KR102717705B1 - Light emitting diode package - Google Patents

Abstract

The present invention relates to a light emitting diode package, and the present invention provides a light emitting diode package including: a lead frame including first and second lead members which are spaced apart from each other; a housing including a first region which supports the lead frame and exposes a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing includes a first reflective surface which extends obliquely from an outer side of the housing toward the first region, and a second reflective surface which extends obliquely from the first reflective surface to an upper surface of at least one of the first and second lead members exposed in the first region, and wherein the inclination angle of the second reflective surface is greater than the inclination angle of the first reflective surface. According to the present invention, by forming the inclination angle of the inner side wall of the housing of the light emitting diode package gradually, the luminous efficiency of the light emitting diode package can be increased.

Description

LIGHT EMITTING DIODE PACKAGE

The present invention relates to a light emitting diode package, and more specifically, to a light emitting diode package having a reflective surface formed in a housing.

Light-emitting diodes are inorganic semiconductor devices that emit light generated by the recombination of electrons and holes. Recently, they have been used in various fields such as displays, automobile lamps, and general lighting. These light-emitting diodes have the advantages of long life, low power consumption, and fast response speed. Accordingly, light-emitting devices used in light-emitting diodes are used as light sources in various fields.

A conventional light emitting diode package is packaged by a housing while the light emitting diode chip is placed on a lead frame. Then, the inner wall of the housing has a predetermined angle so that light emitted from the light emitting diode chip can be reflected from the inner wall of the packaged housing.

At this time, the electrical connection between the light-emitting diode chip and the lead frame can be made using wires, but in order to wire-bond the light-emitting diode chip, a certain amount of space needs to be formed between the light-emitting diode chip and the inner wall of the housing. However, in order to secure the space in which the light-emitting diode chip is mounted while the housing size is fixed, the inner wall of the housing cannot help but be formed nearly vertically, and as a result, there is a problem in that the inner wall of the housing does not play a significant role as a reflective surface.

The problem to be solved by the present invention is to provide a light-emitting diode package capable of increasing light-emitting efficiency through reflection on the inner wall of a housing.

The present invention provides a light emitting diode package comprising: a lead frame including first and second lead members spaced apart from each other; a housing supporting the lead frame and including a first region exposing a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing includes a first reflective surface extending obliquely from an outer side of the housing toward the first region and a second reflective surface extending obliquely from the first reflective surface to an upper surface of at least one of the first and second lead members exposed in the first region, wherein an inclination angle of the second reflective surface is greater than an inclination angle of the first reflective surface.

Meanwhile, the present invention provides a light emitting diode package, comprising: a lead frame including first and second lead members spaced apart from each other; a housing supporting the lead frame and including a first region exposing a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing extends obliquely from an outer side of the housing toward the first region, and an area of the first region is 10% to 30% of a planar area of the light emitting diode package.

In another aspect, the present invention provides a light emitting diode package comprising: a lead frame including first and second lead members spaced apart from each other; a housing including a first region that supports the lead frame and exposes a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing includes a top surface formed at an upper end and a reflective surface that extends obliquely from an outer side of the housing toward the first region, and a step is formed between the top surface and the reflective surface.

In another aspect, the present invention provides a light emitting diode package comprising: a lead frame including first and second lead members which are spaced apart from each other; a housing which supports the lead frame and includes a first region exposing a portion of an upper surface of one of the first and second lead members and a second region exposing a portion of an upper surface of the other of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing includes a reflective surface extending obliquely from an outer side of the housing toward the first region, and an inclined surface extending obliquely from the reflective surface to an upper surface of the other of the first and second lead members exposed in the second region.

According to the present invention, the light-emitting efficiency of the light-emitting diode package can be increased by forming the angle of inclination of the inner wall of the housing of the light-emitting diode package gradually.

And as described above, in order to prevent the size of the exposed area of the lead frame on which the light-emitting diode chip can be mounted from being reduced by forming the angle of inclination of the inner wall of the housing gradually in order to increase the light-emitting efficiency of the light-emitting diode package, the inner wall of the housing includes first and second reflective surfaces, and by making the angle of inclination of the second reflective surface greater than the angle of inclination of the first reflective surface, the size of the exposed area of the lead frame can be prevented from being reduced.

In addition, by increasing the angle of inclination of the inner wall end of the housing, which is a reflective surface, the space for mounting the light-emitting diode chip can be maximized. Furthermore, by making the angle of the inner wall end of the housing less than 90 degrees, the light reflected from the end can be emitted to the outside, thereby increasing the light-emitting efficiency of the light-emitting diode package.

And, since the upper surface of the housing has a predetermined width and protrudes to have a step with the reflective surface, the sealing material can be prevented from overflowing to the outside of the housing during the process of filling the inside of the housing with the sealing material and forming it.

Furthermore, by making the width of the corner side larger than the width of the side side of the upper surface of the housing, it is possible to prevent problems such as the housing being broken even if an external impact occurs during the manufacturing process. In addition, the shape of the corner side of the upper surface of the housing can be formed to have a curve and the shape of the reflective surface can also be formed to have a curve, so that the efficiency of light emitted from the light-emitting diode chip being reflected by the reflective surface on the corner side can be increased.

In addition, since the second region is formed in the housing so that the second lead member is exposed, and the housing is formed to protrude upward between the first region and the second region, light emitted from the light-emitting diode chip does not directly reach the Zener diode, thereby minimizing light loss due to the Zener diode.

