KR102673842B1 - Electromagnetic interference shielding tray for accommodating semiconductor device and method of manufacturing the same - Google Patents

Abstract

matrix polymer; About 0.1 wt% to about 5 wt% of a phenol-based or sulfur-based antioxidant; and about 0.1 wt% to about 5 wt% of a fluorine-based lubricant. A tray for storing semiconductors is provided. The tray for storing semiconductors of the present invention has the effect of reducing the generation of volatile organic compounds without discoloring the metal surface of the semiconductor package being stored.

Description

Electromagnetic interference shielding tray for accommodating semiconductor device and method of manufacturing the same}

The present invention relates to a semiconductor storage tray and a manufacturing method thereof, and more specifically, to a semiconductor storage tray and a manufacturing method thereof that do not discolor the metal surface of a semiconductor package and generate less volatile organic compounds.

In the manufacturing of semiconductor products, various entities cooperate, and it is necessary to transfer the products produced by one entity to other products. The delivered product may be a processed or processed wafer, a semiconductor chip made by dicing it, or even a semiconductor package encapsulated with molding resin.

Trays are used to store and transport these semiconductor devices, such as semiconductor chips or semiconductor packages. In some cases, even trays can be stored in test equipment or heat treatment equipment to perform testing or other processing on the semiconductor chips or semiconductor packages. You can. In the case of testing or processing where high temperatures are applied, the tray must have heat resistance, and in addition, thermal and chemical stability that does not affect the appearance of the product is required.

The first technical task to be achieved by the present invention is to provide a tray for storing semiconductors that does not discolor the metal surface of the semiconductor package and generates less volatile organic compounds.

The second technical problem to be achieved by the present invention is to provide a method of manufacturing a semiconductor storage tray without discoloring the metal surface of the semiconductor package and generating less volatile organic compounds.

In order to achieve the first technical problem, the present invention includes a matrix polymer; About 0.1 wt% to about 5 wt% of a phenol-based or sulfur-based antioxidant; and about 0.1 wt% to about 5 wt% of a fluorine-based lubricant.

In some embodiments, the phenolic antioxidant is 3,9-bis[2-(3-(3-t-butyl-4-hydroxy-5-methylphenyl)propionyloxy)-1,1-dimethyl Ethoxy]-2,4,8,10-tetraoxaspiro[5.5]undecane, pentaerythritylㅇtetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propio nate], 1,3,5,-trimethyl-2,4,6,-tris(3'5'-di-t-butyl-4-hydroxybenzyl)benzene, triethylene glycol-bis[3-(3 -t-butyl-5-methyl-4-hydroxyphenyl)propionate], 4,4'-thiobis(6-t-butyl-3-methylphenol), tris-(3,5-di-t -Butyl-4-hydroxybenzyl)-isocyanurate, 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-isocyanurate, 1,3 ,5-tris(2,6-dimethyl-3-hydroxy-4-tert-butylbenzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxy Benzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)-2,4,6-trimethylbenzene, 1,3,5-tris[( 3,5-di-tert-butyl-4-hydroxyphenyl)propionyloxyethyl]isocyanurate, 1,6-hexanediol-bis[3-(3,5-di-t-butyl-4- Hydroxyphenyl)propionate], 2,2-thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], N,N'-hexamethylene Bis(3,5-di-t-butyl-4-hydroxy-hydrocinnamamide), 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4- Hydroxybenzyl)benzene, 2,4-bis[(octylthio)methyl]-O-cresol, 1,6-hexanediol-bis-[3-(3,5-di-t-butyl-4-hydroxy phenyl)propionate], octadecyl-[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2,2'-methylenebis(4-methyl-6-t- butylphenol), 2,2'-methylenebis(4-ethyl-6-tert-butylphenol), 4,4'-butylidene-bis(3-methyl-6-t-butylphenol), 1,1 , 3-tris (2-methyl-4-hydroxy-5-t-butylphenyl) butane, 1,3,5-tris (4-hydroxybenzyl) benzene, tetrakis [methylene-3- (3,5 '-di-t-butyl-4'-hydroxyphenylpropionate)] methane, 2,6-di-tert-butyl-4-ethylphenol, 2-tert-butyl-4,6-dimethylphenol, styrene phenol, 2,2'-thiobis-(6-tert-butyl-4-methylphenol), 2,6-di-tert-butyl-4-(4,6-bis(octylthio)-1,3 ,5-triazin-2-ylamino)phenol, 2-methyl-4,6-bis(octylsulfanylmethyl)phenol, 2,2'-isobutylidenebis(4,6-dimethylphenol), isooctyl -3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, N,N'-hexane-1,6-diylbis[3-(3,5-di-tert-butyl) -4-hydroxyphenyl)propionamide, 2-[1-(2-hydroxy-3,5-di-tert-pentylphenyl)ethyl]-4,6-di-tert-pentylphenylacrylate, 6- [3-(3-tert-butyl-4-hydroxy-5-methyl)propoxy]-2,4,8,10-tetra-tert-butylbenz[d,f][1,3,2]- Dioxaphosphovine, hexamethylenebis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, 2,2'-oxamide-bis[ethyl-3-(3,5 -di-tert-butyl-4-hydroxyphenyl)propionate], 2-ethylhexyl-3-(3',5'-di-tert-butyl-4'-hydroxyphenyl)propionate, 2 ,2'-ethylenebis(4,6-di-tert-butylphenol), 2-tert-butyl-6-(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenylacrylate , and bis[monoethyl(3,5-di-tert-butyl-4-hydroxybenzyl)phosphonate]calcium salt.

