KR102645331B1 - Pixel array panel and digital x-ray detector comprising the same - Google Patents

Abstract

One embodiment of the present invention is an array panel for a digital Gate lines corresponding to horizontal lines; first and second data lines corresponding to both sides of each vertical line composed of pixel areas arranged side by side in the vertical direction among the plurality of pixel areas; and first and second photo-sensing elements corresponding to each pixel area defined by the gate line and the first and second data lines and spaced apart from each other.

Description

Array panel for digital x-ray detection device and digital x-ray detection device including same {PIXEL ARRAY PANEL AND DIGITAL X-RAY DETECTOR COMPRISING THE SAME}

The present invention relates to a digital X-ray detector (DXD) that detects the amount of X-ray (radiation) transmission and an array panel provided therewith.

X-ray (radiation) is an electromagnetic wave that has transparency. The transmission amount of these X-rays corresponds to the density inside the object. Accordingly, X-ray images are widely used in fields such as medicine, security, and industry. In particular, X-ray images are frequently used as a basic diagnostic tool in the medical field.

Existing X-ray images were provided through the process of preparing a film made of photosensitive material, exposing the film to X-rays that passed through the object, and then transferring the image from the film to photographic paper. In this case, there is a problem that image information cannot be provided in real time due to the printing process, and image information is easily lost due to the inability to store and preserve the film for a long time.

Recently, due to the development of image processing technology and semiconductor technology, a digital X-ray detection device with a flat panel structure that can replace film has been proposed.

A typical digital X-ray detection device includes an array panel in the form of a flat plate.

The array panel defines a plurality of pixel areas arranged in a detection area that detects the amount of It includes a switching element disposed between a data line for reading out a signal and a photo-sensing element.

When the switching element is turned on based on the gate signal of the gate line, it transmits the output signal of the photo-sensing signal to the data line. Here, the gate line corresponds to each horizontal line composed of pixel regions arranged side by side in the horizontal direction among the plurality of pixel regions, and the data line corresponds to each horizontal line composed of pixel regions arranged side by side in the vertical direction among the plurality of pixel regions. It is common to correspond to a vertical line.

Additionally, the plurality of pixel areas are generally defined in a rectangular shape by a horizontal gate line and a vertical data line.

However, unlike a plurality of pixel areas, the object is not a combination of squares, so the X-ray image produced by a general digital X-ray detection device has a problem including quantization error. Due to this quantization error, there is a limitation in improving the accuracy and reliability of X-ray images.

The present invention is to provide an array panel capable of reducing quantization error of an X-ray image and a digital X-ray detection device including the same.

The objects of the present invention are not limited to the objects mentioned above, and other objects and advantages of the present invention that are not mentioned can be understood by the following description and will be more clearly understood by the examples of the present invention. Additionally, it will be readily apparent that the objects and advantages of the present invention can be realized by the means and combinations thereof indicated in the patent claims.

One example of the present invention is an array panel for a digital A gate line corresponding to the line; first and second data lines corresponding to both sides of each vertical line composed of pixel areas arranged side by side in the vertical direction among the plurality of pixel areas; and first and second photo-sensing elements corresponding to each pixel area defined by the gate line and the first and second data lines and spaced apart from each other.

The first photo-sensing element has a shape including a first edge in the horizontal direction, a second edge in the vertical direction, and a third edge in an oblique direction that intersects the horizontal direction and the vertical direction. 2 The photo-sensing element is configured to include a fourth edge in the horizontal direction, a fifth edge in the vertical direction, and a sixth edge in the diagonal direction. Here, the third corner and the sixth corner are arranged in a diagonal direction intersecting the horizontal and vertical directions, face each other, and are spaced apart from each other at a predetermined interval.

The array panel for the digital X-ray detection device includes a first switching element disposed between the first photo-sensing element and a first data line; and a second switching element disposed between the second photo-sensing element and the second data line.

At this time, in each pixel area of the ith horizontal line among the plurality of horizontal lines corresponding to the plurality of pixel areas, the first switching element turns on based on the ith gate signal of the ith gate line, The second switching element turns on based on the i+1-th gate signal of the i+1-th gate line.

The first data line is disposed on the horizontal right side of each vertical line, the second data line is disposed on the horizontal left side of each vertical line, and in each pixel area of the ith horizontal line. , the first switching element is disposed adjacent to the intersection area between the i-th gate line and the first data line, and the second switching element is disposed between the i+1-th gate line and the second data line. It is placed adjacent to the intersection area of .

Each of the first and second photo-sensing elements includes a first element electrode disposed on an interlayer insulating film covering the first and second switching elements; a PIN layer disposed on the first device electrode; and a second device electrode disposed on the PIN layer. Here, the first element electrode of the first photo-sensing element and the first element electrode of the second photo-sensing element are spaced apart from each other.

And, the array panel for the digital X-ray detection device includes a first protective film covering the first and second photo-sensing elements; and a bias line disposed on the first protective layer and corresponding to each vertical line. Here, the bias line overlaps at least a portion of each of the first and second data lines arranged between adjacent vertical lines, and first and second protruding areas branch into each pixel area arranged on both sides of the bias line. It includes, wherein the first photo-sensing element is connected to the first protruding area of the bias line through a first bias contact hole penetrating the first protective film, and the second photo-sensing element is connected to the first protective film. It is connected to the second protruding area of the bias line through a second bias contact hole penetrating.