In addition, the upper surface of the partition wall arranged between the first region and the second region includes a first reflective surface, a second reflective surface, and a second inclined surface, and since the second inclined surface is inclined downward from the second reflective surface toward the second region, the process of wire bonding the zener diode to the first lead member of the first region is easy, and the length of the wire is shortened, so that there is an effect of reducing optical interference caused by the wire.

FIG. 1 is a perspective view illustrating a light emitting diode package according to a first embodiment of the present invention.
FIG. 2 is a plan view illustrating a light emitting diode package according to the first embodiment of the present invention.
Figure 3 is a cross-sectional view taken along the cutting line AA' of Figure 2.
FIG. 4 is a perspective view illustrating a light emitting diode package according to a second embodiment of the present invention.
FIG. 5 is a plan view illustrating a light emitting diode package according to a second embodiment of the present invention.
Figure 6 is a cross-sectional view taken along the cutting line AA' of Figure 5.
FIG. 7 is an exemplary diagram illustrating a light emitting diode package including a sealing material according to a second embodiment of the present invention.
FIG. 8 is a perspective view illustrating a light emitting diode package according to a third embodiment of the present invention.
FIG. 9 is a plan view illustrating a light emitting diode package according to a third embodiment of the present invention.
Fig. 10 is a cross-sectional view taken along the cutting line AA' of Fig. 2.
FIG. 11 is a cross-sectional view illustrating a light emitting diode package according to a fourth embodiment of the present invention.
FIG. 12 is a cross-sectional view illustrating a light emitting diode package according to a fifth embodiment of the present invention.
FIG. 13 is a cross-sectional view illustrating a light emitting diode package according to the sixth embodiment of the present invention.
FIG. 14 is a cross-sectional view illustrating a light emitting diode package according to the seventh embodiment of the present invention.

According to one embodiment of the present invention, a light emitting diode package comprises: a lead frame including first and second lead members spaced apart from each other; a housing supporting the lead frame and including a first region exposing a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing includes a first reflective surface extending obliquely from an outer side of the housing toward the first region and a second reflective surface extending obliquely from the first reflective surface to an upper surface of at least one of the first and second lead members exposed in the first region, and an inclination angle of the second reflective surface may be greater than an inclination angle of the first reflective surface.

And the second reflective surface may include a groove that additionally exposes the lead frame to the first area for wire bonding the light emitting diode chip.

Additionally, the housing may further include a second region exposing a portion of an upper surface of the other of the first and second lead members for wire bonding the light emitting diode chip, and may further include a zener diode mounted in the second region.

Alternatively, the lead frame may further include a Zener diode mounted on the lead frame and positioned within the housing.

And the area of the first region can be 10% to 30% of the planar area of the light emitting diode package.

Here, the height of the second reflective surface may be lower than the height of the light-emitting diode chip.

The light-emitting diode chip may include an n-type semiconductor layer; a p-type semiconductor layer; and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, and the height of the second reflective surface may be lower than the height of the active layer.

Meanwhile, a light emitting diode package according to one embodiment of the present invention comprises: a light emitting diode package, comprising: a lead frame including first and second lead members spaced apart from each other; a housing supporting the lead frame and including a first region exposing a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing extends obliquely from an outer side of the housing toward the first region, and an area of the first region may be 10% to 30% of a planar area of the light emitting diode package.

Here, the housing includes a first reflective surface extending obliquely from an outer side of the housing toward the first region, and a second reflective surface extending obliquely from the first reflective surface to an upper surface of one of the first and second lead members exposed to the first region, and the inclination angles of the first reflective surface and the second reflective surface may be different from each other.

At this time, the height of the second reflective surface may be lower than the height of the light-emitting diode chip.

And the light-emitting diode chip may include an n-type semiconductor layer; a p-type semiconductor layer; and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the height of the second reflective surface may be lower than the height of the active layer.

Meanwhile, a light emitting diode package according to one embodiment of the present invention comprises: a lead frame including first and second lead members spaced apart from each other; a housing including a first region that supports the lead frame and exposes a portion of an upper surface of at least one of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing includes a top surface formed at an upper end and a reflective surface extending obliquely from an outer side of the housing toward the first region, and a step may be formed between the top surface and the reflective surface.

And the upper surface of the housing may include an inner line including a first straight line and a curved line and an outer line including a second straight line.

Additionally, the top surface of the housing may have different widths on the side and corner sides of the housing.

Here, the width of the edge side can be 3 to 7 times the width of the side side.

And the housing may further include a second region exposing a portion of an upper surface of the other one of the first and second lead members for bonding the light emitting diode chip.

Here, a Zener diode mounted in the second region may be further included.

Alternatively, the lead frame may further include a Zener diode mounted on the lead frame and positioned within the housing.

At this time, the light-emitting diode chip may include an n-type semiconductor layer; a p-type semiconductor layer; and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, and may further include a sealing material covering the first region and the reflective surface.

And the housing has two or more sides, and the width of the reflective surface located on the two or more sides can be four to seven times the width of the upper surface adjacent to the reflective surface.

