrode layer (107) may be formed to be in contact with the metal layer (103) on the substrate (101) exposed by the first contact hole (105). That is, the first electrode layer (107) may be formed on the upper surface of the first insulating layer (106) and the metal layer (103) on the substrate (101) formed in the first contact hole (105) from the upper surface of the first insulating layer (106).

In addition, a second insulating layer (108) may be formed on the upper surface of the first electrode layer (107). The second insulating layer (108) may be formed on the upper surface of the first electrode layer (107) formed on the first insulating layer (106) and the first contact hole (105). The second insulating layer (108) may include silicon oxide (SiOx), silicon oxynitride (SiOxNx), aluminum oxide (AlOx), tantalum oxide (TaOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx), or the like. These may be used alone or in combination with each other.

And, when the first electrode layer (107) and the second insulating layer (108) are formed, a second contact hole (109) penetrating a portion of the first insulating layer (106), the first electrode layer (107), and the second insulating layer (108) can be formed. The second contact hole (109) can be patterned by etching a portion of the first insulating layer (106), the first electrode layer (107), and the second insulating layer (108). The second contact hole (109) can be formed in a plurality of (109a, 109b, 109c). The plurality of second contact holes (109a, 109b, 109c) can be formed to remove the sacrificial layer (104) of the electrode layer (10).

As described above, the process of forming an electrode layer (10) spaced apart from each other by a first spacing interval (H1) on a substrate (101) according to the manufacturing process of FIGS. 4 to 6 is described. Hereinafter, FIGS. 7 to 10 describe the manufacturing process of a sensing layer (20) laminated on the electrode layer (10).

As illustrated in FIG. 7, a second sacrificial layer (110) is formed on the first insulating layer (106), the first electrode layer (107), the second insulating layer (108), and the second contact hole (109) forming the electrode layer (10). The second sacrificial layer (110) may include spin on carbon (SOC), spin on glass (SOG), polyimide, etc. These may be used alone or in combination with each other.

After the second sacrificial layer (110) is formed, a part of the second sacrificial layer (110) may be etched to form a third contact hole (111). The third contact hole (111) may be formed so that a part of the second sacrificial layer (110) penetrates from the upper surface to the second insulating layer (108) of the electrode layer (10). That is, the third contact hole (111) may be formed so that a part of the electrode layer (107) of the sensing layer (10) is exposed. This third contact hole (111) may allow the electrode layer of the sensing layer (20) and the electrode layer (107) of the electrode layer (10) to be in contact, thereby connecting them to the metal layer (103) of the substrate (101).

Next, as illustrated in FIG. 8, a third insulating layer (112) may be formed on a portion of the second sacrificial layer (110) and the third contact hole (111). The third insulating layer (110) may extend from the upper surface of the second sacrificial layer (110) and be formed on a portion of the inner surface and bottom surface of the third contact hole (111). That is, the third insulating layer (110) may be formed only on a portion of the third contact hole (111) to expose a portion of the first electrode layer (107).

And, a second electrode layer (113) may be formed on the upper surface of the third insulating layer (112) and the third contact hole (111). Specifically, the second electrode layer (113) may be formed on the inner side of the third insulating layer (11) and the third contact hole (111). That is, the second electrode layer (113) may be formed to be in contact with the first electrode layer (107) partially exposed by the third contact hole (111).

After the second electrode layer (113) is formed, a fourth insulating layer (114) may be formed on the second electrode layer (113) and the third contact hole (111). The fourth insulating layer (114) may extend from the upper surface of the second electrode layer (113) and be connected to the third contact hole (111). The fourth insulating layer (114) may include silicon oxide (SiOx), silicon oxynitride (SiOxNx), aluminum oxide (AlOx), tantalum oxide (TaOx), hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx), or the like. These may be used alone or in combination with each other.