The first data line of the j-th vertical line among the plurality of vertical lines corresponding to the plurality of pixel areas is the second data line of the j+1-th vertical line disposed to the right of the j-th vertical line, and The second data line of the j-th vertical line is adjacent to the first data line of the j-1-th vertical line, which is located to the left of the j-th vertical line.

In addition, the array panel for the digital X-ray detection device includes a second protective film covering the bias line; a planarization film disposed on the second protective film; and a scintillator disposed on the planarization film.

In addition, another example of the present invention provides a digital X-ray detection device including the array panel described above.

An array panel for a digital X-ray detection device according to an embodiment of the present invention includes first and second photo-sensing elements corresponding to each pixel area.

By arranging two photo-sensing elements in each pixel area in this way, the resolution can be doubled without reducing the size of each pixel area. As a result, the quantization error can be reduced, and the accuracy and reliability of the X-ray image can be improved.

Each of the first and second photo-sensing elements corresponding to each pixel area includes a first element electrode, a PIN layer, and a second element electrode.

The first device electrode of the first photo-sensing element has a first edge corresponding to the horizontal gate line, a second edge corresponding to the vertical data line, and a third edge opposing the intersection area of the gate line and the data line. It is made in a form that includes. And, the second element electrode of the second photo-sensing element faces the fourth corner corresponding to the horizontal gate line, the fifth corner corresponding to the vertical data line, and the third corner, and is located at a predetermined distance from the third corner. It has a shape including a sixth edge spaced apart from each other. Here, the third and sixth corners are arranged in a diagonal direction that intersects the horizontal and vertical directions.

That is, the first and second photo-sensing elements have a shape including diagonal edges. Accordingly, the area corresponding to the outline of the object in the X-ray image may be quantized into a triangle or a polygon similar to a triangle rather than a square. Therefore, by further reducing the quantization error, the accuracy and reliability of the X-ray image can be further improved.

1 is a diagram showing an X-ray imaging system according to an embodiment of the present invention.
FIG. 2 is a diagram showing the digital X-ray detection device of FIG. 1 according to an embodiment of the present invention.
FIG. 3 is a diagram showing an example of an equivalent circuit in some of a plurality of pixel areas in the array panel of FIG. 2.
FIG. 4 is a diagram showing an example of a plane of some of a plurality of pixel areas in the array panel of FIG. 2.
Figure 5 is a diagram showing a cross section taken along line AA' of Figure 4.
Figure 6 is a diagram showing a cross section taken along line BB' in Figure 4.
Figures 7 to 18 are examples of the manufacturing process of an array panel according to an embodiment of the present invention, and are diagrams showing a plan view and a cross section through a partial process.

The above-mentioned objects, features, and advantages will be described in detail later with reference to the attached drawings, so that those skilled in the art will be able to easily implement the technical idea of the present invention. In describing the present invention, if it is determined that a detailed description of known technologies related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the attached drawings. In the drawings, identical reference numerals are used to indicate identical or similar components.

Hereinafter, the “top (or bottom)” of a component or the arrangement of any component on the “top (or bottom)” of a component means that any component is placed in contact with the top (or bottom) of the component. Additionally, it may mean that other components may be interposed between the component and any component disposed on (or under) the component.

Additionally, when a component is described as being “connected,” “coupled,” or “connected” to another component, the components may be directly connected or connected to each other, but the other component is “interposed” between each component. It should be understood that “or, each component may be “connected,” “combined,” or “connected” through other components.

Hereinafter, a digital X-ray detection device and an array panel provided therein according to an embodiment of the present invention will be described with reference to the attached drawings.

First, with reference to FIGS. 1 and 2, the X-ray imaging system and the digital X-ray detection device provided therein will be described.

1 is a diagram showing an X-ray imaging system according to an embodiment of the present invention. FIG. 2 is a diagram showing the digital X-ray detection device of FIG. 1 according to an embodiment of the present invention.

As shown in FIG. 1, the X-ray imaging system 10 is intended to provide an X-ray image of the interior of a predetermined target object 20. By way of example, the target object 20 may be a part of a living body subject to inspection or a part of an industrial process output subject to inspection.

This X-ray imaging system 10 includes a digital X-ray detection device 11 that detects the amount of X-ray transmission, and an X-ray ( It includes a light source device 12 that irradiates X-rays.

The digital X-ray detection device 11 includes a flat array panel including a detection area for detecting the amount of X-rays transmitted to the target object 20.

As shown in FIG. 2, the digital X-ray detection device 11 includes an array panel 100.

The array panel 100 includes a plurality of pixel areas (P) arranged in a matrix in the detection area (DA). In addition, the array panel 100 further includes a gate line (GL), a first data line (DL1), a second data line (DL2), and a bias line (BL) connected to a plurality of pixel areas (P).

Exemplarily, the gate line GL may correspond to each horizontal line of the array panel 100. Here, each horizontal line is composed of pixel areas (P) arranged side by side in the horizontal direction (left and right directions in FIG. 2) among the plurality of pixel areas (P).

The first and second data lines DL1 and DL2 may correspond to both sides of each vertical line of the array panel 100. Here, each vertical line is composed of pixel areas (P) arranged side by side in the vertical direction (up and down direction in FIG. 2) among a plurality of pixel areas (P). For example, the first data line DL1 may be placed on the right side of each vertical line, and the second data line DL2 may be placed on the left side of each vertical line.