Meanwhile, a light emitting diode package according to one embodiment of the present invention comprises: a lead frame including first and second lead members spaced apart from each other; a housing supporting the lead frame and including a first region exposing a portion of an upper surface of one of the first and second lead members and a second region exposing a portion of an upper surface of the other of the first and second lead members; and a light emitting diode chip mounted in the first region of the housing, wherein the housing may include a reflective surface extending obliquely from an outer side of the housing toward the first region, and an inclined surface extending obliquely from the reflective surface to an upper surface of the other of the first and second lead members exposed in the second region.

Here, the second region may be surrounded by the reflective surface.

And the inclined surface may include a first inclined surface formed to be inclined from a reflective surface located on the first region side to an upper surface of another one of the first and second lead members exposed to the second region.

Here, the first inclined surface may have a different inclination direction from the reflective surface, and the first inclined surface may be a reflective surface.

In addition, the inclined surface may include a second inclined surface formed to be inclined from a reflective surface located on the outside of the housing toward an upper surface of the other of the first and second lead members exposed in the second area, and the second inclined surface may have a greater inclination angle than the reflective surface. Here, the second inclined surface may be a reflective surface.

And it may further include a Zener diode mounted in the second region, and the thickness of the Zener diode may be smaller than the height of the end of the second region side of the reflective surface surrounding the second region on the mounting surface of the Zener diode.

A preferred embodiment of the present invention will be described in more detail with reference to the attached drawings.

FIG. 1 is a perspective view illustrating a light emitting diode package according to a first embodiment of the present invention, FIG. 2 is a plan view illustrating a light emitting diode package according to the first embodiment of the present invention, and FIG. 3 is a cross-sectional view taken along the cutting line AA' of FIG. 2.

As illustrated in FIGS. 1 and 2, a light emitting diode package (100) according to the first embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a Zener diode (140).

At least one light-emitting diode chip (110) is provided and is placed on a lead frame (120). In addition, at least one light-emitting diode chip (110) can emit light by power supplied from an external source, and light emitted from the light-emitting diode chip (110) can be emitted to the outside. As illustrated in FIG. 3, the light-emitting diode chip (110) includes an n-type semiconductor layer (116), an active layer (114), and a p-type semiconductor layer (112).

The n-type semiconductor layer (116), the active layer (114), and the p-type semiconductor layer (112) may each include a compound semiconductor of the III-V group, and for example, may include a nitride semiconductor such as (Al, Ga, In)N. In this embodiment, the active layer (114) is formed on the n-type semiconductor layer (116), and the p-type semiconductor layer (112) is formed on the active layer (114). However, the positions of the n-type semiconductor layer (116) and the p-type semiconductor layer (112) may be changed as needed.

The n-type semiconductor layer (116) may include an n-type impurity (e.g., Si), and the p-type semiconductor layer (112) may include a p-type impurity (e.g., Mg). The active layer (114) is interposed between the n-type semiconductor layer (116) and the p-type semiconductor layer (112), and may include a multiple quantum well structure (MQW). In addition, the composition ratio of the active layer (114) may be adjusted so as to emit light of a desired peak wavelength.

In this embodiment, the light emitting diode chip (110) may include a p-type electrode electrically connected to a p-type semiconductor layer (112) and an n-type electrode electrically connected to an n-type semiconductor layer (116). Although not particularly limited, as an example, the n-type electrode may be electrically connected to the n-type semiconductor layer (116) through a via or the like penetrating the active layer (114) and the p-type semiconductor layer (112).

The lead frame (120) includes first and second lead members (122, 124), and the first and second lead members (122, 124) are arranged spaced apart from each other. The lead frame (120) may have a flat plate shape, and both the top and bottom surfaces may be flat. In addition, the first lead member (122) has a larger area than the second lead member (124), and a light-emitting diode chip (110) is mounted on the relatively large first lead member (122). The lead frame (120) is provided to supply power to the light-emitting diode chip (110), and the light-emitting diode chip (110) and the first and second lead members (122, 124) may be electrically connected by wire bonding, respectively.

In this embodiment, the lead frame (120) may have a shape in which the upper part of the side protrudes more than the lower part, as illustrated in FIG. 3. That is, each of the first and second lead members (122, 124) may have a step formed on the side, and the step formed on the side of the first and second lead members (122, 124) may have a shape in which the upper part protrudes from the side. Accordingly, the first and second lead members (122, 124) may have a larger contact area with the housing (130), thereby increasing the bonding strength.

In addition, as the lower side of the first and second lead members (122, 124) becomes narrower than the upper side, the size of the first and second lead members (122, 124) exposed to the lower side of the light-emitting diode package (100) can be reduced. Accordingly, the gap between the first and second lead members (122, 124) exposed to the lower side of the light-emitting diode package (100) can be widened, so that when the external device and the light-emitting diode package (100) are electrically coupled, the first and second lead members (122, 124) can be minimized from being electrically shorted.

The housing (130) has a shape that surrounds each side of the first and second lead members (122, 124) to support the lead frame (120). Accordingly, the space between the first and second lead members (122, 124) is also filled by the housing (130), and the first and second lead members (122, 124) can be electrically isolated from each other. Here, the housing (130) is not formed in a shape that covers the entirety of the first and second lead members (122, 124), but has a shape that exposes a part of the upper surface of the first lead member (122), and the size and shape of the light-emitting diode package (100) are determined according to the external dimensions and shape of the housing (130).