As illustrated in FIG. 9, a fourth contact hole (115) penetrating a portion of the third insulating layer (112), the second electrode layer (113), and the fourth insulating layer (114) and a fifth contact hole (116) penetrating the second electrode layer (113) and the fourth insulating layer (114) can be formed. The fourth contact hole (115) can be patterned by etching a portion of the third insulating layer (112), the second electrode layer (113), and the fourth insulating layer (114). The fourth contact hole (115) can be formed in multiple numbers (115a, 115b, 115c, 115d, 115e, 115f). The above-described plurality of fourth contact holes (115a, 115b, 115c, 115d, 115e, 115f) may be formed with a function of removing the second sacrificial layer (110). In addition, the fifth contact hole (116) may be formed by etching from the fourth insulating layer (114) to the second electrode layer (113) so that a part of the third insulating layer (112) is exposed, instead of being etched from the fourth insulating layer (114) to the third insulating layer (112) like the fourth contact hole (115). That is, the above-described partial contact hole (115a) has a structure for forming a sensing unit, and the sensing unit may be formed in the above-described fifth contact hole (115a).

That is, an additional etching process can be performed on the fifth contact hole (116) to form a sensing portion. Specifically, a portion of the fourth insulating layer (114) can be additionally etched to form a portion of the second electrode layer (113) exposed to the fifth contact hole (116). That is, by exposing a portion of the second electrode layer (113), the sensing portion and the electrode formed on the upper portion of the second electrode layer (113) can be electrically connected.

Specifically, as illustrated in FIG. 10, a sensing unit (117) may be formed in the fifth contact hole (116). The sensing unit (117) may be formed using a chemical vapor deposition process, a thermal oxidation process, a plasma-enhanced etching vapor deposition process, a high-density plasma-chemical vapor deposition process, or the like. Here, the sensing unit (117) may include a material whose resistance changes depending on temperature. For example, the sensing unit (117) may include vanadium pentoxide (V2O5), amorphous silicon (a-Si), titanium oxide (TiOx), or the like. These may be used alone or in combination with each other.

At this time, a fifth insulating layer (118) may be formed on the upper surface of the sensing portion (117). Specifically, the fifth insulating layer (118) may cover the sensing portion (117) and be insulated from a portion of an absorption layer formed on the upper surface of the sensing portion (117). In addition, the fifth insulating layer (118) may be formed to be connected to the fourth insulating layer (114). That is, the fifth insulating layer (118) may be formed on the upper surface of the sensing portion (117) and a portion of the upper surface of the fourth insulating layer (114), so that the fourth insulating layer (114) and the fifth insulating layer (118) may be formed to be in contact with a portion of the process.

In addition, a sixth contact hole (119) may be formed in a portion of the fifth insulating layer (118). The sixth contact hole (119) may be patterned through an etching process on a portion of the upper surface of the fifth insulating layer (118). The sixth contact hole (119) may perform a function of contacting a portion of an absorption layer to be laminated on top of the sensing portion (117).

As illustrated in FIG. 11, a third sacrificial layer (120) is formed on the upper surfaces of the fourth insulating layer (114), the fifth contact hole (115), and the fifth insulating layer (118), and a seventh contact hole (121) may be formed on a portion of the third sacrificial layer (120). Specifically, the third sacrificial layer (120) may be formed on the upper surface of the fourth insulating layer (114), the inner side of the fifth contact hole (115), and a portion of the fifth insulating layer (118). Thereafter, a seventh contact hole (121) having a size larger than that of the sixth contact hole (119) may be formed at a position corresponding to the sixth contact hole (119) in the second sacrificial layer (120). The seventh contact hole (121) may be formed to expose a portion of the fifth insulating layer (118) and a portion of the sensing portion (117).

In addition, an absorption layer (122) may be formed on the upper surface of the third sacrificial layer (120) and the seventh contact hole (121). The absorption layer (122) may be formed on the upper surface of the sensing portion (117). The absorption layer (122) may be formed by a deposition process. The absorption layer (122) may include a material for infrared absorption. The absorption layer (122) may include at least one of titanium oxide (TiOx), molybdenum disilicate (MoSiO2), tungsten sintering (WSix), or titanium nitride (TiN).