Here, each pixel area P may be defined in a rectangular shape by a horizontal gate line GL and vertical first and second data lines DL1 and DL2.

Additionally, the bias line BL may correspond to each vertical line of the array panel 100, like the first and second data lines DL1 and DL2. Alternatively, although not shown in FIG. 2, the bias line BL may be formed in a mesh form corresponding to each horizontal direction, or each vertical direction and each horizontal direction.

In addition, the array panel 100 further includes a scintillator (130 in FIGS. 5 and 6) disposed on a side facing the light source device (12 in FIG. 1). That is, the scintillator 130 is disposed between the light source device 12 and the light sensing element (PD1 and PD2 in FIGS. 5 and 6). This scintillator 130 converts X-rays into visible light.

As shown in FIG. 3, the array panel 100 includes first and second photo-sensing elements (PD1, PD2; Photo Diode or PIN Diode) corresponding to each pixel area (P), and a first photo-sensing element (PD1) ) and a first switching device (SD1) disposed between the first data line (DL1), and a second switching device (SD1) disposed between the second photo-sensing device (PD2) and the second data line (DL2). Includes SD2).

Additionally, the array panel 100 may further include a pixel capacitor (Cp) corresponding to each pixel area (P). The pixel capacitor Cp is connected in parallel to each of the first and second photosensing elements PD1 and PD2. This pixel capacitor Cp is charged by the device detection signal of each of the first and second photo-sensing devices PD1 and PD2, and is discharged when the first and second switching devices SD1 and SD2 are turned on.

One end of each of the first and second photo-sensing elements PD1 and PD2 is connected to the bias line BL, and the other end is connected to the first and second switching elements SD1 and SD2. Exemplarily, the first device electrode (i.e., cathode electrode) of the first photosensing device (PD1) is connected to the first switching device (SD1), and the second device electrode (i.e., anode electrode) is connected to the bias line (BL). ) can be connected to. Likewise, the first element electrode (i.e., cathode electrode) of the second photosensing element (PD2) is connected to the second switching element (SD2), and the second element electrode (i.e., anode electrode) is connected to the bias line (BL). can be connected

Each of the first and second photosensing elements PD1 and PD2 of each pixel area P absorbs visible light supplied from the scintillator 130 and generates electrons in response to visible light, thereby increasing the amount of X-ray transmission. Generates a corresponding device detection signal.

The first and second switching elements SD1 and SD2 are connected to different gate lines GL.

That is, any one pixel area ( In P(i, j)), the first switching device SD1 turns on based on the gate signal of the i-th gate line GL(i), and the second switching device SD2 turns on the i+1-th gate line. It turns on based on the gate signal of the gate line (GL(i+1)).

And, when the first switching device (SD1) is turned on based on the gate signal of the ith gate line (GL(i)), the device sensing signal of the first photo-sensing device (PD1) is transmitted to the first data line (DL1). deliver it to This first switching element SD1 is disposed adjacent to the intersection area between the ith gate line GL(i) and the first data line DL1.

Likewise, when the second switching device (SD2) is turned on based on the gate signal of the i+1-th gate line (GL(i+1)), the device detection signal of the second photo-sensing device (PD2) is converted to second data. It is transmitted to line (DL2). This second switching element SD2 is disposed adjacent to the intersection area between the i+1-th gate line GL(i+1) and the second data line DL2.

Accordingly, when the gate signal is supplied to the ith gate line (GL(i)), the first switching element (SD1) of each pixel area (P) of the ith horizontal line and the front end of the ith horizontal line The second switching element (SD2) of each pixel area (P) of the i-1th horizontal line arranged in is turned on.

And, when the gate signal is supplied to the i+1-th gate line (GL(i+1)), the first switching element (SD1) of each pixel area (P) of the i+1-th horizontal line, and the i-th The second switching element (SD2) of each pixel area (P) of the i-th horizontal line disposed in front of the +1-th horizontal line is turned on.

Additionally, as mentioned above, the first and second data lines DL1 and DL2 are disposed on both sides of each vertical line.

Accordingly, the first data line (DL1 ( j)) is disposed adjacent to the second data line DL2(j+1) of the j+1-th vertical line, which is disposed to the right of the j-th vertical line. And, the second data line DL2(j) of the j-th vertical line is connected to the first data line DL1(j-1) of the j-1-th vertical line disposed on the left side of the j-th vertical line. are placed adjacently.

Again, FIG. 2 will be described next.

The digital X-ray detection device 11 includes a readout driver (RD), a gate driver (GD), a bias driver (BD), and a timing controller (TC) that drive the array panel 100. Controller) is further included.

Although not shown in FIG. 2, the gate driver (GD) and bias driver (BD), which are made of relatively simple circuits compared to the readout driver (RD), may be built into the array panel 100.

The timing controller (TC) supplies a start signal (STV) and a clock signal (CPV) to the gate driver (GD) for controlling the driving timing of the gate driver (GD). Additionally, the timing controller TC supplies a readout control signal (ROC) and a readout clock signal (CLK) to the readout driver (RD) for controlling the driving timing of the readout driver (RD).

The gate driver (GD) sequentially supplies gate signals to each gate line (GL) to turn on and drive the switching transistors (ST) of the pixel areas (P) included in each horizontal line.