The housing (130) has a shape that completely surrounds the side of the lead frame (120) while exposing a part of the first lead member (122) at the top, and thus is thicker than the lead frame (120). In addition, the thickness of the housing (130) may become thicker as it goes outward from the area where the first lead member (122) is exposed. That is, as shown in FIGS. 1 and 3, the upper surface of the housing (130) is formed with a first area (h1) where the first lead member (122) is exposed so that a light-emitting diode chip (110) is placed at the inner center, and an inner surface that slopes upward as it goes outward from the housing (130).

At this time, the inner surface of the housing (130) is formed as an upwardly inclined slope in the outer direction, and the inclined surface includes first and second reflective surfaces (132, 134). The first reflective surface (132) is formed to be inclined downwardly in the inner direction from the outer upper end of the housing (130), and occupies most of the inner surface of the housing (130).

Here, the area of the first region (h1) on the plan view illustrated in Fig. 2 may be 10% to 30% of the total area of the light-emitting diode package (100). As the area of the first region (h1) is formed smaller than the total area of the light-emitting diode package (100), the area occupied by the first reflective surface (132) in the light-emitting diode package (100) may increase, and as the area of the first reflective surface (132) increases, the luminous efficiency of the light-emitting diode package (100) may increase.

At this time, if the area of the first region (h1) exceeds 30% of the total area of the light emitting diode package (100), the light emitting efficiency of the light emitting diode package (100) may decrease. In addition, if it becomes smaller than 10%, the size of the light emitting diode chip (110) that can be mounted on the light emitting diode package (100) may be limited, which may decrease the usability of the light emitting diode package (100), and the space in which the light emitting diode chip (110) can be mounted and wire bonded may become smaller, which may cause defects in the manufacturing process. Accordingly, as described above, it may be advantageous for the area of the first region (h1) to be 10% to 30% of the total area of the light emitting diode package (100).

And as described above, as the area of the reflective surface (132) of the light-emitting diode package (100) increases, the width of the first region (h1) decreases relatively, and accordingly, the area of the first lead member (122) exposed to the first region (h1) decreases. As the area of the first lead member (122) decreases, even if the first lead member (122) discolors, the area where the first lead member (122) discolors is reduced compared to before, and thus the light-emitting efficiency of the light-emitting diode package (100) due to the discoloration of the first lead member (122) can be improved.

In addition, as illustrated in FIG. 2, when comparing the width of the first region (h1) and the width of the first reflective surface (132), the width (b2) of the first reflective surface (132) may be about 33% to 133% of the width (b1) of the first region (h1) in one direction on the plane of the light emitting diode package (100). That is, when the size of the light emitting diode package (100) is constant, the area of the first region (h1) may vary depending on the size of the light emitting diode chip (110). Accordingly, the area of the first reflective surface (132) may also vary, but in consideration of the light emitting efficiency of the light emitting diode package (100) according to the present embodiment, the relationship between the width (b1) of the first region (h1) and the width (b2) of the first reflective surface (132) may be determined as described above.

In this embodiment, a predetermined surface is formed on the top of the housing (130), and a step may be formed between the first reflective surface (132) and the upper surface of the housing (130). That is, the upper surface of the housing (130) may be positioned somewhat higher than the first reflective surface (132). As a step is formed between the first reflective surface (132) and the upper surface of the housing (130), when the sealing material is formed to cover the light-emitting diode chip (110) while covering the first reflective surface (132), the sealing material can be prevented from being formed to overflow to the outside beyond the upper surface of the housing (130).

And the inner end of the first reflective surface (132) may be positioned above the first lead member (122) so that a step is formed between the upper surface of the first lead member (122) exposed on the inner side of the housing (130). That is, even if the first reflective surface (132) slopes inward from the outer upper end of the housing (130), it does not extend to the upper surface of the first lead member (122) exposed in the first region (h1).

As the first reflective surface (132) does not come into contact with the upper surface of the first lead member (122) exposed to the first region (h1), the first reflective surface (132) can have a relatively gentle slope compared to the case where the first reflective surface (132) comes into contact with the upper surface of the first lead member (122).

And the second reflective surface (134) may be extended from the inner end of the first reflective surface (132) and may be extended to come into contact with the first lead member (122) exposed to the first region (h1). At this time, the point where the second reflective surface (134) and the exposed first lead member (122) come into contact may be spaced apart from the light-emitting diode chip (110) mounted on the exposed first lead member (122) by a certain distance or more.

In addition, a groove (136) may be formed on the inner slope of the housing (130) at a portion of the position where the first region (h1) is formed. The groove (136) formed in the first region (h1) additionally exposes a portion of the first lead member (122), and a wire may be bonded to the position of the first lead member (122) exposed by the groove (136). Although the groove (136) is shown in the drawing as being formed at the center of the side of the first region (h1) in the present embodiment, the groove (136) may be formed at a corner side or another side of the first region (h1).

When the groove (136) is arranged in the center of the side of the first region (h1), the length of the wire electrically connecting the light-emitting diode chip (110) and the first lead member (122) is shortened, thereby reducing optical interference caused by the wire. In addition, when the groove (136) is formed on the edge side of the first region (h1), the groove (136) can be formed in a small size, and as the size of the groove (136) decreases, the area of the first reflective surface (132) can increase, thereby increasing the reflectivity of light emitted from the light-emitting diode chip (110).