In some embodiments, the sulfur-based antioxidant is tetrakis[methylene-3-(laurylthio)propionate]methane, bis(methyl-4-[3-n-alkyl(C12/C14)thiopropionyl Oxy]-5-tert-butylphenyl) sulfide, ditridecyl-3,3'-thiodipropionate, dilauryl thiodipropionate, dimyristyl-3,3'-thiodipropionate, Distearyl thiodipropionate, lauryl/stearylthiodipropionate, 4,4'-thiobis(6-tert-butyl-m-cresol), and 2,2'-thiobis(6- It may be one or more selected from the group consisting of tert-butyl-p-cresol) and distearyl-sulfide.

In some embodiments, the fluorine-based lubricant is polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-perfluoroalkyl vinyl ether-vinyl Ridenefluoride copolymer, tetrafluoroethylene-perfluoroalkyl ether-hexafluoropropylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer (FEP), tetrafluoroethylene-ethylene copolymer (ETFE) ), polychlorotrifluoroethylene (PCTFE), chlorotrifluoroethylene-ethylene copolymer (ECTFE), polyvinylidene fluoride (PVdF), polyvinylfluoride (PVF), tetrafluoroethylene-hexafluoro Propylene copolymer, vinylidene fluoride-hexafluoropropylene copolymer (VDF-HFP copolymer), vinylidene fluoride-chlorotrifluoroethylene copolymer, vinylidene fluoride-hexafluoropropylene-tetrafluoroethylene It may be one or more types selected from the group consisting of (VDF-HFP-TFE) copolymer, chlorotrifluoroethylene-ethylene (ECTFE) copolymer, and fluorinated ethylene-propylene copolymer.

In some embodiments, the content of the antioxidant may be about 0.1 wt% to about 1 wt%.

In some embodiments, the matrix polymer is modified polyphenylene oxide (MPPO), polysulfone (PSU), modified polysulfone (MPSU), polyamide, or polyether. Sulfone (PES), polycarbonate (PC), polyetherimide (PEI), polyphenylene sulfide (PPS), liquid crystal polymer, polyetheretherketone, It may be one or more types selected from the group consisting of PEEK) and mixtures thereof.

In some embodiments, the content of the fluorine-based lubricant may be about 0.1 wt% to about 1 wt%. In some embodiments, the semiconductor storage tray may further include about 0.1 wt% to about 2 wt% of a carbon-based conductive material.

In order to achieve the second technical problem, the present invention includes preparing a polymer mixture by compounding a matrix polymer, an antioxidant, and a fluorine-based lubricant at a temperature of about 250°C to about 350°C; Injecting the polymer mixture into a tray for storing semiconductors; and curing the injection-molded product in the form of a semiconductor storage tray.

The tray for storing semiconductors of the present invention has the effect of reducing the generation of volatile organic compounds without discoloring the metal surface of the semiconductor package being stored.

Figure 1 is a perspective view showing a semiconductor storage tray 10 and its cover 20 according to an embodiment of the present invention.
FIG. 2 is a partial enlarged view of the portion indicated by II in FIG. 1.
Figure 3 is a flowchart showing a method of manufacturing a semiconductor storage tray according to an embodiment of the present invention.
Figure 4 is an image showing an example of discoloration after baking at 200°C for 2 hours in the semiconductor storage tray of Comparative Example 2.
Figure 5 is an image showing an example of discoloration after baking at 200°C for 4 hours in the semiconductor storage tray of Comparative Example 1.
Figures 6a and 6b are partial enlarged images of the analysis spectrum and analysis surface showing the carbon content analysis results.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the present invention concept may be modified into various other forms, and the scope of the present invention concept should not be construed as being limited to the embodiments described in detail below. It is preferable that the embodiments of the present invention be interpreted as being provided in order to more completely explain the present invention to a person with average knowledge in the art. Identical symbols refer to identical elements throughout. Furthermore, various elements and areas in the drawings are schematically drawn. Accordingly, the inventive concept is not limited by the relative sizes or spacing depicted in the accompanying drawings.

Terms such as first, second, etc. may be used to describe various components, but the components are not limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. For example, a first component may be named a second component, and conversely, a second component may be named a first component without departing from the scope of the present invention concept.