The bias driver (BD) supplies a predetermined bias signal to the bias line (BL). At this time, the bias driver BD may selectively supply a bias signal for a reverse bias operation or a bias signal for a forward bias operation.

The readout driver (RD) receives the element detection signal of each pixel area (P) through the first and second data lines (DL1 and DL2) and generates an image signal based on the received signal.

For example, the readout driver (RD) amplifies the device detection signal, performs correction to remove noise signals from the amplified device detection signal, converts the corrected device detection signal into a digital signal, and combines the digital signals. A video signal can be generated from. Here, the image signal may be a signal representing luminance values corresponding to a plurality of pixel areas (P) as bit information. Additionally, each pixel of the image signal corresponds not to each pixel area (P) but to the first and second photosensing elements (PD1 and PD2) of each pixel area (P).

Next, an array panel 100 for a digital X-ray detection device according to an embodiment of the present invention will be described with reference to FIGS. 4 to 6.

FIG. 4 is a diagram showing an example of a plane of some of a plurality of pixel areas in the array panel of FIG. 2. FIG. 5 is a diagram showing a cross section taken along line A-A' of FIG. 4. FIG. 6 is a diagram showing a cross section taken along line B-B' of FIG. 4.

As shown in FIG. 4, the array panel 100 has a gate line GL arranged in the horizontal direction (left and right directions in FIG. 4), and first and second data arranged in the vertical direction (up and down directions in FIG. 4). It includes lines DL1 and DL2, a bias line BL, and a plurality of pixel areas P.

Each pixel area P may be defined as an intersection area between the horizontal gate line GL and the vertical first and second data lines DL1 and DL2.

Each pixel area (P) includes first and second photo-sensing elements (PD1, PD2), a first switching element (SD1) between the first photo-sensing element (PD1) and the first data line (DL1), and a second It includes a second switching device (SD2) between the photosensitive device (PD2) and the second data line (DL2).

Each of the first and second photosensing elements PD1 and PD2 includes a first electrode 111, a PIN layer 112, and a second electrode 113.

The first and second photosensing elements PD1 and PD2 corresponding to each pixel area P are disposed in an area where each pixel area P is divided into two and are spaced apart from each other. The first and second photo-sensing elements PD1 and PD2 may be disposed in the same area so that the first and second photo-sensing elements PD1 and PD2 have equal luminous efficiencies.

The first photo-sensing element PD1 includes a horizontal first edge E1, a vertical second edge E2, and a diagonal third edge E3 that intersects the horizontal and vertical directions. It is made in the form

Likewise, the second photo-sensing element PD2 has a shape including a horizontal fourth edge E4, a vertical fifth edge E5, and a diagonal sixth edge E6.

For example, the planar shape of each of the first and second photosensing elements PD1 and PD2 may be triangular. Alternatively, the planar shape of each of the first and second photosensing elements PD1 and PD2 may be a polygon similar to a triangle.

Exemplarily, in the first photo-sensing element PD1 of each pixel area P of the ith horizontal line, the first edge E1 in the horizontal direction is adjacent to the ith gate line GL(i). The second vertical edge E2 is adjacent to the first data line DL1, and the diagonal third edge E3 connects the first and second edges E1 and E2.

And, in the second photosensitive element PD2 among the pixel areas of the ith horizontal line, the fourth edge E4 in the horizontal direction is adjacent to the i+1th gate line GL(i+1). , the vertical fifth edge E5 is adjacent to the second data line DL2, and the diagonal sixth edge E6 connects the fourth and fifth edges E4 and E5.

Each of the first and second switching elements (SD1, SD2) includes an active layer (ACT), a gate electrode (GE in FIG. 5), and first and second transistor electrodes (TE1, TE2; Transistor Electrode).

For example, in the first switching element (SD1) disposed in each pixel area (P) of the ith horizontal line, the active layer (ACT) is a channel overlapping a part of the ith gate line (GL(i)). region, the first transistor electrode (TE1) is made up of a part of the first data line (DL1) and overlaps one side of the channel region of the active layer (ACT), and the second transistor electrode (TE2) is located on the other side of the channel region. It consists of an island pattern that overlaps one side and a portion of the first photosensitive element (PD1). The second transistor electrode (TE2) of the first switching device (SD1) is connected to the first photo-sensing device (PD1) through the pixel contact hole (PD). And, in each pixel area (P) of the ith horizontal line, the gate electrode (GE) of the first switching element (SD1) overlaps the active layer (ACT) of the ith gate line (GL(i)). It is made up of some parts.

And, in the second switching element (SD2) disposed in each pixel area (P) of the ith horizontal line, the active layer (ACT) is located in a part of the i+1-th gate line (GL(i+1)). It includes an overlapping channel area, the first transistor electrode (TE1) is made up of a part of the second data line (DL2) and overlaps one side of the channel area in the active layer (ACT), and the second transistor electrode (TE2) is a channel It consists of an island pattern that overlaps the other side of the area and a portion of the second photosensitive element (PD2). The second transistor electrode (TE2) of the second switching device (SD2) is connected to the second photosensing device (PD2) through the pixel contact hole (PD). And, in each pixel area (P) of the i-th horizontal line, the gate electrode (GE) of the second switching element (SD2) is connected to the active layer (ACT) of the i+1-th gate line (GL(i+1)). ) and overlapping parts.

The gate line GL corresponds to each horizontal line composed of pixel areas arranged in the horizontal direction among the plurality of pixel areas P.