And in the present embodiment, a second region (h2) in which the second lead member (124) is exposed may be formed on the first reflective surface (132). As the second region (h2) is formed, a portion of the upper surface of the second lead member (124) is exposed, and a zener diode (140) may be mounted on the upper surface of the exposed second lead member (124). In addition, the second lead member (124) exposed in the second region (h2) may be electrically connected to the light-emitting diode chip (110) by wire bonding.

The Zener diode (140) is provided to prevent the light-emitting diode chip (110) from being damaged by static electricity that may be generated when power is supplied from the outside. In this embodiment, the Zener diode (140) is described as being mounted in the second region (h2), but if necessary, the Zener diode (140) may be positioned inside the housing (130) and not exposed to the outside. In addition, the Zener diode (140) may be mounted in any of the first and second lead members (122, 124).

At this time, the Zener diode (140) may be packaged by the housing (130) while being mounted on one of the first and second lead members (122, 124), and may be packaged in a state where it is completely covered by a resin or the like forming the housing (130). When the Zener diode (140) is packaged in the housing (130) in this way, the Zener diode (140) is not exposed to the outside, so the area of the first reflective surface (132) may increase compared to when the Zener diode (140) is exposed to the outside, thereby increasing the light-emitting efficiency of the light-emitting diode package (100).

Referring also to FIG. 3, the first and second reflective surfaces (132, 134) will be described in more detail.

As described above, the first reflective surface (132) is formed to be inclined downward toward the center of the light emitting diode package (100) at a position that is stepped from the outer upper surface of the housing (130). In addition, the second reflective surface (134) is formed from the inner end of the first reflective surface (132) to the upper surface of the first lead member (122) of the first region (h1). At this time, as illustrated in FIG. 3, the first reflective surface (132) and the second reflective surface (134) have different inclination angles, and the inclination angle (a) of the first reflective surface (132) may be smaller than the inclination angle (b) of the second reflective surface (134) (a<b).

As the second reflective surface (134) having a relatively large inclination angle (b) is formed at the inner end of the first reflective surface (132), the size of the first region (h1) can be secured to the maximum extent. At this time, the inclination angle (b) of the second reflective surface (134) can have an angle of 45 to 90 degrees (45≤b≤90). Accordingly, compared to a case where the first reflective surface (132) is extended with the same inclination angle (a) and comes into contact with the first lead member (122), the area of the first region (h1) can be relatively widened as the second reflective surface (134) is formed, and thus the degree of freedom with respect to the size of the light-emitting diode chip (110) mounted on the first region (h1) can be increased.

At this time, if the inclination angle of the second reflective surface (134) becomes smaller than 45 degrees, the space in which the light-emitting diode chip (110) can be mounted in the first region (h1) is reduced accordingly, making it difficult to secure space for the process of mounting the light-emitting diode chip (110) and space for wire bonding.

In addition, the distance between the inner end of the first reflective surface (132) and the upper surface of the first lead member (122), that is, the height (d1) of the second reflective surface (134), may be smaller than the thickness (d3) of the light-emitting diode chip (110), and more preferably, may be smaller than the distance (d2) from the upper surface of the first lead member (122) to the active layer (114) of the light-emitting diode chip (110) (d1<d2<d3). That is, the height (d1) of the inner end of the first reflective surface (132) may be arranged at a position lower than the height (d3) of the light-emitting diode chip (110) so that light emitted from the light-emitting diode chip (110) may be reflected by the first reflective surface (132), and may be lower than the height (d2) of the n-type semiconductor layer (116). Here, the height (d1) of the second reflective surface can be 50 μm to 300 μm.

Here, since light is generated and emitted from the active layer (114) of the light emitting diode chip (110), if the inner end height (d1) of the second reflective surface (134) is higher than the position (d2) of the active layer (114), the light emitted from the active layer (114) is often reflected from the second reflective surface (134), which may reduce the light emission efficiency of the light emitting diode package (100). This is because the second reflective surface (134) has a greater inclination angle than the first reflective surface (132), and thus the reflection efficiency of the second reflective surface (134) may be lower than that of the first reflective surface (132).

FIG. 4 is a perspective view illustrating a light emitting diode package according to a second embodiment of the present invention, FIG. 5 is a plan view illustrating a light emitting diode package according to a second embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along the cutting line AA' of FIG. 2, and FIG. 7 is an exemplary view illustrating a light emitting diode package according to the second embodiment of the present invention including a sealing material.

Referring to FIGS. 4 and 5, a light emitting diode package (100) according to a second embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a zener diode (140). When describing the light emitting diode package according to the second embodiment of the present invention, the same description as in the first embodiment is omitted.

In this embodiment, a predetermined surface is formed on the top of the housing (130), and as illustrated in FIG. 5, a step (a1) may be formed between the first reflective surface (132) and the top surface (138) of the housing (130). That is, the top surface (138) of the housing (130) may be positioned somewhat higher than the first reflective surface (132).

In the present embodiment, the light emitting diode package (100) may further include a sealing material (150), as illustrated in FIG. 7. The sealing material (150) may be formed of resin or silicone, and may be formed to cover the first and second reflective surfaces (132, 134) together with the light emitting diode chip (110). At this time, the sealing material (150) may be a liquid sealing material (150) used during the manufacturing process, and may be formed by curing the liquid sealing material (150) while filling the inside of the housing (130). In this process, the liquid sealing material (150) may be prevented from overflowing to the outside of the housing (130) while covering the light emitting diode chip (110) and the first and second reflective surfaces (132, 134) by forming a step (a1) between the upper surface (138) of the housing (130) and the first reflective surface (132).