The terms used in this application are only used to describe specific embodiments and are not intended to limit the inventive concept. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, expressions such as “comprises” or “has” are intended to indicate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, but are not intended to indicate the presence of one or more other features or It should be understood that this does not preclude the presence or addition of numbers, operations, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical terms and scientific terms, have the same meaning as commonly understood by those skilled in the art in the technical field to which the concept of the present invention pertains. Additionally, commonly used terms, as defined in dictionaries, should be interpreted to have meanings consistent with what they mean in the context of the relevant technology, and should not be used in an overly formal sense unless explicitly defined herein. It will be understood that this is not to be interpreted.

In cases where an embodiment can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially at the same time, or may be performed in an order opposite to the order in which they are described.

In the accompanying drawings, variations of the depicted shape may be expected, for example, depending on manufacturing techniques and/or tolerances. Accordingly, embodiments of the present invention should not be construed as limited to the specific shape of the area shown in this specification, but should include, for example, changes in shape that occur during the manufacturing process. As used herein, any term “and/or” includes each and every combination of one or more of the mentioned elements.

FIG. 1 is a perspective view showing a semiconductor storage tray 10 and its cover 20 according to an embodiment of the present invention, and FIG. 2 is a partial enlarged view of the portion indicated by II in FIG. 1.

1 and 2, the semiconductor storage tray 10 may include a plurality of pocket portions 13 on the base plate 11 that can accommodate semiconductor devices such as semiconductor chips or semiconductor packages. there is. On the base plate 11, the pocket portions 13 may be arranged in a grid shape. In Figure 1, the pocket portions 13 are shown to be arranged 16 times in the x direction and 6 times in the y direction, but the present invention is not limited thereto.

The semiconductor storage tray 10 may be made of a heat-resistant polymer material as a matrix polymer and an antioxidant and a lubricant added thereto. Here, 'heat resistance' is defined to mean the property of being able to withstand high temperatures of 130℃ or higher.

The heat-resistant polymer material of the semiconductor storage tray 10 is, for example, modified polyphenylene oxide (MPPO), modified polysulfone (MPSU), polycarbonate (PC), poly Amide (polyamide), polysulfone (PSU), polyethersulfone (PES), polyetherimide (PEI), polyphenylene sulfide, liquid crystal polymer, polyether It may be one or more selected from the group consisting of etherketone (polyetheretherketone, PEEK) and mixtures thereof, but the present invention is not limited thereto. In some embodiments, the heat-resistant polymer material may be MPPO or PES.

The pocket portion 13 may have a size and shape corresponding to the semiconductor device to be accommodated. In Figure 1, the pocket portion 13 is shown as having a rectangular shape, but the present invention is not limited thereto. The pocket portion 13 may have various shapes such as hexagonal, circular, and oval.

A guide portion 15 protruding in the vertical direction may be provided at the edge of the pocket portion 13. The guide portion 15 may serve to guide the semiconductor device 3 when the semiconductor device 3 is stored in the pocket portion 13. In particular, among the side surfaces of the guide part 15, the side facing the pocket part 13 may be inclined. Since the side of the guide portion 15 facing the pocket portion 13 is inclined, the semiconductor device 3 stored in the pocket portion 13 is kept in the pocket portion 13 even if the alignment of the semiconductor device 3 stored in the pocket portion 13 is not perfect. It can be guided smoothly within. The slope of the side of the guide portion 15 may be appropriately selected in consideration of the size and alignment precision of the semiconductor device 3 to be accommodated.

The guide portion 15 may be formed on all four sides of the pocket portion 13, or may be formed on only two opposing sides. Additionally, one guide portion 15 may be formed on one side of the pocket portion 13, or two or more guide portions may be formed. In FIG. 2, it is shown that one guide part 15 is formed on the side along the y direction and two guide parts 15 are formed on the side along the x direction, but the present invention is not limited thereto.

antioxidant

In some embodiments, the semiconductor storage tray 10 may include about 0.1 wt% to about 5 wt% of an antioxidant. In some embodiments, the semiconductor storage tray 10 contains an antioxidant of about 0.1 wt% to about 5 wt%, about 0.15 wt% to about 4.5 wt%, about 0.2 wt% to about 4 wt%, about 0.25 wt% to about 3.5 wt%, about 0.3 wt% to about 3 wt%, about 0.35 wt% to about 2.5 wt%, about 0.4 wt% to about 2 wt%, about 0.45 wt% to about 1.5 wt%, about It may range from 0.5 wt% to about 1 wt%, or any range between these values.

If the semiconductor storage tray 10 contains too little of the antioxidant, the advantageous effect of including the antioxidant, that is, the effect of preventing discoloration of the semiconductor package stored in the semiconductor storage tray, may be insufficient. there is. If the semiconductor storage tray 10 contains too much of the antioxidant, the compatibility between the matrix polymer and the antioxidant may decrease, and the physical properties of the heat-resistant polymer may deteriorate.

The antioxidant may be a phenolic antioxidant or a sulfur-based antioxidant.