The first and second data lines DL1 and DL2 correspond to each vertical line composed of pixel areas arranged in the vertical direction among the plurality of pixel areas P.

Like the first and second data lines DL1 and DL2, the bias line BL may correspond to each vertical line. In this case, the bias line BL overlaps at least a portion of each of the adjacent first and second data lines DL1 and DL2. Additionally, the bias line BL may include first and second protrusion regions BP1 and BP2 (Bias Protrusion) that branch into each pixel region P disposed on both sides of the bias line BL.

Here, the first photo-sensing element PD1 is connected to the first protruding area BP1 of the bias line BL through the first bias contact hole BH1.

And, the second photo-sensing element PD2 is connected to the second protruding area BP2 of the bias line BL through the second bias contact hole BH2.

For example, the first data line (DL1(j-1)) of the j-1th vertical line and the second data line (DL2(j)) of the j-th vertical line are adjacent to each other, and the j-th vertical line It is placed on the left side of.

The j-1th bias line (BL(j-1)) corresponding to the j-1th vertical line is connected to the first data line (DL1(j-1)) of the j-1th vertical line and the j-th It overlaps with at least a portion of each of the second data lines DL2(j) of the vertical lines. In addition, the j-1th bias line (BL(j-1)) is a first light sensing element (PD1) branching toward the first photosensing element (PD1) of each pixel area (P) of the j-1th vertical line disposed on its left side. It includes a first protruding area BP1 and a second protruding area BP2 branching toward the second photo-sensing element PD2 of each pixel area P of the j-th vertical line disposed on the right side thereof.

Accordingly, the second photo-sensing element PD2 of each pixel area P of the j-th vertical line is connected to the j-1-th bias line ( Connected to BL(j-1)).

And, the first data line (DL1(j)) of the j-th vertical line and the second data line (DL2(j+1)) of the j+1-th vertical line are adjacent to each other, and the j-1-th vertical line It is placed between the line and the j-th vertical line.

The j-th bias line (BL(j)) corresponding to the j-th vertical line is the first data line (DL1(j)) of the j-th vertical line and the second data line (DL1(j)) of the j+1-th vertical line. DL2(j+1)) overlaps with at least part of each. In addition, the j-th bias line (BL(j)) has a first protruding area (BP1) branching toward the first photo-sensing element (PD1) of each pixel area (P) of the j-th vertical line disposed on its left side. and a second protruding area (BP2) branching toward the second photo-sensing element (PD2) of each pixel area (P) of the j+1-th vertical line disposed on the right side thereof.

Accordingly, the first photo-sensing element PD1 of each pixel area P of the j-th vertical line is connected to the j-th bias line BL( It is connected to j)).

As shown in FIG. 5, the array panel 100 includes first and second switching elements (SD1, SD2) disposed on the substrate 101, and covering the first and second switching elements (SD1, SD2). It includes first and second photo-sensing elements PD1 and PD2 disposed on the interlayer insulating film 104. In addition, the array panel 100 includes a first protective film 121 covering the first and second photosensitive elements PD1 and PD2, a second protective film 122 on the first protective film 121, and a second protective film 122. It further includes a planarization film 123 and a scintillator 130 disposed on the planarization film 123.

The first switching element SD1 includes an active layer ACT disposed on the substrate 101, a gate electrode GE disposed on the gate insulating layer 102 covering at least a portion of the active layer ACT, and an active layer ACT. It includes first and second transistor electrodes TE1 and TE2 disposed on the source-drain insulating film 103 covering the layer ACT and the gate electrode GE.

The active layer (ACT) may be made of any one of an amorphous silicon material, a low temperature polycrystaline silicon (LTPS) material, and an oxide semiconductor material. The active layer ACT includes a channel region overlapping the gate electrode GE, and first and second regions disposed on both sides of the channel region.

The gate electrode (GE) overlaps the channel area of the active layer (ACT) with the gate insulating layer 102 interposed therebetween. Here, the gate insulating layer 102 may be made of an inorganic insulating material such as SiNx, SiO, etc.

And, as previously shown in FIG. 4, since the gate electrode GE is formed as a part of the gate line GL, the gate line GL may also be disposed on the gate insulating layer 102.

The first transistor electrode TE1 is connected to the first region disposed on one side of the channel region of the active layer ACT through the first active contact hole AH1 penetrating the source and drain insulating film 103.

As previously shown in FIG. 4, the first transistor electrode TE1 is formed as a portion of the first data line DL1 branched toward the pixel area P and overlapping with the first area of the active layer ACT.

The second transistor electrode TE2 is connected to the second region of the active layer ACT disposed on the other side of the channel region through the second active contact hole AH2 penetrating the source-drain insulating film 103.

As previously shown in FIG. 4, the second transistor electrode TE2 is formed in an island pattern that overlaps the second region of the active layer ACT and a portion of the first photosensitive element PD1.

In addition, the second switching device (SD2) has a first transistor electrode (TE1) formed as a part of the second data line (DL2), and the second transistor electrode (TE2) overlaps a part of the second photosensing device (PD2). Except for this point, since it has the same structure as the first switching element SD1, redundant description will be omitted below.

As shown in FIG. 6, the first photo-sensing device PD1 includes a first device electrode 111 disposed on the interlayer insulating film 104, and a PIN layer 112 disposed on the first device electrode 111. and a second device electrode 113 disposed on the PIN layer 112.