That is, as shown in FIG. 7, when the sealing material (150) is formed to cover the first reflective surface (132) while covering the light-emitting diode chip (110), as a step (a1) is formed between the first reflective surface (132) and the upper surface (138) of the housing (130), the sealing material (150) can be prevented from being formed to overflow to the outside beyond the upper surface (138) of the housing (130).

Referring again to FIG. 5, the upper surface (138) of the housing (130) will be described in more detail. The upper surface (138) of the housing (130) is formed to surround the outermost portion of the light-emitting diode package (100) in a plan view, and the inner line of the upper surface (138) determines the outer shape of the first reflective surface (132). Accordingly, as illustrated, the outer line of the upper surface (138) has a rectangular shape, and the inner line of the upper surface (138) has a shape in which the straight side and the curved corner side are extended from each other. That is, the inner line of the upper surface (138) may have a shape similar to an elliptical shape.

In this embodiment, the width of the top surface (138) of the housing (130) may vary depending on the location. In other words, the width (w1) of the top surface (138) on the side of the light-emitting diode package (100) and the width (w2) of the top surface (138) on the corner side may be different from each other, and the width (w2) of the top surface (138) on the corner side may be larger than the width (w1) of the top surface (138) on the side side. That is, at a location where the inner edge of the top surface (138) has a straight shape, the width (w1) of the top surface (138) has a constant width, and at a location where the inner edge has a curved shape, the width (w2) with respect to the outer edge of the top surface (138) may increase in width as it goes toward the corner side. At this time, the maximum width (w2) of the top surface (138) on the corner side of the housing (130) may be about 3 to 7 times greater than the side width (w1).

As the width of the upper surface (138) of the housing (130) is formed to become larger from the side toward the corner, even when an external force is applied to the light emitting diode package (100), such as when the light emitting diode packages (100) collide with each other during the process of manufacturing the light emitting diode package (100), the occurrence of defects, such as the housing (130) being broken, can be minimized.

Here, if the maximum width (w2) of the corner side of the upper surface (138) of the housing (130) is less than three times the side width (w1), there is a high risk that the housing (130) will be damaged by colliding with each other or other equipment when mass-producing or transporting the light-emitting diode package (100). In addition, if it is greater than seven times, the width (w2) of the corner side becomes too wide and the area of the reflective surface (132) is relatively reduced accordingly, which may lower the light-emitting efficiency of the light-emitting diode package (100).

In addition, in this embodiment, it is described that the light emitting diode package (100) has four sides. At this time, in this embodiment, the width of the reflective surface (132) extended from the upper surface (138) located at at least two of the four sides may be four to seven times the width of the corresponding upper surface (138). If the width of the reflective surface (132) is smaller than four times the width of the corresponding upper surface (138), the width of the upper surface (138) becomes relatively wider and the width of the reflective surface (132) becomes smaller, which may lower the reflection efficiency. In addition, if it becomes larger than seven times, the width of the reflective surface (132) becomes too large, making it difficult to sufficiently secure the width of the first region (h1), which is an region for mounting the light emitting diode chip (110), and thus the fairness for mounting the light emitting diode chip (110) and wire bonding may deteriorate.

Fig. 8 is a perspective view illustrating a light emitting diode package according to a third embodiment of the present invention, Fig. 9 is a plan view illustrating a light emitting diode package according to the third embodiment of the present invention, and Fig. 10 is a cross-sectional view taken along the cutting line AA' of Fig. 2.

Referring to FIGS. 8 and 9, a light emitting diode package (100) according to a third embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a zener diode (140). When describing the light emitting diode package according to the third embodiment of the present invention, the same description as in the first and second embodiments is omitted.

In this embodiment, a second region (h2) in which a second lead member (124) is exposed may be formed on the first reflective surface (132). The second region (h2) is formed such that a portion of the upper surface of the second lead member (124) is exposed, and a zener diode (140) may be mounted on the upper surface of the exposed second lead member (124). In addition, the second lead member (124) exposed in the second region (h2) may be electrically connected to the light-emitting diode chip (110) by wire bonding.

As described above, the housing (130) located between the first region (h1) and the second region (h2) can be defined as a partition wall (139). The partition wall (139) is arranged between the first and second lead members (122, 124) to electrically insulate the first lead member (122) and the second lead member (124), and has a shape that protrudes upward from the first and second lead members (122, 124), as illustrated in FIGS. 8 to 10. The upper surface of the partition wall (139) has a second reflective surface (134) inclined toward the first region (h1) and a first reflective surface (132) extended from the second reflective surface (134) at the uppermost end. In addition, the second inclined surface (139b) can be provided on the opposite side of the second reflective surface (134) with respect to the first reflective surface (132).

Here, the height of the partition wall (139) may be greater than the height of the Zener diode (140). Accordingly, light emitted from the light-emitting diode chip (110) may not be directly irradiated to the Zener diode (140) by the partition wall (139).

The second inclined surface (139b) is formed to be inclined toward the second lead member (124) exposed to the second area (h2) from the first reflective surface (132), and the second inclined surface (139b) and the second lead member (124) may or may not be in contact. That is, the second inclined surface (139b) may have an opposite incline to that of the second reflective surface (134).