And, an eighth contact hole (123) may be formed in a part of the absorption layer (122). Specifically, the eighth contact hole (123) may be formed at a position corresponding to the seventh contact hole (121). The eighth contact hole (123) may be formed by etching a part of the absorption layer (122). The eighth contact hole (123) may perform a function for removing the third sacrificial layer (120).

That is, as illustrated in FIG. 12, the first sacrificial layer (104), the second sacrificial layer (110), and the third sacrificial layer (120) can be removed through the second contact hole (109), the fifth contact hole (115), and the eighth contact hole (123). The first sacrificial layer (104), the second sacrificial layer (110), and the third sacrificial layer (120) can be removed by dry etching. That is, the first sacrificial layer (104), the second sacrificial layer (110), and the third sacrificial layer (120) can be removed by using a reactive gas, ion, or decomposed water injected through the second contact hole (109), the fifth contact hole (115), and the eighth contact hole (123).

As described above, the microbolometer from which the sacrificial layer (104, 110, 120) has been removed can have the effect of reducing the size and improving the functionality by laminating the electrode layer (10), the sensing layer (20), and the absorption layer (30) on the substrate (101) at a first separation distance (H1), a second separation distance (H2), and a third separation distance (H3). In addition, the separation distances may be formed to correspond to each other or may be formed at different heights depending on the embodiment.

The above detailed description should not be construed as restrictive in all respects but should be considered as illustrative. The scope of the invention should be determined by a reasonable interpretation of the appended claims, and all changes coming within the equivalent scope of the invention are intended to be embraced within the scope of the invention.

The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified and implemented in other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the above has been described with reference to embodiments, these are merely examples and do not limit the present invention, and those with ordinary skill in the art to which the present invention pertains will recognize that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present embodiments. For example, each component specifically shown in the embodiments can be modified and implemented. And, the differences related to such modifications and applications should be interpreted as being included in the scope of the present invention defined in the appended claims.

Claims (13)

substrate;
An electrode disposed on the above substrate;
A reflective layer disposed on the substrate and spaced apart from the electrode;
A bolometer layer is disposed on the above electrode and the above reflective layer, and the temperature thereof changes due to absorbed infrared rays.
The above bolometer layer is,
An electrode layer disposed on the above electrode and spaced apart from the above electrode;
A sensing layer disposed spaced apart from each other on the electrode layer and including a material whose resistance changes depending on temperature;
An infrared absorbing layer disposed spaced apart from the sensing layer and including an infrared absorbing material;
Anchors connecting the electrode layer, the sensing layer and the absorption layer; and
comprising a leg connected to the above anchor;
The separation distance between the substrate and the electrode layer has a first separation distance,
The separation distance between the electrode layer and the sensing layer has a second separation distance,
The separation distance between the above sensing layer and the above infrared absorbing layer is a third separation distance,
The first separation distance, the second separation distance and the third separation distance correspond to each other.
Thermal imaging detection module. In the first paragraph,
The above electrode layer
A first electrode part having a first anchor metal formed at one end and a second anchor metal formed at the other end;
It includes a second electrode part, which is arranged on one side of the first electrode part, and has a third anchor metal formed on one end and a fourth anchor metal formed on the other end;
The above leg
a first leg connecting the first anchor metal and the second anchor metal; and
A thermal imaging detection module comprising a second leg connecting the third anchor metal and the fourth anchor metal. In the second paragraph,
The above detection layer
It is placed on an electrode layer forming a fifth anchor metal at one end and a sixth anchor metal at the other end,
The above leg,
Including a third leg connecting the fifth anchor metal and the sixth anchor metal,
The above bolometer layer
A thermal imaging detection module including an insulating layer disposed between the electrode layer and the detection layer. In the third paragraph,
The first to third legs are thermal imaging detection modules formed in a serpentine shape. delete delete delete delete delete delete delete delete delete