The first device electrode 111 may be placed in as wide an area as possible among the areas in which each pixel area P is divided into two, considering the fill factor of each pixel area P. Illustratively, the first electrode 111 is a single layer made of an opaque metal such as molybdenum (Mo) or a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), and ZnO (Zinc Oxide). It may be a multi-layer structure.

The PIN layer 112 is sequentially composed of an N (Negative)-type semiconductor layer containing N-type impurities, an I (Intrinsic)-type semiconductor layer containing no impurities, and a P (Positive)-type semiconductor layer containing P-type impurities. It may be comprised of a layered structure. Here, the I-type semiconductor layer may be formed to be relatively thicker than the N-type semiconductor layer and the P-type semiconductor layer. By way of example, the PIN layer 112 may have a thickness of approximately 1 μm.

The PIN layer 112 contains a material that can convert X-rays emitted from the light source device (12 in FIG. 1) into electrical signals. For example, the PIN layer 112 may include at least one of a-Se, HgI ₂ , CdTe, PbO, PbI ₂ , BiI ₃ , GaAs, and Ge.

The second device electrode 113 covers most of the PIN layer 112. The second device electrode 113 is made of a transparent conductive material to prevent a decrease in the amount of light incident on the PIN layer 112 and a decrease in the fill factor of each pixel region (P). Illustratively, the second device electrode 123 may be made of any one of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and Zinc Oxide (ZnO).

This photo-sensing device (PD) is covered with a first protective film 121. Here, the first protective film 121 covers the second device electrode 113 and is entirely disposed on the interlayer insulating film 104. Exemplarily, the first protective film 121 may be made of an inorganic insulating material such as SiNx, SiO, etc.

Since the second photo-sensing device PD2 has the same structure as the first photo-sensing device PD1, redundant description will be omitted below.

The array panel 100 further includes a bias line BL disposed on the first protective film 121 .

The bias line BL may be formed of a stacked structure of first and second bias layers BLa and BLb.

As an example, the first bias layer BLa is disposed on the first protective film 121 and may be made of an opaque conductive material such as Cu, Mg, Ag, Al, etc.

The first bias layer (BLa) is disposed between vertical lines. Accordingly, the first bias layer BLa overlaps at least a portion of each of the first and second data lines DL1 and DL2 disposed adjacent to each other between vertical lines.

The second bias layer BLb includes a first protruding region BP1 overlapping a portion of the first photo-sensing device PD1 and a second protruding region overlapping a portion of the second photo-sensing device PD2. This second bias layer (BLb) is made of indium tin oxide (ITO), indium zinc oxide (IZO), and It may be made of a transparent conductive material such as ZnO (Zinc Oxide).

The first protruding area BP1 of the second bias layer BLb is connected to the second device electrode 113 of the first photo-sensing device PD1 through the first bias contact hole BP1 penetrating the first protective film 121. ) is connected to.

The second protruding area BP2 of the second bias layer BLb is connected to the second device electrode 113 of the second photosensing device PD2 through the second bias contact hole BP2 penetrating the first protective film 121. ) is connected to.

In Figure 6, the second bias layer (BLb) is shown to be disposed on the first bias layer (BLa), but this is only an example, and the first bias layer (BLa) is disposed on the second bias layer (BLb). It could be.

This bias line BL is covered with a second protective film 122. The second protective film 122 is entirely disposed on the first protective film 121.

Here, each of the first and second protective films 121 and 122 may be made of an inorganic insulating material such as SiNx or SiO.

In the spaced area between the first and second photosensing elements PD1 and PD2 corresponding to each pixel area P, the first protective film 121 and the second protective film 122 may contact each other.

The planarization film 123 on the second protective film 122 may be made of an organic insulating material such as an acrylic resin such as photo acryl (PAC) or a photo resist (PR).

The scintillator 130 converts X-rays into visible light. This scintillator 130 may have a columnar structure. By way of example, the scintillator 130 may be made of CsI:Tl (Cesium iodide: Talluim doped).

As described above, according to an embodiment of the present invention, by arranging the first and second photosensing elements PD1 and PD2 in the area where each pixel area P is divided into two, the size of each pixel area P is changed. Even without reducing the resolution, the resolution of the X-ray image can be doubled. Accordingly, the quantization error can be reduced, so the accuracy and reliability of the X-ray image can be improved.

The first and second photo-sensing elements PD1 and PD2 are formed of a triangle or a polygon similar to a triangle including diagonal third and sixth corners E3 and E6. Accordingly, the outer part of the object, which can be displayed as a curve or diagonal line, is more likely to match the first and second photo-sensing elements PD1 and PD2, and thus the quantization error can be further reduced. Accordingly, the accuracy and reliability of X-ray images can be further improved.

Meanwhile, in FIG. 4, the third and sixth corners E3 and E6 are shown in a diagonal direction extending from the upper left to the lower right, but the embodiment of the present invention is not limited thereto. That is, the third and sixth corners E3 and E6 may be in a diagonal direction extending from the upper right to the lower left. Alternatively, the diagonal directions of the third and sixth corners E3 and E6 may not be the same in the entire pixel area P and may be different for each pixel area P. For example, in the pixel areas P placed in some of the detection areas DA, the third and sixth corners E3 and E6 are in a diagonal direction extending from the upper left to the lower right, and the pixel areas P placed in other parts of the detection area DA are diagonal. The third and sixth corners E3 and E6 in (P) may be in a diagonal direction extending from the upper right to the lower left. As another example, in the left and right areas derived by dividing the detection area (DA) into two horizontal directions, the third and sixth corners (E3, E6) of the pixel areas (P) of the left area are located in the upper right corner. It may be in a diagonal direction extending from the upper left to the lower right, and the third and sixth corners E3 and E6 of the pixel areas P in the right area may be in a diagonal direction extending from the upper left to the lower right. In this way, the diagonal direction of the third and sixth corners E3 and E6 of each pixel area P may be selected depending on the object in the X-ray image.