In some embodiments, the phenolic antioxidant is 3,9-bis[2-(3-(3-t-butyl-4-hydroxy-5-methylphenyl)propionyloxy)-1,1-dimethyl Ethoxy]-2,4,8,10-tetraoxaspiro[5.5]undecane, pentaerythritylㅇtetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propio nate], 1,3,5,-trimethyl-2,4,6,-tris(3'5'-di-t-butyl-4-hydroxybenzyl)benzene, triethylene glycol-bis[3-(3 -t-butyl-5-methyl-4-hydroxyphenyl)propionate], 4,4'-thiobis(6-t-butyl-3-methylphenol), tris-(3,5-di-t -Butyl-4-hydroxybenzyl)-isocyanurate, 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-isocyanurate, 1,3 ,5-tris(2,6-dimethyl-3-hydroxy-4-tert-butylbenzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxy Benzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)-2,4,6-trimethylbenzene, 1,3,5-tris[( 3,5-di-tert-butyl-4-hydroxyphenyl)propionyloxyethyl]isocyanurate, 1,6-hexanediol-bis[3-(3,5-di-t-butyl-4- Hydroxyphenyl)propionate], 2,2-thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], N,N'-hexamethylene Bis(3,5-di-t-butyl-4-hydroxy-hydrocinnamamide), 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4- Hydroxybenzyl)benzene, 2,4-bis[(octylthio)methyl]-O-cresol, 1,6-hexanediol-bis-[3-(3,5-di-t-butyl-4-hydroxy phenyl)propionate], octadecyl-[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2,2'-methylenebis(4-methyl-6-t- butylphenol), 2,2'-methylenebis(4-ethyl-6-tert-butylphenol), 4,4'-butylidene-bis(3-methyl-6-t-butylphenol), 1,1 , 3-tris (2-methyl-4-hydroxy-5-t-butylphenyl) butane, 1,3,5-tris (4-hydroxybenzyl) benzene, tetrakis [methylene-3- (3,5 '-di-t-butyl-4'-hydroxyphenylpropionate)] methane, 2,6-di-tert-butyl-4-ethylphenol, 2-tert-butyl-4,6-dimethylphenol, styrene phenol, 2,2'-thiobis-(6-tert-butyl-4-methylphenol), 2,6-di-tert-butyl-4-(4,6-bis(octylthio)-1,3 ,5-triazin-2-ylamino)phenol, 2-methyl-4,6-bis(octylsulfanylmethyl)phenol, 2,2'-isobutylidenebis(4,6-dimethylphenol), isooctyl -3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, N,N'-hexane-1,6-diylbis[3-(3,5-di-tert-butyl) -4-hydroxyphenyl)propionamide, 2-[1-(2-hydroxy-3,5-di-tert-pentylphenyl)ethyl]-4,6-di-tert-pentylphenylacrylate, 6- [3-(3-tert-butyl-4-hydroxy-5-methyl)propoxy]-2,4,8,10-tetra-tert-butylbenz[d,f][1,3,2]- Dioxaphosphovine, hexamethylenebis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, 2,2'-oxamide-bis[ethyl-3-(3,5 -di-tert-butyl-4-hydroxyphenyl)propionate], 2-ethylhexyl-3-(3',5'-di-tert-butyl-4'-hydroxyphenyl)propionate, 2 ,2'-ethylenebis(4,6-di-tert-butylphenol), 2-tert-butyl-6-(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenylacrylate , and bis[monoethyl(3,5-di-tert-butyl-4-hydroxybenzyl)phosphonate]calcium salt. However, the present invention is not limited to these.

In some embodiments, the sulfur-based antioxidant is tetrakis[methylene-3-(laurylthio)propionate]methane, bis(methyl-4-[3-n-alkyl(C12/C14)thiopropionyl Oxy]-5-tert-butylphenyl) sulfide, ditridecyl-3,3'-thiodipropionate, dilauryl thiodipropionate, dimyristyl-3,3'-thiodipropionate, Distearyl thiodipropionate, lauryl/stearylthiodipropionate, 4,4'-thiobis(6-tert-butyl-m-cresol), and 2,2'-thiobis(6- It may be one or more selected from the group consisting of tert-butyl-p-cresol) and distearyl-sulfide. However, the present invention is not limited to these.

The phenol-based antioxidant and the sulfur-based antioxidant may be used separately, or may be mixed and used together.

Fluorine-based lubricant

In some embodiments, the semiconductor storage tray 10 may include about 0.1 wt% to about 5 wt% of a fluorine-based lubricant. The semiconductor storage tray 10 contains about 0.1 wt% to about 5 wt%, about 0.15 wt% to about 4.5 wt%, about 0.2 wt% to about 4 wt%, and about 0.25 wt% to about 3.5 wt% of the fluorine-based lubricant. wt%, about 0.3 wt% to about 3 wt%, about 0.35 wt% to about 2.5 wt%, about 0.4 wt% to about 2 wt%, about 0.45 wt% to about 1.5 wt%, about 0.5 wt% to about 1 wt% wt%, or any range between these values.