As the second inclined surface (139b) is formed in this way, the upper space of the second region (h2) can be expanded, and accordingly, the degree of freedom when the second lead member (124) exposed by the light-emitting diode chip (110) and the second region (h2) are bonded by a wire can be increased.

Wire bonding is performed by lowering a wire from above at a location where the wire is to be bonded. In this process, the area of the second region (h2) may also affect the process, but due to the characteristics of the wire bonding process, the space above the second region (h2) may also have an effect. That is, as the second inclined surface (139b) is formed in the second region (h2), the device for wire bonding can freely move from the upper portion of the second region (h2) to the first region (h1).

In addition, as the second inclined surface (139b) is formed in the second region (h2), the length of the wires bonded to the first region (h1) and the second region (h2) can be shortened, as shown in FIG. 1, so that optical interference by the wires can be reduced.

And as shown in Fig. 10, the second inclined surface (139b) may have two inclined surfaces, but is not limited thereto, and may have one inclined surface or may have more inclined surfaces. In addition, the second inclined surface (139b) may not be formed as a straight line in the cross-section, but may be formed as a curve. That is, the second inclined surface (139b) may be formed as a curved surface.

A first inclined surface (139a) may be formed on the opposite surface where the second inclined surface (139b) is formed in the second region (h2). The first inclined surface (139a) is a surface that is inclined downward from the first reflective surface (132) located in the outer direction of the second region (h2) toward the second lead member (124). As the first inclined surface (139a) is formed in this way, light emitted from the light-emitting diode chip (110) may be reflected from the first inclined surface (139a) and reflected and emitted toward the upper portion of the light-emitting diode package (100). For this purpose, the first inclined surface (139a) may be formed as a reflective surface.

Furthermore, when light reflected from the first inclined surface (139a) is directed to the second inclined surface (139b), the second inclined surface (139b) may also be formed as a reflective surface so that it is reflected again from the second inclined surface (139b) and emitted to the upper portion of the light emitting diode package (100).

At this time, the first inclined surface (139a) and the second inclined surface (139b) may have relatively large inclination angles compared to the first reflective surface (132), respectively. In addition, if necessary, the first inclined surface and the second inclined surface may each include two or more inclinations. Since the first and second inclinations each include two or more inclinations, the light emitted from the light-emitting diode chip can be reflected more efficiently.

As described above, as the first inclined surface (139a) and the second inclined surface (139b) are formed, it may be advantageous to secure a space for mounting a Zener diode (140) in the second region (h2).

FIG. 11 is a cross-sectional view illustrating a light emitting diode package according to a fourth embodiment of the present invention.

Referring to FIG. 11, a light emitting diode package (100) according to a fourth embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a zener diode (140). When describing the light emitting diode package (100) according to the fourth embodiment of the present invention, the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall (139) has a shape that protrudes upward from the first and second lead members (122, 124). In addition, the upper surface (132a) of the partition wall (139) has a surface that is parallel to the upper surfaces (132a) of the first and second lead members (122, 124). One side of the upper surface (132a) of the partition wall (139) may have a second reflective surface (134) formed on it, as in the third embodiment, and the other side may have a second inclined surface (139b) formed on it.

FIG. 12 is a cross-sectional view illustrating a light emitting diode package according to a fifth embodiment of the present invention.

Referring to FIG. 12, a light emitting diode package (100) according to a fifth embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a zener diode (140). When describing the light emitting diode package (100) according to the fifth embodiment of the present invention, the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall (139) has a shape that protrudes upward from the first and second lead members (122, 124). In addition, the upper surface of the partition wall (139) has a second reflective surface (134) inclined toward the first region (h1) and a first reflective surface (132) extended from the second reflective surface (134) at the top. In addition, a vertical surface (139c) may be provided on the opposite side of the second reflective surface (134) with respect to the first reflective surface (132). In this case, the vertical surface (139c) is a surface formed in a vertical direction with respect to the second lead member (124).

In this embodiment, since the partition wall (139) has a vertical surface (139c), the area of the first reflective surface (132) located at the top can be increased, so that the area that can reflect light emitted from the light-emitting diode chip (110) increases, thereby increasing the light-emitting efficiency of the light-emitting diode package (100).

FIG. 13 is a cross-sectional view illustrating a light emitting diode package according to the sixth embodiment of the present invention.

Referring to FIG. 13, a light emitting diode package (100) according to a sixth embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a zener diode (140). When describing the light emitting diode package (100) according to the sixth embodiment of the present invention, the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall (139) has a shape that protrudes upward from the first and second lead members (122, 124). In addition, one side of the partition wall (139) may have a second reflective surface (134) inclined toward the first region (h1), and the other side may have a second inclined surface (139b) on the opposite side of the second reflective surface (134). The second inclined surface (139b) is inclined toward the second region (h2). Accordingly, the uppermost part of the partition wall (139) may have a sharp shape due to the second reflective surface (134) and the second inclined surface (139b).

Due to the shape of the partition wall (139), the angle of the second inclined surface (139b) can have a relatively gentler slope than in the third embodiment, and accordingly, the upper space of the second region (h2) can be increased, and thus the freedom of wire bonding for the second region (h2) can be increased. In addition, since the slope of the second inclined surface (139b) is gentle, the light reflected from the first inclined surface (139a) and the light re-reflected from the second inclined surface (139b) are relatively more likely to be emitted to the upper portion of the light emitting diode package (100), and thus the light emission efficiency of the light emitting diode package (100) can be increased.