Next, with reference to FIGS. 7 to 18 , the manufacturing process of the array panel 100 according to an embodiment of the present invention will be described.

Figures 7 to 18 are examples of the manufacturing process of an array panel according to an embodiment of the present invention, and are diagrams showing a plan view and a cross section through a partial process.

The arrangement method or formation method of each component described below is a technique performed by a person skilled in the art, such as deposition, photoresist coating (PR coating), exposure, development, and etching ( Since a photolithography process including etching and photoresist stripping (PR Strip) is used, a detailed description thereof will be omitted. For example, in the case of deposition, sputtering can be used for metal materials, and plasma enhanced vapor deposition (PECVD) can be used for semiconductors or insulating films. In the case of etching, dry method can be used depending on the material. Etching and wet etching can be selected and used, and techniques practiced by a person skilled in the art can be applied.

As shown in FIGS. 7 and 8, a substrate 101 is prepared, and two active layers (ACT) corresponding to each pixel area (P) are disposed on the substrate 101. Then, the insulating film and conductive film covering the active layer (ACT) are patterned to form a gate insulating film 102 and a gate line (GL) on the substrate 101 .

Here, the gate line GL overlaps at least a portion of the active layer ACT and is arranged in the horizontal direction. Additionally, the gate insulating film 102 may be formed in the same pattern as the gate line GL.

A portion of the active layer (ACT) that overlaps the gate line (GL) is a channel region that generates a channel for moving charges based on the gate signal of the gate line (GL). Also, a portion of the gate line GL that overlaps the active layer ACT becomes the gate electrode GE of the switching elements SD1 and SD2.

As shown in FIGS. 9 and 10, the source and drain insulating film 103 covering the active layer (ACT), gate line (GL), and gate electrode (GE) is entirely disposed on the substrate 101. Next, the source-drain insulating film 103 is patterned to expose first and second active contact holes AH1 and AH2 that expose at least a portion of each of the first and second regions disposed on both sides of the channel region in the active layer ACT. ) is prepared. Thereafter, the conductive film on the source and drain insulating film 103 is patterned, so that the first and second transistor electrodes (TE1 and TE2) and the data line (DL) are disposed on the source and drain insulating film 103.

The data line DL is arranged in a vertical direction, and the first transistor electrode TE1 is formed of a portion of the data line DL that overlaps the first region of the active layer ACT. The first transistor electrode TE1 is connected to the first region of the active layer ACT through the first active contact hole AH1.

The second transistor electrode TE2 has an island pattern that overlaps the second region of the active layer ACT. The second transistor electrode TE2 is connected to the second region of the active layer ACT through the second active contact hole AH2.

As a result, the first and second switching elements SD1 and SD2 of each pixel area P are provided.

As shown in FIGS. 11 and 12 , an interlayer insulating film 104 covering the first and second transistor electrodes TE1 and TE2 and the data line DL is entirely disposed on the source and drain insulating film 103. Then, the interlayer insulating film 104 is patterned to provide a pixel contact hole (PH) exposing a portion of the second transistor electrode (TE2). Next, the conductive film on the interlayer insulating film 104 is patterned, and the first device electrode 111 of each of the first and second photo-sensing pixels PD1 and PD2 is disposed on the interlayer insulating film 104.

The first device electrode 111 is connected to the second transistor electrode TE2 through the pixel contact hole PH.

As shown in FIGS. 13 and 14, a PIN layer 122 is disposed on each first device electrode 111, and a second electrode 123 is disposed on each PIN layer 122.

As a result, the first and second photosensing elements PD1 and PD2 are prepared.

As shown in Figures 15 and 16, the first protective film 121 covering the second electrode 123 is entirely disposed on the interlayer insulating film 104. And, by patterning the first protective film 121, first and second bias contact holes (BH1, BH2) exposing a portion of the second electrode 123 of the first and second photosensing elements (PD1, PD2). This is prepared. Then, the conductive film made of an opaque conductive material on the first protective film 121 is patterned to form a vertical first bias layer (BLa) on the first protective film 121 .

The first bias layer BLa overlaps at least a portion of each of the first and second data lines DL1 and DL2 disposed adjacent to each other between vertical lines.

As shown in FIGS. 17 and 18, a conductive film made of a transparent conductive material is patterned to cover the first bias layer (BLa) to form a second bias layer (BP1) including first and second protruding regions (BP1, BP2). BLb) is disposed on the first protective film 121.

As a result, a bias line BL composed of a stacked structure of the first and second bias layers BLa and BLb is provided.

Here, the second electrode 113 of the first photo-sensing device PD1 is connected to the bias line BL through the first bias contact hole BH1 and the first protruding area BP1.

And, the second electrode 113 of the second photo-sensing device PD2 is connected to the bias line BL through the second bias contact hole BH2 and the second protruding area BP2.