If the semiconductor storage tray 10 contains too little of the fluorine-based lubricant, processability decreases when manufacturing the semiconductor storage tray 10, and the temperature and pressure required for processing during manufacturing increase, resulting in outgassing ( outgassing may increase. If the semiconductor storage tray 10 contains too much of the fluorine-based lubricant, the dispersibility of the filler may decrease or metering may not be performed consistently during the injection process, resulting in short molds during product molding.

In some embodiments, the fluorine-based lubricant is polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-perfluoroalkyl vinyl ether-vinyl Ridenefluoride copolymer, tetrafluoroethylene-perfluoroalkyl ether-hexafluoropropylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer (FEP), tetrafluoroethylene-ethylene copolymer (ETFE) ), polychlorotrifluoroethylene (PCTFE), chlorotrifluoroethylene-ethylene copolymer (ECTFE), polyvinylidene fluoride (PVdF), polyvinylfluoride (PVF), tetrafluoroethylene-hexafluoro Propylene copolymer, vinylidene fluoride-hexafluoropropylene copolymer (VDF-HFP copolymer), vinylidene fluoride-chlorotrifluoroethylene copolymer, vinylidene fluoride-hexafluoropropylene-tetrafluoroethylene It may be one or more types selected from the group consisting of (VDF-HFP-TFE) copolymer, chlorotrifluoroethylene-ethylene (ECTFE) copolymer, and fluorinated ethylene-propylene copolymer. However, the present invention is not limited to these.

If the semiconductor storage tray 10 contains the phenol-based or sulfur-based antioxidant and the fluorine-based lubricant, the color of the metal surface will be discolored when a semiconductor package having a metal surface is stored in the semiconductor storage tray 10. A significant decrease was found. It is understood that discoloration of the metal surface is due to moisture or hydrocarbons forming the heat-resistant polymer, or due to specific elements (e.g., sulfur) contained in the heat-resistant polymer, but the present invention is not limited thereto.

However, by adding an antioxidant, especially a phenol-based or sulfur-based antioxidant, together with a fluorine-based lubricant as a component of the semiconductor storage tray 10, it is possible to prevent the metal surface of the semiconductor package from being discolored due to carbon, moisture, or sulfur. It was discovered.

Carbon-based conductive material

In some embodiments, the semiconductor storage tray 10 may further include a carbon-based conductive material. For example, the semiconductor storage tray 10 may include about 3.5 wt% to about 20 wt% of carbon-based conductive material. In some embodiments, the semiconductor storage tray 10 contains about 3.5 wt% to about 20 wt%, about 4 wt% to about 19 wt%, or about 4.5 wt% to about 18 wt of the carbon-based conductive material. %, from about 5 wt% to about 17 wt%, from about 5.5 wt% to about 16 wt%, from about 6 wt% to about 15 wt%, or any range between these values.

If the content of the carbon-based conductive material is too low, static electricity generated in the semiconductor storage tray 10 may be insufficiently removed, resulting in electrical damage to the semiconductor package stored therein. If the content of the carbon-based conductive material is too high, the carbon-based conductive material may separate from the semiconductor storage tray 10 and cause discoloration of the metal surface of the semiconductor package.

In some embodiments, the carbon-based conductive material may be a conductive polymer, for example, polyaniline (PANI), polypyrrole (PPY), polycarbazole, polyindole, Polyazepine, polynaphthalene, polythiophene (PT), poly(3,4-ethylenedioxythiophene), PEDOT, poly(p-phenyl) poly(p-phenylene sulfide), PPS), poly(p-phenylene vinylene), PPV, polyacetylene (PAC), polypyrene, A group consisting of polyphenylene, polyfluorene, polyazulene, polyfuran, polythiophene vinylene, polypyridine, and derivatives thereof There may be one or more types selected from, but the present invention is not limited thereto.

In some embodiments, the carbon-based conductive material includes carbon fiber, carbon black, or carbon-based nanomaterials such as carbon nanotubes, carbon nanowires, carbon nanorods, graphene, fullerene, etc. can do.

filler

In some embodiments, the semiconductor storage tray 10 may further include filler. For example, the semiconductor storage tray 10 may include about 3.5 wt% to about 15 wt% of filler. In some embodiments, the semiconductor storage tray 10 contains the filler in an amount of about 3.5 wt% to about 15 wt%, about 4 wt% to about 14 wt%, about 4.5 wt% to about 13 wt%, about 5 wt% to about 12 wt%, about 5.5 wt% to about 11 wt%, about 6 wt% to about 10 wt%, or any range between these values.

If the content of the filler is too high, mechanical properties may deteriorate and flowability may deteriorate. Conversely, if the content of the filler is too low, the mechanical and thermal properties that can be obtained by including the filler may not be developed or may be insufficient.