FIG. 14 is a cross-sectional view illustrating a light emitting diode package according to the seventh embodiment of the present invention.

Referring to FIG. 14, a light emitting diode package (100) according to the seventh embodiment of the present invention includes a light emitting diode chip (110), a lead frame (120), a housing (130), and a zener diode (140). When describing the light emitting diode package (100) according to the seventh embodiment of the present invention, the same description as in the first to third embodiments will be omitted.

In this embodiment, the partition wall (139) has a shape that protrudes upward from the first and second lead members (122, 124). In addition, one side of the partition wall (139) may have a second reflective surface (134) inclined toward the first region (h1), and the other side may have a vertical surface (139c) on the opposite side of the second reflective surface (134). The vertical surface (139c) is a surface formed in a vertical direction to the second lead member (124). Accordingly, the uppermost part of the partition wall (139) may have a sharp shape due to the second reflective surface (134) and the vertical surface (139c).

In this embodiment, since the partition wall (139) has a second reflective surface (134) and a vertical surface (139c), the second reflective surface (134) formed on the partition wall (139) can have a gentler slope than the other second reflective surfaces (the second reflective surface (134) directly extended from the first reflective surface (132). Accordingly, the light emission efficiency, in which light emitted from the light-emitting diode chip (110) is reflected from the second reflective surface (134) and emitted to the upper portion of the light-emitting diode package (100), can be relatively increased.

As described above, the specific description of the present invention has been made by means of embodiments with reference to the attached drawings. However, the above-described embodiments have only been described as preferred examples of the present invention, and therefore, the present invention should not be understood as being limited to the above-described embodiments, and the scope of the rights of the present invention should be understood by the claims described below and their equivalent concepts.

100: Light-emitting diode package
110: LED chip 120: Lead frame
122: 1st lead member 124: 2nd lead member
130: Housing 132: First reflective surface
134: Second reflector 136: Home
138: Top surface 139: Bulkhead
139a: 1st slope 139b: 2nd slope
139c: vertical plane
140: Zener diode 150: Encapsulation material
h1, h2: first and second areas

Claims (23)

A lead frame comprising first and second lead members spaced apart from each other;
A housing including a first region supporting the lead frame and exposing a portion of an upper surface of at least one of the first and second lead members; and
A light emitting diode chip is mounted in the first area of the housing,
The housing includes a first reflective surface extending obliquely from the outside of the housing toward the first region, and a second reflective surface extending obliquely from the first reflective surface to the upper surface of one of the first and second lead members exposed to the first region.
The inclination angle of the second reflective surface is greater than the inclination angle of the first reflective surface,
The housing further includes a second region exposing a portion of the upper surface of the lead frame,
Including a zener diode mounted in the second region,
The above housing includes a bulkhead positioned between the first region and the second region,
The height of the above bulkhead is greater than the height of the above Zener diode,
The above-mentioned bulkhead has 'the second reflective surface inclined toward the first region', 'the first reflective surface extended from the second reflective surface', and 'the second inclined surface formed on the opposite side of the second reflective surface with respect to the first reflective surface'.
In the second region, a first inclined surface is formed opposite to the second inclined surface,
The above first inclined surface is a surface inclined toward the second region from the first reflective surface located on the outside of the housing,
The above light-emitting diode chip includes an n-type semiconductor layer; a p-type semiconductor layer; and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer.
A light emitting diode package wherein the height of the second reflective surface is lower than the height of the active layer. In claim 1,
A light emitting diode package wherein the second reflective surface has an inclination angle of 45 to 90 degrees. In claim 1,
A light emitting diode package wherein the second reflective surface includes a groove that additionally exposes the lead frame in the first area for wire bonding the light emitting diode chip. In claim 1,
A light emitting diode package wherein the area of the first region is 10% to 30% of the planar area of the light emitting diode package. delete delete delete delete In claim 1,
The above housing includes a top surface formed at the top,
A light emitting diode package in which a step is formed between the upper surface and the first reflective surface. In claim 9,
A light emitting diode package having an upper surface of the housing including an inner line including a first straight line and a curved line and an outer line including a second straight line. In claim 9,
The upper surface of the above housing is a light emitting diode package in which the width of the side side and the width of the corner side of the above housing are different from each other. In claim 11,
A light emitting diode package wherein the width of the corner side is 3 to 7 times the width of the side side. delete In claim 9,
A light emitting diode package further comprising a sealing material covering the first region, the first reflective surface, and the second reflective surface. In claim 9,
A light emitting diode package wherein the housing has two or more sides, and the width of the first reflective surface located on the two or more sides is four to seven times greater than the width of the upper surface adjacent to the first reflective surface. delete In claim 1,
The second region is a light emitting diode package surrounded by the first reflective surface. delete In claim 1,
A light emitting diode package wherein the second inclined surface has an opposite inclination direction to the first reflective surface. delete In claim 1,
A light emitting diode package wherein the first inclined surface has a greater inclination angle than the first reflective surface. delete In claim 1,
A light emitting diode package wherein the thickness of the above Zener diode is smaller than the height of the end of the second region of the first reflective surface surrounding the second region on the mounting surface of the Zener diode.

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