Subsequently, the second protective film 122 covering the bias line BL is entirely disposed on the first protective film 121. Then, the planarization film 123 is prepared by applying an organic insulating material on the second protective film 122.

Next, the scintillator 130 is placed on the third planarization film 116.

As a result, the array panel 100 according to an embodiment of the present invention is prepared.

As described above, the present invention has been described with reference to the illustrative drawings, but the present invention is not limited to the embodiments and drawings disclosed in this specification, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. It is obvious that transformation can occur. In addition, although the operational effects according to the configuration of the present invention were not explicitly described and explained while explaining the embodiments of the present invention above, it is natural that the predictable effects due to the configuration should also be recognized.

10: X-ray imaging system 20: Object
11: Digital X-ray detection device 12: Light source device
100: Array panel RD: Leadout driving unit
GD: Gate driving part BD: Bias driving part
TC: Timing Controller
DL1, DL2: first and second data lines
GL: Gate line BL: Bias line
P: Pixel area
PD1, PD2: first and second light sensing elements
SD1, SD2: first and second switching elements
ACT: active layer GE: gate electrode
TE1, TE2: first and second transistor electrodes
PH: Pixel contact hole
BP1, BP2: first and second protruding regions
BH1, BH2: first and second bias contact holes
101: substrate 102: gate insulating layer
103: Source-drain insulating layer 104: Interlayer insulating film
AH1, AH2: first and second active contact holes
111: first device electrode 112: PIN layer
113: second device electrode 121: first protective film
122: second protective film 123: flattening film
130: scintillator

Claims (12)

In the array panel for a digital X-ray detection device including a plurality of pixel areas defined in a predetermined detection area,
A gate line corresponding to each horizontal line composed of pixel areas arranged side by side in the horizontal direction among the plurality of pixel areas;
first and second data lines corresponding to both sides of each vertical line composed of pixel areas arranged side by side in the vertical direction among the plurality of pixel areas; and
Comprising first and second photo-sensing elements corresponding to each pixel area defined by the gate line and the first and second data lines and spaced apart from each other,
The first photo-sensing element has a shape including a first edge in the horizontal direction, a second edge in the vertical direction, and a third edge in an oblique direction that intersects the horizontal direction and the vertical direction,
The second photo-sensing element is configured to include a fourth corner in the horizontal direction, a fifth corner in the vertical direction, and a sixth corner in the diagonal direction.
delete According to claim 1,
The third edge and the sixth edge are disposed in a diagonal direction intersecting the horizontal and vertical directions, face each other, and are spaced apart from each other at a predetermined interval.
According to claim 1,
a first switching element disposed between the first photo-sensing element and a first data line; and
An array panel for a digital X-ray detection device further comprising a second switching element disposed between the second photo-sensing element and the second data line.
According to claim 4,
In each pixel area of the ith horizontal line among the plurality of horizontal lines corresponding to the plurality of pixel areas,
The first switching element turns on based on the i-th gate signal of the ith gate line,
An array panel for a digital X-ray detection device wherein the second switching element turns on based on the i+1-th gate signal of the i+1-th gate line.
According to claim 5,
The first data line is disposed on the horizontal right side of each vertical line,
The second data line is disposed on the horizontal left side of each vertical line,
In each pixel area of the ith horizontal line,
The first switching element is disposed adjacent to the intersection area between the ith gate line and the first data line,
The second switching element is an array panel for a digital
According to claim 4,
Each of the first and second switching elements is
An active layer disposed on a substrate;
a gate electrode disposed on a gate insulating layer covering at least a channel region of the active layer;
a source electrode disposed on a source and drain insulating film covering the active layer and the gate electrode and connected to a source region of the active layer disposed on one side of the channel region through a source contact hole penetrating the source and drain insulating film; and
An array for a digital panel.
According to claim 4,
Each of the first and second photosensing elements is
a first device electrode disposed on the interlayer insulating film covering the first and second switching devices;
a PIN layer disposed on the first device electrode; and
It includes a second device electrode disposed on the PIN layer,
An array panel for a digital X-ray detection device wherein the first element electrode of the first photo-sensing element and the first element electrode of the second photo-sensing element are spaced apart from each other.
According to claim 1,
a first protective film covering the first and second photo-sensing elements; and
disposed on the first protective film and further comprising a bias line corresponding to each vertical line,
The bias line overlaps at least a portion of each of the first and second data lines disposed between adjacent vertical lines, and includes first and second protruding regions branching into each pixel region disposed on both sides of the bias line. And
The first photo-sensing element is connected to the first protruding area of the bias line through a first bias contact hole penetrating the first protective film,
The second photo-sensing element is connected to the second protruding area of the bias line through a second bias contact hole penetrating the first protective film.
According to clause 9,
The first data line of the j-th vertical line among the plurality of vertical lines corresponding to the plurality of pixel areas is the second data line of the j+1-th vertical line disposed to the right of the j-th vertical line, and placed adjacently,
The second data line of the j-th vertical line is disposed adjacent to the first data line of the j-1-th vertical line disposed to the left of the j-th vertical line.
According to clause 9,
a second protective film covering the bias line;
a planarization film disposed on the second protective film; and
An array panel for a digital X-ray detection device further comprising a scintillator disposed on the planarization film.
A digital X-ray detection device comprising an array panel for a digital X-ray detection device according to any one of claims 1, 3 to 11.

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