The filler may be, for example, an inorganic filler such as wallestonite, but the present invention is not limited thereto.

glass fiber

In some embodiments, the semiconductor storage tray 10 may further include glass fiber. For example, the semiconductor storage tray 10 may include about 7 wt% to about 18 wt% of glass fiber. In some embodiments, the semiconductor storage tray 10 contains about 7 wt% to about 18 wt%, about 8 wt% to about 17 wt%, about 9 wt% to about 16 wt%, About 10 wt% to about 15 wt%, about 11 wt% to about 14 wt%, about 12 wt% to about 13 wt%, or any range between these values.

If the content of the glass fiber is too high, extrusion and injection defects may occur and flowability may deteriorate. Conversely, if the content of the glass fiber is too low, the mechanical and thermal properties that can be obtained by including the glass fiber may not be developed or may be insufficient.

Figure 3 is a flowchart showing a method of manufacturing a semiconductor storage tray according to an embodiment of the present invention.

Referring to Figure 3, first, a polymer mixture is prepared through compounding (S110).

The polymer mixture may include a matrix polymer, an antioxidant, and a fluorine-based lubricant. Since the types and contents of the matrix polymer, antioxidant, and fluorine-based lubricant have been described in detail above, further description will be omitted here.

In some embodiments, the compounding may be performed at a temperature of about 250°C to about 350°C through an extruder. For example, the temperature of the hopper may be maintained at about 250°C to about 300°C, the temperature of the cylinder may be maintained at about 270°C to about 320°C, and the temperature of the die may be maintained at about 290°C to about 350°C.

Thereafter, the polymer mixture may be dried at a temperature of about 60°C to about 90°C for 2 to 6 hours to remove unnecessary moisture.

Subsequently, the polymer mixture can be molded into a tray for storing semiconductors through injection molding (S120).

The feeder and nozzle of the injection molding may be maintained at about 250°C to about 350°C, and the mold may be maintained at about 50°C to about 90°C.

Then, the injected product can be hardened by cooling it for a sufficient period of time, for example, about 5 seconds to about 30 seconds (S130).

Hereinafter, the configuration and effects of the present invention will be described in more detail through specific examples and comparative examples, but these examples are only intended to provide a clearer understanding of the present invention and are not intended to limit the scope of the present invention.

<Example 1>

80 wt% of PES as a matrix polymer, 8 wt% of carbon fiber, 8 wt% of wallestonite as an inorganic filler, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl) After preparing a polymer mixture containing 3.5 wt% of -4-hydroxybenzyl)benzene and 0.5 wt% of PTFE, a tray for storing semiconductors was manufactured through an injection process.

<Example 2>

As a matrix polymer, 70.5 wt% of MPPO, 8 wt% of carbon fiber, 8 wt% of wallestonite as an inorganic filler, 12 wt% of glass fiber, tetrakis[methylene-3-(3,5'-di-t-butyl- 4'-Hydroxyphenylpropionate)] After preparing a polymer mixture containing 0.8 wt% of methane and 0.7 wt% of PTFE, a tray for storing semiconductors was manufactured through an injection process.

<Example 3>

After preparing a polymer mixture containing 80 wt% of PES as a matrix polymer, 8 wt% of carbon fiber, 8 wt% of wallestonite as an inorganic filler, 3.5 wt% of dilauryl thiodipropionate, and 0.5 wt% of PTFE, A tray for storing semiconductors was manufactured through an injection process.

<Example 4>

70.5 wt% MPPO as a matrix polymer, 8 wt% carbon fiber, 8 wt% wallestonite as an inorganic filler, 12 wt% glass fiber, 2,6-di-tert-butyl-4-(4,6-bis( After preparing a polymer mixture containing 0.8 wt% of octylthio)-1,3,5-triazin-2-ylamino)phenol and 0.7 wt% of tetrafluoroethylene-ethylene copolymer (ETFE), an injection process was performed. A tray for storing semiconductors was manufactured.

<Example 5>

80 wt% of PES as a matrix polymer, 8 wt% of carbon fiber, 8 wt% of wallestonite as an inorganic filler, and 3.5 wt% of tris-(3,5-di-t-butyl-4-hydroxybenzyl)-isocyanurate. wt%, and 0.5 wt% of fluorinated ethylene-propylene copolymer was prepared, and then a tray for storing semiconductors was manufactured through an injection process.

<Example 6>

80 wt% of PES as a matrix polymer, 8 wt% of carbon fiber, 8 wt% of wallestonite as an inorganic filler, octadecyl-[3-(3,5-di-t-butyl-4-hydroxyphenyl)propio After preparing a polymer mixture containing 3.5 wt% of Nate and 0.5 wt% of PVdF, a tray for storing semiconductors was manufactured through an injection process.

<Comparative Example 1>

After preparing a polymer mixture containing 84 wt% of PES as a matrix polymer, 8 wt% of carbon fiber, and 8 wt% of wallestonite as an inorganic filler, a tray for storing semiconductors was manufactured through an injection process.

<Comparative Example 2>

After preparing a polymer mixture containing 72 wt% of MPPO as a matrix polymer, 8 wt% of carbon fiber, 8 wt% of wallestonite as an inorganic filler, and 12 wt% of glass fiber, a tray for storing semiconductors was manufactured through an injection process. .

discoloration test

260 samples were loaded on each of the semiconductor storage trays of Examples 1 to 6, Comparative Example 1, and Comparative Example 2, and baking was performed according to the baking conditions summarized in Table 1. As a result, there was no discoloration on the surfaces of the samples loaded on the semiconductor storage trays of Examples 1 to 6. In contrast, color changes were observed on the surfaces of 2 (0.77%) to 9 (3.46%) of the samples loaded on the semiconductor storage trays of Comparative Examples 1 and 2.

<Table 1>

Figure 4 is an image showing an example of discoloration after baking at 200°C for 2 hours in the semiconductor storage tray of Comparative Example 2. Referring to Figure 4, it is observed that the metal surface has discolored black at the corner indicated by the dotted line. This is discoloration caused by carbon, and is presumed to be caused by carbon derived from the semiconductor storage tray.

Figure 5 is an image showing an example of discoloration after baking at 200°C for 4 hours in the semiconductor storage tray of Comparative Example 1. Referring to Figure 5, it is observed that the metal surface is discolored to green in the central portion indicated by the dotted line. This is discoloration caused by sulfur, and the sulfur component that caused the discoloration is presumed to have originated from the sulfur-containing matrix polymer contained in the tray for storing semiconductors.

carbon content test

After baking at 200°C for 2 hours in the semiconductor storage tray of Example 2 and Comparative Example 2, the carbon content was measured using SEM/EDS (scanning electron microscopy with energy dispersive spectroscopy) on the surfaces of the undiscolored and discolored samples. was measured.

As a result, the carbon content on the surface of the undiscolored sample was 6.37 wt%, but on the surface of the discolored sample, the carbon content was found to be 36.04 wt%.

Figures 6a and 6b are partial enlarged images (x5000) of the analysis spectrum and analysis surface showing the analysis results. As shown in Figures 6a and 6b, it is observed that the carbon peak in the discolored sample (Figure 6b) is significantly larger than that in the undiscolored sample (Figure 6a), and black deposition of carbon is also observed in the surface image. It has been done.

VOC testing

For the semiconductor storage trays of Example 1, Example 2, Comparative Example 1, and Comparative Example 2, the total volatile organic compound (TVOC) generation amount was measured using the US EPA 5021A/8260C analysis method, and the results were measured. It is summarized in Table 2.

<Table 2>

As shown in Table 2, it was confirmed that TVOC did not occur in the semiconductor storage trays of Examples 1 and 2. On the other hand, it was confirmed that TVOC of 17 mg/kg and 31 mg/kg was generated in the semiconductor storage trays of Comparative Example 1 and Comparative Example 2, respectively. The unit of generation amount is expressed in mg as the mass of TVOC generated per 1 kg of mass of the semiconductor storage tray.

As discussed above, the embodiments of the present invention have been described in detail, but those skilled in the art will understand that without departing from the spirit and scope of the present invention as defined in the appended claims, The present invention may be implemented with various modifications. Therefore, changes in future embodiments of the present invention will not depart from the scope of the present invention.

Claims (10)

matrix polymer;
0.1 wt% to 5 wt% of phenol-based or sulfur-based antioxidant; and
0.1 wt% to 1 wt% of fluorine-based lubricant;
A semiconductor storage tray including a. According to claim 1,
The phenolic antioxidant is 3,9-bis[2-(3-(3-t-butyl-4-hydroxy-5-methylphenyl)propionyloxy)-1,1-dimethylethoxy]-2,4 , 8,10-tetraoxaspiro[5.5]undecane, pentaerythritylㅇtetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], 1,3, 5,-trimethyl-2,4,6,-tris(3'5'-di-t-butyl-4-hydroxybenzyl)benzene, triethylene glycol-bis[3-(3-t-butyl-5- methyl-4-hydroxyphenyl)propionate], 4,4'-thiobis(6-t-butyl-3-methylphenol), tris-(3,5-di-t-butyl-4-hydroxy Benzyl)-isocyanurate, 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-isocyanurate, 1,3,5-tris(2, 6-dimethyl-3-hydroxy-4-tert-butylbenzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanurate, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)-2,4,6-trimethylbenzene, 1,3,5-tris[(3,5-di-tert -Butyl-4-hydroxyphenyl)propionyloxyethyl]isocyanurate, 1,6-hexanediol-bis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate ], 2,2-thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], N,N'-hexamethylenebis(3,5-di -t-butyl-4-hydroxy-hydrocinnamamide), 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, 2 ,4-bis[(octylthio)methyl]-O-cresol, 1,6-hexanediol-bis-[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], Octadecyl-[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2,2'-methylenebis(4-methyl-6-t-butylphenol), 2,2 '-methylenebis(4-ethyl-6-tert-butylphenol), 4,4'-butylidene-bis(3-methyl-6-t-butylphenol), 1,1,3-tris(2- Methyl-4-hydroxy-5-t-butylphenyl)butane, 1,3,5-tris(4-hydroxybenzyl)benzene, tetrakis[methylene-3-(3,5'-di-t-butyl) -4'-hydroxyphenylpropionate)] methane, 2,6-di-tert-butyl-4-ethylphenol, 2-tert-butyl-4,6-dimethylphenol, styrenated phenol, 2,2' -thiobis-(6-tert-butyl-4-methylphenol), 2,6-di-tert-butyl-4-(4,6-bis(octylthio)-1,3,5-triazine-2 -ylamino)phenol, 2-methyl-4,6-bis(octylsulfanylmethyl)phenol, 2,2'-isobutylidenebis(4,6-dimethylphenol), isooctyl-3-(3,5 -di-tert-butyl-4-hydroxyphenyl) propionate, N,N'-hexane-1,6-diylbis[3-(3,5-di-tert-butyl-4-hydroxyphenyl) Propionamide, 2-[1-(2-hydroxy-3,5-di-tert-pentylphenyl)ethyl]-4,6-di-tert-pentylphenylacrylate, 6-[3-(3-tert -Butyl-4-hydroxy-5-methyl)propoxy]-2,4,8,10-tetra-tert-butylbenz[d,f][1,3,2]-dioxaphosphovine, hexamethylene Bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, 2,2'-oxamide-bis[ethyl-3-(3,5-di-tert-butyl- 4-hydroxyphenyl)propionate], 2-ethylhexyl-3-(3',5'-di-tert-butyl-4'-hydroxyphenyl)propionate, 2,2'-ethylenebis( 4,6-di-tert-butylphenol), 2-tert-butyl-6-(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenylacrylate, and bis[monoethyl( A tray for storing a semiconductor, characterized in that it is at least one selected from the group consisting of [3,5-di-tert-butyl-4-hydroxybenzyl)phosphonate]calcium salt. According to claim 1,
The sulfur-based antioxidants include tetrakis[methylene-3-(laurylthio)propionate]methane, bis(methyl-4-[3-n-alkyl(C12/C14)thiopropionyloxy]-5-tert- Butylphenyl) sulfide, ditridecyl-3,3'-thiodipropionate, dilauryl thiodipropionate, dimyristyl-3,3'-thiodipropionate, distearyl thiodipropionate nate, lauryl/stearylthiodipropionate, 4,4'-thiobis(6-tert-butyl-m-cresol), and 2,2'-thiobis(6-tert-butyl-p-cresol) ), a semiconductor storage tray, characterized in that it is one or more selected from the group consisting of distearyl-sulfide. According to claim 1,
The fluorine-based lubricant is polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-perfluoroalkyl ether-vinylidene fluoride copolymer, tetrafluoroethylene Fluoroethylene-perfluoroalkyl vinyl ether-hexafluoropropylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer (FEP), tetrafluoroethylene-ethylene copolymer (ETFE), polychlorotrifluoro Ethylene (PCTFE), chlorotrifluoroethylene-ethylene copolymer (ECTFE), polyvinylidene fluoride (PVdF), polyvinyl fluoride (PVF), tetrafluoroethylene-hexafluoropropylene copolymer, vinylidene fluoride Lyde-hexafluoropropylene copolymer (VDF-HFP copolymer), vinylidene fluoride-chlorotrifluoroethylene copolymer, vinylidene fluoride-hexafluoropropylene-tetrafluoroethylene (VDF-HFP-TFE) A semiconductor storage tray comprising at least one selected from the group consisting of copolymers, chlorotrifluoroethylene-ethylene (ECTFE) copolymers, and fluorinated ethylene-propylene copolymers. According to claim 1,
A tray for storing semiconductors, characterized in that the content of the antioxidant is 0.1 wt% to 1 wt%. According to claim 1,
The matrix polymer is modified polyphenylene oxide (MPPO), polysulfone (PSU), modified polysulfone (MPSU), polyamide, polyethersulfone (PES), Polycarbonate (PC), polyetherimide (PEI), polyphenylene sulfide (PPS), liquid crystal polymer, polyetheretherketone (PEEK), and mixtures thereof. A semiconductor storage tray, characterized in that it is one or more types selected from the group consisting of. According to claim 6,
A tray for storing semiconductors, wherein the matrix polymer is modified polyphenylene oxide (MPPO) or polyethersulfone (PES). delete According to claim 1,
A tray for storing semiconductors, characterized in that it further contains 0.1 wt% to 2 wt% of a carbon-based conductive material. Compounding a matrix polymer, a phenol-based or sulfur-based antioxidant, and a fluorine-based lubricant at a temperature of 250°C to 350°C to prepare a polymer mixture;
Injecting the polymer mixture into a tray for storing semiconductors; and
Curing the injection molded product in the form of a tray for storing semiconductors;
Including,
Of the total weight of the polymer mixture, the content of the antioxidant is 0.1 wt% to 5 wt%, and the content of the fluorine-based lubricant is 0.1 wt% to 1 wt%.

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